15 Science and Technology of Crystals
15.1 Bulk Crystal Growth
Sept. 3 13:30〜17:45
3p-CF-　/ I
▲ 1 Functional 12CaO-7Al2O3 crystals grown by the micro-pulling-down method IMRAM Tohoku Univ. 1　Liu Lijuan 1, Kagamitani Yuji 1, Ehrentraut Dirk 1, Yokoyama Chiaki 1, Ishiguro Toru 1, Fukuda Tsuguo 1
2 Crystal Growth and Scintillation Properties of Tm:BaF2 Single Crystals IMRAM, Tohoku Univ. 1, Tokuyama Corp. 2　Abe Naoto 1, Yokota Yuui 1, Yanagita Takayuki 1, Kim Kyoung Jin 1, Kawaguchi Noriaki 1,2, Nara Fumiko 1, Yoshikawa Akira 1
△ 3 Crystal growth and scintillation properties of Ce doped LiYF4 single crystals. IMRAM Tohoku Univ. 1, Tokuyama Corp. 2, CYRIC Tohoku Univ. 3　*Yokota Yuui 1, Yanagida Takayuki 1, Kawaguchi Noriaki 1,2, Kim Kyoung Jin 1, Nara Fumiko 1, Abe Naoto 1, Yoshikawa Akira 1, Miyake Masayasu 3, Baba Mamoru 3
△ 4 Improvement of the scintillation properties of the garnet-based scintillator by the chemical substitution Univ. Tokyo 1, IMRAM Tohoku Univ. 2, Inst. Physics AS CR 3　Ogino Hiraku 1, Yuui Yokota 2, Yoshikawa Akira 2, Nikl Martin 3, Junichi Shimoyama 1, Kohji Kishio 1
▲ 5 Grating period for VUV-SHG by the QPM-technique using BaMgF4 NIMS 1, Hitachi Chem. 2　*E.G. Víllora 1, K. Shimamura 1, M. Aoshima 2, K. Sumiya 2
6 Crystal growth of CsLiB6O10 in dry atmosphere Graduate School of Eng., Osaka Univ. 1, CREST-JST 2　*Y. Shimizu 1,2, M. Nishioka 1,2, M. Yoshimura 1,2, T. Kawamura 1,2, T. Wang 1,2,Y. Kaneda 1,2, Y. Kitaoka 1,2, Y. Mori 1,2, T. Sasaki 1,2
7 Float zone growth and fluorescence properties of rare-earth doped vanadate single crystals Hokkaido Univ. 1　Higuchi Mikio 1, Sasaki Ryo 1, Takahashi Junichi 1
8 Effects of tiled focusing heating on solid-liquid boundary shape during the crystal growth by floating zone method Univ. of Yamanashi 1, Crystal Systems Inc. 2　*Watauchi Satoshi 1, Sarker MD. Abdur razzaque 1, Nagao Masanori 1, Watanabe Takashi 2, Tanaka Isao 1
Break 15:30〜15:45
9 The lateral distribution of dopants in the crystals grown by the micro-pulling-down method ~ the example of YAG~ IMR Tohoku Univ. 1, IMRAM Tohoku Univ. 2 　* Simura Rayko 1, Yoshikawa Akira 2, Uda Satoshi 1
10 Segregation and precipitation of B in CZ-Ge crystal growth Tohoku Univ. 1　Taishi Toshinori 1, Murao Yu 1, Ohno Yutaka 1, Yonenaga Ichiro 1
11 Numerical analysis of Si2N2O distribution in unidirectionally solidified multicrystalline silicon Kyushu Univ. 1, RIAM,Kyushu Univ. 2, Xi'an Jiaotong Univ. 3　*Hisamatsu Sho 1, Matsuo Hitoshi 1, Nakano Satoshi 2, Liu Lijun 2,3, Kangawa Yoshihiro 1,2, Kakimoto Koichi 1,2
▲ 12 Dislocation density evaluation in a silicon ingot of unidirection solidification process with a simulation model RIAM, Kyushu Univ. 1, ENP, Xi'an Jiaotong Univ. 2　*Chen Xuejiang 1, Nakano Satoshi 1, Liu Lijun 1,2, Kakimoto Koichi 1
13 The relationship between oxygen concentration and crucible rotation during solidification of multicrystalline Si for solar cells Kyushu Univ. 1, RIAM, Kyushu Univ. 2, Xi'an Jiaotong Univ. 3, Toyota Technological Inst. 4, Univ. of Hyogo 5　*Hitoshi Matsuo1, R. Bairava Ganesh1, Satoshi Nakano2, Lijun Liu2,3, Yoshihiro Kangawa1,2,Koji Arafune4,5, Yoshio Ohshita4, Masafumi Yamaguchi4, Koichi Kakimoto1, 2
14 Influence of crucible rotation on oxygen incorporation into the grown multicrystalline silicon for solar cell – a theoretical approach RIAM, Kyushu Univ. 1, ENP, Xi'an Jiaotong Univ. 2, Kyushu Univ. 3　*Nakano Satoshi 1, Liu Lijun 1, 2, Chen Xuejiang 1, Kangawa Yoshihiro 1, 3,
Kakimoto Koichi 1, 3
15 Control of Nucleation Rate for Protein Crystals with an External Electric Field IMR, Tohoku Univ.　*Koizumi Haruhiko 1, Katoh Keisuke 1, Uda Satoshi 1
16 Three-dimensional calculation of natural convection heat transfer in a solvothermal autoclave AIST 1, Fukuda Cry. Lab. 2, Tohoku Univ 3, Osaka Pref. Univ. 4　Yoshio Masuda 1, Akira Suzuki 1, Yutaka Mikawa 2, Chiaki Yokoyama 3, Takao Tsukada 4
15.2 II-VI Crystals
Sept. 4 13:00〜16:00
4p-CF-　/ I
1 Study of ZnSSe Avalanche Photodiode (APD) in Blue-Ultraviolet Wavelength region -Control of side dark current by p-type semiconductor Guard ring- Tottori Univ. 1　*Nomura Mari 1, Inagaki Yusuke 1, Nobe Kazuki 1, Tani Tatsuya 1, Miki Kohei 1, Katada Daisuke 1, Ohshita Yuta 1, Tanaka Ken 1, Abe Tomoki 1, Kasada Hirofumi 1, Ando Koshi 1
2 Photo-pumped green lasing operations of BeZnSeTe/(MgSe/BeZnTe) double-hetero (DH) structures grown on InP substrates Sophia Univ. 1　*Tomoya Ebisawa 1,Ichirou Nomura 1,Katsumi Kishino 1,Kunihiko Tasai ,Hitoshi Nakamura ,Tsunenori Asatsuma ,Hiroshi Nakajima
△ 3 Development of Blue Stark-Effect Waveguide-Modulators using ZnSe/ZnMgSSe Asymmetric Coupled Quantum Wells and its Low Voltage Operation Tottori Univ. 1　Kozeni Hiroki 1,Nishiguchi Toshifumi 1,Fujinuma Ryou 1,Yamane Noritsugu 1,Abe Tomoki 1,Kasada Hirofumi 1,Ando Koushi 1
4 XRD characterization of ZnSe based coupled DQW structure Yamanashi Univ.1　Kodama Kazuki 1,Ohmori Kenta 1,Fukasawa Sakyou 1,Muranaka Tsutomu 1,Nabetani Youichi 1,Matsumoto Takashi 1
5 Interaction between magnetic/non-magnetic semiconductor coupled DQWs Yamanashi Univ. 1　* = Omori Kenta 1, Kodama Kazuki 1, Muranaka Tsutomu 1, Nabetani Youichi 1, Matsumoto Takashi 1
Break 14:15〜14:30
6 RHEED specular spot intensity during the fabrication of doubly stacked CdSe dot structure Okayama Univ. of Sci. 1, Miyazaki Univ. 2　Ii Masakazu 1, Yoneta Minoru 1, Sato Yuichi 1, Shintani Motoyuki 1, Yoshino Kenji 2, Ohishi Masakazu 1, Saito Hiroshi 1
△ 7 Molecular beam epitaxial growth and photoluminescence characterization of two-dimensional Pb1-xSnxTe/CdTe quantum wells Osaka Inst. of Tech.　*Kawaguchi Ryo 1, Hotei Takanori 1, Koike Kazuto 1, Yano Mitsuaki 1
8 Surface treatent with hydrogen of ZnTe Hokkaido Inst.of Tech　*Kyou Kei 1.Ichinohe Yoshihiro 1.Honma Kazuomi 1.Imai Kazuaki 1.Swada Takayuki 1.Suzuki Kazuhiko 1.Kimura Nobuyuki 1.Kimura Naohito 1.
9 Fabrication of (Zn,Cu)xO thin films by rf magnetron sputtering Graduate School of Eng. Sci., Osaka Univ. 1, Kaneka Corp. 2　*Shoji Taisaku 1, Adachi Daisuke 2, Toyama Toshihiko 1, Okamoto Hiroaki 1
△ 10 The source gas dependency on ZnCuO alloy films grown by RPE-MOCVD RIE. Shizuoka Univ.1,　Hu Bo 1, Adachi Masahiko 1, Aosima Tsuyoshi 1, Nakamura Atsushi 1, Temmyo jiro 1
▲ 11 Optical analysis of self-assembled ZnO nano-wires grown by RPE-MOCVD RIE Shizuoka Univ.　Earfan Hamid, Masahiko Adachi, Atsushi Nakamura, Jiro Temmyo
15.3 III-V Epitaxial Growth
Sept. 2
2a-CF-　/ I
 
Short Presentation (5min.) 9:30〜11:40
2a-CF-1〜23　Poster Session 13:00〜15:00
1 Site-Controlled In(Ga)As Quantum Dots Fabricated by the Nano-Jet Probe Method AIST 1, NEC 2, Univ. of Tsukuba 3　*Ohkouchi Shunsuke 1,2, Ozaki Nobuhiko 3, Sugimoto Yoshimasa 3, Ishikawa Hiroshi 1, Asakawa Kiyoshi 3
2 Growth condition dependence of one-dimensionally ordered AlInAs quantum dots on a patterned substrate Nagoya Univ.　*Tatsuya Nishiwaki 1, Masahito Yamaguchi 1, Nobuhiko Sawaki 1
3 Ordering of Ga droplets on GaAs (110) substrate by droplet epitaxy NIMS 1　*Mano Takaaki 1, Kuroda Takashi 1, Noda Takeshi 1, Sakoda Kazuki 1
4 A cluster of InAs dots fabricated by droplet epitaxy and their optical properties NIMS 1, TTI 2　*Noda Takeshi 1, Mano Takaaki 1, Kuroda Takashi 1, Sakoda Kazuaki 1, Sakaki Hiroyuki 1,2
5 Optical properties of GaSb dots on GaAs (100) by droplet epitaxy NIMS 1, Toyota Tech. Inst. 2　*Kawazu　Takuya 1, Mano Takaaki 1, Noda Takeshi 1, Akiyama Yoshihiro 1, Sakaki Hiroyuki 1,2
6 PL properties at Room Temperature of low-density InAs Quantum dots on GaAs(001) fabricated by MBE Pioneer 1,NICT 2,Univ.Tokyo 3　*Sawado Yoshinori 1,Yoshizawa Katsumi 1,Akahane Kouichi 2,Yamamoto Naokatsu 2,Kawazoe Tadashi 3,Ohtsu Motoichi 3
7 Evolution of shape of InAs quantum dots at different growth temperatures JAEA 1　*Takahasi Masamitu 1
8 Direct impurity doping into InAs quantum dots by controlling the self-assembled process The Grad. School of Eng., Kobe Univ.　Kido Satoshi 1, Sasayama Kengo 1, Inoue Tomoya 1, Kita Takashi 1, Wada Osamu 1
9 Control of indium segregation from InAs quantum dots by atomic-layer nitrogen doping Kobe Univ. 1　Inoue Tomoya 1, Mamizuka Masataka 1, Kojima Osamu 1, Kita Takashi 1, Wada Osamu 1
10 Control of exciton decay time in nitridized InAs quantum dots Graduate School of Engineering, Kobe Univ.　Mamizuka Masataka, Kojima Osamu Inoue Tomoya, Kita Takashi, and Wada Osamu
Break 10:20〜10:35
11 Improved photoluminescence properties of closely stacked InAs QDs on GaSb/GaAs layers with self-formed GaAs nanoholes Univ. of Electro-Commun. 1　Sekiguchi Syuji 1,Yamaguchi Koichi 1
12 Annealing effects of high-density InAs quantum dots on GaAsSb/GaAs layers (2) Univ. of Electro-Commun. 1　*Hirose Masayuki 1,Yamaguchi Koichi 1
▲ 13 Tunable intersubband energy spacing of InAs/GaAs self assembled quantum dots by rapid thermal annealing ATR, Wave Engineering Laboratories, Department of Nonlinear Science 1.　*Shanmugam Saravanan 1, Takahisa Harayama 1
14 Embedding growth of GaAs thin layer on Sb-irradiated InAs quantum dots Univ. of Electro-Commun. 1　*Fumitoshi Murawaki 1, Koichi Yamaguchi 1
15 Dependency of InAs QDs using GaxIn1-xAs second cap layer in the Double-cap procedure Sophia Univ.　Akaishi Masataka 1, Saito Yasuhito 1, Shimomura Kazuhiko 1
