| 13 Semiconductors A (Silicon) |
| Review Lectures「今後のLSI配線における金属材料技術」 |
| March 19 13:30～17:15 |
| 19p-D - 1～8 |
| |
1 |
Reliable interconnect technology in coming fine features devices and new directions |
Selete 1 Ogawa Shinichi 1 |
| 2 | Reliability of Cu/Low-k multilayer interconnects | Fujitsu Laboratories Ltd. *Nakamura Tomoji 1, Suzuki Takashi 1 |
| ▲ | 3 | Electrical and mechanical reliability of Cu and Au Microbump for Fine Pitch Packaging | Seoul National Univ. 1, Andong National Univ. 2, Amkor Technology Korea Inc. 3 *Young-Chang Joo 1, Byoung-Joon Kim 1, Myeong-Hyeok Jeong 2, Jae-Won Kim 2, Kiwook Lee 3, Jaedong Kim 3, and Young-Bae Park 1 |
| 4 | TSV technology development for DRAM | Elpida Memory, Inc. Ikeda Hiroaki |
| | | Break 15:15～15:30 | |
| 5 | TSV Technology from Reliability Standpoint | ASET Takeda Kenichi1 |
| 6 | Electromigration and critical current densities at metallic nanojunctions in the ballistic regime | IIS Univ. of Tokyo 1, INQIE Univ. of Tokyo 2, CREST JST 3 K. Hirakawa 123, A. Umeno 1, K. Yoshida 1, and S. Sakata 1 |
| 7 | Nanofabrication of nanostructure for electronic devices | NAIST、ATRL Panasonic Ichiro Yamashita |
| 8 | Closing talk | TOSHIBA CORPORATION Masahiko Hasunuma |
| 13.1 Fundamental Materials Characterization and Evaluation |
| March 18 13:00～16:30 |
| 18p-C - 1～13 |
| 1 | Laser-assisted atom probe microscopy of isotopic distributions in silicon isotope superlattices with high spatial resolution | Keio Univ. 1, Corporate R&D Center, Toshiba Corp. 2, Toshiba Nanoanalysis Corp. 3 *Yasuo Shimizu 1, Yoko Kawamura 1, Masashi Uematsu 1, Kohei M. Itoh 1, Mitsuhiro Tomita 2, Mikio Sasaki 3, Hiroshi Uchida 3, Mamoru Takahashi 3 |
| 2 | Investigation of dopant distribution of the MOS structure having the gate pattern by laser 3D atom-probe
| IMR Tohoku Univ. 1,MIRAI-Selete 2 *Takamizawa Hisashi 1,Inoue Koji 1,Yano Fumiko 2,Tsunomura Takaaki 2,Nishida Akio 2,Toyama Takeshi 1,Nagai Yasuyoshi 1,Hasegawa Masayuki 1
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| 3 | Influence of Multi-hit Capability on Quantitative Measurement Using Laser-assisted Three-dimensional Atom Probe | Toshiba R&D Center 1, Toshiba Semicon. Co. 2, CAMECA 3 Kinno Teruyuki 1, Akutsu Haruko 1, Tomita Mitsuhiro 1, Kawanaka Shigeru 1, Sonehara Takeshi 2, Hokazono Akira 1, Renaud Ludovic 3, Martin Isabelle 3, Benbalagh Rabah 3, Sall? Beatrice 3, Schuhmacher Michel 3, Takeno Shiro 1 |
| 4 | First-Principles Calculation for Behavior of Vacancy in Ge/Si(100) Interface | Okayama Pref.Univ.,Dept. of System Engineering *Takahiro Maeta 1,Seiji Shiba 1,Koji Sueoka 1 |
| 5 | First-principles evaluation of the valence band offset for the Si(001)/ La2O3 (01-10) interface | The Univ. Electro-Communications (UEC-Tokyo) 1 *Ryosuke Yanai 1, Jun Nakamura 1, Akiko Natori 1 |
| 6 | Determination of Valence Band Offsets for SiO2/Si/SiGe0.5/Si Heterostructures | Hiroshima Univ. 1, Tohoku Univ. 2 Ohta Akio 1, Makiharas Katsunori 1, Miyazaki Seiichi 1, Masao Sakuraba 2, Junichi Murota 2 |
| | | Break 14:30～14:45 | |
| 7 | Stable position of a boron cluster near Si surface (2) | Tokyo City Univ. 1, Advanced Research Lab., Hitachi Ltd. 2 Ito Shunsuke 1, Maruizumi Takuya 1, Suwa Yuji 2 |
| 8 | Charge analysis of chemical shift of silicon induced by titanium | Fac. of Eng'g, Yokohama Nat'l Univ. *Ken-ichi Shudo, Takeshi Aoki |
| 9 | First-principles calculations for the structural stability and electronic states of Er2SiO5 | The Univ. of Electro-Commu. (UEC Tokyo) *Ueda Hiroshi ,Nakamura jun ,Natori Akiko ,Issiki Hideo |
| 10 | Influence of SiOH groups on lattice-interstitial oxygen exchange in amorphous SiO2 | JST 1, TMU 2, OMRON Laserfront 3, Tsukuba Univ. 4, TITech 5, Univ. Latvia 6 *Koichi Kajihara 1,2, Taisuke Miura 3, Hayato Kamioka 4, Masahiro Hirano 1,5, Linards Skuja 1,6, Hosono Hideo 1,5 |
| 11 | Evaluation of SiO2 gate film characteristics fabricated at different process by Pulse-Photoconductivity Method | Kumamoto University Graduate School of Science and Technology 1, Kumamoto Univ. 2 *Nishi Yuya 1, Matsumura Yasushi 2, Hirano Toshimasa 1, Hamaguchi Seiji 1, Shiotsu Keisuke 1, Yoshioka Masao 2, Kubota Hiroshi 1 |
| 12 | Fabrication of HfO2/Si structure by the ultra high vacuum (UHV) sputtering | Tokyo Univ.of Agri.&Tech. *Nagatuka Yasuaki1,Iwasaki Yoshitaka1, Ueno Tomoo1 |
| ▲ | 13 | Numerical irreversibility in many particle systems | Univ. of Electro-Communications 1 *WANG, Xiaoxing 1, MATUTTIS, Hans-Georg 1 |
| 13.1 Fundamental Materials Characterization and Evaluation |
| March 19 9:00～16:30 |
| 19a-C - 1～11 |
| 1 | P-ion implantation in Si nanowires | Univ. of Tsukuba 1,NIMS 2,JSTPRESTO 3 *Ishida Shinya 1,Saito Naoyuki 1,Yokono Shigeki 1,Fukata Naoki 2,3,Chen Jing 2,Sekiguchi Takashi 2,Hishita Shunichi 2,Murakami koichi 1 |
| 2 | Effect of O2+ ion implantation in Si nanowires | Tsukuba Univ. 1,NIMS 2,JST PRESTO 3 *Shigeki Yokono 1,Naoyuki Saito 1,Shinya Ishida 1,Naoki Fukata 2,3,Jun Chen 2,Takashi Sekiguchi 2,Syunichi Hishita 2,Kouichi Murakami 1 |
| 3 | Formation of PtAl Nanodots Induced by Remote Hydrogen Plasma | Grad. School of Advanced Sciences of Matter, Hiroshima Univ.1 *Ryuuhei Ashihara 1, Katsunori Makihara 1, Akira Kawanami 1, Mitsuhisa Ikeda 1, Akio Ohta 1,Seiichi Miyazaki 1
|
| △ | 4 | Formation of High Density Ge Quantum Dots on SiO2
| Hiroshima Univ. *Katsunori Makihara 1, Mitsuhisa Ikeda 1, Akio Ohta 1, Akira Kawanami 1, Seiichi Miyazaki 1 |
| 5 | Charging and Magnetizing Charcteristics of Co Nanodots | Grad. School of Advanced Sciences of Matter, Hiroshima Univ. 1 *Akira Kawanami 1,Katsunori Makihara 1,Mitsuhisa Ikeda 1,Ryuuhei Ashihara 1 and Seiichi Miyazaki 1 |
| △ | 6 | Absorption Coefficient of <100> and <111> Si-Nanowires Calculated by Density Functional Theory | Kyoto Univ. *Yoshioka Hironori 1, Morioka Naoya 1, Suda Jun 1, Kimoto Tsunenobu 1 |
| | | Break 10:30～10:45 | |
| △ | 7 | Evaluation of anisotropic biaxial stress by Raman spectroscopy with a high NA immersion objective lens | Meiji Univ. 1, PHOTON Design 2, JSAP Research Fellow 3 *Kosemura Daisuke 1,3, Takei Munehisa 1, Nagata Kohki 1, Akamatsu Hiroaki 1, Shimidzu Ryosuke 2, Ogura Atsushi 1 |
| 8 | Evaluation of Global/Local Strained-Silicon by EBSP | Meiji Univ. 1,JSPS Research Fellow 2 *Motohiro Tomita 1,Daisuke Kosemura 1,2,Munehisa Takei 1,Kohki Nagata 1,Hiroaki Akamatsu 1,Atsushi Ogura 1 |
| △ | 9 | Channel strain analysis of damascene-gate MOSFET by Raman spectroscopy equipped with immersion lens. | Meiji Univ. 1, JSAP Research Fellow 2 *Takei Munehisa 1,Kosemura Daisuke 1,2, Nagata Kohki 1, Akamatsu Hiroaki 1,Ogura Atsushi 1 |
| 10 | Mechanical Stress Evaluation in Si-MOSFET Structure using Polarized UV Raman Spectroscopy | NIRC AIST 1,FML 2 *Satoh Akira 1,Poborchii Vladimir 1,Tada Tetsuya 1,Kanayama Toshihiko 1,Satoh Shigeo 2,Arimoto Hiroshi 1 |
| △ | 11 | Experimental Studies on Vibration of Micro Cantilever by Laser Irradiation | Dep. of Elec. Eng., Kyoto Univ. Jimin Oh , Nobuo Satoh , Takashi Hikihara |
| | | Lunch 12:00～13:00 | |
| 19p-C - 1～13 |
| 1 | Temperature dependence of LSI chip warpage in flip-chip packaging | Device Platforms Res. Labs., NEC Corporation 1 *Akio Toda 1, Nobuyuki Ikarashi 1 |
| 2 | Electrical properties of 2-MeV electron irradiated p-type Si1-xGex MOSFETs | Kumamoto National College of Technology 1, IMEC 2 Kenichiro Takakura 1, Hidenori Ohyama 1, Mileiya Gonzalez 2, Eddy Simoen 2, Cor Claeys 2 |
| 3 | Characteristics of Pt/n-Si Schottky barrier photodiodes in short wave length | Gunma Univ. 1 Hidenori Katou 1,Katsuya Noguchi 1, Kazuo Itoh 1 |
| 4 | Development of high voltage C-V, DLTS tester for power devices. | S. H. I. Examination & Inspection, Ltd. 1,YES Co., Ltd. 2,Aichi Inst. of Tech. 3 *Ito Jyoji 1,Inoue Takeshi 1,Sakane Hitoshi 1,Yano Yasuhiro 2,Nakai Masafumi 3,Nagae Youichi 3,Tokuda Yutaka 3 |
| 5 | Measurement of Minority Carrier Lifetime by Microwave Absorption with Pulsed Light Irradiation
| TUAT *Tomokazu Nagao 1, Jun Takenezawa 1, Masahiko Hasumi 1, Tosiyuki Sameshima 1 |
| 6 | Development of Hard X-ray Photoelectron Spectroscopy System and Applications to Semiconductor | NIMS 1, NAIST 2, ULVAC PHI 3, Tokyo City Univ. 4 Kobayashi Keisuke 1, Kobata Masaaki 1, Iwai Hideo 1, Pis Igor 1, Matsuda Hiroyuki 2, Daimon Hiroshi 2, Yamazui Hiromichi 3, Takahashi Hiroaki3, Suzuki Mineharu 3, Nohira Hiroshi 4 |
| | | Break 14:30～14:45 | |
| 7 | Evaluation of work functions of TaN and W thin films by EUPS | AIST NIRC *Teruhisa Ootsuka 1, Tomoaki Ishitsuka 1, Takeshi Kasai 1, Hiroyuki Ota 1, Toshihisa Tomie 1 |
| 8 | Dependences of work function of TiN on thickness and high-k material evaluated by EUPS | AIST NIRC, Hitachi Kokusai Electric Tomoaki Ishituka1, Teruhisa Ootsuka1, Takeshi Kasai1,
