14 Semiconductors B (Exploratory Materials / Physics / Devices)
14.1 Exploratory Materials Physics
Sept. 3 10:00～17:30
3a-ZR-　/ III
1 Cyclic change of the SOG(Spin-on-glass)/LiMn2O4 surface:observation by an atomic force microscope with a conductive probe. Hosei Univ. 1,Osaka Kyoiku Univ.2　*Nakanishi Yusuke 1,Yuasa Yuuki 1,Kuriyama Kazuo 1,Kushida Kazumasa 2
2 Lattice Constant of Stable Phase Including CuIn3Se5 Ishinomaki Senshu-Univ.1　Tiharu Oonuma 1,*Katsumi Mochizuki1
3 ZnO Quantum dot infrared Detectors. TOYOTA Central R&D Labs. Inc.　*Sugimoto Noriaki 1,Funabashi Hirofumi 1,Yamadera Hideya 1,Yoshida Tomoyuki 1
4 Characterizations of semiconductor hetero-layer interface by terahertz emission spectroscopy Osaka City Univ. 1　Sugimoto　Kazutaka 1,Mimuro Toshihiro 1,Nashima　Shigeki 1,Hosoda Makoto 1
5 Mapping of Photothermal Divergence Signal on GaAs Anan NCT 1,Univ. of Tokushima 2　*Kei Nakagawa 1,Kohdai Iwasa 1,Minoru Yamamoto 1,Nobutomo Uehara 1,Masaru Kamano 1,Tatsuo Hasegawa 1,Masuo Fukui 2
Break 11:15～11:30
6 Investigation ofoptical properties of &beta-Ga2O3 film with silicon addition Kumamoto NCT1, Koto manufacturing Co. LTD2, Japan gas chemi.3　*Kenichiro Takakura1, Daiki Koga1, Kiyoteru Hayama1, Hidenori Ohyama1, Yoshio Kayamoto2, Mutsuo Shibuya3
7 Breakdown characteristics on Schottky barrier diodes based on a β-Ga2O3 substrate. Kyoto Univ. 1, Nippon Light Metal 2　*Oshima Takayoshi 1, Okuno Takeya 1, Arai Naoki 2, Suzuki Norihito 2, Ohira Shigeo 2, Fujita Shizuo 1
△ 8 Design and luminescence properties of Eu2+ doped glass ceramics phosphor precipitated with β-Ca2SiO4 and Ca3Si2O7 Kyoto Univ. 1　*Nakanishi Takayuki 1, Tanabe Setsuhisa 1
△ 9 Measurement of Shubnikov-de Haas oscillation in graphene RCIQE Hokkaido Univ. 1　*Konishi Keita 1,Matsuda Takashi 1,Yoh Kanji 1
10 Observation of Quantum Hall Effect and Magnetoresistance Effect in Single Layer Graphene IIS, Univ. of Tokyo 1, INQIE, Univ. of Tokyo 2　*Ono Masashi 1, Masubuchi Satoru 1, Kawamura Minoru 1, Machida Tomoki 1,2
11 Effect of step structure on SiC substrate for conductance of double layer graphene NTT Basic Research Labs. 1　*Nagase Masao 1, Hibino Hiroki 1, Kageshima Hiroyuki 1, Yamaguchi Hiroshi 1
Lunch 13:00～14:00
3p-ZR-　/ III
1 Local structures of Ga and electron states in β-FeSi2 crystals grown from Ga solvent Nagoya Univ.1, Nagoya Univ. Venture Business Laboratory 2, Ibaraki Univ. 3　*Yamada Hiroomi 1, Tabuchi Masao 2, Takeda Yoshikazu 1, Udono Haruhiko 3
2 Investigation of deposit condition in the first stage of β-FeSi2 homoepitaxial growth Ibaraki Univ. 1,JAEA 2　*Wakaya Ippei 1,Ochiai Kunihito 1,Udono Haruhiko 1,NaganoTakatoshi 2,Yamada Youichi 2,Yamamoto Hiroyuki 2,Esaka Fumitaka 2
▲ 3 Surface analysis on single-crystalline β-FeSi2 Ibaraki Univ. 1, JAEA 2　 Wei Mao1,2, Ippei Wakaya1, Yoichi Yamada2, Fumitaka Esaka2, Hiroyuki Yamamoto2, Shin-ichi Shamoto2,
Kenji Yamaguchi2, Haruhiko Udono1
4 Study of Surface Structure on β-FeSi2 Surface Using First-Principle Calculations
 Materials Science & Engineering, IBARAKI Univ.
　Nagano Takatoshi
5 Epitaxial Relationship between 3C-SiC and β-FeSi2 thin film Kanagawa Ind. Tech. Cent. 1　Kensuke Akiyama 1, Satoru Kaneko 1, Teiko Kadowaki 1, Yasuo Hirabayashi 1
6 Influence of Residual Gases on β-FeSi2 Layers Formed by an Iron Vacuum Deposition Method II O.E.Device System R&D Center,Kanazawa Inst.Tech.　Ishii Makoto,Miyata Toshihiro,Minami Tadatsugu
Break 15:30～15:45
7 Influence of defects at interfaces on luminescence properties in p-Si/β-FeSi2/n-Si double-heterostructures on Si(111). Inst. of Appl. Phys., Univ. of Tsukuba 1　*Mitsushi Suzuno 1, Tomoaki Koizumi 1, Takashi Suemasu 1
8 Epitaxial growth and luminesence characterization of SiGe/β-FeSi2/SiGe(001) structure by molecular beam epitaxy Univ. of Tsukuba 1　*Koizumi Tomoaki 1, Suzuno Mitsushi 1, Suemasu Takashi 1
9 Fabrication and near-infrared photoluminescence of eutectic mixture of β-FeSi2 and Si Ibaraki National College of Technology 1,Japan Atomic Energy Agency 2　*Akutsu Keiichi 1,Hara Yoshiaki 1,Nakaoka Kanichiro 1,Yamamoto Hiroyuki 2
10 Photoreflectance spectra of Al-doped β-FeSi2 epitaxial films Osaka Univ. 1　*Noda Keiichi 1,Hashimoto Syoutaro 1,Terai Yoshikazu 1,Fujiwara Yasufumi 1
11 X-ray photoelectron spectroscopy of (FeSi2)xO1-x Okayama Univ. Sci. 1,Tsuyama NCT. 2,AIST 3,ITC of Okayama Pref. 4　*Kittaka Toshiaki 1,Takarabe Kenichi 1,Iwami Motohiro 1,Nakamura Shigeyuki 2,Chayahara Akiyoshi 3,Kunitsugu Shinsuke 4
12 In-situ observation of formation of Si clathrate Ba8Si46 NIMS　Imai Motoharu
13 Raman scattering measurements of clusters-assembled films of transition-metal encapsulating Si clusters nst. of Appl. Phys. Univ. of Tsukuba 1, AIST-Nanodevice Innovation Research Center 2　*Kintou Hiroshi 1,2, Matsusita Yusuke 1,2 Uchida Noriyuki 2, Tada Tetsuya 2, Kanayama Toshihiko 2, Murakami Kouichi
14.1 Exploratory Materials Physics
Sept. 4 9:30～12:15
4a-ZA-　/ III
1 Characterization of ErSi2 nanowires fabricated on Si substrates and its application Tokyo univ. of Sci 1, RIKEN 2, Toyo Univ. 3　Katayama Yusuke 1, Susumu Harako 1, Tomohiro Kobayashi 2, Takashi Meguro 2, Shuji Komuro 3, Zhao Xinwei 1
2 Electronic Structures of Alkaline-Metal Monosilicides National Inst. Adv. Ind. Sci. Technol. 1 　*Imai Yoji 1, Watanabe Akio 1
3 Molecular Beam Epitaxy of n+-BaSi2/BaSi2/CoSi2/p+-Si structure for Si-based Schottky Barrier Solar Cell Inst. of Appl.Phys.,Univ.of Tsukuba 1,JST-PRESTO 2　*Matsumoto Yuta 1,Tsukada Dai 1,Suemasu Takashi 1,2
4 Fabrication of BaSi2 films on AIC substrates for thin-film solar cells Inst.of Appl. Phys., Univ. of Tsukuba 1, JST-PRESTO 2　*Tsukada Dai 1,Matsumoto yuta 1,Suemasu Takashi 1,2
5 Dielectric function of ferromagnetic silicide Fe3Si epitaxial film Kyoto Univ. 1, Kushu Univ. 2　Hiraiwa　Yusuke 1, Maeda Yoshihito 1, Ando Yuichiro 2, Ueda Koji 2, Sadoh Taizoh 2, Miyao Masanobu 2
Break 10:45～11:00
6 Ion beam scattering analysis of epitaxy of Fe3Si and related films Kyoto Univ. 1, Kyushu Univ. 2, JAEA 3　Maeda Yoshihito 1,3, Hiraiwa Yushuke 1, Ando Yuichiro 2, Ueda Koji 2, Narumi Kazumasa 3, Hamaya Kohei 2, Miyao Masanobu 2
7 Epitaxial growth of Fe3Si/CaF2/Fe3Si MTJ on Si(111) for TMR device Univ. of Tsukuba Inst. of Appl. Phys. 1, NRI-AIST 2　Teddy Harianto 1, Sadakuni Kenji 1, Suemasu Takashi 1, Akinaga Hiroyuki 2
8 Molecular beam epitaxy of CaF2/Fe3Si/CaF2/Fe3Si/CaF2 ferromagnetic resonant-tunneling diode structure Inst. of Appl. Phys, Univ. of Tsukuba 1, NRI-AIST 2　*Sadakuni Kenji 1, Teddy Harianto 1, Suemasu Takesh 1, Matsunaga hiroyuki2
9 Formation and magnetic properties of ultrahigh density Fe3Si nanodots epitaxially grown on Si(111) substrates The Univ. of Tokyo 1　Shogo Amari 1, Kenjiro Fukuda 1, Yoshiaki Nakamura 1, Masakazu Ichikawa 1
10 Electronic structure of ferromagnetic silicide and Heusler alloy/ semiconductor junctions Kansai Univ. 1　Hiroyoshi Itoh 1
14.2 Heterostructures and Quantum Nanostructures
Sept. 3 9:30～19:00
3a-ZQ-　/ III
1 Observation of spin dynamics in CdTe/ZnTe quantum structures by time-resolved Kerr rotation Univ. of Tsukuba 1,Osaka Univ. 2　*Shinsuke Nozawa 1,Shinichi Tomimoto 1,Yoshikazu Terai 2,Shinji Kuroda 1,Koki Takita 1,Yasuaki Masumoto 1
