| 9 Applied Material Science |
| 9.1 Dielectric Materials |
| Sept. 2 10:00`12:00 |
| 2a-B-@/ I |
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1 |
Development of Analysis Method for Ferroelectric Properties of Perovskite BaTiO3 |
Grad. Sch. Eng., Tohoku Univ.1, NICHe, Tohoku Univ.2@Xiao HonJun 1, Hirai Takashi 1, Suzuki Ai 2, Sahnoun Riadh 1, Koyama Michihisa 1, Tsuboi Hideyuki 1, Hatakeyama Nozomu 1, Endou Akira 1, Takaba Hiromitsu 1, Del Carpio Carlos 1, Kubo Momoji 1, Miyamoto Akira 1,2 |
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2 |
Crystallographic Phase Stabilities in Lead-free Piezoelectric Compound AgNbO3 by First-Principles Calculation |
Ryukoku Univ. 1@*Shigemi Akio 1, Wada Takahiro 1 |
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3 |
Observation of Mn Electronic state of Mn-Doped BaTiO3-BiFeO3 Ceramics Probed by Soft-X-Ray Absorption Spectroscopy |
Tokyo Univ. Sci. 1, Nagoya Univ. 2, LBNL 3@*Higuchi Tohru 1, Sakamoto Wataru 2, Itoh Naoyuki 2, Shimura Tetsuo 2, Yogo Toshinobu 2, Hattori Takeshi 1, Yi-Sheng Liu 3, Per-Anders Glans3, Jinghua Guo3 |
| ’ |
4 |
Raman Scattering Study on ABO3-type Ferroelectric Materials |
PAS, Univ. Tsukuba 1, JSPS 2@*Kato Kihiro 1, Tsukada Shinya 1,2, Kano Jun 1, Kojima Seiji 1 |
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Break 11:00`11:15 |
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5 |
Light Scattering and Structural Phase Transitions of the Relaxor Ferroelectrics |
PAS, Univ. Tsukuba 1, JSPS 2@Shinya Tsukada 1,2, Seiji Kojima 1 |
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6 |
Influence of growth and anneal conditions on electrical resistivity of La3Ta0.5Ga5.5O14 single crystals |
NAIST@*Ueda Yu 1 |
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7 |
Influence of the Ion Beam Irradiation on Polarization Inversion Characteristic of Stoicheiometric LiTaO3 single crystal |
RIEC.Tohoku Univ. 1@*Hatanaka Yuki 1,Hiranaga Yoshiomi 1,Cho Yasuo 1 |
| 9.1 Dielectric Materials |
| Sept. 2 13:15`16:30 |
| 2p-B-@/ I |
|
2 |
Fabrication of (Ba,Sr)TiO3 Thin Film on Sol-gel SiO2/Alumina Substrates and Their Properties |
NAIST 1@*Kawakami Yuuta 1,Tsuchikawa Takuya 1,Nozaka Takashi 1,Nishida Takashi 1,Takeda Hiroaki 1,Uchiyama Kiyoshi 1,Shiosaki Tadashi 1 |
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3 |
Composition and Temperature Dependence of Electric Properties of (Ba,Sr)TiO3 Thin Films |
Yokohama Denshi Seiko Co., Ltd. 1, Nara Institute of Science and Technology. 2@*Takashi Nozaka 1,2, Yoji Mizutani 1, Bhakdisongkhram Gun 1, Yuta Kawakami 2, Takashi Nishida 2, Hiroaki Takeda 2, Kiyoshi Uchiyama 2, Tadashi Shiosaki 2 |
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4 |
Analysis of nonlinear dielectric characteristics in (Ba,Sr)TiO3 film microwave tunable devices |
NAIST 1@Nishida Takashi 1, Nozaka Takashi 1, Echizen Masahiro 1, Kawakami Yuta 1, Takeda Hiroaki 1, Uchiyama Kiyoshi 1, Shiosaki Tadashi 1 |
| ’ |
5 |
Schottky Junction of (Ba, Sr)TiO3 and Metal Electrode and its Influence on the Tunability. |
Tokyo Tech. 1@Horiuchi Naohiro 1, Matsuo Takatoshi 1, Hoshina Takuya 1, Kakemoto Hirofumi 1, Tsurumi Takaaki 1 |
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6 |
Fabrication of atomically flat substrates for ferroelectric nano crystal growth |
