| 6 Thin Films and Surfaces |
| 6.1 Ferroelectric Films |
| March 27 9:30`17:30 |
| 27a-SV-@/ II |
| | 1 | Sublimation pressure of Bis(pentamethylcyclopentadienyl)strontium | KOJUNDO CHEMICAL LABO.@*Higashi Shintaro ,Kadokura Hidekimi |
| | 2 | Fabrication of M3+ Thin Films by Liquid Delivery MOCVD |
NAIST 1@Kawamura Hiroshi 1, *Ohkita Shuichi 1,
Uchiyama Kiyoshi 1, Shiosaki Tadashi 1 |
| | 3 | Preparation of Pt electrodes by laser lift-off technique on dielectric thin film |
Grad. School of Natural Sci. & Tech. Kanazawa Univ.
1,Fac of Eng. Kanazawa Univ. 2,Ishikawa-nct. 3@*Norichi Takahiro 1,Kawae
Takeshi 1,Hyun Gyungsu 2,Ohtsubo Shigeru 3,Morimoto Akiharu 1,Kumeda Minoru
1 |
| | 4 | Polarization Dependence of Electronic Structure of Bi4Ti3O12 Probed by Soft-X-Ray Raman Scattering | Tokyo Univ. Sci. 1, RIKEN 2, ISSP, Univ. Tokyo 3@Higuchi Tohru 1, Tsukamoto Takeyo 1, Hattori Takeshi 1, Harada Yoshihisa 2, Shin Shik 2,3 |
| | 5 | Effects of interstitial hydrogen on the polarization properties in Bi4Ti3O12 single crystals | RCAST, Univ. Tokyo 1, SORST-JST 2@*Yuji Noguchi 1,2, Katsuya Yamamoto 1, Mitsuaki Shinoda 1, Masaru Miyayama 1 |
| | 6 | Relationship between average, local crystal structure, and ferroelectric performances of Bi-Si-O added Sr-Ce-Bi-Ta-O ferroelectric material | Tokyo Univ. of Science 1, JAEA 2@*Taniyama Satoshi 1, Idemoto Yasushi 1 , Iikubo Satoshi 2, Syamoto Shinichi 2 |
| | | Break 11:00`11:15 | |
| | 7 | Liquid-phase growth of BiFeO3 films by infrared irradiation | Grad.School of Natural Sci.& Tech. Kanazawa Univ. 1, Fac.of Eng. Kanazawa Univ. 2, Ishikawa National College of Tech. 3, NIMS 4@Takeshi Kawae 1, Mitsuhiro Shiomoto 1, Hisashi Tsuda 2, Satoru Yamada 3, Masanori Nagao 4, Akiharu Morimoto 1, Minoru Kumeda 1 |
| | 8 | Initial Growth Stage of Epitaxial BiFeO3 Thin Films | Osaka Prefecture Univ. 1@*Inui Shinsuke 1, Izumi Hirokazu 1, Katayama Satoshi 1, Yoshimura Takeshi 1, Fujimura Norifumi 1 |
| | 9 | Sol-Gel Preparation and Characterization of Multiferroic BiFeO3 Thin Films with Various Bi/Fe Ratio | Graduate School of Eng. Sci., Osaka Univ.@Yoshitaka Nakamura 1,Kwi-Young Yun 1, Seiji Nakashima 1, Masanori Okuyama 1 |
| | 10 | Crystallization behavior and electrical properties of multiferroic BiFeO3 thin films annealed at various oxygen partial pressures | Graduate School of Eng. Sci., Osaka Univ. 1@*Yun Kwi-Young 1, Nakamura Yoshitaka 1, Nakashima Seiji 1, Okuyama Masanori 1 |
| | 11 | Preparation and characterization of BiFeO3 thin films on membrane structure [II] | Graduate school of Eng. Sci., Osaka Univ.@*Nakashima Seiji 1, Yun Kwi-Young 1, Nakamura Yoshitaka 1, Okuyama Masanori 1 |
| | | Lunch 12:30`13:30 | |
| 27p-SV-@/ II |
| ’ | 1 | Structural, ferroelectric and magnetic properties of multiferroic BiFeO3 films | Tokyo University of Science@Hiroshi Naganuma 1, Soichiro Okamura 1 |
| | 2 | Leakage current property of BiFeO3 films | Tokyo University of Science@*Yousuke Inoue 1, Hiroshi Naganuma 1, Soichiro Okamura 1 |
| | 3 | Hysteresis Measurement of Multiferroic BiFeO3 Thin Films at Room Temperature by 100 kHz-Driving | Tokyo Univ. of Science 1@Naganuma Hiroshi 1, Inoue Yosuke 1, *Okamura Soichiro 1 |
| | 4 | Bi and Fe content dependence of structural, ferroelectric and magnetic properties of BiFeO3 films | Tokyo University of Science@*Tomosato Okubo 1, Hiroshi Naganuma 1, Soichirou Okamura 1 |
| | 5 | Effect of Mn substitution for B-site on the electrical and magnetic properties of BiFeO3 | Osaka Prefecture Univ.1@*Katayama Satoshi 1, Inui Shinsuke 1,Izumi Hirokazu 1, Yoshimura Takeshi 1, Fujimura Norifumi 1 |
| £ | 6 | Ferroelectric Properties of Mn-substituted BiFeO3 Thin Film on Ir Electrodes | Tokyo Institute of Technology1, Fujitsu Laboratories Ltd2@*Z.Y. Zhong1, S.K.Singh1, K.Maruyama2, H.Ishiwara1 |
| | 7 | Structural, ferroelectric and magnetic properties of BiMnO3 films on SrTiO3(100) substrates prepared by chemical solution deposition | Tokyo University of Science@*Tetsuro Harima 1, Hiroshi Naganuma 1, Hiromi Shima 1, Soichiro Okamura 1 |
| | 8 | Synthesis and magnetic/electric properties of BiCrO3 thin films | Sophia Univ. 1, Kyoto Univ. 2@*Noriya Ichikawa 1, Masaya Arai 1, Yusuke Imai 1, Atsushi Tanokura 1, Hiroshi Sakama 1, Masaki Azuma 2, Yuichi Shimakawa 2, Mikio Takano 2 |
| | | Break 15:30`15:45 | |
| ’ | 9 | Effect of Antiferromagnetic Ordering on Ferroelectric Domain Switching Properties of YMnO3 Epitaxial Thin Films | Osaka Prefecture Univ.@1@Maeda Kazuhiro 1,Yoshimura Takeshi 1,Fujimura Norifumi 1 |
| | 10 | Raman scattering observation of ferro/para-electric phase transition of YMnO3 | Kyoto Inst. Tech. 1, Wakayama Univ. 2, Osaka pref. Univ. 3@*Fukumura Hideo 1, Harima Hiroshi 1, Kisoda Kenji 2, Takahashi Tetsuya 3, Yoshimura Takeshi 3, Fujimura Norifumi 3 |
| | 11 | Magnetic Ordering of Ferromagnetic Ferroelectric YbMnO3 Epitaxial Thin Films | Osaka Prefecture Univ. 1, Kyoto Inst. Tech. 2@*Tetsuya Takahashi 1, Takeshi Yoshimura 1, Norifumi Fujimura 1, Hideo Fukumura 2, Hiroshi Harima 2 |
| | 12 | Magnetic and Dielectric Properties of Yb(Mn1-xAlx)O3 Thin Films | Osaka Prefecture Univ. 1@*Fukae Keisuke 1,Takahashi Tetuya 1,Yoshimura Takesi 1,Fujimura Norifumi 1 |
| | 13 | Syntheses of (YbFeO3)n(FeO)m thin films by PLD method | Waseda Univ. 1,Okayama Univ. 2@*Tatsuro Koizumi 1,Yoshiaki Uesu 1, Kay Kohn 1, Naoshi Ikeda 2 |
| | 14 | Growth of YbFe2O4 Thin Films | Osaka Prefecture Univ 1@Imamura Ken 1,Yoshimura Takeshi 1,Fujimura Norifumi 1 |
| | 15 | New multiferroic materials: Magnetic and dielectric properties of garnet type R3Fe5O12(R=rare earth) thin films | ISIR Osaka Univ. 1@*Tsuruta Koji 1,Koide Takushi 1,Yamahara Hiroyasu 1,Seki Munetoshi 1,Tabata Hitoshi 1 |
| 6.1 Ferroelectric Films |
| March 28 9:30`18:20 |
| 28a-SV-@/ II |
| | 1 | Enhanced tunability of (Ba,Sr)TiO3 thin films permittivity by Y doping. | Fujitsu Limite@*Ishii Masatoshi, John D. Baniecki, Kurihara Kazuaki, Yamanaka Kazunori |
| £ | 2 | CORRELATIONS BETWEEN DOPANT IONIC RADIUS, CELL VOLUME, ELASTIC STRAIN, AND THE ENHANCED DIELECTRIC PROPERTIES OF (Ba,Sr)TiO3 THIN FILMS | Fujitsu Limited 1@*John D. Baniecki 1, Ishii Masatoshi 1,Kurihara Kazuaki 1,Yamanaka Kazunori 1 |
| | 3 | A study on tunable coplanar waveguide line with (Ba0.6,Sr0.4)TiO3/electrode/(Ba0.6,Sr0.4)TiO3 sandwich structure | Graduate school of Eng. Sci., Osaka Univ.@*Watanabe Shigeyuki, Daniel Popovici, Noda Minoru, Okuyama Masanori |
| | 4 | DLTS characterization of (Ba,Sr)TiO3 high-k thin film capacitors | Grad. School of Natural Sci. & Tech., Kanazawa Univ. 1, Fac. of Eng., Kanazawa Univ. 2, Taiyo Yuden Co., Ltd. 3@*Nagakoshi Yasuhito 1, Teratani Hitoshi 2, Kawae Takeshi 1, Morimoto Akiharu 1, Kumeda Minoru 1, Morito Kentaro 3 |
| | 5 | Dielectric Properties of Double-Alkoxy-Derived (100)-Predominant BaTiO3 Films | National Inst. Sci. Tech.(AIST) 1, Nagoya Inst. Tech. 2, Toyohashi Univ. Tech. 3@*Kato Kazumi 1,2, Suzuki Kazuyuki 1, Kayukawa Shingo 2, Tanaka Kiyotaka 2, Guo Yiping 3 |
| | 6 | Electrical properties of dielectric STO films on Pt and Ru hybrid bottom electrode | Kanazawa Univ. 1, Ishikawa National College of Technology 2. @*T. Y. KIM 1, T. Kawae 1, A. Morimoto 1, M. Kumeda 1 and S. Yamada 2 |
| | | Break 11:00`11:15 | |
| | 7 | Justification of the Schottky emission model at the interface of Pt and SrTiO3 with dilute oxygen vacancies | Kanagawa Academy of Science and Technology@Numata Ken 1 |
| ’ | 8 | Electrical characteristics of LaTiO thin films | RCNS, Hiroshima Univ. 1, Elpida Memory Inc. 2@Hikaru Hara 1, Masami Tanioku 2, Masaki Yamato 1, Takamaro Kikkawa 1 |
| ’ | 9 | Electrical characteristics of SrNbO3 thin films | Hiroshima Univ. 1, Elpida Memory Inc.2 @M.Yamato 1, M.Tanioku2 and T.Kikkawa1 |
| | 10 | Effect of the state of ablated spices on epitaxially grown Y2O3/Si interface II | Osaka Pref. Univ. 1@*Nishijima Masanori 1,Yoshimura Takeshi 1,Fujimura Norifumi 1 |
| | 11 | Application of atomospheric pressure non-equilibrium plasma process for High-k dielectrics | Osaka Pref. Univ. 1, Sekisui Chemical. 2@*Yoshida Masashi 1, Nishijima Masanori 1, Yoshimura Takeshi 1, Kunugi Syunsuke 2, Uehara Tsuyoshi 2, Fujimura Norifumi 1 |
| | | Lunch 12:30`13:30 | |
| 28p-SV-@/ II |
| | 1 | Development of PZT Piezoelectric Thin Film-MEMS Device and that Application to Vibration Gyro | Corporate Components Development Center,Panasonic Electronic Devices Co., Ltd. @Nomura Koji |
| | | Break 14:10`14:20 | |
| | 2 | Dielectric Properties of Pb(Zr, Ti)O3 Films Prepared by Aerosol Deposition Method in Milli-meter Wave Range | NEC Corp. 1, A.I.S.T. 2@*Nakada Masafumi 1, Tsuda Hiroki 2, Kawate Etsuo 2, Ohashi Keishi 1, Akedo Jun 2 |
| ’ | 3 | Fabrication of piezoelectric micro cantilever using LNO and PZT thin films |
AIST 1, Taiyo Yuden Co. Ltd. 2@Takeshi Kobayashi
1, Ryuichi Kondou 2, Kentaro Nakamura 2, Masaaki Ichiki 1, Ryutaro Maeda
1 |
| ’ | 4 | MOCVD growth and characterization of one-axis oriented Bi-perovskite oxide thick films for piezo applications | Tokyo Tech. 1,Tokyo Univ. Sci. 2,AIST 3,Kochi Univ. Tech. 4@*Yasui Shintaro 1,Naganuma Hiroshi 2,Okamura Soichiro 2,Iijima Takashi 3,Nishida Ken 4,Funakubo Hiroshi 1 |
| ’ | 5 | Fabrication and Optical Properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 Thin Films on Si Substrates by PLD Method | Tokyo Tech. 1,Shizuoka Univ. 2,CAMA Tokyo Tech. 3 @*Shogo Hayashi 1, Naoki Wakiya 2, Takanori Kiguchi 3, Junzo Tanaka 1, Kazuo Shinozaki 1 |
| | 6 | Optical Properties of Epitaxial PLZT Thin Films Fabricated by Sol-Gel Process Advanced | NAIST@*Masahiro Echizen 1, Takuya Kosaka 1, Daiki Fukunaga 1, Takashi Nishida 1, Kiyoshi Uchiyama 1, Tadashi Shiosaki 1 |
| | 7 | Electro-optic property of epitaxially grown PLZT thin films by sol-gel method | NAIST 1@*Daiki Fukunaga 1,Takuya Kosaka 1,Kiyoshi Uchiyama 1,Tadashi Shiosaki 1 |
| | 8 | Fabrication and characterization of ferroelectric/fluorescent oxide films | Kanazawa Inst. of Tech., OEDS R&D Center 1, Faculty of Engineering 2@*Aizawa Koji 1, Iwata Hiroyuki 2, Sogawa Tetsuya 2 |
| | | Break 16:05`16:20 | |
| | 9 | Epitaxial growth of Pt and Ir thin films on SrTiO3(100) substrate and fabrication of single crystalline Pt thin films | Hyogo Univ. 1,Fujitsu Lab.Ltd 2@*Masayoshi Kume 1,Hironori Fujisawa 1,Masaru Shimizu 1,Yasutosi Kotaka 2,Kouichirou Honda 2 |
| | 10 | Epitaxial growth of PbTiO3 on single crystalline Pt thin films by metalorganic chemical-vapor deposition | Hyogo Univ. 1,Fujitsu Lab.Ltd 2@*Masayoshi Kume 1,Hironori Fujisawa 1,Masaru Shimizu 1,Yasutosi Kotaka 2,Kouichirou Honda 2 |
| | 11 | Preparation of Ir-based electrodes by liquid-delivery MOCVD (II) | Univ. Hyogo 1, Sagami Chem. Res. Center 2, Tosoh Corp. 3@*Yamashita Daisuke 1, Fukui Hidetada 1, Fujisawa Hironori 1, Shimizu Masaru 1, Tada Kenichi 2, Yamakawa Tetsu 2, Kawano Kazuhisa 3, Oshima Noriaki 3 |
| ’ | 12 | Observation of ferroelectricity in PbTiO3 ultrathin films by scanning nonlinear dielectric microscope | Himeji Inst. Tech. 1, Univ. Hyogo 2@*Yonetani Masashi 1, Takashima Yoshiyuki 2, Horii Toru 2, Fujisawa Hironori 1,2, Shimizu Masaru 1,2 |
| ’ | 13 | Ferroelectric Field-Effect-Transistors using ZnO Thin Film for Nonvolatile Memory Devices | Matsushita Electric Industrial Co., Ltd. 1@*Kaneko Yukihiro 1, Tanaka Hiroyuki 1, Kato Yoshihisa 1 |
| | 14 | Fabrication of ZnO Ultra Thin Films and the Electrical Transport Properties | Osaka Prefecture Univ. 1@*Sakamoto Shinya 1,Arai Ryota 1,Oshio Takeshi 1,Masuko Keiichiro 1,Yoshimura Takeshi 1,Ashida Atsushi 1,Fujimura Norifumi 1, |
| | 15 | Electrical characteristics of ferroelectric gate thin-film transistors based on Pb(Zr, Ti)O3/ZnO | Osaka Prefecture Univ. 1@*Ryota Arai 1, Keiichiro Masuko 1, Takeshi Yoshimura 1, Norifumi Fujimura 1 |
| ’ | 16 | Fabrication of ferroelectric gate transistor with SrTi1-xRuxO3 thin film as a channel (II) | Himeji Inst. Tech. 1, Univ. Hyogo 2@*Nagaoka Takuya 1, Yoshida Syuhei 2, Fujisawa Hironori 1,2, Shimizu Masaru 1,2 |
| 6.1 Ferroelectric Films |
| March 29 9:30`18:35 |
| 29a-SV-@/ II |
| | 1 | Modification of HfO2 precursor solution applied to (Y,Yb)MnO3/HfO2/Si | AIST 1@*Suzuki Kazuyuki 1, Kato Kazumi 1 |
| | 2 | Insulator thickness dependence of current characteristics of ferroelectric gate FET using SBT-Si oxide interface | Graduate School of Eng. Sci., Osaka Univ.1@*Bong-Yeon Lee1, Takaaki Minami1, Takeshi Kanashima1, Masanori Okuyama1 |
| £ | 3 | Enhancement of memory retention time of MFIS with SBT ferroelectric and SiO2 buffer layers treated by nitrogen radical irradiation | Graduate school of Eng. Sci., Osaka Univ. 1@*Le Hai Van 1,Kanashima Takeshi 1,Okuyama Masanori 1 |
