| 8 Plasma Electronics |
| 8.1 Production and Control of Plasma |
| Sept. 2 14:00`18:00 |
| 2p-ZC-@/ I |
|
1 |
Simulations of Microwave Plasma Generation |
Tokyo Electron Technology Development Inst. 1@*Tian Caizhong 1, Ishibashi Kiyotaka 1, Nozawa Toshihisa 1 |
|
2 |
Large-Scaled Line Plasma Production by Microwave with Narrowed Rectangular Waveguide |
Tokai Univ. 1, 2@Yasuhito Kimura 1, Ryo Fujii 2, Kazuya Mikawa 2, Haruo Shindo 1, 2 |
|
3 |
Creation of Combinatorial Plasma Process Analyzer - Production and control of parameter-distributed plasmas - |
JWRI, Osaka Univ. 1, JST, CREST 2, Kyushu Univ. 3, Nagoya Univ. 4@Yuichi Setsuhara 1,2, Kosuke Takenaka 1,2, Masaharu Shiratani 2,3, Makoto Sekine 2,4, and Masaru Hori 2,4 |
|
4 |
Growth process of radio-frequency ICP plasma and sputtering behavior from antenna |
JAEA 1,Yamanashi Univ. 2,AIIT 3@*Yamauchi Toshihiko 1,Takemoto Ryou 2,Kanno Yoshinori 3,Kobayashi Seiji 1,Nakagaki Keita 2,Kato Hatsuhiro 2 |
|
5 |
Vdc scaling law of the small-bore discharge tube with an inserted coaxial cathode |
Toshiba PIC@*Hayashi Kazuo, Tanaka Motofumi, Yasui Hiroyuki, Hashimoto Kiyoshi |
|
6 |
Threshold of Inductively Coupled Plasma Production with Low Frequency Power |
Tokai Univ.@1,ULVAC Inc. 2@Y.Kitamura 1,K.Matsuishi 1,Y.Jinnbo 2,K.Kusaba 1,M.Kikuchi 2,H.Shindo 1 |
|
7 |
Estimation of electron density in atmospheric pressure RF CW plasma reactor |
Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka Univ. 1@*Yoshida Takashi 1,Yumii Takayoshi 1,Noriaki Kimura 1 |
|
8 |
Numerical analysis of atmospheric-pressure helium dc discharge plasmas using spatially two-dimensional fluid model |
Nagoya Inst. Technol. 1@Oda Akinori 1, Kimura Takashi 1 |
| |
|
Break 16:00`16:15 |
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| ’ |
9 |
Behavior of Nitrogen Radical by High Density Radical Source |
Nagoya Univ. 1, NU-Eco Eng. Co.,Ltd. 2, Katagiri Eng. Co.,Ltd. 3, Nagoya Plasma Center for Industrial Applications 4, JST-CREST 5@*S. Chen1,K. Kano2,S. Den3,S. Takashima4,K. Takeda1,M. Hori1,5 |
|
10 |
Millisecond Rapid Thermal Annealing of Si Wafer Surface Induced by High Density Thermal Plasma Jet Irradiation. |
Graduate School of AdSM, Hiroshima Univ.@*Furukawa Hirokazu 1, Higashi Seiichiro 1, Okada Tatsuya 1, Murakami Hideki 1, Miyazaki Seiichi 1. |
| ’ |
11 |
Deposition of amorphous carbon films using high-density nonequilibrium atmospheric pressure remote plasma |
Nagoya Univ. 1, NU-EcoEng. 2, JST-CREST 3@*Matsudaira Yuto 1, Inui Hirotoshi 1, Kano Hiroyuki 2, Hori Masaru 1,3 |
| ’ |
12 |
External Optical Control of a Coplanar Barrier Discharge |
Yamanashi Univ 1@*Kubota Satoru 1, Sakurai Takeki 1 |
|
13 |
Characteristic of the Rare Gas Atmospheric Pressure Micro Plasma Jet |
Yamanashi Univ. 1@*Kasai Hiroyuki 1, Sakurai Takeki 1 |
|
14 |
Effects of Metastable Species in Ar or He Plasmas on Aqueous Solutions |
ICC Kyoto Univ 1, GSE Kyoto Univ 2@*Shirafuji Tatsuru 1, Morita Tadasuke 2, Tachibana Kunihide 2 |
| ’ |
15 |
Creation and Applications of Stable Gas-Liquid Interfaced Plasma Reactive Filed Using Ionic Liquids |
Tohoku Univ.1@*Baba Kazuhiko1, Kaneko Toshiro1, Hatakeyama Rikizo1 |
| 8.1 Production and Control of Plasma |
Sept. 4 9:00`12:00 |
| 4a-Y-@/ I |
|
1 |
Dynamical characteristics of low-frequency nonequilibrium atmospheric micro plasma jets IV |
Osaka Univ. 1@*Katsuhisa Kitano 1,Satoshi Hamaguchi 1 |
|
2 |
Influence of Substrate on Spatiotemporal Behavior of Low-temperature Plasma Jet at Atmospheric Pressure |
Kyoto Univ. 1@*Keiichiro Urabe 1, Yosuke Ito 1, and Kunihide Tachibana 1 |
| ’ |
3 |
Time-resolved measurement of Ar metastable atom density and N2 emission intensity in Ar atmospheric pressure plasma jet |
Ehime Univ. 1@*Nagahama Taichi 1,Okayama Susumu 1,Motomura Hideki 1,Jinno masafumi 1 |
| ’ |
4 |