NAIST 1@*Kouhei Nakamura 1,Koichi Kubo 1,Masahiro Echizen 1,Takasi Nishida 1,@
Hiroaki Takeda 1,Kiyoshi Uchiyama 1,Tadashi Shiosaki 1 |
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Break 14:30`14:45 |
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| ’ |
7 |
Giant polarization properties in BiFeO3 single crystals induced by defect engineering |
The Univ. of Tokyo 1, SORST-JST 2@*Chishima Yuji 1, Kitanaka Yuuki 1, Noguchi Yuji 1,2, Miyayama Masaru 1 |
|
8 |
Dependence of crystal structure and ferroeletric properties on composition of (Pb,Si)(ZryTi1-x-yNbx)O3(x=0.1`0.2) ferroelectric oxide |
Tokyo Univ.of Science 1@Idemoto Yasushi 1,*Mizoguchi Takuma 1,Kitamura Naoto 1 |
|
9 |
Material design and characterization of novel (Bi1/2Na1/2)TiO3-based ferroelectrics |
RCAST The Univ. of Tokyo 1, SORST-JST 2@*Oshima Yumiko 1, Noguchi Yuuji 1,2, Miyayama Masaru 1 |
|
10 |
Investigation of Aging Effect on Na0.5Bi0.5TiO3 |
PAS. Univ. of Tsukuba@Hidaka Yuki, Tsukada Shinya, Kano Jun, Kojima Seiji |
|
11 |
Properties of BaTiO3 ceramics prepared by spark plasma sintering (II) |
Shonan Inst. 1@*Maiwa Hiroshi 1 |
| ’ |
12 |
Fabrication of Three-Dimensional Photonic Crystal by Dielectric Spheres |
Tokyo Tech. 1@*Ayato Yuichi 1,Ohno Masaru 1,Hoshina Takuya 1,Tsurumi Takaaki 1 |
|
13 |
Radiation effects on dielectric layer on optics |
The Graduate School for the Creation of New Photonics Industries 1, JAST 2, ILT 3, JAXA 4@Fujita Kazuhisa 1, Suzuki Kazuyuki 2, Motokoshi Shinji 3, Kisara Katsuto 4 |
| 9.2 Fine Particles and Powders |
| Sept. 4 16:00`16:30 |
| 4p-H-@/ I |
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1`10@13:00`15:45i9.3 Nano electronicsj |
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Break 15:45`16:00 |
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11 |
Measurement of temperature in cooling process of Al2O3 prepared by Plused wire discharge |
Nagaoka Univ. of Tech. 1, Niigata Univ. 2@*Shikoda Yuu 1, Tokoi Yoshinori 2, Suzuki Tsuneo 1, Nakayama Tadachika 1, Suematsu Hisayki 1, Niihara Koichi 1 |
|
12 |
Experimental study for evaluation of electrophoretic migration in a non-aqueous liquid |
Tokai Univ1@*Hiroaki Karube1,Seisuke Abe1,Makoto Omodani1 |
| 9.3 Nano electronics |
| Sept. 4 9:00`15:45 |
| 4a-H-@/ I |
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1 |
Preparation of nanorings/nanoholes for nanotransistors |
Toyota Technological Inst. 1@Peng Xiaofeng 1, *Kamiya Itaru 1 |
| ’ |
2 |
Control of device properties of planar-type Si devices using SPM lithography |
Tokyo Univ. of Agr. & Tech. 1@*Nishimura Shinya 1, Eto Yuma 1, Miyashita Kazuya 1, Toyofuku Takashi 1, Shirakashi Jun-ichi 1
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| ’ |
3 |
SPM scratch nanolithography with applied bias voltage |
Tokyo Univ. of Agr. & Tech. 1@*Miyashita Kazuya 1, Nishimura Shinya 1, Toyofuku Takasi 1, Shirakashi Jun-ichi 1 |
| ’ |
4 |
Influence of feedback parameters on resistance control by feedback-controlled electromigration |
Tokyo Univ. of Agr. & Tech.@*Takahashi Keisuke, Itami Soichiro, Tomoda Yusuke, Shirakashi Jun-ichi |
| ’ |
5 |
Control of nanogaps by field-emission-induced electromigration |
Tokyo Univ. of Agr. & Tech. 1@*Hanada Michinobu 1, Tomoda Yusuke 1, Kume Watari 1, Takahashi Keisuke 1, Shirakashi Jun-ichi 1 |
