| 16 Amorphous and Microcrystalline Materials |
| 16.1 Fundamental Properties and Evaluations |
| March 17 10:00`17:45 |
| 17a-TG - 1`11 |
| |
1 |
A Study of Charge Retention Characteristics of Metal Nanodots Memory |
Graduate School of Engineering, Tohoku Univ. 1, International Advanced Research and Education Organization, Tohoku Univ. 2, Graduate School of Biomedical Engineering, Tohoku Univ. 3@*Hiraki Tatsuro 1, Pei Yanli 2 , Kojima Toshiya 1, Bea Ji Cheol 1, Kino Hisashi 1, Fukushima Takafumi 1, Koyanagi Mitsumasa 1, Tanaka Tetsu 1,3 |
| 2 | Control of GeSbTe film composition by chemical vapor deposition | Meiji Univ. 1, Gas-phase Growth Ltd 2, Toyota Technological Inst. 3@Seiti Hamada 1, Takafumi Horiike 1, Masato Ishikawa 2, Hideaki Machida 2,Atsushi Ogura 1, Yoshio Ohshita 3 |
| 3 | Structural change in Ge2Sb2Te5 films by thermal annealing ? | Graduate School of Engineering, Gunma Univ. 1
@Kawarai Kenta 1,Gotoh Tamihiro 1 |
| 4 | Structural changes in Ge2Sb2Te5 films after thermal annealing : II | Gunma Univ. 1@*Tamihiro Gotoh 1, Kenta Kawarai 1 |
| 5 | Effect of an external electric field on the photodoping in Ag/AsS2 | Hokkaido Univ., Dept. Appl. Phys. 1@*Terakado Nobuaki 1, Tanaka Keiji 1 |
| | | Break 11:15`11:30 | |
| 6 | Simulation of TOF in a-Si:H due to Hopping | Nihon Univ. College of Humanities & Sciences 1@Yukio Nomura 1, *Kazuro Murayama 1 |
| 7 | Light-induced annealing of hole trap states in a-Si:H II | AIST 1@*Sakata Isao 1,Kamei Toshihiro 1,Yamanaka Mitsuyuki 1 |
| 8 | Structure of microcrystalline silicon determined from Raman spectra exited various lights | Univ. of Miyazaki Faculty of Engineering 1@*Kouji Maeda 1,Syouki Wada 1,Kensuke Nishioka 1 |
| 9 | Nonlinear optical properties of Silicon nanocrystals (II) -Effect of P-doping- | Kove Univ. 1@*Ito Masahiko 1,Imakita Kenji 1,Fujii Minoru 1,Hayashi Shinji 1 |
| ’ | 10 | Size Reduction of Silicon Nanocrystals by Changing VHF Plasma Power | QNERC Tokyo Tech. 1, Tokyo Tech. 2, SORST-JST 3@*Nakamine Yoshifumi 1, 3, Kodera Tetsuo 1, Uchida Ken 2, 3, Oda Shunri 1, 3 |
| 11 | Structural relaxation of amorphous SiC studied by in situ transmission electron microscopy | Osaka Univ. 1, Tohoku Univ. 2, Konan Univ. 3@*Manabu Ishimaru 1, Akihiko Hirata 1,2, Muneyuki Naito 1,3 |
| | | Lunch 13:00`14:00 | |
| 17p-TG - 1`14 |
| 1 | Synthesis and Photoluminescence Properties of Al2O3-Based Crystals
Prepared Under Vacuum
| Kobe Univ. 1@Akiko Fujiwara 1, Takashi Uchino 1 |
| 2 | Preparation and photoluminescence properties Al2O3-based crystalline systems (?) | Kobe Univ. 1@*Matsubara Yuya 1, Uchino Takashi 1 |
| 3 | Possible mechanism of photoluminescence in bazirite phase | Tohoku Univ. 1@*Kenichiro Iwasaki 1, Yoshihiro Takahashi 1, Hirokazu Masai 1, Takumi Fujiwara 1 |
| 4 | Structures and third-order optical nonlinearities of BiO1.5-WO3-TeO2 glasses | Nagoya Inst. Tech.1, Limoges Univ.2, Toyota Phys. Chem. Res. Inst.3@*Hayakawa Tomokatsu1,3, Fujiwara Takeshi1,2, Nogami Masayuki1, Philippe Thomas2 |
