13 Science and Technology of Crystals
13.1 Bulk Crystal Growth
March 27 10:00〜17:00
27a-T-　/ I
	1	Development of DAST crystals with high laser-damage tolerance using solution stirring	Graduate School of Eng., Osaka Univ. 1, Graduate School of Science, Tokyo Univ. 2　Takahashi Yoshinori 1, Onzuka Shinji 1, Sugiyama Kazumasa 2, Brahadeeswaran Srinivasan 1, Yoshimura Masashi 1, Mori Yusuke 1, Kitaoka Yasuo 1, Sasaki Takatomo 1
△	2	Growth of NMU Single Crystals and Refractive Index of Ethanol Solution	Univ. of Yamanashi　*Yuichi Matsuda Takao Mizota Osamu Shimomura
△	3	Growth of crystals from NMU solution at low temperature	Univ. of Yamanashi　*Yuya Yabukami, Yasuhiro Harada, Takatoshi Moriyama, Takao Mizota, Osamu Shimomura
	4	Crystal Growth and Characterization of Ytterbium Garnet and Holmium Garnet by Fz Technique	NIMS 1, ISSP Univ. Tokyo 2　*Kimura Hideo 1, Tanahashi Rumi 1, Maiwa Koji 1, Sato J. Taku 2
	5	Czochralski Growth of 12CaO・7Al2O3 Crystal	Hitachi Chemical 1, Tokyo Inst. Tech. 2　Kazuhisa Kurashige 1,2, Shunsuke Ueda 1, Yoshitake Toda 2, Satoru Matstuishi 2, Katsuro Hayashi 2, Masahiro Hirano 2 Hideo Hosono 2
△	6	Czochralski growth of c-axis sapphire single crystal	Hitachi Chemical Co., Ltd　Ueda Shunsuke 1, Kurashige Kazuhisa 1
	7	Characterization of Sn doped \beta -Ga2O3 single crystal after thermal annealing	Nippon Light Metal Co. Ltd.　*Ohira Shigeo, Suzuki Norihito, Arai Naoki
△	8	Influence of Growth Atmosphere and Ir-doping on Electric Resistivity of La3Ta0.5Ga5.5O14 Single Crystal	Tohoku Univ. IMR 1　*Kimura Hiromitsu 1, Koh Shinji 1, Huang Xinming 1, Uda Satoshi 1
		Lunch 12:00〜13:00
27p-T-　/ I
	1	Investigation of the phase diagram around the Gd2Si2O7 phase in the Gd2O3-SiO2 system.	Hokkaido Univ. 1.Hitachi Chemical 2. 　*Sohan Kawamura 1.Junichi H Kaneko 1.Mikio Higuchi 1, Shusuke Nishiyama 1.Fumiyuki Fujita 1.Akira Homma 1.Jun Haruna 1.Shohei Saeki 1.Kazuhisa Kurashige 2.Hiroyuki Ishibashi 2.Michihiro Furusaka 1.
	2	Suppression of defect related luminescence for Pr doped LuAG Crystals	Univ. Tokyo 1, IMRAM Tohoku Univ. 2, Furukawa Co. Ltd. 3, Inst. Physics AS CR 4　Ogino Hiraku 1, Kei Kamada 2 3, Yoshikawa Akira 2, Nikl Martin 4, Jun-ichi Shimoyama 1, Kohji Kishio 1, Fukuda Tsuguo 2
	3	Crystal growth of LSO:Ce by melt supply double crucible method	Toshiba Ceramics Co. Ltd 1, Oxide Corp. 2　Hisashi Matsumura 1, Shinya Watanabe 1, Isao Imai 1, Osamu Nakamura 2, Takeshi Ito 2, *Akio Miyamoto 2
	4	Growth of Nd:(La1-x,Bax)F3-x Single Crystal using Micro-Pulling Down Method	IMRAM Tohoku Univ. 1,Tokuyama Corp. 2,ILE Osaka Univ. 3, School of Eng. Univ. Tokyo 4,Inst. Phys. ASCR 5 　*Fukuda Kentaro 1,2,Ishizu Sumito 2,Yoshikawa Akira 1,Simura Rayko 1,Cadatal Marilou 3,Sarukura Nobuhiko 3,Takahashi Hiroyuki 4,Suyama Toshihisa 2,Nikl Martin 5
	5	Float Zone Growth and Fluorescence Properties of Dy:REVO4 (RE=Y, Gd) Single Crystals	Hokkaido Univ. 1, RIKEN 2　*Higuchi Mikio 1, Sasaki Ryo 1, Takahashi Junichi 1, Ogawa Takayo 2, Wada Satoshi 2
	6	Crystal growth of Nd doped YVO4 by Edge-defined film-fed method	Toshiba Ceramics Co. Ltd 1, Oxide Corp. 2　Shinya Watanabe 1, Hisashi Matsumura 1, Isao Imai 1, Osamu Nakamura 2, Makoto Matsukura 2, *Akio Miyamoto 2
	7	Micro-pulling-down growth of transition metals (Ti, Mn, Co and Ni) doped MgAl2O4 single crystals for laser applications	IMRAM, Tohoku Univ. 1, LPCML, Lyon1 Univ. 2　Anis Jouini, *Rayko Simura, Akira Yoshikawa, Tsuguo Fukuda, Georges Boulon
		Break 14:45〜15:00
▲	8	Ferroelectric single crystals for UV all solid-state lasers: BaMgF4 versus BaZnF4	NIMS　*E. Garcia Víllora, Kiyoshi Shimamura, Jing Fangli, Andrey Medvedev, Shunji Takekawa, Kenji Kitamura
	9	Influence of thermal treatment on scatterers in CsLiB6O10 crystal	Gradate School of Eng., Osaka Univ.　1, Oxide Co.　2　M. Nishioka 1, K. Miyazono 1, Y. Honda 1, H. Noro 1, A. Kanoh 1, M. Habu 2,A. Miyamoto 2, ○M. Yoshimura 1, Y. Mori 1, Y. Kitaoka 1, T. Sasaki 1, Y. Furukawa 2
	10	Growth and characterization of Li2B4O7 single crystal for optical application by using CZ method.	Mitsubishi Material Corp.　*Yano Masahiro 1,Takahashi Masakuni 1,Osada Akira 1
	11	Composition-dependence of crystallization electromotive force at the growth interface of Li2B4O7	Tohoku Univ. 1, Sakai Chemical Industry 2　*Shinji Koh 1, Masahiro Nishida 2, Xinming Huang 1, Satoshi Uda 1
	12	The electric field required for the transformation of growth mode of an oxide material from incongruent to congruent	IMR, Tohoku Univ. 1　Satoshi Uda 1, Shinji Koh 1, Xinming Huang 1
	13	Analysis of crystal growth process of YBCO superconductive oxide with imposing an external electric field	IMR Tohoku Univ. 1　*Huang Xinming 1, Koh Shinji 1, Uda Satoshi 1
	14	Specific change of Li concentration of LiNbO3 fiber crystal by the imposition of an interface electric current during growth	IMR Tohoku Univ.　*Azuma Yukinaga 1, Uda Satoshi 1
	15	Growth of very thin Bi4Ge3O12 fiber crystals with 50μm in diameter by the micro-pulling-down technique	IMRAM Tohoku Univ. 1, Fukuda Crystal Laboratory 2　Valery I. Chani 1, *Hiroki Sato 1,2, Tsuguo Fukuda 1,2
13.1 Bulk Crystal Growth
March 28 10:00〜12:00
28a-T-　/ I
	1	Segregation of impurity complex of B-Ga and B-Ge during Si single crystal growth	IMR Tohoku Univ. 1　*Hoshikawa Takeshi 1,Koh Shinji 1,Huang Xinming 1,Uda Satoshi 1
	2	Numerical analysis of oxygen concentration in a CZ-Si by a global analysis	RIAM, Kyushu University 　〇K. Kakimoto and L. J. Liu
	3	Effect of crucible tilt on the melt-solid interface shape and melt flow in a unidirectional solidification process	Kyushu Univ. 1　*Liu Lijun 1, Miyazawa Hiroaki 1, Nakano Satoshi 1, Kakimoto Koichi 1
	4	Effect of melt flow and size of furnace on the melt-solid interface shape while growing multi-crystalline silicon in a casting method with multi heater system	RIAM, Kyushu Univ. 1　*Nakano Satoshi 1, Liu Lijun 1, Miyazawa Hiroaki 1, Kakimoto Koichi 1
	5	Investigation on Single Crystallization Mechanism in InGaAs Bulk Crystal by the TLZ Method	Univ.Tsukuba.Inst.Appl.Phys. 1,JapanAerospaceExplorationAgency 2　*Kaneko Masashi 1,Suemasu Takashi 1,Kinoshita Kyoichi 2,Yoda Shin-ichi 2
	6	Polycrystallization due to lattice mismatch in In0.3Ga0.7As bulk crystal growth	Tokyo Inst. Tech. 1, Japan Aerospace Exploration Agency 2, Advanced Engineering Services Co., Ltd. 3 　*Miyata Hiroaki 1,3, Adachi Satoshi 2, Ueda Toshiaki 2, Arai Yasutomo 2, Tanaka Ryota 3, Muramatsu Yuji 3, Kinoshita Kyoichi 2, Odawara Osamu 1, Shinichi Yoda 1,2
	7	Purification of　PbI2	IMRAM, Tohoku Univ. 1　Hayashi Takayuki 1,Kinpara Masanori 1,*Wang Jifeng 1,Mimura kouji 1,Isshiki Minoru 1
	8	Growth of high-purity PbI2 single crystals	IMRAM, Tohoku Univ. 1　Hayashi Takayuki 1,Kinpara Masanori 1,*Wang Jifeng 1,Mimura kouji 1,Isshiki Minoru 1
13.2 II-VI Crystals
March 28 13:00〜19:00
28p-T-　/ I
	1	Molecular beam epitaxial growth of PbSnTe/CdTe quantum wells using a (100)-oriented GaAs substrate	Nanomaterials Microdevices Res.Center,Osaka Inst.of Tech. 1　*Itakura Tomoyuki 1,Hotei Takanori 1, Koike Kazuto 1,Yano Mituaki 1
	2	Control of Initial-Stage Deposition of CdZnTe Films by Close-Spaced Sublimation Method	Kisarazu National College of Technology 1, SHIMADZU Co. 2　Imai Kiyokazu 1, Kono Makoto 1, Jibiki Takayuki 1, Okamoto Tamotsu 1, Tokuda Satoshi 2, Kishihara Hiroyuki 2, Kaino Masatomo 2
	3	The effect of Sb treatment of GaAs substrate by MOVPE	Chubu Univ. 1　*Uzura Shingo 1,Tahashi Masahiro 1,Goto Hideo 1,Ido Toshiyuki 1
	4	Characterization of Al thermal diffusion properties in ZnTe	Saga Univ. 1　*Tooru Tanaka 1, Norihiro Murata 1, Katsuhiko Saito 1, Mitsuhiro Nishio 1, Qixin Guo 1, Hiroshi Ogawa 1
	5	PL and Absorption Spectroscopies of Localized States by Oxygen Cluster in ZnTe:O	Univ. of Yamanashi　*Kazuaki Gemma, Kazumasa Aoki, Yoichi Nabetani, Tsutomu Muranaka, Takamasa Kato, Takashi Matsumoto
	6	PR Spectroscopy of ZnTe:O under Excitation by below Band Gap Energy	Univ. of Yamanashi　*Yoichi Nabetani, Kazumasa Aoki, Kazuaki Gemma, Tsutomu Muranaka, Takamasa Kato, and Takashi Matsumoto
	7	Optical and Electrical Properties of Nitrogen-Doped ZnTe:O	Univ. of Yamanashi　*Kazumasa Aoki,Takaaki Nakada,Kazuaki Gemma,Yoichi Nabetani,Tsutomu Muranaka,Takamasa Kato,Takashi Matsumoto
	8	Effect of post-annealing upon phosphorus-doped ZnTe homoepitaxial layers	Saga Univ. 1　Kouji Yamaguchi 1,Katsuhiko Saito 1,Tooru Tanaka 1,*Mitsuhiro Nishio 1,Qixin Guo 1,Hiroshi Ogawa 1
	9	Photoluminescene of MBE-ZnSeTe alloy	Hokkaido Inst. of Tech 1　*Kanamori Masahiro 1, Ichinohe Yoshihiro 1, Shigaura Gouichi 1, Imai Kazuaki 1,Sawada Takayuki 1, Suzuki Kazuhiko 1, Kimura Nobuyuki 1, Kimura Naohito 1
	10	Crystal growth and evaluation of V-doped ZnSe grown by MOVPE	Chubu Univ . 1　*Wu Zunyi 1,Tahashi Masahiro 1,Goto Hideo 1,Ido Toshiyuki 1
△	11	Lasing from Te-trapped exitons in ZnSSe:Te/ZnMgSSe DH structure laser diodes	Tottori Univ. 1　*Morikawa Gentaro 1,Ebata Tatsuro 1,Abe Tomoki 1,Kasada Hirofumi 1,Ando Koshi 1
△	12	Blue Stark-Effect Waveguide-Modulators of ZnSe/ZnMgSSe Asymmetric Coupled Quantum Wells	Tottori Univ. 1　Toshifumi Nishiguchi 1, Noritsugu Yamane 1, Hiroki Kozeni 1, Toru Yoshida 1, Tomoki Abe 1, Hirofumi Kasada 1, Koshi Ando 1
		Break 16:00〜16:15
	13	Polarization Characteristic of magnet photoluminescence from DMS/NMS DQWs	Yamanashi Univ. 1　*Ito Masahiro 1,Tajima Takamasa 1,Ohmori Kenta 1,Muranaka Tutomu 1,Nabetani Yoichi 1,Kato Takamasa 1,Matumoto Takasi 1
	14	Polarization Characteristic of Luminescence from ZnCdSe/ZnSe Quantum Wells	Yamanashi Univ. 1　*Tajima Takamasa 1,Ito Masahiro 1,Ohmori Kenta 1,Kodama Kazuki 1,Muranaka Tutomu 1,Nabetani Yoichi 1,Matumoto Takasi 1
	15	Destruction and Recrystallization Processes of MgO Protecting Layer in Plasma Display by Sputtering	Tohoku Univ. 1, JST-PRESTO 2, Hiroshima Univ. 3, Tohoku Univ. 4　Kubo Momoji 1,2, Kikuchi Hiromi 1, Tsuboi Hideyuki 1, Koyama Michihisa 1, Hatakeyama Nozomu 1, Endou Akira 1, Takaba Hiromitsu 1, Del Carpio Carlos 1, Kajiyama Hiroshi 3, Shinoda Tsutae 3, Miyamoto Akira 4,1
	16	Lasing emission from multipod ZnO nanostructures	CIR,1 MIR,2 Department of applied physics3 in Tohoku Univ.　*Sang Hyun Lee1, Takenari Goto1, Miyazaki hiroshi3, Meoung-Whan Cho1,2, Takafumi Yao, 1,2,
▲	17	Selective growth of ZnO nanowires on ZnO crystal	ICORP,JST 1, NIMS 2　wang yuguang 1, Makoto Sakurai 2, Masakazu Aono 2
▲	18	Vertical single-crystal ZnO nanotubes grown on γ-LiAlO2(100) substrate	Shizuoka Univ., R.I.E. 1, NTT BRL 2, NIMS 3　*Zhang Guoqiang 2, Adachi Masahiko 1, Ganjil Sandip 1, Okamatsu Koda 1, Nakamura Atsushi 1, Temmyo Jiro 1, Matsui Yoshio 3
	19	Electroluminescence ofZnO/ZnTe Heterojunction	Akita Prefectural Univ.1,Hitachi Cable,Ltd.2　*Kato Ayano 1,Yamada Minoru 1,Komiyama Takao 1,Yamaguchi Hiroyuki 1,Otoki Y 2,Aoyama Takashi 1
	20	Degradation of band-edge emission during Cathodoluminescence observation	Natl. Inst. Materials Science　Sekiguchi Takashi, Dierre Benjamin, Yuan Xiaoli
▲	21	Plasma assisted molecular beam epitaxy of ZnO on c-sapphire with Cr-oxides and Cr-nitrides buffer	Tohoku Univ. IMR1, Korea Chungnam Univ.2, KAIST 3, Korea Maritime Univ. 4, Tohoku Univ. CIR5　*Jinsub Park 1. Tsutomu Minegishi1. Seunghwan Park 1. Inho Im 1. Takashi Hanada1. Soonku Hong 2. Jaewook Lee 3. Jeongyoung Lee 3. Jiho Chang 4.Meoungwhan Cho 1.5 Takafumi Yao1.5
