| 16 Amorphous and Microcrystalline Materials |
| 16.1 Fundamental Properties and Evaluations |
| Sept. 4 10:00`17:45 |
| 4a-ZD-@/ II |
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1 |
Does the charged defect exist? |
Hokkaido Univ. 1@*Terakado Nobuaki 1, Tanaka Keiji 1 |
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2 |
On simultaneous measurements of photo-induced volume change and photo-induced defect creation in a-As2Se3 films |
Gifu Univ. 1,YM SYSTEMS INC. 2@Nakagawa Nozomu 1,Shimakawa koichi 1,Itoh Takashi 1,Ikeda Yutaka 2 |
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3 |
Optical-torque deformations in chalcogenide flakes induced by linearly polarized light |
Hokkaido Univ 1 @Tanaka Keiji 1 |
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4 |
ESR study on Κc-Si thin films deposited on various textured substrates |
Osaka Univ. 1
@*kurihara masanori 1, sobajima yasushi 1, toyama toshihiko 1, matsuda akihisa 1, okamoto hiroaki 1 |
| £ |
5 |
Electronic properties of undoped hydrogenated microcrystalline germanium thin films |
AIST 1, ITRI 2, Tokyo Tech. 3@*Chang Chia-Wen 1,2,3, Matsui Takuya 1, Kondo Michio 1,3 |
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Break 11:15`11:30 |
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6 |
Grain Refinement and Deformation Twinning of Bi-Sb Solid Alloy under Strong Gravitational Field |
Kumamoto Univ. 1, JAEA. 2@*Yusuke Iguchi 1, Rabaya Bagum 1, Masao Ono 2, Ting Hao 2, Satoru Okayasu 2, Tsutomu Mashimo 1,2 |
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7 |
Electrical properties of polycrystalline GaInAs grown on glass substrates by MBE (II): Temperature dependence |
Shimane Univ. 1@*Yasutomo Kajikawa 1, Masanao Takushima 1, Shin-ya Takami 1, Yoshichika Torii 1, Takuya Okuzako 1, Minoru Ohsaki 1 |
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8 |
Thermal Stability of Eu Complex Encapsulated by Sol-Gel Glass |
Saitama Univ.1, Mitsubishi Chemical Group, Sci. Tech. Res. Center, Inc.2@S. Yamauchi1, T. Fukuda1, E. Kin1, H. Ohara2, T. Yokoo2, N. Kijima2, and N. Kamata1 |
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9 |
Molecular Dynamics Study on Structure of Interface Formed by Binding Flat Silica Glass Surfaces at High Temperature V |
Univ. of Fukui 1, Univ. of Fukui 2,@*Tanaka Mitsuya 1, Kuzuu Nobu 2 |
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10 |
Effect of Suppression of Devitrification by Chlorine-containing Silica Glass (IV) |
Fukui Natinal Col. Tech. 1, Fukui Univ.@2@Horii Naohiro 1, Inouye Akihiro 1, Houdou Ryouta 1, Kuzuu Nobu 2 |
| £ |
11 |
Pretreatment and Temperature Effects on Rice Husk Silica Prepared by Combustion |
Toyota Technological Inst. 1, Chulalongkorn Univ. 2@*Xiong Liangming 1, Saito Kazuya 1, Wada Shigetaka 2 |
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Lunch 13:00`14:00 |
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| 4p-ZD-@/ II |
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1 |
Structure and optical properties of the 50Bi2O3-50B2O3 glass |
Tohoku Univ. 1@*Hirotoshi Yasunaga 1, Hirokazu Masai 1, Yoshihiro Takahashi 1, Takumi Fujiwara 1 |
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2 |
Correlation of glass structure,crystallization behavior and second-order optical nonlinearityon BaO-TiO2-GeO2 oxide Glass with B2O3 |
Tohoku Univ.1@Yoshiki Yamazaki 1, Hirokazu Masai 1, Yoshihiro Takahashi 1, Takumi Fujiwara 1 |
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3 |
Fabrication of laser-induced LiNbO3 crystal patterning in glass and the reducing of absorption ions |
Nagaoka Univ. Tech. 1, Lehigh Univ. 2@*Tsuyoshi Honma 1, Takayuki Komatsu 1, Donghui Zhao 2, Himanshu Jain 2 |
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4 |
Preparation of crystallized glass for application of fiber-type devices |
Tohoku Univ. 1. Res. Center, Asahi Glass Co. Ltd. 2@*Masai Hirokazu 1, Takahashi Yoshihiro 1, Fujiwara Takumi 1, Ohara Seiki 1,2, Kondo Yuki 2, Sugimoto Naoki 2, Honma Tsuyoshi 3, Komatsu Takayuki 3 |
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5 |
Fabrication of functional nonlinear optical fibers with polarization oriented structure |
