| 14 Semiconductors B (Exploratory Materials / Physics / Devices) |
| 14.1 Exploratory Materials Physics |
| March 18 14:00`17:30 |
| 18p-TM - 1`12 |
| |
1 |
Origin on Magnetism of Mn-silicide Nano-particles in Si |
NTT Basic Research Labs. 1, Keio Univ. 2@Kageshima Hiroyuki 1, Yabuuchi Shin 1,2, Ono Yukinori 1, Nagase Masao 1, Fujiwara Akira 1, Ohta Eiji 2 |
| |
2 |
Electrical spin injection and detection in silicon through Fe3Si/Si Schottky tunnel barriers |
Kyushu Univ. 1, PRESTO-JST 2, Kyushu Univ. (INAMORI FRC) 3, Tokyo City Univ. 4@*Kasahara Kenji 1, Ando Yuichiro 1, Hamaya Kohei 1,2, Kimura Takashi 3, Sawano Kentaro 4, Miyao Masanobu 1 |
| 3 | Magneto-optical properties of iron silicide Heusler alloy epitaxial films | Kyoto Univ. 1@*Ikeda Tatsuya 1,@Ichikawa Takayuki 1,@Maeda Yoshihito 1 |
| 4 | Ion channeling at iron silicide Heusler alloy films/Ge(111)interfaces | Kyoto Univ. 1, JAEA ASRC 2, Osaka Univ. 3, Kyushu Univ. 4@Maeda Yoshihito 1,2, Ikeda Tatsuya 1, Narumi Kazumasa 2, Terai Yoshikazu 3, Sadoh Taizoh 4, Hamaya Kohei 4, Miyao Masanobu 4 |
| £ | 5 | Magnetization switching control in Fe3Si/nanocrystalline FeSi2/Fe3Si trilayer films | Dept. of Appl. Sci. for Electr. & Mater., Kyushu Univ. 1,Dept. of electr. Eng., Fukuoka Inst. of Tech. 2@*Hirakawa Shinichi 1,Sakai Kenichiro 1,Takeda Kaoru 2,Yoshitake Tsuyoshi 1 |
| 6 | Fabrication of ferromagnetic resonant-tunneling diodes using Fe3Si/CaF2 heterostructures by selected-area local epitaxy | Inst. of Appl. Phys, Univ. of Tsukuba1, AIST2@K. Sadakuni1, M. Suzuno1, K. Harada1, T. Suemasu1, H. Akinaga2 |
| | | Break 15:45`16:00 | |
| 7 | Effect of Cu or Co doping to the synthesis of ΐ-FeSi2 bulk crystals by molten-salt method | Shizuoka Univ. 1,Shizuoka Univ. RIE 2@*Yamashita Masato 1,Atsumi Takehiko 1,Hayakawa Yasuhiro 2,Tatsuoka Hirokazu 1 |
| 8 | Effect of temperature modulation during solution growth and
observation of growth process of ΐ-FeSi2
| Ibaraki Univ. 1@*Yusuke Ujiie 1, Kzuki Nakamori 1, Shinsuke Mashiko 1, Haruhiko Udono 1 |
| 9 | Surface structure on ΐ-FeSi2 substructure formed by heat-treatment in ultrahigh vacuum | Ibaraki Univ. 1, JAEA 2@*Matsumura Seidai 1, Ochiai Kunihito 1,Udono Haruhiko 1, Esaka Fumitaka 2,Yamaguchi Kenji 2, Yamamoto Hiroyuki 2, Houjou Kiichi 2 |
| 10 | Fabrication of large grain-sized ΐ-FeSi2 films by MicroChannel Epitaxy | Univ. of Tsukuba 1, Kanagawa Ind. Tech. Cent. 2@Mitsushi Suzuno 1, Keiichi Akutsu 1, Hideki Kawakami 1, Kensuke Akiyama 2, Takashi Suemasu 1 |
| 11 | Epitaxial growth of ΐ-FeSi2 films on Si substrates and evaluation of diffusion length by EBIC | Inst. of Appl. Phys., Univ. of Tsukuba 1,NIMS 2@Kawakami Hideki 1,Suzuno Mitsushi 1,Akutsu Keiichi 1,Chen Jun 2,Fuxing Yin 2,Sekiguchi Takashi 2,Suemasu Takashi 1 |
| ’ | 12 | Epitaxial growth and characterization of ΐ-FeSi2 films by atomic hydrogen-assisted molecular beam epitaxy | Univ. of Tsukuba 1@* Akutsu Keiichi 1,SuZuno Mitsushi 1, Kawakami Hideki 1, Suemasu Takashi 1 |
| 14.1 Exploratory Materials Physics |
| March 19 10:00`17:45 |
| 19a-TN - 1`11 |
| 1 | Effect of microstructure on electrical properties of ΐ-FeSi2 thin film | Kanagawa Ind. Tech. Center@*Akiyama Kensuke 1, Kadowaki Teiko 1, Kaneko Satoru 1, Shinohara Toshiro 1, Yasuo Hirabayashi 1 |
| 2 | Microstructures of ΐ-FeSi2 fine crystals grown on an AuCu-deposited Si(001) substrate | Kyushu Univ. 1,Kanagawa Ind. Tech. Center 2@*Kijima Hiroshi 1,Itakura masaru 1,Nishida minoru 1,Akiyama Kensuke 2 |
| 3 | Interface analysis of ΐ-FeSi2 thin films on Si substrate
by scanning transmission electron microscope
| The Wakasa-wan Energy Research Center1
Japan Atomic Energy Agency2@*Sasase Masato1, Yamamoto Hiroyuki2 |
| 4 | Dependence of photoreflectance spectra on growth direction in β-FeSi2 epitaxial films | Osaka Univ. 1,Ibaraki Univ. 2@*Noda Keiichi 1,Terai Yoshikazu 1,Yoneda Keisuke 1,Miura Naoyuki 1,Udono Haruhiko 2, Fujiwara Yasufumi 1
|
| 5 | Low temperature performances of n-type ΐ-FeSi2 / p-type Si (111) heterojunction photodiodes | Kyushu Univ. 1,South Valley Univ. 2@*Shota Izumi 1,Mahmoud Shaban 2,Keita Nomoto 1,Tsuyoshi Yoshitake 1 |
| £ | 6 | Synthesis of Single Phase Ca2Si Powder and Bulk Crystals | Shizuoka Univ. 1@*Wen Cuilian 1, Warashina Yoshifumi 1, Nonomura Tomomi 1, Tatsuoka Hirokazu 1 |
| | | Break 11:30`11:45 | |
| 7 | Thermoelectric properties of novel silicide semiconductors | Shizuoka Univ. 1,Indust. Res. Inst. of Shizuoka Pref. 2, FDK 3@*Nonomura Tomomi 1,Wen Cuillian 1,Yamashita Masato 1,Isobe Kenji 2,Kato Akihiko 3,Tatsuoka Hirokazu 1 |
| 8 | Solution Growth and Characterization of MnSi1.7 | Ibaraki Univ. 1@*Haruhiko Udono 1, Kazuki Nakamori 1 |
| 9 | Synthesis of Mg2Si1-xGex nano-rods on Si substrates | Shizuoka Univ. 1,Kyoto Univ. 2@Yang Qing 1,*=Furuki Hiroki 1,Hara Hideki 2,Suzuki Motoshi 2,Tatsuoka Hirokazu 1 |
| 10 | Synthesis and Characterization of sodium mono silicide | Shizuoka Univ. 1,IMRAM Tohoku Univ. 2@*Shirai Kengo 1,Yamada Takahiro 2,Morito Haruhiko 2,Yamane Hisanori 2,Tatsuoka hirokazu 1 |
| 11 | Fabrication and structural characterization of Nano-structures grown using TEOS | Shizuoka Univ. 1,Shizuoka Univ. RIE 2@*Kukino Hitonori 1 Yang Qing 1 Yasuda Takahito 1 Momose Yosimi 2 Tatuoka Hirokazu 1 |
| | | Lunch 13:00`14:00 | |
| 19p-TN - 1`14 |
| 1 | Schottky contact on Mg2Si substrate | Ibaraki Univ.1, Tsukuba Univ.2@Sekino Kazuyuki 1, Midonoya Makoto 1, Udono Haruhiko 1, Yamada Yoichi |
| ’ | 2 | Formation of n+-BaSi2/p+-Si tunnel junction on Si(111) and photoresponse properties of BaSi2 epitaxial films grown on the n+-BaSi2/p+-Si tunnel junction
| Inst. of Appl. Phys., Univ. of Tsukuba 1, JST-PRESTO 2@*Saito Takanobu 1, Matsumoto Yuta 1, Takeishi Michitoshi 1, Sasaki Ryo 1, Toh Katsuaki 1, Okada Atsushi 1, Suemasu Takashi 1,2 |
| £ | 3 | MBE growth and optical properties of Schottky-type solar cell structure using BaSi2 | Inst. of Appl. Phys., Univ. of Tsukuba 1,JST-PRESTO 2@Yuta Matsumoto 1,Khan Muhammad Ajmal 1,Saito Takanobu 1,Takashi Suemasu 1,2 |
| 4 | Formation of <111>Si layers on AZO/SiO2 and AZO ARC films for BaSi2 solar cells | Univ. of Tsukuba.1,JST-PRESTO.2@Okada Atsushi 1,Sasaki Ryou 1,Matsumoto Yuudai 1,Takeisi Mitsutomo 1,Saitou takamasa 1,Tou katsuaki 1,Suemasu takasi 12 |
| 5 | Epitaxial growth of BaSi2 films on CaF2(111) substrates by molecular beam epitaxy | Inst. of Appl. Phys., Univ. of Tsukuba 1, JST-PRESTO 2, Inst. for Material Res., Tohoku Univ. 3@*Katsuaki Toh 1, Yuta Matsumoto 1, Mitsutomo Takeishi 1, Ryo Sasaki 1, Takanobu Saito 1, Atsushi Okada 1, Takashi Suemasu 1,2 , Noritaka Usami 3 |
| 6 | Temperature Effect on Crystal Structure of BaSi2 | NIMS@Imai Motoharu 1, Sato Akira 1 |
| 7 | Energetic Evaluation of Ba- and Sr-Si clathrates | AIST@@*Imai Yoji 1,Watanabe Akio 1 |
| | | Break 15:45`16:00 | |
| 8 | Estimation of the disordered structure in Li8GeN4 by a Raman scattering spectroscopy | Hosei Univ. 1, Osaka Kyoiku Univ. 2@* Aoyama Harunobu 1, Suzuki Yuuhei 1, Kuriyama Kazuo 1, Kushida Kazumasa 2 |
| 9 | An energy-time-resolved study on energy relaxation dynamics of gE-lineh luminescence due to Si-borne {311} defects | Univ. of Tokyo (Komaba), Grad. School of Arts and Sci. 1@Tana-ami Norishige 1, Yasutake Y. 1, Fukatsu S. 1 |
| 10 | Narrow-band electroluminescence of G-center defects in Si and its temperature dependence | Univ. of Tokyo (Komaba) 1, Univ. of Tsukuba 2, NIMS 3@*Yasutake Yuhsuke 1, Ohmura Fuminori 1, Tana-ami Norishige 1, Murata Kouichi 2,3, Miki Kazushi 2,3, Fukatsu S. 1 |
| 11 | Luminescence property of anodic oxidation porous alumina using organic acid | College of Science and Technology, Nihon University.@*Shintaro Otsuka 1,Tomoko Asano 1,Tadataka Watanabe 1,Yoshiki Takano 1,Kouichi Takase 1 |
| 12 | Pure good single layer sample preparation of hexagon FeSe and that
