Symposium

Growth of In-rich InGaN and its application

15．Crystal Engineering

September 11th　9:30〜17:45　　Room：H10

11a-H10 - 1〜2

    ENGLISH SESSION

  • 1Introductory Talk on In-rich InGaN（90分）Nagoya Univ., ARC ○Hiroshi Amano
  •  Break　11:00〜11:15
  • 2Improved Crystal quality of a-plane GaN on r-plane sapphire by controlled integration of silica nano-spheres（30 min.）SNU1，HU2，SU3 Sung Hyun Park1，Jinsub Park2，Kisu Joo1，Duck-Jae You1，Daeyoung Moon1，Jeonghwan Jang1，Dong-Uk Kim1，Hojun Chang3，Seunghyun Moon3，○Euijoon Yoon1，Yoon-Kyu Song1，Heonsu Jeon1，Jimmy Xu1，Yasushi Nanishi1
  •  Lunch　11:45〜13:00

11p-H10 - 1〜15

  • 1Growth of InN and In-rich InGaN and those applications -Introductory Talk- (15 min.）SNU, WCU, MSE1，Ritsumeikan. R-GIRO2 ○Yasushi Nanishi1,2
  • 2Molecular beam epitaxy of InN and InN:Mg layers（30 min.）Peking Univ.1，Chiba Univ.2 ○Xinqiang Wang1，Shitao Liu1，Nan Ma1，Bo Shen1，Yoshihiro Ishitani2，Akihiko Yoshikawa2
  • 3Improvement of crystalline and optical properties of InN grown on nitrided (0001) sapphire with high NH3 input partial pressures by HVPETokyo Univ. of Agri. & Tech.1，Linköping Univ.2 ○Rie Togashi1，Sho Yamamoto1，Fredrik Karlsson2，Hisashi Murakami1，Yoshinao Kumagai1，Per-Olof Holtz2，Akinori Koukitu1
  • 4Current Status of InN Growth by Pressurized-Reactor MOVPEIMR, Tohoku Univ. ○Takashi Matsuoka，Takeshi Kimura，Yuhuai Liu，Ryuji Katayama
  •  Break　14:15〜14:30
  • 5Carrier scattering processes in p and n type InN films by infrared spectroscopyGraduate School of Electric and Electronic Engineering, Chiba Univ.1，Center of SMART Green Innovation Research, Chiba Univ.2，School of Physics, Peking Univ.3 ○（DC）Masayuki Fujiwara1，Yoshihiro Ishitani1，Xinqiang Wang3，Daichi Imai1，Kazuhide Kusakabe2，Akihiko Yoshikawa2
  • 6Characteristics of carrier recombination processes in n-type and p-type InN films analyzed by infrared spectroscopyChiba Univ.1，Chiba Univ. SMART2，Peking Univ.3 ○Daichi Imai1，Yoshihiro Ishitani1，Xinqiang Wang3，Kazuhide Kusakabe2，Akihiko Yoshikawa2
  • 7Angled-resolved X-ray photoelectron spectroscopy of c-plane InN grown by RF-MBEKogakuin Univ.1，Ritsumeikan Univ.2，Seoul National Univ. WCU3 ○（M1）Ryosuke Amiya1，Tomohiro Yamaguchi1,2，Daiki Tajimi1，Yohei Sugiura1，Tsutomu Araki2，Yasushi Nanishi2,3，Tohru Honda1
  • 8Near infrared InGaN-based nanocolumn LEDs（30 min.）Sophia University1，Sophia Nanotech. Research Center2 ○Katsumi Kishino1,2
  •  Break　15:45〜16:00
  • 9Optical devices with high In concentration InGaN prepared by pulsed sputteringUniv. of Tokyo1，JST-CREST2 ○Hiroshi Fujioka1,2，Kazuki Morita1，Kazuya Tamura1，Atsushi Kobayashi1，Shigeru Inoue1，Jistuo Ohta1
  • 10Growth of InGaN-based heterostructures using DERI by RF-MBERitsumeikan Univ.1，Kogakuin Univ.2，Seoul National Univ.3 ○Tsutomu Araki1，Nao Uematsu1，Junichi Sakaguchi1，Ke Wang1，Tomohiro Yamaguchi2,1，Euijoon Yoon3，Yasushi Nanishi1,3
  • 11P-type InGaN across the entire composition rangeRitsumeikan Univ.1，Ritsumeikan-GIRO2，Seoul National Univ.3，Lawrence Berkeley National Laboratory4 ○Ke Wang1，Takuro Katsuki1，Junichi Sakaguchi1，Tsutomu Araki1，Yasushi Nanishi2,3，Kin Man Yu4，Joel Ager III4，Wladek Walukiewicz4
  • 12MOVPE InGaN with intermediate In compositions grown on GaN/sapphire template and AlN/Si(111) substrateUniv. of Fukui1，JST-CREST2，Osaka City Univ.3 Akihiro Mihara1，Y.D. Zheng1,2，Daizo Hironaga1，Akihiro Hashimoto1，Naoteru Shigekawa3，○Akio Yamamoto1,2
  • 13Reaction model of InGaN growth by MOVPE on computational fluid simulationTokyo Univ. of Science ○Momoko Deura，Akira Hirako，Fumitaka Ichinohe，Yu Arai，Kazuhiro Ohkawa
  • 14Structural Control and Optical Properties of Coherent (InN)1/(GaN)n Short-Period Superlattices for SMART III-Nitride Solar CellsSMART-SC PJ, Chiba Univ.1，VBL, Chiba Univ.2，G-COE, Chiba Univ.3，JST-ALCA4，Kogakuin Univ.5 ○Kazuhide Kusakabe1,2,3,4，Akihiko Yoshikawa1,2,3,4,5
  • 15Towards "Device-Quality Epitaxy" of InN, In-rich InGaN, and Fine-Structure InN/InGaN/GaN Superlattices （15 min.）SMART-GIRC, Chiba Univ.1，Fac. Eng., Kogakuin Univ.2 ○Akihiko Yoshikawa1,2