2 GaAs/AlAs multilayer cavity structures with two-photon resonance quantum well grown by MBE Univ.of Tokushima 1　*Kanbara Toshiyuki 1,Yano Shinsuke 1,Morita Ken 1,Kitada Takahiro 1,Isu Toshiro 1
3 Asymmetric temporal profile of optical Kerr signal in GaAs/AlAs multilayer cavity Tokushima Univ. 1　*Morita Ken, Kanbara Toshiyuki, Yano Shinsuke, Kitada Takahiro, Isu Toshirou
4 Optical Kerr signals of GaAs/AlAs multilayer cavity structures with different multilayer periods Univ. of Tokushima 1　*Yano Shinsuke 1, Kanbara Toshiyuki 1, Morita Ken 1, Kitada Takahiro 1,
Isu Toshiro 1
5 Quality factor dependence of simulated optical Kerr signal from GaAs/AlAs multilayer cavity structures Univ. of Tokushima　*Kitada Takahiro 1, Kanbara Toshiyuki 1, Yano Shinsuke 1, Morita Ken 1, Isu Toshiro 1
6 Optical anisotropy of two-photon absorption in (001) quantum wells Univ. of Tokushima 1　*Niki Nobuyoshi 1, Morita Ken 1, Kitada Takahiro 1, Isu Toshiro 1
Break 11:00～11:15
7 Density control of confined excitons in GaAs thin films Kobe Univ.1, The Univ. of Tokushima2　Osamu Kojima1, Takashi Kita1, Osamu Wada1, Toshiro Isu2
8 Dependence of electron g factor on PL energy in GaAs/AlGaAs quantum well Konan Univ. 1, Quantum Nano-Tech. Lab. 2, NTT Basic Research Labs. 3 　Wataru Shichi 1, Testu Ito 2, Masao Ichida 1,2, Hideki Gotoh 3, Hidehiko Kamada 3, Hiroaki Ando 1,2
9 Research on core-multishell nanowires NTT Basic Research Labs. 1　*Tateno Kouta 1,Zhang Guoqiang 1,Nakano Hidetoshi 1
▲ 10 Structural and optical characterizations of GaAs nanowires NTT BRL 1　*Guoqiang Zhang 1, Kouta Tateno 1, Haruki Sanada 1, Takehiko Tawara 1, Hidetoshi Nakano 1
11 I-V measurements of vertically standing InAs nanowires grown by Selective-area MOVPE Graduate School of IST Hokkaido UNIV. 1,RCIQE 2　*Tanaka Tomotaka 1,2,Tomioka Katyuhiro 1,2,Kitauchi Yusuke 1,Motohisa Junichirou 1,Hara Sinjirou 1,2,Fukui Takashi 1,2
Lunch 12:30～13:30
3p-ZQ-　/ III
1 JJAP Paper Award: Imaging of Interference between Incident and Reflected Electron Waves at an InAs/GaSb Heterointerface by Low-Temperature Scanning Tunneling Spectroscopy 1 NTT Corporation, 2 CNRS, 3 NTT Electronics Techno Corporation，4 SORST-JST, 5 Tohoku University　Kyoichi Suzuki1, Kiyoshi Kanisawa1, Simon Perraud1,2, Mineo Ueki3, Kei Takashina1, and Yoshiro Hirayama1,4,5
2 Indirect hole transition in asymmetric triple-quantum-well with thin barrirers. Osaka City Univ. Johhohtsushin Inst. Doshisha Univ.　*Nishii Yuichi, Hosoda Makoto, Akahane Kouichi, Ohtani Naoki,
3 Spin Relaxation time of high indium content InGaAs/GaAs quantum wells Waseda Univ. 1, S.I.N.N.-CAS 2, I.S.-CAS 3　Nosho Hidetaka 1, Asami Takeshi 1, Umi Takehiko 1, Lu Shulong 2, Niu Zhichuan 3, Tackeuchi Atsushi 1
4 Evaluation of AlGaAs Quantum Well by Photorefrectance Using InGaN Quantum Well Laser II Evaluation of AlGaAs Quantum Well by Photorefrectance Using InGaN Quantum Well Laser II　*Takahiro Igawa 1,Takeshi Inada 1,Shinich Kakuda 1,Tomohiko Sugiura 1, Wataru Susaki 1
5 Analyze of 1.55um QWR-VCSEL grown on (775)B InP substrates by MBE Ⅲ Ehime Univ. 1, Osaka Univ. 2　*Matsugi Toyokazu 1, Imazu Shinjirou 1, Shimomura Satoshi 1, Mouri naoyoshi 1, Ozaki Shinji 2, Fujita Yoshiya 2, Sasahata keishi 2
6 Gain spectra of self-organized GaAs/(GaAs)4(AlAs)2 QWR lasers grown on (775)B GaAs substrates by MBE. Ehime Univ. 1,Osaka Univ. 2,Tokushima Univ. 3　*Shinjiro Imadu 1, Toyokazu Matsugi 1, Naoyoshi Mouri 1, Takeya Fujita 2, Takahiro Kitada 3, Satoshi Shimomura 1
7 Observation of Highly Efficient Spontaneous Emission from Nanostructures on Patterned Substrates – III: Time-resolved PL AIST 1　*Wang Xue-Lun 1
8 Imaging of Superlattice Band Structures by Low-Temperature Scanning Tunneling Spectroscopy on Cleaved Surfaces NTT Basic Research Laboratories, NTT Corporation　*Kyoichi Suzuki, Kiyoshi Kanisawa, Koji Onomitsu, Toshimasa Fujisawa
Break 15:45～16:00
9 Control of the mechanical vibration of a cantilever by carrier excitation NTT BRL 1, Tohoku Univ. 2　*Hajime Okamoto 1, Daisuke Ito 1,2, Koji Onomitsu 1, Haruki Sanada 1, Hideki Gotoh 1, Tetsuomi Sogawa 1, Hiroshi Yamaguchi 1,2
10 Investigation of photoluminescence from InAs / GaAs surface Toyota Tech. Inst. 1　Kosei Fukui 1, Itaru Kamiya 1
11 Negative differential resistance characteristic of InGaAs dual channel transistor AIST 1,Musashi Inst.2 ,Shibaura Inst. 3　*Yagi Nozomi 1,2 ,Sugaya Takeyoshi 1,Komori Kazuhiro 1,Furuya katsumi 1,Numakami Osamu 1,2,Hori Souitirou 3
12 Study of Si surface preparation method for growth of fluoride heterostructures in SiO2 holes Tokyo Tech. 1　*Miura Kei 1, Hoshino Norihumi 1, Oshita Takao 1, Tsutsui Kazuo 1
13 Fluoride resonant tunneling diodes on Si substrates using NiSi2 buffer layer Tokyo Tech Univ. 1　*Yokote Yoshitomo 1,Takahashi Keita 1, Yoshizumi Tomoki 1,Oshita Takao 1,Tsutsui Kazuo 1
14 Fabrication of fluoride resonant tunnel diodes on Ge(111) substrates Tokyo Tech.　*Takahashi Keita, Yokote Yoshitomo, Oshita Takao, and Tsutsui Kazuo
15 Fabrication of superconducting nanogap electrodes using a combination of molecular ruler and electron beam lithographic techniques RIKEN1, Chiba Univ. Advanced Integration Science2　*R. Negishi1, T. Nishino1,2, T. Yamaguchi1, K. Ishibashi1
▲ 16 Resonance Characteristic of beam structure fabricated by repeated angled etching NTT Basic Research Labs.　*Singh Vijay Kumar, Yamazaki Kenji, Tawara Takehiko, Yamaguchi Hiroshi
▲ 17 Bit operation in a parametrically pumped electromechanical resonator NTT Basic Res. Labs 1　Mahboob Imran 1, Yamaguchi Hiroshi 1
▲ 18 Motion Detection of a micromechanical resonator embedded in a DC-SQUID NTT BRL 1, Delft Univ. Tech. 2
　*Etaki S. 1,2, Poot M. 2, Mahboob I. 1, Onomitsu K. 1, van der Zant H.S.J. 2, Yamaguchi H. 1
19 Lifetime reduction on n-InGaAs luminescence induced by Superconducting Nb electrode RIES Hokkaido Univ.1,Central Res. Lab. Hamamatsu Photonics 2,CREST JST 3,NTT Basic Res. Lab. 4　*Shuhei Kuramitsu 1,Hirotaka Sasakura 1,Kazunori Tanaka 2,3,Tatsushi Akazaki4,3, Hidekazu Kumano1,3, Ikuo Suemune1,3
20 Superconductor-based luminescence enhancement and internal quantum efficiency of InGaAs/InP LED with Nb electrodes RIES Hokkaido University1, JST-CREST2, Central Research Lab., Hamamatsu Photonics3, NTT Basic Research Lab. 4　Ikuo Suemune1,2, Yujiro Hayashi1, Shuhei Kuramitsu1, Kazunori Tanaka2,3, Tatsushi Akazaki2,4, Hirotaka Sasakura1,2, Hidekazu Kumano1,2
14.2 Heterostructures and Quantum Nanostructures
Sept. 4 9:30～18:30
4a-ZQ-　/ III
▲ 1 Site-Control of InAs Quantum Dots and Its Application to Single Electron Transistors IIS and INQIE Univ. of Tokyo 1, CREST-JST 2　*Cha KyuMan 1, Shibata Kenji 1, Hirakawa Kazuhiko 1,2
2 Reset process in double barrier resonant tunneling photodetector structures IIS and INQIE Univ. of Tokyo 1, CREST-JST 2　*Sakata Yusuke 1, Shibata Kenji 1, Takenaka Satoshi 1, and Hirakawa Kazuhiko1,2
3 Collective electron transport in silicon nanocrystal assembly Dept.of Physics. Konan Univ. 1,Dep.of Pure and Appl. Kansai Univ. 2,Quantum Nano Tech.Lab, Konan Univ. 3　*M Gibo 1,M Inada 2,I Umezu 1,3,T Saitoh 2,A Sugimura 1,3
4 Phosphorus Ion Doping for Silicon Nanocrystal Assembly Dept.of Physics. Konan Univ. 1, Dept. Pure and Appl. Phys, Kansai Univ. 2, Ion Engineering Research Institute Corporation 3,Quantum Nano Tech.Lab. 4
