| 12 Semiconductors B (Exploratory Materials
/ Physics / Devices) |
| 12.1 Exploratory Materials Physics |
| March 29 |
| 29a-P6-@/ III |
| |
|
Poster Session
29a-P6-1`32 9:30`11:30 |
| | 1 | Epitaxial growth and evaluation of Fe3Si/CaF2/Fe3Si/CaF2/Si(111) MTJ structure by molecular beam epitaxy | Univ of Tsukuba 1, Kyushu univ-KASTEC 2, Nanotech-AIST 3@*Teddy Harianto1, Kenichi Kobayashi1, Takashi Suemasu1, Noriyuki Kuwano2, Hiroyuki Akinaga3 |
| ’ | 2 | Investigation of ordering structure in epitaxial Fe3Si thin film. | Tokyo Polytechnic Univ. 1 , Tokyo Inst.Tech. 2 , Kanagawa Ind.Tech.Cent. 3@*Kyouduka Azusa 1, Sawada Yutaka 1, Funakubo Hiroshi 2, Kaneko Satoru 3, Kadowaki Sadako 3, Akiyama Kensuke 3 |
| | 3 | Fabrication of magnetics photonic crystals by Fe3Si lift-off processes | Kyoto Univ. 1, Osaka Univ. 2, Kanagawa Indust. Tech. Center 3@Kunimatsu Shunsuke 1, Imai Akifumi 1, Terai Yoshikazu 2, Akiyama Kensuke 3, Maeda Yoshihito 1 |
| ’ | 4 | Substrate-effects on Hetero epitaxial growth of Fe3Si/SiGe | Kyushu Univ. 1,Kyoto Univ. 2@*Ueda Koji 1,Kumano Mamoru 1,kenjo Atsushi 1,Sadoh Taizoh 1,Maeda Yoshihito 2,Miyao Masanobu 1 |
| ’ | 5 | RBS study of epitaxial growth of Fe3Si on Ge | Kyoto Univ. 1, JAEA 2, Kyushu Univ. 3@Ando Yu-ichiro 1, Jonishi Takafumi 1, Nishikage Yoshiaki 1, Narumi Kazumasa 2, Ueda Koji 3, Sadoh Taizoh 3, Miyao Masanobu 3, Maeda Yoshihito 1,2 |
| | 6 | Interdiffusion of atoms at epitaxial interface between Fe3Si and Ge or Si and its dependence on deposition temperature | Kyoto Univ. 1, JAEA 2, Kyushu Univ. 3@Jonishi Takafumi 1, Ando Yu-ichiro 1, Nishikage Yoshiaki 1, Narumi Kazumasa 2, Ueda Koji 3, Sadoh Taizoh 3, Miyao Masanobu 3, Maeda Yoshihito 1,2 |
| | 7 | Formation of Ge/Fe3Si/Ge multilayer structure by MBE | Dept.Electronics,Kyushu Univ. 1,Kyoto Univ. 2@*Kumano Mamoru 1,Ueda Koji 1Kenjo Atsushi 1,Sadoh Taizoh 1,Maeda Yoshihito 2,and Miyao Masanobu 1 |
| | 8 | Formation of Fe3Si/ultra thin SiO2/Si(111) structure by MBE | Dept.Electronics,Kyushu Univ. 1@*Kumano Mamoru 1,Ueda Koji 1Kenjo Atsushi 1,Sadoh Taizoh 1,and Miyao Masanobu 1 |
| ’ | 9 | Influence of Cu layer on microstructures for ΐ-FeSi2/Cu/Si thin films | ASEM 1 & KASTEC 2, Kyushu Univ, Kanagawa Ind, Tech, Cent 3.@Shogo Takahara 1. Masaru Itakura 1. Noriyuki Kuwano 2. Kensuke Akiyama 3 |
| | 10 | A Study of Impurities behevior in ΐ-FeSi2 formed by an Iron Vacuum Deposition Method |
O.E.Device System R&D Center,Kanazawa Inst. Tech.