| ’ |
6 |
Control of single-electron transistors fabricated by field-emission-induced electromigration |
Tokyo Univ. of Agr. & Tech. 1@*Kume Watari 1, Tomoda Yusuke 1, Hanada Michinobu 1, Takahashi Keisuke 1, Shirakashi Jun-ichi 1 |
| ’ |
7 |
Magnetoresistance properties of ferromagnetic nanogaps fabricated by electromigration method |
Tokyo Univ. of Agr. & Tech. 1@*Tomoda Yusuke, Takahashi Keisuke, Hanada Michinobu, Kume Watari, Itami Soichiro, Shirakashi Jun-ichi |
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Break 10:45`11:00 |
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| ’ |
8 |
Effect of gas molecules on resistance switching using a gold nanogap junction |
NRI-AIST 1, JST-PRESTO 2@Yasuhisa Naitoh 1 2, Masayo Horikawa 1, Tetsuo Shimizu 1 |
|
9 |
Dependence of Resistance switching effect using Nanogap Electrode on Impressed Voltage Level |
FEAT 1,NRI-AIST 2,@Masuda Yuichiro 1,Furuta Shigeo 1,Takahashi Tsuyoshi 1,Ono Masatoshi 1,Naitoh Yasuhisa 2,Shimizu Tetsuo 2,Horikawa Masayo 2, |
|
10 |
AFM investigations on structural changes after resistance switching in narrow thin metallic electrodes with a nanometer-scale gap |
Dept. of Electronic Sci. & Eng.,Kyoto Univ. 1,Innovative Collaboration Center,Kyoto Univ. 2,AIST 3@*Mizukami Takahiro 1,Miyato Yuji 1,Kobayashi Kei 2,Yamada Hirohumi 1,Matsushige Kazumi 1,Shimizu Tetsuo 3,Naitoh Yasuhisa 3 |
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11 |
Fabrication of ferromagnetic electrodes with atomic-scale gaps by feedback-controlled electromigration process |
IIS & INQIE, Univ. of Tokyo 1,CREST-JST 2@*Yoshida Kenji 1, Umeno Akinori 1,2, Sakata Syuuichi 1, Hirakawa Kazuhiko 1,2
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Lunch 12:00`13:00 |
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| 4p-H-@/ I |
|
1 |
Fabrication of MgO/ferrite Heterostructured Oxide Nanowire and Heterointerface Effect |
ISIR-Sanken Osaka Univ. 1@*Yanagida Takeshi 1, Marcu Aulerian 1, Nagashima Kazuki 1. Oka Keisuke 1, Tanaka Hidekazu 1, Kawai Tomoji 1 |
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2 |
Transport Properties of Individual Heterostructured Titanate Oxide Nanowire |
ISIR-Sanken Osaka Univ. 1@*Kazuki Nagashima 1, Takeshi Yanagida 1, Keisuke Oka 1, Masateru Taniguchi 1, Hidekazu Tanaka 1, Tomoji Kawai 1 |
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3 |
Transport Properties of Single MgO/NiO Core-shell heterostructured Nanowire |
ISIR-sanken Osaka Univ. 1@*Keisuke Oka 1, Takeshi Yanagida 1, Kazuki Nagashima 1, Hidekazu Tanaka 1, Tomoji Kawai 1 |
| ’ |
4 |
Lateral type phase-change memory with top heater for small-power consumption |
Gunma University 1@*Tomoyuki Noguchi 1,You Yin 1, Kazuhiro Ota 1, Hayato Sone 1, Sumio Hosaka 1 |
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5 |
Multiple-level storage of the lateral type phase-change memory with top heating layer |
Gunma University 1@You Yin 1, *Kazuhiro Ota 1, Tomoyuki Noguchi 1, Hayato Sone 1, Sumio Hosaka 1 |
| ’ |
6 |
ON state reliability of Solid-electrolyte Switch |
NEC 1,2, NIMS 3, JST 4@*Banno Naoki 1,4, Sakamoto Toshitsugu 1,4, Iguchi Noriyuki 2,4, Fujieda Shinji 2, Terabe Kazuya 3,4, Hasegawa Tsuyoshi 3,4, Aono Masakazu 3,4 |