material evaluation | Nihon Univ 1, Hiroshima Univ 2, Konan Univ 3@*Yuuzou Kaneko 1,Hideyuki Azuma 1,Shouzou Hiramoto 2,Fumiko Yoshida 2,
Cikako Moriyoshi 2,Youhei Matsui 3,Yosihiro Kuroiwa 2, Atsusi Yamasaki 3,
Tadataka Watanabe 1,Yoshiyuki Takano 1,Kouiti Takase 1 |
| ’ | 13 | Contact Property and Microstructure of Ni/Nb Electrode to 4H-SiC | Tohoku Univ.@*Kunhwa Jung, Yuji Sutou and Junichi Koike |
| £’ | 14 | Theoretical investigations of the intrinsic defects of 4H-SiC and their passivation | Grad. Sch. Eng., Tohoku Univ. 1, NICHe, Tohoku Univ. 2@*John Paul Yacapin 1, Ryuji Miura 1, Ai Suzuki 2, Hideyuki Tsuboi 1, Nozomu Hatakeyama 1, Akira Endou 1, Hiromitsu Takaba 1, Momoji Kubo 1, Akira Miyamoto 1,2 |
| 14.2 Heterostructures and Quantum Nanostructures |
| March 17 |
| 17a-TM - 1`30 |
| |
Short Presentation (5 min.) 9:15`12:00
17a-TM - 1`30 @Poster Session 13:00`15:00 |
| ’ | 1 | Fabrication of axial GaAs/InAs/GaAs heterostructures in GaAs nanowires by Selective-Area MOVPE and Regrowth method | G.S.IST and RCIQE, Hokkaido Univ. 1, JST PRESTO 2@*Tomioka Katuhiro 1.2, Motohisa Junichi 1,Hara Shinjiroh 1,Hiruma Kenji 1,Fukui Takashi 1 |
| ’ | 2 | Electron Spin Relaxation Times in MQWs Grown on Vicinal GaAs(110) Substrates | NAIST 1@*Akira Nakanishi 1, Shinji Koh 1, Kazuhiro Ikeda 1, Hitoshi Kawaguchi 1 |
| ’ | 3 | Spin relaxation time of high In content InGaAs/GaAs quantum well at room temperature | Waseda Univ. 1, SINANO-CAS 2, I.S.-CAS 3@*Asami Takeshi 1, Nosho Hidetaka 1, Lu Shulong 2, Niu Zhichuan 3, Tackeuchi Atsushi 1 |
| 4 | Analysis of single photon sources with metal-embedded quantum dots pillar structure | RIES 1, JST-CREST 2,@*Daimotsu Kato 1, Sotaro Ida 1, Sota Miyamura 1, Hideaki Nakajima 1, Hidekazu Kumano 1,2, Ikuo Suemune 1,2 |
| ’ | 5 | Study on highly-efficient single photon sources with metal-embedded quantum dots | RIES 1, JST CREST 2@*Nakajima Hideaki 1, Ekuni Shingo 1, Kumano Hidekazu 1 2, Miyamura Souta 1,
Kato Daimotu 1, Ida Sotaro 1, Sasakura Hirotaka 1 2, Suemune Ikuo 1 2 |
| 6 | Influence of inhomogeneity of pulse area and exciton energy on Rabi oscillations in a quantum dot ensemble | The Univ. of Electro-Commun. 1, PRESTO-JST 2,
National Inst. of Information and Communications Tech. (NICT) 3,
Sophia Univ. 4@*J. Ishi-Hayase 1,2,3, M. Kujiraoka 3,4, S. Mitsutake 3,4, K. Akahane 3,
N. Yamamoto 3, K. Ema 4, and M. Sasaki 3 |
| ’ | 7 | Rabi oscillations controlled by changing spatial distributions of incident pulses in a quantum dot ensemble | National Inst. of Information and Communications Technology 1, Sophia Univ. 2, The Univ. of Electro-Commun. 3, PRESTO-JST 4@*Mitsutake Satoshi 1,2, Kujiraoka Mamiko 1,2, Junko Ishi-Hayase 1,3,4, Aakahane Kouichi 1, Yamamoto Naokatsu 1, Ema Kazuhiro 2, Sasaki Masahide 1 |
| 8 | Analysis of Electron Spin-Spin Interaction in GaAs/AlGaAs Coupuled Quantum Well | GRL Shizuoka Univ. 1,QNK Konan Univ. 2,Grad. Sch. Nat. Sci. Konan Univ. 3,NTT BRL 4@*Tetsu Ito 1,2, Wataru Shichi 2, Masao Ichida 2,3, Hideki Gotoh 4, Hidehiko Kamada 4, Hiroaki Ando 2,3 |
| 9 | Electron-Electron Exchange Interaction in Coupled Quantum Well | QNL Konan Univ. 1, Grad. Sch. Nat. Sci. Konan Univ. 2, GRL Shizuoka Univ. 3@*Shichi Wataru 1, Ito Tetsu 3, Ichida Masao 1,2, Ando Hiroaki 1,2 |
| 10 | Zeeman Splitting of the Localized Exciton in GaAs/Al0.2Ga0.8As Quantum Well Measured by Micro-Photoluminesecence Spectroscopy | Grad. School of Natural Sci. Konan Univ. 1,QNL Konan Univ. 2,GRL Shizuoka Univ. 3@*Miyahara Miho 1,Sichi Wataru 2,Ito Tetu 2,3,Ichida Masao 1,2,Ando Hiroaki 1,2 |
| 11 | Spin Dynamics of Excited Trion States in an InAs Quantum Dot | NEC Corporation 1, NanoQuine 2, IIS the Univ. of Tokyo 3@*Igarashi Yuichi 1,2, Shirane Masayuki 1,2, Ota Yasutomo 2,3, Nomura Masahiro 2, Kumagai Naoto 2, Ohkouchi Shunsuke 2, Kirihara Akihiro 1,2, Ishida Satomi 2,3, Iwamoto Satoshi 2,3, Yorozu Shinichi 1,2, Arakawa Yasuhiko 2,3 |
| 12 | Radiative Cascades from Charged Biexcitons in Quantum Dots | NEC Corp. 1, NanoQuine, Univ. of Tokyo 2, IIS, Univ. of Tokyo 3@Shirane Masayuki 1,2, Igarashi Yuichi 1,2, Ota Yasutomo 2,3, Nomura Masahiro 2, Kumagai Naoto 2, Ohkouchi Shunsuke 2, Kirihara Akihiro 1,2, Ishida Satomi 2,3, Iwamoto Satoshi 2,3, Yorozu Shinichi 1,2, Arakawa Yasuhiko 2,3 |
| 13 | Real-time observation of electron spin polarization proccess in charge-tunable InP quantum dots
| Univ. of Tsukuba@*Kawana Keisuke 1, Tomimoto Shinichi 1, Masumoto Yasuaki 1 |
| 14 | Analysis on Single Electron Spin Initialization with Charged Excitons in Quantum Dots | NTT Basic Res. Labs.@*Gotoh Hideki 1, Sanada Haruki 1, Kamada Hidehiko 1, Yamaguchi Hiroshi 1, Nakano Hidetoshi 1 |
| 15 | Fine Structure Splitting and Anisotropic Rabi Oscillations in a Single Telcommunication-Band Quantum Dot
| NanoQuine Univ. Tokyo 1, IIS Univ. Tokyo 2, Fujitsu Labs. 3@*Miyazawa Toshiyuki 1, Nakaoka Toshihiro 1,2, Saito Toshio 1,2, Kumagai Naoto 1,
Watanabe Katsuyuki 1, Yokoyama Naoki 1,3, Arakawa Yasuhiko 1,2
|
| | | Break 10:30`10:45 | |
| 16 | Effects of magnetic field on exciton fine structures in InAs/GaAs quantum dots (II): optical polarization | NanoQuine Univ. Tokyo 1@*Saito Toshio 1, Nakaoka Toshihiro 1, Arakawa Yasuhiko 1
|
| £ | 17 | Ultra-narrow photoluminescence emission in GaAs quantum dots: Beyond the spectral diffusion | NIMS 1@*Marco Abbarchi 1, Takashi Kuroda 1, Takaaki Mano 1, Kazuaki Sakoda 1 |
| 18 | Relaxation dynamics of photoexcited carriers in stacked quantum dots | Department of Electrical and Electronic Engineering, Kobe Univ. 1,
NiCT 2@*Mamizuka Masataka 1, Kojima Osamu 1, Kita Takashi 1, Wada Osamu 1, Akahane Kouichi 2 |
| 19 | Excitation dependence on single exciton-photon strong coupling | NTT Basic Res. Labs. 1, Queen's Univ. 2, Hirosaki Univ. 3@*Takehiko Tawara 1, Hidehiko Kamada 1, Stephen Hughes 2, Hiroshi Okamoto 3, Masaya Notomi 1, Hideki Gotoh 1 |
| 20 | Fabrication of semiconductor microtubes containing quantum dots and its optical properties | Doshisha Univ. 1, NICT 2, Osaka City Univ. 3@*Ohtani Naoki 1, Mizoguchi Yuichiro 1, Yoshikawa Rie 1, Nishida Hiroki 1, Akahane Kouichi 2, Hosoda Makoto 3 |
| 21 | Photoluminescence Properties of InAsP Quantum Dots in InP Nanowires | NTT Basic Research Labs.@*Tateno Kouta 1,Zhang Guoqiang 1,Gotoh Hideki 1,Nakano Hidetoshi 1 |
| 22 | Time-resolved sum frequency generation measurements on a (113)B GaAs/AlAs coupled multilayer cavity with two cavity modes | Univ. of Tokushima 1@*Tanaka Fumiya 1, Takahashi Tomoya 1, Takimoto Toshikazu 1, Morita Ken 1, Kitada Takahiro 1, Isu Toshiro 1 |
| 23 | Magneto-optical Kerr effect induced by carrier spins in GaAs quantum wells modulated by surface acoustic waves
| NTT BRL 1, Tohoku Univ. 2@*Sanada Haruki 1, Gotoh Hideki 1, Kohda Makoto 2, Nitta Junsaku 2, Onomitsu Koji 1, Yamaguchi Hiroshi 1, Sogawa Tetsuomi 1 |
| 24 | Shortening of Carrier Lifetime and Evaluation of Electron Spin Relaxation Time in GaAs/AlGaAs(110) Multiple Quantum Wells | NAIST 1@*Ikeda Kazuhiro 1, Nishizaki Yoshitaka 1,Yokota Nobuhide 1, Ohnishi Kazuki 1, Koh Shinji 1, Kawaguchi Hitoshi 1 |
| £ | 25 | Intersubband absorption generation through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells towards monolithic integration of intersubband-transition-based all-optical switches | AIST@*Cong Guangwei 1CAkimoto Ryoichi 1, Gozu Shin-ichirou 1, Mozume Teruo 1, Hasama Toshifumi 1, Ishikawa Hiroshi 1 |
| 26 | An artificial nonradiative recombination center model created by use of a Si1-xGex/Si quantum-well-inserted pseudomorphic superlattice | Graduate School of Arts and Sciences, University of Tokyo at Komaba 1@*Terada Yosuke 1, Yasutake Yuhsuke 1, Fukatsu Susumu 1 |
| 27 | Study of Material Parameters in InGaAs/InAlAs Quantum Well | Yokohama National Univ. 1,2@*Yamada Hitoshi 1,Iseri Yuji 1,Arakawa Taro 2 |