	22	Investigation on growth temperature of ZnO/Al2O3 by MBE method	Okayama Univ. of Science 1, Miyazaki Univ. 2　*Yuichi Sato 1, Minoru Yoneta 1, Masakazu Ii 1, Kenji Yoshino 2, Masakazu Ohishi 1, Hiroshi Saito 1
	23	Fabrication of ZnO based light-emitting devices using a spin coating technique	Kogakuin Univ.　*Kaori Yoshioka 1,Shinichi Egawa 1,Toshiaki Kobayashi 1,Kouichi Sugimoto 1,Hirohisa Nomura 2,Mitsunobu Sato 2 and Tohru Honda 1
13.3 III-V Epitaxial Growth
March 28 13:00〜18:30
28p-Q-　/ I
	1	High-Resolution and Multi-Angle Observation of Single InAs Quantum Dot by Using FIB-TEM	Grad. School of Sci. & Tech., Kobe Univ. 1, Fac. of Eng., Kobe Univ. 2, Hitachi High-Technologies 3　Inoue Tomoya 1, Kita Takashi 1,2, Wada Osamu 1,2, Konno Mitsuru 3, Yaguchi Toshie 3, Kamino Takeo 3
	2	Crystallization process of In nano-dots to InAs in the Nano-Jet Probe method	AIST 1, NEC Corp. 2, Univ. of Tsukuba 3 　*Ohkouchi Shunsuke 1,2, Sugimoto Yoshimasa 1,3, Ozaki Nobuhiko 3, Ishikawa Hiroshi 1, Asakawa Kiyoshi 3
	3	Self-formation control of low-density InAs quantum-dots by punctuated supply method	Univ.of Electro comm. 1　Patchakapat Polachet 1,Yamaguchi Koichi 1
	4	Selective area growth of InAs quantum-dots by metal-mask (MM) method (II) -The reduction of the step height-	U. Tsukuba 1, NEC 2, AIST 3, NIMS 4　*Y. Takata 1, N. Ozaki 1, S. Ohkouchi 2,3, Y. Sugimoto 1,4, N. Ikeda 1,3, Y. Kitagawa 1, Y. Watanabe 1, A. Mizutani 1, and K. Asakawa 1
	5	The initial growth stage of GaAs nanowires by selective-area MOVPE	Hokkaido Univ. 1　*Keitaro Ikejiri 1,Jinichiro Noborisaka 1,Shinjiroh Hara 1,Junichi Motohisa 1,Takashi Fukui 1
△	6	Fabrication of Ferromagnetic MnAs Nanostructures by Selective Area MOVPE on GaAs(111)B Substrate	Hokkaido univ. Graduate School of IST 1, RCIQE 2　*Kawamura Daichi 1, Hara Shinjiro 2, Motohisa Junichi 2, Fukui Takashi 2
△	7	InAs QDs MBE selective growth into nano pits naturally formed on GaAs (001) substrate	Univ.Tokyo,NCRC 1, NIT 2　*Isomura Nobuhiro 1,2, Tsukamoto Shirou 1, Nagahara Seiji 1, iizuka kanji 2, Arakawa Yasuhiko 1
	8	Growth interruption temperature dependence of Double-capped InAs Quantum Dots by Selective MOVPE Growth	Sophia Univ 1, Furukawa Electric Co.,Ltd. 2　　*Saito Yasuhito 1, Okawa Tatsuya 1, Yoshida Junji 2, Shimomura Kazuhiko 1
	9	Controlling emission wavelength of InAs quantum dots by selective MOVPE growth using composition change of GaInAs layer	Sophia Univ. 1,Furukawa Electric Co., Ltd. 2　*Akaishi Masataka 1,Okawa Tatsuya 1,Yamauchi Yusuke 1,Yoshida Junji 2,Shimomura Kazuhiko 1
	10	Self-assembly of GaAs/AlGaAs quantum dots on GaAs(311)A substrates by droplet epitaxy	NIMS 1　*Mano Takaaki 1, Kuroda Takashi 1, Mitsuishi Kazutaka 1, Sakoda Kazuaki 1, Koguchi Nobuyuki 1
△	11	Light emission properties of high-density InAs quantum-dots grown on Sb-terminated GaAs layers	Univ. of Electro-Comm. 1 　*Ohta Masahiko 1, Yamaguchi Koichi 1
		Break 15:45〜16:00
	12	Real time observation of self-assemble InAs/GaAs quantum dot growth	The Grad. School of Sci.& Tech. 1, Fac. of Eng. 2, Kobe Univ.　*Kudo Takuya 1, Inoue Tomoya 1, Kita Takashi 1,2, Wada Osamu 1,2
	13	Suppressed bimodal emission of InAs quantum dots grown under an As2 source in MBE	AIST　*Sugaya Takeyoshi 1, Amano Takeru 1, Komori Kazuhiro 1
	14	Suppression of size fluctuation of InAs quantum dots during InGaAs embedding growth	Univ.of Electro comm. 1　Tonomura Shinichi 1,Yamaguchi Koichi 1
△	15	Effects of AlAs Coating for InAs Quantum Dots IV	N.I.T.　*Yokota Hiroshi 1, Okamoto Hiroshi 1, Iizuka Kanji 1
	16	Surface passivatin effect of electron beam resist on InAs Quantum dots and their improved luminescence efficiency	Hokkaido Univ. 1, Muroran Inst. of Tech. 2　*Yasuhiro Idutsu 1,Michiaki Endo 1,Katsuhiro Uesugi 2,Ikuo Suemune 1
	17	Introduction of GaAsSb embedding layer into stacking growth of high-density InAs quantum dots	Electro-Communications Univ.　Yoshida Takayuki. Kakuda Naoki. Yamaguchi Koichi
	18	Emission Wavelength Control of Nitrided InAs QDs by Introducing Spacer-Layer	Grad. School of Sci. & Tech., Kobe Univ. 1, Fac. of Eng., Kobe Univ. 2 　*Inoue Tomoya 1, Mizuno Hiroshi 1, Kita Takashi 1,2, Wada Osamu 1,2
	19	Effect on the suppression of spacer layer thickness of InAs quantum dots using GaNAs strain compensation layer	Tokyo Inst. Tech. 1　Ryoichiro Suzuki 1,Tomoyuki Miyamoto 1,Fumio Koyama 1
	20	MOVPE Growth of InAsN self-assembled quantum dots on GaAs (001) substrates (II)	The Univ. of Tokyo 1, Chulalongkorn Univ. 2　*Kuboya Shigeyuki 1, Takahashi Shun 1, Thieu Quang Tu 1, Nakajima Fumihiro, Sakuntum Sanorpim 2, Katayama Ryuji 1, Onabe Kentaro 1
	21	Photoluminescence characteristics of self-assembled GaInNAs quantum dots	Univ. of Tsukuba, Inst. of Appl. Phys. 1　*Nakamura Yuta 1, Oshima Ryuji 1, Hashimoto Takayuki 1, Shigekawa Hidemi 1, Okada Yoshitaka 1
13.3 III-V Epitaxial Growth
March 29 9:00〜18:30
29a-Q-　/ I
	1	The optical properties in InAsP quantum dots fabricated by the droplet heteroepitaxy -The effect of gas flow sequence-	Nagoya Univ. 1　Miyake Shinsuke, Kawamura Shinichi, *Fuchi Shingo, Ujihara Toru, Takeda Yoshikazu
△	2	Effects of composition and strain of buffer layers on the formation of InAs nanostructures on InP(001) substrate	Fujitsu Labs Ltd. 1, Fujitsu Ltd. 2, QD laser inc. 3　Okumura Shigekazu 1, Kawaguchi Kenichi 1,2, Ekawa Mitsuru 1,2, Kuwatsuka Haruhiko 1,2, Sugawara Mitsuru 1,2,3
	3	Theoretical analysis of optical polarization in InAs/GaAs columnar quantum dots (2)	NCRC Univ. Tokyo 1, CINQIE Univ. Tokyo 2, NTT Photonics Laboratories 3, Fujitsu Laboratories Ltd. 4, QD Laser Inc. 5 　*Saito Toshio 1,2, Kakitsuka Takaaki 3, Ebe Hiroji 1, Sugawara Mitsuru 4,5, Arakawa Yasuhiko 1,2
	4	Controlling Polarization of Columnar InAs Quantum Dots on InP(001) with Highly Tensile-Strained Barriers	Fujitsu 1, OITDA 2, NCRC, Univ. of Tokyo 3, QD Laser 4, IIS, Univ. of Tokyo 5, RCAST, Univ. of Tokyo 6　*Kawaguchi Kenichi 1,2, Yasuoka Nami 1,2, Ekawa Mitsuru 1,2, Ebe Hiroji 3,5, Akiyama Tomoyuki 4, Sugawara Mitsuru 1,2,4, Arakawa Yasuhiko 3,5,6
	5	Cross-sectional STM observation of interfacial structures and compositional distributions in InP-on-InGaAs interface: InP layer thickness dependence II	Nagoya Univ.　*Kano Yasuaki 1, Yamakawa Ichirou 1, Lee WoSikku 1, Fuchi Shingo 1, Ujihara Toru 1, Takeda Yoshikazu 1, Nakamura Arao 1
	6	Diffusion of As and Ga from 1ML into InP measured by X-ray CTR scattering method	Graduate School of Engineering 1,Department of Engineering 2,VBL, Nagoya Univ. 3　Yusuke Ohtake 1,*Akiko Mori 2,Masao Tabuchi 3,Yoshikazu Takeda 1
		Break 10:30〜10:45
	7	Annealing effect on InAsSbN infrared QW laser diodes grown on InP substrates(II)	Osaka Prefecture Univ. 1, CREST-JST 2　Kawamura Yuichi 1,2, Inoue Naohisa 1
△	8	Crystal growth of InSb thin films with InAsSb buffer layer by MOVPE	Depart. of EEIE 1 and HRC 2, Kanagawa Univ.　*Matsumoto Masashi 1, Yamazaki jun 1, Yamaguchi shigeo 1,2
	9	Electrical properties of InAsSb sandwiched between AlInSb layers grown by MBE	Asahikasei EMD Corporation 1,Asahikasei Corporation 2　*Geka Hirotaka 1,Shibasaki Ichiro 2
	10	In-Plane Negative Magnetoresistance due to Boundary Scattering in AlInSb/InSb Quantum Wells	Osaka Inst. of Tech. NMRC 1, Tokyo Univ. of Science, Yamaguchi 2, Asahi Chemical Industry Co. Ltd. 3　*Fujimoto Akira 1, Ishida Shuichi 2, Manago Takashi 2, Geka Hirotaka 3, Okamoto Atsushi 3, Shibasaki Ichiro 3
	11	Miniaturized InSb PIN Photodiode Based Infrared Sensor for Room Temperature Operation	Asahi Kasei EMD Corporation 1　*Tomohiro Morishita 1,Camargo Edson 1,Koichiro Ueno 1,Aya Yokoyama 1,Masayuki Sato 1,Hidetoshi Endo 1,Yoshinori Yanagita 1,Masaaki Kurihara 1,Kazutoshi Ishibashi 1,Naohiro Kuze 1
		Lunch 12:00〜13:00
29p-Q-　/ I
	1	MOVPE-grown InAs/InGaAs multiple-quantum-well lasers on InP substrates.	NTT Photonics Lab. 1,　*Sato Tomonari 1, Mitsuhara Manabu 1, Kakitsuka Takaaki 1, Kondo Yasuhiro 1
	2	GaAsBi/GaAs Multiple Quantum Well Structures Grown by MBE	Kyoto Institute of Technology　Yusuke Kinoshita 1,Yoriko Tominaga 1, Gan Feng 1, Kunishige Oe 1, Masahiro Yoshimoto 1
▲	3	Bi- and N-dependent annealing effect on GaNAsBi photoluminescence	Kyoto Inst. Tech.　*Gan Feng 1,Kunishige Oe 1,Masahiro Yoshimoto 1
	4	Reflectance spectrum measurements on TlGaAs thin films	Shimane Univ.　*Ohnishi Kazuyoshi 1, Shiba Masaki 1, Yamakage Musa 1, Kajikawa Yasutomo 1
	5	Growth of TlGaInNAs/TlInP on InP substrate	Osaka Univ. ISIR 1　Ozasa Motoki 1, Fujiwara Atsushi 1, Araki Keisuke 1, Daivasigamani KRISHNAMURTHY 1, Hasegawa Shigehiko 1, *Asahi Hajime 1
▲	6	Dependence of Tl incorporation on N composition in quinary TlGaInNAs/GaAs quantum well structures	Osaka Univ. ISIR 1　Daivasigamani KRISHNAMURTHY 1, Fujiwara Atsushi 1,Ozasa Motoki 1, Araki Keisuke 1, Hasegawa Shigehiko 1, *Asahi Hajime 1
	7	MEE growth of GaPN alloys on GaP (001) substrates	Toyohashi Univ. Tech. 1, Tsuyama National Coll. Tech. 2　*Umeno Kazuyuki 1, Noma Ryosuke 1, Furukawa Yuzo 1, Yonezu Hiroo 1, Wakahara Akihiro 1, Ito Kunio 2
	8	Luminescence property of GaPN grown by Organometallic vapor phase epitaxy	Toyohashi Univ. of Tech1.　*Hatakenaka Susumu1,Nakanishi Yoshiyuki1,Wakahara Akihiro1,Okada Hiroshi1,Furukawa Yuzo1,Yonezu Hiroo1
	9	Electrical property of undoped GaPN grown by organometallic vapor phase epitaxy	Toyohashi Univ. of Tech.1　*Hatakenaka Susumu1,Nakanishi Yoshiyuki1,Wakahara Akihiro1,Okada Hiroshi1,Furukawa Yuzo1,Yonezu Hiroo1
	10	Characterization of GaP(N)/Si heterojunctions by internal photoemission	AIST 1　Sakata Isao 1,Kawanami Hitoshi 1
		Break 15:30〜15:45
	11	surface reactions of N sources in GaAsN crystal growth by using chemical beam epitaxy	Toyota Technological Inst.　Suzuki Hidetoshi 1, Nishimura Kenichi 1, Imai Takahiro 1, Saito Kenji 1, Kojima Nobuaki 1, Ohshita Yoshio 1, Yamaguchi Masafumi 1
	12	Impurities reduction in GaAsN thin films by the flow rate modulated chemical beam epitaxy	Toyota Technological Inst.　*Saito Kenji 1, Nishimura Kenichi 1, Suzuki Hidetoshi 1, Kojima Nobuaki 1, Ohshita Yoshio 1, Yamaguchi Masafumi 1
	13	The influence of residual impurities on electrical property of GaAsN thin films grown by CBE III	Toyota Tech. Inst.　Kenichi Nishimura 1, Takahiro Imai 1, Hidetoshi Suzuki 1, Yoshio Ohshita 1, Masafumi Yamaguchi 1
	14	Photoluminescence from single isoelectronic traps in nitrogen delta-doped GaAs	Saitama Univ. 1,ISSP 2,The Univ. of Tokyo 3　*Endo Yuta 1,Hijikata Yasuto 1,Yaguchi Hiroyuki 1,Yoshida Sadahumi 1,Yoshita Masahiro 2,Akiyama Hidehumi 2,Nakajima Humihiro 3,Katayama Ryuji 3,Onabe Kentaro 3
	15	Micro Raman spectroscopy of GaAsN films grown by MOVPE	The Univ. of Tokyo 1, Chulalongkorn Univ. 2　Nakajima Fumihiro 1, Sakuntam Sanorpim 2, Kuboya Sigeyuki 1, Katayama Ryuji 1, Onabe Kentaro 1
	16	Fabrication and evaluation of GaNAs/GaAs MQW by RF-MBE method	Kagawa Univ. 1, ISSP 2　Yuichi Iwata 1, Kensuke Fujii 1, Hideki Hari 1, Masayoshi Kakino 1, Tsuneaki Kumamoto 1, Daisuke Nakase 1, Keita Hori 1, Noriaki Tsurumathi 1, Hiroshi Itoh 1, Shunsuke Nakanishi 1, Hidefumi Akiyama 2, Shyun Koshiba 1
	17	Optimization of MBE growth conditions for thick InGaAsN layers lattice-matched to InP substrates	Sumitomo Electric Industries, Ltd. 1, Osaka Prefecture Univ. 2, CREST 3　Miura Kouhei 1, Nagai Youichi 1, Iguchi Yasuhiro 1, Tsubokura Mitsutaka 1, Okada Hiroshi 1, Kawamura Yuichi 2, 3