16 MBE growth of self-assembled InAs quantum dots embedded in strain-relaxed In0.35Ga0.65As barriers Univ. of Tokushima 1.　*Takahashi Tomoya 1, Mukai Takuya 1, Morita Ken 1, Kitada Takahiro 1, Isu Toshiro 1
17 Fabrication of InGaAs quantum dot superlattice on GaAs(311)B by strain compensation method Univ. of Tsukuba Inst. of Applied Physics 1, The Univ. of Tokyo RCAST 2　*Shoji Yasushi 1, Oshima Ryuji 2, Takata Ayamai 1, Uedono Akira 1, Okada Yoshitaka 1,2
18 Optical studies on InAs/InGaAs/GaNAs strain compensated quantum dots grown on GaAs(001) Univ. of Tsukuba, Inst. of Applied Physics 1, The Univ. of Tokyo, RCAST 2　*Takata Ayami 1, Oshima Ryuji 2, Shoji Yasushi 1, Shigekawa Hidemi 1, Okada Yoshitaka 1,2
19 Emission characteristics of InAs QDs with GaInP cover layer P&I Lab. Tokyo Tech.　*Sengoku Tomoyuki 1, Suzuki Ryoichiro 1, Nemoto Kosuke 1, Tanabe Satoru 1, Koyama Fumio 1, Miyamoto Tomoyuki 1
20 MBE growth of self-assembled InAs/GaP(N) quantum dot structures Toyohashi Univ. Tech. 1, ISSRC 2　Noma Ryosuke 1, *Umeno Kazuyuki 1, Mitsuyoshi Saburo 1, Furukawa Yuzo 1,2, Okada Hiroshi 1,2, Yonezu Hiroo 1, Wakahara Akihiro 1,2
21 MOVPE Growth of Closely Stacked Quantum Dots on InP(001) and Fabrication of DFB Lasers Fujitsu 1, Fujitsu Lab 2, QD laser 3, IIS, RCAST, INQIE Univ. of Tokyo 4　*Kawaguchi Kenichi 1,2, Matsuda Manabu 2, Ekawa Mitsuru 2, Yamamoto Tsuyoshi 2, Tanaka Yu 1-3, Sugawara Mitsuru 1-3, Arakawa Yasuhiko 4
22 Highly stacked quantum dot laser fabricated using a strain compensation technique NICT　Akahane Kouichi 1,Yamamoto Naokatsu 1,Tsuchiya Masahiro 1
23 Multi-color InAs-QDs grown on selective areas for optical integrated devices Univ. of Tsukuba 1, NEC Corp. 2, NIMS 3　*Ozaki Nobuhiko 1, Takata Yoshiaki 1, Ohkouchi Syunsuke 1,2, Ikeda Naoki 3, Watanabe Yoshinori 1, Sugimoto Yoshimasa 1,3, Asakawa Kiyoshi 1,3
15.3 III-V Epitaxial Growth
Sept. 3
3a-CF-　/ I
 
Short Presentation (5min.) 9:30〜11:25
3a-CF-1〜20　Poster Session 13:00〜15:00
1 Theoretical investigation for structural stability of GaAs layers at Au/GaAs(111)A interface Mie Univ.　*Toru Akiyama, Yuya Haneda, Kohji Nakamura, Tomonori Ito
2 Theoretical investigation on the structural stability of GaP nanowires with {111} facets Mie Univ. 1　*Tomoki Yamashita 1, Toru Akiyama 1, Kohji Nakamura 1, Tomonori Ito 1
3 Fabrication of GaAs/AlGaAs core-shell nanowires on Si substrate by selective-area MOVPE. G.S. IST and RCIQE, Hokkaido Univ. 1　*Katsuhiro Tomioka 1, Yasunori Kobayashi 1, Junichi Motohisa 1, Shinjiroh Hara 1, Takashi Fukui 1
4 Examination of nanowire growth condition to fabricate hetero structure by selective-area MOVPE Hokkaido Univ. 1,Graduate School of IST and RCIQE 2　*Hayashida Atsushi 1 2,Yoshida Hiroatsu 1 2,Sato Takuya 1 2,Motohisa Jyunichi 1,Hara Shinjiroh 1 2,Fukui Takashi 1 2
5 VLS growth of GaAs nanowire bridge in a trench of a patterned silicon substrate Nagoya Univ. 1　*Ichihashi Hirohide 1, Paek Jihyeon 1, Nishiwaki Tatsuya 1, Yamaguchi Masahito 1, Sawaki Nobuhiko 1
△ 6 Fabrication of pattern by direct electron beam irradiation on GaAs substrate N.I.T. 1　*Yokota Hiroshi 1, Tsunashima Keiichi 1, Iizuka Kanji 1, Okamoto Hiroshi 1
△ 7 Formation of InGaAs Pattern on GaAs Substrate by Electron Beam Irradiation N.I.T.　*Tsunashima Keiichi 1, Yokota Hiroshi 2, Iizuka Kanji 3, Okamoto Hiroshi 4
8 TEM-observation and growth-mode of In0.65Ga0.35As QWRs grown on (775)B InP substrates 3. Graduate school of Science and Engineering, Ehime Univ. 1,Graduate school of Science and Engineering,Osaka Univ. 2　*Mouri Naoyoshi 1, Imadu Shinzirou 1, Matsuki Toyokazu 1, Shimomura Satoshi 1, Sasahata Yoshihumi 2
9 GaAsBi films grown on (4 1 1)A GaAs substrate by MBE Ehime Univ.　*yamaguchi daisuke M1,Ishikawa Tomoki M1,Mouri Naoyoshi M2,Matsugi Toyokazu M2,Imazu Shinjirou M2,Shimomura Satoshi P
10 GaAs/GaAsBi superlattices grown on (411)A GaAs substrates by MBE Graduate School of Sci. and Eng., Ehime Univ.　Ishikawa Tomoki 1,Yamaguti Daisuke 1,Mouri Naoyosi 1,Matuki Toyokazu 1,Imazu sinzirou 1, Simomura Satosi 1
Break 10:20〜10:35
11 P-type doping efficiency in Be-doped InGaAsSb grown on InP by MOMBE NTT Photonics Labs.1　*Manabu Mitsuhara1, Tomonari Sato1, Yasuhiro Kondo1, Hideki Fukano1
12 TEM observation of GaAsSb and InGaAs/GaAsSb type II QW on InP substrates Osaka Prefecture Univ. 1, Sumitomo Electric Industries Ltd 2　*Yuichi Kawamura1, Kohei Miura2, Mitutaka Tsubokura2, Hirosi Okada2
13 Effect of Selenium delta-doped GaAs layer to Type-II GaAsSb/GaAs RIES 1, JSPS 2, JST-CREST 3　*Sato Mitsuru 1, Idutsu Yasuhiro 1, Jo Masafumi 1,2, Kumano Hidekazu 1, Suemune Ikuo 1,3
14 MBE growth of In0.8Ga0.2As/AlAs/AlAs0.56Sb0.44 coupled double quantum wells having thin AlAs layer AIST 1　S. Gozu 1, T. Mozume 1, R. Akimoto 1, K. Akita 1, G. W. Cong 1, H Ishikawa 1
15 Effect of low-temperature growth in AlInSb buffer layer grown on GaAs(100) by molecular beam epitaxy Tokyo Univ. of Science 1　*Uda Mizuki 1,Yabuki Takayuki 1,Hasegawa Atsushi 1,Hara Shinsuke 1,Fujishiro Hiroki 1
△ 16 Analysis of interface structures of InP/GaInAs with different growth temperatures and growth rates by X-rays CTR scattering method Graduate School of Engineering 1,VBL 2 Nagoya Univ.　*Tameoka Hiroshi 1,Mori Akiko 1,Tabuchi masao 2,Takeda Yoshikazu 1
17 Effects of crystal quality of GaAsP buffer layer on polarization in GaAs/GaAsP strained superlattice spin-polarized photocathode Nagoya University, Graduate School of Engineering 1, Daido Institute of Technology 2, Nagoya University, Graduate School of Science 3,
Osaka Prefecture University 4, Daido Steel 5, Osaka Electro-Communication University 6　Jin Xiuguang 1, Tanioku Masatoshi 1, Maeda Yuya 1, Saka Takashi 2, Fuchi Shingo 1, Ujihara Toru 1, Takeda Yoshikazu 1,Yamamoto Naoto 3, Nakagawa Yasuhide 3, Mano Atsushi 3, Okumi Shoji 3, Yamamoto Masahiro 3, Nakanishi Tsutomu 3, Horinaka Hiromichi 4, Kato Toshihiro 5, Yasue Tsuneo 6, Koshikawa Takanori 6
18 Effects of heterointerface quality on electrical characteristics of heterojunction diodes The Univ. of Electro-Communications 1　*Koizumi Atsushi 1, Nozaki Shinji 1, Chaki Kenshiro 1, Tomioka Yoshikuni 1, Uchida Kazuo 1
△ 19 TEM Observation of Phase Separation in InGaAsP Grown on GaAs Substrates by Organometallic Vapor Phase Epitaxy Osaka Univ. 1, Mitsubishi Electric Corp. 2, UHVEM., Osaka Univ. 3　*Konaka Youhei 1, Ono Kenichi 2, Terai Yoshikazu 1, Taguchi Eiji 3, Mori Hirotaro 3, Fujiwara Yasufumi 1
20 In situ passivation of GaAs(001) surface using an aluminum source in MOVPE Univ. of Tokyo 1, RCAST 2　*Yuki Terada 1, Deura Momoko 1, Yukihiro Shimogaki 1, Masakazu Sugiyama 1, Yoshiaki Nakano 2
15.3 III-V Epitaxial Growth
Sept. 4
4a-CF-　/ I
 
Short Presentation (5min.) 9:30〜11:55
4a-CF-1〜24　Poster Session 13:00〜15:00
1 Development of lateral growth in micro-channel selective-area MOVPE of InGaAs on Si Univ. of Tokyo 1, RCAST 2　*Deura Momoko 1, Hoshii Takuya 1, Takenaka Mitsuru 1, Takagi Shinichi 1, Nakano Yoshiaki 1,2, Sugiyama Masakazu 1
2 Ga content and crystal structure in micro-channel selective-area MOVPE of InGaAs on Si Univ. of Tokyo 1, RCAST 2　*Deura Momoko 1, Hoshii Takuya 1, Yamamoto Takahisa 1, Ikuhara Yuichi 1, Takenaka Mitsuru 1, Takagi Shinichi 1, Nakano Yoshiaki 1,2, Sugiyama Masakazu 1
3 Effect of crystal orientaition of microchannel on low-angle incidence microchannel epitaxy on (001) GaAs substrate Meijo Univ. 1　*Kawakami Takuya 1,Matuoka Syuji 1,Ishida Yuji 1,Naritsuka Shigeya 1,Maruyama Takahiro 1
4 Selective-area growth of GaAs on Si using an amorphous-GaAs buffer layer by direct EB-patterning Kwansei Gakuin University School of Science and Technology　Ushio Shoji 1. Matsuda Kazuhiro 1. Fukuhara Moriyasu 1. Kaneko Tadaaki 1
5 High electron mobility in semiconductor-on-insulator-InAs on Si substrates JAIST 1　*Takita Hayato 1, Kudo Masahiro 1, Tanaka Nariaki 1, Suzuki Toshi-kazu 1
△ 6 Epitaxial lateral overgrowth of GaSb on Si substrates by MOCVD CINQIE 1, IIS 2, RCAST 3, Univ. of Tokyo, Corporate R&D Center, Toshiba Corp. 4　*Kotaro Zaima 1-4, Rei Hashimoto 1-4, Mizunori Ezaki 1-4, Masao Nishioka 1,2, Yasuhiko Arakawa 1-3
7 Heteroepitaxial growth of InSb film on Si(111) surface forming on Si(100) substrate Toyama Univ. 1,Toyama Univ. VBL Univ. VBL 2 　Igarashi Hiroki 1,Mori Masayuki 1,Saito mitsuhumi 2,Iwasugi tatsuya 1,Norsuryati Binti Ahamad 1,Maezawa Kouichi 1
8 Heteroepitaxial growth of AlInSb films on Si(111) substrate via InSb bi-layer Univ. of Toyama 1, Univ. of Toyama VBL 2　*Nakatani Kimihiko 1, Saito Mitsufumi 2, Ueda Koji 1, Mori Masayuki 1, Maezawa Koichi 1
9 Initial growth of GaP layer on Si substrates using MOVPE Shizuoka Univ. 1　*Okamoto Takuya 1,Watanabe Satoru 1,Masuda Hiroyuki 1,Takagi Tatsuya 1,Fuke Syunrou 1,Takano Yasushi 1
10 Photoluminescence of Ultla–Thin Nitrided layer on GaAs substrates by using RF-MBE Meijo Univ. 1
　*Kanbayashi Daisuke 1,Mori Midori 1,Takeuchi Yoshitaka 1,Naritsuka Shigeya 1,Maruyama Takahiro 1
11 Spectriscopic ellipsometry study on the electronic structure of GaAsN alloys Saitama University 1, University of Tokyo 2　*Suzuki Naoya 1, Hijikata Yasuto 1, Yaguchi Hiroyuki 1, Yoshida Sadafumi 1, Katayama Ryuji 2, Onabe Kentarou 2
Break 10:35〜10:50
