| 10 Spintoronics and Magnetics |
| 10.1 Synthesis and Properties of Novel Spintronics and Magnetic Materials |
| March 17 9:00`18:15 |
| 17a-ZH - 1`11 |
| 1 | Annealing temperature dependence of magneto-transport properties in Co2MnSi/Ag/Co2MnSi CPP-GMR devices | Tohoku Univ. IMR@*K. Izumi, Y. Sakuraba, S. Bosu, K. Saito, K. Takanashi |
| 2 | Strain effect and magnetic and electronic structures of Heusler alloy thin films on MgAl2O4 | Nagoya Univ.@*Hirohito Fujita, Naoto Fukatani, Yoichi Takeda, Kenji Ueda, Hidefumi Asano |
| ’ | 3 | Spin-dependent transport in magnetic multilayers with semimetallic Fe2VAl Heusler alloy | Tohoku Univ. 1, WPI Tohoku Univ. 2@*Kubota Takahide 1, Oogane Mikihiko 1, Mizukami Shigemi 2, Naganuma Hiroshi 1, Ando Yasuo 1 |
| ’ | 4 | Characterization of full-Heusler Co2FeAlxSi1-x alloy thin films formed by RTA | ISEL, Tokyo Inst. of Tech. 1,CREST, JST 2@*Satou Mitsuhiro 1,Takamura Yota 1,Sugahara Satoshi1,2 |
| ’ | 5 | Fabrication and structural analysis of Co2FeSi/SiOxNy/Si tunnel junctions | ISEL, Tokyo Inst. of Tech 1, Dept. of Electrical Eng. and Info. Syst., Univ. of Tokyo 2, CREST, JST 3@*Kengo Hayashi 1, Yota Takamura 1, Ryosho Nakane 2, Satoshi Sugahara 1,3 |
| | | Break 10:15`10:30 | |
| 6 | Magnetic and Electrical properties of Ruthenium based Heusler alloys Ru2Mn1-xCrxGe | Aoyama Gakuin Univ. 1,NIMS 2,KFT 3@*Hirose Makoto 1,Mizusaki Soichiro 1,Nagata Yujiro 1,Ozawa Tadashi 2,Noro Yoshihiko 3 |
| £’ | 7 | Defects induced in nonstoichiometric Co2MnGe thin films investigated through saturation magnetization | Div. of Electronics for Informatics, Hokkaido Univ. 1@*Li Guifang 1, Taira Tomoyuki 1, Hirada Shin-nosuke 1,Honda Yusuke 1, Matsuda Ken-ichi 1, Uemura Tetsuya 1, Yamamoto Masufumi 1 |
| ’ | 8 | Spin-dependent conductance characteristics of Co2MnGe/MgO/Co2MnGe magnetic tunnel junctions | Hokkaido Univ. 1@*Hirata Shinnosuke 1, Taira Tomoyuki 1, Ishikawa Takayuki 1, Matsuda Ken-ichi 1, Uemura Tetsuya 1, Yamamoto Masafumi 1 |
| 9 | First-principles calculations of electronic structures of L10-FeNi and tunneling conductance of the magnetic tunnel junction | RIEC, Tohoku Univ. 1,@*Yasushi Kuwahara 1,Yoshio Miura 1,Kazutaka Abe 1,Masafumi Shirai 1, |
| 10 | Structure of Magnetic Tunnel Junctions with
Perpendicularly Magnetized L10-FePt/MgO/L10-CoPt | Tohoku Univ.@*Nobuhito Inami, Hiroshi Naganuma, Takamichi Miyazaki, Kazuhisa Sato, Toyohiko J. Konno, Gukcheon Kim, Mikihiko Oogane, Yasuo Ando |
| ’ | 11 | Electric-field control of magnetic properties of CoFeB in capacitor structure | RIEC RIEC Tohoku Univ. 1@*Shun Kanai 1,Masaki Endo 1,Shoji Ikeda 1,Fumihiro Matsukura 1,Hideo Ohno 1 |
| | | Lunch 12:00`12:45 | |
| 17p-ZH - 1`21 |
| 1 | Spin filter devices with NiFe2O4 spinel layers | AIST-NeRI 1, PRESTO 2, IMR 3@*Nagahama Taro 1,2, Sugihara Atsushi 1,3, Yuasa Shinji 1 |
| 2 | MBE growth of highly-oriented ferromagnetic Fe4N thin films on MgO(001) substrates | Inst. of Appl. Phys., Univ. of Tsukuba 1@*Ito Keia 1, Lee Geun Hyoung 1, Suemasu Takashi 1 |
| 3 | Evaluation of magnetic properties on an amorphous GdFe ferrimagnet through the observation of photo-induced precession of magnetization | NHK 1, Tokyo Inst. of Technology 2@*Hashimoto Yusuke 1, Munekata Hiro 2, Aoshima Ken-ichi 1, Kuga Kiyoshi 1, Shimidzu Naoki 1
|
| 4 | RF response in (Ga,Mn)As based MTJ | Tokyo Tech.@*Inoue Yuta 1, Yamaguchi Takeshi 2, Yoshino Junji 1 |
| ’ | 5 | All-optical 90-degree magnetization switching in a ferromagnetic (Ga,Mn)As microbar | Imaging Sci. & Eng. Lab., Tokyo Inst. of Tech.@Jun Aoyama 1, Satoi Kobayashi 1, Hiro Munekata 1 |
| 6 | Analysis of 90-degree switching in (Ga,Mn)As microbars on the basis of
local magneto-optical signals | Imaging Sci. & Eng. Lab., Tokyo Inst. of Tech.@Daisuke Nakahara 1,Jun Aoyama 1,Keita Suda 1,Satoi Kobayashi 1,Hiro Munekata 1 |