Surface modification processes on organic material employing nonequilibrium atmospheric pressure remote plasma |
Nagoya Univ. 1,SEKISUI CHEMICAL CO., Ltd. 2,JST-CREST 3@*Hirotoshi Inui 1, Yuto Matsudaira 1, Takuya Yara 2, Tsuyoshi Uehara 2, Masaru Hori 1,3 |
| ’ |
5 |
Mechanism for degradation of TFT electrical characteristics caused by
atmospheric plasma irradiation(2) |
Institute of Fluid Science, Tohoku Univ.1, Sekisui Chemical Co.,Ltd.2, NAIST3@*Taiki Sato 1, Takuya Yara 2, Eiji Miyamoto 2, Yukiharu Uraoka 3, and Seiji Samukawa 1 |
|
6 |
Determination of Nitrogen Atom Density in the Afterglow of Atmospheric Pressure Nitrogen discharge |
Mitsubishi Electric Corp. 1, TMEIC 2@*Oinuma Gaku 1, Inanaga Yasutaka 1, Tanimura Yasuhiro 1, Watanabe Kensuke 2, Tabata Yoichiro 2 |
|
7 |
Gas temperature dependent generation and diagnosis of atmospheric cryo plasma (4 `296 K) |
University of Tokyo, Graduate School of Frontier Sciences@*Yuri Noma, Jai Hyuk Choi, Sven Stauss, Takaaki Tomai and Kazuo Terashima |
| |
|
Break 10:45`11:00 |
|
|
8 |
Invited Lecture: To understand the new by exploring the old of Plasma Electronics |
Chubu Univ. 1@Goto Toshio 1 |
|
9 |
Invited Lecture: The Sense of Wonder in Dielectric Barrier Discharges |
Prof. Emeritus Sophia Univ.@*Okazaki Satiko |
| 8.2 Plasma Diagnostics |
| Sept. 4 |
| 4a-A-@/ I |
| |
Short Presentation (5min.) 9:40`12:00
4a-A-1`25@Poster Session 15:30`17:30 |
| ’ |
1 |
Electron Temperature and Density Estimations in Ar DC Glow Discharge by optical Diagnostics |
Osaka Univ.@*Tamura Tomoya, Ito Tsuyohito, Hamaguchi Satoshi |
| ’ |
2 |
Electric Field Measurements in High-pressure Hydrogen Discharges by Coherent Raman Scattering |
Osaka Univ. 1, Ruhr-Univ. Bohum 2@Tsuyohito Ito 1, Kazunobu Kobayashi 1, Uwe Czarnetzki 2, Satoshi Hamaguchi 1 |
| ’ |
3 |
Measurement of N atom density in ICP N2 plasmas by VUV absorption spectroscopy -Comparison with N2(A3\Sigmau+) density- |
Nagoya Univ. 1, Toshiba Corp. R&D Center 2@*Yoshimine Horikawa 1, Kazuaki Kurihara 2, Koichi Sasaki 1 |
|
4 |
Investigation of ArI atomic density in the Facing Target Sputtering System by Laser spectroscopy |
Tokyo Polytechnic Univ.@*Yasuda Youji, Nishimiya Nobuo, Suzuki Masao, Hoshi Youichi |
|
5 |
Measurement of Multiphoton Ionization Efficiency in the Focal Region of Nd:YAG Laser Used for Thomson Scattering Diagnostics |
Nagoya Univ. 1@*Keiichi Fukuyama 1,Aramaki Mitsutoshi 1, Kono Akihiro 1 |
|
6 |
Measurement of Electrode Temperature of Fluorescent Lamp and Characteristics of Ba Atom loss from Electrode (II) |
Kyushu Univ. 1, Matsushita Lighting Company 2@*Yukihiko Yamagata 1, Masaru Naka 1, Yuichi Egashira 1, Kentaro Tomita 1, Kiichiro Uchino 1, Takashi Ueda 2, Yoshio Manabe 2 |
| £’ |
7 |
Effects of Magnetic Field on Electron Energy Distribution in Multi-Hollow Discharges |
Kyushu University, Department of Electronics@William M. Nakamura, Yuuki Kawashima, Masatoshi Tanaka, Hiroshi Sato, Hiroomi Miyahara, Hidefumi Matsuzaki, Kazunori Koga, and Masaharu Shiratani |
|
8 |
Plasma Density Measurement of Microwave Excited Plasma in Liquid Using Stark Broadening |
Nagoya Univ. 1@Toyoda Hirotaka 1,Sugiura Hiroyasu 1,Saito Ryota 1,Ishijima Tatsuo 1 |
|
9 |
Probe measurements and optical emission spectroscopy in inductively coupled Ar/N2 plasmas. |
Nagoya Institute of Technology 1@Hiroki Kasugai 1, *Takashi Kimura 1 |
|
10 |
Measurement of Atomic Hydrogen Density in CH4/H2-ICP Using Actinometry |
Fac. of Eng. 1, School of Sci. & Technol. 2, Nagasaki Univ.@*Yoshinobu Matsuda 1, Kosuke Tamoto 1, Kazuishi Uehara 2, Masanori Shinohara 1 |
| ’ |
11 |
Observation of transport of nano-particles using pulse RF discharges with amplitude modulation |
Kyushu Univ. 1, ASM Japan 2@*Iwashita Shinya 1, Miyata Hiroshi 1, Matsuzaki Hidefumi 1, Koga Kazunori 1, Shiratani Masaharu 1, Morisada Yoshinori 2, Matsuki Nobuo 2, Ikeda Shingo 2 |
|
12 |
Analysis of dust particles collected in LHD I |
