| 9 Applied Material Science |
| 9.1 Dielectric Materials |
| March 18 13:30`18:00 |
| 18p-ZC - 1`17 |
| 1 | Fabrication of atomically flat Pt layer on sapphire substrate for PbTiO3 nanocrystal growth | NAIST 1,CREST 2@*Kenshiro Asahi 1, Takashi Nishida 1, Masahiro Horita 1, Mutsunori Uenuma 1,2, Kiyoshi Uchiyama 1, Yukiharu Uraoka 1,2 |
| ’ | 2 | Large power density vibration energy harvesting
using highly (001)-oriented PZT thin film on Si | Panasonic Corp.@Takakiyo Harigai 1, Yoshiaki Tanaka 1, Michihito Ueda 1, Hideaki Adachi 1, Eiji Fujii 1 |
| ’ | 3 | Measurement of Losses in Shear Mode of Piezoelectric Ceramics | Tokyo Tech.@*Manabu Hagiwara 1, Seita Takahashi 1, Takuya Hoshina 1, Hiroaki Takeda 1, Takaaki Tsurumi 1 |
| 4 | Crystal Structures and Ferroelectric and Piezoelectric Properties of BaTiO3 Synthesized by Liquid Phase Reactions | Tokyo Univ. of Science@*Misato Tashiro 1,Naoto Kitamura 1,Yasushi Idemoto 1 |
| 5 | Fabrication and Characterization of Tunable Device using BST Thin Films on Ώ-Al2O3? | NAIST 1, CREST 2@*Onodera Ryo 1,Nishida Takashi 1,Horita Masahiro 1,Uenuma Mutunori 1,Uchiyama Kiyoshi 1,Uraoka Yukiharu 1,2 |
| ’ | 6 | Analysis of Polarization Behavior in Relaxor BaZrxTi1-xO3 Ceramics by
Wideband Dielectric Spectroscopy | Tokyo Inst. of Tech. 1@*Teranishi Takashi 1, Hoshina Takuya 1, Takeda Hiroaki 1, Tsurumi Takaaki 1
|
| 7 | Electrical Properties of BaTa2O6 Thin Films Annealed in O2 Atmosphere | NAIST 1, CREST 2@Ro Li 1, Echizen Masahiro 1, Nishida Takashi 1, Uchiyama Kiyoshi 1, Uraoka Yukiharu 1 2 |
| 8 | Analysis of Electrical Properties of Pt/SrTiO3:Nb Junctions | National Institute for Materials Science@*Li Jianyong 1, Ohashi Naoki 1, Okushi Hideyo 1, Haneda Hajime 1 |
| | | Break 15:30`15:45 | |
| 9 | Fabrication and Electric characteristics of Y-doped SrZrO3 thin films deposited by spin-coat technique | NAIST@1, CREST@2@Isse Yuri 1,Uchiyama Kiyoshi 1,Nishida Takashi 1,Uraoka Yukiharu 1, 2 |
| 10 | Raman Scattering study of proton conductor K3H(SO4)2 | School of Science and Engineering, Kinki Univ..@Matsumoto@Yoshiyuki 1,Shimada Kentarou 1
|
| 11 | Consideration of the structural phase transition of SbSBr by first principle calculation | Dept. Electronics, Tokai Univ.@Yuichi Ota, Takahiro Abe and Takashi Inushima |
| 12 | Application of the mechanism of the ozonization of oxygen induced using pyroelectricity of LiTaO3 | Doshisha Univ. 1, JSPS 2, Kyoto Univ. 3, JOHNAN Co. Ltd. 4@*Yoshikazu Nakanishi 1, Shinji Fukao 1,2, Junko Ide 3, Katsumi Handa 3, Masayoshi Matsushima 4, Yukio Kotera 4, Yuuki Sato 1, Yoshiaki Ito 3, Shinzo Yoshikado 1 |
| ’ | 13 | Origin of Photochromism Induced in LaAlO3 by UV Irradiation. | Waseda Univ. 1@*Tamagawa Kenta 1, Hirata Eiji 1, Ohki Yoshimichi 1
|
| 14 | Structure and dielectric properties of tungsten-bronze type Ba2NaNb5xTa5(1-x)O15 ceramics | Hyogo Prefectural Inst. of Tech. 1, Japan Science and Tec. Agency 2, Univ. of Hyogo 3@*Fukuzumi Masafumi 1, Saiki Tsunemasa 1, Higuchi Kouhei 2, Maenaka Kazusuke 3, Yoshioka Hideki 1 |