| 28 | Characteristics of carrier tunneling from a GaAsN Quantum Well to InAs Quantum Dots | Graduate School of Engineering Kobe Univ. 1, CREATE Kobe Univ. 2, Univ. of Sheffield (UK) 3@*Ohta Shohei 1,Jin Cyaoyuan 2,Mark Hopkinson 3,Kojima Osamu 1,Kita Takashi 1,Wada Osamu 1, 2 |
| 29 | Magnetic-field dependence of the electronic structure in nitrogen δ-doped GaAs | Kobe Univ. 1@*Yukihiro Harada 1, Osamu Kojima 1, Takashi Kita 1, Osamu Wada 1 |
| 30 | Whispering Gallery Mode in AlGaAs microwire grown by MBE-VLS method | Nagoya Univ. 1@J.H.Paek 1, M.Yamaguchi 1 |
| 14.2 Heterostructures and Quantum Nanostructures |
| March 18 |
| 18a-TM - 1`26 |
| |
Short Presentation (5 min.) 10:00`12:25
18a-TM - 1`26 @Poster Session 15:30`17:30 |
| £ | 1 | Optical Characteristics of Two-Dimensional Array of Silicon nanodisk | Tohoku Univ. 1, NAIST 2, The Univ. of Tokyo 3, JST-CREST 4@*Chi-Hsien Huang 1,4, Makoto Igarashi 1,4, Mohd Fairuz bin Budiman 1, Xuan-Yu Wang 1,4, Yukiharu Uraoka 2, Ryuji Ohshima 3,4, Yoshitaka Okada 3,4, Ichiro Yamashita 2,4, Seiji Samukawa 1,4 |
| 2 | Device Simulation of Intermediate Band Quantum Dot Solar Cells (I) | Univ. Tsukuba, Inst. Appl. Phys. 1, The Univ. Tokyo, RCAST@*Katsuhisa Yoshida 1, Yoshitaka Okada 2, Nobuyuki Sano 1 |
| £ | 3 | Preparation of colloidal PbS quantum dot monolayer on GaAs substrates | Toyota Technological Institute@*Wei L? 1, Fumihiko Yamada 1, Itaru Kamiya 1 |
| 4 | Fabrication of single InAs quantum dot transistors using ALD formed HfO2 thin films as gate dielectrics
| IIS Univ. of Tokyo 1, INQIE Univ. of Tokyo 2, CREST-JST 3
@*Shibata Kenji 1, Horiuchi Isao 1, Cha Kyu Man 1, Seki Kyota 1, Hirakawa Kazuhiko 123
|
| £ | 5 | Effects of AlGaAs capping on InAs/GaAs quantum dots | Fujitsu Lab. Ltd. 1, QD Laser Inc. 2, Inst. NanoQuine, Univ. of Tokyo 3, IIS, Univ. of Tokyo 4@*Song Haizhi 1, Nakata Yoshiaki 1, Yamamoto Tsuyoshi 1, Sugawara Mitsuru 2, Arakawa Yasuhiko 3,4, Yokoyama Naoki 1 |
| £ | 6 | Chemical composition and thermal stability of GaAs oxides grown by AFM anodic oxidation for site-controlled growth of InAs quantum dots | IIS Univ. of Tokyo 1, INQIE Univ. of Tokyo 2, CREST-JST3 EST-JST 3@*Kyu Man Cha 1, Kenji Shibata 1, Isao Horiuchi 1, Masao Kamiko 1, Rouichi Yamamoto 1, Kazuhiko Hirakawa 1,2,3 |
| 7 | Spectro-ellipsometric measurements for dielectric function of CdSe-nanoparticles | Osaka Pref. Univ. 1, Osaka City Univ. 2, Chiba Inst. Tech. 3@*Junichi Sakamoto 1, Hiroki Yokota 2, Kazuki Wakita 3, DaeGwi Kim 2, YongGu Shim 1 |
| 8 | Nanostructure of O-doped CdS films by cathode sputtering | Chiba Inst. of Tech. 1,Osaka Pref. Univ. 2,Azerbaijan Inst. of Phys. 3@*Suzuki Akinori 1,Amagai Satoshi 1,Kuramochi Junpei 1,Wakita Kazuki 1,Shim Yonggu 2,Nazim Mamedov 3,Ayaz Bayramov 3,Emil Huseynov 3,Ilham Hasanov 3,Naser Fathi 3 |
| £ | 9 | Synthesis of PVP capped ZnS nanorods under microwave irradiatio | RIE, Shizuoka Univ. 1,SRM Univ. 2@*Mani Navaneethan 1, Jayaram Archana 2, Mukkannan Arivanandhan 1, Suruttaiyaudaiyar Ponnusamy 2, Yasuhiro Hayakawa 1 |
| 10 | I/V characteristics evaluation of MoO2 nanotube with rectangular cross sections | RIEC, Tohoku Univ. 1,Tohoku Inst. of Technology 2,Toyota Technological Inst. 3,Aichi Univ. of Education 4@*Sakurai Takumu 1,Handa Hiroyuki 1,Ishikawa Makoto 4,Fukidome Hirokazu 1,Yoshimura Masamichi 3,Abe Toshimi 2,Suemitsu Maki 1 |
| £ | 11 | Growth and characterization of <110>-oriented In0.04Ga0.96As nanowires laterally grown on GaAs (311)B substrate by Au-catalyzed vapor-liquid-solid mode | NTT BRL 1@*Zhang Guoqiang 1, Tateno Kouta 1, Gotoh Hideki 1, Nakano Hidetoshi1 |
| 12 | Fabrication and functionalization of InAs nanowire SET device | RIKEN@1,Tokyo Univ of Science@2,NTT BRL 3@*Kozakai Tatsuya 1 2,Nishio Takahiro 1,Oie Manabu 1 2,Hirano Masashiro 1 2,Guoqiang Zhang 3,Tateno Kouta 3,Takayanagi Hideaki 2,Ishibashi Kouji 1 |
| 13 | SA-MOVPE growth Using Thermal Nanoimprint Lithography
| Graduate School of Information Science and Technology 1 and RCIQE 2, Hokkaido Univ.@Inoue Masaki 1, Sato Takuya 2, Ikebe Masayuki 1, Hara Shinjiroh 2, Fukui Takashi 2, and Motohisa Junichi 1 |
| | | Break 11:05`11:20 | |
| 14 | Fabrication and characterization of tubular InAs channel FETs using InP nanowires | Graduate School of IST and RCIQE, Hokkaido Univ.@*Takuya Sato 1, Junnichi Motohisa 1, Shinjiro Hara 1, Eiichi Sano 1, Takashi Fukui 1 |
| 15 | Calculation of the Electronic State of Nanowire Models with Electronic Current | Kyoto Univ. 1@*Senami Masato 1, Ikeda Yuji 1, Fukushima Akinori 1, Tachibana Akitomo 1 |
| 16 | A study on array technologies for Ge low-dimensional structures formed by sputter epitaxy | Tokyo Univ. of Agric. and Tech.,National Inst. of Info. and Communications Tech.@*Ohhashi Hiroyuki 1,Suda Yoshiyuki 1,Hirose Nobumitu 2,Miura Takashi 2,Matui Toshiaki 2 |
| 17 | Electron transport in silicon particle assembly covered with silicon oxynitride films | Konan Univ. 1,Kansai Univ. 2,Quamtum Nano Tech. Lab, Konan Univ. 3@*Koizumi Ryouta 1,Inada Mitsuru 2,Umezu Ikurou 1,3,Saitoh Tadashi 2, Sugimura Akira 1,3 |
| 18 | Preparation of Graphene and Bi-layered Graphene by Chemical Vapor Deposition | College of Sci. & Technol., Nihon University@M.Takanashi 1,K.Matsuyama 1,T.Maeda 1,N.Iwata 1,H.Yamamoto 1 |
| 19 | Fabrication and Evaluation of Mono-layer and Double-layer Graphene by Chemical Detached Method | Nihon University@*Shigemoto Chihiro 1,Keiichiro Matsuyama 1,Teppei Maeda 1,Nobuyuki Iwata 1,Yamamoto Hiroshi 1 |
| 20 | A study of electronic structures by a tight-binding method | Kobe University, Grad. School of Eng. 1@*Matsuda Koji 1, Ogawa Matsuto 1, Souma Satofumi 1 |
| 21 | Quantization Masses of Holes in Hexagonal Semiconductor Quantum Wells | Shimane Univ.@*Yasutomo Kajikawa 1 |
| 22 | Growth of ultra-thin fluoride films on Ge(111) substrates and its application to resonant tunneling devices | Tokyo Tech.@*Takahashi Keita, Saitou Noboru, Oshita Takao, Tsutsui Kazuo |
| 23 | Two-step growth of NiSi2 layers for fluoride resonant tunneling devices on Si | Tokyo Inst. of Tech.@*Noboru Saitou 1, Yuki Yoshizumi 1, Yuji Fukuoka 1, Keita Takahashi 1,Kazuo Tsutsui 1 |
| 24 | Fabrication of GaAs/Air multilayer cavity structure by selective etching | Univ. of Tokushima 1,NICIA Corp. 2@*Takahashi Tomoya 1,Tanaka Fumiya 1,Zhang Zhao 1,Nakagawa Yoshinori 1,2,Morita Ken 1,Kitada Takahiro 1,Isu Toshiro 1
|
| £ | 25 | Displacement noise squeezing in an electromechanical resonator | NTT BRL 1@Mahboob Imran 1, Flurin Emmanuel 1, Nishiguchi Katsuhiko 1, Fujiwara Akira 1, Yamaguchi Hiroshi 1 |
| 26 | Electric Property as a Function of Conditions at Post Hydro Oxidation Process | Tokai Univ. School of High Tech. 1, Tokai Univ. Course of Mat. Sci. and Tech.2 Tokai Univ. Course of Sci. and Tech.3@Yoshida Yuta 1, *Maizono Mikihiko 2, Chiba Masafumi 1, Honjo Takamitsu 3 , Kuji Toshiro 1 |
| 14.3 Process Technologies and Interface Physics |
| March 19 10:00`16:45 |
| 19a-TS - 1`11 |
| 1 | Electrical characteristics of InP-porous nanostructures formed by electrochemical process
| Hokkaido Univ@*Okazaki Hiroyuki,Yoshizawa Naoki,Sato Taketomo,Hashizume Tamotu |
| 2 | Lift-off process of In for formation of patterned InAs/GaAs hetero-structures | Graduate School of Engineering Nagoya Univ. 1, Department of Engneering Nagoya Univ. 2, VBL Nagoya Univ. 3@*Takashima Taketo 1, Morioka Kotaro 2, Motoki Kazuya 1, Tabuchi Masao 3, Takeda Yoshikazu 1 |
| 3 | Fabrication of nanopore arrays on n-GaAs(001) by anodizing process | Tokyo Univ. of Agri. & Tech. 1@*Yamamoto Hitioshi 1,Kinoshita Yasuyuki 1,Morishita Yoshitaka 1 |
| 4 | Fabrication of Semiconductor Pillar structures embedded with metal using AlGaAs sacrifice layer
| RIES 1,NIMS 2,JST-CREST 3@*Sota Miyamura 1,Hitoshi Iijima 1,Masafumi Jo 2,Daimotsu Kato 1,Sotaro Ida 1,Hideaki Nakajima 1,Shingo Ekuni 1,Hidekazu Kumano 1,3,Ikuo Suemune 1,3
|