| 7 | Valence-Band Structure of Ferromagnetic-Semiconductor GaMnAs Studied by Spin-Dependent Resonant Tunneling Spectroscopy
| The Univ. of Tokyo 1, PRESTO JST 2@Ohya Shinobu 1,2, Muneta Iriya 1, Pham Nam Hai 1, Tanaka Masaaki 1 |
| ’ | 8 | Systematic analysis of the quantum levels in GaMnAs surface layers | Tokyo Univ. 1, PRESTO JST 2@*Takata Kenta 1, Ohya Sinobu 1,2, Tanaka Masaaki |
| ’ | 9 | Effective magnetic-field induced by Dresselhaus spin-orbit interaction in (Ga,Mn)As | RIEC, Tohoku Univ.@Endo Masaki 1, Matsukura Fumihiro 1, Ohno Hideo 2 |
| | | Break 15:00`15:15 | |
| 10 | Spin interaction in NiFe/GaAs hybrid structure at room temperature without magnetic field | Univ. Tokyo 1, Tohoku Univ. 2, RICOH Co., LTD 3@Nishibayashi Kazuhiro 1, Kawazoe Tadashi 1, Saito Shin 2, Takahashi Migaku 2, Mori Tetsuji 3, Fukuda Hiroaki 3, Ohtsu Motoichi 1 |
| 11 | Interaction of localized spins in Be doped low-temperature-grown GaAs | Japan Advanced Institute of Science and Technlogy@*Dae-Won Jung 1, Kouji Iwataki 1, Nobuo Otsuka 1 |
| 12 | Reduction of schottky barrier height for Fe/n-GaAs junction by inserting a very thin GaOx layer | AIST Nanoelectronics Res. Inst. 1, Toho Univ. 2@Hidekazu Saito 1, Yusuke Mineno 2, Shinji Yuasa 1, and Koji Ando 1 |
| 13 | Structural and magnetic properties of binary compound CrTe grown on ZnTe(001) by MBE | Tsukuba Univ.1,NIMS.2@*Nishio Yotaro 1,Ishikawa Koichiro 1,Kuroda Shinji 1,Mitome Masanori 2,Bando Yoshio 2 |
| 14 | MBE growth and magnetic property of quaternary compound semiconductor (Cd,Mn,Cr)Te | Grad. School of Pure & Appl. Sci., Univ. Tsukuba 1@*Koichiro Ishikawa 1, Shinji Kuroda 1 |
| ’ | 15 | Magnetic and structural properties of epitaxial Ge1-xMnx films grown on Ge (111) substrate
| The Univ. of Tokyo 1, PRESTO JST 2@*Shinsuke Yada 1, Ryohei Okazaki 1, Shinobu Ohya 1,2, Masaaki Tanaka 1 |
| £ | 16 | Influence of composition on structure and magnetic properties of Mn-Ga alloy films | WPI-AIMR, Tohoku Univ. 1, Graduate School of Engineering, Tohoku Univ. 2@* F. Wu 1, S. Mizukami 1, D. Watanabe 1, E. P. Sajitha 1, H. Naganuma 2, M. Oogane 2, Y. Ando 2, T. Miyazaki 1 |
| 17 | Preparation and characterization of crystalline MnSb films and its magnetic anisotropy | Imaging Sci. & Eng. Lab. Tokyo Inst. of Tech.@Daisuke Yoshida 1, Taku Hanna 1, Hiro Munekata 1 |
| 18 | Dependence of ZnSnAs2:Mn epitaxial films properties on Mn doping concentration | Nagaoka Univ. of Tech. 1@*Oomae Hiroto 1, Joel T. Asubar 1, Haneta Masaru 1, Agatsuma Yuji 1, Ishibashi Takayuki 1, Jinbo Yoshio 1, Uchitomi Naotaka 1
|
| 19 | The low temperature growth of GaCrN and its characterization | Osaka University ISIR@P.H. Fan, Y.K. Zhou*, H. Tani, K. Higashi, S. Hasegawa and H. Asahi |
| ’ | 20 | Growth of Diluted Magnetic Semiconductor Superlattice GaAsGd/GaAs by MBE and Optical and Magnetic Properties | Faculty of Engineering, Kagawa Univ. 1, Faculty of Education, Kagawa Univ.2@*N.Sugiyama1, N.Takata1, H.Miyagawa1, S.Koshiba1, N.Takahashi2, N.Tsurumachi1, S.Nakanishi1, H.Itoh1 |
| 21 | Magnetic polaron in the GaGdN/AlGaN multi-quantum well superlattice structure | Osaka University, ISIR@Y. K. Zhou*, M. Almokhtar, H. Tani, S. Emura, S .Hasegawa, H .Asahi |
| 10.1 Synthesis and Properties of Novel Spintronics and Magnetic Materials |
| March 18 9:00`12:00 |
| 18a-ZK - 1`11 |
| 1 | Electronic and Spin states of C60-Co Compound Affecting Giant TMR Effect | ASRC JAEA 1, IMS 2, Chiba Univ. 3, Univ. of Tokyo 4, Kyoto Univ. 2@*Yoshihiro Matsumoto 1, Seiji Sakai 1, Shiro Entani 1, Shin-ichi Nagamatsu 2, Ikuko Hojyo 3, Takashi Fujikawa 3, Toshihiro Shimada 4, Hiroshi Naramoto 1, Yoshihito Maeda 1,5, Toshihiko Yokoyama 2 |
| 2 | Spin-polarized Current Flow in the C60-Co Hybrid Films with Giant TMR Effect | ASRC Japan Atomic Energy Agency 1, IMR Tohoku Univ. 2, National Inst. Mater. Sci.@3, Kyoto Univ.4@*Seiji Sakai1, Yoshihiro Matsumoto1, Shiro Entani1, Isamu Sugai2, Seiji Mitani3,
