| 15 Science and Technology of Crystals |
| 15.1 Bulk Crystal Growth |
| March 17 10:00`18:00 |
| 17a-TV - 1`8 |
| |
1 |
Growth of large size Pr:Lu3Al5O12(LuAG) single Crystal and its applications |
IMRAMC Tohoku Univ.2C Furukawa Co. Ltd.1@Kei Kamada1C2CKousuke Tsutsumi1CTakanori Endo1, Hiroki Sato1, Usuki Yoshiyuki1CTakayuki Yanagida2CAkira Yoshikawa2 |
| 2 | Growth and spectroscopy of fluorite type Na0.4Lu0.6F2.2 single crystal | IMRAM Tohoku Univ. 1,TOKUYAMA corp. 2, New Industry Creation Hatchery Center (NICHe) 3,IMR Tohoku Univ. 4@*Y Furuya 1,H Tanaka 1,K Fukuda 1,2,N Kawaguchi 1,2,N Abe 1,T Yanagida 1,
Y Yokota 1,K Sugiyama 4, A Yoshikawa 1,3
|
| 3 | Peritectic composition of RE2Si2O7 and application to Ce:GPS crystal growth | Hokkaido Univ.@*Higuchi Mikio, Sato Tsutomu, Takahashi Junichi, Kawamura Sohan, Kaneko H. Junichi |
| £ | 4 | Growth and characterization of Gd1-xYbxF3 single crystals | NIMS 1, ISMA, Ukraine 2@*Valentyn Vasyliev 1, E.Garcia Villora 1, Arnaud Apheceixborde 1, Natali Shiran 2, Kiyoshi Shimamura 1 |
| £ | 5 | Luminescence properties of Ti-doped LiAlO2 scintillator | IMRAM, Tohoku Univ. 1, Institute of Physics AS CR, Czech Republic 2 ,
Univ. of Milano-Bicocca, Italy 3, NICHe, Tohoku Univ. 4
@Pejchal Jan 1,2, Moretti Federico 3, Vedda Anna 3, Nikl Martin 2,
Yanagida Takayuki 1, Yokota Yuui 1, Yoshikawa Akira 1,4
|
| £ | 6 | Dopant Segregation in Melt Crystal Growth and Ceramic Processing: Data Correlation | IMRAM, Tohoku Univ. 1, NICHe, Tohoku Univ. 2@Valery I. Chani 1, Georges Boulon 1, Takayuki Yanagida 1, Akira Yoshikawa 1,2 |
| ’ | 7 | Crystal growth and scintillation properties of Pr:YCa4O(BO3)3 | IMRAM Tohoku Univ. 1, NICHe, Tohoku Univ. 2, JAAME. 3, Institute of Physics AS CR.4@*Fujimoto Yutaka 1, Yokota Yuui 1,2, Yanagida Takayuki 1,2, Maeo Shuuji 1,3,
Pejchal Jan 1,4, Nikl Martin 4, Yoshikawa Akira 1,2 |
| 8 | Growth and structural analysis of Ce:A3RE(BO3)3 (A=Sr/Ba, RE=Y/Gd) | IMR, Tohoku Univ. 1, IMRAM, Tohoku Univ. 2@Yagi Tatsushi 1, *Simura Rayko 1, Sugiyama Kazumasa 1, Sugawara Takamasa 1, Shishido Toetsu 1, Kagamitani Yuji 2, Yoshikawa Akira 2 |
| | | Lunch 12:00`13:30 | |
| 17p-TV - 1`17 |
| 1 | Crystal growth and evaluation of optical properties for hygroscopic halide single crystals by modified micro-PD method | IMRAM Tohoku Univ. 1, Tokuyama Corp. 2, NICHe Tohoku Univ. 3@*Yokota Yuui 1, Yanagida Takayuki 1, Maeo Shuji 1, Kawaguchi Noriaki 1,2, Fukuda Kentaro 1,2, Yoshikawa Akira 1,3 |
| £’ | 2 | Czochralski Growth of Tb3(Sc1-xLux)2Al3O12 (x=0.05; 0.1; 0.2) Single Crystals for the Optical Isolator | NIMS 1, Fujikura Ltd. 2@*Anastasiya Latynina 1, Akiharu Funaki 1,2, Tsubasa Hatanaka 1,2, Kunihiro Naoe 2, E.Garcia Villora 1, Kiyoshi Shimamura 1 |
| 3 | Segregation of melt species of the congruent lithium niobate during growth | Tohoku Univ. 1@*Uda Satoshi 1 |
| ’ | 4 | Second harmonic generation property of MgO-doped LiNbO3</sub) crystal having a stoichiometric and a congruent composition | IMR Tohoku Univ. 1, CIR Tohoku Univ. 2@*Hiromitsu Kimura 1, Haruhiko Koizumi 1, Kazumasa Sugiyama 1, Tetsuo Taniuchi 2, Satoshi Uda 1 |
| 5 | The difference of the segregation behavior by the impurity ion during the growth of congruent LiNbO3 crystal | IMR Tohoku Univ. 1@*Iida Shintaro 1, Kimura Hiromitsu 1, Uda Satoshi 1 |
| 6 | Partitioning of impurity ion between solid and liquid during growth of lithium niobate under external electric field by current injection | IMR Tohoku Univ. 1@*Tsubota Takeshi 1, Uda Satoshi 1 |
| 7 | Langatate decomposition by high-temperature heat treatment | CITIZEN HOLDINGS CO.,LTD. 1,IMR. Tohoku Univ. 2@*Ritsuko Yaokawa 1,Katsumi Aota 1,Satoshi Uda 2 |
| 8 | Investigation of growth atmosphere of nonlinear optical crystal CsLiB6O10 | Graduate School of Eng., Osaka Univ. 1, CREST-JST 2@Takahiro Kawamura 1,2, Yohei Shimizu 1,2, Yuji Fukushima 1,2, Yusuke Mizobe 1,2, Masashi Yoshimura 1,2, Yushi Kaneda 1,2, Yasuo Kitaoka 1,2, Yusuke Mori 1,2,@Takatomo Sasaki 1,2 |
| | | Break 15:30`15:45 | |
| 9 | Partition phenomena in colloidal crystal | Tohoku Univ. IMR 1@Jun Nozawa |
| 10 | Role of the electric double layer in controlling the nucleation rate for tetragonal hen-egg white lysozyme crystals by applying an external electric filed | IMR, Tohoku Univ. 1@Haruhiko Koizumi 1, Kozo Fujiwara 1, Satoshi Uda 1 |
| 11 | Control of Polymorphs for Hen-Egg White Lysozyme under Application of an External Electric Field | IMR, Tohoku Univ. 1@*Yosuke Tomita 1, Haruhiko Koizumi 1, Kozo Fujiwara 1, Satoshi Uda 1
|
| 12 | Crystal Growth by Newly Developed Floating Zone Furnace with Lasers as Heat Source | AIST 1@*Ito Toshimitsu 1, Yanagisawa Yuji 1, Tomioka Yasuhide 1 |
| 13 | Relationship between solid-liquid interface shape and low grain-boundaries in VB growth of sapphire crystals | Fujikoshi Machinery 1C NEL Crystal 2, Shinshu Univ. 3@Miyagawa Chihiro 1, Nakamura Taichi 1, Kobayashi Takumi 1, Kanno Kazuya 2, Hoshikawa Keigo 3 |
| 14 | Incorporation and segregation of oxygen in CZ-Ge crystal growth | Shinshu Univ. 1, Tohoku Univ. 2@Taishi Toshinori 1, Ise Hideaki 2, Ohsawa Takayuki 2, Tokumoto Yuki 2, Ohno Yutaka 2, Yonenaga Ichiro 2 |
| 15 | Enhancement of the property of Ga-doped CZ-Si crystal by codoping Ge | IMR Tohoku Univ. 1, RIE Shizuoka Univ. 2@*Raira Gotoh 1, Mukannan Arivanandhan 2, Kozo Fujiwara 1, Satoshi Uda 1 |
| 16 | Numerical analysis of dislocation density in multicrystalline silicon for solar cells during cooling process | RIAM, Kyushu Univ. 1@*Nakano Satoshi 1, Chen Xuejiang 1, Gao Bing 1, Kakimoto Koichi 1 |
| 17 | Numerical simulation of heat and fluid flow in an ammonothermal autoclave
- Effects of NH3 chemical equilibrium -
| AIST 1, Mitsubishi Chemical Co. 2, Tohoku Univ. 3@*Masuda Yoshio 1, Sato Osamu 1, Suzuki Akira 1, Mikawa Yutaka 2, Kagamitani Yuji 3, Ishiguro Tohru 3, Yokoyama Chiaki 3, Tsukada Takao 3 |
| 15.2 II-VI Crystals |
| March 19 14:00`17:15 |
| 19p-TW - 1`12 |
| 1 | Fabrication of stacked structure of CdSe quantum dot by using an alternate molecular beam supply | Okayama Univ. of Science@*Yuto Banden, Masakazu Ohishi, Hiroshi Saito, Minoru Yoneta |
| 2 | MBE Growth and Characterization of ZnS doped with N and Ag | Tottori Univ. 1@*Tanaka Hirotaka 1,Kotani Akio 1,Kuroyanagi Takuma 1,Kinoshita Nao 1,Kunio Ichino 1 |
| ’ | 3 | Organic-Inorganic (Widegap) Semiconductor Hybrid Avalanche Photodiodes(APDs) with high Ultraviolet Sensitivities | Information & Electronic Dept. Tottori Univ.@*Inagaki Yusuke 1, Tani Tatsuya 1, Nomura Mari 1, Tanaka Ken 1, Otsuki masashi 1,abe tomoki 1, Kasada Hirofumi 1, ando koshi 1
|
| 4 | High density Te doping into MBE-ZnSeTe alloy | Hokkaido Inst. of Tech 1@*Kazuya Takahashi 1,Yosihiro Ichinohe 1,Kazuomi Honnma 1,Kazuaki Imai 1,Kazuhiko Suzuki 1 |
| ’ | 5 | Growth of ZnMgTe/ZnTe waveguide structures by MBE and characterization of the dislocation density
| Waseda Univ. Dept. of Elec. Eng. and Biosci. 1, Waseda Univ. Lab. for Mat. Sci. & Tech. 2@Imada Shota 1, baba Toshiaki 1, Ohta Takuya 1, Kumagai Yuki 1, Kihara Daishin 1, Kobayashi Masakazu 1,2 |
| 6 | Twin domain analysis of epitaxial ZnTe film on Si(110) by XRD measurement | Rigaku corp. 1,Waseda Univ. Dept.of Elec.Eng.and Biosci. 2,Lab.for Mat.Sci.&Tech 3@*Kobayashi Shintaro 1,Inaba Katsuhiko 1,Konya Takayuki 1,Kubo Tomikatsu 1,Sakurasawa Sho 2,Imada Shota 2,Baba Toshiaki 2,Kobayashi Masakazu 2,3 |
| 7 | Study of Large Area CdTe X-ray and Α-ray Imaging Detectors Grown by MOVPE(?)