　*Hirata Kei 1,Gibo Manabu 1,Yoshida Kenichi 3,Inada Mituru 2,Umezu Ikurou 1,4,Nagamachi Shinji 3,Saitoh Tadashi 2,Sugimura Akira 1,4
▲ 5 Ambient photoluminescence stability of wide band gap silicon nanocrystals prepared by ns pulsed laser ablation in water AIST　*Vladimir Švrček 1, Hiroyuki Fujiwara 1, Michio Kondo 1
6 Concentration dependence characteristic of lifetime of CdSe nano particles Dept. of Physics, Konan Univ. 1, Quantum Nano Tech. Lab. 2　*Tai Kohei 1, Wei Lü 2, Umezu Ikurou 1,2, Sugimura Akira 1,2
Break 11:00～11:15
7 Highly Luminescent InP Nanocrystals Prepared by a Solvothermal Route National Inst. Adv. Ind. Sci.& Tech.1　*Norio Murase1, Chunliang Li1, Masanori Ando1
8 Local Field Effects on Exciton Fine Structure Trapped by Nitrogen Isoelectronic Centers in GaAs Kobe Univ. 1　*Yukihiro Harada 1, Takashi Kita 1, Osamu Wada 1
9 Design and fabrication of ridge nanoapertures for quantum dot devices NEC Corp. 1, INQIE 2, IIS 3, RCAST 4, Univ. of Tokyo　*Akihiro Kirihara 1,2, Junichi Fujikata 1, Toshihiro Nakaoka 2,3, Naoto Kumagai 2, Katsuyuki Watanabe 2, Masayuki Shirane 1,2, Shinichi Yorozu 1,2, Yasuhiko Arakawa 2,3,4
10 Magnetic field dependence of photoluminescence from ground- and excited trion in quantum dots NTT-BRL 1　Sanada Haruki 1, Kamada Hidehiko 1, Sogawa Tetsuomi 1, Gotoh Hideki 1, Tokura Yasuhiro 1, Yamaguchi Hiroshi 1, Nakano Hidetoshi 1
▲ 11 Strong Linear Polarization of Exciton/Biexciton Photoluminescence from Single Self-Assembled Hexagonal GaN/AlN Quantum Dots
 Research Center for Advanced Science and Technology 1, Institute for Nano Quantum Information Electronics 2, Institute of Industrial Science 3
　*Kindel Christian 1, Kako Satoshi 2, Kawano Takeshi 1, Oishi Hiroaki 1, Arakawa Yasuhiko 1 2 3
Lunch 12:30～13:30
4p-ZQ-　/ III
1 Formation of nanoscale magnetic field by nuclear spin switch in individual quantum dots JST CREST　1, RIES　2, Hokkaido Univ. 3　*Hirotaka Sasakura 12, Satoru Adachi 13, Reina Kaji 3, Shunichi Muto 13
△ 2 Electrical detection of optically excited electron spins in quantum dots with ferromagnetic electrodes RCAST 1, IIS 2, INQIE 3, Univ. of Tokyo　Ohno Kenichi 1, Hamaya Kouhei 2,3, Nakaoka Toshihiro 2,3, Kumagai Naoto 3, Hirakawa Kazuhiko 2,3, Machida Tomoki 2,3, Arakawa Yasuhiko 1,2,3
△ 3 Which-Path information and photon interference effect of luminescence from a single quantum dot RIES 1,Hokkaido Univ 2,JST CREST 3　*Ekuni Shingo 1,Nkajima Hideaki 1,Kumano Hidekazu 1,3,Sasakura Hirotaka 1,Adachi Satoru 2,Muto Syuniti 2,Suemune Ikuo 1,3
△ 4 Observation of strong coupling between biexciton-exciton transition in quantum dot and photonic crystal nanocavity mode INQIE 1, RCAST 2 Univ. of Tokyo, NEC 3　*Yautomo Ota 1,2, Masayuki Shirane 1,3, Masahiro Nomura 1, Naoto Kumagai 1, Satomi Ishida 2, Satoshi Iwamoto1,2, Shinichi Yorozu 1,3, Yasuhiko Arakawa 1,2
△ 5 Observation of Biexcitonic Rabi Oscillation by Photocurrent Spectroscopy at Telecommunication Wavelength INQIE 1, RCAST 2,IIS 3 the Univ. of Tokyo　*Kodera Tetsuo 1, Suzuki Ayako 2, Miyazawa Toshiyuki 1, Takagi Hiroyuki 2, Kumagai Naoto 1, Watanabe Katsuyuki 1, Nakaoka Toshihiro 1,3 and Arakawa Yasuhiko 1,2,3
△ 6 Damping model of excitonic Rabi oscillations in quantum dots ensemble National Inst. of Information and Communications Technology 1, Sophia Univ. 2,JST-PREST 3　*Kujiraoka Mamiko 1,2, Hayase-Ishi Junko 1,3, Akahane Koichi 1, Yamamoto Naokatsu 1, Ema Kazuhiro 2, Sasaki Masahide 1
△ 7 Excitation power dependence of spin relaxation time in InAs columnar quantum dots Waseda Univ. 1, S.I.N.N.- CAS 2, EPFL 3　*Umi Takehiko 1, Li Lianhe 2, Nosho Hidetaka 1, Asami Takeshi 1, Lu Shulong 2, Tackeuchi Atsushi 1
8 Polarization rotation of neutral exciton PL in single InAlAs QDs Hokkaido Univ. 1, RIES 2　*Kaji Reina 1, Adachi Satoru 1, Muto Shunichi 1, Sasakura Hirotaka 2, Kumano Hidekazu 2, Suemune Ikuo 2
9 Pump-probe measurement of nuclear spin relaxation in single InAlAs quantum dots Hokkaido Univ. 1, RIES 2　S. Furukawa 1, R. Kaji 1, S. Adachi 1, H. Sasakura 2, S. Muto 1
Break 15:45～16:00
10 Fabrication and Optical Characterization of InAsP Quantum Dot in InP Nanowire Grown by SA-MOVPE Graduate School of IST, Hokkaido Univ. 1, RCIQE, Hokkaido Univ. 2, Delft Univ. of Tech. 3　*Kobayashi Yasunori 1, Maarten van Kouwen 3, Fukui Takashi 1,2, Valery Zwiller 3, Motohisa Junichi 1
11 Exciton fine structure and polarization conversion in single quantum dots Hokkaido Univ.　Tadatoshi Shindo 1, Reina Kaji 1, Satoru Adachi 1, Syunichi Muto 1
12 Effect of localized electron in wetting-layer on optical properties of InAs/InP quantum dots Keio Univ. 1, NIMS 2, Fujitsu Lab. 3　*Mizuno Dai1, Kubota Ryousuke1, Saiki Toshiharu1, Sakuma Yoshiki2, Usuki Tatsuya3
13 Emission lineshape of single InAs/InP quantum dots NIMS 1, Fujitsu Lab. 2　*Kuroda Takashi 1, Sakuma Ysoshiki 1, Takemoto Kazuya 2, Usuki Tatsuya 2
14 Theoretical study of exciton fine structure in single quantum dots INQIE Univ. of Tokyo 1, NIMS 2, Fujitsu Labs. Ltd. 3, IIS Univ. of Tokyo 4　*Usuki Tatsuya 1, Sakuma Yoshiki 2, Takemoto Kazuya 3, Miyazawa Toshiyuki 1, Yokoyama Naoki 3, Arakawa Yasuhiko 1,4
15 Photoluminescence property of annealed InAs quantum dots capped by InGaAs layers (II) Doshisya Univ. 1, ATR Wave Engineering Labs. 2　*Hiratsuka Shingo 1, Saravanan Shanugam 2, Harayama Takahisa 2, Ohtani naoki 1
16 Fast carrier relaxation of InAs quantum dots embedded in strain-relaxed In0.35Ga0.65As barriers Univ. of Tokushima 1.　*Mukai Takuya 1. Takahashi Tomoya 1. Morita Ken 1. Kitada Takahiro 1.
Isu Toshiro 1.
17 Dynamics in Excitonic Rabi Oscillation Measured by Photocurrent at 1.3 \mu m Telecommunication Wavelength INQIE 1, RCAST 2, IIS 3, Univ. of Tokyo　*Suzuki Ayako 1,2, Kodera Tetsuo 1, Miyazawa Toshiyuki 1, Takagi Hiroyuki 1,2, Kumagai Naoto 1, Watanabe Katsuyuki 1, Nakaoka Toshihiro1,3, Arakawa Yasuhiko 1-3
18 Effects of electronic interconnection on excitonic luminescence intensity in stacked quantum dots Kobe Univ.1, NiCT2　Osamu Kojima1, Hiroaki Nakatani1, Takashi Kita1, Osamu Wada1, Kouichi Akahane2, Masahiro Tsuchiya2
19 Fluctuating Coulomb interaction between single-dot excitons and environment charges NTT Basic Research Labs. NTT Corp. 1,　*H. Kamada 1,
14.3 Process Technologies and Interface Physics
Sept. 2 9:00～17:45
2a-ZQ-　/ III
1 Deep-Level Optical Spectroscopy Investigation of Al0.3Ga0.7N/GaN Heterostructures Chubu Univ. 1, National Institute for Materials Science 2　*Yoshitaka Nakano 1, Yoshihiro Irokawa 2, Masaki Takeguchi 2
2 Evaluation of Interface State Distributions in GaN MOS Structures by Deep-Level Transient Spectroscopy Aichi Institute of Technorogy 1,Toyota Central R&D Labs 2　Takeshi Seo 1,Kazuki Akiyama 1,*Yutaka Tokuda 1,Hiroyuki Ueda 2,Narumasa Soejima 2,Osamu Ishiguro 2,Tetsu Kachi 2
3 Annealing behavior of traps in pn GaN on GaN substrate Aichi Institute of Technorogy 1,Toyota Central R&D Labs 2　Kazuki Akiyama 1,Takeshi Seo 1,*Yutaka Tokuda 1,Hiroyuki Ueda 2,Narumasa Soejima 2,Osamu Ishiguro 2,Tetsu Kachi 2
△ 4 Near-midgap deep levels in Al0.26Ga0.74N Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido Univ. 1,　*Sugawara Katsuya 1,
Kotani Junji 1,
Hashizume Tamotsu 1,