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Break 14:30`14:45 |
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7 |
Investigation on Nanowire Network Conduction Control and Preservation for Realization of Reconfigurable BDD Logic Circuits |
Grad. School of Info. Sci. Tech. and RCIQE Hokkaido Univ 1, PRESTO JST 2@*Shiratori Yuta 1, A.R Shaharin Fazli 1, Nakata Daisuke 1, Kasai Seiya 1,2 |
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8 |
Fabrication Processes and Properties of Compound Semiconductor Self-Switching Diode |
Waseda Univ. 1, NTT BRL 2@*Komatsuzaki Yuji 1, Higashi Kazuhiro 1, Kyougoku Tomoteru 1, Onomitsu Kouji 2, Kawaharazuka Atsushi 1, Yamaguchi Hiroshi 2, Horikoshi Yoshiji 1 |
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9 |
Dynamic Characteristic of Gate-controlled Three-terminal GaAs Nanowire Junction Devices |
Grad. School of Info. Sci. Tech. Hokkaido Univ. 1,RCIQE 2,PREST JST 3@*Nakata Daisuke 1,2,A.R.Shaharin Fadzli 1,2,Shiratori Yuta 1,2,Kasai Seiya 1,2,3 |
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10 |
Observation of Stochastic Resonance in Schottky Wrap Gate GaAs-based Nanowire-FET Networks |
Graduate School of IST Hokkaido Univ. 1, RCIQE Hokkaido Univ. 2, PRESTO JST 3@Seiya Kasai 1,2,3, Tetsuya Asai 1 |
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11`12@16:00`16:30i9.2 Fine Particles and Powdersj |
| 9.4 Thermoelectric Energy Conversion |
| Sept. 3 10:15`17:30 |
| 3a-Y-@/ I |
|
1 |
Fabrication anf high temperature electron transport properties Sm-doped CaMnO3 epitaxial films |
Nagoya Univ. 1@*Akihiro Ishizaki 1, Kenji Sugiura 1, Hiromichi Ohta 1, Kunihito Koumoto 1 |
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2 |
Relationship between Jahn-Teller effect and Thermopower in Mn Oxide |
Cryogenic Research Center, Univ. of Tokyo 1, Department of Applied Physics, Univ. of Tokyo 2@*Takenori Fujii 1, Takuya Kubo 2, Satoshi Imamori 2, Atsushi Asamitsu 1,2 |
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3 |
High temperature thermoelectric properties of layered oxide Ca1.9-xBi0.1SrxMnO4 |
Grad. Sch. Eng. Tohoku Univ. 1@*Kawashima Fumiya 1, Hayashi Kei 1, Kajitani Tsuyoshi 1 |
| ’ |
4 |
Thermal Properties of Self-Assembled Nanostructure Oxide ZnGaMnO4 |
AIST 1@* Kosuga Atsuko 1, Funahashi Ryoji 1
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Break 11:15`11:30 |
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5 |
Thermal properties of Bi2Sr2-xLaxCaCu2O8+Β single crystals by modified Harman method |
Waseda U. 1,@*Yuto Horiuchi 1,Takenori Fujii 1,Ichiro Terasaki 1 |
| ’ |
6 |
Thermoelectric properties of rare earth and Bi doped Ca3-2xRExBixCo4OΒ(RE=Nd,Gd) |
Toyohashi Univ. of Tech.@Yamaji Masato 1,Nakamura Yuichi 1 |
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7 |
Effect of Sn doping on thermoelectric properties of n-type transparent semiconductor AgInO2 |
Sch. Eng. Tohoku Univ. 1, Grad. Sch. Eng. Tohoku Univ. 2@*Satoh Hironori 1, Igarashi Dai 2, Kajitani Tsuyoshi 2 |
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8 |
Seebeck coefficient of the TiO2/SrTiO3 heterostructure |
Nagoya Univ. 1@*Ohta Hiromichi 1,Kume Atsushi 1,Koumoto Kunihito 1 |
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Lunch 12:30`13:30 |
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| 3p-Y-@/ I |