Arito Ogawa2, Tsuyoshi Horikawa1, ○Toshihisa Tomie1
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| 9 | Evaluation of thickness dependence of metallic property of TaN thin films by EUPS | AIST NIRC 1 *Ishitsuka Tomoaki 1,Ootsuka Teruhisa 1,Kasai Takeshi 1,Ota Hiroyuki 1,Tomie Toshihisa 1 |
| 10 | Electron spin resonance of palladium-hydrogen complexes in silicon | Okayama Univ. 1 *Takeshi Ishiyama 1, Shutaro Kimura 1, Yuuya Mori 1, Yoichi Kamiura 1, Yoshifumi Yamashita 1 |
| 11 | Correlative distribution of Sb dopant atoms in Si crystal studied by Scanning Transmission Electron Microscope (STEM) | Tokyo Tech1, JST-CREST2 S. Kim1, Y. Oshima1,2, Y. Tanishiro1,2, K. Takayanagi1,2 |
| 12 | Brilliantly Colorful Surface Film (BCSF) on Selectively Anodized Porous Silicon | Toyota Technological Inst. 1, Hamamatsu Photonics 2 *Nagata Seiichi 1, Murata Jun-ichi 2 |
| 13 | Multielement Determination of Ultratrace Impurity Elements in High Purity Metals and High Purity Organo-Metal Compounds by ICP-MS | Inorganic Composition Analysis Laboratory, UBE Scientific Analysis Laboratory Inc. *Shuji Kozono 1,Takanori Tsuchie 1,Kazuya Harunaga 1,Masaki Aikawa 1,Toshiaki Kanefuji 1 |
| 13.2 Surface |
| March 20 9:00～14:45 |
| 20a-C - 1～11 |
| 1 | Rapid Initial Oxidation of Silicon up to 2nm Thickness | Hirosaki Univ. 1 *Enta Yoshiharu 1, Nakazawa Hideki 1, Osozawa Ryoichi 1, Sato Sumiya 1, Kato Hiroo 1, Sakisaka Yasuo 1
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| 2 | Relationship between dipole and Si oxidation states at the HfO2/Si interfaces | AIST *Miyata Noriyuki 1, Yasuda Tetsuji 1 |
| △ | 3 | Analysis of chemical structure of H-terminated Ge(111) surface | Hiroshima Univ. 1 *Yuto Nshiyama 1, Hitoshi Suzuki 1, Takayuki Takahagi 1, Hiroyuki Sakaue 1 |
| 4 | oxidation and etching at noble matal/germanium interface immersed in pure water | Osaka Univ. 1 *Kawase tatsuya 1, Dei katsuya 1, Uchikoshi Junichi 1, Morita Mizuho 1, Arima Kenta 1 |
| 5 | Pattern formation on Silicon surface with catalysis of silver nano particle using no chemical resistant oil-based ink as etching mask
| Miyazaki Univ. 1 *Sueto Tsuyoshi 1,Nishioka Kensuke 1 |
| 6 | Formation of Micro-holes in Silicon Wafers Using Anodized Needle Electrodes | Osaka Univ. 1, Ritsumeikan Univ. 2 *Sugita Tomohiko 1, Hirai Takeshi 2, Matsumura Michio 1 |
| | | Break 10:30～10:45 | |
| △ | 7 | The electrochemical etching of Ru film by NH4Cl solution | Osaka Univ. 1, STARC 2 *L. Yang1, H. Aoki1, M. Hara1, M. Yashimaru2, M.Yamaguchi2,
I.Kanno2, M.Tanaka2, C. Kimura1 and T. Sugino1
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| 8 | Characterization of anodic-oxidized films on hydrophilicity-controlled substrates | Yokohama National Univ. 1 *Nakamura Masaya 1, Kashiwase Yuta 1, Ogino Toshio 1 |
| 9 | Analysis of Si(001) etching by H radicals - First-principles molecular-dynamics simulation of absorption structure - | Osaka Univ., CREST-JST *Inagaki Kouji 1 2, Kanai Ryota 1, Hirose Kikuji 1, Yasutake Kiyoshi 1 2 |
| 10 | Mechanism of hole inlet closure on Si(001) substrates by high temperature hydrogen annealing | Fuji Electric Holdings Co.,Ltd. 1,Fuji Electric Systems Co.,Ltd. 2,ISIR,Osaka Univ.3 *Reiko Hiruta 1,Ryosuke Shimizu 1,Hitoshi Kuribayashi 2,Koichi Sudoh 3,Hiroshi Iwasaki 3 |
| 11 | Development of moisture analysis for monosilane gas | Taiyo Nippon Sanso Corp. *Hiroyuki Ono 1 |
| | | Lunch 12:00～13:00 | |
| 20p-C - 1～7 |
| 1 | Observation of Implanted As in Si by Low Temperature Kelvin Probe Force Microscope | RIE Shizuoka Univ 1, NTT Basic Research Lab 2 Yuya Kawai 1, Miftahul Anwar 1, Sakito Miki 1, Yukinori Ono 2, Moraru Daniel Ioan 1,
Takeshi Mizuno 1, Michiharu Tabe 1 |
| 2 | Quantitative Analysis of Transition Metals Penetrating Silicon Substrate by Dopant Ion Implantation (2) | Sony Semiconductor Kyushu Corp. 1, Sony Corp. 2 *Ueno Keiji 1, Saga Koichiro 1, Ohno Rikiichi 2 |
| 3 | Study on Hot Nitrogenated Ultrapure Water with Megasonic Irradiation for Damage-free Si Wafer Cleaning Process | Kurita Water Industries LTD. 1,Renesas Technology Corp. 2 *Ida Junichi 1,Morita Hiroshi,Kanno Itaru 2,Hirota Yusaku 2 |
| 4 | Damage-free megasonic cleaning using dissolved gas in DI water | Renesas Technology Corp. 1, Kurita water industries LTD. 2 *Itaru Kanno 1, Yusaku Hirota 1, Hiroshi Morita 2, Junichi Ida 2 |
| 5 | Cavitation Control using Waveguide-type Ultrasonic Cleaning Equipment | KAIJO CO., LTD. 1, Facult. Eng., Shibaura Inst. of Tech. 2 *Suzuki Kazunari 1,2, Imazeki Yasuhiro 1, Han Ki 1, Okano Shoichi 1, Soejima Junichiro 1, Koike Yoshikazu 2 |
| 6 | IPA adsorption on wafer surfaces in IPA drying system | Sony Semiconductor Kyushu Corporation 1,Tokyo Electron Kyushu Limited 2
*Yoshiya Hagimoto 1,Tomoki Tetsuka 1,Hayato Iwamoto 1,Hironobu Hyakutake 2,Hiroshi Tanaka 2 |
| 7 | Dispersion stability of standard nanoparticles for filter performance evaluation | Nihon Pall Ltd. 1, Tanaka Kikinzoku Kogyo K.K. 2 *Mizuno Takehito 1, Hashimoto Masatoshi 1, Umeda Toru 1, Tsuzuki Shuichi 1, Sakamoto Atsushi 1, Numaguchi Toru 1, Taniuchi Junichi 2, Nakamura Noriaki 2 |
| 13.3 Gate Insulator Technology |
| March 18 |
| 18p-P9 - 1～20 |
| |
18p-P9 - 1～20 Poster Session 15:30～17:30 |
| 1 | Photoemission Study of Chemical Bonding Features on Ge MIS and Schottky Junction Interfaces | Hiroshima Univ. T.Fujioka,T.Bando,A.Ohta,H.Murakami,S.Higashi and S.Miyazaki |
| ▲ | 2 | Temporal Change in the Native Oxide Thickness on Ge(100) Surface | Hiroshima Univ. 1, *Siti Kudnie Sahari 1, Murakami Hideki 1, Fujioka Tomohiro 1, Bando Tatsuya 1, Ohta Akio 1, Makihara Katsunori 1, Higashi Seiichiro 1, Miyazaki Seiichi 1 |
| 3 | Effects of Annealing Temperatures on Ge MIS Interface properties near the Conduction Band Edge | MIRAI-NIRC 1, The Univ. of Tokyo 2 *Taoka Noriyuki 1, Mizubayashi Wataru 1, Morita Yukinori 1, Migita Shinji 1, Ota Hiroyuki 1, Takagi Shinichi 1,2 |
| 4 | Origin of stress relaxation at GeO2/Ge interface | Waseda Univ. 1, Waseda INN 2 Tomoya Onda 1, Hideaki Yamamoto 1, Takanobu Watanabe 1 2 |
| △ | 5 | Impact of Ge3N4 interface layer on EOT scaling in high-k/Ge gate stacks | Osaka Univ. 1, JAEA 2 *Kutsuki Katsuhiro 1, Okamoto Gaku 1, Hideshima Iori 1, Uenishi Yusuke 1, Kirino Takashi 1, Harries James 2, Yoshigoe Akitaka 2, Teraoka Yuden 2, Hosoi Takuji 1, Shimura Takayoshi 1, Watanabe Heiji 1 |
| △ | 6 | Thermal stability of GeON layer formed by plasma nitridation of ultrathin GeO2 | Osaka Univ. 1 * Hideshima Iori 1, Okamoto Gaku 1, Kutsuki Katsuhiro 1, Hosoi Takuji 1, Shimura Takayoshi 1,Watanabe Heiji 1 |
| 7 | Improvement of the property of FET having the HfO2/Ge structure fabricated by photo-assisted MOCVD with fluorine | Graduate School of Eng.Sci. 1,Inst. for NanoScience Design 2,Osaka Univ *Lee DongHun 1,Imajo Hideto 1,Yoshioka Yuichi 1,Kanashima Takeshi 1,Okuyama Masanori 2 |
| 8 | First-Principles Study to Explore Effective Passivants at Ge/GeO2 Interfaces | Grad. Schl. of Eng., Osaka Univ. Shoichiro Saito, Takuji Hosoi, Heiji Watanabe, and Tomoya Ono |
| 9 | Formation of ultra-thin SiO2//GeO2 interlayer on Ge | I-Eggs, Kyushu Univ. 1, KASTEC, Kyushu Univ. 2 Hirayama Kana 1, Yoshino Keisuke 1, Iwamura Yoshiaki 1, Ueno Ryuji 1, Yang Hai-gui 2, Wang Dong 2, Nakashima Hiroshi 2 |
| 10 | Study of HfO2/Si/strained-Ge/SiGe using Angle Resolved x-ray Photoelectron Spectroscopy | Tokyo City Univ. 1,Univ. of Warwick 2 *Komatsu Arata 1,Nasu Kentarou 1,Hoshi Yusuke 1,Kurebayashi Toru 1,Sawano Kentarou 1,Maksym Myronov 2,Nohira Hiroshi 1,Shiraki Yasuhiro 1 |
| 11 | Role of GeO2-Metal Interactions on Flatband Voltages of GeO2/SiO2/Si MIS Stacks | The Univ. of Tokyo 1, JST-CREST 2 Kita Koji 1,2,Nishimura Tomonori 1,2,Lee Choong Hyun 1,Fuad I. Alzakia 1,Nagashio Kosuke 1,2,Toriumi Akira 1,2 |
| △ | 12 | Active oxidation of germanium surface in low pressure oxygen ambient | The Univ. of Tokyo 1, JST-CREST 2 *Wang Shengkai 1, Kita Koji 1,2, Nishimura Tomonori 1,2, Nagashio Kosuke 1,2, Toriumi Akira 1,2 |
| 13 | Effects of High-pressure O2 thermal treatment on Ge/GeO2
| The Univ. of Tokyo 1, JST-CREST 2 *Mahoro Yoshida 1, Koji Kita 1,2, Choong Hyun Lee 1, Tomonori Nishimura 1,2, Kousuke Nagashio 1,2, Akira Toriumi 1,2
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| 14 | How to Determine Electric Field in Insulators for IPE Measurement | The Univ of Tokyo 1 Yasuyoshi Takamoto 1,Tomonori Nishimura 1,Kousuke Nagashio 1,Kouji Kita 1,Akira Toriumi 1 |
| △ | 15 | Intrinsic difference between HPO and APO in Ge | The Univ. of Tokyo 1, JST-CREST 2 *Lee Choong Hyun 1, Nishimura Tomonori 1,2, Nagashio Kosuke 1,2, Kita Koji 1,2, Toriumi Akira 1,2 |
| 16 | Ohmic contact at Metal/n-Ge interface by inserting ultra-thin TiO2 | The Univ. of Tokyo 1, JST-CREST 2 *Nishimura Tomonori 1,2, Nagashio Kosuke 1,2, Kita Koji 1,2, Toriumi Akira 1,2 |
