| 14 Amorphous and Microcrystalline Materials |
| 14.1 Fundamental Properties and Evaluations |
| March 28 9:00`12:15 |
| 28a-ZW-@/ II |
| | 1 | Liquid-Phase Synthesis of Polymer-Coated Ni nanoparticles | Kyushu Univ. 1@Miho Yamauchi 1, Hiroshi Kitagawa 1 |
| | 2 | Photoconductivity in organic Triphenyldiamine (TPD) films:Nitrogen effects | Gifu Univ. 1, Osaka Prefecture Univ. 2@ Kenichi Yonezawa 1, Tomohiko Sato 1, Nazrul Anuar 1, Koichi Shimakawa 1 , Hiroyoshi Naito 2 |
| | 3 | Photoconductivity in organic Triphenyldiamine (TPD) films: Oxygen effects | Gifu Univ. 1,Osaka Prefecture Univ. 2@*Sato Tomohiko 1,Yonezawa Kenichi 1,Nazrul Anuar 1,Shimakawa Koichi 1,Naito Hiroyoshi 2 |
| | 4 | PL Lifetime Distribution of a-Si:H under Strong Electric Field (electric field dependence of effective temperature) | Faculty of Eng. Tokyo Polytechnic Univ. 1,Faculty of Eng. Gifu Univ. 2@*Ohrui Nobuaki 1,Kobayashi Shinichi 1,Fujihashi Chugo 1,Aoki Takeshi 1,Shimakawa Kouichi 2 |
| | 5 | Temperature dependence of thermalization gap in a-Si:H | Nihon Univ. 1,Yamaguchi Univ. 2@*Hoshino Takuya 1,Ogiwara Chisato 2,Murayama Kazuro 1 |
| | 6 | Hopping-random-walk at localized band tail states with exponential distribution in a-Si:H | Nihon Univ. 1@*Fujisaki Tatsuya 1,Nomura Yukio 1,Murayama Kazuro 1 |
| | 7 | Light-induced changes in the energy distribution of hole trap states in a-Si:H | AIST 1@Sakata Isao 1,Kamei Toshihiro 1,Yamanaka Mitsuyuki 1 |
| | | Break 10:45`11:00 | |
| £ | 8 | Study on electron spin resonance of hydrogenated microcrystalline silicon-germanium alloys | AIST 1, ITRI 2@*Chia-Wen Chang 1,2, Takuya Matsui 1, Michio Kondo 1 |
| | 9 | Low Energy Optical Absorption Spectra of High-deposition-rate microcrystalline-Si Thin Films evaluated by CPM | Grad. School of Eng. Science, Osaka Univ.@*Fukumori Taiga 1,Kurihara Masanori 1,Sobajima Yasushi 1,Toyama Toshihiko 1,Okamoto Hiroaki 1 |
| | 10 | Carrier transport studies on high deposition rate mc-Si thin films | Grad. School of Eng. Science, Osaka Univ. 1@Nishino Mitsutoshi 1, Kawabe Tomoyuki 1, Sobajima yasushi 1, Toyama Toshihiko 1, Okamoto Hiroaki 1 |
| | 11 | Nano-scale characterization of Si film solar cells by scanning near-field optical microscopy | Gifu Univ.1, Gunma Univ.2@Yoshiki Yamamoto1,Tamihiro Gotoh2,Zhenka Shen1,Syunnsuke Ogawa, Norimitu Yoshida1,Shuuichi Nonomura1 |
| ’ | 12 | Rehydrogenation of Si Quantum Dots Superlattice using VHF plasma appatatus |
Dept. of Physical Electronics Tokyo Tech. 1, Dept.
of Electrical and Electronic Engineering Tokyo Tech. 2, QNERC Tokyo Tech.