Kyushu Univ. 1, NIFS 2@*Iwashita Shinya 1, Koga Kazunori 1, Shiratani Masaharu 1, Ashikawa Naoko 2, Nishimura Kiyohiko 2, Sagara Akio 2 |
| ’ |
13 |
Theoretical Explanation of Etching Rate in Plasma using Simplified Langmuir-Hinshelwood Model |
Selete. Inc. 1@Takehisa Iwakoshi 1, Takayuki Aoyama 1, Yasuo Nara 1, Yuzuru Ohji 1 |
| |
|
Break 10:45`11:00 |
|
| ’ |
14 |
Dependence of power, pressure and excitation frequency of IED in reactive plasma |
Nagoya Univ. 1,ULVAC 2@Obuchi Hokuto1,Muranaka Tomoaki1,Hayashi Toshio1,Kono Akihiro1,Aramaki Mitutoshi1,Mizutani Naoki2,Ishikawa Michio2 |
| ’ |
15 |
Negative ion measurement generated on sputtered dielectric substrate |
Nagoya Univ. 1, ULVAC 2@Muranaka Tomoaki 1, Obuchi Hokuto 1, Hayashi Toshio 1, Kono Akihiro 1, Aramaki Mitutoshi 1, Mizutani Naoki 2, Ishikawa Michio 2 |
|
16 |
Accuracy improvement of electron density measurements with frequency shift probe |
Chubu Univ.1@*Zhang Qi 1, K. Nakamura 1, H.Sugai 1 |
|
17 |
Probe measurement of DC atmospheric pressure plasma in Argon and air |
Osaka Pref. Univ. 1@Matsuura Hiroto 1,Kiriishi Taku 1,Nakano Ken 1 |
|
18 |
Electron Temperature Real Time Measurement in RF Plasma by Floating Emissive Probe Method |
Tokai Univ. 1,@Kusaba Kota 1,Satoh Syuhei 1,Ishihara Kazuya 1,Shindo Haruo 1, |
|
19 |
Gas analysis for ammonia plasmas using a quartz sensor |
AIST, RIIF, Atsushi Suzuki, Hidehiko Nonaka@*Atsushi Suzuki, Hidehiko Nonaka |
|
20 |
Plasma-damage prediction system with combination of on-wafer monitoring and neural network modeling (III) |
Tohoku Univ. 1, Miyagi Oki Electric Co. 2@*Hiroto Ohtake 1, Jun Hashimoto 2, Ikuo Kurachi 2, Seiji Samukawa 1 |
| ’ |
21 |
Monitoring of absolute densities of metallic atoms using multi-micro hollow cathode light source in a sputtering process for forming of IZO film |
Wakayama Univ 1, NU System CO., LTD. 2, NU EcoEng CO., LTD. 3, Katagiri Eng CO., LTD. 4, Nagoya Univ 5@*Takota Naoki 1, Ohta Takayuki 1, Ito Masafumi 1, Higashijima Yasuhiro 2, Kano Hiroyuki 3, Den Shoji 4, Hori Masaru 5 |
|
22 |
Observation of Arcing in Magnetron Sputtering Using Al-doped ZnO Target |
School of Sci. & Technol. 1, Fac. of Eng. 2, Nagasaki Univ. @Kazuki Komine 1, Taichi Sakamoto 1, Tadashi Iwata 1, Ryoji Kan 1, Takashi Shibasaki 1, Masanori Shinohara 2, *Yoshinobu Matsuda 2 |
|
23 |
Acceleration of a Cold Argon Arc Jet Plasma Flowing along Open-Field-Line (2) 2-D Measurement of Velocity and Potential |
Tokyo Tech., Dept. Energy Sci. 1, Tokyo Tech., Res. Lab. Nucl. Reactors 2@Nagahara Yoh 1, Yoshida Kazuyuki 1, Shibata Tomohiko 1, Matsuura Haruaki 2, Nezu Atsushi 2, *Akatsuka Hiroshi 1,2 |
|
24 |
Interaction between Solution Plasma and alkaline metallic ions |
Department of Material Science and Engineering, Nagoya Univ. 1, EcoTopia Science Inst., Nagoya Univ. 2, CREST/JST 3@*Norihiro Fujikawa 1, Nagahiro Saito 1,3, Osamu Takai 2,3 |
|
25 |
Analysis of solution plasma reaction in lower alcohol-water system |
Nagoya Univ. 1, JST-CREST 2, EcoTopia, Nagoya Univ. 3@Mori Takaaki 1, Saito Nagahiro 1,2, Takai Osamu 1,2,3 |
| 8.3 Plasma Deposition and Surface Treatment |
| Sept. 4 14:00`17:00 |
| 4p-ZF-@/ I |
| ’ |
1 |
Effect of H2O Addition on Surface Modification of PET Film by High Density Microwave Plasma |
Nagoya Univ. 1, Toyobo Co. Ltd 2, Chubu Univ. 3@*Yuichi Gunjo 1, Hirotaka Toyoda 1, Kiyoshi Iseki 2, Hideo Sugai 3 |
| ’ |
2 |
Uniform Surface Modification of Cylindrical Polymer by Surface Wave Plasma |
Nagoya Univ. 1, Tokai Rubbers Industries, LTD. 2, Chubu Univ. 3@*Ishikawa Kyosuke 1, Ishijima Tatsuo 1, Toyoda Hirotaka 1, Sasai Kensuke 2, Sugai Hideo 3 |
| ’ |
3 |
Improvement of metallic adhesion of polymer surface using surface-wave plasma |
Shizuoka Univ.@Anzawa Eiki 1, Noguchi Suguru 1, Kral Martin 2, Ogino Akihisa 2, Nagatsu Masaaki 2 |
| ’ |
4 |