12 Influence of nitrogen incorporation at step and terrace on electrical property of GaAsN film Toyota Tech. Inst.　*Hashiguchi Taiki 1, Saito Kenji 1, Nishimura Kenichi 1, Suzuki Hidetoshi 1, Kojima Nobuaki 1, Ohshita Yoshio 1, Yamaguchi Masafumi 1
13 Annealing effect of GaAsN/GaP quantum wells grown by molecular beam epitaxy Toyohashi Univ. Tech. 1, ISSRC 2　*Kazuyuki Umeno 1, Saburo Mitsuyoshi 1, Ryosuke Noma 1, Yuzo Furukawa 1,2, Hiroshi Okada 1,2, Hiroo Yonezu 1, Akihiro Wakahara 1,2
14 Fabrication and evaluation of (In)GaPN-based LED on Si grown by OMVPE Toyohashi Univ. of Tech. 1, ISSRC 2　*Hatakenaka Susumu 1, Matsuno Fumiya 1, Nakanishi Yoshiyuki 1, Furukawa Yuzo 1 2, Okada Hiroshi 1 2, Wakahara Akihiro 1 2
15 Photoluminescence from isoelectronic traps in nitrogen δ-doped GaP (II) Saitama Univ. 1,ISSP 2,The Univ. of Tokyo 3,　*Ito Masatoshi 1,Fukushima Toshiyuki 1,Hijikata Yasuto 1,
Yaguchi Hiroyuki 1,Yoshida Sadafumi 1,Yoshita Masahiro 2,
Akiyama Hidefumi 2,Kuboya Shigeyuki 3,Katayama Ryuji 3,
Onabe Kentaro 3,
16 Photoluminescence from isoelectronic traps in N delta-doped GaAs grown on variously oriented GaAs surfaces. Saitama Univ. 1, ISSP 2, Univ. of Tokyo 3　*Fukushima Toshiyuki 1, Ito Masatoshi 1, Hijikata Yasuto 1, Yaguchi Hiroyuki 1, Yoshida Sadafumi 1, Yoshita Masahiro 2, Akiyama Hidefumi 2, Kuboya Sigeyuki 3, Katayama Ryuji 3, Onabe Kentarou 3
▲ 17 Growth and characterization of TlInGaAsN triple quantum well structures ISIR Osaka Univ.　Daivasigamani KRISHNAMURTHY 1,KIM Kangmin 1,SAKAI Yuuji 1,TANAKA Yuusuke 1,ISHIMARU Manabu 1,HASEGAWA Shigehiko 1,*ASAHI Hajime 1
18 Growth of TlInGaAsN/TlInP Multi-Layers on InP Substrate and their Characterization ISIR Osaka Univ.　Tanaka Yuusuke 1,Ryu kinkan 1,Daivasigamani Krishnamurthy 1,Hasegawa Shigehiko 1,*Asahi Hajime 1
19 Optical characterization of thick InGaAsSbN layers grown on InP substrates by MBE FSIC 1, Osaka Prefecture Univ. 2, Sumitomo Electric Industries Ltd. 3　*Yoshikawa Mao 1,2, Miura Kouhei 3, Iguchi Yasuhiro 3, Kawamura Yuichi 1,2
20 Role of In partial pressure on Ga(In)NAsSb growth by atomic hydrogen-assisted RF-MBE The Univ. of Tokyo, School of Eng. 1, The Univ. of Tokyo, RCAST 2, Univ. of Tsukuba, Inst. of Applied Physics 3　*Miyashita Naoya 1, Ichikawa Shuhei 3, Okada Yoshitaka 2,3
21 Fabrication and evaluation of GaAs/GaInNAsSb heterojunction compound solar cells Univ. of Tsukuba, Inst. of Applied Physics 1, The Univ. of Tokyo, RCAST 2　*Shuhei Ichikawa 1, Naoya Miyashita 2, Akira Uedono 1, Haruhiro Oigawa 1, Yoshitaka Okada 1,2
22 Experimental Study on Static Dielectric Constant of GaInNAs Osaka Univ. 1, Univ. of Miyazaki 2　Uchiyama Masayuki 1, *Morifuji Masato 1, Kondow Masahiko 1, Momose Hideki 1, Fukushima Shin'ichi 2, Fukuyama Atsuhiko 2, Ikari Tetsuo 2
△ 23 Unintentional incorporation of Al during the growth of molecular beam epitaxy related to N2 gas introduction and Al
vapor pressure		 Osaka Univ　*F. Ishikawa, M. Kato, M. Uchiyama, K. Higashi, S.D. Wu, and M. Kondow
△ 24 Optical properties of InAsN thin films The Univ. of Tokyo 1　*Kuboya Shigeyuki 1, Kuroda Masayuki 1, Nishio Susumu 1, Thieu Quang Tu 1, Katayama Ryuji 1, Onabe Kentaro 1
15.4 III-V Nitride Epitaxial Growth
Sept. 2 9:30〜12:30
2a-CA-　/ I
1 Influence of oxygen incorporation on AlN growth using Li3N and Al Kyushu Univ. 1, RIAM, Kyushu Univ. 2　*Nagano Toshihiko 1, Kangawa Yoshihiro 1,2, Kakimoto Koichi 1,2
2 Doping effect of GaN crystals grown by the ammonothermal method IMRAM Tohoku Univ.　*Kagamitani Yuji 1, Ishinabe Takayuki 1, Kuribayashi Taketo 1, Yokoyama Chiaki 1, Ishiguro Toru 1, Fukuda Tsuguo 1
3 Cathodoluminescence studies of GaN epitaxial films grown by seeded ammonothermal growth using an acidic mineralizer IMRAM-Tohoku Univ. 1　*Hazu Kouji 1, Kagamitani Yuji 1, Onuma Takeyoshi 1, Ishinabe Takayuki 1, Kuribayashi Taketo 1, Yokoyama Chiaki 1, Ishiguro Tohru 1, Fukuda Tsuguo 1, Chichibu F. Sigefusa 1
4 Growth of GaN crystals by GaH-VPE method using GaN powder as a starting material Osaka Univ. 1 　*Yamada Norihide 1, Imade Mamoru 1, Kishimoto Hiroki 1, Kawamura Fumio 1, Yoshimura Masashi 1, Kitaoka Yasuo 1, Sasaki Takatomo 1, Mori Yusuke 1
5 Luminescence study of GaN single crystals grown by Na flux method using Na vapor IMRAM-Tohoku Univ. 1　Onuma Takeyoshi 1, Yamada Takahiro 1, Yamane Hisanori 1, Chichibu F. Shigefusa 1
Break 10:45〜11:00
6 Solution Growth of Gallium Nitride by using Microwave Plasma Process Shizuoka Inst. Sci. and Tech.1, Res. Inst. Elect. Shizuoka Univ.2　*Ozawa Tetsuo 1, Matsuura Takeshi 1, Dohi Minoru 1, Tanaka　Akira 2, Hayakawa Yasuhiro 2
7 Conductivity control of GaN crystals grown by Na-flux method Osaka Univ. 1, JRCM 2
　Kawamura Fumio 1, Kitaoka Yasuo 1, *Mori Yusuke 1, Sasaki Takatomo 1,2
8 Selective MOCVD growth of AlGaN film on GaN/Sapphire substrate with evaporated stripe metal films Univ. of Tokushima 1　*Ryo Matsuoka 1, Katsusi Nishino 1, Yoshiki Naoi 1, Shiro Sakai 1
9 The GaN growth on the random-cone patterned sapphire substrate by MOVPE Graduate School of Science and Engineering,Yamaguchi Univ. 1,Inst of Semiconductor Technologies,ULVAC,Inc. 2　*Murata Tohru 1,Okada Narihito 1,Tadatomo Kazuyuki 1,Huang-Chong Chang 2,Watanabe Kazuhiro 2
▲ 10 Low-dislocation density Al0.5
Ga0.5N on grooved under layer		 Meijo Univ.　*Kenichiro Takeda,Fumiaki Mori,Yuji Ogiso,Toshiaki Mori,Toshiaki Asai,Kentaro Nagamatsu,Motoaki Iwaya,Satoshi Kamiyama,Hiroshi Amano,Isamu Akasaki
11 Fabrication of abrupt AlN/GaN Multi Quantum Wells by Low Temperature MOVPE The Univ. of Tokyo 1, RCAST The Univ. of Tokyo 2　*Yang Jungseung 1, Hassanet Sodabanlu 1,2, Sugiyama Masakazu 1, Nakano Yoshiaki 2, Shimogaki Yukihiro 1
15.4 III-V Nitride Epitaxial Growth
Sept. 3 9:00〜12:00
3a-CA-　/ I
1 JJAP Paper Award: Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes 1 University of California，2 Mitsubishi Chemical Corporation　Mathew C. Schmidt1, Kwang-Choong Kim1, Robert M. Farrell1, Daniel F. Feezell1, Daniel A. Cohen1, Makoto Saito1, Kenji Fujito2, James S. Speck1, Steven P. DenBaars1, and Shuji Nakamura1
2 JJAP Paper Award: Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes 1 ROHM Co. Ltd.， 2 University of Tsukuba 　Kuniyoshi Okamoto1, Hiroaki Ohta1, Shigefusa F.Chichibu2, Jun Ichihara1, and Hidemi Takasu1
3 Reduction of the Threshold Current of GaN Photonic Crystal Surface-Emitting Lasers Kyoto Univ.　Yoshimoto Susumu 1,Matsubara Hideki 1,Saito Hirohisa 1,Yue Jianglin 1,Tanaka Yoshinori 1,Noda Susumu 1
4 Room-Temperature Continuous-Wave Operation of Nonpolar m-Plane InGaN Blue-Green Laser Diodes Research and Development Headquarters, ROHM CO., LTD.　*Kuniyoshi Okamoto 1, Taketoshi Tanaka 1, Masashi Kubota 1
Break 10:30〜10:45
5 Random lasing in GaN nanocolumns Sophia Univ. 1, Sophia Nanotechnology Research Center 2, JST CREST 3　*Sakai Masaru 1,2,3, Kishino Katsumi 1,2,3, Kikuchi Akihiko 1,2,3, Sekiguchi Hiroto 1,2,3, Inose Yuta 1, Ema Kazuhiro 1,2,3, Ohtsuki Tomi 1,2,3
△ 6 NH3-source MBE of AlxGa1-xN films on free-standing m-plane GaN substrates IMRAM-Tohoku Univ. 1, MCC Optoelectronics Lab. 2, MCC STRC 3 　*Hoshi Takuya 1, Hazu Koji 1, Oshita Koji 1, Kagaya Munehito 1, Fujito Kenji 2, Namita Hideo 3, Onuma Takeyoshi 1, Chichibu F. Shigefusa 1
△ 7 Polarized and spatially-resolved cathodoluminescence studies of AlxGa1-xN films grown on m-plane free-standing GaN substrates IMRAM-Tohoku Univ. 1,MCC Optelectronics Lab. 2, MCC STRC 3　*Hazu Kouji 1,Hoshi Takuya 1,Ohshita Kouji 1,Kagaya Munehito 1,Fujito Kenji 2,Namita Hideo 3,Onuma Takeyoshi 1,Chichibu F. Shigefusa 1
8 Polarization properties of InGaN quantum wells on non c plane (Al)InGaN alloy substrates Kanazawa Inst. of Technology 1　*Yamaguchi A. Atsushi 1
9 Temperature dependence of Polarized luminescence from semipolar {11-22} InGaN/GaN quantum wells Kyoto Univ. 1,Nichia Corp. 2　*Ueda Masaya 1,Funato Mitsuru 1,Kawakami Yoichi 1,Narukawa Yukio 2,Mukai Takashi 2
15.4 III-V Nitride Epitaxial Growth
Sept. 3 9:30〜17:45
3a-CG-　/ I
1 Growth of 2 inch AlGaN single-crystalline layer by UHV sputtering method(III) Tokyo Denki Univ. 1　Tomohito Yanagisawa 1,Masahumi Hamano 1,Hiroyuki Shinoda 1,Nobuki Mutsukura 1
2 Growth of AlN single-crystalline layer by UHV sputtering method Tokyo Denki Univ.　*Hamano Masafumi 1,Yanagisawa Tomohito 1,Shinoda Hiroyuki 1,Mutsukura Nobuki 1
△ 3 Fabrication and characterization of GaN/InN heterostructures by pulsed laser deposition The Uni. of Tokyo 1, The Uni. of Tokyo 2, JST-CREST 3　*Tomoaki Fujii 1, Kazuma Shimomoto 1, Atsushi Kobayashi 2, Jitsuo Ohta 1, Masaharu Oshima 2,3 ,Hiroshi Fujioka 1
4 Characteristics of in-plane epitaxial relationships between nitrides and substrates The Univ. of Tokyo 1,2, Tottori Univ. 3　*Inoue Shigeru 1, Okamoto Koichiro 1, Kobayashi Atsushi 2, Ohta Jitsuo 1, Fujioka Hiroshi 1, Ishii Akira 3
5 Epitaxial growth of GaN films with HfN buffer layers on Si (110) substrates by pulsed sputtering deposition The University of Tokyo 1, Itochu Plastics Inc. 2　*Sou Akihira 1, Inoue Shigeru 1, Ohta Jitsuo 1, Fujioka Hiroshi 1, Isemura Masashi 2
6 Growth of GaN films on graphite sheets with HfN buffer layer IIS The University of Tokyo　*Irie Kyohei 1. Ohta Jitsuo 1. Inoue Shigeru 1. Kobayashi Atsushi 1. Fujioka Hiroshi 1.
