The Japan Society of Applied Physics

45th JSAP Outstanding Paper Award Recipients 2023

Information

In recognition of their honor, the awarded articles are free to read for a limited time.
Please visit https://iopscience.iop.org/journal/1882-0786/page/Awards

JSAP Paper Award

Award RecipientsTitle of the Paper
Ziyi Zhang, Maki Kushimoto, Akira Yoshikawa, Koji Aoto, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano Continuous‐wave lasing of AlGaN‐based ultraviolet laser diode at 274.8 nm by current injection Appl. Phys. Express 15 (2022) 041007
Shunya Tanaka, Kazuki Yamada, Tomoya Omori, Sho Iwayama, Kosuke Sato, Hideto Miyake, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki AlGaN‐based UV‐B laser diode with a wavelength of 290 nm on 1 µm periodic concavo‐convex pattern AlN on a sapphire substrate Appl. Phys. Express 14 (2021) 055505
Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, Shiyu Xiao, Takao Nakamura, and Hideto Miyake 263 nm wavelength UV‐C LED on face‐to‐face annealed sputter‐deposited AlN with low screw‐ and mixed‐type dislocation densities Appl. Phys. Express 15 (2022) 055501
Akifumi Yogo, Seyed Reza Mirfayzi, Yasunobu Arikawa, Yuki Abe, Tianyun Wei, Zechen Lan, Daniil O. Golovin, Masato Kanasaki, Shinsuke Fujioka, Mitsuo Nakai, Takehito Hayakawa, Hiroaki Nishimura, and Ryosuke Kodama Single shot radiography by a bright source of laser‐driven thermal neutrons and x‐rays Appl. Phys. Express 14 (2021) 106001
Keita Ichikawa, Manh Hung Chu, Makoto Moriyama, Haruka Suzuki, Daiki Iino, Hiroyuki Fukumizu, Kazuaki Kurihara, and Hirotaka Toyoda Angular distribution measurement of high‐energy argon neutral and ion in a 13.56 MHz capacitively‐coupled plasma Appl. Phys. Express 14 (2021) 126001
Yutaka Ohno, Shingo Tanaka, Masanori Kohyama, Koji Inoue, Yasuo Shimizu, Yasuyoshi Nagai, and Hideto Yoshida Insight into segregation sites for oxygen impurities at grain boundaries in silicon Appl. Phys. Express 14 (2021) 041003
Wenchang Yeh, Toshiki Shirakawa, and Anh Hoang Pham Tendency of crystal orientation rotation toward stable {001} <100> during lateral crystal growth of Si thin film sandwiched by SiO2 Jpn. J. Appl. Phys. 60 (2021) SBBM06
Kota Endo, Masashi Sekiya, Jaeyoung Kim, Kento Sato, and Takehito Suzuki Resonant tunneling diode integrated with metalens for high‐directivity terahertz waves Appl. Phys. Express 14 (2021) 082001

JSAP Young Scientist Award

Award RecipientsTitle of the Paper
Keita Tachiki Mobility enhancement in heavily doped 4H‐SiC (0001), (1120), and (1100) MOSFETs via an oxidation‐minimizing process Appl. Phys. Express 15 (2022) 071001
Ryota Maeda AlN/Al0.5Ga0.5N HEMTs with heavily Si‐doped degenerate GaN contacts prepared via pulsed sputtering Appl. Phys. Express 15 (2022) 031002
Megumi Kurosu Buckling‐induced quadratic nonlinearity in silicon phonon waveguide structures Jpn. J. Appl. Phys. 61 (2022) SD1025
Ryota Fukuzawa Quantitative capacitance measurements in frequency modulation electrostatic force microscopy Jpn. J. Appl. Phys. 61 (2022) SL1005
Yuya Takara Analysis of the elemental effects on the surface potential of aluminum alloy using machine learning Jpn. J. Appl. Phys. 61 (2022) SL1008
Pavel Kirilenko InGaN‐based green micro‐LED efficiency enhancement by hydrogen passivation of the p‐GaN sidewall Appl. Phys. Express 15 (2022) 084003

Award for Best Review Paper

Award RecipientsTitle of the Paper
Kohei Nakajima Physical reservoir computing‐an introductory perspective Jpn. J. Appl. Phys. 59 (2020) 060501
Momoko Onodera, Satoru Masubuchi, Rai Moriya, and Tomoki Machida Assembly of van der Waals heterostructures: exfoliation, searching, and stacking of 2D materials Jpn. J. Appl. Phys. 59 (2020) 010101
Koji Eriguchi Characterization techniques of ion bombardment damage on electronic devices during plasma processing‐plasma process‐induced damage Jpn. J. Appl. Phys. 60 (2021) 040101