Ultrahigh dielectric constant induced by the interfacial polarization between liquid crystal droplets and polymer matrix
Anti-aliasing method for ultrasonic 2D phase-sensitive motion estimator
Electronic properties and primary dissociation channels of fluoromethane compounds
Coulomb-limited mobility in 4H-SiC MOS inversion layer as a function of inversion-carrier average distance from MOS interface
High-frequency ultrasonic backscatter coefficient analysis considering microscopic acoustic and histopathological properties of lymphedema dermis
Impact of defects in self-assembled monolayer on humidity sensing by molecular functionalized transistors
Quantification method of stress depth distribution by micro-Raman spectroscopy for thin film nanomechanical resonator
High rate synthesis of graphene-encapsulated silicon nanoparticles using pulse-modulated induction thermal plasmas with intermittent feedstock feeding
2.5D integration using inductive-coupling TSV-less miniature interposer achieving 317 Gb/s/mm2, 1.2 pJ/b data-transfer
Low-temperature (150 °C) processed metal-semiconductor field-effect transistor with a hydrogenated In–Ga–Zn–O stacked channel
The optimization of surface plasmon coupling efficiency in InGaN/GaN nanowire based nanolasers
High-speed multi-beam X-ray imaging using a lens coupling detector system
Asymmetric carrier penetration into hexagonal boron nitride in graphene field-effect transistors
Influence of interlayer stacking arrangements on carrier accumulation in bilayer graphene field effect transistors
Guiding of dynamic skyrmions using chiral magnetic domain wall
Room-temperature continuous-wave operation of green vertical-cavity surface-emitting lasers with a curved mirror fabricated on {20−21} semi-polar GaN
Heat flux sensing by anomalous Nernst effect in Fe–Al thin films on a flexible substrate
Fabrication of folded bilayer-bilayer graphene/hexagonal boron nitride superlattices
Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire
AlN nanostructures and flat, void-less AlN templates formed by hydride vapor phase epitaxy on patterned sapphire substrates
All InN/InGaN solid-state potentiometric chloride sensor with super Nernstian sensitivity
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