| 15 | Poling Treatment and Electrical Properties of (Li,Na)NbO3 Lead-Free Piezoelectric Ceramics | Nagoya Inst of Tech. 1@*Ohashi Takayuki 1,Aoyagi Rintaro 1,Maeda Masaki 1, Iwata Makoto 1 |
| ’ | 16 | Growth and Characterization of Bi-based Ferroelectric Single Crystals by Top-Seeded Solution Growth Method under High-Pressure Oxygen Atmosphere | RCAST, The Univ. of Tokyo 1@*Yuuki Kitanaka 1, Hiroaki Onozuka 1, Akifumi Morishita 1, Yuji Noguchi 1, Masaru Miyayama 1 |
| ’ | 17 | Piezoelectric Properties of Textured (Bi1/2K1/2)TiO3 Ceramics | Tokyo University of Science 1@*Saito Masahiro 1, Hiruma Yuji 1, Nagata Hajime 1, Takenaka Tadashi 1 |
| 9.2 Fine Particles and Powders |
| March 20 13:00`14:15 |
| 20p-ZC - 1`5 |
| £ | 1 | Photovoltaic Applications of Self-assembled Silicon Nanocrystals Synthesized by Laser Induced Fragmentation Method | 1Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Umezono 1-1-1, Tsukuba, 305-8568, JAPAN, 2Nanotechnology and Integrated BioEngineering Centre (NIBEC), University of Ulster at Jordanstown, BT37 0QB, Northern Ireland, UK@Svrcek Vladimir1, Shibata Yosei1, Marrioti Davide2, Kondo Michio1 |
| 2 | Basic Characteristics of Passing-Type Faraday Cage(II) | Kasuga Denki Inc. 1,JNIOSH 2,Ibaraki Univ. 3@*Nishida Hideki 1,Choi Kwang-Seok 2,Mogami Tomofumi 3,Suzuki Teruo 1 |
| 3 | Characteristic of Electrostatic Charge for Powder in Fluidization Beds | National Inst. of Occupational Safety and Health 1@Kwangseok CHOI 1 |
| 4 | Charged Particle Generation Characteristic of Corona Discharge Ionizer in N2 Atmosphere | The University of Industrial Technology@*Yoshioka Masaki 1,Yudi Kristanto 1,Okano Kazuo 1 |
| 5 | Neutralization System with Ceramics Transformer | The University of Industrial Technology@*Yamamoto Taiki 1,Yudi Kristanto 1,Okano Kazuo 1 |
| 9.3 Nano electronics |
| March 19 |
| 19a-P10 - 1`23 |
| |
19a-P10 - 1`23@Poster Session 9:30`11:30 |
| 1 | Temperature dependence of electromigration at gold nanojunctions in the diffusive regime
| IIS Univ. of Tokyo 1, CREST-JST 2, INQIE Univ. of Tokyo 3@*Umeno Akinori, Yoshida Kenji, Sakata Shuichi, Hirakawa Kazuhiko |
| 2 | Transition of conduction characteristics during the narrowing process of nanometer-scale gap between metallic electrodes | Dept. of Electronic Sci. & Eng.,Kyoto Univ. 1,Innovative Collaboration Center, Kyoto Univ. 2,AIST 3@*Mizukami Takahiro 1,Ishida Daiki 1,Han Jiwon 1,Miyato Yuji 1,Kobayashi Kei 2,Yamada Hirofumi 1,Matsushige Kazumi 1,Shimizu Tetsuo 3,Naitoh Yasuhisa 3 |
| 3 | Fabrication of sub-10 nm-gap electrodes using EB lithography toward AFM imaging | Kyoto Univ. 1, Innovative Collaboration Center, Kyoto Univ. 2@*Han Jiwon 1, Mizukami Takahiro 1, Miyato Yuji 1, Kobayashi Kei 2, Matsushige Kazumi 1, Yamada Hirofumi 1 |
| ’ | 4 | Investigation of Electromigration Process of Nickel Nanochannel
Using Stepwise Feedback-Controlled Electromigration