`Study of growth condition for high quality CdTe/Si layer`
| Nagoya Inst. of Technology 1@*Ogawa Hirohisa 1, Oka Hiroki 1, Kato Daisuke 1, Nakajima Hajime 1, Nakanishi Tomoya 1, Matsumoto Kazuya 1, Yoneyama Tomohiro 1,
Agata Yasunori 1, Niraula Madan 1, Yasuda Kazuhito 1 |
| | | Break 15:45`16:00 | |
| 8 | Patterned Growth of ZnO Nanowires Using Nano-Inprint Tachnique | kyushu Univ.@*Toya Kazuyuki 1,Kumeda Akio 1,Matsumoto Takahumi 1,Nakamura Daisuke 1,Higashihata Mituhiro 1,Asano Tanemasa 1,Okada Tatuo 1 |
| 9 | Electric field induced shift of exciton transition energy in ZnO thin film | Information & Electronics Dept. Tottori Univ. 1@*Fujinuma Ryo 1, Satoh Kousuke 1, Kozeni Hiroki 1, Abe Tomoki 1, Kasada Hirofumi 1, Ando Koushi 1 |
| 10 | Transient photocurrent characteristics for two ZnO polar faces.3 | Akita prefectural Univ@*Ishidsuka Yousuke 1,Yamaguchi Hiroyuki 1,Komiyama Takao 1,Chonan Yasunori 1,Aoyama takashi 1 |
| 11 | Thermally stimulated current studies on electron-irradiated single crystal ZnO bulk : Dual light illumination effect
| Hosei Univ. 1, Osaka kyouiku Univ. 2, KURRI 3
@*Takahiro Oga 1,Yusuke Izawa 1, Kazuo Kuriyama 1, Kazumasa Kushida 2, Q. Xu 3 |
| 12 | Ion channeling / nuclear reaction analysis of carbon implanted ZnO bulk single crystals : an origin of low resistivity
| Hosei Univ.1, Osaka kyouiku Univ.2, AIST 3@*Yusuke Izawa 1, Koji Matsumoto 1, Takahiro Oga 1, Kazuo Kuriyama 1, Kazumasa Kushida 2, Atsusi Kinomura 3 |
| 15.3 III-V Epitaxial Growth |
| March 17 9:15`18:15 |
| 17a-TW - 1`11 |
| 1 | Theoretical study on band alignment of twin-plane superlattice in semiconductor nanowires | Mie Univ.@*Akiyama Toru, Yamashita Tomoki, Nakamura Kohji, Ito Tomonori |
| 2 | Theoretical Study of Twinning Formation at Top Layer of InP Nanowires | Mie Univ. 1@*Tomoki Yamashita 1, Toru Akiyama 1, Kohji Nakamura 1, Tomonori Ito 1 |
| £ | 3 | Effect of In-flux on the growth of InAs nanowire by MBE | Hokkaido Univ. RCIQE@*J. Bubesh babu 1, T. Ejiri 1, K. Yoh 1 |
| ’ | 4 | Heteroepitaxial Growth of InGaAs Nanowires by Selective-Area Metal Organic Vapor Phase Epitaxy | Graduated school of IST 1, RCIQE 2, Hokkaido Univ.@*Yoshimura Masatoshi 1 2, Tomioka Katsuhiro 1 2, Hiruma Kenji 1 2, Hara Shinjiroh 1 2, Motohisa Junichi 1, and Fukui Takashi 1 2 |
| 5 | GaAsP nanowire growth on GaAs substrate by selective-area MOVPE | Graduate School of IST 1, RCIQE 2, Hokkaido Univ.@*Shota Fujisawa 1,2, Atsushi Hayashida 1,2, Takuya Sato 1,2, Junichi Motohisa 1, Shinjiro Hara 1,2, Takashi Fukui 1,2 |
| 6 | Growth of GaSb on GaAs by SA-MOVPE | IST Hokkaido Univ. 1, RCIQE Hokkaido Univ. 2, JST PRESTO 3@*Yudai Takayama 1, Katsuhiro Tomioka 2,3, Takashi Fukui 1,2, Junichi Motohisa 1 |
| | | Break 10:45`11:00 | |
| 7 | Self-assembly of highly symmetric quantum dots on GaAs(111)A by droplet epitaxy | NIMS 1@*Mano Takaaki 1, Abbarchi Marco 1, Kuroda Takashi 1, Mcskimming Brian 1, Ohtake Akihiro 1, Mitsuishi Kazutaka 1, Sakoda Kazuaki 1 |
| 8 | Formation of GaAs/AlGaAs quantum wires on GaAs(001) substrates by droplet epitaxy | NIMS 1@*Masafumi Jo 1, Takaaki Mano 1, Kazuaki Sakoda 1 |
| 9 | in situ STM observation of nanohole formation by the Ga droplet on GaAs (001) | Anan Natl. Coll. Tech. 1, Univ. Milano Bicocca 2, NIMS 3@*Teraoka Teruki 1,Claudio Somaschini 2,Toujyou Takashi 1,Konishi Yoshiaki 1,
Sunahara Yonehiko 1,Noda Takeshi 3,Konishi Tomoya 1,Tsukamoto Shiro 1
|
| ’ | 10 | High temperature in situ STM observation of nano-dot grown by 3D growth assist method | Anan Natl. Coll. Tech. 1@*Toujyou Takashi 1, Tsukamoto Shiro 1 |
| 11 | Site-control of Quantum Dots by Electron Beam Irradiation to Oxide Layer | N.I.T.@Kikuchi Tooru 1,Tsunashima Keiichi 1,Yokota Hiroshi 1,Iizuka Kanji 1 |
| | | Lunch 12:15`13:15 | |
| 17p-TW - 1`18 |
| 1 | As4 flux dependence of density of InAs quantum dots on GaAs(001) during MBE growth | Toyota Tech. Inst. 1@*Shirasaka Takeo 1, Kamiya Itaru 1 |
| 2 | Self-Formation Control of Low-Density InAs Quantum Dots by Intermittent Supply Method(4) | Univ. of Electro-Communications@*Takuya Yanagisawa,Yoshihide Ogawa,Koichi Yamaguchi |
| 3 | MOVPE growth and characterization of In(Ga)As-quantum dots using Bi as a surfactant III | Hirosaki Univ. 1, NTT Basic Res. Labs. 2@*Okamoto Hiroshi 1, Tawara Takehiko 2, Gotoh Hideki 2, Kamada Hidehiko 2 |
| 4 | Self formation of in-plane InAs quantum-dot superlattices | Univ.of Electro-Communications 1@*Jun Ohta 1,Kakuda Naoki 1, Koichi Yamaguchi 1 |
| 5 | Stacking Growth of in-plane InAs Quantum-Dot Superlattices | Univ. of Electro-Communications@Toshihiko Inaji 1, Suji Sekiguchi 1, Jun Ohta 1, Koichi Yamaguchi 1 |
| 6 | Fabrication of multistacked InGaAs quantum dot structures ?barrier thickness dependence- | AIST 1@*Takeyoshi Sugaya 1, Takeru Amano 1, Masahiko Mori 1, Sigeru Niki 1 |
| 7 | Highly Stacked InGaAs Quantum Dot Solar Cells | National Institute of Advanced Industrial Science and Technology (AIST) 1, Tokyo City Univ. 2@*Osamu Numakami 1,2, Takeyoshi Sugaya 2, Sigenori Furue 2, Masahiko Mori 2, Kazuhiro Komori 2, Sakae Niki 2, Yoshinobu Okano 1 |
| 8 | Evaluation of multi-stacked InAs/GaNAs self-assembled quantum dots on GaAs(001) | The Univ. of Tokyo, School of Engineering 1, The Univ. of Tokyo, RCAST 2, Univ. of Tsukuba, Inst. of Applied Physics 3, NICT 4
@*Ayami Takata 1,2,4, Ryuji Oshima 1,2, Yasushi Shoji 2,3, Kouichi Akahane 2,4, Yoshitaka Okada 1,2 |
| | | Break 15:15`15:30 | |
| £ | 9 | Growth of InAs/GaAs quantum dots on Germanium-on-insulator-on-silicon substrate emitting at 1.3 um for silicon photonics | NanoQuine, Univ. of Tokyo 1, IIS, Univ. of Tokyo 2, CEA-LETI-Minatec 3@Mohan Rajesh 1, Bordel Damien 1,2, Guimard Denis 2, Nishioka Masao 2, Augendre Emmanuel 3, Clavelier Laurent 3 and Arakawa Yasuhiko 1,2 |
| 10 | Growth of InAs quantum dots on GaP on Si substrate | P&I Lab. Tokyo Tech.@*Tanabe Satoru 1, Suzuki Ryoichiro 1, Nemoto Kosuke 1, Nishio Rei 1, Miyamoto Tomoyuki 1 |
| 11 | Interfacial structures of GaAs quantum dots grown on Si(111) substrates | Toyama Prefectural Univ.1
Kobe Univ.2@*Matsumoto Kimihisa 1, Furukawa Tatsuya 2, Yasuda Hidehiro 2
|
| 12 | Annealing effects on luminescence properties of self-assembled InGaAsN/GaP quantum dots | Toyohashi Univ. Tech.@*Urakami Noriyuki 1,Umeno Kazuyuki 1,Mitsuyoshi Saburo 1,Fukami Futoshi 1, Yonezu Hiroo 1,Furukawa Yuzo 1,Wakahara Akihiro 1 |
| ’ | 13 | Analysis of quantum levels for self-assembled InGaAsN/GaP quantum dots | Toyohashi Univ. Tech.@*Fukami Futoshi 1, Umeno Kazuyuki 1, Urakami Noriyuki 1, Mitsuyoshi Saburo 1, Furukawa Yuzo 1, Yonezu Hiroo 1, Wakahara Akihiro 1 |
| | | Break 16:45`17:00 | |
| 14 | Fast carrier relaxation in Er-doped InAs quantum dots with strain-relaxed barriers | Univ. of Tokushima 1@*Takahiro Kitada 1, Tomoya Takahashi 1, Ken Morita 1, Toshiro Isu 1 |
| 15 | Control of EL polarization characteristics in stacked InAs/GaAs quantum dots | Kobe Univ. 1, Fujitsu Laboratories Ltd. 2@*Inoue Tomoya 1, Asada Masaki 1, Yasuoka Nami 1,2, Kita Takashi 1, Wada Osamu 1 |
| 16 | Neutralization of positively-charged excitonic state in InAs QDs by Si delta doping | NanoQuine 1, Univ. of Tokyo, NEC 2, IIS, Univ. of Tokyo 3@*Kumagai Naoto 1, Ohkouchi Syunsuke 1, Shirane Masayuki 1, 2, Igarashi Yuuichi 1, 2, Nomura Masahiro 1, Ota Yasutomo 1, 3, Yorozu Shinichi 1, 2, Iwamoto Satoshi 1, 3, Arakawa Yasuhiko 1, 3
|
| 17 | Effects of Low-Temperature Capping on the Optical Properties of GaAs/AlGaAs Quantum Nanostructures | NIMS 1@*Duan Guotao 1, Mano Takaaki 1, Jo Masafumi 1, Sakoda Kazuaki 1 |
| 18 | PL properties at Room Temperature of low-density InAs Quantum dots on GaAs(001) fabricated by MBE | Pioneer 1,PioneerMTC 2,NICT 3,Univ.Tokyo 4@*Sawado Yoshinori 12,Yoshizawa Katsumi 12,Akahane Kouichi 3,Yamamoto Naokatsu 3,Kawazoe Tadashi 4,Ohtsu Motoichi 4 |
| 15.3 III-V Epitaxial Growth |
| March 18 9:30`18:00 |
| 18a-TW - 1`12 |
| 1 | Effect of substrate temperature of Te Β-doping InSb films grown on GaAs(100) by molecular beam epitaxy | Tokyo Univ. of Science 1@*Uchida Akinori 1, Hasegawa Atsushi 1, Horii Hiroyuki 1, Yamada Junya 1, Hara Shinsuke 1, Fujishiro Hiroki 1 |
| 2 | Selective area growth of InSb on patterned SiO2/Si substrate by molecular beam epitaxy | Tokyo University of Science@*Iida Tomoaki 1,Hasegawa Atsushi 1,Tanaka Tatuki 1,Nishino Yuuiti 1,Hara Shinsuke 1,Fujishiro Hiroki 1 |
| 3 | Annealing effect of InGaAsSbN layers grown on InP substrates by MBE | FSIC 1, Osaka Prefecture Univ. 2, Sumitomo Electric Industries Ltd. 3@*Yoshikawa Mao 1,2, Miura Kouhei 3, Iguchi Yasuhiro 3, Kawamura Yuichi 1,2 |
| 4 | MBE growth and characterization of InAsSbN Single Quantum Well on InP | F.S.I.C.OPU 1@*Nishino Masatsugu 1, Kawamura Yuichi 1
|
| ’ | 5 | MBE growth of polycrystalline GaSbAs thin films on glass and plastic substrates | Shimane Univ. 1@*Okuzako Takuya 1, Okamura Kenta 1, Matsui Yoshinori 1, Nakaya Kousuke 1, Kajikawa Yasutomo 1 |
| 6 | Residual strain control of strained InGaAs/AlAs/AlAsSb quantum wells by interface formation method between AlAs and AlAsSb | AIST 1@*Gozu Shin-ichiro 1, Mozume Teruo 1, Ishikawa Hiroshi 1 |
| | | Break 11:00`11:15 | |
| 7 | Characterization of the TlInGaAsN/TlGaAsN triple quantum wells grown by ECR molecular-beam epitaxy | ISIR, Osaka Univ. 1@*Kim Kang Min 1, Sakai Yuji 1, Hasegawa Shigehiko 1, Asahi Hajime 1 |
| 8 | MBE growth of GaAsBi/GaAs superlattices and arsenic pressure dependence | Ehime Univ.1@Satoshi Shimomura, Tomoki Ishikawa, Daisuke Yamaguchi |
| 9 | Growth of GaAs1-xBix/AlyGa1-yAs Multiquantum Well Structures on (100)GaAs Substrate | Kyoto Inst. of Tech.@*Fuyuki Takuma 1,Tominaga yoriko 1,Yamada Kazuya 1,Oe Kunishige 1,Yoshimoto mashahiro 1 |