Tohoku University 1, Research Center, Asahi Glass Co. Ltd 2@*Naoki Iwafuchi 1, Hirokazu Masai 1, Yoshihiro Takahashi 1, Takumi Fujiwara 1, Seiki Ohara 1,2, Yuki Kondo 2, Naoki Sugimoto 2 |
| ’ |
6 |
Crystallization behavior of optical fibers with multi layered structure for fiber-type electro-optic devices |
Tohoku University 1, Research Center, Asahi Glass Co. Ltd 2, Nagaoka Univ. Tech. 3@*Naoki Iwafuchi 1, Hirokazu Masai 1, Yoshihiro Takahashi 1, Takumi Fujiwara 1, Seiki Ohara 1,2, Yuki Kondo 2, Naoki Sugimoto 2, Tsuyoshi Honma 3, Takayuki Komatsu 3 |
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7 |
Optical Functionality of Ba2TiGe2O8 Crystalline Thin Film |
Tohoku Univ.@*Ogawa Ryoh 1, Masai Hirokazu 1, Takahashi Yoshihiro 1, Fujiwara Takumi 1 |
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8 |
Formation of periodic structure by laser irradiation technique in BaO-TiO2-GeO2 glass thin film |
Tohoku Univ. 1, Nagaoka Univ. Tech. 2@*Kodera Teruaki 1, Ogawa Ryoh 1, Masai Hirokazu 1, Takahashi Yoshihiro 1, Fujiwara Takumi 1, Honma Tsuyoshi 2, Komatsu Takayuki 2 |
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Break 16:00`16:15 |
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9 |
60Co $\gamma$-ray-induced intrinsic defect processes in amorphous SiO2 of different fluorine concentrations |
JST 1, TMU 2, TITech 3, Univ. Latvia 4@*Koichi Kajihara 1,2, Masahiro Hirano 1,3, Linards Skuja 1,4, Hideo Hosono 1,3 |
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10 |
Proton conductivity and Raman scattering of Phosphate glasses |
Aoyama Gakuin Univ 1,Kobe Univ 2,NIMS 3,KFT 4@*Toyoda Yasufumi 1,Mizusaki Soichiro 1,Nagata Yuziro 1,Samata Hiroaki 2,Ozawa Tadashi 3,Noro Yoshihiko 4 |
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11 |
Boson peak of multi-component system glass in heating process |
Tohoku Univ. 1, NIMS 2@*Takahashi Yoshihiro 1, Masai Hirokazu 1, Fujiwara Takumi 1, Osada Minoru 2 |
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12 |
Broad-Band Laser Emission from Color Centers inside MgO Microcrystals |
Kobe Univ@Daisuke Okutsu, Takashi Uchino |
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13 |
Effect of cation-addition on photoluminescent properties in synthetic bazirite |
Tohoku Univ.@*Iwasaki Kenichiro 1, Masai Hirokazu 1, Takahashi Yoshihiro 1, Fujiwara Takumi 1. |
|
14 |
Application of Badger's rule to benitoite- and fresnoite-type compounds |
Tohoku Univ.@*Takahashi Yoshihiro 1, Masai Hirokazu 1, Fujiwara Takumi 1 |
| 16.2 Process Technologies |
| Sept. 4 10:00`15:30 |
| 4a-ZC-@/ II |
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1 |
Fabrication of amorphous silicon thin films by reactive CVD with Si2H6 and F2 and their TFT application |
Imaging Science and Engineering Lab. Tokyo Inst. of Tech. 1@Sasaki Naoto 1, Hanna Junichi 1 |
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2 |
Mono-crystalline silicon thin films homo-epitaxial growth by the reactive thermal CVD system |
Tokyo Inst. of Tech.1, AIST RCPV 2@*Minowa Akihisa 1, Kondo Michio 1,2 |
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3 |
Evaluation of Hydrogenated Amorphous Silicon Carbide Multilayer |
Tokyo Denki Univ. 1 @*T.Wagai 1, M.Anzai 1, M.Motohashi 1, K.Homma 1 |
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4 |
Free Carrier Absorption in ZnO films III |
Gifu Univ. 1, CIPS 2@*Matsuyama Kenta 1, Matsuoka Daisuke 1, Itoh Takashi 1 2, Koichi Shimakawa 1 2 |
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5 |
The application of TiO2 thin films deposited by Hot-Wire CVD method as protecting material of TCO to Si thin films solar cells |
Gifu Univ. 1@*Masuda Toshiro 1, Iida Tamio 1, Koie Ryousuke 1, Ueno Hiroyuki 1, Sugiura Yuta 1, Narita Tomoki 1, Ogawa Shunsuke 1, Natsuhara Hironori 1, Yoshida Norimitsu 1, Nonomura Shuichi 1 |
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Break 11:15`11:30 |
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6 |
Photoconductive evaluation of alumina MIS gate interface formed by catalytic CVD |
Kanagawa Inst. Tech.@Ogita Yoh-Ichiro 1, Ohsone Satoshi 1, Iwamoto Naoyuki 1, Uematsu Daiki 1, Yamashita Yuusuke 1 |
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7 |
Study on catalytic creation of alumina using Cat-CVD |
Kanagawa Inst. Tech.@Ogita Yoh-Ichiro 1, Kudoh Tsugutomo 1, Iwai Ryohei 1 |