1,IMRAM,Tohoku Univ. 2@Ishii Makoto 1,Miyata Toshihiro 1,Minami Tadatugu
1,Uchikoshi Masahito 2,Isshiki Minoru 2 |
| | 11 | Influence of Ώ-FeSi2 inclusion on the luminescence in multiple Si/ΐ-FeSi2 film/Si(001) structures | Inst. of Appl. Phys., Univ. Tsukuba 1 @*Murase Shigemitsu 1, Ugajin Yuta 1, Suemasu Takashi 1 |
| | 12 | Growth and electrical characterization of ΐ-FeSi2/Si(111) heterostructures by MBE using high-purity Fe. | Inst. of Appl. Phys., Univ. of Tsukuba. 1@Suzuno Mitsushi 1,Ugajin Yuta 1,Suemasu Takashi 1 |
| ’ | 13 | RHEED observation of surface on ΐ-FeSi2 single crystals | Ibaraki Univ. 1,JAEA 2@*Wakaya Ippei 1,Muroga Masataka 1,Ouchi Shinji 1,Udono Haruhiko 1,Yamada Yoichi 2,Yamamoto Hiroyuki 2,Kikuma Isao 1 |
| ’ | 14 | Thermal preannealing of single crystalline ΐ-FeSi2 substrate for MBE | Ibaraki Univ. 1,JAEA 2@*Ohuchi Shinji 1,Muroga Masataka 1,Udono Haruhiko 1,Yamada Youichi 2,Yamamoto Hiroyuki 2,Kikuma Isao 1 |
| ’ | 15 | Homoepitaxy of ΐ-FeSi2 films on ΐ-FeSi2 substrate by MBE | Ibaraki Univ. 1,Kanagawa Ind. Tech. Cent. 2,Kyushu Univ. 3@*Muroga Masataka 1,Ohuchi Sinji 1,Udono Haruhiko 1,Akiyama Kensuke 2,Itakura Masaru 3,Kikuma Isao 1 |
| | 16 | Thermoelectric properties of ΐ-FeSi2 single crystals grown from solution | Ibaraki Univ. 1@*Mashiko Shinsuke 1,Yasuda Syuhei 1,Gotoh Kouhei 1,Udono Haruhiko 1,Kikuma Isao 1 |
| | 17 | Radiation effects for film formation and nano-structural changes of iron disilicide thin films. |
The Wakasa-wan Energy Research Center 1 Japan Atomic
Energy Agency 2@*Sasase Masato 1, Yamamoto Hiroyuki 2, Okayasu Satoru 2,
Yamaguchi Kenji 2, Shamoto Shinichi 2, Hojou Kiichi 2 |
| £ | 18 | Sputter etching effects on photoluminescence of \beta-FeSi2 fabricated by ion beam sputter deposition method | Japan Atomic Energy Agency (JAEA) 1, Univ. of Tokyo 2@Zhuravlev Alexey 1,2, Yamamoto Hiroyuki 1, Shimura Kenichiro 2, Yamaguchi Kenji 1, Shamoto Shin-ichi 1, Hojou Kiichi 1, Terai Takayuki 2 |
| ’ | 19 | Recrystallization processes of amorphous layers in Fe ion implanted Si: Dose dependence | ISIR, Osaka Univ.@*Muneyuki Naito 1, Akihiko Hirata 1, Manabu Ishimaru 1, Yoshihiko Hirotsu 1 |
| | 20 | Electronic and structural analyses of a-FeSi2 under high pressure conditions | NIMS 1, Keio Univ. 2, Okayama Univ. of Sci. 3@*Ishii Masashi 1, Yasuo Komukai 2, Mori Yoshihisa 3, Takarabe Kenichi 3, Sakurai Kenji 1 |
| | 21 | Preparation of ΐ-FeSi2 layer by disproportionation reaction method | Waseda Univ. 1@*Hanada toru 1,Ueno Kousuke 1,Miyazawa Shintarou 1,Nakae Hideo 1 |
| | 22 | Energetic and the Electronic Structural Consideration of the IIIA Group Elements Impurity Doping to BaSi2 | Natl. Inst. Adv. Ind. Sci. Technol. 1@*Yoji Imai 1,Akio Watanabe 1 |