3@*Kurokawa Yasuyoshi 1, Shigeki Tomita 2, Miyajima Shinsuke 1, Yamada Akira
3, Konagai Makoto 1 |
| 14.1 Fundamental Properties and Evaluations |
| March 29 9:15`15:45 |
| 29a-K-@/ II |
| | 1 | Resistance change of SeSbTe thin film | Kanazawa University@*Kazuya Nakayama, Masashi Takata, Toshihiko Kasai, Akio Kitagawa |
| | 2 | Photodarkening of amorphous chalcogenide induced by pulsed laser and its relaxation III | Kyoto Univ. 1@*Sakaguchi Yoshifumi 1, Kozaburo Tamura 1 |
| | 3 | Photodarkening in a-As2Se3 films:Comparison between pulsed light and continuous wave light | Gifu Univ. 1@*Mori Tomonari 1,Hosokawa Naoki 1,Shimakawa Koichi 1 |
| | 4 | Relation of photoinduced phenomena in As2S3 | Hokkaido Univ.,Dept.Appl.Phys. 1@*Asao Hideaki 1,Saitoh Akira 1,Tanaka Keiji 1 |
| | 5 | Photo-induced phenomena in GeO2-GeS2 glasses | Hokkaido Univ. 1@*Terakado Nobuaki 1, Tanaka Keiji 1 |
| | | Break 10:30`10:45 | |
| ’ | 6 | Fabrication of delafossite-type crystallized glasses and their thermoelectric properties | Tohoku Univ. 1,Nagaoka Univ. of Tech. 2@*Kayaba Noriyoshi 1,Masai Hirokazu 1, Takahashi Yoshihiro 1,Mori Hiroshi 1,Fujiwara Takumi 1,Komatsu Takayuki 2 |
| ’ | 7 | Glasses for the formation of subwavelength periodic structures by molding method | AIST 1. KONICA MINOLTA OPTO, INC. 2@*H. Kasa 1, K. Kintaka 1, J. Nishii 1, T. Mori 2 and H. Hatano 2 |
| | 8 | Formation of metal nanoparticles on thermally poled glasses | Kyoto Univ. 1, PRESTO-JST 2@*Shunsuke Murai 1, Sonoko Kawase 1, Koji Fujita 1,2, Katsuhisa Tanaka |
| | 9 | Magnetoconductive properties of magnetite (Fe3O4) thin film on SiO2 glass substrate II | Konan Univ.1,Quantum Nanotechnology Laboratory.2@*Simizu Daisuke 1. Kobori Yuuki 2. Yamaski Atusi 3. Sugimura Akira 4 |
| | | Lunch 11:45`13:00 | |
| 29p-K-@/ II |
| | 1 | Optical Properties of KNbO3-TeO2 Glass and Glass-Ceramics | Tohoku Univ., Nagaoka Univ. Tech.@*Mizuno Shintaro 1, Masai Hirokazu 1, Takahashi Yoshihiro 1, Mori Hiroshi1, Fujiwara Takumi 1, Benino Yasuhiko 2, Komotsu Takayuki 2 |
| ’ | 2 | Preparation of TiO2 nano-crystallized glass and the crystallization behavior | Tohoku Univ. 1, Nagaoka Univ. Tech. 2@Masai Hirokazu 1, Kanamori Eiji 1, Mori Hiroshi 1, Takahashi Yoshihiro 1, Fujiwara Takumi 1, Komatsu Takayuki 2 |
| | 3 | Fabrication of nanoparticles at the surface of CaO-TiO2-Bi2O3-B2O3 glass by XeCl laser irradiation | Tohoku Univ. 1, Nagaoka Univ. Tech. 2@*MASAI Hirokazu 1, KANAMORI Eiji 1, MIZUNO Shintaro 1, MORI Hiroshi 1, TAKAHASHI Yoshihiro 1, FUJIWARA Takumi 1, KOMATSU Takayuki 2 |
| | 4 | Spectroscopic properties of Bi-doped silicate glasses for ultra-broadband near-infrared gain media | Toyota Tech. Inst. 1@*Arai Yusuke 1, Suzuki Takenobu 1, Ohishi Yasutake 1 |
| | 5 | Analysis of energy transfer between Tb3+ and Yb3+ codoped in silicate glasses | Toyota Tech. Inst. 1, Toyota R&D Labs., Inc.@*Tatsuya Yamashita 1,2, Yasutake Ohishi 1 |
| | | Break 14:15`14:30 | |
| | 6 | Formation of intrinsic point defects in fluorine-doped SiO2 glass by 60Co γ-ray irradiation | JST 1, Univ. Latvia 2, TITech 3@*Koichi Kajihara 1, Masahiro Hirano 1, Linards Skuja 1 2, Hideo Hosono 1 3 |