Immobilization of Heparin on Polymer Surface by Surface-wave Plasma Treatment |
Shizuoka Univ.@Noguchi Suguru 1, Kral Martin 2, Ogino Akihisa 3, Nagatsu Masaaki 3 |
|
5 |
Surface modification by using nitrogen atmospheric plasma jet |
Toyota Tech. Inst. 1@Kubota Yuusuke 1, Ichiki Ryuta 1, Kuroyanagi Eri 1, Ikeda Takayuki 1, Yamamoto Akiko 1, Hara Tamio 1 |
| |
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Break 15:15`15:30 |
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|
6 |
Low-damage process of polymers using ICPs sustained with Multiple Low-Inductance Antenna Modules |
JWRI, Osaka Univ. 1, JST, CREST 2, EMD Corp. 3, CAPST, Sungkyunkwan Univ. 4@Kosuke Takenaka 1,2, Ken Cho 1, Yuichi Setsuhara 1,2, Akinori Ebe 3, Jeon G. Han 4 |
|
7 |
Hard X-ray photoelectron spectroscopy for nano-surface damage analysis of polymers exposed to plasmas |
JWRI, Osaka Univ. 1, JST, CREST 2, Nagoya Univ. 3, JASRI/SPring-8 4@Ken Cho 1, Kosuke Takenaka 1,2,Yuichi Setsuhara 1,2, Hiroki Kondo 3, Osamu Nakatsuka 3, Eiji Ikenaga 4 and Shigeaki Zaima 3 |
|
8 |
Relations between ion dose and gas barrier characteristic with ion implantation modification of polymer |
Kanazawa Inst of Tech@*Ikeda Fumiya 1,Nakayama yosuke 1,Inui Toshiaki 1,Ikenaga Noriaki 1,Sakudo Noriyuki 1 |
| ’ |
9 |
The laser measurement of TTIP solution for atmospheric pressure plasma jet |
Graduate School of Engineering, Chubu Univ.@*Hayakawa Masahiro, Parajulee Shankar, Shunjiro Ikezawa |
| ’ |
10 |
Low temperature and high rate reduction of GeO2 on glass substrate by high pressure hydrogen plasma. |
Osaka Univ. 1,Osaka Univ. 2,Osaka Univ. 3,Osaka Univ. 4,Osaka Univ. 5@*Mori Tetsuya 1,Goto Akihiro 2,Ohmi Hiromasa 3,Kakiuchi Hiroaki 4,Yasutake Kiyoshi 5 |
|
11 |
Annealing Effect on Photoluminescence from Oxidized a-Si:H Nanoball Films [II] |
Waseda Univ.@*Tonomi Masaru 1 |
| 8.3 Plasma Deposition and Surface Treatment |
| Sept. 5 9:00`11:45 |
| 5a-ZF-@/ I |
|
1 |
Current-Voltage characteristics of impulse magnetron sputtering with different pulse-off bias voltages |
Seikei Univ. 1@Takeo Nakano 1, Chieko Murata 1, Shigeru Baba 1 |
|
2 |
Measurement of the H atom density in RF magnetron sputtering plasmas with Ar-H2 mixture gas by LIF |
Nagoya Univ. 1, Ruhr-Univ. 2@Fukaya Kota 1,Tabata Akimori 1, Sasaki Koichi 2, Knake Nikolas 3 |
|
3 |
Deposition Mechanism of Electrical Discharge Coating -MSCoating- |
IHI 1@*Satoshi Kurita 1, Masato Ishizaki 1, Nobuhiko Yunoki 1, Sadao Nishikiori 1, Hiroyuki Ochiai 1 |
|
4 |
Fabrication of Metal and Ceramic Coating by Atmospheric Pressure Microwave Plasma Spraying |
Toyohashi University of Technology 1@*Tsujimoto Katsuhiro 1,Yasui Toshiaki 1,Fukumoto Masahiro 1 |
|
5 |
Removal of Cutting Oil from Metal Substrate by Using Atmospheric Meso-Plasma |
Toyohashi Univ. Technol. 1, Daiken Chemical Co., Ltd. 2, Kurita Seisakusho Co., Ltd. 3@Haruki Saito 1, Hajime Shiki 1, Shinichiro Oke 1, Yoshiyuki Suda 1, Hirofumi Takikawa 1, Takashi Okawa 2, Shigenobu Yamanaka 2, Shigeji Hishida 3, Yoshimi Nishimura 3 |
| |
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Break 10:15`10:30 |
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6 |
Low-Contamination Surface Treatment by Atmospheric Meso-Plasma with Graphite Electrode |
Toyohashi Univ. Technol. 1, Daiken Chemical Co., Ltd. 2, Kurita Seisakusho Co., Ltd. 3@*Shiki Hajime 1, Saito Haruki 1, Oke Shinichiro 1, Suda Yoshiyuki 1, Takikawa Hirofumi 1, Takashi Okawa 2, Yamanaka Shigenobu 2, Hishida Shigeji 3, Nishimura Yoshimi 3 |
|
7 |
Atomospheric chemical vapor deposition of SiOC thin film on plastic substrate |
Dai Nippon Printing Co., Ltd. @Yamada Marii |
|
8 |
Dependence on the kinds of substrates for the CVD of SiO2 films by low-temperature plasma jet at atmospheric pressure |
Kyoto Univ. 1@*Ito Yosuke 1, Urabe Keiichiro 1, Takano Nobuhiko 1, Tachibana Kunihide 1 |
|
9 |