| 10 | Electrical properties of C60 delta-doped Be-GaAs layers | Waseda Univ.1, JST-PRESTO2@*Nishinaga Jiro1,2, Hishida Kiyoshi1, Horikoshi Yoshiji1 |
| 11 | Growth mode estimation of QWR laser structure grown on (775)B InP substrate by MBE | Ehime univ1@Yoshiatsu Mitsunari 1,Naoyoshi Mouri 1,Toyokazu Matsugi 1,Satoshi Shimomura 1 |
| 12 | Bias dependence of photocurrent in pin diodes containing multi- quantum wells | NIMS 1, TTI 2@Takeshi Noda 1, Takaaki Mano1, Kazuaki Sakoda1, and Hiroyuki Sakaki1,2 |
| | | Lunch 12:45`14:00 | |
| 18p-TW - 1`15 |
| | 1 | In situ observation of asymmetrical strain relaxation in lattice-mismatched InGaAs/GaAs(001) by three-dimensional X-ray reciprocal space mapping | Toyota Tech. Inst. 1, JAEA 2, Univ. of Hyogo 3@Takuo Sasaki 1, Hidetoshi Suzuki 1, Akihisa Sai 1, Masamitu Takahasi 2, Seiji Fujikawa 2, Koji Arafune 3, Itaru Kamiya 1, Yoshio Ohshita 1, Masafumi Yamaguchi 1 |
| 2 | Indium composition dependence on strain relaxation in InGaAs/GaAs(001) | Toyota Tech. Inst. 1@*Akihisa Sai 1, Takuo Sasaki 1, Hidetoshi Suzuki 1, Itaru Kamiya 1, Yoshio Ohshita 1, Masafumi Yamaguchi 1 |
| 3 | In situ Observation of growth mechanisms of bcc-Fe on GaAs(001) and InAs(001) by using Grazing Incidence X-ray Diffraction | JAEA@*Fujikawa Seiji 1, Tkahasi Masamitsu 1 |
| £ | 4 | Study of the Si-incorporation in (631)A GaAs layers grown by molecular beam epitaxy | Ehime Univ., Univ. San Luis Potosi CINVESTAV-IPN@D. Vazquez-Cortes, E. Cruz-Hernandez, S. Shimomura, V.H. Mendez-Garcia, M. Lopez-Lopez
|
| £ | 5 | Influence of the As pressure on the surface corrugation of GaAs layers grown on (631)A-oriented GaAs by molecular beam epitaxy | Ehime Univ., Univ. San Luis Potosi, CINVESTAV-IPN@Esteban Cruz Hernandez, David Vazquez Cortes, Satoshi Shimomura, Victor Hugo Mendez Garcia, Maximo Lopez Lopez |
| 6 | Fabrication of Ι cavity include QWR for (In)GaAs QWR VCSELs | Ehime Univ.1@Satoshi Shimomura 1,Esteban C Hernandez 1,Yosuke Hidaka 1,*Kota Osaka 1 |
| 7 | Photoluminescence from isoelectronic traps in N delta-doped GaAs
grown on variously oriented GaAs surfaces(?) | Saitama Univ. 1, AIST 2, ISSP 3, Univ. of Tokyo 4, IMR Tohoku Univ. 5@*Fukushima Toshiyuki 1, Takamiya Kengo 1, Hijikata Yasuto 1, Yaguchi Hiroyuki 1, Yoshida Sadafumi 2, Okano Makoto 3, Yoshita Masahiro 3, Akiyama Hidefumi 3, Kuboya Shigeyuki 4, Onabe Kentaro 4, Katayama Ryuji 5 |
| 8 | Observation of the luminescence centers in the infrared region in nitrogen delta-doped GaP | Tsukuba Univ. 1, PREST-JST 2, NIMS 3@*Watanabe Masato 1, Ikezawa Michio 1,2, Sakuma Yoshiki 3, Masumoto Yasuaki 1 |
| | | Break 16:00`16:15 | |
| 9 | Study of near band-edge energy band structure of GaAsN by photoluminescence | Toyota Tech. Inst.@*Inagaki Makoto 1, Suzuki Hidetoshi 1, Ohshita Yoshio 1, Kojima Nobuaki 1, Yamaguchi Masafumi 1 |
| 10 | Improvement of Minority Carrier Lifetime in GaAsN Grown by Chemical Beam Epitaxy | Toyota Tech. Inst. 1@*Honda Takahiko 1,Inagaki Makoto 1,Suzuki Hidetoshi 1,Kojima Nobuaki 1,Ohshita Yoshio 1,Yamaguchi Masafumi 1 |
| 11 | Investigation of formation process of N-H complex defects in GaAsN grown with deuterated N precursor | Toyota Tech. Inst.@*Tanaka Tomohiro 1, Suzuki Hidetoshi 1, Kojima Nobuaki 1, Ohshita Yoshio 1, Yamaguchi Masafumi 1 |
| ’ | 12 | Reduction of electron traps in Si-doped GaInNAs(Sb) films | The Univ. of Tokyo, School of Eng. 1, The Univ. of Tokyo, RCAST 2@*Miyashita Naoya 1, Ahsan Nazmul 1,2, Okada Yoshitaka 1,2 |
| 13 | Growth of AlPN by solid source molecular beam epitaxy | Toyohashi Univ. Tech. 1, ISSRC 2@*Kawai Tsuyoshi 1, Yamane Keisuke 1, Furukawa Yuzo 1,2, Okada Hiroshi 1,2, Wakahara Akihiro 1,2 |
| 14 | MOVPE Growth of InPN Films on InP(001) Substrates | Univ. of Tokyo 1, Chulalongkorn Univ. 2@*Seki Yuki 1, Wang Yanzhe 1, Thieu Quang Tu 1, Kuboya Shigeyuki 1, Sanorpim Sakuntam 1,2, Onabe Kentaro 1
|
| 15 | MOVPE growth of InGaAsN films on Ge(001) substrates | Tokyo Univ. 1,Chulalongkorn Univ. 2@*Kikuchi Takehiko 1,Thieu Quang Tu 1,Kato Hiroaki 1,Kuboya Sigeyuki 1,Sanorpim Sakuntam 2,Onabe Kentaro 1 |
| 15.3 III-V Epitaxial Growth |
| March 19 9:30`12:45 |
| 19a-TW - 1`12 |
| 1 | Analysis of GaAs Metal Organic Vapor Phase Epitaxy by Selective Area Growth Technique in Large-Scale Reactor
| The Univ. of Tokyo 1,Sumitomo Chemical Co. 2@*Takeru Maeshiro 1,Osamu Ichikawa 2,Masahiko Hata 2,Masakazu Sugiyama 1,Yoshiaki Nakano 1,Yukihiro Shimogaki 1 |
| 2 | In situ monitoring of InGaAs/GaAsP strain-balanced quantum wells for solar cell applications | Univ. of Tokyo@*Masakazu Sugiyama, Kenichi Sugita, Yunpeng Wang, and Yoshiaki Nakano |
| ’ | 3 | High-material-efficiency MOVPE of GaAs without degradation of performances | Univ. of Tokyo 1, Univ. of Tokyo RCAST 2@*Ryusuke Onitsuka 1, Takuo Tanemura 2, Masakazu Sugiyama 1, Yoshiaki Nakano 2 |
| 4 | Effects of defects and local thickness modulation on spin-polarization in photocathodes based on GaAs/GaAsP strained superlattice | Nagoya Univ., Graduate School of Engineering@Jin Xiuguang1,Maeda Yuya1,Ichihashi Fumiaki,Hashimoto Kazuya,Fuchi shingo,Ujihara Toru,Takeda Yoshikazu@ |
| 5 | Characterization of MOVPE-grown InAs/GaAs on InP substrate | Univ. of Electro-Communications@*Tomioka Yoshikuni 1,Koizumi Atsushi 2,Uchida Kazuo 3,Nozaki Shinji 4 |
| 6 | Carbon-doped InxGa1-xAs1-ySby on InP grown by MOCVD | NTT Photonics Lab. 1@*Hoshi Takuya 1, Sugiyama Hiroki 1, Yokoyama Haruki 1, Kurishima Kenji 1, Ida Minoru 1, Yamahata Shoji 1 |
| | | Break 11:00`11:15 | |
| 7 | (111)B GaAs low angle incidence micro-channel epitaxy | Meijo Univ 1@*Yuuki Oosawa 1, Yuuki Nagae 1, Sigeya Naritsuka 1, Takahiro Maruyama 1 |
| ’ | 8 | Enhanced lateral overgrowth of InGaAs on Si by reduced growth area in micro-channel selective area MOVPE | Univ. of Tokyo 1, RCAST 2@*Kondo Yoshiyuki 1, Deura Momoko 1, Takenaka Mitsuru 1, Takagi Shinichi 1, Nakano Yoshiaki 1,2, Sugiyama Masakazu 1 |
| 9 | Time evolution of multi-step growth for InGaAs on Si using micro-channel selective-area growth | Univ. of Tokyo 1, RCAST 2@*Deura Momoko 1, Kondo Yoshiyuki 1, Takenaka Mitsuru 1, Takagi Shinichi 1, Nakano Yoshiaki 1,2, Sugiyama Masakazu 1 |
| 10 | Reduction of Surface Roughness of GaP on Si Substrate
using Strained GaInP Interlayer by MOCVD
| P&I Lab.,Tokyo Inst. of Technology 1@*Nishio Rei 1,Tanabe Satoru 1,Nemoto Kosuke 1,Suzuki Ryoichiro 1,Miyamoto Tomoyuki 1 |
| ’ | 11 | Reduction in operation voltage of light emitting diodes with Si/III-V-N/Si hetero interfacce | Toyohashi Univ. Tech. 1, ISSRC 2@Yamane Keisuke 1,Yamada Shintaro 1,Furukawa Yuzo 1,2,Okada Hiroshi 2, Wakahara Akihiro 1,2 |
| ’ | 12 | Monolithic optoelectric integrated circuit with optical output on Si/III-V-N/Si structure | Toyohashi Univ. of Tech. 1, ISSRC 2
@*Noguchi Kenta 1, Tanaka Seizo 1, Yamane Keisuke 1, Deguchi Yuki 1, Furukawa Yuzo 1,2, Okada Hiroshi 2,1, Wakahara Akihiro 1,2, Yonezu Hiroo 1 |
| 15.4 III-V Nitride Epitaxial Growth |
| March 17 10:00`17:30 |
| 17a-TB - 1`11 |
| £’ | 1 | Residual Strain Evaluation by Cross-sectional Micro-reflectance Spectroscopy of Freestanding GaN Grown by HVPE | R & D Division, Furukawa Co., Ltd. 1, Kanazawa Institute of Technology. 2@*H. Y Geng1, A.A. Yamaguchi2, H. Sunakawa1, N. Sumi1, K. Yamamoto1, and A. Usui1 |
| ’ | 2 | Cathodoluminescence study of V-pits in HVPE grown GaN on sapphire (0001) | NIMS1, Univ. Tsukuba2, Tohoku Univ.3, Korea Maritime Univ.4@*Lee Woong1,2, Lee Hyunjae3, Yao Takafumi3, Chang Jiho4, Sekiguchi Takashi1,2 |
| 3 | Ammonia Cracking Effect to Ammonothermal GaN crystal growth | IMRAM Tohoku Univ. 1, AIST 2@*Kagamitani Yuji 1, Ishinabe Takayuki 1, Kuribayashi Taketo 1, Masuda Yoshio 2, Hazu Koji 1, Onuma Takeyoshi 1, Chichibu Shigefusa 1, Yokoyama Chiaki 1, Ishiguro Toru 1 |
| 4 | Relationship between morphology and oxygen concentration in GaN epitaxial layer grown using Ga2O vapor as a Ga source | Osaka Univ. 1@*Sumi Tomoaki 1,Bu Yuan 1,Kishimoto Hiroki 1,Imade Mamoru 1,Yoshimura Masashi 1,Kitaoka Yasuo 1,Sasaki Takatomo 1,Mori Yusuke 1 |
| 5 | Control of habit of GaN crystals grown on a spontaneous nucleated seed crystal by Na flux method | Osaka Univ. 1@*Yusuke Konishi 1,Hiroshi Ukegawa 1,Satoshi Katsuike 1,Yasuhiro Hirabayashi 1,Mamoru Imade 1,Naoya Miyoshi 1,Masashi Yoshimura 1,Yasuo Kitaoka 1,Takatomo Sasaki 1,Yusuke Mori 1 |
| | | Break 11:15`11:30 | |
| ’ | 6 | Calculation of phase diagrams of Li-Al-N ternary system for AlN growth using CALPHAD method | Kyushu Univ. 1, RIAM, Kyushu Univ. 2, JST PRESTO 3@*Yayama Tomoe 1, Kangawa Yoshihiro 1,2,3, Kakimoto Koichi 1,2 |
| 7 | Planer growth of AlN on pillar-shaped AlN by sublimation method | Fac.Sci.Technology Meijo Univ 1, Tokuyama Cor2@*Masayasu Yamakawa 1, Kazuki Murata 1, Kenji Nagata 1, Hiroshi Amano 1, Motoki Iwaya 1, Satoshi Kamiyama 1 , Isamu Akasaki 1,Masanobu Azuma2 |
| 8 | Influence of carrier gases on growth of a-plane AlN layers on r-plane sapphire substrates by hydride vapor phase epitaxy | Tokyo Univ. of Agri. & Tech. 1, Tokuyama Corporation 2@*Jumpei Tajima 1, Chikashi Echizen 1, Rie Togashi 1, Hisashi Murakami 1, Kazuya Takada 2, Yoshinao Kumagai 1, Akinori Koukitu 1
|
| 9 | LP-HVPE growth of AlN on grooved 6H-SiC substrate | Mie Univ. 1,Nagoya Inst.Tech. 2@Kenta Okumura 1,Hideto Miyake 1,Kazumasa Hiramatsu 1,Osamu Eryuu 2 |
| £ | 10 | Distribution of local strain in thick AlN layers grown on a trench-patterned AlN/sapphire template | Osaka Univ.@1, Mie Univ.@2, JASRI/SPring-8 3@Soam Vishal 1, Yoshitake Osamu 1, Ebihara Kouhei 1, Kikkawa Jun 1, Nakamura Yoshiaki 1, Sakai Akira 1, Miyake Hideto 2, Hiramatsu Kazumasa 2, Imai Yasuhiko 3, Kimura Shigeru3, Sakata Osami 3
|