| | 4 | Fabrication and characterization of Metal/Insulator/Ferroelectric/Insulator/Semiconductor (M-I-FIS) structures | Tokyo Tech, P&I Lab. 1@*Takano Yuichi 1, Saiki Hirokazu 1, Shibata Hiroshi 1, Tokumitsu Eisuke 1 |
| | 5 | Write disturb of NAND-type FeRAM circuit based on MFIS-FET |
Tokyo Inst. of Tech. IGSSE 1, Fujitsu Labs 2 @Ikeda
Taketsugu 1, Tabuchi Yoshiaki 1, Tamura Tetsurou 2, Hoko Hiromasa 2, Arimoto
Yoshihiro 2, Ishiwara Hiroshi 1 |
| | 6 | Disturb characterization for 2T MFISFET memory | Tokyo Inst of Tech.IGSSE@1,Fujitsu Lab 2@*Li Y. 1,Saito K. 1,Maruyama K. 2,Hoko H. 2,Arimoto Y. 2,Ishiwara H. 1 |
| | | Break 11:00`11:15 | |
| | 7 | Low Voltage Operation of Ferroelectric P(VDF-TrFE) Copolymer MFIS diodes | Tokyo Inst. of Technology@*Sumiko Fujisaki1, Hiroshi Ishiwara1 |
| | 8 | Ferroelectric gate field effect transistors by using carbon nanotube | Sharp Corp. 1, Tokyo Inst. of Tech. IGSSE 2@*Ibata Masakazu 1,2, Takashita Yuichiro 2, Ishiwara Hiroshi 2 |
| | 9 | Fabrication and evaluation of ferroelectric gate carbon nanotube transistor | Tokyo Inst. Of Tech. IGSSE@*Takashita Yuichiro 1, Shirao Mizuki 1, Yano Aki 1, Ibata Masakazu 1, Ishiwara Hiroshi 1 |
| | 10 | Application of low dielectric Bi2WO6 thin films to MFIS devices | Tokyo Institute of Technology IGSSE 1,Fujitsu laboratories Ltd 2@Okazawa Kou 1,Umeyama Masashi,Maruyama Kenji,Ishiwara Hiroshi |
| | 11 | Operation characteristic of MFIS-FET using Sr0.8Bi2.2Ta2O9 added Bi2WO6 | Tokyo Inst of Technology IGSSE 1,Fujitu Lab Ltd2@*=Umeyama Masashi 1,Okazawa Kou 1,Ishiwara Hiroshi 1,Maruyama Kenji 2 |
| | | Lunch 12:30`13:30 | |
| 29p-SV-@/ II |
| | 1 | FRAM market and outlook expanding with low-power consumption and highly secure capability | FUJITSU Ltd.@TANAKA Hitoshi |
| | | Break 14:10`14:20 | |
| | 2 | Adhesion improvement between Pt and IrOx in SBT/Pt/IrOx/Ir/TiAlN structure. | Oki Electric Industry Co., Ltd.@*Komori Kenji 1,Inomata Daisuke 1,Mori Hirotaka 1,Abe Kazuhide 1,Taguchi Takashi 1 |
| | 3 | Imprint Behavior of Ferroelectric PZT Thin Film Capacitors in the Early Stage | Tokyo University of Science.1@*Soichiro Koshika 1,Hiromi Shima 1,Hiroshi Naganuma 1,Soichiro Okamura 1 |
| ’ | 4 | A Model for the Progress of Imprint Taking Account of the Change of Conduction Mechanism at Interfacial Layer | Tokyo University of Science@*Soichiro Koshika 1,Hiromi Shima 1,Hirosi Naganuma 1,Soichiro Okamura 1 |
| £ | 5 | Influence of Ionic Dyes: Crystal Violet (CV) and Coumarin 2 (C2) on AFM topography and Pyroelectric-Current of Copolymer (vinylidene fluoride tetrafluorethelene) (PVDF-TrFE). | Shizuoka Univ. 1, Mansoura University, Mansoura, Egypt2@Abdelkarim Mohamed Abo El Wafa1,2, A. Sasaki 1, F. Iwata 1 |
| ’ | 6 | Preparation and characterization of highly oriented Pb(Zrx,Ti1-x)O3/LaNiO3 structures on epitaxial Al2O3/Si substrates | Toyohashi Univ. of Tech. 1,JST-CREST 2@*Kikuhi Kenrou 1,Guo Yiping 1,Akai Daisuke 1,Sawada Kazuaki 1,2,Ishida Makoto 1,2 |
| ’ | 7 | Domain structure of (100)/(001)-oriented epitaxial lead titanate films and their properties | Tokyo Tech. 1, Kochi Univ. Tech. 2, Bruker AXS 3@*Ikariyama Rikyu 1, Nakaki Hiroshi 1, Kim Yong Kwan 1, Nishida Ken 1, 2, Saito Keisuke 3, Funakubo Hiroshi 1 |
| | 8 | Structural analysis of novel domain in epitaxial lead titanate thick film grown by MOCVD | Tokyo Tech. 1, Kochi Univ. of Tech. 2, Bruker AXS 3, POSTECH 4@Nakaki Hiroshi 1, Ikariyama RIkyuu 1, Kim Yong Kwan 1, Yokoyama Shintaro 1, Nishida Ken 1,2, Morioka Hitoshi 3, Saito Keisuke 3, Baik Sunggi 4, Funakubo Hiroshi 1 |
| ’ | 9 | Effect of novel domain structure on the properties of the epitaxial lead zirconate titanate thick film grown by MOCVD | Tokyo Tech. 1, Kochi Univ. of Tech. 2, Bruker AXS 3, JASRI/SPring-8 4@Nakaki Hiroshi 1, Ikariyama Rikyuu 1, Kim Yong Kwan 1, Yokoyama Shintaro 1, Nishida Ken 1,2, Saito Keisuke 3, Sakata Osami 4, Kimura Shigeru 4,Kazunori Fukuda 4, Funakubo Hiroshi 1 |
| | | Break 16:20`16:35 | |
| £ | 10 | Study of partially-switched states of ferroelectrics in relation to the spatial inhomogeneity of their domain structure | Osaka Univ. 1@Ricinschi Dan 1, Okuyama Masanori 1 |
| | 11 | Ferroelectric performance and average, local crystal structure of (Pb,Si)(Zr,Ti,Nb)O3 ferroelectric material | Tokyo Univ. of Science 1, JAEA 2@*Komiya Shouko 1, Idemoto Yasushi 1, Iikubo Satoshi 2, Shamoto Shin-ichi 2 |
| | 12 | Fabrication of lead zirconium titanate PZT nano crystals by RF magnetron sputtering | Nara Inst. Sci. and Tech, NAIST 1@*Koichi Kubo 1, Masahiro Echizen 1, Takashi Nishida 1, Hiroaki Takeda 1, Kiyoshi Uchiyama 1, Tadashi Shiosaki 1 |
| | 13 | Size dependence of lattice parameters of self-assembled PbTiO3(111) islands | Univ. Hyogo 1, NIMS 2, Hiroshima Univ. 3, JASRI 4@*Fujisawa Hironori 1,Kume Masayoshi 1,Shimizu Masaru 1,Osada Minoru 2,Miyoshi Satoru 3,Kuroiwa Yoshihiro 3,Sakata Osami 4,Kimura Shigeru 4 |
| | 14 | Size effect on ferroelectric phase transition in self-assembled PbTiO3 nano-islands | NIMS 1, Univ. Hyogo 2 @*Osada Minoru 1, Fujisawa Hironori 2, Shimizu Masaru 2 |
| | 15 | Epitaxial growth of a conductive oxide film to the Si substrate on the CeO2/YSZ buffer layer | Tokyo Inst. of Tech. 1, Shizuoka Univ. 2@*Go@Hyunyoung 1, Wakiya@Naoki 2, Kiguchi@Takanori 1, Tanaka@Junzo 1, Shinozaki@Kazuo 1 |
| ’ | 16 | Growth of SrRuO3 films with low electrical resistivity by RF magnetron sputter | Tokyo Tech. 1, Kochi Univ. Tech. 2, Kanagawa Ind. Tech. Cent. 3,@*Takafumi Kamo 1, Ken Nishida 2, Kensuke Akiyama 3, Takashi Katoda 2, Hiroshi Funakubo 1 |
| ’ | 17 | Epitaxial growth of SrRuO3 thin films on Si substrates with γ-Al2O3 buffer layers | Toyohashi Univ. Tech. 1, TUT VBL 2,JST-CREST 3@*Mikinori Ito 1,Mikito Otonari 1,Daisuke Akai 2,Kazuaki Sawada 1,3,Makoto Ishida 1,2,3 |
| 6.1 Ferroelectric Films |
| March 30 9:30`12:30 |
| 30a-SV-@/ II |
| ’ | 1 | Observation of cleavage TGS (010) surface using Non-contact SNDM | R.I.E.C Tohoku Univ. 1@*Saito Akio 1, Hirose Ryusuke 1, Cho Yasuo 1 |
| | 2 | Initial-Radius Dependency of Long Term Retention Characteristics of Small Inverted Domain Dots Formed on Congruent Single-Crystal LiTaO3 | Research Inst. of Electrical Communication, Tohoku Univ. 1@*Nozomi Odagawa 1, Yasuo Cho 1 |
| ’ | 3 | Cross-sectional observation of nano-domain dots formed in stoichiometric lithium tantalate | RIEC. Tohoku Univ.@*Daimon Yasuhiro 1, Cho Yasuo 1 |
| ’ | 4 | High Speed Recording Trial Using Rotating-Disk Type Ferroelectric Data Storage | RIEC.Tohoku Univ.@*Kurihashi Yuichi,Hiranaga Yoshiomi,Cho Yasuo |
| ’ | 5 | Reading and writing experiments on lubricated LiTaO3 single-crystal media | Corporate R&D Lab., Pioneer 1@*Mori Shuntaro 1,Takahashi Hirokazu 1,Maeda Takanori 1,Onoe Atsushi 1 |
| | 6 | Ferroelectric digital data writing and readout using a new tracking method | Corporate R&D Lab.,Pioneer@*Kenjiro Fujimoto 1, Takanori Maeda 1, Atsushi Onoe 1 |
| | | Break 11:00`11:15 | |
| | 7 | Growth of LiNbO3 single crystal film on silica glass subustrate | Kanagawa Inst. of Tech. 1@*Noge Satoru 1, Uno Takehiko 1 |
| | 8 | Preparation and properties of Li-doped (K,Na)NbO3 thin films | Shonan Inst. Tech. 1@*Maiwa Hiroshi 1, Kogure Tomonori 1, Ishizaka Keiko 1, Hayashi Takashi 1 |
| | 9 | Preparation of KNbO3 thin films by pulsed laser deposition | NIMS 1@*Adachi Yutaka 1, Ohashi Naoki1, Haneda Hajime1 |
| | 10 | Fabrication of (Na, K)NbO3 Thin Films by Sol-gel Process Using (Na, K)-excess Precursor Solutions. | Nagoya Inst. of Tech. 1, AIST 2 @*Kiyotaka Tanaka 1, Ken-ichi Kakimoto 1, Hitoshi Ohsato 1, Takashi Iijima 2 |
| ’ | 11 | Deposition of KNbO3-NaNbO3 thin films by rf magnetron sputtering | Kyoto Univ. 1@*Mino Takuya 1,Inoue Takashi 1,Kuwajima Shuichiro 1,Suzuki Takaaki 1,Kanno Isaku 1,Kotera Hidetoshi 1,Wasa Kiyotaka 1 |
| 6.2 Carbon Films |
| March 27 10:00`18:00 |
| 27a-SR-@/ II |
| | 1 | Characterization of BCN film using tris(dimethylamino)boron (TMAB) | Osaka Univ. 1@*Moriyama Ryota 1,Sasada Takashi 1,Mazumder Motaharul 1,Kimura Chiharu 1,Aoki Hidemitsu 1,Sugino Takashi 1 |
| ’ | 2 | Influence of BCN film on dry etching process for interconnection formation | Osaka Univ. 1@*Sasada Takashi 1,Watanabe Daisuke 1,Moriyama Ryouta 1,Aoki Hidemitsu 1,M.K.Mazumder 1,Kimura Chiharu 1,Sugino Takashi 1 |
| | 3 | amorphous carbon nitride films with various nitrogen content | Gifu Natl. Coll. Technol. 1, Gifu Univ. 2@* Koketsu Hidenori 1, Habuchi Hitoe 1, Katsuno Takashi 2 |
| | 4 | Supermagnetron Plasma CVD of a-CNx:H films for Solar Cells | Shizuoka Univ., Res. Inst. Elect. 1@*Kinoshita Haruhisa 1, Kiyama Makoto 1, Suzuki Hiroyuki 1, Yamaguchi Tomuo 1 |
| | 5 | Thermal conductivity of amorphous carbon nitride films | Univ. of Tokyo 1, Inst. of Phys. and Chem. Res. 2 @*Miyai Seiichi 1, Kobyashi Tomohiro 2, Terai Takayuki 1 |
| | | Break 11:15`11:30 | |
| | 6 | Fabrication of mechanically Hard a-CNx films by MW plasma CVD | Nagaoka Univ.of Tech. 1@*Shinohara Akio 1, Koushima Masakazu 1, Watanabe Yusuke 1, Saitoh Hidetoshi 1, Ito Haruhiko 1 |
| | 7 | Decomposition of BrCN with microwave discharge flow of Ar -LIF observation of the CN(X) state- | Nagaoka Univ. of Tech. 1@*Wada Akira 1, Ito Haruhiko 1 |
| | 8 | Formation of amorphous carbon and related thin films based on the ECR discharge of Ar -Decomposition process of methane- | Nagaoka Univ. of Tech. 1@*Hayashi Hiroki 1, Watanabe Yusuke 1, Ito Haruhiko 1 |
| | 9 | Bias voltage dependence of NEXAFS spectra of a-CNx films prepared by magnetron-sputtering deposition | LASTI 1, Hyogo Univ 2@*Miyamoto Kazuyoshi 1,Niibe Masato 1,Kakutani Yukinobu 1,Mitamura Toru 2,Mochiji Kozo 2 |
| £ | 10 | Semiconducting Carbon Film from C60 Precursor by Pulsed Laser Deposition in Nitrogen | Nagoya Institute of Technology@S. M. Mominuzzaman, *Tetsuo Soga and Takashi Jimbo |
| £ | 11 | Study of Phosphorus P(2p) bonding states in Pulsed Laser Deposited camphoric Carbon Films | Nagoya Institute of Technology1, Bangladesh University of Engineering and Technology2@S. M. Mominuzzaman1, Mahbub Alam2, *Tetsuo Soga1 and Takashi Jimbo1 |
| | | Lunch 13:00`14:00 | |
| 27p-SR-@/ II |
| | 1 | Film density of amorphous hydrogenated carbon films deposited by ECR plasma CVD method with pulsed bias voltage | Nagaoka Univ. Tech. 1@*Ono Yuki 1, Matsuo Ryotaro 1, Ohshio Shigeo 1, Nishino Junichi 1, Saitoh Hidetoshi 1 |
| | 2 | Effect of Plasma Parameter on Properties of Amorphous Carbon Film formed by Plasma Source Ion Implantation and Deposition | Kanazawa Inst. of Technology AMSR&D Center 1, Industrial Res. Inst. of Ishikawa@Noriaki Ikenaga 1, Haruyuki Yasui 2, Kaoru Awazu 2, Noriyuki Sakudo 1 |
| | 3 | Synthesis of metal doped amorphous carbon films from solid organometallic complex | Tokyo Inst. of Tech. 1, Nagoya Univ. 2@@*Hiroki Akasaka 1, Hiroya Murakami 1, Naoto Ohtake 2 |
| | 4 | Deposition of a-C:h film on the medical apparatus. | Tokyo@Denki@Univ.@1@*Kanasugi Kazuya 1, Kizuka Hiroyuki 1, Ohgoe Yasuharu 1, Sato Keisuke 1, Hirakuri Kenji 1 |
| ’ | 5 | Iodine doping of a-C:H films prepared by RF sputtering. | Univ. of the Ryukyus 1@*Saida Yukihiro 1, Urasaki Hiroki 1, Oshiro Takehiko 1, Yamazato Masaaki 1, Higa Akira 1, Toguchi Minoru 1 |
| | 6 | Preparation of a-C:H films and evaluation of its optical properties and oxygen transmission rates | Tokyo Inst. of Tech. 1, Nagoya Univ. 2@*Nishi Hidetaka 1, Ohsone Yuki 1, Murakami Hiroya 1, Ohtake Naoto 2 |
| ’ | 7 | Relationship between the electrical properties of the Diamond-like Carbon (DLC) Films and their XPS spectra | Grad. Sch. of AdSM, Hiroshima Univ.1, Toyo Advanced Technologies Co., Ltd.2@Takabayashi Susumu1, Motomitsu Kunihiko1, Okamoto Keishi1,2, Nakatani Tatsuyuki2, Takahagi Takayuki1 |
| | | Break 15:45`16:00 | |
| ’ | 8 | Deposition of DLC film on polymers and its tribology property | Tokyo Denki Univ. 1, Ibaraki Univ. 2@*Matsumoto Ryohei 1, Ozeki Kazuhide 2, Hirakuri Kenji 3, Fukui Yasuhiro 3 |
| | 9 | Deposition of DLC/W-DLC film and evaluation of its friction properties | Tohoku Univ. 1, IFS Tohoku Univ. 2@*Takanori Takeno 1, Hiroyuki Miki 2, Toshiyuki Takagi 2, Takeshi Sato 2 |
| | 10 | Evaluation of Elastoplastic Properties of DLC Films by Optical Indentation Microscopy | AIST MRISUS 1, AIST RIIF 2@Ikeyama Masami 1, Choi Junho 1, Nakao Setsuo 1, Miyajima Tatsuya 2 |
| | 11 | Deformation of substrate and rupture of DLC films on stainless steel in water environment | AIST 1, Tokyo Denki Univ. 2@*Ohana Tsuguyori 1, Takimoto Kyouhei 2, Wu Xingyang 1, Nakamura Takako 1, Tanaka Akihiro 1 |
| ’ | 12 | A Computational Chemistry Study on the Structure and the Friction Property of Diamond-Like Carbon |
Dept. Appl. Chem., Tohoku Univ. 1, JST-PRESTO.