Koki Takanashi1,2, Yoshihito Maeda1,4 |
| 3 | Magnetoresistance effect in vertical structures with Rubrene-Co nano-composites | Engineering Science, Osaka Univ. 1, JST-PRESTO 2@*Shiomi Genki 1, Sakai Yutaka 1, Hatanaka Daiki 1, Seki Takeshi 1, Nozaki Takayuki 1, Shinjo Teruya 1, Suzuki Yoshishige 1, Shiraishi Seiji 1,2 |
| 4 | Channel length dependence of the electrical transport mechanism and the magnetoresistance effect in Rubrene-Co nanocomposites
| Graduate School of Engineering Science, Osaka Univ. 1, JST-PRESTO 2@*Sakai Yutaka 1, Hatannaka Daiki 1, Nozaki Takayuki 1, Shinjo Teruya 1, Masashi Shiraishi 1,2, Suzuki Yoshishige 1 |
| 5 | Hot-carrier injection into an organic thin film | Graduate School of Engineering Science, Osaka Univ. 1, JST-PRESTO 2@*Hatannaka Daiki 1,Seki Takeshi 1,Nozaki Takayuki 1,Shinjo Teruya 1,Suzuki Yoshishige 1,Shiraishi Masashi 1,2 |
| | | Break 10:15`10:30 | |
| 6 | An observation of growth of ferromagnetic thin films growth on graphite and diamond | Osaka Univ. 1,JST-PRESTO. 2,Tsukuba Univ. 3,AIST. 4@*Yoshikuni Shota 1, Seki Takeshi 1,Shinnjou Teruya 1, Suzuki Yoshishige 1, Shiraishi Masashi 1,2, Mizuochi Norikazu 2,3, Yamasaki Satoru 4 |
| 7 | Injecting Spins into a Single Layer Graphene at Room Temperature | Osaka Univ. 1, JST-PRESTO 2,@*Mitoma Nobuhiko 1, Takano Takumi 1, Shiraishi Masashi 1,2, Nozaki Takayuki 1, Shinjo Teruya 1, Suzuki Yoshishige 1, |
| 8 | Spin polarization of graphene monolayer on Ni(111) surface | Nat. Inst. Materials Sci. 1, Univ. Sci. Technol. China 2, Japan Atomic Energy Agency 3@Xia Sun 1,2, Shiro Entani 3, Mitsunori Kurahashi 1, Taku Suzuki 1, *Yasushi Yamauchi 1 |
| ’ | 9 | Magnetoresistive Effects in Silicon-on-Insulator (SOI) Substrates | Tokyo Univ. of Agr. & Tech. 1@*Toyofuku Takashi 1, Nishimura Shinya 1, Kuwabara Yosuke 1, Shirakashi Jun-ichi 1 |
| ’ | 10 | Magnetoresistive Effects in Discrete Semiconductor Si Devices | Tokyo Univ. of Agr. & Tech. 1@*Nishimura Shinya 1, Toyofuku Takashi 1, Kuwabara Yosuke 1, and Shirakashi Jun-ichi 1 |
| 11 | Ce High Concentration Doping with (3~3) Reconstruction Surface and the Effect for the Magnetic Property of Si:Ce | Graduate School of Engineering, Osaka Pref. Univ.@* Sakurai Shusaku, Shindo Daisuke, Fujimura Norifumi |
| 10.2 Spintronics Devices, Circuits, and Measurements |
| March 17 9:00`18:00 |
| 17a-ZJ - 1`11 |
| 1 | Modulation of Dresselhaus Effect in InAs-based Heterostructure by Strain | Hokkaido Univ., RCIQE@*T. Matsuda 1, K. Yoh 1 |
| 2 | Effect of crystal anisotropy of spin-orbit interaction on spin relaxation | Tohoku Univ. 1, PRESTO-JST 2@*Kunihashi Yoji 1, Kohda Makoto 1,2, Nitta Junsaku 1 |
| 3 | Electrical spin manipulation and effect of in-plane magnetic field on spin interference effect in InGaAs based ring array | Tohoku Univ. 1, PRESTO-JST 2@*Jun Takagi 1, Makoto Kohda 1,2, Junsaku Nitta 1 |
| £ | 4 | Electrical detection of relative strength of Rashba and Dresseshaus spin-orbit interaction in semiconductor wire structure | Tohoku univ. 1, PRESTO-JST 2@*Moulis Sylvain 1,Makoto Kohda 1,2, Junsaku Nitta 1 |
| ’ | 5 | Detection of Spin-polarized carriers on p-InMnAs / n-InAs / Nb junctions | MANA-NIMS 1, Tokyo Univ. of Science 2, NTT Basic Research Lab. 3, Imaging Sci.& Eng. Lab, Tokyo Inst. of Tech. 4@*Nishizawa Nozomi 1, Itabashi Noriyuki 2, Akazaki Tatsushi 3, Kobayashi Satoi 4, Munekata Hiro 4, Takayanagi Hideaki 1,2 |
| 6 | Measurement of spin polarization from magnetite thin film into InGaAs/AlGaAs quantum well | Hokkaido Univ., RCIQE 1,RIES 2@*Suzuki Kenji 1,Kumano Hidekazu 2,Ejiri Takeshi 1,J. Bubesh Babu 1,Yoh Kanji 1 |
| | | Break 10:30`10:45 | |
| 7 | Spin polarization in Fe/GaAs contacts with spin-orbit interaction | Nagoya Univ. 1, Kansai Univ. 2@*Honda Syuta 1, Inoue Jun-ichiro 1, Itoh Hiroyoshi 2 |