	18	Selective growth of GaInNAs multi quantum wells by MOVPE	Sumitomo Electric Industries 1, OITDA 2　*Ishizuka Takashi 1,2, Koyama Kenji 1,2, Katsuyama Tsukuru 1,2
	19	Investigation on the effect of irradiation of atomic hydrogen during growth of Ga(In)NAs	Univ. of Tsukuba, Inst. of Applied Phisics 1　*Naoya Miyashita 1, Yukiko Shimizu 1, Akira Uedono 1, Yoshitaka Okada 1
	20	Exciton Binding Energy of GaInNAs/GaAs Quantum Well	Graduate School of Eng. Osaka Univ. 1, Faculty of Eng. Univ. of Miyazaki 2　Uchiyama Masayuki 1, Shu Dong Wu 1, Kondow Masahiko 1, Fukushima Shinichi 2, Fukuyama Atsuhiko 2, Ikari Tetsuo 2
	21	Near-field Imaging Spectroscopy of Localized Electronic States in GaInNAs Quantum Wells	Keio Univ. 1,KAST 2,Kyoto Univ. 3,Sumitomo Electric Industries 4　*Kubota Ryosuke 1,Nakashima Kohji 1,Saiki Toshiharu 1,2,Sakai Masaru 2,Matsuda Kazunari 2,3,Ishizuka Takashi 4
13.3 III-V Epitaxial Growth
March 30 9:00〜15:00
30a-Q-　/ I
△	1	Kinetic analyses on the sub-surface in GaAs-MOVPE by in situ RAS	Univ. of Tokyo 1, RCAST 2, JST-SORST 3　* Deura Momoko 1-3, Sugiyama Masakazu 1,3, Nakano Takayuki 1,3, Shimogaki Yukihiro 1,3, Nakano Yoshiaki 2,3
△	2	Prediction of group V composition in the reactor-scale MOVPE simulation of InGaAsP	Univ. of Tokyo 1, RCAST Univ. of Tokyo 2, JST-SORST 3　*Ryusuke Onitsuka 1,3, Momoko Deura 1,3, Tomonari Shioda 1,3, Masakazu Sugiyama 1,3, Yukihiro Shimogaki 1,3, Yoshiaki Nakano 1-3
	3	Polar diagram of the GaAs growth rate in Migration-Enhanced Epitaxy using As2 flux	Waseda Univ. 1　*Kodama Satoshi 1,Yoshiba Ippei 1,Komatsuzaki Yuji 1,Horikoshi Yoshiji 1
▲	4	Surface reaction kinetics of MOVPE for InP and InAs by selective area growth technique	The Univ. of Tokyo 1, RCAST, The Univ. of Tokyo 2, JST-SORST 3　*Yunpeng Wang 1,3, Haizheng Song 1,3, Masakazu Sugiyama 1,3, Yoshiaki Nakano 2,3, Yukihiro Shimogaki 1,3
△	5	Optimization of mask shapes for the integration of active/passive components by selective-area MOVPE of InGaAsP	Univ. of Tokyo 1, RCAST Univ. of Tokyo 2, JST-SORST 3　*Tomonari Shioda 1-3, Masakazu Sugiyama 1,3, Yoshiaki Nakano 1-3
▲	6	Effects of doping on kinetics of GaAs selective area MOVPE	School of Eng., The Univ. of Tokyo 1, RCAST, The Univ. of Tokyo 2, JST-SORST 3　*Haizheng Song 1,2,3, Yunpeng Wang 1,3, Masakazu Sugiyama 1,3, Yoshiaki Nakano 2,3, Yukihiro Shimogaki 1,3
		Break 10:30〜10:45
	7	Low-temperature MBE growth of InAs on glass and plastic film substrates	Shimane Univ.　*Takushima Masanao 1,Kuya Yu 1,Kazuyoshi Ohnishi 1,Yasutomo Kajikawa 1
▲	8	A comparison between InAs layers obtained by direct and graded-buffer growth on GaAs(001)	JAIST　*Jeong Yonkil 1, Choi Hyonkwang 1, Suzuki Toshi-kazu 1
	9	1.3 µm band InGaAs MQWs on metamorphic graded buffer layer on GaAs substrate	NTT Photonics Lab. 1　Masakazu Arai 1, Yasuhiro Kondo 1
	10	Mosaicity of GaAs/GaAsP layers grown on GaAs substrate (2)	Daido Inst. Tech 1,Daido Steel 2,Osaka Pref. Univ. 3　*Saka Takashi 1,Iseki Maki 1,Kato Toshihiro 2,Horinaka Hiromichi 3,Matsuyama Tetsuya 3
	11	Mosaicity of GaAs/GaAsP layers grown on GaAs substrate (3)	Daido Inst. Tech. 1,Daido Steel 2, Osaka Pref. Univ. 3　*Saka Takashi 1,Iseki Maki 1,Kato Toshihiro 2,Horinaka Hiromichi 3,Matsuyama Tetsuya 3
		Lunch 12:00〜13:00
30p-Q-　/ I
	1	Formation and Growth Condition Dependences of MnAs/GaInAs Hetero-Structures Grown by MOVPE	RCIQE and Hokkaido Univ. 1　*Iguchi Hiroko 1, Hara Shinjiroh 1, Motohisa Junichi 1, Fukui Takashi 1
	2	Initial growth of GaP layers on Si substrates by MOVPE	Shizuoka Univ. 1　*Watanabe Satoru 1, Morizumi Kenta 1, Fuke Shunro 1, Takano Yasushi 1
	3	In situ observation of the initial stage of buffer layer growth for III/V compound semiconductor films on Si	Univ. of Tokyo 1, Tokyo Inst. Tech 2　*Deura Momoko 1,2, Sugiyama Masakazu 1, Hoshii Takuya 3, Sugahara Satoshi 4, Takagi Shinichi 1,3, Nakano Yoshiaki 2
△	4	Effectiveness of InP Buffer for Epitaxial Growth of InGaAs on Si	The Univ. of Tokyo 1, Tokyo Inst. Tech. 2　*Hoshii Takuya 1, Deura Momoko 1, Shichijo Masato 1, Sugiyama Masakazu 1, Sugahara Satoshi 2, Nakano Yoshiaki 1, Takagi Shin-ichi 1
△	5	Fabrication of AlGaSb/AlSb-distributed Bragg reflectors on Si(001) substrate for vertical emitting optical devices	Natl. Inst. of Info. & Com. Tech. 1　*Akahane Kouichi 1, Yamamoto Naokatsu 1, Gozu Shin-ichiro 1, Ueta Akio 1, Tsuchiya Masahiro 1
	6	Characterization of GaSb/AlGaSb MQW grown on Si substrates	Nagaoka Univ. Tech.　Tomonori Sasaki, Akio Sato, *Hideyuki Toyota, Yoshio Jinbo, Naotaka Uchitomi
	7	Electroabsortive Characterization of InGaAs/InAlAs Five-layer Asymmetric Coupled Quantum Wells for 1.55mm Wavelength (II)	Yokohama Nat’l Univ　Koichiro Yamaguchi 1
	8	Growth of AlAs/GaAs quantum well structures undergoing a metal-insulator transition	Japan Advanced Institute of Science and Technology 1　*NOH Jungpil 1, Otsuka Nobuo 1,
13.4 III-V Nitride Epitaxial Growth
March 27 9:00〜12:30
27a-Y-　/ I
	1	Characterization of inductively coupled plasma etched surfaces of p-GaN by the photocapacitance method	Nagoya Inst. Tech. 1, Toyota Central R&D Lab. Inc. 2　Kazuki Mikamo 1, *Masashi Kato 1, Masaya Ichimura 1, Masakazu Kanechika 2, Osamu Ishiguro 2, Tetsu Kachi 2
	2	DLTS study of pn-GaN on GaN substrate	Aichi Institute of Technorogy 1,Toyota Central R&D Labs. 2 　*Tokuda Yutaka 1,Matsuoka Yoichi 1,Seo Takeshi 1,Ueda Hiroyuki 2,Soejima Narumasa2,Ishiguro Osamu 2,Kachi Tetsu 2
	3	Evaluation of deep levels in GaN grown by RF-MBE on GaN template by capacitance DLTS	Nagoya Univ. 1, Inst. Advanced Research Nagoya Univ. 2　Yagishita Yohei 1,Mitsunaga Tomoaki 1,Osaka Jiro 1,Mizutani Takashi 1,2
	4	Depth profiles of deep levels in GaN on SiC substrates investigated by capacitance DLTS	R&D Association for Future Electron Devices 1, Ritsumeikan Univ. 2　*Kurouchi Masahito 1, Kikawa Junjiroh 1, Tsuchiya Tadayoshi 1, Kamiya Shinichi 1, Yamada Tomoyuki 1, Hinoki Akihiro 2, Kosaka Kenichi 2, Araki Tsutomu 2, Suzuki Akira 1,2, Nanishi Yasushi 2
	5	Anomalous C-V Characteristics of the GaN pn junction with highly doped Mg Acceptors	Tokyo University of Technology 1, Nichia Corp. 2　Yasuhito Zohta 1, *Akihiro Yokoyama 1, Tomotsugu Mitani 2, Takashi Mukai 2
	6	Effects of pre-treatment on electrical properties of semi-insulating GaN at room temperature	Tokyo Metropolitan Univ. 1　*Baba Koichi 1,Nakamura Seiji 1,Suhara Michihiko 1,Okumura tsugunori
		Break 10:30〜10:45
	7	Characterizations of electrical property and gate-leakage of AlGaN/GaN HEMT grown on vicinal sapphire (0001) substrates	AIST　* Shen Xu-Qiang1, Sazawa Hiroyuki1, Okumura Hajime1
△	8	Analysis of ITO/p-GaN interfaces by synchrotron radiation hard X-ray photoemission spectroscopy and their electrical characteristics	School of Engineering, The Univ. of Tokyo 1, IIS, The Univ. of Tokyo 2, Showa Denko KK 3, NIMS 4, JST-CREST 5　*Toyoshima Yasushi 1, Horiba Koji 1,5, Ohta Jitsuo 2, Fujioka Hiroshi 2, Oshima Masaharu 1,5, Miki Hisayuki 3, Kobayashi Keisuke 4
	9	Magnetic Properties of GaCrN/AlN Multi Quantum Well Structures	ISIR Osaka Univ.　Yamauchi Yoshiaki 1, Hiromura Yuki 1, Kimura Shigeya 1, Hasegawa Shigehiko 1, *Asahi Hajime 1
	10	AlGaN growth simulation in MOVPE method	Tokyo Univ.of Science 1, JST ERATO 2　*Ichikawa Masaya 1,Uchida Takeshi 1,Ohkawa Kazuhiro 1 2
	11	Rate equation modeling of GaN growth by NH3-MBE	Waseda Univ.　* Yoshizaki Tadashi 1, Hiratsuka Takato 1, Kawaharazuka Atsushi 2, Horikoshi Yoshiji 1
	12	Development of a Reaction Model of GaN Growth by Using MO Calculation and Thermo-Fluid Analysis of GaN-MOVPE	Hitachi,Ltd 1,Hitachi Cable,Ltd 2　*Tokoi Hirooki 1,Ootake Atsushi 1,Tago Kazutami1,Watanabe Kazutoshi 2,Mishima tomoyoshi 2
	13	First-principles study of composition ratio dependency of elasticity of InGaN	Tokyo Univ. of Sci. 1　*Kiichiro Mukose 1
13.4 III-V Nitride Epitaxial Growth
March 27 9:00〜17:30
27a-ZM-　/ I
	1	Polarity and Impurity Incorporation of AlN Thin Films Grown by Pulse-Injection Method	The Univ. of Tokyo 1, RCAST, The Univ. of Tokyo 2, JST-SORST 3　*Jung-Seung Yang 1,3, Hassanet Sodabanlu 2, Ichitaro Waki 1, Masakazu Sugiyama 1,3, Yoshiaki Nakano 2,3, Yukihiro Shimogaki 1,3
	2	Control of polarity and improvement of quality of AlN/AlGaN template on sapphire by using TMAl pulse supply	RIKEN 1,Saitama Univ. 2　*Noguchi Norimichi 12,Ohashi Tomoaki 12,Hirayama Hideki 1,Kamata Norihiko 2
	3	Rapid high-efficiency deep ultra violet emission from AlGaN quantum well by high quality AlN buffer	RIKEN 1,Saitama Univ. 2　*Toru Yatabe 1,2,Tomoaki Ohashi 1,2,Hideki Hirayama 1,Norimichi Noguchi 1,2,Norihiko Kamata 2
	4	Realization of high quality AlN buffer layer by alternative NH3 gas supply for the application to deep-UV LEDs	RIKEN 1, Saitama Univ. 2　Ohashi Tomoaki 1,2, Hirayama Hideki 1, Yatabe Toru 1,2, Kamata Norihiko 2
	5	Polarity dependence of AlN {0001} decomposition at high temperatures in flowing H2	Tokyo Univ. of Agri. & Tech. 1,RIKEN 2,Tokuyama Co. 3　Akiyama Kazuhiro 1,Kumagai Yoshinao 1,Takeuchi Misaichi 2,Murakami Hisashi 1,Togashi Rie 1,Kinoshita Toru 3, Takada Kazuya 3,Aoyagi Yoshinobu 2, Koukitu Akinori 1
	6	Boron nitride thin films on graphitized 6H-SiC substrates grown by metalorganic vapor phase epitaxy	NTT BRL 1, Shonan Institute of Technology 2　*Kobayashi Yasuyuki 1, Hibino Hiroki 1, Nakamura Tomohiro 2, Akasaka Tetsuya 1, Makimoto Toshiki 1, Matsumoto Nobuo 2
		Break 10:30〜10:45
	7	Effect of Internal Stress on Behavior of Threading Dislocations in AlGaN/AlN	Kyushu Univ. 1, Kyushu Univ. 2, Mie Univ. 3, NGK 4　Yokote Tatsunori1, *Kuwano Noriyuki2, Miyake Hideto3, Hiramatsu Kazumasa3, Shibata Tomohiko4
△	8	TEM analysis of High temperature MOVPE grown AlN and AlxGa1-xN layers 6H-SiC substrates	21st Century COE Nano-Factory, Meijo University1, Corporate R&D Center, Showa-Denko K.K2　Sugimura Hiroki 1, Krishnan Balakrishnan1, Nagai Tetsuya 1, Imura Masataka 1, Bandoh Akira 2, Iwaya Motoaki1, Kamiyama Satoshi 1, Amano Hiroshi 1 and Akasaki Isamu 1
	9	Growth of AlN on 3C-SiC/Si templates by halide vapor phase epitaxy	Tokyo Univ. of Agri. & Tech. 1, Toshiba Ceramics Co. Ltd. 2　*Ken-ichi Eriguchi 1, Takayoshi Yamane 1, Hisashi Murakami 1, Yoshinao Kumagai 1, Jun Komiyama 2, Akinori Koukitu 1
	10	High-temperature growth of AlN on high quality AlN/sapphire by low- pressure HVPE	Mie Univ. 1,NGK 2　*Kishino Shinya 1,Tsujisawa Kenichi 1,Miyake Hideto 1,Hiramatsu Kazumasa 1,Shibata Tomohiko 2,Sumiya Shigeaki 2,Tanaka Mitsuhiro 2
	11	Simulation of AlN deposition from AlCl3 - NH3 mixtures in a hat wall CVD reactor	Dep. of Functional Materials Science, Saitama Univ.　*Fukuhara Yoshiki, Sakai Masamichi, Honma Shunji
		Lunch 12:00〜13:00
27p-ZM-　/ I
	1	HVPE growth of a thick GaN on a (111)Si substrate	Nagoya Univ. 1　*Uchida Tomoyuki 1,Honda Yoshio 1,Yamaguchi Masahito 1,Sawaki Nobuhiko 1
	2	HVPE growth of GaN thick layers using CrN buffers	CIR Tohoku Univ. 1, IMR Tohoku Univ. 2, Chungnam National Univ. 3　○Hiroki Goto1, Seogwoo Lee1, Hyongjae Lee1, Hyojong Lee1, Junseok Ha1, SoonKu Hong3, Meoungwhan Cho2, and Takafumi Yao1,2
	3	Voided-buffer assisted self-separation of GaN thick films	1  Center for Interdisciplinary Research, Tohoku University. 2  Institute for Materials Research, Tohoku University.　*Hyun-Jae Lee1, S. W. Lee1, H. Goto1, Hyo-Jong Lee1. J. S. Ha1, T. Goto1. M. W. Cho2 and T. Yao1, 2