| | 23 | Structural study of BaSi2 under high pressure | 0kayama University of Science1, NIMS2@ Mori Yoshihisa1, Nishii Tadashi1, Takarabe Kenichi1, Imai Motoharu2 |
| | 24 | Growth and characterization of In-doped p-type BaSi2 films on Si(111) substrates grown by molecular beam epitaxy | Inst. of Appl. Phys., Univ. of Tsukuba 1, JST-PRESTO 2@*Kobayashi Michitaka 1, Morita Kousuke 1, Suemasu Takashi 1,2 |
| | 25 | Molecular beam epitaxy of BaSi2/CoSi2/Si structure for Schottky Barrier Solar Cells. | Inst.of Appl.Phys.,Univ.of Tsukuba.1,JST-PRESTO.2@*Ichikawa Yoshitake 1,Morita Kousuke 1,Suemasu Takashi 1 2 |
| | 26 | Characterization of the defects in MBE n-BaSi2 films by DLTS measurements | University of Tsukuba 1, JST-PRESTO 2@Morita Kosuke 1, Suemasu Takashi 1,2 |
| | 27 | Electrical property of Mg2Si crystals grown from high purity Mg source | Ibaraki Univ. 1@*Sugimoto Kazuhiro 1,Tamura Daiki 1,Udono Haruhiko 1,Kikuma Isao 1 |
| | 28 | Syntheses of M2Si1-xGex(M=Mg,Ca) powders | Faculty of Eng.RIE 2 Shizuoka Univ. 1 @*Saito Yosuke 1,Momose Yoshimi 2,Koyama Tadanobu 2,Hayakawa Yasuhiro 2,Tatsuoka Hirokazu 1 |
| | 29 | Synthesis of SiOx fibers using Cu- and Ti-silicides | Faculty of Eng. 1, RIE 2, Shizuoka Univ.@*Satoshi Honda 1,Takashi Inaba 2,Kazuki Shiozawa 1,Yoshimi Momose 2,Youitirou Nakanishi 2,Hiroko Kominami 2,kenji Murakami 2,Hirokazu Tatsuoka 1 |
| | 30 | Synthesis of SiOx fibers using cobalt and calcium silicides | Faculty of Eng. 1, RIE 2, Shizuoka Univ.@*Ogino Kazuki 1,Inaba Takashi 1,Nishiura Mutuo 1,Momose Yoshimi 2,Nakanishi youichirou 2,Kominami Hiroko 2,Murakami kenji 2,Tatsuoka Hirokazu 1 |
| | 31 | Structure analysis of self-assembled ErSiX nanostructures formed on Si(100) substrates | Tokyo Univ.of Science 1,RIKEN 2@*Katayama Yusuke 1,Watanabe Ryouki 1,Kobayashi Tomohiro 2,Meguro Takashi 2,Zhao Xinwei 1 |
| ’ | 32 | Structure analysis of self-assembled ErSi2 nanowire formed on Si substrate IV | Tokyo University of Science 1, RIKEN 2 @*R. Watanabe1, Y. Katayama1, T. Kobayashi2, T. Meguro2, X. Zhao1 |
| 12.1 Exploratory Materials Physics |
| March 30 |
| 30a-P10-@/ III |
| |
|
Poster Session
30a-P10-1`17 9:30`11:30 |
| | 1 | Gate voltage control of superconducting proximity effect in thin graphite films |
Univ. Tsukuba 1, RIKEN 2, TIT 3, CREST-JST 4@Akinobu
Kanda 1,4, Takuya Moriki 1, Takashi Sato 1, Hisao Miyazaki 2,4, Shunsuke
Odaka 2, Youiti Ootuka 1, Yoshinobu Aoyagi 2,3,4, Kazuhito Tsukagoshi 2,4
|
| | 2 | Microfabrication of ultra-thin graphite devices | RIKEN 1, Tokyo Inst. of Tech. 2, Univ. of Tsukuba 3, JST-CREST 4@*Shunsuke Odaka 1,2, Hisao Miyazaki 1,4, Takuya Moriki 3, Takashi Sato 3, Akinobu Kanda 3,4, Kazuhito Tsukagoshi 1,4, Youiti Ootuka 3,4, and Yoshinobu Aoyagi 1,2,4 |
