| 6 Thin Films and Surfaces |
| 6.1 Ferroelectric Films |
| Sept. 2 9:00`17:30 |
| 2a-K-@/ II |
|
1 |
Effects of Bi4Si3O12-addition on average and local structure, and ferroelectric performances of (Bi, Pr)4Ti3O12 |
Tokyo Univ. of Science 1@*Kotani Hirotaka 1,Idemoto Yasushi 1, Naoto Kitamura 1 |
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2 |
Crystallized Condition Dependency of Bi4Ti3O12 Film Characteristics |
Shibaura Inst. of Tech. 1, Hachinohe Inst. of Tech. 2@*Yamaguchi Masaki 1, Masuda Yoichiro 2 |
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3 |
Preparation and characterization of oriented (Na0.5, Bi0.5)TiO3/LaNiO3 thin films on epitaxial Α-Al2O3/Si (100) substrates |
Toyohashi Univ. of Tech. 1,JST-CREST 2@*Kikuhi Kenrou 1, Guo Yiping 1, Keiji Hayashida1, Akai Daisuke 1, Sawada Kazuaki 1,2, Ishida Makoto 1,2 |
|
4 |
Fabrication of (001)-oriented (Ca,Sr)Bi4Ti4O15 film by chemical solution process |
Sophia Univ.1, Tokyo Tech.2@*Yuki Mizutani 1,Hiroshi Uchida 1,Hiroshi Funakubo 2,Seiichiro Koda 1 |
|
5 |
MOCVD growth of Conductive Bi2Ru2O7 Films and Their Application as Electrode of (Bi1.5Zn0.5)(Zn0.5Nb1.5)O7 Tunable Capacitor |
Tokyo Tech 1. Bruker AXS 2. The Univ. Electro-Commun. 3. Tokyo Medical Univ. 4@Rikyu Ikariyama 1. *Hiroshi Funakubo 1. Shintaro Yasui 1. Tomoaki Yamada 1. Hirtoshi Morioka 1,2. Keisuke Saito 2. Yoshihiko Kobayashi 3,4. Tetsuya Kaneko 3. and Kichizo Asai 3 |
|
6 |
Dependences of crystal and local structures and ferroelectric performance on surplus-heat steam(SHS) treatment for (Bi, La)-Ti-Si-O ferroelectric material |
Tokyo Univ. of Science 1@Idemoto Yasushi 1, *Iiyama Takashi 1, Kitamura Naoto 1 |
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Break 10:30`10:45 |
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7 |
Characterization of Ferroelectric capacitors using ZnO-type transparent conductive films as electrode |
Kanazawa Inst. of Tech., OEDS R&D Center 1, Faculy of Engineering 2@*Koji Aizawa 1, Koichi Hoko 2, Hiroyuki Inagaki 2, Yoshiaki Tokunaga 1 |
|
8 |
Synchrotron-based nano-sec-order time-resolved in-situ diffraction for lattice-strain analysis of ferroelectric thin films under an applied pulse electric field |
JASRI/SPring-8 1, JST-CREST 2, Tokyo Inst. Tech. 3, Osaka Univ. 4 @*Osami Sakata 1,2, Yasui Shintaro 3, FujisawaTakashi 3, KamoTakafumi 3, Nakashima Seiji 4, Kimura Shigeru 1, Okuyama Masanori 4, Funakubo Hiroshi 3 |
|
9 |
An electric-field-induced strain of polycrystalline BiFeO3 thin films measured by time-resolved x-ray diffraction using synchrotron radiation |
Osaka Univ. 1, JASRI/SPring-8 2, JST-CREST 3, Tokyo Inst. Tech. 4@*Nakashima Seiji 1, Sakata Osami 2,3, Kanashima Takeshi 1, Funakubo Hiroshi 4, Okuyama Masanori 1 |
| ’ |
10 |
In-situ Observation of Field Induced Crystal Structure in Epitaxial BiFeO3 Thin Films using Synchrotron Radiation. |
Tokyo tech. 1, JASRI/SPring-8 2, JST-CREST 3@Yasui Shintaro 1, Kamo Takafumi 1, Fujisawa Takashi 1, Yamada Tomoaki 1, Sakata Osami 2,3, Funakubo Hiroshi 1 |
| £ |
11 |
Enhanced Ferroelectric Properties of BiFexCr1-xO3 Thin Film Formed by
Chemical Solution Deposition |
Tokyo Tech 1, Fujitsu Lab Ltd. 2@*Zhiyong Zhong 1, Yoshihiro Sugiyama 2, Hiroshi Ishiwara 1 |
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Lunch 12:00`13:00 |
|
| 2p-K-@/ II |
|
1 |
Characteristics of BiFeO3 films formed on bottom SrRuO3/Pt(111) and Pt(111) electrodes by sputtering |
Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology1, Fujitsu laboratories,Ltd.2@Kim Jeong Hwan1,Hiroshi Funakubo1, Sugiyama Yoshihiro2, Hiroshi Ishiwara1 |
|
2 |
Photoassisted polarization switching in BiFeO3 |
Osaka Univ.@*M. Tonouchi, D. Rana, K. Takahashi, I. Kawayama, H. Murakami |
|
3 |
Dielectric characterization of epitaxial BiFeO3 thin films on La-doped SrTiO3 substrates |
Osaka Univ. 1, Univ. of Hyogo 2@*Nakashima Seiji 1, Park Jung Min 1, Kanashima Takeshi 1, Fujisawa Hironori 2, Shimizu Masaru 2, Okuyama Masanori 1 |
|
4 |
Leakage Current Measurement of BiFeO3 Thin Films using conductive AFM probe |
Osaka Prefecture Univ. M1@*Ujimoto Katsuya M1,Yoshimura Takeshi,Fujimura Norihuumi |
| ’ |
5 |
Multiferroic properties of epitaxial Bi1-XBaXFeO3 thin films and its multilayers |
Nagoya Univ. 1, EcoTopia Science Inst. Nagoya Univ. 2@*Yoshimoto Kosuke 1,Sugimoto Yasunori 1,Katoh Fumiya 1,Asano Hidefumi 1,Sakamoto Wataru 2,Yogo Tosinobu 2 |
|
6 |
PLD deposition and characterization of Sr and Zn co-substituted BiFeO3thim films |
Osaka Univ.1@*Park Jungmin 1, Nakashima Seiji 1, Kanashima Takeshi 1, Okuyama Masanori 1 |
|
7 |
Magnetism and dielectricity at room temperature in BiFeO3/BiCrO3 artificial superlattice |
ICR, Kyoto Univ. 1, Sophia Univ. 2, Fujitsu Labs. 3, Univ. of Hyogo 4, RIEC, Tohoku Univ. 5@*Noriya Ichikawa 1,2, Yusuke Imai 2, Kei Hagiwara 2, Masaya Arai 2, Atsushi Tanokura 2, Hiroshi Sakama 2, Masaki Azuma 1, Yuichi Shimakawa 1, Mikio Takano 1, Yasutoshi Kotaka 3, Masashi Yonetani 4, Hironori Fujisawa 4, Masaru Shimizu 4, Kenya Ishikawa 5, Yasuo Cho 5 |
| ’ |
8 |
Magnetic and ferroelectric properties of the BiFeO3-BiCoO3 solid solution films |
Tohoku Univ. 1, TIT 2, NDA 3, AIST 4, TUS 5@*Naganuma Hiroshi 1, Yausi Shintaro 2, Nishida Ken 3, Iijima Takashi 4, Funakubo Hiroshi 2, Okamura Soichiro 5, Ando Yasuo 1 |
|
9 |
Influence of the amount of doping elements on characteristics in (Bi,Nd)(Fe,Mn)O3 thin films |
Graduate School of Natural Science. & Technology. Kanazawa Univ.,1, Graduate School of Engineering, Tohoku Univ.,2, Ishikawa National College of Technology3, Faculty of Science, Tokyo University of Science4@*Takeshi Kawae1, Hisashi Tsuda1, Hiroshi Naganuma2, Satoru Yamada3, Soichiro Okamura4, Akiharu Morimoto1 |
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Break 15:15`15:30 |
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10 |
Magnetic and dielectric properties of rare earth garnet(R3Fe5O12) thin films |
Osaka Univ. 1,Univ. of Tokyo 2@*Mikami Masateru 2,Yamahara Hiroyasu 2,Seki Munetoshi 2,Tabata Hitoshi 2 |
| ’ |
11 |
Room Temperature Giant Magnetoelectric Effect in Bi-substituted Rare Earth Garnet Ferrite Thin Films |
Univ. of Tokyo 1, Osaka Univ. 2
@*Seki Munetoshi 1, Mikami Masateru 2, Yamahara Hiroyasu 2, Koide Takushi 2, Tabata Hitoshi 1 |
| ’ |
12 |
Dielectric Characteristics of YMnO3 Thin Film at around Magnetic Phase Transition Temperature |
Osaka Prefecture Univ. 1,JSPS research fellow 2@*Kazuhiro Maeda 1 2, Yoshimura Takeshi 1, Fujimura Norifumi 1 |
|
13 |
Raman scattering observation of YMnO3 thin films with applied electric field |
Kyoto Inst. Tech. 1, Wakayama Univ. 2, Osaka Prefecture Univ. 3@*Tonari Nobuhiko 1, Fukumura Hideo 1, Hasuike Noriyuki 1, Harima Hiroshi 1, Kisoda Kenji 2, Maeda Kazuhiro 3, Yoshimura Takeshi 3, Fujimura Norifumi 3 |
| £ |
14 |
Polarization switching behavior of YbMnO3 Epitaxial Thin Films at around Magnetic Phase Transition Temperature |
Osaka Prefecture Univ. 1@*Keisuke Fukae 1, Kazuhiro Maeda 1, Takeshi Yoshimura 1, Norifumi Fujimura 1 |
| £ |
15 |
Epitaxy and ferrimagnetic properties of YIG thin films |
RIKEN-CMRG 1, NIMS 2, WPI-AIMR Tohoku Univ.3, Dept. of Appl. Phys. Univ. of Tokyo 4@*Krockenberger Y 1, Yun K. S. 2, Arisawa S. 2, Hatano T. 2, Kawasaki M. 1,3, Tokura Y. 1,4 |
|
16 |
Epitaxial Growth of Charge Ordering Type Ferroelectric YbFe2O4 Thin Films (II) |
Osaka Prefecture Univ.@*Hirose Koji M1,Yoshimura Takeshi,Ashida Atsushi,Fujimura Norifumi |
|
17 |
PL characteristics of Er-doped BiFeO3 thin film prepared PLA method |
Grad. School of Natural Sci. & Tech. Kanazawa Univ. 1@*Ymamura Ryusuke 1,Tsuda Hisashi 1,Kawae Takeshi 1,Morimoto Akiharu 1 |
| 6.1 Ferroelectric Films |
| Sept. 3 9:00`17:30 |
| 3a-K-@/ II |
|
1 |
Proposal and device characterization of Controlled Polarization type ferroelectric gate TFT |
Osaka Pref.Univ. 1@Takeshi Yoshimura 1,Norifumi Fujimura 1 |
|
2 |
Electrical characteristics of controlled polarization type ferroelectric-gate thin film transistor using ZnO/YMnO3/Pt structure |
Osaka Prefecture Univ. 1@*T. Fukushima 1, T. Yoshimura 1, K. Masuko 1, K. Maeda 1, A. Ashida 1, N. Fujimura 1 |
|
3 |
Novel Nano-device using Polarization Interaction on YMnO3 / ZnO Heterostructure |
Osaka Pre. Univ.@Sakamoto Shinya 1, Fukushima Tadahiro 1, Yoshimura Takeshi 1, Maeda Kazuhiro 1, Ashida Atsushi 1, Fujimura Norifumi 1 |
|
4 |
Characteristics of MFIS structures based on poly(vinylidene fluoride-trifluoroethylene) |
Tokyo Inst. of tech@Yoon JooWon 1. Hiroshi Ishiwara 1.
