Joint Session |
| Joint Session D: Fundamental
Science of Plasma CVD and Its Application |
| March 27 13:00`17:45 |
| 27p-M-@/ I,II |
| | 1 | Synthesis of Κc-Si thin films from SiH2Cl2 and SiHCl3 utilizing the low-pressure high-density microwave plasma | Saitama Univ. 1,Saitama Univ. 2,RIKEN 3@Ohse Naoyuki 1,Saha Jhantu Kumar 1,Hamada Kazu 2,Kobayasi Tomohiro 3,Shirai Hajime 2 |
| £ | 2 | Fabrication of Si thin films from chlorinated materials utilizing the high-pressure microwave plasma | Saitama Univ. 1,Saitama Univ. 2,RIKEN 3@Saha Jhantu Kumar 1,Ohse Naoyuki 1,Hamada Kazu 2,Kobayasi Tomohiro 3,Shirai Hajime 1.2 |
| | 3 | Deposition of Microcrystalline Silicon Thin Films by Surface Wave Plasma Excited by Parallel Waveguides | Nagoya Univ. 1, Plasma Nano 2,@*Takanobu Hayashi 1, Yudai Takanishi 1, Takafumi Okayasu 1, Hirotaka Toyoda 2, Hideo Sugai 1,2 |
| | 4 | High Rate Growth of Highly Crystallized Ge Thin Films at Low Temperature from VHF Inductively-Coupled Plasma of GeH4 | Grad. School of AdSM, Hiroshima Univ.,@*T.Sakata, K.Makihara, S.Higashi and S.Miyazaki |
| | 5 | Substrate Dependence of High-rate Growth of Crystalline Ge Films at Low Temperature from VHF Inductively-Coupled Plasma of GeH4 | Grad. School of Advanced Science of Matter, Hiroshima Univ.1, Faculty of Engi., Hiroshima Kokusai Gakuin Univ.2@T.Sakata, *H.Deki, K.Makihara, S.Higashi and S.Miyazaki |
| | 6 | Nucleation Control in the Initial Stage of Microcrystalline Silicon(Κc-Si:H) Film Growth using Hydrogen Plasma Pretreatment | Hiroshima Univ@*Karakawa Takayuki, Higashi Seiichiro, Murakami Hideki, Miyazaki Seiishi |
| £’ | 7 | Evaluation of amount of clusters incorporated into a-Si:H films deposited by using multi-hollow plasma CVD method | Kyushu Univ. 1@*Nakamura Makoto@William 1, Shimokawa Daisuke 1, Koga Kazunori 1, Shiratani Masaharu 1 |
| ’ | 8 | The influence of rare gas dilution on Si deposition by Atmospheric Pressure plasma Enhanced Chemical Transport | Osaka Univ. 1@*Kamada Daiki 1,Kishimoto Kazuya 1,Ohmi Hiromasa 1,Kakiuchi Hiroaki 1,Yasutake Kiyoshi 1 |
| | 9 | High-rate deposition and characterization of microcrystalline silicon films by atmospheric pressure plasma chemical vapor deposition | Osaka Univ.@*Inuzuka Ryohei 1,Kuwahara Yasuhito 1,Ohmi Hiromasa 1,Kakiuchi Hiroaki 1,Yasutake Kiyoshi 1 |
| | | Break 15:15`15:30 | |
| £ | 10 | Direct deposition of poly-Si film with large grains over 10@micrometer at an ultrfast deposition rate of 1000 nm/s | RCPV AIST 1, The Furukawa Electric Co. Ltd 2, TIT 3@*Jia Haijun@1, Kuraseko Hiroshi 2,3, Kondo Michio 1,3 |
| ’ | 11 | Molecular dynamics simulation of surface di usion of an adsorbed Si atom on a hydrogenated Si crystal surface. | Osaka Univ. 1@*Matsukuma Masaaki 1, Hamaguchi Satoshi 1 |
| ’ | 12 | Effects of B/N compositions on the electric conduction of Zn-doped cubic boron nitride thin films | The Univ. of Tokyo@*Nose Kenji 1, Yoshida Toyonobu 1 |
| ’ | 13 | Growth control of sp3-bonded 5H-BN microcone electron-emitters : the control of their distribution(II) | NIMS 1,Hosei Univ. 2@*Yuhei Sato 2, Shoujiro Komatsu 1, Hironori Tanaka 2, Toyohiro Chikyo 1, Yusuke Moriyoshi 2@ |
| | 14 | Self-organized ordering in the distribution of sp3-bonded 5H-BN microcones prepared by plasma-assisted laser CVD |
NIMS 1,Hosei Univ. 2, Ricoh Japan 3 @Komatsu Shojiro
1, Tanaka Hironori 2, Satoh Yuhei 2, Ohta Ohta 3, Moriyoshi Yusuke 2 |
| ’ | 15 | Low temperature formation of SiN films using VHF capacitively coupled plasma and its application to organic devices | Nagoya Univ.1, YOUTEC 2@*Li Minglong1, Matsubara Takeaki1, Takeda Keigo1, Masumoto Yusuke1, Mori Tatsuo1, Tada Shigekazu2, Hayakawa Haruhito2, Hori Masaru1 |
| | 16 | Deposition of a-SiN:H films with SiH4+N2+H2 gas mixture by quarter-wavelength(Ι) matched VHF-PECVD. | Tokyo Polytechnic Univ. 1, A.S.K. 2@*Kobayashi Shin-ichi 1, Aoki Takeshi 1, Kobayashi Hiroaki 2, Asakawa Toshifumi 2 |
| | 17 | Infrared Spectroscopy of Hydrogen Plasma Treatment on Amorphous Carbon Films | Dep. of EEE Nagasaki Univ. 1, Graduate school of Sci. and Technol. Nagasaki Univ. 2, Toyo Advanced Technologies Co. Ltd. 3@*Masanori Shinoahara 1, Ken Cho 1, Takashi Shibasaki 1, Yoshinobu Matsuda 1, Hiroshi Fujiyama 2, Tatsuyuki Nakatani 2,3 |
| | 18 | Investigation on insulating a-C:H films for surface passivation of silicon oxide deposited at low temperature | Osaka Univ. 1@*Yamaoka Keisuke 1, Okada Naomichi 1, Yamaguchi Takashi 1, Yoshizako Yuji 1, Terai Yoshikazu 1, Fujiwara Yasufumi 1 |
| Joint Session E: Spintoronics and Nanomagnetics |
| March 27 9:00`18:00 |
| 27a-ZT-@/ I,III |
| £ | 1 | Electrical and Magnetic properties of Fe3-xO4/InAs hybrid structure | CREST-JST 1, Hokkaido Univ. 2@*Marhoun Ferhat1, Kanji Yoh 1,2 |
| | 2 | Synthesis and Magnetic Properties of Fe@In2-xHoxO3 | KIT 1, NIMS 2, Tohoku Univ. 3, Osaka Univ. 4 @*Nishi Sachio 1, Kohiki Shigemi 1, Okada Koichi 1, Shimooka Hirokazu 1, Deguchi Hiroyuki 1, Mitome Masanori 2, Bando Yoshio 2, Shishido Toetsu 3, Oku Masaoki 3, Ohno Takahiro 4, Tanaka Hidekazu 4, Kawai Tomoji 4 |
| ’ | 3 | Magnetic properties of Fe doped ITO varied with concentration of dopants | KIT 1, Osaka U 2, NIMS 3@*Okada Koichi 1, Kohiki Sigemi 1, Nishi Sachio 1, Shimooka Hirokazu 1, Deguti Hiroyuki 1, Ohno Takahiro 2, Tanaka Hidekazu 2, Kawai Tomoji 2, Mitome Masanori 3, Bando Yoshio 3 |
| ’ | 4 | Ultrafast photoinduced ferromagnetism in perovskite-type manganite Gd0.55Sr0.45MnO3 | AIST CERC 1, Dept. of Advanced Materials Science, Univ. of Tokyo 2, Dept. of Appl. Phys., Univ. of Tokyo 3, ERATO-SSS 4@*Matsubara Masakazu 1, Okimoto Yoichi 1, Ogasawara Takeshi 1, Tomioka Yasuhide 1, Okamoto Hiroshi 1,2, Tokura Yoshinori 1,3,4 |
| | 5 | Spin-dependent transport properties of magnetic tunnel junctions with Fe3O4 electrode | AIST 1@Kado Tetsuo 1, Saito Hidekazu 1, Yuasa Shinji 1, Ando Koji 1 |
| | 6 | A scaling law of anomalous Hall conductivity for Co-doped TiO2 | IMR, Tohoku Univ. 1, JST-CREST 2@Fukumura Tomoteru 1, Toyosaki Hidemi 1, Ueno Kazunori 1, Nakano Masaki 1, Yamasaki Takashi 1, Kawasaki Masashi 1,2 |
| | | Break 10:30`10:45 | |
| | 7 | Self-assembly and its effect on magnetic properties of dilute magnetic semiconductors | ISIR Osaka Univ. 1@*SATO Kazunori 1, FUKUSHIMA Tetsuya 1, TOYODA Masayuki 1, KATAYMA-YOSHIDA Hiroshi 1 |
| | 8 | The effect of co-doping on exchange interaction and clustering of Cr in (Ga,Cr)N | Tohoku Univ. RIEC 1@*Nakano Tatsuya 1,Shirai Masafumi 1,Miura Yoshio 1,Nagao Kazutaka 1 |
| | 9 | Physical properties of GaN based diluted magnetic semiconductors grown by low temperatures (3) | Osaka Univ. ISIR @Y. K. Zhou, S. W. Choi, S. Kimura, M. Funakoshi, S. Shanthi, S. Emura, S. Hasegawa, H. Asahi |
| | 10 | S. Kimura, Y. Hiromura, Y. K. Zhou, S. Emura, S. Hasegawa, H. Asahi | Osaka Univ. ISIR@Kimura Shigeya1, Hiromura Yuki1, Yi Kai Zhou1, Shuichi Emura1, Shigehiko Hasegawa1, Hajime Asahi1 |
| | 11 | Magnetoreflectance spectra of magnetic semiconductor(Zn,Cr)Te | Grad. School of Pure and Applied Sciences, Univ. Tsukuba@Shimizu Sho 1, Nishizawa Nozomi 1, Kuroda Shinji 1, |
| | 12 | Growth of II-VI Ferromagnetic Semiconductor Zn1-xCrxTe on InAs Substrate | Nanoelectronics Res. Inst., AIST 1@Hidekazu Saito 1, Shinji Yuasa 1, Koji Ando 1 |
| | 13 | Growth of Fe3N/AlN/Fe3N trilayer on Si substrates | Inst. of Appl. Phys,Univ. of Tsukuba 1@*Narahara Akari 1,Yamaguchi Kimiaki 1,Suemasu Takashi 1 |
| | | Lunch 12:30`13:30 | |
| 27p-ZT-@/ I,III |
| | 1 | Effect of RF current-driven domain wall resonance on magnetization reversal |
Osaka Univ.1, Canon Anelva2, Kyoto Univ.3, IIAS4@*T.