Break 11:00〜11:15
7 PL Spectral Change by Photo Electro Chemical Etching of InGaN/GaN MQW Univ.Electro-Comm. 1,TN-EMC Ltd. 2　Tabata Shin 1, Usui Syogo 1, Kikawa Sadayuki 1, Kobayashi Naoki 1, Yamamoto Jun 2, Ban Yuzaburo 2, Matsumoto Kou
8 Comparision of Forward and Reverse Reactions of Hydrogen Generation in Electrolyte Between GaN,InGaN,Nanocrystalline TiO2 and Pt Electrodes Univ.,Electro-Communications Department of Applied Physics and Chemistry 1, Taiyou Nippon Sanso EMC.,LTD 2　*Usui shogo 1, Kikawa Sadayuki 1, Kobayashi Naoki 1, Yamamoto Jun 2, Ban Yuzaburou 2, Kou Matsumoto 2
9 Measurement of quantum efficiency in InGaN photocatalyst Tokyo Univ.of Science 1　K. Yamaguchi, T. Koyama, F. Sano, J. Niwa, A. Hirako, K. Ohkawa
10 Photoelectrochemical analysis of GaN with p-n junction in the surface depletion layer CIR Tohoku Univ. 1, Tokyo Univ. of Science 2　*Fujii Katsushi 1, Sato Keiichi 1, Ohkawa Kazuhiro 2, Yao Takafumi 1
11 Photocurrent Time Dependence of n-GaN during Photoelectrochemical Reaction in NaOH Aqueous Solution CIR Tohoku Univ. 1　*Sato Keiichi 1,Fujii Katsushi 1,Koike Kayo 1,Goto Takenari 1,Yao Takafumi 1
Lunch 12:30〜13:30
3p-CG-　/ I
△ 1 Growth of Mg doped M-plane (10-10) InN on LiAlO2 (100) Dept. of Photonics 1, Res. Org. of Sci. & Eng. 2, Ritsumeikan Univ.　*Yusuke Takagi 1, Daisuke Muto 1, Tomohiro Yamaguchi 2, Tsutomu Araki 1, Yasushi Nanishi 1
2 TEM characterization of M-plane (10-10) InN films Dept. of Photonics　Ritsumeikan Univ. 1,
Res. Org. of Sci. & Eng.Ritsumeikan Univ. 2　TEM characterization of M-plane (10-10) InN films
△ 3 Characterization of Ohmic Contact Resistance on InN by CTLM Method Dept. of Photonics 1, Res. Org. of Sci. & Eng. 2, R-GIRO 3, Ritsumeikan Univ. , NTT Photonics Labolatories 4 　*Shogo Kikuchi 1, Takeshi Sato 1, Akihiro Hinoki 1 , Tomohiro Yamaguchi 2, Narihiko Maeda 3,4, Tsutomu Araki 1, and Yasushi Nanishi 1
▲ 4 Growth of nonpolar a-plane AlN on r-plane sapphire by low-pressure HVPE Mie University, School of Engineering　* Wu Jiejun 1, Katagiri Yusuke 1, Okuura Kazuteru 1, Miyake Hideto 1, Hiramatsu Kazumasa 1
5 Structural and Electrical properties of Si-doped a-plane GaN grown on r-plane sapphire by MOVPE Mie Univ. 1.　*Ma Bei 1, Hu Weiguo 1, Miyagawa Reina 1, Li Dabing 1, Miyake Hideto 1 and HiramatsuMa Kazumasa 1
6 M-plane GaN growth on patterned a-plane sapphire substrate with SiO2 using side-wall epitaxial lateral overgrowth Grad.School of Sci　*Kawashima Yuji,Murakami Kazuma,Matsumoto Hiroyuki,Li Boche,Kouno Souichiro,Mitsui Yasutomo,Ishida Fumio, Okada Narihito,Tadatomo Kazuyuki
△ 7 Mg-doping of nonpolar a-plane GaInN Meijo Univ. 1　*Daisuke Iida 1, Motoaki Iwaya 1, Satoshi Kamiyama 1, Hiroshi Amano 1, Isamu Akasaki 1
8 Structural Characterization of semipolar AlGaN films grown on ZnO substrates The University of Tokyo 1, Mitsubishi Chemical Group Science and Technology Research Center 2　*Kohei Ueno 1, Atsushi Kobayashi 1, Jitsuo Ohta 1, Hiroshi Fujioka 1, Hidetaka Amanai 2, Satoshi Nagao 2, Hideyoshi Horie2
Break 15:30〜15:45
9 Epitaxial growth of high-quality m-plane InGaN films on ZnO substrates The Univ. of Tokyo 1,2, JST-CREST 3, Mitsubishi Chemical Group Science and Technology Research Center 4　*Shimomoto Kazuma 1, Ueno Kouhei 1, Kobayashi Atsushi 2, Ohta Jitsuo 1, Oshima Masaharu 2,3, Fujioka Hiroshi 1, Amanai Hidetaka 4, Nagao Satoru 4, Horie Hideyoshi 4
△ 10 Growth of nonpolar GaN on ZnO by pulse sputtering deposition The Univ. of Tokyo 1,2, JST-CREST 3, Mitsubishi Chemical Group Science and Technology Research Center 4　*Atsushi Kobayashi 1, Jitsuo Ohta 2, Hiroshi Fujioka 2, Masaharu Oshima 1,3, Hidetaka Amanai 4, Satoru Nagao 4, Hideyoshi Horie 4
11 Anisotropic in-plane strains in a-face Al1-xBxN (x<0.01) thin films grown on SiC (11-20) substrates NTT Basic Research Labs. 1　Akasaka Tetsuya 1, Kobayashi Yasuyuki 1, Kasu Makoto 1
12 High Rate Growth of GaN with Atmospheric Pressure MOVPE Taiyo Nippon Sanso 1, TN EMC 2, AIST 3　*Yano Yoshiki 1, Ubukata Akinori 1, Ikenaga Kazutada 1, Tabuchi Toshiya 1, Matsumoto Koh 2, Shimizu Mitsuaki 3
13 Selective area growth of thick GaN on Si(111) substrate The Furukawa Electric Co.,Ltd. 1　*Satoh Yoshihiro 1,Iwami Masayuki 1,Kato Sadahiro 1
14 Direct growth of GaN on 3C-SiC(111) templates by MOVPE for vertical devices Covalent Materials Corp.1, Tokyo Univ. of Agri.&Tech.2
　*J.Komiyama 1,2, Y.Abe 1, S.Suzuki 1, H.Nakanishi 1, A.Koukitu 2
15 Effects of native defects in heavily Si-doped GaN layers New Japan Radio Co.,Ltd　Masayuki Fukai,Tatsuhiko Adachi,Hiroshi Fushimi
16 Analysis of fractal dimension of dendrite-like GaN grown at room temperature The Univ. of Tokyo 1　*Yamazaki Shunsuke 1, Yatsui Takashi 1, Ohtsu Motoichi 1
15.4 III-V Nitride Epitaxial Growth
Sept. 4 9:30〜18:30
4a-CA-　/ I
1 Fabrication of low threading-dislocation density ELO-AlN template for application of UV-LEDs RIKEN 1, Saitama Univ. 2, Matsushita Electric Works 3, JST CREST 4　*Hirayama Hideki 1,2,4, Fujikawa Sachie 1,2,4, Norimatsu Jun 1,2,4, Takano Takayoshi 1,3, Tsubaki Kenji 1,3, Kamata Norihiko 2,4
2 Making to high quality of AlN-Template crystal layer Kogakuin Univ. 1　*Takeda Tomohito 1, Tsutagawa Yusuke 1, Anzai Hideaki 1, Kawanishi Hideo 1
3 Computational analysis of source loss pathways in AlGaN-MOVPE Tokyo Univ. of Science　*Ichinohe Fumitaka 1,Ichikawa Masaya 1,Nakamura Kenichi 1,Hirako Akira 1,Ohkawa Kazuhiro 1
4 In situ wafer curvature measurements of AlGaN grown by MOVPE Mie Univ 1　* Yuya Ogawahara 1,Mitsuhisa Narukawa 1, Hideto Miyake 1,Kazumasa Hiramatsu 1,
5 MOCVD growth and characterization of quaternary InAlGaN multiple quantum wells Nagoya Inst. of Tech.1　*Yusuke Sakai1,Tomoki Hirai1,Takashi Egawa1
▲△ 6 Deep-Ultraviolet Emission of AlGaN/AlN MQWs grown by Modified Migration Enhanced Epitaxy Kyoto Univ. 1　*Banal Ryan 1, Funato Mitsuru 1, Kawakami Yoichi 1
Break 11:00〜11:15
7 Crystal growth of cubic AlGaN on MgO(001) substrate by RF-MBE(II) The Univ. of Tokyo 1　Kakuda Masahiro 1, Katayama Ryuji 1,Onabe Kentaro 1
8 RF-MBE growth AlN template on vicinal sapphire for high quality InN Fukui Univ. 1　*Hiroyuki Hara 1, Hironori Hounoki 1, Akio Yamamoto 1, Akihiro hashimoto 1
9 Phase Separation of InAlN Thin Films Grown on Si Substrate by Ammonia MBE (2) Nippon Inst. of Technol. 1,Epitec, Inc. 2　Oishi Shota 1,*Iijima Kenta 1,Suzuki Toshimasa 1,2
10 Effect of high temperature annealing on AlN/SiC structure prepared by room temperature PSD Institute of Industrial Science, The Univ. of Tokyo 1　*Sato Kazuhiro 1, Ohta Jituo 1, Inoue Shigeru 1, Kobayashi Atsushi 1, Fujioka Hiroshi
11 Dependences of crystal quality and optical properties of sputtered AlN:Gd films on substrate and film thickness Kyoto Inst.Tech. 1,Osaka Univ. 2,Ritsumeikan Univ. 3　*Kiyama Yoshio 1,Sonoda Saki 1,Yoshimoto Masahiro 1,Emura Shuichi 2,Suzuki Akira 3
Lunch 12:30〜13:30
4p-CA-　/ I
1 Characterization of GaN thin films using Resonant Raman spectroscopy and PL Covalent Materials Corp. 1, NIMS 2　*Uchimaru Tomonori 1,Osada Minoru 2,Kanai Hideyuki 1,Komiyama Jun 1,Suzuki Shyunichi 1,Nakanishi Hideo 1
2 Photoexcited carrier dynamics in GaN using near-field heterodyne transient grating method Chuo Univ 1, dentsu Univ 2　Kenji Katayama 1, Yuji Ohashi 1, Qing Shen 2, Taro Toyoda 2
3 Fabrication of AlOx-coated GaN crystallites and their cathodoluminescence Kogakuin Univ.　*Takashi Okuhata, Masaru Sawada, Masashi Sawadaishi, Tohru Honda
4 Temperature dependence of near-field photoluminescence distribution in InGaN epitaxial layers Yamaguchi Univ. 1, Mitsubisi Cable Ind. 2　*Kato Nobuo 1, Kobayasi Eiji 1, Yamada Yoichi 1, Taguchi Tsunemasa 1, Kudo Hiromitsu 2, Okagawa Hiroaki 2
5 Optical properties of InGaN/GaN stripe structure grown on (111)Si Nagoya Univ. 1, Akasaki Research Center 2　Byeoung-jo Kim 1,2, Tomoyuki Tanikawa 1,2, Yoshio Honda 1,2, Masahito Yamaguchi 1,2, Nobuhiko Sawaki 1,2
▲ 6 Strain relaxation effect by nano texturing on InGaN/GaN quantum well grown by RF-MBE Sophia Univ.1, Sophia nanotechnology center 2, CREST JST 3.　Vadivelu Ramesh 1 2, Kikuchi Akihiko 1 2 3, Kishino Katsumi 1 2 3
7 Temperature Dependence of Photoluminescence Spectra in Mg-doped p-AlGaN Alloys Univ.Fukui 1,Meijo Univ.2　*Suzuki Masataka 1,Sawai Shun 1,Hukui Kazutoshi 1,Nagamatsu Kentaro 2,Amano Hiroshi 2
8 Correlation between localization energy and exciton linewidth in AlGaN epitaxial layers Yamaguchi Univ. 1　*Murotani Hideaki 1, Yamada Yoichi 1, Taguchi Tsunemasa 1
9 Excitation-power-density dependence of photoluminescence spectra in AlGaN-based quantum wells Yamaguchi Univ. 1　*Murotani Hideaki 1, Yamada Yoichi 1, Taguchi Tsunemasa 1