| △ | 17 | Effect of Nitrogen Distribution on Electrical Properties of PrON/Ge Structures | Graduate School of Eng., Nagoya Univ. *Kato Kimihiko 1, Kondo Hiroki 1, Sakashita Mitsuo 1, Zaima Shigeaki 1 |
| 18 | Study on mechanism of electrical property improvement using post metalization anneal | Tokyo Univ. of Agri. & Tech ○Koumo Hideo, Suzuki Yuya, Kishiwada Jun, Oniki Yusuke, Iwazaki Yoshitaka, Ueno Tomo |
| 19 | A study on Electrical Characteristics of Al2O3/GeO2/Ge MOS Capacitors | Tokyo Univ.of Agri.& Tech. 1 *Suzuki Yuya 1, Koumo Hideo 1, Kishiwada Jun 1, Oniki Yusuke 1, Yositaka Iwazaki 1, Ueno Tomo 1 |
| 20 | Analysis of oxidation process in thin Al film on Ge substrate | Tokyo Univ. of Science, Suwa 1, Univ. of Yamanashi 2, Hirosaki Univ. 3 *Yukio Fukuda 1, Yohei Otani 1, Hiroki Ishizaki 1, Yuichi Imamura 2, Tetsuya Sato 2, Hiroshi Sato 3, Toshiro Ono 3 |
| 13.3 Gate Insulator Technology |
| March 19 |
| 19a-P11 - 1～27 |
| |
19a-P11 - 1～27 Poster Session 9:30～11:30 |
| 1 | Analysis of Local Leakage Current in Pr-oxide Film by Conductive Atomic Force Microscopy | Graduate School of Eng. Nagoya Univ. Masaki Adachi 1,Yuzo Kato 1,Mitsuo Sakashita 1,Hiroki Kondo 1,Shigeaki Zaima 1 |
| 2 | In-situ TEM observation and EELS analysis of TaOx-cap/HfO2/SiO2 stack structure | Hitachi High-Tech Corp. 1, NIMS. 2, Meiji Univ. 3 *Sato Takeshi 1, Matsumoto Hiroaki 1, Nabatame Toshihide 2, Chikyow Toyohiro 2, Iwashita Yuta 3 |
| △ | 3 | Modification of each interface in TaOx-cap/HfO2/SiO2 stack structure | Meiji Univ. 1, National Inst. for Materials and Science (NIMS) 2, Hitachi High-Tech. Corp 3 *Iwashita Yuta 1, Keemink Sander 2, Nabatame Toshihide 2, Sato Takeshi 3, Matsumoto Hiroaki 3, Ogura Atsushi 1, Chikyow Toyohiro 2 |
| ▲ | 4 | EBIC and TEM observation of physical damages induced by dielectric breakdown in high-k gate stacks | NIMS 1, Univ. of Tsukuba 2, Selete 3, Waseda Univ. 4 *Chen Jun 1, Sekiguchi Takashi 1, Takase Masami 1, Fukata Naoki 1, Nemoto Yoshihiro 1, Hasunuma Ryu 2, Yamabe Kikuo 2, Sato Motoyuki 3, Yamada Keisaku 4, Chikyo Toyohiro 1
|
| 5 | Photoemission Study of MgO/HfO2/SiO2 Stack Structure | Graduate School of Advanced Sciences of Matter, Hiroshima Univ., 1 Kanme Daisuke 1, Ohta Akio 1, Murakami Hideki 1, Higashi Seiichiro 1, Miyazaki Seiichi 1, |
| △ | 6 | Quantitative Evaluation of Band Edge Energy Levels Inherent in High-k Materials by XPS | The Univ. of Tokyo 1 *Chikata Yugo 1, Kita Koji 1, Nishimura Tomonori 1, Nagashio Kosuke 1, Toriumi Akira 1 |
| ▲ | 7 | Interfacial dipoles at high-k/SiO2 interface observed by X-ray Photoelectron Spectroscopy | Department of Materials Engineering, The University of Tokyo 1, *L.Q.Zhu 1, K.Kita 1, T.Nishimura 1, K.Nagashio 1, A.Toriumi 1 |
| 8 | Band alignment evaluation for gate-stack structures by HX-PES measurement under bias | Corporate R&D Center, Toshiba Corp. 1 *Takaishi Riichiro 1, Suzuki Masamichi 1, Yoshiki Masahiko 1, Takeno Shiro 1 |
| 9 | Fluorescence XAFS analysis of thermal stability for TiN/HfSiON/SiON/Si | JASRI/SPring-8 1, The University of Tokyo 2, UT-SRRO 3, JST-CREST 4, STARC 5 Hironori Ofuchi 1, Hiroyuki Kamada 2, Satoshi Toyoda 2-4, Hiroshi Kumigashira 2-4, Takae Sukegawa 5, Kinihiko Iwamoto 5, Ziyuan Liu 5, Masaharu Oshima 2-4 |
| 10 | Observation of high-k/SiON interface dipoles and their origin studied by synchrotron-radiation photoemission spectroscopy (1) | Tha University of Tokyo 1, JST-CREST 2, Univ-of-Tokyo SRRO 3, PREST 4, STARC 5 *Satoshi Toyoda 1-3, Akira Kikuchi 1, Hiroyuki Kamada 1, Hiroshi Kumigashira 1,3,4, Masaharu Oshima 1-3, Kunihiko Iwamoto 5, Takae Sukegawa 5, Zyuan Liu 5 |
| △ | 11 | Observation of high-k/SiON interface dipoles and their origin studied by synchrotron-radiation photoemission spectroscopy (2) | The Univ. of tokyo 1,2, JST-CREST 3, Univ-of-Tokyo SRRO 4, PREST 5, STARC 6 Kikchi Akira 1, Toyoda Satoshi 2,3,4, Kamada Hiroyuki 2, Kumigashira Hiroshi 2,4,5, Oshima Masaharu 2,3,4, Iwamoto Kunihiko 6, Sukegawa Takae 6, Liu Zuyuan 6 |
| 12 | Study on TaSi2/La2O3/CeOx Gate Stack toward EOT=0.5 nm | Tokyo Tech. FRC 1,IGSSE 2 *Kitayama Daisuke 1,Koyanagi Tomotsune 1,Kakushima Kuniyuki 2,Parhat Ahmet 1,Tsutsui Kazuo 2,Nishiyama Akira 2,Sugii Nobuyuki 2,Natori Kenji 2,Hattori Takeo 1,Iwai Hiroshi 1
|
| 13 | Characterization of Hf-based dielectric nMOSFETs with Ultrathin La2O3 layer inserted at the interface | Tokyo tech Univ. FRC 1,Tokyo tech Univ IGSSE 2 *Dariush Zade 1,T Sato 1, K. Kakushima 2,P. Ahmet1 ,K. Tsutsui 2,A. Nishiyama 2 ,N. Sugii 2,K. Natori 2,T. Hattori 1,H. Iwai 1 |
| 14 | Electrical Performance Improvement of La2O3 MOSFET with CeOx Capping | Tokyo Tech. FRC 1, Tokyo Tech. IGSSE 2 *K.Ozawa 1,M. Kouda 1,K. Kakushima 2,P. Ahmet 1,K.Tsutsui 2,A. Nishiyama 2,
N. Sugii 2,K.natori 1,T. Hattori 1, H. Iwai 1 |
| 15 | Improvement of electrical properties of MOSFET by rare-earths oxide capping | Tokyo Tech. FRC 1, IGSSE 2 *Miyuki Kouda1, Kuniyuki Kakushima2, Parhat Ahmet1, Kazuo Tsutsui2, Akira Nishiyama2, Nobuyuki Sugii2, Kenji Natori1, Takeo Hattori1, Hiroshi Iwai1, |
| 16 | Electrical Characterization of La2O3 MOS Devices with Alkali Earth Elements Capping | Tokyo Tech. FRC 1, IGSSE 2 *Tomotsune Koyanagi 1, Kuniyuki Kakushima 2, Parhat Ahmet 1, Kazuo Tsutsui 2, Akira Nishiyama 2, Nobuyuki Sugii 2, Kenji Natori 1, Takeo Hattori 1, Hiroshi Iwai 1
|
| 17 | Sub-1 nm EOT La-Al-O higher-k gate dielectrics with low leakage current using band gap engineering
| Osaka Univ. 1, IBM T. J. Watson Research Center 2, IBM Almaden Research Center 3, Arimura Hiroaki 1, Ando Takashi 2,1, Brown L. Stephen 2, Kellock Andrew 3, Callegari Alessandro 2, Copel Matthew 2, Haight Richard 2, Watanabe Heiji 1, and Narayanan Vijay 2 |
| 18 | Direct contact ALD-HfO2/Si Gate stacks on O-terminated Si surface | MIRAI-NIRC AIST *Yukinori Morita, Shinji Migita, Noriyuki Taoka, Wataru Mizubayashi, Hiroyuki Ota |
| 19 | Relaxation Characteristics of Threshold Voltage Degradation | Inst. of Appl. Phys, Univ. of Tsukuba 1, Nanotechnology Lab.,Waseda Univ. 2, Selete 3, TIMS 4 *C. Tamura 1, Y. Kikuchi 1, K. Ohmori 2, M. Sato 3, R. Hasunuma 1,4, K. Yamabe 1,4 |
| 20 | Irreversible Degradation in HfSiON during Electrical Stress Application | Inst. of Appl. Phys, Univ. of Tsukuba 1,Nanotechnology Research Center, Waseda Univ. 2,Selete 3, TIMS, Univ. of Tsukuba 4 Yuuki Kikuchi 1,Chihiro Tamura 1,Tsuyoshi Nomura 1,Kenji Ohmori 2,Motoyuki Sato 3,Ryu Hasunuma 1,4,Kikuo Yamabe 1,4 |
| 21 | Quantitative Correlation between Low-Field Mobility and High-Field Carrier Velocity in Quasi-Ballistic-Transport MISFETs with high-k Gate Dielectrics | Toshiba Corporation Kosuke Tatsumura 1, Masakazu Goto 2, Shigeru Kawanaka 2, Atsuhiro Kinoshita 1 |
| △ | 22 | Evaluation of HfN/HfSiON/Si(100) Gate Stack Structures Formed by ECR Sputtering | Tokyo Tech. 1 *Sano Takahiro 1, Ohmi Shun-ichiro 1 |
| ▲ | 23 | Electrical Properties of Hf/HfSiON/p-Si(100) Structure MIS Capacitor by Using ECR-Sputtering | Tokyo Tech. Han Hee-sung 1, Sano Takahiro 1, Song Younguk 1, Ohmi shun-ichiro 1 |
| △ | 24 | Formation of Praseodymium Aluminate by Atomic Layer Deposition and its Electrical Properties | Graduate School of Engineering,Nagoya Univ. 1 *Furuta Kazuya 1,Kondo Hiroki 1,Takeuchi Wakana 1,Sakashita Mitsuo 1,Zaima Shigeaki 1 |
| 25 | HfTiSiON film fabrication by N2 plasma induced interfacial reaction of metal nano particle and native SiO2 film: effect of nano particle uniformity
| National Defense Academy 1 *Kitajima Takeshi 1, Kage Ryousuke 1, Nakano Toshiki 1 |
| 26 | Fabrication of ZrO2 film on Si and suppression of diffusion at the interface | Tokyo Univ. of Agri. & Tech. 1 *Ikeda Ryo 1, Kishiwada Jun 1, Iwazaki Yoshitaka 1, Ueno Tomo 1 |
| 27 | Study of characterization of high-k Films by IL SiO2 | Tokyo Univ.ofAgri.&Tech. 1 *Iwazaki Yoshitaka 1,Wakamatu Kouichi 1,Nagatuka Yasuaki 1,Ueno Tomoo 1 |
| 13.3 Gate Insulator Technology |
| March 19 |
| 19p-P13 - 1～23 |
| |
19p-P13 - 1～23 Poster Session 13:00～15:00 |
| 1 | Development of Simulator for Insulation Reliability of Gate Oxide Layer | Grad. School Eng., Tohoku Univ. 1, NICHe, Tohoku Univ.2 ○Hideyuki Tsuboi 1, Ryuji Miura 1, Ai Suzuki 2, Akira Endou 1, Hiromitsu Takaba 1, Momoji Kubo 1, Akira Miyamoto 2 |
| 2 | Improvement of Electrical Reliability of High Quality CVD-SiO2 Film by UV Light Excited Ozone Gas Annealing | Meidensha Corp.1, Advanced Industrial Science and Technology (AIST)2 *Kameda Naoto 1,2, Saitoh Shigeru 1, Nishiguchi Tetsuya, 1,2, Morikawa Yoshiki 1, Kekura Mitsuru 1, Nonaka Hidehiko 2, Ichimura Shingo 2 |
| 3 | Mechanisms of current conduction in UV-illuminated Si3N4 films (?) | Tokai Univ. 1, Renesas Technology Corp. 2 *Ishikawa Koukichi 1, Asazuma Hirofumi 1, Watanabe Hiroaki 1, Murata Tatsunori 2, Asai Kouyu 2, Tsuchimoto Junichi 2, Kobayashi Kiyoteru 1