Nozaki1, H. Maekawa1, M. Mizuguchi1, M. Shiraishi1, Y. Suzuki1, H. Maehara2,
S. Kasai3, T. Ono3, T. Shinjo4,1 |
| | 2 | Analyses of a magnetic domain wall motion by a resistance change |
Osaka Univ. 1, Canon ANELVA 2, Kyoto Univ. 3@*Hiroaki
Maekawa 1, Takayuki Nozaki 1, Hiroki Maehara 2, Shinya Kasai 3, Masashi
Mizuguchi 1, Masashi Shiraishi 1, Teruo Ono 3, Yoshishige Suzuki 1 |
| | 3 | Real-Space Observation of Ultrafast Ferromagnetic Spin Dynamics | CERC AIST 1, Adv. Tech. Res. Labs. Sharp Corp. 2, Dept. Adv. Mat. Sci Univ. of Tokyo 3, Dept. Appl. Phys. Univ. of Tokyo 4@*Ogasawara Takeshi 1, Iwata Noboru 2, Murakami Yoshiteru 2, Okamoto Hiroshi 1 3, Tokura Yoshinori 1 4 |
| | 4 | Highly sensitive FMR measurements using micro-fabricated coplanar wave-guides | Osaka Univ.1, AIST 2@Toda Nobuyuki 1, *Suzuki Yoshishige 1, Ohta Kenta 1, Saito Kazuhiro 1, Maekawa Hiroaki 1, Fukushima Akio 2, Yuasa Shinji 2, Mizuguchi Masaki 1, Shiraishi Masashi 1 |
| ’ | 5 | Structural and magnetic properties of epitaxially grown ferromagnetic Ge1-xMnx thin films | Dept. Electronic Eng., Univ. of Tokyo 1, SORST-JST 2, ISEL, Tokyo Inst. Tech. 3, Dept. Electronics and Appl. Phys., Tokyo Inst. Tech. 4@Yada Shinsuke 1, Tanaka Masaaki 1 2, Sugahara Satoshi 3 4 |
| | 6 | MBE growth and characterizations of ferromagnetic semiconductor Ge1-xFex thin films on Si(001) substrates | Dept. Electronic Eng., Univ. of Tokyo 1, SORST-JST 2, ISEL, Tokyo Inst. Tech. 3, Dept. Electronics and Appl. Phys., Tokyo Inst. Tech. 4@*Shuto Yusuke 1, Tanaka Masaaki 1,2, Sugahara Satoshi 3,4 |
| ’ | 7 | Ferromagnetic interface in Si(111)1~1, 2~2-Fe |
NAIST 1, CREST-JST 2, Tottori Univ. 3, ISSP 4@*Hattori
N. Azusa 1, Hattori Ken 1,2, Takematsu Emi 3, Ishii Akira 3, Komori Fumio
4, Daimon Hiroshi 1,2 |
| ’ | 8 | Fabrication and characterization of L10-CoPt epitaxial thin films | Tohoku Univ. 1@*Kim Gukcheon 1,Sakuraba Yuya 1,Oogane Mikihiko 1,Ando Yasuo 1,Miyazaki Terunobu 1 |
| | | Break 15:30`15:45 | |
| ’ | 9 | Growth of MnAs films on GaN(0001) |
The University of Tokyo 1,2, Kanagawa Academy of
Science and Technology 3, JST-CREST 4, NIMS 5@*Ken Kanai 1, Kotaro Kubo
1, Koji Horiba 1,4, Jitsuo Ohta 2,3, Hiroshi Fujioka 2,3, Keisuke Kobayashi
5, Masaharu Oshima 1,4 |
| ’ | 10 | MnAs film growth on MgO (001) substrates |
School of Engineering Tokyo Univ. 1, IIS Tokyo
Univ. 2,JST-CREST 3@Kubo Kotaro 1, Kanai Ken 1, Ohta Jitsuo 2, Fujioka Hiroshi
2, Oshima Masaharu 1,3 |
| | 11 | Control of MnAs Nanocluster Formation on GaInAs (111)B Surfaces by MOVPE | IST and RCIQE, Hokkaido Univ.@*Shinjiroh Hara 1, Junichi Motohisa 1, Takashi Fukui 1 |
| | 12 | Preparation and characterization of MnSb films for optical devices composed of ferromagnet-semiconductor hybrid structures | Tokyo Inst. of Tech. 1, RCAST, Univ. of Tokyo 2, Tokyo Univ. of Agri. & Tech. 3@*Ogawa Yusuke 1, Schallenberg Timo 1, Munekata Hiroo 1, Amemiya Tomohiro 2, Shimizu Hiromasa 3, Nakano Yoshiaki 2 |
| | 13 | Magnetism of Mn-doped 3C-SiC prepared by ion implantation | NRI-AIST 1, JASRI 2, JAEA 3@*Takano Fumiyoshi 1, Wang Wenhong 1, Ofuchi Hironori 2, Hishiki Shigeomi 3, Ohshima Takeshi 3, Hiro Akinaga 1 |
| | 14 | Magnetic properties of Si:Ce Thin Films with high Ce concentration | Osaka Pref. Univ. 1@*Terao Takemi 1, Nishimura Yoshihiro 1, Fujimura Norifumi 1 |
| | 15 | Fabrication and the properties of Ce Β-doped Si thin films on Si(001) | Osaka Pref. Univ. 1@*Nishimura Yoshihiro 1, Terao Takemi 1, Fujimura Norifumi 1 |
| | 16 | Composition dependence of conduction properties in C60-Co nano-composites devices | Osaka Univ. 1@*Shinichi Tanabe 1, Shinji Miwa 1, Shingo Nishioka 1, Hiroyuki Tomita 1, Masaki Mizuguchi 1, Teruya Shinjo 1, Yoshishige Suzuki 1, Masashi Shiraishi 1 |
| | 17 | Magnetic and magnetotransport properties in nanogranular Co-C60 films fabricated by a co-deposition method | IMR Tohoku Univ. 1, Advanced Research Center JAEA. 2, Dept. of Energy Science and Technology Kyoto Univ. 3,@*Sugai Isamu 1,2, Sakai Seiji 2, Mitani Seiji 1, Takanashi Koki 1, Naramoto Hiroshi 2, Pavel Avramov 2, Okayasu Satoru 2, Narumi Kazumasa 2, Maeda Yoshihito 2,3, |
| Joint Session E: Spintoronics
and Nanomagnetics |
| March 28 9:00`19:00 |
| 28a-ZT-@/ I,III |
| | 1 | Brillouin light scattering of epitaxially grown Co2MnSi films | Tohoku Univ. 1, TU Kaiserslautern 2@*Yasuo Ando 1, Sebastian Hermsdoerfer 2, Oksana Gaier 2, Yuya Sakuraba 1, Mikihiko Oogane 1, Burkard Hillebrands 2, Terunobu Miyazaki 1 |
| | 2 | Magnetoresistance effect in tunnel junctions with epitaxial Co2MnSi electrode | Tohoku Univ. 1@*Hattori Masashi 1,Sakuraba Yuya 1,Oogane Mikihiko 1,Ando Yasuo 1,Miyazaki Terunobu 1 |
| | 3 | Tunneling Spin Polarization of Co2MnSi Heusler Alloys |
Tohoku Univ. 1@*Kubota Takahide 1, Sakuraba Yuya
1, Daibou Tadaomi 1, Oogane Mikihiko 1,Ando Yasuo 1, Miyazaki Terunobu 1 |
| | 4 | Spin injected magnetization reversal in Co2MnSi/Cu/CoFe multilayer | Tohoku Univ. 1, AIST 2@*Oogane Mikihiko 1, Murakami Shuichi 1, Kubota Hitoshi 2, Ando Yasuo 1, Miyazaki Terunobu 1 |
| £ | 5 | Oscillatory Interlayer Coupling in Epitaxial Co2MnSi/Cr/Co2MnSi Trilayers |
IMR, Tohoku Univ. 1, NeRI AIST 2 @*Wang Hai 1,
Sato Akira 1, Yakushiji Kay 2, Saito Kasami 1, Mitani Seiji 1, Takanashi
Koki 1 |
| ’ | 6 | Co2MnSi film composition dependence of TMR characteristics of epitaxial magnetic tunnel junctions | Hokkaido Univ. 1@*Takayuki Ishikawa 1, Takao Marukame 1, Shinya Hakamata 1, Ken-ichi Matsuda 1, Tetsuya Uemura 1, Masafumi Yamamoto 1 |
| | | Break 10:30`10:45 | |
| ’ | 7 | Magnetotransport properties of magnetic tunnel junctions with Co2MnZ (Z = Si, Al)electrode | Tohoku Univ. 1, AIST 2@*Sakuraba Yuya 1, Hattori Masashi 1, Oogane Mikihiko 1, Kubota Hitoshi 2, Ando Yasuo 1, Sakuma Akimasa 1, Miyazaki Terunobu 1 |
| ’ | 8 | Improved TMR characteristics of MTJs with a Heusler alloy Co2MnGe thin film | Hokkaido Univ. 1@*Hakamata Shinya 1, Ishikawa Takayuki 1, Marukame Takao 1, Matsuda Ken-ichi 1, Uemura Tetsuya 1, Yamamoto Masafumi 1 |
| ’ | 9 | Preparation of Heusler alloys employing silicon-on-insulator (SOI) substrates and their magnetic properties | ISEL, Tokyo Inst. of Tech. 1, Dept. of Electronic Eng., Univ. of Tokyo 2@*Takamura Yota 1,Nakane Ryosho 2,Munekata Hiroo 1,Sugahara Satoshi 1 |
| ’ | 10 | Fabrication of fully epitaxial Co2Cr0.6Fe0.4Al/MgO/Co2Cr0.6Fe0.4Al magnetic tunnel junctions | Hokkaido Univ. 1@*Takao Marukame 1, Takayuki Ishikawa 1, Shinya Hakamata 1, Ken-ichi Matsuda 1, Tetsuya Uemura 1, Masafumi Yamamoto 1 |
| | 11 | Magnetoresistance Effect in Ferromagnetic Tunnel Junctions for Co2FeAl0.5Si0.5/MgO/ Co2FeAl0.5Si0.5 | Tohoku Univ. 1, CREST-JST 2, NIMS 3@*Nobuki Tezuka 1,2, Nomichi Ikeda 1, Satoshi Sugimoto 1, Koichiro Inomata 2,3 |
| | 12 | First-principles calculation of electrical conduction in Co2MnSi/Al-O/Co2MnSi magnetic tunnel junctions | Tohoku Univ RIEC. 1@*Yoshihiro Oba 1, Yoshio Miura 1, Kazutaka Nagao 1, Masafumi Shirai 1 |
| | 13 | Ab initio study on atomic disorder of full-Heusler alloy/insulator interface and tunneling conductance | RIEC Tohoku Univ. 1@*Yoshio Miura 1, Yoshihiro Oba 1, Kazutaka Nagao 1, Masafumi Shirai 1 |
| | | Lunch 12:30`13:30 | |
| 28p-ZT-@/ I,III |
| ’ | 1 | Epitaxial of growth of (Ga,Mn)As layers with a Sb beam | Tokyo Inst. of Tech. 1@*Nobutani Kazutaka 1, Kobayashi Satoi 1, Munekata Hiroo 1 |
| | 2 | Fabrication and characterizations of Si doped (Ga,Mn)As |
Japan Science and Technology Agency 1, Tohoku University
2@*Takehiro Tanikawa 1,2, Fumihiro Matsukura 1,2, Hideo Ohno 1,2 |
| | 3 | Strain-induced modulation of carrier transport properties of GaMnAs | NTT BRL@*Koji Onomitsu, Imran Mahboob, Hajime Okamoto, Hiroshi Yamaguchi |
| | 4 | GaMnNAs Growth using Nitrogen Plasma Source and its Magnetic Properties | TUSY 1, NARC-AIST 2, NRI-AIST 3@*Takashi Manago 1, Kenji Kawaguchi 2, Hiroyuki Akinaga 3 |
| | 5 | Molecular beam epitaxy and post-growth annealing effect to the magnetic properties of GaMnNAs | Tohoku Univ. CIR 1, Tohoku Univ. IMR 2, JASRI 3, NIMS 4, Kochi Univ. of Tech. 5@*Genki Kobayashi 1,2,Takahiro Mori 1,2,Jung-Jin Kim 3,Keisuke Kobayashi 4,Katsushi Fujii 1,2,Takashi Kato 1,2,Takashi Hanada 1,2,Makino Hisao 5, and Takafumi Yao 1,2 |
| | 6 | Dependence of electrical conduction on (In,Mn)As layer thickness in (In,Mn)As/GaSb heterostructures | Tokyo Inst. of Tech. 1@*Nose Hiroki 1,Timo Schallenberg 1,Munekata Hiroo 1 |
| ’ | 7 | Magnetotransport and magneto-optical properties of ferromagnetic GaMnAs thin films with high Mn concentrations | Dept. of Elec. Eng., The Univ. of Tokyo 1, PRESTO-JST 2, SORST-JST 3@*Kenichi Ohno 1, Shinobu Ohya 1,2, Masaaki Tanaka 1,3 |
| ’ | 8 | Magnetic anisotropy of ferromagnetic (InGaMn)As thin films studied by planar Hall resistance measurements | The Univ. of Tokyo 1, JST 2@*Yokoyama Masafumi 1, Tanaka Masaaki 1,2 |
| | 9 | Interpretation of transient MO signals induced by the optical excitation of (Ga,Mn)As | ISEL Tokyo Inst. of Tech.@*Yusuke Hashimoto, Hiroo Munekata |
| | 10 | Electrical detection of domain wall motion in (Ga,Mn)As | RIEC Tohoku Univ. 1, ERATO-JST 2@Fukuda Masahiro 1, Yamanouchi Michihiko 2, *Matsukura Fumihiro 1 2, Ohno Hideo 1 2 |
| | | Break 16:00`16:15 | |
| | 11 | Spin-dependent resonant tunneling effect in GaMnAs quantum-well double-barrier heterostructures | The Univ. of Tokyo 1, PRESTO-JST 2, SORST-JST 3@*Shinobu Ohya 1,2, Pham Nam Hai 1, Yosuke Mizuno 1, Masaaki Tanaka 1,3 |
| | 12 | Theoretical analysis of the quantum levels in the GaMnAs quantum-well double-barrier heterostructures | The Univ. of Tokyo 1, PRESTO-JST 2, SORST-JST 3@*Shinobu Ohya 1,2, Masaaki Tanaka 1,3 |
| | 13 | Current-driven magnetization reversal in GaMnAs-based double-barrier MTJ structures : Free-layer thickness dependence | Tokyo Inst. Tech. 1@*Watanabe Maya 1,Toyao Hiroshi 1,Okabayashi Jun 1,Yoshino Junji 1 |
