Toshiaki Tsuchiya and Yukinori Ono |
Charge pumping current from single Si/SiO2 interface traps: Direct observation of Pb centers and fundamental trap-counting by the charge pumping method
Toshiaki Tsuchiya1 and Yukinori Ono2
Jpn. J. Appl. Phys. 54 (2015) 04DC01 |
Yoshiki Kamata, Masahiro Koike, Masashi Kurosawa, Hiroyuki Ota, Osamu Nakatsuka, Shigeaki Zaima, and Tsutomu Tezuka |
Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS
Yoshiki Kamata1, Masahiro Koike1, Etsuo Kurosawa1, Masashi Kurosawa2, Hiroyuki Ota1, Osamu Nakatsuka2, Shigeaki Zaima2, and Tsutomu Tezuka1
Appl. Phys. Express 7 (2014) 121302 |
Hiroki Shioya, Yoshiaki Shoji, Noriya Seiki, Masaki Nakano, Takanori Fukushima, and Yoshihiro Iwasa |
Raising the metal–insulator transition temperature of VO2 thin films by surface adsorption of organic polar molecules
Hiroki Shioya1, Yoshiaki Shoji2, Noriya Seiki2, Masaki Nakano1, Takanori Fukushima2, and Yoshihiro Iwasa1,3
Appl. Phys. Express 8 (2015) 121101 |
Akio Fukushima, Takayuki Seki, Kay Yakushiji, Hitoshi Kubota, Hiroshi Imamura, Shinji Yuasa, and Koji Ando |
Spin dice: A scalable truly random number generator based on spintronics
Akio Fukushima, Takayuki Seki, Kay Yakushiji, Hitoshi Kubota, Hiroshi Imamura, Shinji Yuasa, and Koji Ando
Appl. Phys. Express 7 (2014) 083001 |
Takahiro Fukui, Yuki Doi, Takehide Miyazaki, Yoshiyuki Miyamoto, Hiromitsu Kato, Tsubasa Matsumoto, Toshiharu Makino, Satoshi Yamasaki, Norio Tokuda, Mutsuko Hatano, Yuki Sakagawa, Hiroki Morishita, Toshiyuki Tashima, Shinji Miwa, Yoshishige Suzuki, and Norikazu Mizuochi |
Perfect selective alignment of nitrogen-vacancy centers in diamond
Takahiro Fukui1, Yuki Doi1, Takehide Miyazaki2, Yoshiyuki Miyamoto2, Hiromitsu Kato3,4, Tsubasa Matsumoto3,4, Toshiharu Makino3,4, Satoshi Yamasaki3,4, Ryusuke Morimoto5, Norio Tokuda5, Mutsuko Hatano4,6, Yuki Sakagawa1, Hiroki Morishita1,4, Toshiyuki Tashima1,4, Shinji Miwa1,4, Yoshishige Suzuki1,4, and Norikazu Mizuochi1,4
Appl. Phys. Express 7 (2014) 055201 |
Zenji Yatabe, Yujin Hori, Joel T. Asubar, Masamichi Akazawa, Taketomo Sato, and Tamotsu Hashizume |
Characterization of electronic states at insulator/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors
Zenji Yatabe1,2, Yujin Hori1, Wan-Cheng Ma1, Joel T. Asubar1,2, Masamichi Akazawa1, Taketomo Sato1, and Tamotsu Hashizume1,2
Jpn. J. Appl. Phys. 53 (2014) 100213 |
Yoshihiro Ishitani |
Carrier dynamics and related electronic band properties of InN films
Yoshihiro Ishitani
Jpn. J. Appl. Phys. 53 (2014) 100204 |