△ 5 Photo-enhanced chemical planarization of free-standing GaN (0001) Osaka Univ. 1　Junji Murata 1, Shun Sadakuni 1, Keita Yagi 1, Yasuhisa Sano 1, Hideyuki Hara 1, Kenta Arima 1, Takeshi Okamoto 1, Hidekazu Mimura 1, Kazuto Yamauchi 1
△ 6 UV-photo-induced carrier and modulation of the surface potential at the AlOx/n-GaN interface. Hokkaido Univ. 1, RCIQE 2　*MIZUE Chihoko 1 2, HASHIZUME Tamotsu 1 2
7 Change of surface potential in GaN based HFETs by Si deposition NICT 1, Fujitsu Laboratories Ltd. 2　*Norio Onojima 1, Nobumitsu Hirose 1, Takashi Mimura 1,2, and Toshiaki Matsui 1
Break 10:45～11:00
△ 8 Change in properties of Mg-doped GaN surfaces subjected to high-temperature anneal RCIQE, Hokkaido Univ. 1　*Ogawa Eri 1, Hashizume Tamotsu 1
△ 9 N-GaN surface alteration and impurity incorporation by high temperature annealing RCIQE, Hokkaido Univ. 1　*Kimura Takeshi 1,Hashizume Tamotsu 1
10 Capacitance-voltage characterization of GaN metal-insulator-semiconductor structures Ritsumeikan Univ. 1, ROHM CO.,LTD 2　*Kikawa Junjiroh 1, Horiuchi Yuki 1, Shibata Eiji 1, Kaneko Masamitsu 1
Otake Hirotaka 2, Fujishima Tatsuya 2, Chikamatsu Kentaro 2, Yamaguchi Atsushi 2 and Nanishi Yasushi 1
11 Dependence of annealing temperature for insulating layer on electrical properties of GaN MIS capacitors Ritsumeikan University 1, ROHM Co., Ltd. 2　Shibata Eiji 1, Horiuchi Yuki 1, Kaneko Masamitsu 1, Kikawa Junjiroh 1, Otake Hirotaka 2, Chikamatsu Kentaro 2, Yamaguchi Atsushi 2, Fujishima Tatsuya 2, and Nanishi Yasushi 1
△ 12 Electronic and optical passivation effects on GaN using anodic oxidation in glycol solution Graduate School of Information Science and Technology, Hokkaido Univ. 1, Research Center for Integrated Quantum Electronics, Hokkaido Univ. 2,
　*Shiozaki Nanako 1,2, Sato Taketomo 2, Hashizume Tamotsu 2,
13 I-V and C-V characteristics of rare earth metal / p-GaN Schottky contacts Fukui Univ. 1　*Yoshihiro Fukushima 1, Keita Ogisu 1, Masaaki Kuzuhara 1, Kenji Shiojima 1
△ 14 Thermal stability of Ta-based diffusion barrier metal in interconnection of GaN HEMT. Fujitsu Laboratories Ltd.　Y.Kamada, T.Ohki, N.Okamoto, K.Imanishi, T.Kikkawa, N.Hara and K.Joshin
15 Dependence of the 2DEG characteristic on AlN spacer layer in AlGaN/AlN/GaN HEMTs structure Nagoya Inst of Tech 1　*Yukiyasu Nomura 1, Masanori Suzuki 1, Takaaki Suzue 1, Egawa Takashi 1
Lunch 13:00～14:00
2p-ZQ-　/ III
1 JJAP Paper Award: A Vertical Insulated Gate AlGaN/GaN Heterojunction Field-Effect Transistor 1Toyota Central R&D Laboratories, Inc., 2Toyota Motor Corp.　Masakazu Kanechika1, Masahiro Sugimoto2, Narumasa Soejima1, Hiroyuki Ueda1, Osamu Ishiguro1, Masahito Kodama1, Eiko Hayashi1, Kenji Itoh1, Tsutomu Uesugi1, and Tetsu Kachi1
2 Thickness Variation through Fabrication Process of Anodic Porous Alumina(2) Tokyo Univ. of Agri. & Tech.　*Umezawa Yusuke 1, Tsukui Hidekazu 1, Sakashita Shinya 1, Morishita Yoshitaka 1
3 Electrochemical formation of InP porous nanostructures and subsequent etching in vertical and lateral directions Research Center for Integrated Quantum Electronics Hokkaido Univ. 1　*Sato Taketomo 1, Mizohata Akinori 1, Yoshizawa Naoki 1, Hashizume Tamotsu 1
4 Fabrication of amperometric chemical sensors based on InP porous nanostructures Hokkaido Univ. 1　*Mizohata Akinori 1, Yoshizawa Naoki 1, Sato Taketomo 1, Hashizume Tamotsu 1
5 A study of GaAs oxide with thermal stability by superheated steam for nano-patterning Kwansei Gakuin Univ. 1　*Fukiage Taku 1, Ushio Shoji 1, Matsuda Kazuhiro 1, Kaneko Tadaaki 1
6 Formation of Nb nano-electrodes in direct contact to InAs open dots by liftoff RIES 1,JST-CREST 2　*Sato Hiroyasu 1,Idutsu Yasuhiro 1,2,Sasakura Hirotaka 1,Kumano Hidekazu 1,2,Suemune Ikuo 1,2
Break 15:45～16:00
△ 7 Study on crystallization process of InAs for new fabrication process using deposited amorphous arsenic mask Graduate School of Engineering, Nagoya Univ. 1, VBL, Nagoya Univ. 2　*Motoki Kazuya 1, Suzuki Yuji 1, Tabuchi Masao 2, Takeda Yoshikazu 1
8 Fabrication and evaluation of the InAs QDs mesa structure embedded with Nb Hokkaido Univ. 1, JST-CREST 2, GCOE 3 　Yasuhiro Idutsu1,2, Saki Ito1, Hiroyasu Sato1, Jae-Hoon Huh1,3, Makoto Takada1,
and Ikuo Suemune1,2
9 Fabrication of Low-compensation GaAs Submillimeter Detector Grown by Liquid Phase Epitaxy Using Alumina Reaction Tube Tokai Univ. 1, ISAS/JAXA 2　*Kyohei Yamashita 1, Kentaro Watanabe 2, Hiroshi Murakami 2, Moriaki Wakaki 1
10 Optical properties of thermally annealed GaAs(001) surfaces Gunma Univ. 1　*Morota Hiroaki 1,Adachi Sadao 1
11 Properties of GaP(001) surfaces treated in aqueous NH4F solutions Gunma Univ. 1　*Rokugawa Hiroshi 1, Adachi Sadao 1
12 pH respose characteristics of InP-based ion-sensitive field effect transistors RCIQE Hokkaido Univ. 1　*Yoshizawa Naoki 1,Mizohata Akinori 1,Sato Taketomo 1,Hashizume Tamotsu 1
13 Cleaving Single Crystal Silicon and SiC with Electron Beam Chubu Univ. 1, Nagoya Inst. of. Tech. 2, AIST 3　*Sugimoto Tatsunori 1, Yamaguchi Satarou 1, Akiyama Ryuichi 1, Eryu Osamu 2, Kato Tomohisa 3
14.4 Ultrafast/Functional Electron Devices
Sept. 4
4a-P14-　/ III
 
Poster Session
4a-P14-1～14　9:30～11:30
1 Theoretical Analysis of Upper Limit of Cutoff Frequency in Nano-Scale InGaAs-HEMTs Tokyo Univ. Of Science 1　*Matsumoto Takayuki 1,Ikeda Naofumi 1,Yamada Ryohei 1,Yokosawa Sachiko 1,Hara Shinsuke 1,Fujishiro Hiroki 1
2 Monte Carlo Simulation of Plasmon Scattering in Base Layer of InP/InGaAs HBTs Tokyo Tech. 1　*Takafumi Uesawa 1,Yasuyuki Miyamoto 1,Kazuhito Furuya 1
3 Lateral buried growth of n+-InGaAs source/drain region for high drive current III-V channel MOSFET Tokyo Inst. Tech. 1　*Toru Kanazawa 1, Hisashi Saito 1, Kazuya Wakabayashi 1, Tomonori Tajima 1, Yasuyuki Miyamoto 1, Kazuhito Furuya 1
△ 4 InP/InGaAs SHBTs with 200nm wide emitter fabricated by EB lithography Tokyo Tech 1　Takahashi Shinnosuke 1, Yamashita Hiroaki 1, Kobayashi Takashi 1, Isogai Yuji, Suzuki Hiroyuki, Miyamoto Yasuyuki 1, Furuya Kazuhito 1
△ 5 Improvement of gate controllability of Hot Electron Transistor controlled by insulated gate Tokyo Tech　*Saito Hisashi 1, Maeng Ryoung A 1, Miyamoto Yasuyuki 1, Furuya Kazuhito 1
△ 6 Fabrication and characterization of InAs/AlGaSb HEMTs with high-k Gate Insulators Nanomaterials Microdevices Research Center, Osaka Institute of Technology　Kenji Fujiwara,Masahiro Shioji,Naoki Amano,Masatoshi Koyama,Toshihiko Maemoto,Shigehiko Sasa,Masataka Inoue
△ 7 Intrinsic Delay Analysis on Sub-100nm In0.7Ga0.3As HEMT Tohoku Univ. 1,MIT 2　*Shunsuke Fukuda 1, Tetsuya Suemitsu 1, Taiichi Otsuji 1, Dae-Hyun Kim 2, Jesus A. del Alamo 2
8 Influence of T-gate Structure on Parasitic Delay of Short-Gate InGaAs channel HEMTs Tohoku Univ. RIEC 1　*Horiike Kohei 1,Fukuda Shunsuke 1,Tetsuya Suemitsu,Otsuji Taiichi
9 DC and RF Characteristics of InAlAs/In0.7Ga0.3As HEMTs at 16 K National Inst. of Info. & Com. Tech. 1, Fujitsu Lab. Ltd. 2　*Endoh Akira 1, Watanabe Issei 1, Mimura Takashi 1,2, Matsui Toshiaki 1
10 Low-Voltage and High-Speed Operations of 30-nm-Gate InAlAs/In0.7Ga0.3As HEMTs under Cryogenic Conditions National Inst. of Info. & Com. Tech. 1, Fujitsu Lab. Ltd. 2　*Endoh Akira 1, Shinohara Keisuke 1, Watanabe Issei 1, Mimura Takashi 1,2, Matsui Toshiaki 1