| ’ | 14 | Spin-dependent transport properties in GaMnAs-based magnetic tunnel transistors | Dept. of Elec. Eng., Univ. of Tokyo 1, PRESTO-JST 2, SORST-JST 3@Mizuno Yosuke 1, Ohya Shinobu 1,2, Pham Nam Hai 1, Tanaka Masaaki 1,3 |
| ’ | 15 | Spin injection and detection by ballistic transport in MnAs / GaAs / GaAs:MnAs spin–valve heterostructures | Dept. of Elec. Eng. Univ. of Tokyo 1, JST 2 @*Pham Nam Hai 1, Keisuke Sakata 1, Masafumi Yokoyama 1, Shinobu Ohya 12, Masaaki Tanaka 12 |
| ’ | 16 | Mn composition dependence of properties in (Ga,Mn)As FET structures | RIEC Tohoku Univ. 1, ERATO JST 2@*Nishitani Yu 1, Chiba Daichi 2,1, Matsukura Fumihiro 1,2, and Ohno Hideo 1,2 |
| ’ | 17 | Channel thickness dependence of properties in (Ga,Mn)As FET structures | RIEC Tohoku Univ. 1,ERATO JST 2@Endo Masaki 1,Nishitani Yu 1,Chiba Daichi 2,1,Matsukura Fumihiro 1,2,Ohno Hideo 1,2 |
| | 18 | Growth and properties of Ga1-xMnxAs with high Mn composition ((x>0.1) | ERATO JST 1, RIEC Tohoku Univ. 2 @Chiba Daichi 1,2, Nishitani Yu 2, Matsukura Fumihiro 2,1, Ohno Hideo 2,1 |
| ’ | 19 | Epitaxial growth of L10-FePt/MgO on GaAs and annealing effect | Tohoku Univ. 1,CREST-JST 2,IMR Tohoku Univ. 3@*Ohtsu Akihiko 1,Kohda Makoto 1,2,Fujita Asaya 1,Nitta Junsaku 1,2,Seki Takeshi 3,Takanashi Koki 3 |
| | 20 | Growth Condition Dependence of the Circular Polarization of Fe/MgO/GaAs spin-LEDs | TUSY 1, NRI-AIST 2@Takashi Manago 1, Asawin Sinsarp 2, Hiroyuki Akinaga 2 |
| £’ | 21 | Spin Injection from FePt/MgO Tunneling Junction into GaAs Investigated by Spin-Polarized Electroluminescence | NRI-AIST 1, TUSY 2@*Asawin Sinsarp 1, Takashi Manago 2, Fumiyoshi Takano 1, Hiro Akinaga 1 |
| Joint Session E: Spintoronics
and Nanomagnetics |
| March 29 9:00`12:00 |
| 29a-ZT-@/ I,III |
| | 1 | Dependence of Magnetoresistance effect on composition in Fe-MgO glanular films | Daido Inst. of Tech. 1,Mie Univ. 2@Totuka Jun 1,Matumoto Kazuo 1,Fujiwara Yuji2,Jimbo Mutsuko1 |
| | 2 | Measurement of magnetization curve of submicron-sized Fe/Au/Fe trilayer ring by using local Hall effect | Tohoku Univ. 1, CREST JST 2@*Miyawaki Tetsuya 1, Kohda Makoto 1, Fujita Asaya 1, Nitta Junsaku 1,2 |
| | 3 | Resistance change in NiFe point-contacts formed by sputtering | Toshiba Corp. 1, Tohoku Univ. 2@Ohsawa Yuichi 1,2 |
| | 4 | Spin dependent transport in a ferromagnetic Co single-electron transistor having a superconducting Al island | UEC Tokyo, EE 1, UEC Tokyo, PC 2@Yoshinao Mizugaki 1, Hidemitsu Hakii 1, Masataka Moriya 1, Kouichi Usami 1, Tadayuki Kobayashi 1, and Hiroshi Shimada 2 |
| | 5 | Spin pumping from finite-sized electron systems at paramagnetic resonance | Grad. Sch. of Eng. Sci., Osaka Univ.@Kiminori Hattori 1 |
| | | Break 10:15`10:30 | |
| | 6 | Micromagnetic simulation of magnetization reversal process in Fe film wire and the stray field | RCIQE Hokkaido Univ.@*Ohno Munekazu 1, Yoh Kanji 1 |
| | 7 | Magnetization reversal of ferromagnetic nanostructure by magnetic field from applied current | Yokohama National Univ. 1, Tokyo Univ. of Agriculture and Technology 2@Yokoyama Tatsuhiko 1,Shibata Hiroki 1,*Ishii Noriyuki 1,Yamada Tsutomu 1,Shirakashi Jun-ichi 2,Takemura Yasushi 1 |
| | 8 | Magnetic field dependence of current-induced magnetization reversal in perpendicularly magnetized FePt layers | IMR Tohoku Univ. 1@*Seki Takeshi 1, Mitani Seiji 1, Takanashi Koki 1 |
| | 9 | Spin injection in lateral structures with perpendicularly magnetized FePt layer | IMR Tohoku Univ. 1@*Hasegawa Yu 1, Seki Takeshi 1, Mitani Seiji 1, Takanashi Koki 1 |
| | 10 | Reversal current distribution of current-induced-magnetization-reversal with field and current reset | AIST 1@Fukushima Akio 1, Kubota Hitoshi 1, Yakushiji Kay 1, Yuasa Shinji 1, Ando Koji 1 |
| | 11 | A spin-injection magnetization reversal of a pinned layer in IrMn/CoFe/Cu/CoFe/IrMn CPP-GMR junctions | Osaka Univ. 1, AIST 2, Canon Anelva 3@*Takekazu Yamane 1, Alina Deac 1,2, Akio Fukushima 2, Hitoshi Kubota 2, Yuichi Otani 2, Masaki Mizuguchi, Yoshishige Suzuki 1, Shinji Yuasa 2, Hiroki Maehara 3, Koji Tunekawa 3, David D Djayaprawira 3, Naoki Watanabe 3, Yoshinori Nagamine 3 |
| Joint Session E: Spintoronics
and Nanomagnetics |
| March 30 9:00`12:00 |
| 30a-ZS-@/ I,III |
| | 1 | Charge Spin applicable for Macro-Micro-Magnetism | Human Electromagnetics-Charge Spin Laboratory@Toshiro Ohnuma |
| | 2 | Spin interference effect in triangular loop arrays fabricated in InGaAs quantum wells | Hokkaido Univ. 1, JST CREST 2, NTT BRL 3 @Okutani Hiroshi 1, Koga Takaaki 1,2, Sekine Yoshiaki 3 |
| ’ | 3 | Spin transport in a single InAs quantum dot with ferromagnetic leads | IIS, Univ.Tokyo 1,MSL, Tokyo Inst.Tech. 2, RCAST, Univ.Tokyo 3 @K. Hamaya 1, M. Kitabatake 1, S. Masubuchi 1, M. Kawamura 1, M. Jung 1, K. Shibata 1, K. Hirakawa 1, T. Taniyama 2, S. Ishida 1, Y. Arakawa 1,3, T. Machida 1 |
| | 4 | Transport properties of vertical quantum dot with Al2O3 gate insulator under a high magnetic field | ERATO-JST 1,Tohoku Univ. RIEC 2@Kita Tomohiro 1,2, Chiba Daichi 1,2, Ohno Yuzo 2, Ohno Hideo 1,2 |
| ’ | 5 | Electron spin splitting effect in AlSb/InAs/AlSb quantm wells - Zeeman splittting - | Hokkaido Univ. 1, JST CREST 2, Tohoku Univ. 3@Kim Min-Yu 1, Fujii Takahiko 1, Koga Takaaki 1,2, Otani Keita3 |
| | 6 | Effect of wave function distribution on spin-orbit interaction of channel electrons in InAs based HEMTs | Hokkaido Univ. 1@*Takashi Matsuda 1, Keita Konishi 1, Kanji Yoh 1 |
| | | Break 10:30`10:45 | |
| ’ | 7 | Control of spin-orbit interaction by surface etching in InGaAs/InAlAs two dimensional electron gas | Tohoku Univ. 1, CREST-JST 2@*Kunihashi Yoji 1, Nihei Takayuki 1, Kohda Makoto 1,2, Nitta Junsaku 1,2, |
| | 8 | Well width dependence of spin orbit interaction in In0.52Al0.48As / In0.8Ga0.2As / InP asymmetric quantum wells | Tohoku Univ. 1, CREST-JST 2@Takayuki Nihei 1, *Makoto Kohda 1,2, Junsaku Nitta 1,2 |
| | 9 | Effects of Electrode Shape on Spatial Spin-Relaxation of Two-Dimensional Electron Gas | Graduate School of Engineering, Hokkaido Univ.@ Honda Masashi M, Hatanaka Yosuke, Tsuchiya Takuma |
| ’ | 10 | Generation of High Circulary polarized Light from Highly Uniform InAs/GaAs Quantum Dots | Waseda Univ. 1, Univ. of Electro-Comm. 2@*Umi Takehiko 1, Tsukiji Nobukazu 2, Kusunoki Koji 1, Yamaguchi Koichi 2, Tackeuchi atsushi 1 |
| ’ | 11 | Detection of Local Nuclear Spin Polarization by Time-Resolved Kerr Microscopy | RIEC, Tohoku Univ. 1, ERATO JST 2, CREST JST 3@*Matsuzaka Shunichiro 1, Ohno Yuzo 1,3, Ohno Hideo 1,2 |
| Joint Session E: Spintoronics
and Nanomagnetics |
| March 30 9:00`15:00 |
| 30a-ZT-@/ I,III |
| | 1 | Effect of adjacent materials on B diffusion for CoFeB/MgO/CoFeB magnetic tunnel junctions | NICHe, Tohoku Univ. 1, Tohoku Univ. 2@*Ashizawa Yoshito 1, Sunaga Kazuyuki 2, Ohyama Hirohisa 2, Tsunoda Masakiyo 2, and Takahashi Migaku 1,2 |
| | 2 | Tunnel Magnetoresistance Effect for Pseudo-Spin-Valve MTJs with MgO Barrier | RIEC, Tohoku Univ.1, ARL, Hitachi Ltd.2, Tohoku Univ.3@*Shoji Ikeda1, Jun Hayakawa2,1, Young Min Lee1, Yoshito Ashizawa3, Masakiyo Tsunoda3, Fumihiro Matsukura1, and Hideo Ohno1 |
| | 3 | Fabrication of four-valued magnetic tunnel junction using an epitaxial CoFe/MgO/CoFe structure | Hokkaido Univ. 1@*Uemura Tetsuya 1, Marukame Takao 1, Matsuda Ken-ichi 1, Yamamoto Masafumi 1 |
| | 4 | Differential conductance measurement of fully epitaxial Co/MgO/Co magnetic tunnel junctions | Osaka Univ. 1, AIST 2@*Nishioka Shingo 1,Matsumoto Rie 2,1, Tomita Hiroyuki 1,Mizuguchi Masaki 1,Shiraishi Masashi 1,Fukushima Akio 2,Yuasa Shinji 2,Suzuki Yoshishige 1,2 |
| | 5 | High-frequency noise properties of TMR heads | Osaka Univ. 1, Fujitsu Ltd. 2, AIST 3@*Mizuguchi Masaki 1, Suzuki Yoshishige 1, Uehara Yuji 2, Akimoto Hideyuki 2, Kanai Hitoshi 2, Kobayashi Kazuo 2, Yuasa Shinji 3 |
| | 6 | Ferromagnetic layer thickness dependence of critical current density in MgO barrier magnetic tunnel junctions with synthetic ferrimagnetic free layers | Hitachi ARL 1,Tohoku Univ. RIEC 2@*Hayakawa Jun 12,Ikeda Shoji 2,Young Min Lee 2,Sasaki Ryutaro 2,Matsukura Fumihiro 2,Meguro Toshiyasu 2,Takahashi Hiromasa 12,Ohno Hideo 2 |
| | | Break 10:30`10:45 | |
| | 7 | Improvement of high frequency transmission property and spin-torque diode effect in MgO-MTJs | AIST 1, Canon ANELVA 2, Osaka Univ. 3@*Yakushiji Kay 1, Kubota Hitoshi 1, Fukushima Akio 1, Yuasa Shinji 1, Maehara Hiroki 2, Tsunekawa Koji 2, David Djayaprawira 2, Suzuki Yoshishige 3, Ando Koji 1 |
| | 8 | Angular dependence of spin-transfer efficiency in MTJs |
AIST 1, Canon ANELVA 2, Osaka Univ. 3 @*H. Kubota
1, A. Fukushima 1, K. Yakushiji 1, S. Yuasa 1, K. Ando 1, H. Maehara 2,
K. Tsunekawa 2, D. D. Djayaprawira 2, N. Watanabe 2, Y. Suzuki 1,3 |
| ’ | 9 | TMR oscillation in fully epitaxial MTJs with a single-crystal MgO(001) tunnel barrier –dependence on interface structure- | AIST 1, Osaka Univ. 2@*Matsumoto Rie 1,2, Yuasa Shinji 1,2, Fukushima Akio 1, Nagahama Taro 1, Suzuki Yoshishige 1,2, Ando Koji 1 |
| | 10 | TMR oscillation in fully epitaxial MTJs with a single-crystal MgO(001) tunnel barrier –dependence on electrode materials- | AIST 1, Osaka Univ. 2@*Yuasa Shinji 1,2, Matsumoto Rie 1,2, Fukushima Akio 1, Nagahama Taro 1, Suzuki Yoshishige 1,2, Ando Koji 1 |
| | 11 | Spin transfer switching in nonosecond regime for MgO based ferromagnetic tunnel junctions | Tohoku Univ.@Tatsuya Aoki 1, Daisuke Watanabe 1, Yasuo Ando 1, Mikihiko Oogane 1, Terunobu Miyazaki 1 |
| | | Lunch 12:00`13:00 | |
| 30p-ZT-@/ I,III |
| | 1 | Application of CNT-MFM Probes to Soft Magnetic Materials | NRI-AIST 1,Lancaster Univ. 2@*Kuramochi Hiromi 1, Manago Takashi 1, Koltsov Denis 2, Takenaka Masato 1, Iitake Masanori 1, Akinaga Hiroyuki 1 |