△	4	Fabrication of 3-inch GaN Substrates by Hydride Vapor Phase Epitaxy Using Void-Assisted Separation Method	Hitachi Cable, Ltd. 1　*Takehiro Yoshida 1, Oshima Yuichi 1, Eri Takeshi 1, Ikeda Ken 1, Yamamoto Shunsuke 1, Watanabe Kazutoshi 1, Shibata Masatomo 1, Mishima Tomoyoshi 1
	5	Influence of NH3 partial pressure on Al composition of AlGaN by HVPE	Furukawa Co. Ltd.1,　*Nishikouri Yutaka 1,Satou Tadashige 1,Sunakawa Haruo 1,Matsueda Toshiharu 1,
	6	Hydride vapor phase epitaxy of thick AlGaN layers on freestanding GaN substrates	Tokyo Univ. of Agri. & Tech. 1　*Satoh Fumitaka 1,Yamane Takayoshi 1,Akiyama Kazuhiro 1,Murakami Hisashi 1,Kumagai Yoshinao 1,Koukitu Akinori 1
	7	Growth of bulk GaN crystals with high growth rate by GaH-VPE method	Osaka Univ. 1　*Yamada Norihide 1,Kitano Yoshihiro 1,Mamoru Imade 1,Kawahara Minoru 1,Kawamura Fumio 1,Yoshimura Masashi 1,Kitaoka Yasuo 1,Mori Yusuke 1,Sasaki Takatomo 1
△	8	GaN crystal growth by carbothermal reduction and nitridation of continuously-provided Ga2O3	Hokkaido Univ. 1, NIMS 2, Horiba, Ltd. 3, Sumitomo Seika Co. 4　*Akira Miura 1, Shiro Shimada 1, Takashi Sekiguchi 2, Masaaki Yokoyama 3, Bunsho Mizobuchi 4
		Break 15:00〜15:15
	9	The seeded growth of GaN by the Na flux method in Na-N2 atmosphere	IMRAM Tohoku Univ. 1, NIMS 2, Horiba Ltd. 3　*Takahiro Yamada 1, Hisanori Yamane 1, Yongzhao Yao 2, Masaaki Yokoyama 3, Takashi Sekiguchi 2
	10	Growth of AlN single crystals in the Ca-Sn metal solution system.	Osaka Univ. 1,NGK Insulators, LTD. 2,TOYODA GOSEI CO., LTD. 3　*Bessho Masahiro 1,Arai Masaki 1,Kawahara Minoru 1,Miyoshi Naoya 1,Kawamura Fumio 1,Yoshimura Masashi 1,Mori Yusuke 1,Sasaki Takatomo 1,Iwai Makoto 2,Imai Katsuhiro 2,Yamasaki Shirou 3
	11	Growth and characterization of AlN single crystals in the Sn-based metal flux.	Osaka Univ. 1,NGK Insulators, LTD. 2,TOYODA GOSEI CO., LTD. 3　*Kawamura Fumio 1,Bessho Masahiro 1,Arai Masaki 1,Kawahara Minoru 1,Yoshimura Masashi 1,Mori Yusuke 1,Sasaki Takatomo 1,Shimodaira Takanao 2,Iwai Makoto 2,Imai Katsuhiro 2,Yamasaki Shirou 3
	12	The Effect of Additive of Carbon into the Na flux on the Growth of GaN Single Crystals.	The Graduate School of Engineering, Osaka University　Masaki Tanpo, Ryohei Gejo, Masanori Morishita, Naoya Miyoshi, Minoru Kawahara, Fumio Kawamura, Masashi Yoshimura, Yasuo Kitaoka, Yusuke Mori and Takatomo Sasaki
△	13	Growth of Thick GaN Substrates with Diameter of 2 Inch using C Added Na Flux	Graduate School of Engineering, Osaka Univ.　*M. Morishita, M. Tanpo, R. Gejo, N. Miyoshi, M. Kawahara, F. Kawamura, M. Yoshimura, Y. Kitaoka, Y. Mori, T. Sasaki
	14	Theoretical approach to convective flow effects on GaN liquid phase epitaxy	Kyushu Univ. 1, Osaka Univ. 2, RIAM, Kyushu Univ. 3　D. Kashiwagi 1, R. Gejo 2, Y. Kangawa 3, L. J. Liu 3, F. Kawamura 2, Y. Mori 2, T. Sasaki 2, K. Kakimoto 3
	15	Possibility of AlN liquid phase epitaxy using Al and Li3N under an atmospheric pressure	RIAM, Kyushu Univ. 1　Yoshihiro Kangawa 1, Koichi Kakimoto 1
	16	GaN Growth on a- and m-plane by the Ammonothermal Method with Acidic Mineralizer	IMRAM Tohoku Univ. 1, Mitsubishi Chemical 2, Fukuda Crystal Lab. 3　*Kagamitani Yuji 1, Hoshino Naruhiro 1, Ito Hirohisa 2, Ehrentraut Dirk 1, Kawabata Shinichiro 2, Mikawa Yutaka 3, Simura Rayko 1, Yoshikawa Akira 1, Fukuda Tsuguo 1
	17	Photoluminescence of GaN grown by ammonothermal method	CIR 1, MRAM 2, IMR 3, Tohoku Univ.　*Fujii Katushi 1, Fujimoto Gakuyo 1, Goto Takenari 1, Kagamitani Yuji 2, Yoshikawa Akira 2, Yao Takafumi 1,3, Tsuguo Fukuda 2
13.4 III-V Nitride Epitaxial Growth
March 28 9:30〜12:15
28a-ZC-　/ I
	1	Epitaxial growth of GaN using PSD group 4 nitrides as buffer layers (1)	Univ. of Tokyo 1, KAST 2　*Aoyama Akira 1, Goto Yasuhiro 1, Nakano Takayuki 2, Fujioka Hiroshi 1,2
	2	Epitaxial growth of GaN films using PSD group 4 nitrides as buffer layers (2)	The Univ. of Tokyo 1.KAST 2　Goto Yasuhiro 1,Aoyama Akira 1, Okamoto Koichiro 1,Inoue Shigeru 1, Nakano Takayuki 2,Ohta Jituo 1,2,Fujioka Hiroshi 1,2
	3	Epitaxial growth of III nitrides on mirrored Rh(111) substrates	The Univ. of Tokyo 1, KAST 2　*Inoue Shigeru 1, Okamoto Koichiro 1, Nakano Takayuki 2, Ohta Jitsuo 1,2, Fujioka Hiroshi 1,2
	4	Room temperature epitaxial growth of GaN films on b-Ga2O3 substrates	IIS, The Univ. of Tokyo 1, KAST2, Nippon Light Metal3　*Jitsuo Ohta1,2, Atsushi Kobayashi1, Satoshi Kawano1, Hiroshi Fujioka1,2, Shigeo Ohira3
	5	Growth and characterization of GaCrN nanorods on Si substrate	Osaka Univ ISIR 1　Tambo Hiroyuki 1, Yamauchi Yoshiaki 1, Terayama Masatoshi 1, Kimura Shigeya 1, *Hasegawa Shigehiko 1, Asahi Hajime 1
		Break 10:45〜11:00
	6	Growth of GaN nanorods on patterned Si-oxide/Si substrate	Osaka Univ. ISIR 1　Seo J.U. 1, Terayama M. 1, *Hasegawa S. 1, Asahi H. 1
	7	Selective Growth of GaN Nanocolumns by Al nano-pattern	Sophia Univ. 1, CREST, JST 2　Shunsuke Ishizawa 12, Hiroto Sekiguchi 12, Akihiko Kikuchi 12, Katsumi Kishino 12
△	8	Growth of GaN nanowires grown by Ni catalyst-assisted MOCVD	Shizuoka Univ. 1,YAMAHA Co. 2　*Mitsutaka Nishijima 1,Akinori Tajima 1,Yoku Inoue 1,Akihiro Ishida 1,Hidenori Mimura 1,Shingo Sakakibara 2
	9	Evaluation of InGaN/GaN QW nanocolumns LEDs on n-(111)Si substrates by rf-plasma assisted molecular beam epitaxy	Sophia Univ. 1, CREST JST 2　*Hiroto Sekiguchi 1,2, Shunsuke Ishizawa 1,2, Kouki Sakamoto 1, Akihiko Kikuchi 1,2 and Katsumi Kishino 1,2
	10	Evaluation of Polarization dependency of IR photodetector using Si doped GaN/AlN multiple quantum disk nanocolumn	Sophia Univ. 1,CREST. 2　*Kobayashi Goh 1, Uchida hiroyuki 1, Kikuchi Akihiko 1,2, Kishino Katsumi 1,2
13.4 III-V Nitride Epitaxial Growth
March 28 9:15〜18:30
28a-ZM-　/ I
	1	Molecular beam epitaxy of AlN on c-sapphire using ZnO buffer	Tohoku Univ. IMR1,　Tohoku Univ. CIR2, Korea Maritime Univ. Department of Nano Data System 3, Hoseo Univ. Department of Defense Science & Technology 4　*Im In-Ho 1, Park Jin-Sub 1, Minegishi Tsutomu1, Park Seung-Hwan 1, Hanada Takashi1, Chang Ji-Ho 3, Oh Dong-Cheol 4, Cho Meoung-Whan 1,Yao Takafumi1、2
	2	Interface control of AlN grown on c-plane sapphire by NH3-MEE	Waseda Univ.　Koretsune Kosuke 1, Hoshino Yasumasa 1, Hiratsuka Takato 1, Kawaharazuka Atsushi 2, Horikoshi Yoshiji 1
	3	Growth of 2H-AlN(0001)/Si(111) template by using migration enhanced epitaxy under exciting mode change of nitrogen discharge.	Doshisha Univ.　*Nobuhiko Yamabe 1, Hirosi Shimomura 1, Kazuaki Oride 1, Yoshihiro Takeda 1, Kousuke Inui 1, Kentarou Shibataki 1.Tadashi Ohachi 1,
△	4	Large-area Step-height Control of 6H-SiC On-axis Substrates and MBE Growth of AlN	Kyoto Univ. 1,Kyoto Univ. 2,SiXON Corp. 3　*Okumura Hironori 1,Horita Masahiro 2,Suda Jun 2,Kimoto Tsunenobu 2,Yoshioka Yoshimitsu 3,Sasaki Shin 3,Nishiguchi Taro 3,Ikeda Keiichi 3, Hayashi Toshihiko 3,Kinoshita Hiroyuki 3
	5	Effect of the reaction temperature on the formation of AlN fine crystalline particles by a vapor phase method	Res. Inst. of Electron. , Shizuoka Univ.　*Mori Tatsuhiro 1, Ogi Yuya 1, Komoda Hironori 1, Kominami Hiroko 1, Nakanishi Yoichiro 1, Hara Kazuhiko 1
	6	Formation of AlN films by nitridation of Al substrates using ammonia	Kogakuin Univ　*Yamamoto Hiromi 1,Sawada Masaru 1,Sawadaishi Masashi 1,Sugimoto Kouichi 1,Honda Tohru 1
		Break 10:45〜11:00
	7	Initial stage of AlN epitaxial growth on 6H-SiC (000-1) substrates at room temperature	The Univ. of Tokyo 1,2,4, KAST 3, JST-CREST 5 　*M. H. Kim 1, S. Takano 2, J. Ohta 2,3, A. Kobayashi 2, H. Fujioka 2,3, and M. Oshima 1,4,5
△	8	Cracking of piezoelectric AlN thin film deposited on heat-resistant metal substrate at elevated temperature	AIST　*Nishijima Dai, Tabaru Tatsuo, Ooishi Yasunobu, Akiyama Morito
	9	Growth of AlGaN single-crystalline layer by UHV sputtering method（IV）	Tokyo Denki Univ.1　*Koyama Takanori 1,Ito Shuniti 2,Nantou Takaaki 3,Imoto Tomohiro 4,Shinoda Hiroyuki 5,Mutsukura Nobuki 6,
	10	Growth of GaN single-crystalline layer by UHV sputtering method (V)	Tokyo Denki Univ. 1　*Shinoda Hiroyuki 1, Asami Akinori 1, Kodera Shunsuke 1, Hamano Masafumi 1, Mutsukura Nobuki 1
	11	Ultra-Violet Emission of Gd-Doped AlN Films Grown by Sputtering Method	Ritsumeikan Univ.,Dept.of Photonics 1,Ritsumeikan Univ.,Res.Org.Sci.Eng. 2,Osaka Univ.,ISIR 3　Hiromura Tomonori 1,Kosaka Ken-ichi 1,Miyahara Manabu 1,Araki Tsutomu 1,Nanishi Yasushi 1,Emura Shu-ichi 3,*Suzuki Akira 2
△	12	Epitaxial growth of AlN films by pulse sputtering deposition	KAST 1, The Univ. of Tokyo,　*Nakano Takayuki 1, Aoyama Akira 2, Goto Yasuhiro 2, Okamoto Kouichirou 2, Inoue Shigeru 2, Fujioka Hiroshi 1 2
		Lunch 12:30〜13:30
28p-ZM-　/ I
	1	Cathodoluminescence of AlN epilayer on GaN templates grown by NH3-MBE	Univ. of Tsukuba 1, NICP/ERATO-JST 2, UCSB 3　*Hoshi Takuya 1, Sugawara Mariko 1, Koyama Takahiro 1,2, Kaeding F. John. 3, Sharma Rajat 3, Nakamura Shuji 2,3, Chichibu F. Shigefusa 1,2
△	2	Relation between the violet luminescence intensity and defect density in AlN epilayers	Univ. of Tsukuba 1, NICP/ERATO-JST 2, UCSB 3, Waseda Univ. 4　*Koyama Takahiro 1,2, Sugawara Mariko 1, Hoshi Takuya 1, Cantu Pablo 3, Kaeding F. John 3, Sharma　Rajat 3, Onuma Takeyoshi 1,2, Keller Stacia 3, Mishra K. Umesh 3, DenBaars P. Steven 2,3, Nakamura Shuji 2,3, Sota Takayuki 4, Uedono Akira 1, Chichibu F. Shigefusa 1,2
△	3	Luminescence properties of AlN epitaxial films grown by MOVPE	Univ. of Tsukuba 1, NICP/ERATO-JST 2, NGK Insulators, ltd. 3, Waseda Univ. 4　*Onuma Takeyoshi 1,2, Koyama Takahiro 1,2, Kosaka Kei 3, Asai Keiichirou 3, Sumiya Shigeaki 3, Shibata Tomohiko 3, Tanaka Mitsuhiro 3, Sota Takayuki 4, Uedono Akira 1, Chichibu F. Shigefusa 1,2
	4	Strain effect on the valence band ordering in AlN	Waseda Univ. 1, Univ. of Tsukuba 2, NICP/ERATO-JST 3, UCSB 4, NGK Inslators, ltd. 5　Hirokatsu Ikeda 1, Takahiro Okamura 1, Koudai Matsukawa 1, Takahiro Koyama 2,3, Takuya Hoshi 2, Mariko Sugawara 2, Takeyoshi Onuma 2,3, P. Cantu 4, R. Sharma 4, J.F. Kaeding 4, S. Keller 4, J.S. Speck 3,4, S.P. DenBaars 3,4, Shuji Nakamura 3,4, U.K. Mishra 4, Kei Kosaka 5, Keiichiro Asai 5, Shigeaki Sumiya 5, Tomohiko Shibata 5, Mitsuhiro Tanaka 5, Shigefusa Chichibu 2,3, Takayuki Sota 1
	5	Incident Light Angle Dependence of OR, PL and PLE spectra of AlN	Univ. Fukui 1, Kanazawa Univ. 2, Mie Univ. 3　*Kazutoshi Fukui 1, Naoto Nakagawa 1, Masaaki Kishida 1, Tomohide Sakai 1, Shun-ichi Naoe 2, Hideto Miyake 3, Kazumasa Hiramatsu 3
	6	Polarization characteristics of spontaneous surface emission from c and m-plane AlGaN and measurement of emission energy difference	Kogakuin Univ 1,　*Shoichiro Takeda 1, Eiichiro Niikura 1, Mao Yamamoto 1, Hideo Kawanishi 1
△	7	Quantum-confined Stark effect and free carrier screening effect in AlGaN/GaN MQW	Waseda Univ. 1,Stanley Electric Co. Ltd. 2　Fujita Taisuke 1,Toizumi Tomokatu 1,Nakazato Yoshiaki 1,Tackeuchi Atsushi 1,Chinone Takako 2,Liang Ji-Hao 2,Kajikawa Masataka 2
△	8	Free-carrier screening effect for Built-in electric field in AlGaN/GaN MQW	Waseda Univ. 1,Stanley Electric Co. Ltd. 2　Nakazato Yoshiaki 1,Fujita Taisuke 1,Toizumi Tomokatu 1,Tackeuchi Atsushi 1,Chinone Takako 2,Liang Ji-Hao 2,Kajikawa Masataka 2
	9	Scannig near-field optical microscopy of AlGaN-based quantum wells	Yamaguchi Univ. 1　*Saito Takuya 1, Kato Nobuo 1, Murotani Hideaki 1, Yamada Yoichi 1, Taguchi Tsunemasa 1
	10	Recombination dynamics of excitons in AlGaN-based quantum wells	Yamaguchi Univ. 1　*Murotani Hideaki 1, Kato Nobuo 1, Saito Takuya 1, Yamada Yoichi 1, Taguchi Tsunemasa 1
