The Japan Society of Applied Physics

42nd JSAP Outstanding Paper Award Recipients 2020

Information

In recognition of their honor, the awarded articles are free to read until July 31st, 2021.
Please visit https://iopscience.iop.org/journal/1882-0786/page/Awards

JSAP Paper Award

Award RecipientsTitle of the Paper
Shinya Ota, Hiroki Matsumoto, Akira Ando, Tsuyoshi Sekitani, Ryuhei Kohno, Tomohiro Koyama, and Daichi Chiba CoFeB/MgO-based magnetic tunnel junction directly formed on a flexible substrate Shinya Ota, Masaki Ono, Hiroki Matsumoto, Akira Ando, Tsuyoshi Sekitani, Ryuhei Kohno, Shogo Iguchi, Tomohiro Koyama, and Daichi Chiba Appl. Phys. Express 12 (2019) 053001
Ziyi Zhang, Maki Kushimoto, Tadayoshi Sakai, Naoharu Sugiyama, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano A 271.8 nm deep-ultraviolet laser diode for room temperature operation Ziyi Zhang, Maki Kushimoto, Tadayoshi Sakai, Naoharu Sugiyama, Leo J. Schowalter, Chiaki Sasaoka, and Hiroshi Amano Appl. Phys. Express 12 (2019) 124003
Atula S. D. Sandanayaka, Toshinori Matsushima, Fatima Bencheikh, Shinobu Terakawa, William J. Potscavage, Jr., Chuanjiang Qin, Takashi Fujihara, Kenichi Goushi, Jean-Charles Ribierre, and Chihaya Adachi Indication of current-injection lasing from an organic semiconductor Atula S. D. Sandanayaka, Toshinori Matsushima, Fatima Bencheikh, Shinobu Terakawa, William J. Potscavage, Jr., Chuanjiang Qin, Takashi Fujihara, Kenichi Goushi, Jean-Charles Ribierre, and Chihaya Adachi Appl. Phys. Express 12 (2019) 061010
Seiya Kasai, Akihisa Ichiki, and Yukihiro Tadokoro Divergence of relative difference in Gaussian distribution function and stochastic resonance in a bistable system with frictionless state transition Seiya Kasai, Akihisa Ichiki, and Yukihiro Tadokoro Appl. Phys. Express 11 (2018) 037301
Yukio Kashima, Noritoshi Maeda, Eriko Matsuura, Masafumi Jo, Takeshi Iwai, Toshiro Morita, Mitsunori Kokubo, Takaharu Tashiro, Ryuichiro Kamimura, Yamato Osada, Hideki Takagi, and Hideki Hirayama High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer Yukio Kashima, Noritoshi Maeda, Eriko Matsuura, Masafumi Jo, Takeshi Iwai, Toshiro Morita, Mitsunori Kokubo, Takaharu Tashiro, Ryuichiro Kamimura, Yamato Osada, Hideki Takagi, and Hideki Hirayama Appl. Phys. Express 11 (2018) 012101
Masayuki Imanishi, Kosuke Murakami, Takumi Yamada, Keisuke Kakinouchi, Kosuke Nakamura, Tomoko Kitamura, Kanako Okumura, Masashi Yoshimura, and Yusuke Mori Promotion of lateral growth of GaN crystals on point seeds by extraction of substrates from melt in the Na-flux method Masayuki Imanishi, Kosuke Murakami, Takumi Yamada, Keisuke Kakinouchi, Kosuke Nakamura, Tomoko Kitamura, Kanako Okumura, Masashi Yoshimura, and Yusuke Mori Appl. Phys. Express 12 (2019) 045508
Shintaro Fujii, Fumitaka Ishiwari, Yuki Komoto, Lixinzhu Su, Yuto Yamagata, Akira Aiba, Tomoaki Nishino, and Takanori Fukushima Control of molecular orientation in a single-molecule junction with a tripodal triptycene anchoring unit: toward a simple and facile single-molecule diode Shintaro Fujii, Fumitaka Ishiwari, Yuki Komoto, Lixinzhu Su, Yuto Yamagata, Atsuko Kosaka, Akira Aiba, Tomoaki Nishino, Takanori Fukushima, and Manabu Kiguchi Jpn. J. Appl. Phys. 58 (2019) 035003

JSAP Young Scientist Award

Award RecipientsTitle of the Paper
Shohei Hayashi Influence of basal-plane dislocation structures on expansion of single Shockley-type stacking faults in forward-current degradation of 4H-SiC p–i–n diodes Shohei Hayashi, Tamotsu Yamashita, Junji Senzaki, Masaki Miyazato, Mina Ryo, Masaaki Miyajima, Tomohisa Kato, Yoshiyuki Yonezawa, Kazutoshi Kojima, and Hajime Okumura Jpn. J. Appl. Phys. 57 (2018) 04FR07
Takanori Takahashi Hot carrier effects in InGaZnO thin-film transistor Takanori Takahashi, Ryoko Miyanaga, Mami N. Fujii, Jun Tanaka, Kazushige Takechi, Hiroshi Tanabe, Juan Paolo Bermundo, Yasuaki Ishikawa, and Yukiharu Uraoka Appl. Phys. Express 12 (2019) 094007
Haruka Omachi Aqueous two-phase extraction of semiconducting single-wall carbon nanotubes with isomaltodextrin and thin-film transistor applications “Haruka Omachi, Tomohiko Komuro, Kaisei Matsumoto, Minako Nakajima, Hikaru Watanabe, Jun Hirotani, Yutaka Ohno, and Hisanori Shinohara Appl. Phys. Express 12 (2019) 097003
Takumi Nishikubo Optimized negative thermal expansion induced by gradual intermetallic charge transfer in Bi1−x Sbx NiO3 Takumi Nishikubo, Yuki Sakai, Kengo Oka, Masaichiro Mizumaki, Tetsu Watanuki, Akihiko Machida, Naoyuki Maejima, Shigenori Ueda, Takashi Mizokawa, and Masaki Azuma Appl. Phys. Express 11 (2018) 061102
Masaaki Shimatani Enhanced photogating via pyroelectric effect induced by insulator layer for high-responsivity long-wavelength infrared graphene-based photodetectors operating at room temperature Masaaki Shimatani, Shinpei Ogawa, Shoichiro Fukushima, Satoshi Okuda, Yasushi Kanai, Takao Ono, and Kazuhiko Matsumoto Appl. Phys. Express 12 (2019) 025001

Award for Best Review Paper

Award RecipientsTitle of the Paper
Masahiro Nomura, Junichiro Shiomi, Takuma Shiga, and Roman Anufriev Thermal phonon engineering by tailored nanostructures Masahiro Nomura, Junichiro Shiomi, Takuma Shiga, and Roman Anufriev Jpn. J. Appl. Phys. 57 (2018) 080101
Dany Lachance-Quirion, Yutaka Tabuchi, Arnaud Gloppe, Koji Usami, and Yasunobu Nakamura Hybrid quantum systems based on magnonics Dany Lachance-Quirion, Yutaka Tabuchi, Arnaud Gloppe, Koji Usami, and Yasunobu Nakamura Appl. Phys. Express 12 (2019) 070101
Akira Toriumi and Tomonori Nishimura Germanium CMOS potential from material and process perspectives: Be more positive about germanium Akira Toriumi and Tomonori Nishimura Jpn. J. Appl. Phys. 57 (2018) 010101