| ’ | 5 | Properties of Stimulated Raman Scattering for Phospho-Tellurite Glass | Toyota Tech. Inst.@William Teruo Shiosaka, Shohei Miyoshi, Takenobu Suzuki, Yasutake Ohishi |
| 6 | Transfer quantum efficiency from Cr to Nd in Nd,Cr codoped silicate glass | TOYOTA Central R&D Labs.,inc. 1, Toyota Tech. Inst. 2@*Mizuno Shintaro 1, Hasegawa Kazuo 1, Ito Hiroshi 1, Kawai Hiroyuki 2, Nasu Hiroyuki 2, Suzuki Takenobu 2, Ohishi Yasutake2 |
| ’ | 7 | Quantum efficiency of Nd3+ doped tellurite glass under sunlight excitation | Toyota Tech. Inst. 1, Toyota Central R&D Labs., IC. 2, Hakodate ational College of Tech.3@*Nasu Hiroyuki 1, Kawai Hiroyuki 1, Suzuki Takenobu 1, Ohishi Yasutake 1, Mizuno Shintaro 2, Hasegawa Kazuo 2, Ito Hiroshi 2, Shikano Kouji 3 |
| | | Break 15:45`16:00 | |
| 8 | F2 laser-induced lattice-interstitial oxygen exchange in amorphous SiO2 | TMU 1, JST 2, TITech 3@*Koichi Kajihara 1, Masahiro Hirano 2,3, Hideo Hosono 2,3 |
| ’ | 9 | Design of nonlinear optical KNbO3-based crystallized glasses and crystal line patterning | Nagaoka Univ. Tech. 1@*Kioka Keitaro 1, Honma Tsuyoshi 1, Komatsu Takayuki 1 |
| 10 | Crystallization behavior of sol-gel derived Li2O-Nb2O5-SiO2 thin film | Nagaoka Univ. Tech.@Honma Tsuyoshi 1, Komatsu Takayuki 1 |
| 11 | Morphology control and crystal growth mechanism of ferroelastic crystals in rare earth molybdate glasses. | Nagaoka Univ. of Tech.@*Futoshi Suzuki 1, Tsuyoshi Honma 1, Takayuki Komatsu 1 |
| 12 | Crystallization behavior of SrO-TiO2-SiO2 glass | Tohoku Univ.@Yoshiki Yamazaki, Hirokazu Masai, Yoshihiro Takahashi, Takumi Fujiwara |
| 13 | Nucleation tendency and structural dimension in silicate glasses | Tohoku Univ. 1, NIMS 2@*Takahashi Yoshihiro 1, Masai Hirokazu 1, Fujiwara Takumi 1, Osada Minoru 2 |
| ’ | 14 | Preparation of YLF containing transparent crystallized glass | Toyota Technological Institute@Kento Mizuno, Masaki Shinichiro, Takenobu Suzuki, Yasutake Ohishi |
| 16.1 Fundamental Properties and Evaluations |
| March 18 10:00`13:00 |
| 18a-TN - 1`11 |
| 1 | Structural analyses of phosphate glasses containing rare earth elements by Raman spectroscopy | Alps electric co.,ltd@*Shinozaki Hiroko,Takahashi Shio,Kanada Yoshihiro,Hanada Akio,Yamamoto Yutaka,Michimata Toru |
| 2 | Structural analyses of phosphate glasses containing rare earth elements by XPS and other methods | Alps electric co.,ltd@*Takahashi Shio 1,Shinozaki Hiroko 1,Kanada Yoshihiro 1,Hanada Akio 1, Yamamoto Yutaka 1,Michimata Toru 1 |
| 3 | Optical properties of halide-substituted bismuth phosphate glasses. | AIST 1, Nihon Yamamura Glass Co. Ltd 2, Hokkaido Univ. 3@*Kitamura Naoyuki 1, Fukumi Kohei 1, Nakamura Junichi 2, Hidaka Tatsuo 2, Ikeda Takurou 2, Hashima Hidekazu 2, Nishii Junji 3 |