10 Band Structures and Polarization Properties of AlN Univ. Fukui 1, Meijo Univ. 2, RIKEN 3　*Kazutoshi Fukui 1, Tomoharu Ito 1, Masataka Suzuki 1, Masaaki Kishida 1, Kentarou Nagamatsu 2, Hiroshi Amano 2, Hideki Hirayama 3
Break 16:00〜16:15
11 Transmittance properties of boron nitride on sapphire substrates grown by MOVPE Shonan Institute of Technology 1, NTT BRL 2　*Miyamoto Mizuki 1, Kobayashi Yasuyuki 2, Akasaka Tetsuya 2, Matsumoto Nobuo 1, Kasu Makoto 2
▲ 12 Near band-gap luminescence of h-BN/Ni(111) grown by plasma-assisted MBE NTT BRL 1　*Tsai Chiun-Lung 1, Kobayashi Yasuyuki 1, Akasaka Tetsuya 1, Kasu Makoto 1
13 Characterization of InGaN MQW structures subsequently grown on LEG GaN using dimethylhydrazine Matsushita Electric Industrial 1　*Takizawa Toshiyuki 1, Usuda Manabu 1, Ueda Tetsuzo 1
14 Calculation of Raman Shift Wavenumbers of GaN using ab-initio Molecular Dynamics Calculations Wakayama Univ. 1, Matsuhita Electric Ind. 2　*Kazuyuki Uno 1, Takuki Inoue 1, Toshiyuki Takizawa 2, and Ichiro Tanaka 1
15 Simple Analysis Method of X-Ray Rocking Curves for Non-Symmetrical Reflections Kyushu Univ. 1　*Kuwano Noriyuki 1
16 Estimation of Reduction in Number of Threading Dislocations in Selected Area Grown GaN with a Stripe-Type Mask ASTEC Kyushu Univ. 1, ASEM Kyushu Univ. 2, Mie Univ. 3　Kuwano Noriyuki 1, Ezaki Tetsuya 2, Miyake Hideto 3, Hiramatsu Kazumasa 3
17 Structural characterization of AlGaN using SPM and Spectroscopic techniques Toray Research Center,Inc. 1　*Matsumura Kouji 1, Fujita Takaya 1, Mitani Takeshi 1, Yoshikawa Masanobu 1
18 InAlN/AlGaN/AlN/GaN heterostructures with flat surface and high electron mobility NTT Photonics Labs.　*Hiroki Masanobu 1, Maeda Narihiko 1, Kobayashi Takashi 1
19 Dependence of Insulator/AlGaN Structures on 2DEG Density in Insulator/AlGaN/GaN Heterostructures NTT Photonics Labs. 1　Maeda Narihiko 1, Hiroki Masanobu 1, Enoki Takatomo 1, Kobayashi Takashi 1
15.4 III-V Nitride Epitaxial Growth
Sept. 4 9:30〜18:15
4a-CG-　/ I
1 Improvement of interface quality in the QW structures
in 1ML InN/InGaN/GaN MQWs		 Chiba Univ 1,VBL 2　*Watanabe Hiroshi 1,Yuki Akihiko 1,Matsui Kazuaki 1,Otomura Hiroki 1,
Hashimoto Naoki 1,Che Song-bek 1 2,Ishitani Yoshihiro 1 2,Yoshikawa Akihiko 1 2
2 The dependence of structural and optical properties of 1 ML InN/GaN QWs on GaN barrier thickness Chiba Univ 1,VBL 2　*Otomura Hiroki 1,Matsui Kazuaki 1,Yuki Akihiko 1,Watanabe Hiroshi 1,Hashimoto Naoki 1,Che Sonbeku 1,2,Ishitani Yoshihiro 1,2,Yoshikawa Akihiko 1,2
3 Stimulated emission in very thin InN/GaN QWs Graduate School of Electrical and Electronic Engineering 1, VBL 2, Chiba University　*S.B.Che1 2, A.Hikida1, M.Sato1, Y.Ishitani1 2 , A.Yoshikawa1 2
4 Understanding of ultra-thin InN film growth mechanism by using in-situ observation of In and InN deposition/desorption process on GaN substrate
 Graduate School of Electrical and Electronic Engineering, Chiba Univ. 1, VBL, Chiba Univ. 2　*Hashimoto Naoki 1, Saito Hideyuki 1, Kazuaki Matsui 1, Yuki Akihiko 1, Hiroki Otomura 1, Hiroshi Watanabe 1, Che Song-Bek 1,2, Ishitani Yoshihiro 1,2, Yoshikawa Akihiko 1,2
5 Temperature dependence of the PL peak energy of In-rich InAlN nanocolumns Sophia Univ. 1, SNRC 2, CREST 3　*Kamimura Jumpei 1,2 Kishino Katsumi 1,2,3 Kikuchi Akihiko 1,2,3
Break 10:45〜11:00
6 Polarity dependence of InN{0001} decomposition in N2 and H2 ambient Tokyo Univ. of Agri. & Tech. 1　*Togashi Rie 1, Kamoshita Tomoki 1, Adachi Hirokazu 1, Murakami Hisashi 1, Kumagai Yoshinao 1, Koukitu Akinori 1
▲△ 7 MOVPE growth of indium-rich AlInN with AlN buffer Graduate School of Eng., University of Fukui 　Kang Ting-Ting 1, Hashimoto Akihiro 1,Yamamoto Akio 1
8 A porous layer near the interface of MOVPE InN at 650℃ Fukui Univ. 1　Kenichi Sugita 1, Akihoro Hashimoto 1, Akio Yamamoto 1
9 Effect of oxygen supply for MOVPE InN growth Fukui Univ.　Kenichi Sugita 1, Akihiro Hashimoto 1, Akio Yamamoto 1
△ 10 MOVPE growth of InN using dimethylhydrazine as the nitrogen source (2) Dept. of Advanced Materials Science, The University of Tokyo　Thieu Quang Tu, Seki Yuki, Kuboya Shigeyuki, Katayama Ryuji, Onabe Kentaro
11 MOVPE Growth of InN: A Comparison between a Horizontal and a Vertical Reactor IMR, Tohoku Univ. 1, NICT 2, JST-CREST 3　*Yuhuai Liu 1, 3, Takeshi Kimura 1,3, Taka-aki Shimada 1,Masaki Hirata 1, Masashi Nakao 2,3, Shi-Yang Ji 1, Takashi Matsuoka 1,3
Lunch 12:30〜13:30
4p-CG-　/ I
△ 1 Growth and characterization of GaN/InN heterostructures Dept. of Photonics, Ritsumeikan Univ. 1, Res. Org. of Sci. & Eng., Ritsumeikan Univ. 2　Daisuke Muto 1, Tomohiro Yamaguchi 2, Tsutomu Araki 1, Yasushi Nanishi 1
△ 2 Control of effective V/III ratio during the growth of InN on GaN templates using in-situ RHEED monitoring Res. Org. of Sci. & Eng. 1, Dept. of Photonics 2, R-GIRO 3, Ritsumeikan University, NTT Photonics Lab. 4　*Tomohiro Yamaguchi 1, Hirokazu Nozawa 2, Daisuke Muto 2, Tsutomu Araki 2, Narihiko Maeda 3, 4 and Yasushi Nanishi 2
3 Direct growth of InN on 4H-SiC(0001) substrates by RF-MBE Saitama Univ.,　*Orihara Misao ,Tomita Yasuhiro ,Takizawa Sin ,Satou Takanori ,Hijikkata Yasuto ,Yaguchi Hiroyuki ,Yoshida Sadafumi
4 Anisotropic damping of hole plasmon in p-InN films by infrared epllipsometry Graduate School of Electronics and Electrical Engineering Chiba Univ.　1, Venture Business Laboratory, Chiba Univ.　2　○M.Fujiwara1　, Y.Ishitani　1,2, X.Wang　1, S.B.Che　1,2, A.Yoshikawa　1,2
5 Growth and characterization of Mg-doped In-polarity high In-content InGaN by RF-MBE Chiba Univ 1,VBL 2　*Umiguchi Shohei 1,Otsuki Masaru 1,Che Song-Bek 1 2,Isitani Yosihiro 1 2,Yosikawa Akihiko 1 2
6 Study of point defects in Mg-doped InN by means of positron annihilation Univ. of Tsukuba 1,JST CREST 2,Chiba Univ. 3,AIST 4　*Suzuki Junya 1, Nakamori Hiroto 1, Narita Kouki 1, Uedono Akira 1, Wang Xinqiang 2 , Che Song-Bek 2,3, Ishitani Yoshihiro 2,3, Yoshikawa Akihiko 2,3, Ishibashi Shoji 4
▲ 7 Effects of Mg Doping on MOVPE InxGa1-xN Properties Fukui Univ. 1　Md Rafiqul Islam 1, Kenichi Sugita 1, Akihiro Hashimoto 1, Akio Yamamoto 1
8 Schottky barrier of InN films; Interface orientation dependence Graduate School of Science, Chiba Univ.　Yuki Takei 1, Takashi Nakayama 1
9 Phonon polariton of InN Dept. Electronics, Tokai Univ. 1, Dept. Elect. & Electronics Eng. Univ. Fukui 2　*Inushima Takashi 1, Ota Yuuichi 1, Yanagawa Tohru2, Fukui Kazutoshi 2
Break 15:45〜16:00
10 Low-pressure HVPE growth of thick AlN on patterned sapphire substrate Mie Univ. 1　Katagiri Yusuke 1, Okuura Kazuteru 1, Wu Jiejun 1, Miyake Hideto 1, Hiramatsu Kazumasa 1
11 Preparation of a freestanding AlN substrate using (0001) sapphire as a starting substrate Tokyo Univ. of Agri. & Tech. 1,Tokuyama Corp. 2　*Yuki Kubota 1,Jumpei Tajima 1,Masanari Ishiduki 1,2,Toru Nagashima 2,Rie Togashi 1,Hisasi Murakami 1,Kazuya Takada 2,Akinori Koukitu 1
△ 12 Preparation of a crack-free AlN template on sapphire substrate by hydride vapor phase epitaxy Tokyo Univ. of Agri. & Tech. 1,Tokuyama Corp. 2　*Jumpei Tajima 1,Yuki Kubota 1,Hisashi Murakami 1,Yoshinao Kumagai 1,Kazuya Takada 2,Akinori Koukitu 1
13 Theoretical investigation on the decomposition process of GaN(0001) surface under a hydrogen atmosphere Tokyo Univ. of Agri. & Tech.　*Hikari Suzuki 1, Rie Togashi 1, Hisashi Murakami 1, Yoshinao Kumagai 1, Akinori Koukitu 1
14 In situ monitoring of the surface reaction rate in SiC (0001) Si face - H2 system Tokyo Univ. of Agri. & Tech. 1, Kyoto Univ. 2　Ishii Yasuhiro 1, Akiyama Kazuhiro 1, Murakami Hisashi 1, Kumagai Yoshinao 1, Okumura Hironori 2, Suda Jun 2, Kimoto Tsunenobu 2, Koukitu Akinori 1
15 Systematic theoretical investigation for adsorption behavior of Al and N atoms on 4H-SiC(11-20) surfaces Mie Univ 1　*Takumi Ito 1, Toru Akiyama 1, Kohji Nakamura 1, Tomonori Ito 1
16 Theoretical investigation on structural stability of AlN thin films on Si(001) Mie Univ.　*Daisuke anmi 1, Toru Akiyama 1, Kohji Nakamura 1, Tomonori Ito 1
△ 17 Vapor phase diffusion model analysis on InGaN grown by selective area metal-organic vapor phase epitaxy RCAST The Univ. of Tokyo 1, School of Eng. The Univ. of Tokyo 2　*Tomonari Shioda 1,2, Masakazu Sugiyama2, Yukihiro Shimogaki2, Yoshiaki Nakano1,2
18 Origin of the shift in luminescence wavelength from InGaN quantum wells in selective-area MOVPE School of Eng. the University of Tokyo 1,RCAST 2　Yuki Tomita 1, Tomonari Shioda 1,2, Masakazu Sugiyama 1, Yukihiro Shimogaki 1, Yoshiaki Nakano 1,2