| 5 | Metal selection and photon extraction efficiency in metal-embedded quantum dot-semiconductor pillar structures | RIES 1, JST CREST 2@Sotaro Ida 1, Daimotsu Kato 1, Sota Miyamura 1, Hideaki Nakajima 1, Hidekazu Kumano 1,2, Ikuo Suemune 1,2 |
| | | Break 11:15`11:30 | |
| ’ | 6 | Electron transport in InAs ultra-thin films bonded on flexible substrates | Japan Advanced Institute of Science and Technology 1@*Hashimoto Norihiko 1, Takita Hayato 1, Kudo Masahiro 1, Akabori Masashi 1, Suzuki Toshi-kazu 1 |
| 7 | Air-gap capacitance-voltage characterization of InP surfaces | shimane Univ. 1, RCIQE 2@*Yoshida Toshiyuki 1, Hashizume Tamotsu 2 |
| 8 | Surface state control of GaAs using wet chemical processes | Toyota Tech. Inst. 1, RIKEN 2@*Fumihiko Yamada 1, Eisuke Itoh 2, Masahiko Hara 2, Itaru Kamiya 1 |
| ’ | 9 | Estimation of damage caused focused ion beam into GaAs heterojunction by microscopic photoluminescence | Graduate Sch. of Pure and Appl. Sci., Univ. of Tsukuba 1, Natl. Inst. of Advanced Industrial Sci. and Technol. 2, Graduate Sch. of Sci., Tokyo Univ. of Sci. 3, Natl. Inst. for Materials Sci. 4@*Shishido Masayuki 1, Nomura Shintaro 1, Matsumoto Tetsuro 2, Kashiwaya Satoshi 2, Ishiguro Ryosuke 3, Takayanagi Hideaki 3,4 |
| 10 | Selective etching and polymer deposition in InP surface by CH4/H2 RIE (3) | NTT Photonics Lab.@*Yamamoto Norio 1 |
| 11 | New stack-type MIM capacitor | NTT Photonics Lab. 1@Tsutsumi Takuya 1, Sugitani Suehiro 1, Nishimura Kazumi 1, Ida Minoru 1 |
| | | Lunch 13:00`14:00 | |
| 19p-TS - 1`10 |
| 1 | The ohmic characteristic evaluation of BP | Keio Univ. 1,Shonan Inst. 2@*Hiroshi Okabe 1,Kazutoshi Kameyama 1,Yuji Ino 1,Satoru Matumoto 1,Suzuka Nishimura 2,Kazutaka Terashima 2, |
| 2 | Electrochemical oxidation process for GaN heterostructures and p-n junctions | RCIQE and Graduate School of IST, Hokkaido Univ. 1, JST-CREST 2,@*Harada Naohisa 1,Hashizume Tamotsu 1 2, |
| 3 | Measurement of Electron Traps in n-GaN on Si (111) Substrates
by Deep-Level Transient Spectroscopy | Nagoya Inst. of Tech.@*Watanabe Arata 1,Egawa Takashi 1 |
| 4 | Deep-Level Optical Spectroscopy Investigation of Band-Gap States in AlGaN/GaN Hetero-Structures with Different Current-Collapses | Chubu Univ. 1, NIMS 2, POWDEC 3@*Yoshitaka Nakano 1, Yoshihiro Irokawa 2, Yasunobu Sumida 3, Hiroji Kawai 3 |
| 5 | Deep-Level Optical Spectroscopy Study of Band-Gap States in n-GaN Epilayers Using Transparent Polyaniline Schottky Contacts
| Chubu Univ. 1, NIMS 2@*Yoshitaka Nakano 1, Nobuyuki Matsuki 2, Yoshihiro Irokawa 2, Masatomo Sumiya 2
|
| | | Break 15:15`15:30 | |
| 6 | Effect of Carbon doping on current collapse in AlGaN/GaN HEMTs | Univ. of Fukui 1, Aich Inst. of Tech 2@Kunishio Naoki 1, *Shiojima Kenji 1, Yamada Yuujiro 2, Shibata Tatsunari 2, Akiyama Kazuki 2, Tokuda Yutaka 2
|
| ’ | 7 | Characterization of surface properties and deep levels of Mg-doped GaN | RCIQE Hokkaido Univ. 1, JST-CREST 2@*Ogawa Eri 1, Hashizume Tamotsu 1, 2 |
| ’ | 8 | Fabrication process and interface characterization of ALD-Al2O3/GaN structure | RCIQE Hokkaido Univ. 1, JST-CREST 2@*Yujin Hori 1, Chihoko Mizue 1, Tamotsu Hashizume 1,2 |
| 9 | Behavior of plasma-induced defects in n-GaN exposed to Ar plasma with UV illumination | Tokyo Metropolitan Univ.@*Koichi Hoshino 1,Seiji Nakamura 1,Tsugunori Okumura 1 |
| 10 | Demonstration of AlInN-based Ultraviolet Photodiodes on AlN Templates | Nagoya Inst. of Tech. 1@*Sakai Yusuke 1,Morimoto Tomohiko 1,Egawa Takashi 1,Jimbo Takashi 1 |
| 14.4 Ultrafast/Functional Electron Devices |
| March 19 9:15`12:15 |
| 19a-TK - 1`11 |
| 1 | I-V characteristics of submicron InP/InGaAs nMOSFET with regrown InGaAs source | Tokyo Tech.@*Wakabayashi Kazuya 1,Kanazawa Toru 1,Saito Hisashi 1,Terao RyouSuke 1,Ikeda Shunsuke 1,Miyamoto Yasuyuki 1,Furuya Kazuhito 1 |
| 2 | I-V characteristic of InP/InGaAs channel n-MOSFET with Al2O3 gate dielectric | Tokyo Tech@*Terao Ryousuke 1,Kanazawa Toru 1,Saito Hisashi 1,Wakabayashi Kazuya 1,Ikeda Shunsuke 1 |
| ’ | 3 | Theoretical Analysis of Carrier Transport in Nano-Scale InGaAs-Channel MOSFETs | Tokyo University of Science@1@*Hisanao Watanabe 1, Takahiro Homma 1, Takayuki Takegishi 1, Shinsuke Hara 1, Hiroki Fujishiro 1 |
| ’ | 4 | Reduction of interface states in GaAs MOS by optimization of layer thickness of in situ AlP passivation layer with MOVPE | The Univ. of Tokyo 1, RCAST 2@*Yuki Terada 1, Yukihiro Shimogaki 1, Mitsuru Takenaka 1,
Shinichi Takagi 1, Yoshiaki Nakano 1,2, Masakazu Sugiyama 1 |
| 5 | InP Hetero junction Bipolar Transistors transferred to Si substrate | Tokyo Tech@*Isogai Yuji 1,Kobayasi Takashi 1, Yamaguchi Yutaro 1, Miyamoto Yasuyuki 1, Furuya Kazuhito 1 |
| 6 | Improvement of strain stability in strained Ge channel by Si cap layer | Tokyo City Univ. 1, Univ. of Warwick 2@Kentaro Nasu 1,Kentaro Sawano 1 ,Yusuke Hoshi 1 ,Toru Kurebayashi 1, Maksym Myronov 2, Yasuhiro Shiraki 1 |
| | | Break 10:45`11:00 | |
| 7 | Monte Carlo Simulations of Electron Transport in Nanogate In0.7Ga0.3As/InAs/In0.7Ga0.3As Composite Channel HEMTs | Nat. Inst. of Info. & Com. Tech. 1, Fujitsu Labs. Ltd. 2@*Akira Endoh 1, Issei Watanabe 1, Nobumitsu Hirose 1, Takashi Mimura 1,2, Toshiaki Matsui 1 |
| ’ | 8 | The Relationship between the Shape of Gate Electrode and Parasitic Delay in HEMT | RIEC, Tohoku Univ.@Keisuke Akagawa1, Shunsuke Fukuda1, Tetsuya Suemitsu1, Taiichi Otsuji1 |
| ’ | 9 | Selective undercut etching for ultra narrow mesa in vertical InGaAs channel MISFET | Tokyo Institute of Technology@Saito Hisashi 1, Kususaki Tomoki 1, Matsumoto Yutaka 1, Miyamoto Yasuyuki 1, Furuya Kazuhito 1 |
| 10 | Fabrication of InP/InGaAs DHBT with buried SiO2 wires | Tokyo Tech. 1@*Kobayashi Takashi 1, Suzuki Hiroyuki 1, Takebe Naoaki 1, Miyamoto Yasuyuki 1, Furuya Kazuhito 1 |
| 11 | GaAsSb-based Backward Diodes for Highly Sensitive Millimeter-Wave Detectors | Fujitsu Labs. 1@Takahashi Tsuyoshi 1, Sato Masaru 1, Nakasha Yasuhiro 1, Hirose Tatsuya 1, Hara Naoki 1 |
| 14.4 Ultrafast/Functional Electron Devices |
| March 20 9:00`15:00 |
| 20a-TK - 1`11 |
| 1 | Variations of Surface Fermi energies and deep levels of AlGaN alloy | RCIQE, Hokkaido Univ. 1, JST-CREST 2, Mie Univ. 3@Kubo Toshiharu 1, Sugawara Katsuya 1, *Hashizume Tamotsu 1 2, Taketomi Hiroyuki 3, Miyake Hideto 3, Hiramatsu Kazumasa 3 |
| ’ | 2 | Characterization of electron velocity reduction rate due to self-heating in AlGaN/GaN heterojunction field-effect transistors | Japan Advanced Institute of Science and Technology 1@*Tanaka Nariaki 1, Suzuki Toshi-kazu 1 |
| ’ | 3 | Photo-response characteristics of ALD-Al2O3-insulated gates on AlGaN and n-GaN | Hokkaido Univ. RCIQE 1, JST-CREST 2@*Chihoko Mizue 1, Yujin Hori 1, Tamotsu Hashizume 1 2 |
| 4 | Thermal annealing effect on GaN Schottky barrier diodes with Zr/Al/Mo/Au electrodes | University of Fukui 1, Sharp Corporation 2@Kunishio Naoki 1, Hatano Maiko 1, Watanabe Fuminao 1,
Yafune Norimasa 2, Kuzuhara Masaaki 1 |
| ’ | 5 | GaN MOSFET with Silane-Based Plasma CVD Oxide | Tokushima Univ STS Inst. 1,SAMCO Inc. 2@*Nakatani Katsutoshi 1,Sogawa Yuji 1,Kim Yon-hyon 1,Ao Jin-Ping 1,Ohno Yasuo 1,Miyashita Takahiro 2,Motoyama Shiniti 2 |
| ’ | 6 | Correlation between surface leakage current and surface condition of dual-gate AlGaN/GaN HEMT | RCIQE of Hokkaido Univ. 1, JST-CREST 2@Tajima Masafumi 1, Hashizume Tamotsu 1,2 |
| | | Break 10:30`10:45 | |
| ’ | 7 | Effect of Optical Excitation on AlGaN/GaN HFET Current Collapse | Institute of Tech. & Sci., The University of Tokushima@*Kentaro Kuroda 1, Yusuke Ikawa 1, Kenta Mitsuyama 1, Jin-Ping Ao 1, Yasuo Ohno 1 |
| 8 | Current Collapse Phenomena in High Voltage GaN-HEMTs with the Recess Gate | Semiconductor Company, Toshiba Corp. 1@Saito Wataru 1, Kakiuchi Yorito 1, Saito Yasunobu 1, Noda Takao 1, Fujimoto Hidetoshi 1, Yoshioka Akira 1, Ohno Tetsuya 1 |