| ’ | 4 | Emission property of Sn-doped phosphate glass and the optical application | Tohoku Univ. 1, Asahi Glass Co.,Ltd. 2@*Masai Hirokazu 1, Takahashi Yoshihiro 1, Fujiwara Takumi 1, Matsumoto Shuji 2 |
| 5 | Time responses of voltage and current in the transparent conductive film based on the phosphate glass | Chubu Univ.1@*Ichimura Kazuya 1,Tahashi Masahiro 1,Goto Hideo 1,Ido Toshiyuki 1 |
| | | Break 15:15`15:30 | |
| 6 | Fabrication of SrTiO3: Pr,Al thin films by sputtering method | Nihon Univ. 1@*Ohashi Takuya 1,Shimizu Kousaku 1 |
| 7 | Observation of Luminescence and Stimulated Emission in Short-wavelength Band from Silica Film | Kanagawa Inst. Tech. 1, Numazu Nation. College Tech. 2@Kasahara Kei 1, Uno Takehiko 1, Noge Satoru 2 |
| 8 | Evaluation of Synthetic Silica Glasses Using the Ultrasonic Micro-Spectroscopy Technology |Heat-treatment temperature dependences| | Graduate School of Engineering, Tohoku Univ. 1@Jun-ichi Kushibiki 1, *Mototaka Arakawa 1, Yuji Ohashi 1, Sho Yoshida 1, Takanori Kondo 1, Yuko Maruyama 1, Hideki Shimamura 1, Tatsuya Sakuta 1
|
| 9 | Temperature Dependence of Density of Vitreous Silica | Univ. Fukui 1, Univ. Fukui 2, Univ. Fukui 3@*Mitsuya Tanaka 1,Nobu Kuzuu 2,Masashi Yamamoto 3 |
| 10 | An effect of ambient gas condition upon devitrification of silica glass with NaCl grain | Fukui National College of Technology 1, Fukui Univ.2@*Naohiro Horii 1,Takashi Sugie 1,Nobu Kuzuu 2,Kimio Maegawa 1,Akihiro Inouye 1 |
| 11 | Evaluation of Photo-elastic Constant of Oxide Glasses | Ehime Univ. 1@*Naoki Yamamoto 1, Hiromichi Takebe 1 |
| 16.2 Process Technologies |
| March 18 14:00`18:30 |
| 18p-TN - 1`17 |
| 1 | Formation of organic semiconductor crystals by using electrostatic inkjet | Dept. of electronics, Kyushu Univ. 1@*Masahito Uotani 1, Yuji Ishida 1, Tanemasa Asano 1 |
| 2 | Radical Formation Processes from Ammonia on Ru and W Catalysts | Shizuoka Univ. 1, JAIST 2, Nagaoka Unv. Tech. 3@*Umemoto Hironobu 1, Kashiwagi Yuta 1, Ohdaira Keisuke 2, Kobayashi Hiroyuki 2, Yasui Kanji 3 |
| 3 | Catalytically Excited Water-promoted CVD (CEW-CVD) and the fabrication of high quality ZnO epilayer | Nagaoka Univ. of Tech.@*Miura Hitoshi 1,Nishiyama Hiroshi 1,Tamura Kazunari 1,Yasui Kanji 1,Inoue Yasunobu 1
|
| 4 | a-SiGe(H) on defferent substrate fabricated by sputtering for optical device application | Waseda@Univ.@Y.Imadera 1, T.Goya 1, K.Utaka 1 |
| 5 | Low Temperature Deposition of InXGa1-XN Films by Reactive RF-Sputtering and Their Characteristics | Gifu Univ. 1@*Sahashi Tatsuro 1,Hibino Shun 1,Matsuoka Daisuke 1,Ohashi Fumitaka 1,Itoh Takashi 1,Nonomura Shuichi 1 |
| 6 | Effects of CO2 introduction to the reactive RF sputtering processes for micro-crystalline Ge thin films | Tokai Univ.@*Kataoka Takuro 1,Egawa Junichi 1,Hatano Yuta 1,Yoshida Masahiro 1,Isomura Masao 1 |
| 7 | Crystalline germanium thin films on single crystal silicon substrates by electron beam evaporation.