Advanced endpoint detection tool of NF3 remote plasma cleaning |
Renesas Technology Corp.1,Mitsubishi Electric Corp.2@*Hanazaki Minoru 1, Fujii Kazuyuki 1, Kawaharada Gen 1,Taki Masakazu 2,
Tuda Mutumi 2 |
|
10 |
The ordinary temperature Molecular Layer Depositing method using BTBAS |
Univ of Yamanashi. 1, Tokyo Electron Ltd. 2@*Tamekuni Takahiro 1, Shibata Masami 1, Nisimura Eiichi 2,Shimizu Akitaka 2,Hasebe kazuhide 2 |
| 8.4 Plasma Etching |
| Sept. 3 9:45`13:00 |
| 3a-ZC-@/ I |
|
1 |
Effect of Etching Plasma on Gate LER Formation |
Miyagi OKI 1@*Atsushi Yabata 1,Tokio Shino 1,Jun Hashimoto 1,Naoya Kuriyama 1 |
|
2 |
Frequency dependence of Silicon Etching by the RF Surface Wave Plasma |
Tokai Univ. 1,2,3,NIHON KOSYUHA Co. 4@*Nakazaki Yoshiaki 1,Kusaba Kota 2,4,Koike Jun 3,Hattori Takaaki 3,Shindo Haruo 1,2,3 |
|
3 |
Development of High Rate Process in Si Deep etching by NLD plasma |
ULVAC.Inst.Semi.tech. 1@*Murayama Takahide 1,Morikawa Yasuhiro 1,Suu koukou 1 |
| ’ |
4 |
Silicon Etching using Atmospheric Pressure Surface Discharge |
Dept. of Eng. Univ. of Miyazaki 1, Interdisciplinary Graduate School of Agriculture and Eng. Univ. of Miyazaki 2, Dept. of Electrical and Electronic Eng. Univ. of Miyazaki 3@*Hirayama Ryota 1, Hamada Toshiyuki 2 , Sakoda Tastuya 3 , Otubo Masahisa 3 |
| ’ |
5 |
Influence of Via Sidewall on Etch Rate in High Rate Silicon Etching |
Toshiba Corp. 1@*Sakurai Noriko 1,Sakai Itsuko 1,Ohiwa Tokuhisa 1 |
| ’ |
6 |
Effects of Photon Irradiation to ArF Resist during Plasma Etching Processes (2) |
Tohoku Univ. 1@*Koji Koyama 1, Butsurin Jinnai 1, Seiji Samukawa 1 |
| |
|
Break 11:15`11:30 |
|
| ’ |
7 |
Development of simulator for the analysis of plasma-surface interaction (1): Si etching by Br+-containing plasmas |
Kyoto Univ. 1@*Tatsuya Nagaoka 1,Akira Iwakawa 1,Hiroaki Ohta 1,Koji Eriguchi 1,Kouichi Ono 1 |
| ’ |
8 |
Development of simulator for the analysis of plasma-surface interaction (2): simulations with high neutral-to-ion flux ratios |
Kyoto Univ. 1@*IWAKAWA Akira 1, NAGAOKA Tatsuya 1, OHTA Hiroaki 1, ERIGUCHI Koji 1, ONO Kouichi 1 |
|
9 |
Atomic-scale cellular model and profile simulation of Si etching: Analysis of particle trajectory and surface oxidation |
Grad. School of Eng., Kyoto Univ. 1@*Hirotaka Tsuda 1, Masahito Mori 1, Hiroaki Ohta 1, Koji Eriguchi 1, and Kouichi Ono 1 |
| ’ |
10 |
Analysis of plasma-surface interactions during etching of high-k dielectric HfO2 films in BCl3-containing plasmas |
Grad. School of Eng., Kyoto Univ. 1@*Ueda Yoshinori 1, Nakamura Keisuke 1, Kiyokami Hiroaki 1, Ohta Hiroaki 1, Eriguchi Koji 1, Ono Kouichi 1 |
| ’ |
11 |
Effects of O2 addition on defect generation process within Si surface region exposed to Ar plasma |
Kyoto Univ.@*Nakakubo Yoshinori, Matsuda Asahiko, Ueda Yoshinori, Ohta Hiroaki, Eriguchi Koji, Ono Kouichi |
|
12 |
Synergy Effect of Argon Plasma Particle Radiation and Ultraviolet Radiation on GaN Etching Damage |
Tokushima University 1, Nichia Corporation 2@*Kawakami Retsuo 1, Inaoka Takeshi 1, Tominaga Kikuo 1, Mukai Takashi 2
|
| 8.4 Plasma Etching |
| Sept. 4 13:00`17:45 |
| 4p-D-@/ I |
|
1 |
JJAP Paper Award: Influences and Role of Irradiated UV Photons during Plasma Etching Processes |
1 Tohoku University, 2 Ushio Inc.@Seiji Samukawa1, Butsurinn Jinnai1, Fumihiko Oda2, and Yukihiro Morimoto2 |
|
2 |
Surface Temperature Monitor for Silicon Wafer Etching Process |
AIST 1@*Yamada Yoshiro 1, Ito Kyoko 1, Ishii Juntaro 1 |
| ’ |
3 |
Controlling Plasma Etching Processes on Measuring Substrate Temperature Using the Low-coherence Interferometer |
Nagoya Univ. 1, Wakayama Univ. 2, JST-CREST 3@Hiroki Kuroda 1, Hiroshi Yamamoto 1, Masafumi Ito 2, Takayuki Ohta 2,Makoto Sekine 1,3, Masaru Hori 1,3 |
|
4 |
Surface loss probability of nitrogen radicals in process plasmas |