		Break 16:00〜16:15
△	11	Energy relaxation of hot carriers photo-excited in InGaN	Waseda Univ. 1　*Ushiyama Takafumi 1, Toizumi Tomokatsu 1, Nakazato Yoshiaki 1, Tackeuchi Atsushi 1
	12	Temperature dependences of InGaN/GaN MQW PL spectra	Univ. of Electro-Communication 1, Coherent Optical Science 2, Nippon EMC., Ltd 3　*Daigo Takagi 1, Susumu Tabata 1, Naoki Kobayashi 1,2, Jun Yamamoto 3, Yuzaburo Ban 3, Kiyohide Wakao 3
	13	Excitation-wavelength dependence of internal quantum efficiency in InGaN-based quantum wells	Yamaguchi Univ. 1, Mitsubishi Cable Ind. Ltd. 2　*Iwamura Kazuto 1, Shinomura Naohiko 1, Kuronaka Takahiro 1, Murotani Hideaki 1, Yamada Yoichi 1, Taguchi Tsunemasa 1, Kudo Hiromitsu 2, Okagawa Hiroaki 2
△	14	Relationship between threading dislocations and nonradiative recombination centers in green emitting InGaN-based quantum wells studied by scanning near-field optical microscope	Kyoto Univ. 1, Nichia Corp. 2　*Akio Kaneta 1, Mitsuru Funato 1, Yukio Narukawa 2, Takashi Mukai 2, Yoichi Kawakami 1
△	15	Single InGaN/GaN nanocolumn spectroscopy using micro mirror arrays	Kyoto Univ. 1, Sophia Univ. 2, CREST,JST 3　*Kanai Akinobu 1, Kaneta Akio 1,3, Funato Mitsuru 1,3, Kawakami Yoichi 1,3, Kikuchi Akihiko 2,3, Kishino Katsumi 2,3
	16	Characterization of GaN with various dislocation density and impurity concentration by Raman spectroscopy	AIST PERC 1, FED 2, Nihon Univ. 3　*Toshio Kitamura 1, Sin-ichi Nakashima 1, Nayuha Nakamura 1,3, Kei Furuta 2, Hajime Okumura 1
	17	Characterization of GaN grown on the SiC substrate with micropipe by Micro-Raman spectroscopy	AIST PERC 1,Nihon Univ. 2,　*Shigeta Yuki 2,Kitamura Toshiro 1,Nakashima Shin-ichi 1,Nakamura Nayuha 2,Nakamura Katsumitu 2,Takizawa Takeo 2,Okumura Hajime 1,
	18	Cathodeluminescence study on InGaN ternary alloys grown on polycrystalline AlN substrate	Dept. of Electronics and Mechanical Engineering, Chiba Univ. 1,VBL, Chiba Univ. 2,InN-Project as CREST-program of JST, Chiba Univ. 3　*Ishikawa Kenta 1,Che Song-Bek 1,2,3,Ishitani Yoshihiro 1,2,3,Yoshikawa Akihiko 1,2,3
	19	blue cathodoluminescence from prismatic facets of bulk InGaN grown by nitridation of In,Ga sulfides.	Tokyo Univ. of Science 1　*Sema Yuji 1,Hashimoto Takeshi 1,Kobayashi Shingo 1,Kanie Hisashi 1
13.4 III-V Nitride Epitaxial Growth
March 29 9:15〜12:00
29a-ZL-　/ I
	1	Study on surface cleaning process for n-GaN after photoresist patterning	Tokyo Metropolitan Univ　*Yuuki Ikadai 1, Seiji Nakamura 1, Michihiko Suhara 1, Tsugunori Okumura 1
	2	Molecular Dynamics Simulation of Dry Etching for GaN Crystal	Takamatsu National College of Technology 1, Tokyo Institute of Technology 2　Kenji Harafuji 1, Katsuyuki Kawamura 2
	3	Surface oxidation and removing surface oxide of GaN	CIR Tohoku Univ. 1, IMR Tohoku Univ. 2　Fujimoto Gakuyo 1, Fujii Katsushi 1, Minegishi Tsutomu 1, Goto Hiroki 1, Goto Takenari 1, Yao Takafumi 1,2
	4	Cathodoluminescence of the GaN crystallites treated with vacuum annealing and hydrochloric acid etching	Kogakuin Univ. 1　*Okuhata Takashi 1, Baba Taichi 1, Sawada Masaru 1, Sawadaishi Masashi 1, Honda Tohru 1
	5	Photoelectrochemical properties of GaN nanodots	Tohoku Univ. CIR 1, Tohoku Univ. IMR　*Kato Takashi 1, Nakayama Hitoshi 1, Im Inho 1, Fujii Katsushi 1, Yao Takafumi 1,2
		Break 10:30〜10:45
	6	Lift-off process of AlN thin films by photoelectrochemical etching and its application for fabrication of photonic crystals	CINQIE Univ. of Tokyo 1, RCAST Univ. of Tokyo 2, IIS Univ. of Tokyo 3　*Munetaka Arita 1,3, Satomi Ishida 1,2, Satoshi Kako 1,3, Satoshi Iwamoto 1-3, Yasuhiko Arakawa 1-3
	7	Optimaization of n-n+-GaN structure in nitride photocatalyst	Tokyo Univ. of Science 1,JST-ERATO 2,Tohoku Univ. 3　*Iwaki Yasuhiro 1,Ono Masato 1,Yamaguchi Kazuki 1,Kusakabe Kazuhide 1,Fujii Katsushi 2,3,Ohkawa Kazuhiro 1,2
	8	Wavelength dependence of quantum efficiency in nitride-based photocatalyst	Tokyo Univ. of Science 1, JST ERATO 2　*Yamaguchi Kazuki 1, Iwaki Yasuhiro 1, Ono Masato 1, Kusakabe Kazuhide 1, Ohkawa Kazuhiro 1 2
	9	Characterization of In and Al atoms in InAlGaN thin films by PIXE channeling	Yamaguchi Univ. 1　*Hiroaki Sakuta 1,Tsutomu Miyachi 1,Satoshi Kurai 1,Tsunemasa Taguchi 1
	10	Analysis of SiNx/AlGaN interfaces grown by in-situ MOCVD method	Matsushita Electric Industrial 1　*Takizawa Toshiyuki 1, Nakazawa Satoshi 1, Ueda Tetsuzo 1, Tanaka Tsuyoshi 1
13.4 III-V Nitride Epitaxial Growth
March 29 9:00〜12:15
29a-ZM-　/ I
	1	Epitaxial growth of non-polar InN films on m-ZnO substrates	The Univ. of Tokyo 1, KAST 2, Mitsubishi Chemical Group Science and Technology Research Center 3　*Mitamura Kazuya 1, Kobayashi Atsushi 1, Ueno kouhei 1, Ohta Jitsuo 1,2, Oshima Masaharu 1, Fujioka Hiroshi 1,2, Amanai Hidetaka 3, Nagao Satoru 3, Horie Hideyoshi 3
△	2	Hetero-epitaxial growth of high quality semipolar GaN films on ZnO substrates	IIS The Univ. of Tokyo 1, KAST 2,　Mitsubishi Chemical Group Science and Technology Research Center 3　*Atsushi Kobayashi 1, Satoshi Kawano1, Jitsuo Ohta 1,2, Hiroshi Fujioka 1,2, Hidetaka Amanai 3, Satoru Nagao 3, Hideyoshi Horie 3
	3	Epitaxial growth of non-polar AlN films on m-ZnO substrates using low temperature GaN buffer layers	The University of Tokyo 1, KAST 2, Mitsubishi Chemical Group Science and Technology Research Center 3　*Kohei Ueno 1, Atsushi Kobayashi 1, Jitsuo Ohta 1,2, Hiroshi Fujioka 1,2, Hidetaka Amanai 3, Satoru Nagao 3, Hideyoshi Horie 3
△	4	Growth of AlN and AlGaN on various substrates by HT-MOVPE	Fac. Sci. & Technol., 21st Century COE“Nano-Factory”, Meijo Univ.1, Ibiden Co. Ltd.2, Showa Denko K.K.3 　Narihito Okada1, Naohumi Kato1, Syuya Sato1, Takahumi Sumii1, Naoki Fujimoto1, Masataka Imura1, Krishnan Balakrishnan1, Motoaki Iwaya1, Satoshi Kamiyama1, Hiroshi Amano1, Isamu Akasaki1, Hisaaki Maruyama2, Tadashi Noro2, Takashi Takagi2, Akira Bandoh3
	5	Growth of nonpolar (11-20)- and (1-100)-oriented AlBN films by flow-rate modulation epitaxy	NTT Basic Research Labs.　*Akasaka Tetsuya 1, Kobayashi Yasuyuki 1, Makimoto Toshiki 1
△	6	Dependence of misorientation of r-plane sapphire substrate on a-plane GaN film grown by MOVPE	Grad. School of Sci, & Eng., Yamaguchi Univ.　*Minami Masahiro, Mochimizo Noriaki, Araki Masahiro, Hoshino Katsuyuki, Tadatomo Kazuyuki
		Break 10:30〜10:45
	7	Direct deposition of high quality a-plane GaN films grown by high temperature MOCVD	Univ. of Tokushima 1,Samsung Electro-Mechanics 2　*R Matsuoka 1,K Ikeda 1,T Hama 1,K Nishino 1,Y Naoi 1,S Sakai 1,R.J Choi 2,S.M Lee 2,M.Koike 2
	8	MOVPE of nonpolar m-plane GaN and InGaN films on free-standing GaN substrates	Univ. of Tsukuba 1, Rohm Co., LTD 2　*Lu Zhao 1, Yamaguchi Hiroshi 1, Kubota Masashi 1, Okamoto Kuniyoshi 2, Ohta Hiroaki 2, Chichibu F. Shigefusa 1
	9	Characterization of Crystallinity and Polarity on non-polar Gan epitaxial films using HR-XRD apparatus	XRL, Rigaku Corp.　1, Dept. Eng., Meijyo Univ.2　Katsuhiko INABA1, Hiroshi Amano2
	10	Misfit dislocations at the [11\overline{2}0]-oriented InGaN/GaN interface	Tokyo University of Science 1,2, JST-ERATO 3 　*Kazuhide Kusakabe 1, Takashi Yamazaki 1, Iwao Hashimoto 1, Shizutoshi Ando 2, Kazuhiro Ohkawa 1,3
	11	Anisotropic Optical Matrix Elements in Strained GaN Quantum Wells with Various Substrate Orientations	Kanazawa Inst. of Technology 1　*Yamaguchi A. Atsushi
△	12	Polarization properties of InGaN/GaN LEDs fabricated on semipolar (11-22) GaN bulk substrates	Kyoto Univ. 1,Nichia Corp. 2 　*Masaya Ueda 1, Mitsuru Funato 1, Yoichi Kawakami 1, Yukio Narukawa 2, Takashi Mukai 2
13.4 III-V Nitride Epitaxial Growth
March 29 13:15〜17:30
29p-ZN-　/ I
	1	Growth of GaN onto SiC(111)-on-SIMOX(111) substrates	Sanken Electric Co., LTD. 1, Air Water Inc. 2, Osaka Prefecture University 3　*Yanagihara Masataka 1, Machida Osamu 1, Goto Hirokazu 1, Yokoyama Takashi 2, Kobayashi Sumio 2, Izumi katsutoshi 3, Iwabuchi Akio 1
	2	InGaN spontaneous superlattice in N-polar facet	Tokyo Univ. of Science 1, JST ERATO 2　*Furuzuki Tokuma 1, Kusakabe Kazuhide 1, Kuramochi Kouji 1, Yamazaki Takashi 1, Hashimoto Iwao 1, Ohkawa Kazuhiro 1,2
	3	Well-thickness and barrier-height dependence of PL from AlGaN-based quantum well structures	Tokyo Tech. 1, RIKEN 2　* Kajitani Ryo 1, Takeuchi Misaichi 2,1, Kawasaki Koji 1, Aoyagi Yoshinobu 1,2
	4	Influence of growth interruption on AlGaN-based heterointerface formation	RIKEN 1, Tokyo Tech. 2　* Takeuchi Misaichi 1,2, Kajitani Ryo 2, Kawasaki Koji 2, Aoyagi Yoshinobu 2,1
	5	Selective growth of GaN on patterned sapphire substrates by MOVPE	Grad. School of Sci. & Eng., Yamaguchi Univ. 1　*Hoshino Katsuyuki 1, Araki Masahiro 1, Tadatomo Kazuyuki 1
△	6	Influence of misorientation angle of(0001) sapphire substrate on InGaN grown by MOVPE	Grad.School of Sci.& Eng.,Yamaguchi Univ. 1　*Murata Tohru 1,Yanagita Naoto 1,Hoshino Katsuyuki 1,Tadatomo Kazuyuki 1
	7	Fabrication of InGaN/GaN MQW on a micro-facet structure by the selective MOVPE	Nagoya Univ. 1　Nakajima Yoshiki 1,Narita Tetsuo 1,Honda Yoshio 1,Yamaguchi Masashi 1,Sawaki Nobuhiko 1
△	8	Low Temperature Growth of GaN films by Direct Type Near-Atmospheric Plasma-Assisted Chemical Vapor Deposition	NIMS 1, Sekisui Chemical Co. Ltd. 2　*Nagata Takahiro 1, Sakuma Yoshiki 1, Anzai Jyunichiro 2, Kunugi Syunsuke 2, Uehara Tsuyoshi 2, Chikyow Toyohiro 1
		Break 15:15〜15:30
	9	Residual Strain and quality control of AlGaN grown on (10-10)m-plane 6H-SiC	Kohgakuin Univ. 1　*Eiichiro Niikura ,Shoichiro Takeda ,Mao Yamamoto and Hideo Kawanishi
	10	GaN layers grown by MBE using GaN powder and preheated ammonia as sources	Kogakuin Univ 1　 Masaru Sawada 1, Masashi Sawadaishi 1, Kouichi Sugimoto 1, Taichi Baba 1, Toshiaki Kobayashi and Touru. Honda
△	11	Structural characterization of GaN directly grown on off-oriented SiC substrates by MBE	Fac. Eng. Kyoto Univ. 1,Grad. Sch. Eng. Kyoto Univ. 2　*Miyake Hiroki 1,Amari Koichi 2,Suda Jun 2,Kimoto Tsunenobu 2
	12	Growth of cubic GaN on GaAs(001) substrate by RF-MBE.	Dept. Advanced Material Science, The Univ. of Tokyo 1　Kohno Masatoshi 1,Nakamura Teruyuki 1,Kataoka Takahiro 1,Katayama Ryuji,Onabe Kentaro 1
△	13	High quality InN growth on Si (111) substrates with a MEE-AlN buffer layer by RF-MBE	Ritsumeikan Univ. 1, Center for Promotion of the COE Program, Ritsumeikan Univ. 2, Research Organization of Science and Engineering, Ritsumeikan Univ. 3　*Nagase Kazuya 1, Bungi Yuu 1, Naoi Hiroyuki 2, Araki Tsutomu 1, Suzuki Akira 3, Nanishi Yasushi 1
	14	Advantage of LT-AlN buffer layer on (111)MgO substrate for the growth of GaN film by RF-MBE	Waseda Univ. 1　*Suzuki Ryotaro 1,Kawaharazuka Atsushi 1,Horikoshi Yoshiji 1
	15	Low temperature growth of GaN on Si substrate by ECR-plasma MBE method	Osaka Inst. of Tech. 1,Osaka Inst. of Tech. Appl. Phys. 2　*Tagawa Sumito 1,Hirata Kiyotaka, Tomita Hiroyuki, Nishie Noriaki, Horibe Hiroaki, Iwata Keigo, Harada Noriyuki, Yodo Tokuo
	16	Growth of InAlN Thin Films on Si Substrate by Ammoia MBE	Nippon Inst. of Technol. 1,Epitec, Inc. 2　Oishi Shota 1,Ito Akira 1,Kim Seong-Woo 1,Suzuki Toshimasa 1,2
13.4 III-V Nitride Epitaxial Growth
March 30 9:00〜14:45
30a-ZG-　/ I
	1	Epitaxial growth of cubic InN on MgO substrates by PLD	The University of Tokyo 1,2, KAST 3, JST-CREST 4 　*Remi Ohba 1, Kazuya Mitamura 2, Jitsuo Ohta 2,3, Hiroshi Fujioka 2,3 Masaharu Oshima 1,4