| Tokai Univ.1@Shotaro Iguchi 1,Masao Isomura 1 |
| 8 | Growth of stable amorphous Si films using gas flow-controlled RF multi-hollow plasma | National Institute for Materials Science 1, Osaka Univ. 2@*Chisato Niikura 1, Akihisa Matsuda 2 |
| | | Break 16:00`16:15 | |
| 9 | Optimization of preparation conditions of NaSi for synthesis of Type II Si clathrate | Gifu Univ. 1, Gifu Natl. Coll. Tech. 2@*Arai Noritaka, Leong Fong Wai, Suzuki Takatoshi, Koketsu Ryuzo,Ueno Hiroyuki, Ohashi Fumitaka, Ban Takayuki, Kume Tetsuji, Habuchi Hitoe, Iida Tamio, Natsuhara Hironori, Nonomura Shuichi |
| 10 | Dependence of Crystalline Structures of Si clathrate on Annealing Time and Temperature | Gifu Univ. 1, Gifu Natl. Coll. Tech. 2@*Ohashi Fumitaka@1, Koketsu Ryuzo 1, Ueno Hiroyuki 1, Baba Tatsuya 1, Arai Nnoritaka 1, Leong Fong Wai 1, Suzuki Takatoshi 1, Ban Takayuki 1, Kume Tetsuji 1, Habuchi Hitoe 2, Iida Tamio 2, Natsuhara Hironori 1, Nonomura Shuichi 1 |
| 11 | Microstructural Analysis of Si0.5Ge0.5 Thin Films Fabricated by Al-Induced Crystallization | Kyushu Univ.@*Inutsuka Junpei1,Itakura Masaru1,Nishida Minoru1,
Kurosawa Masashi2,Sadoh Taizoh2,Miyao Masanobu2 |
| 12 | Orientation Control of SiGe on Insulator Formed by Al-Induced Crystallization | Kyushu Univ. 1, JSPS Research Fellow 2@*Kawabata Naoyuki 1, Kurosawa Masashi 1,2, Sadoh Taizoh 1, Miyao Masanobu 1 |
| 13 | Thin film formation mechanism with Heat Beam technology | Philtech Inc.@*Naomi Mura 1, Shinji Nishihara 1, Yoshinori Shimizu 1, Yuji Furumura 1 |
| 14 | Temperature dependence of the electrical properties of poly-Si films formed by flash lamp annealing | Jpn. Adv. Inst. Sci. & Tech. 1, JST PRESTO 2@*Nishikawa Takuya 1, Ishii Syouhei 1, Tomura Naohito 1, Ohdaira Keisuke 1, 2, Matsumura Hideki 1 |
| 15 | Determination of dominant recombination mechanisms
in solar sells fabricated using poly-Si films formed by flash lamp annealing
| Jpn. Adv. Inst. Sci. & Tech.1, JST PRESTO 2@*Shohei Ishii 1, Naohito Tomura 1, Takuya Nishikawa 1, Keisuke Ohdaira 1,2, Hideki Matsumura 1 |
| 16 | Influence of Substrate Materials in the Formation of Poly-Si Films by Flash Lamp Annealing | Jpn. Adv. Inst. Sci. & Tech. 1,JST PRESTO 2@*Tomura Naohito 1,Nishikawa Takuya 1,Ishii Shohei 1,Ohdaira Keisuke 1,2,Matsumura Hideki 1
|
| 17 | Plasma crystallization of a-Si film on AZO for solar cell application | Saitama Univ. 1@*Ohba Daisuke 1,Lai Chen Hui 1,Sato Syunsuke 1,Ohta Naoki 1,Shirai Hajime 1 |
| 16.3 Devices |
| March 18 10:00`18:00 |
| 18a-TG - 1`11 |
| ’ | 1 | Ellipsometry characterization of a-Si:H layers for thin-film solar cells | Gifu Univ., CIPS 1@*Shouta Kageyama 1,Hiroyuki Fujiwara 1 |
| ’ | 2 | Dielectric function model for Κc-Si:H layers fabricated by PECVD | Gifu Univ.,CIPS@Kanie Yosuke 1,Fujiwara Hiroyuki 1 |
| ’ | 3 | Ellipsometry analysis of textured a-Si:H/transparent conductive oxide structure | Gifu Univ., CIPS 1@*Akagawa Masataka 1,Fujiwara Hiroyuki 1 |