| Tokyo Univ. of Agr. & Tech. 1@*Yasutake Ryu-taro 1, Tomoda Yusuke 1, Itami So-ichiro 1, Watari Kume 1, Ibuki Atsumo 1, Shirakashi Jun-ichi 1 |
| ’ | 5 | Study on Progress of Resistance Control of Metal Nanochannels
Using Stepwise Feedback-Controlled Electromigration | Tokyo Univ. of Agri. & Tech. 1@*Atsumo Ibuki, Tomoda Yusuke, Itami So-ichiro, Yasutake Ryu-taro, Shirakashi Jun-ichi |
| ’ | 6 | Magnetoresistance Properties of Ni Nanochannel Controlled by Stepwise Feedback-Controlled Electromigration | Tokyo Univ. of Agr. & Tech. 1@*Itami So-ichiro 1,Tomoda Yusuke 1,Yasutake Ryu-taro 1, Atsumo Ibuki 1 and Shirakashi Jun-ichi 1 |
| 7 | Study on Electromigration Process of ?m-Scale Metal Wires Using In-Situ Optical Microscope Observation | Tokyo Univ. of Agr. & Tech. 1@*Kuwabara Yosuke 1, Nishimura Shinya 1, Itami So-ichiro 1, Furusawa Ami 1, Shirakashi Jun-ichi 1 |
| ’ | 8 | In-Situ Temperature Measurements of Current Heating Process in Metal Wires Using Near-Infrared CCD | Tokyo Univ. of Agr. & Tech. 1@*Kuwabara Yosuke 1, Nishimura Shinya 1, Itami So-ichiro 1, Furusawa Ami 1, Shirakashi Jun-ichi 1 |
| ’ | 9 | Control of Resistances by Field-Emission-Induced Electromigration
Using Current Source Mode | Tokyo Univ. of Agr. & Tech. 1@*Takiya Kazutoshi 1, Tomoda Yusuke 1, Kume Watari 1, Ueno Shunsuke 1, Hanada Michinobu 1, Watanabe Takato 1, Shirakashi Jun-ichi 1 |
| ’ | 10 | Control of Electrical Properties of Passivated Nanogaps Using Field-Emission-Induced Electromigration | Tokyo Univ. of Agr. & Tech. 1@*Hanada Michinobu 1, Tomoda Yusuke 1, Kume Watari 1, Ueno Shunsuke 1, Takiya Kazutoshi 1, Shirakashi Jun-ichi 1 |
| ’ | 11 | Simple and Easy Control of Electrical Properties of Single-Electron Transistors Using Field-Emission-Induced Electromigration | Tokyo Univ. of Agr. & Tech. 1@*Kume Watari 1, Tomoda Yusuke 1, Hanada Michinobu 1, Ueno Shunsuke 1, Takiya Kazutoshi 1, Shirakashi Jun-ichi 1 |
| ’ | 12 | Integration of Single-Electron Transistors Using Field-Emission-Induced Electromigration | Tokyo Univ. of Agr. & Tech. 1@*Ueno Shunsuke 1, Tomoda Yusuke 1, Kume Watari 1, Takiya Kazutoshi 1, Hanada Michinobu 1, Shirakashi Jun-ichi 1 |
| 13 | Fabrication and Evaluation of metalic nanowire arrays using porous alumina template | Kansai Univ. 1@Sakata Tomohiro 1,Mishima Hirosi 1,Ishida Yasuharu 1,Aoki Kazumo 1,Shingubara shoso 1 |
| 14 | WSi2 particle deposition and Si Whisker Growth by using tungsten hot filament | Tokyo National College of Technol.@1, NTNU@2, SINTEF@3@WSi2 particle deposition and Si Whisker Growth by using tungsten hot filament |
| 15 | Evaluation of MgO thin films fabricated by metal organic decomposition method | KCCT. 1,RIKEN KEIKI 2,Ryukoku Univ. 3,@*Inoue Kenta 1,Nakajima Yoshiyuki 2,Yamamoto Shinichi 3 |
| ’ | 16 | Crystal growth of metal oxide films by coating pyrolysis process | Ryukoku Univ 1,Hyogo Pref.Inst.of Tech 2,KCCT 3,@Ohasi Yosinobu 1,Yosioka Hideki 2,Inoue Kenta 3,Nisi Takao 3,Nisida Masayuki 3,Yamamoto Sin-ichi 1, |