| ’ | 3 | Transport propertye of nanographite patterned on Silicon dioxide | RCIQE Hokkaido Univ 1@*Keita Konishi 1,Takasi Matsuda 1,Kanji Yoh 1 |
| | 4 | Electrical transport properties of ultra thin carbon layers grown on SiC(2) | RCIQE Hokkaidou Univ 1, RIES Hokkaidou Univ 2, Kyushu Univ 3@*Ishizaki Tsubasa 1, Matsuda Takashi 1, Konishi Keita 1, Hujii Masahiro 2, Tanaka Satoru 3, Yoh Kanji 1 |
| £ | 5 | Temperature Dependence of Specific contact resistance of Au/Ni/AuGe/n-GaAs Ohmic contacts | AIST@*Chen Yigang 1, Setsuda Kazuki 1, Itatani Taro 1, Ohkubo Masataka 1 |
| £ | 6 | DC Characteristics of n-channel GaAs MESFET at Cryogenic Temperature (I) | AIST@*Chen Yigang 1, Setsuda Kazuki 1, Itatani Taro 1, Ohkubo Masataka 1 |
| | 7 | Theoretical Study on Electronic Structures of GaN-Nanowire/Si(111) Interface | Kyoto Univ.@*Doi Kentaro 1, Kimura Kotaro 1, Asano Yosuke 1, Szarek Pawel 1, Tachibana Akitomo 1 |
| | 8 | X-ray excited optical luminescence (XEOL) analyses of Si oxide defects | NIMS 1, Nagoya Univ. 2@*Ishii Masashi 1, Yoshida Tomoko 2, Sakurai Kenji 1 |
| | 9 | Strain and Vacancy@Defects in InN Films: Theoretical Study | Department of Physics, Faculty of Science, Chiba Univ.@Takei Yuki 1, Nakayama Takashi 1 |
| | 10 | Si Whisker Growth by Hot Filament Method | Tokyo National College of Technol. 1, Shonan Institue of Technol. 2@Hiroshi Nagayoshi 1, Suzuka Nishimura 2, Kazutaka Terashima 2, Nobuo Matsumoto 2 |
| £ | 11 | Physical & Electrical characteristic of Ge2Sb5Te5 for Phase Change Memory Devices | SAMSUNG ELECTRONICS@*=Park DooHwan 1, Bae JunSoo 1, Shin HuiJu 1, Ko HanBong 1, Kuh BongJin 1, Ha YongHo 1, Park SoonOh 1, Kim HeeSeok 1, Chung UIn 1, Moon JooTea 1 |
| | 12 | Orientation control of CoPt by solid phase crystallization of CoPt/MgO/Si structure | Kyushu Univ. 1@Kimura Masayuki 1, *Matsumoto Tatsuya 1, Ueda Kouji 1, Kenjo Atsushi 1,Sadoh Taizoh 1, Miyao Masanobu 1 |
| | 13 | Growth of Tungsten Oxide Whisker and its Characterization. | Tokai Univ@Ryohei Miyazaki,Kohei Hosono,Yuichi Kanazawa,Yoichi Hirose |
| | 14 | Characterization of ZnSnAs2 thin films brown by MBE | Nagaoka Univ. of Tech. 1, Aoyama Gakuin Univ. 2@*Yokoyama Tadasuke 1, Joel T.Asubar 1, Nakamura Shin'ichi 2, Kato Ariyuki 1, Jinbo Yoshio 1, Uchitomi Naotaka 1 |
| | 15 | Synthesis and electrical properties of layered oxyantimonide LnZnOSb (Ln=La, Ce) | Kyushu Institute of Technology 1, Tokyo Institute of Technology 2@*Masaru Fujisawa 1, Koichiro Ozaki 1, Kazushige Ueda 1, Hiroshi Yanagi 2, Hideo Hosono 2 |
| | 16 | First-principles study of h-BN and related layered BN compounds | NIMS@*Kobayashi Kazuaki 1, Watanabe Kenji 1, Taniguchi Takashi 1 |