|
| 4 | Mechanisms of current conduction in UV-illuminated
Si3N4 films (?) | Tokai Univ. 1, Renesas Technology Corp. 2 *Asazuma Hirofumi 1, Ishikawa Koukichi 1, Watanabe Hiroaki 1, Murata Tatsunori 2, Asai Kouyu 2, Kobayashi Kiyoteru 1 |
| 5 | Mechanisms of current conduction in UV-illuminated Si3N4 films (?) | Tokai Univ. *Watanabe Hiroaki, Asazuma Hirofumi, Ishikawa Koukichi, Kobayashi Kiyoteru |
| 6 | Dependence of penetration barrier of H2O molecule into insulator films on deficits | Mitsubishi Electric Corp. 1 *Tomoki Oku 1,Hirotaka Amasuga 1,Masahiro Totsuka 1, Naohito Yoshida 1 |
| 7 | Experiment of oxygen vacancies in silicon dioxide | PHENITEC SEMICONDUCTOR 1,Okayama Univ. 2 *Masashi Minami 1 2,Yoichi Kamiura 2 |
| 8 | Characterization of Deep Levels in SiOxNy Thin Films | Hitachi Perl. 1, Renesas Tech. 2 Yonamoto Yoshiki 1, Akamatsu Naotoshi 1, Inaba Yutaka 2 |
| 9 | Comparison of SiO2 insulation characteristic evaluation by Pulse-Photoconductivity Method and TDDB testing | Graduate School of Science and Technology Kumamoto Univ 1,Kumamoto Univ 2 *Toshimasa Hirano 1,Yuya Nishi 1, Yasushi Matsumura 2, Masao Yoshioka 2, Hiroshi Kubota 1 |
| 10 | Characterization of Plasma Irradiated SiO2/Si Interface Properties by Photo Induced Carrier Microwave Absorption Method | Tokyo Univ. of Agri. and Tech. *Hasumi Masahiko, Takenezawa Jun, Nagao Tomokazu and Sameshima Toshiyuki |
| 11 | Evaluation of stress in the SOG film with plasma treatment | Meiji Univ. 1, JASRI 2, Tokyo Electron AT 3 *Nagata Kohki 1, Kosemura Daisuke 1, Takei Munehisa 1, Akamatsu Hiroaki 1, Hattori Maki 1, Mizukami Yuuki 1, Atsushi Ogura 1, Koganezawa Tomoyuki 2, Machida Masatake 2, Son jin-young 2, Hirosawa Ichirou 2, Nishita Tatsuo 3, Shiozawa Toshihiko 3, Katayama daisuke 3, Sato Yoshihiro 3, Hirota Yoshihiro 3 |
| 12 | Plasma Damage for SiO2 Films by Kr/O2 Plasma Oxidation | Tokyo Univ.of Agri.&Tech 1, *Hayashi Misato 1,Oniki Yusuke 1,Yositaka Iwazaki 1,Ueno Tomoo 1 |
| △ | 13 | Evaluation of strain extremely close to the atomically smooth SiO2/Si interface | Meiji Univ. 1, JSAP 2, New Industry Creation Hatchery Center 3, JASRI 4 Hattori Maki 1, Kosemura Daisuke 1,2, Takei Munehisa 1, Nagata Kohki 1, Akamatsu Hiroaki 1, Ogura Atsushi 1, Suwa Tomoyuki 3, Teramoto Akinobu 3, Hattori Takeo 3, Ohmi Tadahiro 3, Koganezawa Tomoyuki 4, Hirosawa Ichiro 4 |
| 14 | A study of the orientation dependence of dielectric constant at SiO2/Si interfaces | Tokyo City Univ. 1, ISAS/JAXA 2 *Igarashi Satoru 1,2, Kobayashi Daisuke 2, Nohira Hiroshi 1, Hirose Kazuyuki 2 |
| 15 | Fabrication of Gate Oxide Layer in TFT by Use of Nitric Acid Oxidation Method and Achievement of Ultra-low Power | ISIR Osaka Univ. 1, CREST-JST 2, Eng. Osaka Univ. 3, Sharp Corp. 4 Matsumoto Taketoshi 12, Yamada Mikihiro 12, Tsuji Hiroshi 12, Mazumder Motaharu 12, Terakawa Sumio 12, Imai Shigeki 24, Kobayashi Hikaru 12 |
| △ | 16 | The Mechanism of Improved Electrical Characteristics of FinFET by Damage-free Neutral Beam Oxidation (NBO) Process | Tohoku Univ. 1, AIST 2 *Akira Wada 1, Keisuke Sano 1, Kazuhiko Endo 2, Takashi Matsukawa 2, Meishoku Masahara 2, Seiji Samukawa 1 |
| △ | 17 | Property of Silicon Dioxide by Neutral Beam Oxidation Process for Three Dimensional Structure | Tohoku Univ. 1, AIST 2 *Keisuke Sano 1, Akira Wada 1, Kazuhiko Endo 2, Takashi Matsukawa 2, Meishoku Masahara 2, Seiji Samukawa 1 |
| 18 | Universal Mobility Modeling and its Application to Interface Engineering for Highly Scaled MOSFETs Based on First-principles Calculation | Advanced LSI Technology Lab., R&D Center, Toshiba Corp. Ishihara Takamitsu 1,Matsushita Daisuke 1,Kato Koichi 1 |
| △ | 19 | Improvement of low-temperature silicon dioxide thin film using Tetra-iso-propoxysilane | Tokyo Inst. Tech. 1
*Cheolhyun Lim 1, Junichi Hanna 1 |
| 20 | Enhancement of RIE plasma resistance of porous silica low-k films | Tsukuba ISM ULVAC 1 *Issei Tojo 1, Masaaki Hirakawa 1, Tsuyosi Kagami 1, Takahisa Yamazaki 1, Takahiro Nakayama 1, Hirohiko Murakami 1 |
| 21 | Reduction in the defect density of the SiNX gate insulator films of a-Si TFTs by annealing | Jpn.Adv.Inst.Sci&Tech.(JAIST) *Hasegawa Tomoaki 1,Nishizaki Shougo 1,Oodaira Keisuke 1,Matsumura Hideki 1 |
| △ | 22 | Low Temperature Formation of ?3nm SiO2/Si Structure by Nitric Acid Vapor Oxidation. | ISIR, Osaka Univ. 1, CREST-JST 2 *Shusuke Tanaka 1 2, Taketoshi Matsumoto 1 2, Hitoo Iwasa 1 2, Hikaru Kobayashi 1 2
|
| 23 | Low Temperature Formation of Silicon oxide thin film by Hot Plate Method | Miyazaki Univ.1 *Takuya Ito 1,Kenichi Ikematsu 1,Tsuyoshi Sueto 1,Kensuke Nishioka 1 |
| 13.3 Gate Insulator Technology |
| March 20 |
| 20a-P16 - 1～20 |
| |
20a-P16 - 1～20 Poster Session 9:30～11:30 |
| △ | 1 | Behavior of the electronic and atomic structure during Program/Erase cycle of MONOS-type memory | Univ. of Tsukuba 1 *Keita Yamaguchi 1, Akira Otake 1, Kenji Kobayashi 1, Kenji Shiraishi 1 |
| 2 | Theoretical studies on the charge trapping system of Hydrogen mixed MONOS-type Memories | Univ. of Tsukuba 1 *Akira Otake 1, Keita Yamaguchi 1, Kenji Kobayashi 1, Kenji Shiraishi 1 |
| △ | 3 | Programming Current Enhancement Induced by Ge Incorporation into Tunnel Oxide | Corp. R&D Center, Toshiba Corp. 1,Corp. Manuf. Eng. Center, Toshiba Corp. 2,Device Process Dev. Center, Toshiba Corp. 3 Ito Toshihide 1,Mitani Yuichiro 1,Nakasaki Yasushi 1,Koike Masahiro 1,Konno Takuya 2,Matsuba Hiroshi 2,Kaneko Wakana 3,Kai Tetsuya 3,Ozawa Yoshio 3
|
| 4 | Atomistic Model for Leakage Current Control by Ge Incorporation into Tunnel Insulator Films - Impact of oxidation state of Ge - | Toshiba Corp. R&D Center 1 Nakasaki Yasushi 1, Ito Toshihide 1, Koike Masahiro 1, Kato Koichi 1, Mitani Yuichiro 1 |
| 5 | Dependence of MONOS charge centroid on injection methods | Toshiba Corp. *Haimoto Takashi 1, Kurita Takahiro 1, Fujiki Jun 1, Yasuda Naoki 1 |
| △ | 6 | CVD Growth Characteristics of TiO2 Film with a New Ti Precursor Ti-DOT | Tosoh Corporation 1,Sagami Chemical Research Center 2,Tokyo Inst. of Technology 3 *Maniwa Atsushi 1,Chiba Hirokazu 1,Iwanaga Kohei 1,2,Yamamoto Toshiki 1,2,Yotsuya Tadahiro 1,2,Oshima Noriaki 1,2,Tada Kenichi 2,Funakubo Hiroshi 3 |
| 7 | Memory property of Al/Al2O3/Al-rich Al-O/SiO2/Si structure（?） | Grad. School of Natural Sci. & Tech. Kanazawa Univ.1，NTT Microsystem Integration lab.2，Prof.Emeritus, Kanazawa Univ.3 *Ryoji Maeda 1，Shunji Nakata 2，Tatsuo Shimizu 3，Takeshi Kawae 1 and Akiharu Morimoto 1 |
| △ | 8 | Low-dielectric constant SiCN films as the charge trapping layers for nonvolatile memory devices
| Tokai Univ. *Satoshi Tachizaki, Hiroaki Watanabe, Makoto Gotanda, Kiyoteru Kobayashi |
| 9 | Changes in Interface Characteristics of HfO2/La2O3/In0.53Ga0.47As | Tokyo Tech. FRC 1, IGSSE 2, National Chiao Tung Univ. 3 *Kanda Takashi 1, Funamizu Kiyohisa 1, Yueh Chin Lin 3, Kakushima Kuniyuki 2, Parhat Ahmet 1, Tsutsui Kazuo 2, Nishiyama Akira 2, Sugii Nobuyuki 2, Edward Yi Chang 3, Natori Kenji 1, Hattori Takeo 1, Iwai Hiroshi 1 |
| ▲ | 10 | Oxide layer quality improvement by ALD-Mode by using Al2O3-CVD with new chemistry | The Univ. of Tokyo 1 *Wang Xiaoliang 1,Shimogaki Yukihiro 1 |
| △ | 11 | Improvement of Interface Properties of ALD-Al2O3/InGaAs MOS Capacitors with Interface Nitridation using ECR Plasma | Univ. of Tokyo 1, Sumitomo Chemical 2, AIST 3 *Takauya Hoshii 1, Masafumi Yokoyama 1, Hisashi Yamada 2, Masahiko Hata 2, Tetsuji Yasuda 3, Mitsuru Takenaka 1, Shinichi Takagi 1 |
| 12 | High-Quality MIS Interface and High Electron Mobility on InGaAs(111)A | AIST 1, Sumitomo Chemical 2, The Univ. of Tokyo 3 Ishii Hiroyuki 1, Urabe Yuji 1, Itatani Taro 1, Miyata Noriyuki 1, Yasuda Tetsuji 1, Yamada Hisashi 2, Fukuhara Noboru 2, Hata masahiko 2, Yokoyama Masashi 3, Takenaka mitsuru 3, Takagi shin-ichi 3 |
| 13 | Atomic layer epitaxy of γ-Al2O3 on GaAs(001) | Miyazaki Univ.1 *Haraguchi Tomohiro 1,Uwai Kouhei 1,Hirakawa Keisuke 1,Maeda Kouji 1,Ozeki Masashi 1 |
| 14 | First-principles analysis of oxygen vacancy in monoclinic HfO2 using Hybrid-DFT+U and GW methods
| Fujitsu Laboratories Ltd. *Minoru Ikeda 1,Takahiro Yamasaki 1, Chioko Kaneta 1 |
| 15 | Theoretical Investigation of Photo-Induced Multi-Valence Phenomena of La atoms | Univ.of Tsukuba 1, NIMS 2 T.Yoshizaki 1 ,K.Shiraishi 1,N.Umezawa 2 |
| 16 | H Diffusion Mechanism in High-K/SiO2/Si Interface Structures | Advanced LSI Tech. Lab., Toshiba R&D Center *Kato Koichi 1, Hirano Izumi 1, Nakasaki Yasushi 1, Mitani Yuichiro 1 |
| 17 | Theoretical study of dielectric property analysis with local dielectric constant | Kyoto Univ. 1 Fukushima Akinori 1, Tsuchiida Yasushi 1,Senami Masato 1,Tachibana Akitomo 1 |