| 9 | Improvements of current collapse of AlGaN/GaN HEMT by surface treatments | Sumitomo Electric Industries, LTD. 1, Sumitomo Electric Device Innovations, INC. 2@*Araya Takeshi 1, Komatani Tsutomu 2, Ishii Kazuaki 2, Tateno Yasunori 1 |
| ’ | 10 | Improved p-InGaN/AlGaN/GaN normally-off HEMTs on silicon substrates | Nagoya Inst. of Tech.@1@*Nagai Kazuhiro 1,Suzue Takaaki 1, Lawrence Selvaraj 1,Egawa Takashi 1 |
| ’ | 11 | Analysis of On-Resistance for a Normally-off GaN MIS-HFET@Using a@Piezo Neutralization Technique | Nano Electronics Research Labs., NEC Corporation@*Endo Kazuomi ,Ota Kazuki, Okamoto Yasuhiro, Ando Yuji, Miyamoto Hironobu, Shimawaki Hidenori |
| | | Lunch 12:00`13:00 | |
| 20p-TK - 1`8 |
| 1 | Electron transport and piezoresistance in heterostructures on GaAs(111) | Toyota Technological Inst. 1@*Yonekura Kenji 1, Sakashita Hiroki 1, Akiyama Yoshihiro 1, Ohmori Masato 1, Sakaki Hiroyuki 1 |
| 2 | Theoretical Power Loss Limits of GaN and SiC Power Devices | AIST ESERL 1@*Shimizu Mitsuaki 1, Nakajima Akira 1 |
| 3 | Study on Switching Loss in Serial-connection GaN-HEMTs Bi-directional Switches | AIST ESERL 1@*Ide Toshihide 1, Akira Nakajima 1, Mitsuaki Shimizu 1 |
| 4 | Analysis of Lag Phenomena and Current Collapse in Field-Plate AlGaN/GaN HEMTs (2) | Shibaura Inst. Technol.@*Onodera Hiraku 1, Nakajima Atsushi 1, Horio Kazushige 1 |
| 5 | Device simulation for AlGaN/GaN HEMT with GIT structure | TUS, 1 AIST, 2@Hiroshi Chonan 1, Toshihide Ide 2, Mitsuaki Shimizu 2, Hisayuki Nakanishi 1
|
| 6 | MOCVD growth and characterization of 4-inch InAlN/GaN/Si HEMT epiwafers | NGK Insulators Ltd. 1, Nagoya Inst. of Technology 2@*Shigeaki Sumiya 1, Sota Maehara 1, Tomohiko Sugiyama 1, Mikiya Ichimura 1, Yoshitaka Kuraoka 1, Makoto Miyoshi 1, Mitsuhiro Tanaka 1, Takashi Egawa 2, |
| 7 | Development and evaluation of AlGaN/GaN HEMT forming periodic trench | RCIQE 1, Hokkaido Univ. 2, JST-CREST 3@*Ohi Kota 1 2, Hashizume Tamotsu 1 2 3 |
| 8 | AlGaN/GaN HEMTs with Reduced Source/Drain Spacing (II) | National Inst. of Info. & Com. Tech. 1, Fujitsu Lab. 2@*Yamashita Yoshimi 1, Watanabe Issei 1, Endoh Akira 1, Hirose Nobumitsu 1, Matsui Toshiaki 1, Mimura Takashi 1,2 |
| 14.5 Optoelectric Properties and Devices |
| March 17 9:30`12:30 |
| 17a-TE - 1`11 |
| ’ | 1 | Device Simulation of High-Absorption Tensile-Strained Ge Solar Cells | Dept. Physical Electronics, Tokyo Tech. 1, Photovoltaics Research Center (PVREC), Tokyo Tech 2@*Yutaka Hoshina 1, Masayuki Shimizu 1, Akira Yamada 1,2, Makoto Konagai 1,2 |
| 2 | Band offset of SnS solar cell structure | ADL/Tokyo Univ. of Science 1, Sri Venkateswara Univ. 2@M. Sugiyama 1, K. T. R. Reddy 2, N. Revathi 2, Y. Shimamoto 1, Y. Murata 1, H. Nakanishi 1 |
| 3 | Growth mechanism of SnS thin films by sulfurization | ADL/Tokyo Univ. of Science 1,Sri Venkateswara Univ. 2@*Y. Shimamoto 1,K.T.R. Reddy 2,C. Venkataiah 2,T. Sato 1,H. Nakanishi 1,M. Sugiyama 1 |
| 4 | Effects of annealing for Ag-rich AgInS2 thin films prepared by a vacuum evaporation method | Miyakonojo Coll. Tech. 1, Tsuyama Coll. Tech. 2, Miyazaki Univ. 3@*Akaki Yoji 1, Yamashita Kyohei 1, Nakamura Shigeyuki 2, Tokuda Takahiro 3, Yoshino Kenji 3 |
| 5 | Growth of ZnSnAs2 Epitaxial Films Pseudomorphic to InP Substrates | Nagaoka Univ. of Tech. 1, Aoyama Gakuin Univ. 2@*Endo Hironori 1, Asubar Joel T. 1, Agatsuma Yuji 1, Ishibashi Takayuki 1, Nakamura Shin'ichi 2, Jinbo Yoshio 1, Uchitomi Naotaka 1 |
| 6 | Preparation of ZnS thin films by CBD method with the low temperature self-catalyst growth process and examination of the thickness control of those thin films | Tokyo University of Science@*Iwashita Taisuke,Ando Shizutoshi |
| | | Break 11:00`11:15 | |
| | 7 | Room-temperature current-injected red emission from p-GaN/Eu-doped GaN/n-GaN light-emitting diodes | Osaka Univ. 1@Nishikawa Atsushi 1, Kawasaki Takasahi 1, Furukawa Naoki 1, Terai Yoshikazu 1, Fujiwara Yasufumi 1 |
| 8 | Photoluminescence property of AgInS2 nanoparticles with chalcopyrite structure | Nagoya Inst. Tech. 1, Muroran Inst. Tech. 2@*Ogawa Tetsuya 1, Tsuzuki Masakazu 1, Kuzuya Toshihiro 2, Hamanaka Yasushi 1 |
| 9 | Optical Properties of SnEuTe and SnSrTe films | Faculty of Engineering 1, Graduate School of Engineering 2, Shizuoka Univ.@*Ishida Akihiro 1, Tsuchiya Takuro 2, Hirose Kenta 2 |
| 10 | Photoluminescence of Microwave-Synthesized AgGaSe2 Polycrystals (III) | Osaka Pref. College of Technology@Susaki Masami 1 |
| 11 | First Principles Study of Optical Absorption Spectra of Calcopyrite Compounds | Hitachi ARL 1, NIMS 2, IIS Univ. Tokyo 3@*Hamada Tomoyuki 1,3, Ohno Takahisa 2,3 |
| 14.5 Optoelectric Properties and Devices |
| March 17 9:30`11:30 |
| 17a-TF - 1`8 |
| £’ | 1 | Non-contact Silicon Ingot Slicing by Electrochemical Anodization (III) | Graduate School of Eng., Tokyo Univ. of Agri. & Tech. 1, Quantum14 Corp. 2@*Mentek Romain 1, Yamakawa Takamasa 1, Gelloz Bernard 1, Kanehori Kenichi 2, Warabisako Terunori 2, Mori Masamitsu 2, Shimada Toshikazu 2, Koshida Nobuyoshi 1 |
| 2 | The comparison between Electroluminescence images in forward bias and in reverse bias | NAIST@¦Emi Sugimura 1, Shinichiro Tsujii 1, Kenji Hirata 1, Takashi Saitoh 1, Ayumi Tani 1 and Takashi Fuyuki 1 |
| 3 | Deposition of copper oxide thin films by the sol-gel method | Nagoya Institute of Technology, Dept. Eng. Phys., Electron. & Mech.@*Kentaro Tajimi 1,Masaya Ichimura 1 |
| 4 | Measurement of Strain Distribution in Multi-Crystalline Silicon Substrates for Solar Cells using Synchrotron Radiation | Univ. Hyogo 1@*Koji Arafune 1, Shohei Miki 1, Masao Monden 1 |
| ’ | 5 | Sub-bandgap Photoconductivity and Carrier Lifetime in H+ Implanted Si Wafers | Nagoya Inst. of Tech.@1 ,S.H.I. Examination & Inspection 2@*Wada koji 1,Masashi Kato 1,Masaya Ichimura 1,Hiroyuki Uno 2,Hitoshi Sakane 2,Yoshiaki Nishihara 2 |
| £ | 6 | Energy band structure effect on limiting conversion efficiency in the quantum-dots intermediate band solar cells | CREATE, Kobe Univ. 1, Grad. School of Eng., Kobe Univ. 2@*Hu Weiguo 1, Inoue Tomoya 2, Kita Takashi 1,2, Kojima Osamu 1,2, Wada Osamu 1,2 |
| £’ | 7 | Electrochemical heteroepitaxial growth of p-Cu2O/n-ZnO heterojunction diode | Toyohashi University of Technology@Fariza Mohamad 1,Junji Sasano 1, Masanobu Izaki 1 |
| 8 | Theoretical study on exciton dissociations at donor-acceptor heterojunctions of semiconducting polymers
| Tohoku univ.@*Hiroyuki Tamura
|
| 14.5 Optoelectric Properties and Devices |
| March 18 9:00`18:45 |
| 18a-TF - 1`12 |
| | 1 | Fabrication of Wavelength Conversion Materials with Long-Term Photostability and High Transparency: Near-UV to Red Conversion by YVO4:Bi3+,Eu3+ Nanophosphor | Keio Univ. 1, SINLOIHI Co., Ltd. 2@*Takeshita Satoru 1, Nakayama Kenji 1, Isobe Tetsuhiko 1, Sawayama Tomohiro 2, Niikura Seiji 2 |
| ’ | 2 | Synthesis of near-infrared (NIR) illuminant of Y3Al5O12:Nd nanoparticles | Waseda Univ.Dept.of Elec.Eng.and Biosci. 1 , Lab.for Mat.Sci.&Tech. 2@Yamamoto Takuma 1, Hamaguchi Sayako 1 , Konishi Keisuke 1 ,Kobayashi Masakazu 1,2 |
| 3 | Solvothermal Synthesis and Characterization of Zn2GeO4:Mn2+ Nanophosphor | Keio Univ. 1, SINLOIHI Co., Ltd. 2@*Takeshita Satoru 1, Honda Joji 1, Isobe Tetsuhiko 1, Sawayama Tomohiro 2, Niikura Seiji 2 |
| 4 | Reflection and Photoluminescence Properties of CdSe/ZnS Nanocrystals in a Metallic Microcavity | Inst. Symbiotic Sci. & Tech. 1, Dep. Appl. Phys. 2, Tokyo Univ. Agri. & Tech.@Masaru Oda@1,2, Hiroyuki Kazita@2, Shuhei Yamada@2, Erina Tanaka@2, Yuki Obara@2, and Toshiro Tani 1,2 |
| | | Break 10:00`10:15 | |
| 5 | Luminescence in perovskite-type alkaline-earth stannates using a unilamellar nanosheets seed-layer | AIST 1, KIT 2@*Takashima Hiroshi 1, Hoshi Yasushi 1, Tetsuka Hiroyuki 1, Ebina Takeo 1 Ueda Kazushige 2, Ikegami Keiichi 1 |