11 Improvement of Noise Figure by Reducing Parasitic Capacitance in InAlAs/InGaAs HEMTs with a Cavity Structure Fujitsu 1, Fujitsu Laboratories 2　*Tsuyoshi Takahashi 1, Masaru Sato 2, Kozo Makiyama 1, Tatsuya Hirose 2, Naoki Hara 1
12 Noise characteristics of high-speed InGaAs/InAlAs HEMTs with 520-GHz-fT National Inst. of Info. & Com. Tech. 1, Fujitsu Labs. Ltd. 2　*Watanabe Issei 1, Endoh Akira 1, Mimura Takashi 1,2, Matsui Toshiaki 1
13 Pd/AlGaN/GaN HEMT-based hydrogen sensors of ppm order-sensitivity Tokyo Metropolitan Univ 1　*Takahashi Noriyuki 1,Nakamura Seiji 1,Okumura Tsugunori 1
14 A Novel AlGaN/GaN Field-Effect Diode using Fluoride-Based Plasma Treatment SHARP Corp.　*Takatani Kunihiro 1, Nozawa Tomohiro 1, Oka Tohru 1, Kawamura Hiroshi 1, Sakuno Keiichi 1
14.4 Ultrafast/Functional Electron Devices
Sept. 5
5a-P16-　/ III
 
Poster Session
5a-P16-1～23　9:30～11:30
1 Device Simulation of Breakdown Voltage for Ion Implanted AlGaN/GaN HEMT Hosei Univ. 1　*Misawa Tomonori 1,Watabe Yuki 1,Nomoto Kazuki 1,Namamura Tohru 1,
2 The Characteristics of implanted T-gate GaN/AlGaN/GaN-HEMT with short chanel Hosei Univ. 1,Chemitronics 2　*Ohta Masanao 1,Tajima Taku 1,Nomoto Kazuki 1,Kasai Takeshi 2,Satoh Masataka 1,Nakamura Tohru 1
3 Temperature Characteristic of Ion Implanted GaN/AlGaN/GaN HEMT on Si Substrates (3) Hosei Univ. 1　* Tomo Ohsawa 1, Mamoru Hishiya 1, Kazuki Nomoto 1, Tohru Nakamura 1
4 Deposited SiNx film by Surface Wave Plasma-CVD on AlGaN/GaN HEMT AIST 1　*Shuichi Yagi 1, Toshihide Ide 1, Mitsuaki Shimizu 1, Guanxi Pyou 1,
5 Recessed AlGaN/GaN-HEMTs with MIS structure using a thermal CVD SiN gate insulator Oki Electric Industry Co.,Ltd.　*Toshiharu Marui , Shinichi Hoshi , Masanori Itoh , Isao Tamai , Fumihiko Toda , Hideyuki Okita, Yoshiaki Sano , Shohei Seki
6 High-frequency characteristics of AlGaN/GaN heterojunction field-effect transistors with AlN or SiN surface passivation Japan Advanced Institute of Science and Technology 1, POWDEC K. K. 2　*Nariaki Tanaka 1, Yasunobu Sumida 2, Hiroji Kawai 2, Toshi-kazu Suzuki 1
7 Performance improvement of AlN/AlGaN/GaN normally-off MIS-HEMT Grad. School of Eng., Nagoya Inst. of Tech. 1　*Eisuke Banno 1, Yukiyasu Nomura 1, Takashi Egawa 1
△ 8 The Fabrication of E-mode AlGaN/GaN HEMTs Using Future Gate Recess Process New Japan Radio Co., Ltd. 1, Nagoya Inst. of Technology. 2　Tatsuhiko Adachi 1, Tadayoshi Deguchi 1, Hiroshi Fushimi 1, Takashi Egawa 2
9 AlGaN/GaN HFET Device Isolation by Ni Diffusion Institute of Tech. and Sci., The University of Tokushima　J.-P. Ao, H.-Y Xu, H. Yu, C.-Y. Hu and Y. Ohno
△ 10 DC Characteristics Analysis of AlGaN/GaN HFET with Gate Edge Negative Surface Charge Institute of Tech. & Sci., The University of Tokushima 1　Yusuke Ikawa 1, Yorihide Yuasa 1, Cheng-Yu Hu 1, Jin-Ping Ao 1, Yasuo Ohno 1
▲ 11 Evaluation of Buffer Layer on p-GaN with AlGaN/GaN HFET VT-VSUB Characteristics The University of Tokushima1 , Toyota Central R&D Labs.,Inc. 2,Toyota Motor Corp. 3　Cheng-Yu Hu 1, Katsutoshi Nakatani 1, Jin-Pin Ao 1, Daigo Kikuta 2, Masahiro Sugimoto 3, Yasuo Ohno 1
12 AlN/GaN HFET with Si surface control layer NICT 1, Fujitsu Laboratories Ltd. 2　*Norio Onojima 1, Nobumitsu Hirose 1, Takashi Mimura 1,2, and Toshiaki Matsui 1
△ 13 Mesa-gate AlGaN/GaN HEMTs having periodical narrow-width channels Graduate School of Information Science and Technology and RCIQE, Hokkaido Univ. 1　*Ohi Kota 1, Tamura Takahiro 1, Hashizume Tamotsu 1
△ 14 Effects of N2O plasma oxinitridation on electrical characteristics of AlGaN/GaN heterostructures Hokkaido Univ. 1, RCIQE 2　*Tajima Masafumi 1 2, Hashizume Tamotsu 1 2
△ 15 Gate Edge Oxidation Process for Reducing Gate Leakage Current in AlGaN/GaN HEMTs Fujitsu 1, Fujitsu Labs 2　*Ohki Toshihiro 1, Kanamura Masahito 1, Okamoto Naoya 1, Imanishi Kenji 1, Makiyama Kozo 1, Joshin Kazukiyo 1, Kikkawa Toshihide 1, Hara Naoki 2
16 Fabrication of AlGaN/GaN MIS-HEMT with Ta2O5 gate insulator Fujitsu Limited 1, Fujitsu Laboratories Ltd. 2　*Kanamura Masahito 12, Ohki Toshihiro 12, Makiyama Kozo 12, Okamoto Naoya 12, Imanishi Kenji 12, Kikkawa Toshihide 12, Hara Naoki 2, Joshin Kazukiyo 12
△ 17 Device simulation of HfO2/AlGaN/GaN MOSFET : effects of interface traps Nagoya Uni. 1, Nagoya Uni. VBL 2　*Hayashi Yoshihisa 1, Sugiura Shun 1, Kishimoto Shigeru 1,2, Mizutani Takashi 1
18 Temperature dependence of operation current on GaN MOSFETs The Furukawa Electric 1　*Yuki Niiyama 1, Hiroshi Kambayashi 1, Shinya Ootomo 1, Takehiko Nomura 1, Sadahiro kato 1
19 Epitaxial layer structure dependence of the two-dimensional electron gass concentration in AlGaN channel HEMTs Advd. Tech. R&D Ctr., Mitsubishi Electric Corp. 1, Ritsumeikan Univ. 2　*Takuma Nanjo 1, Misaichi Takeuchi 2, Muneyoshi Suita 1, Toshiyuki Oishi 1, Yuji Abe 1, Yasunori Tokuda 1, Kiichi Yoshiara 1, and Yoshinobu Aoyagi 2
20 Device characteristics in MOCVD-grown lattice-matched InAlN/GaN HEMTs NGK Insulators, Ltd. 1, Nagoya Institute of Technology 2　*Miyoshi Makoto 1, Selvaraj Josephine 2, Kuraoka Yoshitaka 1, Tanaka Mitsuhiro 1, Egawa Takashi 2
21 Effect of Buffer Layer Structure on Leakage Current and Current Collapse Phenomena in High-Voltage GaN-HEMTs Semiconductor Comp., Toshiba Corp. 1, Toshiba R&D Center 2　Saito Wataru 1, Takao Noda 1, Kuraguchi Masahiko 2, Takada Yoshiharu 2, Tsuda Kunio 2, Saito Yasunobu 1, Omura Ichiro 1, Yamaguchi Masakazu 1
22 Optical studies on current collapse phenomena caused by vertical electric fields on AlGaN/GaN HEMTs Semiconductor Company, Toshiba Corporation　1　Akira Yoshioka 1, Hidetoshi Fujimoto 1, Takao Noda 1, Wataru Saito 1, Yasunobu Saito 1, Toru Sugiyama 1
23 Direct evaluation of cross-sectional surface potential in cleaved GaN trench-gate MISFET by KFM Ritsumeikan Univ. 1, ROHM Co. Ltd. 2　*Kaneko Masamitsu 1, Fujishima Tatsuya 2, Chikamatsu Kentaro 2, Yamaguchi Atsushi 2, Kikawa Junjiroh 1, Otake Hirotaka 2, Nanishi Yasushi 1
14.5 Optoelectric Properties and Devices
Sept. 2 9:00～18:00
2a-S-　/ III
1 Preparation of SnS Films by Sulfurization and Fabrication of SnS-related Solar Cell (II) Tokyo Univ. of Science 1　*Nakagomi Katsuya 1,Mori Yuuichirou 1,Kawada naoki 1,Miyauchi Keisuke 1,Minemura Takehiro 1,Nakanishi Hisayuki 1,Sugiyama Mutsumi 1
△ 2 Fabrication of CuxSnyS thin film by Electrochemical deposition　method Nagoya Inst. of Tech. 1　*Nakashima Yuki 1,Kato Masashi 1,Ichimura Masaya 1
3 Study on sulfurization condition of Cu2ZnSnS2 thin films for solar cell application Wakayama Coll.Tech. 1, Wakayama Ind.Tech.Cen 2　Kazuya Maeda 1, Yamaguchi Toshiyuki 1, Niyama Shigetoshi 2, Imanishi Toshihito 2
△ 4 Electronic structure of photovoltaic semiconductor Cu2ZnSnSe4 by first-principles calculation Ryukoku Univ. 1　*Nakamura Satoshi 1, Maeda Tsuyoshi 1, Wada Takahiro 1
5 Radiation Degradation Modeling of InGaP/GaAs/Ge Triple Junction Solar Cells for Space Use 2 JAEA 1, UEC 2, JAXA 3　*Shin-ichiro Sato 1, Haruki Miyamoto 2, Mitsuru Imaizumi 3, Kazunori Shimazaki 3, Chiharu Morioka 3, Katsuyasu Kawano 2, Takeshi Ohshima 1
6 Preparation and Characterization of CuInTe2 thin-films for Solar Cells Aoyama Gakuin Univ.　*Takahiro Mise and Tokio Nakada
Break 10:30～10:45
