Direct Observation of Strain Distribution in InP/In1-xGaxP Heterointerfaces by the Compositional Analysis by Thickness Fringe MethodHiroshi Kakibayashi,Kazuhiro ItohJpn. J. Appl. Phys. Vol.30 (1991) Pt.2 No.1A pp.L52-L55
学会賞B(奨励賞)
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中田 義昭(富士通研)
High Two-Dimensional Electron Gas Mobility Enhanced by Ordering in InGaAs/N-InAlAs Heterostructures Grown on (110)-Oriented InP Substrates by Molecular Beam EpitaxyYoshiaki Nakata,Osamu Ueda,Toshio FujiiJpn. J. Appl. Phys. Vol.30 (1991) Pt.2 No.2B pp.L249-L251
渡辺 悟(富士通研)
Silicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling WaterSatoru Watanabe,Mayumi Shigeno,Noriaki Nakayama,Takashi ItoJpn. J. Appl. Phys. Vol.30 (1991) Pt.1 No.12B pp.3575-3579
作田 健(阪大基礎工)
Experiment and Analysis on High-Electric-Field Transport in Epitaxial YBaCuO Thin FilmsKen Sakuta,Katunori Asano,Syuji Arisaka,Ken-ichi Matsui,Takeshi KobayashiJpn. J. Appl. Phys. Vol.30 (1991) Pt.1 No.12A pp.3355-3363