2, NICHe, Tohoku Univ. 3@Toshiaki Shibata 1, Hideyuki Tsuboi 1 , Michihisa
Koyama 1,@Nozomu Hatakeyama 1, Akira Endou 1, Hiromitsu Takaba 1, Momoji
Kubo 1,2, Carlos A. Del Carpio 1,@Akira Miyamoto 1,3 |
| | 13 | First-Principles@Calculation@of@Adatoms@on@Graphene | Kanazawa@Univ. 1,IISAUniv. of Tokyo 2@*Saito Mineo 1,2, Hashi Tomofumi 1 |
| ’ | 14 | Fabrication and characterization of carbon nanoball by thermal CVD | Graduate School of Eng.,Nagoya Univ. 1,EcoTopia Science Inst.,Nagoya Univ. 2@*Itoh Tsuneyuki 1,Kajita Keiichi 1,Ishizaki Takahiro 1,Saito Nagahiro 1,Takai Osamu 2 |
| | 15 | Carbon tubes in anodic alumina nano-holes deposited by ethanol electrolysis | UEC Tokyo 1@Yoshinao Mizugaki 1, Kyohei Kobayashi 1, Masataka Moriya 1, Kouichi Usami 1, and Tadayuki Kobayashi 1 |
| 6.2 Carbon Films |
| March 28 10:15`18:30 |
| 28a-SR-@/ II |
| ’ | 1 | Microwave plasma CVD of diamond under a trial configuration |
AIST@*H. Yamada, A. Chayahara, Y. Mokuno, S. Shikata |
| | 2 | Off-Angle Dependence of High-Quality (001) Diamond Films Homoepitaxially Grown at High Rates Using High-Power Microwave Plasma CVD Method | Osaka Univ. 1, Butsuzai Inst. 2@*Miyatake Hidetaka 1, Arima Kazuya 1, Maida Osamu 1, Teraji Tokuyuki 2, Ito Toshimichi 1 |
| | 3 | Impurity-Doped Diamond Film Growth Using High-Power Density MWPCVD with Conventional Quartz-Type Deposition Apparatus | Graduate School of Eng., Osaka Univ.@*Nakai Takahiro 1, Miyatake Hidetaka 1, Arima Kazuya 1, Maida Osamu 1, Ito Toshimichi 1 |
| | 4 | Diamond Deposition on a fine wire by hot filament CVD and measurement of thermal conductivity | Western Hiroshima Pref.Ind.Res.Inst. 1@Honda Masahide 1,Tsutsumoto Takahiro 1,Yamamoto Akira 1 |
| | 5 | Friction Wear Properties between Partially Polished CVD Diamond and Structural Steel | Inst. of Fluid Science, Tohoku Univ. 1, Graduate School of Engineering, Tohoku Univ. 2@*Miki Hiroyuki 1, Yoshida Naoki 2, Abe Toshihiko 1, Takeno Takanori 2, Takagi Toshiyuki 1 |
| | | Break 11:30`11:45 | |
| | 6 | Synchrotron X-ray topographic study of dislocations of (100) homoepitaxial diamond | Sumitomo Electric Industries, LTD. 1, AIST 2@*N. Tatsumi 1, T. Kato 2, K. Ikeda 2, H. Umezawa 2, S. Shikata 2 |
| £’ | 7 | Thick diamond layers angled by polishing to reveal depth profiles | NTT Basic Research Labs@*Tallaire Alexandre 1, Kasu Makoto 1, Ueda Kenji 1, Makimoto Toshiki 1 |
| | 8 | Distribution of Lattice Constant along the Growth Axis on Diamond Single Crystal using Microwave Plasma CVD method | Tohoku Univ. 1, Diamond Research Center, AIST 2@*Takashi Shishitani 1, Yuji Ohashi 1, Mototaka Arakawa 1, Jun-ichi Kushibiki 1, Yoshiaki Mokuno 2, Akiyoshi Chayahara 2, Shinichi Shikata 2 |
| ’ | 9 | Expansion of Crystalline Lattice in Heavily B-doped CVD Diamond Superconductivity | Waseda Univ. 1,NIMS 2@*Iriyama Shingo 1,Takenouchi Tomohiro 1,Ishiwata Hitoshi 1,Okada Ryousuke 1,Tachiki Minoru 2,Takano Yoshihiko 2,Ishii Akira 2,Ishii Satoshi 2,Kawarada Hiroshi 1 |
| ’ | 10 | Effect of surface termination and interface on the superconductivity of boron doped Diamond thin film | Waseda Univ. 1, NIMS 2@*Ryosuke Okada 1, Ishiwata Hiroshi 1, Takenouchi Tomohiro 1, Iriyama Shingo 1, Tachiki Minoru 2, Takano Yoshihiko 2, Ishii Satoshi 2, Okutsu Takashi 2, Ueda Shinya 2, Kawarada Hiroshi 1 |
| | | Lunch 13:00`14:00 | |
| 28p-SR-@/ II |
| | 1 | Formation of well-defined diamond(111) surfaces by homoepitaxial growth | AIST 1, CREST/JST 2, Univ. of Tsukuba 3, TIMS 4@*Tokuda Norio 1,2, Umezawa Hitoshi 1, Ri Sung-Gi 1,2, Ogura Masahiko 1,2, Yamabe Kikuo 3,4, Okushi Hideyo 1,2, Yamasaki Satoshi 1,2,3 |
| ’ | 2 | Growth of line shape heteroepitaxial diamonds | Aoyama Gakuin Univ. 1, TOPLAS ENGINEERING CO.,LTD 2@Takashi Kamano 1, Yutaka Ando 1, Kazuhiro Suzuki 2, Atsuhito Sawabe 1 |
| | 3 | Electronic Structures and Junction Properties of Hetero-Epitaxial CVD Diamond | IMRAM Tohoku Univ. 1, CREST JST 2 @Amano Naoki 1, Kawata Hiroshi 1 , Goto Tadahiko 1, Kono Shozo 1,2 |
| | 4 | Free-exciton luminescence spectrum broadening due to excitonic complex in diamond | Nihon Univ. 1, AIST 2@*Sakamoto Yoshihiro 1,Fujisaki Tatsuya 1,Murayama Kazuro 1,Yamasaki Satoshi 2,Ohkushi Hideyo 2 |
| | 5 | Cathodoluminescence of isotope clean diamond with carbon isotopes 12C and 13C | AIST-DiaRC 1, Univ. of Tsukuba 2, AIST-NRI 3@*Hideyuki Watanabe 1, Norikazu Mizuochi 2, 3, Shinichi Shikata 1, Christoph E. Nebel 1 |
| | 6 | Synthesis of deep UV luminous hexagonal boron nitride by thermal chemical vapor deposition | National Inst. for Materials Science@Osamu Tsuda 1, Kenji Watanabe 1, Takashi Taniguchi 1 |
| | 7 | Electrical characteristics of diamond p-i junction |
Nanotechnology RI/AIST@1, CREST/JST@2, Diamond
RC/AIST@3, Univ. of Tsukuba@4@*Sung-Gi Ri 1,2, Toshiharu Makino 1,2, Norio
Tokuda 1,2, Masahiko Ogura 1,2, Hiromitsu Kato 1,2, Daisuke Takeuchi 1,2,
Hideyuki Watanabe 2,3, Hideyo Okushi 1,2, Satoshi Yamasaki 1,2,4 |
| | 8 | Fabrication and Characterization of p+-i-p+ FETs on Heteroepitaxial Diamonds Grown on Ir (100) | Kobe Steel 1, Aoyama Gakuin Univ. 2@*Kawakami Nobuyuki 1, Yokota Yoshihiro 1, Tachibana Takeshi 1, Sawabe Atsuhito 2 |
| | | Break 16:00`16:15 | |
| | 9 | Electron emission from diamond pn junction | NIMS 1, Toshiba R&D center@Satoshi koizumi 1, Mariko Suzuki 2, Tomio Ono 2, Tadashi Sakai 2 |
| | 10 | Field emission from tip type diamond electron source | Sumitomo Electric Industries, LTD.@*Namba Akihiko 1,Tatsumi Natuo 1,Yamamoto Yoshiyuki 1,Nishibayashi Yoshiki 1,Imai Takahiro 1 |
| | 11 | Origin of field emission from a nano-diamond@electron emitter |
IMRAM, Tohoku University@1, CREST,JST 2, Kochi
Industrial Promotion Center 3,@Takyo Go 1, Kono Shozo 1,2, Goto Tadahiko
1, Sasaoka Hideki 3, Nishimura Kazuhito 3 |
| | 12 | Fabrication and Characterization of High-Quality CVD Diamond/TiN Schottky Structures | Osaka Univ. 1@Iwakaji Yoko 1,Miyatake Hidetaka 1,Maida Osamu 1,Ito Toshimichi 1 |
| | 13 | Fabrication of high-power diamond Schottky barrier diode by Schottky barrier height control. | AIST1, SEI2@Umezawa Hitoshi1, Tokuda Norio1, Ikeda Kazuhiro1, Tatsumi Natsuo2, Shikata Shin-ichi1 |
| | 14 | Electric field breakdown of Schottky diodes of diamond | NIMS 1, Osaka Univ. 2@*Tokuyuki Teraji 1, Satoshi Koizumi 1, Yasuo Koide 1, and Toshimichi Ito 2 |
| | 15 | Edge termination of diamond Schottky barrier diodes for high-voltage applications. | AIST 1, Sumitomo Elec. Ind. 2@Ikeda Kazuhiro 1, Umezawa Hitoshi 1, Tatsumi Natsuo 2, Shikata Shin-ichi 1 |
| £ | 16 | High-performance metal-semiconductor-metal diamond deep-UV photodetectors | NIMS@*Meiyong Liao 1, Yasuo Koide 1 |
| £’ | 17 | Solar-blind deep-ultraviolet diamond Schottky photodiode with interdigitated electrodes | NIMS@*Meiyong Liao 1, Yasuo Koide 1 |
| 6.2 Carbon Films |
| March 29 9:45`12:30 |
| 29a-ZJ-@/ II |
| | 1 | Electronic properties of ion-implanted diamond after high-pressure and high-temperature annealing | NTT Basic Research Lab.@*Kenji Ueda, Makoto Kasu, Alexandre Tallaire, Toshiki Makimoto |
| | 2 | High-temperature annealing of a B doped diamond layer formed using an ion implantation technique | AIST 1, Univ. Tsukuba 2@Tsubouchi Nobuteru 1,Ogura Masahiko1 , Mizuochi Norikazu 1,2, Chayahara Akiyoshi 1, Okushi Hideyo 1 |
| £ | 3 | BAND BENDING IN P-DOPED (111) DIAMOND ON VACUUM ANNEALING | DRC AIST 1@Somu Kumaragurubaran 1, Takatoshi Yamada 1, Shin-ichi Shikata 1 |
| | 4 | Photoelectron emission mechanism from H-terminated nano-diamond surfaces (II) | AIST NRI 1, AIST DiaRC 2, IMO Hasselt Univ. 3@*Daisuke Takeuchi 1, Christoph Erwin Nebel 2, Oliver Aneurin Williams 3, Satoshi Yamasaki 1 |
| | 5 | Theoretical study on Al adsorption on H-terminated diamond (001) surfaces | NTT Basic Research Labs. 1@*Kageshima Hiroyuki 1, Kasu Makoto 1 |
| | | Break 11:00`11:15 | |
| £ | 6 | Electronic properties of nitro- and amino-phenyl layers on boron doped single crystalline CVD diamond | AIST@*V.Dharuman,S.-G.Ri, N.Tokuda, C.E.Nebel |
| £ | 7 | AFM and XPS Characterization of Amine-Layer Grown Photochemically on H-Terminated Undoped Single Crystalline CVD Diamond | AIST@Nianjun Yang, H. Uetsuka, H. Watanabe, D. Venkataraman, T. Nakamura, C.E. Nebel |
| | 8 | Gate Interface Layer of H-Terminated Diamond Field-Effect Transistors | NTT Basic Research Labs@*Makoto Kasu 1, Kenji Ueda 1, Hiroyuki Kageshima 1, Alexandre Tallaire 1, Yoshiharu Yamauchi 1, Toshiki Makimoto 1 |
| ’ | 9 | Fabrication and evaluation of H-terminated diamond MISFET utilizing TiC ohmic layer formation and H-radical irradiation process | Waseda Univ 1,AIST 2@*Jingu Yoshikatsu 1,Koshiba Toru 1,Hirama kazuyuki 1,Iwasaki Takayuki 1,Umezawa Hitoshi 2,Kawarada Hiroshi 1 |
| | 10 | The increase of surface conductivity on H-termed diamond by poly fuluorocarbon films | Waseda Univ. 1@Wataru Fukumoto 1,Masaya Tanaka 1,Keiichirou Yohara 1,Shintarou Yamauchi 1,Kazuyuki Hirama 1,Hiroshi Kawarada 1 |
| 6.3 Oxide Electronics |
| March 27 9:30`17:45 |
| 27a-ZA-@/ II |
| | 1 | Electronic structure of Fe3-xMxO4(M=Zn, Mn) thin films investigated by Hard X-ray Photoemission Spectroscopy | ISIR-Sanken, Osaka Univ. 1, NIMS 2, JASRI/SPring-8 3, RIKEN/SPring-8 4@*Junichi Takaobushi 1, Mizue Ishikawa 1, Issei Satoh 1, Hidekazu Tanaka 1, Tomoji Kawai 1, Shigenori Ueda 2, Jung-Jin Kim 3, Masaaki Kobata 3, Eiji Ikenaga 3, Keisuke Kobayashi 3, Yoshinori Nishino 4, Daigo Miwa 4, Kenji Tamasaku 4 |
| | 2 | Quantitative Analysis of Thin Film Conductivity at Low Temperatures by the Scanning Microwave Microscope | The Univ. of Tokyo@1, The Univ. of Tokushima Graduate School@2, Tohoku Univ.@3@Okazaki Sohei 1, Okazaki Noriaki 2, Sugaya Hidetaka 1, Nishimura Jun 3, Fukumura Tomoteru 3, Kawasaki Masashi 3, Hitosugi Taro 1, Shimada Toshihiro 1, Hasegawa Tetsuya 1 |
| £ | 3 | Structural dependence of terahertz radiation from multiferroic BiFeO3 thin films |
Osaka Univ. 1@*Dhanvir Rana 1, Takahashi Kouhei
1, Krushna Mavani 1, Kawayama Iwao 1,Murakami Hironaru 1, Tonouchi Masayoshi
1 |
| £ | 4 | Disorder effects on the temperature dependent THz radiation from half-doped manganite thin films |
Osaka Univ. 1@*Krushna Mavani 1, Dhanvir Rana 1,
Takahashi Kouhei 1, Kawayama Iwao 1, Murakami Hironaru 1, Tonouchi Masayoshi
1 |
| | 5 | Electrical properties of (La,Pr,Ca)MnO3 nanochannel and its origin derived from random resistor network simulation | ISIR Osaka Univ.@*Yoshihiko Yanagisawa 1, Masaki Kanai, Hidekazu Tanaka, Tomoji Kawai1 |
| | | Break 10:45`11:00 | |
| | 6 | The determination of band diagrams of spin tunneling junction based on oxides heterointerface | The University of Tokyo 1,2, JST CREST 3@*Makoto Minohara 1, Isao Ohkubo 2, Hiroshi Kumigashira 2,3, and Masaharu Oshima 1-3 |
| £ | 7 | Enhanced Thermodynamic Stability of Epitaxial Oxide Thin Films | Univ. of Tokyo 1, JST 2@* Song Jong Hyun 1, Tomofumi Susaki 1, Hwang Harold 1,2 |
| | 8 | Fabrication of La1-XSrxMnO3 Thin Film by Excimer Laser Assisted Metal Organic Deposition | AIST@*Tetsuo Tsuchiya, Kais Daoudi, Tomohiko Nakajima, Toshiya Kumagai |
| | 9 | Electronic state of (SrTiO3)1-x(La0.6Sr0.4MnO3)x mixed-crystal thin films studied by synchrotron-radiation photoemission spectroscopy |
The Univ. of Tokyo 1,2, JST-CREST 3, ISSP 4, Tohoku
Univ. 5@*Takaishi Riichiro 1, Minohara Makoto 2, Horiba Koji 1,3, Kumigashira
Hiroshi 1,3, Fujita Makoto 1, Oshima Masaharu 1,2,3, Lippmaa Mikk 4, Kawasaki
Masashi 3,5 |
| | 10 | Ion Beam Spattering of LBMO Thin Films – Electrical and Magnetic Properties | Mie Univ. 1@Tatsuo Morimoto 1,Atsushi Kamiya 1,Atsuya Akiba 1,Hiroshi Takebayashi 1,Yuanqing Chen 1,*Tamio Endo 1 |