| | 7 | Effect of Suppression of Devitrification by Chlorine-containing Silica Glass (II) | Fukui National College of Technol. 1, Univ. of Fukui 2@Horii Naohiro 1,2, Suenaga Madoka 1, Kamide Mitsuru 1, Inouye Akihiro 1, Kuzuu Nobu 2 |
| | 8 | Molecular Dynamics Study on Structure of Interface Formed by Binding Flat Silica Glass Surfaces at High Temperature IV | Univ. of Fukui 1, Univ. of Fukui 2@*Tanaka Mitsuya 1, Kuzuu Nobu 2 |
| | 9 | Temperature dependent change in Si-O-Si bond angle of porous silica films | ASRC-AIST@*Takada Syozo 1, Hata Nobuhiro 1 |
| | 10 | Microscopic model of visible photoluminescence from nanometer-sized amorphous silica particles | Kobe Univ.@*Uchino Takashi |
| 14.2 Review Lectures
and General Session: Present Status and Future Prospect on Cat-CVD
Process |
| March 29 9:30`17:15 |
| 29a-X-@/ II |
| | 1 | Present and Future of Cat-CVD Technology |
JAIST (Japan Advanced Institute of Science and
Technology)@Hideki@Matsumura |
| | 2 | Deposition of Group IV Nanocrystalline Materials by Cat-CVD | Tokyo Inst. Tech. 1, Tokyo Inst. Tech. 2@*Miyajima Shinsuke 1, Yashiki Yasutoshi 1, Yamada Akira 2, Konagai Makoto 1 |
| | 3 | Growth of III-V nitride semiconductor using Cat-CVD method | Nagaoka Univ. 1, Touhoku Univ. CIR 2, Kyusyu Inst. 3, Tohoku Univ RIEC 4, Hirosaki Univ.5@*Yasui Kanji 1, Tamura Kazuyuki 1, Fukada Yuusuke 1, Kuroki Yuichirou 1, Suemitsu Maki 2, Itou Takashi 2, Narita Yuzuru 3, Endou Tetsurou 4, Nakazawa Hideki 5, Takata Masasuke 1, Akahane Tadashi 1 |
| | | Break 11:00`11:15 | |
| | 4 | Preparation of Oxide Materials by Cat-CVD Method | Kanagawa Inst. Tech.@Ogita Yoh-Ichiro |
| | 5 | Oxidation of metal catalyzer-materials for Cat-CVD | Kanagawa Inst. of Tech. 1@Ogita Yoh-Ichiro1, Kudoh Tsugutomo1, Hattori Kazumasa1, Yamada Hirofumi1 |
| | 6 | Preparation of TiO2 thin films by hot wire CVD method | Gifu Univ. 1,@*Iida Tamio 1, Takamidou Yasuhiko 1, Kunii Takao 1, Masuda Tosirou 1,Koie Ryousuke 1,Ogawa Shunsuke 1,Yoshida Norimitu 1,Nonomura Shuichi 1 |
| | 7 | Transportation of H atoms and remote catalytic chemical vapor deposition techniques | Shizuoka Univ. 1, Japn Adv. Inst. Sci. Tech. 2@*Umemoto Hironobu 1, Setoguchi Shota 2, Uemura Hitoshi 2, Matsumura Hideki 2 |
| | | Lunch 12:30`13:30 | |
| 29p-X-@/ II |
| | 1 | Deposition of germanium films by catalytic chemical sputtering | Gifu Univ.@*Narita Tomoki 1, Naruse Kouhei 1, Ogawa Shunsuke 1, Iida Tamio 1, Mizuno Kouichi 1, Yoshida Norimitsu 1, Isomura Masao 2, Nonomura Shuichi 1 |
| | 2 | Effect of DC Substrate Vias on Deposition of Carbon Nanowalls by Hot-Wire CVD II | GIFU Univ.@Hatakeyama Yuichi, Shimabukuro Seiji, Hisanaga Masaru, Itoh Takasi, Nonomura Shuichi |
| | 3 | Influence of filament-to-substrate distance on nanocrystalline 3C-SiC prepared by HW-CVD. | Nagoya Univ. 1@Yusuke Komura 1, *Akimori Tabata 1 |
| | 4 | Growth mechanism and some properties of SiC films by plasma CVD and Cat-CVD | Depart. Appl. Phys., Science Univ. of Tokyo 1, Depart. of Mechanics and Systems, Science Univ. of Tokyo, Suwa 2@*Tsutomu Kaneko 1, Madoka Taii 1, Shunsuke Suga 1, Hideki Osada 1, Nobuaki Miyakawa 2 |
| | 5 | Fabrication of 3C-SiC/SOI structure by Hot-Mesh CVD method and for MEMS application. | Nagaoka Univ. Tech. 1, Indus. Res. Inst. Niigata Prefecture 2@*Miura Hitoshi 1, Abe Kazuki 1, Kuroki Yuichiro 1, Miyaguchi Takashi 2, Sato Takeshi 2, Yasui Kanji 1, Takata Masasuke 1, Akahane Tadashi 1 |