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5 |
Application of STN ferroelectric layer to use of MFIS diode |
Tokyo Inst. of Tech.IGSEE 1@*O Tokyo 1, Ishiwara Hiroshi 1 |
|
6 |
Optimization of Writing- and Reading-Pulses for FET Type Ferroelectric Memory with an Intermediate Electrode |
Japan Adv. Inst. Sci. & Tech.@*Horita S. and B. N. Q. Trinh |
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Break 10:30`10:45 |
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7 |
Electrical characteristics of advanced 2T-type FeRAM cells composed of p-channel MFIS-FET and n-channel MOSFET |
Fujitsu Laboratories Ltd. 1,Tokyo Inst. of Technology IGSSE 2@*Hoko Hiromasa 1,Kawashima Shoichiro 1,Sugiyama Yoshihiro 1,Ishiwara Hiroshi 2 |
|
8 |
Data disturb characterization for 2T MFISFET memory IV |
Tokyo Inst. of Tech. IGSSE 1,Fujitsu Lab. 2@*Kondo Yumi 1,Hoko Hiromasa 2,Sugiyama Yoshihiro 2,Ishiwara Hiroshi 1 |
|
9 |
IGZO channel thin film transistors with ferroelectric and high-k gate insulators |
Tokyo Tech. P&ILab. 1@*Oiwa Tomohiro 1,Kondo Yohei 1,Nakata Mitsuru 1,Tokumitsu Eisuke 1 |
| £ |
10 |
Improved Electrical Properties of Metal-Ferroelectric-Insulator-Silicon Diodes using an Epitaxial SrTiO3 Buffer Layer
|
Interdisciplinary Graduate School of Science and Engineering
Tokyo Institute of Technology@Xubing Lu and Hiroshi Ishiwara |
|
11 |
C60 memory transistors with planarized ferroelectric film |
Tokyo Inst. of Tech. IGSSE 1, Sharp Corp 2@*Takahito Tanaka 1, Kazunori Annen 2, Masakazu Ibata 2, Hiroshi Ishiwara 1 |
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Lunch 12:00`13:00 |
|
| 3p-K-@/ II |
|
1 |
Effects of heat-treatment condition on HfO2 films prepared from alkoxy-derived solutions |
AIST 1@*Suzuki Kazuyuki 1, Kato Kazumi 1 |
| ’ |
2 |
Influence of surface structure of Pt thin films on domain structure of PbTiO3(001) thin films |
Univ. Hyogo@*Yukio Hiki 1, Hronori Fujisawa 1,Masaru Shimizu 1 |
| ’ |
3 |
Fabrication of Epitaxial SrRuO3 Top Electrodes on PbTiO3 Ultra Thin Films by Sputtering |
Univ.Hyogo 1, Fujitsu Lab.Ltd 2@*Nagasoe Ryo 1, Sumii Ryosuke 1, Fujisawa Hironori 1, Shimizu Masaru 1, Kotaka Yasutosi 2, Honda Koichiro 2 |
|
4 |
Observations of polarization switching in PbTiO3 ultrathin films by scanning nonlinear dielectric microscopy |
Univ. Hyogo 1@Masahi Yonetani 1, Ryosuke Sumii 1, Hironori Fujisawa 1, Masaru Shimizu 1 |
| ’ |
5 |
Observations of PbTiO3(001) nanoislands by contact resonance piezoresponse force microscopy |
Univ.Hyogo 1@*Seioh yoshihiro 1,Fujisawa Hironori 1,Shimizu Masaru 1 |
| £ |
6 |
"Intelligent" Dynamics of Ferroelectric Switching - Pulse Amplitude and Period Dependence of Polarization Reversal |
Graduate School of Eng. Sci., Osaka Univ. 1@Nicastro Damian 1, Ricinschi Dan 1, Okuyama Masanori 1 |
| ’ |
7 |
In-situ ovservation of epitaxial PZT films by Raman spectroscopy under the electric field |
Tokyo Inst. Tech. Inov. Mat. 1, NIMS 2, NDA 3, Tokyo Univ. Sci. 4@*Nakajima Mitsumasa 1, Nakaki Hiroshi 1, Yamada Tomoaki 1, Ishikawa Mutsuo 1, Osada Minoru 2, Nishida Ken 3, Yamamoto Takashi 3, Shima Hiromi 4, Okamura Soihiro 4, Funakubo Hiroshi |
| ’ |
8 |
90º domain switching in c-axis oriented PZT epitaxial thin films by electric field |
Kyoto Univ.@*M. Mizote Masashi 1, Kanno Isaku 1, Kotera Hidetoshi 1, Wasa Kiyotaka 1 |
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Break 15:00`15:15 |
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9 |
d31 piezoelectric constant measured by PZT microcantilever displacement actuated under AC and DC condition |
National Institute of Advanced Industrial Science and Technology@Takeshi Kobayashi, Maeda Rrutaro |
| ’ |
10 |
Thickness dependency of tetragonal epitaxial Pb(Zr0.35,Ti0.65)O3 thick films with polar-axis orientation |
Tokyo Tech. 1, Bruker AXS 2@*Takashi Fujisawa 1,Hiroshi Nakaki 1,Rikyu Ikariyama 1,Tomoaki Yamada 1,Hitoshi Morioka 12, Keisuke Saito 2, Hiroshi Funakubo 1 |
| ’ |
11 |
Variation in leakage current propeties of PZT thin-film capacitors with the progress of imprint |
Tokyo University of Science@*Soichiro Koshika 1, Hiromi Shima 1,Takashi Nakajima 1, Soichiro Okamura |
| ’ |
12 |
Characteristics of transferred epitaxial PZT thin film |
Kyoto Univ. 1@*Morimoto keiji 1,Kanno Isaku 1,Kotera Hidetoshi 1,Wasa Kiyotaka 1 |
| ’ |
13 |
La-Content Dependence on Crystallinity of PLZT Films Deposited by Advanced Sol-gel Process |
NAIST@*Fujii Takeshi 1,Echizen Masahiro 1,Takashi Nishida 1,Kiyoshi Uchiyama 1,Tadashi Shiosaki 1 |
| £ |
14 |
Tunable photonic crystal filter having electrooptic effect of PLZT ferroelectric film |
Graduate school of Engineering Science-Osaka Univ. 1, Organization for the Promotion of Research on Nanoscience and Nanotechnology Osaka Univ. 2@Le Van Hai 1, Kanashima Takeshi 1, Okuyama Masanori 1, Ogawa Hisahito 2 |
|
15 |
Development of Bulk Acoustic Wave Resonators using Pb(Mn,Nb)O3-Pb(Zr,Ti)O3 thin films |
Matsushita Electric Works, Ltd. 1, Kyoto Univ. 2@*Norihiro Yamauchi 1, Takeo Shirai 1, Takaaki Yoshihara 1, Tomoaki Matsushima 1, Yoshiki Hayasaki 1, Isaku Kanno 2, Kiyotaka Wasa 2 |
|
16 |
Preparation of Ru-based oxide thin films by liquid-delivery MOCVD |
NAIST 1@*Ichise Hiroshi 1, Uchiyama Kiyoshi 1, Shiosaki Tadashi 1 |
| ’ |
17 |
Effect of Incubation Time on Ruthenium Films Prepared by MOCVD Using DER |
Tokyo Inst. of Technology 1@*Hirano Masaki 1,Kawano Kazuhisa 1,Funakubo Hiroshi 1 |
| 6.1 Ferroelectric Films |
| Sept. 4 9:00`12:00 |
| 4a-K-@/ II |
|
1 |
Growth mechanism of iridium thin films fabricated by spray CVD |
Tokyo Polytechnic Univ. 1, Tokyo Inst. Technol.2 , Tosoh Co. 3@Yoshiyuki Seki 1,Takeshi Kondo 1,Hiroyuki Enta 1,Meihan Wang 1,Yutaka Sawada 1,Hiroshi Funakubo 2,Noriaki Oshima 3,Hirokazu Chiba 3 |
|
2 |
ECR plasma sputtering of Pt electrode film on SiO2 without an adhesion layer (II) |
NTT MI Labs.@Akazawa Housei 1 |
|
3 |
Fabrication of SrTa22O6 thin films by spray MOCVD and their characterization |
NAIST.1@Gakuko Lin 1, H. Takeda 1, T. Nishida 1, K. Uchiyama 1, T. Shiosaki 1 |
| ’ |
4 |
Fabrication of ZnO Nanorods by MOCVD and Their Applications to Ferroelectric Nanorods |
Univ.Hyogo 1@*Kuri Ryohei 1, Fujisawa Hironori 1 and Shimizu Masaru 1 |
| ’ |
5 |
Fabrication of ferroelectric gate transistor with ZnO nanorods as a channel |
Univ. Hyogo 1@*Nagaoka Takuya 1, Kuri Ryohei 1, Fujisawa Hironori 1, Shimizu Masaru 1 |
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Break 10:15`10:30 |
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| ’ |
6 |
Thickness effect on ferroelectric switching characteristics of VDF/TrFE copolymer films |
Tokyo Univ. of Sci.@*Nakajima Takashi 1, Takahashi Yoshiyuki 1, Okamura Soichiro 1, Furukawa Takeo 1 |
|
7 |
Ferroelectric properties of VDF/TrFE capacitor using photolithographically prepared Au electrode |
Gunma Ind. Tech. Center 1, Faculty of Science, Tokyo Univ. Science 2 @Yamamoto Ryoichi 1, Okada Akifumi 2, Takahashi Yoshiyuki 2, Furukawa Takeo 2 |
|
8 |
Improvement of organic ferroelectric memory by flattenning P(VDF-TrFE) surface |
Grad. Schl. of Eng. Sci.,Osaka Univ.@*Miyashita Hiroyuki 1,Watanabe Tomohiro 1,Kanashima Takeshi 1,Okuyama Masanori 1 |
| ’ |
9 |
Simplification of comparator circuits utilizing ferroelectric hysteresis |
ISIR-Sanken, Osaka Univ. 1, School of Engineering, Univ. of Tokyo 2@*Hotta Yasushi 1, Kanki Teruo 1, Asakawa Naoki 1, Kawai Tomoji 1, and Tabata Hitoshi 2 |
| ’ |
10 |
Actual Information Data Recording in Ferroelectric Data Storage System with a Density of 4 Tbpsi |
Tohoku Univ. 1@*Tanaka Kenkou 1, Cho Yasuo 1 |
|
11 |
Terahertz domain spectroscopy of dielectric thin films with DAST crystal as a terahertz source |
Inst. of Laser Engineering Osaka Univ. 1, Graduate School of Engineering Osaka Univ. 2@Ryuhei Kinjo 1, Kei Takeya 1, Iwao Kawayama 1, Hironaru Murakami 1, Takeshi Matsukawa 2, Yoshinori Takahashi 2, Masashi Yoshimura 2, Yasuo Kitaoka 2, Yusuke Mori 2, Tomotaka Sasaki 2, Masayoshi Tonouchi 1 |
| 6.1 Ferroelectric Films |
| Sept. 5 9:00`11:45 |
| 5a-K-@/ II |
|
1 |
Tunable Property of Strain-controlled Epitaxial SrTiO3 Thin films by Two-step Growth Technique |
Tokyo Tech. 1, Swiss Federal Inst.of Tech. EPFL 2@*Tomoaki Yamada 1, Alexander Tagantsev 2, Paul Muralt 2, Nava Setter 2, Hiroshi Funakubo 1 |
| ’ |
2 |
Effect of the lattice strain on antiferrodistortive phase transition in epitaxial SrTiO3 films |
Bruker AXS 1, Tokyo Tech. 2@*Hitoshi Morioka 1,2, Keisuke Saito 1, Tomoaki Yamada 2, Toshiyuki Kurosawa 1, and Hiroshi Funakubo 2 |
| ’ |
3 |
Influence of interface morphology on the leakage current for Metal-Insulator-Metal thin film capacitor. |
Grad. School of Natural Sci.& Tech. Kanazawa Univ. 1,
Ishikawa National College of Technology 2@*Tae young Kim 1,Kentaro Kawasaki 1,Takeshi Kawae 1,Shigeru Ohtsubo 2,Satoru Yamada 2, Akiharu Morimoto 1 |
| ’ |
4 |
Orientation dependence of crystal structure and dielectric properties for epitaxial (Ba,Sr)TiO3 thin film |
Tokyo Tech. 1@Kamo Takafumi 1, Yamada Tomoaki 1, Funakubo Hiroshi 1 |
|
5 |
Hysteresis structure in C-V curves for (Ba0.6Sr0.4)TiO3 thick films caused by strained hetero-structure |
Grad. School of Natural Sci. & Tech. Kanazawa Univ. 1,Taiyou Yuden Co.,Ltd. 2,@*Fukuda Yuji 1,Nagakoshi Yasuhito 1,Morito Kentarou 2,Kawae Takeshi 1,Morimoto Akiharu 1, |
| ’ |
6 |
Preparation of BST film by excimer laser-assisted metal organic deposition |
TDK , AIST@*Miyamoto Yuki 1, Tsuchiya Tetsuo 2 |
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Break 10:30`10:45 |
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7 |
Preparation of Ba1-xSrxTiO3 dielectric films by the electrophoretic deposition method with binder added slurry and heat-treatment effects |
Tokyo Univ. of Science 1,MMS 2
@*Hoshino Masahiko 1,Kitamura Naoto 1,Idemoto Yasusi 1,Abe Naohiko 2,Ichiryu Akira 2 |
| £ |
8 |
Investigation of CO2 and H2O Interactions with Epitaxial (Ba,Sr)TiO3(001) Thin Film Surfaces and Their Impact on Electrical Properties |
Fujitsu Limited 1, Fujitsu Lab. Ltd 2, Tokyo Institute of Technology 3@*Baniecki John D. 12,Ishii Masatoshi 12,Kurihara Kazuaki 12,Yamanaka Kazunori 12,Yano Tetsuji 3,Shinozaki Kazuo 3 |
| ’ |
9 |
Properties of Al2O3/Nb2O5 and Ta2O5/Nb2O5 Stacked and Mixed Films for Gigabit DRAM Capacitor |
RNBS Hiroshima Univ. 1, Elpida Memory, Inc. 2@*Masaki Yamato 1,Masami tanioku 2,Hikaru Hara 1,Talamaro Kikkawa 1 |
|
10 |
Electric characterization of semiconductive BaTiO3 thin film |
Nara Institute of Science and Technology 1@*Ohashi Ken 1,Kiyoshi Uchiyama 1,Takashi Nishida 1,Hiroaki Takeda 1,Tadashi Shiosaki 1 |
| 6.2 Carbon Films |
| Sept. 2 |
| 2a-P2-@/ II |
| |
Poster Session
2a-P2-1`28@9:30`11:30 |
| ’ |
1 |
Quality improvement of epitaxial diamond thin film 3 |
Aoyama Gakuin Univ. 1, TOPLAS ENG. 2@*Matsuoka Ryo 1, Kazuhiro Suzuki 2, Mita Seiji 1, Sawabe atsuhito 1 |
| ’ |
2 |
High quality heteroepitaxial diamonds by lateral growth |
Aoyama Gakuin Univ. 1, TOPLAS ENG. 2@Kamano Takashi 1, Mita Seiji 1, Suzuki Kazuhiro 2, Sawabe Atsuhito 1 |
|
3 |
Growth and etching of diamond (111) films during microwave plasma processes |
AIST 1, Univ. of Tsukuba 2, NIMS 3@Tokuda Norio 1, Ogura Masahiko 1, Umezawa Hitoshi 1, Yamabe Kikuo 2, Okushi Hideyo 1,3, Yamasaki Satoshi 1,2 |
|
4 |
Propagation of dislocations and etch-pit of (100) homoepitaxial diamond |
Sumitomo Electric Industries LTD 1, AIST Diamond RC 2, AIST Energy Semicond. Elec. RC 3, AIST Nanoelectronics Inst. 4@*Tatsumi Natsuo 1, Umezawa Hitoshi 2, Kato Tomohisa 3, Yamaguchi Hirotaka 4, Ikeda Kazuhiro 1, Ramanujam Kumaresan 2, Nishibayashi Yoshiki 1, Imai Takahiro 1, Shikata Shinichi 2 |
|
5 |
Nitrogen Concentration Dependence of Lattice Constant of HPHT Ib Diamond Single Crystals |
Tohoku Univ. 1, Diamond Research Center AIST 2@*Shishitani Takashi 1, Arakawa Mototaka 1, Kushibiki Jun-ichi 1, Shikata Shinichi 2 |
|
6 |
Homoepitaxial Diamond Thin Film Grown From Methane-Hydrogen and Nitrogen Gas Mixture |