| 6 | Spatially resolved cathodoluminescence from ZnO nanostructures | Yamaguchi Univ. 1, Kyushu Univ. 2@Murotani Hideaki 1, Akase Daiki 1, Yamada Yoichi 1, Taguchi Tsunemasa 1, Matsumoto Takafumi 2, Nakamura Daisuke 2, Okada Tatsuo 2 |
| 7 | Enhancement of the band-gap emission intensity in Au-deposited GaN particles | Graduate School of Engineering, Gunma University@*Hosaka Tomohiro M1,Nakamura Toshihiro and Adachi Sadao |
| 8 | XAFS analysis of rare-earth doped stannate phosphors with perovskite-type structure | Kyushu Institute of Technology 1,JASRI 2
@*Nagamizu Kota 1,Kishigawa Yusuke 1,Hidaka Koichi 1,Ueda Kazushige 1,Honma Tetsuo 2 |
| 9 | Photo-excited dielectric relaxation: Methodology and application to Sm2O3 doped TiO2 | NIMS 1, Tokyo Univ. of Sci 2, Toyo Univ. 3@*Ishii Masashi 1, Harako Susumu 2, Zhao Xinwei 2, Komuro Shuji 3 |
| 10 | Optical properties of Tb ? Sc2O3 | Chitose Institute of Science and Technology 1@*Takahashi Takuya 1, Naruse Hirotaka 1, Yamanaka Akio 1 |
| ’ | 11 | Dependence of optical properties of Tb-doped AlBNO films on composition ratio | Osaka Univ. 1@*Semba Akitoshi 1,Masumoto Keiko 1,Chiharu Kimura 1,Aoki Hidemitsu 1,Sugino Takashi 1 |
| ’ | 12 | Growth and Annealing Effect of Tb-doped AlBNO Films | Osaka Univ. 1,NIMS 2@*Masumoto Keiko 1,Semba Akitoshi 1,Kimura Chiharu 1,Aoki Hidemitsu 1,Taniguchi Takashi 2,Watanabe kenji 2,Sugino Takashi 1 |
| | | Lunch 12:15`13:15 | |
| 18p-TF - 1`21 |
| 1 | Eu3+-doped ZnO Nanoparticles Fabricated by Laser Ablation in Aqueous Solution | Univ of Electro-Communications@*K. Kawabata 1, T.Okuno 1 |
| 2 | Temperature dependence of luminescence on Sr-Al-O:Eu2+ phosphor synthesized with magnesium diffusion | Nagaoka Univ. Tech. 1, Chubu Chelest Co., Ltd. 2@*Komatsu Keiji 1, Atushi Nakamura 1,2, Ariyuki Kato 1, Shigeo Ohshio 1, Hiroki Akasaka 1, Hidetoshi Saitoh 1 |
| 3 | Blue fluorescence character of Ti-Al2O3 | Chitose Institute of Science and Technology 1@*Hirotaka Naruse 1, Hiroyuki Watanabeu 1, Tomonori Daimon 1, Hisaya Oda 1, Akio Yamanaka 1 |
| 4 | Optical Degradation Characteristics of Eu-Complex Encapsulated by Sol-Gel Derived Glass Using Autoclave Method
| Saitama Univ. 1, Mitsubishi Chemical Group, Sci. Tech. Res. Center, Inc. 2@*Sayaka Kato 1, Takeshi Fukuda 1, Zentaro Honda 1, Norihiko Kamata 1, Naoto Kijima 2 |
| ’ | 5 | Analysis of Energy Transfer mechanism in Ce3+-Yb3+ Co-doped YAG Ceramics | Kyoto Univ. 1, JST-PRESTO 2@*Ueda Jumpei 1, Tanabe Setsuhisa 1,2 |
| 6 | Synthesis and Luminescent Characteristics of LnOF:Eu(Ln=y,La,Gd) Red Phosphor for VUV Excitation | Tottori Univ. 1,TEDREC 2, Tokushima Bunnri Univ. 3@Y.Tanase 1,Y.Iwata 1,Y.Miyamoto 1.2,K.Ohmi 1,T.Kunimoto 3 |
| 7 | A Computational Chemistry Study on Relationship between Crystal Structure and Excitation Wavelength of Phosphors | Grad. Sch. Eng., Tohoku Univ. 1, NICHe, Tohoku Univ. 2@Hiroaki Onuma 1, Itaru Yamashita 1, Kazumi Serizawa 1, Ryuji Miura 1, Ai Suzuki 2, Hideyuki Tsuboi 1, Nozomu Hatakeyama 1, Akira Endou 1, Hiromitsu Takaba 1, Momoji Kubo 1, Akira Miyamoto 1,2 |
| 8 | Local structure analyses of Mn ions in ZnAl2O4:Mn highly-chromatic-pure green phosphor | JASRI 1,Shizuoka Univ. 2@Honma Tetsuo 1,Nagura Toshiki 2,Kominami Hiroko 2,Nakanishi Yoichiro 2,Hara Kazuhiko 2 |
| £ | 9 | Strong near infrared emission from erbium/bismuth codoped zeolites | Department of Electrical and Electronic Engineering, Kobe University.1, National Institute for Materials Science (NIMS).2, Department of Chemical Science and Engineering, Kobe University.3@*Zhenhua Bai 1, Hong-Tao Sun 2, Takashi Hasegawa 3, Minoru Fujii 1, Fumiaki Shimaoka 1, Yuji Miwa 1, Minoru Mizuhata 3, Shinji Hayashi 1 |
| 10 | Photoluminescence Study of Er-Si-O Compounds | Okayama Univ. 1@Masahiro Higuchi 1,Takeshi Ishiyama 1,Yoichi Kamiura 1,Yoshifumi Yamashita 1 |
| | | Break 15:45`16:00 | |
| 11 | Photoluminescence property of rare earth ions substituted for octahedral site | College of Humanities and Sciences, Nihon Univ. 1@*Fumito Fujishiro 1, Masataka Murakami 1,Takuya Hashimoto 1 |
| 12 | Preparation and optical property of intense luminescent material CuLa1-xEuxO2 | College of Humanities and Sciences, Nihon Univ.@Fumito Fujishiro 1, Masataka Murakami 1, Takuya Hashimoto 1 |
| 13 | Optical characterization of Er-related trap level in Er,O-codoped GaAs | Osaka Univ. 1
ILE Osaka Univ. 2@Tozuka Takuya 1, Terai Yoshikazu 1, Noguchi Kohta 1, Nishikawa Atsushi 1, Kawayama Iwao 2, Tonouchi Masayoshi 2, Fujiwara Yasufumi 1 |
| 14 | 1.5-micrometer Luminescence of Eu2SiS4:Er on Silicon Substrate | Univ. of Electro-Communications 1@*Sugiyama Mitsuharu 1,Nanai Yasushi 1,Okada Yuu 1,Okuno Tsuyoshi 1 |
| ’ | 15 | The effects of the O2 pressure during pulsed laser deposition on the properties of Er2SiO5 | Electro-communications Univ 1@*Iwatani Kenji 1, Kimura Tadamasa 1, Isshiki Hideo 1
|
| 16 | Up-conversion Luminescence Properties of Tm3+-Yb3+ Codoped Tellurite Glasses | Nagoya Inst. Tech.1, Limoges Univ. 2, Toyota Phys. Chem. Res.3@*Hayakawa Tomokatsu1,3, Niimi Haruo1, Vu Phi Tuyen1, Nogami Masayuki1, Jean R-. Duclere2, Philippe Thomas2 |
| 17 | Evaluation of Energy Migration between Er-Er ions of ErxY2-xSiO5 | Univ. Electro-Communications 1, Univ. Electro-Communications, Dept. EE@*Tadamasa Kimura 1, Takayuki Nakajima 2, Yasuhito Tanaka 2, Hideo Isshiki 2 |
| ’ | 18 | ErxY2-xSiO5 crystalline thin films prepared by pulsed laser deposition and their characterization | The Univ. of Electro-Communications@Tanaka Yasuhito 1, Kimura Tadamasa 1,Isshiki Hideo 1 |
| 19 | Development of Mg heavy doped ZnO (s.s.) Blue Phosphors and Application for Luminescent device on Low?voltage | Mie Indust. Res. Inst. 1, Mie Indust. Ent. Sup. Cent. 2, Noritake Itron Corp. 3@*Koji Inoue 1, Tsuyoshi Takiguchi 2,1, Hitoshi Tsuji 3 |
| 20 | Synthesis and characterization of red phosphor using Zn metal as a starting material | Gunma Univ. 1,Graduate School of Engineering, Gunma Univ. 2@Kasa Ryota 1,Arai Yusuke 2,Takahashi Toru 2, Adachi Sadao 2 |
| 21 | Investigation of energy-transfer mechanism in Eu-doped ZnO grown by sputtering-assisted MOCVD | Osaka Univ. 1@*Kazuki Yoshida 1,Muhammad Hakim Kamarudin 1,Yoshikazu Terai 1,Yasufumi fujiwara 1 |
| 14.5 Optoelectric Properties and Devices |
| March 18 9:15`18:30 |
| 18a-TK - 1`12 |
| 1 | Synthesis and Photoluminescence Properties of Chalcogenide CuInS2 Nanocrystals | Inst. Symbiotic Sci. & Tech.@1, Dep. Appl. Phys.@2, Tokyo Univ. Agri. & Tech.@*Masaru Oda@1,2, Shuhei Yamada@2, Tomotari Miyaoka@2, and Toshiro Tani@1, 2 |
| ’ | 2 | Crystallization of CuInS2 precursors by post annealing and application to solar cells | Ritsumeikan Univ. 1@*Kondo Toshihiro 1,Oda Yusuke 1, Fukamizu Shohei 1, Minemoto Takashi 1, Takakura Hideyuki 1 |
| 3 | Enhancement of the flatness of CuInS2
thin films using two stage method | Ristumeikan Univ. 1@Fukamizu Shohei 1,Minemoto Takasi 1,Takakura Hideyuki 1 |
| 4 | Lattice strain in CuInS2 epitaxial films on GaAs substrates | Grad. School of Sci. and Tech., Niigata Univ. 1, Fac. of Eng., Niigata Univ. 2,
Cen. for Transdisciplinary Research, Niigata Univ. 3, Nagaoka Nat. Coll. of Tech. 4
@*Tamogami Takashi 1,Tuboi Nozomu 2,3,Oishi Kouitirou 4,Kaneko Hutao 1,2,3,Kobayashi Satosi 2 |
| 5 | CuInS2 solar cell fabricated by Spray Pyrolysis Deposition | Univ of Hyogo 1,Osaka Gas Co. Ltd. 2@*Toshihiro Ryo 1,Seigo Ito 1,Duy-Cuong Nguyen 1,Hiroaki Matsuyoshi 2
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| ’ | 6 | Effect of Cu/In ratio in the growth of CuInSe2 thin film using paste material | Ritsumeikan Univ. 1, SMM 2@Tsutsumi Keiji 1, Minemoto Takashi 1, Yaginuma Kiyoshi 2, Takakura Hideyuki 1 |
| | | Break 10:45`11:00 | |
| ’ | 7 | High-speed fabrication of CuInSe2 thin-films by electrodeposition | Ritsumeikan Univ. 1@*Mizuno Takanori 1,Matsubayashi Masakazu 1,Oda Yusuke 1,Minemoto Takashi 1,Takakura Hideyuki 1 |
| £ | 8 | Positron annihilation spectroscopy of CuGaSe2 thin film grown by three stage MBE process | Tsukuba University 1,AIST 2