| 11 | Measurement of temperature dependent lattice constants of single crystal AlN by in-situ X-ray diffraction | Tokyo Univ. of Agri. & Tech. 1, Tokuyama Corporation 2, Bruker AXS K. K. 3@*Sakai Miki 1, Tajima Jumpei 1, Nagashima Toru 2, Togashi Rie 1, Murakami Hisashi 1, Morioka Hitoshi 3, Yamauchi Tsutomu 3, Saito Keisuke 3, Kumagai Yoshinao 1, Takada Kazuya 2, Koukitu Akinori 1 |
| | | Lunch 13:00`14:00 | |
| 17p-TB - 1`13 |
| 1 | XPS analysis of adducts formed in MOVPE growth of InAlN | Univ. of Fukui 1@*Tanaka Mikiyasu 1, Kanbe Youichi 1, Yamamoto Masamoto 1, Sugita Kenichi 1, Hashimoto Akihiro 1, Yamamoto Akio 1 |
| 2 | Characterization of AlInN epitaxial layer by MOCVD | Nagoya Inst. of tech. 1@*Ichikawa Junki 1,Sakai Yusuke 1,Egawa Takashi 1 |
| 3 | XPS study of In0.17Al0.83N/GaN hetero interface | Hokkaido Univ. 1, CREST-JST 2, NTT Photonics Labs. 3@*Masamichi Akazawa 1,2, Tamotsu Hashizume 1,2, Masanobu Hiroki 3, Shoji Yamahata 3, Naoteru Shigekawa 3 |
| 4 | MOVPE of m-plane Al1-xInxN films on free-standing GaN substrates | IMRAM-Tohoku Univ.@*Chichibu Shigefusa 1, Hazu Kouji 1, and Onuma Takeyoshi 1 |
| 5 | Epitaxial Growth of Semipolar InAlN films on ZnO Substrates | The University of Tokyo 1,2, JST-CREST 3@*Kajima Tomofumi 1, Ueno Kouhei 2, Fujii Tomoaki 2, Kobayashi Atsushi 1, Ohta Jitsuo 2, Fujioka Hiroshi 2,3, and Oshima Masaharu 1,3 |
| ’ | 6 | Fabrication and Characterization of Semipolar AlN/InN Heterostructures | The Univ. of Tokyo 1, 2, JST-CREST 3@*Tomoaki Fujii 1, Atsushi Kobayashi 2, Jitsuo Ohta 1, Masaharu Oshima 2, 3, Hiroshi Fujioka 1, 3 |
| | | Break 15:30`15:45 | |
| 7 | Strain relaxation of InGaN thin film grown on m-GaN | Tohoku Univ. 1, JST-CREST 2@*Hanada Takashi 1, Shimada Takaaki 1, Ji Siyang 1, Hobo Kenji 1, Liu Yuhuai 1 2, Matsuoka Takashi 1 2 |
| 8 | CL characterization of InGaN grown by RF-MBE toward investigation of the mechanism for In mole fluctuation
| Ritsumeikan Univ., Dept. of Photonics1, Res. Org. of Sci. & Eng.2, Seoul National Univ.3@*Takuya Kimura1,Eita Fukumoto1,Tomohiro Yamaguchi2,Ke Wang2,Masamitsu Kaneko2,Akifumi Takeda1,Tsutomu Araki1,Yasushi Nanishi1,3
|
| £ | 9 | Efffects of GaN Template on MOVPE Growth of InGaN Epilayer | IMR, Tohoku Univ. 1, JST-CREST@2@S.Y. Ji@1, K. Hobo@1, Y.H. Liu@1,2, V. Suresh Kumar1, Y.T. Zhang@1,2, H. Shindo@1, R. Katayama@1,2, T. Matsuoka@1,2
|
| £ | 10 | Influence of V/III ratio on InGaN Growth by MOVPE | IMR, Tohoku Univ. 1, JST-CREST 2@V. Suresh Kumar 1, S.Y. Ji 1, K. Hobo 1, Y.H. Liu 1,2, H. Shindo 1, M. Wakaba 1, T. Matsuoka 1,2 |
| 11 | Ab initio study of local configurations of InGaN on GaN(0001) | Toshiba Corp.1@Muneyuki Tsuda 1, Hidehiko Yabuhara 1 |
| 12 | Correlation between PL characteristics and nanostructures in GaInN MQWs on Si substrates | Shibaura Inst. of Tech. 1,Nagoya Inst. of Tech. 2@*Hiroyasu Ishikawa 1,Naoto Mori 2 |
| 13 | Crystal Growth of cubic InN and InGaN on YSZ(001) substrate by RF-MBE | Dept of Advanced Material Science The University of Tokyo 1,@*Nakamura Keito 1, Kakuda Masahiro 1, Ishida Takashi 1, Kuboya Shigeyuki 1, Katayama Ryuji 1, Onabe Kentarou 1, |
| 15.4 III-V Nitride Epitaxial Growth |
| March 17 10:00`17:30 |
| 17a-TC - 1`11 |
| 1 | N-polar 1ML-InN/GaN Quantum Nanostructure Grown by RF-MBE | Graduate School of Engineering Chiba Univ. 1, VBL Chiba Univ. 2@Otomura Hiroki 1, Kusakabe Kazuhide 1 2, Ueda Atsushi 1, Kambayashi Ryo 1,
Nagura Akinori 1, Ishitani Yoshihiro 1 2, Yoshikawa Akihiko 1 2
|
| 2 | Precise Control of Growth Process of Ultra-thin InN/GaN Quantum Wells (1)
- Consideration based on in-situ monitoring via spectroscopic ellipsometry and TEM analysis - | Graduate School of Engineering, Chiba Univ. 1,VBL, Chiba Univ. 2@*Hashimoto Naoki 1, Hwang Eun Sook 1, Kusakabe Kazuhide 1,2, Ishitani Yoshihiro 1,2, Yoshikawa Akihiko 1,2 |
| 3 | Precise Control of Growth Process of Ultra-thin InN/GaN Quantum Wells (2)
- Spatially resolved cathodoluminescence characterization - | Graduate School of Engineering, Chiba Univ. 1,VBL, Chiba Univ. 2@*Hwang Eun Sook 1, Hashimoto Naoki 1, Kusakabe Kazuhide 1,2, Ishitani Yoshihiro 1,2, Yoshikawa Akihiko 1,2 |
| 4 | Growth of InN on MgO(111) substrate by RF-MBE | Waseda Univ. WIAS 1, Waseda Univ. 2, ZAIKEN 3, CREST 4@*Kawaharazuka Atsushi 1 2 3 4, Horikoshi Yoshiji 2 3 4 |
| 5 | Dislocation reduction via selective-area and epitaxial lateral overgrowth of InN structures by RF-MBE | Sophia Univ. 1, Sophia Nanotech. RC 2, CREST JST 3@*Kamimura Jumpei 1,3, Kishino Katsumi 1,2,3, Kamiyama Kouichi 1, Kikuchi Akihiko 1,2,3 |
| | | Break 11:15`11:30 | |
| 6 | Optimization of growth condition of LT-InN buffer for A-plane InN growth | Ritsumeikan Univ., Dept. of Photonics 1, Res. Org. of Sci. & Eng. 2, Seoul National Univ. 3@*Tsutomu Araki 1, Keisuke Kawashima 1, Tomohiro Yamaguchi 2, Yasushi Nanishi 1,3 |
| ’ | 7 | Effects of M-plane GaN underlayer for M-plane InN low temperature buffer layer
on LiAlO2 (100) substrate. | Ritsumeikan Univ., Dept. of Photonics 1, Res. Org. of Sci. & Eng. 2, Seoul National Univ. 3@*Kagawa Kazuaki 1,Tomohiro Yamaguchi 2,Araki Tutomu 1,Yasushi Nanishi 1 3 |
| 8 | InN growth on HOPG substrate by RF-MBE | School of Eng Univ of Fukui@Shimotsuji Yasuhiro, Kotake Hiromichi, Hounoki Hironori, Yamamoto Akio, Hashimoto Akihiro |
| 9 | Pressure Effects on Growth Phase Digram of InN grown by MOVPE | IMR, Tohoku Univ. 1, JST-CREST 2, JST-PREST 3@Yuhuai Liu1,2, Takeshi Kimura1,2, Yuantao Zhang1,2, Masaki Hirata1, Shiyang Ji1, Ryuji Katayama1,2,3, Takashi Matsuoka1,2 |
| 10 | MOVPE growth of InN using dimethylhydrazine as the nitrogen source (4) | Dept. of Advanced Materials Science, Tokyo Univ.@Q.T.Thieu, T.Tachikawa, T.Kikuchi, Y.Seki, S.Kuboya, K.Onabe |
| 11 | Single crystal growth of LaBGeO5 as substrate material for InN epitaxy | Waseda Univ. 1,Waseda Research Inst, Mat.Sci.&Eng. 2,IMR, Tohoku Univ. 3,JST-CREST 4@*Ichikawa Satoru 1,Kanamori Toshiki 1,Miyazawa Shintaro 2,4,Nakae Hideo 1,4,S.Y. Ji 4,Y.H. Liu 3,4,Matsuoka Takashi 3,4 |
| | | Lunch 13:00`14:00 | |
| 17p-TC - 1`13 |
| 1 | Influence of NH3 input partial pressure modulation on the HVPE growth of InN on (0001) sapphire substrate | Dept. of Appl. Chem., Tokyo Univ. of Agri. & Tech.@Higashikawa Yoshihiro 1, Otake Aya 1, Adachi Hirokazu 1, Togashi Rie 1, Murakami Hisashi 1, Kumagai Yoshinao 1, Koukitu Akinori 1 |
| 2 | Polarity dependent InN growth on freestanding GaN substrates by hydride vapor phase epitaxy | Tokyo Univ. of Agri. & Tech. 1@*Togashi Rie 1, Adachi Hirokazu 1, Murakami Hisashi 1, Kumagai Yoshinao 1, Koukitu Akinori 1 |
| 3 | Photoluminescence properties of Mg-doped N-polar InN | Graduate School of Electrical and Electronic Engineering Chiba Univ 1,VBL Chiba Univ 2,@*Imai Daichi 1,Ishitani Yoshihiro 1 2,Fujiwara Masayuki 1,Yoshikawa Akihiko 1 2, |
| £ | 4 | Adsorption and desorption of indium adlayer on GaN surface | Ritsumeikan Univ., Res. Org. of Sci. & Eng. 1, Dept. of Photonics 2, Seoul National Univ. 3@*Ke Wang 1, Tomohiro Yamaguchi 1, Tsutomu Araki 2, Yasushi Nanishi 2,3 |
| 5 | Investigation of surface chemical structures of C-plane, A-plane and M-plane InN | Ritsumeikan Univ., Dept. of Photonics 1, Res. Org. of Sci. & Eng. 2 , Seoul National Univ.3@*Takagi Toshiki 1, Kaneko Masamitsu 2, Yamaguchi Tomohiro 2, Araki Tsutomu 1, Nanishi Yasushi 1,3 |
| 6 | Evaluation of InN bulk by hard X-ray photoemission spectroscopy | Ritsumeikan Univ. Res. Org. Sci. & Eng. 1, NIMS 2, Ritsumeikan Univ. Dept. of Photonics 3, Seoul National Univ. 4@*Kaneko Masamitsu 1, Yamaguchi Tomohiro 1, Imura Masataka 2, Yamashita Yoshiyuki 2, Nanishi Yasushi 3 4 |
| | | Break 15:30`15:45 | |
| 7 | Observation of two dimensional electron gases around InN/InGaN interfaces by infrared spectroscopy | Graduate School of Engineering Chiba Univ. 1,VBL Chiba Univ. 2@*Tanaka Hirokazu 1,Masuda Shotaro 1,Fujiwara Masayuki 1,Ishitani Yoshihiro 1.2,Kusakabe Kazuhide 1.2,Yoshikawa Akihiko 1.2
|
| 8 | Electron effective mass of InN determined by magneto-plasma reflection | Tokai Univ. 1, Sokendai 2, Inst. Mol. Sci. 3, Univ. Fukui 4@Takashi Inushima 1, Takuya Iizuka 2, Shin-ichi Kimura 2,3 Kazutoshi Fukui 4 |
| 9 | Microstructure in High Al Concentration AlGaN Layers Grown by MOVPE on an AlN(0001) Template
| Kyushu Uinv. 1, Mie Univ. 2@*Kuwano Noriyuki 1, Kurogi Takuya 1, Fujita Tomoaki 1, Shimahara Yuki 2, Taketomi Hiroyuki 2, Miyake Hideto 2, Hiramatsu Kazumasa 2 |
| 10 | MOVPE growth and optical characterization of Si-doped AlGaN | Mie Univ. 1, HAMAMATSU PHOTONICS K.K. 2@*Yuki Shimahara 1, Hiroyuki Taketomi 1,Hideto Miyake 1, Kazumasa Hiramatsu 1, Fumitsugu Fukuyo 2, Tomoyuki Okada 2, Hidetsugu Takaoka 2, Harumasa Yoshida 2 |
| ’ | 11 | Time-resolved Photoluminescence of Al-rich AlGaN/AlN Multiple Quantum Wells under Selective Excitation | Kyoto Univ. 1@*Iwata Yoshiya 1,Oto Takao 1,Kaneta Akio 1,Banal Ryan 1,Funato Mitsuru 1,Kawakami Yoichi 1 |
| ’ | 12 | Time Evolution of Photoluminescence and Analysis of Emission Mechanisms around the Mott Transition in Al0.79Ga0.21N/AlN Multiple Quantum Wells | Kyoto Univ. 1@*Oto Takao 1,Iwata Yoshiya 1,Kaneta Akio 1,Banal Ryan 1,Funato Mitsuru 1,Kawakami Yoichi 1 |
| 13 | Surface Plasmon Enhanced Internal Quantum Efficiency of Al-rich AlGaN/AlN Multiple Quantum Wells
| Kyoto Univ. 1@*Takada Akihiko 1, Oto Takao 1, Banal Ryan 1, Okamoto Koichi 1, Funato Mitsuru 1, Kawakami yoichi 1 |
| 15.4 III-V Nitride Epitaxial Growth |
| March 18 10:00`18:45 |
| 18a-TA - 1`10 |
| 1 | GaN growth on a 6 inch sapphire substrate by using MOCVD with the ultrathin reactor under atmospheric pressure | Japan Pionics 1@*Takaki Ryohei 1,Iso Kenji 1,Ishihama Yoshiyasu 1,Takahashi Yuzuru 1 |
