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Journals·Publications

Monthly Journal

Vol.89 No.11

Nov. 2020

OYO BUTURI

• Quantum simulation / Biogas sensing technology / Helium ion microscopy / Si MEMS / Compound thin-film solar cells / Standardization / MARLOWEOyo Buturi Editorial Committee
• Quantum simulation using trapped ionsKenji TOYODA
• Biofluorometric gas sensors and imaging systems for human volatilesKohji MITSUBAYASHI
• Helium ion microscopy for low damage characterization and sub-10 nm nano-fabricationShinichi OGAWA
• Silicon based plasmonic MEMS device for light control and detectionShun YASUNAGA, Gaku FURUSAWA, Masaaki OSHITA, and Tetsuo KAN
• High efficiency chalcopyrite compound thin-film solar cells: Crystal growth and device applicationHiroki SUGIMOTO, Motoshi NAKAMURA, Yoshiaki HIRAI, and Takuya KATO
• Doping control in a cadmium telluride photovoltaic deviceAkira NAGAOKA
• Non-volatile memory technology for IoTHisashi SHIMA
• Study around the worldMana TOMA

International Journal

Number 12,

1 December 2020

JJAP :International Journal

• [Comprehensive Review]
  Recent advances and future prospects in energy harvesting technologiesPublished 23 Oct 2020
• Liquid helium-free high-T_c superconducting terahertz emission system and its applicationsYoshihiko Saiwai et al
• Effect of chemical interaction at modification layer/substrate interface on molecular orientation of dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene thin filmsKazuaki Iwasawa and Koji K. Okudaira
• Impact of circuit metallization on dielectric permittivity measurement by scanning microwave microscopyRyo Sakamaki et al
• Ultrahigh dielectric constant induced by the interfacial polarization between liquid crystal droplets and polymer matrixYuhan Hu and Ken Ishikawa
• Anti-aliasing method for ultrasonic 2D phase-sensitive motion estimatorMichiya Mozumi et al
• Electronic properties and primary dissociation channels of fluoromethane compoundsToshio Hayashi et al
• Coulomb-limited mobility in 4H-SiC MOS inversion layer as a function of inversion-carrier average distance from MOS interfaceMunetaka Noguchi et al
• High-frequency ultrasonic backscatter coefficient analysis considering microscopic acoustic and histopathological properties of lymphedema dermisMasaaki Omura et al
• Impact of defects in self-assembled monolayer on humidity sensing by molecular functionalized transistorsTakahisa Tanaka et al
• Quantification method of stress depth distribution by micro-Raman spectroscopy for thin film nanomechanical resonatorMasaki Saito et al
• High rate synthesis of graphene-encapsulated silicon nanoparticles using pulse-modulated induction thermal plasmas with intermittent feedstock feedingYasunori Tanaka et al

Letters Journal

Number 12,

1 December 2020

APEX :Letters Journal

• [APEX Review]
  Defect engineering in SiC technology for high-voltage power devicesPublished 26 Nov 2020
• Chirality-induced effective magnetic field in a phthalocyanine moleculeShinji Miwa et al
• Room-temperature continuous-wave operations of GaN-based vertical-cavity surface-emitting lasers with buried GaInN tunnel junctionsKazuki Kiyohara et al
• Record high extraction efficiency of free electron laser oscillatorHeishun Zen et al
• Temperature dependence of internal quantum efficiency of radiation for the near-band-edge emission of GaN crystals quantified by omnidirectional photoluminescence spectroscopyKazunobu Kojima et al
• Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source methodNorihiro Hoshino et al
• Magnetic tunnel junctions with metastable bcc Co₃Mn electrodesKazuma Kunimatsu et al
• Nano-height cylindrical waveguide in GaN-based vertical-cavity surface-emitting lasersMasaru Kuramoto et al
• Diffusion of F atoms from fluoride substrates promotes the epitaxial growth of metal fluoridesXin Dai et al
• The optimization of surface plasmon coupling efficiency in InGaN/GaN nanowire based nanolasersDi Jiang et al
• High-speed multi-beam X-ray imaging using a lens coupling detector systemTetsuroh Shirasawa et al
• Asymmetric carrier penetration into hexagonal boron nitride in graphene field-effect transistorsSusumu Okada et al
• Influence of interlayer stacking arrangements on carrier accumulation in bilayer graphene field effect transistorsYanlin Gao et al
• Guiding of dynamic skyrmions using chiral magnetic domain wallMoojune Song et al
• Room-temperature continuous-wave operation of green vertical-cavity surface-emitting lasers with a curved mirror fabricated on {20−21} semi-polar GaNTatsushi Hamaguchi et al
• Heat flux sensing by anomalous Nernst effect in Fe–Al thin films on a flexible substrateWeinan Zhou and Yuya Sakuraba
• Fabrication of folded bilayer-bilayer graphene/hexagonal boron nitride superlatticesTakuya Iwasaki et al
• Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al_0.6Ga_0.4N/AlN/sapphireKosuke Sato et al
• AlN nanostructures and flat, void-less AlN templates formed by hydride vapor phase epitaxy on patterned sapphire substratesHajime Fujikura et al
• All InN/InGaN solid-state potentiometric chloride sensor with super Nernstian sensitivityLingyun Xie et al

International Meetings

Find More Meetings

• November 29 - December 2Nov.292020.11.292020.12.2ISOM’20International Symposium on Imaging, Sensing, and Optical Memory 2020
• June 29 - July 2Jun.292021.6.292021.7.2AM-FPD’212021 The 28th International Workshop on Active-Matrix Flatpanel Displays and Devices-TFT Technologies and FPD Materials-
• July 4 - 7Jul.42021.7.42021.7.7APNFO13The 13th Asia-Pacific Conference on Near-Field Optics
• July 6 - 9Jul.62021.7.62021.7.9IITC20212021 IEEE International Interconnect Technology Conference
• October 13-15Oct.132021.10.132021.10.15ADMETA Plus 2021Advanced Metallization Conference 2021 : 30th Asian Session
• October 31 - November 5Oct.312021.10.312021.11.5EP2DS-24/MSS-2024th International Conference on Electronic Properties of Two-Dimensional Systems /20th International Conference on Modulated Semiconductor Structures Joint Conference
• November 1Nov.12021.11.12021.11.12021 IWDTF2021 International Workshop on Dielectric Thin Films for Future Electron Devices — Science and Technology —
• August 17 - 24Aug.172022.8.172022.8.24LT29The 29th International Conference on Low Temperature Physics

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