@*M.M.Islam 1, A. Uedono 1, T. Sakurai 1, A. Yamada 2, S. Ishizuka 2 , K. Matsubara 2, S. Niki 2, K. Akimoto 1. |
| £ | 9 | Fabrication of CIS Thin Films by Sulfurization of Electrodeposited Metallic Precursor Films | Osaka Univ. 1, HZB 2@*Sun Min Lee 1, Tetsuro Yagi 1, Ryo Kamai 1, Shigeru Ikeda 1, Ahmed Ennaoui 2, Michio Matsumura 1 |
| £ | 10 | Effect of the Rapid Thermal Annealing on Grained CuInSe2 Absorption Layer for Solar-Cell Application | Univ. of Hyogo1, Shanghai Jiao Tong Univ.2, Daiwa Sangyo Co. Ltd.3@Qinmiao Chen 1,2,3, Seigo Ito 1, Duy-Cuong Nguyen 1, Xiaoming Dou 2,3, Tomitarou Harada 3 |
| £ | 11 | Fabrication of CuInSe2-based Narrow Bandgap Solar Cells by Mechanochemical Synthesis and Printing Method | Univ. of Hyogo 1@Duy-Cuong Nguyen 1, Seigo Ito 1 |
| 12 | Pulse Electrodepositing Fabrication of CuInSe2 Solar Cells | Univ. of Hyogo 1, IMRA MATERIAL CO., LTD. 2@Noriyuki Kitagawa1, Seigo Ito1, Duy-Cuong Nguyen1, Sinji Nezu2, Daisuke Koga2 |
| | | Lunch 12:30`13:30 | |
| 18p-TK - 1`19 |
| 1 | Electrochemical Fabrication of CuIn(Se,S)2 Thin Films | Osaka Univ.@*Yagi Tetsuro,Kamai Ryo,Sun Min LEE,Ikeda Shigeru,Michio Matsumura |
| 2 | Theoretical and Experimental Evaluation of Cu(InGa)Se2 Solar Cells Under Concentrating Sunlight | Physical Electronics Tokyo Tech. 1,PVREC Tokyo Tech. 2@*Nagashima Hiroshi 1,Yamada Akira 1 2,Konagai Makoto 1 2 |
| ’ | 3 | Growth of CuInGaSe2 films by RF sputtering | Miyazaki Univ. 1,Mitsubishi Material Corporation 2@*Tokuda Takahiro 1,Harada Syun 1,Nagaoka Akira 1,Yoshino Kenji 1,Miseki Ken-ichiro 2,Mori Rie 2,Zhang Shoubin 2,Doutyoku Shigeo 2 |
| ’ | 4 | Fabrication of Cu(In,Al)S2 thin films with different Al/(In+Al) ratios by high vacuum evaporation | Ritsumeikan Univ. 1@*Oda Yusuke 1, Kondo Tosihiro 1, Fukamizu Shohei 1, Minemoto Takashi 1, Takakura Hideyuki 1 |
| 5 | Flexible (Zn,Mg)O/Cu(In,Ga)Se2 Solar Cells Using Lift-Off Process | Ritsumeikan Univ.@*Yasuhiro Abe 1, Takashi Minemoto 1, Shintaro Osada 1, Hideyuki Takakura 1 |
| ’ | 6 | Fabrication of Cu(In,Ga)Se2 solar cells with ZnO1-xSx window layers by sputtering | Ritsumeikan Univ. 1@Okamoto Akira 1,Minemoto Takashi 1,Takakura hideyuki 1 |
| 7 | Correlation between Grain Boundary Type and Local Resistance in CIGS Thin-Film Solar Cells | Foundation for Promotion of Material Science and Technology of Japan 1@*Naoaki Takano 1, Yoko Kusaba 1, Yota Nishikawa 1, Kunihiro Funatsu 1, Hiroko Abe 1 |
| 8 | Influence of grain boundary and crystal defects on electrical potential distributions in absorber layer of CIGS thin-film solar cells | Foundation for promotion of Material Science and Technology of Japan 1@Yoko Kusaba 1, Yoshiyuki Tashiro 1, Daisuke Hashimoto 1, Kunihiro Funatsu 1, Toru Yamazaki 1, Masami Okita 1, Tomohiro Ohsugi 1 |
| 9 | Analysis of Cu(In1-X,GaX)Se2's grain boundaries by EBIC and EBSD methods | Dept.Physical Electronics,Tokyo Tech. 1,Photovoltaics Research Center(PVREC),Tokyo tech. 2@*Oonishi Satoshi 1,Kawamura Masahiro 1,Yamada Akira 1 2,Konagai Makoto 1 2 |
| 10 | Structural evaluation of a Zn(S,O,OH) buffer layer and junction interface in CIGS thin-film solar cells | Foundation for promotion of Material Science and Technology of Japan 1, Tokyo Inst. of Technology 2,
PVERC 3@*Yoshiyuki Tashiro 1, Masahiro Ohtsuka 1, Kazunari Shibuya 1, Toru Yamazaki 1, Masayuki Funaki 1, Yukiya Hidaka 2, Akira Yamada 2,3, Makoto Konagai 2,3 |
| | | Break 16:00`16:15 | |
| 11 | Preparation of Cu(In,Ga)S2 thin films by spray pyrolysis deposition | Panasonic Electric Works 1, AIST 2@Yamamoto Teruaki 1, Negami Takayuki 1, Matsubara Koji 2, Niki Shigeru 2 |
| 12 | CIGS solar cells prepared using an rf-plasma cracked radical Se beam source | AIST 1@Shogo Ishizuka 1, Akimasa Yamada 1, Shigeru Niki 1 |
| 13 | Na-induced variations in CIGS thin-film properties | AIST RCPV 1, AIST NeRI 2@Shogo Ishizuka 1, Akimasa Yamada 1, Hajime Shibata 2, Shigeru Niki 1 |
| 14 | Monolithically integrated CIGS modules on flexible substrates | AIST 1@Shogo Ishizuka 1, Takashi Yoshiyama 1, Kazuyuki Mizukoshi 1, Akimasa Yamada 1, Shigeru Niki 1 |
| 15 | The Effect of ZnMgO/CdS Buffer Combination in CIGS solar cells | Aogaku Univ. 1@Yuya Honishi 1,Yuta Yatsushiro 1, Takahiro Mise 1, Tokio Nakada 1 |
| 16 | Effect of band offset in ZnO1-xSx/Cu(In,Ga)Se2 solar cells | Ritsumeikan Univ.@*Minemoto Takashi 1, Okamoto Akira 1, Takakura Hideyuki 1 |
| ’ | 17 | Band Profiling around Grain Boundary on CIGS Solar Cells | IIS, Univ. of Tokyo 1, INQIE, Univ. of Tokyo 2, Ritsumeikan Univ. 3@*Takihara Masaki 1, Takahashi Takuji 1,2, Wakisaka Youich 3, Minemoto Takashi 3 |
| 18 | Characterization of Electronic Structure of Grain Boundaries in CIGS based Solar Cells by Kelvin Probe Force Microscopy | Kagoshima Univ. 1, AIST 2@* Fukae Tomoka 1, Ichiki Hayato 1, Takamori Sinpei 1, Kashiwabara Hirotake 1,
Okuda Tetuzi 1, Yamada Akimasa 2, Ishizaka Shogo 2,Matubara Koji 2, Niki Shigeru 2,
Terada Norio 1, 2 |
| 19 | Characterization of Cu(In,Ga)Se2 solar cell using the two dimensional LBIC-PL mapping system (?) | Ehime Univ. 1, Aoyama Gakuin Univ, 2@MorisadaTatsushi 1, Shirakata Sho 1, Miyata Akira 1, Nakada Tokio 2 |
| 14.5 Optoelectric Properties and Devices |
| March 19 9:30`12:00 |
| 19a-TF - 1`9 |
| 1 | Characterization of Mn ion-activated K2SiF6 yellow-red emitting phosphor | Gunma Univ.1,Graduate school of engineering,Gunma Univ.2@*Arai Takahiro 1,Arai Yusuke 2,Takahasi Toru 2,Adachi Sadao 2 |
| 2 | Synthesis and Luminescence Properties of SrSi2O2N2:Eu2+ and Sr2Si5N8:Eu2+ Phosphors using Alloys | Osaka Univ. 1, Osaka Univ. 2@*Machida Ken-ichi 1, Lei Bingfu 1, Yun Bonggoo 1, Horikawa Takashi 1, Hanzawa Hiromasa 2 |
| 3 | Synthesis and Luminescence Properties of CaAlSiN3:Eu2+ Phosphors using CaH2 | Osaka Univ. 1, Osaka Univ. 2, Mitsubishi Chem. 3@*Machida Ken-ichi 1, Lei Bingfu 1, Horikawa Takashi 1, Hanzawa Hiromasa 2, Naoto Kijima 3, Shimomura Yasuo 3 |
| 4 | Investigation of Ce concentration in YAG:Ce3+ phosphor prepared by liquid phase reaction | Graduate School of Engineering Tottori Univ.1, TEDREC 2, Merck Ltd. 3@*Murakawa Takuro 1, Okura Hiroshi 1,3, Miyamoto Yoshinobu 1,2, Ohmi Koutoku 1,2 |
| 5 | Micro-reaction System for Preparing White LED Phosphors | Tottori Univ. 1, TEDREC 2, Merck Ltd. 3@*Hiroshi Okura 1,3, Takuro Murakawa 1, Yoshinobu Miyamoto 1,2, and Koutoku Ohmi 1,2 |
| | | Break 10:45`11:00 | |
| £ | 6 | Optical Properties of Blue-emitting CexSi6-zAlz-xOz+1.5xN8-z-x???(beta-SiAlON:Ce) phosphor | Nano Ceram. Cent. , NIMS 1, NEU (China) 2@Lihong Liu 1,2, Rong-Jun. Xie 1, Naoto Hirosaki 1, Takashi Takeda 1, Chenning Zhang 2, Jiguang Li 2, Xudong Sun 2 |
| £ | 7 | Cathodoluminescence of the green beta-sialon:Eu2+ phosphor | NIMS Nano Ceram. 1, NIMS Semicond. 2@*Rong-Jun Xie 1, Naoto Hirosaki 1, Takashi Takeda 1, Benjamin Dierre 2 Takashi Sekiguchi 2 |
| 8 | Rare Earth Coordination Structure and Luminescence in Alpha-Sialon Phosphor | NIMS 1, JAEA 2@*Takeda Takashi 1,Hirosaki Naoto 1, Xie Rong-Jun 1, Matsusita Yoshitaka 1, Igawa Naoki 2 |
| 9 | Luminescent properties of emissive LCD test panels | Tottori Univ. 1,
TEDREC 2,
EPSON IMAGING DEVICES Corp. 3,
LEIZ LINE Corp. 4@*Tatsuya Yata 1,3,
Yoshinobu Miyamoto 1,2,
Kazuhiko Matsumoto 4,
Jun-ichi Nishiura 4,
Norio Koma 3,
Koutoku Ohmi 1,2 |
| 14.5 Optoelectric Properties and Devices |
| March 20 9:00`15:00 |
| 20a-TE - 1`11 |
| £ | 1 | Two-step saturation behaviour in quantum-dot-based vertical-cavity all-optical switches | CREATE, Kobe Univ. 1, Graduate School of Engineering, Kobe Univ. 2, Univ. of Sheffield (UK) 3, National Institute of Information and Communications Technology, Tokyo 4@*C. Y. Jin 1, O. Kojima 2, T. Inoue 2, S. Ohta 2, T. Kita 2, O. Wada 1, 2, M. Hopkinson 3, K. Akahane 4 |