| 2 | Growth of GaN using Catalyst-Assisted MOVPE | Univ. of Fukui 1@*Sasamoto Kohei 1,Morikawa Takashi 1,Hashimoto Akihiro 1,Yamamoto Akio 1 |
| 3 | Consumption mechanism of precursors under AlGaN-MOVPE | Tokyo Univ. of Science@Kenichi Nakamura 1, Akira Hirako 1, Kazuhiro Ohkawa 1 |
| 4 | Dependence of spiral and nucleus growth rates of GaN films on the degree of supersaturation | NTT Basic Research Labs. 1@*Akasaka Tetsuya 1, Kobayashi Yasuyuki 1, Kasu Makoto 1 |
| | | Break 11:00`11:15 | |
| 5 | Radiative and nonradiative recombination dynamics in InGaN single quantum wells | Yamaguchi Univ. 1, Mitsubishi Chemical Crop. 2@Sudo Yasuhiro 1, Kohno Takakazu 1, Shibano Ryota 1, Yamada Yoichi 1, Taguchi Tsunemasa 1, Kudo Hiromitsu 2, Okagawa Hiroaki 2 |
| 6 | Visualization of the carrier dynamics of InGaN/GaN SQW using Dual-probe SNOM. | Kyoto Univ. 1@*Hashimoto Tsuneaki 1,Nishimura Katsuhito 1,Kaneta Akio 1,Funato Mitsuru 1,Kawakami Yoichi 1 |
| 7 | Carrier lifetime measurements in a 400nm-band GaInN semiconductor optical amplifier | NICHe, Tohoku Univ. 1, Advanced Materials Labs., Sony Corp. 2@Kyosuke Saito 1, *Shunsuke Kono 1, Rintaro Koda 2, Hideki Watanabe 2, Takao Miyajima 2, Masaru Kuramoto 1,2, Hiroyuki Yokoyama 1 |
| ’ | 8 | Optical pumped green-range stimulated emission from regularly arranged InGaN/GaN MQW nanocolumns | Sophia Univ. 1, Sophia Nanotechnology Research Center 2, CREST, JST 3@*Ishizawa Shunsuke 1,2,3, Kishino Katsumi 1,2,3, Sugimoto Shuichi 1, Araki Ryuichi 1, Kikuchi Akihiko 1,2,3 |
| 9 | Optically pumped stimulated emission from GaN nanowalls | Sophia Univ. 1,Sophia Nanotechnology Research Center 2,CREST JST 3,@*Kawana Kenta 1,Kikuchi Akihiko 1,2,3,Ramesh Vadivelu 1,Kishino Katsumi 1,2,3 |
| 10 | Theoretical Investigation of the Strain Dependent Band Structures of Nitride Semiconductors | Univ. of Tsukuba 1@*Yasuhiro Ebihara 1, Kenji Shiraishi 1, Atsushi Yamaguchi 2 |
| | | Lunch 12:45`13:45 | |
| 18p-TA - 1`18 |
| 1 | Photoluminescence dynamics of localized excitons in AlGaN epitaxial layers | Yamaguchi Univ. 1, Mie Univ. 2@Kittaka Ryo 1, Murotani Hideaki 1, Yamada Yoichi 1, Taguchi Tsunemasa 1, Miyake Hideto 2, Hiramatsu Kazumasa 2 |
| ’ | 2 | Composition dependence of luminescence polarization in AlGaN epitaxial layers | Yamaguchi Univ. 1, Mie Univ. 2@*Murotani Hideaki 1, Kittaka Ryo 1, Yamada Yoichi 1, Taguchi Tsunemasa 1, Miyake Hideto 2, Hiramatsu Kazumasa 2 |
| 3 | Biexciton luminescence from AlGaN-based quantum wells by scanning near-field optical microscopy | Yamaguchi Univ. 1, Panasonic Corp. 2@Umezawa Kyohei 1, Kobayashi Eiji 1, Hironaka Hideo 1, Yamada Yoichi 1, Taguchi Tsunemasa 1, Ishibashi Akihiko 2, Kawaguchi Yasutoshi 2, Yokogawa Toshiya 2 |
| £ | 4 | Photoluminescence Properties of Al-rich Al1-xGaxN/AlN Single Quantum Wells | Kyoto Univ. 1@*Ryan Banal,Takao Oto,Funato Mitsuru,Kawakami Yoichi |
| 5 | Fabrication of AlN/GaN Multi Quantum Wells at 770?C by Metal Organic Vapor Phase Epitaxy Using Pulse Injection Method and Observation of Intersubband Transition at 1.55 um | School of Engineering, The Univ. of Tokyo 1, RCAST, The Univ. of Tokyo 2@*Yang Jungseung 1, Hassanet Sodabanlu 1, Sugiyama Masakazu 1, Nakano Yoshiaki 1,2, Shimogaki Yukihiro 1 |
| 6 | Picosecond time-resolved spectroscopy of nitride semiconductors using pulsed electron beams (1) - Pulsed electron beam generation and application to GaN - | IMRAM-Tohoku Univ. 1, WPI-AIMR-Tohoku Univ. 2@*Chichibu Shigefusa 1, Onuma Takeyoshi 1, Hazu Kouji 1, Kagamitani Yuji 1, Ishiguro Tohru 1, Fukuda Tsuguo 2 |
| 7 | Picosecond time-resolved spectroscopy of nitride semiconductors using pulsed electron beams (2) -TRPL and TRCL studies on AlN epilayers grown by MOVPE - | IMRAM-Tohoku Univ. 1@*Onuma Takeyoshi 1, Chichibu Shigefusa 1 |
| | | Break 15:15`15:30 | |
| 8 | Picosecond time-resolved spectroscopy of nitride semiconductors using pulsed electron beams(3) -TRCL of high AlN molar fraction AlGaN epilayers grown by MOVPE - | IMRAM-Tohoku Univ. 1@*Hazu Kouji 1, Onuma Takeyoshi 1, Chichibu Shigefusa 1 |
| 9 | Picosecond time-resolved spectroscopy of nitride semiconductors using pulsed electron beams (4)
-Time and spatially-resolved CL of m-plane InGaN grown by MOVPE- | IMRAM-Tohoku Univ. 1, Ecole Polytechnique F?d?rale de Lausanne 2@*Kagaya Munehito 1, Corfdir Pierre 2, Gani?re Jean-Daniel 2, Deveaud-Pl?dran Beno?t 2, Grandjean Nicolas 2, Chichibu Shigefusa 1 |
| ’ | 10 | Anomalous optical anisotropy for nonpolar and semipolar GaN/AlGaN QWs predicted from the definite breakdown of the quasi-cubic approximation in GaN | Dept. Electron. Sci. & Eng., Kyoto Univ.@*Ishii Ryota 1, Kaneta Akio 1, Funato Mitsuru 1, Kawakami Yoichi 1 |
| 11 | Relation between inhomogeneous broadening and optical polarization in non-c-plane InGaN quantum wells | Kyoto Univ. 1CKanazawa Inst. Tech. 2@*Kazunobu Kojima 1, Atsushi A. Yamaguchi 2, Mitsuru Funato 1, Yoichi Kawakami 1, Susumu Noda 1 |
| 12 | Effects of breaking of quasi-cubic symmetry on polarization properties in non-c-oriented InGaN quantum wells | Kanazawa Inst. Tech. 1, Kyoto Univ. 2@*Atsushi A. Yamaguchi 1, Kazunobu Kojima 2 |
| | | Break 17:00`17:15 | |
| 13 | Alternative Model to QCSE Model in AlGaN/GaN MQW | ISIR, Osaka Univ. 1, Yokohama National Univ. 2@*Shuichi Emura 1, Hannes Raebiger 2, Hajime Asahi 1 |
| 14 | Optical polarization properties of m-plane InGaN films grown on ZnO substrates | The University of Tokyo 1, 2, 3, JST-CREST 4@*Tamaki Hiroaki 1, Kobayashi Atsushi 2, Ohta Jitsuo 3, Fujioka Hiroshi 3, 4 , Oshima Masaharu 2, 4 |
| 15 | Proposal of Polarization Charge-Embedded GaN-based Channel Structures | NTT Photonics Labs.@Maeda Narihiko 1, Hiroki Masanobu 1, Yamahata Shoji 1 |
| ’ | 16 | Fabrication of periodically poled GaN structure on N-polar GaN templates | The Univ. of Tokyo 1, Tohoku Univ. 2, JST-PRESTO 3@Yujiro Fukuhara 1, Ohara Yuki 1, Ryuji Katayama 2,3, Kentaro Onabe 1 |
| 17 | Influence of remote plasma treatments on emission from InGaN | Okayama Univ. 1@*Toshiaki Takenaka 1,Yoichi Kamiura 1,Takeshi Ishiyama 1,Yoshifumi Yamashita 1 |
| 18 | Surface morphologies and PL characteristics for photoelectrochemical etched n-GaN | University of Electro-Communications 1, TNEMC Ltd. 2@Saito Yasuhiro 1, Kobayashi Naoki 1, Yamamoto Jun 2, Ban Yuzaburo 2, Matsumoto Koh 2 |
| 15.4 III-V Nitride Epitaxial Growth |
| March 18 10:00`18:45 |
| 18a-TC - 1`11 |
| ’ | 1 | Selective growth of high-quality GaN nanowires by MOCVD | IIS 1, NanoQuine 2, Univ. of Tokyo@*Choi Kihyun 1, Arita Munetaka 2, Arakawa Yasuhiko 1,2 |
| 2 | A Significance of Supersaturation on the Catalyst-free MOCVD Growth of GaN nanowires | NanoQuine Univ. of Tokyo 1, IIS Univ. of Tokyo 2@Arita Munetaka 1, Choi Kihyun 2, Arakawa Yasuhiko 1,2 |
| 3 | Self-assembled Growth of GaN Quantum Dots on AlN Mesas Fabricated by MOCVD | Nanoquine Univ. of Tokyo 1, IIS Univ. of Tokyo 2@Arita Munetaka 1, Yang Xuelin 1, Arakawa Yasuhiko 1,2 |
| 4 | Control of crystal orientation in GaN by using polytypism | Tohoku Univ. 1, Kyunghee Univ. 2, Korea Maritime Univ. 3@Lee Hyunjae 1, Kim Chinkyo 2, Chang Jiho 3, Fujii Katsushi 1, Goto Takenari 1, Yao Takafumi 1 |
| 5 | Growth of InGaN/GaN multi quantum wells on relaxed InGaN | Grad. School of Sci. & Eng., Yamaguchi Univ. 1@*Miyatake Takaaki 1,Fujita Daisuke 1,
Shinagawa Taku 1,Li Bocheng 1,Okada Narihito 1,Tadatomo Kazuyuki 1 |
| | | Break 11:15`11:30 | |
| £ | 6 | Formation of Semipolar and Nonpolar Facet Structures of AlN Grown on Patterned SiC Substrate by Metal Organic Chemical Vapor Deposition | NanoQuine, Univ. of Tokyo 1, IIS, Univ. of Tokyo 2@Yang Xuelin 1, Arita Munetaka 1, Arakawa Yasuhiko 1,2 |
| ’ | 7 | Selective MOVPE growth of non c-plane InGaN/GaN MQW on patterned Si substrate | Nagoya Univ. 1, Akasaki Research Center 2@*Tanikawa Tomoyuki 1,2, Honda Yosio 1,2, Masahito Yamaguchi 1,2 |
| 8 | Growth of (11-22) GaN on patterned r-plane sapphire substrate with wide terrace | Grad. School of Sci. & Eng., Yamaguchi Univ. 1@*Kurisu Akihiro 1,Murakami Kazuma 1,Abe Yuki 1,Shinagawa Taku 1,Okada Narihito 1,Tadatomo Kazuyuki 1 |
| 9 | Epitaxial selective lateral overgrowth of semipolar (10-11) GaN from c-plane sapphire sidewall of patterned n-plane sapphire substrate | Grad. School of Sci. & Eng., Yamaguchi Univ. 1,KYOCERA Corporation 2@*Takami Masaki 1,Kurisu Akihiro 1,Murakami Kazuma 1,Okada Narihito 1,Tadatomo Kazuyuki 1,Umehara Motohiro 2,Ihara Toshiyuki 2,Tubokura Satoru 2,Hujita Wataru 2 |
| 10 | Growth of nonpolar GaN on m-plane maskless patterned sapphire substrate | Grad. School of Sci. & Eng., Yamaguchi Univ. 1@*Oshita Hiroyasu 1,Abe Yuki 1,Murakami Kazuma 1,Okada Narihito 1,Tadatomo Kazuyuki 1 |
| ’ | 11 | Selective Area Growth of GaN from Sapphire Sidewall of Patterned Sapphire Substrate with Nitridation | Grad. School of Sci. & Eng., Yamaguchi Univ.@Narihito Okada 1, Hiroyasu Oshita 1, Akihiro Kurisu 1, Yuji Kawashima 1, Kazuyuki Tadatomo 1 |
| | | Lunch 13:00`14:00 | |
| 18p-TC - 1`17 |
| 1 | Growth of Si-doped boron nitride on sapphire substrate by flow-rate modulation epitaxy | NTT BRL 1@*Kobayashi Yasuyuki 1, Akasaka Tetsuya 1 |
| 2 | Fabrication of AlN single crystal particles by chemical vapor method using aluminum chloride | Research Inst. of Electronics, Shizuoka Univ. 1@*Mori Tatsuhiro 1,Kobayashi Takayoshi 1,Kawanishi Yasumasa 1,Kominami Hiroko 1,Nakanishi Yoichiro 1,Hara Kazuhiko 1 |
| 3 | Crack-free AlGaN layers grown on Si substrates by AlN void formation | R-GIRO, Ritsumeikan Univ.@Takeuchi Misaichi 1, Hayashi Youhei 2, Araki Tsutomu 2, Nanishi Yasushi 2, Aoyagi Yoshinobu 1 |
| 4 | Heteroepitaxial growth mechanism of hexagonal AlN (0001) on cubic Diamond (111) | NTT Basic Research Lab. 1@*Hirama Kazuyuki 1, Taniyasu Yoshitaka 1, Kasu Makoto 1 |