Plasma Center for Industrial Applications, Nagoya Urban Industries Promotion Corp. 1, Nagoya Univ. 2, JST-CREST 3@S. Takashima 1, K. Takeda 2, M. Hori 2,3 |
| ’ |
5 |
Surface loss probability measurements of H and N radicals in H2/N2 plasma discharge |
Nagoya Univ. 1, Plasma Center for Industrial Applications, Nagoya Urban Industries Promotion Corp. 2, Osaka Univ. 3, Kyushu Univ. 4, JST-CREST 5@*Chang S. Moon 1, K. Takeda 1, S. Takashima 2, M. Sekine 1, 5, Y. Setsuhara 3, 5, M. Shiratani 4, 5, and M. Hori 1, 5 |
| ’ |
6 |
Low-k Film Fast Etching Process Employing New Fluorocarbon Gases for De-Global Warming (II) |
Nagoya Univ. 1, JST-CREST 2, Asahi Glass Corp. 3@*Shibata Emi 1, Okamoto Hidekazu 3, Sekine Makoto 1,2, Hori Masaru 1,2 |
| ’ |
7 |
Damages on Low-k films due to VUV, UV radiation, radical and ion in dual frequency capacitively coupled plasma (VI) |
Nagoya Univ. 1,Sony Corp. 2,JST-CREST 3@*Miyawaki Yudai 1,Saito Ryota 1,Uchida Saburo 1,Fukasawa Masanaga 2,Oshima Keiji 2,Nagahata Kazunori 2,Tatsumi Tetsuya 2,Takashima Seigo 1,Takeda Keigo 1,Sekine Makoto 1,3,Hori Masaru 1,3 |
|
8 |
Evaluating damage generation mechanism in porous SiOCH low-k film during ashing process (II) |
Nagoya Univ. 1, JST-CREST 2@*Yamamoto Hiroshi 1, Takeda Keigo 1, Sekine Makoto 1,2, Hori Masaru 1,2 |
| |
|
Break 15:15`15:30 |
|
|
9 |
Ashing of some types of resist using high purity ozone gas |
Meidensha Corp. 1, Kanazawa Inst. of Technology 2@*Toshinori Miura 1, Mitsuru Kekura 1, Hideo Horibe 2, Masasi Yamamoto 2 |
|
10 |
Production and dissociation reaction of NxHy compounds in N2+H2 reactive plasma |
Nagoya Univ.1, ULVAC Inc.2@*Hayashi Toshio1, Hori Masaru1, Kono Akihiro1,Higuchi Yasushi2, Ishikawa Michio2 |
|
11 |
Chemical reaction in reactive plasma; (1) dissociation reaction by electron attachment |
Nagoya Univ. 1, ULVAC 2@*Hayashi Toshio 1, Kono Akihiro 1, Ishikawa Michio 2 |
|
12 |
Chemical reaction in reactive plasma; (2) radical and ion reaction |
Nagoya Univ. 1, ULVAC 2@*Hayashi Toshio 1, Kono Akihiro 1, Ishikawa Michio 2 |
|
13 |
High-rate SiO2 etching using atmospheric-pressure microplasma jet |
School of Eng. Univ. of Tokyo 1, CNBI Univ. of Tokyo 2@*Sugi Yuhei 1, Itiki takanori 1,2 |
|
14 |
Deterioration mechanism of ceramics wall surfaces by irradiation of reactive plasmas |
Nagoya Univ. 1, Plasma Nano RC. 2@*Kazuhiro Miwa 1, Noriharu Takada 1, Koichi Sasaki 2 |
|
15 |
Evaluation of electrical conductivity of deposited polymer in contact etching using On-Wafer Monitoring Sensor (II) |
Miyagi OKI 1,OKI 2,Tohoku Univ. 3@*Kawada Shinji 1,Yatagai Youichi 1,Hashimoto Jun 1,Kuriyama Naoya 1,Kurachi Ikuo 2, Ohtake Hiroto 3,Samukawa Seiji 3 |
|
16 |
Investigation of process matching with radical map |
Hitachi Ltd. Central Research Lab. 1,Renesas Technology Corp. 2@*Kihara Yoshihide 1,Tanaka Junichi 1,Yokoi Takahiro 2, Tadokoro Masahiro 2 |
|
17 |
Variation Analysis of Dry Etching Process Characteristics using EES |
Sony Corp. 1@*Kawashima Atsushi 1, Takagi Hitoshi 1, Tanaka Yasuhito 1, Sakayori Hiroyuki 1, Kuboi Nobuyuki 1, Ohshima Keiji 1, Nagahata Kazunori 1, Tatsumi Tetsuya 1 |
| 8.5 Plasma Nanotechnology |
| Sept. 2 9:30`13:00 |
| 2a-ZC-@/ I |
| £ |
1 |
Low Temperature Growth of Carbon Nanotubes Using Ion-assisted Surface-wave Plasma |
Shizuoka Univ.@Ma Qiang 1, Lu Di 1, Ogino Akihisa 1, Nagatsu Masaaki 1 |
| ’ |
2 |
Growth mechanism of carbon nanotubes in atmospheric-pressure PECVD (2) |
Tokyo Inst.@*Takuya Karatsu 1, Kuma Ohnishi 1, Tomohiro Nozaki 1, Ken Okazaki 1 |
|
3 |
Carbon nanotube growth on a micro electrode tip and their field emission properties |
Osaka Univ.@*Tomohiro Iba 1, Hiroaki Nishiyama 1, Mizue Mizoshiri 1, Yoshinori Hirata 1 |
| ’ |
4 |
Effect of Plasma Treatment on Field Emission Property of Nano-sized Vertically Aligned Carbon Nanotubes |
Shizuoka Univ.@*Matsuda Takafumi 1, Sato Jun 2, Ogino Akihisa 1, Nagatsu Masaaki 1 |
|
5 |