15.4 III-V Nitride Epitaxial Growth
Sept. 5 9:00〜15:00
5a-CA-　/ I
1 The parallelogram cross-section shaped LED fabricated on a-plane sapphire substrate with high light extraction efficiency. Grad. School of Sci. and Eng., Yamaguchi Univ. 1　*Fujita Daisuke 1,Murata Tohru 1,Kohno Souichirou 1,Ishida Fumio 1,Mitsui Yasutomo 1,Okada Narihito 1,Tadatomo Kazuyuki 1
2 Performance of the LED on GaN (10-1-1) template Meijo Univ.　*Matsubara Tetsuya 1, Kawai Ryosuke 1, Senda Ryota 1, Iida Daisuke 1, Iwaya Motoaki 1, Kamiyama Satoshi 1,Amano Hiroshi 1, Akasaki Isamu 1,
3 Development of RGBCYM cluster White LED light source consisting of InGaN n-UV LED and multi color phosphors Grad. School of Sci. & Eng., Yamaguchi Univ. 　*Yuji.Uchida, Haruki.Ishikawa, Kentarou.Sugi, Satosi.Kurai, Tunemasa.Taguchi
△ 4 A new medical application of InGaN-based n-UV white LEDs (I): observation on the cancer using the RGBCYM cluster light source. Grad. School of Sci. & Eng., Yamaguchi Univ. 1, Grad. School of Medicine, Yamaguchi Univ. 2　*Kentaro Sugi 1, Haruki Ishikawa 1, Yuji Uchida 1, Satoshi Kurai 1, Tsunemasa Taguchi 1, Shu Kiyotoki 2, Jun Nishikawa 2, Isao Sakaida 2
5 A new medical application of InGaN-based n-UV white LEDs (II) : high performance in LED endoscope Grad. School of Sci. & Eng. Yamaguchi Univ. 1, Grad. School of Medicine, Yamaguchi Univ. 2　*Haruki Ishikawa 1, Kentaro Sugi 1, Yuji Uchida 1, Satoshi Kurai 1, Tsunemasa Taguch 1, Shu Kiyotoki 2, Jun Nishikawa 2, Isao Sakaida 2
6 Analysis of current distribution of LED on GaN substrate and removed epitaxial layer Meijo Univ. 1　*Hayakawa Takemasa 1,Senda Ryota 1,Iwaya Motoaki 1,Kamiyama Satoshi 1,Amano Hiroshi 1,Akasaki Isamu 1
Break 10:30〜10:45
7 Process of transcribing InGaN/GaN quantum disk nanocolumn LEDs on n-(111) Si substrates in thick Au films Sophia Univ. 1,SNRC 2,CREST JST 3　*Koki Sakamoto 1,Hiroto Sekiguchi 1,2,3,Kei Kato 1,Akihiko Kikuchi 1,2,3,Katsumi Kishino 1,2,3
8 Transfer of Homoepitaxial GaN films from GaN substrates onto Si Substrates Sanyo Electric Co., Ltd. Advanced Devices Research Center　Kunoh Yasumitsu 1, Takeuchi Kunio 1, Inoshita Kyoji 1, Ohbo Hiroki 1, Nakashima Saburo 1, Goto Takenori 1, Kunisato Tatsuya 1
△ 9 Investigation of APC alloy for high-reflectivity contact of blue LED Meijo Univ. 1,EL-SEED Corp. 2　*Kawai Ryosuke 1,Mori Toshiaki 1,Ochiai Wataru 1,Suzuki Atushi 2,Iwaya Motoaki 1,Amano Hiroshi 1,Kamiyama Satoshi 1 2,Akasaki Isamu 1
△ 10 Control of emission-color of well-arranged GaN nanocolumns on the same wafer by changing the nanocolumn size and period Sophia Univ. 1, SNRC 2, CREST 3　*Hiroto Sekiguchi 1,2,3, Katsumi Kishino 1,2,3, Akihiko Kikuchi 1,2,3
11 Fabrication of AlGaN based MOS-LED operating in UV sectral regions grown by RF-MBE Kogakuin Univ. 1　*Suzuki Shota 1,Komiyama Shigetoshi 1,Okuhata Takashi 1,Noguchi Kazuyuki 1,Honda Tohru 1
Lunch 12:00〜13:00
5p-CA-　/ I
1 Large-area laser-lift off technique for AlGaN-based epi-wafers. RIKEN 1, Ritsumeikan Univ. 2, Tokyo Tech. 3　*Takeuchi Misaichi 1,2, Maegawa Tomohiro 3, Ooishi Shin 3, Ohtsuka Takumi 3, Aoyagi Yoshinobu 2
2 Problems on growth of p-GaN contact layers for AlGaN-based deep UV LEDs RIKEN 1, Ritsumeikan Univ. 2, Tokyo Tech. 3　*Takeuchi Misaichi 1,2, Ooishi Shin 3, Ohtsuka Takumi 3, Maegawa Tomohiro 3, Aoyagi Yoshinobu 2
△ 3 Over 10 mW operation of 280 nm-band deep-UV LEDs with InAlGaN-QWs introduced Si modulation doping RIKEN 1, Matsushita Electric Works 2, JST CREST 3　*Sachie Fujikawa 1, Hideki Hirayama 1,3, Takayoshi Takano 1, 2, Kenji Tsubaki 1, 2
4 Milliwatt power 270 nm-band AlGaN deep-UV LEDs fabricated on ELO-AlN template RIKEN 1, Saitsama Univ. 2, Matsushita Electric Works, Ltd 3, JST-CREST 4　*Norimatsu Jun 1,2,4, Hirayama Hideki 1,2,4, Noguchi Norimichi 1,2,4, Fujikawa Sachie 1,2,4, Takano Takayoshi 3, Tsubaki Kenji 3, Kamata Norihiko 2,4
5 CW 11mW output power operation of 264nm deep-UV AlGaN quantum well LED RIKEN 1, Saitama Univ. 2, JST CREST 3　*Hirayama Hideki 1,2,3, Noguchi Norimichi 1,2,3, Norimatsu Jun 1,2,3, Kamata Norihiko 2,3
6 230nm-band CW Single-peaked operation of Deep-UV AlGaN MQW LED with AlN electron blocking layer RIKEN 1, Saitama Univ 2, JST CREST 3　Norimichi Noguchi 1 2, Hideki Hirayama 1 3, Jun Norimatsu 1 2, Norihiko Kamata 2 3
7 Increase in the emission intensity of AlN deep-UV light-emitting diode by using interdigitated mesa structure NTT Basic Research Laboratories 1　*Taniyasu Yoshitaka 1, Kasu Makoto 1
8 Characterization of UV-LD on MOVPE-grown AlN/Sapphire at HT using ELO Meijo Univ. 1, Hamamatsu Photonics K.K. 2　*Hirotoshi Tsuzuki 1, Fumiaki Mori 1, Kenichiro Takeda 1, Motoaki Iwaya 1, Satoshi Kamiyama 1, Hiroshi Amano 1, Isamu Akasaki 1, Harumasa Yoshida 2, Masakazu Kuwabara 2, Yoji Yamashita 2 and Hirofumi Kan 2
15.4 III-V Nitride Epitaxial Growth
Sept. 5 9:00〜14:45
5a-CG-　/ I
1 Growth of GaN nanocolumn on n-(111) Si substrates with Aluminum Nitride buffer layer by rf-plasma assisted molecular beam epitaxy Sophia Univ. 1,SNRC 2,CREST 3,　*Kazuya Nagashima 1,Katsumi Kishino 1,2,3,Hiroto Sekiguchi 1,2,3,Kei Kato 1, Tetsuya Kouno 1,2,3,Akihiko Kikuchi 1,2,3
2 Selective growth of AlN/GaN DBR nanocolumn on GaN continuous film Sophia Univ. 1, SNRC 2, CREST JST 3　*Shuichi Sugimoto 1, Shunsuke Ishizawa 1,2,3, Hiroto Sekiguchi 1,2,3, Akihiko Kikuchi 1,2,3, Katsumi Kishino 1,2,3
3 Selective growth of GaN nanocolumns with AlN patterns on GaN continuous film by RF-MBE Sophia Univ. 1, SNRC 2, CREST JST 3　*Yuuichiro Tanabe 1, Shunsuke Ishizawa 1,2,3, Katsumi Kishino 1,2,3, Akihiko Kikuchi 1,2,3
4 Selective growth of GaN nanocolumns with AlN patterns on Si substrate by RF-MBE Sophia Univ. 1,SNRC 2, CREST, JST 3　*Ishizawa Shunsuke 1,2,3,Yamano Kouji 1,2,3,Kikuchi Akihiko 1,2,3, Kishino Katsumi 1,2,3
5 Nitrogen flow rate dependency of selectivity of GaN nanocolumn by use of Ti-mask selective area growth of rf-MBE Sophia Univ. 1,SNRC 2,CREST 3　*Moe Kinoshita 1,Hiroto Sekiguchi 1,2,3,Akihiko Kikuchi 1,2,3,Katsumi Kishino 1,2,3
6 Effect of growth condition on well-arranged InGaN/GaN nanocolumns grown by selective area growth of rf-MBE Sophia Univ. 1, SNRC 2, CREST JST 3　*Hiroto Sekiguchi 1, Katsumi Kishino 2, Akihiko Kikuchi 3
Break 10:30〜10:45
7 Investigation of GaN overgrowth layer grown on Beryllium doped nanocolumns on n-(111) silicon substrates Sophia Univ. 1,SNRC 2,CREST JST3　*Kei Kato 1,Hiroto Sekiguchi 1,2,3,Akihiko Kikuchi 1,2,3,Katsumi Kishino 1,2,3
8 Optical characteristic of well-arranged InGaN/GaN quantum disks nanocolumns Sophia Univ. 1,Sophia NanoTech RC 2,CREST JST 3　*Jo Tanaka 1,Hiroto Sekiguchi 1,2,3,Akihiko Kikuchi 1,2,3,Katsumi Kishino 1,2,3
9 Growth temperature dependence of the shape of GaN nanorods Osaka Univ. ISIR 1　*Tambo Hiroyuki 1, Seo Jong-Uk 1, Kameoka Hisashi 1, Emura Shuichi 1, Hasegawa Shigehiko 1, Asahi hajime 1
10 Growth and characterization of Gd-doped GaN nanorods Osaka Univ. ISIR 1　Kameoka Hisashi 1, Tanbo Hiroyuki 1, Emura Shuichi 1,*Hasegawa Shigehiko 1, Asahi Hajime 1
11 Growth and field emission characteristics of GaN nanorods on patterned SOI substrates Osaka Univ. ISIR　1　*Seo JongUk 1, Hasegawa Shigehiko 1, Asahi Hajime 1
Lunch 12:00〜13:00
5p-CG-　/ I
1 Selective Area Growth of GaN Nanocolumns using Ti-Mask by rf-Molecular Beam Epitaxy Sophia Univ. 1,SNRC 2,CREST 3　*Hoshino Takayuki 1,Kikuchi Akihiko 1,2,3,Kishino Katsumi 1,2,3
2 Selective area growth of GaN ring-structures by RF-plasma assisted molecular beam epitaxy Sophia Univ.,SNRC,CREST JST　*Kouno Tetsuya 1 2 3,Kishino Katsumi 1 2 3,Sekiguchi Hiroto 1 2 3,Kikuchi Akihiko 1 2 3
3 Fabrication of surface-coated Al substrates with AlN for GaN growth by MBE Kogakuin Univ.　*S. Taguchi, M. Sawadaishi, K. Sasaya, H. Yamamoto and T. Honda
4 Reduction of GaN dislocation density by nano-ELO
- Spatio-temporal control of GaN nucleation on SiON ulta-thin layers - 		Kyushu Univ. 1　*Yoshihito Hagihara 1. Satoru Tanaka 1
5 Fabrication of lattice-polarity-inverted GaN by wet process Univ. of Tokyo 1　*Fukuhara Yujiro 1, Katayama Ryuji 1, Onabe Kentaro 1
6 MBE Growth of GaN using Ammonia Cluster Ion Beam - dependdence on Cluster Energy - Okayama Univ. of Science 1,Hokkaido Inst. of Technology　*Saito Hiroshi 1,Ohishi Masakazu 1,Imai Kazuaki 2
7 Effect of impurity doping on the crystal quality of GaN grown by RF-MBE Waseda Univ 1　Yoshida Naoto 1,Suzuki Ryotarou 1,Kawaharazuka Atsushi 1,Horikosi Yoshiji 1
15.5 Group-IV Crystals and IV-IV Alloys
Sept. 3 13:30〜18:00
3p-CE-　/ I