| | 2 | STM observation of MgO barrier layers grown on CoFeB ferromagnetic layers | Osaka Univ. 1, AIST 2@*Mizuguchi Masaki 1, Nagahama Taro 2, Yuasa Shinji 2, Suzuki Yoshishige 1, |
| | 3 | Current-induced magnetization switching in the self-differential detection memory devices using laminated MTJs | Toshiba R&D 1, JST-CREST 2, NIMS 3@*Sugiyama Hideyuki 1,2, Inokuchi Tomoaki 1,2, Saito Yoshiaki 1,2, Inomata Koichiro 2,3 |
| | 4 | MR enhancement in high bias voltage for EuS spin-filter magnetic tunnel junctions | AIST-NeRI 1, MIT-FBML 2@*Nagahama Taro 1,2, T.S. Santos 2, J.S. Moodera 2 |
| | 5 | Spin-dependent resonant tunneling in fully epitaxial Cr/ultra-thin Fe/MgO/Fe(001) magnetic tunnel junctions | CREST-JST 1, Tohoku Univ. 2, NIMS 3@*Niizeki Tomohiko 1, Tezuka Nobuki 1,2, Inomata Koichiro 1,2,3 |
| | 6 | Optimized inorganic resist process for nano magnetic junctions | National Institute of AIST@Satoshi Haraichi 1 |
| | 7 | Development of reactive ion etching for discrete track perpendicular media using chlorine series gases. | ULVAC,Inc.@*Tadashi Yamamoto 1, Ken-ichi Imakita 1, Tadashi Morita 1, Yoshifumi Yamazaki 2, Yutaka Kokaze 3, Koukou Suu 3, Hirohiko Murakami 1 |
| | 8 | Improvement of magnetic properties of MTJs with SiN protective film deposited by low temperature HDP CVD | NEC 1,Mitsubishi Heavy Industries 2@*Suemitsu Katsumi 1,Kawano Yuichi 2,Utsumi Hiroaki 1,Nohisa Tatsuhiko 2,Ohshima Norikazu 1,Shimazu Tadashi 2,Inoue Masahiko 2,Hada Hiromitsu 1 |
| Joint Session F: Physics
and Applications of Carbon Nanotubes |
| March 27 9:00`18:00 |
| 27a-ZR-@/ I,II,III |
| | 1 | Synthesis of Carbon Nanotubes from Ethanol Using Fe, Co, and Ni Catalysts | The Univ. of Tokyo@*Kazunori Kakehi, Suguru Noda, Shigeo Maruyama, Yukio Yamaguchi |
| | 2 | Effect of Al2O3 substrates on carbon nanotube catalysts | Tokyo Univ. of Science 1@*Ohno Hiroshi 1,Igari Kazuhiko 1,Takagi Daisuke 1,Chiashi Syouhei 1,Homma Yoshikazu 1 |
| | 3 | Low temperature growth of single-wall carbon nanotubes by low pressure |
RIKEN. 1, TUS. 2, CREST-JST. 3@*Yoshida Hiroshi
1,2, Asakura Masahiro 1,2, Shiokawa Takao 1,3, Homma Yoshikazu 2,3, Ishibashi
Koji 1,3 |
| | 4 | Dependence of single-walled carbon nanotube growth efficiency on the thickness of SiO2 substrate | Kyoto Inst. Tech. 1, Wakayama Univ. 2@*Murakami Toshiya1, Tokuda Takahiro1, Hasebe Yuki1, Higashi Kengo1, Kisoda Kenji2, Nishio Koji1, Isshiki Toshiyuki1, Harima Hiroshi1 |
| | 5 | Single-walled carbon nanotube synthesis using atmospheric-heated Au, Ag, and Cu catalysts | Tokyo Univ. of Science 1, NTT Basic Res. Labs. 2, JST-CREST 3@*Takagi Daisuke 1, Homma Yoshikazu 1, 3 , Hibino Hiroki 2, Suzuki Satoru 2, Kobayashi Yoshihiro 2, 3 |
| | 6 | Carbon nanowire/nanotube synthesis using self-ordered Au-Si nanoparticle | Tokyo Univ. of Science 1, NTT Basic Res. Labs. 2, JST-CREST 3@*Takagi Daisuke 1, Homma Yoshikazu 1, 3 , Hibino Hiroki 2, Suzuki Satoru 2, Kobayashi Yoshihiro 2, 3 |
| | | Break 10:30`10:45 | |
| | 7 | Low temperature growth of Carbon nanotube using alcohol gas in high vacuum | Dept. of Materials Science & Engineering, Meijo Univ. 1, Meijo Univ. 21st CENTURY COE program "Nano Factory" 2@*Tanioku Kenji 1, Shiraiwa Tomoyuki 1, Kato Yoshiaki 1, Maruyama Takahiro 1,2, Naritsuka Shigeya 1,2 |
| | 8 | Aligned single-walled carbon nanotube growth on sapphire substrate and its alignment mechanism |
Meiji Univ. 1, NTT BRL 2, Tokyo Univ. of Sci. 3,
CREST/JST 4@*Yamazaki Akira1,2, Takagi Daisuke3, Suzuki Satoru2,4, Jeong
Goo-Hwan2,4, Yoshimura Hideyuki1, Homma Yoshikazu3,4, Kobayashi Yoshihiro2,4 |
| ’ | 9 | Competition and cooperation between surface atomic arrangement and surface steps on aligned SWNT growth on sapphire | Kyushu University@*Imamoto Kenta 1, Ago Hiroki 1,2, Ishigami Naoki 1, Ohdo Ryota 1, Ikeda Ken-ichi 1, Tsuji Masaharu 1,2 |
| | 10 | Effect of CO2 addition on chemical vapor deposition of carbon nanotubes using CH4 gas | Hokkaido Univ. 1,Univ. of Tsukuba 2@*Y. Suda 1,T. Saito 1,A. Okita 1,A. Ozeki 1,J. Nakamura 2,Y. Sakai 1,H. Sugawara 1 |
| | 11 | Selective synthesis of vertical aligned SWCNTs, DWCNTs and 3WCNTs by Radiant Heat Alloying CVD | Nikon Corp.@*Makiko Kikuchi 1, Yusuke Taki 1, Akira Tanaka 1 |
| | 12 | Selective growth of double-walled carbon nanotubes - optimization of CVD - |
Kyoto Inst. Tech.1, Wakayama Univ.2@Naito Ryoji
1, Murakami Toshiya 1, Matsumoto Kazuyo 1, Kisoda Kenji 2, Isshiki Toshiyuki
1, Harima Hiroshi 1 |
| ’ | 13 | Growth of single and double-walled carbon nanotubes using size-classified catalyst nanoparticles with an impactor |
Fujitsu Limited 1, Nanotechnology Research Center,
Fujitsu Laboratories Ltd. 2, CREST/JST 3@*Kondo Daiyu 1,2,3, Sato Shintaro
1,2,3, Yamaguchi Yoshitaka 2, Iwai Taisuke 1,2,3, Awano Yuji 1,2,3 |
| | | Lunch 12:30`13:30 | |
| 27p-ZR-@/ I,II,III
|
| ’ | 1 | Separation of metallic and semiconducting single-walled carbon nanotubes by electrophoresis | Osaka Univ 1,2, Yamagata Univ. 3, Technol. Res. Inst. of Osaka Pref. 4@*Yoshikazu Wakizaka 1, Ken-ichi Nakayama 2,3, Satoshi Tanaka 2, Yoshiaki Sakurai 4, Yasuo Kanematsu 1, Masaaki Yokoyama 1,3 |
| | 2 | A Novel Dispersing Method for Carbon Nanotubes Using Ultrasonic | Yamagata Univ. 1@*Sano Masahito 1, Saito Hiroshi 1 |
| | 3 | Highly aligned single-walled carbon nanotube growth on metal tips and its field emission property | Tokyo Univ. of Science 1,Waseda Univ. 2,JST-CREST 3@*Takayuki Koizumi 1,Masato Ikeda 1,Daisuke Takagi 1,Eiji Rokuta 2,Chuhei Oshima 2,Yoshikazu Homma 1 3 |
| | 4 | Field Emission Microscopy Observations of Layer by Layer Oxidized Erosion of Multiwall Carbon Nanotube Tip | Graduate School of Eng., Mie Univ. 1, Graduate School of Eng., Nagoya Univ. 2@Waki Shunsaku 1, Kishimoto Yoshiki 1, Saito Yahachi 2, *Hata Koichi 1 |
| | 5 | Study on Field Enhancement Factor of a Carbon Nanotube Field Emitter by In Situ TEM | Nagoya Univ.@Okumura Kensuke 1, Seko Kazuyuki 1, Asaka Koji 1, Suzuki Yasunobu 1, Saito Yahachi 1 |
| £ | 6 | Effects of Ambient Gas on Electron Field Emission from Carbon Nanotubes | Kochi Univ. Technol. 1@*Qin Zou 1, Akimitsu Hatta 1 |
| £ | 7 | Study on MWNT Multi-Emitter Array | The Graduate Univ.for Advanced Studies 1,KAKEN Co. 2,KEK 3@*Noguchi Tsuneyuki 2,Liu Huarong 1,Kato Shigeki 1,3 |
| | 8 | Thermal-Field Electron Emission from Well-Aligned Carbon Nanotubes | Kyoto Inst. Technol. 1 Taiyoko Lab. 2@*Omae Atsuyoshi 1,Yoshioka Hisashi 1,Hayashi Yasuaki 1,Kitamura Kouzo 2,Tukumo Kiyohiko 2 |
| | | Break 15:30`15:45 | |
| | 9 | Fabrication and Characterization of Screen Printed Carbon Nanotube Emitter Made of CVD-grown Carbon Nanotubes |
Osaka Univ. 1, Res. Center for UVEM 2 @*Kumiko
Yoshihara 1, Shunjiro Fujii 1, Hideyasu Kawai 1, Kazuhiro Ishida 1, Yuya
Tanaka 1, Kenjiro Oura 2, Shin-ichi Honda 1, Mitsuhiro Katayama 1 |
| | 10 | Application to a field emitter of CNTs by SiC surface decomposition method | JFCC 1, Toshiba 2@Application to a field emitter of CNTs by SiC surface decomposition method |
| ’ | 11 | MgO Coating on Carbon Nanowalls and The Field Emission Property | Nagoya Univ. 1,KATAGIRI ENGINEERING Co.,LTD. 2,NU Eco-Engineering Co.,LTD. 3,Meijo Univ. 4@*Obayashi Tomomi 1,Yamakawa Koji 2,Kano Hiroyuki 3,Hiramatsu Mineo 4,Hori Masaru 1 |
| ’ | 12 | Supporting Effect of Carbon Nanowalls with Dispersed Metal Nanoparticles on Field Emission Properties | Nagoya University1, Meijo University2, KATAGIRI ENGINEERING CO., LTD. 3@*Takuma Machino1, Masatoshi Nakamura2, Koji Yamakawa3, Mineo Hiramatsu2 and Masaru Hori1 |
| | 13 | Strong Electron-Emission from Carbon Nanofiber/Elastomer Nanocomposits | Fac of Eng. Kobe Univ. 1, NAIST 2, Nissin Kogyo 3, Shinshu Univ. 4@*Y. Hayasi 1, M. Kawamura1, T. Kita 1, O. Wada 1, H. Ynagi 2, A. Magario 3, T. Noguchi 3, M. Endo 4 |
| ’ | 14 | Mass Production of Powder-Form Carbon Nanotwist and Application to Field Emitter | Toyohashi Univ. Technol. 1,Toho Gas Co., Ltd. 2,Futaba Corporation 3@*Yuji Hsokokawa 1,Ryohei Sugiura 1,Hajime Shiki 1,Shinichiro Oke 1,Hirohumi Takikawa 1,Takashi Ina 2,Shigeo Itoh 3,Tatsuo Yamaura 3 |
| | 15 | Fabrication of Carbon Nanofiber Emitter for Excitation of Organic Phosphor Thin Films | Nihon Univ.1@*Ide Shinji 1, Yoshikuni Masato 1, Iwata Nobuyuki 1, Yamamoto Hiroshi 1 |
| | 16 | Fabrication and characterization of carbon nanotube cold cathode emitter for gas ionization | Osaka Univ. 1, Res. Center for UVEM 2@*Shunjiro Fujii 1, Hirofumi Suto 1, Kumiko Yoshihara 1, Hideyasu Kawai 1, Kazuhiro Ishida 1, Yuya Tanaka 1, Kenjiro Oura 2, Shin-ichi Honda 1, Mitsuhiro Katayama 1 |
| | 17 | Development of Nanofocused X-ray Source Equipped with Carbon Nanotube Field Emission Cathode - Evaluation of Electron Beam Probe Diameter - | Graduate School of Eng., Mie Univ. 1, Graduate School of Eng., Nagoya Univ. 2@*Ryosuke Yabushita 1, Kazuyuki Seko 2, Yahachi Saito 2, Koichi Hata 1 |
| Joint Session F: Physics
and Applications of Carbon Nanotubes |
| March 28 9:15`18:15 |
| 28a-ZR-@/ I,II,III |
| | 1 | Catalyst activity for the growth of a carbon nanocoil | Osaka Pref. Univ. 1, OSTEC 2, Tech. Res. Inst. of Osaka Pref. 3, Nissin Electric 4, Osaka Univ. 5@Shogo Hokushin 1, *Ryo Kanada 1, Yukihiro Fujiyama 2, Hideki Kume 3, Yugo Higashi 4, Lujun Pan 1 and Yoshikazu Nakayama 1,5 |
| ’ | 2 | Vertical Orientation of Carbon Nano coils Using Dielectrophoresis | Osaka Pref.Univ. 1,OSTEC 2,Tech. Res. Inst. of Osaka Pref. 3,Nissin Electric 4,Osaka Univ. 5@*Tomokane Ryota 1,Fujiyama Yukihiro 2,Tanaka Kenichiro 3,Akita Seiji 1,Higashi Yugo 4,Pan Lujun 1,Nosaka Toshinori 3,Nakayama Yoshikazu 1,5 |