| 18 | Re-examination of extraction method of Metal work function for MOS structure | Hitachi Kokusai Electric Inc. 1,CRL. Hitachi Ltd. 2,AIST-NIRC3 *Arito Ogawa1,Hideharu Itatani1,Sadayoshi Horii1,Nobuyuki Mise2,Tsuyoshi Horikawa3 |
| 19 | Effect of oxygen incorporation on electrical characteristics in W gated MOS devices | Tokyo Tech. FRC 1,Tokyo Tech. IGSSE 2 *Kawanago Takamasa 1,Kakushima Kuniyuki 2,Parhat Ahmet 1,Tsutsui Kazuo 2,Nishiyama Akira 2,Sugii Nobuyuki 2,Natori Kenji 1,Hattori Takeo 1,Iwai Hiroshi 1 |
| 20 | Fabrication of PtSi Gate Electrodes by RF Magnetron Sputtering | Tokyo Tech. 1 Kimura Yuichiro 1, Gao Jun 1, Ishikawa Jumpei 1, Ohmi Shun-ichiro 1 |
| 13.4 Interconnect Technology |
| March 19 10:00～12:30 |
| 19a-D - 1～9 |
| 1 | Study of electroless Ni-arroy plating on SiO2 using Au nano-particle as a catalyst | Kansai Univ. 1 *Miyake Hiroshi 1,Inoue Fumihiro 1,Yokoyama Takumi 1,Shingubara Shoso 1 |
| 2 | A formation method of interconnection between IC chips using poly chloro para-xylylene film and electroless copper plating (?) | Chiba Inst.of Tech Graduate school of eng. 1,Chiba Inst.of Tech.Fac.of eng. 2 *Makoto Hatano 1,Osamu Sugiura 2 |
| 3 | A fabrication method of copper wiring on epoxy mixing resin with electroless copper plating | Chiba Inst.of tech Graduate school of eng. 1,Chiba Inst.of tech Fac.of eng. 2 *Akinari Sakurai 1,Osamu Sugiura 2 |
| 4 | An improvement in uniformity of electroless copper plating on aluminium | Chiba Inst. of Tech., Graduate school of eng. 1,Chiba Inst. of Tech.,Fac. of eng. 2 *Akira Yamauchi 1,Osamu Sugiura 2 |
| 5 | A formaition of copper wiring on polytetrafluoroethlene surface using electroless copper plating | Chiba Inst. of Tech Graduate school of eng.1,Chiba Inst. of Tech Fac of eng.2
*Kiko Azusa 1,Sugiura Osamu 2 |
| | | Break 11:15～11:30 | |
| △ | 6 | High-Density Cu/Sn Microbump Formation Technology for Three-Dimensional Integration Circuits (3D IC) | Tohoku Univ. *Y. Ohara 1, A. Noriki 1, M. Murugesan 1, E. Iwata 1, T. Hiraki 1, K.-W. Lee 1, J.-C. Bea 1, T. Fukushima 1, T. Tanaka 1,2, M. Koyanagi 1 |
| ▲ | 7 | Low resistance Cu-Sn microbump for flip-chip interconnection | Tohoku Univ. 1 *M. Murugesan 1, Y. Ohara 1, A. Noriki 1, T. Kojima 1, T. Hiraki 1, H. Kino 1, K.-W. Lee 1, J.-C. Bea 1, T. Fukushima 1, T. Tanaka 1, M. Koyanagi 1 |
| △ | 8 | Chip Self-Assembly through Microbump-to-Microbump Bonding for 3D Integration | Graduate School of Engineering, Tohoku Univ. 1, Graduate School of Biomedical Engineering, Tohoku Univ. 2 Chip Self-Assembly through Microbump-to-Microbump Bonding for 3D Integration |
| 9 | Oxidation resistance and deposition selectivity of electroless Sn plating on Cu thin films | Tohoku Univ. 1 *Li Zifeng 1, Fujii Yoshito 1, Sutou Yuji 1, Koike Junichi 1 |
| 13.4 Interconnect Technology |
| March 20 9:00～11:45 |
| 20a-D - 1～10 |
| 1 | The effect of iso-butyl groups in the precursor for SiCH films with Cu diffusion barrier on BEOL | Taiyo Nippon Sanso1, Univ. of Tokyo2, Tri Chemical Lab.3, Tsukuba Univ.4 *Shimizu Hideharu1 2, Nagano Shuji1, Ohashi Yoshi1, Sakoda Kaoru1, Hasaka Satoshi1, Kada Takeshi3, Tajima Nobuo4, Shimogaki Yukihiro2 |
| 2 | Formation of Super-Low-k SiOCH Film by Neutral Beam Enhaced CVD (3)= Formation of layer Film (2)= | Tohoku Univ. 1, STARC 2 *Toru Sasaki 1, Shigeo Yasuhara 1, Kunitoshi Tajima 2, Hisashi Yano 2, Shingo Kadomura 2, Tsutomu Shimayama 2, Noriaki Matsunaga 2, Masaki Yoshimaru 2, Seiji Samukawa 1 |
| △ | 3 | Formation of Super-Low-k SiOCH Film by Neutral Beam Enhaced CVD (4)=Effect of substrate temperature and Pulsed -Beam= | Tohoku Univ. 1, STARC 2 *Toru Sasaki 1, Shigeo Yasuhara 1, Kunitoshi Tajima 2, Hisashi Yano 2, Shingo Kadomura 2,Tsutomu. Shimayama 2, Noriaki Matsunaga 2, Masaki Yoshimaru 2, Seiji Samukawa 1 |
| 4 | Application of ZrBx films deposited at low temperature in Cu interconnects | Kitami Inst. of Technol. *Mayumi B. Takeyama, Masaru Sato, Atsushi Noya |
| 5 | Barrier metal re-sputtering process development for reducing low-k film damage II | NEC Electronics *Akira Nakajima 1,Tetsuya Kurokawa 1,Makoto Tohara 1,Kunihiro Fujii 1 |
| | | 10:45～11:00 | |
| 6 | Three-dimensional characterization of the barrier metals by Transmission Electron microtomography | Toray Research Center Inc.1,Selete2 *Toshihiko Ito1,Ukyo Matsuwaki1,Hideki Hashimoto1,Nobuaki Tarumi2, Shinichi Ogawa2 |
| 7 | Nucleation density of Cu-CVD process using novel precursor | The Univ. of Tokyo 1 Yuta Suzuki 1, *Yukihiro Shimogaki 1 |
| △ | 8 | Precise Taper-angle-control of Via-holes for Reliable Scaled-down Low-k/Cu Interconnects | LSI Fundamental Research Lab. *Ippei Kume 1, Jun Kawahara 1, Naoya Inoue 1, Shinobu Saito 1, Naoya Furutake1 , Yoshihiro Hayashi 1 |
| △ | 9 | RF Performance Upgrading of Low-power 40nm-node CMOS Devices by Extremely Low-resistance Partially-thickened Local (PTL)-interconnects | NEC Electronics LSI Fundamental Research Laboratory *Hijioka Ken'ichiro 1, Kawahara Jun 1, Narihiro Mitsuru 1, Kume Ippei 1, Tanabe Akira 1, Nagase Hirokazu 1, Yamamoto Hironori 1, Inoue Naoya 1, Hayashi Yoshihiro 1 |
| △ | 10 | Improvement of Magnetic Properties by Multi-layered NiZn-Ferrite/TaN Films | NEC Electronics Corporation 1, LSI Fundamental Research Laboratory 2 *Kishou Kaneko 1, Naoya Inoue 1, Naoya Furutake 1, Yoshihiro Hayashi 1 |
| 13.5 Si Process Technology |
| March 17 9:00～17:00 |
| 17a-D - 1～11 |
| △ | 1 | Study of strain introduction for SMT process by Raman spectroscopy | Meiji Univ. 1, Tokyo Institute of Technology 2 *Nagata Kohki 1,Kosemura Daisuke 1,Ogura Atsushi 1,Nakayama Hiroto 2,Sugii Nobuyuki 2, Iwai Hiroshi 2 |
| 2 | Experimental Study on New Source-Hetereojunction Structures
using Relaxed-/Strained-Semiconductor Layers (II) | Kanagawa Univ. 1, MIRAI-AIST 2, Tokyo Univ. Agri. Tech. 3 *T.Mizuno 1,2 , M.Hosegawa 1, T.Sameshima 3 |
| 3 | Origin of trap states near SOI/BOX interface in SOI wafers | Bio-Nano Electronics Research Centre, Toyo Univ. 1 *Watanabe Yukitoshi 1, Nakajima Yoshikata 1, Toyabe Toru 1, Hanajiri Tatsuro 1, Sugano Takuo 1, |
| 4 | Study on Mechanism of Dislocation Generation in Line and Space Pattern | Hitachi M.E.R.L. 1,Renesas Technology 2 Ishitsuka Norio 1、Kamohara Shiro 2, Kimura Yasuhiro 2,Yoshida Syouji 2、Takeuchi Takashi 2,Yamaguchi Natsuo 2 |
| 5 | Junction Control Using Lateral Epitaxial Growth of NiSi2 in SOI | MIRAI-NIRC, AIST 1 *Mizubayashi Wataru 1, Migita Shinji 1, Morita Yukinori 1, Taoka Noriyuki 1, Ota Hiroyuki 1 |
| 6 | A Study on Patterning of PtSi Alloyed with Yb by Wet Etching | Tokyo Tech. *Ishikawa Jumpei 1, Gao Jun 1, Ohmi Shun-ichiro 1 |
| | | Break 10:30～10:45 | |
| 7 | Fabrication of Ultra-thin PtSi Alloying with Hf Utilizing 2-Step Silicidation Process | Tokyo Tech. 1 *Gao Jun 1, Ishikawa Jumpei 1, Ohmi Shun-ichiro 1 |
| 8 | Scanning TEM of atomic structure of Ni diffused Si (001) surface layer-- Precursor to formation of NiSi2 at low temperature-- | Device Platforms Res. Labs. NEC Corp. *Ikarashi Nobuyuki 1 |
| 9 | Formation of Pt-germanide from Pt/a-Ge:H by Remote Hydrogen Plasma Treatment | Grad. School of Advanced Sciences of Matter, Hiroshima Univ. Miyazaki Yusuke 1, Makihara Katsunori 1, Ikeda Mitsuhisa 1, Higashi Seiichiro 1, Miyazaki Seiichi 1 |
| 10 | Proof of Arsenic Atom Segregation within 1nm depth from NiSi/Si Interface | MIRAI-NIRC AIST 1 *Migita Shinji 1, Mizubayashi Wataru 1, Morita Yukinori 1, Taoka Noriyuki 1, Ota Hiroyuki 1 |
| 11 | Fabrication of Si/SiC heterojunctions of their electrical properties | Kyoto Institute of Technology.1 *Fumito Nomura,Hideo Shimizu,Masahiro Yoshimoto |
| | | Lunch 12:00～13:00 | |
| 17p-D - 1～15 |
| 1 | Si Etching with ClF3 Cluster Injection | Iwatani Corp. 1,Kyoto Univ. 2 ＊Yoshino Yu 1,Seki Toshio 2,Senoo Takehiko 1,Koike Kunihiko 1,Ninomiya Satoshi 2,Aoki Takaaki 2,Matsuo jiro 2 |
| 2 | Ultra-shallow and highly doped n+Ge layer formation by co-doping of n- and p-type impurities | MIRAI-Toshiba 1, Corp. R&D Center, Toshiba 2 *Koike Masahiro 1, Tatsumura Kosuke 2 |
| 3 | Improvement of the Pattern Effect on Flash Lamp Annealing
by using an Optical-Absorption Carbon Film and Flexibly-Shaped-Pulse Technology | Semiconductor Leading Edge Technologies, Inc. *Shinichi Kato, Takashi Onizawa, Takayuki Aoyama, Kazuto Ikeda, Yuzuru Ohji |
| 4 | Dependence of crystalline structure and electrical properties of Ti-C-N on nitrogen concentration and annealing temperature | Graduate School of Engineering, Nagoya Univ. Kazuaki Miyamoto 1, ○Hiroki Kondo 1, Mitsuo Sakashita 1, Osamu Nakatsuka 1, Shigeaki Zaima 1 |