1 Atomic-scale analysis of Si(100)/Si(110) direct bonding interfaces using Molecular-dynamics simulations Kyushu Univ 1　*Matsuoka Kazuya 1,Ogata Tomohiko 1,Munetoh Shinji 1,Motooka Teruaki 1
2 Microstructures in directly bonded Si substrates Grad.Sch.Eng.Sci., Osaka Univ. 1, Grad.Sch.Eng., Nagoya Univ. 2, Covalent Materials Co., Ltd. 3, JASRI/SPring-8 4, UHVEM Osaka Univ. 5　Ohara Yuji 1, Ueda Takaya 1, Sakai Akira 1, Nakatsuka Osamu 2,Zaima Shigeaki 2, Toyoda Eiji 3, Izunome Koji 3, Kimura Shigeru 4, Sakata Takao 5, Mori Hirotarou 5
3 Characterization and analyses of interface structures in directly bonded Si(011) / Si(001) substrates
 Covalent Materials Co., Ltd. 1, Grad. Sch. Eng., Nagoya Univ. 2, Grad. Sch. Eng. Sci., Osaka Univ. 3, Rigaku Corp. 4, JASRI/SPring-8 5　Toyoda Eiji 1.2, Sakai Akira 3, Nakatsuka Osamu 2, Zaima Shigeaki 2, Isogai Hiromichi 1, Takeshi Senda 1, Omote Kazuhiko 4, Imai Yasuhiko 5, Kimura Shigeru 5
△ 4 Characterization of Strain Relaxation Process during Ge Condensation by Synchrotoron Microbeam X-ray Diffraction Osaka Univ. 1, JASRI 2　*Tomoyuki Inoue 1, Daisuke Shimokawa 1, Takuji Hosoi 1, Takayoshi Shimura 1, Heiji Watanabe 1, Yasuhiko Imai 2, Osami Sakata 2, Shigeru Kimura 2
5 Effect of Atomic Hydrogen Irradiation on Initial Growth of Sn and Ge1-xSnx on Ge(001) Substrates Graduate School of Eng., Nagoya Univ. 1　Tatsuya Shinoda 1, Masahiro Yamazaki 1, *Osamu Nakatsuka 1, Shigeaki Zaima 1
△ 6 Control of Sn content and strain structure of Ge1-xSnx buffer layers for fabrication of tensile-strained Ge Guraduate School of Eng., Nagoya Univ. 1,Guraduate School of Eng. Sci., Osaka Univ. 2　*Shimura Yosuke 1,Tsutsui Norimasa 1,Nakatsuka Osamu 1,Sakai Akira 2,Zaima Shigeaki 1
7 Investigation of the crystallinity and surface roughness of 2-layered SiGe thin films prepared by ion-beam sputtering technique Kanazawa Univ., Graduate School of Natural Sci. & Tech. 1　Akinari. Matoba 1, Minoru. Kumeda 1, Kimihiro. Sasaki 1
8 Transport Phenomena in a MOCVD SiGe Epitaxial Reactor Yokohama National Univ. 1, Riken 2　Hamazaki Hiroto 1, Nagino Shoichiro 1, *Habuka Hitoshi 1, Imai Masato 2
▲ 9 Influence of top surface passivation on bottom-channel hole mobility of ultrathin SiGe- and Ge-on-insulator KASTEC 1, Interdisciplinary Graduate School of Eng. Sci., Kyushu Univ. 2　*Yang Haigui 1, Wang Dong 1, Nakashima Hiroshi 1, Gao Hongye 2, Hirayama Kana 2, Ikeda Ken-ichi 2, Hata Satoshi 2, Nakashima Hideharu 2
Break 15:45〜16:00
10 Real-time stress and RHEED measurements during Bi-mediated Ge growth JAEA 1,Eiko 2,Tohoku Univ. 3,Tomsk State Univ. 4　*Hidehito Asaoka 1,Tatsuya Yamazaki 1,2,Shin-ichi Shamoto 1,Sergey Filimonov 3,4,Miki Suemitu 3
11 Ge, SiC nanodots capped by SiC layer and their optical properties Nagaoka Univ. of Tech.　*Suto Haruki 1, Kuroda Tomoyoshi 1, Kato Ariyuki 1, Nishiyama Hiroshi 1, Akahane Tadashi 1, Takata Masasuke 1, Yasui Kanji 1
12 Strain relaxation process of SiGe layers fabricated by Si ion implantation method Advanced Research Labo. Musashi Inst. of Technology 1, Tohoku Univ. 2, Univ. of Yamanashi 3　Hoshi Yusuke 1, Sawano Kentarou 1, Hiraoka Yoshiyasu 1, Yamada Atsunori 1, Usami Noritaka 2, Nakagawa Kiyokazu 3, Shiraki Yasuhiro 1
13 Strain Analysis of strained-Si /SiGe structures grown on Si(110) substrates CCST Univ. of Yamanashi 1, IMR Tohoku University 2, ARL Musashi Inst. of Technology 3　*Keisuke Arimoto 1, Toshihiko Yajima 1, Kiyokazu Nakagawa 1, Noritaka Usami 2, Kazuo Nakajima 2, Kentarou Sawano 3, Yasuhiro Shiraki 3
14 Observation of uniaxial strain in SiGe layers fabrication by selective ion-implantation method Advanced Research Labo. Musashi Institute of Technology 1,
Tohoku University 2, University of Yamanashi 3　*Yamada Atsunori 1, Sawano Kentarou 1, Hoshi Yuusuke 1, Hiraoka Yoshiyasu 1,
Usami Noritaka 2, Nakagawa Kiyokazu 3, Shiraki Yasuhiro 1
15 Strain Characterization of Strained SiGe-Fin Structures formed by H2 Thermal Etching and Ge-Condensation Processes MIRAI-ASET 1, Covalent Materials Corp. 2, MIRAI-AIST 3, The Univ. of Tokyo 4　○Tsutomu Tezuka 1, Eiji Toyoda 2, Toshifumi Irisawa 1, Koji Usuda 1, Norio Hirashita 1, Yoshihiko Moriyama 1, Naoharu Sugiyama 1, Shin-ichi Takagi 3,4
16 Estimation of transport properties of 2 dimensional electron gas in strained Si/SiGe heterostructures Keio Univ. 1,Advanced Research Laboratories, Musashi Inst. of Technology 2　*Tsuchiya Go 1,Sawano Kentaro 2,Shiraki Yasuhiro 2,Itoh Kohei 1
17 Fabrication and evaluation of strained Si MOS capacitor Keio Univ. 1　*Mitsuhiro Inagaki 1, Satoru Matsumoto 1
15.6 Group-IV Compounds
Sept. 2 9:30〜18:00
2a-CE-　/ I
1 SiC crystal defect conversion by MSE method EcoTron　*Shinkichi Hamada 1, Hiroshi Kawami 1, Nobuhiko Nakamura 1, Toru Matsunami 1, Kimito Nishikawa1
2 Growth process analysis and defects evaluation of SiC by three-dimensional space-resolved Raman spectroscopy Kwansei Gakuin Univ. 1　*Kitada Tomomi 1, Tamai Naoto 1, Matsuda Kazuhiro 1, Kaneko Tadaaki 1, Ohtani Noboru 1
3 Epitaxial growth on 4H-SiC Si-face vicinal off angled substrate ESERL, AIST 1　*K. Kojima1, J. Senzaki1, H. Okumura1
4 Polycrystalline SiC Film Deposition Using SiH3CH3 and HCl Gases at Low Temperatures Yokohama National Univ　* Ohmori Hiroshi 1, Watanabe Mayuka 1,Habuka Hitoshi 1
5 Polytype transformation during solution growth on 3C-SiC seed crystals Nagoya Univ.　*Seki Kazuaki 1, Tanaka Ryo 1, Ujihara Toru 1, Tokunaga Tomoharu 1, Sasaki Katsuhiro 1, Kuroda Kotaro 1, Takeda Yoshikazu 1
△ 6 Polytype transformation during solution growth on free-standing (001) 3C-SiC epilayers Nagoya Univ. 1　Tanaka Ryo 1, Seki Kazuaki 1, Ujihara Toru 1, Sasaki Katsuhiro 1, Kuroda Kohtaro 1, Takeda Yoshikazu 1
Break 11:00〜11:15
7 Spectroscopic Measurement of Electric Discharge Machining for SiC Chubu Univ. 1, TECH H.M. 2, AIST 3　*Sugimoto Tatsunori 1, Noro Toshiya 1, Yamada Hideki 1, Yamaguchi Satarou 1, Majima Hideyoshi 2, Kato Tomohisa 3
△ 8 Avalanche and Photo conduction effect of Diamond for Electric Discharge Machining Chubu Univ. 1,AIST 2　*Noro Toshiya 1,Yamada Hideki 1,Sugimoto Tatsunori 1,Yamaguchi Satorou 1,Kato Tomohisa 2
△ 9 Dicing of SiC substrates by PCVM (Plasma Chemical Vaporization Machining) Osaka Univ.1　*Takehiro Kato 1,Yasuhisa Sano 1,Kouhei Aida 1,Kazuya Yamamura 1,Hidekazu Mimura 1,Satoshi Matsuyama 1,Kazuto Yamauchi 1
10 Influence on the epitaxial film by different pre-processing Fujimi Incorporated 1,Nagoya Institute of Technology 2,Japan Atomic Energy Agency 3　*Kazutoshi Hotta 1,Toru Kamada 1,Kenji Kawata 1,Osamu Eryu 2,Takeshi Ohshima 3
11 Wafer machining study for SiC electric device processing AIST/ESERL 1　*Tomohisa Kato 1, Akimasa Kinoshita 1, Keisuke Wada 1, Takashi Nishi 1, Eiji Hozomi 1, Hiroyoshi Taniguchi 1, Kenji Fukuda 1, Hajime Okumura 1
Lunch 12:30〜13:30
2p-CE-　/ I
1 Optical characterization of nitrogen and aluminum doped 6H-SiC Meijo Univ.1,EL-SEED Corp.2　*Miyoshi Kohei 1,Kamiyama Satoshi 1,2,Amano Hiroshi 1,Iwaya Motoaki 1,
Akasaki Isamu 1
2 Evaluation of Midgap Levels in N-doped 6H-SiC Single Crystals Dept. of MSE, Natl. Def. Acad. 　Yurie Toyoda , Yasuhiro Watanabe , Seizi Nozawa , Hisashi Miyazaki , Youichi Okamoto , Jun Morimoto
△ 3 Characterization of Deep Levels in Ion-implanted 4H-SiC Kyoto Univ.　*Kotaro Kawahara, Giovanni Alfieri, Tsunenobu Kimoto
4 EPR and theoretical identification of di-carbon antisite defects in 4H-SiC Univ. of Tsukuba 1, JAEA Takasaki 2, Budapest Univ. of Tech.&Eco. 3　*T. Umeda 1, J. Isoya 1, N. Morishita 2, T. Ohshima 2, H. Itoh 2, A. Gali 3
△ 5 Characterization of excess carrier decay curves of epitaxial p-type 4H-SiC layers with various defect concentrations Nagoya Inst. of Tech. 1,NAIST 2,JAEA 3　*Matsushita Yoshinori 1,Kato Masashi 1,Ichimura Masaya 1,Hatayama Tomoaki 2,Ohshima Takeshi 3
6 Verification of Reduction in Acceptor density due to Displacement of C in Al-doped 4H-SiC by Electron Irradiation Osaka Electro-Communication Univ. 1,JAERI. 2　Nishino Kouzou 1, Minohara Nobumasa 1, Matsuura Hideharu 1, Ohshima Takeshi 2
7 Changes of Acceptor Density in Al-doped 6H-SiC epilayer by 200 keV Electron Irradiation OECU 1,JAEA 2　Yanagisawa Hideki 1,Izawa Keisuke 1,Matsuura Hideharu 1,Ohshima Takeshi 2
8 In situ gravimetric monitoring of decomposition rates on 6H-SiC (0001) Si surface. Tokyo Univ. of Agri. & Tech. 1,Kyoto Univ. 2　*Akiyama Kazuhiro 1,Ishii Yasuhiro 1,Murakami Hisashi 1,Kumagai Yoshinao 1,Okumura Hironori 2,Suda Jun 2,Kimoto Tsunenobu 2, Koukitu Akinori 1
9 4H-SiC Surface after Etched Using ClF3 Gas at High Temperatures Yokohama Nat. Univ. 1, Kanto Denka Kogyo 1, AIST 3　* Tanaka Keiko 1, Katsumi Yuusuke 1, Habuka Hitoshi 1, Takechi Naoya 2, Fukae Katsuya 2, Kato Tomohisa