| 2 | Comparison of the photoluminescence spectra between quantum well structure and quantum dots structure | Japan Women's Univ. 1@*Esaki Miyuki 1,Inaba Naoko 1,Fukuda Ayako 1,Imai Hajime 1 |
| 3 | Optical characteristics of ultrathin SOQ pin diode | Bio-Nano Electronics Research Centre, Toyo Univ. 1@*Tanimura Takayuki 1, Nakajima Yoshikata 1, Hanajiri Tatsuro 1 |
| 4 | Ultrahigh efficient extraction of semiconductor emission realized by coupling of evanescent waves in a nonplanar substrate | AIST@*Wang Xue-Lun, Enderlin Alexandre, Ravaro Marco |
| 5 | Synthesis and bandgap characteristic of inverted type-I ZnSe/CdSe quantum dot | Tokyo Tech. 1@Hara Takahito 1, Ishikawa Masamichi 1 |
| 6 | Energy Transfer from Blue-Emitting Oxidized Porous Silicon to Adsorbed Dye Molecules | Hyogo Univ. of Teacher Educ. 1, Tokyo Univ. of Agri. and Tech. 2, Fac. des Sci. de Tunis 3@*Hideki Koyama 1, Bernard Gelloz 2, Noboru Harima 1, Habib Elhouichet 3, Nobuyoshi Koshida 2 |
| 7 | Fabrication of Si nanowires by chemical etching in AgNO3/HF mixture | Graduate School of Engineering, Gunma Uni 1@*Kobayashi Yasushi M1,Adachi Sadao |
| 8 | Preparation and evaluation of highly luminescent silica particles impregnated with number-adjusted CdTe nanocrystals | Adv. Indust. Sci. & Tech.@Murase Norio 1, Yang Ping 1 |
| 9 | Dependence of Photoluminescence from a-Si:H Nanoball Films on Annealing Temperature | Waseda Univ. 1@*Saito Yusuke 1,Kato Isamu 1 |
| 10 | Dependence of photoluminescence from a-SiNH nanoball films on substrate temperature during fabrication | Waseda Univ. 1@*Yoshida Tatsuki 1,Suto Kunimi 1,Kato Isamu 1 |
| ’ | 11 | Fabrication of nano-crystalline silicon particles by chemical etching technipue | Tokyo Denki Univ. 1,2@*Yokosuka Shinobu 1, Niino Kazuki 1, Hirakuri Kenji 2 |
| | | Lunch 11:45`12:45 | |
| 20p-TE - 1`9 |
| 1 | Dependence on annealing temperature of Cu2ZnSnS4 thin films prepared by sol-gel sulfurizing method | Nagaoka Univ. Tech. 1@*Maeda Kazuya 1, Tanaka Kunihiko 1, Fukui Yuki 1, Uchiki Hisao 1 |
| 2 | Preparation of Cu2ZnSnS4 thin film solar cells under non-vacuum condition: dependence on hydrogen sulfide concentration | Nagaoka Univ. Tech. 1@Fukui Yuki 1, *Maeda Kazuya 1, Tanaka Kunihiko 1, Uchiki Hisao 1 |
| ’ | 3 | First principles calculation of defect formation in Cu2ZnSnSe4 and Cu2ZnSnS4 | Department of Materials Chemistry, Ryukoku Univ.@*Maeda Tsuyoshi 1, Nakamura Satoshi 1, Wada Takahiro 1 |
| 4 | Phase stability and electronic structure of In-free photovoltaic materials Cu2ZnSiSe4, Cu2ZnGeSe4 and Cu2ZnSnSe4 | Department of Materials Chemistry, Ryukoku Univ. 1@*Nakamura Satoshi, Maeda Tsuyoshi, Wada Takahiro |
| 5 | Preparation of Cu2ZnSnS4 Thin Film by Non-Vacuum and Non-Sulfurizing Process | Nagaoka Univ. Tech.1@*Kenichi Tachi 1, Kunihiko Tanaka 1, Hisao Uchiki 1 |
| 6 | Photoelectrochemical properties for water splitting of Cu2ZnSnS4 (CZTS) thin films | Univ Tokyo 1, Nagaoka NCT 2@Yokoyama Daisuke 1, Minegishi Tsutomu 1, Jimbo Kazuo 2, Maeda Kazuhiko 1, Katayama Masao 1, Kubota Jun 1, Katagiri Hironori 2, Domen Kazunari 1 |
| 7 | Cu2ZnSnS4 thin film solar cells doped with Ga | Shinshu Univ. 1, Nagano National Coll.of Tech. 2@*Igarashi Shigeo 1, Seki Takuro 1, Momose Noritaka 2, Hashimoto Yoshio 1, Ito Kentaro 1 |
| 8 | Growth of Cu2ZnSnS4 thin films grown by multisource evaporation | Nagaoka National Coll. Technol.@*Hoshino Yuto 1,Oishi Koichiro 1,Jimbo Kazuo 1,Katagiri Hironori 1,Yamazaki Makoto 1,Araki Hideaki 1,Takeuchi Akiko 1 |
| 9 | NiSi thin films for back electrode layer of Cu2ZnSnS4 thin film solar cells | Nagano National Coll. of Tech. 1, Shinshu Univ. 2@*Noritaka Momose 1, Kunihiro Amino 1, Takuto Yudasaka 1, Takuro Seki 2, Shigeo Igarashi 2, Yoshio Hashimoto 2, Kentaro Ito 2
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| 14.5 Optoelectric Properties and Devices |
| March 20 9:15`14:45 |
| 20a-TF - 1`12 |
| 1 | Photoluminescence of SrGa2S4:Sn,Re(=Ce,Gd) phosphors | Thokyo Denki Univ. 1, NHK Sci. & Tech. Labs. 2@*Nagata Mutsumi 1, Okamoto Shinji 2, Tanaka Katsu 2, Sakai Toshikatsu 2, Tamaki Akira 1 |
| 2 | Laser shot counts dependence of CL properties of laser annealed SrGa2S4:Eu2+ thin film phosphors | Res. Inst. of Electronics, Shizuoka Univ. 1, JSW Ltd. 2, Aichi Univ. of Technology 3@*Yamasaki Takahisa 1, Seino Toshiaki 2, Kominami Hiroko 1, Nakanishi Yoichiro 1, Hatanaka Yoshinori 3, Hara Kazuhiko 1 |
| 3 | ESR study of the sites of Mn2+ and Eu2+ in CaGa2S4 | Nihon Univ. 1, Tokyo Univ. of Science 2@*Toshimitsu Obonai 1,Chiharu Hidaka 1,Takeo Takizawa 1,Shigetaka Nomura 2 |
| 4 | Effect of rare earth ion co-doping on the red emission from CaGa2S4:Mn2+ and its decay time | Nihon Univ.1,Tokyo Univ. of Science 2@*Suzuki Akihiro 1,Obonai Toshimitsu 1,Nomura Shigetaka 2,Hidaka Chiharu 1,Takizawa Takeo 1 |
| 5 | Luminescence Properties of Mn-doped Eu-thiosilicate | Univ. of Electro-Communications@*Yasushi Nanai 1,Mitsuharu Sugiyama 1,Yuu Okada 1,Tsuyoshi Okuno 1 |
| 6 | Improvement in photoluminescence characteristics by doping Mg in CuAlS2:Mn, Si red phosphor for near UV excitation | TEDREC 1, Graduate School of Engineering, Tottori Univ. 2, NEC Lighting, Ltd. 3@*Miyamoto Yoshinobu 1,2, Ohashi Kazuhito 2, Ohmi Koutoku 2, Yoshida Hisashi 3 |
| | | Break 10:45`11:00 | |
| 7 | Optical Property of ZnS-based Inorganic EL Phosphor
Sintered by Microwave in Vacuum
| NAIST 1,Image Tech Inc. 2,CREST 3@*Shogo Horiguchi 1,Yusuke Kobayashi 1,Masahiro Horita 1,Nobuyoshi Taguchi 2,Yukiharu Uraoka 1,3 |
| 8 | EL Device using ZnS:Mn2+ nanopowders synthesized from chemical solutions | Gunma Univ.@Sato Koichi, Miyazaki Takayuki, Adachi Sadao |
| 9 | Top-emission EL devices utilizing solution-processed ZnO nanocrystal | Osaka Univ. 1@*Kawasaki Hayato 1, Itatani Kazuki 1, Toyama Toshihiko 1, Okamoto Hiroaki 1 |
| 10 | Improvement in crystallographic characteristics by depositing on Sn-based compound layer in blue phosphor
Ba2SiS4:Ce thin films for inorganic EL devices | Graduate School of Engineering Tottori Univ.1, TEDREC 2@*Koshiba Takahiro 1, Yamashita Yudai 1, Miyamoto Yoshinobu 1.2, Ohmi Koutoku 1 |
| 11 | PL and EL characteristics in rare earth-co-doped La2O3:Bi phosphor thin films | O.E.D.S. R&D Center, Kanazawa I.T. 1@*Sahara Keiichi 1, Miyata Toshihiro 1, Minami Tadatsugu 1 |
| 12 | PL and EL characteristics in Bi-activated ((La2O3)1-x](Ga2O3)x)multicomponent oxide thin films | O.E.D.S R&D Center, Kanazawa Institute of Technology@*Junichi Ishino 1,Keiichi Sahara 1,Toshihiro Miyata 1,Tadatsugu Minami 1 |
| | | Lunch 12:30`13:30 | |
| 20p-TF - 1`5 |
| 1 | Optical properties of exciton in hexagonal boron nitride at low temperature | NIMS 1@*Watanabe Kenji 1, Taniguchi Takashi 1 |
| 2 | Chemical vapor synthesis and luminescence characterization of hexagonal BN powders | Shizuoka Univ.1,Shizuoka Univ.2,Shizuoka Univ.3,Shizuoka Univ.4,Shizuoka Univ.5@*Kawanishi Yasumasa 1,Yamauchi Manabu 2,Kominami Hiroko 3,Nakanishi Youichirou 4,Hara Kazuhiko 5 |
| 3 | Growth temperature dependence of Eu-doped GaN grown by organometallic vapor phase epitaxy (?) | Osaka Univ. 1,Lehigh Univ. 2,Osaka Univ.ISIR 3@*Furukawa Naoki 1,Nishikawa Atsushi 1,Kawasaki Takashi 1,Anada Satoshi 1,Woodward Nathaniel 2,Dierolf Volkmar 2,Tambo Hiroyuki 3,Emura syuichi 3,Asahi Hajime 3,Terai Yoshikazu 1,Fujiwara Yasufumi 1 |
| 4 | Thin Film Optical Light Amplifier Using Rare Earth Doped III-Nitride | Toyohasi University of Technology 1,JAEA 2@*Sugimoto Kazunori 1,Okada Hiroshi 1, Wakahara Akihiro 1, Sato Shinichiro 2, Ohshima Takeshi 2 |
| 5 | Influence of Local Structure on Light-Emission Efficiency of Deep-UV Phosphor AlGdN | Kobe Univ. 1,YUMEX Inc. 2,Hyogo Prefectural Inst. of Tech. 3,
@Shinya Kitayama 1,Hiroaki Yoshitomi 1,Takashi Kita 1,Osamu Wada 1,Yoshitaka Chigi 2, Tetsurou Nishimoto 2,Hiroyuki Tanaka 2,Mikihiro Kobayashi 2,Tsuguo Ishihara3,Hirokazu Izumi 3
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