第29回（2007年度）応用物理学会論文賞受賞者

JJAP論文賞

受賞者	受賞対象論文
櫛引淳一（東北大）荒川元孝（東北大）大橋雄二（東北大）鈴木光二（東北大）丸山貴久（東北大）	A Super-Precise CTE Evaluation Method for Ultra-Low-Expansion Glasses Using the LFB Ultrasonic Material Characterization System Jun-ichi Kushibiki, Mototaka Arakawa, Yuji Ohashi, Kouji Suzuki and Takahisa Maruyama Jpn. J. Appl. Phys. Vol. 44, No. 6B, 2005, pp. 4374-4380
竹谷純一（電力中研）塚越一仁（理研）青柳克信（理研）竹延大志（東北大）岩佐義宏（東北大）	Hall Effect of Quasi-Hole Gas in Organic Single-Crystal Transistors Jun Takeya^1,2,3, Kazuhito Tsukagoshi^2,4, Yoshinobu Aoyagi^2,5, Taishi Takenobu^3,6and Yoshihiro Iwasa^3,6 Jpn. J. Appl. Phys. Vol. 44, No. 46, 2005, pp. L1393-L1396
三輪真嗣（阪大）白石誠司（阪大）水口将輝（阪大）新庄輝也（阪大）鈴木義茂（阪大）	Spin-Dependent Transport in C₆₀-Co Nano-Composites Shinji Miwa, Masashi Shiraishi, Masaki Mizuguchi, Teruya Shinjo and Yoshishige Suzuki Jpn. J. Appl. Phys. Vol. 45, No. 28, 2006, pp. L717-L719
赤坂泰志（半導体テクノ）中村源志（半導体テクノ）白石賢二（筑波大）梅澤直人（物・材機構）山部紀久夫（筑波大）小川修（半導体テクノ）李明範（半導体テクノ）渡部平司（大阪大学）知京豊裕（物・材機構）大塚文雄（半導体テクノ）奈良安雄（半導体テクノ）中村邦雄（半導体テクノ）	Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning Yasushi Akasaka^1,2, Genji Nakamura¹, Kenji Shiraishi^2,3,4, Naoto Umezawa³, Kikuo Yamabe^2,3, Osamu Ogawa¹, Myoungbum Lee¹,Toshio Amiaka¹, Tooru Kasuya¹Heiji Watanabe⁵, Toyohiro Chikyow³, Fumio Ootsuka¹, Yasuo Nara¹and Kunio Nakamura¹ Jpn. J. Appl. Phys. Vol. 45, No. 49, 2006, pp. L1289-L1292
船戸充（京大）上田雅也（京大）川上養一（京大）成川幸男（日亜化学工業）小杉卓生（日亜化学工業）高橋正良（日亜化学工業）向井孝志（日亜化学工業）	Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {1122} GaN Bulk Substrates Mitsuru Funato, Masaya Ueda, Yoichi Kawakami, Yukio Narukawa¹, Takao Kosugi¹, Masayoshi Takahashi¹ and Takashi Mukai¹ Jpn. J. Appl. Phys. Vol. 45, No. 26, 2006, pp. L659-L662
古川雄三（豊橋技科大）米津宏雄（豊橋技科大）森崎祐二（豊橋技科大）文秀榮（豊橋技科大）石地正義（豊橋技科大）若原昭浩（豊橋技科大）	Monolithic Implementation of Elemental Devices for Optoelectronic Integrated Circuit in Lattice-Matched Si/III-V-N Alloy Layers Yuzo Furukawa, Hiroo Yonezu, Yuji Morisaki, Soo-Young Moon, Seigi Ishiji and Akihiro Wakahara Jpn. J. Appl. Phys. Vol. 45, No. 35, 2006, pp. L920-L922
Vinod Adivarahan（南カロライナ大） Asif Khan（南カロライナ大）	Room-Temperature Stimulated Emission from AlN at 214 nm Maxim Shatalov, Mikhail Gaevski, Vinod Adivarahan and Asif Khan Jpn. J. Appl. Phys. Vol. 45, No. 49, 2006, pp. L1286-L1288
M. Bibes（パリ南大）	Ferroelectricity Down to at Least 2 nm in Multiferroic BiFeO₃Epitaxial Thin Films H. Béa, S. Fusil, K. Bouzehouane, M. Bibes¹, M. Sirena, G. Herranz, E. Jacquet, J.-P. Contour and A. Barthélémy Jpn. J. Appl. Phys. Vol. 45, No. 7, 2006, pp. L187-L189
安藤敏夫（金沢大）内橋貴之（金沢大）古寺哲幸（金沢大）宮城篤（金沢大）山下隼人（金沢大）坂下満（金沢大）	High-Speed Atomic Force Microscopy for Studying the Dynamic Behavior of Protein Molecules at Work Toshio Ando, Takayuki Uchihashi, Noriyuki Kodera, Atsushi Miyagi, Ryo Nakakita ,Hayato Yamashita and Mitsuru Sakashita Jpn. J. Appl. Phys. Vol. 45, No. 3B, 2006, pp. 1897-1903
堀部雅弘（富士通研）二瓶瑞久（富士通研）近藤大雄（富士通研）川端章夫（富士通研）粟野祐二（富士通研）	Carbon Nanotube Growth Technologies Using Tantalum Barrier Layer for Future ULSIs with Cu/Low-k Interconnect Processes Masahiro Horibe^1,2, Mizuhisa Nihei^1,3, Daiyu Kondo^1,3, Akio Kawabata^1,3and Yuji Awano^1,3 Jpn. J. Appl. Phys. Vol. 44, No. 7A, 2005, pp. 5309-5312

