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33rd JSAP AWARDS (Year 2011)

JSAP Paper Award

Award Recipients Masahiro Mitani, Takahiko Endo, Shinzo Tsuboi, Takashi Okada,Genshiro Kawachi, and Masakiyo Matsumura
Title of the Paper Relationship between Thin-Film Transistor Characteristics and Crystallographic Orientation in Excimer-Laser-Processed Pseudo-Single-Crystal-Silicon Films
Authours Masahiro Mitani, Takahiko Endo, Shinzo Tsuboi, Takashi Okada,Genshiro Kawachi, and Masakiyo Matsumura
Affiliation Advanced LCD Technologies Development Center Co., Ltd.
Journal Jpn. J. Appl. Phys. 49 (2010) 124001
Award Recipients Dae-Sung Lee, Osamu Sakai, and Kunihide Tachibana
Title of the Paper Microplasma-Induced Deformation of an Anomalous Response Spectrum of Electromagnetic Waves Propagating along Periodically Perforated Metal Plates
Authours Dae-Sung Lee, Osamu Sakai, and Kunihide Tachibana
Affiliation Kyoto University
Journal Jpn. J. Appl. Phys. 48 (2009) 062004
Award Recipients Daiyu Kondo, Shintaro Sato, Katsunori Yagi, Naoki Harada, Motonobu Sato, Mizuhisa Nihei, and Naoki Yokoyama
Title of the Paper Low-Temperature Synthesis of Graphene and Fabrication of Top-Gated Field Effect Transistors without Using Transfer Processes
Authours Daiyu Kondo1,2,3, Shintaro Sato1,2,3 , Katsunori Yagi1, Naoki Harada1,Motonobu Sato1,2,3, Mizuhisa Nihei1,2,3, and Naoki Yokoyama1
Affiliation 1 Fujitsu Laboratories Ltd., 2 Fujitsu Limited, 3 JST
Journal Appl. Phys. Express 3 (2010) 025102
Award Recipients Scott D. Findlay, Tomohiro Saito, Naoya Shibata, Yukio Sato, Junko Matsuda, Kohta Asano, Etsuo Akiba, Tsukasa Hirayama, and Yuichi Ikuhara
Title of the Paper Direct Imaging of Hydrogen within a Crystalline Environment
Authours Scott D. Findlay1, Tomohiro Saito2, Naoya Shibata1,3, Yukio Sato1, Junko Matsuda4,Kohta Asano4, Etsuo Akiba4, Tsukasa Hirayama2, and Yuichi Ikuhara1,2,5
Affiliation 1 The University of Tokyo, 2 Japan Fine Ceramics Center, 3 JST, 4 AIST,
5 Tohoku University
Journal Appl. Phys. Express 3 (2010) 116603
Award Recipients Kosuke Nagashio, Tomonori Nishimura, Koji Kita, and Akira Toriumi
Title of the Paper Systematic Investigation of the Intrinsic Channel Properties and Contact Resistance of Monolayer and Multilayer Graphene Field-Effect Transistor
Authours Kosuke Nagashio, Tomonori Nishimura, Koji Kita, and Akira Toriumi
Affiliation The University of Tokyo
Journal Jpn. J. Appl. Phys. 49 (2010) 051304
Award Recipients Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono
Title of the Paper Model for Bias Frequency Effects on Plasma-Damaged Layer Formation in Si Substrates
Authours Koji Eriguchi, Yoshinori Nakakubo, Asahiko Matsuda, Yoshinori Takao, and Kouichi Ono
Affiliation Kyoto University
Journal Jpn. J. Appl. Phys. 49 (2010) 056203

JSAP Young Scientist Award

Award Recipients Takashi Ando
Title of the Paper Low Threshold Voltage and High Mobility N-Channel Metal–Oxide–Semiconductor Field-Effect Transistor Using Hf–Si/HfO2 Gate Stack Fabricated by Gate-Last Process
Authours Takashi Ando, Tomoyuki Hirano, Kaori Tai, Shinpei Yamaguchi, Shinichi Yoshida, Hayato Iwamoto, Shingo Kadomura, and Heiji Watanabe
Affiliation Osaka University
Journal Jpn. J. Appl. Phys. 49 (2010) 016502
Award Recipients Shinsuke Yada
Title of the Paper Single-Crystalline Ferromagnetic Alloy Semiconductor Ge1-xMnx Grown on Ge(111)
Authours Shinsuke Yada, Ryohei Okazaki, Shinobu Ohya and Masaaki Tanaka
Affiliation The University of Tokyo
Journal Appl. Phys. Express 3 (2010) 123002
Award Recipients Gento Yamahata
Title of the Paper Control of Inter-Dot Electrostatic Coupling by a Side Gate in a Silicon Double Quantum Dot Operating at 4.5 K
Authours Gento Yamahata, Tetsuo Kodera, Hiroshi Mizuta, Ken Uchida, and Shunri Oda
Affiliation Tokyo Institute of Technology
Journal Appl. Phys. Express 2 (2009) 095002
Award Recipients Toru Hiyoshi
Title of the Paper Elimination of the Major Deep Levels in n- and p-Type 4H-SiC by Two-Step Thermal Treatment
Authours Toru Hiyoshi and Tsunenobu Kimoto
Affiliation Kyoto University
Journal Appl. Phys. Express 2 (2009) 091101
Award Recipients Hirokazu Masai
Title of the Paper High Photoluminescent Property of Low-Melting Sn-Doped Phosphate Glass
Authours Hirokazu Masai, Yoshihiro Takahashi, Takumi Fujiwara, Syuji Matsumoto, and Toshinobu Yoko
Affiliation Tohoku University
Journal Appl. Phys. Express 3 (2010) 082102
Award Recipients Kosuke Kakuyanagi
Title of the Paper Generation of Non-Classical Microwave Photon States in an Inductor–Capacitor Resonator Coupled to a Superconducting Flux Qubit
Authours Kosuke Kakuyanagi, Seiichiro Kagei, Shiro Saito, Hayato Nakano, and Kouichi Semba
Affiliation NTT Basic Research Laboratories, NTT Corporation
Journal Appl. Phys. Express 3 (2010) 103101
Award Recipients Takayoshi Katase
Title of the Paper High Critical Current Density 4MA/cm2 in Co-Doped BaFe2As2 Epitaxial Films Grown on (La,Sr)(Al,Ta)O3 Substrates without Buffer Layers
Authours Takayoshi Katase, Hidenori Hiramatsu, Toshio Kamiya, and Hideo Hosono
Affiliation Materials and Structures Laboratory,Tokyo Institute of Technology
Journal Appl. Phys. Express 3 (2010) 063101
Award Recipients Jun-ichi Inoue
Title of the Paper Self Contact Organic Transistors
Authours Jun-ichi Inoue, Hiroshi Wada, and Takehiko Mori
Affiliation Tokyo Institute of Technology
Journal Jpn. J. Appl. Phys. 49 (2010) 071605

Award for Best Review Paper

Award Recipients Yoshihiko Takano
Title of the Paper Crystal Structure and Physical Properties of Newly Discovered Iron-Based Superconductors
Authours Yoshihiko Takano
Affiliation NIMS
Journal OYO BUTURI 79 (2010) pp. 20-24
Award Recipients Hiromasa Ito
Title of the Paper Terahertz-Wave Sources : the Frequency Gap between Lasers and Masers
Authours Hiromasa Ito
Affiliation RIKEN
Journal OYO BUTURI 79 (2010) pp. 524-529