	2	Crystal Growth of InN under Electric Field	Dept. Electronics, Tokai Univ　M.Higo,R. Biswas,T.Inushima
	3	Preparation of InN by means of AP-HCVD using In buffer layers.	Shizuoka Univ. 1,Fukui Univ.of Technology 2　*Yokoo Hiroaki 1,Nakamura takato 1,Takahashi Naoyuki 2
	4	MOVPE growth of InN on GaN/α-Al2O3 templates: Effects of GaN thickness	Univ. of Fukui 1　Sugita Kenichi 1, Houchin Yoshinori 1, Hashimoto Akihiro 1, Yamamoto Akio 1
	5	RF-MBE growth of A-plane InN on R-plane sapphire with a GaN buffer layer	Saitama Univ. 1, CREST, JST 2, RIKEN 3　*Shikata Go 1, Hirano Shigeru 1, Fariz Abdulrashid 1, Hirayama Hideki 1 3, Orihara Misao 1 2, Hijikata Yasuto 1, Yaguchi Hiroyuki 1 2, Yoshida Sadafumi 1 2
	6	Low temperature annealing effects of MOVPE InN: Improvement of photoluminescence properties	Univ. of Fukui 1　Nagai Yasuhiko 1, Sugita Kenichi 1, Hashimoto Akihiro 1, Yamamoto Akio 1
		Break 10:30〜10:45
	7	TEM analysis of atom location of oxygen atoms in InN deposited by MBE method	Kyushu Univ. 1, Kyushu Univ. 2, Kyoto Inst. Tech. 3　Momii Shinsuke 1, Kuwano Noriyuki 2, Hata Satoshi 1, Yoshimoto Masahiro 3
	8	Optical study on electron distribution in InN films	Department of Engineering Chiba Univ. 1,VBL Chiba Univ.2, JST-CREST InN Project 3 　Y.Ishitani1,2,3, M.Fujiwara1, X.Wang3, S-B.Che1,2,3, A.Yoshikawa1,2,3
	9	Characterization of carrier concentration distribution in InN films	Dept of Photonics1, Center for Promotion of the COE Program2, Ritsumeikan Univ.　*Fukumoto shinji 1, Takado Shinya 1, Muto Daisuke 1, Noda Mitsuhiko 1, Naoi Hiroyuki 2, Araki Tsutomu 1, Nanishi Yasushi 1, 2
▲	10	Growth and characterization of Mg-dope In-polar InN films	Dept.of Electronics and Mechanical Engineering, Chiba Univ.1, VBL, Chiba Univ.2, InN-Project as CREST-program ofJST, Chiba University 3　○X.Q.Wang　3, S.B.Che1 2 3, Y.Ishitani1 2 3, A.Yoshikawa1 2 3
△	11	Infrared Cathodoluminescence measurement of dark spot distribution in InN films	Dept. of Photonics 1, Center for Promotion of the COE Program 2, Ritsumeikan Univ.　*Akagi Takanobu 1, Harui Satoshi 1, Kosaka Kenichi 1, Naoi Hiroyuki 2, Araki Tsutomu 1, Nanishi Yasushi 1,2
	12	Cathodoluminescence study on 1-ML&FML InN/GaN MQW structures grown by rf-prasma-assisted MBE	Dept. of Electronics and Mechanical Engineering, Chiba Univ.1, VBL, Chiba Univ.2, InN-Project as CREST-program of JST, Chiba Univ.3　*E. S. Hwang 1,3,H. Saito 1,X. Wang 3, S. B. Che 1,2,3, Y. Ishitani 1,2,3, A. Yoshikawa 1,2,3
	13	Growth of characterization of MOVPE InAlN with high In content (I)	Fukui Univ. 1　Houchin Yoshinori 1, Kawabata Kazuyuki 1, Hashimoto Akihiro 1, Yamamoto Akio 1
		Lunch 12:30〜13:30
30p-ZG-　/ I
	1	Structural properties of 1ML InN/GaN multi-quantum wells depending on total supply of InN	Dept.of Electronics and Mechanical Engineering Chiba Univ. 1, VBL Chiba Univ. 2, InN-Project as CREST-program ofJST Chiba Univ. 3　*Saito Hideyuki 1, Che Song-Bek 1 2 3, E.S.Hwang 1, Xinqiang Wang 1 2 3, Yoshihiro Ishitani 1 2 3, Akihiko Yoshikawa 1 2 3
	2	RF-MBE growth of InN/InGaN quantum well structures on 3C-SiC substrates	Saitama Univ 1, CREST,JST 2　Hirano Sigeru 1, Shikata Gou 1, Inoue Takeru 1, Tsukagoshi Yusuke 1, Orihara Misao 1,2, Hijikata Yasuto 1, Yaguchi Hiroyuki 1,2, Yoshida Sadahumi 1,2
	3	RF-MBE Growth of InN/InGaN quantum well structures on 4H-SiC substrates (III)	Saitama Univ. 1, CREST-JST 2　*Orihara Misao 1,2, Hirano Shigeru 1, SHikata Gou 1, Inoue Takeru 1, Tukagoshi Yusuke 1, Hijikata Yasuto 1, Yaguchi Hiroyuki 1,2, Yoshida Sadafumi 1,2,
	4	Growth and characterization of In-polarity InN/In0.7Ga0.3N MQWs on GaN substrates	Dept.of Electronics and Mechanical Engineering, Chiba Univ.1, VBL, Chiba Univ.2, InN-Project as CREST-program ofJST, Chiba University 　* Song-Bek Che 1 2 3, Tomoyasu Mizuno 1, Takuro Shinada 1, Xinqiang Wang 3, Yoshihiro Ishitani 1 2 3, Akihiko Yoshikawa 1 2 3
	5	Optical properties of In-rich InAlN nanocolumns	Sophia Univ. 1,CREST 2　*Kamimura Jumpei 1,Ishizawa Shunsuke 1,2,Kikuchi Akihiko 1,2,Kishino Katsumi 1,2
13.4 III-V Nitride Epitaxial Growth
March 30 9:00〜15:15
30a-ZM-　/ I
	1	Origins of forward leakage current in GaN-based light-emitting diodes	Tohoku University Center for Interdisciplinary Research1,　Tohoku University　Institute of Material Research2　*Seog Woo Lee1, Dong-Cheol Oh2, Hiroki Goto1,Hyunjae Lee1,Sanghyun Lee1,Hyo-jong Lee1,Junseok Ha1,Takashi Hanada2,Takenari Goto1,Meoung-whan Cho2,Takafumi Yao1、2
△	2	Influence of the pattern shape on the EL property of the InGaN-LEDs grown on the patterned sapphire substrate	Grad. School of Sci. & Eng., Yamaguchi Univ. 1,Yamaguchi Pref. Ind. Tech. Inst.　*Hiraoka Masahiro 1,Noda Hiromichi 1,Kono Soichiro 1,Horiguchi Tomohiro 1, Yoshimura Kazumasa 2,Hoshino Katsuyuki 1, Tadatomo Kazuyuki 1
△	3	Influence of the misorientation of (0001) sapphire substrate on the growth of GaN LED structures	Grad. School of Sci. & Eng., Yamaguchi Univ. 1, Yamaguchi pref. Ind. Tech. Inst.2　*Akiko Nakamura 1, Osamu Shimoike 1, Naoto Yanagita 1, Hiromichi Noda 1, Masahiro Hiraoka 1, Kazumasa Yoshimura 2, Katsuyuki Hoshino 1, Kazuyuki Tadatomo 1
△	4	Investigation of high reflectivity contacts for group III nitride semiconductor based light emitting diodes	Meijo Univ. Fac. Sci. & Tech. 1,21st COE“Nano-factory” 2　*Suzuki Atsushi 1,Asai Toshihiro 1,Ochiai Wataru 1,Kumagai Mitsuyasu 1,Koga Ryuichi 1,Ohno Akira 1,Nitta Shugo 2,Iwaya Motoaki 1,Kamiyama Satoshi 1.2, Amano Hiroshi 1.2
△	5	Investigation of p-electrode width in large size GaInN-based near UV light emitting diodes	Meijo Univ. Fac. Sci. & Tech. 1, Meijo Univ. 21st COE 2　Ochiai Wataru 1, Ohno Akira 1, Suzuki Atsushi 1, Kumagai Mitsuyasu 1, Koga Ryuichi 1, Asai Toshihiro 1, Nitta Syugo 2, Iwaya Motoaki 1, Kamiyama Satoshi 1,2, Amano Hiroshi 1,2 and Akasaki Isamu 1,2
△	6	Dependence of lateral growth rate on V/III ratio in non-polar a-plane and m-plane GaN	Meijo Univ. 1　*Kawashima Takeshi 1, Senda Ryota 1, Iida Daisuke 1, Miura Aya 1, Nagai Tetsuya 1, Okadome Yoshizane 1, Tsuchiya Yousuke 1, Iwaya Motoaki 1, Kamiyama Satoshi 1, Akasaki Isamu 1
		Break 10:30〜10:45
	7	Fabrication of violet LED on low-defect-density m-plane GaN	Meijo Univ. 1　*Kawashima Takeshi 1, Senda Ryota 1, Hayakawa Takeshi 1, Hayashi Masako 1, Kasamatsu Yoshinao 1, Iida daisuke 1, Miura Aya 1, Nagai Tetsuya 1, Okadome Yoshizane 1, Tsuchiya Yousuke 1, Iwaya Motoaki 1, Kamiyama Satoshi 1, Amano Hiroshi 1, Akasaki Isamu 1
	8	Fabrication of nonpolar GaN-LED without stacking faults	Rohm Co. 1　*Okamoto Kuniyoshi 1,Ohta Hiroaki 1,Nakagawa Daisuke 1,Sonobe Masayuki 1,Ichihara Jun 1,Takasu Hidemi 1
	9	Optical properties of low dislocation density nonpolar m-plane InxGa1-xN/GaN MQW LEDs	Univ. of Tsukuba 1, Rohm Co., LTD. 2　*Amaike Hiroaki 1, Kubota Masashi 1, Okamoto Kuniyoshi 2, Ohta Hiroaki 2, Ichihara Jun 2, Takasu Hidemi 2, Chichibu F. Shigefusa 1
	10	Fabrication of substrates with a large area for AlGaN vertical deep-UV LEDs	Tokyo Tech. 1, RIKEN 2 　*Koji Kawasaki 1, Tomohiro Maegawa 1, Misaichi Takeuchi 1 2, Yoshinobu Aoyagi 1 2
	11	Improvement in efficiency of AlGaN deep ultraviolet light emitting diode using a new quantum well structure	Tokyo Tech　1, RIKEN　2　　*Koji Kawasaki 1, Ryo Kajitani 1, Tomohiro Maegawa 1, Takumi Ohtsuka 1, Misaichi Takeuchi 1 2, Yoshinobu Aoyagi 1 2
	12	Fabrication of AlGaN vertical 325nm LEDs with a Large emission area	Tokyo Tech 1,Riken 2　*Maegawa Tomohiro 1,Kawasaki Kouji 1,Takeuchi Misaichi 2,1Kajitani Ryo 1,Aoyagi Yoshinobu 1,2
		Lunch 12:15〜13:00
30p-ZM-　/ I
	1	GaN/AlGaN Ultraviolet Laser Diode at 360 nm	Central Research Laboratory, Hamamatsu Photonics K. K. 1, Faculty of Science and Technology, Meijo Univ. 2　*Kuwabara Masakazu 1,Takagi Yasufumi 1, Yoshida Harumasa 1, Amano Hiroshi 2, Kan Hirofumi 1
	2	Demonstration of AlGaN-based deep-UV LEDs grown on AlN templates	Nagoya Inst. of Technology 1,　NGK Insulators 2　*Sumiya Shigeaki 1,2. Kosaka Kei 2. Miyoshi Makoto 1,2. Shibata Tomohiko 2. Tanaka Mitsuhiro 2. Zhu Youhua 1. Egawa Takashi 1
	3	Improvement of efficiency in AlGaN-based UV-emitters by reducing threading dislocations（III)	Meijo Univ. 1, Syouwa-denko 2　*Iida Kazuyoshi 1,Watanabe Hirotaka 1,Takeda Kenichiro 1,Sumii Takafumi 1,Nagai Tetsuya 1,Nagamatsu Kentaro 1,Okada Narihito 1,Balakrishnan 1,Iwaya Motoaki 1,Kamiyama Satoshi 1,Amano Hiroshi 1,Akasaki Isamu 1,Bandoh Akira 2
	4	Temperature-dependent properties of deep-UV AlN light-emitting diodes	NTT Basic Research Laboratories 1　*Taniyasu Yoshitaka 1, Kasu Makoto 1, Makimoto Toshiki 1
	5	Realization of high-power InAlGaN-based UV-LED by optimizing electron injection structure	RIKEN 1, Matsushita Electric Works 2　*Fujikawa Sachie 1, Takano Takayosi 1,2, Kondo Yukihiro 1,2, Hirayama Hideki 1
△	6	Realization of 340nm-band high-power(>16mW)UV-LED using p-type InAlGaN	RIKEN 1, Matsushita Electric Works 2　*Fujikawa Sachie 1, Takano Takayoshi 1,2, Kondo Yukihiro 1,2, Hirayama Hideki 1
	7	Realization of InAlGaN based UV-LED over 16mW of output power by improving AlN/AlGaN template	RIKEN 1, Matsushita electric Works, Ltd. 2　*Takano Takayoshi 1,2, Fujikawa Sachie 1, Kondo Yukihiro 1,2, Hirayama Hideki 1
△	8	250nm single-peaked deep-UV LED fabricated on high quality AlN buffer layer	RIKEN 1, Saitama Univ. 2　Ohashi Tomoaki 1,2, Hirayama Hideki 1, Yatabe Toru 1,2, Kamata Norihiko 2,
	9	Realization of high internal quantum efficiency AlGaN quantum well for 250-280nm deep UV LEDs	RIKEN 1, Saitama Univ. 2　Hirayama Hideki 1, Ohashi Tomoaki 1,2, Yatabe Tohru 1,2, Kamata Norihiko 2
13.5 Group-IV Crystals and IV-IV Alloys
March 27 9:00〜18:00
27a-N-　/ I
	1	Artificiality Ge dot positioning technology with sputter epitaxy technique	Tokyo Univ. Agric.& Technol.　*Yoichi Takahashi 1, Makoto Hirata 2, and Yoshiyuki Suda 3
	2	Real-time stress analysis of Ge nanodot growth on H-Si(111)1x1 and Si(111)7x7 surfaces	JAEA 1, Eiko 2, Tohoku Univ. 3　*Asaoka Hidehito 1, Yamazaki Tatsuya 1,2, Shamoto Shin-ichi 1, Alguno Arnold 3, Suemitu Maki 3
	3	Self-organized formation of "nano-hats" during Si-cap formation onto Ge islands on Si(001)	CIR Tohoku Univ.　*Goto Seiichi 1, Alguno Arnold 1, Suemitsu Maki 1
	4	Size distribution graded Ge nano-dots on Si(100) and its application for a novel soft laser desorption/ionization-mass spectrometry	EMTech AIST 1, ETRI AIST 2　*Nemoto Atsushi 1, Yamamoto Atsushi 2, Sato Hiroaki 1, Torimura Masaki 1, Tao Hiroaki 1
	5	Formation of Germanium dots in Gate-SiO2 and its Application to Memory Devices	Yamanashi Univ　Kubo Mitsuru, Mitsui Minoru, Yamanaka Junji, Arimoto Keisuke, Nakagawa Kiyokazu
▲	6	Quantitative evaluation of atomic composition in isotopically controlled Ge/Si(001) nanostructures	Keio Univ. 1, CREST-JST 2　*Miyamoto Satoru 1, Moutanabbir Oussama 1, Itoh Kohei 1,2
		Break 10:30〜10:45
	7	Study on structural and electrical transport properties of strained SiGe-wires	Univ. of Yamanashi 1,IMR Tohoku Univ. 2,Musashi Inst. of Tech. 3　*Shimizu Kana 1,Arimoto Keisuke 1,Yamanaka Junji 1,Nakagawa Kiyokazu 1,Usami Noritaka 2,Sawano Kentarou 3,Shiraki Yasuhiro 3
	8	Morphological evolution during Ge homoepitaxy derived by analyzing ellipsometric psi-delta trajectories	NTT MI Labs.　*Akazawa Housei 1
