The Japan Society of Applied Physics

40th JSAP Outstanding Paper Award Recipients 2018

Information

In recognition of their honor, the awarded articles are free to read until July 31st, 2019.
Please visit http://iopscience.iop.org/journal/1347-4065/page/JSAP Outstanding Paper Award

JSAP Paper Award

Award RecipientsTitle of the Paper
Michihiro Yamada, Makoto Tsukahara, Yuichi Fujita, Takahiro Naito, Shinya Yamada, Kentarou Sawano, and Kohei Hamaya Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements Michihiro Yamada, Makoto Tsukahara, Yuichi Fujita, Takahiro Naito, Shinya Yamada, Kentarou Sawano, and Kohei Hamaya Appl. Phys. Express 10 (2017) 093001
Sriram Krishnamoorthy, Zhanbo Xia, Sanyam Bajaj, and Siddharth Rajan Delta-doped β-gallium oxide field-effect transistor Sriram Krishnamoorthy, Zhanbo Xia, Sanyam Bajaj, Mark Brenner, and Siddharth Rajan Appl. Phys. Express 10 (2017) 051102
Kazuki Tani, Shin-ichi Saito, Katsuya Oda, Makoto Miura, Yuki Wakayama, Tadashi Okumura, Toshiyuki Mine, and Tatemi Ido Room-temperature direct band-gap electroluminescence from germanium (111)-fin light-emitting diodes Kazuki Tani, Shin-ichi Saito, Katsuya Oda, Makoto Miura, Yuki Wakayama, Tadashi Okumura, Toshiyuki Mine, and Tatemi Ido Jpn. J. Appl. Phys. 56 (2017) 032102
Hajime Fujikura, Taichiro Konno, Takehiro Yoshida, and Fumimasa Horikiri Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates Hajime Fujikura, Taichiro Konno, Takehiro Yoshida, and Fumimasa Horikiri Jpn. J. Appl. Phys. 56 (2017) 085503
Shinya Kumagai, Chun-Yao Chang, Jonghyeon Jeong, Mime Kobayashi, Tetsuji Shimizu, and Minoru Sasaki Development of plasma-on-chip: Plasma treatment for individual cells cultured in media Shinya Kumagai, Chun-Yao Chang, Jonghyeon Jeong, Mime Kobayashi, Tetsuji Shimizu, and Minoru Sasaki Jpn. J. Appl. Phys. 55 (2016) 01AF01
Tomonori Nishimura, Takeaki Yajima, and Akira Toriumi Reexamination of Fermi level pinning for controlling Schottky barrier height at metal/Ge interface Tomonori Nishimura, Takeaki Yajima, and Akira Toriumi Appl. Phys. Express 9 (2016) 081201
Makoto Nogami, Akira Sasahara, Toyoko Arai, and Masahiko Tomitori Atomic-scale electric capacitive change detected with a charge amplifier installed in a non-contact atomic force microscope Makoto Nogami, Akira Sasahara, Toyoko Arai, and Masahiko Tomitori Appl. Phys. Express 9 (2016) 046601

JSAP Young Scientist Award

Award RecipientsTitle of the Paper
Naoki Kawano Effect of organic moieties on the scintillation properties of organic–inorganic layered perovskite-type compounds Naoki Kawano, Masanori Koshimizu, Akiyoshi Horiai, Fumihiko Nishikido, Rie Haruki, Shunji Kishimoto, Kengo Shibuya, Yutaka Fujimoto, Takayuki Yanagida, and Keisuke Asai Jpn. J. Appl. Phys. 55 (2016) 110309
Shota Sasaki Roles of charged particles and reactive species on cell membrane permeabilization induced by atmospheric-pressure plasma irradiation Shota Sasaki, Makoto Kanzaki, Yutaro Hokari, Kanako Tominami, Takayuki Mokudai, Hiroyasu Kanetaka, and Toshiro Kaneko Jpn. J. Appl. Phys. 55 (2016) 07LG04
Takeru Maekawa Oscillation up to 1.92 THz in resonant tunneling diode by reduced conduction loss Takeru Maekawa, Hidetoshi Kanaya, Safumi Suzuki, and Masahiro Asada Appl. Phys. Express 9 (2016) 024101
Kong Fai Tai From 20.9 to 22.3% Cu(In,Ga)(S,Se)2 solar cell: Reduced recombination rate at the heterojunction and the depletion region due to K-treatment Kong Fai Tai, Rui Kamada, Takeshi Yagioka, Takuya Kato, and Hiroki Sugimoto Jpn. J. Appl. Phys. 56 (2017) 08MC03

Award for Best Review Paper

Award RecipientsTitle of the Paper
Eisuke ABE, Kohei ITOH Current status and future prospects for solid-state quantum information device development to realize digital universal quantum computing Eisuke ABE, Kohei ITOH OYO BUTURI Vol.86 No.6 (2017) pp.453-466
Yasuo Cho High resolution characterizations of fine structure of semiconductor device and material using scanning nonlinear dielectric microscopy Yasuo Cho Jpn. J. Appl. Phys. 56 (2017) 100101