AIST Diamond Research Center 1, AIST Energy Semiconductor Electronics Research Laboratory 2@*Hideyuki Watanabe@1, Shinichi. Nakashima@2, Shinichi Shikata 1 |
|
7 |
Dependence of Substrate Off-Angle from (001) Surface on Properties of Diamond Films Homoepitaxially Grown Using High-Power Microwave Plasma CVD |
Graduate School of Eng., Osaka Univ. 1@*Kawashima Shinya 1, Maida Osamu 1,Ito Toshimichi 1 |
|
8 |
Misorientation-angle dependence of boron incorporation into (001)-oriented chemical-vapor-deposited (CVD) diamond |
AIST 1, Univ. of Tsukuba 2@@*Ogura Masahiko 1, Kato Hiromitsu 1, Makino Toshiharu 1, Okushi Hideyo 1, Yamasaki Satoshi 1 2 |
|
9 |
Effect of Inserted Boron-Doped Layer on Carrier Diffusion in High-Quality CVD Diamond Layers Homoepitaxiall Grown on HPHT Ib Substrate |
Graduate School of Eng., Osaka Univ. 1@*Kanasugi Masayuki 1, Maida Osamu 1, Ito Toshimichi 1 |
|
10 |
Characterization of Heavily-Boron-Doped Homoepitaxial Diamond Grown Using High-Power-Density Microwave Plasma Chemical-Vapor-Deposition |
Graduate School of Eng., Osaka Univ. 1@*Minokoshi Yusuke 1,Sakai Ryota 1,Maida Osamu 1,Ito Toshimichi 1 |
| £ |
11 |
XPS STUDY ON LIGHTLY AND HEAVILY BORON-DOPED (111) DIAMOND SUFACES AFTER VACUUM ANNEALING |
AIST Diamond RC@Somu Kumaragurubaran 1, Takatoshi Yamada 1, Shin-ichi Shikata 1 |
| ’ |
12 |
Fabrication of heavily boron-doped diamond thin films on Si substrate using BEN treatment and their superconducting properties |
Grad.School of Natural Sci.& Tech. Kanazawa Univ. 1, Fac.of Eng.Kanazawa Univ. 2, National Institute for Materials Science 3@*Yoshida Kazuhiro 1, Okuno Akinori 2, Ishii Satoshi 3, Kawae Takeshi 1, Iiyama koichi 1, Takano Yoshihiko 3, Morimoto Akiharu 1 |
|
13 |
Beryllium-doped diamond grown by microwave plasma CVD |
NTT Basic Research Labs.@*Ueda Kenji 1, Kasu Makoto 1 |
|
14 |
Contact resistance study on heavily phosphorus-doped diamond film and its temperature dependence |
AIST 1, Univ. of Tsukuba 2@*Hiromitsu Kato 1, Daisuke Takeuchi 1, Norio Tokuda 1, Hitoshi Umezawa 1, Hideyo Okushi 1, Satoshi Yamasaki 1,2 |
|
15 |
Electron emission properties from hydrogen-terminated n-type diamond |
NRI-AIST 1, NIMS 2, Univ. of Tsukuba 3@*Daisuke Takeuchi 1, Masahiko Ogura 1, Sung-Gi Ri 1, Hiromitsu Kato 1, Hideyo Okushi 1,2, Satoshi Yamasaki 1,3 |
| ’ |
16 |
Field emission and impact excitation emission in polycrystalline diamond co-planar triode |
Department of Electronic Engineering Univ. of Electro-Communications@Jimbo Yukihiro 1,Isshiki Hideo 1,Kimura Tadamasa 1 |
|
17 |
Excitonic emissions from homoepitaxial diamond p-n junctions - Comparison between (001) and (111) surfaces - |
AIST 1, Univ. of Tsukuba 2@Toshiharu Makino 1, Tomoko Shimomura 1,2, Sunggi Ri 1, Norio Tokuda 1, Hiromitsu Kato 1, Satoshi Yamasaki 1,2, Hideyo Okushi 1 |
| ’ |
18 |
Electrical characterization of nanocrystalline diamond/silicon hetero junction diodes |
Kyushu Univ. 1@Ikeda Tomohiro,Teii Kungen |
|
19 |
Chemical modification of H-terminated diamond powders with optically active functionalities |
AIST 1, Kyushu Inst. Tech. 2@*Nakamura Takako 1, Ohana Tsuguyori 1, Kumagai Toshiya 1, Hagiwara Yuta 2, Tsubota Toshiki 2 |
|
20 |
First-principles Study on Schottky Barrier Height of H-terminated Diamond (100) |
NTT Basic Research Labs. 1@*Kageshima Hiroyuki 1, Kasu Makoto 1 |
| £’ |
21 |
Stability Improvements in Hydrogen-terminated Diamond FETs |
NTT Basic Research Labs. 1@*Michal Kubovic1, Yoshiharu Yamauchi1, Makoto Kasu1 |
| ’ |
22 |
Improvement of cryogenic characteristics of diamond FETs by reduction in contact resistance |
Waseda Univ.@*Tetsuya Tsuno |
|
23 |
Transport properties at the interface of the p-type diamond Schottky diodes |
NIMS 1, Osaka Univ. 2@Tokuyuki TERAJI 1, Yiuri GARINO 1, Yasuo KOIDE 1, and Toshimichi ITO 2 |
| £ |
24 |
Reverse current transient behavior in diamond lateral Schottky diodes |
NIMS 1, Osaka Univ. 2@Yiuri GARINO 1, Tokuyuki TERAJI 1, Satoshi KOIZUMI 1, Yasuo KOIDE 1, and Toshimichi ITO 2 |
| £ |
25 |
Influence of pulse duty ratio on diamond SBD forward characteristics |
AIST@*R.Kumaresan, H.Umezawa, K.Ikeda and S.Shikata |
|
26 |
High temperature static burn-in characteritics of diamond@Schottky diode |
AIST, Diamond RC@Ikeda Kazuhiro, Umezawa Hitoshi, Ramanujam Kumaresan, Shikata Shin-ichi |
| £ |
27 |
Persistent positive and transient absolute negative photoconductivity in diamond photodetectors |
National Institute for Materials Science 1, LGEP-CNRS, France 2@M.Y. Liao 1, J. Alvarez 2, M. Imura 1, J. P. Kleider 2, Y. Koide 1 |
|
28 |
Schottky-Barrier Photodiode using p-Diamond Epilayer Grown on Heavily Boron-doped p+-Diamond Substrate |
MANA/NIMS 1, SenMC/NIMS 2, LGEP/CNRS 3@*Masataka Imura 1, Meiyong Liao 2, Jose Alvarez 3, and Yasuo Koide 2 |
| 6.2 Carbon Films |
| Sept. 2 |
| 2p-P4-@/ II |
| |
Poster Session
2p-P4-1`21@15:30`17:30 |
| £ |
1 |
Hybrid and organic solar cell incorporating cutting carbon nanotubes |
Chubu Univ.1@Kalita Golap1, Adhikari Sudip 1, Aryal Hareram1, Umeno Masayoshi1 |
| £ |
2 |
Platinum and Ruthenium nanoparticles decorated multi walled carbon nanotubes as electrodes for polymer electrolyte membrane fuel cells |
Chubu Univ. 1,Nagoya Univ. 2@Savita P. Somani 1, Prakash R Somani 2, Hideo Uchida 1, Atsushi Sato 1, *@Masayoshi Umeno 1 |
|
3 |
Synthesis of carbon materials from CO2 by plasma CVD |
Chubu Univ. Fac. of Eng.@*Masayoshi Umeno 1,Mikio Noda 1, Sadahito Fujimura 1, Hideo Uchida 1, Karita Golap 1 |
|
4 |
Vibrational spectroscopy of an electron-beam-irradiated C60 film |
J-Power 1, Tokyo Inst. of Technol. 2@*Toshiaki Nishii 1, Akito Takashima 2, Sou Ryuzaki 2, Toshihiro Kai 2, Jun Onoe 2 |
|
5 |
Graphene-like thin film growth on a SiO2 substrate |
NTT Basic Research Labs. 1, Faculty of Science and Technology, Keio Univ. 2@*Satoru Suzuki 1, Tomoyuki Mizuno 2, Hideyuki Maki 2, Yoshihiro Kobayashi 1 |
|
6 |
Measurement of multiple-molecule ions in plasma for amorphous carbon deposition |
Kanazawa Inst. of Technology 1@*Hayakawa Mayu 1, Miyamoto Kouhei 1, Ikenaga Noriaki 1, Sakudo Noriyuki 1 |
|
7 |
Formation of Diamond-Like Amorphous Carbon Films Fabricated by Irradiation of Low-Energy Electrons on Condensed CH4 |
Univ. of Yamanashi@Clean Energy Res.1, Miyatsu Co.2@*Ito yusuke 1.Igusa yuji 1,Kobayashi kazuaki 1,Arai tetuji 1,Sato tetsuya 1,Sato syouji 2 |
|
8 |
Formation of Amorphous Carbon Films for Field Emission Devices Using Supermagnetron Sputter |
Shizuoka Univ., Res. Inst. Elect. 1@*Kinoshita Haruhisa 1, Kubota Masaya 1, Ohno Genji 1 |
| ’ |
9 |
Analysis of Hydrogen Distribution in Diamondlike Carbon Films by ERDA and XPS |
Hiroshima Univ.1, Toyo Advanced Technologies@*Takabayashi Susumu1, Okamoto Keishi1,2, Motoyama Hiroaki1, Nakatani Tatsuyuki2, Sakaue Hiroyuki1, Takahagi Takayuki1 |
| ’ |
10 |
Surface Functional Group Analysis of Diamondlike Carbon Films by XPS |
Hiroshima Univ. 1@*Motoyama Hiroaki 1, Takabayashi Susumu 1, Sakaue Hiroyuki 1, Suzuki Hitoshi 1, Takahagi Takayuki 1 |
| ’ |
11 |
Iodine doping of a-C:H films prepared by RF sputtering (IV) |
Ryukyu Univ 1@*Tonoe Haruki 1,Yamazato Masaaki 1,Higa akira 1 |
|
12 |
Microstructure and photoconductivity of DLC film deposited by pulsed discharge plasma CVD |
Chubu Univ. @*Noda Mikio 1, Yoshida Takuya 1, Hujimura Sadahito 1, Umeno Masayoshi 1 |
| ’ |
13 |
Microstructure of carbon film deposited by pulsed discharge plasma CVD using catalysis |
Chubu Univ.@ Sadahito Fujimura, Masahiro Matsushima, Golap Karita, Mikio Noda , Masayoshi Umeno |
| ’ |
14 |
Formation of porous carbon film by pulsed discharge plasma CVD using catalysis |
Chubu Univ.@Masahiro Matsushima, Sadahito Fujimura, Mikio Noda,Hideo Uchida, Masayosi Umeno |
| ’ |
15 |
Trans-disciplinary Approach to Computational Structural Analysis and Experiment in Diamond-like Carbon |
Grad. Sch. Eng., Tohoku Univ. 1, NICHe, Tohoku Univ. 2@*Takanori Kuriaki 1, Yusuke Morita 1, Tasuku Onodera 1, Ai Suzuki 2, Sahnoun Riadh 1, Michihisa Koyama 1, Hideyuki Tsuboi 1, Nozomu Hatakeyama 1, Akira Endou 1, Hiromitsu Takaba 1, Carlos A. Del Carpio 1, Momoji Kubo 1, Akira Miyamoto 1,2 |
| ’ |
16 |
TEM observation of DLC films prepared by T-shape filtered-arc-deposition. |
Toyohashi Univ. Technol. 1, Itoh Optical Industrial Co., Ltd. 2, Onward Ceramic Coating Co., Ltd. 3, Kanagawa Indust. Technol. R. C. 4, Hitachi Tool Eng., Ltd. 5, Indust. Inst. of Ishikawa 6
@*Tanoue Hideto 1, Kamiya Masao 1, 2, Oke Shinichiro 1, Suda Yoshiyuki 1, Takikawa Hirofumi 1, Taki Makoto 3, Hasegawa Yushi 3, Kumagai Masao 4, Kano Makoto 4, Ishikawa Takeshi 5, Yasui Haruyuki 6
|
|
17 |
Observation of amorphous hydrogenated carbon films etched by hydrofluoric acid |
Nagaoka Univ. Tech. 1@*Matsuda Kuniyuki 1, Ohshio Shigeo 1, Akasaka Hiroki 1, Saitoh Hidetoshi 1 |
| ’ |
18 |
Evaluation of dielectric constant of a-C:H films prepared by RF sputtering |
Ryukyu Univ. 1@*Mizuma Ippei 1, Nagahama Kazuyuki 1, Yamazato Masaaki 1, Higa Akira 1
|
|
19 |
Composition control of doped DLCs and their structural change at high temperature |
Saitama University, Graduate School of Science and Engineering 1, RIKEN 2@*Hirakata Fumio 1,Kobayashi Tomohiro 2,Meguro Takashi 2,Miura Hiroshi 1,Kurokawa Hideki 1 |
|
20 |
Heat-Test of DLC Films Prepared by T-shape Filtered Arc Deposition System |
Toyohashi Univ. Technol. 1, Itoh Opt. Indust. Co., Ltd. 2, Onward Ceramic Coating Co., Ltd. 3, Kanagawa Indust. Technol. R. C. 4, Hitachi Tool Engineering, Ltd. 5, Industrial Research Institute of Ishikawa 6@*Kamiya Masao 1,2, Tanoue Hideto 1, Oke Shinichiro 1, Suda Yoshiyuki 1, Takikawa Hirofumi 1, Taki Makoto 3, Hasegawa Yushi 3, Kumagai Masao 4, Kano Makoto 4, Ishikawa Takeshi 5, Yasui Haruyuki 6 |
| ’ |
21 |
Estimation of thermal decomposition on amorphous carbon films measured by thermal desorption method |
Nagaoka Univ. of Tech.@Akasaka Hiroki 1, Kawaguchi Shinnosuke 1, Ohshio Shigeo 1, Saitoh Hidetoshi 1 |
| 6.2 Carbon Films |
| Sept. 3 |
| 3a-P6-@/ II |
| |
Poster Session
3a-P6-1`21@9:30`11:30 |
|
1 |
Optical and Electrical properties of amorphous carbon films |
Chubu Univ.1@*Adhikari Sudip1, Ghimire Dilip1, Kalita Golap1, Aryal Hareram1, Uchida Hideo1, Umeno Masayoshi1 |
| £ |
2 |
Boron incorporated amorphous carbon/p-Si heterojunction |
Chubu Univ.1@Aryal Hareram1, Adhikari Sudip1, Ghimire Dilip1, Kalita Golap1, Uchida Hideo1, Sugai Hideo1, Umeno Masayoshi1 |
| £ |
3 |
Enhancement of amorphous crbon thin films by microwave surfacewave plasma CVD |
Chubu Universoty@Ghimire Dilip Chandra 1, Adhikari Sudip 1, Aryal Hareram Dilip Chandra 1, Adhikari Sudip 1, Aryal Hareram 1, Kalita Golap 1, Uchida Hedio Aryal Hareram 1, Kalita Golap 1, Uchida Hedio 1, Umeno Masayoshi 1 |
|
4 |
Etching of Si-incorporated DLC films by atomic hydrogen |
Hirosaki Univ.1, RIEC Tohoku Univ.2, Nagaoka Univ. Technol.3, CIR Tohoku Univ.4, Yamagata Univ.5@*Soushi Miura1, Hideki Nakazawa1, Hiroomi Sugita1, Yoshiharu Enta1, Maki Suemitsu2, Kanji Yasui3, Takashi Itoh4, Tetsuo Endoh2, Yuzuru Narita5, Masao Mashita1 |
|
5 |
Estimation of growth rate of DLC films in pulse plasma CVD method |
Matsushita Electric Works 1,Nagoya Univ. 2@*Fujimoto Shinji 1,2,Ohtake Naoto 2 |
|
6 |
Tribological and antithrombogenicial Properties of Diamond-like Carbon coated Balloon Catheter |
Nagoya University 1@Ohishi Ryusuke 1, Nakagawa Taku 1, Ohtake Naoto 1, Takai Osamu 1 |
|
7 |
Protein adsorption behavior on hydrogenated amorphous carbon film |
Nagaoka Univ. Tech. 1@*Naoki Gawazawa 1, Sin-ichi Kishimoto 1, Shigeo Ohshio 1, Hiroki Akasaka 1, Hidetoshi Saitoh 1 |
|
8 |
Effect of post-annealing on the growth of deep UV luminous hexagonal boron nitride (II) |
Nat. Inst. Materials Science 1@Osamu Tsuda 1, Kenji Watanabe 1, Takashi Taniguchi 1 |
|
9 |
Characterization of plasma produced by pulsed laser ablation of h-BN target |
JAEA@Ohba Hironori 1, SaekiMorihisa 1, Esaka Fumitaka 1, Yamada Yoichi 1, Yamamoto Hiroyuki 1, Yokoyama Atsushi 1 |