| 5 | Band-edge electroluminescence from n-AlN/p-diamond heterojunction diodes | NTT Basic Research Lab. 1@*Hirama Kazuyuki 1, Taniyasu Yoshitaka 1, Kasu Makoto 1 |
| ’ | 6 | Interface control on MOVPE growth of AlN on sapphire | Mie Univ. 1@*Miyagawa Reina 1, Miyake Hideto 1, Hiramatsu Kazumasa 1 |
| | | Break 15:30`15:45 | |
| £ | 7 | High-quality AlN-template grown on patterned sapphire substrates using metal organic chemical vapor deposition (MOCVD) | UV Craftory Co., Ltd. 1
Meijo Univ. 2
@*Kim Myunghee 1,2, Fukahori Shinya 1,2, Inazu Tetsuhiko 1,2, Pernot Cyril 1,2, Fujita Takehiko 1,2, Nagasawa Yosuke 1,2, Hirano Akira 1,2, Ippommatsu1, Iwaya Motoaki 2, Kamiyama Satoshi 2, Amano Hiroshi 2, Akasaki Isamu 2
|
| 8 | P-type Conduction Control of Mg-doped AlN and AlGaN | NTT Basic Research Laboratories@*Taniyasu Yoshitaka 1, Kasu Makoto 1 |
| ’ | 9 | Growth of AlN on ZnO (1-102) substrates with self-aligned nanostripe structures (II) | The University of Tokyo 1,2, JST-CREST 3@Kohei Ueno 1, Atsushi Kobayashi 2, Jitsuo Ohta 1, Hiroshi Fujioka 1,3 |
| ’ | 10 | Realization of Initial Layer-by-Layer growth and Reduction of Threading Dislocation Density by Ga Pre-Irradiation in Molecular-Beam Epitaxy of 2H-AlN on 6H-SiC (0001) | Kyoto Univ. 1, Kyoto Univ. PESEC 2@Hironori Okumura 1, Tsunenobu Kimoto 1,2, Jun Suda 1 |
| 11 | Epitaxial growth of Al layers by MBE and their application to the substrates for group III nitride growth | Kogakuin Univ@*Hayashi Masato, Goto Taiga, Igaki Tatsuhiro, Taguchi Satoru, Honda Toru |
| 12 | Homoepitaxial growth of AlN on high-quality AlN substrates fabricated by nitriding sapphire | The University of Tokyo 1, JST-CREST 2, IMRAM Tohoku Univ. 3@Kohei Ueno 1, Jitsuo Ohta 1, Hiroshi Fujioka 1,2, Hiroyuki Fukuyama 3 |
| | | Break 17:15`17:30 | |
| 13 | in-situ measurement of nitrogen atom flux from nitrogen plasma source of RF-MBE | Doshisha Univ. 1, Arios Inc. 2@Ohachi Tadashi 1, Yamabe Nobuhiko1, Ariyada Osamu2 |
| 14 | Interface reaction epitaxy of 2H-AlN/b-Si3N4/Si(111) for the rf-MBE growth | Doshisha Univ. 1@N. Yamabe 1, K. Ohkusa 1, T. Ohachi 1 |
| 15 | Growth of 2 inch AlGaN single-crystalline layer by UHV sputtering method(?) | Tokyo Denki Univ 1, Bruker AXS K.K. 2@*Sagae Kosuke 1, Oyamada Yuki 1, Hashimoto Tomokazu 1, Yanagisawa Tomohito 1, Shinoda Hiroyuki 1, Mutsukura Nobuki 1, Morioka Hitoshi 2, Saito Keisuke 2 |
| 16 | Growth of 2 inch AlGaN single-crystalline layer by UHV sputtering methodiVIIj | Tokyo Denki Univ 1, Bruker AXS K.K. 2@*Ochikubo Takashi 1, Inoue Daisuke 1, Takao Akira 1, Yanagisawa Tomohito 1, Shinoda Hiroyuki 1, Mutsukura Nobuki 1, Morioka Hitoshi 2, Saito Keisuke 2 |
| 17 | Influences of Ambient Nitrogen Pressure on Crystallographic Properties of Cubic AlN Films Fabricated by Pulsed Laser Deposition | SAGA-LS 1,γεH 2@*Kazushi Sumitani 1,Ryota Ohtani 1,Tomohiro Yoshida 2,Satoshi Mohri 2,Tsuyoshi Yoshitake 2 |
| 15.4 III-V Nitride Epitaxial Growth |
| March 19 10:00`18:45 |
| 19a-TB - 1`10 |
| 1 | Molecular beam epitaxy growth of Be and Si co-doped GaN and its characterization | Osaka Univ. ISIR@*Yukawa Fumio 1, Hayashi Seiichi 1, Hasegawa Shigehiko 1, Asahi Hajime 1 |
| 2 | TEM Observation of Re-Grown GaN on Nano-Patterned GaN Template | The Univ. of Tokushima 1, SCIVAX Corp. 2@Katsushi Nishino 1, Yuusuke Sawai 1, Yuji Nariyuki 1, Takeshi Noda 1, Yoshiki Naoi 1, Shiro Sakai 1, Atsuyuki Fukano 2, Satoru Tanaka 2 |
| 3 | Study of growth conditions for selective growth and lateral growth of GaN by RF-MBE | Meijo Univ.1@*Yuki Nagae,Yuki Osawa,Shigeya Naritsuka,Takahiro Maruyama |
| 4 | Effects of using low temperature MEE buffer layer in m-plane GaN growth on ZnO substrate | Univ. of Fukui 1@* Hironori Hohnoki 1, Yasuhiro Shimotsuji 1, Hiroyuki Tabata 1, Akio Yamamoto 1, Akihiro Hashimoto 1 |
| 5 | Observation of the Early Stage of the MOCVD Grown GaN Thin Films on Patterned Sapphire Substrate (PSS)
| Nippon Inst. of Technol. 1,Epitec, Inc. 2@Kawakami hiroshi 1,Kikuchi Toshiki 1,*Matsumune Yuji 1,Toshimasa Suzuki 1,2 |
| | | Break 11:15`11:30 | |
| 6 | Motion of Threading Dislocations inside Crystal during Growth of GaN Thin Film | Kyushu Univ. 1@*Kuwano Noriyuki 1 |
| 7 | Growth of GaN on high quality carbon films synthesized from BNTCA-BPTA polymer | The University of Tokyo 1, JST-CREST 2, AIST 3, Tokai carbon 4@*T. Kaneko 1, J. Ohta 1, H. Fujioka 1, 2, J. Yamashita 3, H. Hatori 3, M. Kodama 3, T. Hirasaki 4, and H. Ue 4 |
| 8 | Fabrication of GaN/(111)Si by compound-souce MBE using RF-N2 plasma souce | Kogakuin Univ. 1@*Takeshi Nagase 1, Takahiro Sakka 1, Masato Hayashi 1, Toru Honda 1 |
| 9 | Growth of GaN thin film on Si(111) cleaned using gas cluster ion beam | Okayama Univ. Sience 1,Hokkaido Inst.Technology 2@*Nakagawa Shunichiro 1,Saito Hiroshi 1,Ohoishi Masakazu 1,Imai Kazuaki 2 |
| 10 | Growth of GaN on Si(111) by RF-plasma-assisted Molecular Beam Epitaxy | Graduate School of Information Science and Technology Hokkaido Univ. 1, RCIQE Hokkaido Univ. 2@Nobuhiro Isomura1, Tamotsu Hasizume2, Junichi Motohisa1 |
| | | Lunch 12:45`13:45 | |
| 19p-TB - 1`18 |
| 1 | Quantum Efficiency of H2 Generation by Photo-excitation of p-GaN Electrode in Water | The Univ. of Electro-Communications 1,
TNEMC Ltd. 2@*Takahito Shimazaki 1, Sadayuki Kikawa 1, Naoki Kobayashi 1, Masahiro Kako 1, Jun Yamamoto 2, Yuzaburo Ban 2, and Koh Matsumoto 2 |
| 2 | Photoelectrochemical Properties of GaN Affected by the Growth Method | CIR Tohoku Univ. 1, MRAM Tohoku Univ. 2@*Fujii Katsushi 1, Kato Takashi 1, Sato Keiichi 1, Koike Kayo 1, Yamada Takahiro 2, Yamane Hisanori 2, Yao Takafumi 1 |
| 3 | N3 Dye adsorption and Sensitization on n-type Gallium Nitride with Surface Nanostructure | Univ. of Electro-communications 1@Kikawa Sadayuki 1, Gonda Tomohiro 1, Kobayashi Naoki 1 |
| 4 | Proposal of High Efficiency 3rd Generation Photovoltaic Cells
with 1ML-InN Quantum Structures
| Graduate School of Engineering Chiba Univ. 1, VBL Chiba Univ. 2@*Kusakabe Kazuhide 1 2, Ishitani Yoshihiro 1 2, Yoshikawa Akihiko 1 2 |
| £ | 5 | Growth and characterization of thick InxGa1-xN films for photovoltaic application | NIMS 1, Tsukuba Univ. 2@*Mickael Lozacfh1, 2, K. Watanabe1, S. Ueda1, H. Yoshikawa1, K. Kobayashi1, K. Sakoda1,2 and M. Sumiya1 |
| 6 | Characteristics and growth of InGaN films for nitride solar cells | The Univ. of Tokyo 1, JST-CREST 2@Katoh Masaki 1,Tamura Kazuya 1,Inoue Shigeru 1,Ohta Jitsuo 1,Fujioka Hiroshi 1 2 |
| | | Break 15:15`15:30 | |
| 7 | Characterization of nitride-based solar cell | Fac. Sci. & Tech. Meijo Univ. 1@*Yosuke Kuwahara 1, Yasuharu Fujiyama 1, Takahiro Fuji 1, Toru Sugiyama 1, Motoaki Iwaya 1, Satoshi Kamiyama 1, Hiroshi Amano 1, Isamu Akasaki 1 |
| 8 | Fabrication of Ga(Gd)N/AlGaN Triple-barrier Resonant Tunneling Diodes. | Osaka Univ. ISIR@*K. Higashi 1, H. Tani 1, Y.K. Zhou 1, S. Hasegawa 1, H. Asahi 1 |
| 9 | Three Terminal Light Emitting Device Using Rare Earth Doped III-Nitride (3) | Toyohashi Univ. of Tech. 1,ISSRC 2,Japan Atomic Energy Agency(JAEA) 3@*Takayuki Hata 1,Hiroshi Okada 2,Yuzo Furukawa 1 2,Akihiro Wakahara 1 2,Shin-ichiro Sato 3,Takeshi Ohshima 3 |
| 10 | Moth-eye structure applied to ITO electrode | Meijo Univ. Fac. Sci. & Tech.1, EL-SEED Corp.2@H. Sakurai1, T. Kondo2, F. Teramae2, A. Suzuki2,
T. Kitano2, R. Kawai2, M. Iwaya1, H. Amano1, S. Kamiyama1,2,and I. Akasaki1
|
| 11 | The refractive index of mask layer dependence of the extraction efficiency of InGaN Light Emitting Diodes with thick SiOxNy mask | Grad. School of Sci. & Eng., Yamaguchi Univ. 1, CHOSHU INDUSTRY Co., Ltd. 2@*Abe Yuki 1,Okada Narihito 1,Tadatomo Kazuyuki 1,Ibi Kouji 2, Watabe Yoshimi 2 |
| 12 | Characteristics of InGaN-LED grown on YAG(111) substrates | Tokyo Univ.of Science 1, KOITO Manufacturing Co.LTD 2@Akihiro Nomura 1,2,Akira Hirako 1,Kazuhiro Ohkawa 1 |
| | | Break 17:00`17:15 | |
| 13 | Development of High Power AlGaN-based UV LED emitting at 335 and 290nm | UV Craftory Co. Ltd. 1, Meijo Univ. 2@Fujita Takehiko 1, Cyril Pernot 1, Kim Myung-Hee 1, Fukahori Shinya 1, Inazu Tetsuhiko 1, Nagasawa Yosuke 1, Hirano Akira 1, Ipponmatsu Masamichi 1, Iwaya Motoaki 2, Kamiyama Satoshi 2, Amano Hiroshi 2, Akasaki Isamu 2 |
| 14 | Characteristics of high-efficient 300nm-range deep UV-LEDs on AlN Templates | DOWA Electronics Materials Co., Ltd. 1@*Yoshikazu Oshika 1, Tomohiko Shibata 1 |
| 15 | Enhancement in the Efficiency of 250 nm-band AlGaN Deep-UV LEDs by Using a Multiquantum-Barrier Electron Blocking Layer | RIKEN 1, Saitama Univ. 2, JST-CREST 3@*Hirayama Hideki 1,3, Tsukada Yusuke 1,2,3, Maeda Tetsutoshi 1,3, Kamata Norihiko 2,3 |
| ’ | 16 | 10W peak-power picosecond optical pulse generation from a blue-violet triple-sectional self-pulsating laser diode
| Advanced Materials Labs., Sony Corp. 1, NICHe, Tohoku Univ. 2@*Watanabe Hideki 1,Miyajima Takao 1, Kuramoto Masaru 1,2, Ikeda Masao 1,2, Yokoyama Hiroyuki 2 |
| ’ | 17 | High-peak-power optical pulse generation by mode-locking of an external-cavity bi-section GaInN blue-violet laser diode | NICHe Tohoku Univ.1, Advanced Materials Lab Sony Corp. 2@*Tomoyuki Oki1,2, Kyousuke Saito 1, Hideki Watanabe2, Takao Miyajima2, Masaru Kuramoto1,2, Masao Ikeda1,2, Hiroyuki Yokoyama1 |
| 18 | Development of 405 nm GaInN Semiconductor Optical Amplifiers | Advanced Materials Labs. Sony Corp. 1, NICHe Tohoku Univ. 2@*Rintaro Koda 1, Takao Miyajima 1, Tomoyuki Oki 1,2, Hideki Watanabe 1, Masaru Kuramoto 1,2, Masao Ikeda 1,2, Hiroyuki Yokoyama 2 |
| 15.4 III-V Nitride Epitaxial Growth |
| March 19 9:30`12:45 |
| 19a-TC - 1`12 |