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1 |
Superspace Group Approach to the Crystal Structure of Chimney-Ladder Compound MnSi\gamma (\gamma~ 1.74) |
Dept. Appl. Phys. Tohoku Univ. 1, IMR Tohoku Univ. 2@*Yuzuru Miyazaki 1, Dai Igarashi 1, Kei Hayashi 1, Kunio Yubuta 2, Tsuyoshi Kajitani 1 |
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2 |
Thermoelectric properties of Mg2Si thin films V |
Shimane Univ. 1@*Hiroyasu Toyohara 1, Yasuji Yamada 1, Shugo Kubo 1, Hiroyuki Kitagawa 1 |
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3 |
Electronic Structure and Thermoelectric Properties of Type-I Si-based Clathrate Compounds |
Tokyo Univ. of Science, Yamaguchi 1@*Kenji Koga 1, Masafumi Fukamoto 1, Koji Suzuki 1, Hiroaki Anno 1 |
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4 |
Low thermal-conductivity of a cagelike structure possessing material R3M4X13 and its thermal properties |
Dept. Crystalline Materials Science, Nagoya Univ. 1,EcoTopia Sci. Inst., Nagoya Univ. 2@*Kusashima Tatsuya 1, Takeuchi Tunehiro 2, Ikuta Hiroshi 1 |
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5 |
Anisotropic Seebeck coefficient in Zn13Sb10 compound |
JAIST 1@*Nakamoto Go 1, Kurisu Makio 1 |
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Break 14:45`15:00 |
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6 |
Fabrication and evaluation of figure of merit of Bi-Te microwires |
Japan Advanced Inst. of Science and Technology@Iwasaki Hideo 1, Matsunami Hiroyuki 1, Tokita Masaya 1 |
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7 |
Doping effects and thermoelectric properties of sintered SiC/Si system applied self cooling device |
Yokohama National University 1, National Defense Academy 2, Chubu University 3, Shimane University 4 @*Hiroshi. Nakatsugawa 1, Kensaku. Nagasawa 1, Hiroaki. Seki 1, Yoichi. Okamoto 2, Sataro. Yamaguchi 3, Shinji. Fukuda 3, Makoto. Hamabe 3, Hiroyuki. Kitagawa 4 |
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8 |
Seebeck coefficient in SOI structures |
Shizuoka Univ. 1@*Ikeda Hiroya 1, Faiz Salleh 1, Asai Kiyosumi 1 |
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9 |
Thermoelectric Properties of Amorphous Si/Au/Ge/Au - Dependence of Si and Ge Concentration - |
Dept. of MSE, NDA 1@*Takiguchi Hiroaki 1, Yoneda Toru 1, Okamoto Yoichi 1, Abe Makoto 1, Miyazaki Hisashi 1, Morimoto Jun 1 |
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10 |
Optimal Condition Search for Mechanically Fabricatuin of Si-Ge-B |
Dept. of MSE, NDA 1.@*Abe Makoto 1, Youichi Okamoto 1, Takiguchi Hiroaki 1, Miyazaki Hisasi 1, Morimoto Jun 1, |
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Break 16:15`16:30 |
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| ’ |
11 |
Anisotropic Thermoelectricity in Cu/Bi Tilted Multilayers |
ATRL, Matsushita Electric Industrial Co., Ltd.@*Kanno Tsutomu, Yotsuhashi Satoshi, Sakai Akihiro, Takahashi Kohei, Adachi Hideaki |
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12 |
Verification of thermal conductivity measurement of evaluation instrument using thermal probe |
Ulvac-Riko, Inc. 1, AIST 2@*Satoaki Ikeuchi 1, Kenji Shimada 1, Youichi Takasaki 1, Yoshikazu Ishii 1, Atsushi Yamamoto 2 |
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13 |