|
10 |
Characterization of boron nitride thin films synthesized by RF magnetron sputtering |
Osaka Univ. 1@*Sota Hiroshi 1, Shinomori Naoya 1, Kimura Chiharu 1, Aoki Hidemitsu 1, Sugino Takashi 1 |
|
11 |
The effect of oxygen-plasma treatments on amorphous carbon nitride films |
National Defense Academy 1@*Kikuchi Shunsuke 1, Aono Masami 1, Kitazawa Nobuaki 1, Watanabe Yoshihisa 1 |
|
12 |
Mechanical properties of amorphous boron nitride films prepared by nanopulse plasma CVD |
Tokyo Tech. 1, JSPS 2, Nagoya Univ.@*Saito Masanori 1,2, Murakami Hiroya 1, Ohtake Naoto 3 |
|
13 |
Decomposition process of BrCN with microwave discharge flow of Ar (1) Generation of CN(X) state |
Nagaoka Univ. of Tech. 1@*Wada Akira 1, Araki Hitoshi 1, Ito Haruhiko 1 |
|
14 |
Decomposition process of BrCN with MW discharge flow of Ar (2) Generation of CN(B) state |
Nagaoka Univ. of Tech.@Fukuhara Sho 1,Araki Hitoshi 1,Wada Akira 1,Ito Haruhiko 1 |
|
15 |
Sticking probability of CN radicals |
Nagaoka Univ.ofTech 1,@*Araki Hitoshi 1,Wada Akira 1,Saitoh Hidetoshi 1,Ito Haruhiko 1 |
|
16 |
Fabrication of a-CNx:H for hydrogen strage |
Nagaoka Univ.ofTech 1,@*Morohashi Ryu 1,Takahata Tomokazu 1,Ono Hiroki 1,Saitoh Hidetoshi 1,Ito Haruhiko 1 |
|
17 |
Analysis of dissociative excitation reaction of C2H2 with the ECR plasmas of rare gases |
Nagaoka Univ. Tech. 1@*Koshimura Katsuaki 1,Hayashi Hiroki 1,Saitoh Hidetoshi 1,Ito Haruhiko 1 |
|
18 |
Formation of a-SiC films by microwave discharge flow of Ar |
Nagaoka Univ.ofTech. 1@*Ohgaki Takeshi 1,Shinohara Akio 1,Saitoh Hidetoshi 1,Ito Haruhiko 1 |
|
19 |
RF power dependence of characteristics of Methyl-BN film using TMAB gas |
Osaka Univ. 1@*Masuzumi Takuroh 1,Hara Makoto 1,Mazumder M.K. 1,Kimura Chiharu 1,Aoki Hidemitsu 1,Sugino Takashi 1 |
|
20 |
Influence of Cu Electroplating Solution on Boron Carbon Nitride (BCN) Film |
Osaka Univ.1, Daikin Industries,Ltd.2@Daisuke Watanabe1,2, Hidemitsu Aoki1, Makoto Hara1, M.K.Mazumder1,
Takuro Masuzumi1, Naoki Ooi1, Chiharu Kimura1 and Takashi Sugino1
|
|
21 |
Investigation of metallic layer on BCN film for interconnection process |
Osaka Univ. 1@*Hara Makoto 1, Masuzumi Takuro 1, Motaharul Kabir Mazumder 1, Watanabe Daisuke 1, Kimura Chiharu 1, Sugino Takashi 1 |
| 6.3 Oxide Electronics |
| Sept. 2 9:00`17:30 |
| 2a-J-@/ II |
| ’ |
1 |
Towards the downsizing limit of oxide resistance switching device |
Univ. of Tokyo 1, RIKEN 2@Takeshi Yajima 1, Kohei Fujiwara 2, Yoshinobu Nakamura 1, and Hidenori Takagi 1, 2 |
| ’ |
2 |
Electrostatic carrier doping to Sr2MnO4 probed with electromodulation spectroscopy |
CMRG-RIKEN 1, WPI-AIMR, Tohoku Univ. 2, Dept. Appl. Phys., Univ. of Tokyo 3@Masao Nakamura 1, Masashi Kawasaki 1,2, Yoshinori Tokura 1,3 |
| ’ |
3 |
Control of Grain Sizes and the Low-Field Magnetoresistance in Polycrystalline La0.7Sr0.3MnO3 Films on Si Substrates. |
Nagoya Univ. 1,Nagoya Univ. VBL 2,Toyota Phys & Chem. Res. Inst@Fumiya Kato 1,Takehiro Oka 1,J Zhong 2,Yoichi Takeda 1,Hidefumi Asano 1,Matsui Matsui 3 |
|
4 |
Importance of trap-controlled space-charge-limited current in resistance switching at Al/Pr0.7Ca0.3MnO3 interfaces |
The Univ. of Tokyo 1,MSL, Tokyo Inst. of Tech. 2,Inst. for Solid State Physics 3,Graduate School of Frontier Sciences, The Univ. of Tokyo 4,JST-CREST 5@Harada Takayuki 1,Ohkubo Isao 1,Tsubouchi Kenta 1,Kumigashira Hiroshi 1 5, Ohnishi Tsuyoshi 3,Lippmaa Mikk 3,Matsumoto Yuji 2,Koinuma Hideomi 4 5,Oshima Masaharu 1 5 |
| ’ |
5 |
Metal electrode dependence of I-V characteristics in metal/PCMO Schottky contacts (3) |
The Univ. of Tokyo 1,MSL, Tokyo Inst. of Tech. 2,Inst. for Solid State Physics 3,Graduate School of Frontier Sciences, The Univ. of Tokyo 4,JST-CREST 5@Harada Takayuki 1,Ohkubo Isao 1,Kumigashira Hiroshi 1 5, Ohnishi Tsuyoshi 3,Matsumoto Yuji 2,Lippmaa Mikk 3,Koinuma Hideomi 4 5,Oshima Masaharu 1 5 |
| |
|
Break 10:15`10:30 |
|
| ’ |
6 |
In situ observation of Pr0.7Ca0.3MnO3 by transmission electron microscopy |
Hokkaidou@Univ. 1@Takashi Fujii 1, Hiromichi Kaji 1, Hirofumi Kondo 1, Kouichi Hamada 1, Masashi Arita 1, Yasuo Takahashi 1 |
| ’ |
7 |
Resistance switching characteristics by pulse voltage observed in Pr0.7Ca0.3MnO3 devices |
Hokkaido Univ. 1@*Hirofumi Kondo 1, Hiromichi Kaji 1, Takashi Fujii 1, Kouichi Hamada 1, Masashi Arita 1, Yasuo Takahashi 1 |
| ’ |
8 |
Interface and Annealing Dependence of the Physical Properties of LaMnO3/SrTiO3 Heterostructures |
Univ. of Tokyo 1, Cornell Univ. 2, Chungnam National Univ. 3, JST 4@*Yajima Takeaki 1, Hikita Yasuyuki 1, Higuchi Takuya 1,2, Song Jong Hyun 3, Muller David 2, Hwang Harold 1,4 |
| ’ |
9 |
Composition dependence of Schottky barrier height for La1-xSrxMnO3/Nb:SrTiO3 heterojunctions |
The University of Tokyo 1-2, JST-CREST 3, and UT-SRRO 4@*Makoto Minohara 1, Ryutaro Yasuhara 2, Hiroshi Kumigashira 2-4, and Masaharu Oshima 1-4 |
| ’ |
10 |
Epitaxial growth of ilmenite MnTiO3 thin films with ferrotoroidic structure |
JST-ERATO 1, RIKEN-CMRG 2, WPI-IMR Tohoku Univ. 3, Univ. of Tokyo 4@*Toyosaki Hidemi 1, Kawasaki Masashi 2 3, Tokura Yoshinori 1 2 4 |
| ’ |
11 |
Crystal growth for perovskite oxide thin films in ELAMOD process |
AIST 1, ISSP 2@Nakajima Tomohiko 1, Tsuchiya Tetsuo 1, Ichihara Masaki 2, Nagai Hideaki 1, Kumagai Toshiya 1 |
| |
|
Lunch 12:00`13:00 |
|
| 2p-J-@/ II |
| ’ |
1 |
Crystal growth and characterization analysis of oxide thin films on nanopatterning glass substrate. |
Tokyo Inst.Of Tech. 1,TOSHIMA MFG Co.,Ltd. 2@*Sugimoto Yuki 1,Akita Yasuyuki 1,Hosaka Makoto 1,Tsuchimine Nobuo 2,Yoshimoto Mamoru 1 |
| £’ |
2 |
Ultra Accelerated Quantum Chemical Molecular Dynamics Study on Electronic and Electrical Properties of Non-doped and Ca-doped SrCu2O2. |
Grad.Sch. Eng., Tohoku Univ.1,NICHe, Tohoku Univ.2@Chen Lv1, Kei Ogiya1, Ai Suzuki1, Riadh Sahnoun1, Michihisa Koyama 1, Hideyuki Tsuboi1, Nozomu Hatakeyama1, Akira Endou1, Hiromitsu Takaba1, Carlos A. Del Carpio1, Momoji Kubo1,@Akira Miyamoto1, 2 |
| ’ |
3 |
Effects of post-annealing on carrier transport properties of p-type Cu2O epitaxial films |
MSL, Tokyo Tech. 1, ERATO-SORST, JST 2,FRC, Tokyo Tech. 3@*Kosuke Matsuzaki 1, Kenji Nomura 2 , Hiroshi Yanagi 1, Toshio Kamiya 2, Masahiro Hirano 2,3, Hideo Hosono 1,2,3 |
| ’ |
4 |
Epitaxial growth and thin film transistor of 5s-based p-type oxide semiconductor, SnO |
MSL Tokyo tech. 1, ERATO-SORST/JST 2, FRC Tokyo tech 3@Ogo Yoichi 1, Hiramatsu Hidenori 2, Nomura Kenji 2, Yanagi Hiroshi 1, Kamiya Toshio
1,2, Hirano Masahiro 2,3, Hosono Hideo 1,2,3 |
| ’ |
5 |
Reproducible diode polarity switching in Pt/TiOx/Pt Schottky diode |
NRI-AIST 1,CREST-JST 2,NIRC-AIST@SHIMA Hisashi 1,2,Zhong Ni 1,2,AKINAGA Hiroyuki 1,2,3 |
| ’ |
6 |
Photocatalytic synthesis of Silver-Oxide Clathrate Ag6O8AgNO3 |
Tokyo Institute of Technology 1, Univ. of Maryland 2, Tokyo Univ. 3,4, NIMS 5@*Tanaka Ryohei 1, Takahashi Ryota 2, Katama Masao 3, Koinuma Hideomi 4,5 Takeuchi Ichiro 2, Matsumoto Yuji 1 |
| ’ |
7 |
Growth Mechanism of Ferroelectric Bi4Ti3O12 Nano-plate via Flux-mediated Epitaxy |
MSL Tokyo Tech 1, Maryland Univ. 2@*Akira Imai 1, Ryota Takahashi 2, Ichiro Takeuchi 2 , Yuji Matsumoto 1 |
| ’ |
8 |
Epitaxial thin films of SrFeO2 with FeO2 infinite layers by CaH2 low temperature reduction |
Inist. for Chem. Research, Kyoto Univ. 1, JASRI/SPring-8 2,Dep. of Chem., Grad. Sch. Sci., Kyoto Univ. 3@Satoru Inoue 1, Masanori Kawai 1, Yuichi Shimakawa 1,Masaichiro Mizumaki 2,Naomi Kawamura 2,Takashi Watanabe 3,Yoshihiro Tsujimoto 3,Hiroshi Kageyama 3,Kazuyoshi Yoshimura 3 |
| |
|
Break 15:00`15:15 |
|
| ’ |
9 |
Effect of Nb Doping on the Photocarrier Injection Process in SrRuO3/Nb:SrTiO3 Heterojuncions |
University of Tokyo 1, JST 2@*Ota Yuichi 1, Kozuka Yusuke 1, Hikita Yasuyuki 1, Hwang Harold 1,2 |
| ’ |
10 |
High Electron Mobility in Lightly Doped n-type SrTiO3 Thin Films Deposited by Pulsed Laser Deposition |
Univ. of Tokyo 1, ISSP 2, JST 3@*Kozuka Yusuke 1, Ohnishi Tsuyoshi 2, Lippmaa Mikk 2, Hikita Yasuyuki 1, Hwang Harold 1,3 |
| ’ |
11 |
Synthesis and electrical properties of electron-doped Ruddlesden-Popper homologous series thin films |
IMR Tohoku Univ. 1, Toyota Motor Corporation 2, WPI-AIMR Tohoku Univ. 3, JST-CREST 4@Okude Masaki 1, Ohtomo Akira 1, Kita Takuji 2, Kawasaki Masashi 1,3,4 |
|
12 |
Epitaxial Growth of SrTiO3 thin films on g-Al2O3/Si(111) Substrates by an EB evaporation |
Toyohashi Univ. of Tech. 1, JST-CREST 2@*Torii Yasumasa 1, Akai Daisuke 1, Sawada Kazuaki 1 2, Ishida Makoto 1 2 |
|
13 |
Structure and thermoelectric properties of the PLD-grown TiO2/SrTiO3 single crystal heterointerface |
Nagoya Univ 1,@*Atsushi Kume 1,Hiromichi Ohta 1,Kunihito Koumoto 1, |
|
14 |
Seebeck coefficient of electric-field induced two dimensional electron gas in SrTiO3 (2) |
Nagoya Univ. 1, Toyota Central R&D Labs., Inc. 2, ERATO-SORST, JST 3, Tokyo Tech 4, 5@*Yoshikawa Akira 1,Kurita Daisuke 1,Ohta Hiromichi 1,Asahi Ryouji 2,Masuoka Yumi 2,Nomura Kenji 3,Hosono Hideo 3,4,5,Koumoto Kunihito 1 |
|
15 |
Influence of interface layers on the dielectric properties of DyScO3 capacitors |
Univ. of Tokyo 1, ISSP 2@*Abe Takuya 1, Nishio Kazunori 1, Ohnishi Tsuyoshi 2, Mikk Lippmaa 1,2 |
|
16 |
Channel current relaxation crystal SrTiO3-Field Effect Transistors |
Dept.Adv.Mater.Sci. Univ.Tokyo 1, ISSP 2@*Nishio Kazunori 1,2, Abe Takuya 1,2, Ohnishi Tsuyoshi 2, Lippmaa Mikk 1,2 |
|
17 |
Magnetic properties of EuTiO3 epitaxial films |
Univ. of Tokyo 1, Tohoku Univ. 2, KAST 3@*Hatabayashi Kunitada 1, Hitosugi Taro 2,3, Hirose Yasushi 1,3, Shimada Toshihiro 1,3, Hasegawa Tetsuya 1,3 |
| 6.3 Oxide Electronics |
| Sept. 3 9:00`17:45 |
| 3a-J-@/ II |
|
1 |
Photocatalytic properties of Titanium Oxide Films prepared by Vacuum deposition method |
Kyusyu Kyoritsu Univ.1, Kyushu Institute of Technology 2, Okuma Eng.3 @Nouchi Norimoto 1, Ouno Terumasa 2, Shoji Fumiya 1, Yamaguchi Katuyoshi 3 |
|
2 |
Preparation of crystalline TiO2 films by DC pulse magnetron sputtering |
Kitagawa ind.1 Chubu Univ.2@Furuta Ken1, Taga Yasunori2
|
|
3 |
Preparation of photcatalytic thin films by fs-PLD method
|
Chubu Univ1, Kitagawa ind.2@Yamaguchi Kazunori1, Taga Yasunori1, Furuta Ken2 |
|
4 |
Evaluation of characteristics of TiO2-ZnO photocatalyst for methyl mercaptan removal |
Keio Univ. 1@*Sakai Asami 1, Shiratori Seimei 1 |
|
5 |
Optical property of oxygen vacancies controlled anatase TiO2 film |
Sophia Univ. 1@*Enomoto Shogo 1, Hashimoto Taki 1, Ema Kazuhiro 1, Kunugita Hideyuki 1, Sakama Hiroshi 1 |
|
6 |
The relationships between the film structure and photocatalytic characteristic of TiO2 thin film deposited under oblique incidence by oxygen ion assisted reactive evaporation method. |
Tokyo Polytechnic Univ.@T.Sakai, N.Sato, S.Mochiduki, D.Ishihara, K.Kobayashi, T.Maeda, Y.Hoshi |
| |
|
Break 10:30`10:45 |
|
| £ |
7 |
Investigation of optical emission spectrum from TiO2 reactive sputtering type oxygen radical source |
Tokyo Polytechnic Univ@*Hao Lei 1, Daiki Ishihara 1, Meihan Wang 1, Yoichi Hoshi 1, Yutaka Sawada 1 |
|
8 |
The dependence property of TiO2 film thickness deposited by oxygen ion assisted reactive evaporation method |
Tokyo Polytechnic Univ.@S.Mochiduki, T.Sakai, D.Ishihara, N.Sato, K.Kobayashi, T.Maeda, Y.Hoshi |
|
9 |
Structure and photocatalytic properties of TiO2
films deposited by high rate reactive sputtering |
Tokyo Polytechnic University@*Daiki Ishihara 1, Katuya Ueda 1, Testuya Sakai 1,Noriyuki Sato 1, Syohei Mochiduki 1, and Yoichi Hoshi 1
|
|
10 |
Photocatalytic Lithography using Oxidic Nano-IslandsV |
Takamatsu NCT 1,Osaka PCT 2@*Kuroda Mami 1,Okano Hiroshi 1,Maeda Atsushi 2 |
|
11 |
Water Molecule Adsorption to the Surface of YVO4 Photo-catalyst and the Electronic Structure Properties |
NIMS@*Oshikiri Mitsutake |
| |
|
Lunch 12:00`13:00 |
|
| 3p-J-@/ II |
|
1 |
Highly Conductive Nb:TiO2 Transparent Conducting Thin Films Crystallized in Ambient Atmosphere |