| 1 | Crystallographic Properties of 3d Transition Metal doped-GaN films | Kyoto Institute of Technology 1@Fujiwara Y?ki 1,Sonoda Saki 1 |
| 2 | Optical Properties of 3d Transition Metal doped-GaN films | Kyoto Institute of Technology 1@Fujiwara Y?ki 1,Sonoda Saki 1 |
| 3 | Electric Properties of 3d Transition Metal Doped-GaN films | Kyoto Institute of Technology@Fujiwara Y?ki 1,Sonoda Saki 1 |
| 4 | Local Electronic Properties of 3d Transition Metals in GaN films | Kyoto Institute of Technology@Sonoda Saki 1, Fujiwara Yuki 1 |
| 5 | Band Structure of 3d Transition Metal doped-GaN films | Kyoto Institute of Technology@Sonoda Saki 1, Fujiwara Yuki 1 |
| 6 | Electric Properties of 3d Transition Metal Doped-GaN/GaN Junctions | Kyoto Institute of Technology@Sonoda Saki 1, Fujiwara Yuki 1 |
| | | Break 11:00`11:15 | |
| 7 | Ferromagnetic properties in GdN heterostructure | Graduate School of Engineering, Kobe Univ. 1, Molecular Photoscience Research Center, Kobe Univ. 2@*Yoshitomi Hiroaki 1, Kitayama Shinya 1, Kita Takashi 1, Wada Osamu 1, Fujisawa Masashi 2, Ohta Hitoshi 2 |
| 8 | Characterization of electrical properties of dilute magnetic semiconductor GaGdN and GaGdN/AlGaN heterostructures | Osaka Univ. ISIR 1@*Abe Daijiro 1, Kin Masane 1, Hasegawa Shigehiko 1, Asahi Hajime 1 |
| £ | 9 | Structural Studies on the MBE Grown InGaGdN / GaN and InGaN / GaGdN Structures | ISIR, Osaka Univ. 1@*Daivasigamani Krishnamurthy1, Siti Nooraya Md Tawil 1, Kakimi Rina 1, Ishimaru Manabu 1, Emura Syuuichi 1, Hasegawa Shigehiko 1, Asahi Hajime 1 |
| 10 | Growth and characterization of GaGdN/AlGaN MQDisk | Osaka Univ., ISIR 1@*Tambo Hiroyuki 1, Abe Daijiro 1, Zhou Yi-Kai 1, Emura Syuuichi 1, Hasegawa Shigehiko 1, Asahi Hajime 1 |
| 11 | Positron annihilation study on vacancy-type defects in MBE-grown GaCrN films | JAEA 1, Osaka Univ. ISIR 2@*Atsushi Yabuuchi 1, Masaki Maekawa 1, Shigehiko Hasegawa 2, Hajime Asahi 2, Atsuo Kawasuso 1 |
| £ | 12 | RF-MBE Growth and Local Structure Studies around Gd Atoms in InGaGdN Epilayers | ISIR, Osaka Univ.@*SitiNooraya MohdTawil 1, Daivasigamani Krishnamurthy 1, Kakimi Rina 1, Emura Syuuichi 1, Hasegawa Shigehiko 1, Asahi Hajime 1 |
| 15.5 Group-IV Crystals and IV-IV Alloys |
| March 17 14:00`18:00 |
| 17p-TJ - 1`15 |
| | 1 | Formation of Defect-Free GOI (Ge on Insulator) with High-Mobility by SiGe Mixing Triggered Melting Growth
| Kyushu Univ. 1@*Toko Kaoru 1, Tanaka Takanori 1, Ohta Yasuharu 1, Sakane Takashi 1, Yokoyama Hiroyuki 1, Kurosawa Masashi 1, Kawabata Naoyuki 1, Sadoh Taizoh 1, Miyao Masanobu 1 |
| ’ | 2 | Electrical Characteristics of Colossal Single Crystalline GOI with 1 cm Length Formed by SiGe Mixing Triggerd Melting Growth
| Dept. Electronics,Kyushu Univ.@*Ohta Yasuharu,Tanaka Takanori,Toko Kaoru,Miyao Masanobu |
| 3 | Single Crystal Growth of Bent Ge Lines on Insulator
by SiGe-Mixing Triggered Melting Growth | Dept. Electronics, Kyushu Univ. 1@*Sakane Takashi 1, Tanaka Takanori 1, Ohta Yasuharu 1, Toko Kaoru 1, Miyao Masanobu 1 |
| ’ | 4 | SiGe Mixing Triggered Melting Growth with Artificial Single-Crystal Seed
-Orientation Control of GOI (Ge on Insulator)- | Dept.Electronics,Kyushu Univ. 1@*Yokoyama Hiroyuki 1, Kawabata Naoyuki 1, Sakane Takashi 1, Ohta Yasuharu 1, Tanaka Takanori 1, Kurosawa Masashi 1, Toko Kaoru 1, Sadoh Taizoh 1, Miyao Masanobu 1 |
| 5 | Dependence of surface structures of Si(110) substrates on off-angle | Grad. Sch. Eng. Sci., Osaka Univ. 1, Covalent Materials 2@Yamashita Mamoru 1, Yamamoto Akira 1, *Nakamura Yoshiaki 1, Kikkawa Jun 1, Sakai Akira 1, Toyoda Eiji 2, Isogai Hiromichi 2, Sato Motoki 2, Izunome Koji 2 |
| 6 | Strain relaxation of Ge thin lines epitaxially grown on Si substrates | Grad. Sch. Eng. Sci., Osaka Univ. 1, IMEC 2, JASRI/SPring-8 3@Ebihara Kouhei 1,Harada Shinji 1,Kikkawa Jun 1,Nakamura Yoshiaki 1,*Sakai Akira 1, Wang Gang 2,Caymax Matty 2,Imai Yasuhiko 3,Kimura Shigeru 3,Sakata Osami3
|
| 7 | Annealing effects on Ge/SiO2 interface structures in wafer bonded GOI substrates | Osaka Univ. 1, Covalent Materials Co. 2@*Yoshitake Osamu 1, Kikkawa Jun 1, Nakamura Yoshiaki 1, Sakai Akira 1, Toyoda Eiji 2, Isogai Hiromichi 2, Izunome Koji 2 |
| 8 | Electric of wafer-bonded GOI substrates using 4-point-probe pseudo-MOSFET | Osaka Univ.1, Covalent Materials Co.2,@*Nakamura Yoshiaki 1, Iwasaki Yuji 1, Kikkawa Jun 1, Sakai Akira 1, Sato Motoki 2, Toyoda Eiji 2, Izunome Kouji 2
|
| | | Break 16:00`16:15 | |
| 9 | Formation and device application of Ge pile-up layer/SiGe/Si(100) structure | Center for Crystal Science and Technology Univ of Yamanashi 1,Tokyo city Univ 2@*Okumura Keisei 1, Nakagawa Kiyokazu 1,Arimoto Keisuke 1,Yamanaka Junji 1,Satou Motoki 1,Inoue Shigenori 1,Sawano Kentarou 2,Shiraki Yasuhiro 2 |
| 10 | Defect Control by Al2O3-Post Deposition Annealing for SiGe-On-Insulator Fabricated Using Ge Condensation by Dry Oxidation | Interdisciplinary Graduate School of Engineering Sciences, Kyushu Univ.1
Art, Science and Technology Center for Cooperative Research Kyushu Univ.2
@*M. Iyota 1, S. Ikeura1, H. Yang2, D.Wang2, H. Nakashima2 |
| 11 | Relationship between compressive strain in SGOI fabricated by Ge condensation method and substrate structures before oxidation | Tokyo Univ. 1,PRESTO-JST 2@*Tomiyama Kentaro 1,Dissanayake Sanjeewa 1,Takenaka Mitsuru 1,2,Takagi Shin-ichi 1 |
| 12 | Effect of mesa-etching on strain states of uniaxially strained SiGe fabricated by selective ion implantation | Tokyo City Univ. 1,Univ. of Yamanashi 2,Tohoku Univ. 3@*Yusuke Hoshi 1,Kentarou Sawano 1,Atsunori Yamada 1,Sou Nagakura 1,Keisuke Arimoto 2,Noritaka Usami 3,Kiyokazu Nakagawa 2,Yasuhiro Shiraki 1 |
| 13 | Influence of heat treatment on strained-Si1-yCy/Si heterostructures and device characteristics of strained-channel devices | University of Yamanashi 1,Tokyo City University 2,Hitachi Kokusai Electric Inc 3@*Kazutoshi Nagayoshi 1,Shigenori Inoue 1,Akihiro Itou 1,Motoki Satoh 1,Keisuke Arimoto 1,Junji Yamanaka 1,Kiyokazu Nakagawa 1,Kentarou Sawano 2,Yasuhiro Shiraki 2
Atsushi Moriya 3,Yasuhiro Inokuchi 3,Yasuo Kunii 3 |
| 14 | Sb delta-doping into Ge for low-resistivity contact formation and its segregation behavior | Tokyo City Univ. 1, Kyushu Univ. 2, PRESTO JST 3@*K. Sawano 1, Y. Hoshi 1, K. Kasahara 2, K. Yamane 2, K. Hamaya 2,3, M. Miyao 2, Y. Shiraki 1 |
| 15 | Influence of compressive and tensile strain on hole effective mobility | CCST Univ. of Yamanashi 1@*Keisuke Arimoto 1, Kiyokazu Nakagawa 1 |
| 15.6 Group-IV Compounds |
| March 17 |
| 17a-TJ - 1`15 |
| |
Short Presentation (5 min.) 10:00`11:15
17a-TJ - 1`15 @Poster Session 15:30`17:30 |
| £ | 1 | Investigation of a SiC dual-directional sublimation method (D2S Method) by global simulation model | RIAM, Kyushu Univ. 1, AIST 2@*Chen Xuejiang 1, Gao Bing 1, Nakano Satoshi 1, Nishizawa Shin-ichi 2, Kakimoto Koichi 1
|
| £ | 2 | Coupled full compressible multi-phase flow simulation of SiC sublimation growth | RIAM, Kyushu Univ. 1, AIST 2@*Gao Bing 1, Chen Xuejiang 1, Nakano Satoshi 1, Nishizawa Shin-ichi 2, Kakimoto Koichi 1
|
| 3 | Mechanism of Hetero Growth of 3C-SiC on 6H-SiC {0001} by Solution Method | Nagoya Univ.@Seki Kazuaki 1, Alexander 1, Kozawa Shigeta 1, Ujihara Toru 1, Takeda Yoshikazu 1 |
| 4 | Effects of polarity of seed crystal on polytype in SiC solution growth | Nagoya Univ.@*Alexander 1,Seki Kazuaki 1,Kozawa Shigeta 1,Ujihara Toru 1,Takeda Yoshikazu 1 |
| 5 | Defect evaluation of SiC crystal grown by solution method -synchrotron X-ray topography and etching method- | Nagoya Univ. 1@*Kozawa Shigeta 1,Seki Kazuaki 1,Alexander 1,Ujihara Toru 1,Takeda Yoshikazu 1 |
| 6 | Non-destructive measurements of electrical properties of SiC wafer using terahertz wave | Furukawa Co.,Ltd. 1, RIKEN Sendai 2, ECEI Tohoku Univ. 3, Dept. Physics, Tohoku Univ. 4@*Akihide Hamano 1, Akira. Harako 1, Seigo Ohno 2,4, Hiroaki Minamide2, Hiromasa Ito 2,3, Yoshinobu Takatsu 1, Yoshiyuki Usuki 1 |
| 7 | 4H-SiC high dope substrate defect estimate by the molten salt etching | ECOTRON CO.,LTD.@*Hamada Shinkichi 1, Yoshioka Hisashi 1, Kawami Hiroshi 1, Nakamura Nobuhiko 1, Setoguchi Yoshitaka 1, Matsunami Toru 1, Nishikawa Kimito 1, |
| 8 | Evaluation of a-face growth 4H-SiC single crystals by the micro-LFB ultrasonic material characterization system | Tohoku Univ. 1, AIST 2@*Ohashi Yuji 1, Arakawa Mototaka 1, Kushibiki Jun-ichi 1, Kato Tomohisa 2, Okumura Hajime 2 |
| 9 | HR-TEM Obervation of Stacking Faults in 4H-SiC Epitaxial Layers | Ion Technical Center 1, Kyoto Univ. 2@*Aoki Masahiko 1, Kawanowa Hitoshi 1, Feng Gan 2, Kimoto Tsunenobu 2 |
| £ | 10 | Origin of in-grown stacking faults in 4H-SiC epilayers | Kyoto Univ. 1@*Gan Feng 1,Jun Suda 1, Tsunenobu Kimoto 1
|
| 11 | Observation of ultra-fine structure of defects in SiC wafer with nano-sized etch-pit | Kyoto Inst. Tech. 1, Ecotron 2, Hitachi High-Tech. 3@*Isshiki Toshiyuki 1,Hamada Shinkichi 2,Ikeda Takashi 1,Muto Atsushi 3, Konomi Mami 3 |
| ’ | 12 | Dicing of SiC Wafer by Plasma Chemical Vaporization Machining with Wire Electrode | Osaka Univ. 1@*Aida Kohei 1, Sano Yasuhisa 1, Yamamura Kazuya 1, Mimura Hidekazu 1,
Matsuyama Satoshi 1, Yamauchi Kazuto 1 |
| ’ | 13 | Planarization of SiC by catalyst-referred etching and evaluation of the processed surface | Osaka Univ. 1, Ebara Corp. 2@Takeshi Okamoto1, Yasuhisa Sano1, Shun Sadakuni1, Kazuma Tachibana1, Kenta Arima1, Azusa N. Hattori1, Keita Yagi2, Junji Murata1, Yuki Shirasawa1, Kazuto Yamauchi1 |
| 14 | Electrical of SBD on the surface atomic steps | Nagoya Institute of Technology 1, POVAL KOGYO Co.,Ltd. 2 , Fujimi Incorporated 3@*Tanaka Yayoi,Kanda Takashi,Nagatoshi Kazuyuki,Eryu Osamu |