| ’ | 3 | Structural control of carbon nanowalls by changing ion energy with helicon-wave plasmas in low magnetic fields | Department of Electronic Engineering, Tohoku Univ. 1@*Morio Tetsuharu 1,Kato Toshiaki 1,Kaneko Toshiro 1, Hatakeyama Rikizo 1 |
| ’ | 4 | Effects of addition gases on structures of CNWs | Nagoya Univ. 1, Aichi Inst.of Tech. 2, Meijo Univ. 3, NU Eco-Engineering@4@*Takeuchi Wakana 1, Ura Masato 1, Tokuda yutaka 2, Hiramatsu Mineo 3, Kano Hiroyuki 4, Hori Masaru 1. |
| | 5 | Radical Density Measurements in VHF Plasma used for the Synthesis of Carbon Nanowalls | Meijo Univ. 1,Nagoya Univ. 2@*Kato Satoru,1 Sasaki Hajime,2 Takashima Seigo,2 Hiramatsu Mineo,1 Hori Masaru,2 |
| ’ | 6 | Morphology control of carbon nanowalls employing radical injection plasma enhanced CVD | Nagoya Univ. 1, KATAGIRI ENGINEERING Co., Ltd. 2, NU Eco-Engineering Co., Ltd. 3, Meijo Univ 4@*Maruyama Maruyama 1, Koji Yamakawa 2, Hiroyuki Kano 3, Mineo Hiramatsu 4, Masaru Hori 1 |
| | | Break 10:45`11:00 | |
| ’ | 7 | Etching Properties of Carbon Nanowalls Fabricated Using Radical Injection Plasma Enhanced CVD | Nagoya Univ. 1, Katagiri Eng. 2, Meijo Univ. 3@*Kondo Shingo 1, Yamakawa Koji 2, Hiramatsu Mineo 3, Hori Masaru 4 |
| | 8 | Synthesis of Carbon Nanowalls Using Electron Beam Excited Plasma-Enhanced Chemical Vapor Deposition | Meijo Univ.1,Katagiri Eng.2,Nagoya Univ.3@Mori Takateru1,Hiramatsu Mineo1,Yamakawa Koji2,Takeda Keigo3,Hori Masaru3 |
| | 9 | High Speed Growth of Carbon Nanowalls Using Radical Injection Plasam CVD | Katagiri Engineering CO.,LTD. 1, NUEco-Engineering CO.,LTD. 2, Meijyo Univ. 3, Nagoya Univ. 4@*Yamakawa Koji 1, Den Shyoji 1, Katagiri Toshiro 1, Kano Hiroyuki 2, Hiramatsu Mineo 3, Hori Masaru 4 |
| ’ | 10 | A First Trial of DMFC Stack Cell Using Catalytic-Metal-Particles Dispersed Arc-Soot | Toyohashi Univ. Technol. 1, ENAX, INC. 2, Daiken Chemical Co., Ltd. 3, Tokai Carbon Co., Ltd. 4, Futaba Corporation 5@*Kenji Shinohara 1, Keisuke Higashi 1, Yuki Izumi 1, Masanobu Yamamoto 1, Shinichiro Oke 1,Hirohumi Takikawa 1, Toshihiro Sakakibara 2, Sotaro Nakamura 2, Syuichi Sugawara 2, Nobuyoshi Aoyagi 3, Takashi Okawa 3, Kazuo Yoshikawa 4, Koji Miura 4, Shigeo Ito 5, Tatsuo yamaura 5 |
| | 11 | Increase in Electrochemical Capacity of Arc-Soot Electrode by RuO2 Dispersion | Toyohashi Univ. Technol. 1,Anhui Univ. Technol. 2,Futaba Corporation 3,Tokai Carbon Co., Ltd. 4@Yamamoto Masanobu 1,Higashi Keisuke 1,Shinohara Kenji 1,Oke Shinichiro 1,Takikawa Hirofumi 1,Xiaojun He 2,Itoh Shigeo 3,Yamaura Tatsuo 3,Miura Koji 4,Yoshikawa Kazuo 4 |
| | 12 | Pt modification on carbon nanofibers and tubes by barrel sputtering method | Univ. of Toyama 1,Hydrogen Isotope Research Center Univ. of Toyama 2@*Hirakawa Kazuki 1,Yamamoto Hironari 2,Akamaru Satoshi 2,Taguchi Akira 2,Abe Takayuki 2 |
| | | Lunch 12:30`13:30 | |
| 28p-ZR-@/ I,II,III
|
| | 1 | Ultra High Sensitive Sensing and Nanoprocessing Based on Micro/Nanoelectromechanical Systems | Tohoku Univ.@*Takahito Ono |
| | 2 | Diameter dependent dissipation of vibration energy of cantilevered multiwall carbon nanotube | Osaka Pref. Univ. 1, Osaka Univ. 2, CREST-JST 3@Shintaro Sawaya 1, Yoshikazu Nakayama 1,2,3, *Seiji Akita 1,3 |
| | 3 | Characterization of mechanical properties of a suspended carbon nanotube | Yokohama National Univ. 1,CREST/JST 2@*Ono Yuki 1,Oya Takahide 1,Ogino Toshio 1,2 |
| | 4 | Fabrication of Carbon-Nanotube / Metal-Particle Structures by Atomic Force Microscope Manipulation | Yokohama National Univ. 1, CREST/JST 2@*Kashiwase Yuta 1, Ikeda Takayuki 1, Oya Takahide 1, Ogino Toshio 1,2 |
| | 5 | Suspended Electrically Stable Multi-walled Carbon Nanotube Bridge Structure using Gold Migration | AIST1,Nihon Univ.2,TechnexLab.co.ltd3 , Hokkaido Univ.4@*H.Suga1,2,Y.Naitoh1,T.Ohno3 ,M.Tanaka1, Y.Nishioka2, H.Tokumoto4, T.Shimizu1 |
| ’ | 6 | Current-Induced Structural Change of Fullerene-Encapsulated Single Wall Carbon Nanotubes |
Osaka Pref.Univ. 1,Osaka Univ. 2,Handai FRC 3,CREST-JST
4 @*Somada Hiroshi 1, Yoshikawa Yuya 1, Nagataki Atuko 1 3, Akita Seiji
1 4, Nakayama Yoshikazu 1 2 3 4 |
| ’ | 7 | Plastic bending of double-wall carbon nanotubes | Osaka Pref. Univ. 1, Osaka Univ. 2, Center for Atomic and Molecular Technologies,Osaka Univ. 3, Ohio Univ. 4, CREST-JST 5@*Mori Hideki 1, Ogata Shigenobu 2,3, Li Ju 4, Akita Seiji 1,5, Nakayama Yoshikazu 2,5 |
| ’ | 8 | Analysis of thermal conductivity of C60-peapod by molecular dynamics simulation | Kyushu Univ. 1, RIAM, Kyushu Univ. 2@*Kawamura Takahiro 1, Kangawa Yoshihiro 2, Kakimoto Koichi 2 |
| | 9 | Effect of surface treatment of carbon nanofiber on tensile test characteristics of resin matrix composite | IIS The Univ. of Tokyo 1, Tokyo Inst. of Tech 2, Nagoya Univ. 3@*Kuzumaki Toru 1, Hayashi Yoshihiro 2, Ohtake Naoto 3, Mitsuda Yoshitaka 1 |
| | | Break 16:00`16:15 | |
| ’ | 10 | Fabrication of biosensor using carbon nanotube field-effect transisters with insulator | Dept. of Quantaum Eng. Nagoya Univ. 1, VBL Nagoya Univ. 2, Inst. for Advanced Research, Nagoya Univ 3@*Nakashima Yasuhiro 1, Ohno Yutaka 1, Kishimoto Shigeru 1,2, Okochi Mina 1, Honda Hiroyuki 1, Mizutani Takashi 1,3, |
| | 11 | CNT-FET biosensor which antibody directly immobilized on insulator |
Olympus Corp. 1, NEDO 2, CREST/JST 3 , Mitsubisi
Kagaku Iatron Inc. 4, AIST 5, Osaka Univ. 6@*Masuhiro Abe 1,2, Katsuyuki
Murata 1,2,3, Yasuo Ifuku 4, Mitsuaki Shimizu 5, Tatsuaki Ataka 1,2, Kazuhiko
Matsumoto 2,3,5,6 |
| | 12 | Fabrication of micro-flow biochip with carbon nanotube arrayed electrodes | ISIR, Osaka Univ. 1, NEDO 2, Mater. Sci. JAIST 3, PRESTO/JST 4@Tsujita Yuichi 1, Okuno Jun 1, *Maehashi Kenzo 1,2, Matsumoto Kazuhiko 1,2, Kwon Hyukchang 3, Takamura Yuzuru 3,4, Tamiya Eiichi 2,3 |
| | 13 | Development of Bio-Nano Sensor by Using CNT Compound Materials – Chemical Modification by Plasma-Activation Method – | Musashi Inst. of Technol.1, Saitama Small Enterprise Promotion Corporation (REDS Group/JST) 2, Saitama Univ. 3, Tohoku Univ. 4@*Hirata Takamichi 1, Amiya Shoji 1, Akiya Masahiro 1, Takei Osamu 2,3, Sakai Takafumi 3, Hatakeyama Rikizo 4 |
| | 14 | Development of a Odor Sensor Based on a Carbon Nanotube ∕ Polymer Composite Material (2) | Musashi Inst. of Technol.1, Tohoku Univ. 2@*Takeshi Kitamura 1, Tkamichi Hirata 1, Masahiro Akiya 1, Rikizo Hatakeyama 2 |
| | 15 | Fabrication of carbon nanotube thin films by wrapping with polymers and biomolecules | Yokohama National Univ. 1, CREST/JST 2@*Isono Toshinari 1, Fujita Masahiro 1, Oya Takahide 1, Ogino Toshio 1,2 |
| | 16 | Highly sensitive NO2 gas sensors made from single-wall carbon nanotube networks | NRI AIST 1@*Minami Nobutsugu 1, Karthigeyan Annamalai 1, Iakoubovskii Konstantin 1 |
| ’ | 17 | Voltammetry measurement using carbon nanotubes grown by plasma CVD | Nagoya Univ. 1, VBL, Nagoya Univ. 2, Inst. For Advanced Recearch, Nagoya Univ. 3@*Kojima Yoshihiro 1, Kishimoto Shigeru 1,2, Okochi Mina 1, Honda Hiroyuki 1, Mizutani Takashi 1,3 |
| Joint Session F: Physics
and Applications of Carbon Nanotubes |
| March 29 9:15`18:30 |
| 29a-ZR-@/ I,II,III |
| | 1 | Chirality-sensitive observation of CVD growth of single-walled carbon nanotubes by in-situ Raman spectroscopy | NTT Basic Research Labs. 1,Tokyo Univ. Sci. 2,CREST/JST 3 @*Yoshihiro Kobayashi 1,3,Masaya Tazawa 2,Daisuke Takagi 2,3, Yoshikazu Homma 2,3, Satoru Suzuki 1,3 |
| | 2 | Study on the CVD growth mechanism of carbon nanotube by in situ XPS (III) - growth using Fe catalyst- | NTT BRL 1, CREST/JST2@Maeda Fumihiko 1,2, Tokura Akio 1,2, Suzuki Satoru 1,2, Kobayashi Yoshihiro1,2 |
| | 3 | Analysis of Single Walled Carbon Nanotube Growth Process on Substrates using In-situ SEM Observation | Tokyo Univ. of Sci. 1, Meiji Univ. 2, JST-CREST 3@*Wako Iwao 1, Chokan Tomohito 1, Yamazaki Akira 2, Takagi Daisuke 1, Homma Yoshikazu 1, 3 |
| | 4 | In situ measurement of growth rate of carbon nanotube by optical microscopy | Toyota Central R&D Labs., Inc. 1@*Gunjishima Itaru 1, Inoue Takashi 1, Okamoto Atsuto 1 |
| | 5 | Ion beam irradiation and annealing on carbon-nanotube-dispersed polyimide thin film. |
The Univ. of Tokyo 1, RIKEN 2@*Hirao Hiroki 1,
Kobayashi Tomohiro 2, Meguro Takashi 2, Suzuki Akihiro 1, Terai Takayuki
1 |
| | 6 | Electrically conductive material made from CNT and PTFE mixture | Tokai Univ. 1@*Itabashi Hironori 1,Show Yoshiyuki 1 |
| | | Break 10:45`11:00 | |
| ’ | 7 | RT CNT Single Electron Transistor formed by RF Plasma | Meiji Univ. 1, Osaka Univ. ISIR 2, Univ. of Tsukuba 3, AIST 4, CREST/JST 5 @*Shin Iwasaki 1, Tamimura Kamimura 2,5, Masatoshi Maeda 3,5, Kazuhiko Matsumoto 2,4,5, Noboru Miura 1 |
| | 8 | Nano-catalyst formation and growth of Single-walled Carbon Nanotubes(2)Fabrication and characterization of single electron transistor. | RIKEN 1, TUS 2, CREST 3@*K.Iwasaki 1,2, M.Suzuki 1,3, S.Sato 1,2, Y.Homma 2,3 and K.Ishibashi 1,3 |
| | 9 | Characterization of SWCNT-SET fabricated by dispersion method with CMC surfactant | RIKEN 1,Tokyo Univ. of Science 2,CREST-JST 3@*Omura Kazuo 1 2,Mori Takahiro 1,Sato Shunsuke 1 2,Suzuki Masaki 1 3,Uchida Katsumi 2,Yajima Hirohumi 2,Ishibashi Koji 1 3 |
| | 10 | Sidegate control mechanism of Carbon Nanotube quantum dot on a GaAs/AlGaAs 2DEG substrate | RIKEN 1,TIT 2,CREST 3@*Mitsutoshi Makihata1,2, Takeo Uchida1,2, Satoshi Moriyama1, Masaki Suzuki3, Yoshinobu Aoyagi2, Kouji Ishibashi1 |
| | 11 | Observation of Multiple-Andreev Reflections in a Superconductor/SWNT/Superconductor Junction | RIKEN 1,TUS 2, CREST 3, Tsukuba Univ 4@*Shimizu Maki 12,Kanda Akinobu 3, Moriyama Satoshi 1,Homma Yoshikazu 24,Ootuka Youiti 3,Ishibashi Kouji 14 |
| | 12 | Electric and magnetic properties of 3d transition metal filled single walled carbon nanotubes |
Department of Applied Physics, Osaka Univ. 1,Center
for the Promotion of Research on Nanoscience and Nanotechnology, Osaka Univ.