| | 11 | Phase Separation,Positive Magnetoresistance and Magnetostriction Model for LBMO Thin Films | Mie Univ. 1@Yuanqing Chen 1,Tatsuo Morimoto 1, Atsushi Kamiya 1,Atsuya Akiba 1,Makio Ishikawa 1,Tatsuki Machida 1,*Tamio Endo 1 |
| | | Lunch 12:30`13:30 | |
| 27p-ZA-@/ II |
| | 1 | Giant Magnetic Anisotropy of Microwave Absorption on LCMO/YBCO Superlattice | Mie Univ. 1@Tatsuki Machida.1, Hong Zhu.1, Atsuya Akiba.1, Daichi Ashida.1, Atsushi Kamiya.1, Yuanqing Chen.1, Axel Hoffmann.2, Jacobo Santamaria.3, *Tamio Endo.1 |
| | 2 | Crystallization and growth control of electric magnetic material Cr2O3 thin film aimed to electronic device | Nihon Univ. 1@*Nagase Kenjirou 1. Yamada Takayuki 1. Suzuki Naoko 1. Asada Takesi 1. Iwata Nobuyuki 1. Yamamoto Hirosi 1 |
| | 3 | Electric properties of VO2 thin films on metal substrates under p-T-E complex field | JAIST 1@Sakai Joe 1, Imai Syozo 1 |
| | 4 | Preparation of VO2 films on low temperature Ώ-Al2O3 and glass substrates by ICP-assisted reactive sputtering | Tokai Univ. 1@Nihei Yusuke 1,*Okimura Kunio 1 |
| | 5 | Electric field-induced phase transition in VO2 films prepared by ICP-assisted reactive sputtering and memory characteristics | Tokai Univ.1@*Sasakawa Yusuke 1,Okimura Kunio 1 |
| | 6 | Surface plasmon resonance of silver nanoparticles in a VO2 matrix | AIST.1, GIE/SAS.2@Ping Jin, Masato Tazawa, Gang Xu |
| | 7 | Transition behavior of VO2 epitaxial films with different crystal orientations | AIST 1, Linkoping Univ. 2@Ping Jin 1, K. Macak 2, U. Helmersson 2 |
| | | Break 15:15`15:30 | |
| | 8 | Fabrication of epitaxial SnO2 thin film by Excimer Laser Assisted Metal Organic Deposition | Chiba inst. of tech1,AIST 2@*Fumitaka Kato 1,Tetsuo Tsuchiya 2,Tomohiko Nakajima 2,Akio Watanabe 2,Kais Daoudi 2,Kaoru Igarashi 1,Norio Shimizu 1,Tosiya Kumagai 2 |
| | 9 | Gas sensitivity of persistent photoconducting SnO2 thin films | Okayama Univ. 1, ISSP., Univ. of Tokyo 2@*Muraoka Yuji 1, Hiroi Zenji 2 |
| | 10 | Effects of hydrogen plasma exposure on ZnO transparent conductive oxide fabricated by Sol-gel process | Osaka Univ. 1@*Matsuura Tsutomu 1,Kato Shingo 1,Takata Kazumasa 1,Sobajima Yasushi 1,Toyoma Toshihiko 1,Okamoto Hiroaki 1 |
| | 11 | Preparation of AZO Thin Films Deposited by Sputter-Beam Deposition Method | Niigata Univ.1,Tokyo Polytechnic Univ.2@*Higashide Akiyuki 1,Kawakami Ayumu 1,Noguti Touru 1,Shimizu Hidehiko 1,Maruyama Takeo 1,Iwano Haruo 1,Hoshi Youiti 2 |
| | 12 | Transparent Condactive Al-doped ZnO(AZO) films deposited by Gas-flow Sputtering | Aoyama Gakuin univ. 1, Bridgestone Co.Ltd. 2@*Hiroshi Takeda 1, Yasushi Sato 1, Masato Yoshikawa 2, Yoshinori Iwabuchi 2, Yuzo Shigesato 1 |
| | 13 | Carrier density and Temperature dependence of mobility in amorphous IZO films | Kyushu Univ. 1. Idemitsu Kosan Co.,Ltd. 2.@*Makise Kazumasa 1. Funaki Makoto 1. Shinozaki Bunjyu 1. Yano Kouki 2. Shimane Yukio 2. Nakamura Hiroaki 2. Inoue Kazuyosi 2 |
| | 14 | Characterization of transparent conductive Zr-doped In2O3 | AIST Recerch Center for Photovoltaics@*Koida Takashi 1, Kondo Michio 1 |
| | 15 | Effect of deposition temperature on properties of Mn-doped ITO films | Kyoto Univ. 1@*Tanabe Kohei 1, Nakamura Toshihiro 1, Tachibana Kunihide 1 |
| | 16 | Examination of oxygen partial pressure of ITO Thin Films Deposited by Substrate Bias Sputtering | Niigata Univ. 1,Tokyo Polytechnic Univ. 2@Umetsu Takeshi 1,Morishita kazuya 1,Takeuchi Masaki 1,Nakata Yuusuke 1,Shimizu Hidehiko 1,Maruyama Takeo 1,Hoshi Youichi 2 |
| 6.3 Oxide Electronics |
| March 28 9:30`19:00 |
| 28a-ZA-@/ II |
| | 1 | Low Temperature Grouth of ZnO Thin Films by Ion Beam Suputtering | Mie Univ.1@Daichi Ashida 1,Atsuya Akiba 1,Makio Ishikawa 1,Tatsuo Morimoto 1,Chen Yuanqing 1,*Endo Tamio 1 |
| | 2 | Oxygen dependence of ITO thin films deposited by PLD | Osaka Univ. 1, Rigaku Co. 2, KIT 3 @*Toshio Kawahara 1, Takahiro Ohno 1, Tomoji Kawai 1, Ichiro Tobita 2,@Shigemi Kohiki 3 |
| ’ | 3 | Spray CVD of Indium-tin-oxide thin films on non-flat substrates: influence of deposition temperatures. | Tokyo Polytechnic Univ. 1, Kanagawa Industrial Technol. Cent. 2, Tokyo Inst. Technol. 3@*Kondo Takeshi 1, Sawada Yutaka 1, Akiyama Kensuke 2, Funakubo Hiroshi 3, Seki Shigeyuki 1, Wang Meihan 1, Uchida Takayuki 1 |
| ’ | 4 | Creation of oxygen vacancies as as electron carrier source during the growth of ITO films | Kyusyu Kyoritsu Univ. 1@*Kono Akihiko 1,Luo Suning 1, Feng Zongbao 1, Nouchi Norimoto 1, Shoji Fumiya 1 |
| ’ | 5 | Structural characterization of SnO2 thin films grown on the closed packed oxide ion planes of TiO2 | IMR Tohoku Univ. 1, JST-CREST 2@*Okude Masaki 1, Ueno Kazunori 1, Ohtomo akira 1, Kawasaki Masashi 1,2 |
| | | Break 10:45`11:00 | |
| ’ | 6 | Publication of epitaxial TiO2 thin films by using sputtering method with high throughput approach | IMR Tohoku Univ. 1,JST-CREST 2@*Yamasaki Takashi 1, Fukumura Tomoteru 1,Toyosaki Hidemi 1,Nakano Masaki 1,Ueno Kazunori 1,Kawasaki Masashi 1,2 |
| ’ | 7 | High rate deposition of photocatalytic TiO2 films prepared by post-oxidation reverse sputtering. | Miyakonojo National College of Technology. 1, Honda Lock Mfg. Co., Ltd. 2@*Daisuke Noguchi 1, Masahiko Matumiya 1, Fumihiro Sei 2 |
| ’ | 8 | High rate deposition of photocatalytic TiO2 films by oxygen ion beam assisted reactive evaporation method | Tokyo Polytechnic Univ.@*Tetsuya SAKAI, Yuji KUNIYOSHI, Wataru AOKI, Syo EZOE, Tatsuya ENDO, Youichi HOSHI |
| ’ | 9 | Active-Site Imaging of Au-Nanoparticle Catalyst on Rutile-TiO2 by TEM Technology | Tokyo Inst. of Technology 1, CREST 2, JEOL 3@*Takayuki Tanaka 12, Masafumi Ando 1, Kentaro Sano 1, Fumio Hosokawa 23, Hidetaka Sawada 23, Yukihito Kondo 23, Naoki Yamamoto 12, Kunio Takayanagi 12 |
| ’ | 10 | Fabrication and characterization of the Anatase type Titanium Dioxide Nanofiber | Univ. Tokyo1, KAST2@Horie Rumiko1, Hasegawa Tetsuya1, Mutakami Taketoshi2, Fujishima Akira2 |
| £’ | 11 | Theoretical Study on Electronic and Electrical Properties of Titanium Dioxide Bulk and Surface Based on Tight-Binding Quantum Chemical Molecular Dynamics | Dept. Appl. Chem., Tohoku Univ.1,JST-PRESTO 2, NICHe, Tohoku Univ.3@Chen Lv 1, Kei Ogiya1, Agalya Govindasamy 1, Hideyuki Tsuboi 1, Michihisa Koyama 1, Nozomu Hatakeyama 1, Akira Endou 1, Hiromitsu Takaba 1,Momoji Kubo 1, 2, Carlos A. Del Carpio 1, Akira Miyamoto 1, 3 |
| | | Lunch 12:30`13:30 | |
| 28p-ZA-@/ II |
| | 1 | Transparent Conductive Nb-doped TiO2 Films Deposited by DC Magnetron Sputtering Using a TiO2-X Target(II). | Aoyama Gakuin Univ. 1,Asahi Glass Ceramics Co., Ltd. 2@*Akizuki Hideo 1,Miyamura Amika 1,Sato Yasushi 1,Kamiyama Toshihisa 2,Shigesato Yuzo 1 |
| | 2 | Fabrication of polycrystalline Nb:TiO2 TCO films by cosputtering technique using oxide and alloy targets |
KAST 1, Dept. Chem., Univ. Tokyo@*Naoomi Yamada
1, Taro Hitosugi 1,2, Ngoc Lam Huong Hoang 1,2, Junpei Kasai 1, Yutaka Furubayashi
1, Yasushi Hirose 1, Toshihiro Shimada 1,2, Tetsuya Hasegawa 1,2 |
| | 3 | Transport properties of transparent conductor anatase Nb:TiO2 (3) | KAST 1, Dept. Chem. Univ. Tokyo 2, Grad. School of Frontier Sci. Univ. Tokyo 3@*Furubayashi Yutaka 1, Yamada Naoomi 1, Hitosugi Taro 1,2, Hirose Yasushi 1, Yamamoto Yukio 1,3, Shimada Toshihiro 1,2, Hasegawa Tetsuya 1,2 |
| | 4 | Optical and transport properties of Nb/M4+-codoped anatase TiO2 | KAST 1, Univ. Tokyo 2@Furubayashi Yutaka 1, Okumoto Takayuki 2, Chen Tong Lai 1, Yamada Naoomi 1, Hirose Yasushi 1, Hitosugi Taro 1,2, Shimada Toshihiro 1,2, Hasegawa Tetsuya 1,2 |
| | 5 | Electronic properties of anatase Ti1-xNbxO2(TNO) thin films | Univ. of Tokyo, Dept. Chemistry 1, KAST 2, Univ. of Tokyo, Dept. Chemical System Engineering 3@@*Hitosugi Taro 1,2, Kamisaka Hideyuki 3, Yamashita Koichi 3, Yamada Naoomi 2, Furubayashi Yutaka 2, Nogawa Hiroyuki 1, Nakao Shoichiro2, Ueda Atsuki 1, Tsuruhama Tetsukazu 1, N. L. H. Hoang 1, Shimada Toshihiro 1,2, Hasegawa Tetsuya 1,2 |
| | 6 | UV photo-induced effect of anatase Nb,Co-doped TiO2 films | Univ. Tokyo 1, PREST-JST 2@*Kei S. Takahashi 1, Yusuke Kozuka 1, Tomofumi Susaki1, Harold Y. Hwang 1,2 |
| | 7 | Electron transport properties of anatase-TiO2/SrTiO3 heterostructures | Univ. Tokyo 1,KAST 2@*Kunitada Hatabayashi 1,Taro Hitosugi 1,2,Sohei Okazaki 1,Hidefumi Hirabayashi 1,Hidetaka Sugaya 1,Yutaka Furubayashi 2,Yasushi Hirose 2,Toshihiro Shimada 1,2,Tetsuya Hasegawa 1,2 |
| | 8 | Deposition of TiO2 thin films by spray pyrolysis at lower temperature~ <300 | Tokyo Metro.Univ.@*Sato Yuichi 1,Morita Kaname 1,Sugawara Hiroharu 1T |
| | 9 | Low temperature deposition of TiO2 thin films by oxygen-ion assisted reactive evaporation | Tokyo Polytechnic Univ. 1@*Kuniyoshi Yuji 1, Sakai Tetsuya 1, Aoki Wataru 1, Ezoe Syo 1, Endo Tatsuya 1, Hoshi Yoichi 1 |
| | 10 | Hydrogen Generation by Photocatalytic Reaction of Titanium Dioxide Thin Films in High Vacuum | Kyoto Univ. 1,Int'l Innovation Center,Kyoto Univ. 2@*Hattori Masashi 1,Amari Kouichi 1,Noda Kei 1,Kobayasi Kei 2,Horiuchi Toshihiro 1,Matushige Kazumi 1 |
| | | Break 16:00`16:15 | |
| | 11 | Relation between Gasochromic Coloration and Hydrogen Concentration in Tungsten Oxide Thin Films | Tohoku Univ. 1, JAEA 2, Inst. for Materials Research 3@@*Inouye Aichi 1, Takano Katsuyoshi 2, Yamamoto Shunya 2, Nagata Shinji 3, Shikama Tatsuo 3 |
| | 12 | Properties of Electrochromic Device composed by Sputtering TiO2 film | Toyama-pref.Indust.Tech.Center,Centr.Res.Inst. 1, Univ.of Tokyo,RCAST 2@*Honbo Eiji 1,Yamazaki Shigekazu 1,Uchida Satoshi 2 |
| | 13 | Electrochoromic Properties of Mg-doped NiOx Films Deposited by rf Magnetron Sputtering | Aoyama Gakuin Univ 1, Nissan Co. 2@*Sugawara Hideyuki 1, Shigesato Yuzo 1, Sato Yasushi 1, Yamamoto Isao 2 |
| | 14 | Change of optical characteristic and film structure of TiO2 optical thin film for UV irradiation | Tokai Univ. 1,Fine Crystal 2@*Tsubokawa Masaru 1,Murotani Hiroshi 1,Kaite Takashi 2,Wakaki Moriaki 1 |
| | 15 | Electron diffusion length in nanoparticle TiO2 thin film estimated by dye-adsorption depth | Univ.of Electro-Communications 1,21st Century COE program "Cource of Coherent Optical Science" 2,C.I.KASEI 3@*Shoji Yoshifumi 1,Tokue Junya 1,Sano Tatuji 1,Kobayashi Naoki 1,2,Nishikata Akira 3 |
| | 16 | Optical property of N-doped TiO2 thin films | Sophia Univ. 1, Toyota Central R&D Labs. 2@Koji Iijima 1,Msako Goto 1,Shogo Enomoto 1,Hideyuki Kunugita 1,Kazuhiro Ema 1,Yoshitaka Nakano 2,Takeshi Morikawa 2,Masanori Tsukamoto 1,Noriya Ichikawa 1,Hiroshi Sakama 1 |
| | 17 | Crystallographic and Resistance Switching Properties of TiOx Thin Films Annealed under Oxygen Radial Atmosphere |
NRI-AIST 1, ULVAC Inc. 2@Muramatsu Hidenobu 1,
Shima Hisashi 1, Takano Fumiyoshi 1, Akinaga Hiroyuki 1, Nishioka Yutaka
2, Kokaze Yutaka 2, Suu Koukou 2 |
| | 18 | Resistance switching and asymmetric electrical properties in Ti oxide synthesized by reactive sputtering |
NRI-AIST 1, CERC-AIST 2, Grad. Sch. Frontier Sci.,
Univ. Tokyo 3@Shima Hisashi 1, Takano Fumiyoshi 1, Muramatsu Hidenobu 1,
Akinaga Hiroyuki 1, Inoue Isao 2, Takagi Hidenori 2,3 |
| | 19 | Characteristic of photoelectrochemical current of TiO2 electrode prepared by anodic oxidation on Ti metal |
Dept. Appl. Phys. & Chem. Univ. Electro-Commun.1,Course
of Coherent Opt.2, Sci. Univ. Electro-Commun.2@Tamura Satoru 1, Yamamoto
Kana 1, Kobayashi Junya 1, Shen Qing 1,2, Toyoda Taro 1,2 |
| | 20 | Hard x-ray photoelectron spectroscopy in undoped and Al-doped (Zn,Mg)O thin films | National Institute for Materials Science 1@*Ohsawa Takeo 1, Ryoken Haruki 1, Ohashi Naoki 1, Haneda Hajime 1, Hasegawa Akiko 1, Nomoto Daisuke 1, Ueda Shigenori 1, Yoshikawa Hideki 1, Kobayashi Keisuke 1 |