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8 |
Fabrication of Microcrystalline Silicon Thin Films at Low Temperature by Microwave Remote-Plasma Enhanced Chemical Vapor Deposition |
Tokyo University of Agri. & Tech 1@Yoshiba shuhei 1,Supajariyawichai Piyasak 1,Jeon Minsung 1,Kamisako Koichi 1 |
|
9 |
The micro-crystalline silicon thin films prepared by the chemical transport method |
Tokai Univ. 1@*Tomita Yuki 1, Kuroki Yusuke 1, Isomura Masao 1 |
|
10 |
Effect of inert gas introduction in the chemical transport deposition for microcrystalline silicon germanium. |
Tokai Univ. 1@*Uesaka Yusuke 1, Kawauchi Hiromi 1, Isomura Masao 1 |
|
11 |
Optical emission spectroscopy of high rate growth \muc-Si films |
Grad. School of Eng. Sci., Osaka Univ.@Takuya Higuchi, Jakapan Chantana, Yasushi Sobajima, Toshihiko Toyama, Akihisa Matsuda, Hiroaki Okamoto |
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Lunch 13:00`14:00 |
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| 4p-ZC-@/ II |
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1 |
Flexibility of stainless steel with an insulation film prepared from polydimethylsiloxane and metal alkoxide |
NIPPON STEEL CORPORATION@*Ogura Toyoshi 1,Yamada Noriko 1,Kubo Yuji 1 |
| ’ |
2 |
Electrical properties of thin SiN films by HW method using forming gas |
Kyushu Inst. of Tech 1@Ikuhiro Nakamura 1, Inao Haruki 1, Hasan Syed 1, Izumi Akira 1 |
| ’ |
3 |
Surface nitridation of Si(100) by HW method using forming gas |
Kyushu Inst. of Tech@Haruki Inao, Ikuhiro Nakamura, Hasan Syed, Akira Izumi |
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4 |
Poly-SiGe thin films prepared by Aluminium-Induced Crystallization |
Tokai Univ. 1,TIRI 2@*Takehiro Iwasa 1, Isao Nakamura 2, Masao Isomura 1 |
|
5 |
Thin-film poly-Si heterojunction solar cells using poly-Si films formed by flash lamp annealing |
Jpn. Adv. Inst. Sci. & Tech.@*Hiroyuki Takemoto 1,Kazuhiro Shiba 1,Tomoko Fujiwara1, Yohei Endo1, Shogo Nishizaki 1,Young Rae Jang 1,Keisuke Ohdaira 1, and Hideki Matsumura 1 |
|
6 |
Influence of preheating and pulse duration on crystalization of a-Si by flash lamp annealing |
Jpn. Adv. Inst. Sci. & Tech. 1@*Shiba Kazuhiro 1, Takemoto Hiroyuki 1, Nishizaki Shogo 1, Jang Young Rae 1, Ohdaira Keisuke 1, Matsumura Hideki 1 |
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Break 15:30`15:45 |
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7`13@15:45`17:15i16.3 Devicesj |
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| 16.3 Devices |
| Sept. 4 15:45`17:15 |
| 4p-ZC-@/ II |
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1`6@14:00`15:30i16.2 Process Technologiesj |
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Break 15:30`15:45 |
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7 |
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@ |
|
8 |
Development of the flat type TCO substrate with optical confinement for the Si thin film solar cell |
Grad. School of Eng. Science, Osaka Univ.@Y. Sobajima, Y. Kubota, T. Higuchi, T. Kawabe, J. Chantana, T. Toyama, A. Matsuda, H. Okamoto |
| ’ |
9 |
Effects of the texture of ZnO on the performance of hydrogenated microcrystalline silicon solar cells |
Grad.Sch.Science & Eng.Tokyo.Tech. 1,PVREC Tokyo Tech. 2@*Hayashi Teruaki 1,Hiza Syuuiti 1,Yamada Akira 1,2,Konagai Makoto 1,2 |
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10 |
Light trapping in thin-film silicon solar cells using self-ordered structures |
AIST@Hitoshi Sai 1, Hiroyuki Fujiwara 1, Michio Kondo 1 |
| ’ |
11 |
Theoretical Analysis of Silicon-Based Thin Film Triple-Junction Solar Cells Considering Defect Density Dependence |
Grad. Sch. Science & Eng. Tokyo Tech 1, PVREC Tokyo Tech 2@Yunaz Ihsanul Afdi 1, Yamada Akira 1,2, Konagai Makoto 1,2 |
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12 |
Evaluation of the valence band offset at semiconductor heterojunction for solar cell application. |
Tokyo Inst. of Tech. 1, AIST RCPV 2@*Tetsuya Kaneko 1, Michio Kondo 1 2 |
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13 |
Fabrication of Back-Contact Heterojunction Solar Cells Using Cat-CVD a-Si and SiNx films. |
Jpn. Adv. Inst. Sci. & Tech. 1,@*K.Koyama 1, K.Ohdaira 1, H.Matsumura 1 |