2,Physics Department, De La Salle Univ. 3, Nanotechnology Research Center,
Fujitsu Laboratories Ltd. 4@*Kasai Koichiro 1,Melanie David 1, Mahmudur
Rahman 1, Diño Wilson 2,3, Hiroshi Nakanishi 1, Mamoru Sakaue 4,
Hideaki Kasai 1 |
| | | Lunch 12:30`13:30 | |
| 29p-ZR-@/ I,II,III
|
| | 1 | Excited energy transfer from encapsulated molecules to single-wall carbon nanotubes | NRI-AIST 1, Univ. of Tokyo 2, Tokyo Metro. Univ. 3@Kazuhiro Yanagi 1, Konstantin Iakoubovskii 1, Hiroyuki Matsui 2, Hiroyuki Matsuzaki 2, Hiroshi Okamoto2, Yasumitsu Miyata 3, Yutaka Maniwa 3, Nobutsugu Minami 1, Hiromichi Kataura 1 |
| ’ | 2 | Transmission Characteristics of SOI Waveguide with CNT | Waseda Univ.@*Karasawa Chiaki,Arakaki Akihiro,Utaka Katuyuki |
| | 3 | Photoluminescence measurement of single-walled carbon nanotubes in the environmental chamber | Tokyo Univ. of Science 1, JST-CREST 2@Chiashi Shohei 1, Watanabe Satoshi 1, Ishiguro Masashi 1, Hanashima Tateki 1, Homma Yoshikazu 1,2 |
| | 4 | Excitation Power Dependence of Luminescence Intensity of Individual Single Walled Carbon Nanotubes | Tokyo University of Science 1,JST-CREST 2@*S. Watanabe 1, S. Ina 1, S. Chiashi 1, E. Tokunaga 1, Y. Homma 1,2 |
| | 5 | Photoluminescence property from carbon nanotube sheet modified with DNA | Yokohama National Univ. 1, CREST/JST 2, Tokyo Univ. Science 3@*Kuribayashi Hironori 1, Isono Toshinari 1, Ogino Toshio 1,2, Watanabe Satoshi 3, Chiashi Shohei 3, Honma Yoshikazu 2,3 |
| | 6 | Excitonic transition energies in carbon nanotubes – Dependence on environmental dielectric constant | Nagoya Univ. 1, PRESTO/JST 2, Univ. of Tokyo 3, Inst. Adv. Res. Nagoya Univ. 4@Shinya Iwasaki 1, *Yutaka Ohno 1 2, Yoichi Murakami 3, Shigeru Kishimoto 1, Shigeo Maruyama 3, Takashi Mizutani 1 4 |
| ’ | 7 | Direct observation of the photoluminescence and the morphology from the individual carbon nanotubes under stretching | Keio Univ. 1, RIKEN 2@Hideyuki Maki 1, Tetsuya Sato 1, Koji Ishibashi 2 |
| | 8 | Raman characterization of isolated double-walled carbon nanotubes | Kyoto Institute of Technology 1, Wakayama Univ. 2@*Matsumoto Kazuyo 1, Murakami Toshiya 1, Tokuda Takahiro 1, Kisoda Kenji 2, Isshiki Toshiyuki 1, Harima Hiroshi 1 |
| | 9 | Direct observation of Double walled Carbon Nanotube by UHV-STM | Dept. of Chemistry, Nagoya Univ. 1,Inst. for Adv. Res., Nagoya Univ. 2, CREST/JST 3 @*Nobuyuki Fukui 1,Hiromichi Yoshida 1,Toshiki Sugai 1,Hisanori Shinohara 1,2,3 |
| | | Break 15:45`16:00 | |
| ’ | 10 | Synthesis of carbon nanotubes by the radical CVD with CO2 (II) | Waseda Univ. 1,MIRAI-Selete 2@*Tasuku Maki 1,Takayuki Iwasaki 1,Tsuyoshi Yoshida 1,Takumi Aikawa 1,Tatsuhiro Nozue 2,Daiyu Kondo 2,Akio Kawabara 2,Shintaro Sato 2,Mizuhisa Nihei 2,Yuji Awano 2,Hiroshi Kawarada 1 |
| | 11 | Development of a growing apparatus of Carbon Nanotubes for Σ 300 mm wafer and wiring in the Via Hole | Tsukuba ISM, ULVAC Inc.@*Nakano Haruhisa 1, Murakami Hirohiko 1 |
| | 12 | Low temperature growth of carbon nanotube using triode type RF plasma CVD method | Tokai Univ. 1,Tokai Univ. 2@*Koizumi Keita 1,Show Yoshiyuki 2 |
| | 13 | Synthesis of vertically aligned and diameter-controlled carbon nanotubes from Fe-(V,Ti)-O nanoparticles | Toyota Central R&D Labs., Inc. 1, Nagoya Inst. Technol. 2@*Gunjishima Itaru 1, Inoue Takashi 1, Yamamuro Saeki 2, Sumiyama Kenji 2, Okamoto Atsuto 1 |
| | 14 | Growth Control of Carbon Nanotube Thin Films Using Iron Catalysts Supported by Porous Silica Layers | Yokohama National Univ 1,CREST/JST 2@*Chiba Hidejiro 1,Hadama Yasuhito 1,Oya Takahide 1,Ogino Toshio 1,2 |
| £ | 15 | Synthesis of carbon nanotubes by plasma-enhanced hot filament chemical vapor deposition | Toyota Technological Institute@*Chien-Chao Chiu, Masamichi Yoshimura, Kazuyuki Ueda |
| £ | 16 | Electrochemical growth of Pd nanostructures for the synthesis of multiwalled carbon nanotubes | Toyota Tech. Inst. 1@Rakesh K. Joshi 1, Masamichi Yoshimura 1, Kazuyuki Ueda 1 |
| ’ | 17 | Synthesis of carbon nanotubes from Ni catalysts implanted by focused ion beam | Waseda Univ. 1@*Iwasaki Takayuki 1, Koide Takashi 1, Morikane Ryota 1, Mejima Soichi 1, Nakayama Hideki 1, Shinada Takahiro 1, Ohdomari Iwao 1, Kawarada Hiroshi 1 |
| | 18 | Synthesis of Graphitic Nanotubes by Microwave Plasma Chemical Vapor Deposition | Corporate Manufacturing Engineering Center Toshiba Corporation 1@*Kuboi Shuichi 1, Yamage Masashi 1 |
| | 19 | Study of Novel Techniques for Carbon Nanotubes by Carbon Transmitting Method | Sumitomo Electric Ind. Ltd. 1, Tech. Research Inst. of Osaka Pref. 2, Kyoto Univ. 3@*Takeshi Hikata 1, Kazuhiko Hayashi 1, Ken-ichi Sato 1, Tomoyuki Mizukoshi 2, Yoshiaki Sakurai 2, Itsuo Ishigami 2, Takaaki Aoki 3, Toshio Seki 3 and Jiro Matsuo 3 |
| Joint Session F: Physics
and Applications of Carbon Nanotubes |
| March 30 9:00`15:15 |
| 30a-ZR-@/ I,II,III |
| | 1 | Relation between channel length and on/off current ratio of spin-coated CNT-film FET | NEC Crop.@*Hiroo Hongo, Masahiko Ishida, Fumiyuki Nihey |
| | 2 | Device Fabrication and Characterization of Spin-on CNT Transistors on Plastic Substrates | NEC Fundamental and Environmental Res. Labs.@*M. Ishida, S. Toguchi, H. Hongo, F. Nihey |
| | 3 | Metallic CNT-tolerant Design for CNT Transistors | Fundamental and Environmental Res. Labs., @*M. Ishida, F. Nihey |
| | 4 | Factors Affecting on Electronic Properties of CNTs-FETs | Graduate School of Science Tohoku Univ. 1, Graduate School of Engineering Tohoku Univ. 2@*Tanigaki Katsumi 1, Kumashiro Ryotaro 1, Hiroshiba Nobuya 1, Ohashi Hirotaka 1, Hatakeyama Rikizo 2 |
| | 5 | Current control of SWNTs by Local Ferroelectric Polarization of P(VDF/TrFE) Thin Films III | Kyoto Univ. 1, Kyoto Univ. IIC 2, CREST/JST 3@Nishio Taichi 1, Miyato Yuji 1, Kobayashi Kei 2, Matsushige Kazumi 1, Yamada Hirofumi 1 3 |
| ’ | 6 | Properties of Alkali-Metal/Halogen Encapsulated Single-Walled Carbon Nanotubes | Department of Electronic Engineering, Tohoku Univ. 1,Graduate School of Environmental Studies, Tohoku Univ. 2@*Shishido Jun 1,Kato Toshiaki 1,Oohara wataru 1,Hatakeyama Rikizo 1,Tohji Kazuyuki 2 |
| £’ | 7 | Room-temperature negative differential resistance in C60, C70, and C84 encapsulated double-walled carbon nanotubes | Department of Electronic Engineering, Tohoku University@Yongfeng Li 1, Toshiro Kaneko 1, Rikizo Hatakeyama 1 |
| | | Break 10:45`11:00 | |
| | 8 | Transport Characterization of Carbon Nanotube Field-Effect Transistors with Passivation Films by Ion Irradiation | ISIR, Osaka Univ. 1, CREST/JST 2, AIST 3@Nishiguchi Kohei 1, 2, *Maehashi Kenzo 1, 2, Ohno Yasuhide 1, 2, Inoue Koichi 1, 2, Yamamoto Kazuhiro 2, 3, Matsumoto Kazuhiko 1, 2, 3 |
| ’ | 9 | Effects of Neutral Beam Irradiation for Carbon Nanotubes (3) | Inst. Fluid Sci., Tohoku Univ. 1, Grad. School Environmental Studies, Tohoku Univ. 2, NEC 3@*Okumura Keiji 1, Wada Akira 1, Sato Yoshinori 2, Ishida Masahiko 3, Nihey Fumiyuki 3, Tohji Kazuyuki 2, Samukawa Seiji 1 |
| | 10 | Recovery of low-energy irradiation damage in SWNTs | NTT Basic Res. Labs. 1, CREST/JST 2@*Satoru Suzuki 1,2, Yoshihiro Kobayashi 1,2 |
| | 11 | Property Control of CNT-FETs and SETs by low-energy irradiation | NTT Basic Res. Labs. 1,Yokohama Natfl Univ. 2, JST-CREST 3@Property Control of CNT-FETs and SETs by low-energy irradiation |
| | 12 | Soft x-ray photoelectron spectroscopy study of atomic hydrogen exposure on carbon nanotubes | NTT BRL 1,Tokyo Univ. of Science 2,JAEA 3,JASRI 4,CREST/JST 5@*Tokura Akio 1,5,Maeda Fumihiko 1,5,Takagi Daisuke 2,5,Homma Yoshikazu 2,5,Yoshigoe Akitaka 3,Teraoka Yuden 3,Watanabe Yoshio 4,Kobayashi Yoshihiro 1,5 |
| | 13 | Characterization of carbon nanotube field-effect transistors with insulator |
ISIR, Osaka Univ. 1, CREST/JST 2@*Asai Yoshihiro
1,2 Ohno Yasuhide 1,2, Maehashi Kenzo 1,2 Inoue Koichi 1,2 Matsumoto Kazuhiko
1,2 |
| | | Lunch 12:30`13:15 | |
| 30p-ZR-@/ I,II,III
|
| | 1 | Fabrication of Carbon Nanotubes by Laser Ablation of Carbon Micro-beads | Doshisha Univ. 1@*Benten Katsunori 1,Nishida Yuichi 1,Takano Hiroshi 1, Itoh Masayuki 1 |
| | 2 | Synthesis of carbon nanotubes by an arc discharge in bubble | Tokyo Univ. of Science@Nishikawa Eiichi,Kim Yon-el,Shimizu Hiroshi,Kioka Toshihide |
| | 3 | Direct Growth of Single Carbon Nanofiber onto W tip induced by Ion Irradiation | Nagoya Inst.Technol 1, Olympus Co.Ltd. 2 @Yoshitaka Sugita 1, Junya Tanaka 1, Masasi Kitazawa 1,2, Masaki Tanemura 1, Ryo Ota 2 |
| | 4 | Morphology Control of Ion-Induced Carbon Nanofibers Grown at Room Temperature: Effect of Ion Species | Nagoya Inst.Technol 1, Olympus Co.Ltd. 2@*Yamaguchi Kohei 1, Sugita Yositaka 1, Tanaka Junya 1, Tanemura Masaki 1, Kitazawa Masasi 1,2 |
| | 5 | Trial for Synthesis of Carbon Nanotubes without Carbon Source of Gas Phase | Nippon Inst. of Tech. 1@Iwasaki Takuma 1, *Ishikawa Yutaka 1 |
| | 6 | TEM obsevation of carbon nanotube pattern on SiC(000-1) using Ti mask | Dept. of Materials Science & Engineering, Meijo Univ. 1, Meijo Univ. 21st CENTURY COE program "Nano Factry" 2, Japan Fine Ceramics Center 3@*Y. Hozumi 1, Y. Yamamoto 2, M. Mori 1, T. Maruyama 1,2, S. Naritsuka1,2, M. Kusunoki 3 |
| ’ | 7 | Control of carbon-nano structure by thermal decomposition on SiC with Hydorogen | RIE Shizuoka Univ. 1,@*Ogawa Yasuhiro 1,Tkata Yuuji 1,Hashimoto Yoshitaka 1,Guogiang Zhang 1,Nakamura Atushi 1,Tanaka Akira 1,Temmyo Jiro 1, |