| | 21 | Photocatalytic Lithography used ZnO Thin Films deposited by RF Magnetron Sputtering (II) | Advanced Course of Takamatsu National College of Technology 1@Tsukasa Imajou 1,Hiroshi Okano 1 |
| 6.3 Oxide Electronics |
| March 29 9:30`19:00 |
| 29a-ZA-@/ II |
| | 1 | Exploration of p-type semiconductor films depositable at room temperature -Carrier transport properties of copper-containing chalcogenide films- | ERATO-SORST JST 1, MSL Tokyo Inst. Technol. 2, FCRC Tokyo Inst. Technol. 3, EcoTopia Nagoya Univ. 4@Hidenori Hiramatsu 1, Hiroshi Yanagi 2, Toshio Kamiya 1,2, Masahiro Hirano 1,3, Noriaki Matsunami 4, Hideo Hosono 1,2,3 |
| | 2 | Diode polarity reversal induced by temperature and electric-field dependent permittivity of SrTiO3 | Univ. of Tokyo 1, JST 2@*Susaki Tomofumi 1, Kozuka Yusuke 1, Hwang Harold 1,2 |
| | 3 | Photoinduced insulator-to-metal transition in ZnO/MgZnO heterostructures | Tohoku Univ. IMR 1, JST-PRESTO 2, JST-CREST 3,@*Tsukazaki Atsushi 1, Nakano Masaki 1, Ohtomo Akira 1,2, Kawasaki Masashi 1,3, |
| | 4 | Direct observation of the processes of appearance and disappearance of the current paths in HfO2 thin films on Pt by UHV-C-AFM | Tokyo Univ. 1@*Sasaki Naotaka 1,Kita Koji 1,Kyuno Kentaro 1,Toriumi Akira 1 |
| | 5 | Pulsed laser deposition: Surface flattening of oxide single crystal substrates for epitaxial thin film growth | Univ. Tokyo 1, NIMS 2, Shizuoka Univ. 3@Ohnishi Tsuyoshi 1, Sumiya Masatomo 2, Fuke Shunro 3, Lippmaa Mikk 1 |
| | 6 | Pulsed laser deposition: Nonequilibrium in complex oxide thin films | Univ. Tokyo 1,2@Ohnishi Tsuyoshi 1, Yamamoto Takahisa 2, Lippmaa Mikk 1,2 |
| | | Break 11:00`11:15 | |
| | 7 | High rate oblique deposition of SiO2 films by reactive sputtering | Tokyo Polytechnic Univ. 1, Canon 2@*Hoshi Yoichi 1, Yagi Kanenori 1, Suzuki Eisuke 1, Sakai Akira 2 |
| | 8 | Crucial Role of Ambient Pressure on MgO Nanowire Growth and the Underlying Mechanism | ISIR-Sanken Osaka Univ. 1@*Takeshi Yanagida 1, Kazuki Nagashima 1, Hidekazu Tanaka 1, Tomoji Kawai 1 |
| | 9 | Control of Magnesium Oxide Nanowire Morphologies by Ambient Temperature | ISIR-Sanken Osaka Univ.@*Kazuki Nagashima, Takeshi Yanagida, Hidekazu Tanaka, Tomoji Kawai |
| | 10 | Structural Characterization of Epitaxial BaTiO3 thin film by Synchrotron XRD and STEM | ICR, Kyoto Univ. 1, SPring-8/JASRI 2@*Kawai Masanori 1, Kan Daisuke 1, Isojima Seiichi 1, Kurata Hiroki 1, Isoda Seiji 1, Sakata Osami 2, Kimura Shigeru 2, Shimakawa Yuichi 1 |
| | 11 | HRTEM observation of surface step structures in SrTiO3 single crystal substrates | Tokyo Univ. 1, Tokyo Univ. 2, Tokyo Univ. 3@Eiki Kawase 1, Tsuyoshi Ohnishi 2, Siyoung Choi 3, Yukio Sato 1, Naoya Shibata 3, Teruyasu Mizoguchi 3, Yuichi Ikuhara 3, Takahisa Yamamoto 1 |
| | | Lunch 12:30`13:30 | |
| 29p-ZA-@/ II |
| ’ | 1 | Carrier injection into vanadate Mott quantum wells by electronic reconstruction of polar surface and interface | Univ. of Tokyo 1, JST 2@*Higuchi Takuya 1, Hotta Yasushi 1, Susaki Tomofumi 1, Hwang Harold Y. 1 2 |
| ’ | 2 | Fabrication and characterization of LaNiO3-LaMnO3 composition spread films | The Univ. of Tokyo 1,3,Tokyo Inst. of Technology 2,CREST-JST 4@Kitamura Miho 1,Ishihara Toshihiro 1,Ohkubo Isao 1,Kumigashira Hiroshi 1,4,Matsumoto Yuji 2,Koinuma Hideomi 3,4,Oshima Masaharu 1,4 |
| ’ | 3 | Composition dependence of electronic states and valency in epitaxial LaNi1-xMnxO3 thin films using synchrotron radiation photoemission spectroscopy and X-ray absorption spectroscopy | The Univ. of Tokyo,1,3,Tokyo Inst. of Technology,2, CREST-JST,4@Ishihara Toshihiro 1,Kitamura Miho 1,Yasuhara Ryutaro 1,Ohkubo Isao 1,Horiba koji 1,4, Kumigashira Hiroshi 1,4, Matsumoto Yuji 2,Koinuma Hideomi 3,4,Oshima Masaharu 1,4 |
| ’ | 4 | Electric structure at the interface between SrTiO3 and LaAlO3 studied by synchrotoron radiation spectroscopy | The Univ. of Tokyo 1,JST-CREST 3@Yoshimatsu Kouhei 1,Yasuhara Ryutaro 2,Kumigashira Hiroshi 1-3,Oshima Masaharu 1-3 |
| ’ | 5 | Thermoelectric properties of LaAlO3/SrTiO3 heterointerfaces | Tohoku Univ. IMR 1, JST-PRESTO 2, JST-CREST 3@*Yamada Yasuhiro 1, Ohtomo Akira 1,2, Kawasaki Masashi 1,3 |
| ’ | 6 | Internal Photoemission Characterization of SrRuO3/Nb:SrTiO3 (100) Schottky Junctions |
Univ. of Tokyo 1, JST 2@*Yasuyuki Hikita 1, Tomofumi
Susaki 1, Hidenori Takagi 1, Harold Hwang 1,2 |
| ’ | 7 | Development and Application of a Solid-State Thin-Film Electrochromic Device | Tokyo Univ. of Agri. & Tech. 1@*Yoshimura Hideo 1, Sakaguchi Tomonori 1, Koshida Nobuyoshi 1 |
| £’ | 8 | Properties of β-Ga2O3 Thin Film Oxygen Gas Sensors at High Temperature | GSEST of Shizuoka Univ. 1, "Al I Cuza" Univ. 2, IJRC of Shizuoka Univ. 3@*Bartic Marilena 1, Baban Cristian-Ioan 2, Ogita Masami 3, Isai Masaaki 1 |
| ’ | 9 | Optical and electrical properties of novel wide gap semiconductors LaZnOP | JST ERATO-SORST 1, Tokyo Inst. of Technology@2, Tokyo Inst. of Technology@3@@*K. Kayanuma 1, R. Kawamura 2, H. Hiramatsu 1, H. Yanagi 2, T. Kamiya 1, 2, M. Hirano 1, H. Hosono 1, 2, 3 |
| | | Break 15:45`16:00 | |
| ’ | 10 | Fabrication of an epitaxial insulator on Nb-doped SrTiO3(001) | MSL Tokyo Tech 1, CREST-JST 2, Univ. of To6kyo 3, NIMS 4@*Katayama Masao 1,2, Koinuma Hideomi 2,3,4, Matsumoto Yuji 1,2 |
| ’ | 11 | Fabrication and thermal annealing effect of ionic amorphous oxide semiconductor Sn-Ga-Zn-O based TFTs | MSL Tokyo tech. 1, ERATO-SORST/JST 2, FCRC Tokyo tech. 3@*Youichi Ogo 1, Kenji Nomura 2, Hiroshi Yanagi 1, Toshio Kamiya 1,2, Masahiro Hirano 2 and Hideo Hosono 1,2,3 |
| | 12 | Electric double layer transistor of ZnO single crystal thin film | IMR, Tohoku Univ. 1, JST-CREST 2@*Shimotani Hidekazu 1,2, Haruhiko Asanuma 1, Tsukazaki Atsushi 1, Ohtomo Akira 1, Kawasaki Masashi 1,2, Iwasa Yoshihiro 1,2 |
| ’ | 13 | Electric double layer transistor with a channel of SrTiO3 single crystal |
IMR Tohoku Univ. 1, JST-CREST 2@*Ueno Kazunori
1,Ohtomo Akira 1,Yamada Yasuhiro 1,Shimotani Hidekazu 1,Iwasa Yoshihiro
1 2,Kawasaki Masahi 1 2 |
| ’ | 14 | Conducting polymer / oxide semiconductor Schottky junction | IMR Tohoku Univ. 1, JST-CREST 2@*Nakano Masaki 1, Fukumura Tomoteru 1, Ueno Kazunori 1, Tsukazaki Atsushi 1, Gunji Ryosuke 1, Ohtomo Akira 1, Kawasaki Masashi 1,2 |
| ’ | 15 | Resistive switching of Metal/Pr0.7Ca0.3MnO3/LaNiO3 layered structures induced by applied voltage | Tokyo Univ. 1, MSL,Tokyo Inst. of Technology 2, Inst. of Solid State Physics 3, Graduate School of Frontier Sciences, Tokyo Univ. 4, JST-CREST 5@Harada Takayuki 1, Tsubouchi Kenta 1, Ohkubo Isao 1, Kumigashira Hiroshi 1,5, Ohnishi Tsuyoshi 3, Matsumoto Yuji 2, Lippmaa Mikk 3, Koinuma Hideomi 4,5, Oshima Masaharu 1,5 |
| ’ | 16 | Capacitance characteristics of stacked Metal/Pr0.7Ca0.3MnO3/LaNiO3 resistance switching device |
Univ. of Tokyo 1, Tokyo Inst. of Tech. 2, Inst.
for Solid State Physics 3,CREST-JST 4@*Tsubouchi Kenta 1, Ohkubo Isao 1,
Harada Takayuki 1, Kumigashira Hiroshi 1,4, Matsumoto Yuji 2, Ohnishi Tsuyoshi
3, Lippmaa Mikk 3, Koinuma Hideomi 1,4, Oshima Masaharu 1,4 |
| ’ | 17 | Low temperature behavior of a metallic filament electroformed in a CuO-based resistive switching device | Univ. of Tokyo 1, Univ. of Paris-Sud 2, CREST-JST 3@*Fujiwara Kohei 1, Rozenberg Marcelo 1,2, Nemoto Takumi 1, Tomita Hiroshi 1, Nakamura Yoshinobu 1,3, Takagi Hidenori 1,3 |
| ’ | 18 | Nonvolatile resistive memory effect and rectification on Pt/TiOx/Pt structure |
Dept. of Adv. Mater., Univ. Tokyo 1, CERC-AIST
2, NRI-AIST 3 @*Tomia Hiroshi 1,3, Fujiwara Kohei 1, Inoue Isao 2, Takagi
Hidenori 1,2, Shima Hisashi 3, Akinaga Hiroyuki3 |
| ’ | 19 | Interfacial resistance memory effect on a binary transition metal oxide system | Univ. of Tokyo 1, CREST-JST 2@Matsumoto Ryo 1, Fujiwara Kohei 1, Nakamura Yoshinobu 1,2, Takagi Hidenori 1,2 |
| ’ | 20 | Electrical properties of p-n junctions: La1-xSrxFeO3/SrTi0.99Nb0.01O3 | CREST-JST 1, CERC-AIST 2, IMR, Tohoku Univ. 3, Dept. of Appl. Phys., Univ. of Tokyo 4@*Yamamoto Akio 1, Sawa Akihito 1,2, Akoh Hiroshi 1,2, Kawasaki Masashi 2,3, Tokura Yoshinori 2,4 |
| ’ | 21 | Dependence of AlSiO Film Characteristics on Si concentration | Osaka Univ. 1@*Komatsu Naoyoshi 1,Kurimoto Hirofumi 1,Matsunouch Keiko 1,Kimura Chiharu 1,Aoki Hidemitsu 1,Sugino takashi 1 |
| 6.3 Oxide Electronics |
| March 30 9:00`15:00 |
| 30a-ZA-@/ II |
| | 1 | Field-effect transistors using Zn-In-O films and their compositional dependence |
Canon Inc. 1, Tokyo Inst. Tech. 2@*Tatsuya Iwasaki
1, Naho Itagaki 1, Tohru Den 1, Hideya Kumomi 1, Kenji Nomura 2, Toshio
Kamiya 2, and Hideo Hosono 2 |
| | 2 | Fabrication of oxide field-effct transistors with reduced channel area. | Univ.Tokyo 1, ISSP 2@*Nishio Kazunori 1 2, Sato Taisuke 1 2, Shibuya Keisuke 1 2, Ohnishi Tsuyoshi 1 2, Lippmaa Mikk 1 2, |
| | 3 | Direct study of the Resistive Switching Characteristics in NiO/Pt films using conducting AFM: Role of Oxygen.06 | FUJITSU LABORATORIES LTD.@*Chikako Yoshida 1, Kenntaro Kinosita 1, Masaki Aoki 1, Yoshihiro Sugiyama 1 |
| | 4 | Temperature dependence of resistance in NiO thin films for ReRAM | Kyoto Univ. 1@Suzuki Ryota 1, Suda Jun 1, Kimoto Tsunenobu 1 |
| | 5 | A proposal of a parallel resistance model for the conduction mechanism of ReRAM. | Fujitsu Labs.@Kinoshita Kentaro, Noshiro Hideyuki, Sato Yoshihiro, Yagaki Shinya, Yoshida Chikako, Aoki Masaki, Sugiyama Yoshihiro |
| | | Break 10:15`10:30 | |
| | 6 | Non-volatile resistive switching memory devices with a nanoscale current-confined structure | Adv.Mat.Res.Labs. SHARP Corp. 1, CERC-AIST 2, IMR Tohoku Univ. 3, Univ. of Tokyo 4@*Ogimoto Yasushi 1, Tamai Yukio 1, Kawasaki Masashi 2,3, and Tokura Yoshinori 2,4 |
| | 7 | Electric field induced resistive switching of Ti1-xMxO2(M=Nb,Y) | KAST 1, Univ. of Tokyo 2 @Shoichiro Nakao 1, Taro Hitosugi 1,2, Yasushi Hirose 1, Yutaka Furubayashi 1, Naoomi Yamada 1, Toshihiro Shimada 1,2 and Tetsuya Hasegawa 1,2 |
| | 8 | Resistive Random Access Memory of AlOx thin film and the characteristics | National Inst. for Materials Science 1,MISUZU Research & Development Co.,Ltd. 2@*Nigo Seisuke 1,2,Kitazawa Hideaki 1,Kato Seiichi 1,Kido Giyuu 1,Uno Yoshio 2 |
| | 9 | Electric field induced resistance-switching effect of polycrystalline SrTiO3/Pd multilayered chip devices | Murata manufacturing Co., Ltd.@*Hirose Sakyo 1, Nakayama Akinori 1, Niimi Hideaki 1 |
| | 10 | Tail state and carrier transport in ionic amorphous oxide semiconductor In-Ga-Zn-O | ERATO-SORST/JST 1, Tokyo Tech. 2,3 @*Kenji Nomura 1, Tosho Kamiya 1,2, Hiromichi Ohta 1, Masahiro Hirano 1, Hideo Hosono 1,2,3 |
| £ | 11 | Relationship between local atomic structure and carrier transport for ionic amorphous oxide semiconductor In-Ga-Zn-O system | ERATO-SORST/JST1, Tokyo Tech.2,4, JASRI3@ @*Kenji Nomura 1, Tosho Kamiya 1,2, Hiromichi Ohta 1, Uruga Tomoya 3, Masahiro Hirano, Hideo Hosono 1,2,4 |
| | | Lunch 12:00`13:00 | |
| 30p-ZA-@/ II |
| | 1 | Photoluminescence of In2O3 prepared by annealing of rf-sputtered InN thin films | Gunma Univ. 1@*mori masaki 1.nagaoka naomi 1.miyazaki takayuki 1.adachi sadao 1 |
| | 2 | Photovoltaic properties of CdS quantum dot sensitized solar cell passivated with ZnS |
Dept. Appl. Phys. & Chem. Univ. Electro-Commun.1,
Course of Coherent Opt. 2, Sci. Univ. Electro-Commun. 2, Graduate School
of Engineering, Osaka Univ. 3@Sato Akira 1, Kobayashi Junya 1, Tachibana
Yasuhiro 3, Shen Qing 1,2,*Toyoda Taro 1,2 |
| | 3 | Characterization of photovoltaic conversion efficiency of CdSe-sensitized TiO2 electrodes |
Dept. Appl. Phys. & Chem., the Univ. Electro-Commun.
