![[EM-NANO2023] The 9th International Symposium on Organic and inorganic Electronic Materials and Related Nanotechnologies / June 5-8, 2023 / Ishikawa Industrial Promotion Center](/imgs/banners/banner20230605_EM-NANO2023.png)
Two‐inch Fe‐doped β‐Ga2O3 (010) substrates prepared using vertical Bridgman method
High‐mobility 4 µm MOVPE‐grown (100) β‐Ga2O3 film by parasitic particles suppression
Ultrasonic focusing using a stacked thin‐plate region
Comprehensive analysis on error‐robustness of FeFET computation‐in‐memory for hyperdimensional computing
Ag2S island network reservoir that works with direct optical signal inputs
Bulk-fin field-effect transistor-based capacitorless dynamic random-access memory and its immunity to the work-function variation effect
Formation of a one-dimensional hole channel in MoS2 by structural corrugation
Efficient optical phase modulator based on an III–V metal-oxide-semiconductor structure with a doped graphene transparent electrode
Ultraviolet photodetectors based on Si-Zn-SnO thin film transistors with a stacked channel structure and a patterned NiO capping layer
Thermal expansion coefficient and bulk modulus of silicides
Suppression of partial dislocation glide motion during contraction of stacking faults in SiC epitaxial layers by hydrogen ion implantation
Thioxanthone‐containing blue thermally activated delayed fluorescent emitter
Proposal of compact LSPR sensor system by filter-free wavelength sensor
Orientation-dependent electrochemical reduction and proton evolution in the oxygen-deficient perovskite SrFeO2.5+y
Significant reduction of crack propagation in the strained SiGe/Ge(111) induced by the local growth on the depth-controlled area patterning
Angle-insensitive Huygens' metasurfaces of quadrupole modes
Enhancement of carrier mobility in metal-oxide semiconductor field-effect transistors using negative thermal expansion gate electrodes
[APEX Reviews]
Mapping phonon hydrodynamic strength in micrometer-scale graphite structures
Analysis of formation mechanism of deposited film in a high-aspect-ratio hole during dry etching using fluorocarbon gas plasmas
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