KAST 1, Univ. of Tokyo 2, Tohoku Univ. 3@Shoichiro Nakao 1,2, Taro Hitosugi 1,3, Naoomi Yamada 1, Junpei Kasai 1, Yasushi Hirose 1,2, Toshihiro Shimada 1,2, Tetsuya Hasegawa 1,2, |
|
2 |
Improved thermal endurance in O2 atmosphere of conductivity of Nb:TiO2 thin films with lightly Nb doped protection layer |
KAST 1, Univ. of Tokyo 2, Tohoku Univ. 3@Shoichiro Nakao 1,2, Taro Hitosugi 1,3, Naoomi Yamada 1, Junpei Kasai 1, Yasushi Hirose 1,2, Toshihiro Shimada 1,2, Tetsuya Hasegawa 1,2, |
|
3 |
Deposition of anatase Nb-doped TiO2 transparent conducting films on GaN template by sputtering technique |
KAST 1 , WPI-AIMR, Tohoku Univ. 2, Univ. Tokyo 3, TOYODA GOSEI CO., LTD. 4@*Kasai Junpei 1, Hitosugi Taro 1,2, Yamada Naoomi 1, Nakao Shoichiro 1,3, Hirose Yasushi 1,3, Shimada Toshihiro 1,3, Moriyama Miki 4, Hasegawa Tetsuya 1,3 |
|
4 |
Effects of ICP high-density Ar plasma annealing for Nb-doped TiO2 films on glass substrates by reactive sputtering (II) |
Tokai Univ.1@*Hojo Mika 1,Okimura Kunio 1 |
|
5 |
Characterization of optical absorption and ultrafast carrier dynamics of Au nanoparticles adsorbed onto nanostructured TiO2 films |
Univ. Electro-Commun., Dept. Appl. Phys. & Chem. 1, Univ. Chuo, Appl. Chem. 2, JST 3 @*Shen Qing 1, Tamura Satoru 1, Suganuma Rihito 1, Katayama Kenji 2, Sawada Tsuguo 3, Toyoda Taro 1 |
|
6 |
Reflection Spectra of TiO2 Inverse Opal Structures with CdSe Quantum Dot Adsorption |
Dept. Appl. Phys. & Chem. Univ. Electro-Commun. 1@Ayuzawa Yasumasa,Diguna Lina J,Qing Shen,*Toyoda Taro. |
|
7 |
Ultrafast Carrier Dynamics Characterization of TiO2 Electrodes with Dye Adsorption using Transient Grating Technique |
Univ. Electro-Commun., Dept. Appl. Phys. & Chem. 1,
Univ. Chuo, Appl. Chem. 2,
JST.3@Suganuma Rihito 1,Shen Qing 1,Katayama Kenji 2, Sawada Tuguo 3,*Toyoda Taro 1 |
|
8 |
Photoelectrochemical properties of Rutile and Anatase-Type Composite TiO2 Electrodes sensitized with CdSe quantum dots |
Univ. Electro-Commun., Dept. Appl. Phys. & Chem. 1,Toho Titanium Co., Ltd 2@*Yoshida Yukihisa 1,Shen Qing 1,Sakai Hideki 2,Toyoda Taro 1 |
|
9 |
Optical characteristic of TiO2 nanotube electrodes prepared by anodic oxidation |
Dept. Appl. Phys. & Chem., Univ. Electro-Commun. 1@Tamura Satoru 1 Yamada Akari 1 Shen Qing 1 *Toyoda Taro 1 |
| |
|
Break 15:15`15:30 |
|
|
10 |
The effect of oxygen vacancies for super hydrophilic of TiO2 thin films |
Tokai Univ. 1@*shimamura Jun 1,Kuwahata Hiroshi 1 |
|
11 |
Synthesis of rutile-type Co-doped TiO22 nanocrystals |
Kyoto Inst. of Technology 1,Wakayama Univ. 2@*Nakano Hiroyuki 1,Hasuike Noriyuki 1,Kisoda Kenji 2,Nishio Koji 1,Isshiki Toshiyuki 1,Harima Hiroshi 1 |
|
12 |
Second harmonic generation of TiO2 heteroepitaxial thin film |
Univ. of Tokyo 1, KAST 2@Yuzo Okamura 1, Yasushi Hirose 1,2, Takumi Otsuki 1, Toshihiro Shimada 1,2, Tetsuya Hasegawa 1,2 |
|
13 |
Direct characterization of electron diffusion length in TiO2 nano-crystalline thin layer by dye-sensitized solar cell |
Univ.Electro-Comm.@*Gonda Tomohiro 1,Nada Masahiro 1, Kobayashi Naoki 1 |
|
14 |
Photoconduction and AC Conduction of Titanium Oxide Film |
Aichi Univ. of Tech. 1,Gifu Univ. 2@*Sakaguchi Koichi 1,Hatanaka Yoshinori 1,Shimakawa Koichi 2 |
|
15 |
Electronic Structures of Interface and Surface of TiO2/LaAlO3 thin film Probed by High-Resolution Soft-X-Ray Spectroscopy |
Tokyo Univ. Sci. 1, U.C.Berkeley 2@*Higuchi Tohru 1, Nakamura Akira 1, Takano Yusuke 1, Minamikawa Masaki 1, Ishii Yukihiro 1. Hattori Takeshi 1, Jinghua Guo 2 |
|
16 |
Photocatalyst and Electronic Structures of TiO2/glass Thin Films Prepared by RF Magnetron Sputtering Using Oxygen Radical |
Tokyo University of Science 1@*Takano Yusuke 1, Higuchi Tohru 1, Nakamura Akira 1, Ishii Yukihiro 1, Hattori Takeshi 1 |
|
17 |
Electrochromism of IZO and the Accompanied Modification of Its Electric Coduction |
NHK Sci. & Tech. Res. Labs. 1,Tokai Univ. 2@Sato Ryuji 1,*Sugiyama Masaaki 2,Kawamura Norikazu 1,Kunugi Yoshihito 2 |
|
18 |
Superconductivity and maicrosutructure of InO-ZnO thin films |
National Inst. for Material Science1, Dept. of Phys. Kyushu univ.2 Center for Research and Advancement in High education Kyushu univ.3, Advanced Technology Research Laboratories Idemitsu Kosan Co., Ltd@*Makise Kazumasa1, Mitshshi Kazutaka1, Furuya Kazuo1, Yamaguti Takashi2 , Takashi Yamaguti2 ,Takada Satoshi2, Ogura Synsuke2, Yamada Kazumasa 2, Shinozaki Bunjyu2, Kokubo Nobuhito3, Yano Koki4, Nakamura Hiroaki4 |
| 6.3 Oxide Electronics |
| Sept. 4 9:00`17:30 |
| 4a-J-@/ II |
|
1 |
Examination of ion bombardment effect of ITO Thin Films Deposited by the Distance between Target and Substrate |
Niigata Univ 1,Tokyo Institute of Polytechnics 2@*Niki Masato 1,Itou Yoshihiro 1,Takahashi Saki 1,Shimizu Hidehiko 1,Iwano Haruo 1,Kawakami Takahiro 1,Hoshi Youichi 2 |
|
2 |
Transparent conductive film prepared by IBAD and its properties of annealing |
Gifu Univ. 1,S.F.C. Co., Ltd. 2@Kitagawa Akihiko 1,Kondou Akihiro 1,Tanaka Yasuhito 2 |
| ’ |
3 |
Electrical properties of indium-tin-oxide thin films deposited by spray CVD on stripe-patterned Si substrates |
Tokyo Polytechnic Univ. 1, Tokyo Inst. Technol. 2, Kanagawa Industrial Technol. Cent. 3@*Kondo Takeshi 1, Funakubo Hiroshi 2, Akiyama Kensuke 3, Enta Hiroyuki 1, Seki Yoshiyuki 1, Wang Meihan 1, Uchida Takayuki 1, Sawada Yutaka 1 |
|
4 |
Preparation and characterization of ITO film grown by ELAMOD using nano-particle. |
AIST 1, Asahi Kasei Corp. 2@T. Tsuchiya 1, F. Yamaguchi 2, I. Morimoto 2, T. Nakajima 1, and T. Kumagai 1 |
|
5 |
Deposition of Mn-doped ITO films on flexible polymer substrates (II) |
Kyoto Univ. 1@Shinichi Isozaki 1,Kohei Tanabe 1,Toshihiro Nakamura 1,Kunihide Tachibana 1 |
| |
|
Break 10:15`10:30 |
|
|
6 |
Epitaxial grwoth and transport properties of transparent conducting SnO2 thin films with Ta doping |
JST-ERATO 1, RIKEN-CMRG 2, WPI-IMR Tohoku Univ. 3, Univ. of Tokyo 4@*Toyosaki Himide 1, Kawasaki Masashi 2 3, Tokura Yoshinori 1 2 4 |
|
7 |
Characteristic of AZO Thin Films Deposited by Sputter-Beam Deposition Method |
Niigata Univ 1, Tokyo polytechnic Univ 2@Shimomura Takeharu 1, Honma Takuya 1, Satou Kaoru 1, Shimizu Hidehiko 1, Iwano Haruo 1, Hoshi Youichi 2 |
| ’ |
8 |
Fabrication of polycrystalline Al doped ZnO (AZO) thin films with low resistivity by a hot cathode plasma sputtering method |
Kyushu Kyoritsu Univ. 1@Kono Akihiko 1, Nouchi Norimoto 1, Shoji Fumiya 1 |
|
9 |
Effects of hydrogen plasma exposure on ZnO transparent conductive oxide fabricated by sol-gel process (IV) |
Grad. School of Eng. Science, Osaka Univ. 1@*Kawabe Tomoyuki 1, Kubota Yuu 1, Sobajima Yasushi 1, Toyama Toshihiko 1, Matsuda Akihisa 1, Okamoto Hiroaki 1 |
|
10 |
Characteristic of transparent conductive In-Ga-Zn oxide film deposited on the fused quartz by PLD method |
Tokushima Univ. 1,Takuma National College of Technology 2@*Tsuduki Takashi 1,Tominaga Kikuo 1,Maruyama Takayuki 1,Mikawa Michio 2,Moriga Toshihiro 1 |
| ’ |
11 |
Properties of IGZO films deposited by dc magnetron sputtering with H2O introduction |
Aoyama Gakuin Univ. 1,Canon Inc. 2@*Aoi Takafumi 1,Daisuke Watanabe 1,Yasushi Sato 1,Ryo Hayashi 2,Hideya Kumomi 2,Yuzo Shigesato 1 |
| |
|
Lunch 12:00`13:00 |
|
| 4p-J-@/ II |
|
1 |
Epitaxial growth of a new Iridium oxide@LiIr2O4 |
ToKyo Univ. 1, RIKEN 2@Hiromichi Kuriyama 1,2, Jobu Matsuno 2, Hidenori Takagi 1,2 |
|
2 |
Fabrication and evaluation of Zirconium Phosphate thin film |
Grad. Sch. Sci. Tech. Keio Univ.@*Kosaki Yasuhiro 1, Shiratori Seimei 1 |
|
3 |
Preparation of Three-Dimensional Microstructured Highly Crystalline Na2W4O13 Thin Films |
Shinshu Univ. 1,Osaka Inst. Tech. 2@*Maki Fujisawa 1,Lee SunHyung 1,Katsuya Teshima 1,Syuji Fujii 2,Takaomi Suzuki 1,Shuji Oishi 1 |
|
4 |
Epitaxial growth of A-site ordered SmBaMn2O6 thin films on SrTiO3(001) substrates by a pulsed laser deposition method |
RCAST, The Univ. of Tokyo 1, CREST-JST 2@Kubo Yugo 1, *Ogimoto Yasushi 1,2, Miyano Kenjiro 1,2 |
|
5 |
Preparation for epitaxial LaNiO2 thin films by reducing LaNiO3 thin films with CaH2 |
ICR, Kyoto Univ. 1@*Kawai Masanori 1, Inoue Satoru 1, Monika Iwanowska 1, Ichikawa Noriya 1, Shimakawa Yuichi 1 |
|
6 |
Coincidence Site Lattice on Polar Coordinate System: case of MgO |
Kanagawa Ind. Tech. Center 1, Tokyo Inst. of Tech. 2@* Satoru Kaneko 1, Kensuke Akiyama 1, Teiko Kadowaki 1, Yasuo Hirabayashi 1, Hiroshi Funakubo 2, Mamoru Yoshimoto 2 |
|
7 |
Preparation and characterization of metastable MgO(111) thin films |
MSL, Tokyo Tech 1, FRC, Tokyo Tech 2@*Susaki Tomofumi 1, Kumada Sho 1, Katase Takayoshi 1, Matsuzaki Kosuke 1, Miyakawa Masashi 2, Hosono Hideo 1,2 |
|
8 |
Fabrication of artificial (Fe,Mn)3O4 nano-wire structure using Mo lift-off AFM lithography technique with high controllability in their shape and positioning. |
Osaka Univ. ISIR Sanken 1@Kazuya Goto 1,Hidekazu Tanaka 1,Tomoji Kawai 1 |
| |
|
Break 15:00`15:15 |
|
|
9 |
Impedance spectroscopic study on (Pr,Ca)MnO3 films exhibiting resistance change |
Department of Electronic Science and Engineering, Kyoto Univ@* Yokoyama Takuya 1,Nakamura toshihiro 1,Tachibana Kunihide 1 |
|
10 |
Metal-insulator transition derived from the Ca-arrangement in layered cobalate, Ca0.33CoO2 |
Nagoya Univ. 1, CREST/JST 2, RIKEN/SPring8 3, JFCC 4, The Univ. of Tokyo 5, ERATO-SORST/JST 6, Tokyo Tech. 7,8@*Sugiura Kenji 1, Ohta Hiromichi 1,2, Ishida Yukiaki 3, Huang Rong 4, Ikuhara Yuichi 5, Nomura Kenji 6, Hosono Hideo 6-8, Koumoto Kunihito 1,2 |
|
11 |
Effect of Hydrostatic Pressure on the Electric-Field-Induced Resistance Switching of VO2 Planar-Type Junctions |
LEMA, Univ. F. Rabelais-Tours 1, JAIST 2@*Sakai Joe 1, Kurisu Makio 2 |
|
12 |
Ta interfacial layer introduced to electrode/oxide interface and low current operation of resistance random access memory |
NRI-AIST 1,Adv. Technol. Res. Labs. Sharp Corp. 2, NeRI-AIST 3@*SHIMA Hisashi 1,TAKANO Fumiyoshi 1,TAMAI Yukio 2,MURAMATSU Hidenobu 1,AKINAGA Hiroyuki 1,INOUE Isao 3 |
|
13 |
Thermal resistance at oxide/electrode interface for RRAM evaluated by thermo-reflectance method |
NRI-AIST 1,NMIJ-AIST 2,NIRC-AIST@SHIMA Hisashi 1,Shakhawat H Firoz 2,ISHIKAWA Kazuko 2,BABA Tetsuya 2,AKINAGA Hiroyuki 1,3 |
|
14 |
Nano structure of AlOX Film used for ReRAM |
NIMS 1,SHOEI CHEMICAL Inc. 2,GIT Japan Inc.3@*Nigo seisuke 1,Umeda naoki 2,Lee Jeungwoo 1,Nakano yosihiro 3,Kato seichi 1,Kitazawa hideaki 1,Kido giyuu 1 |
|
15 |
A Dominant Failure Mechanism in Data Retention Characteristics of NiO-ReRAM at High Temperature |
Tottori Univ. 1, Fujitsu Lab. 2@Kinoshita Kentaro 1, Kishida Satoru 1, Tsunoda Koji 2, Okano Ayumi 2, Yamazaki Yuichi 2, Fukano Tetsu 2, Aoki Masaki 2, Sugiyama Yoshihiro 2 |
|
16 |
Defect characterization in NiO by admittance spectroscopy of an NiO/n+-Si heterojunction |
Kyoto Univ.@Yusuke Nishi, Ryota Suzuki, Tsunenobu Kimoto |
|
17 |
A density functional theory-based investigation of materials for resistive RAM |
Osaka University 1 @*Hirofumi Kishi1, Tomoko Ohya1, Hiroshi Nakanishi1, Hideaki Kasai1 |
| 6.3 Oxide Electronics |
| Sept. 5 9:00`15:00 |
| 5a-J-@/ II |
|
1 |
Photo-irradiation effect on electric transport of anatase Ti1-xCoxO2-d thin films |
IMR, Tohoku Univ. 1, WPI-AIMR, Tohoku Univ. 2, CREST-JST 3@*Yamada Yoshinori 1, Fukumura Tomoteru 1, Ueno Kazunori 2, Nakano Masaki 1, Yamasaki Takashi 1,Makino Takayuki 2, Kawasaki Masashi 1,2,3 |
|
2 |
Photoluminescence properties of InNO thin films prepared by rf-sputtering |
Gunma Univ 1,@*Mori Masaki 1,Sasaoka takashi 1,Miyazaki Takayuki 1,Adachi sadao 1 |
|
3 |
Analysis of Carrier Distributions for a Fast Thin-Film Electrochromic Device by using Device Simulation |
Tokyo Univ. of Agri. & Tech. 1, Univ. of Southampton 2 @*Yoshimura Hideo 1 2, Tsuchiya Yoshishige 2, Mizuta Hiroshi 2, Koshida Nobuyoshi 1 |
|
4 |
Carrier density dependence of anomalous Hall effect in Eu1-xLaxTiO3 films |