1, Course of Coherent Opt. Sci., the Univ. Electro-Commun. 2,@*Shen Qing
1,2, Kobayashi Junya 1, Diguna J Lina 2, Toyoda Taro 1,2 |
| | 4 | High-rate deposition of photocatalytic WO3 films with visible light activity by gas flow sputtering. | Aoyama Gakuin Univ. 1, Bridgestone Co. 2@*Fukuyama Mizuki 1, Kikuchi Maiko 1, Iwabuchi Yoshinori 2, Yoshikawa Masato 2,Sato Yasushi 1, Shigesato Yuzo 1 |
| | 5 | Photoelectrochemical Properties of Iron Oxide Films Prepared by RF Magnetron Sputtering | Sharp Co.@*Yokosawa Yuji,Uda Keichiro |
| | 6 | Large-area nano patterning of epitaxial oxide films by molybdenum lift-off | JST-CREST 1, ISIR-SANKEN Osaka Univ. 2@Suzuki Naoki 1, Tanaka Hidekazu 1,2, Yamanaka Satoshi 2, Lee Bong Kuk 1, Lee Hea Yeon 1,2, Kawai Tomoji 1,2 |
| | 7 | Optical properties of SbOX films for optical recording prepared by reactive rf magnetron sputtering | Tokai Univ. 1,Spinet Inc. 2@*Murata Yoshimasa 1,Okimura Kunio 1,Gotoh Hironori 2 |
| £ | 8 | Effects of low temperature buffer layer on properties of Cu2O thin films grown by reactive rf-magnetron sputtering | Tsukuba University@B. S. Li, K. Akimoto, and T. Sakurai |
| 6.4 Novel Materials for Thin Films |
| March 28 10:00`18:45 |
| 28a-SQ-@/ II |
| | 1 | Switchable Mirror Thin Film Based on Magnesium-Titanium Alloy | AIST 1@*Yoshimura Kazuki 1, Bao Shanfu 1, Tajima Kazuki 1, Yamada Yasusei 1, Okada Masahisa 1 |
| | 2 | Improvement of far-IR reflectance in VO2-based multifunctional smart window | AIST@Ping Jin, Masato Tazawa, Kazuki Yoshimura, Hirosi Kakiuchida, Gang Xu |
| | 3 | Thermochromism of titanium-vanadium oxide films | AIST@*Kakiuchida Hiroshi 1,Jin Ping 1,Tazawa Masato 1 |
| | 4 | High rate deposition of optics Nb2O5 thin films by reactive dc magnetron sputtering using CO2 gas. |
Sony Corp. 1@*Taketomo Mikihiro 1, Oshima Yoshihiro
1, Takahama Yoshitaka 1, Ikegami Takashi 1, Oshima Kentaro 1, Kawashima
Toshitaka 1, Osako Junichi 1 |
| | 5 | BiOx films prepared by reactive rf magnetron sputtering and its optical response to laser irradiation | Tokai Univ. 1, Spinet Inc. 2@Kamimura Takahisa 1,*Okimura Kunio 1,Gotoh Hironori 2 |
| | 6 | Preparation of Ge-Sb-Te System Thin Film for Phase Change Random Access Memory by Magnetron Sputtering on Small Hole Pattern | Ulvac,Inc.@*Kikuchi Shin, Nishioka Yutaka, Kimura Isao, Jimbo Takehito, Yoshida Yoshiaki, Ueda Masahisa, Kokaze Yutaka, Suu Koukou |
| | | Break 11:30`11:45 | |
| | 7 | Preparation of one-dimensional magnetophotonic crystals by sol-gel method | Grad. Sch. Sci. Technol., Keio Univ. 1@* Inui Chie 1, Tsuge Yosuke 1, Fujihara Shinobu 1, Shiratori Seimei 1, Sato Tetuya 1 |
| | 8 | Control of the surface structure with nanoasperity by using self-assembly methods: Application to super-hydrophilic and super-hydrophobic films | Grad. Sch. Sci. Technol., Keio Univ. 1, SNT Co., Ltd. 2@*Tsuge@Yosuke 1, Shiratori Seimei 1,2 |
| | 9 | Density distribution of anatase TiO2 films | Nagaoka Univ.Tech. 1@*Nagao Tatsuya 1, Ohshio Shigeo 1, Nishino Junichi 1, Saitoh Hidetoshi 1 |
| | 10 | Plasma-assisted deposition of hydrophilic TiO2 films on Metal | Ibaraki Univ. 1@Kumagai Koki 1,Kato Jota 1,Miyamura Toru 1,*Yamauchi Satoshi 1 |
| | 11 | Measurement of Electric Conductivity of C60 Derivatives Monolayer on Au Film with Micro-Electrodes Prepared by FIB Deposition | College of Sci. & Technol., Nihon Univ. 1@*Matsuyama Fumihiko 1, Oda Tomoyasu 1, Iwata Nobuyuki 1, Yamamoto Hiroshi 1 |
| | | Lunch 13:00`14:00 | |
| 28p-SQ-@/ II |
| | 1 | Fabrication of Metal Nano Line Array Possessing High Aspect Ratio by Electroless Plating and Size Reduction lithography | RIKEN 1@Miyoshi Kentaro 1, Fujikawa Shigenori 1, Kunitake Toyoki 1 |
| | 2 | Basic research of combinatorial arc plasma deposition using an alloy cathode | Tokyo Tech,Frontier 1, Tokyo Tech,P&I Lab. 2@*Seiichi Hata 1, Toshimitu Fujita 2, Ryusuke Yamauchi 2, Junpei Sakurai 2, Akira Shimokohbe 2 |
| | 3 | Fabrication of HfO2-Cu2O composition spread thin film by using combinatorial PLD and evaluation its electrical property. | National Institute for Materials Science 1@* Haemori Masamitsu 1, Chikyow Toyohiro 1 |
| | 4 | Study of fabrication process of FGM thin films using PLD method under high gravity field | Kyushu Univ. 1@*Kurogi Yuko 1, Nishiyama Takashi 1, Nagayama Kunihito 1 |
| | 5 | Fabrication of FGM thin films by PLD method combined with the strong centrifugal field | Kyushu Univ.@*Nishiyama Takashi, Kurogi Yuko, Nagayama Kunihito |
| | 6 | Magnetron discharge under pressure range of 10-2 Pa using a sputtering device with a very strong and field controlled magnet | IMRA Material R&D Co., Ltd.1,Nagoya Univ. 2@*Yousuke Yanagi 1, Yoshitaka Itoh 1, Hiroshi Ikuta 2 |
| | 7 | Velocity distribution of particles ejected from Sn targets by pulsed laser ablation using a rotation-type velocity filter | IMRAM,Tohoku Univ. @Murata Hiromichi 1,Nakamura Yoshimasa 1,Hurudate Minaji 1,Tsuru Toshihide 1,Ejima Takeo 1,Yamamoto Masaki 1 |
| | 8 | Influence of grain size and grain orientation on the frequency of surface acoustic wave | Tohoku Univ. 1, Hasselt Univ. 2, IMEC 3@Sekiguchi Atsuko 1, Vanstreels Kris 2, D'Haen Jan 2, Brongersma Sywert 3 |
| | 9 | Copper plating of conductive past film | Chiba Inst. of Tech.@Nakazaki Takahiro, Sugiura Osamu |
| | | Break 16:15`16:30 | |
| | 10 | Effect of O2 flow ratio on the epitaxial orientation of Rh thin fi lm sputtered under the low-deposition-rate condition on A-plane sapphire | Kitami Institute of Technology@*Kiyohiko Kato,Katsutaka Sasaki,Yoshio Abe |
| | 11 | Nanostructure and magnetic properties of FePt nanoparticles on TiN underlayers with controlled grain sizes | The Univ. of Tokyo 1@*Yoshiko Tsuji 1, Suguru Noda 1, Yukio Yamaguchi 1 |
| | 12 | Formation of Mg-Ni Alloy Thin Films by Alternate Deposition of Mg Film and Ni Film | Niigata Univ. 1@Aikoh Takashi 1,Kimura Daisuke 1, Nagahama Daisaku 1,Ito Yosihiro 1,Hirata Makoto 1,Shimizu Hidehiko 1,Maruyama Takeo 1, Iwano Haruo 1,Kakami Takahiro 1 |
| | 13 | Unusual Properties of Ag Nanoparticles and Compact Nanoparticle Coatings Prepared by Laser Fragmentation of Silver Oxide Micropowders | Graduate School of Engineering Kyoto Univ. 1@*Nishimura Naoya 1, Kawasaki Mitsuo 1, Kawasaki Masahiro 1 |
| | 14 | Epitaxial growth of (001)TiN thin films on (001)Ge by low temperature process | Kitami Inst. Tech. 1, Takuma NCT 2@*Yanagisawa Hideto 1, Sasaki Katsutaka 1, Abe Yoshio 1, Shinkai Satoko 2 |
| | 15 | Optical properties of a Zn3N2 film prepared by the MOCVD method | Shizuoka Univ. 1@Hiroshi Koyama 1, Masayuki Fujimoto 1 |
| | 16 | Electrical and optical properties of boron oxynitride thin films | Osaka Univ. 1@*Sota Hiroshi 1. Chikamatsu Kentaro 1. Kimura Chiharu 1. Aoki Hidemitsu 1. Sugino Takashi 1 |
| | 17 | Characterization of Cu-doped Boron Nitride thin films | Osaka Univ. 1@*Chikamatsu kentaro 1,Sota Hiroshi 1,Kimura Chiharu 1,Aoki Hidemitsu 1,Sugino Takashi 1 |
| | 18 | Preparation of AlN films by means of CVD used iodide source under atmospheric pressure | Shizuoka Univ. 1, Fukui Univ. of Technology 2@*Iwane Hiroki 1, Nakamura Takato 1, Takahashi Naoyuki 2 |
| 6.4 Novel Materials for Thin Films |
| March 29 10:00`18:45 |
| 29a-SQ-@/ II |
| | 1 | Preparation of SrAl2O4 Thin films on ZnO under layer | Niigata Univ. 1@*Watanabe Yuji 1,Imai Takaki 1,Kimura Naoto 1,Shimizu Hidehiko 1,Maruyama Takeo 1,Iwano Haruo 1, Kwakami Takahiro 1 |
| | 2 | Effect of ZnO thin films by hydrogen plasma(II) |
Toyo Univ. 1,Microdenshi 2,Consultant Office PTC
3,@Sata Youhei 1,Nakayama Takamiti 2,Kashiwagi Kunihiro 1,Takizawa Tutomu
2, Sakamoto Yuichi 3 |
| | 3 | Growth of ZnO single-crystalline layer by UHV sputtering method | Tokyo Denki Univ@*Matsuo Yohei 1, Abe Takuya 1, Sekine Masafumi 1, Miyagawa Takuya 1, Fujii Wataru 1, Sinoda Hiroyuki 1, Mutsukura Nobuki 1 |
| | 4 | Growth of Al-doped ZnO single-crystalline layer by UHV sputtering method | toukyoudenki Univ. 1@*Abe takuya 1, Matsuo youhei 1, Wakamatsu yasushi 1, Hitomi yoshihiro 1, Fujii wataru 1, Shinoda hiroyuki 1, Mutsukura nobuki 1 |
| | 5 | Homoepitaxial growth of ZnO by UHV sputter method | Tokyo Denki Univ. 1@*Shinoda Hiroyuki 1, Abe Takuya 1, Matsuo Yohei 1, Fujii Wataru 1, Mutsukura Nobuki 1 |
| | 6 | Optical constant evaluation of ITO(Indium Tin Oxide) transparent conducting films | Tokai Univ. 1, Geomatec Co. 2@*Yaeda Asami 1, Sata Yasuyuki 1, Kanzaki Yousuke 1, Wakaki Moriaki 1, Abe Minoru 2, Ujihara Akira 2 |
| | | Break 11:30`11:45 | |
| | 7 | Electrical Properties of In2O3 Films with a Wide Range of Carrier Concentrations | Geomatec 1, Sumitomo Metal Mining 2, Chiba Univ. 3@*Nakazawa Hiromi 1, Ito Yuko 1, Matsumoto Eiji 1, Adachi Kenji 2, Aoki Nobuyuki 3, Ochiai Yuichi 3 |
| | 8 | Film deposition of transparent conductive In-Ga-Zn oxide by PLD method | The University of Tokushima 1, Takuma National College of Technology 2@*Inoue Kenichi 1, Tominaga Kikuo 1, Tsuduki Takashi 1, Mikawa Michio 2, Moriga Toshihiro 1 |
| | 9 | Infuence of additional Ga2O3 on transparent conductive oxide films of In2O3-ZnO |
Tokushima Univ. 1@*Kikuo Tominaga 1, Daisuke Takada
1, Kouji Shimomura 1, Hiroshi Suketa 1, Keisuke Takita 1, Keiichirou Murai
1, Toshihito Moriga 1 |
| | 10 | Properties of transparent conducting amorphous ZnO-In2O3 films deposited at RT on PC and PET substrates | Graduate School of Advanced Technology and Science, The Univ. of Tokushima 1@*Takita Keisuke 1,Suketa Hirosi 1,Takada Daisuke 1,Simomura Kouji 1,Tominaga Kikuo 1,Murai Keiitirou 1,Moriga Tosihiro 1 |
| | 11 | Evaluation of Nb-doped TiO2 ilms deposited by PLD method | Graduate School of Advanced Technology and Science, The University of Tokushima. 1,Takuma National College of Technology. 2@*Taki Akira 1,Yamaguchi Takahumi 1,Mikawa Michio 2,Murai keiichirou 1,Moriga Toshihiro 1 |
| | | Lunch 13:00`14:00 | |
| 29p-SQ-@/ II |
| | 1 | Effects of thermal annealing for Nb or Ta-doped TiO2 thin films deposited by rf magnetron sputtering | Graduate School of Advanced Technology and Science 1, Faculty of Engineering 2, The Univ. of Tokushima@Yusuke kaneko 1, Toshinari Kobayashi 2, Hiroyuki Murai 2, Yoshinori Miyamoto 1, Kikuo Tominaga 1, Kei-ichiro Murai 1, Toshihiro Moriga 1 |
| | 2 | Characterization of CuScO2+X(0001) epitaxial films prepared by oxygen radicals irradiation | TRI, Osaka Prefecture 1@*Kakehi Yoshiharu 1,Satoh Kazuo 1 |
| | 3 | Growth of Al whiskers by HT-GLAD on the surface with tailored nanomorphology | Kyoto Univ. 1@*Hamachi Kenji 1,Suzuki Motofumi 1,Nagai Koji 1,Kinoshita Sadamu 1,Nakajima Kaoru 1,Kimura Kenji 1 |
| ’ | 4 | Formation of Fe-Si whiskers by reactive oblique angle deposition | Kyoto Univ. 1@*Nagai Kouji 1, Suzuki Motofumi 1, Nakajima Kaoru 1, Kimura Kenji 1 |
| ’ | 5 | Dependence of Substrate DC Bias Voltage on Structural and Surface Properties of Copper Thin Films Using Magnetron Sputtering with Multipolar Magnetic Plasma Confinement Assisted by Inductively Coupled Plasma | Hiroshima Inst.of Tech. 1,Toyo Advanced Technologies Co.,Ltd. 2@*Yuuki Muraoka 1,Yuji Kobayashi 1,Yoshikazu Ono 1,Keishi Kawabata 1,Keiji Okamoto 2,Atunori Araki 2,Hirohumi Jinnouchi 2 |
| ’ | 6 | Characterization of TiAlN Film Prepared by Y-shape Filtered-Arc-Deposition System |
Toyohashi Univ. Technol. 1, Onward Ceramic Coating
Co., LTD. 2, Itoh Optical Industrial Co., LTD. 3, Kanagawa Indust. Technol.
R. C. 4@*Tanoue Hideto 1, Hikosaka Hiroki 1, Takikawa Hirofumi 1, Hasegawa
Hiroshi 2, Taki Makoto 2, Kamiya@Masao 3, Kumagai Masao 4 |
| ’ | 7 | Thermal Diffusivity Measurement on AlN Thin Films Using Thermoreflectance Method | Aoyama Gakuin Univ. 1, AIST 2@*Okabe Takashi 1, Ohtsuka Tetsuro 1, Yagi Takashi 2, Taketoshi Naoyuki 2, Baba Tetsuya 2, Miyamura Amica 1, Sato Yasushi 1, Sigesato Yuzo 1 |
| ’ | 8 | Optical switching property of All-Solid-State Switchable Mirror with Ta2O5 Thin Film by reactive sputtering | AIST 1@*Kazuki Tajima1, Yasusei Yamada1, Shanhu Bao1, Masahisa Okada1, Kazuki Yoshimura1 |
| ’ | 9 | Characterization of Nitrogen Doped AlSiO Insulating Film. | Maizuru Natfl Col. of Tech. 1, Osaka Univ. 2@*Tanaka Hirotaka 1, Komatsu Naoyoshi 2, Kurimoto Hirofumi 2, Kimura Chiharu 2, Aoki Hidemitsu 2, Wada Masaru 1, Sugino Takashi 2 |
| | | Break 16:15`16:30 | |
| ’ | 10 | MBE growth of (InxGa1-x)2O3 thin films | Kyoto Univ. Dept. Electron. Sci. Eng. 1, Int. Innov. Cent. 2@*Oshima Takayoshi 1, Fujita Shizuo 2 |
| ’ | 11 | Influence of introducing argon gas of TiO2 optical thin film for IAD deposition | Tokai Univ. 1.SHINCRON Co.,Ltd 2.@*Kobayashi Daisuke 1.Arai Kentaro 1.Nakayama Kazuhiko 1.Shiraishi Ran 1.Murotani Hiroshi 1.Wakaki Moriaki 1.Iida Yoshitaka 2. |
| ’ | 12 | Time dependence of internal stress in H4 optical thin film | Tokai Univ.1,SHINCRON CO.,LTD 2@*Nakayama Kazuhiko 1,Arai Kentaro 1,Kobayashi Daisuke 1,Shiraishi Ran 1,Murotani Hiroshi 1,Wakaki Moriaki 1,Iida Yoshitaka 2 |
| ’ | 13 | Fractal analysis of cross-section of coating film | Nagaoka Univ. of Tech. 1@*Morimoto Hiromi 1, Kawaguchi Shinnosuke 1, Ohsio Shigeo 1, Nishino Junichi 1, Saitoh Hidetoshi 1 |
| ’ | 14 | Activation energy and frequency factor during atmospheric CVD process in vapor phase | Nagaoka Univ. Tech. 1@*Kawaguchi Shinnosuke 1, Ohshio Shigeo 1, Nishino Junichi 1, Saitoh Hidetoshi 1 |
| ’ | 15 | Development of a new PLD-laser microscope system for in-situ analysis of multi-component metallic thin films | MSL Tokyo Tech. 1,JST-CREST 2,IMR Tohoku Univ. 3@*Hiraoka Miki 1,Katayama Masashi 1,2, Kimura Hisamichi 3,Hukuhara Mikio 3,Inoue Akihisa 3,Matsumoto Yuji 1,2 |
| ’ | 16 | Influence of Substrate Surface Modification on Growth Orientation of HAp Thin Film [II] | Tokyo inst. of Tech. 1, Tokyo Medical and Dental Univ. 2@*Takao Kobayashi 1, Wakana Hara 1, Wataru Tsuji 1, Kimihiro Yamashita 2, Mamoru Yoshimoto 1 |
| ’ | 17 | Fabrication of [oxide semiconductor/ferromagnetic metal] hybrid epitaxial thin films by LaserMBE and hydrogen reduction. | Tokyo Inst. of Tech. 1, Namiki Prec. Jewel 2@*Matsuda Akifumi 1, Kasahara Masayasu 1, Watanabe Takahiro 1, Akita Yasuyuki 1, Koyama Kouji 2, Yoshimoto Mamoru 1 |
| ’ | 18 | Create and control the nanostructure of glass surface by glassnanoimprint | Tokyo Inst. of Tech.@Yasuyuki Akita 1,Akifumi Matsuda 1,Wakana Hara 1,Masayasu Kasahara 1,Mamoru Yoshimoto 1 |