| 15 | Structural characterization of very-low-resistivity Ni-annealed contact on 4H-SiC | FUPET 1, NRC-Nissan Motor 2, ESERL-AIST 3@S. Tanimoto 1,2, M. Miyabe 2, T. Shiiyama 2, T. Suzuki 2, H. Yamaguti 3, S. Nakashima 3, H. Okumura 3 |
| 15.6 Group-IV Compounds |
| March 18 |
| 18a-TJ - 1`15 |
| |
Short Presentation (5 min.) 10:00`11:15
18a-TJ - 1`15 @Poster Session 13:00`15:00 |
| 1 | Defect levels of amorphous SiO2/SiC interface atomic model generated by first-principals molecular dynamics method | JAEA 1, CRIEPI 2@*Atsumi Miyashita 1, Toshiharu Ohnuma 2, Hidekazu Tsuchida 2, Masahito Yoshikawa 1 |
| ’ | 2 | Determination of SiO2/4H-SiC conduction band offset by SR-XPS | Osaka Univ.1, JAEA 2, ROHM CO., LTD 3@*Kirino Takashi 1, Kagei Yusuke 1, Okamoto Gaku 1, James Harries 2, Yoshigoe Akitaka 2, Teraoka Yuden2, Mitani Shuhei 3, Nakano Yuki 3, Nakamura Takashi 3, Hosoi Takuji 1, Shimura Takayoshi 1, Watanabe Heiji 1
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| ’ | 3 | Analysis of P-doped SiO2/4H-SiC(0001) Interface Traps by Thermal Stimulated Current Method | NAIST 1@* Dai Okamoto 1, Hiroshi Yano 1, Shinya Kotake 1, Tomoaki Hatayama 1, and Takashi Fuyuki 1 |
| 4 | Effect of POCl3 anneal on C-face 4H-SiC MOS interface properties | Nara Inst. of Sci. and Technol. 1@*Kotake Shinya 1, Yano Hiroshi 1, Okamoto Dai 1, Hatayama Tomoaki 1, Fuyuki Takashi 1 |
| ’ | 5 | Suppression of flatband voltage instability of 4H-SiC MIS devices
by nitrogen incorporation into Al2O3/SiO2 stacked gate dielectrics | Osaka Univ. 1, ROHM Co., LTD. 2@Kagei Yusuke 1, Kirino Takashi 1, Kozono Kohei 1, Mitani Shuhei 2, Nakamura Yuki 2, Nakamura Takashi 2, Hosoi Takuji 1, Shimura Takayoshi 1, Watanabe Heiji 1 |
| £ | 6 | Nonvolatile-Resistance-Memory Property of SiOx-capped 3C-SiC Ultrathin Films on Si(100) Prepared by Using Monomethylsilane | RIEC Tohoku Univ.1 , Graduate School of Eng. Tokyo Univ. of Agri.& Tech. 2@*Rolando Bantaculo 1, Yuichiro Yamaguchi 2, Eiji Saitoh 1, Hiroyuki Handa 1, Yu Miyamoto 1, Yasushi Suzuki 1, Yoshiyuki Suda 2, Maki Suemitsu 1 |
| ’ | 7 | Evaluation of carrier mobility of MOSFET using 3C-SiC with buried insulating layer (SiC-OI) | Kyushu Inst of Technology Faculty of Engineering 1,@*Makoto Ikeno 1, Takafumi Tanehira 1, Motoi Nakao1 |
| ’ | 8 | C-AFM study on correlation between local dielectric breakdown and substrate surface morphology in 4H-SiC MOS devices
| Osaka Univ. 1 , ROHM CO., LTD 2@*Yusuke Uenishi 1, Kouhei Kozono 1, Shuhei Mitani 2, Yuuki Nakano 2,Takashi Nakamura 2, Takuji Hosoi 1, Takayoshi Shimura 1,Heiji Watanabe 1
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| 9 | Two-dimensional Modeling of Al Ion Implantation Into 4H-SiC | R&D Partnership for Future Power Electronics Technology1,Central Research Lab., Hitachi, Ltd.2@*Mochizuki Kazuhiro 1,2,Yokoyama Natsuki 1,2 |
| 10 | Influence of Electric Field Crowding on Reverse Current-Voltage Characteristics of 4H-SiC Schottky Barrier Diodes | Central Research Laboratory, Hitachi, Ltd. 1@*Hiroyuki Okino 1, Hidekatsu Onose 1, Norifumi Kameshiro 1, Kazuhiro Mochizuki 1, Natsuki Yokoyama 1 |
| 11 | Temperature dependence of shear strength for SiC chips soldered on SiN substrate with Au-Ge | FUPET 1, Nissan Motor 2, Fuji Electric HD 3, Toshiba 4, Sanken Electric 5, AIST 6@*Satoshi Tanimoto 1,2, Kohei Matsui 1,3, Kazuto Takao 1,4, Shinji Sato 1,5, Yoshinori Murakami 1,2, Hiroshi Yamaguti 6 |
| 12 | Irradiation effect of high energy white neutron on SiC Power Diodes | HIREC Corp. 1@*Asai Hiroaki 1, Sugimoto Kenji 1, Nashiyama Isamu 1, Iide Yoshiya 1, Matsuda Mieko 1, Miyazaki Yoshio 1 |
| 13 | Displacement Threshold Energy of Atoms in Al-doped 4H-SiC Epilayer | Osaka Electro-Communication Univ. 1,JAEA 2@Nojiri Takunori 1,Nishino Kozo 1,Yanagisawa Hideki 1,Matsuura Hideharu 1,Onoda Shinobu 2,Ohshima Takeshi 2 |
| 14 | Changes of Acceptor Density in Al-doped 6H-SiC Epilayer by Electron Irradiation or Annealing | Osaka Electro-Communication Univ. 1, JAEA. 2@*Hideki Yanagisawa 1, Kozo Nishino 1, Hideharu Matsuura 1, Shinobu Onoda 2, Takeshi Ohshima 2 |
| 15 | Excess carrier lifetime in electron irradiated p-type 4H-SiC epilaye rs after annealing | Nagoya Inst. of Tech. 1, NAIST 2, JAEA 3@*Kato Masashi 1, Matsushita Yoshinori 1, Ichimura Masaya 1, Hatayama Tomoaki 2, Ohshima Takeshi 3 |
| 15.7 Epitaxial Growth Fundamentals |
| March 20 9:00`10:45 |
| 20a-TS - 1`7 |
| 1 | GaAs(111)B hexagonal-ring reconstruction models examined from first principles | Hokkaido Univ. 1@*Hiroaki Koga 1 |
| 2 | An ab initio-based approach to reconstructions of InAs wetting layer on GaAs(001) substrate | Mie Univ. 1@*Ogasawara Kosuke 1,Akiyama Toru 1,Nakamura Kohji 1 ,Ito Tomonori 1 |
| 3 | Stability of In0.25Ga0.75N surfaces under growth conditions: first-principles calculations | Mie Univ.@*Akiyama Toru, Yamashita Tomoki, Nakamura Kohji, Ito Tomonori |
| 4 | First-Principles-Based Study of Quantum Disks and Chemical Ordering in InGaN/GaN MQW | Tokyo Univ. of Sci.@Kiichiro Mukose 1, Daisuke Mori 1, Masatoshi Sano 1 |
| 5 | Theoretical investigations for the polytypism in SiC | Mie Univ. 1@*Tomonori Ito 1, Tomoyuki Kondo 1, Toru Akiyama 1, Kohji Nakamura 1 |
| 6 | Evaluation Dielectric properties for SixGe1-x using first-princioles caluclation with finite electric fields | The Universuty of Electro-Communications 1@Sato Kohei 1, Osugi Takuya 1, Nakamura Jun 1, Natori Akiko 1 |
| 7 | Lattice-Mismatched Liquid Phase Epitaxial Growth for an 1.3 Κm InGaAs/InGaP Semiconductor Laser for Optical Communications | Keio Univ. 1@*Eri Murata 1, Taro Morikuni 1, Shintaro Hayashi 1, N. Shinichi Takahashi 1 |
| 15.8 Nano-impurities and defects |
| March 20 9:00`14:30 |
| 20a-TW - 1`11 |
| 1 | Vacancy formation energy in Ge-doped Si crystals | I.M.R.,Tohoku Univ. 1,Ghent Univ.@Suezawa Masashi 1,Vanhellemont Jan 2,Yonenaga Ichiro 1 |
| 2 | Observation of Vacancy in Boron doped FZ Silicon Using Ultrasonic Measurements | Graduate School of Science and Technology,Niigata Univ. 1,Center for Quantum Materials Science,Niigata Univ. 2@Baba Shotaro 1,Nagai Yuta 1,Akatsu Mitsuhiro 1,Komatsu Satoru 1,Mitsumoto Keisuke 1,Nemoto Yuichi 1,Kaneta Hiroshi 2,Goto Terutaka 1 |
| ’ | 3 | Evaluation of vacancy in silicon: Ultrasonic measurements of crystalline silicon
with P(VDF/TrFE) piezoelectric transducers II | Graduate School of Science and Technology, Niigata Univ. 1, MTC 2, Center for Inst. Analysis, Univ. of Toyama 3, Center for Quantum Materials Science, Niigata Univ. 4@*Mitsumoto Keisuke 1, Okabe Kazuki 1, Yanase Takashi 2, Akatsu Mitsuhiro 1, Baba Shotaro 1, Nagai Yuta 1, Komatsu Satoru 1, Ono Yasushi 3, Nemoto Yuichi 1, Yamada-Kaneta Hiroshi 4, Goto Terutaka 1 |
| 4 | EPR Study of Fluorine-Vacancy Defects in Silicon | Univ. of Tsukuba 1, JAEA Takasaki 2@*Takahide Umeda 1, Junichi Isoya 1, Takeshi Ohshima 2, Shinobu Onoda 2, Norio Morishita 2 |
| ’ | 5 | First Principles Calculation on Screw Defects at Si(110)/(100) Interface | Okayama Pref. Univ. 1, Covalent Materials Co., Ltd. 2@*Kariyazaki Hiroaki 1, Aoki Tatsuhiko 1,2, Izunome Koji 2, Sueoka Koji 1 |
| 6 | Lifetime of a local vibrations of an impurity in silicon | ISIR, Osaka Univ.@Koun Shirai and Jun Ishisada |
| | | Break 10:30`10:45 | |
| 7 | Diffusion mechanism of contaminated metals in Si crystals analyzed by first principles calculation | Okayama Pref.Univ.,Dept. of System Engineering@*Shigematsu Yoshinori 1, Shiba Seiji 1, Sueoka Koji 1, Nakagawa, Tsuguhiko 1 |
| 8 | First-Principles Calculation for Stable Site of Metal Impurities in Si and Ge | Okayama Pref. Univ., Dept. of System Engineering 1@*Takahiro Maeta 1, Yoshinori Shigematsu 1, Seiji Shiba 1, Koji Sueoka 1 |
| 9 | Iron behavior in silicon under compressive stress | Tokyo Inst. Tech. 1,Shizuoka Inst. Sci. Tech. 2@*Kunifumi Suzuki 1,Masahiro Ichino 2,Koichiro Asahi 1,Yutaka Yoshida 2 |
| ’ | 10 | Quantitative Analysis of Impurities in Solar-Grade Si by Photoluminescence | ISAS/JAXA 1, Meiji Univ. 2@*Takaaki Iwai 1, 2, Michio Tajima 1, Atsushi Ogura 2 |
| ’ | 11 | Phtoluminescence Analysis of Electron Irradiation Effects in Multicrystalline Si | ISAS/JAXA 1,Tokyo Univ. 2,Meiji Univ. 3,Soken Univ. 4@*Kenji Komatsu 1.2,Takaaki Iwai 1.3,Yasuaki Iwata 1.4,Hiroyuki Toyota 1.2,Michio Tajima 1.2 |
| | | Lunch 12:00`13:00 | |
| 20p-TW - 1`6 |
| 1 | Effects of Strain on Penetration of Hydrogen through SiGe Epi-film on Si | Okayama Univ. 1@*Yoshifumi Yamashita 1, Takashi Kobayashi 1, Kazuhisa Yamada 1, Takeshi Ishiyama 1, Yoichi Kamiura 1 |
| 2 | Infrared absorption of low dose irradiated low carbon concentration CZ-Si
(7) Comparison between electron and He
| Tokyo U. Agr.&Tech. 1, Toyota Motor Co. 2, Toyota Central R&D L. 3, Kumamoto@N. Col. Tech. 4, Systems Eng. Co 5, Osaka Pref.U. 6@*Inoue@N.@1,6, Goto Y.@2, Sugiyama T.@3, Oyama H.@4, Sugaya T.@5, Kawamura Y.@6 |
| 3 | Infrared absorption of silicon carbide crystals (2) various material | Tokyo Univ. Agric. & Technol. 1, Systems Engineering. Co. 2, Toyota Motor Co. 3, Osaka Pref. Univ. 4@* Inoue N. 1,4, Suda Y. 1, Iwasaki K. 1, Sugaya T. 2, Goto Y.@3, Kawamura Y. 4 |
| 4 | Impurity doping in Si nanowires by ion-implantation | NIMS 1, JST PRESTO 2 , Inst. of Appl. Phys, Univ. of Tsukuba 3@*N. Fukata 1,2, N. Saito 3, S. Ishida 3, S. Yokono 3, J. Chen 1, T. Sekiguchi 1, S. Hishita 1, and K. Murakami 3
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| 5 | Luminescence properties of nanostructured Si chips | NIMS 1, Univ. Tsukuba 2, Tohoku Univ. 3@*Onodera Hisashi 1,2, Jiwang Yan 3, Sekiguchi Takashi 1,2 |
| 6 | hkl-Dedendence Analysis for Simply Identifying Peak Broadening due to Twist Distribution: Research on Scanning Method | NTT PH Labs. 1, IMR, Tohoku Univ. 2, JST-CREST 3@*Nakashima Kiichi 1, Matsuoka Takashi 2,3 |