| ’ | 4 | Characterization of a-Si:H layers on textured c-Si by eliipsometory tilt angle measurement | Gifu Univ.,CIPS@Kouji Watanabe 1,Hiroyuki Fujiwara 2 |
| 5 | Characterization of surface potential in a-Si:H solar cells by KFM | Gifu Univ. 1@*Takashi sakai 1, Shinichi Nakashima 1,Zhang Ting 1,Takashi itoh 1, Hiromune Natsuhara 1,Shuiti Nonomura 1 |
| 6 | Defect density distribution of Κc-Si:H prepared at high rate | Grad. School of Eng. Sci. Osaka Univ. 1@*Iwata Masahiro 1, Tanaka Michiko 1, Sobajima Yasushi 1, Toyama Toshihiko 1, Sada Chitose 1, Matsuda Akihisa 1, Okamoto Hiroaki 1 |
| | | Break 11:30`11:45 | |
| 7 | Investigation of growth process in p-type Κc-Si:H film for thin-film Si solar cell. | Osaka Univ. 1@*Kamanaru Shiro 1, Nagai Tomoyuki 1, Sannai Hiroya 1, Jakapan Chantana 1, Sobajima Yasushi 1, Toyama Toshihiko 1, Sada Chitose 1, Matsuda Akihisa 1, Okamoto Hiroaki 1 |
| 8 | Influence of Dopant in Microcrystalline Silicon Thin Films Prepared by Remote PECVD | Tokyo Univ. of Agri. & Tech. 1@*Yoshiba Shuhei 1, Kobayasi Keiji 1, Kamisako Koichi 1 |
| 9 | Substrate Cleaning for Fabrication of c-Ge Based Heterojunction Solar Cells | Tokyo Tech. 1, AIST RCPV 2@*Tetsuya Kaneko 1, Michio Kondo 1,2 |
| 10 | Effect of Post-deposition Annealing on Solar-cell Performance of Microcrystalline Silicon | Osaka Univ. 1@*Tsutsui Yuichi 1,Kubota Yu 1,Jakapan Chantana 1,Sobajima Yasushi 1,Toyama Toshihiko 1,Sada Chitose 1,Matsuda Akihisa 1,Okamoto Hiroaki 1 |
| 11 | Influence of substrate morphology on n-i-p type microcrystalline Si1-xGex:H solar cells | Tokai Univ. 1,AIST 2@*Takada Tomoyuki 1,Matsui Takuya 2,Sai Hitoshi 2,Isomura Masao 1,Kondo Michio 2 |
| | | Lunch 13:00`14:00 | |
| 18p-TG - 1`14 |
| 1 | Light Elements Mapping in Cast-grown Polycrystalline Silicon | Meiji Univ. 1C Kanagawa Ind. Tech. Center 2C Univ. Hyogo 3C Toyota Tech. Inst. 4@*Ishizuka Takahide 1C2COgura Atsushi 1CArafune Koji 3COhshita Yoshio 4COno Haruhiko 2 |
| 2 | Microscopic Distribution of Light Elements and their Precipitates in Polycrystalline Si | Kanagawa Ind. Tech. Center 1, Meiji Univ. 2, Univ. Hyogo 3, Toyota Tech. Inst. 4@*Ono Haruhiko 1, Kato Chihiro 1, Ishizuka Takahide 1,2, Arafune Koji 3, Ohshita Yoshio 4, Ogura Atsushi 2 |
| ’ | 3 | Microscopic Photoluminescence Analysis around Defects in Multicrystalline Silicon | ISAS/JAXA 1, Soken Univ. 2, Meiji Univ. 3@*Iwata Yasuaki 1, 2, Ikebe Masatoshi 1, 3, Toyota Hiroyuki 1, Tajima Michio 1 |
| 4 | Characterization of Multicrystalline Silicon Materials by Local Photothermal Measurements | IIS 1 & INQIE 2, The Univ. of Tokyo@*Hara Kenji 1, Takahashi Takuji 1,2 |
| 5 | M?ssbauer Spectroscopic Microscope for Fe impurity mapping | Shizuoka Institute of Science and Technology 1,Shimadzu Corp. 2@Yutaka Yoshida 1,*Masahiro Ichino 1,Kazuo Hayakawa 1,Kenichi Yukihira 1,Hiroyoshi Soejima 1,2 |
| | | Break 15:15`15:30 | |
| ’ | 6 | Generation mechanism of dislocations in Si multicrystals using artificially designed seed | Tohoku Univ. 1, Norwegian University of Science and Technology 2@*Takahashi Isao 1, Usami Noritaka 1, Kutsukake Kentaro 1, Gaute Stokkan 2, Morishita Kohei 1, Nakajima Kazuo 1