7 Evaluation of electrical characteristics of Li-doepd TiO2 nanocrystalline thin film and its application to Dye-Sensitized Solar Cells Univ. of Electro-Commun. Dep. of Appl. Phys. 1,　Nada Masahiro ,1, Gonda Tomohiro ,1, Quen Shen ,1, Shimada Hiroshi ,1, Toyoda Taro ,1, Kobayashi Naoki ,1,
△ 8 Deposition of ZnSxO1-x thin films by the photochemical dip coating method Nagoya Inst. Of Tech. 1　*Akita Koichi 1,Kato Masashi 1, Ichimura Masaya 1
▲ 9 Electrochemical deposition of InSxOy using 2-step pulse voltage Nagoya inst. of Tech. 1　*Ichimura Masaya 1, hassan ashraf 1
▲ 10 Energy band diagram of a SnS/InSxOy revealed using the XPS technique Nagoya inst. of Tech. 1　*Ichimura Masaya 1, hassan ashraf 1
▲ 11 Electrochemical Deposition of Gallium Sulfide Oxide Thin Films Nagoya Inst. of tech. 1　*Ichimura Masaya 1, Chowdhury Supria 1
▲ 12 Preparation and characterization of Electrodeposited Cuprous Oxide(Cu2O)films using 2-step pulse voltage Nagoya .Inst of .Tech　*Ichimura Masaya 1, M.Mohamed Refaat 1
Lunch 12:15～13:15
2p-S-　/ III
1 JJAP Paper Award: Quantum Dot Activated All-inorganic Electroluminescent Device Fabricated Using Solution-Synthesized CdSe/ZnS Nanocrystals HOYA Corporation　Satoshi Kobayashi, Yuki Tani, and Hiroshi Kawazoe
2 Characterization of CaGa2S4:Eu single crystal by comparison of PL excitation, photoacoustic and absorption spectra Takuma Nat.Col.Tech. 1, Nagaoka Univ.Tech. 2, Shizuoka Inst.Sci.Tech. 3, Nihon Univ. 4　Masakazu YAGI 1, Ariyuki KATO 2, Minoru DOHI 3, Chiharu HIDAKA 4, Takeo TAKIZAWA 4, Seishi IIDA 3
3 Improvement in PL excitation characteristics by Ag doping
in CuAlS2:Mn red phosphor for white LED
 Graduate School of Engineering, Tottori Univ. 1,TEDREC,Tottori Univ. 2　Ohashi Kazuhito 1, Miyamoto Yoshinobu 2, Ohmi Koutoku 1
4 Transient characteristics of red luminescence in Si codoped CuAlS2:Mn phosphor Erectronic Display Recerch Center,Tottori Univ. 1,Graduate School of Engineering,Tottori Univ. 2　*Miyamoto Yoshinobu 1,Ohashi Kazuhito 2,Ohmi Koutoku 2
5 Nanosecond Spectroscopy of Ce-doped CaGa2S4 Crystal III Nagaoka Univ. 1, Nihon Univ. 2　*Sorimachi Hiroshi 1, Uchida Takafumi 1, Tanaka Kunihiko 1, Uchiki Hisao 1, Hidaka Chiharu 2, Takizawa Takeo 2
6 Optical properties of newly found layered oxysulfide (Cu2S2)(Sr3Sc2O5) Univ. Tokyo 1, ILE Osaka Univ. 2　Ogino Hiraku 1, Nakazato Tomoharu 2, Sarukura Nobuhiko 2, Katsura Yukari 1, Junichi Shimoyama 1, Kohji Kishio 1
7 Evaluation of La2O2S:Eu red emitting phosphor synthesized by citric acid gel method - Dependence on firing temperature - Res.Inst. of Electron., Shizuoka Univ. 1, Mitsubishi Chemical Group Science and Technology Research Center, Inc. 2　*Yamashita Shinji 1, Kominami Hiroko 1, Nakanishi Yoichiro 1, Hara Kazuhiko 1, Shimomura Yasuo 2, Yoshino Masahiko 2
8 Electronic Structure Calculation of Eu-doped Alikaline-Earth Sulfides in Ground and Excited States Grad. School Eng., Tohoku Univ. 1,NICHe, Tohoku Univ. 2
　Hiroaki Onuma 1,Ai Suzuki 2,Riadh Sahnoun 1, Michihisa Koyama 1,Hideyuki Tsuboi 1,Nozomu Hatakeyama 1,Akira Endou 1,Hiromitsu Takaba 1,Carlos A. Del Carpio 1,Momoji Kubo 1,Akira Miyamoto 1,2
9 Improvement of sulfur content and emission properties for ZnS co-doped BaAl2S4:Eu thin films School of Sci. and Tech. Meiji University 1　*Isomura Ryosuke 1, Kisi Nobutosi 1, Miura Noboru 1, Matsumoto Hironaga 1, Nakano Ryotaro 1
Break 15:45～16:00
△ 10 Electroluminescence from silicon nanocrystals using nitradation on substrate QNERC, Tokyo Tech 1, Southampton Univ. and Tokyo Tech 2, SORST-JST 3　* Hea-jeong Cheong 1, Kouichi Usami 1, Ken Uchida 1, Yoshishige Tsuchiya 2,3, Hiroshi Mizuta 2,3, Shunri Oda 1,3
11 Improvement of emission properties for Fluorine-doped BaAl2S4:Eu blue-emitting phosphors School of Sci. and Tech., Meiji University　*Guo RunHong 1, Miura Noboru 1, Matsumoto Hironaga 1, Nakano Ryotaro 1
12 Enhancing effect of REE on the red emission of (Sr,Ca)Ga2S4:Mn Nihon Univ. 1　*Obonai Toshimitsu 1,Hidaka Chiharu 1,Takizawa Takeo 1
13 Red-emitting (Ba1-xSrx)2ZnS3:Mn thin film electroluminescence devices Tottori Univ.1　*Sasaki Taichi 1, Kotani Tsuyoshi 1, Ohmi Koutoku 1
14 Bendable see-through inorganic TFEL devices fabricated on thin sapphire substrate Kanazawa Inst. of Tech. 1　*Sahara Keiichi 1, Matsui Syun 1, Fukada Haruki 1, Miyata Toshihiro 1, Minami Tadatsugu 1
15 Blue-emitting La2O3:Bi thin film electroluminescent devices fabricated with a ceramic sheet insulating layer Kanazawa Inst. of Tech.　*Ueda Kouhei 1, Matsui Syun 1, Fukada Haruki 1, Miyata Toshihiro 1, Minami Tadatsugu 1
16 ZnS:Cu,Cl DC-drive EL devices based on organic / inorganic hybrid structure School of Sci. and Tech., Meiji University　*Su Jie 1, Miura Noboru 1, Matsumoto Hironaga 1, Nakano Ryotaro 1
17 Dispersed-type inorganic electroluminescent device on printed conductive polymer electrode Tokyo polytechnic Univ.　*Homma Takeshi. Satoh Toshifumi
14.5 Optoelectric Properties and Devices
Sept. 2 9:30～15:30
2a-T-　/ III
1 Cd-free Flexible CIGS Thin Film Solar Cells II Aoyamagakuin Univ. 1　*Yagioka Takeshi 1,Mise Takahiro 1,Nakada Tokio 1
2 Low Temperature Growth of CIGS Thin Films by LAD process Aoyamagakuin Univ.　*Hirata Junya 1,Mise Takahiro 1,Nakada Tokio 1
3 Characterization of CIGS solar cell by photoluminescence method Ehime Univ.　1, Aoyama Gakuin Univ.　2 　*Katsuhiko Ohkubo 1,Tatsushi Morisada 1, Akira Miyata 1, Shyo Shirakata 1, Tokio Nakada 2
4 Characterization of Cu(In,Ga)Se2 solar cell using the two dimensional LBIC-PL mapping system Ehime Univ. 1,Aoyama Univ. 2　Morisada Tatsushi 1,Ookubo Katsuhiko 1,Miyoshi Kousuke 1,Akira Miyata 1,Sirakata Shou 1,Nakada Tokio 2
Break 10:30～10:45
5 Preparation and Characterization of ZnS Thin films for the Buffer Layer of CIGS Solar Cells prepared by CBD technique(V) Tokyo Univ. of Science 1　*Iwashita Taisuke 1,Ando Shizutoshi 1
6 Development of CIGS solar cell with thinner Mo back contact AIST　1, Tokyo Univ. of Science　2　　* Yukiko Kamikawa-Shimizu 1, Shuuhei Shimada 2, Akimasa Yamada 1, Keiichiro Sakurai 1, Shogo Ishizuka 1, Hironori Komaki 1, Koji Matsubara 1, Hajime Shibata 1, Hitoshi Tampo 1, Keigou Maejima 1, and Shigeru Niki 1
7 Preparation of CuInS2 films by sputtering Cu and In targets alternately under Ar-diluted CS2 gas atmosphere Grad. School of Sci. and Tech. Niigata Univ. 1, Fac. of Eng. Niigata Univ. 2, Cen. for Trans. Research. Niigata Univ. 3, Nagaoka Nat. Coll. of Tech. 4　*Yamaguchi Takuya 1, Moriya Tomohiro 1, Hideho Fujita 2, Nozomu Tsuboi 1-3, Koichiro Oishi 4, Satoshi Kobayashi 2, Futao Kaneko 1-3
▲ 8 Effect of Se Beam pressure on CIGS Solar Cell performance The University of Tsukuba 1, National Institute of Advanced Industrial Science and Technology (AIST) 2,　*M.M.Islam1, T. Sakurai1 , S. Ishizuka2, A. Yamada2, K. Sakurai2, K. Matsubara2, S. Niki2, K. Akimoto1
9 Preparation of Cu(In,Ga)Se2 thin films by vapor deposition from ternary compounds(V) Wakayama Coll.Tech. 1, Wakayama Ind.Tech.Cen. 2　*Yamaguchi Toshiyuki 1, Asai Yasutaka 1, Yufune Kouji 1, Niiyama Shigetoshi 2, Imanishi Toshito 2
Lunch 12:00～13:30
2p-T-　/ III
1 Development of isolation process for CuIn1-xGaxSe2 image sensors. Rohm Ltd.1, AIST2,　 K. Miyazaki1, O. Matsushima1, M. Moriwake1, H. Takasu1, S. Ishizuka2, K. Sakurai2, A. Yamada2, and S. Niki2.