Investigation of water-solubilization of CNTs using microplasma in aqueous solution (I) Influence of pH |
Kyushu Univ. 1@Imasaka Kiminobu 1, Khaled Usama 1, Suehiro Junya 1 |
|
6 |
Investigation of water-solubilization of CNTs using microplasma in aqueous solution (II) Influence of conductivity |
Kyushu Univ. 1@Imasaka Kiminobu 1, Khaled Usama 1, Suehiro Junya 1 |
|
7 |
Effect of Plasma Treatment on Oscillating Phenomena in Fowler-Nordheim Plot of Nanotube Field Emitters |
Shizuoka Univ.@*Sato Jun 1, Matsuda Takafumi 2, Ogino Akihisa 2, Nagatsu Masaaki 2 |
| |
|
Break 11:15`11:30 |
|
|
8 |
Mechanism of ZnO Nanowires Growth in Hollow-Type Magnetron O2/Ar RF Plasma |
Grad. School of Eng., Tohoku Univ. 1@*Hideki Ono 1, Satoru Iizuka 1 |
|
9 |
Carbon nano-material synthesis by an arc discharge method in water using electrodes of different metals |
Tokyo Univ. of Science 1@*Kizu Takio 1,Nishikawa Eichi 1,Aikawa Shinya 1,Kim Yuichi 1,Kioka Toshihide 1 |
| ’ |
10 |
Surface modification of silicon quantum dots and analysis of chemical structure |
Tokyo Tech. 1@* Takashi Nakamuta 1, Masaki Sagawa 1, Tomohiro Nozaki 1, Ken Okazaki 1 |
|
11 |
Improvement of catalytic activity of Pt/CNB by controlling Pt nanoparticles size |
Graduate School of Eng., Nagoya Univ 1,EcoTopia Science Inst., Nagoya Univ. 2,CREST/JST 3@Ichino Yoshimichi 1,Mitamura Koji 2,3,Saito Nagahiro 1,3,Takai Osamu 1,2,3 |
|
12 |
Structure Analysis of Zinc Oxide Nanophosphors by Cathodoluminescence with Energy-controlled Electron beams |
Shizuoka Univ.@*Shinji Kosuke 1, Ou Qiongrong 2, Matsuda Takafumi 3, Ogino Akihisa 3, Nagatsu Masaaki 3 |
|
13 |
Gas-phase production and transport of carbonic particulates by high-pressure magnetron sputtering |
Nagoya Univ. 1,Univ. Tun Hussein Onn Malaysia 2,Nagoya Univ. 3@Tsutsumi Takahiko 1, Takada Syouiti 1, Nafarizal 2, Sasaki Kouiti 3 |
| 8.6 General Plasma topics, New Application and Interdisciplinary Area |
| Sept. 2 9:30`18:00 |
| 2a-ZD-@/ I |
|
1 |
Development of a strongly-coupled one-component plasma-source using a Linear RF trap |
Nagoya Univ. 1@*Aramaki Mitsutoshi 1, Kameyama Satoshi 1, Kono Akihiro 1 |
| ’ |
2 |
Observation of One-Component Strongly-Coupled Plasma in a Linear RF Trap using a Probe Laser |
Nagoya Univ. 1,Osaka Univ. 2@*Kameyama Satoshi 1,Aramaki Mitsutoshi 1,Sakawa Youichi 2,Shoji Tatsuo 1,Kono Akihiro 1 |
|
3 |
Measurement of vacuum ultraviolet emission from Ne/Xe gas discharge in plasma display panel |
Hiroshima Uni.@Giichiro Uchida, Hiroshi Kajiyama, Tsutae Shinoda |
| £ |
4 |
Xenon Iodide Formation in Dielectric Barrier Discharge Excilamp |
Uzhgorod Nat. Univ. 1, Ehime Univ. 2@Mykola Guivan 1,2, Hideki Motomura 2, Masafumi Jinno 2 |
|
5 |
Development of Thin Tubular XeCl(308nm) Excimer Lamp |
ORC Manufacturing Co.,Ltd 1@*Yasuda Makoto 1, Kobayashi Go 1 |
|
6 |
Modeling of dielectric barrier discharge (15) – Dependence of efficiency on pulsed applied voltage – |
National Defense Academy 1, Nagoya Inst. Tech. 2, Hokkaido Univ. 3@*Haruaki Akashi 1, Akinori Oda 2, Yosuke Sakai 3 |
| |
|
Break 11:00`11:15 |
|
|
7 |
Effect of substrate temperature on secondary electron emission of MgO thin film electrodes deposited by sputtering |
Kanagawa Inst. of Tech.@*Namie Masamune, Misu Takayuki, Goto Miki, Arai Toshihiko |
|
8 |
Effect of surface roughness on secondary electron emission of CVD diamond electrodes |
Kanagawa Inst. of Tech.@Masahiko Murakami, *Takayuki Misu, Toshikazu Uehara, Shimon Ono, Miki Goto, Toshihiko Arai |
| £ |
9 |
Inactivation of Bacillus Subtilis Spores by Xenon Iodide Excilamp |
Uzhgorod Nat. Univ. 1, Ehime Univ. 2@*Mykola Guivan 1,2, Takashi Kamikozawa 2, Yuki Omura 2, Kazunori Kadowaki 2, Hideki Motomura 2, Masafuji Jinno 2 |
| ’ |
10 |
Surface Treatment of Cellulose in Microwave-Excited Plasmas at Atmospheric Pressure |
Kyoto Inst. Tech. 1,ADTEC Plasma Tech. 2@*Yoshida Shohei 1,Takahashi Kazuo 1,Urayama Takuya 2 |