CMRG RIKEN 1, Tohoku Univ. 2, ERATO-MF 3, Univ. of Tokyo 4@*Takahashi Kei 1, Kawasaki Masashi 1 2, Tokura Yoshinori 1 3 4 |
|
5 |
Lattice parameters of VO2 thin films prepared by PLD and ICP-assisted sputtering |
Tokai Univ. 1,Tours Univ. 2@*Koike Hideaki 1,Okimura Kunio 1,Sakai Joe 2 |
|
6 |
Effect of vanadium buffer layer on the growth of ICP-sputter VO2 film with M-I transition |
Tokai Univ. 1@*Toshimichi Nonaka 1, Kunio Okimura 1 |
| |
|
Break 10:30`10:45 |
|
|
7 |
The hall effect measurement in In2O3-ZnO polycrystalline high resistance films |
Dept. of Physics, Kyushu Univ.1, Center for research and advanced Centeral Research Laboratories, Kyushu Univ.2, Idemitu Kosan Co.@Kazumasa Yamada1, Takashi Yamaguchi1, Nobuto Kokubo, Bunjyu Shinokazi1, Kouki Yano3, Hiroaki Nakamura3 |
|
8 |
Preparetion of ZnO thin film transistor and Seebeck coefficient for the field induced channel |
Nagoya Univ. 1, Toyota Central R&D Labs., Inc. 2@*Nakagawa Shinichi 1, Yoshikawa Akira 1, Ohta Hiromichi 1, Asahi Ryoji 2, Masuoka Yumi 2, Koumoto Kunihito 1 |
|
9 |
Inprovement of the Ohmic contact between InTiO and p-GaAs |
Univ.ofElectro-Communications 1@*Kimura Hitoshi 1,Koizumi Atsushi 1,Ono Hiroshi 1,Uchida Kazuo 1,Nozaki Shinji 1 |
|
10 |
Electrical property of PEDOT:PSS/polar molecular layer/Oxide Schottky junctions |
IMR Tohoku Univ. 1, JST-CREST 2, WPI-AIMR Tohoku Univ. 3@Ryosuke Y. Gunji 1, Masaki Nakano 1, Astusi Tsukazaki 1, Akira Ohtomo 1,
Tomoteru Fukumura 1, Masasi Kawasaki 1,2,3
|
|
11 |
Electrical conductivity mechanism in Polycrystal HfO2 |
Tukuba Univ.1,NIMS.2@*Sugimura Sotaro1, Imai Motoharu2, Chikyou Toyohiro2, Uedono Akira1,
Hasunuma Ryu1, Yamabe Kikuo1 |
| |
|
Lunch 12:00`13:00 |
|
| 5p-J-@/ II |
|
1 |
Self-Alignment Thin-Film Transistor using Transparent Oxide Semiconductor |
Univ. of Toyama 1@*Hirouchi Yasumitsu 1, Yamagishi Akira 1, Naka Shigeki 1, Okada Hiroyuki 1 |
|
2 |
The effect of anneal for oxide semiconductor TFTs fabricated with sputtering |
TRADIM 1, NEC LCD Technologies 2, NEC 3@*Nakata Mitsuru 1, Takechi Kazushige 1, Eguchi Toshimasa 1, Yamaguchi Hirotaka 2, Kaneko Setsuo 2,3 |
|
3 |
Characteristics of a-IGZO TFTs having a back-channel-etched structure |
Canon Inc. 1,ERATO-SORST 2,Tokyo Tech 3@*Kaji Nobuyuki 1,Takahashi Kenji 1,Abe Katsumi 1,Hayashi Ryo 1,Kumomi Hideya 1, Nomura Kenji 2,Kamiya Toshio 2,3,Hirano masahiro 2,3,Hosono hideo 2,3 |
|
4 |
In-X-O (X=B,Mg,Al,Si,Ti,Ga,Ge,Mo,Sn) channel TFTs and dependence of their characteristics on element X |
Canon Inc.@*Itagaki Naho 1, Goyal Amita 1, Iwasaki Tatsuya 1, Den Toru 1, Kumomi Hideya 1 |
|
5 |
Reduction of defects and stabilization of a-In-Ga-Zn-O TFTs by post-thermal annealing with wet O2 atmosphere |
ERATO-SORST/JST 1, MSL/Tokyo Tech. 2, FRC/Tokyo Tech 3 @*Kenji Nomura 1, Tosho Kamiya 1,2, Hiromichi Ohta 1, Masahiro Hirano 1,3, Hideo Hosono 1,2,3 |
| £ |
6 |
Low-temperature carrier accumulation of high-density electrons in ionic-liquid gated electric-double-layer transistors on ZnO |
IMR, Tohoku Univ. 1, JST-CREST 2, WPI-AIMR, Tohoku Univ. 3@*Hongtao Yuan 1,2, Hidekazu Shimotani 1,2, Atsushi Tsukazaki 1, Akira Ohtomo 1, Masashi Kawasaki 1,2,3, Yoshihiro Iwasa 1,2
|
|
7 |
Fabrication of a p-n junction diode composed of p-NiO / n-ZnO |
Tokyo Univ. of Science 1, IMRAM Tohoku Univ. 2@*Yoshitsuna Murata 1, Lee Wang 1, Kentarou Fujii 1, Satoru Takahata 1, Hisayuki Nakanishi 1, Mutsumi Sugiyama 1, Shigefusa F Chichibu 2 |
|
8 |
The construction of nano-scale hetero-junction diode structures made of transition metal oxide using Mo lift-off-nanoimprint technique |
ISIR Osaka Univ. 1@Yamanaka Satoru 1, Tanaka Hidekazu 1, Kawai Tomoji 1 |
| 6.4 Novel Materials for Thin Films |
| Sept. 2 9:15`16:30 |
| 2a-Q-@/ II |
|
1 |
Preparation of SrAl2O4 Thin Films on Al under layer |
Niigata Univ. 1@*Koketsu Masakazu 1, Zhang Feng 1, Shimizu Hidehiko 1, Iwano Haruo 1, Kawakami Takahiro 1 |
|
2 |
Optimization of EB-Induced Orientation-Selective-Epitaxial Growth of CeO2(100)/Si(100) |
Iwaki Meisei Univ. 1@*Inoue Tomoyasu 1, Shida Shigenari 1 |
|
3 |
Reaction mechanism of CeO2 thin films in MOCVD@`Influence of water` |
Hosei Univ. 1,Semiconductor Process Laboratory Co.,Ltd. 2@*Ogawa Masatsugu 1,Suda Masakatsu 1,Otsuka Kentaro 1,Izu Takanori 1,Morita Chikayosi 1,Suzuki Setu 2,Yamamoto Yasuhiro 1 |
|
4 |
Influence of Crystallinity on Material Properties of Cu2O Films Prepared by Reactive Magnetron Sputtering |
TOYOTA Central R&D Labs.@*Yoshitaka Nakano, Shu Saeki, Takeshi Morikawa |
|
5 |
Optical Bandgap Modulation of P-Type Cu2ON Films Prepared by Reactive Magnetron Sputtering |
TOYOTA Central R&D Labs.@*Yoshitaka Nakano, Shu Saeki, Takeshi Morikawa |
| |
|
Break 10:30`10:45 |
|
|
6 |
Influence of oxigen supply on SrZrO3 thin films fabricated by liquid delivery MOCVD |
Nara Institute of Science and Technology 1@*Sakairi Hiroyuki 1, Ohkita Syuichi 1, Uchiyama Kiyoshi 1, Shiosaki Tadashi 1 |
|
7 |
Fabrication of oxide thin films for solid oxide fuel cells (SOFC) using MOCVD |
NAIST 1, Sanyo Special Steel 2, Ion Eng. Res. Inst. 3, OSTEC 4@Kiyoshi Uchiyama 1, Hiroyuki Sakairi 1, Hiroshi Ichise 1, Gakuko Lin 1, Tadashi Shiosaki 1, Hiroki Ikeda 2, Masaru Yanagimoto 2, Akira Nakayama 3,4, Yoji Yamada 3 |
|
8 |
Properties of erbium precursors for oxide thin films by MOCVD |
Toshima MFG 1, Kogakuin Univ. 2, NIFS 3, Meisei Univ. 4,@*Tanaka Tsutomu 1, Kawano Takuya 2, Sato Keigo 2, Tasaki Yuzo 1, Hishinuma Yoshimitsu 3, Muroga Takeo 3, Yamazaki Sadao 2, Yoshizawa Shuji 4, |
|
9 |
Zn3N2 thin film growth on sapphire substrate by MOCVD (2) |
Polytechnic Univ.@*Kazuhiko Kakishita, Masaomi Muto, Toshikazu Suda |
|
10 |
Preparation of the Mg-Ni Films by the Ratio of the Thickness of Mg Film and Ni Film |
Niigata Univ 1@*Okada Tomohiro 1, Hirata Makoto1, Shimizu Hidehiko1, Iwano Haruo1, Kawakami Takahiro 1 |
|
11 |
Control of orientation of Pt thin films using the Fe diffusion |
Tokyo Inst. of technology 1, Panasonic Electronic Devices 2@*Matsumoto Tatsuro 1, Tamai Kazuhiro 1, Murashima Yuji 2, Komaki Kazuki 2, Nakagawa Shigeki 1 |
|
12 |
Preparation of the multi-element metal nitride thin film by Y-shape Filtered Arc Deposition System |
Toyohashi Univ. Technol. 1, Onward Ceramic Coating Co., Ltd. 2, Itoh Opt. Indust. Co., Ltd. 3, Kanagawa Indust. Technol. R. C. 4, Hitachi Tool Eng., Ltd. 5@*Mashiki Takayuki 1, Tanoue Hideto 1, Oke Shinichiro 1, Suda Yoshiyuki 1, Takikawa Hirofumi 1, Hasegawa Yushi 2, Taki Makoto 2, Kamiya Masao 1,3, Kumagai Masao 4, Ishikawa Tsuyoshi 5 |
| |
|
Lunch 12:30`13:30 |
|
| 2p-Q-@/ II |
| £ |
1 |
Behavior of Pd discontinuously thin film resistance for hydrogen detection |
JAEA 1@*Zhao Ming 1, Inouye Aichi 1, Yamamoto Shunya 1, Yoshikawa Masahito 1 |
|
2 |
Evaluation of thermal properties of Ti thin film by means of periodic modulated thermoreflectance technique |
Bethel Co. Ltd.@*Genzou MATSUI, Kimihito HATORI, Tetsuya OTSUKI |
|
3 |
Characterization of Switchable Mirror Window with Practical Size |
National Insititute of Advanced Industrial Science and Technology (AIST)@*Yoshimura Kazuki,Bao Shanhu,Tajima Kazuki,Yamada Yasusei,Okada Masahisa |
|
4 |
Electrochromic Response of InN Thin Films with Controlled Nanocolumnar Structures |
Graduate School of Eng., Nagoya Univ. 1, EcoTopia Sci. Inst., Nagoya Univ. 2
@*Hiroyuki Ishikawa 1, Hiroki Takeuchi 1, Yasushi Inoue 2, Osamu Takai 2 |
| £ |
5 |
Optical CO Sensors Based on the Designed Cobalt Oxide Films, Nanowires and Nanoparticles |
AIST 1@Liang Li 1, Takeshi Sasaki 1, Naoto Koshizaki 1 |
|
6 |
Observation of ability of protein adsorption on titania using surface plasmon resonance detection |
Nagaoka Univ. Tech.@*Ii Kiyoto 1, Gawazawa Naoki 1, Konishi Miyuki 1, Nagao Tatsuya 1, Kishimoto Shin-ichi 1, Ohshio Shigeo 1, Akasaka Hiroki 1, Saitoh Hidetoshi 1 |
| |
|
Break 15:00`15:15 |
|
|
7 |
Variation of plasma current for diode electrodes with/without MgO coating |
Nagaoka Univ. Tech. 1@*Takano Akihiro 1, Washio Tukasa 1, Ohshio Shigeo 1, Akasaka Hiroki 1, Saitoh Hidetoshi 1 |
|
8 |
Effect of vacuum annealing on the electrical and optical properties of ZnO-SnO2 thin films (II) |
Tech. Research Inst. of Osaka Pref. 1@*Satoh Kazuo 1, Kakehi Yoshiharu 1, Murakami Shuichi 1, Okamoto Akio 1, Moriwaki Kousuke 1 |
|
9 |
The Electric Conduction of a WO3 Film Injected with Oxygen Deficiencies |
NHK Sci. & Tech. Res. Labs. 1,Tokai Univ. 2@*Sato Ryuji 1,Sugiyama Masaaki 2,Kawamura Norikazu 1,Kunugi Yoshihito 2 |
|
10 |
Loss Properties of Thin Anodized Capacitors Made of Hf-doped Nb Alloy Films |
Kitami Inst. Tech. 1, Kyusyu Inst. Tech. 2@*Shibata Tomoharu 1, Hidefumi Kimizaki 1, Sasaki Katsutaka 1, Yamane Misao 1, Abe Yoshio 1, Shinkai Satoko 2 |
|
11 |
Evaluation of electric property of AlSiO/AlO/SiC |
Osaka Univ. 1@*Komatsu Naoyoshi 1, Kimura Chiharu 1, Aoki Hidemitsu 1, Sugino Takashi 1 |
| 6.4 Novel Materials for Thin Films |
| Sept. 3 9:30`17:15 |
| 3a-Q-@/ II |
|
1 |
Coating of the surface inside pores with silane-coupling agent |
Keio Univ. 1@*Koike Jun 1, Shihratori Seimei 1 |
|
2 |
Hard Composite Coatings by Aerosol Deposition |
Sumitomo Electric Industries, LTD.@Koike Sachiko 1, Setoyama Makoto 1, Toda Naohiro 1 |
|
3 |
Preparation of transparent electrically conductive film based on tin phosphate glass |
Chubu Univ. 1@*Kawachi Yuya 1,Tahashi Masahiro 1,Goto Hideo 1,Ido Toshiyuki 1 |
|
4 |
Analyses of H2O in Sol-Gel Derived HfO2 Film on Si(100) Snrface by Temperature Programmed Desorption |
College of Engineering, Nihon Univ.1@Nemoto Daiki 1,Shimizu Hirofumi 1,Ikeda Masanori 1,Nishide Toshikazu 1 |
|
5 |
Direct patterning of oxide films by a surface discharge technique |
Shizuoka Univ. 1@Masahiro Shikatani 1, Yosuke Sonohara 1, Yoshihiro Shibayama 1, *Masayuki Okuya 1 |
|
6 |
Effects of Ion-Plating Method in Fluoride Thin Films |
ShinMaywa Industries,Ltd. R&D Center 1,Grad. School of Advanced Sciences of Matter, Hiroshima Univ. 2 @Takanobu Hori 1,2,Takeshi Koyama 1,Hiroshi Kajiyama 2 |
| |
|
Break 11:00`11:15 |
|
|
7 |
Thin film formation by Ga evaporation in plasma of N2 gas or mixture of N2 and O2 gases |
Ishinomaki Senshu Univ.1@*Shinji Nakagomi 1, Shinichi Abe 1, Takuya Akeishi 1, Kenji Wakabayashi 1, Shingo Saito 1, Yoshihiro Kokubun 1 |
|
8 |
Adhesion fracture observation of the vacuum evaporated Au/Sb film |
Kanto Gakuin Univ.@*Hosaka Tetsuya1 |
|
9 |
Deposition of TiN films by plused laser ablation |
AIST-NeRI 1, AIST-NRI 2, AIST-NRI 3, JST-CREST 4@*Hiroshi Sato 1,4, Ai Kitoh 1,4, Akihito Sawa 1,4, Isao H. Inoue 1,4, Hiroshi Akoh 1,4 Hiroyuki Akinaga 2,3,4 |
|
10 |
Fabrication of TiO2 micro-nano hierarchical structures with hexagonal ordered arrangement |
AIST 1@Yue Li 1, Takeshi Sasaki 1, Yoshiki Shimizu 1, Naoto Koshizaki 1 |
| £ |
11 |
Growth of (ultra) thin La1.2Sr1.8Mn1.7Ru0.3O7 Ruddlesden-Popper films on SrTiO3 substrate |
Tokyo Univ. ISSP 1@*Matvejeff Mikko 1, Lippmaa Mikk 1 |
| |
|
Lunch 12:30`13:30 |
|
| 3p-Q-@/ II |
|
1 |
Development of Vacuum Deposition Technique of Ionic Liquids(I) |
Tokyo Institute of Technology 1, Tokyo Univ. 2,3, NIMS 4@*S. Maruyama 1, M. Katayama 2, H. Koinuma 3,4, Y. Matsumoto 1
|
|
2 |
Development of Vacuum Deposition Technique of Ionic Liquids (II)
|
Tokyo Institute of Technology 1, Tokyo Univ. 2, NIMS 3
@*S. Maruyama 1, K.Itaka 2, H. Koinuma 3,4, Y. Matsumoto 1 |
| ’ |
3 |
Clear Transparency All-Solid-State Switchable Mirror Glass Based on Mg-Ti Thin Film |
AIST@*Kazuki Tajima 1, Yasusei Yamada 1, Shanhu Bao 1, Masahisa Okada 1, Kazuki Yoshimura 1 |
|
4 |
Hydrogenation and dehydrogenation process of Pd thin films measured in real time using spectroscopic ellipsometry |
AIST@*Yamada Yasusei 1,Tajima Kazuki 1,Bao Shanhu 1,Okada Masahisa 1,Yoshimura Kazuki 1 |
| ’ |
5 |
Growth of metal whiskers by glancing angle deposition on high temperature substrate (HT-GLAD) |
Kyoto Univ. 1@*Hamachi Kenji 1, Suzuki Motofumi 1, Kinoshita Sadamu 1, Nakajima Kaoru 1, Kimura Kenji 1 |
| ’ |
6 |