2 Proton-Induced Defects in Cu(In,Ga)Se2 Thin-Film Solar Cells JAXA 1, JAEA 2, AIST 3　*Kawakita Shirou 1, Imaizumi Mitsuru 1, Kibe Koichi 1, Ohshima Takeshi 2, Ishizuka Shogo 3, Sakurai Keiichiro 3, Niki Shigeru 3
3 Study on Radiation Degradation of Triple-Junction Solar Cells under Low Temperature and Low Light Intensity JAXA 1,JAEA 2,JPL 3, NRL 4　*Imaizumi Mitsuru 1,Ohshima Takeshi 2,Richard Harris 3,Robert Walters 4
4 Effect of Test Conditions on Radiation Degradation of Space Solar Cells AES 1,JAXA 2,JAEA 3,WERC 4　Saito Masashi 1,Imaizumi Mitsuru 2,Ohshima Takeshi 3,Ito Yoshifumi 4
Break 14:30～14:45
5 Characterization of Sub-cells in a Triple Junction Solar Cell Using LED Bias Lights AES 1,JAXA 2,SOMA OPTICS 3　Takeda Yasuo 1,Saito Masashi 1,*Imaizumi Mitsuru 2, Okura Tsutomu 3
6 Investigation of the flexible substrate suitable for Cu(Al,In,Ga)Se2 Tokyo Univ. of Science 1, IMRAM, Tohoku Univ 2　*Sato Tomoaki 1, Yasuniwa Toshihoro 1, Umezawa Akihisa 1, Nakanishi Hisayuki 1, Chichibu Shigefusa 2, Sugiyama Mutsumi 1
7 Growth of Cu(In,Al)Se2 thin films by selenization using diethylselenide(II) Tokyo Univ. of Science 1,IMRAM Tohoku Univ. 2　*Chika Fujiwara 1,Akihisa Umezawa 1,Hisayuki Nakanishi 1,Mutsumi Sugiyama 1,Sigefusa Chichibu 2
14.5 Optoelectric Properties and Devices
Sept. 3 9:30～18:45
3a-S-　/ III
1 Boron-doped a-Si:H back-surface-field layers for multicrystalline silicon solar cells AIST　Isao Sakata1, Mitsuyuki Yamanaka1, Hidetaka Takato1, Zhengxin Liu1, Hitoshi Kawanami1
2 Sutady on silicon oxide anti-reflection films for silicon solar cells Seikei Univ. 1　Kohata Hayato 1, Narita Shohei 1, Okada Nao 1, Sato Kimiya 1, Monma Tadashi 1, Saito Yoji 1
△ 3 Optimization of a-Al1-xOx:H passivation films for Si solar cells Tokyo Tech.　*Irikawa Junpei 1,Miyajima Shinsuke 1,Yamada Akira 1, Konagai Makoto 1
4 Deposition and Evaluation of SiNx:H Films by RPECVD Method Tokyo University of Agri. & Tech. 1　*Y. Suzuki, M. Dhamrin, M. Suda and K. Kamisako
5 Effect of spin coating speed on the sheet resistance of mc-Si wafers for solar cell application Tokyo Univ. of Agri. & Tech.　*Ban Naoki 1, Goh Ling Wei 1, Supajariyawichai Piyasak 1, Uzum Abdullah 1, Ben Jaballah Abdelkader 1, Dhamrin Marwan 1, Kamisako Koichi 1
6 Investigation of Validity of Minority Carrier Lifetime Measurements by Photo-assisted KFM
 IIS, Univ. of Tokyo 1, INQIE, Univ. of Tokyo 2　*Takihara Masaki 1, Takahashi Takuji 1,2
Break 11:00～11:15
▲ 7 Non-contact Silicon Ingot Cut by Electrochemical Anodization Graduate School of Eng., Tokyo Univ. of Agri. & Technol 1, Quantum14 Corp. 2　*MENTEK Romain 1, TSUBATA Shuichi 1, MASUNAGA Masahiro 1, GELLOZ Bernard 1,2, KANEHORI Keiichi 2, WARABISAKO Terunori 2, YAMADA Kouji 2, SHIMADA Toshikazu 2, and KOSHIDA Nobuyoshi 1,2
8 Improving the quality of spherical Si by remelting AIST　Zhengxin Liu 1, Atsushi Masuda 1, Michio Kondo 1
9 HIGH-EFFICIENCY MC-SI SOLAR CELLS USING DENDRITIC CASTING METHOD SHARP Corp. 1,Tohoku Univ. 2,　*Okamoto Satoshi 1,Ozaki Ryoh 1,Ooka Sachiyo 1,Takaba Yoshiroh 1,
Fujiwara Kozo 2,Nakajima Kazuo 2,Konishi Takao 1
10 Photoluminescence of Microwave-Synthesized AgGaSe2 Polycrystals Osaka Pref. College of Technology　Susaki Masami
11 Optical properties of semiconductor AgInSe2 Gunma Univ. 1　*Koitabashi Keisuke 1,Ozaki Syunji 1,Adachi Sadao 1
12 Temperature dependence of the dielectric function of quasi one-dimensional TlInSe2 Osaka Pref. Univ. 1, Chiba Tech. Univ. 2, Azerbaijan National Academy of Sciences 3　*Aoh Hitoshi 1, Shim YongGu 1, Wakita Kazuki 2, Mamedov Nazim 3
13 Striped pattern of probe reflection from chain-structural Tl-
compounds		 Osaka Prefecture Univ. 1, Chiba Inst. Tech. 2, Azerbaijan National Academy of Sciences 3　*Kishigui Kaoru 1, Ogushi Naoki 1, Shim Yonggu 1, Wakita Kazuki 2, Mamedov Nazim 3
Lunch 13:00～14:00
3p-S-　/ III
1 Anomalous temperature dependence of the bandgap energy in semiconductor Cu2GeSe3 Gunma Univ.1　*Isono Hiroki 1,Ozaki Syunji 1,Adachi Sadao 1
2 Optical properties of chalcopyrite AgInS2 nanoparticles prepared by thermal decomposition of metal complexes Nagoya Inst. Tech. 1, Muroran Inst. Tech. 2　*Ogawa Tetsuya 1, Kuzuya Toshihiro 2, Hamanaka Yasushi 1, Sumiyama Kenji 1
3 Structural Control and Fluorescence of Cu-In-S Nanocrystals AIST 1, Kyushu Univ. 2, CREST 3　Masato Uehara 1, Kosuke Watanabe 2, Yasuyuki Tajiri 2, Hiroyuki Nakamura 1, Hideaki Maeda 1,2,3
△ 4 Dephasing studies on exciton fine structure in a cleavage plane of wurtzite GaN Hokkaido Univ. 1,2　Ishiguro Tetsuro 1,2, Toda Yasunori 1,2, Adachi Satoru 1
5 Observation of GaN exciton dynamics by utilizing a transient grating spectroscopy
 Department of Applied Physics1 ,　Division of Innovative Research (CRIS) 2　 Hokkaido Univ.　*Murakami Ryo 1,2, Toda Yasunori 1,2, Ishiguro Tetsuro 1,2, Adachi Satoru 1
6 Investigation of 2DEG in AlGaN/GaN interface by using a surface photo-voltage and a piezoelectirc photo-thermal techiques Univ. of Miyazaki 1, CRC Univ. of Miyazaki 2　*A. Fukuyama 1, T. Touse 1, K. Sakai 2, T. Ikari 1
7 Characterization of Eu-doped GaN films on c-plane sapphire substrate by RF magnetron sputtering Ehime Univ. 1　*Fujii Takanobu 1,Miyake Shoudai 1, Yamanaka Takahiro 1,Yudate Shinji 1, Miyata Akira 1, Shirakata Sho 1
8 Eu-doped GaN films grown on c-plane of sapphaire and GaAS substrates by RF magnetron sputtering Ehime Univ. 1　Yudate Shinji 1, Fujii Takanobu 1, Miyata Akira 1, Shirakata Sho 1
9 Study on Structural and Optical Properties of Tb-implanted AlxGa1-xN Toyohashi Univ. Tech. 1, KIST 2　*Ji-Ho Park 1, Akihoro Wakahara 1, Yuzo Furukawa 1, Hiroshi Okada 1, Jong-Han Lee 2
Break 16:15～16:30
10 Crystalline and Photoluminescent Properties of Er and Yb doped AlN thin film Meiji Univ. 1　*Tomokuni Yusuke 1, Ohno Takahiko 1, Uekusa Shin-ichirou 1
11 Development of narrow-band deep-ultraviolet emission devices using Gd doped AlN Kobe Univ. 1,YUMEX INC. 2,NAIST 3,Nisshin Kogyo 4　Kitayama Shinya 1,Kawamura Masashi 1,Tanaka Yuusuke 1,Kita Takashi 1,
Wada Osamu 1,Chigi Yoshitaka 2,Kasai Yoshihiro 2,Nishimoto Tetsurou 2,
Tanaka Hiroyuki2,Kobayashi mikihiro 2,Yanagi Hisao 3,Magario Akira 4,
Noguchi Tooru 4,
12 ESR study of photoluminescent material GaAs: Er,O -Er concentration effect- Kobe Univ. 1, Osaka Univ. 2　Masashi Fujisawa 1,Atsushi Asakura 1, Elmasry Fatma 1, Susumu Okubo 1, Hitoshi Ohta1, and Yasufumi Fujiwara 2
13 Emission of THz field by photoconductive antenna fabricated on Er,O-codoped GaAs Osaka Univ. 12　*Kazuya Shimada 1, Yoshikazu Terai 1, Kei Fujii 1, Iwao Kawayama 2, Masayoshi Tonouchi 2, Yasufumi Fujiwara 1
14 Luminescence properties of InGaAs/GaAs:Er,O/GaInP double quantum well laser diodes grown by OMVPE Osaka Univ. 1　*Ota Yuji 1, Ito Yoshiaki 1, Kawasaki Takashi 1, Noguchi Kohta 1, Tsuji Takahiro 1, Terai Yoshikazu 1, Fujiwara Yasufumi 1
15 Below-Gap Levels in InGaAs High-Electron-Mobility Transistors Observed by Two-Wavelength Excited Photoluminescence Saitama Univ. 1, Sumitomo Chemical 2, AIST 3　Yamaguchi Tomohiko 1, Okamoto Atsushi 1, Fukuda Takeshi 1, Takada Tomoyuki 2, Itatani Taro 3 , Kamata Norihiko 1
16 Internal quantum efficiency of InGaN-based single quantum wells Yamaguchi Univ. 1 ,Mitsubishi Cable Ind. 2　*Kuronaka Takahiro 1, Sudo Yasuhiro 1, Umezawa Kyohei 1, Shibano Ryota 1, Yamada Yoichi 1, Taguchi Tsunemasa 1, Kudo Hiromitsu 2, Okagawa Hiroaki 2
17 Dual chopped photoreflectance spectroscopy for nondestructive characterization of semiconductor materials Graduate School of Engineering, Kobe Univ.　*Y.Ogino 1, T.Kita 1, O.Wada 1
18 Preparation and characterization of cation-doped GaN crystals by nitridation of Ga2O3　by NH3 Hokkaido Univ. 1, NIMS 2, Horiba, Ltd. 3　*Otani Hiroki 1, Shimada Shiro 1, Sekiguti Takashi 2, Yokoyama Masaaki 3
14.5 Optoelectric Properties and Devices
Sept. 4 9:00～17:30
4a-S-　/ III
1 Luminescence from Si dots in Si-rich Nitride – Annealing dependence–- Res. Inst. for Nanodevice and Bio Systems, Hiroshima Univ.　*Hirotaka Shigemoto 1, Yoshiteru Amemiya 1, Shin Yokoyama 1
2 Photo Luminescene from a-SiNH nanoball film fabricated in N2 gas Plasma after Nitriding Process Science and Engineering, Waseda Univ. 1　*Yoshida Shingo 1,Yoshida Tatsuki 1,Sakamoto Hajime 1,Isamu Kato 1
3 Color variation of white photoluminescence from carbon incorporated silicon oxide JFCC 1, Nagoya Inst. 2,Lashkaryov Inst. Semicon.Phys. 3, Turku Univ. 4, Nagoya Univ.5 　Ishikawa Yukari 1,2, Vasin A. 3,Salonen J. 4, Muto S. 5,Shibata N. 1, Lysenko V. 3, Nazarov A.3, Lehto V-P.4
△ 4 Study on Luminescence Characteristics from Ultra-Thin 3C-SiC layer Kyusyu inst. Tech. 1　Matsuishi Tomoya 1, Ejima Mitsuaki 1, Tanehira Takafumi 1, Nakano Takahiro 1, Nakao Motoi 1