| | 6 | Growth of GaN on SiC/Si(111) using Hot-mesh CVD method `Effect of AlN buffer layer` | Nagaoka Univ. of Tech. 1,CIR Tohoku Univ. 2,Kyusyu Inst. Univ. 3,RIEC Tohoku Univ. 4,Hirosaki Univ. 5@*Yusuke Fukada 1,Kazuyuki Tamura 1,Yuichiro Kuroki 1,Maki Suemitsu 2,Takashi Ito 2,Yuzuru Narita 3,Tetsuro Endo 4,Hideki Nakazawa 5,Kanji Yasui 1,Tadashi Akahane 1 |
| | 7 | Gas barrier properties of SiNx-related films formed by Cat-CVD method and investigation of their large area deposition | Jpn.Adv.Inst.Sci&Tech.(JAIST)@*Ohta Yasuhiro 1,Oyaidu Takuya 1,Ohdaira Keisuke 1,Matsumura Hideki 1, |
| | | Break 15:15`15:30 | |
| ’ | 8 | Influence of flow ratio of raw materials on electric characteristic of SiCN film made by HWCVD method | Kyushu Inst. of Tech 1@*Hayashi Yuji 1, Nakamura Ikuhiro 1, Ikuta Tetsuhiro 1, Izumi Akira 1 |
| ’ | 9 | Industrialization and Standardization of Catalytic CVD: Development of gas-barrier film for flexible devices | Material Design Factory 1, Osaka City Univ. 2@*Hata Tsuyoshi 1,2, Nakayama Hiroshi 1,2 |
| | 10 | Industrialization and Standardization of Catalytic CVD: Introduction to MO-Cat-CVD | Material Design Factory 1, Osaka City Univ. 2@*Nakayama Hiroshi 1,2, Tsuyoshi Hata 1,2 |
| | 11 | Preparation of hydrogenated microcrystalline silicon thin films under inert-gas dilution by hot wire CVD technique | Tokyo Inst. of Tech. 1, QNERC 2@*Tomita Mitsuaki 1, Hiza Shuichi 1, Yamada Akira 2, Konagai Makoto 1 |
| ’ | 12 | Uniform crystallization of a-Si films by flash lamp annealing | Jpn. Adv. Inst. Sci. & Tech. 1, R&D center, Ushio Inc. 2@*Keisuke Ohdaira 1, Yohei Endo 1, Tomoko Fujiwara 1, Shogo Nishizaki 1, Takeshi Karasawa 2, Tetsuya Torikai 2, Hideki Matsumura 1 |
| | 13 | Investigation of crystallinity of depth of poly-Si thin films formed by flash lamp annealing | Jpn. Adv. Inst. Sci. & Tech. 1, R&D center, Ushio Inc. 2@Tomoko Fujiwara 1, Yohei Endo 1, Shogo Nishizaki 1, Keisuke Ohdaira 1, @Takeshi Karasawa 2, Tetsuya Torikai 2, Hideki Matsumura 1 |
| | 14 | High pressure water vapor annealing of poly-Si thin film formed by flash lamp annealing | Jpn. Adv. Inst. Sci. & Tech. 1, R&D center, Ushio Inc. 2@*Yohei Endo 1, Tomoko Fujiwara 1, Shogo Nishizaki 1, Keisuke Ohdaira 1, Takeshi Karasawa 2, Tetsuya Torikai 2, Hideki Matsumura 1 |
| 14.2 Process Technologies |
| March 30 9:00`13:15 |
| 30a-X-@/ II |
| | 1 | Microcrystalline Ge thin films prepared by the reactive RF sputtering method | Tokai Univ. 1@Sano Yukio 1, Sugita Masatoshi 1, Nakamura Isao 1, Isomura Masao 1 |
| £ | 2 | Electron-beam-induced selective deposition of thin metal films on a-Si:H films | Grad. School of Natural Sci. & Tech.,Kanazawa Univ.@Ying Li, Jun Yamashiro, Takeshi Kawae, Minoru Kumeda, Akiharu Morimoto |
| | 3 | High-quality poly-Si films formed by flash lamp annealing | Jpn. Adv. Inst. Sci. & Tech 1, R&D center, Ushio Inc. 2, IMR, Tohoku Univ. 3@*Keisuke Ohdaira 1, Yohei Endo 1, Tomoko Fujiwara 1, Shogo Nishizaki 1, Takeshi Karasawa 2, Tetsuya Torikai 2, Noritaka Usami 3, Kazuo Nakajima 3, Hideki Matsumura 1 |
| | 4 | In situ monitoring of silyl radicals and particles using cavity ringdown spectroscopy | AIST 1@*Takehiko Nagai 1, Arno H. M. Smets 1, Michio Kondo 1 |