|
| 7 | Attempt for Fabrication of Epitaxial Si thin film on textured Ni tape | Kagoshima Univ. 1@*Toshiya Doi 1, Takahiro Kamiya 1, Y. Hakuraku 1 |
| ’ | 8 | Observation of Lattice Strain in Multicrystalline Silicon
by Synchrotron X-ray Topography | Osaka Univ. 1, JASRI 2, NIMS 3@*Matsumiya Takuya 1, Shimokawa Daisuke 1, Hosoi Takuji 1, Shimura Takayoshi 1, Kajiwara Kentaro 2, Jun Chen 3, Sekiguchi Takashi 3, Watanabe Heiji 1 |
| 9 | Generation mechanism of defects in silicon multicrystals during crystal growth | IMR, Tohoku Univ. 1@*Abe Takuro 1, Kutsukake Kentaro 1, Fujiwara Kozo 1, Usami Noritaka 1, Nakajima Kazuo 1 |
| ’ | 10 | Evaluation of stress distribution and structure at °9 grain boundaries in multi-crystalline silicon substrate for solar cells | Meiji Univ. 1, Univ. of Hyogo 2, Toyota Tech. Inst.3@Tachibana Tomihisa 1, Masuda Junichi 1, Arafune Koji 2, Ohshita Yoshio 3, Ogura Atsushi 1
|
| | | Break 16:45`17:00 | |
| 11 | Quality Evaluation of Aluminum-doped Multicrystalline Silicon Ingot | Tokyo Univ. of Agri. & Tech. 1, Sumitomo Chemical Co. Ltd. 2@*Ban Naoki 1, Dhamrin Marwan 1, Goh LingWei 1, Megumi Tomohiro 2, Tabuchi Hiroshi 2, Saegusa Kunio 2, Kamisako Koichi 1 |
| £ | 12 | Crystal growth of high-purity multicrystalline silicon using a unidirectional solidification furnace for solar cells | RIAM, Kyushu Univ. 1, AIST 2@*Gao Bing 1, Chen Xuejiang 1, Nakano Satoshi 1, Nishizawa Shin-ichi 2, Kakimoto Koichi 1 |
| 13 | Characteristics of monocrystalline silicon solar cells using wafers sliced by Diamond wire | NORITAKE CO., LIMITED 1, AIST 2@*Aoyama Takayuki 1, Kondo Yoichi 1, Takato Hidetaka 2, Sakata Isao 2 |
| ’ | 14 | High-Efficient Polycrystalline silicon solar cells using wafers sliced by Diamond wire | Noritake CO., LIMITED 1, Noritake Super Abrasive CO., LTD. 2, AIST 3@*Aoyama Takayuki 1, Kondo Yoichi 2, Matsumoto Tomohiro 2, Takato Hidetaka 3, Sakata Isao 3 |
| 16.3 Devices |
| March 19 10:00`12:15 |
| 19a-TG - 1`8 |
| 1 | Study on texturization for crystalline silicon solar cells with chlorine trifluoride gas and acid solution | Seikei Univ.@*Kohata Hayato 1, Sanda Takahiro 1, Momma Tadashi 1, Saito Yoji 1 |
| ’ | 2 | Fabrication of steep surface structures by use of catalytic activity of metals and decrease in reflectivity | ISIR, Osaka Univ.@*Onaka Ayumi ,Takahashi Masao ,Iwasa Hitoo ,Kobayashi Hikaru |
| 3 | Optical Absorption Enhancement using Nanowire Arrays for Si Solar Cell | IBM Research - Tokyo@Hajime Nakamura |
| 4 | Fabrication and Evaluation of Texture Structure for Silicon Solar Cells Using Hydrogen Remote Plasma | Tokyo Univ. of Agri. &. Tech. 1,@*Ogawa Keisuke 1, Kadono Fumiya 1, Dhamrin Marwan 1, Kamisako Koichi 1, |
| | | Break 11:00`11:15 | |
| 5 | The effect of PH3 addition in Si surface cleaning by H atoms | Jpn. Adv. Inst. Sci. & Tech. (JAIST) 1@*Miyamoto Motoharu 1, Koyama Koichi 1, Ohdaira Keisuke 1, Matsumura Hideki 1 |