	9	Molecular Beam Deposition of Polycrystalline SiGe Films on SiO2	Univ. of Yamanashi 1, Tohoku Univ. 2, Musashi Inst. of Tech. 3　*Mitsui Minoru 1, Tamoto Mamoru 1, Arimoto Keisuke 1, Yamanaka Junji 1, Nakagawa Kiyokazu 1, Usami Noritaka 2, Sawano Kentarou 3, Yasuhiro Shiraki 3
	10	Characterization of bonding structures of HOT wafers	Toshiba Ceramics Co., Ltd. 1, Graduate School of Eng., Nagoya Univ. 2, ESI, Nagoya Univ. 3, CCRAST, Nagoya Univ. 4　*Eiji Toyoda 1,2, Hiromichi Isogai 1, Takeshi Senda 1, Koji Izunome 1, Osamu Nakatsuka 3, Akira Sakai 2, Masaki Ogawa 4, Shigeaki Zaima 1
	11	Characterization of Strained Si Wafers by Synchrotron X-ray Microbeam and Topography	Osaka Univ.1, Meiji Univ.2, and JASRI3　*T. Shimura1, K. Kawamura1, M. Asakawa1, H. Watanabe1, K. Yasutake1, A. Ogura2, K. Fukuda3, O. Sakata3, and S. Kimura3
		Lunch 12:00〜13:00
27p-N-　/ I
△	1	Photoluminescence of neighboring confinement structures on SiGe bulk substrate grown by Czochralski method	IMR Tohoku Univ. 1　*Nihei Ryota 1, Usami Noritaka 1, Yonenaga Ichiro 1, Nose Yoshitaro 1, Nakajima Kazuo 1
△	2	Effect of Ge concentrarion and oxidation temperature on oxidation of SiGe/SOI structures	Kyushu Univ. 1, Fukuryo Semicon 2　Tanaka Masanori 1, Ohka Tatsuo 2, Sadoh Taizoh 1, Enokida Toyotsugu 2, and Miyao Masanobu 1
△	3	Characterization of the anisotropic relaxation ratio of SGOI(110) substrates by asymmetric reflection XRD	MIRAI-ASET 1, MIRAI-AIST 2, The Univ. of Tokyo 3　*Moriyama Yoshihiko 1, Norio Hirashita 1, Naoharu Sugiyama 1, Takagi Shinichi 2,3
	4	Growth of step-graded SiGe layers on Si(110) substrates using gas-source molecular beam epitaxy	Univ. of Yamanashi 1, IMR Tohoku Univ. 2, Musashi Inst. of Technol. 3　Keisuke Arimoto 1, Masato Watanabe 1, Junji Yamanaka 1, Kiyokazu Nakagawa 1, Noritaka Usami 2, Kentarou Sawano 3, Yasuhiro Shiraki 3
	5	Effects of Ion Implantation on Mobility of Dislocation in SiGe/Si Heterostructure	Tohoku-Gakuin Univ. 1　* Hara Akito 1
	6	Strain-Relaxed Si1-xGex Grown by Sputter Epitaxy	Tokyo Univ. of Agric. & Technol.1, NICT 2　*Hanafusa Hiroaki 1,Maekawa Hirotaka 1,Suda Yoshiyuki 1,Kasamatsu Akifumi 2,Hirose Nobuhiro 2,Mimura Takashi 2,Matsui Toshiaki 2
	7	Threading dislocation reduction in SGOI substrate by two step Ge condensation process: Role of pure edge dislocation	ASET-MIRAI 1, AIST-MIRAI 2, The Univ. of Tokyo 3　*Hirashita Norio 1, Tezuka Tsutomu 1, Sugiyama Naoharu 1, Takagi Shinichi 2, 3
	8	Depth analysis of thin SGOI layers using anomalous x-ray diffraction	NTT 1, JASRI 2, CREST 3　*Kawamura Tomoaki 1, Omi Hiroo 1, Mizumaki Masaichiro 2, Kimura Shigeru 2 3
	9	Fabrication of high quality SiGe buffer layers by Si+ ion implantation method	Advanced Research Labo. Musashi Institute of Technology 1,　University of Yamanashi 2　*Hoshi Yusuke 1, Fukumoto Atsushi 1, Hiraoka Yoshiyasu 1, Sawano Kentarou 1, Arimoto Keisuke 2, Yamanaka Junji 2, Nakagawa Kiyokazu 2, Shiraki Yasuhiro 1
	10	Control of strain status in SiGe thin film by epitaxial growth on Si with buried porous Si layer	IMR Tohoku Univ. 1, INL INSA Lyon 2　*Noritaka Usami 1, Kentaro Kutsukake 1, Sevak Amtablian 2, Alain Fave 2, Mustapha Lemiti 2, Kazuo Nakajima 1
		Break 15:30〜15:45
	11	Characterization of local strain in SiGe/Si hetero-mesa structures by X-ray micro diffraction	Graduate School of Eng.,Nagoya Univ.1,ESI,Nagoya Univ.2,JASRI3.CREST-JST4,Toshiba Ceramics Co.,Ltd.5,CCRAST,Nagoya Univ.6　Katsunori Yukawa1,Shogo Mochizuki1,Osamu Nakatsuka2,Akira Sakai1,Kazunori Fukuda3,Shigeru Kimura3,4,Osami Sakata3,Koji Izunome5,Takeshi Senda5,Eiji Toyoda5,Masaki Ogawa6,and Shigeaki Zaima1
	12	Local Strain in Si Pillar - Evaluation by Micro-Raman Spectroscopy-	Kyushu Univ. 1, Toshiba Semicon 2　Tanaka Masanori 1, Sadoh Taizoh 1, Miyao Masanobu 1, Jun Morioka 2, and Kitamura Tokuhide 2
▲	13	Local strain introduction into single crystal Si pillar (2) --- Evaluation of strain and defect by photoluminescence	Art, Science and Technology Center for Cooperative Research, Kyushu Univ. 1, TOSHIBA Corp. Semiconductor Co. 2　Wang Dong 1, Morioka Jun 2, Kitamura Tokuhide 2, Nakashima Hiroshi 1
	14	Evaluation of Electrical Properties of Non-doped SGOI layers	Univ. of Yamanashi 1,IMR Tohoku Univ. 2,Musashi Inst. of Technology 3　*Motoki Sato 1,Keisuke Arimoto 1,Junji Yamanaka 1,Kiyokazu Nakagawa 1,Noritaka Usami 2,Kentaro Sawano 3,Yasuhiro Shiraki 3
	15	Hole Density Dependence of Hole Effective Mass in Strained-Ge Channel Structures	ARL Musashi Inst. of Technology 1, Univ. of Tokyo 2, IMR Tohoku Univ. 3, Univ. of Yamanashi 4　Kunishi Yugo 1, Sawano Kentaro 1, Sato Yu 1, Tomiyama Kiyohiko 2, Okamoto Toru 2, Usami Noritaka 3, Nakagawa Kiyokazu 4, Shiraki Yasuhiro 1
	16	Mobility Spectrum Analysis of Strained Ge Channel on SiGe Virtual Substrate	Keio Univ. 1, Musashi Inst. of Technology Advanced Research Lab. 2　Mouri Tomotaka 1, Itoh M. Kohei 1, Sawano Kentro 2, Myronov Maksym 2, Shiraki Yasuhiro 2
	17	Reduction of off-leak current induced by misfit dislocations in strained Si MOSFET	MIRAI-ASET　*Naoharu Sugiyama 1, Toshinori Numata 2, Norio Hirashita 1, Toshifumi Irisawa 1, Shin-ichi Takagi 2,3
	18	Fabrication of p-type Double quantum-well SiGe Resonant Tunneling Diodes	Graduate School of Eng., Tokyo Univ. Agric. & Technol.1　Y.Sano, S.Nanbu, Y.Suda
	19	Device characteristics of 4H-SiC BJT fabricated by ion implantation	Hosei Univ. 1　*Satoshi Uchiumi 1, Kazumasa Takenaka 1, Tohru Nakamura 1, Masataka Satoh 1
13.6 Group-IV Compounds
March 27 9:00〜12:00
27a-ZC-　/ I
	1	Development of 200mm-diameter 3C-SiC(100)-OI and GaN(0001)/SiC(111)-OI substrates	Air Water INC. 1,Osaka Prefecture Univ., 2　*Asamura Hidetoshi 1,Shinaji Takahiko 1,Yokoyama Takashi 1,Kobayashi Sumio 1,Oouchi Kazuhiro 2,Izumi Katutoshi 2
	2	Growth of 2H-SiC single crystals using Li-Si-C solution	Osaka Univ. 1, Hitachi Metals Ltd. 2　Ogura Takashi 1, *Imade Mamoru 1, Kawamura Fumio 1, Yoshimura Masashi 1, Kitaoka Yasuo 1, Mori Yusuke 1, Sasaki Takatomo 1, Yamazaki Masanobu 2, Suwabe Shigekazu 2
	3	Low-Temperature Formation of 3C-SiC Layers by Atmospheric Pressure Plasma Carbonization of Silicon	Osaka Univ. 1　*Ryota Nakamura1, Masatoshi Aketa1, Hiromasa Ohmi1, Hiroaki Kakiuchi1, Kiyoshi Yasutake1
	4	Polytype switching on solution growth of SiC single crystal	Toyota Motor Corporation 1　Yoshitomo Shintani 1,Hidemitsu Sakamoto 1,Yasuyuki Fujiwara 1,Yukio Terashima 1,Kenji Arakawa 1,Youichiro Kawai 1,Akira Manabe 1
	5	The observation of the poly-type transformation of SiC bulk crystal by TEM	Ion Eng. Res. Inst. Co. 1, Sixon 2, Kyoto Inst. of Tech. 3　*Aoki Masahiko 1, Miyazaki Megumi 1, Kinoshita Hiroyuki 2, Nishiguchi Taroh 2, Yoshimoto Masahiro 3
▲	6	Thermal stability of deep centers in p-type 6H-SiC	Kyoto University 1　Alfieri Giovanni 1,Kimoto Tsunenobu 2
		Break 10:30〜10:45
△	7	Origin of Hillocks Formed on 6H-SiC (000-1)C Surfaces by Molten KOH Etching	Faculty of Eng., Kyoto Univ. 1, Graduate School of Eng., Kyoto Univ. 2　*Shoji Haruki 1, Fukunaga Katsuhiko 2, Suda Jun 2, Kimoto Tsunenobu 2
	8	Analyses of etch pits for α-SiC(0001)Si face by chlorine thermal etching	NAIST　Shimizu Tomoya, Takenami Susumu, *Hatayama Tomoaki, Yano Hiroshi, Uraoka Yukiharu, Fuyuki Takashi
	9	Thermal etching of 4H-SiC (000-1) C face by chlorine gas	NAIST　*Tomoaki Hatayama, Shimizu Tomoya, Takenami Susumu, Yano Hiroshi, Uraoka Yukiharu, Fuyuki Takashi
	10	Investigation the surface of nonpolar plane of SiC after CMP	Investigation the surface of nonpolar plane of SiC after CMP　M.Sasaki1,Y.Yoshioka1,T.Hayashi1,H.Kinoshita1, J.Suda2, T.Kimoto2
	11	Planarization of 4H-SiC 2 Inch Wafers by Catalyst Referred Etching	Osaka Univ. 1, Kumamoto Univ. 2 　H. Hara1, Y. Sano1, K. Arima1, K. Yagi1, J. Murata1, A. Kubota2, H. Mimura1, and K. Yamauchi 1
13.6 Group-IV Compounds
March 28 9:00〜17:00
28a-N-　/ I
	1	Atomic-scale analyses of passivated structures of 4H-SiC(0001) flattened by CAtalyst-Referred Etching	Osaka Univ. 1, Kumamoto Univ. 2　Arima Kenta 1, Okamoto Ryota 1, Hara Hideyuki 1, Sano Yasuhisa 1, Mimura Hidekazu 1, Yagi Keita 1, Kubota Akihisa 2, Yamauchi Kazuto 1
	2	Thermal Diffusivity of SiC Measured by Photopyroelectric (PPE) Method (1) (Effect of defect in N doped 15R-SiC)	Natl.Def.Acad.1,SiXON 2　*Passapong Wutimakun 1, Shin Watanabe 1, Hisashi Miyazaki 1, Yoichi Okamoto 1, Jun Morimoto 1, Toshihiko Hayashi 2 and Hiromu Shiomi 2
	3	Thermal Diffusivity of SiC Measured by Photopyroelectric (PPE) Method (2) (Local Measurement of Mixed Polytype)	Natl.Def.Acad.1,SiXON 2　*Passapong Wutimakun 1, Taichiro Mori 1, Hisashi Miyazaki 1, Yoichi Okamoto 1, Jun Morimoto 1, Toshihiko Hayashi 2 and Hiromu Shiomi 2
	4	Photoinduced electron paramagnetic resonance of intrinsic defects and their electronic levels in 4H-SiC	Univ. of Tsukuba 1, JAEA 2　*T. Umeda 1, T. Inde 1, J. Isoya 1, N. Morishita 2, T. Ohshima 2, H. Itoh 2
	5	Study of stress distribution near dislocations in SiC by microscopic Raman scattering	Kyoto Inst. Tech. 1, Wakayama Univ. 2　*Matsuoka Daisuke 1, Yamamoto Hiroaki 1, Takahashi Kenji 1, Kisoda Kenji 2, Harima Hiroshi 1
	6	Characterization of electrical and phonon properties of 4H-SiC with graded donor concentration	AIST　○Shin-ichi nakashima, Toshio Kitamura, Takeshi Mitani
		Break 10:30〜10:45
△	7	Characterization of Stacking Faults in 4H-SiC Epitaxial Layer by Room-Temperature Photoluminescence Mapping	ISAS/JAXA 1, Tokyo Univ. 2, DENSO CORP. 3　*Norihiro Hoshino 1,2, Michio Tajima 1,2, Masami Naitoh 3, Shoichi Onda 3
	8	Observation of crystalline defects causing pn junction leakage current	Mitsubishi Electric Corp. 1　*Watanabe Tomokatsu 1,Nakao Yukiyasu 1,Fujihira Keiko 1,Miura Naruhisa 1,Tarui Yoichiro 1,Imaizumi Masayuki 1,Oomori Tatsuo 1
△	9	Investigation of carrier lifetime in 4H-SiC epilayers and trial of lifetime control	Kyoto Univ. 1, Toyota Central R&D Lab., Inc. 2　*Danno Katsunori 1, Nakamura Daisuke 2, Kimoto Tsunenobu 1
	10	TIBIC Measurement of 6H-SiC p+n Diodes Irradiated with Oxygen and Nickel Ions	UEC 1, JAEA 2, Okayama Univ. 3　Iwamoto Naoya 12, Onoda Shinobu 2, Hishiki Shigeomi 2, Mishima Kenta 12, Ohshima Takeshi 2, Satoh Takahiro 2, Oikawa Masakazu 2, Kamiya Tomihiro 2, Sakamoto Airi 3, Nakano Itsuo 3, Kawano Katsuyasu 1
△	11	Influence of Auger Recombination on Charge Collection Efficiency in 6H-SiC diodes	JAEA 1, UEC 2　Onoda Shinobu 1, Ohshima Takeshi 1, Hirao Toshio 1, Hishiki Shigeomi 1, Iwamoto Naoya 1,2, Mishima Kenta 1, 2, Kawano Katsuyasu 2
		Lunch 12:00〜13:00
28p-N-　/ I
	1	Clarification of the origin of Schottky barrier height fluctuation in 4H-SiC by the electrodepositon method	Nagoya Inst. of Tech.　Ogawa Kazuya 1, *Kato Masashi 1, Ichimura Masaya 1
	2	An investigation of thermal conductivity of silicon-carbide by molecular dynamics	Kyushu Univ. 1, RIAM, Kyushu Univ. 2　Hori Daisuke 1, *Kawamura Takahiro 1, Kangawa Yoshihiro 2, Kakimoto Koichi 2
▲	3	Simulation for heat generation and temperature distribution in a SiC growth system	RIAM, Kyushu Univ. 1, R & D Division, Furukawa Co., Ltd. 2　*Chen Xuejiang 1, Liu Lijun 1, Tezuka Hiroshige 2, Usuki Yoshiyuki 2, Kakimoto Koichi 1
	4	Effects of gamma-ray irradiation on electrical characteristics of SiC Schottky barrier diode	AIST 1, JAEA 2　Kinoshita Akimasa 1, Tanaka Yasunori 1, Tanaka Tomoyuki 1, Fukuda Kenji 1, Arai Kazuo 1, Hishiki Shigeomi 2, Ohshima Takeshi 2
	5	Gamma-Ray Irradiation Effects on the Characteristics of P-Type 6H-SiC Schottky Diodes	JAEA 1, Univ. Electro-Communi. 2　SudjadiUsman 1, * Ohshima Takeshi 1, Iwamoto Naoya 1,2, Hishiki Shigeomi 1, Kawano Katsuyasu 2