| △ | 5 | Thermal Annealing Effect of ALD-TiN Film Using TDMAT Precursor and Its Application for Gate Electrode (2) | Meiji Univ. 1, AIST 2, Hayashida Tetsuro 1, Endo Kazuhiko 2, Liu Yongxun 2, Kamei Takahiro 1, Matsukawa Takashi 2, O’uchi Shin-ichi 2, Sakamoto Kunihiro 2, Tsukada Jun-ichi 2, Ishikawa Yuki 2, Yamauchi Hiromi 2, Ogura Atsushi 1, and Masahara Meishoku 1 2 |
| 6 | Grazing incidence X-ray diffraction from erbium silicates on SiO2/Si substrates | NTT BRL 1, CAST 2, Hyougo univ. 3 *Hiroo Omi 1, Hiromichi Komatsu 2, Takeda Shingo 2, Tsusaka Yoshiyuki 3, Kagoshima Yasushi 3, Matsui Junji 2 |
| △ | 7 | Passivation of ion bombardment-induced deep-level defects by hydrogen radical | Nagoya Univ. 1,Aichi Inst. of Technol. 2,NU-Eco Eng. Co., Ltd 3 *Chen Shang 1,Nagae Yoichi 2,Ishikawa Kenji 1,Nakai Masafumi 2,Kano Hiroyuki 3,Takeda Keigo 1,Kondo Hiroki 1,Tokuda Yutaka 2,Sekine Makoto 1,Hori Masaru 1 |
| 8 | Relationship between defect and filling errors in deep-trench by epitaxial growth | Semiconductor Company, Toshiba Corporation *Shinya Sato, Hiroyuki Sugaya, Tomoyuki Sakuma, Kenichi Tokano, Akihiro Shimada, and Hironori Ishikawa |
| | | Break 15:00～15:15 | |
| 9 | Study on chemical bonding states of As and P in Si detected by X-ray photoelectron spectroscopy | Tokyo Tech. 1, Tokyo City Univ. 2, JASRI 3, Tokyo Tech. 4 *Masaoki Tanaka 1, Norifumi Hoshino 1, Kazuo Tsutsui 1, Hiroshi Nohira 2, Takayuki Muro 3, Yukako Kato 3, Toyohiko Kinoshita 3, Parhat Ahmet 4，Kuniyuki Kakushima 4, Takeo Hattori 4, Hiroshi Iwai 4 |
| △ | 10 | Investigation of the new physical model of Ohmic contact for future nano-scale contacts | Grad. School of Pure and Applied Sciences, Univ. of Tsukuba 1, Center for Interdisciplinary research, Tohoku Univ. 2 Takada Yukihiro 1, Muraguchi Masakazu 2, Endoh Tetsuo 2, Nomura Shintaro 1, Shiraishi Kenji 1 |
| 11 | A Visualization of Electrostatic Distribution Measurement by MEMS Micro-mirror Array | Industrial Technology Center of Wakayama Prefecture. 1, Kinki Univ. 2, Hanwa Electronic Ind. Co., Ltd. 3 Takaki Itoh1, Yoshifumi Ueno1, Hiroshi Maeda1, Toshihide Kuriyama2, Toshikazu Aoi2,
Toshiyuki Nakaie3, Nobutika Matsui3, Hiroyuki Okumara3
|
| 12 | Fabrication and Evaluation of Au-catalyzed Silicon Nanowires Formed by Arc Plasma Deposition | Nippon Institute of Tech 1,Tokyo Univ. of Agri. & Tech 2 *Yuuta Hishinuma 1, Yoshihiro Tomituka 2, Kazuya Maishigi 2, Hisashi Uchiyama 2, Minoru Aoyagi 1,Kouiti Kamisako 2 |
| 13 | Thin Cu film deposition by operation of nanosilicon ballistic emitter in solution | Graduate School of Eng., Tokyo Univ. of Agri. & Technol. 1 *Ohta Toshiyuki 1, Gelloz Bernard 1, Koshida Nobuyoshi 1 |
| 14 | Formation of Nano-structured Silicon by Extremely Dilute HF Solutions | Tokyo Denki Univ. 1 *Hikaru Ando 1, Masaru Fukuya 1, Yoshihisa Nakaji 1, Akitsugu Watanabe 1, Mitsuya Motohashi 1, Kazuaki Homma 1 |
| 15 | Preparation of Silicon Nanowall by Anodization and Exposure of Electron Beam II | Tokyo Denki Univ. 1 *Nakaji Yoshihisa 1, Anzai Masahiro 1, Nakada Hideki 1, Mitsuya Motohashi 1, Niwa Masaaki 1, Homma Kazuaki 1 |
| 13.5 Si Process Technology |
| March 18 9:00～18:30 |
| 18a-D - 1～11 |
| 1 | Recrystallization characteristics of CH4 ion implanted for strain generation | Kyushu Univ. *Toru Kunitake,Shinichiro Adachi,Tanemasa Asano |
| 2 | Effect of yttria-stabilized zirconia(YSZ) on solid phase crystallization of an amorphous Si film
| Jp.Adv.Inst.and Tech. Tatsuya Akahori 1, Susumu Horita 1 |
| 3 | The Influence of Precursor Structures on the Lateral Crystallization of a-Si Films by Flash Lamp Annealing | Jpn. Adv. Inst. Sci. & Tech. 1, JST PRESTO 2 Keisuke Ohdaira 1,2, Takuya Nishikawa 1, Shohei Ishii 1, Naohito Tomura 1, Hideki Matsumura 1 |
| 4 | Intensity of Raman Spectra of Excimer Laser Annealed Poly-Si Thin Films | Shimane Univ.1 Kenichi Yamamoto 1, Kuninori Kitahara 1 |
| 5 | Effect of hydrogen on growth of disk-shaped crystal grain | Univ. Hyogo 1, Yamaguchi Univ. 2 * Akira Heya 1, Kazufumi Yamada 1, Naoya Kawamoto 2, Naoto Matsuo 1 |
| 6 | Thermal analysis of Si film crystallized by Blue-Multi-Laser-Diode Annealing (BLDA) | Univ. of the Ryukyus 1, Hitachi CP 2 *Katsuya Shirai 1, Tatsuya Okada 1, Takashi Noguchi 1 , Yoshiaki Ogino 2, Eiji Sahota 2 |
| | | Break 10:30～10:45 | |
| 7 | Gettering in Large-Grained Thin Polycrystalline Silicon Films on Glass Substrate | Tohoku Gakuin Univ. *Akito Hara 1, Tsutomu Sato 1, Tadashi Sato 1 |
| △ | 8 | Orientation Control of Single-Crystalline Si Grains on Insulator and SiGe-Mixing-Induced Lateral Epitaxial Growth of Ge | Kyushu Univ. 1, JSPS Research Fellow 2 *Kurosawa Masashi 1,2, Kawabata Naoyuki 1, Toko Kaoru 1,2, Sadoh Taizoh 1, Miyao Masanobu 1 |
| 9 | Crystallization of a-Ge film by Soft X-ray Irradiation | Dept. Mat. Sci. & Chemi. ,University of Hyogo 1,LASTI University of Hyogo 2 *Isoda Nobuya 1,Inoue Tomoaki 2,Amano Sho 2,Heya Akira 1,Kanda Kazuhiro 2,Matsuo Naoto 1,Miyamoto Shuji 2,Mochizuki Takayasu 2
|
| △ | 10 | Study of Temperature and Stress of Organic /Inorganic Layered Structure | Hitachi CRL 1 *Kuranaga Takahide 1, Okada Naoya 1, Hattori Takashi 1, Hatano Mutsuko 1 |
| 11 | Growth of Polycrystalline Si Film on Polycarbonate Substrate | Yamaguchi Univ. 1, TEIJIN LTD. 2 *Naoya Kawamoto 1, Yuhei Ono 2, Tetsuya Hanta 1, Tetsuya Imamura 2, Tadaki Miyoshi 1
|
| | | Lunch 12:00～13:00 | |
| 18p-D - 1～20 |
| 1 | Cluster Ion Implantation to Si - Carrier Activation in Cluster Boron Implanted Si ? | Nissin Ion Equipment 1,Univ. Carlifornia Los Angels 2 *Hiroshi Onoda 1,Nariaki Hamamoto 1,Tsutomu Nagayama 1,Masayasu Tanjo 1,Sei Umisedo 1,Noriaki Maehara 1,Yasunori Kawamura 1,Yoshiki Nakashima 1,Masahiro Hashimoto 1,Hideki Yoshimi 1,Shinichi Sezaki 1,Kyoko Kawakami 1,Si Prussin 2 |
| 2 | Cluster Ion Implantation to Si -P Diffusion Suppression with Carbon Co-implant- | Nissin Ion Equipment *Hiroshi Onoda, Nariaki Hamamoto, Tsutomu Nagayama, Masayasu Tanjo, Sei Umisedo, Noriaki Maehara, Yasunori Kawamura, Yoshiki Nakashima, Masahiro Hashimoto,
Hideki Yoshimi, and Shinichi Sezaki
|
| 3 | Electrical Activation of heavily doped Si film by RTA | Univ. Ryukyus 1 Tomoyuki Miyahira 1, Toshiharu Suzuki 1, *Takashi Noguchi 1 |
| 4 | High Efficiency Activation of Impurity in Ultra Shallow Junction Induced by High Density Thermal Plasma Jet Irradiation | Graduate School of Advanced Sciences of Matter, Hiroshima Univ. *Matsumoto Kazuya 1, Higashi Seiichiro 1, Murakami Hideki 1, Miyazaki Seiichi 1 |
| 5 | Formation of Boron Shallow Junction in Si Using Low-Temperature Pre-Anneal and Non-Melt Laser Anneal | Keio Univ. 1, SEN Corporation 2 Shuhei Hara1, Yusuke Shigenaga 1,*Satoru Matsumoto 1, Toshiharu Suzuki 2, Genshu Fuse 2, Susumu Sakuragi 3 |
| 6 | Deep level transient spectroscopy study on recrystallization of ultra-shallow junction | Kyoto Inst 1,WaferMasters, Inc. 2 *Masashi Okutani 1,Shuhei Takashima 1,Masahiro Yoshimoto 1,Woo Sik Yoo 2 |
| | | Break 14:30～14:45 | |
| 7 | Analysis of rapid heating of semiconductor laser | TUAT 1,Hightec Systems 2,Nissin Ion Equipment 3 Kanda YasuShi 1,Ukawa Kan 1,Hasumi Masahiko 1,Sameshima Toshiyuki 1,Sano Naoki 2,Naito Masao 3,Hamamoto Nariaki 3 |
| 8 | Analysis of Photo-Induced Carrier Recombination Characteristics at Silicon Surface | Tokyo Univ. of Agri. & Tech. *Shimokawa Mitsujirou, Takenezawa Jun, Hasumi Masahiko, Sameshima Toshiyuki |
| 9 | Improvement of gate insulator reliability by atmospheric pressure thermal plasma jet induced millisecond annealing | Hiroshima Univ. 1, *Hiroshige Yasuo 1, Higashi Seiichiro 1, Hayashi Syohei 1, Nishida Yusuke 1, Miyazaki Seiichi 1, |
| 10 | Development of MILC-TFT performance using patterned a-Si film | Dept. of Electronics, Kyushu Univ. 1 *Nagata Sho 1, Kanoh Shintaro 1, Nakagawa Gou 1, Asano Tanemasa 1 |
| 11 | High mobility bottom gate TFT using directly deposited nanocrystalline Si | Sony Corp. Hara Masaki |
| △ | 12 | Investigation of poly-Si TFT prepared by Position-Controlled Continuous-Grain Silicon | SHARP Corp., Corporate Research and Development Group *Uchida Seiichi 1,Matsukizono Hiroshi 1,Kimura Tomohiro 1,Mori Shigeyasu 1,Matsuo Takuya 1 |
| | | Break 16:15～16:30 | |
| 13 | High Speed Lateral Crystallization of Silicon Film Using Atmospheric Pressure Micro-Thermal-Plasma-Jet and Characterization of Thin Film Transistors. | Hiroshima Univ. 1 *Shohei Hayashi 1, Seiichiro Higashi 1, Yasuo Hiroshige 1, Hideki Murakami 1, Seiichi Miyazaki 1 |
| 14 | Lateral Crystallized Poly-Si TFTs with Variable Vth Scheme on Quartz Substrates | Tohoku Univ. 1 *Fujii Shuntaro 1,Kuroki Shin-Ichiro 1,Kotani Koji 1, Ito Takashi 1 |
| 15 | Low Temperature Fabrication of TFTs using Plasma Hydrogenation
and H2O Vapor Heat Treatment
| TUAT * Kazuya Kogure 1,Yuta Mizutani 1, Toshiyuki Sameshima 1 |
| 16 | Conduction Mechanism in the high Temperatures for Tunneling-Dielectric TFT | Hyogo Univ. 1, Kansai Univ. 2, Hiroshima Univ. 3 *Takahiro Kobayashi 1, Naoto Matsuo 1, Akira Heya 1,