JJAP論文奨励賞

受賞者	受賞対象論文
桜庭裕弥（東北大）	Huge Spin-Polarization of L2₁-Ordered Co₂MnSi Epitaxial Heusler Alloy Film Yuya Sakuraba, Jun Nakata, Mikihiko Oogane, Hitoshi Kubota¹, Yasuo Ando, Akimasa Sakuma and Terunobu Miyazaki Jpn. J. Appl. Phys. Vol. 44, No. 35, 2005, pp. L1100-L1102
玉木隆幸（阪大）	Welding of Transparent Materials Using Femtosecond Laser Pulses Takayuki Tamaki, Wataru Watanabe, Junji NishiiI¹and Kazuyoshi Itoh Jpn. J. Appl. Phys. Vol. 44, No. 22, 2005, pp. L687-L689
三浦正志（名古屋大）	Enhancement of Flux-Pinning in Epitaxial Sm_1+xBa_2-xCu₃O_yFilms by Introduction of Low-T_cNanoparticles Masashi Miura^1,6, Yutaka Yoshida^1,6, Yusuke Ichino^1,6, Yoshiaki Takai¹, Kaname Matsumoto^2,6, Ataru Ichinose^3,6, Shigeru Horii^4,6and Masashi Mukaida^5,6 Jpn. J. Appl. Phys. Vol. 45, No. 1, 2006, pp. L11-L13
峯元高志（立命館大）	Fabrication of Spherical Silicon Solar Cells with Semi-Light-Concentration System Takashi Minemoto, Chikao Okamoto, Satoshi Omae, Mikio Murozono¹,Hideyuki Takakura and Yoshihiro Hamakawa Jpn. J. Appl. Phys. Vol. 44, No. 7A, 2005, pp. 4820-4824
小山貴久（兵庫県立大）	Hard X-Ray Nano-Interferometer and Its Application to High-Spatial-Resolution Phase Tomography Takahisa Koyama, Takuya Tsuji, Keisuke Yoshida, Hidekazu Takano, Yoshiyuki Tsusaka and Yasushi Kagoshima Jpn. J. Appl. Phys. Vol. 45, No. 43, 2006, pp. L1159-L1161
Winadda Wongwiriyapan（阪大）	Single-Walled Carbon Nanotube Thin-Film Sensor for Ultrasensitive Gas Detection Winadda Wongwiriyapan, Shin-ichi Honda, Hirofumi Konishi, Tomoaki Mizuta, Takashi Ikuno, Tatsuya Ito¹, Toru Maekawa¹, Kengo Suzuki¹, Hiroshi Ishikawa¹, Kenjiro Oura and Mitsuhiro Katayama Jpn. J. Appl. Phys. Vol. 44, No. 16, 2005, pp. L482-L484
小川修一（東北大）	Rate-Limiting Reactions of Growth and Decomposition Kinetics of Very Thin Oxides on Si(001) Surfaces Studied by Reflection High-Energy Electron Diffraction Combined with Auger Electron Spectroscopy Shuichi Ogawa¹and Yuji Takakuwa^1,2 Jpn. J. Appl. Phys. Vol. 45, No. 9A, 2006, pp. 7063-7079
有吉誠一郎（理研）	Superconducting Detector Array for Terahertz Imaging Applications Seiichiro Ariyoshi, Chiko Otani, Adrian Dobroiu, Hiroshi Matsuo², Hiromi Sato³, Tohru Taino⁴, Kodo Kawase and Hirohiko M. Shimizu⁵ Jpn. J. Appl. Phys. Vol. 45, No. 37, 2006, pp. L1004-L1006
近藤剛（東工大）	Investigation of Spin Voltaic Effect in a p-n Heterojunction Tsuyoshi Kondo, Jun-ji Hayafuji and Hiro Munekata Jpn. J. Appl. Phys. Vol. 45, No. 26, 2006, pp. L663-L665

解説論文賞

受賞者	受賞対象論文
高木信一（東大）	Si系高移動度MOSトランジスタ技術Si-based high-mobility MOS transistor technologies Shin-ichi Takagi 応用物理第74巻、第9号、p. 1158-1170OYO BUTURI, Vol.74, No.09,p.1178-1184 (2005)
盛永篤郎（東理大）	21世紀の国際単位と標準Units and standards in 21st century Atsuo Morinaga 応用物理第74巻第6号 p.0718-0725 OYO BUTURI, Vol.74, No.6,p.0718-0725 (2005)
竹添秀男（東工大）高西陽一（東工大）	Bent-Core Liquid Crystals: Their Mysterious and Attractive World Hideo Takezoe and Yoichi Takanishi Jpn. J. Appl. Phys. Vol. 45, No. 2A, 2006, pp. 597-625

（注）所属は論文投稿時のものです．