| 8 | Read/write operation of Spin-transfer-Torque-Switching (STS) MOSFETs | Toshiba R&D Center@*Marukame Takao 1, Inokuchi Tomoaki 1, Ishikawa Mizue 1, Sugiyama Hideyuki 1, Saito Yoshiaki 1 |
| 9 | Fabrication and characterization of pseudo-spin-MOSFET | ISEL, Tokyo Inst. Tech. 1, Dept. Electrical Eng. and Info. Syst., Univ. of Tokyo 2, MMC, NIMS 3, Dept. Information Processing, Tokyo Inst. Tech. 4, CREST, JST 5@Shuto Yusuke 1,5, Nakane Ryosho 2,5, Wang Wenhong 3,5, Sukegawa Hiroaki 3,5, Yamamoto Shuu'ichirou 4,5, Tanaka Masaaki 2,5, Inomata Koichiro 3,5, Sugahara Satoshi 1,5 |
| 10 | 6T-2MTJ Nonvolatile SRAM Cell based Cache Memory for Ultra-low Power Processor | Toshiba Corporation 1@*Keiko Abe 1, Kumiko Nomura 1, Sumio Ikegawa 1, Tatsuya Kishi 1, Hiroaki Yoda 1 and Shinobu Fujita 1 |
| 11 | Spin dice: Physical random number generator using magnetic tunnel junctions | AIST 1@*Seki Takayuki 1, Fukushima Akio 1, Yakushiji Kay 1, Kubota Hitoshi 1, Yuasa Shinji 1, Ando Koji 1 |
| | | Lunch 12:00`13:00 | |
| 17p-ZJ - 1`19 |
| 1 | Resistivity for Nano-Contact in the Nano-Oxide Layer | Tohoku Univ 1@*Yoshiyuki Watanabe 1, Shohei Kawasaki 1, Masaaki Doi 1, Masashi Sahashi 1 |
| 2 | Measurement of spin penetration depth for various ferromagnetic materials | Tohoku Univ. 1, Univ. of Tsukuba 2, AIST 3@Tamagawa Takashi 1, Taniguchi Tomohiro 2,3, Yakata Satoshi 3, Imamura Hiroshi 3, Naganuma Hiroshi 1, Oogane Mikihiko 1, Ando Yasuo 1 |
| 3 | Relationship between damping factor alpha and resonant linewidth delta H | Magnontech Ltd. 1, KEYCOM Corp. 2@*Takeda Shigeru 1, Suzuki Hirosuke 2 |
| 4 | Study on Field Generating Layer of STO in MAMR Writing Head by Damping Constant | Tohoku Univ.1@*SeungMo Noh1, Daisuke Monma1, Kohsaku Miyake1, Masaaki Doi1, Masashi Sahashi1 |
| ’ | 5 | Microwave emission property of CPP-GMR device with synthetic pin layer | Tohoku Univ. 1,Tohoku WPI 2@*Kawada Yuki 1,Naganuma Hiroshi 1,Oogane Mikihiko 1,Mizukami Shigemi 2,Miyazaki Terunobu 2,Ando Yasuo 1
|
| 6 | Influence of Magnetization Instability of Polarizer on Microwave Oscillation in NCMR-Spin Torque Oscillator | Tohoku Univ. 1, Corporate R&D Center, Toshiba Corp. 2@*T. Nakamura 1, H. Suzuki 1, Y.Okutomi 1, M.Doi1,H. N. Fuke 2, H. Iwasaki 2, and M. Sahashi 1 |
| 7 | Signal-to-Noise Ratios in High-Signal-Transfer-Rate Read Heads Composed of Spin-Torque Oscillators
| Corporate R&D Center, Toshiba Corporation@*Koichi Mizushima 1, Kiwamu Kudo 1, Tazumi Nagasawa 1, Rie Sato 1 |
| 8 | Frequency Modulation of Spin-Torque Oscillator due to Pulsed Magnetic Field | Corporate R&D Center, Toshiba Corporation@*Kudo Kiwamu 1,Nagasawa Tazumi 1,Mizushima Koichi 1,Suto Hirofumi 1,Sato Rie 1 |
| 9 | Magnetic field angular dependence of spin torque diode voltage in magnetic tunnel junctions | Osaka Univ. 1, AIST 2, Canon ANELVA 3@*Ishibashi Shota 1,Seki Takeshi 1,Nozaki Takayuki 1,Suzuki Yoshishige 1,2,Yakata Satoshi 2,Kubota Hitoshi 2,Fukushima Akio 2,Yuasa Shinji 2,Maehara Hiroki 3, Nagamine Yoshinori 3,Tsunekawa Koji 3, David D. Djayaprawira 3,Watanabe Naoki 3
|
| 10 | Spin-torque induced RF oscillation in magnetic tunnel junctions with an Fe-rich CoFeB free layer | Osaka University 1,AIST 2,Canon ANELVA 3@*Masugata Yasutomo 1,Ishibashi Shota 1,Tomita Hiroyuki 1,Seki Takeshi 1,
Nozaki Takayuki 1,Suzuki Yoshishige 1,2,Kubota Hitoshi 2,Fukushima Akio 2,
Yuasa Shinji 2,Maehara Hiroki 3,Nagamine Yoshinori 3,Tsunekawa Koji 3,
David. D.Djayaprawira 3,Watanabe Naoki 3 |
| | | Break 15:30`15:45 | |
| ’ | 11 | Generation of the spin current by spin pumping in ferromagnetic/paramagnetic metallic junctions | IMR, Tohoku Univ. 1, Keio Univ. 2, PRESTO, JST 3@*Yoshino Tatsuro 1, Ando Kazuya 1,2, Kajiwara Yosuke 2, Nakayama Hiroyasu 2, Saitoh Eiji 1,3 |
| £ | 12 | Propagating spin waves in a permalloy strip and its electrical excitation manipulation and detection | Tohoku univ. 1, JST-PRESTO 2@Lihui Bai 1, Makoto Kohda 1,2, Junsaku Nitta 1 |