akayuki Tochio 2, Yasuhisa Omura 2, Kensaku Ohkura 3 and Shin Yokoyama 3
|
| 17 | Evaluation of turn-on transient characteristics of poly-Si TFT | Osaka Univ. 1, JST-CREST 2 T. Ota 1, J. Hayashi 1, H. Tsuji 1, 2, Y. Kamakura 1, K. Taniguchi 1 |
| 18 | Charge pumping characteristics in low-temperature large-grain poly-Si TFTs | Shimane Univ. 1,ALTEDEC. 2 *Kato toshihiro 1,Kawachi Genshiro 2,Tsuchiya Toshiaki 1 |
| 19 | Magnetic Area Sensor using Poly-Si Hall Devices | Ryukoku Univ. 1,Innovative Materials and Processing Res. Ctr. 2 *Yamaguchi Yohei 1,Hashimoto Hayami 1,Hirako Masaaki 1,Yamaoka Toshifumi 1,
Tani Satoshi 1,Kimura Mutsumi 1,2 |
| 20 | Reticle Free Expose Method For Suppressing Fluctuation of Sensitivity due to Wet Etching Process of Piezoresistive Pressure Sensors | Graduate School of Science and Technology Kumamoto Univ. *Hamaguchi Seiji, Siotsu Keisuke, Soh Yuki, Miyamoto Yasuo, Kubota Hiroshi |
| 13.6 Si Devices/Integration Technology |
| March 17 9:00～12:00 |
| 17a-A - 1～8 |
| | 1 | Advanced Research on High-Field Effects in Scaled MOSFET, and Applied Research to Industries | Hitachi Research Institute Eiji Takeda |
| | | Break 9:50～10:00 | |
| △ | 2 | Analysis of Origins of Threshold Voltage Variability by its Process Dependence | MIRAI-Selete 1, Hiroshima City Univ. 2, IIS, Univ. of Tokyo 3 *Tsunomura Takaaki 1, Nishida Akio 1, Yano Fumiko 1, Takeuchi Kiyoshi 1, Inaba Satoshi 1, Kamohara Shiro 1, Terada Kazuo 2, Hiramoto Toshiro 1,3, Mogami Tohru 1 |
| 3 | Anomalous Back-Bias Dependence of Threshold Voltage Variability in NMOSFETs Due to High Concentration Regions near Source and Drain
| IIS Univ. of Tokyo 1, MIRAI-Selete 2 *Yamato Ichiro 1, Toshiro Hiramoto 1,2 |
| △ | 4 | Improvement of Static and Write Noise Margins in SRAM by Post-Fabrication Self-Convergence Technique
| IIS, Univ. of Tokyo 1, Chuo Univ 2 Suzuki Makoto 1,2, Saraya Takuya 1, Shimizu Ken 1, Sakurai Takayasu 1, Hiramoto Toshiro 1
|
| | | Break 10:45～11:00 | |
| 5 | Variability-Tolerant CMOS Gates Using Resistive Switching Devices | Tokyo Inst. of Tech. *Yamamoto Shuu'ichirou, Sugahara Satoshi |
| 6 | Variability analysis of TiN metal-gate FinFETs | National Institute of AIST K. Endo, S. O’uchi, Y. Ishikawa, Y. Liu, T. Matsukawa, K. Sakamoto, J. Tsukada, H. Yamauchi, and M. Masahara |
| 7 | Gate Voltage Dependence of RTN Trap Number | NEC Electronics Corp. 1 *Toshiharu Nagumo 1, Kiyoshi Takeuchi 1, Shinji Yokogawa 1, Kiyotaka Imai 1, Yoshihiro Hayashi 1 |
| ▲ | 8 | Direct Observation of Fluctuation in the Carrier Capture Process of
Single Interface Traps in MOSFETs
| Shimane Univ. 1,Semiconductor Leading Edge Tech. Inc. 2 *Ming Hu 1, Yuta Morimura 1, Tohru Mogami 2, Toshiaki Tsuchiya 1 |
| 13.6 Si Devices/Integration Technology |
| March 17 13:00～17:15 |
| 17p-B - 1～16 |
| 1 | Optical Response of Si-Quantum-Dots/NiSi-Nanodots Hybrid Stacked Floating Gate | Hiroshima Univ. 1 *Morisawa Naoya 1,Ikeda Mitsuhisa 1,Nakanishi Sho 1,Kawanami Akira 1,Makihara Katsunori 1,Higashi Seiichiro 1,Miyazaki Seiichi 1 |
| 2 | MIS Memory Formed by Sputter SiC Layer | Tokyo Univ. of Agri & Tech. 1,Osaka Pref.Univ. 2 Keishi Iwasaki1,Hiromi Hasegawa1,Yuuiti Kawamura2,Naohisa Inoue2,Yoshiyuki Suda1 |
| 3 | A Zero Vth Memory Cell Ferroelectric-NAND Flash Memory with Read Disturb, Program Disturb and Data Retention Improvement for Enterprise SSD | Univ. of Tokyo 1, AIST 2 *Teruyoshi Hatanaka 1, Mitsue Takahashi 2, Shigeki Sakai 2, Ken Takeuchi 1 |
| 4 | A Negative Word-line Voltage Step-Down Erase Pulse Scheme with ΔVTH=1/6ΔVERASE for Enterprise SSD Application Ferroelectric(Fe)-NAND Flash Memories | University of Tokyo, Dept. of Electrical Engineering and Information SystemsNational Institute of Advanced Industrial Science and Technology 2 Ryoji Yajima 1, Teruyoshi Hatanaka 1, Mitsue Takahashi 2, Shigeki Sakai 2,
Ken Takeuchi 1 |
| 5 | A 1.2V Operation 2.43 Times Higher Power Efficiency Adaptive Charge Pump Circuit with Optimized VTH at Each Pump Stage for Ferroelectric-NAND Flash Memories
| Univ. of Tokyo 1,AIST 2 *Noda Shinji 1,Hatanaka Teruyoshi 1,Takahashi Mitsue 2,Sakai Shigeki 2,Takeuchi Ken 1 |
| 6 | A 0.5V Operation Ferroelectric 6T-SRAM | Univ. of Tokyo 1, AIST 2 Shuhei Tanakamaru 1, Teruyoshi Hatanaka 1, Ryoji Yajima 1, Mitsue Takahashi 2, Shigeki Sakai 2 and Ken Takeuchi 1 |
| 7 | Large Magnetoresistance Effect in Silicon in Non-Ohmic Transport Regimes | ICR Kyoto Univ. 1, NIMS 2 Michael P. Delmo 1, Shinya Kasai 2, Kensuke Kobayashi 1, Teruo Ono 1 |
| ▲ | 8 | The effect of anneal ambient on switching property with Pt/TiO2/Pt structure | Hiroshima Univ. 1 Wei Guobin 1, Ohta Akio 1, Makihara Katsunori, Seiichi Miyazaki |
| 9 | Multi-level and Low Voltage Operation for Bipolar-type ReRAM using Ta2O5/TiO2 stack | NEC Device Platforms Res. Labs. 1 *Terai Masayuki 1, Sakotsubo Yukihiro 1, Kotsuji Setsu 1, and Hada Hiromitsu 1 |
| | | Break 15:15～15:30 | |
| 10 | Nonvolatile TiOx/TaSiOy Solid-electrolyte Switch Integrated in Cu Interconnects | NEC 1, NIMS 2 *Munehiro Tada 1, Toshitsugu Sakamoto 1, Naoki Banno 1, Shinji Ishida 1, Yukisige Saito 1, Yuko Yabe 1, Hiromitsu Hada 1, Masakazu Aono 2 |
| 11 | Influences of secondary protons and alphas produced by nuclear reactions on cosmic-ray neutron induced soft errors | Kyushu Univ. 1, Tsukuba Univ. 2, STARC 3 *Abe Shin-ichiro 1, Watanabe Yukinobu 1, Sano Nobuyuki 2, Tosaka Yoshiharu 3, Tsutsui Masafumi 3, Furuta Hiroshi 3, Imamura Takeshi 3 |
| 12 | Scalability of the NEMS memory device by electromechanical simulation | QNERC, Tokyo Tech. 1, Southampton Univ. 2, Tokyo Tech. 3, SORST-JST 4 *Nagami Tasuku 1,4, Tsuchiya Yoshishige 2,4, Mizuta Hiroshi 2,3,4, Uchida Ken 3,4, Oda Shunri 1,4 |
| △ | 13 | RF Variable Inductor with MEMS Circular Actuator | Integrated Reserch Inst. Tokyo Inst. of Tech *Shirane Atsushi 1,Mizuochi Yutaka 1,Amakawa Shuhei 1,Ishihara Noboru 1,Masu Kazuya 1 |
| △ | 14 | Effect of Gap Narrowing between Electrodes on Output for Electrostatic MEMS Energy Harvester | NTT Microsystem Ingegration Laboratory *Kazuyoshi ono 1, Norio Sato 1, Toshishige Shimamura 1, Mamoru Ugajin 1, Yasuhiro Sato 1, |
| 15 | Dependence on the Trench Width of MEMS Sealing Film Formation | NTT-AT 1, NTT MI Labs. 2 *Toshikazu Kamei 1, kazuyoshi Ono 2, Takaaki Matsushima 1, Kei Kuwabara 2,
Kazuhiko Takagahara 2, Kazuhisa Kudou 1, Masaki Yano 1, Norio Sato 2, Yasuhiko Sato 2, Katsuyuki Machida 1
|
| 16 | An Ultra-wideband 2.6-8 GHz Band 10 dB Voltage Gain Receiver Frontend Low Noise Amplifier for Inter and Intra Chip Wireless communication | Hiroshima Univ. *Azhari Afreen 1, Sasaki Nobuo 1, Toya Akihiro 1, Kubota Shinichi 1, Takamaro Kikkawa 1 |
| 13.6 Si Devices/Integration Technology |
| March 18 9:00～17:30 |
| 18a-B - 1～11 |
| △ | 1 | Tunnel spectroscopy of electron subbands in thin SOI MOSFETs | NTT Basic Research Labs. *Jinchiro Noborisaka, Katsuhiko Nishiguchi, Yukinori Ono, Hiroyuki Kageshima, Akira Fujiwara |
| △ | 2 | Direct Observation of Subband Structures in (110) pMOSFETs under High Magnetic Field | Tokyo Tech. 1, QNERC, Tokyo Tech. 2, PREST-JST 3 Takahashi Tsunaki 1, Yamahata Gento 1, Ogi Jun 1, Kodera Tetsuo 2, Oda Shunri 2, Uchida Ken 1,3 |
| 3 | Comprehensive Understanding of Surface Roughness Limited Mobility in Unstrained- and Strained-Si MOSFETs by High Resolution TEM Measurements and Novel Characterization Scheme of Si/SiO2 Interface Roughness | Univ. of Tokyo 1, Hitachi High-technologies Corporation 2 Yi Zhao 1, Hirosaki Matsumoto 2, Takeshi Sato 2, Susumu Koyama 2, Mitsuru Takenaka 1,
and Shinichi Takagi 1
|
| 4 | Universal Understanding of Substrate impurities- and Interface States-induced Coulomb Scattering in Biaxially-strained Si n and pMOSFETs | Univ. of Tokyo 1 Yi Zhao 1, Mitsuru Takenaka 1, and Shinichi Takagi 1 |
| 5 | Physical Understandings of Si (110) Hole Mobility in Ultra-Thin Body pFETs by <110> and <111> Uniaxial Compressive Strains | IIS, Univ. of Tokyo *Ken Shimizu 1, Takuya Saraya 1, Toshiro Hiramoto 1, |
| | | Break 10:15～10:30 | |
| 6 | Comprehensive Study on Electron Mobility and Band Gap in Tensile Strained Bulk Ge | Toshiba Corporation, Research & Development Center *Mizuki Ono 1, Tsutomu Tezuka 1 |
| 7 | Impact of Correlation between Conductivity Mass and Normal Mass on Coulomb Scattering Mobility in Si n-MOS Inversion-Layer | Toshiba Corporation 1,Tokyo Inst. of Tech. 2,Tokyo Univ. 3 *Yukio Nakabayashi 1,Takamitsu Ishihara 1,Toshinori Numata 1,Ken Uchida 2,Shinichi Takagi 3 |
| △ | 8 | Long-Range Coulomb Interaction for Channel Electrons in nano-scale MOSFETs | Univ. Tsukuba, Inst. Appl. Phys. *Nakanishi Kohei 1, Karasawa Takahiko 1, Sano Nobuyuki 1 |
