公益社団法人 応用物理学会

第33回(2011年度)応用物理学会論文賞 受賞者

応用物理学会優秀論文賞

受賞者受賞対象論文
三谷昌弘(ALTEDEC)
遠藤尚彦(ALTEDEC)
坪井眞三(ALTEDEC)
岡田隆史(ALTEDEC)
河内玄士朗(ALTEDEC)
松村正清(ALTEDEC)
Relationship between Thin-Film Transistor Characteristics and Crystallographic Orientation in Excimer-Laser-Processed Pseudo-Single-Crystal-Silicon Films Masahiro Mitani, Takahiko Endo, Shinzo Tsuboi, Takashi Okada,Genshiro Kawachi, and Masakiyo Matsumura Jpn. J. Appl. Phys. 49 (2010) 124001
李 大成(京大)
酒井 道(京大)
橘 邦英(京大)
Microplasma-Induced Deformation of an Anomalous Response Spectrum of Electromagnetic Waves Propagating along Periodically Perforated Metal Plates Dae-Sung Lee, Osamu Sakai, and Kunihide Tachibana Jpn. J. Appl. Phys. 48 (2009) 062004
近藤大雄(富士通研,富士通,JST)
佐藤信太郎(富士通研,富士通,JST)
八木克典(富士通研)
原田直樹(富士通研)
佐藤元伸(富士通研,富士通,JST)
二瓶瑞久(富士通研,富士通,JST)
横山直樹(富士通研)
Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes Daiyu Kondo1,2,3, Shintaro Sato1,2,3, Katsunori Yagi1, Naoki Harada1,Motonobu Sato1,2,3, Mizuhisa Nihei1,2,3, and Naoki Yokoyama1 Appl. Phys. Express 3 (2010) 025102
Scott D. Findlay(東大)
齋藤智浩(JFCC)
柴田直哉(東大,JST)
佐藤幸生(東大)
松田潤子(産総研)
浅野耕太(産総研)
秋葉悦男(産総研)
平山 司(JFCC)
幾原雄一(東大,JFCC,東北大)
Direct Imaging of Hydrogen within a Crystalline Environment Scott D. Findlay1, Tomohiro Saito2, Naoya Shibata1,3, Yukio Sato1, Junko Matsuda4, Kohta Asano4, Etsuo Akiba4, Tsukasa Hirayama2, and Yuichi Ikuhara1,2,5 Appl. Phys. Express 3 (2010) 116603
長汐晃輔(東大)
西村知紀(東大)
喜多浩之(東大)
鳥海 明(東大)
Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor Kosuke Nagashio, Tomonori Nishimura, Koji Kita, and Akira Toriumi Jpn. J. Appl. Phys. 49 (2010) 051304
江利口浩二(京大)
中久保義則(京大)
松田朝彦(京大)
鷹尾祥典(京大)
斧 高一(京大)
Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono Jpn. J. Appl. Phys. 49 (2010) 056203

応用物理学会論文奨励賞

受賞者受賞対象論文
安藤崇志(阪大) Low Threshold Voltage and High Mobility N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Hf–Si/HfO2Gate Stack Fabricated by Gate-Last Process Takashi Ando, Tomoyuki Hirano, Kaori Tai, Shinpei Yamaguchi, Shinichi Yoshida, Hayato Iwamoto, Shingo Kadomura, and Heiji Watanabe Jpn. J. Appl. Phys. 49 (2010) 016502
矢田慎介(東大) Single-Crystalline Ferromagnetic Alloy Semiconductor Ge1-xMnxGrown on Ge(111) Shinsuke Yada, Ryohei Okazaki, Shinobu Ohya and Masaaki Tanaka Appl. Phys. Express 3 (2010) 123002
山端元音(東工大) Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K Gento Yamahata, Tetsuo Kodera, Hiroshi Mizuta, Ken Uchida, and Shunri Oda Appl. Phys. Express 2 (2009) 095002
日吉 透(京大) Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment Toru Hiyoshi and Tsunenobu Kimoto Appl. Phys. Express 2 (2009) 091101
正井博和(東北大) High Photoluminescent Property of Low-Melting Sn-Doped Phosphate Glass Hirokazu Masai, Yoshihiro Takahashi, Takumi Fujiwara, Syuji Matsumoto, and Toshinobu Yoko Appl. Phys. Express 3 (2010) 082102
角柳孝輔(NTT物性基礎研) Generation of Non-Classical Microwave Photon States in an Inductor–Capacitor Resonator Coupled to a Superconducting Flux Qubit Kosuke Kakuyanagi, Seiichiro Kagei, Shiro Saito, Hayato Nakano, and Kouichi Semba Appl. Phys. Express 3 (2010) 103101
片瀬貴義(東工大応セラ研) High Critical Current Density 4MA/cm2 in Co-Doped BaFe2As2 Epitaxial Films Grown on (La,Sr)(Al,Ta)O3 Substrates without Buffer Layers Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, and Hideo Hosono Appl. Phys. Express 3 (2010) 063101
井上隼一(東工大) Self Contact Organic Transistors Jun-ichi Inoue, Hiroshi Wada, and Takehiko Mori Jpn. J. Appl. Phys. 49 (2010) 071605

応用物理学会解説論文賞

受賞者受賞対象論文
高野義彦(物材機構) 新しい鉄系超伝導物質の構造と物性 Yoshihiko Takano 応用物理 第79 巻第1号 (2010) pp. 20-24
伊藤弘昌(理研) テラヘルツ波光源:レーザーとメーザーの境界 Hiromasa Ito 応用物理 第79 巻第6号 (2010) pp. 524-529

(注)所属は論文投稿時のものです.