Performance of Peltier current lead installed in DC superconducting power transmission cable test stand |
Chubu Univ.1,Changwon National Univ.2@*Fujii Tomohiro 1,Sasaki Atsushi 1,Hamabe Makoto 1, Yamaguchi Satarou 1,KIM Arong 2,PARK Minwon 2 |
| ’ |
14 |
Study on the time-transient characteristics of a point-contact-type Peltier device |
Dept. of EEIE1 and HRC 2, Kanagawa Univ.@Anzai Toru 1, Yamaguchi Shigeo 1,2 |
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Lunch 12:00`13:00 |
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| 9.5 New Functional Materials and New Materials Science |
| Sept. 2 13:00`13:15 |
| 2p-B-@/ I |
|
1 |
Resistance switching and retention properties in polycrystalline La-doped SrTiO3 multilayered chip devices |
Murata Manufacturing Co., Ltd. 1@*Sakyo Hirose 1, Akinori Nakayama 1, Hideaki Niimi 1, Keisuke Kageyama 1, Hiroshi Takagi 1 |
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2`13@13:15`16:30i9.1 Dielectric Materialsj |
| 9.5 New Functional Materials and New Materials Science |
| Sept. 2 |
| 2p-P5-@/ I |
| |
Poster Session
2p-P5-1`9@15:30`17:30 |
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1 |
Hydroxyl radical scavenging properties of C12A7:H- and C12A7:e- |
FANCL Research Inst. 1,Tokyo Inst. of Technology 2@*Mogami Rie 1,Kon Tatsuya 1,Sakaguchi Hiroyuki 1,Hayashi Katsuro 2,Hirano Masahiro 2,Hosono Hideo2 |
| ’ |
2 |
Structure observation of electride C12A7:e- surface and gold nano-clusters by atomic resolution STM |
FCRC Tokyo Tech.@1, MSL Tokyo Tech. 2, IGSSE Tokyo Tech. 3@*Toda Yoshitake 1, Kamiya Toshio 2, Hirano Masahiro 1, Hirayama Hiroyuki 3, Hosono Hideo 1, 2, |
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3 |
Magnetic properties and ionic absorption of hollandite-type Ώ-MnO2 |
Saitama Univ. 1, KYOKUGEN Osaka Univ. 2, RIKEN 3@*Aida Makoto 1, Honda Zentaro 1, Saito Yuuki 1, Kamata Norihiko 1, Fukuda Takeshi 1, Hagiwara Masayuki 2, Katori Hiroko 3 |
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4 |
Synthesis and physical properties of the hollandite-type titanium oxides |
Okayama Univ. 1, JASRI/SPring-8 2, JST-CREST 3,@Muraoka Yuji 1 3, Noami Kengo 1, Wakita Takanori 1, Hirai Masaaki 1, Yokoya Takayoshi 1 3, Muro Takahiro 2, Tamenori Yusuke 2, |
| ’ |
5 |
High thermal conduction due to spins in Sr2CuO3 and SrCuO2 |
Nishina Center RIKEN 1, Eng. Tohoku Univ. 2, IMR Tohoku Univ. 3@*Takayuki Kawamata 1, Naoto Kaneko 2, Masanori Uesaka 2, Kazutaka Kudo 3, Norio Kobayashi 3, Yoji Koike 2 |
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6 |
Thermally Conductive Bioplastic Composites |
NEC Corporation , Nano electronics Research Labs. 1@*Makoto Soyama 1, Akinobu Nakamura 1, Masatoshi Iji 1 |
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7 |
Composite ceramic pressure sensor |
Okayama Univ. Grad. School of Natural Sci. and Tech. 1@*Kiminori Waku 1, Shunichi Kobayashi 1, Hidetaka Hayashi 1 , Akira Kishimoto 1 |
|
8 |
Microstructure and pore size analysis in hydrophilic and hydrophobic of carbon materials |
KRI Inc@*Takamasa Kaito, Shinsuke Ohyagi, Toshihiko Matsuda, Tatsuyoshi Sasaki |
|
9 |
Theoretical study of the hydrogen adsorption on Al doped graphene layer |
Kyoto Univ. 1@Fukushima Akinori 1, Senami masato 1, Tachibana Akitomo 1 |