| 9 | Electron scattering by remote impurities in gate electrodes in Si MOSFETs | IIS/INQIE Univ. of Tokyo 1, Dept. of EE Univ. of Tokyo 2 *Park KyungHwa 1, Hirakawa Kazuhiko 1, Takagi Shinichi 2 |
| △ | 10 | MISFET Fabrication on InGaAs Channels Bonded on Si Substrates | AIST 1, Sumitomo Chemical 2, The Univ. of Tokyo 3 *Yuji Urabe 1, Hideki Takagi 1, Noriyuki Miyata 1, Tetsuji Yasuda 1, Hisashi Yamada 2, Noboru Fukuhara 2, Masahiko hata 2, Masafumi Yokoyama 3, Mitsuru Takenaka 3, Shinichi Takagi 3 |
| △ | 11 | Mobility enhancement of ultrathin body III-V-OI MOSFETs | The University of Tokyo 1, AIST 2, Sumitomo Chemical Co. Ltd. 3 Mobility enhancement of ultrathin body III-V-OI MOSFETs |
| | | Lunch 12:00～13:15 | |
| 13:00～13:15第１回応用物理学会シリコンテクノロジー分科会論文賞・研究奨励賞表彰式 |
| 18p-B - 1～15 |
| |
1 |
Theoretical Study on Chemical Gradient Generated in Chemically Amplified Resists Based on Polymer Deprotection upon Exposure to Extreme Ultraviolet Radiation |
The Institute of Scientific and Industrial Research, Osaka University Takahiro Kozawa and Seiichi Tagawa |
| |
2 |
Electrical injection and detection of spin-polarized electrons in silicon through an Fe3Si/Si Schottky tunnel barrier |
Department of Electronics, Kyushu University 1, PRESTO JST 2, Department of Electrical and Electronic Engineering, Tokyo City University 3, INAMORI FRC, Kyushu University 4 Yuichiro Ando1, Koji Ueda1, Kohei Hamaya1,2, Kentarou Sawano3, Takashi Kimura4, and Masanobu Miyao1 |
| |
3 |
Surface-Potential-Based Drain Current Model for Polycrystalline Silicon Thin-Film Transistors |
Graduate School of Engineering, Osaka University 1, Advanced LCD Technologies Development Center Co., Ltd. 2 Hiroshi Tsuji1, Tsuyoshi Kuzuoka1, Yuji Kishida1, Yoshiyuki Shimizu1, Masaharu Kirihara1, Yoshinari Kamakura1, Masato Morifuji1, Yoshiteru Shimizu2, Soichiro Miyano2, and Kenji Taniguchi1 |
| | | Break 14:10～14:15 | |
| ▲△ | 4 | A Comparative Study of Noise Behavior between Pulsed and DC Operation modes of MOSFET based Charge Transfer Device | RIE, Shizuoka Univ. 1 *Singh Vipul 1,Inokawa Hiroshi 1,Satoh Hiroaki 1 |
| 5 | Low-temperature characteristics of indium-doped SOI pMOSFETs | NTT Basic Research Laboratories Yukinori Ono 1, Mohammed A. H. Khalafalla 1, Akira Fujiwara 1 |
| 6 | High Performance GeO2/Ge nMOSFETs with Source/Drain Junction Formed by Gas Phase Doping | The Univ. of Tokyo 1,JST-PRESTO 2 *Kiyohito Morii 1,Takashi Iwasaki 1,Ryosho Nakane 1,Mitsuru Takenaka 1,2,Shinichi Takagi 1 |
| △ | 7 | Nickel-silicide metal source/drain transistors with ultimately low Schottky barrier by sulfur implantation after silicidation process | Toshiba Corp. *Yoshifumi Nishi, Atsuhiro Kinoshita |
| △ | 8 | Reduction of GIDL and its origins in Si nanowire transistors | Corporate R&D Center, Toshiba *Koichiro Zaitsu 1, Masumi Saitoh 1, Yukio Nakabayashi 1, Takamitsu Ishihara 1, Toshinori Numata 1 |
| 9 | Fabrication of 20-nm Gate-Length FinFETs by Using PVD-TiN Wet Etching | AIST 1, Meiji Univ.2 Yongxun Liu 1, Takahiro Kamei 2, Kazuhiko Endo 1, Ouchi Shinichi 1, Junichi Tsukada 1, Hiromi Yamauchi 1, Tetsuro Hayashida 2, Yuki Ishikawa 1, Takashi Matsukawa 1, Kunihiro Sakamoto 1, Atsushi Ogura 2, Meishoku Masahara 1 |
| | | Break 15:45～16:00 | |
| 10 | Control of Ni Diffusion in Si Nanowire covered with oxide | Tokyo tech .FRC 1,IGSSE 2 *Shigemori Naoto 1, Arai Hideaki 1,Satou Sousi 1, Kakusima Kuniyuki 2 ,Parhat Ahmet 1,
Nishiyama Akira 2 ,Tutui kazuo 2,Sugii Nobuyuki 2,Natori Kenji 1,Hattori Takeo 1,
Iwai Hirosi 1 |
| 11 | Electrical characteristics of Si nanowire FETs with various cross-sectional sizes | Tokyo Tech. FRC. 1, Tokyo Tech. IGSSE. 2, Waseda Univ. NTRL. 3 *Sato Soshi 1, Arai Hideaki 1, Kakushima Kuniyuki 2, Parhat Ahmet 1, Ohmori Kenji 3, Natori Kenji 1, Iwai Hiroshi 1, Yamada Keisaku 3 |
| 12 | Design Methodology of GAA Wire MOSFET | ORDIST 1, Kansai University 2, Grad.School of Eng. Sci. 3 *Osanori Hayashi 1 3, Syunsuke Nakano 1 3, Yasuhisa Omura 1 2 3 |
| 13 | Diameter-Dependent Electrical Properties of Ballistic Silicon Nanowire Transistor | FRC, Tokyo Tech. 1, IGSSE, Tokyo Tech. 2, GSPAS, Tsukuba Univ. 3 *Lee Yeonghun 1,Kakushima Kuniyuki 2, Shiraishi Kenji 3, Natori Kenji 1, Iwai Hiroshi 1 |
| ▲ | 14 | Electron Quantum Interference Effects in a Si Nanowire | RIKEN1, Tokyo Univ. Sci.2, NIMS3 *Shaoyun Huang1, Fuminori Kutsuna1,2, Naoki Fukada3, Koji Ishibashi1,2 |
| ▲△ | 15 | Simulation and experimental study of single electron trapping
in doped nanoscale FETs
| RIE Shizuoka Univ. 1 *Earfan Hamid 1, Juli Cha Tarido 1, Miki Sakito 1, Mizuno Takeshi 1, Daniel Moraru 1, Tabe Michiharu 1 |
| 13.6 Si Devices/Integration Technology |
| March 19 9:00～12:00 |
| 19a-B - 1～11 |
| 1 | Device Technologies for SiGe Hole Tunneling RTD | Tokyo Univ of Agriculture and Technology.1 *Arimitsu Shoichi 1,Nambu Saki 2,Suda yoshiyuki 3 |
| 2 | Electron-Tunneling RITD Formed by Sputter Epitaxy | Tokyo Univ of Agric and Tech *Kawamura Junya 1,Suda Yoshiyuki 1 |
| 3 | Simulation and fabrication of silicon quantum dots with double top gates | Tokyo Tech. 1,QNERC, Tokyo Tech. 2,NanoQuine, Univ. of Tokyo 3,SORST-JST 4 *Kambara Tomohiro 1,Kodera Tetsuo 2,3,Yamahata Gento 2,Uchida Ken 1,4,Oda Shunri 2,4 |
| ▲ | 4 | Simulation of silicon double quantum dots device fabricated by combining lithographical and electrostatical approaches | QNERC Tokyo Inst. Of Tech.1 Muhammad A. Sulthoni 1, Tetsuo Kodera 1, Ken Uchida 1, Shunri Oda 1 |
| △ | 5 | Analysis of Formation Mechanism of Si SETs fabricated by PADOX Method | IST. Hokkaido Univ. 1, NTT Basic Research Labs. 2 Yuki Kato 1, Mingyu Jo 1, Masashi Arita 1, Akira Fujiwara 2 Yasuo Takahashi 1 |
| ▲△ | 6 | Fabrications of A Germanium Nanowire Single-electron Transistor | RIKEN 1, Tokyo Inst. of Techn. 2, NIMS 3 *Shin Sung-Kwon 1,2, Huang Shaoyun 1, Fukata Naoki 3, Ishibashi Koji 1,2 |
| | | Break 10:30～10:45 | |
| ▲ | 7 | Single-Dopant Control in Single-Electron Transport through Arrays of Dopants | RIE Shizuoka Univ. 1 *Moraru Daniel 1, Miki Sakito 1, Tarido Juli Cha 1, Mizuno Takeshi 1, Tabe
Michiharu 1 |
| 8 | Single electron transistor characteristics with disk-shaped channel structure | RIE Shizuoka Univ. 1 *Nakamura Ryusuke 1, Yokoi Kiyohito 1, Moraru Daniel 1, Mizuno Takeshi 1, Tabe Michiharu 1 |
| ▲ | 9 | Interaction of Single Photon and Single Electron Transport in Phosphorus-Doped SOI-FET
| RIE Shizuoka Univ. 1 *Arief Udhiarto 1, Daniel Moraru 1, Miki Sakito 1, Mizuno Takeshi 1, Tabe Michiharu 1 |
| ▲ | 10 | Observation of Si Channel Potential by LT-KFM | RIE Shizuoka Univ. 1 * Miftahul Anwar 1, kawai Yuya 1, Miki Sakito 1, Daniel Moraru 1, Mizuno Takeshi 1, Tabe Michiharu 1 |
| 11 | High-Speed Operation of MOSFET Electrometer by Using RF Reflection | RIE, Shizuoka Univ. *Mitsuru Kawai 1,Makoto Nagasaka 1,Hiroshi Inokawa 1,Hiroaki Satoh 1 |
| 13.7 Simulation |
| March 18 9:30～12:00 |
| 18a-C - 1～9 |
| 1 | A Theoretical Study of Gate Voltage Dependence of Electron-Modulated-Acoustic-Phonon Interactions in Silicon Nanowire MOSFETs | Nagoya Univ. 1, Osaka Univ. 2, JST, CREST 3 *Hattori Junichi 1,3, Uno Shigeyasu 1,3, Mori Nobuya 2,3, Nakazato Kazuo 1 |
| 2 | Transient Simulation of Heat Generation and Transport in Nanoscale MOSFETs | Osaka Univ. 1, Waseda Univ. 2, JST-CREST 3 *Yoshinari Kamakura 1,3, Tomofumi Zushi 2, Takanobu Watanabe 2, Nobuya Mori 1,3, Kenji Taniguchi 1 |
| 3 | Analysis of the Heat Conduction in Silicon Nanowire by Classical Molecular Dynamics Simulation | Grad. School of Eng., Kyoto Univ. 1, Materials Dep., Univ. of California, Santa Barbara 2 *Saegusa Takumi 1, Takao Yoshinori 1, Eriguchi Koji 1, Ono Kouichi 1, Ohta Hiroaki 2 |
| 4 | Influence of Dimensional Reduction to 2D on Electronic States and Piezoresistivity in Single-Crystal Silicon | Ritsumeikan Univ. Nakamura Koichi, Toriyama Toshiyuki, Sugiyama Susumu |
| | | Break 10:30～10:45 | |
| 5 | First Principles Analysis of Enhanced Leakage Currents Derived from Peroxides at the Si/SiO2 Interface | Cybernet Systems Co.,Ltd. 1
*Inoue Noritaka 1, Usui Shinji 1 |
| 6 | Subband representation in atomistic transport simulation of quantum nanowires | Osaka Univ.1, JST CREST 2 Gennady Mil'nikov 1,2, Nobuya Mori 1,2, Yoshinari Kamakura 1,2 |
| | 7 | Compact Modeling of I-V Characteristics of Ballistic GAA-MOSFET | Nagoya Univ. 1, Osaka Univ. 2, JST, CREST. 3 *Tatsuhiro Numata 1,3, Shigeyasu Uno 1,3, Kazuo Nakazato 1, Gennady Mil'nikov 2,3, Yoshinari Kamakura 2,3, Nobuya Mori 2,3 |
| 8 | Analysis of 20nm CMOS Inverter Delay using λ-VG MOSFET Model | Kyoto Inst. of Technology 1 *Inoue Fumitaka 1,Hiroki Akira 1,Tomiyama Kenji 1,Nakade Yasunari 1 |
| 9 | Analytical Model for Two-dimensional Ion Implantation Profile in MOS Structure for Simple Two-dimensional Device Simulation and Inverse Modeling
| Fujitsu Lab. 1, FML 2 * Kunihiro Suzuki, Ryo Tanabe |