Break 15:45〜16:00
10 Detailed Analysis and Precise Modeling of Multiple-Energy Al Implantations through SiO2 Layers into 4H-SiC Central Res. Lab, Hitachi, Ltd. 1,Hitachi ULSI Systems, Co., Ltd. 2　*Mochizuki Kazuhiro 1,Someya Tomoyuki 1,Takahama Takashi 2,Onose Hidekatsu 1,Yokoyama Natsuki 1
11 Electrical Properties of SiC depend on Polishing method Nagoya Inst. of Technology 1, Fujimi Incoporated 2　*Tanaka Yayoi 1,Hotta Kazutoshi 2,Kamada Toru 2,Kawada Kenji 2,Eryu Osamu 1
12 Characterization of SiC/Oxide Interfaces by Multi-angle Spectroscopic Elipsometry (II) Saitama Univ. 1　*Wakabayashi Takahiro 1,Seki Hideyasu 1,Hijikata Yasuto 1 ,Yaguchi Hiroyuki 1,Yoshida Sadafumi 1
△ 13 Defect passivation of SiO2/SiC interfaces by forming gas annealing and its depassivation mechanisms Osaka Univ 1,Rohm 2　*Watanabe Yuu 1,Harada Makoto 1,Kagei Yuusuke 1,Kirino Takashi 1,Mitani Syuuhei 2,Nakano Yuuki 2,Nakamura Takashi 2,Hosoi Takuji 1,Shimura Takayoshi 1, Watanabe Heiji 1
△ 14 Improved properties of SiC-MOS interfaces by thermal oxidation of plasma nitrided SiC surfaces Osaka Univ. 1　*Kagei Yusuke 1, Watanabe Yuu 1, Harada Makoto 1, Hosoi Takuji 1, Shimura Takayoshi 1, Watanabe Heiji 1
15 Effects of NH3 plasma pretreatment for SiN/SiC interface and its surface orientation dependence Nara Inst. of Sci. and Tech.　*Iwasaki Yoshinori 1, Yano Hiroshi 1, Hatayama Tomoaki 1, Uraoka Yukiharu 1, Fuyuki Takashi 1
△ 16 High Temperature Characteristics of 4H-SiC MIS Devices with AlON/SiO2 Stacked Gate Dielectrics Osaka Univ. 1, ROHM 2　Hosoi Takuji 1, Kagei Yusuke 1, Harada Makoto 1, Watanabe Yuu 1, Mitani Shuhei 2, Nakano Yuki 2, Nakamura Takashi 2, Shimura Takayoshi 1, Watanabe Heiji 1
△ 17 Capacitance-Voltage characteristics of 3C-SiC with buried insulating layer MOS structures Kyushu Inst. of Tech. 1　*Tanehira Takafumi 1, Nakano Takahiro 1, Matsuishi Tomoya 1, Nakao Motoi 1
15.6 Group-IV Compounds
Sept. 3 9:30〜12:30
3a-CE-　/ I
1 Thermoelectric Properties of Dense SiC Chubu Univ. 1, AIST 2, National Defense Academy 3, Yokohama National Univ. 4, Shimane Univ. 5　*Fukuda Shinji 1, Kato Tomohisa 2, Okamoto Yoichi 3, Nakatsugawa Hiroshi 4, Kitagawa Hiroyuki 5, Yamaguchi Satarou 1
2 Current-Voltage Characteristics of Diode Using High-Purity Semi-insulating 4H-SiC Osaka Electro-Communication Univ. 1　*Tano Shoichi 1,Takahashi Miyuki 1,Kagawa Yoshitaka 1,Miyake Takayuki 1,Matsuura Hideharu 1
3 Characterization of Intrinsic Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy Osaka Electro-Communication Univ. 1　*Miyake Takayuki 1, Tano Shoichi 1, Kagawa Yoshitaka 1, Takahashi Miyuki 1, Matsuura Hideharu 1
4 Charge Collection Efficiency of 6H-SiC Diodes by a Heavy Ion with Several Hundreds of MeV JAEA 1, UEC 2, AIST 3　*Onoda Shinobu 1, Ohshima Takeshi 1, Iwamoto Naoya 1,2, Hirao Toshio 1, Kojima Kazutoshi 3, Kawano Katsuyasu 2
5 Device simulation of optimum structure for implanted 4H-SiC bipolar junction transistor. Hosei Univ. 1　*Yuki Watabe 1, Tomonori Misawa 1, Taku Tajima 1, Masataka Satoh 1, Tohru Nakamura 1
6 Impact of Carbon Cap annealing on Gate Oxide Reliability on 4H-SiC (000-1) C-face AIST 1, FED 2　Shinsuke Harada 1, Makoto Kato 1, Sachiko Ito 1, Kenji Suzuki 1, Takasumi Ohyanagi 2, Junji Senzaki 1, Kenji Fukuda 1, Hajime Okumura 1, Kazuo Arai 1
Break 11:00〜11:15
7 Electromigration life time of a heat-resistive via-hole Al interconnect NRC, Nissan Motor 1, Adv. Inv. Lab., FED 2, ESERL, AIST 3 　*Satoshi Tanimoto 1,2, Naoki Nishio 1, Tatsuhiro Suzuki 1, Hiromichi Oohashi 3
8 4H-SiC MOSFET with Al2O3 Gate Insulator grown by MOCVD using O2 as an oxidant gas Tokyo Institute of Technology, P&I Lab. 1, Mitsubishi Electric Corporation 2　Hitoshi Moriya 1,Shiro Hino 2,Naruhisa Miura 2,Tatsuo Oomori 2,Eisuke Tokumitsu 1
△ 9 Fabrication and Electrical Characterization of SiC MOSFETs with a Three-Dimensional Gate Structure Kyoto Univ.　Yuichiro Nanen 1, Hironori Yoshioka 1, Masoto Noborio 1, Jun Suda 1, Tsunenobu Kimoto 1
10 Fabrication of 4H-SiC CMOS with pyrogenic-processed gate oxide AIST 1　*Okamoto Mitsuo 1, Yatsuo Tsutomu 1, Fukuda Kenji 1, Okumura Hajime 1
11 Measurement of Single Event Transient Currents Induced in 6H-SiC p-MOS Capacitors UEC 1, JAEA 2, AIST 3　*Iwamoto Naoya 1,2, Ohshima Takeshi 2, Onoda Shinobu 2, Kojima Kazutoshi 3, Kawano Katsuyasu 1
15.7 Epitaxial Growth Fundamentals
Sept. 4 9:30〜11:45
4a-CE-　/ I
1 Study for the palladium on sulfur covered GaAs(001) substrate Tottori Univ.　*Asano Hiroki 1, Ishii Akira 1
2 An ab initio-based approach to adsorption-desorption behavior of Si atoms on GaAs(111)A-(2×2) surfaces Mie Univ. 1　*Tatematsu Hiroaki 1, Toru Akiyama 1,Kohji Nakamura 1, Tomonori Ito 1
3 Growth anisotropy in Ge/GaAs(001) heteroepitaxy NIMS 1, AIST 2　*Ohtake Akihiro 1, Yasuda Tetsuji 2, Miyata Noriyuki 2
4 Coarsening process of high-density InAs quantum dots on GaAsSb/GaAs layers Univ. of Electro-Commun. 1　*Kakuda Naoki 1, Yamaguchi Koichi 1
Break 10:30〜10:45
5 First-Principles Simulations of Composition Fluctuation and Residual Strain in InGaN/GaN MQW Tokyo Univ. of Sci. 1　Kiichiro Mukose 1, Masatoshi Sano 1
6 Comments on the origin of atomic arrangements in GaNxAs1-x on V-grooved substrates Mie Univ. 1　*Ito Tomonori 1, Takasu Naoki 1, Akiyama Toru 1, Nakamura Kohji 1
7 Theoretical study on reconstructions of InP(111)A surface Mie Univ. 1,　 *Kondo Tomoyuki 1,Tatematsu Hiroaki 1, Akiyama Toru 1, Nakamura Kohji 1,Ito Tomonori 1
8 First-principles evaluation of the poly-dependence of the local dielectric constant for SiC Electro-Communications Univ. 1 , Tokyo Univ. 2　Kohei Satou 1 , Yuichi Iwasaki 1 , Jun Nakamura 1,2 , Akio Natori 1
15.8 Nano-impurities and defects
Sept. 5 9:00〜12:30
5a-CE-　/ I
1 Materal Design for the gettering of 3d transition metals in Si *Renesas Technology corp. 1,Osaka univ. ISIR 2　*Matsukawa Kazuhito 1,Hattori Nobuyoshi 1,Murakami Eiichi 1,Shiari Koun 2,Katayama-Yoshida Hiroshi 2
2 Behavior of Cu impurity in silicon ISIR, Osaka Univ. 1, Renesas Technology Corp. 2, ES, Osaka Univ. 3　K. Shirai, K. Matsukawa, H. Yamaguchi
3 In-situ observation of stress induced diffusion of iron impurities in silicon by Mössbauer spectroscopy Tokyo Inst.Tech. 1, SIST 2　*Kunifumi Suzuki 1, Tomohiro Kamimura 2, Masahiro Ichino 2, Yutaka Yoshida 2, Koichiro Asahi 1
4 In-situ observation of β-FeSi2 under light and/or γ-ray illumination by Mössbauer Spectroscopy SIST 1, Ibaraki Univ 2　*Tomohiro Kamimura 1, Yoshida Yutaka 1, Udono haruhiko 2
5 Annealing behavior of Cu centers in Si crystals studied by DLTS measurement Hitachi Ltd., Hitachi Res. Lab1, Renesas Technology Corp., Wafer Process Engineering Develop. Div.2 　*Minoru Nakamura1, Susumu Murakami1, Naoyuki J. Kawai2, Kazuhito Matsukawa2, Shigeaki Saito2, Hiroyuki Arie2
▲ 6 Carrier Transport Mechanism in ZnSnAs2 thin films Nagaoka Univ. of Tech. 1　Asubar Joel T 1, Jinbo Yoshio 1, Uchitomi Naotaka 1
Break 10:30〜10:45
7 Correlation of Metastable defects in Hydrogen-Implanted n-Type Silicon at Low Temperatures Aichi Institute of Technorogy 1,S. H. I. Examination & Inspection Ltd. 2　Nagae Youichi 1,Akiyama Kazuki 1,*Tokuda Yutaka 1,Sakane Hitoshi 2
8 Infrared absorption of low dose irradiated low carbon concentration CZ-Si (4) Estimation of complex concentration Tokyo U. Agr.&Tech. 1, Toyota Motor Co. 2, Toyota Central R&D Labs. 3, Osaka Pref. Univ. 4　*Inoue Naohisa 1, Goto Yasunori 2, Sugiyama Takahide 3, Kawamura Yuichi 4, Takubo Yoshitaka 1
9 Infrared absorption of radiation-induced complexes in hydrogenated Si crystal Tokyo U. Agr.&Technol. 1,　SINTEF 2, Kumamoto　N. Col. Tec. 3, JAEA Takasaki 4, Systems Eng. Co. 5　*Inoue Naohisa 1, Ulyashin Alexander 2, Ohyama Hidenori 3, Yoneoka Masashi 3, Hanaya Hiroaki 4, Sugaya Takuo 5, Takubo Yoshitaka 1
10 Thermally equilibrium point defects in silicon crystals: The Frenkel type or the Schottky type? Tohoku Univ., Inst. for Mater. Res.　*Suezawa Masashi 1, Yonenaga Ichiro 1
11 Diffusion coefficient of self-interstitial in silicon crystals (II) SUMCO TECHXIV Co. Technol. Div.　Kozo Nakamura
12 Compensation effect in Si nanowires codoped with B and P NIMS1, JST PRESTO2, Inst. of Appl. Phys., Univ. of Tsukuba3　*N. Fukata1,2, M. Seoka3, N. Saito3, J. Chen1, T. Sekiguchi1,
K. Murakami3
13 hkl-Dependence Analysis for Simply Identifying Peak Broadening due to Twist Distribution: Effects of Acceptance Angle of X-ray Detector NTT PH Lab. 1, IMR Tohoku Univ. 2, JST-CREST 3　*Nakashima Kiichi 1, Matsuoka Takashi 2 3