Masahiro Mitani, Takahiko Endo, Shinzo Tsuboi, Takashi Okada, Genshiro Kawachi, and Masakiyo Matsumura |
Relationship between Thin-Film Transistor Characteristics and Crystallographic Orientation in Excimer-Laser-Processed Pseudo-Single-Crystal-Silicon Films
Masahiro Mitani, Takahiko Endo, Shinzo Tsuboi, Takashi Okada, Genshiro Kawachi, and Masakiyo Matsumura
Jpn. J. Appl. Phys. 49 (2010) 124001 |
Dae-Sung Lee, Osamu Sakai, and Kunihide Tachibana |
Microplasma-Induced Deformation of an Anomalous Response Spectrum of Electromagnetic Waves Propagating along Periodically Perforated Metal Plates
Dae-Sung Lee, Osamu Sakai, and Kunihide Tachibana
Jpn. J. Appl. Phys. 48 (2009) 062004 |
Daiyu Kondo, Shintaro Sato, Katsunori Yagi, Naoki Harada, Motonobu Sato, Mizuhisa Nihei, and Naoki Yokoyama |
Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes
Daiyu Kondo1,2,3, Shintaro Sato1,2,3, Katsunori Yagi1, Naoki Harada1, Motonobu Sato1,2,3, Mizuhisa Nihei1,2,3, and Naoki Yokoyama1
Appl. Phys. Express 3 (2010) 025102 |
Scott D. Findlay, Tomohiro Saito, Naoya Shibata, Yukio Sato, Junko Matsuda, Kohta Asano, Etsuo Akiba, Tsukasa Hirayama, and Yuichi Ikuhara |
Direct Imaging of Hydrogen within a Crystalline Environment
Scott D. Findlay1, Tomohiro Saito2, Naoya Shibata1,3, Yukio Sato1, Junko Matsuda4, Kohta Asano4, Etsuo Akiba4, Tsukasa Hirayama2, and Yuichi Ikuhara1,2,5
Appl. Phys. Express 3 (2010) 116603 |
Kosuke Nagashio, Tomonori Nishimura, Koji Kita, and Akira Toriumi |
Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor
Kosuke Nagashio, Tomonori Nishimura, Koji Kita, and Akira Toriumi
Jpn. J. Appl. Phys. 49 (2010) 051304 |
Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono |
Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates
Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono
Jpn. J. Appl. Phys. 49 (2010) 056203 |