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Journals·Publications

Monthly Journal

Vol.89 No.9

Sep. 2020

OYO BUTURI

• Room temperature bonding / Scanning Transmission X-ray Microscopy / Microscopy of solid interface ionics / Photoelectron holography / Three dimensional imaging of defects in a semiconductor bulk single crystal / operando X-ray nanospectroscopyOyo Buturi Editorial Committee
• Surface activated bonding at room temperature and its bonding mechanismTadatomo SUGA
• Scanning transmission X-ray microscopyYasuo TAKEICHI
• Advanced electron microscopy toward constructing a scientific principle of solid-state interface ionicsKazuo YAMAMOTO and Yuki NOMURA
• Visualization of the three-dimensional atomic arrangement of dopants in semiconductors by photoelectron holographyTomohiro MATSUSHITA
• Nondestructive three-dimensional characterization of GaN using multiphoton-excitation photoluminescence mappingTomoyuki TANIKAWA
• Surface and interface properties of 2D devices revealed by operando X-ray nanospectroscopyHirokazu FUKIDOME
• Outline of edge computing that supports cyber physical systemYoshimitsu OKAYAMA

International Journal

Number 9,

1 September 2020

JJAP :International Journal

• Effect of chemical interaction at modification layer/substrate interface on molecular orientation of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene thin filmsKazuaki Iwasawa and Koji K. Okudaira
• Impact of circuit metallization on dielectric permittivity measurement by scanning microwave microscopyRyo Sakamaki et al
• Ultrahigh dielectric constant induced by the interfacial polarization between liquid crystal droplets and polymer matrixYuhan Hu and Ken Ishikawa
• Anti-aliasing method for ultrasonic 2D phase-sensitive motion estimatorMichiya Mozumi et al
• Electronic properties and primary dissociation channels of fluoromethane compoundsToshio Hayashi et al
• Coulomb-limited mobility in 4H-SiC MOS inversion layer as a function of inversion-carrier average distance from MOS interfaceMunetaka Noguchi et al
• High-frequency ultrasonic backscatter coefficient analysis considering microscopic acoustic and histopathological properties of lymphedema dermisMasaaki Omura et al
• Impact of defects in self-assembled monolayer on humidity sensing by molecular functionalized transistorsTakahisa Tanaka et al
• Quantification method of stress depth distribution by micro-Raman spectroscopy for thin film nanomechanical resonatorMasaki Saito et al
• High rate synthesis of graphene-encapsulated silicon nanoparticles using pulse-modulated induction thermal plasmas with intermittent feedstock feedingYasunori Tanaka et al

Letters Journal

Number 9,

1 September 2020

APEX :Letters Journal

• Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source methodNorihiro Hoshino et al
• Magnetic tunnel junctions with metastable bcc Co₃Mn electrodesKazuma Kunimatsu et al
• Nano-height cylindrical waveguide in GaN-based vertical-cavity surface-emitting lasersMasaru Kuramoto et al
• Diffusion of F atoms from fluoride substrates promotes the epitaxial growth of metal fluoridesXin Dai et al
• The optimization of surface plasmon coupling efficiency in InGaN/GaN nanowire based nanolasersDi Jiang et al
• High-speed multi-beam X-ray imaging using a lens coupling detector systemTetsuroh Shirasawa et al
• Asymmetric carrier penetration into hexagonal boron nitride in graphene field-effect transistorsSusumu Okada et al
• Influence of interlayer stacking arrangements on carrier accumulation in bilayer graphene field effect transistorsYanlin Gao et al
• Guiding of dynamic skyrmions using chiral magnetic domain wallMoojune Song et al
• Room-temperature continuous-wave operation of green vertical-cavity surface-emitting lasers with a curved mirror fabricated on {20−21} semi-polar GaNTatsushi Hamaguchi et al
• Heat flux sensing by anomalous Nernst effect in Fe–Al thin films on a flexible substrateWeinan Zhou and Yuya Sakuraba
• Fabrication of folded bilayer-bilayer graphene/hexagonal boron nitride superlatticesTakuya Iwasaki et al
• Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al_0.6Ga_0.4N/AlN/sapphireKosuke Sato et al
• AlN nanostructures and flat, void-less AlN templates formed by hydride vapor phase epitaxy on patterned sapphire substratesHajime Fujikura et al
• All InN/InGaN solid-state potentiometric chloride sensor with super Nernstian sensitivityLingyun Xie et al

International Meetings

Find More Meetings

• September 23-25, 2020Sep.232020/9/232020/9/25SISPAD20202020 International Conference on Simulation of Semiconductor Processes and Devices
• September 27-30, 2020Sep.272020/9/272020/9/30SSDM2020The 2020 International Conference on Solid State Devices and Materials
• October 5-9, 2020Oct.52020/10/52020/10/9IITC 20202020 IEEE International Interconnect Technology Conference
• October 7-9, 2020Oct.72020/10/72020/10/9NNT2020The 19th International Conference on Nanoimprint and Nanoprint Technology
• November 9-12, 2020Nov.92020/11/92020/11/12MNC202033rd International Microprocesses and Nanotechnology Conference
• Nov. 19-20, 2020Nov.192020/11/192020/11/20[Postponed] DPS202042nd International Symposium on Dry Process
• Nov. 29 - Dec. 2, 2020Nov.292020/11/292020/12/2ISOM’20International Symposium on Imaging, Sensing, and Optical Memory 2020
• July 6-9, 2021Jul.62021/7/62021/7/9IITC 20212021 IEEE International Interconnect Technology Conference
• August 17-24, 2022Aug.172022/8/172022/8/24LT2929th International Conference on Low Temperature Physics

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