Photocontrollable ambipolar transistors with π-conjugated diarylethene photochromic channels
Formation mechanism of sidewall striation in high-aspect-ratio hole etching
Observation of room temperature electronic localization through a single graphene layer on sapphire
Spin–orbit assisted spin funnels in DC transport through a physically defined pMOS double quantum dot
Characterization of dielectric barrier discharges with water in correlation to productions of OH and H2O2 in gas and liquid phases
High mobility (>30 cm2 V−1 s−1) and low source/drain parasitic resistance In–Zn–O BEOL transistor with ultralow <10−20 A µm−1 off-state leakage current
A ring oscillator consisting of pentacene thin-film transistors with controlled threshold voltages
Low temperature epitaxial growth of Ge:B and Ge0.99Sn0.01:B source/drain for Ge pMOS devices: in-situ and conformal B-doping, selectivity towards oxide and nitride with no need for any post-epi activation treatment
Control of molecular orientation in a single-molecule junction with a tripodal triptycene anchoring unit: toward a simple and facile single-molecule diode
Current and magnetic field dependences of a superconducting coplanar waveguide resonator
An acceleration search method of higher Tc superconductors by a machine learning algorithm
Nonequilibrium skyrmion accumulation induced by direct current in Ir/Co/Pt heterostructure
High carrier density, electrostatic doping in organic single crystal semiconductors using electret polymers
Indication of current-injection lasing from an organic semiconductor
Electric-field control of fluorescence protein emissions at the metal-solution interface
Determination of g-factor in InAs two-dimensional electron system by capacitance spectroscopy
Quantification of the quantum efficiency of radiation of a freestanding GaN crystal placed outside an integrating sphere
Vector focusing through highly scattering media via binary amplitude modulation
Fin-channel orientation dependence of forward conduction in kV-class Ga2O3 trench Schottky barrier diodes
Implantation-and etching-free high voltage vertical GaN p–n diodes terminated by plasma-hydrogenated p-GaN: revealing the role of thermal annealing
CoFeB/MgO-based magnetic tunnel junction directly formed on a flexible substrate
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