| | 8 | Self-Organized Structural Formation on Si Surface by Utilizing Ferroin Solution | Yokohama National Univ. 1@*Oya Takahide 1, Ogino Toshio 1 |
| Joint Session G: Fundamentals
and Applications of Quantum Information Technology |
| March 27 9:00`12:00 |
| 27a-M-@/ I,III |
| | 1 | Generation of narrowband photon-pairs at 1550nm band | Nihon Univ. 1, NIMS 2@*Fujii Go 1, Namekata Naoto 1, Kurimura Sunao 2, Inoue Shuichiro 1 |
| | 2 | Polarization-stabilization of quantum correlated photon-pair source using Faraday Rotator Mirror | SIT 1,NTT BRL 2,JST CREST 3@*Hashimoto Takuro 1,2,Takesue Hiroki 2,3,Horiguchi Tsuneo 1 |
| | 3 | Quality evaluation of a parametric down converted photons in the telecom wavelength | AIST 1, JST-CREST 2@Satoru Odate 12, Akio Yoshizawa 12, Hidemi Tsuchida12 |
| | 4 | Quantum state tomography for time-bin entangled photon pairs | Osaka Univ. 1, NTT Basic Research Labs. 2, JST-CREST 3@*Noguchi Yuita 1,2,3, Takesue Hiroki 2,3 |
| | 5 | 1.5-um band Hong-Ou-Mandel experiment using photon pairs generated in two independent optical fibers | NTT Basic Research Laboratories 1, JST CREST 2@Takesue Hiroki 1,2 |
| | | Break 10:15`10:30 | |
| | 6 | Reliability tests of gated-mode single-photon detectors operating at 1550 nm using correlated photons |
AIST 1, JST-CREST 2@*Yoshizawa Akio 1,2, Daiji
Fukuda 1, Odate Satoru 1,2, Tsuchida Hidemi 1,2 |
| | 7 | Direct measurement of non-Poissonian distribution by CIPD at telecom wavelengths | NICT 1@Fujiwara Mikio 1, Sasaki Masahide 1 |
| | 8 | Differential-phase-shift quantum key distribution with decoy pulses | Osaka Univ. 1,JST-CREST 2@*Hayashi Shusaku 1,2,Inoue kyo 1,2 |
| | 9 | Wavelength-Multiplexed and Quantum-Repeatered Fiber Network Architecture for Distribution of Quantum Entanglement | Univ. Tokyo, RCAST@*Lim Han Chuen 1, Kikuchi Kazuro 1 |
| | 10 | Quantum Non-Demolition Measurement of a Superconducting Flux Qubit | NTT Basic Research Labs. 1, TU Delft 2, ENS Paris 3@*Saito S. 1,2, Lupascu A. 2,3, Picot T. 2, Groot P. C. de 2, Harmans C. J. P. M. 2, Mooij J. E. 2 |
| ’ | 11 | Generation of number state by superconducting LC resonator | NTT BRL 1, Tokyo university of science 2, JST-CREST 3@*Kakuyanagi Kosuke 1,3, Kagei Seiichiro 2,3, Saito Shiro 1,3, Nakano Hayato 1,3, Semba Kouichi 1,3, Takayanagi Hideaki 2,3 |
| Joint Session K: Zinc Oxide
and Related Functional Materials |
| March 27 9:30`18:00 |
| 27a-ZN-@/ I,II |
| | 1 | Growth of vertically aligned narrow ZnO nanorods using two-step growth temperature method | Univ. of Tokyo 1, JST SORST 2, POSTECH 3@*Kitamura Kokoro 1, Yatsui Takashi 2, Nakamata Tohru 1, Ohtsu Motoichi 1,2, G. C. Yi 3 |
| | 2 | lattice-strain and a growth mode of surface nano-wire structures in nonpolar ZnO | Osaka Univ 1,Osaka Univ.,Univ. of Tokyou 3@*Matsui Hiroaki 1,Tabata Hitoshi 2 |
| | 3 | Preparation of ZnO Nanowires by Atmospheric-pressure Chemical Vapor Deposition Using Au Nanoparticles as Catalyst (II) | Ehime Univ.@Tomoaki Terasako 1, Ishizaki Masahiro 1, Senda Yuu 1, Miyata Akira 1, Shirakata Sho 1 |
| | 4 | Growth of ZnO nanostructures by Ultrasonic Spray CVD using Au catalyst | Kyoto Univ. 1, Kyoto Univ. IIC 2@*Nishinaka Hiroyuki 1, Kawaharamura Toshiyuki 1, Fujita Shizuo 2 |
| £ | 5 | Vertically Aligned Growth of Uniquely Shaped ZnO nanonails by Catalyst-Free Pulsed-Laser Ablation Deposition | Fudan Univ. 1,Kyushu Univ. 2@*Guo Ruiqian 1,Nishimura Jun 2,Ueda Makoto 2,Higashihata Mitsuhiro 2,Okada Tatsuo 2 |
| | | Break 10:45`11:00 | |
| | 6 | Selective growth of ZnO nanorod on patterned SiO2 substrate using catalysts-free MOVPE method | Univ. of Tokyo 1,SORST JST 2,POSTECH 3@Nakamata Tohru 1,Kitamura Kokoro 1,Yatsui Takashi 2,Gyu-Chul Yi 3,Ohtsu Motoichi 1,2 |
| | 7 | Zinc Oxide Nanorod Membrane Using the Template Method. | Tokyo Polytechnic Univ. 1,@Shiraishi Ryuji 1,Yamada Katsumi 1,Urabe Shigeharu 1 |
| | 8 | Growth of ZnO - Cr micro mixed crystals by the Electric Current Hearting process | Nagaoka Univ 1@*Shimoda Keiichi 1, Yasui Takanari 1, Kuroki Yuichiro 1, Takata Masasuke 1 |
| ’ | 9 | Fabrication of nanoporous zinc oxide films by anodization | Kogakuin Univ. 1@*Hidetaka Asoh 1, Yuta Kobayashi 1, Sachiko Ono 1 |
| | 10 | Controlling the near-field optical coupling between ZnO nanorod double-quantum-well structures | SORST JST 1,Ricoh Co. Ltd. 2,POSTECH 3,Univ. Tokyo@Yatsui Takashi 1,Sangu Suguru 2,Kawazoe Tadashi 1,Yoo Jinkyoung 3,An Sung-Jin 3,Yi Gyu-Chul 3,Ohtsu Motoichi 1,4 |
| | 11 | Wavelength-tunable UV lasing in ZnMgO nanoneedles |
Nagoya Inst Technol 1, Nanyang Tech Univ 2 @Norihiro
Ide 1, Hokuto.Hatano 1, Tatuhiko Okita 1, Msaki.Tanemura 1, Lay.Miao 1,
Sake Tanemura 1, S.P Lau 2, H.Y.Yang 2 |
| | | Lunch 12:30`13:30 | |
| 27p-ZN-@/ I,II |
| | 1 | Electrical properties of ZnO films grown on sapphire substrates evaluated by double layer model | Waseda Univ. 1@*Katsuya Hirano 1, Tomohiro Kosaka 1, Miki Fujita 1, Atsushi Kawaharazuka 1, Yoshiji Horikoshi 1 |
| | 2 | Photocurrent of ZnO single crystal surfaces | Akita Prefectural Univ. 1@Yamaguchi Hiroyuki 1, Nagaoka Jun 1, Komiyama Takao 1, Aoyama Takashi 1 |
| £ | 3 | Effect of Crystal Polarity on Nitrogen Chemical States in ZnO:N | Graduate School of Electronic Science and Technology, Shizuoka Univ. 1, R.I.E., Shizuoka Univ. 2@*Gangil Sandip 1, Adachi Masahiko 2, Nakamura Atsushi 2, Aoki Toru 1,2, Temmyo Jiro 1,2 |
| | 4 | X-ray topography and photoluminescence of ZnO single crystal | Miyazaki Univ.@1, Okayama Univ. of Sci.@2, Tohoku Univ.@3 @*Kenji Yoshino 1, Minoru Yoneta 2, Ichiro Yonenaga 3 |
| | 5 | Structural characterization of MgO/c-Al2O3 interfaces | Center for Interdisciplinary Research(CIR), Tohoku Univ. 1, Inst. for Materials Research(IMR), Tohoku Univ. 2, Japan Synchrotron Radiation Research Inst.(JASRI) 3, Saga light source 4@@*Tsutomu Minegishi 1, Takashi Hanada 2, Park Seunghwan 1, Kazushi Sumitani 3,4, Osami Sakata 3, Cho Meoungwhan 2, Takafumi Yao 1,2 |
| ’ | 6 | Internal electric field in wurtzite ZnO/Zn0.55Mg0.45O multiple-quantum wells | RIEC Tohoku Univ@*Belmoubarik Mohamed@, Ohtani Keita@, Ohno Hideo |
| | 7 | Analysis of ZnO by Cathodoluminescence and Raman Spectroscopy | Toray Research Center, Inc. 1@*Keiko Inoue 1, Masanobu Yoshikawa 1 |
| | 8 | Characterization of crystal strain and Mg-related local vibrational mode in Zn1-xMgxO alloy by Raman study | Kyoto Inst.Tech. 1,Wakayama Univ. 2@*Katoh Hiroyuki 1, Hasuike Noriyuki 1, Deguchi Ryosuke 1, Kisoda Kenji 2, Harima Hiroshi |
| | 9 | Lattice strain in ZnO films grown on MgO/c-sapphire |
Tohoku Univ.IMR 1,Tohoku Univ.CIR 2, X-ray Research
Lab. Rigaku Co.,Ltd.3@Seunghwan Park 1, Tsutomu Minegishi 1, Jinsub Park
1, Inho Im 1, Katsuhiko Inaba 3, Meoungwhan Cho 2, Takafumi Yao 1,2 |
| | | Break 15:45`16:00 | |
| | 10 | Influence of post-annealing on the morphology and optical properties of Er -doped ZnO thin films | NIT1,JFCC2@L. Miao *1, F.Y.Yong1, S.Tanemura2, M. Tanemura1, S.Tanaka1, N.Shibata2 |
| | 11 | Optical response in Zn1-xCoxO magnetic alloy: a modulation of band-gap | Osaka Univ. 1,Osaka Univ. 2,Univ. of Tokyo 3@Xiao Zhiyan 1,Matsui Hiroaki 2,Tabata Hitoshi 1,3 |
| | 12 | Characterization of piezoelectricity of ZnMnO film Grown by Pulsed Laser Deposition | Osaka Pref. Univ 1@Sakiyama Haruka 1, Oshio Takeshi 1, Masuko Keiichiro 1, Yoshimura Takeshi 1, Ashida Atsushi 1, Fujimura Norihumi 1 |
| | 13 | Anti-ferromagnetic interaction in ZnMnO paramagnetic thin films | Osaka Prefecture Univ. 1@Masuko Keiichiro 1, Ashida Atushi 1, Yoshimura Takeshi 1, Fujimura Norifumi 1 |
| | 14 | Analysis of local structure around Mn atoms in pseudomorphic ZnMnO/ZnO epitaxial films | Grad. school of Eng., Nagoya Univ. 1,VBL, Nagoya Univ. 2, Grad. school of Eng., Osaka Pref. Univ. 3@*Oda Yasufumi 1,Masuko Keiichiro 2,Tabuchi Masao 2,Fujimura Noriyuki 2,Takeda Yoshikazu 1 |
| | 15 | Characterization of Visible-Light Photocatalyst using ZnO Fiber by Fluorescence Spectrophotometer | Sendai Nat. College of Tech. 1,Miyagi Nat. College of Tech. 2, IMR, Tohoku Univ.3@Haga Koichi 1,Sasaki Masaaki 1,Sato Tomoaki 2,Yubuta Kunio 3,Shishido Toetsu 3 |
| | 16 | Electron microscopy observations of ZnO synthesized by "organic-inorganic conversion" | IMR, Tohoku Univ. 1,Miyagi Nat. College of Tech. 2, Sendai Nat. College of Tech. 3@*Kunio YUBUTA 1, Akiko NOMURA 1, Tomoaki SATO 2, Koichi HAGAI 3, Toetsu SHISHIDO 1 |
| | 17 | Photocatalytic properties of zinc oxide synthesized by "organic-inorganic conversion" | Miyagi Nat. College of Tech. 1, Sendai Nat. College of Tech. 2, IMR, Tohoku Univ. 3@*Tomoaki Satoh 1, Koichi Haga 2, Kunio Yubuta 3, Masaaki Sasaki 2, and Toetsu Shishido 3 |
| Joint Session K: Zinc Oxide
and Related Functional Materials |
| March 28 9:45`17:15 |
| 28a-ZN-@/ I,II |
| | 1 | Growth of ZnO Thin Film Grown by Spray Pyrolysis Method | Miyazaki Univ. 1, Okayama Univ of Sci. 2@*Yoshino Kenji 1, Oyama Satoshi 1, Ikari Tetsuo 1, Yoneta Minoru 2 |
| | 2 | Effect of thermal treatment of In-doped ZnO thin film by spray pyrolysis method | Miyazaki Univ. 1, Okayama Univ of Sci. 2@*Oyama Satoshi 1, Yoshino Kenji@1, Ikari Tetsuo 1, Yoneta Minoru 2 |