Oxidation resistance of TixAlySizN or TixSiyN super hard films deposited by reactive sputtering . |
Aoyama Gakuin Univ. 1,AIST 2 @*Kousuke Takahashi 1,Kouitirou Hattori 2,Yutaka Seino 2,Yasushi Sato 1,Yuzo Shigesato 1 |
| ’ |
7 |
REACTIVE SPUTTER DEPOSITION OF AlN FILMS WITH HIGH THERMAL CONDUCTIVITY |
Aoyama Gakuin Univ. 1, AIST 2@*Okabe Takashi 1, Yagi Takashi 2, Taketoshi Naoyuki 2, Baba Tetsuya 2, Oka Nobuto 1, Sato Yasushi 1, Shigesato Yuzo 1 |
| |
|
Break 15:15`15:30 |
|
| ’ |
8 |
Growth and evaluation of Ce3+ doped Lithium Calcium Aluminum fluoride thin films by pulsed laser deposition |
Nagoya Inst. of Tech. 1,Osaka Univ. 2,Tokuyama Corporation 3,
Tohoku Univ 4@*Kuwana Yuki 1,Ichikawa Yo 1,Ono Shingo 1,Sarukura Nobuhiko 2,
Fukuda Kentaro 3,Ishizu Sumito 3,Suyama Toshihisa 3,
Yanagida Takayuki 4,Yoshikawa Akira 4,Saito Fumio 4
|
| ’ |
9 |
Fabrication and characterization of electrically functional lanthanum boride thin films on ultra-smooth sapphire substrate |
Dept. of Innov. Eng. Mater., Tokyo Inst. of Tech. 1, TOSHIMA Manufacturing Co., Ltd 2@*Kato Yushi 1, Akita Yasuyuki 1, Ono Yusaburou 1, Shiraishi Naoki 1, Tsuchimine Nobuo 2, Yoshimoto Mamoru 1 |
| ’ |
10 |
Etching analysis of alumina film using surface plasmon resonance |
Nagaoka Univ. of tech. 1@*Miyuki Konishi 1,Shin-ichi Kishimoto 1,Shigeo Ohshio 1,Hiroki Akasaka 1,Hidetoshi Saitoh 1 |
| ’ |
11 |
Time dependence of internal stress and molecule structure with long-term in SiO2 optical thin film |
Tokai Univ. 1,SHINCRON CO.,LTD. 2@*Ono Hiroi 1,Sugiyama Hikaru 1,Nishikawa Toshiyuki 1,Murotani Hiroshi 1,Wakaki Moriaki 1,Iida Yoshitaka 2,Okada Katsuhisa 2 |
| ’ |
12 |
Characterization of Zirconia thin film prepared by low-temperature synthesizing to plastic substrate. |
Graduate School of Engineering Tokai Univ.@*Hokuto Ina, Hiroi Ono, Satoshi Yoshino, Hiroshi Murotani, Moriaki Wakaki |
| ’ |
13 |
Characterization of MoOx films deposited by reactive sputtering |
Aoyama Gakuin Univ. 1@*Watanabe Hiroki 1, Oka nobuto 1, Sato Yasushi 1, Shigesato Yuzo 1 |
|
14 |
Evaluation of Ru complex (Ru-HDAC) as CVD precursor under H2 |
Ube Industries, Ltd.,@*Kadota Takumi 1, Hasegawa Chihiro 2, Nihei Hiroshi 3 |
| 6.5 Surface Physics and Vacuum |
| Sept. 2 10:00`18:00 |
| 2a-R-@/ II |
| ’ |
1 |
Surface Properties of Sc-O/W(100) System at High Temperature -Change in Work Function during Phase Transition- |
Osaka Univ. 1@Nakanishi Yousuke 1, Nagatomi Takaharu 1, Takai Yoshizo 1 |
|
2 |
Direct observation of field ionization event on W(110) surface using a pulse counting method |
Osaka City Univ. 1@Naoki Takahashi 1,Yoshinori Nakamura 1,Yuki Kamon 1,Hiroshi Kumagai 1,*Ataru Kobayashi 1 |
|
3 |
Development of photon-stimulated desorption spectrometer produced by application of VUV-UV |
ESCO Co., Ltd 1,NTP Co., Ltd 2,Graduate school of Engi. Miyazaki Univ. 3@Miyabayashi Nobuyoshi 1, Sasaki Wataru 2, Wasamoto Makoto 3, Yokotani Atushi 3 |
|
4 |
2-D imaging of H and O on p-n junction of Si surface using scanning ESD ion microscope |
Toyota Technological Institute@Kazuyuki Ueda and Yoshiko Yoshikawa |
|
5 |
Dielectric properties of the ultra-thin La2O3 (0001) film |
Univ. of Electro-Communications 1, Univ. of Tokyo 2@*Yanai Ryosuke 1, Nakamura Jun 1,2 Natori Akiko 1 |
|
6 |
Investigation of chemical reaction at gburiedh interface of memory device by hard X-ray photoelectron spectroscopy at SPring-8 |
RIKEN 1,NIMS 2,JASRI 3@Aiko Nakao 1,Masashi Ishi 2,Son Jin-young 3,Masatake Machida 3,Yoshio Watanabe 3 |
|
7 |
Control of metal – insulator energy band offset by interface terminations |
National Inst. for Mater. Sci. 1, Ningbo Inst. Mater. Tech. Engineering 2@Yoshitake Michiko 1, Song Weijie 1,2 |
| |
|
Lunch 11:45`13:00 |
|
| 2p-R-@/ II |
|
1 |
Relaxation of Voids in Si Substrates by High Temperature Hydrogen Annealing |
ISIR, Osaka Univ. 1,Fuji Electric Device Technology 2,Fuji Electric Advanced Technology 3@*Sudoh Koichi 1,Iwasaki Hiroshi 1,Hiruta Reiko 2,Kuribayashi Hitoshi 2,Shimizu Ryosuke 3 |
| £ |
2 |
Growth Instabilities of Silicon Homoepitaxy on Si(110) Surfaces |
Tohoku Univ. RIEC 1@Arnold Alguno 1, Sergey Filimonov 1, Maki Suemitsu 1 |
|
3 |
Observation of O2 adsorption on Si(111)-7~7 via trapping-mediated mechanism by real-time synchrotron radiation photoelectron spectroscopy |
Japan Atomic Energy Agency 1,@*Akitaka Yoshigoe 1, Yuden Teraoka 1 |
|
4 |
Enhancement of O2 adsorption on Si(111)-7~7 in direct adsorption mechanism |
Japan Atomic Energy Agency 1,@*Akitaka Yoshigoe 1, Yuden Teraoka 1 |
| ’ |
5 |
Bonding structures of 1 mono-layer oxide on Si(110) evaluated by SR-PES |
Tohoku Univ. 1, JST-CREST 2,JAEA 3@*Yamamoto Yoshihisa 1,Hideaki Togashi 1,Konno Atsushi 1,Matsumoto Mitsutaka1, Saito Eiji 1,Suemitsu Maki 2 3,Teraoka Yuden 3,Yoshigoe Akitaka 3 |
|
6 |
Temperature dependence of optical reflectance spectra in initial oxidation processes on Si(001) |
Yokohama Nat'l Univ. 1, Nat'l Defense Academy 2@*Shin-ya Ohno 1, Fumitake Mitobe 1, Junya Koizumi 1, Ken-ichi Shudo 1, Takanori Suzuki 2, Masatoshi Tanaka 1 |
|
7 |
Study of oxidation effects to Ti-silicide formation on Si(001) surface |
Yokohama Nat'l Univ. 1, ISSP Univ. of Tokyo 2@*Fumito Nakayama 1, Kazuaki Yamazaki 1, Shinya Ohno 1, Masamitsu Toramaru 1, Yuichi Ichikawa 1, Takahiko Yamazaki 1, Kenichi Shudo 1, Masatoshi Tanaka 1, Taichi Okuda 2, Ayumi harasawa 2, Iwao Matsuda 2, Akihito Kakizaki 2 |
|
8 |
Mass spectrometric Study of photo dissociation of organic molecules by vacuum-ultraviolet irradiation |
Graduate school of Engi, Miyazaki Univ. 1, Cooperative Research Center, Miyazaki Univ. 2@Wasamoto Makoto 1, Katto Masahito 2, Yokotani Atushi 1 |
|
9 |
Real-Time XPS Observation of Carbonization Reactions on Si(001) Surface with Ethylene |
Tohoku Univ. 1, JAEA 2, Akita Nat. Col. Tech. 3@Takakuwa Yuji 1, Ogawa Shuichi 1, Hozumi Hideaki 1, Kawamura Tomofumi 1, Yoshigoe Akitaka 2, Ishidzuka Shinji 3, Teraoka Yuden 2 |
|
10 |
Raman characterizations of epitaxial graphene near surface defects areas on vicinal 6H-SiC |
Fukui Univ. 1,Kyusyu Univ.2@*Terasaki Hiromitsu 1, Hashimoto Akihiro 1, Tanaka Satoru 2 |
|
11 |
Local work function measurements of epitaxial graphene using thermionic electron emission microscopy |
NTT Basic Research Labs. 1, JASRI 2@*Hibino Hiroki 1, Kageshima Hiroyuki 1, Kotsugi Masato 2, Watanabe Yoshio 2 |
| ’ |
12 |
Novel fabrication of self-supporting graphene sheet |
Waseda Univ. 1,National Inst for Research in Inorganic Materials. 2@*Odahara Genki 1,Oshima Chuhei 1,Otani Shigeki 2 |
| |
|
Break 16:00`16:15 |
|
|
13 |
Selective Growth of Phosphate Crystals on Hydrophobic/hydrophilic Patterned Surface |
Shinshu Univ. 1@*Shoko Mori 1,SunHyung Lee 1,Katsuya Teshima 1,Takaomi Suzuki 1,Shuji Oishi 1 |
|
14 |
Quantum dynamics of O2 on cathode catalysts of PEFC |
Department of Applied Physics,Osaka University 1,Department of Physics,Osaka University 2
@*Fujio Kourou 1,Roman Tanglaw 1,Escaño Clare 1,Diño Wilson 2,Hiroshi Nakanishi 1,Hideaki Kasai 1 |
|
15 |
Theoretical study of the dynamical behavior of adsorbed ions on solid-liquid interface |
Info. Tech. Center Univ. of Toyama 1, Graduate School of S.E.R. Univ. of Toyama 2@*Nunomura Norio 1, Sunada Satoshi 2 |
|
16 |
Anodization processes of Al microwires for a room-temperature operating single electron devices |
Laboratory for Nanoelectronics and Spintronics,RIEC,Tohoku Univ., 1@*Muto Takami 1,Shimakura Naoko 1,Kimura Yasuo 1,Niwano Michio 1 |
|
17 |
The analysis of the recursive functions of LaFePdO3 perovskite automotive catalyst |
Osaka University 1, Daihatsu Motor 2, Japan Atomic Energy Agency3@*Hirofumi Kishi1, Hiroshi Nakanishi1, Hideaki Kasai1, Masashi Taniguchi2, Mari Uenishi2, Hirohisa Tanaka2, Yasuo Nishihata3, Junfichiro Mizuki3 |
|
18 |
Fabrication and evaluation of of higholeophobic surface by particle thin film. |
Grad. Sch. Sci. Tech., Keio Univ@yohei masuda 1,seimei siratori 1 |
|
19 |
Characterization of the composition of SiNx-related gas barrier films formed by Cat-CVD using HMDS. |
Jpn.Adv.Inst.Sci.&Tech(JAIST)@*Sasaki Daizyu 1, Oodaira Keisuke 1 Matumura Hideki 1 |
| 6.5 Surface Physics and Vacuum |
| Sept. 3 9:00`16:30 |
| 3a-R-@/ II |
|
1 |
Growth and Structure of N2 Films Physisorbed on Ag(111) |
Department of Physics, Gakushuin Univ. 1@*Shuichi Moto 1, Takashi Miura 1, Ichiro Arakawa 1 |
|
2 |
Photon-Stimulated Desorption of Water-Methane Complex Clusters on the Rare Gas Solid Surface |
Gakushuin Univ. 1@*Ide Takahisa 1,Shimizu Toshiki 1,Miura Takashi 1,Arakawa Ichiro 1 |
|
3 |
Formation and desorption of hydrogen molecules on very cold D2O ice surface |
Kyushu Inst. Tech.@*Yamauchi Takashi 1,Mine Kazuyuki 1,Nakashima Yasunari 1,Namiki Akira 1 |
|
4 |
Incident energy dependence in surface atom abstraction from Cu(111) and CuO(100) |
Osaka Univ.@*Tanglaw Roman1, Tomoko Ohya1, Hirofumi Kishi1, Hiroshi Nakanishi1, Hideaki Kasai1 |
|
5 |
Desorption of atomic hydrogen absorbed on Ag/Si(111) 7~7 |
Tokyo Tech@1@*Tadashi Sugimoto 1, Yuki Aoki 1, Hiroyuki Hirayama 1 |
| |
|
Break 10:15`10:30 |
|
| ’ |
6 |
Si growth process on the Si(111)\sqrt{3}\times\sqrt{3}-Ag surface |
Japan Women's Univ. 1@*Minami Tomoko 1, Ichimiya Ayahiko 1 |
|
7 |
Silver growth on the Si(111)\sqrt{3}\times\sqrt{3}-Ag surface and the annealing effect |
Japan Women's Univ. 1@Sakamoto Kazuki 1, Sumiya Ami 1, *Ichimiya Ayahiko 1 |
|
8 |
Measurement environment dependence of surface electric conductivity due to surface reconstruction |
Nagoya Univ. 1@Moriwaki Yasuhiro 1,Nakahara Hitoshi 1,Saito Yahachi 1 |
|
9 |
A Structure analysis of Ni2P(0001)-(1x1) surface by means of LEED I-V curve |
Graduate School of Engineering, Hokkaido Univ. 1, Catalysis Research Center, Hokkaido Univ. 2 @*Kinoshita Kumiko 1,2, Miyamoto Takeshi 1,2, Nakagawa Yuta 1,2, Suzuki ShuShi 1,2, Takakusagi Satoru 1,2, Asakura Kiyotaka 1,2 |
|
10 |
Structure of the Si(553)-Au surface at room temperature and low temperature |
Tokyo Univ. ISSP 1, Nagoya Univ. 2, KEK PF 3@* Voegeli Wolfgang 1, Takayama Toru 1, Kubo Kimitaka 1, Abe Makoto 1, Iwasawa Yusaku 1, Shirasawa Tetsuroh 1, Takahashi Toshio 1, Akimoto Koichi 2, Sugiyama Hiroshi 3 |
|
11 |
Auger Intensities from Si(001)2x2-Al Surface by MEED Wave-Field Excitation II |
Daido Inst. of Tech. 1@*Horio Yoshimi 1,Sakai Daisuke 1 |
| |
|
Lunch 12:00`13:30 |
|
| 3p-R-@/ II |
|
1 |
Electronic structure of Fe/Si interface by the change of Si thickness in Fe/Si magnetic multilayer |
IMRAM, Tohoku Univ. 1@*Goto Tomohiro 1,Jinno Takayoshi 1,Ejima Takeo 1 |
|
2 |
Spin polarization of C60 thin films grown on Fe(110) |
NIMS 1, UTSC 2@Shiro Entani 1, Xia Sun 2, Mitsunori Kurahashi 1, Yasushi Yamauchi 1 |
|
3 |
Adsorption structure of phenylphosphonic acid on alumina and Au surface |
NIMS 1,Charles Univ. 2@*Yagyu Shinjiro 1, Yoshitake Michiko 1, Tsud Nataliya 2, Chikyow Toyohiro 1 |
|
4 |
STM observation of sulfur adsorbates on Au(111) at 77K |
Kyoto Univ@Kurokawa shu, Miyawaki yuu, Sakai Akira |
|
5 |
Coadsorption of Ni and Sn on Si(111) surface |
Toyota Tech. Inst. 1@*Sakimoto Mitsuru 1, Masamichi Yoshimura 1, Kazuyuki Ueda 1 |
| |
|
Break 14:45`15:00 |
|
|
6 |
Real-Space observation of electronic and magnetic structure in Co-nanodots on Au(111) by Scanning Tunneling Microscope using antiferromagnetic tip |
The University of Tokyo 1,RIKEN 2@Hirotaka Inoue 1,Susumu Shiraki 1,Noriaki Takagi 1,Maki Kawai 1,2 |
|
7 |
Formation of iron dots on gallium nitride and I-V characteristic |
Osaka Univ.ISIR 1@Honda Yuya 1, Sotani Motoki 1, *Hasegawa Shigehiko 1, Asahi Hajime 1 |
| ’ |
8 |
Atomic Arrangements and Magnetic Properties of Ga-substituted Mn-Atomic Wires on GaAs(110) |
Univ. of Electro-Communications 1, Univ. of Tokyo 2@*Motoi Hirayama 1, Jun Nakamura 1,2, Natori Akiko 1 |
|
9 |
How to grow Ag nanowires on self-assembled Bi nanolines: A first-principles study |
RCIQE Hokkaido Univ. 1, NIMS 2@Koga Hiroaki 1, Ohno Takahisa 2 |
|
10 |