| 6 | Effect of Thermal Annealing on Silicon Nitride Passivation Films for Monocrystalline Silicon | Tokyo Univ. of Agri. & Tech.@Furuichi Kazuya, Maeda Shuhei, Suzuki Hidenori, Dhamrin Marwan, Suda Masanori, Kamisako Koichi |
| 7 | Preparation and characterization of alumina passivation films with Cat-CVD for solar cells | Kanagawa Inst. of Tech.@Tachihara Masayuki 1, Aizawa Yotaro 1, Saito Naoyuki 1, Ogita Yoh-Ichiro 1 |
| ’ | 8 | Passivation effect of Cat-CVD SiNx/i-a-Si multilayers on Si substrates | Jpn. Adv. Inst. Sci. & Tech. (JAIST)@*Koyama Koichi 1, Ohdaira Keisuke 1, Matsumura Hideki 1 |
| 16.3 Devices |
| March 20 9:00`12:00 |
| 20a-TG - 1`11 |
| 1 | Impact of Front and Rear texturing on Light Trapping in Thin-Film Silicon Solar Cells | AIST 1@*Sai Hitoshi, Michio Kondo |
| 2 | Study on texture shape formed by UV-curing resin for thin-film silicon solar cells | The Nippon Synthetic Chemical Industry 1, Teijin DuPont Films Japan 2,
Kimoto 3, Mitsubishi Gas Chemical Company 4, Toshiba Machine 5, AIST 6
@K Katsuma 1, R Nishio 2, J Nobe 3, T Tokumaru 4, A Hagiwara 5, C Yamamoto 6, M Karasawa 6, A Masuda 6, M Kondo 6 |
| 3 | Electrical and optical properties of transparent electrode by sputtering method | Tosoh Corporation 1@*Kentaro Utsumi 1, Hideto Kuramochi 1, Hitoshi Iigusa 1 |
| 4 | Fabrication and characteristics of superstrate-type thin film silicon solar cells using organic-inorganic hybrid film
| Sumitomo Bakelite Co., Ltd. 1,AIST 2@*Inoue Yusuke 1,Umeda Hideo 1,Yamamoto Chizuko 2,Masuda Atsushi 2,Kondo Michio 2 |
| 5 | The new structure of silicon thin solar cell with high conversion | Univ.of the Ryukyus1,Doshisha Univ.2@Yi Chen 1,Takashi Noguchi 1,Tadashi Ohachi2 |
| ’ | 6 | Analysis of temperature characteristics in single-junction solar cells using SPICE diode model
| Miyazaki Univ.@*Yasuyuki Ota 1, Kensuke Nishioka 1 |
| | | Break 11:30`11:45 | |
| 7 | Fabrication of Silicon Nanowire Solar Cell | Tokyo Univ. of Agri. & Tech.@* Uchiyama Hisashi 1, Tomitsuka Yoshihiro 1, Maishigi Kazuya 1, Furuichi Kazuya 1,
Dhamrin Marwan 1, Kamisako Koichi 1 |
| ’ | 8 | Addition of oxygen to Si quantum dots superlattice solar cells | Dept. of Physical Electronics Tokyo Tech. 1, PVREC Tokyo Tech. 2@*Kurokawa Yasuyoshi 1, Yamada Shigeru 1, Miyajima Shinsuke 1, Yamada Akira 1 2,
and Konagai Makoto 1 2 |
| ’ | 9 | Preparation of Germanium Quantum Dot for the 3rd Generation Photovoltaics | School of Engineering Tokyo Tech. 1,Graduate School of Science and Engineering Tokyo Tech. 2,PVREC Tokyo Tech 3@*Wada Hidetoshi 1,Miyajima Shinsuke 2,Yamada Akira 2,3,Konagai Makoto 2,3 |
| 10 | Photocurrent measurement of epitaxial CaF2/Si quantum-dot structures | Tokyo Institute of Technology@*Oogi Hiroshi 1,Watanabe Masahiro 2 |
| ’ | 11 | Theoretical Study on Electric Structure of nc-Si/SiC Interface Using Tight-binding Quantum Chemical Calculation | Grad.Sch.Eng., Tohoku Univ. 1, NICHe, Tohoku Univ. 2@*Sho Hirose 1, Ryuji Miura 1, Ai Suzuki 2, Hideyuki Tsuboi 1, Nozomu Hatakeyama 1, Akira Endou 1, Hiromitsu Takaba 1, Momoji Kubo 1, Akira Miyamoto 2,1 |