| 6.4 Novel Materials for Thin Films |
| March 30 10:00`13:15 |
| 30a-SQ-@/ II |
| | 1 | Development of Capable Electrets(I) `Increase of Surface Potential at Cover Structure with Organic Spin-On-Glass Layer` | SANYO Electric Co., Ltd. 1@*Murayama Yoshiki 1, Matsubara Naoteru 1, Naruse Yohko 1, Mabuchi Katsuji 1, Miyamoto Hideaki 1, Honma Kazunari 1, Hirano Hitoshi 1 |
| | 2 | Development of Capable Electrets(II) `Increase of Surface Potential at Three-Dimensional Structure` | SANYO Electric Co., Ltd.@*Naruse Yohko 1, Matsubara Naoteru 1 , Murayama Yoshiki 1, Shishida Yoshinori 1, Izumi Makoto 1, Honma Kazunari 1, Hirano Hitoshi 1 |
| | 3 | Preparation of lithium secondary batteries by using RF magnetron sputtering method | Shizuoka Univ. 1@*Isai Masaaki 1,@Chonan Yuji 1, Tojo Yasusi 1, Nakamura Koichi 1, Hosokawa Takayuki 1, Kurachi Yuji 1, Horino Tomoyosi 1 |
| | 4 | Temperature dependence of electrical characteristics and electric conduction mechanism of Au/Nb2O5/Nb capacitor | Nihon Univ. 1,Hitachi AIC Inc. 2@*Yaginuma Kanji 1,Ikeda Masanori 1,Shimizu Hirofumi 1,Endo Hideharu 2,Shibasaki Yoko 2,Hama Yoshiki 2,Kitamura Takehisa 2,Iida Kazuyuki 2 |
| | 5 | Statical dielectric constant of HfO2-ZrO2 thin films | Nagaoka Univ. Tech. 1@*Maruyama Hayato 1, Ohshio Shigeo 1, Nishino Junichi 1, Saitoh Hidetoshi 1 |
| | 6 | Capacitor Properties and Leakage Current Mechanism of Thin Film Capacitors Made of Zr-Al Anodized Film | Kitami Inst. Tech. 1, Takuma NCT 2@*Shibata Tomoharu 1, Mikuni Naohiro 1, Shinkai Satoko 2, Sasaki Katsutaka 1, Yamane Misao 1, Abe Yoshio 1 |
| | | Break 11:30`11:45 | |
| | 7 | Temperature-programmed-desorption analysis for water desorption from MgO films |
Nagaoka Univ. Tech. 1@*Kawaguchi Shinnosuke 1,
Ohshio Shigeo 1, Nishino Junichi 1, Saitoh Hidetoshi 1 |
| £ | 8 | Effects of Target Surface Oxidation on Crystallization of YSZ Film Deposited by Reactive Sputtering on Glass Substrate | Jpn. Adv. Inst. Sci. & Tech. (JAIST)@*Sukreen Hana 1, Nishioka Kensuke 1, Horita Susumu 1 |
| | 9 | Effect of annealing temperature on electrical properties of the CeO2 films prepared by MOCVD | Hosei Univ. 1,Semiconductor Process Laboratory Co., Ltd. 2,Canon ANELVA Co. 3@*Keiichi Nakamura 1,Kazunari Tagui 1, Masatsugu Ogawa 1,Kiyotaka Saito 1,Setsu Suzuki 2,Keizi Ishibashi 3,Yasuhiro Yamamoto 1 |
| | 10 | Electron-Beam-Induced Orientation-Selective-Epitaxial Growth of CeO2(100)/Si(100) | Iwaki Meisei Univ. 1@*Inoue Tomoyasu 1, Saito Tomohiro 1, Shida Shigenari 1 |
| | 11 | Electronic and near edge structure of alumina by first principle density functional theory | Fujitsu Labs. 1@*Anazawa Toshihisa 1, Tsukada Mineharu 1 |
| | 12 | alumina substrate without charging problem | National Inst. Materials Sci. 1, Charles Univ. 2 @Yoshitake Michiko 1, Lykhach Yaroslava 1, Nemsak Slavomir 1,2 |
| 6.5 Surface Physics and Vacuum |
| March 27 |
| 27a-P1-@/ II |
| |
|
Poster Session
27a-P1-1`35 9:30`11:30 |
| | 1 | Phosphate-base self-assembled organic monolayer on ultra-thin alumina films | National Inst. Materials Sci.@Yoshitake Michiko 1, Tsud Nataliya 1 |
| | 2 | Adsorption structure and work function of glutaric acid on Cu(110) surface | AEMC NIMS 1@*Yagyu Shinjiro 1, Yoshitake Michiko 1, Chikyow Toyohiro 1 |
| | 3 | D abstraction by H atom on Ru(0001) surfaces | Kyushu Inst. of Tech. 1@*Yamauchi Takashi 1, Misumi Tetsuya 1, Toyota Masashi 1, Namiki Akira 1 |
| | 4 | Thermal desorption of water molecule on Ru(0001) | Kyushu Inst. Tech. 1@*Misumi Tetsuya 1, Yamauchi Takashi 1, Nakashima Yasunari 1, Kuratomi Takanori 1, Namiki Akira 1 |
| | 5 | TOF measurement of scattered He atom and D2 molecule from H-covered Si(100)-2x1 surface | Kyushu Inst. of Tech. 1@Yuzuru Narita 1, Siro Ueno 1, Arifur Khan 1, Yasuhiro Kihara 1, Shinichiro Sato 1, Akira Namiki 1 |
| ’ | 6 | Temperature dependence of initial oxidation process on Si(001) studied by real-time optical measurements. | Yokohama Nat'l Univ. 1, Nat'l Defence Academy 2@Shin-ya Ohno 1, Jun-ichi Takizawa 1, Hiroaki Kobayashi 1, Jyunya Koizumi 1, Fumitake Mitobe 1, Ken-ichi Shudo 1, Takanori Suzuki 2, Masatoshi Tanaka 1 |
| | 7 | Correlation between metastable adsorbate and Si oxidation states in O2 adsorption on Si(111)-7~7 at room temperature | Japan Atomic Energy Agency@Akitaka Yoshigoe, Yuden Teraoka |
| | 8 | Emission kinetics of Si atom during initial oxidation on Si(001) surface (XI)FDependence on p- and n-type conductivity | Tohoku Univ. 1@Ogawa Takakuwa 1, Takakuwa Yuji 1 |
| | 9 | Transformation of Small Triangular Gratings on Si(001) Substrates by High Temperature Annealing | ISIR, Osaka Univ.@*Jun Nakamura 1,Koichi Sudoh 1, Hiroshi Iwasaki 1 |
| | 10 | Observation of Terraces with Different Atomic Structures on Step-Controlled Sapphire Surfaces | Yokohama National Univ. 1, NAMIKI PRECISION JEWEL CO.,LTD. 2, CREST/JST 3@*Ryuji Aoki 1, Tarou Arakawa 1, Atsuko Takeuchi 2, Toshio Ogino 1,3@ |
| | 11 | Ordering mechanisms of self-organized nanofacets on vicinal SiC(0001) surfaces | RIES/Hokkaido@*Fujii |
| | 12 | Quantitative LEED analysis on vicinal SiC(0001) surfaces with periodic nanofacets | Kyushu Univ.@*Hayashi Kenjiro 1, Shirasawa Tetsuro 1, Mizuno Seigi 1, Tanaka Satoru 2, Tochihara Hiroshi 1 |
| | 13 | Low pressure oxidation and Carbon nanocap formation of 6H-SiC(000-1) | Dept. of Materials Science & Engineering Meijo Univ. 1, Meijo Univ. 21st CENTURY COE program "Nano Factory" 2, Japan Fine Ceramics Center 3@*Fujita Naomi 1, Tanioku Kenji 1, Maruyama Takahiro 1,2, Naritsuka Shigeya 1,2, Kusunoki Michiko 3 |
| | 14 | LEEM observations of graphite thin films formed on 6H-SiC(0001) | NTT Basic Research Labs. 1@*Hibino Hiroki 1, Kageshima Hiroyuki 1, Maeda Fumihiko 1, Nagase Masao 1, Kobayashi Yoshihiro 1, Yamaguchi Hiroshi 1 |
| | 15 | XMCDPEEM observations of magnetic domain structures of submicron-scale magnetic elements | NTT Basic Research Labs. 1, JASRI 2, Tohoku Univ. 3@Sekine Yoshiaki 1, *Hibino Hiroki 1, Maeda Fumihiko 1, Watanabe Yoshio 2, Guo FangZhun 2, Nitta Junsaku 3 |
| | 16 | Observation of local magnetic domains by spin-polarized low energy electron microscopy (SPLEEM) | Fundamental Electronics Research Inst., Osaka Electro-Communication Univ. 1, Department of Physics and Astronomy, Arizona State Univ. 2@*Suzuki Masahiko 1, Hashimoto Michihiro 1, Ueda Masato 1, Yasue Tsuneo 1, Koshikawa Takanori 1, Bauer Ernst 2 |
| | 17 | Growth Process of Ag on In/Si(111) by SR-XPEEM | OCEU 1,JASRI 2,RIKEN 3,JAEA 4@Ueda Masato 1,Suzuki Masahiko 1,Hashimoto Mitihiro 1,Guo Fang-Zhun 2,Matsuoka Yoshiaki 1,Kinoshita Toyohiko 2,Kobayashi Keisuke 2,Shin Shik 3,Oura Masaki 3,Takeuchi Tomoyuki 3 |
| | 18 | Influence of Stochastic Coulomb Interaction on Resolution of LEEM/PEEM | Osaka Electro-Commun. Univ. 1, ELETTRA 2, Arizona State Univ. 3@*Nomura Eiichi 1, Shiimura Shouhei 1, A. Locatelli 2, T.O. Mentes 2, E. Bauer 3, Yasue Tsuneo 1, Koshikawa Takanori 1 |
| | 19 | Simulation analysis of an electron-mirror aberration corrector for LEEM/PEEM | Osaka Electro-Commun. Univ. 1, Kaihatsu-Jyutaku 21 2, EOS Tsuno 3@*Nomura Eiichi 1,2, Tsuno Katsushige 1,3, Yasue Tsuneo 1, Koshikawa Takanori 1 |
| | 20 | A study of the initial stage of Pd Adsorption on Pt(111) using Scanning Tunneling Microscopy (STM) |
Osaka Prefecture Univ. 1, Toyota Tecnological Inst.
2@*Narihiro Eisuke 1, Umezawa Kenji 1, Ohira Yutaka 2, Yoshimura Masamichi
2 |
| | 21 | Observation of Vicinal Au(788) Surface Electronic Structure by STM | Tokyo Univ. Fac. of Engineering 1, Tokyo Univ. Grad. Sch. of Frontier Science 2, RIKEN 3@*Usman Brianto 1, Susumu Shiraki 1, Michiaki Ohara 2, Ryuichi Arafune 2, Noriaki Takagi 1,2, Maki Kawai 1,2,3 |
| | 22 | STM and SR-XPS Observation on RT Adsorption of Oxygen Molecules at Si(110)-16~2 Surfaces | CIR, Tohoku Univ. 1, Japan Atomic Energy Agency 2@*Togashi Hideaki 1, Takahashi Yuya 1, kato Atsushi 1, Konno Atsushi 1, Suemitsu Maki 1, Asaoka Hidehito 2, Yoshigoe Akitaka 2, Teraoka Yuden 2 |
| | 23 | STM and SR-XPS Observation on Initial Stage of High-Temperature Oxidation of Si(110)-16~2 Surfaces | CIR,Tohoku Univ. 1,Japan Atomic Energy Agency 2 @*Takahashi Yuya 1,Togashi Hideaki 1,Kato Atsushi 1,Konno Atsushi 1,Suemitsu Maki 1,Asaoka Hidehito 2,Yoshigoe Akitaka 2,Teraoka Yuden 2 |
| | 24 | Interpretation using the zeta model for the phosphorus-based III-V semiconductor surface | Res. Inst. of Electronics Shizuoka Univ. 1@*Shimomura Masaru 1, Daisuke Ichikawa 1, Yasuo Fukuda 1 |
| | 25 | Formation of ultrahigh density Ge1-xSnx quantum dots on ultrathin Si oxide films | The university of Tokyo 1 CREST-JST 2, Nagoya University ESI 3 @Masada Akiko 1, Nakamura Yoshiaki 1,2, Cho Sung-Pyo 2,3, Tanaka Nobuo 2,3, Ichikawa Masakazu 1,2 |
| | 26 | Observation of quantum-confinement effect in Ge1-xSnx quantum dots using scanning tunneling spectroscopy | The Univ. of Tokyo 1, CREST-JST 2@*Nakamura Yoshiaki 1,2, Masada Akiko 1, Ichikawa Masakazu 1,2 |
| | 27 | Observation of composition and strain of the Ge/Si(001) dots by total-reflection X-ray diffraction | IMR Tohoku Univ. 1, JASRI 2, CIR Tohoku Univ. 3@Hanada Takashi 1, Sumitani Kazushi 2, Sakata Osami 2, Buckmaster Ryan 1, Yao Takafumi 1, 3 |
| | 28 | Structural Evaluation of Ge Nanowires on Si(113) by X-ray Diffraction and Scattering | Rigaku Corporation 1,NTT Basic Research Laboratories, NTT Corporation 2@*Kazuhiko. Omote 1, Yoshiyasu. Ito 1, Tomoaki. Kawamura 2, Hiroo. Omi 2 |
| | 29 | Soft X-ray MCD Studies for Inter-faces in Fe/Si Multilayers Using Standing Waves | IMRAM Tohoku Univ. 1@*Kosuke Sato 1, Takayoshi Jinno 1, Akira Arai 1, Mihiro Yanagihara 1 |
| | 30 | Interface structure of multilayered films deposited by CVD technique operated under atmosphere | Nagaoka Univ. of Tech. 1@*Kishimoto Shinichi 1, Ohshio Shigeo 1, Nishino Jyunichi 1, Saitoh Hidetoshi 1 |
| | 31 | Surface structure analysis by Patterson function with LEED I-V curve II | Fac.Eng., Kobe Univ.@*Kuzushita Takuma 1, Murata Atsuko 1, Yamamoto Akinori 1, Urano Toshio 1 |
| | 32 | Conductance of atom-sized contacts of Si (II) | Kyoto Univ. 1, Osaka Pref. Univ. 2, UNISOKU 3, Kyoto Univ IIC. 4@*Iwanari Tomoki 1, Toyo Sakata 2, Yutaka Miyatake 3, Kurokawa Shu 4, Sakai Akira 4 |
| | 33 | The piezoelectric LT-MFM observations of magnetic domain structures in the nanometer scale | Dept. Chem., Univ. of Tokyo1, JSPS2, SII-NT3, UNISOKU4@Hidetaka Sugaya1,2, Yoshiharu Shirakawabe3, Kazuo Chinone3, Yutaka Miyatake4, Toshihiko Nagamura4, Taro Hitosugi1, Toshihiro Shimada1, Tetsuya Hasegawa1 |
| | 34 | STM imaging of Kondo effect |
Department of Applied Physics Osaka Univ. 1, Center
for the Promotion of Research on Nanoscience and Nanotechnology Osaka Univ.
2, Physics Department De La Salle Univ. 3@*Fukumura Syuji 1, Minamitani
Emi 1, Son Do Ngoc 1, Rahman Mahmudur 1, Nakanishi Hiroshi 1, Dino Wilson
2,3, Kasai Hideaki 1 |
| | 35 | AFM imaging of Kondo effect |
Department of Applied Physics Osaka Univ. 1, Center
for the Promotion of Research on Nanoscience and Nanotechnology Osaka Univ.
2, Physics Department De La Salle Univ. 3@*Fukumura Syuji 1, Minamitani
Emi 1, Son Do Ngoc 1, Rahman Mahmudur 1, Nakanishi Hiroshi 1, Dino Wilson
2,3, Kasai Hideaki 1 |
| 6.5 Surface Physics and Vacuum |
| March 28 |
| 28a-P3-@/ II |
| |
|
Poster Session
28a-P3-1`25 9:30`11:30 |
| ’ | 1 | Surface Properties of Sc-O/W(100) System at High Temperature -Change of Sc-LMM Peak Profile with Oxygen Exposure- | Osaka Univ. 1@Nakanishi Yousuke 1, Nagatomi Takaharu 1, Takai Yoshizo 1 |
| ’ | 2 | Influence of Carbon Contamination on Electron-Induced Damage of SiO2 | Osaka Univ. 1,NIMS 2@*Nakamura Hiraku 1,Nagatomi Takaharu 1,Takai Yoshizo 1,Kimura Takashi 2,Fukushima Sei 2,Ogiwara Toshiya 2,Tanuma Shigeo 2 |
| ’ | 3 | Ion-Induced Secondary Electron Yield of MgO Thin Film -Effect of heating, ion irradiation, and oxygen absorption- | Graduate School of Eng., Osaka Univ. 1, Matsushita Electric Industrial Co., Ltd. 2@*Kuwayama Takeshi 1, Nagatomi Takaharu 1, Takai Yoshizo 1, Morita Yukihiro 2, Nisitani Mikihiko 2, Kitagawa Masatoshi 2 |
| ’ | 4 | Measurement of Magnesium Oxide (MgO) Sputtering Yields by Noble Gas Ions with a Low-Energy Mass Analyzed Ion Beam System | CAMT Osaka Univ. 1, AIST 2, Matsushita Electric Industrial Co., Ltd. 3@*Kiyohiro Hine 1,Satoru Yoshimura 1, Kazumasa Ikuse 1, Masato Kiuchi 1 2, Jun Hashimoto 3, Masaharu Terauchi 3, Mikihiko Nishitani 3, Satoshi Hamaguchi 1 |
| | 5 | Surface Structure of TiO2/Al2O3 Thin Film Prepared by RF Magnetron Sputtering Using Oxygen Radical | Tokyo University of Science 1@Tokita Shinji 1, *Higuchi Tohru 1, Minamikawa Masaki 1, Hattori Takeshi 1, Tsukamoto Takeyo 1 |
| | 6 | Photoconductivity of non-doped SrTiO3 | Tokyo Univ. 12@*Urata Yasufumi 1, Ohnishi tsuyoshi 2, Lippmaa Mikk 2 |
| | 7 | In-situ heating Experiments of Hydrogen Blistering | Aichi Inst. Tech.@*Iwata Hiroyuki, Takagi Makoto, Tokuda Yutaka |
| £ | 8 | Improvement of the dryer performance in a single dip-type wafer cleaner | Samsung Electronics Co. 1@* Oh Jungmin 1, Kim Youngok 1, Han Jeongnam 1, Lee Kuntack 1, Hong Changki 1, Cho Hangu 1, Moon Jootae 1 |
| | 9 | Friction of Ag/Si(111) studied by synchrotron X-ray diffraction | Nagoya Univ. 1, Ube National College of Technology 2, Toyota Technological Inst. 3,@*Kobayashi Hiroaki 1, Akimoto Kouichi 1,Gotou Minoru 2, Honda Fumihiro 3, |
| | 10 | Fabrication of nanowires using transport phenomenon of In by hydrogen radicals | Tokyo Univ. Agri. & Tech 1,Nippon Inst. of Tech.2@*Takeuchi Ryota 1,Sato Naru 1,Aoyagi Minoru 2,Kamisako Kouichi 1 |
| | 11 | Size control of In catalyst using hydrogen radicals for fabricating nanowires | Tokyo Univ. of Agri. & Tech.@*Takeuchi Ryota 1,Jeon Minsung 1,Kamisako Kouichi 1 |
| | 12 | Fabrication of Nano Metal Pattern Using Colloidal Crystals as Mask | Kogakuin Univ. 1@*Hidetaka Asoh 1, Seiji Sakamoto 1, Fusao Arai 1, Sachiko Ono 1 |
| | 13 | Observation of cadmium adsorption on goethite by thermal desorption | Toho Univ. 1, Kitasato Univ. 2@*Takagi Shouji 1, Ito Kentaro 1, Eguchi Masahiro 1, Gotoh Tetuji 1, Takamatsu Rieko 2 |
| | 14 | Computer Simulation Study of Water/Iron Interface | ITC Univ. of Toyama 1, Faculty of Eng. Univ. of Toyama 2@*Nunomura Norio 1, Sunada Satoshi 2, Majima Kazuhiko 2 |