	6	Degradation of the Characteristics of SiC MOSFETs by Gamma-ray Induced Interface Traps	JAEA 1, Univ. of Electro-Communi 2　　*Ohshima Takeshi 1, Hishiki Shigeomi 1, Iwamoto Naoya 1,2, Kawano Katsuyasu 2, Itoh Hisayoshi 1
	7	Analysis of Unusual Charge Pumping Characteristics on SiC MOSFETs	Nara Inst. Sci. Tech.　*Okamoto Dai, Takeda Daisuke, Yano Hiroshi, Hatayama Tomoaki, Uraoka Yukiharu, Fuyuki Takashi
	8	Characterization of SiC-On Insulator structures by high-temperature oxygen implantation probed by positron annihilation spectroscopy	Japan Atoimc Energy Agency 1　Maekawa Masaki 1, Kawasuso Atsuo 1
		Break 15:00〜15:15
	9	DUV-Raman Inspection of Annealing Crystalline Recovery of Al Implanted 4H SiC Epitaxial Layer	Mitsubishi Electric Corp.1, Toray Research Center Inc.2　*Hattori Ryo1, Watanabe Tomokatsu1, Oomori Tatsuo1, Mitani Takeshi2
	10	Generation of amorphous SiO2/SiC interface structure by the first-principles II	JAEA 1,CRIEPI 2　*Miyashita Atsumi 1,Ohnuma Toshiharu 2,Iwasawa Misako 2,Tsuchida Hidekazu 2,Yoshikawa Masahito 1
	11	Activation energy of oxygen dissociation reaction in SiO2/4H-SiC(0001) interface	CRIEPI 1, JAEA 2　Ohnuma Toshiharu 1, Miyashita Atsumi 2, Iwasawa Misako 1, Yoshikawa Masahito 2, Tsuchida Hidekazu 1
△	12	Smart-Cut process of SiC for various crystal planes	Kyoto Univ. Graduate school of Engineering　*K. Senga, J. Suda, T. Kimoto
	13	Evaluation of Shottky Contact Formed on N Ion Implanted 4H-SiC at Low Dose	Housei Univ. 1　Matsuo Hiroshi 1,Sato Masataka 1
	14	Improvement on the metal adhension with Ni ohmic contact to n-Type 4H-SiC	NRC/Nissan 1　*T. Suzuki 1, S. Tanimoto 1, T. Shinohara 1, A. Hanamura 1, T. Suzuki 1
	15	Evaluation of Electrical Properties and Crystallinity for N Implanted 4H-SiC(0001)	Hosei Univ. 1　*Kudo Takahiro 1,Shimura Yousuke 1,Nagata Shouhei 1,Satoh Masataka 1
13.6 Group-IV Compounds
March 29 9:00〜11:45
29a-N-　/ I
	1	Epitaxially Grown Silicon Oxynitride layer on SiC(0001) Surface	Kyushu Univ.　*Hayashi Kenjiro 1, Shirasawa Tetsuro 1, Mizuno Seigi 1, Tanaka Satoru 2, Tochihara Hiroshi 1
	2	Fabrication of BCNO/SiC MIS structure and its interface characterization	Osaka Univ. 1　*Kurimoto Hirofumi 1, Komatsu Naoyoshi 1, Kimura Chiharu 1, Aoki Hidemitsu 1, Sugino Takashi 1
	3	Improvements of channel mobility of Al2O3/SiC MOSFETs by introducing ultra thin SiO2 layer	Tokyo Inst. Tech. P&I Lab. 1, Mitsubishi Electric Corp. 2　*Tomohiro Hatayama 1, Shiro Hino 2, Jun Kato 3, Eisuke Tokumitsu 4, Naruhisa Miura 5, Tatsuo Oomori 6
△	4	Dependencies of electrical properties of Al2O3/SiC-MOSFETs on Al2O3 deposition temperature.	Tokyo Tech. P&I Lab. 1,Mitsubishi Elec. Corp. 2　*Hino Shiro 1, Hatayama Tomohiro 1, Kato Jun 1, Tokumitsu Eisuke 1, Miura Naruhisa 2, Oomori Tatsuo 2
△	5	Characterization and Improvement of Interface Properties at SiO2/SiC Depending on the Oxide Thickness	Osaka Univ. 1　*Yuu Watanabe 1.Makoto Harada 1.Takayoshi Shimura 1.Kiyoshi Yasutake 1.Heiji Watanabe 1
	6	Characterization of 4H-SiC MOSFETs annealed in high pressure water vapor	Nara Inst. of Science and Technology　Daisuke Takeda 1, *Hiroshi Yano 1, Tomoaki Hatayama 1, Yukiharu Uraoka 1, Takashi Fuyuki 1
		Break 10:30〜10:45
	7	Reliability of thin gate-oxide thermally grown with less than 12 nm in thickness on 4H-SiC	Nissan Motor, NRC1　*Tanimoto Satoshi1, Yamagami Shigeharu1, Tanaka Hedeaki1, Hayashi Tetsuya1, Hoshi Hasakatsu1
	8	Development of large current SiC-MOSFET and SBD by improving wafer process	Mitsubishi Electric Corp. 1　*Sumitani Hiroaki 1,Watanabe Hiroshi 1,Aya Sunao 1,Watanabe Shouyu 1,Nakao Yukiyasu 1,Miura Naruhisa 1,Imaizumi Masayuki 1,Kuroda Ken-ichi 1,Oomori Tatsuo 1
	9	1.8mΩcm2, 660V IEMOSFET on carbon-face SiC	AIST 1　*Harada Shinsuke 1, Kato Makoto 1, Suzuki Kenji 1, Okamoto Mitsuo 1, Yatsuo Tsutomu 1, Fukuda Kenji 1, Arai Kazuo 1
	10	Short-circuit withstand capability of SiC-MOSFETs	Mitsubishi Electric Corp. 1　*Nakao Yukiyasu 1,Watanabe Shoyu 1,Miura Naruhisa 1,Imaizumi Masayuki 1,Oomori Tatsuo 1
13.7 Epitaxial Growth Fundamentals
March 28 9:00〜11:30
28a-Q-　/ I
	1	Study for homoepitaxial growth of GaN(0001) using DFT and kMC	Tottori Univ. 1　*Ishii Akira 1, Sekino Masashi 1
	2	Theoretical Study on Dissociation Reaction of Ga–Ga Bond on GaN(0001) Surface	Kyoto Univ. 1 　*Doi Kentaro 1, Ohmori Norifumi 1, Maida Noriaki 1, Szarek Pawel 1, Tachibana Akitomo 1
	3	Theoretical investigation of the stability for GaAs(001)-(2×4)gamma surface	Mie Univ. 1　*Ito Tomonori 1, Akiyama Toru 1, Nakamura Kohji 1
	4	Theoretical investigation for the formation of rotational twins in InP nanowires	Dept. Phys. Eng., Mie Univ. 1　Toru Akiyama 1, Kosuke Sano 1, Kohji Nakamura 1, Tomonori Ito 1
	5	TEM observation of InAs nanowires formed by selective-area MOVPE	G.S.IST Hokkaido Univ. 1,RCIQE 2　*Tomioka Katsuhiro 1,2,Motohisa Junichi 1,2,Hara Shinjiroh 1,2,Fukui Takashi 1,2
		Break 10:15〜10:30
	6	The relationship between Si/Ge/Si(001) interface structure and phonon propagation	Kyushu Univ. 1, RIAM, Kyushu Univ. 2,Miyazaki Univ. 3　 　M. Shoya 1,*T. Wakigawa 1,Y. Kangawa 2,P. Wang 3,A. Fukuyama 3,Y. Akashi 3,T. Ikari 3,K. Kakimoto 2
	7	Epitaxial Lateral Overgrowth of GaAs and mismatched InGaP on GaAs(111)B	Keio Univ.　*Takahashi Shinichi 1,Morikuni Taro 1,Nangu Maki 1
	8	An introducing effect of InAsSb wetting layer upon InAs quantum-dot growth on GaAs layers	Univ. of Electro-communications 1　*Kakuda Naoki 1, Yamaguchi Koichi 1
	9	In-situ X-ray diffraction measurements of Sb irradiated GaAs(001) surface	JAEA SPring-8 1, Univ.of Electro-Comm. 2　*Kaizu Toshiyuki 1, Takahasi Masamitu 1, Kanto Toru 2, Tsukiji Nobukazu 2, Tonomura Shinichi 2, Yamaguchi Koichi 2, Mizuki Jun'ichiro 1
13.8 Nano-impurities and defects
March 27
27a-R-　/ I
		Short Presentation (5min.) 9:30〜11:35 27a-R-1〜25 Poster Session 15:30〜17:30
	1	The stress-induced splitting of infrared absorption lines and stress-induced reorientation of platinum-hydrogen defects in Si	Okayama Univ., 1,　*Kimihiro Sato 1, Kamiura Youichi 1, Yoshihumi Yamashita 1, Takeshi Ishiyama 1,
	2	Ab initio analysis on stability of C-H complex in Si crystal under [110] compressive stress	Okayama Pref. Univ., Dept. of System Engineering　Yanbo Wang , *Koji Sueoka , Seiji Shiba , Seishiro Fukutani
	3	Diffusion Coefficient of Hydrogen in Silicon at Intermediate Temperature Region	Tohoku-Gakuin Univ. 1　*Hara Akito 1
	4	Infrared absorption of low dosage irradiated low carbon concentration CZ-Si crystal(2) Annealing and He bombardment	RIAST, Osaka Pref. Univ. 1, Toyota Motor Co. 2, Toyota Central R&D Labs. 3　*Inoue Naohisa 1, Goto Yasunori 2, Kushida Tomoyoshi 2, Yamazaki Shinya 2, Sugiyama Takahide 3
	5	Evaluation of Light Element Impurities in Low Carbon Content Si Wafers by Luminescence Activation Using Electron Irradiation	ISAS/JAXA 1, Soken Univ. 2, JAEA 3, TOSHIBA CERAMICS 4　Nakagawa Satoko 1,2, Sone Yoshitsugu 1,2, Tajima Michio 1, Ohshima Takeshi 3, Itoh Hisayoshi 3, Kashima Kazuhiko 4, Saitoh Hiroyuki 4
△	6	Distribution measurements of Vacancy Concentration in CZ Silicon Crystal using Low-temperature Ultrasonic Method	Graduate School of Science and Technology, Niigata Univ. 1, Center for Quantum Materials Science, Niigata Univ. 2, Inst. for Materials Research, Tohoku Univ. 3　*Koji Sato1, Masatoshi Hikin 1, Hiroshi Yamada-Kaneta 2, Yuichi Nemoto 1, Osamu Suzuki 2, Shintaro Nakamura 3, Terutaka Goto 1
	7	Experimental analysis of point-defect reactions in CZ silicon crystal growth using low-temperature ultrasonic measurements	Center for Quantum Materials Science, Niigata Univ 1, Graduate School of Science and Technology, Niigata Univ. 2, Inst. for Materials Research, Tohoku Univ. 3　*Hiroshi Yamada-Kaneta 1, Koji Sato 2, Masatoshi Hikin 2, Yuichi Nemoto 2, Osamu Suzuki 1, Shintaro Nakamura 3, Terutaka Goto 2
	8	Monovacancies in as-grown Si crystals- Comment on Goto et al.'s paper	Inst. Materi. Re., Tohoku Univ.　Suezawa Masashi 1, Yonenaga Ichiro 1
	9	Quantum simulation of migration of impurities by IR excitation	ISIR, Osaka Univ.　K. Shirai, N. Yamaguchi, H. Katayama-Yoshida
	10	Fe impurities in n-type Si wafers observed by Mossbauer spectroscopy	Shizuoka Inst of Science and Technology　Yutaka Suzuki 1,Kunifumi Suzuki 2,Kazumasa Sakata 2,Yutaka Yoshida 3
	11	Iron impurities in p-n junction Si-wafer under external voltages	Shizuoka Inst of Science and Technology　Kazumasa Sakata 1,Kunifumi Suzuki 1,Yutaka Yoshida 2
	12	In-situ observation of a stress induced diffusion at the interface between a-Fe and Si wafer by Mossbauer spectroscopy	Shizuoka Inst of Science and Technology　Kunifumi Suzuki 1,Yutaka Yoshida 2
	13	Gettering mechanism of transition metals studied by first principles calculation	Okayama Pref. Univ., Dept. of System Engineering　*Kamimura Ken , Sueoka Koji , Shiba Seiji , Fukutani Seishiro
	14	stable sites and electronic states of copper impurities in Silicon	ISIR, Osaka Univ. 1, Nanoscience and Nanotechnology center, ISIR Osaka Univ. 2　*Yamaguchi Hironobu 1, Shirai Koun 2, Katayama-Yoshida Hiroshi 1,2
	15	Ab initio analysis on oxygen clusters in silicon crystal	Okayama Pref. Univ. Dept. of System Engineering　*Oohashi Fumitaka , Sueoka Koji , Shiba Seiji , Fukutani Seishiro
	16	Growth mechanism of the octahedral oxygen precipitates in CZ silicon crystals	SUMCO TECHXIV　Nakamura Kozo, Maeda Susumu, Nakajima Tomoko, Shimura Seiichi
	17	Boron doping in Si Nanowires Synthesized by Laser Ablation	NIMS 1, Inst. of Appl. Phys. Univ. of Tsukuba 2, S.R.P. Nano Sci. 3, IMR Tohoku Univ. 4　*Naoki Fukata 1,3, Naoya Okada 2, Takao Tsurui 4, Jun Chen 1, Takashi Sekiguchi 1, Noriyuki Uchida 2,3, Kouichi Murakami 2,3
	18	A sensitive method to detect strain in silicon crystal using X-ray diffraction topography	Daido Inst. Tech. 1　Saka Takashi 1
	19	Stress distribution for multi silicon grown by unidirectional solidification	Kyushu University 1,RIAM, Kyushu University 2, Toyota Technological Institute 3　*Hitoshi Matsuo 1,Takahiro Kawamura 1,R. Bairava Ganeshu 2,Yoshihiro Kangawa 2,Koji Arafune 3,Yoshio Ohshita 3,Masafumi Yamaguchi 3,Koichi Kakimoto 2
	20	Extended Version of Analyzing Method of Peak Broadening Factors in X-ray Diffraction Measurements by hkl-Dependence Analysis (1)	NTT Photonics Lab.　Nakashima Kiichi
	21	Nondestructive characterization of carrier mobility in semi-insulating wafers by measuring magnetoresistance effect	Kyoto Inst. of Technology Graduate school of Science and Technology　*Sato Hajime, Maeda Hirofumi, Fukuzawa Masayuki, Yamada Masayoshi
	22	Electronic transport characteristics in yttrium dihydride (YH2+δ) films	Dep. of Functional Materials Science, Saitama Univ. 1, Core Technologies R&D Div. Casio Computer 2, ISSP Univ. of Tokyo 3 　*Tanji Yoshikazu 1, Sakai Masamichi 1, Nakamura Osamu 2, Uwatoko Yoshiya 3, Tajima Hiroyuki 3
	23	Growth and Characterization of optical properties of MgSiO3(Enstatite)	Toukai Univ. 1, NAOJ 2　*Asami Yaeda 1, Wakaki Moriaki 1, Hirosi Sutou 2
	24	Evaluation of defects in N-implanted ZnO single crystal bulk	Hosei Univ. 1,Osaka Kyoiku Univ. 2　*Matsumoto Koji 1,Ooi Motoshi 1,Kuriyama Kazuo 1,Kushida Kazumasa 2
	25	Theoretical study for phase transition of LixFeS2	Murata Mfg. Co., Ltd. 1　Atsushi Honda 1, *Shin'ichi Higai 1, Nobuyuki Wada 1, Yukio Sakabe 1