| 17 | Impurity Induced Mesostructures of Sb-doped SnOSnO2 Nanowires | Osaka Univ. 1, JST PRESTO 2@Klamchuen Annop 1, *Yanagida Takeshi 1,2, Kanai Masaki 1, Nagashima Kazuki 1, Oka Keisuke 1, Kawai Tomoji 1 |
| ’ | 18 | Non-volatile Resistive Switching Memory Effects on NiO Nanowire Structures | ISIR Osaka Univ. 1, JST PRESTO 2, Konkuk Univ. 3@*Keisuke Oka1, Takeshi Yanagida1,2, Kazuki Nagashima1, Annop Klamchuen1, Masateru Taniguchi1,2, Tomoji Kawai1,3, Jin-Soo Kim3, Bae Ho Park3 |
| ’ | 19 | Resistive Switching Characteristics of Cobalt Oxide Nanowires and Their Mechanisms | Osaka Univ. 1, JST PRESTO 2, Konkuk Univ. 3@*Kazuki Nagashima 1, Takeshi Yanagida 1,2, Keisuke Oka 1, Annop Klamuchuen 1, Masateru Taniguchi 1,2, Tomoji Kawai 1,3, Jin-Soo Kim 3, Bae Ho Park 3 |
| 20 | Structural Dependence of Negative Differential Resistance of In-Plane Gate Devices | Waseda Univ. 1, NTT BRL 2@*Komatsuzaki Yuji 1, Higashi Kazuhiro 1, Kyougoku Tomoteru 1, Onomitsu Kouji 2, Horikoshi Yoshiji 1 |
| 21 | Analysis on Nonlinear Characteristic in Gate-controlled Three-branch GaAs Nanowire Junction Devices | Grad. School of Info. Sci. Tech. and RCIQE, Hokkaido Univ. 1, PREST, JST 2@*Daisuke Nakata 1, Hiromu Shibata 1, Yuta Shiratori 1, Seiya Kasai 1,2 |
| 22 | Fabrication of flip-flop circuits integrating gate-controlled GaAs three-branch nanowire junction devices
| RCIQE, Hokkaido Univ. 1, PRESET, JST. 2@*Shibata Hiromu 1, Nakata Daisuke 1, Shiratori Yuta 1, Kasai Seiya 1,2 |
| 23 | Reconfigurable BDD Logic Circuit using GaAs Nanowire Network with 2D hypercube topology | Grad. School of Info. Sci. Tech. and RCIQE, Hokkaido Univ. 1, PRESTO JST 2@*Shiratori Yuta 1, Miura Kensuke 1, Kasai Seiya 1 2 |
| 9.3 Nano electronics |
| March 20 |
| 20a-P14 - 1`23 |
| |
20a-P14 - 1`23@Poster Session 9:30`11:30 |
| 1 | Noise Characteristics of GaAs Nanowire Fabricated by Wet Etching | Grad. School of Info. Sci. Tech. 1,PRESTO JST 2@*Miura Kensuke 1,Shiratori Yuta 1,Kasai Seiya 1 2 |
| 2 | Single-electron counting statistics of shot noise in nanowire Si MOSFETs | NTT Basic Research Labs. 1@Nishiguchi Katsuhiko 1, Ono Yukinori 1, Fujiwara Akira 1 |
| 3 | Stochastic Resonance in GaAs-based Nanowire FETs and Its Adaptability | Hokkaido Univ. 1, PRESTO JST 2@*Kasai Seiya 1,2, Shiratori Yuta 1, Miura Kensuke 1 |
| ’ | 4 | Stochastic Resonance Device Based on Carbon Nanotube Field-Effect Transistors | ISIR, Osaka Univ. 1, RCIQE, Hokkaido Univ. 2@*Hakamata Yasufumi 1, Ohno Yasuhide 1, Maehashi Kenzo 1, Inoue Koichi 1, Matsumoto Kazuhiko 1, Kasai Seiya 2 |
| 5 | Stochastic resonance using a bi-stable potential between metallic and insulating states in VO2 thin | Osaka Univ.1, Gunma Univ.2@*Teruo Kanki 1, Yasushi Hotta 1, Naoki Asakawa 2, Tomoji Kawai 1, Hidekazu Tanaka 1 |
| 6 | Real-time detection of audio signal using a summing network of parallel stochastic resonant units | Osaka Univ. 1, Gunma Univ. 2@*Hotta Yasushi 1, Kanki Teruo 1, Asakawa Naoki 2, Kawai Tomoji 1 |