| £ | 15 | Control and design of ortho-para H2 conversion yield on magnetic surfaces by computational materials design (CMD) | Department of Precision Science & Technology and Applied Physics, Osaka Univ. 1, Center for the Promotion of Research on Nanoscience and Nanotechnology, Osaka Univ. 2, Physics Department, De La Salle Univ. 3@*Muhida Rifki 1, Agusta M. Kemal 1, Rahman Mahmudur 1, Nakanishi Hiroshi 1, Diño Wilson Agerico 2,3, Kasai Hideaki 1 |
| | 16 | Research of hydrogen atom adsorption and diffusion on Pd(111) surface and in the subsurface by quantum methods | Division of Precision Science & Technology and Applied Physics, Osaka Univ. 1, Center for the Promotion of Research on Nanoscience and Nanotechnology, Osaka Univi. 2, Department of Physics, Osaka Univ. 3,@De La Salle Univ. 4@*Nobuki Ozawa 1,Arboleda Nelson Jr. Buntimil 1,Tanglaw Abat Roman 1, Hiroshi Nakanishi 1,Wilson Agerico Diño 2-4,Hideaki Kasai 1 |
| | 17 | Change to Mg(OH)2 on MgO(001) surface by water adsorption | Toho Univ. 1@Makita Ooko 1, Takagi Shouji 1, Gotoh Tetsuji 1 |
| | 18 | Electron stimulated desorption study of physisorbed hydrogen | Gakushuin Univ. 1@*Kawashima Hiroshi 1,Kawarabuki Taku 1,Tazawa Toshihiko 1,Arakawa Ichiro 1 |
| | 19 | Computer simulation of Impact-Collision Ion-Scattering Spectroscopy | Osaka Prefecture Univ.@*Ohta Yuji 1, Narihiro Eisuke 1, Umezawa Kenji 1 |
| | 20 | Strain mapping measurement for AD-PZT thin films on Si by using Raman microscope and strain replica method | Waseda Univ.ASMeW1, NEC FERL2, AIST3, Waseda Univ.Sci & Eng4@@Masahiro Yanagisawa1, Masafumi Nakada2,Jun Akedo3, Tetsuya Osaka4 |
| | 21 | In-depth (nm) Chemical State Analysis by Grazing Incidence Electron-induced X-ray Emission Spectroscopy | Faculty of Engineering, Utsunomiya Univ. 1, Graduate School of Engineering, Utsunomiya Univ. 2@Kashiwakura Takayuki 1, Suzuki Mitsumasa 2 |
| | 22 | Development of a spin flipper for spin-polarized He* beam scattering experiments under high magnetic fields | NIMS@Kurahashi Mitsunori 1, Yamauchi Yasushi 1 |
| | 23 | Rarefied Gas Flow Induced through a Pair of Nets with Different Temperatures | Kyoto Univ. 1@Hiroshi Sugimoto 1, Takayuki Yamada 1 |
| | 24 | Xray-free Ionization GaugeiIIIj | Fac.Eng., Kobe Univ. 1, Kure Coll.Tech. 2@Yamaguchi Shun 1, Kanaji Toru 1, Ikeda Tomohiro 1, Tanaka Makoto 2, Urano Toshio 1 |
| | 25 | Outgassing Property for Chemically Polished Titanium Materials | Graduate School of Science and Engineering, Yamaguchi Univ.1, CT division San-ai Plant Industries 2@Katsunobu Ishizawa1,2, Hiroki Kurisu1, Setsuo Yamamoto1, Takeru Nomura2, Nobuyuki Murashige2 |
| 6.6 Probe Microscopy |
| March 29 9:00`19:15 |
| 29a-SL-@/ II |
| ’ | 1 | Development of a small amplitude FM-AFM with a high spring constant Si cantilever | Dept.of Electronic Sci. & Eng., Kyoto Univ. 1, Int'l Innovation Center, Kyoto Univ. 2, CREST/JST 3@*Hosokawa Yoshihiro 1, Ichii Takashi 1, Kobayashi Kei 2, Matsushige Kazumi 1, Yamada Hitoshi 1 3 |
| ’ | 2 | Non-Contact Control of Rotating-Disk Type Ferroelectric Data Storage System Based on NC-SNDM | R.I.E.C.Tohoku Univ.1@*Uda Tomoya 1,Hiranaga Yoshiomi 1,Cho Yasuo 1 |
| ’ | 3 | Direct actuation of AFM cantilever using laser-induced photothermal expansion | Kanazawa Univ,JST-CREST@*Hayato Yamashita 1, Takayuki Uchihashi 1,2, Noriyuki Kodera 1, Atsushi Miyagi 1, Daisuke Yamamoto 2, Toshio Ando 1,2 |
| ’ | 4 | Probe Position Control Technique in Ferroelectric Data Storage System | RIEC.Tohoku Univ. 1@*Kenkou Tanaka 1, Yasuo Cho 1 |
| | 5 | Development of STM combined with synchrotron radiation light | Univ. Tokyo, ISSP 1@*Eguchi Toyoaki 1, Okuda Taichi 1, Matsushima Takeshi 1, Kataoka Akira 1, Harasawa Ayumi 1, Akiyama Kotone 1, Kinoshita Toyohiko 1, Hasegawa Yukio 1 |
| | | Break 10:15`10:30 | |
| | 6 | Nano-scale Surface Analysis using SR-STM system : Attempt at various surface systems |
Osaka Univ. 1, RIKEN/SPring-8 2, ICORP(JST) 3,
Osaka Pref. Univ. 4, PREST(JST) 5, Nanosystem Functionality Center, NIMS
6@*Takahashi Koji 1,2, Saito Akira 1,2,3, Takagi Yasumasa 2, Hanai Kazuhisa
2,4, Hosokawa Hiromasa 1,2, Tanaka Yoshihito 2, Kikkawa Akiko 2, Akai-Kasaya
Megumi 1,5, Ishikawa Tetsuya 2, Shin Shik 2, Kuwahara Yuji 1,2,3, Aono Masakazu
3,6 |
| | 7 | Development of high temperature scanning Hall probe microscopy (HT-SHPM) utilizing AlGaN/GaN Hall probe |
Tokyo Inst of Technology. 1, QNERC. 2@H. Osawa1,
Z. Primadani1, A. Sandhu1, 2 |
| | 8 | Development of atomic force microscopy with wide-band magnetic modulation | Osaka Univ. 1, JST-PRESTO 2@Takuma Chikamoto 1, *Masami Kageshima 1,2, Yoshitaka Naitoh 1, Yasuhiro Sugawara 1 |
| | 9 | SQUID Probe Microscope Combined with Scanning Tunneling Microscope | NIMS 1, SNCT 2, Osaka Univ. 3@*Minoru Tachiki 1, Tadayuki Hayashi 1,2, Hideo Itozaki 1,3 |
| | 10 | STM electric field modulation spectroscopy based on bias modulation | Univ. of Tokyo 1, CREST-JST 2@*Nobuyasu Naruse 1,2, Yutaka Mera 1,2 , Yoshiaki Nakamura 1,2, Masakazu Ichikawa 1,2, Koji Maeda 1,2 |
| | 11 | High speed scanner for high speed AFM |
Osaka Univ. 1, CREST 2@*=Yan Jun Li 1 2 Naritaka
Kobayashi 1 2, Yoshitaka Naitoh 1 2, Masami Kageshima 1 2,Yasuhiro Sugawara
1 2 |
| | | Lunch 12:00`13:00 | |
| 29p-SL-@/ II |
| | 1 | Fabrication of high-coercivity FePt coated MFM tip using plasma oxidized Si tip |
Akita Univ. 1, Nitto Optical Co., LTD. 2@*Hitoshi
Saito 1, Shunji Ishio 1, Daisuke Yatsuyanagi 1, Genta Egawa 1, Akira Ito
2, Hiroshi Kawamura 2 |
| | 2 | Development of MFM probe with Carbon Nanotube probe | Daiken Chemical Co., Ltd1,Osaka Pref. Univ.2, Osaka Univ.3@*Shigenobu Yamanaka1,Takashi Okawa1,Seiji Akita2,Yoshikazu Nakamaya3 |
| | 3 | Imaging Sidewall Surfaces of an ErSi2 Nanocluster by STM with a Metal-coated Carbon Nanotube Tip | Osaka Univ. 1@*Murata Yuya 1, Motoyoshi Kenji 1, Kimura Takehiko 1, Matsumoto Geng 1, Honda Shin-ichi 1, Katayama Mitsuhiro 1 |
| | 4 | Characterization of Single-Walled Carbon Nanotube Grown on Metal Tip Apex | Grad. Sch. Eng., Osaka Univ. 1@*Wongwiriyapan Winadda 1, Murata Yuya 1, Ohmori Takafumi 1, Motoyoshi Kenji 1, Kimura Takehiko 1, Inoue Satoshi 1, Honda Shin-ichi 1, Katayama Mitsuhiro 1 |
| | 5 | Characterizing Multi-wall carbon nanotube tip for atomic force microscope | AIST 1, NTT-AT 2, Daiken Chemical 3@*Hiroshi Itoh, Shingo Ichimura 1, Akio Takano 2, Hisataka Takenaka 2, Satoru Kurosawa 2, Sigenobu Yamanaka 3 |
| | 6 | Electric properties of single carbon nanofibers grown onto tips of scanning probe microscope by ion irradiation | OLYMPUS Corp. 1, Nagoya Inst.Technol 2@*Masashi Kitazawa 1.2,Ryo Ohta 1,Junya Tanaka 2,Tatuhiko Okita 2,Yoshitaka Sugita 2,Masaki Tanemura 2 |
| | 7 | Development of a reference material for probe shape of the scanning probe microscope | NTT-AT 1, AIST 2, Tokyo Univ. Science 3, NIMS 4@Akio Takano 1, Satoru Kurosawa 1, Hisataka Takenaka 1, Hiroshi Itoh 2, Toshiyuki Fujimoto 2, Shingo Ichimura 2, Yoshikazu Homma 3, Disuke Fujita 4 |
| | 8 | Conductance Imaging of InAs Nanowires on a GaAs Substrate Using a Nanogap Electrode Probe | NTT Basic Research Labs.@*Nagase Masao 1, Yamaguchi Hiroshi 1 |
| | 9 | Development of a multi-probe AFM utilizing optical beam deflection method | Dept. of Electronic Sci. & Eng., Kyoto Univ. 1,LP/JST 2,Int'l Innovation Center, Kyoto Univ. 3,CREST 4@*Tsunemi Eika 1,Satoh Nobuo 1,2,Kobayashi Kei 3,Matsushige Kazumi 1,Yamada Hirofumi 1,4 |
| | 10 | Automatic approaching of an independently driven tip to another tip for dual-tip scanning tunneling microscope | Graduate School of Integrated Science, Yokohama City Univ.@*Matsui Atsuteru, Shigeta Yukichi |
| | 11 | Electrical transport through nanowires formed on Si substrate: discussion of leakage current through substrate | NIMS 1, JST ICORP 2, KAIST 3, Univ. of Tsukuba 4@Osamu Kubo 1,2, Do Kyung Lim 3, Yoshitaka Shingaya 1,2, Tomonobu Nakayama 1,2,4 |
| | 12 | In situ SEM observation of a tip grown using a pencil-type scanning probe microscope | JST Innovation Plaza Ishikawa. 1, FUJI IMVAC, INC. 2, JAIST. 3, Univ. of Tsukuba. 4, SORST JST. 5@Y. Ohukubo 1, M. Tani 2, K. Matsumura 3, T. Arai 4,5, M. Tomitori 3 |
| | | Break 16:00`16:15 | |
| | 13 | Currents through single molecular junction of alkanedithiols measured by repeated formation of break junction in UHV-STM | Tokyo Inst. of Technology@*Nishikawa Ayano 1, Fujihira Masamichi 1 |
| | 14 | Forces and conductances in an Au/dithiolate/Au junction | Tokyo Institute of Technology@*Shintaro Fujii, Masamichi Fujihira |
| | 15 | Observation of Thin Film of Directly Thiolated Fullerenes by Scanning Tunneling Microscopy | Nano High-Tech Research Center, Toyota Technol. Inst.@*Hirokazu Fukidome 1, Masaru Sekido 1, Masamichi Yoshimura 1, Masatomi ohno 1, Kazuyuki Ueda 1 |
| | 16 | First-principles calculations for B/P-doped Si(111)H surfaces | Univ. of Electro-Communications 1@*Hirayama Motoi 1, Nakamura Jun 1, Natori Akiko 1 |
| | 17 | Bias@Dependence of LBH on dopant atom in GaAs(110) | kyoto Univ. 1, IIC Kyoto Univ. 2@Kobayashi Kengo 1, Kurokawa Shu 2,Sakai Akira 2 |
| | 18 | Theoretical study of tunneling conductance and local tunneling barrier height on Si(100) surface | Nihon University 1, University of Tokyo 2, CREST-JST 3@*Totsuka Hideomi 1,3, Watanabe Satoshi 2,3 |
| | 19 | Metastable structure of Si(110) surface:5~8 reconstruction | Nano High-Tech Research Center, Toyota Technological Inst.@*Ohira Yutaka 1, Yoshimura Masamichi 1, Ueda Kazuyuki 1 |
| | 20 | Observation of initial oxidation process on Si(110)-"16~2" surface | Nano High-Tech Research Center, Toyota Technological Inst.@*Ohira Yutaka 1, Yoshimura Masamichi 1, Ueda Kazuyuki 1 |
| | 21 | An STM Observation of Atomically Flat Ag Films Epitaxially Grown on Si(111)7x7 Surfaces | Tokyo Institute of Technology 1@Yoshinori Sano 1, Yurika Ogawa 1, Hiroyuki Hirayama 1 |
| | 22 | STM Observation of Initial Cu Growth on Ni(110) surface | Osaka City Univ. 1, Osaka Prefecture Univ. 2@*Fukuda Tsuneo 1, Iwamoto Kazuo 1, Umezawa Kenji 2, Nakayama Hiroshi 1 |
| | 23 | Nanolithography on SiO2/Si(111) using ultra high vacuum STM (2) | 21st Century COE Meijo Univ. 1, Sci.&Technol. Meijo Univ. 2@Yo YAMAMOTO 1, Hiroki KITANO 2, Midori MORI 2, Kenji TANIOKU 2, Takahiro MARUYAMA 1,2, Shigeya NARITSUKA 1,2 |
| £ | 24 | Hetero-epitaxy of Ge on Si(110) studied by STM | Toyota Tech. Inst. 1@*Subhashis Gangopadhyay 1, Yoshimura Masamichi 1, Ueda Kazuyuki 1 |
| 6.6 Probe Microscopy |
| March 30 9:00`14:30 |
| 30a-SL-@/ II |
| | 1 | High resolution NC-AFM imaging on the surface of SrF2/Si(111) | Osaka Univ. 1@Seino Yoshihide 1, Yoshikawa Shota 1, Nagayasu Tomonori 1, Morita Seizo 1 |
| | 2 | NC-AFM study of highly oxidized phase of Cu (110) surface | Osaka Univ. 1@Shohei Kishimoto 1, *Masami Kageshima 1, Yoshitaka Naitoh 1, Yasuhiro Sugawara 1 |
| | 3 | Local surface structure change on the Pb/Ge(111) surface system using non-contact atomic force microscopy | Osaka Univ. 1, JST 2@Ohiso Akihiro 1, Sugimoto Yoshiaki 1, Abe Masayuki 1 2, Morita Seizo 1 |
| | 4 | Observation of atomic dipole moment on Si(111)7x7 surface using NC-SNDM | R.I.E.C. Tohoku Univ.@*Hirose Ryusuke 1, Cho Yasuo 1 |
| | 5 | Identification of hydroxyl species on TiO2(110)-1x1 by a novel photoswitchable molecular tip | Tokyo Inst. of Tech. 1, PREST JST 2, Univ. of California at Santa Barbara 3@*Takamatsu Daiko 1, Yamakoshi Yoko 3, Fukui Ken-ichi 1,2 |
| | | Break 10:15`10:30 | |
| | 6 | An evaluation of chemical patterns prepared by silica beads method | Tokyo Inst. of Technology 1@*Akiyama Miki 1,Fujita Mitsuhiro 1,Fujihira Masamichi 1 |
| | 7 | Non-contact AFM Image of Surface Structure of Rubrene Single Crystal | Tohoku Univ. 1, JEOL 2@Sakata Masafumi 1, Noda Hiroyuki 1, Sato Tomoshige 2, Kitamura Shinichi 2, *Itaya Kingo 1 |
| | 8 | AFM Based Dynamic Potential Measurement by Frequency Shift with Amplitude Feedback | JST-CREST 1, ISIR, Osaka Univ. 2@*Takagi Akihiko 1, Yamada Fumihiko 2, Matsumoto Takuya 1,2, Kawai Tomoji 2 |
| | 9 | FM-mode potential measurement of insulating surface and its application to aqueous solution | ISIR, Osaka Univ. 1, CREST-JST 2@*Matsumoto Takuya 1,2, Yamada Fumihiko 1, Okamoto Kazuki 1, Takagi Akihiko 1,2, Kawai Tomoji 1,2 |
| | 10 | Solvation Force Measurements by Dynamic Force Microscopy |
JST/Adv. Meas. & Analysis 1,Dept.of Electronic
Sci. & Eng. Kyoto Univ. 2,Int'l Innov. Center Kyoto Univ. 3, AIST 4@*Kimura
Kenjiro 1,2,Horiuchi Takashi 2,Kobayashi Kei 1,3,Hirata Yoshiki 4,Matsushige
Kazumi 2, Yamada Hirofumi 1,2 |
| | 11 | Mechanical relaxation of living cells probed by atomic force microscopy | Hokkaido Univ. RIES 1, Sousei 2@*Okajima Takaharu 1, Tanaka Masaru 1, Tsukiyama Shuusaku 2, Kadowaki Tsubasa 1, Yamamoto Sadaaki 2, Shimomura Masatsugu 1, Tokumoto Hiroshi 1 |
| | | Lunch 12:00`13:00 | |
| 30p-SL-@/ II |
| | 1 | Prototyping of cantilever controller for tapping-mode atomic force microscopy: verification experiment toward implementation of the time-delayed feedback control | Kyoto Univ. 1@*Kohei Yamasue 1, Takashi Hikihara 1 |
| | 2 | Time-resolved electrostatic force detection by frequency-shift mode. | ISIR, Osaka Univ. 1, CREST-JST 2@*Matsumoto Takuya 1,2, Kawai Tomoji 1,2 |
| | 3 | Refinement of Conditions of Point-Contact Current Imaging Atomic Force Microscopy for Molecular-Scale I-V Measurements | Institute for Molecular Science 1, SOKENDAI 2, ISIR, Osaka University 3, CREST, JST 4@*Hirofumi Tanaka1,2,4, Takashi Yajima1,2, Takuya Matsumoto3,4, Takuji Ogawa1,2,4 |
| | 4 | Frequency Noise Analysis of Small Amplitude FM-AFM in Liquid and its Applications to Bio-molecule Imaging | Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, JST/Adv. Meas. & Analysis 2, Int'l Innovation Center, Kyoto Univ. 3, AIST 4@*Takashi Horiuchi 1, Kenjiro Kimura 1,2, Kei Kobayashi 2,3, Yoshiki Hirata 4, Kazumi Matsushige 1, Hirofumi Yamada 1,2 |
| | 5 | Quantitative analysis of AFM tip shape | AIST 1, NTT-AT 2, TDK 3@*Hiroshi Itoh, Shingo Ichimura 1, Akio Takano 2, Hisataka Takenaka 2, Satoru Kurosawa 2, Katsaki Yanagiuchi 3 |
| | 6 | Theory of microscopy using the interparticle radiation force under electronic resonance conditions | CREST-JST, Osaka Pref. Univ. (Grad. Sch. of Eng. & Inst. for Nanofabrication Res.)@*Takuya Iida, Hajime Ishihara |