Photoluminescence study of GaSb quantum dots epitaxially grown on Si substrates covered with ultrathin SiO2 films |
The University of Tokyo 1@*Yoshiaki Nakamura 1, Tomohiro Sugimoto 1, and Masakazu Ichikawa 1 |
|
11 |
Formation of Si/Ge1-xSnx dots/Si structures with high light emitting efficiency in the 1.5Κm range |
Univ.of Tokyo 1@*Fujinoki Norihito 1, Nakamura Yoshiaki 1, Ichikawa Masakazu 1 |
| 6.6 Probe Microscopy |
| Sept. 3 9:00`12:00 |
| 3a-L-@/ II |
| £ |
1 |
Development and evaluation of electric force microscopy EFM(DC) & EFM(AC) |
SII NanoTechnology Inc. 1, Epolead Service, Inc. 2@Takehiro Yamaoka 1, Hana Tujikawa 1, Kazutoshi Watanabe 1, Toshiya Nishimura 2 |
|
2 |
Influence of feedback control error on dynamic mode/ phase imaging and effect of SIS mode |
SII NanoTechnology@*Masayuki Iwasa 1, Takehiro Yamaoka 1, Yoshiteru Shikakura 1, Masatoshi Yasutake 1, Kazutoshi Watanabe 1 |
|
3 |
Measurement of topography and multifunction by SIS mode |
SII Nanotechnology Inc.@1@M Shigeno, M.I.iwasa,@K.Watanabe |
| ’ |
4 |
Prototype of Atomic Force Microscope by Pico Newton Force Control |
Gunma University@*Katsuyuki Takizawa 1, Hayato Sone 1, Sumio Hosaka 1 |
| ’ |
5 |
High-speed Surface Topography Estimation using Multirate Observer for AFM |
Yokohama National Univ. 1@*Shiraishi Takayuki 1, Fujimoto Hiroshi 1 |
| ’ |
6 |
Development of Wideband Digital Frequency Detector for High-Speed Frequency Modulation Atomic Force Microscope |
Kanazawa Univ. 1, FSO. Kanazawa Univ. 2, PRESTO/JST 3@*Mitani Yuji 1, Muramoto Kenichiro 1, Fukuma Takeshi 2,3 |
| |
|
Break 10:30`10:45 |
|
| ’ |
7 |
The Measurement Technique of Molecular Potential and Dipole Moment on an Insulating Substrate using FM-AFM |
Osaka Univ. 1, RIKEN 2, Hyogo Univ. of Health Sci. 3@Fumihiko Yamada 1, Kazuki Okamoto 1, Akihiko Takagi 1,2, Eriko Mikamo-Satoh 3, Takuya Matsumoto 1, Tomoji Kawai 1 |
| ’ |
8 |
Spin-polarized tunneling between optically pumped GaAs(110) surface and spin-polarized tip |
Hokkaido Univ.@*Nobuyuki Ishida, Kazuhisa Sueoka |
| ’ |
9 |
Ultra-high-density data storage into C60 thin film using an STM probe |
NIMS 1, Osaka Univ. 2, Univ. of Tsukuba 3@*Nakaya Masato 1, Kuwahara Yuji 2, Aono Masakazu 1, Nakayama Tomonobu 1,3 |
| ’ |
10 |
SPM Observation of Pt Nanoparticles Photodeposited on TiO2 (110) |
Graduate School of Science, Kobe Univ. 1@*Suzumi Kataoka 1,Kenjiro Kimura 1,Hiroshi Onishi 1 |
|
11 |
Surface potential imaging on the surface of Pt/C heterogeneous catalysts |
Matsushita Elec. Ind. 1@Daisuke Ino 1, Yuka Yamada 1 |
| 6.6 Probe Microscopy |
| Sept. 4 9:30`17:15 |
| 4a-L-@/ II |
|
1 |
Rheology of Many Cells Measured by Atomic Force Microscopy : Statistical Analysis of Complex Shear Modulus of Living Cells |
Graduate School of Information Science and Technology, Hokkaido Univ 1, RIES, Hokkaido Univ 2@*Hiratsuka Shinichiro 1, Mizutani Yusuke 1, Tsuchiya Masahiro 1, Kawahara Koichi 1,
Tokumoto Hirosi 2, Okajima Takaharu 1 |
|
2 |
Mechanics of beating Cardiomyocytes investigated by AFM |
Graduate School of info. Sci. & Tech., Hokkaido Univ. 1, RIES, Hokkaido Univ. 2@*Mizutani Yusuke 1, Hiratsuka Shinichiro 1, Tsuchiya Masahiro 1, Kawahara Koichi 1, Tokumoto Hiroshi 2, Okajima Takaharu 1 |
|
3 |
High-Resolution Imaging of Biomolecules in Liquid by Frequency-Modulation Atomic Force Microscopy |
Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, JST/Adv. Meas. & Analysis 2, Innovative Collaboration Center, Kyoto Univ. 3, AIST 4, Inst. of Med. & Dentistry, Niigata Univ. 5@*Shinichiro Ido 1, Takashi Horiuchi 1, Noriaki Oyabu 1,2, Kenjiro Kimura 1,2, Kei Kobayashi 1,3, Kazumi Matsushige 1, Hirofumi Yamada 1,2, Yoshiki Hirata 4, Osamu Hoshi 5, Tatsuo Ushiki 5 |
|
4 |
Local Solvation Structures Investigated by Dynamic Force Microscopy |
JST/Adv.Meas.&Analysis 1, Dept.of Electronic Sci.& Eng.,Kyoto
Univ. 2, Innovative Collaboration Center, Kyoto Univ. 3,RIKEN 4, Graduate School of Sci. Kobe Univ. 5@*Kimura Kenjiro 1,5, Ido Shinichiro 2, Oyabu Noriaki 1,2, Kobayashi Kei 1,3, Imai Takashi 4, Onishi Hiroshi 1,5, Yamada Hirofumi 1,2 |
| |
|
Break 10:30`10:45 |
|
|
5 |
Investigation of the topography of FM-AFM by dynamic force mapping |
Osaka Univ. 1, JST-PRESTO 2@*Sugimoto Yoshiaki 1, Namikawa Takashi 1, Miki Koutaro 1, Abe Masayuki 1,2, Morita Seizo 1 |
|
6 |
Analysis of lateral force acting on the probing tip using force mapping on Si(111)-(7x7) |
Osaka Univ. 1, PRESTO-JST 2@Yoshiaki Sugimoto 1, Takashi Namikawa 1, Koutaro Miki 1, Masayuki Abe 1,2, Seizo Morita 1 |
|
7 |
Clarification of the manipulation mechanism using Force Spectroscopy Measurement |
Osaka Univ.1@*Sato Takuhei 1, Lee Seunghwan,Naitoh Yoshitaka 1, Li YanJun 1, Kageshima Masami 1,Sugawara Yasuhiro 1 |
|
8 |
Nano-scale lithography with frequency-modulation AFM |
ISSP, the Univ. of Tokyo 1, Graduate School of Engineering, Tohoku Univ. 2@*Masayuki Hamada 1, Toyoaki Eguchi 1, Kotone Akiyama 2, Yukio Hasegawa 1
|
|
9 |
Nanodispensing of liquid droplets out of the ultrasmall aperture of an AFM tip (4) |
Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, Innovative Collaboration Center, Kyoto Univ. 2@*Kaisei Kiyohiro 1, Kobayashi Kei 2, Yamada Hirofumi 1, Matsushige Kazumi 1 |
| |
|
Lunch 12:00`13:00 |
|
| 4p-L-@/ II |
|
1 |
AFM Image Reconstruction using Apparent Probe Shape |
AIST@*Chiu Te-Wei, Itoh Hiroshi |
|
2 |
Restoration of AFM Topography Image Containing Tip-induced Distortions by using Right Rectangular Prism Nano-structure |
NIMS 1@*Onishi Keiko 1, Fujita Daisuke 1 |
|
3 |
Fabrication of carbon nanofiber probes for biomolecular imaging |
Nagoya Inst. Technol 1, Olympus Co. Ltd.@2@ *Sugita Yoshitaka 1, Kitazawa Masashi 1,2, Tanemura Masaki 1, Hayashi Yasuhiko 1, Ota Ryou 2 |
|
4 |
Analysis of the Number of Functional Groups of Multiwalled Carbon Nanotube Probe Participating in Hydrogen Bonding |
Hokkaido Univ. 1@*Azehara Hiroaki 1, Tokumoto Hiroshi 1 |
|
5 |
Development of MFM probe with Carbon Nanotube probe III |
Daiken Chemical 1,Osaka Pref. Univ. 2,Osaka Univ. 3@*Yamanaka Shigenobu 1,Okawa Takashi 1,Akita Seiji 2,Nakayama Yoshikazu 3 |
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6 |
Optimization of MFM probe for detecting current-induced magnetic field |
Osaka Univ. 1,@*Kajiwara Masahiro 1,Tanaka Yuji 1,Murakami Katsuhisa 1,Abo Satoshi 1,Wakaya Fujio 1,Takai Mikio 1 |
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7 |
Torsion enhanced Cantilever Processed by FIB |
IIS, Univ. of Tokyo 1, INQIE, Univ. of Tokyo 2@*Ato Masayuki 1, Takahashi Takuji 1,2 |
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8 |
Stabilization of cantilever oscillation in tapping-mode AFM using time-delayed feedback control |
VBL, Kyoto Univ. 1,ICC, Kyoto Univ. 2,Grad. School of Eng. Kyoto Univ. 3@Yamasue Kohei 1,Kobayashi Kei 2,Yamada Hirofumi 3, Matsushige Kazumi 3,Hikihara Takashi 3 |
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Break 15:00`15:15 |
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9 |
Vibration Characterization of Silicon Cantilever Caused by Static-Deflection Release |
NTT Basic Research Labs. 1, The Univ. of Tokyo 2@*Keiichiro Nonaka 1,2, Kojiro Tamaru 1,2, Masao Nagase 1, Hiroshi Yamaguchi 1, Shin'ichi Warisawa 2, Sunao Ishihara 2 |
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10 |
Time-resolved electrostatic force detection by frequency-shift mode |
ISIR, Osaka Univ. 1@*Matsumoto Takuya 1, Kawai Tomoji 1 |
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11 |
Oscillation and Amplitude Detection of GaAs membrane using Microprobe |
NTT Basic Research Labs. 1, Univ. of Tokyo 2@*Tamaru Kojiro 1,2, Nonaka Keiichiro 1,2, Nagase Masao 1, Yamaguchi Hiroshi 1, Warisawa Shin'ichi 2, Ishihara Sunao 2 |
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12 |
Simulation of amplitude dependence of lateral-mode dynamic-AFM map of Si(111)7~7 surface |
Seikei Univ. 1, IIS, Univ. of Tokyo 2, Univ. of Basel 3@*Sasaki Naruo 1, Kawai Shigeki 2,3, Kawakatsu Hideki 2
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13 |
Development of High Resonance Frequency Scanner for High-Speed Scanning Probe Microscopy |
Kanazawa Univ. FSO 1, PRESTO/JST 2@Takeshi Fukuma 1,2 |
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14 |
Ultrasonic scanning tunneling microscope |
Kansai Univ.@Takata Keiji, Moriwaki takeshi, Nishida shinichi |
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15 |
Observation of deep holes by an ultrasonic scanning microscope |
Kansai Univ. 1@*Moriwaki Takeshi 1,Nishida Shinichi 1,Shingubara Shoso 1,Takata Keiji 1 |
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16 |
Strain imaging of PZT films using an ultrasonic scanning tunneling microscope |
Kansai Univ. 1@*Nishida Shinichi 1,Moriwaki Takeshi 1,Yamano Akihiro 1,Kozuka Hiromitsu 1,Takata Keiji 1 |
| 6.6 Probe Microscopy |
| Sept. 5 9:00`12:00 |
| 5a-L-@/ II |
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1 |
Thermal annealing effects on 4,4"-diamino-p-terphenyl deposited on Si(111)7x7 |
Japan Advanced Inst Science and Technology 1, Kanazawa Univ 2, SORST JST 3@*Takashi Nishimura 1, Atushi Itabashi 1, Akira Sasahara 1, Hideyuki Murata 1, Toyoko Arai 23, Masahiko Tomitori 1 |
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2 |
Electrical properties of organic semiconductor thin films studied by two-probe AFM/KFM |
Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, Innovative Collaboration Center, Kyoto Univ. 2
@*Eika Tsunemi 1, Nobuo Satoh 1, Kei Kobayashi 2, Kazumi Matsushige 1, Hirofumi Yamada 1 |
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3 |
Characterization of point defects near the (111)A-oriented surface of MBE-grown InAs thin film using low-temperature STM |
NTT-BRL 1@*Kanisawa kiyoshi 1, Fujisawa Toshimasa 1 |
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4 |
Observation of Photo-induced Current Signal on InAs Wires by STM under Dual Light Illumination |
IIS 1, INQIE 2, Univ. of Tokyo@Katsui Shuichi 1, Takahashi Takuji 1,2 |
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5 |
Photothermal Spectroscopic Measurements by AFM with Piezoresistive Cantilever |
IIS 1 & INQIE 2, Univ. of Tokyo@*Hara Kenji 1, Takahashi Takuji 1,2 |
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Break 10:15`10:30 |
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6 |
STM Study of Hydrogenated Si(110) Surface |
Nano High-Tech. Res. Center, Toyota Tech. Inst. 1@*Visikovskiy Anton 1, Yoshimura Masamichi 1, Ueda Kazuyuki 1 |
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7 |
Nano-scale Elemental Analysis of Metal Monolayer on Semiconductor Surface using SR-STM System |
Osaka Univ. 1,RIKEN/SPring-8 2,PRESTO(JST) 3,Inst.for Molecular Science 4,NIMS 5@Hosokawa Hiromasa 1 2,Saito Akira 1,2,3,Takagi Yasumasa 4,Tanaka Takehiro1.2, Takahashi Koji 1,Tanaka Yoshihito 2,Akai-Kasaya Megumi 1,3,Ishikawa Tetuya 2,Shin
Shigi 2,Kuwahara Yuji 1,2,Aono Masakazu 5
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8 |
Optical Control of Metal – Insulator Phase Transition of Indium Nanowires on Si(111) |
Univ. of Tsukuba, CREST-JST @Okubo Atsushi ,Terada Yasuhiko, Yoshida Shouji, Takeuchi Osamu, Shigekawa Hidemi |
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9 |
Observation of Electron Standing Waves on the Si(111)7x7– Ultra thin Ag Film Surfaces |
Tokyo Tech@*Sawa Keiichi 1, Aoki Yuki 1, Hirayama Hiroyuki 1 |
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10 |
Scattering Potential Evaluation of a Vacancy Complex on a Si(111)γ3xγ3-Ag surface at Room Temperature |
Tokyo Tech 1, ITOCHU Techno 2@Satoshi Minamoto 1,2, Hiroyuki Hirayama 1 |
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11 |
Simulation of clustering processes of Ag atoms on the Si(111)-(7~7) surface |
The Univ. of Electro-Communications 1, Tohoku Univ. 2, The Univ. of Tokyo 3@*Chiba Tomo 1, Hiyashimizu Yu-ko 2, Sensui Kazuhiro 2, Suto Syo-zo 2, Nakamura Jun 1 3, Natori Akiko 1 |