| | 3 | Optical property of In-doped MgZnO/glass by spray pyrolysis method | Okayama Univ.of Science 1, Miyazaki Univ. 2@Motoyuki Shintani 1, Minoru Yoneta 1, Kenji Yoshino 2, Hiroki Ichitani 1, Masakazu Ohishi 1, Hiroshi Saito 1 |
| | 4 | Fabrication of In doped ZnO thin films by spray pyrolysis method | Tokyo Metro Univ.@*Takahashi Kenji 1,Fukushima Toshihiko 1,Sugawara Hiroharu 1 |
| | 5 | Annealing Effects of In doped ZnO thin film by spray pyrolysis | Tokyo Metro.Univ.@Toshihiko Fukushima 1,Kenji Takahashi 1,Hiroharu Sugawara 1 |
| | | Break 11:00`11:15 | |
| ’ | 6 | Preparation of single-crystalline ZnO thin films by fine channel mist CVD method. | Dept. Elec. Sci. & Eng., Kyoto Univ. 1, Ceramic Forum Co. 2, Int. Innovation Center, Kyoto Univ. 3@*Kawaharamura Toshiyuki 1, Nishinaka Hiroyuki 1, Masuda Yoshio 2, and Fujita Shizuo 3 |
| | 7 | Growth of ZnO and Zn1-xMgxO films by liquid phase epitaxy method | Mitsubishi Gas Chemical CO .,INC. 1. NIMS 2.@*Jun Kobayashi1. Hideyuki Sekiwa 1. Miyuki Miyamoto 1. Naoki Ohashi 2. Isao Sakaguchi 2. Yoshiki Wada 2. |
| | 8 | Epitaxial growth of ZnO thin films by electrochemical deposition method | Graduate School of Engineering, Osaka Prefecture Univ.@*Atsushi Ashida, Akio Fujita, Koutaro Norimasa, Keiichiro Masuko, Takeshi Oshio, Takeshi Yoshimura, Norifumi Fujimura, Atsushi Nakahira |
| | 9 | Crystal orientation of electrochemically deposited ZnO thin films (II) |
Wakayama Univ. 1, ITC of Wakayama Pref. 2@*Kanda
Tadayuki 1, Aisu Masashi 1, Asaoka Takayuki 1, Ina Tutomu 1, Tanaka Ichirou
1, Uno Kazuyuki 1, Yamashita Munenori 2 |
| | 10 | Fabrication of ZnO using Electrolytic Deposition between Micron-gap Electrodes | OMRON Corp. 1,Int Innovation Center,Kyoto Univ. 2@*Reiko Hattori 1,Hiroshi Imamoto 1,Keisuke Kametani 2,Shizuo Fujita 2 |
| | | Lunch 12:30`13:30 | |
| 28p-ZN-@/ I,II |
| | 1 | ZnO film grown by MOCVD method equipped with the laser heating system [II] | NIMS 1, JST-CREST 2, Univ. of Tokyo 3, Univ. of Tokyo 4@*Fujimoto Eiji 1,2, Sumiya Masatomo 1,2, Lippmaa Mikk 3, Ohnishi Tsuyoshi 3, Koinuma Hideomi 1,2,4 |
| | 2 | Epitaxial growth of ZnO films prepared by MO-CVD using Zn(C9H15O3)2 | Sendai Nat. College of Tech. 1,Ube Indust. Ltd. 2@*Chiba Tetsuya 1,Onodera Hisashi 1,Haga Koichi 1,Kadota Takumi 2,Hasegawa Chihiro 2 |
| ’ | 3 | Dependency of radio frequency power for deposition of ZnO system thin film by remote plasma enhanced-MOCVD. | Res.Inst.of Electronics,Shizuoka Univ.@*Tsuboi Takako 1,Ohashi Toshiya 1,Yamamoto Kenji 1,Hayashi Takao 1,Nakamura Atsushi 1,Temmyo jiro 1 |
| | 4 | Preparation of polycrystalline ZnO thin films on glass substrate by metal organic molecular beam deposition method (II) | Ehime Univ. 1@Shinji Yudate, Shinichirou Yura, Yousuke Ishiko, Akira Miyata, Tomoaki Terasako, Sho Shirakata |
| | 5 | Optical Properties of ZnO Films Grown by Atmospheric-pressure Chemical Vapor Deposition Using Zn and H2O as Source Materials | Ehime Univ. 1, Takuma National College of Technology 2@Terasako Tomoaki 1, Matsuura Hidekazu 1, Kataoka Tomomi 2, Miyata Akira 1, Yagi Masakazu 2, Sho Shirakata 1 |
| ’ | 6 | Effects of buffer layer for ZnO film rapid growth using MOVPE | Kyoto Univ. VBL 1, IIC 2@Maejima Keigou 1, Fujita Shizuo 2 |
| | 7 | Study for epitaxial growth of non-polar ZnO and GaN using DFT and kMC | Tottori Univ. 1, Univ. Tokyo 2, KAST 3@*Ishii Akira 1, Fujiwara Katsutosi 1, Oda Yasuhiro 1, Kobayashi Atsushi 2, Fujioka Hirosi 2,3 |
| | | Break 15:15`15:30 | |
| £ | 8 | Characteristics of Zinc Oxide Thin Films Prepared by Radio Frequency Magnetron Sputtering | Kochi Univ. of Tech.1,Kochi IPC 2, Kochi Casio Co. Ltd. 3@*Li Chaoyang 1,2,Hiramatsu Takahiro 2,3, Matsuda Tokiyoshi 1,2, Furuta Hiroshi 1,2, Furuta Mamoru 1,2, Hirao Takashi 1,2 |
| | 9 | Influence of buffer layer on the crystallinity of sputter-deposited ZnO films | KUT 1, Kochi IPC 2, Kochi CASIO 3, CASIO 4@*Matsuda Tokiyoshi 1,2, Furuta Mamoru 1,2, Hiramatsu Takahiro 2,3, Furuta Hiroshi 1,2, Hokari Hitoshi 4, Li Chaoyang 1,2, Hirao Takashi 1,2 |
| | 10 | RBS analysis of ply-ZnO thin films prepared by RF-magnetron sputtering | Kochi Univ. of Tecnol. 1,Kochi IPC 2,KOCHI CASIO 3@*Takashige Yumeji 1,Matsuda Tokiyoshi 1,2,Hiramatsu Takahiro 2,3,Nebiki Takuya 1,Shimokata Akihiro 2,Furuta Hiroshi 1,2,Furuta Mamoru 1,2,Hirao Takashi 1,2,Narusawa Tadashi 1 |
| | 11 | Phosphorus doped ZnO film by RF sputtering | Tokyo University of Science 1@*Ryoji Yokosawa 1. Akio Furukawa 1 |
| | 12 | Structural analysis of ZnO thin films grown by molecular beam deposition | Univ. of Yamanashi 1, Yamanashi Industrial Tech. Center 2, Nakaya Corp. 3@*T. Muranaka 1, T. Uehara 1, T. Sakano 1, Y. Nabetani 1, T. Akitsu 1, T. Kato 1, T. Matsumoto 1, S. Hagihara 2, O. Abe 2, S. Hiraki 3 and Y. Fujikawa 3 |
| | 13 | Impact of surface pre-treatment on zinc oxide growth by atomic layer deposition | Research Inst., Kochi Univ. of Tech.@*Hisao Makino, Seiichi Kishimoto, Takahiro Yamada, Aki Miyake, Naoki Yamamoto, Tetsuya Yamamoto |
| | 14 | Fabrication of ZnO:Sb Thin Film by PLD method | Akita Prefectural Univ. 1@Yanagisawa Hideyuki 1,Yamaguchi Hiroyuki 1,Komiyama Takao 1,Aoyama Takashi 1 |
| Joint Session K: Zinc Oxide
and Related Functional Materials |
| March 30 9:15`14:30 |
| 30a-ZC-@/ I,II |
| | 1 | Preparation of ZnO:Ga thin films by helicon-wave-excited-plasma sputtering method | Tokyo Univ. of Science 1, Univ. of Tsukuba 2@*S.Masaki 1, A.Murayama 1, H.Nakanishi 1, M.Sugiyama 1, S.F.Chichibu 2 |
| | 2 | Residual Stress in Low Resistivity Ga-Doped ZnO Thin Films Prepared by Reactive Plasma Deposition | Research Inst., Kochi Univ. of Tech.@*Naoki Yamamoto 1, Takahiro Yamada 1, Aki Miyake 1, Seiichi Kishimoto 1, Hisao Makino 1, Tetsuya Yamamoto 1 |
| ’ | 3 | In-Plane Orientation of Low Resistivity Ga-Doped ZnO Thin Films on Glass Substrate Prepared by Reactive Plasma Deposition | Research Inst., Kochi Univ. of Tech.@*Takahiro Yamada 1, Aki Miyake 1, Seiichi Kishimoto 1, Hisao Makino 1, Naoki Yamamoto 1, Tetsuya Yamamoto 1 |
| | 4 | Effect of thermal treatment on poly crystalline Ga-doped ZnO films prepared by reactive plasma deposition ( RPD ) |
Res. Inst. Kochi Univ. Tech., 1, Toukai optical
2@*Tetsuhiro Arimitsu 1, Toshiyuki Morizane 1, Seiichi Kishimoto 1, Tetsuo
Kozaki 2, Takahiro Yamada 1, Aki Miyake 1, Hisao Makino 1, Naoki Yamamoto
1, Tetsuya Yamamoto 1 |
| | 5 | Electromagnetic wave shielding of polycrystalline Ga-doped ZnO films prepared by reactive plasma deposition | Res. Inst., Kochi Univ. Tech. 1,Tokai Optical. 2@*Morizane Toshiyuki 1,Arimitsu Tetsuhiro 1,Kishimoto Seiichi 1,Kozaki Tetsuo 2,Yamada Takahiro 1,Makino Hisao 1,Miyake Aki 1,Yamamoto Naoki 1,Yamamoto Tetsuya 1 |
| | | Break 10:30`10:45 | |
| | 6 | Preparation of Transparent Conducting AZO Thin Films by RF-Superimposed DC Magnetron Sputtering (III) | OEDS R&D Center, Kanazawa I. T.@*Toshihiro Miyata 1, Yuusuke Ohtani 1, Tadatsugu Minami 1 |
| | 7 | Origin of Resistivity Increase in Impurity-Doped ZnO Thin Films When Used in High-Humidity Environments | OEDS R&D Center, Kanazawa I.T.@*Takeshi Kuboi 1,Yasunori Honma 1,Toshihiro Miyata 1,Tadatsugu Minami 1 |
| | 8 | Film Thickness Dependence of Resistivity Stability in Impurity-doped ZnO Thin Films Used in Various Environments | OEDS R&D Center, Kanazawa I. T.@*Yasunori Honma 1, Toshihiro Miyata 1, Makoto Ishii 1, Tadatsugu Minami 1 |
| | 9 | Growth of Ga-doped ZnO thin films on Cyclo Olefin Polymer substrate by reactive plasma deposition | Research Inst., Kochi Univ. of Tech.@*Miyake Aki 1, Yamada Takahiro 1, Makino Hisao 1, Kishimoto Seiichi 1, Yamamoto Naoki 1, Yamamoto Tetsuya 1 |
| ’ | 10 | Transparent conducting ZnO films prepared on organic substrates | Osaka Sangyo Univ 1,Okuda Technical Office 2@*Nakamura Atsuhiro 1,Uehara Kenji 1,Agura Hideaki 1,Aoki Takanori 1,Suzuki Akio 1,Matsushita Tatsuhiko 1,Okuda Masahiro 2 |
| | | Lunch 12:00`13:00 | |
| 30p-ZC-@/ I,II |
| ’ | 1 | Fabrication and luminescence of ZnO - MgO (s. s.) phosphor | Mie Sci. and Tech. Promotion Center 1@*Inoue Koji 1, Torii Yasuyoshi 1 |
| | 2 | Pt/MgXZn1-XO Schottky diode ultraviolet detector using ZnO single crystal | Iwate Ind. Res. Inst. 1,Tohoku Univ. 2,IIS 3,Lightom Inc. 4,Iwate Univ. 5@*Endo Haruyuki 1,2,Sugibuchi Mayo 3,Takahashi Kousuke 3,Goto Shunsuke 4,Hasegawa Tatsuo 1,Takahashi Kyou 1,Ohshima Eriko 1,Meguro Kazuyuki 1,Hane Kazuhiro 2,Kashiwaba Yasube 5 |
| | 3 | Characterizations of (Mg,Zn,Cd)O hetero-junction on p-type SiC substrate. | Res. Inst. of Electronics, Shizuoka Univ. 1@*Yamamoto Kenji 1, Ohashi Toshiya 1, Nakamura Atsushi 1, Temmyo Jiro 1 |
| | 4 | Fabrication of n-MgyZn1-yO/Zn1-xCdxO/p- MgyZn1-yO heterojunction diode and the analysis of the EL spectra |
Res. Inst. Electron. Shizuoka Univ.@1NTT Basic
Lab.@Atsushi Nakamura 1, Kenji Yamamoto 1, Toshiya Ohashi 1, Sandip Gangil
1, Hideki Gotoh 2, Jiro Temmyo 1 |
| | 5 | ZnO/ZnMgO Heterojunction Based Ion Sensitive Field Effect Transistors | Osaka Inst. of Tech., Nanomaterials Microdevices Res. Center@*Takagi Daisuke 1, Kawasaki Motoki 1, Koike Kazuto 1, Nakamura Yoshinobu 1, Sasa Shigehiko 1, Yano Mitsuaki 1 |
| | 6 | ZnO thin films fabricated by MOCVD and electrical characteristics of FETs | Iwate Univ. 1,Iwate Ind. Res. Inst. 2@*Sugawara Jun 1,Ohshima Eriko 2,Ye Rongbin 1,Baba Mamoru 1,Nishidate Kazume 1,Ohta Yasuharu 1 |