| 13 | Magnetic Ripple Nucleation under Current Pulses in Permalloy Nanowires | N2RC Osaka Prefecture Univ. 1, ASI RIKEN 2, Inamori Frontier Kyushu Univ. 3, HARL Hitachi 4, DMS Osaka Prefecture Univ. 5, Univ. of Electro-Communications 6, ISSP Univ. of Tokyo 7@*Yoshihiko Togawa 1,2, Takashi Kimura 2,3, Ken Harada 2,4, Akira Tonomura 2,4,
Shigeo Mori 5, Yoshinobu Nakatani 6, Yoshichika Otani 2,7
|
| ’ | 14 | Quantitative estimation of spin diffusion length by using inverse spin-Hall effect induced by magnetization dynamics | Keio Univ. 1, IMR, Tohoku Univ. 2, PRESTO JST 3@*Nakayama Hiroyasu 1,2, Ando Kazuya 1,2, Harii Kazuya 1,2, Yoshino Tatsuro 1,2, Saitoh Eiji 1,2,3 |
| 15 | Concentration dependence of spin Hall effect in Au with Fe and Pt impurities | IMR, Tohoku Univ. 1, NIMS 2,@ Sugai Isamu 1, Mitani Seiji 2, Takanashi Koki 1 |
| ’ | 16 | Structure dependence of the electromotive force in spin batteries | The Univ. of Tokyo 1@Ryota Akiyama 1, Pham Nam Hai 1, Masaaki Tanaka 1 |
| ’ | 17 | Peltier cooling effect in submicron-sized Cu-Ni/Au junctions | AIST 1,NIMS 2,IMR Tohoku Univ. 3@*Atsushi Sugihara 1,3,Kay Yakushiji 1,Akio Fukushima 1,Hitoshi Kubota 1, Shinji Yuasa 1,Atsushi Yamamoto 1,Masaya Kodzuka 2,Tadakatsu Ohkubo 2,Kazuhiro Hono 2, Koki Takanashi 3 |
| ’ | 18 | 3D atom probe analysis of Au/CuNi junction with giant Peltier effect | Univ. of Tsukuba 1, NIMS 2, AIST 3, IMR Tohoku Univ. 4@Masaya Kodzuka 1, Tadakatsu Ohkubo 2, Atsushi Sugihara 3,4, Koki Takanashi 4, Kei Yakushiji 3, Akio Fukushima 3, Kazuhiro Hono2,1 |
| 19 | Calcination temperature and time dependence of magneto-conductive properties on La1-XSrXMnO3
ceramics | KonanUniv.1, Quantum Nanotechnology Laboratory.2, OsakaUniv.3, NRI-AIST.4@*Akinori Hoshino 1, Hiromi Kobori 1 2, Atsushi Yamasaki 1 2, Akira Sugimura 1 2
Toshifumi Taniguchi 3, Miyuki Tanaka 4, Yasuhisa Naitoh 4, Tetsuo Shimizu 4 |
| 10.2 Spintronics Devices, Circuits, and Measurements |
| March 18 9:00`12:00 |
| 18a-ZJ - 1`11 |
| 1 | Interlayer exchange coupling in FeB-based trilayers | AIST 1@T. Saruya 1, H. Kubota 1, S. Yakata 1, K. Noma 1, K. Yakushiji 1, A. Fukushima 1, S. Yuasa 1, and K. Ando 1 |
| 2 | Electronic structure of maghemite _gamma-Fe2O3 | Kansai Univ. 1, Nagoya Univ. 2, Tsukuba Univ. 3@Hiroyoshi Itoh 1, Syuta Honda 2, Jun-ichiro Inoue 2, Hideto Yanagihara 3, Eiji Kita 3 |
| 3 | Electron holography of CoFeB/Ru/CoFeB synthetic ferrimagnets | Advanced Research Lab. , Hitachi, Ltd. 1@*Akira Sugawara 1, K. Harada 1, M. Yamada 1, S. Heike 1, T. Hashizume 1, H. Takahashi 1 |
| 4 | Micromagnetic study on interactions between MFM probe and sample | Yamaguchi Univ. 1,Tokyo Univ. of Science Yamaguchi 2,MANA-NIMS 3,NIRC-AIST 4@Kubo Hidenori 1,A. S. Hazrina 1,Asada Hironori 1,Manago Takashi 2, Kuramochi Hiromi 3,Takano Fumiyoshi 4, Akinaga Hiroyuki 4 |
| 5 | Material study of magnetic coating on CNT-MFM probes | MANA-NIMS 1, Tokyo Univ. of Science Yamaguchi 2, Yamaguchi Univ. 3, NIRC-AIST 4@*Kuramochi Hiromi 1, Manago Takashi 2, Asada Hironori 3, Takano Fumiyoshi 4, Nakayama Tomonobu 1, Akinaga Hiroyuki 4 |
| 6 | Micro-magnetic Simulation of CNT-MFM Probes and Conventional Probes | Tokyo Univ. of Science Yamaguchi 2, Yamaguchi Univ. 1, MANA-NIMS 3, NIRC-AIST 4@Manago Takashi 1, Asada Hironori 2, Kuramochi Hiromi 3, Takano Fumiyoshi 4, Akinaga Hiroyuki 4 |
| | | Break 10:30`10:45 | |
| 7 | Magneto-optical Imaging of GMR Films with GdFe Free Layer | Nagaoka Univ. of Tech. 1, Japan Broadcasting Corp. 2@*Takayuki Ishibashi 1, Toshikiyo Kitanishi 1, Yuki Oshino 1, Kenichi Aoshima 2, Nobuhiko Funabashi 2, Kenji Machida 2, Kiyoshi Kuga 2, Naoki Shimidzu 2 |
| 8 | Analysis of magnetic domain structure for La0.7Sr0.3MnO3 polycrystalline films by two-dimensional vector magnetic field MFM | Akita Univ. 1, Nagoya Univ. 2, Southwest Univ. (China) 3@*Satoru Yoshimura 1, Genta Egawa 1, Zhenghua Li 1, Hitoshi Saito 1, Hidefumi Asano 2, Guoqing Li 3 |