| 7 | Two-Dimensional Information-Processing Devices Constructed by
Noise-Redundant Single-Electron Circuits | Yokohama National University,@*Kurotaki Dai 1, Oya Takahide 1 |
| 8 | Study of Novel Single-Electron Majority-Logic Units with Thermal-Noise Redundancy | Yokohama National Univ. 1@*Oya Takahide 1 |
| 9 | The analysis of the triple-dot single electron devices with inhomogeneous junction capacitances (1) | Ritsumeikan Univ. 1@*Ohyama Teruaki 1,Ohue Suguru 1,Imai Shigeru 1 |
| 10 | The Analysis of Triple-Dot Single Electron Devices with Inhomogeneous Junction Capacitances (2) | Ritsumeikan Univ. 1@*Ooue Suguru 1, Teruaki Ooyama 1,Shigeru Imai 1 |
| 11 | Analysis of triple dot single electron device with inhomogeneous gate capacitance | Ritsumeikan Univ. 1@*Moriyasu Rui 1,Moriguchi Shinichi 1,Imai Shigeru 1 |
| 12 | Analysis for operation of common-gated quadruple-dot single electron devices | Ritsumeikan Univ. 1@*Ito Masato 1,Imai Shigeru 1 |
| ’ | 13 | Electron-phonon interaction in suspended Si double quantum dots | QNERC, Tokyo Tech 1, HCL 2, ECS, Southampton Univ. 3, Dept. of Physical Electronics, Tokyo Tech 4, SORST-JST 5@*J. Ogi 1,5, T. Ferrus 2, T. Kodera 1, Y. Tsuchiya 3,5, K. Uchida 4,5, D. A. Williams 2, H. Mizuta 3,4,5, S. Oda 1,5 |
| 14 | Quantum State transfer from a time-bin encoded photon qubit to an electron spin qubit | SNCT 1, AIST 2, Tohoku Univ. 3@*Rikitake Yoshiaki 1, Imamura Hiroshi 2, Kosaka Hideo 3 |
| 15 | Voltage Pulse Optimization for Resistance Switching in a Nanogap | NRI-AIST1, FEAT2@Kumaragurubaran Somu1, Tetsuo Shimizu1, Hiroshi Suga1, Yasuhisa Naitoh1, Tsuyoshi Takahashi2, Yuichiro Masuda2, Toru Sumiya2, Sigeo Furuta2, Masatoshi Ono2 |
| ’ | 16 | Low Power Operation of Nanogap Switch Effect using Oxygen Gas Environment | NRI-AIST 1@*Hiroshi Suga 1, Masayo Horikawa 1, Tetsuo Shimizu 1, Yasuhisa Naitoh 1 |
| 17 | Considerations of Mechanism of Resistance Switching using Nanogap Junctions | NRI AIST 1, PRESTO JST 2@*Naitoh Yasuhisa 1,2, Suga Hiroshi 1, Horikawa Masayo 1, Shimizu Tetsuo 1 |
| ’ | 18 | Fabrication of nanogap electrodes using metal oxidation and application to CNT devices | ISIR Osaka Univ. 1@*Satoshi Okuda 1,Takaomi Kishimoto 1, Takahiro Ohori 1, Yasuhide Ohno 1, Kenzo Maehashi 1, Koichi Inoue 1, Kazuhiko Matsumoto 1 |
| 19 | Fabrication of Single Wall Carbon Nanotube Field Effect Transistors by Dip-Pen Nanolithography | AIST PRI1, AIST NTRC 2, AIST NTI3@*Tong Wang1CSaid Kazaoui2@Yoshiki Shimizu3CHirobumi Ushijima1 |
| ’ | 20 | Reliable Fabrication of single electron transistor based on a self-assembled InAs quantum dot by using AFM local oxidation | IIS, Univ. of Tokyo 1, INQIE, Univ. of Tokyo 2, CREST-JST 3, RCAST, Univ. of Tokyo 4@*Hiroyuki Kobayashi 1, Rai Moriya 1, Kenji Shibata 1, Satoru Masubuchi 1, Kazuhiko Hirakawa 1,2,3, Satomi Ishida 4, Yasuhiko Arakawa 1,2, Tomoki Machida 1,2,3 |