| | 5 | Microcrystalline Silicon-Germanium Thin Films Prepared by Chemical Transport Deposition | Tokai Univ. 1@*Uesaka Yusuke 1,kawauchi Hiromi 1,Nakamura Isao 1,Isomura Masao 1 |
| | 6 | High quality improvement of microceystalline SiGe films by reactive RF sputtering method | Tokai Univ. 1@*Tomita Yuki 1, Nakamura Isao 1, Isomura Masao 1 |
| | | Break 10:30`10:45 | |
| | 7 | The preparation of niobium doped titanium dioxide thin film using electron beam evaporation. | Gifu Univ.@*Ogawa Shunsuke 1, Iida Tamio 1, Tobita Masahiro 1, Ikeda Yuusuke 1, Narita Tomoki 1, Itoh Takashi 1,Yoshida Norimitsu 1, Nonomura Shuichi 1 |
| | 8 | Free Carriar Absorption in ZnO films | Faculty of Engineering, Gifu Univ. 1@*Koichi Shimakawa 1, Yoshihiro Wakazono 1, Takashi Itoh 1 |
| | 9 | Surface chemistry of silicon film growth from SiH2Cl2 by RF plasma-enhanced CVD | Saitama Univ. 1@Matsui Hiroyuki 1,Saitou Toru 1,Li Yali 1,Shirai Hajime 1 |
| | 10 | Formation of a-Si:H thin films for Heterojunction Solar Cells by RF-Remote-PECVD | Tokyo Univ. of Agri. & Tech. 1@*Kawachi Kazuki 1, Jeon Minsung 1, Maruwan Dhamrin 1, Kamisako Koichi 1 |
| £ | 11 | Characterization of intrinsic SiC:H films deposited by VHF-PECVD for Thin Film Solar Cell Applications | Tokyo Inst. of Tech. 1, QNERC 2@Ahn Kun Ho 1, Ihsanul Afdi Yunaz 1, Kobsak Sriprapha 1, Miyajima Shinsuke1, Yamada Akira 2, Konagai Makoto 1 |
| | | Lunch 12:00`13:00 | |
| 30p-X-@/
II |
| | 1 | Rapid crystallization of silicon utilizing a thermal plasma jet |
Saitama Univ. 1,Saitama Univ. 2,RIKEN 3@*Sakurai
Yusuke 1,Yeo Min A 1,Haruta Koji 2,Kobayashi Tomohiro 3,Shirai Hajime 2 |
| |
2`7@13:15`15:00 (14.3 Devices) |
| 14.3 Devices |
| March 30 13:15`15:00 |
| 30p-X-@/ II |
| |
1@13:00`13:15 (14.2 Process Technologies) |
| £ | 2 | Fabrication of Microcrystalline Hydrogenated Silicon Oxide/Crystalline Silicon Heterojunction Solar cells | Grad. Sch. of Sci. & Eng. Tokyo Tech. 1, QNERC Tokyo Tech. 2@*Jaran Sritharathikhun 1, Chandan Banerjee 1, Akira Yamada 2 and Makoto Konagai 1 |
| ’ | 3 | Κc-Si Thin Film Solar Cells with High-deposition-rate Photovoltaic Layers | Grad. School of Eng. Science, Osaka Univ.@*Sobajima Yasushi, Nakano Shinya, Nishino Mitsutoshi, Tanaka Yorito, Toyama Toshihiko, Okamoto Hiroaki |
| | 4 | Carrier collection characteristics of microcrystalline silicon-germanium p-i-n solar cells | AIST 1, Tokai Univ. 2@Takuya Matsui 1, Keisuke Ogata 1,2, Chiawen Chang 1, Masao Isomura 2, Michio Kondo 1 |
| | | Break 14:00`14:15 | |
| | 5 | Fabrication of thin film silicon solar cells on textured plastic substrates | NIPPON GOHSEI 1,AIST 2@*Katsuma Katsuhiko 1,Hayakawa Seiichirou 1,Masuda Atsushi 2,Matsui Takuya 2,Kondo Michio 2 |
| ’ | 6 | Similarity of solar spectrum index APE | Ritsumeikan Univ.@*Nagae Shingo 1, Fukushige Shunichi 1, Ichida Kyouko 1, Minemoto Takashi 1, Takakura Hideyuki 1, Hamakawa Yoshihiro 1 |
| ’ | 7 | Environmental factor dependence on solar cell parameter of a-Si//Κc-Si photovoltaic modules | Ritsumeikan Univ. 1, Kaneka Co. 2@Ichida Kyoko 1, Fukushige Shunichi 1, Nagae Shingo 1, Gotoh Masahiro 2, Nakajima Akihiko 2, Minemoto Takashi 1, Yamamoto Kenji 2, Takakura Hideyuki 1, Hamakawa Yoshihiro 1 |