| 9 | Diffraction from two-dimensional magentic garnet array and the magnetization characterization | Nagaoka Univ. of Tech.@*Emoto Akira 1, Kosaka Terumasa 1, Shioda Tatsutoshi 1, Ono Hiroshi 1, Ishibashi Takayuki 1 |
| 10 | Fabrication of a spin-filter device with Co ferrite | NIMS@Y.K. Takahashi, S. Kasai, T. Furubayashi, S. Mitani, K. Inomata, K. Hono |
| 11 | Preparation of perpendicular magnetic tunnel junction for submicron sized magneto-optical light modulation device
| Tokyo Denki Univ. 1, Science & Technical Research Laboratories, NHK 2@*Keiji Furukawa1, Kenji Machida2, Nobuhiko Funabashi2, Ken-ichi Aoshima2
Kiyoshi Kuga2,Kazuhiro Hara1, and Naoki Shimidzu2 |
| 10.2 Spintronics Devices, Circuits, and Measurements |
| March 19 9:00`18:15 |
| 19a-ZJ - 1`11 |
| ’ | 1 | Thermal stability and switching current density of ferromagnetically coupled CoFeB/Ru/CoFeB synthetic free layer | AIST-NeRI 1@*Yakata Satoshi 1,Kubota Hitoshi 1,Seki Takayuki 1,Yakushiji Kay 1,Fukushima Akio 1, Yuasa Shinji 1,Ando Koji 1 |
| 2 | Fabrication of TMR devices for evaluation of spin transfer switching properties in the sub-ns regime. | Tohoku Univ. 1@Tatsuya Aoki 1, Satoshi Yakata 1, Hiroshi Naganuma 1, Mikihiko Oogane 1, Yasuo Ando 1 |
| 3 | Spin transfer switching for MgO-based MTJs in the sub-ns regime. | Tohoku Univ. 1@Tatsuya Aoki 1, Yasuo Ando 1, Mikihiko Oogane 1, Hiroshi Naganuma 1 |
| ’ | 4 | Uni-polar current switching in magnetic tunnel junction by using spin torque | IIS Univ. of Tokyo1, INQIE Univ. of Tokyo 2@*Moriya Rai 1, Machida Tomoki1,2 |
| 5 | Spin Transfer Torque in Magnetic Tunnel Junctions by Keldysh approach | ARL, Hitachi Ltd.1 , AIST 2, IMR, Tohoku Univ. 3, JST-CREST 4@*Masahiko Ichimura 1,4, Tomoyuki Hamada 1,4, Horoshi Imamura 2, Saburo Takahashi 3,4, Sadamichi Maekawa 3,4 |
| 6 | Current-induced steady precessional mode in MTJs with the SyF free layer | ARL, Hitachi, Ltd. 1, IMR, Tohoku Univ. 2, JST, CREST 3@*Sugano Ryoko 1,3, Ichimura Masahiko 1,3, Takahashi Saburo 2,3, Maekawa Sadamichi 2,3 |
| | | Break 10:30`10:45 | |
| 7 | Hard axis field effect on the spin transfer switching in synthetic free layers | Tohoku Univ. 1, Fuji Electric Holdings Co., Ltd. 2@*Takuya Ono 1,2, Hiroshi Naganuma 1, Mikihiko Oogane 1, Yasuo Ando 1 |
| ’ | 8 | TMR properties and annealing stability in perpendicular MTJs with CoFe/Pd multilayer electrodes
| Tohoku Univ. 1, Hitachi ARL 2@*K Mizunuma 1, S Ikeda 1, H Yamamoto 2,1, H D Gan 1, K Miura 2,1, J Hayakawa 2, K Ito 2, F Matsukura 1, H Ohno 1
|
| 9 | High speed spin-transfer switching in perpendicular magnetization GMR device | Osaka Univ. 1, Toshiba Corporation R&D center 2@*Tomita Hiroyuki 1, Nozaki Takayuki 1, Seki Takeshi 1, Nagamine Toshihiko 2, Nishiyama Katsuya 2, Kitagawa Eiji 2, Yoshikawa Masatoshi 2, Daibou Tadaomi 2, Nagamine Makoto 2, Kishi Tatsuya 2, Ikegawa Sumio 2, Shimomura Naoharu 2, Yoda Hiroaki 2, Suzuki Yoshishige 1 |
| 10 | GMR film with Ag spacer and its CPP-GMR using perpendicular magnet | NHK STRL. 1, Nagaoka Univ. of Tech@*Kenichi Aoshima 1, Yuuki Oshino 2, Nobuhiko Funabashi 1, Kenji Machida 1, Kiyoshi Kuga 1, Takayuki Ishibashi 2, Naoki, Shimidzu 1 |
| 11 | Magneto-optical properties of CPP-GMR using Pt/Co multilayer with perpendicular anisotropy
| Nagaoka Univ. of Tecnology 1,Japan Broadcasting Corp.2,Tokyo Denki Univ.3@*Naganuma Masayuki 1,Ishibashi Takayuki 1,Machida Kenji 2,Furukawa Keiji 3,Aoshima Kenichi 2,Funabashi Nobuhiko 2,Kuga Kiyoshi 2,Shimidzu Naoki 2 |
| | | Lunch 12:00`13:00 | |
| 19p-ZJ - 1`20 |
| 1 | Current-induced domain wall motion in perpendicularly magnetized Co/Ni wires (3) | ICR Kyoto Univ.1, NEC Corp.2, Univ. of Electro-Communications3@Chiba Daichi1, Koyama Tomohiro, Yamada Gen1, Ueda Kohei1, Tanigawa Hironobu, Fukami Shunsuke2, Suzuki Tetsuhiro2, Ohshima Norikazu2, Ishiwata Nbuyuki2, Nakatani Yoshinobu3, Ono Teruo1