| 21 | Electronic Transport Properties of Single Electron Transistor Using Nb Nanogap Electrode Which Was Fabricated by Molecular Ruler Technique and Electron Beam Lithography | Advanced Device Laboratory, RIKEN 1, Chiba Univ., Advanced Integration Science 2, Inst. for Molecular Science 3, Kyusyu Univ., Dep. of Appl. Chem. 4
@*Takayuki Nishino 1,2, Ryota Negishi 1, Masahiro Kawao 3, Hiroaki Ozawa 4, Koji Ishibashi 1,2 |
| 22 | Tunneling Resistance of Double Barrier Tunneling Junction with Pi-Conjugated Ligand Protected AuNPs | Tokyo Institute of Technology 1, Tsukuba University 2, CREST-JST 3@*Yoshihiro Minagawa 1,3, Shinya Kano 1,3, Yasuo Azuma 1,3, Masayuki Kanehara 1,2 Toshiharu Teranishi 2,3, Yutaka Majima 1,3 |
| 23 | Electrical Characterization in Porphyrin Molecule
by Scanning Tunneling Microscopy | Tokyo Tech1, Tsukuba Univ.2, Nagoya Univ.3, CREST-JST4@Shinya Kano1.4, Yoshihiro Minagawa1.4, Yasuo Azuma1.4, Daisuke Tanaka2.4, Masayuki Kanehara2.4, Toshiharu Teranishi2.4, Yasuyuki Yamada3.4, Kentaro Tanaka3.4 and Yutaka Majima1.4 |
| 9.4 Thermoelectric Energy Conversion |
| March 19 9:30`18:15 |
| 19a-ZC - 1`11 |
| 1 | Anisotropic thermoelectric properties of pseudo-one-dimensional SrNbO3.4 | Waseda Univ. 1, WIAS Waseda Univ. 2, JST-PRESTO 3, Helsinki Univ. Technol. 4@Hayashi Yoichiro 1, *Kobayashi Wataru 2,3, Terasaki Ichiro 1, Yamauchi Hisao 4, Karppinen Maarit 4 |
| 2 | Effect of HIP Treatment on Thermoelectric Properties of ZnO | Univ. of Hyogo 1,Metal Technology Co., Ltd. 2@*Nosho Yusuke 1,Nakagawa Kazuhiko 1,Kita Shinya 1,Onoi Masahiro 2,Mori Hidenobu 1,Yoshida Haruhiko 1 |
| 3 | Thermoelectric Properties of ZnO:Al co-doped with Sm, Ni and Fe | Akita Prefectural Univ.1,Akita Resarch and Development Center 2@*Manabu Oda 1,Yasunori Chonan 1, Takao Komiyama 1, Hiroyuki Yamaguchi 1,
Takashi Aoyama 1,Sigeaki Sugiyama 2
|
| 4 | The thermal properties of the perovskite-type oxides with A- and B-site substitution | Kyushu Univ.@*Sugahara Tohru 1, Ohtaki Michitaka 1 |
| ’ | 5 | Thermoelectric properties of delafossite-type CuFe0.5-xCr0.5MgxO2 solid solution | Grad. Sch. Eng., Tohoku Univ. 1@*Tomohiro Nozaki 1, Kei Hayashi 1, Yuzuru Miyazaki 1, Tsuyoshi Kajitani 1 |
| | | Break 10:45`11:00 | |
| 6 | Layered cobalt oxide LixCoO2 (3): electrical resistivity measurements | Hokkaido Univ. 1, MSL,TokyoTech. 2, Helsinki Univ. of Tech. 3@* Yuta Sugimoto 1, Teruki Motohashi 1, Yuji Masubuchi 1, Takao Sasagawa 2, Hisao Yamauchi 2,3, Shinichi Kikkawa 1 |
| 7 | Layered cobalt oxide LixCoO2 (4): thermoelectric properties and electronic structure | Hokkaido Univ. 1, MSL, Tokyo Tech 2, Helsinki Univ. of Tech. 3@*Motohashi Teruki 1, Sugimoto Yuta 1, Masubuchi Yuji 1, Sasagawa Takao 2, Yamauchi Hisao 2,3, Kikkawa Shinichi 1 |
| 8 | Effect of cation-ordering on thermoelectric properties in layered cobaltates
AxCoO2 (A = Na, Ca, Sr, Ba) | Tohoku Univ. 1, IMR 2, JAEA 3@Igarashi Dai 1, *Miyazaki Yuzuru 1, Yubuta Kunio 2, Igawa Naoki 3, Kajitani Tsuyoshi 1 |
| 9 | Sintering Temperature Dependence of Thermoelectric Properties in
