The Japan Society of Applied Physics

43rd JSAP Outstanding Paper Award Recipients 2021

Information

In recognition of their honor, the awarded articles are free to read until July 31st, 2022.
Please visit https://iopscience.iop.org/journal/1882-0786/page/Awards

JSAP Paper Award

Award RecipientsTitle of the Paper
Kosuke Sato, Shinji Yasue, Kazuki Yamada, Shunya Tanaka, Tomoya Omori, Sayaka Ishizuka, Shohei Teramura, Yuya Ogino, Sho Iwayama, Hideto Miyake, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al0.6Ga0.4N/AlN/sapphire Kosuke Sato, Shinji Yasue, Kazuki Yamada, Shunya Tanaka, Tomoya Omori, Sayaka Ishizuka, Shohei Teramura, Yuya Ogino, Sho Iwayama, Hideto Miyake, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, and Isamu Akasaki Appl. Phys. Express 13 (2020) 031004
Tatsushi Hamaguchi, Yukio Hoshina, Kentaro Hayashi, Masamichi Ito, Maho Ohara, Tatsurou Jyoukawa, Mikihiro Yokozeki, Rintaro Koda, and Katsunori Yanashima Room-temperature continuous-wave operation of green vertical-cavity surface-emitting lasers with a curved mirror fabricated on {20−21} semi-polar GaN Tatsushi Hamaguchi, Yukio Hoshina, Kentaro Hayashi, Masayuki Tanaka, Masamichi Ito, Maho Ohara, Tatsurou Jyoukawa, Noriko Kobayashi, Hideki Watanabe, Mikihiro Yokozeki, Rintaro Koda, and Katsunori Yanashima Appl. Phys. Express 13 (2020) 041002
Shigefusa F. Chichibu, Kohei Shima, Kazunobu Kojima, Shin-ya Takashima, Katsunori Ueno, Masaharu Edo, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Shoji Ishibashi, and Akira Uedono Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures Shigefusa F. Chichibu, Kohei Shima, Kazunobu Kojima, Shin-ya Takashima, Katsunori Ueno, Masaharu Edo, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Shoji Ishibashi, and Akira Uedono Jpn. J. Appl. Phys. 58 (2019) SC0802
Koichiro Kato, Yuki Maekawa, Naoki Watanabe, Kenji Sasaoka, and Takahiro Yamamoto Discovery of new microscopic structures in surface water on graphene using data science Koichiro Kato, Yuki Maekawa, Naoki Watanabe, Kenji Sasaoka, and Takahiro Yamamoto Jpn. J. Appl. Phys. 59 (2020) 025001
Yuhei Seki, Yasushi Hoshino, and Jyoji Nakata Electrical properties and conduction mechanisms of heavily B+-ion-implanted type IIa diamond: effects of temperatures during the ion implantation and postannealing upon electrical conduction Yuhei Seki, Yasushi Hoshino, and Jyoji Nakata Jpn. J. Appl. Phys. 59 (2020) 021003
Mitsuhiro Omura, Junichi Hashimoto, Takahiro Adachi, Yusuke Kondo, Masao Ishikawa, Junko Abe, Itsuko Sakai, Hisataka Hayashi, Makoto Sekine, and Masaru Hori Formation mechanism of sidewall striation in high-aspect-ratio hole etching Mitsuhiro Omura, Junichi Hashimoto, Takahiro Adachi, Yusuke Kondo, Masao Ishikawa, Junko Abe, Itsuko Sakai, Hisataka Hayashi, Makoto Sekine, and Masaru Hori Jpn. J. Appl. Phys. 58 (2019) SEEB02
Shigeya Kimura, Hisashi Yoshida, Shota Uchida, and Akihisa Ogino Thermionic emission and conversion properties of n-type AlGaN thin film cathodes grown on 6H–SiC substrates Shigeya Kimura, Hisashi Yoshida, Shota Uchida, and Akihisa Ogino Jpn. J. Appl. Phys. 59 (2020) SGGF01

JSAP Young Scientist Award

Award RecipientsTitle of the Paper
Takuya Ozaki Red-emitting InxGa1−xN/InyGa1−yN quantum wells grown on lattice-matched InyGa1−yN/ScAlMgO4(0001) templates Takuya Ozaki, Mitsuru Funato, and Yoichi Kawakami Appl. Phys. Express 12 (2019) 011007
Takuma Kobayashi Design and formation of SiC (0001)/SiO2 interfaces via Si deposition followed by low-temperature oxidation and high-temperature nitridation Takuma Kobayashi, Takafumi Okuda, Keita Tachiki, Koji Ito, Yu-ichiro Matsushita, and Tsunenobu Kimoto Appl. Phys. Expres 13 (2020) 091003
Hiroyuki Matsushima Dependence of humidity-stress impact on passivation film for edge termination area in 4H-SiC diodes Hiroyuki Matsushima, Yuki Mori, Akio Shima, and Noriyuki Iwamuro Jpn. J. Appl. Phys. 59 (2020) 104003
Munetaka Noguchi Carrier transport properties in inversion layer of Si-face 4H–SiC MOSFET with nitrided oxide Munetaka Noguchi, Toshiaki Iwamatsu, Hiroyuki Amishiro, Hiroshi Watanabe, Naruhisa Miura, Koji Kita, and Satoshi Yamakawa Jpn. J. Appl. Phys. 58 (2019) 031004
Naotaka Kasuya High carrier density, electrostatic doping in organic single crystal semiconductors using electret polymers Naotaka Kasuya, Satoru Imaizumi, Sylvain Lectard, Hiroyuki Matsui, Shun Watanabe, and Jun Takeya Appl. Phys. Express 12 (2019) 071001

Award for Best Review Paper

Award RecipientsTitle of the Paper
Tsunenobu Kimoto and Heiji Watanabe Defect engineering in SiC technology for high-voltage power devices Tsunenobu Kimoto and Heiji Watanabe Appl. Phys. Express 13 (2020) 120101
Tohru Oka Recent development of vertical GaN power devices Tohru Oka Jpn. J. Appl. Phys. 58 (2019) SB0805