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| 2 | Magnetoresistive properties of magnetic tunnel junctions using perpendicularly magnetized MnGa epitaxial films | Tohoku Univ. WPI-AIMR 1, Tohoku Univ. 2@Watanabe Daisuke 1, Wu Feng 1, Mizukami Shigemi 1, Sajitha E. P. 1, Naganuma Hiroshi 2, Oogane Mikihiko 2, Ando Yasuo 2, Miyazaki Terunobu 1 |
| £ |
3 |
Giant tunneling magnetoresistance of 1056% at room temperature in double barrier magnetic tunnel junctions with MgO barrier
|
Tohoku Univ. 1@*Lixian Jiang 1, Hiroshi Naganuma 1, Mikihiko Oogane 1, and Yasuo Ando 1 |
| 4 | TMR properties and stack structures in double MgO barrier magnetic tunnel junctions with CoFeB layer | RIEC, Tohoku Univ. 1, ARL, Hitachi Ltd. 2, NIMS 3@Shoji Ikeda 1, Huadong Gan 1, Kotarou Mizunuma 1, Hiroyuki Yamamoto 2,1, Katsuya Miura 2,1, Jun Hayakawa 2, Fumihiro Matsukura 1, Tadakatsu Ohkubo 3, Kazuhiro Hono 3, Hideo Ohno 1 |
| 5 | Electric-field control of magnetic anisotropy in ultrathin FeCo/MgO/Fe junctions | Osaka Univ. 1,JST-PRESTO 2@Yoichi Shiota 1, Takayuki Nozaki 1,2, Teruya Shinjo 1, Masashi Shiraishi 1, Yoshishige Suzuki 1 |
| ’ | 6 | Tunnel Magnetoresistance in fully epitaxial Fe/MgAl2O4/Fe magnetic tunnel junctions | NIMS@H. Sukegawa, H. Xiu, T. Niizeki, W. H. Wang, S. Kasai, T. Furubayashi, T. Ohkubo, S. Mitani, K. Inomata and K. Hono |
| 7 | Preparation of a perpendicular-MgO-MTJ with low RA-product and high MR ratio | AIST 1@*Yakushiji Kay 1, Noma Kenjii 1, Kubota Hitoshi 1, Saruya Takeshi 1, Fukushima Akio 1, Nagahama Taro 1, Yuasa Shinji 1, Ando Koji 1 |
| 8 | Dielectric breakdown characteristics of oxidized Mg barrier Magnetic Tunnel Junctions (II) | Fujitsu Labs. 1, Fujitsu 2@Yoshida CHikako 1, Umehara Shinnjiro 2, Lee Young Min 1, Aoki Masaki 1, and Sugii Toshihiro 1 |
| 9 | Fabrication of synthetic ferrimagnet on an MgO tunnel barrier | AIST 1,Canon ANELVA 2@*Murooka Yuta 1,Kubota Hitoshi 1,Yakushiji Kay 1,Fukushima Akio 1,Yuasa Shinji 1,Ando Kouji 1,Maehara Hiroki 2,Nishimura Kazumasa 2,Tsunekawa Kouji 2,David D. Djayaprawira 2 |
| 10 | Electrical property of MTJs with an MgO barrier prepared using natural oxidation | AIST 1, Canon ANELVA 2@*Seki Takayuki 1, Fukushima Akio 1, Yakushiji Kay 1, Kubota Hitoshi 1, Yuasa Shinji 1, Ando Koji 1, Maehara Hiroki 2, Yamagata Shinji 2, Okuyama Hiroki 2, Tsunekawa Koji 2, David Djayaprawira 2 |
| | | Break 15:30`15:45 | |
| 11 | Fabrication of Fully Epitaxial Fe/Ag/MgO/Fe(001) Tunnel Junctions | NIMS 1@*Niizeki Tomohiko 1, Mitani Seiji 1 |
| 12 | Thermal Stability of MTJ stack with HDP-CVD SiN Protective Film | Device Platforms Res. Labs., NEC Corp.@*Hiroaki Utsumi, Katsumi Suemitsu, Keizo Kinoshita |
| £’ | 13 | Fabrication of Heusler-alloy-based magnetic tunnel junctions having an upper Co2MnSi electrode with various Mn compositions and having a Co50Fe50 lower electrode | Div. of Electronics for Informatics, Hokkaido Univ. 1@*Liu Hong-xi 1, Ishikawa Takayuki 1, Matsuda Ken-ichi 1, Uemura Tetsuya 1, Yamamoto Masafumi 1 |
| 14 | Evaluation of magnetic tunnel junctions with polycrystalline Co2Fe(Al,Si) electrodes | Corporate R&D Center Toshiba@*Ishikawa Mizue 1,Marukame Takao,Inokuchi Tomoaki,Sugiyama Hideyuki,Saito Yoshiaki |
| 15 | Fabrication of spin-transistor structure with Co2MnSi electrode | Tohoku Univ. 1@Yusuke Ohdaira 1, Mikihiko Oogane 1, Hiroshi Naganuma 1, Yasuo Ando 1 |
| 16 | Fabrication of magnetic tunnel junctions with L10-FePt/Co2MnSi hybrid electrode | Tohoku Univ. 1,Tohoku Univ. IMR 2@Hiratsuka Takashi 1,*Kim Gukcheon 1,Sakuraba Yuya 2,Kubota Takahide 1,Inami Nobuhito 1,Naganuma Hiroshi 1,Oogane Mikihiko 1,Takanashi Koki 2,Ando Yasuo 1 |
| 17 | First-principles study of ballistic conductance in Co2MnSi/MgO/Co2MnSi magnetic tunnel junction including spin-flip process | RIEC, Tohoku Univ.@*Yoshio Miura 1, Kazutaka Abe 1, Masafumi Shirai 1 |