Calcium Cobalt Oxides | Univ. of Hyogo 1@Kita Shinya 1,Nosho Yusuke 1,Nakagawa Kazuhiko 1,Mori Hidenobu 1,Yoshida Haruhiko 1 |
| 10 | Thermoelectric properties of Ca2.7
Bi0.3Co4OΒ film fabricated by aerosol deposition method | Toyohashi Univ.of Tech.1,@*Hamasaki Kyohei 1,Chung Kwanghyun 1,Inoue Mitsuteru 1,Nakamura Yuichi 1 |
| 11 | Thermoelectric power generation for oxide/Bi2Te3 cascaded thermoelectric modules | AIST 1,JST CREST 2@Funahashi Ryoji 1,2,Urata Saori 1,Urata Tomoyuki 2,Iwasaki Kanako 1,Matsumura Yoko 1,Kosuga Atsuko 1 |
| | | Lunch 12:30`13:30 | |
| 19p-ZC - 1`17 |
| 1 | Densification of the n-type counterpart to boron carbide | NIMS 1@*Mori Takao 1, Nishimura Toshiyuki 1, Berthebaud David 1 |
| 2 | Effect of 3d transition metal doping on low temperature thermoelectric materials Bi0.88Sb0.12 ? | School of Materials Science JAIST 1@*Kito Daich 1,Sakai Kengo 1,Ariga Tomoki 1,Koyano Mikio 1 |
| 3 | Preparation of Bulk ΐ-FeSi2 Using a Na and the Thermoelectric Properties | IMRAM Tohoku Univ. 1@*Yamada Takahiro 1, Kariya Eri 1, Morito Haruhiko 1, Yamane Hisanori 1 |
| 4 | Characterization of Crystal Structure and Thermoelectric Properties of
Ba8-xEuxGa16Si30 Clathrate Compounds | Tokyo Univ. of Science, Yamaguchi 1, JST, CREST 2@*Nakabayashi Takahiro 1,Hokazono Masahiro 1,Anno Hiroaki 1,2 |
| 5 | Annealing temperature dependence of the crystallization of SiGeAu thin film | Dept. of MSE, Natl. Def. Acad. 1@Hiroaki Takiguchi 1, Kazuto Fukui 1, Yoichi Okamoto 1, Hisashi Miyazaki 1, Jun Morimoto 1 |
| ’ | 6 | Low dimensional carrier effects on thermoelectric properties of epitaxial Si/SiGeB multi-layered films | Grad. School of Natural Sci. Tech., Kanazawa Univ. 1@Matoba Akinari 1, Sasaki Kimihiro 1 |
| | | Break 15:00`15:15 | |
| 7 | Influence of Heavy Doping on Seebeck Coefficient in SOI Layers | Shizuoka Univ. 1@*Ikeda Hiroya 1, Salleh Faiz 1 |
| 8 | Thermoelectrical Properties of SnEuTe and SnSrTe films | Faculty of Engineering 1, Graduate School of Engineering 2, Shizuoka Univ.@ *Ishida Akihiro 1, Tsuchiya Takuro 2, Yamada Tomohiro 2 |
| 9 | Seebeck Effect of Semiconductors and Quantum Structures | Faculty of Engineering, Shizuoka Univ. 1@*Ishida Akihiro 1 |
| 10 | Measurement of thermoelectric efficiency of small size samples by point contact method? | School of Materials Science JAIST 1@*Hatayama Kenji 1, Ariga Tomoki, Koyano Mikio 1 |
| 11 | Surface analysis in the micro area of thermoelectric materials by Raman microspectroscopy | School of Materials Science JAIST 1@*Genko Takahiro 1, Tanaka Junnya 1, Ariga Tomoki 1, Koyano Mikio 1 |
| 12 | Observation of 3D distribution of Seebeck coefficient by thermal probe method | AIST 1@*Yamamoto Atsushi 1 |
| | | Break 16:45`17:00 | |
| 13 | Numerical analysis of effective mass dependence of transport properties in Bi nanowire | Ibaraki Univ. 1, Saitama Univ. 2@*Yuki Ichige 1, Tsuyoshi Matsumoto 1, Masahiro Ikeya 1, Takashi Komine 1,
Ryuji Sugita 1, Tomosuke Aono 1, Masayuki Murata 2, Daiki Nakamura 2,