5 Growth and optical properties of SiOx nanowires using a vapor transport method Gunma Univ. 1　*hayashi masahiro 1,ozaki syunji 1,adachi sadao 1
Break 10:15～10:30
6 Room temperature photoluminescence from ultrathin-body impurity-doped silicon (I) Corporate R&D Center, Toshiba Corporation　Yamamoto Kazushige 1, Schimizu Tatsuo 1
7 Room temperature photoluminescence from ultrathin-body impurity-doped silicon (II) Corporate R&D Center, Toshiba Corporation　Yamamoto Kazushige 1, Schimizu Tatsuo 1
8 Single-pass optical gain of dislocation-related emission line D12 in Si Graduate School of Arts and Sciences, Unive. of Tokyo　*J. Igarashi, K. Kawamoto and S. Fukatsu
▲ 9 Activation of blue emission in nanocrystalline porous silicon by high-pressure water vapor annealing Tokyo Univ. Agriculture&Technology　Gelloz Bernard 1, Koshida Nobuyoshi 1
10 Properties of light-emitting porous silicon formed by stain etching in HF/KIO3 solution under light illumination Graduate School of Engineering, Gunma Univ., 1　*Yankai Xu 1, Sadao Adachi 1
11 PL spectrum analysis of anodic porous silicon Gunma Univ. 1　*Tamura Tomoyuki 1,Aznur Aisyah Binti Abdullah 2,Adachi Sadao 3
12 The effects of thermal annealing oxidation on the luminescent properties of porous silicon powder Gunma Univ. 1　Nakamura Toshihiro 1, Ogawa Tatsuya 1, Hosoya Naoki 1, Adachi Sadao 1
Lunch 12:15～13:15
4p-S-　/ III
1 Development of three-dimensional display based on two-step upconversion Dai Nippon Printing 1, Tokyo Univ. of Sci. 2　*Daisuke Matsuura 1, Masaki Kutsukake 1, Katsuya Tsujiuchi 2, Kohei Soga 2
2 The luminescence spectra of Yb3+, Nd3+ co-doped Bi2O3-based glass phospor ―Effects of sample thickness― Nagoya Univ. 1　Sakano Ayako 1, Mizutani Ryota 1, Fuchi Shingo 1, Takeda Yoshikazu 1
3 Magnesium diffusion process on synthesis of Sr-Al-O:Eu2+ blue phosphor with MgO single crystal substrate Nagaoka Univ. Tech 1,Chubu Chelest Co.,Ltd.2　*Komatsu Keiji 1,Nakamura Atsushi 2,Nambu Nobuyoshi 1,2,Ohshio Shigeo 1,Akasaka Hiroki 1,Saitoh Hidetoshi 1
4 Crystal structure and local structure analysis of (Ba,Sr)3MgSi2O8：Eu2+,Mn2+ phosphor Kyocera corp 1, 　*Kato Wataru 1,Koshitani Naoki 1, Fukudome Masato 1,
5 Alkali-earth ortho-silicate phosphors co-activated Eu and Tb elements Toshiba Corp. Corp. R&D Center　*Ryosuke Hiramatsu 1, Yumi Fukuda 1, Naotoshi Matsuda 1, Hironori Asai 1
6 Preparation and Luminescent Characteristics of Ba4Gd6Si6O24F2:Tb Green PDP Phosphors Tottori Univ. 1,Tokushima Bunri Univ. 2　*Kobayashi Atsushi 1,Kunimoto Takashi 2, Ohmi Koutoku 1
7 Red luminescence in praseodymium-doped titanate perovskite epitaxial thin films (II) AIST 1, KIT 2, Gakushuin Univ. 3, Meiji Univ. 4, TIT 5 　*Hiroshi Takashima 1, Kazushige Ueda 2, Yoshiyuki Inaguma 3, Noboru Miura 4, Mitsuru Itoh 5
Break 15:00～15:15
△ 8 An increase in excitation efficiency of Er3+-related 1.53μm emission from Er2SiO5 crystalline embedded in SRSO. Univ. Electro Communications Kimura-Isshiki Lab.　*Masaki Oe, Yu Fujiwara, Hideo Isshiki, Tadamasa Kimura
9 Characterization of ErSiO crystalline film formed on SiO2 substrates Univ. of Electro-Communications　1　*Takayuki Nakajima 1, Masaki Oe 1, Hideo Isshiki 1,Tadamasa Kimura 1
▲ 10 Structural and photoluminescence comparison of Er2SiO5 and Er2O3 prepared by sol-gel method Univ. of Electro-Communications 1　*X. J. Wang 1, T. Nakajima 1, M. Ohe 1, H. Isshiki 1, T. Kimura 1
11 Effect of Conductivity for ZnO Blue Phosphor Doped MgO Heavily Mie Industrial Research Inst. 1, Nagoya Inst. of Tech. 2　*Koji Inoue 1, Shiro Kawasumi 2, Shinobu Hashimoto 2, Sawao Honda 2, Yuji Iwamoto 2
12 Liquid phase synthesis of ZnCdO powder for preparation of multi-layered ZnO/ZnCdO particles. Res.Inst. of Electron., Shizuoka Univ.　*Sano Tomoharu 1, Koketsu Naoyuki 1, Kominami Hiroko 1, Nakanishi Yoichiro 1, Hara Kazuhiko 1
13 Luminescent properties of ZnO nanocrystals prepared by sol-gel method Graduate School of Eng. Sci., Osaka univ. 1　*Takeuchi Hisazami 1, Yamaguchi Daisaku 1, Toyama Kazuhiko 1, Okamoto Hiroaki 1
14 Growth and optical properties of ZnGa2O4 nanowires using a vapor growth method Gunma Univ. 1　*Tsunoda Kotaro 1,Ozaki Syunji 1,Adachi Sadao 1
15 Optical properties of Al-doped ZnO nanowires synthesized by a pulsed-laser deposition Miyazaki Univ. 1, Kyusyu Univ. 2　*Noguchi Kohei 1, Sakai Kentaro 1, Fukuyama Atsuhiko 1, Ikari Tetsuo 1, Okada Tatsuo 2
16 Preparation and assessment of CaF2:Eu,Ce powder made by sol-gel method The Electro-Communications　*Hiroyuki Iizuka,Katsuyasu Kawano
14.5 Optoelectric Properties and Devices
Sept. 5 9:00～15:00
5a-S-　/ III
1 Control of Photoluminescence from Mn2+ in Phosphate by Optimization of Codopants Fukui National College of Technology 1　*Mamoru Kitaura 1, Toshio Yamazaki 1
2 Improvement of Photoluminescence Properties using Co-doping Effect in YPO4:Mn2+ Univ. Fukui 1,Fukui NCT 2　*Inada Yo'hei 1,Kitaura Mamoru 2,Fukui Kazutoshi 1
3 Crystal structure and photoluminescence properties of Sn or Ti layered perovskite oxide phosphors Kyushu Institute of Technology 1　Hidaka Koichi 1, Nakayashiki Kensuke 1, Ueda Kazushige 1
4 Preparation of stannate phosphors with perovskite-related structures by polymerized complex method Kyushu Inst. Tech. 1, Kochi Natl. Coll. Tech. 2　*Nakamura Taisuke 1, Yasukawa Masahiro 2, Ueda Kazushige 1
5 Synthesis of phosphor materials by microwave heating method Niigata Univ.　*Toda Kenji, Toda Ayano, Uematsu Kazuyoshi, Ishigaki Tadashi, Sato Mineo
6 Synthesis of silicate phosphors for a white LED Niigata Univ.　*Toda Kenji, Seki Satomi, Uematsu Kazuyoshi, Ishigaki Tdashi, Sato Mineo
Break 10:30～10:45
7 Increasing of blue emission for Sr-Al-O:Eu2+ phosphors by redaction. Nagaoka Univ. Tech. 1,Chubu Chelest Co., Ltd. 2　*Shinya Tsuchida 1,Atsushi Nakamura 2,Shigeo Ohshio 1,Nobuyoshi Nambu 1,2,Hiroki Akasaka 1,Hidetoshi Saitoh 1
8 Observation of luminescence properties at low temperature on Sr-Al-O:Eu2+ phosphor with Al2O3 particles Nagaoka Univ. Tech. 1, Chubu Chelest Co., Ltd. 2　*Maruyama Hayato 1, Nakamura Atsushi 2, Ohshio Shigeo 1, Akasaka Hiroki 1, Nambu Nobuyoshi 1,2, Saitoh Hidetoshi 1
9 Rietveld refinement of BaMgAl10O17 Niigata Univ.　*Toda Kenji, Hatsumori Tomoki, Uematsu Kazuyoshi, Ishigaki Tadashi, Sato Mineo
10 Valence estimation of Eu ions in the surface of BaMgAl10O17:Eu phosphor powder JASRI 1, School of Eng. Tokushima Bunri Univ. 2, ADSM Hiroshima　Univ. 3, Dept. Electrical and Electronic Eng. Tottori Univ. 4　Honma Tetsuo 1, Hiragi Tatsuya 2, Kunimoto Takashi 2, Tanno Hiroaki 3, Kajiyama Hiroshi 3, Kobayashi Atsushi 4, Orita Shinya 4, Ohmi Koutoku 4
11 A Quantum Chemistry Study on Excited Energy Transfer Pathway in Eu2+-Activated Hexagonal Aluminates Grad. School Eng., Tohoku Univ. 1, Grad. School Adv. Sci. Matter, Hiroshima Univ. 2, NICHe, Tohoku Univ. 3　Hiroaki Onuma 1,Hiroaki Tanno 2,Itaru Yamashita 1,Kazumi Serizawa 1,Ai Suzuki 3,Riadh Sahnoun 1,Michihisa Koyama 1,Hideyuki Tsuboi 1,Nozomu Hatakeyama 1,Akira Endou 1,Hiromitsu Takaba 1,Carlos A. Del Carpio 1, Momoji Kubo 1, Hiroshi Kajiyama 1, Akira Miyamoto 1,3
△ 12 Development of Atomistic Scale Structure Analysis by Analytical Apparatus Simulatars and Applications to Optoelectronic Materials Grad. School Eng., Tohoku Univ. 1,
Grad. School Adv. Sci. Matter, Hiroshima Univ. 2,
NICHe, Tohoku Univ. 3
　Itaru Yamashita 1, Kazumi Serizawa 1, Hiroaki Onuma 1, Hiroaki Tanno 2,
Ai Suzuki 3,Riadh Sahnoun 1, Michihisa Koyama 1, Hideyuki Tsuboi 1, Nozomu Hatakeyama 1,
Akira Endou 1, Hiromitsu Takaba 1, Carlos A. Del Carpio 1, Momoji Kubo 1,
Hiroshi Kajiyama 2, Akira Miyamoto 1, 3
13 A modified Kubelka-Munk theory for spectral simulation of white LEDs Corporate R&D Center, Toshiba Corporation 1　Kunio Ishida 1, Iwao Mitsuishi 1, Yasushi Hattori 1 , and Shinya Nunoue 1
Lunch 12:30～13:30
5p-S-　/ III
△ 1 High luminous white light-emitting devices used Laser Diode Toshiba Corp. R&D Center 1,　Yasushi Hattori 1, Shinji Saito 1, Shin-ya Nunoue 1
2 Luminescence properties of Eu2+-doped green-emitting Sr-sialon phosphors Toshiba Corp. Corporate R&D Center 1　*Fukuda Yumi 1, Ryosuke Hiramatsu 1, Naotoshi Matsuda 1
▲ 3 Red Emitting Ca1-xLixAl1-xSi1+xN3:Eu2+ Phosphor: Crystal, Electronic Structures and Luminescence Properties NIMS　*Y.Q. Li, N. Hirosaki, R.J. Xie, T. Takeda and M. Mitomo
▲ 4 Green oxynitride phosphors excited by near-ultraviolet light Natl. Inst. Mater. Sci.　Rong-Jun Xie, Naoto Hirosaki, Takashi Takeda
5 Luminescence Properties of Sr-α-SiAlON phosphors SHOWA DENKO K.K.1,NIMS2　Kousuke Shioi1, Naoto Hirosaki2,Rong-Jun Xie2, Takashi Takeda2
6 Luminescent center position in β-sialon phosphor NIMS　Takeda Takashi 1, Hirosaki Naoto 1, Xie Rong-Jun 1