| ’ | 18 | CPP-GMR devices with Co2FeAl0.5Si0.5 Huesler alloy | Univ. Tsukuba 1, NIMS 2@Nakatani Tomoya 1,2, Furubayashi Takao 2, Kasai Shinya 2, Sukegawa Hiroaki 2, Takahashi Yukiko 2, Mitani Seiji 2, Hono Kazuhiro 2,1 |
| ’ | 19 | Interfacial-structure dependence of TAMR effect and magnetic crystalline anisotropy in Co2MnSi/n-GaAs junctions
| Division of Electronics for Informatics, Hokkaido Univ.@*Harada Masanobu, Akiho Takafumi, Uemura Tetsuya, Matsuda Ken-ichi, Yamamoto Masafumi |
| ’ | 20 | Electric field effects of Magnetic anisotropy for ferromagnetic metal/dielectric film: from a first principles approach | Kanazawa Univ. 1, Touhoku Univ. 2@*Masahito Tsujikawa 1, Tatsuki Oda 1, Yoshio Miura 2, Masafumi Shirai 2
|
| 10.3 Magnetic Recording Media and Sensor |
| March 19 |
| 19a-ZA - 1`4 |
| |
Short Presentation (5 min.) 9:10`9:30
19a-ZA - 1`4@Poster Session 13:00`15:00 |
| 1 | Cr additional effects for magnetic properties CoPt Thin Films | Yamagata Univ 1,National Univ of Fine Arts and Music 2@*Ota Kouhei 1,Inaba Nobuyuki 1,Kirino Humiyoshi 2 |
| 2 | Microwave-assisted magnetization reversal using a perpendicularly magnetized film | Osaka Univ. 1,Fujitsu Ltd. 2@*Yoshioka Takashi 1,Nozaki Takayuki 1,Seki Takeshi 1,Shiraishi Masashi 1,Shinjo Teruya 1,Uehara Yuji 2,Suzuki Yoshishige 1 |
| 3 | Magnetic and Electronic Properties of (Co,Ru)Fe2O4 Thin Films | Univ. of Tokyo 1@*Fujiyuki Iwamoto 1, Munetoshi Seki 1, Hitoshi Tabata 1 |
| 4 | Carbon Nanotube Grown on Cr2O3 Thin Film | College of Science & Technology, Nihon University@*Yutaka Yonebayashi 1CKeisuke Makishima 1,
Daisuke Ishiduka 1CShummpei Otsuki 1CNobuyuki Iwata 1CHiroshi Yamamoto 1 |
| 10.4 Opto- and Quantum Spintronics |
| March 19 9:30`12:00 |
| 19a-ZA - 5`13 |
| 5 | Effects of Applied Electric Field on Electron Spin Relaxation Time in a (110)-Oriented GaAs/AlGaAs Multiple Quantum Well
| NAIST 1@Satoshi Iba 1, Shinji Koh 1, Hitoshi Kawaguchi 1 |
| 6 | Control of magnetization dynamics in ferrimagnetic GdFe thin films with two-pulse excitation | ISEL, Tokyo Institute of Technology 1, STRL, Japan Broadcasting Corp. 2@Nishibayashi Kazuhiro 1, Suda Keita 1, Kuga Kiyoshi 2, Hashimoto Yusuke 2, Munekata Hiro 1 |
| ’ | 7 | Observation of spin relaxation in InGaAs/GaAs single quantum well by time-resolved pump and probe reflectance measurement | Waseda Univ. 1, LPN-CNRS, France 2, SINANO-CAS 3@*Ushimi Takenori 1, Nosho Hidetaka 1, Asami Takeshi 1, Li Lianhe 2, Harmand Jean-Christophe 2, Lu Shulong 3, Tackeuchi Atsushi 1 |
| ’ | 8 | Measurement of spin relaxation time in InGaAs/AlAsSb quantum wells at 150 K | Waseda Univ. 1, AIST. 2@*Sasayama Kazutoshi 1, Gozu Shinichirou 2, Mozume Teruo 2, Izumi Soutaro 1, Saeki Yu 1, Nukui Takeo 1,Tackeuchi Atsushi 1 |
| | | Break 10:30`10:45 | |
| 9 | Spin relaxation in spin injection into self-assembled semiconductor quantum dots | Hokkaido Univ.1@*Tamura Norihiro 1,Yamazaki Tatsushiro 1,Sugawara Hirotake 1,Murayama Akihiro 1 |
| 10 | Formation time of magnetic polarons and electron-spin relaxation in diluted magnetic semiconductor quantum wells | Hokkaido Univ. 1@*Tatsushiro Yamazaki 1, Norihiro Tamura 1, Hirotake Sugawara 1, Akihiro Murayama 1 |
| 11 | Observation of the electron spin dynamics in Ga-doped and undoped ZnO epilayers | Univ. of Tsukuba 1,Stanley Electric Corporation 2@*Nozawa Shinsuke 1,Tomimoto Shinichi 1,Kato Hiroyuki 2,Sano Michihiro 2,Matsumoto Takahiro 2,Masumoto Yasuaki 1 |
| ’ | 12 | An experimental study of spin Hall effect in n-GaAs with various carrier concentration | RIEC, Tohoku Univ. 1@*Matsuzaka Shunichiro 1, Ohno Yuzo 1, Ohno Hideo 1 |
| ’ | 13 | Strain dependence of nuclear spin relaxation time in a semiconductor quantum well | RIEC Tohoku Univ.@Masaaki Ono 1, Genki Sato 1, Jun Ishihara 1, Shunichiro Matsuzaka 1, Yuzo Ohno 1, Hideo Ohno 1 |