|
11 |
Plasma Agriculture - Sterilization of Penicillium digitatum Using Nonequilibrium Atmospheric Pressure Plasma - |
Wakayama Univ. 1,NU EcoEngineering CO.LTD. 2,NU system CO.LTD. 3,Nagoya Univ. 4@Sachiko Iseki 1,Keiji Yamamoto 1,Takayuki Ohta 1,Masafumi Ito 1,Hiroyuki Kano 2,Yasuhiro Higashijima 3,Masaru Hori 4 |
| |
|
Lunch 12:30`13:30 |
|
| 2p-ZD-@/ I |
|
1 |
Electromagnetic Wave Propagation in Plasma Photonic Crystal with Photonic Band Gap (III) |
Kyoto Univ. 1@*Naito Teruki 1, Sakai Osamu 1, Tachibana Kunihide 1 |
| ’ |
2 |
Effect of singlet O and singlet O2 generated by oxygen RF plasma on treatment of protein particles |
Sasebo N.C.T. 1 , Saga Univ. 2 @Y. Yagyu 1, N. Hayashi 2, W. Guan 1, H. Kawasaki 1, T. Ohshima 1 and Y. Suda 1 |
|
3 |
Low-tempereture Processing of Bio-polymers Using Ion-energy Controlled Surface-wave Plasma |
Shizuoka Univ.@*Kojima Shuhei 1, Ogino Akihisa 2, Tanaka Shigeyasu 2, Fujiwara Taketomo 2, Kawagishi Hirokazu 2, Nagatsu Masaaki 2 |
|
4 |
Sterilization inside Medical Container Using Microwave Plasmas |
Shizuoka Univ. 1,2, JST Innov. Satellite Shizuoka 3, GMA Co. 4@*Fujioka Yuya 1, M. K. Singh 2, Xu Lei 3, Ogino Akihisa 2, Kurawaki Ichiro 4, Nagatsu Masaaki 1,2 |
|
5 |
Development of organic synthesis process by using solution plasma |
EcoTopia Science Inst., Nagoya Univ. 1, JST-CREST 2, Graduate School of Engineering, Nagoya Univ.@Koji Mitamura 1,2, Nagahiro Saito 2,3, Osamu Takai |
|
6 |
Effects of ozone and OH radicals on the decomposition of methylene blue using a pulsed-discharge plasma. |
Muroran Inst. Tech.@Ikoma Shin 1,*Satoh Kohki 1,Itoh Hidenori 1 |
| ’ |
7 |
Solute Decomposition with Microwave Bubble Plasma at Atmospheric Pressure. |
Nagoya Univ. 1,Chubu Univ. 2@Ryota Saito 1, Yasuhiro Sugiura 1, Isijima Tatsuo 1, Hirotaka Toyoda 1, Hideo Sugai 2 |
|
8 |
Effects of Water Vapor Microwave Plasma Treatment on Water at Saturated Vapor Pressure |
Kochi Univ. Technol. 1, JST Kochi Sat. 2@*Kazumasa Kawamura 1, Jun-Seok Oh 2, Akimitsu Hatta 1 |
| |
|
Break 15:30`15:45 |
|
|
9 |
Excited Ionization Current Detector for Gas Chromatography by Atmospheric Pressure Microplasma (II) |
Shimadzu Co. 1, Osaka Univ. 2@*Kei Shinada 1,Takahiro Nishimoto 1,Katsuhisa Kitano 2,Satoshi Hamaguchi 2 |
|
10 |
Mechanism of the plasma sterilization in liquid with nonequilibrium atmospheric plasma jets II |
Osaka Univ. 1,TRI of Osaka Pref. 2@*Katsuhisa Kitano 1,Satoshi Ikawa 2,Satoshi Hamaguchi 1 |
|
11 |
Electron spin resonance (ESR) study of free radical formation in liquid by plasma processing II |
Osaka Univ. 1, Osaka Univ. 2@Tani Atsushi 1, Kitano Katsuhisa 2, Mizotani Kohei 2, Hamaguchi Satoshi 2 |
| £ |
12 |
Optical emission diagnostics of spark-plug assisted atmospheric-pressure microwave discharges |
Nagoya Univ. 1, Imagineering Inc. 2@*Mansour ElSabbagh 1, Koichi Sasaki 1, Masashi Kaneko 2, Yuji Ikeda 2 |
| ’ |
13 |
Diagnostics of Reaction Products in Microwave Bubble Plasma Using Fluorescent Probe |
Nagoya Univ. 1@*Sugiura Hiroyasu 1,Saito Ryota1,Ishijima Tatsuo 1,Toyoda Hirotaka 1 |
|
14 |
Dynamic Metamaterials Composed of Microplasmas and Metal Components (III) |
Kyoto Univ. 1@*Shimomura Takuya 1, Sakai Osamu 1, Tachibana Kunihide 1 |
|
15 |
Treatment of hydrocarbon using atmospheric surface discharge |
Saga Univ. 1, Ryukyu Univ. 2 @*Hayashi Nobuya 1, Kamada Ryoki 1, Kuboyama Gouki 1, Yonesu Akira 2 |
|
16 |
Bulk Nitriding of Low-Carbon Steel Using Electron-Beam-Excited Plasma (EBEP) for Improving Strength |
Toyota Technol. Inst. 1@*Ichiki Ryuta 1, Yoshida Masashi 1, Hara Tamio 1, Okumiya Masahiro 1, Tsunekawa Yoshiki 1 |
|
17 |
Development of Laser-Driven GPR Using Sub-nanosecond Pulse Laser |
Osaka Univ. 1, Inst. Laser Tech. 2@*Nakajima Hirotomo 1, Shimada Yoshinori 2, Tanaka A. Kazuo 1, Somekawa Toshihiro 2, Fujita Masayuki 2 |