Yasuhiro Hasegawa 2 |
| 14 | Numerical study of effect of surface potential on transport properties in Bi nanowires | Ibaraki Univ. 1, Saitama Univ. 2@*Tsuyoshi Matsumoto 1, Yuki Ichige 1, Masahiro Ikeya 1, Takashi Komine 1, Ryuji Sugita 1, Tomosuke Aono 1, Masayuki Murata 2, Daiki Nakamura 2, Yasuhiro Hasegawa 2 |
| ’ | 15 | Crystal orientation dependence of thermoelectric properties in bismuth nanowire | Saitama Univ. 1,Ibaraki Univ. 2@*Masayuki Murata 1,Daiki Nakamura 1,Hiroya Yamamoto 1,Yasuhiro Hasegawa 1,Takashi Komine 2 |
| 16 | Reducing thermal conductivity of thermoelectric materials by using a narrow wire geometry
| Saitama Univ. 1, Ibaraki Univ. 2@*Yasuhiro Hasegawa 1, Masayuki Murata 1, Daiki Nakamura 1, Hiroya Yamamoto 1, Takashi Komine 2
|
| 17 | Application of high-thermoelectric-power materials to self-cooling device | Yokohama National University 1, National Defense Academy 2, Chubu University 3@Hiroshi Nakatsugawa1, Yoichi Okamoto2, Satarou Yamaguchi |
| 9.5 New Functional Materials and New Materials Science |
| March 20 9:00`11:15 |
| 20a-ZC - 1`8 |
| | 1 | Elementary Process of Electromigration at Gold Nanojunctions | IIS Univ. of Tokyo 1, CREST-JST 2, INQIE Univ. of Tokyo 3@*Umeno Akinori, Yoshida Kenji, Sakata Shuichi, Hirakawa Kazuhiko |
| 2 | Functionality of Prussian blue junction and film morphology | Univ. of Tsukuba 1@*Shibata Takayuki 1, Moritomo Yutaka 1
|
| 3 | Electrical and optical properties of Cr2O3+x (0<x<1) used for complete removal of volatile organic compounds | Graduate School of Engineering, Yokohama National Univ.@*Hiramatsu Hirotaka 1, Iwamoto Ryo 1, Takahashi Hiroo 1,Suzuki Shigeru 1, Mizuguchi Jin 1 |
| 4 | Electrical properties of semiconductive alpha-Fe2O3 and its use as the catalyst for VOC | Faculty of Engineering, Yokohama National Univ. 1, Graduate School of Engineering, Yokohama National Univ. 2@*Yui Yuhki 1, Ito Simpei 2, Takahashi Hiroo 2, Suzuki Shigeru 2, Mizuguchi Jin 2 |
| | | Break 10:00`10:15 | |
| 5 | Electric Properties of ITO with Dispersed Magnetite Nanoparticles | Kyushu Inst Tech. 1, MIMS 2, Osaka Univ. 3@*Okada Koichi 1, Kohiki Shigemi 1, Shimooka Hirokazu 1, Arai Masao 2, Mitome Masanori 2, Tanaka Hidekazu 3 |
| 6 | Synthesis and Magnetic Properties of Fe3O4NPs/RITO Composite | KIT 1, NIMS 2, Tohoku U. 3@Manabe Takuro 1, Okada Koichi 1, Kohiki Shigemi 1, Shimooka Hirokazu 1, Deguchi Hiroyuki 1, Mito Masaki 1, Mitome Masanori 2, Shishido Toetsu 3 |
| 7 | Magnetic Properties of Rare Earth Diphthalocyanines Doped with Alkaline Metals | Saitama Univ. 1,RIKEN 2,KYOKUGEN Osaka Univ. 3,@*Iwasaki Makoto 1,Matsushima Yasuyuki 1,Honda Zentaro 1,Fukuda Takeshi 1,
Kamata Norihiko 1,Katori Hiroko 2,Hagiwara Masayuki 3, |
| 8 | Ag isotope fractionation in a centrifuged Ώ-AgI super-ionic conductor | JAEA 1, Kumamoto Univ. 2@*Masao Ono 1, Ting Hao 1, Satoru Okayasu 1, Yusuke Iguchi 2, Fumitaka Esaka 1, Bagum Rabaya 2, Rie Haruki 1, Tsutomu Mashimo 2,1 |