| | 17 | Estimation of the disordered structure in LiMgN by a Raman scattering spectroscopy | Hosei Univ. 1,Osaka Kyoiku Univ. 2@*Yamashita Yoshihiro 1,Ishikawa Tomonari 1,Kuriyama Kazuo 1,Kushida Kazumasa 2 |
| 12.2 Heterostructures and Quantum Nanostructures |
| March 29 9:00`18:30 |
| 29a-T-@/ III |
| £’ | 1 | Carrier density dependence of nonresonant carrier tunneling in GaAs/AlGaAs double quantum wells | Waseda Univ. 1, Hokkaido Univ. 2@*Lu Shulong 1, Ushiyama Takafumi 1, Fujita Taisuke 1, Kusunoki Kouji 1, Tackeuchi Atsushi 1, Muto Shunichi 2 |
| ’ | 2 | Fabrication of SiGe quantum nanodisk periodically-layered structure by using defect-free neutral beam etching | Tohoku Univ. 1, Keio Univ. 2, Musashi Inst. Tech. 3@*Saito Suguru 1, Yonemoto Masahiro 1, Sagara Akihiko 2, Miyamoto Satoru 2, Sawano Kentaro 3, Itoh Kohei 2, Shiraki Yasuhiro 3, Samukawa Seiji 1 |
| £’ | 3 | Lasing at 1.336 µm from InAs/GaAs quantum dots grown by metal organic chemical vapor deposition | ICNQIE 1, LIMMS/CNRS-IIS 2, Fujitsu Laboratories Ltd. 3, QD Laser Inc. 4@*D. Guimard 1,2, M. Ishida 1, M. Nishioka 1, S. Tsukamoto 1, N. Hatori 1, H. Sudo 3, T. Yamamoto 3, Y. Nakata 1, H. Ebe 1, M. Sugawara 3,4, Y. Arakawa 1,2 |
| ’ | 4 | Time-resolved study of High Circularly Polarized Light from Highly Uniform InAs/GaAs Quantum dots | Waseda Univ. 1, Univ. of Electro-Comm. 2@*Kusunoki koji 1, Tsukiji Nobukazu 2, Umi Takehiko 1, Yamaguchi Koichi 2, Tackeuchi Atsushi 1 |
| ’ | 5 | Highly circular-polarized photon generation from a single quantum dot at zero magnetic field |
RIES 1, Hokkaido Univ. 2, JSPS 3, JST CREST 4@*Kobayashi
Hajime 1, Kumano Hidekazu 1, Endo Michiaki 1, Jo Masahumi 1,3,Suemune Ikuo
1,4, Sasakura Hirotaka 4, Adachi Satoru 2,4, Muto Syunichi 2,4 |
| | | Break 10:15`10:30 | |
| | 6 | Control of Optical Properties of Dynamically-Confined Quantum Structures Formed by Surface Acoustic Waves and Device Application | NTT Basic Research Labs. 1, NTT-AT 2, Paul Drude Inst. 3@Sogawa Tetsuomi 1, Gotoh Hideki 1, Hirayama Yoshiro 1, Saku Tadashi 1, Miyashita Sen 2, Santos Paulo 3, Ploog Klaus 3 |
| ’ | 7 | Electrical tuning of exciton Zeeman splitting in a self-assembled quantum dot | IIS Univ. of Tokyo 1, CINQIE Univ. of Tokyo 2, Dept. of Appl. Phys. Univ. of Tokyo 3, ICORP-JST 4@Toshihiro Nakaoka 1,2, Toshihiko Sato 3, Seigo Tarucha 3,4, Yasuhiko Arakawa 1,2 |
| ’ | 8 | Observation of highly charged exciton emissions from a charge-tunable InAs quantum dot | NEC Corp. 1, AIST 2, JST-SORST 3@*Akihiro Kirihara 1, Junichi Fujikata 1, Shunsuke Ohkouchi 1,2, Shunsuke Kono 1, Akihisa Tomita 1,3, Shinichi Yorozu 1 |
| ’ | 9 | Electrical control of spontaneous emission rate of InAs quantum dot |
Univ. of Tokyo IIS 1, RCAST 2, CINQIE 3, Fujitsu
Labs. 4@Toshiyuki Miyazawa 1, Toshihiro Nakaoka 1,3, Tatsuya Usuki 1, Jun
Tatebayashi 1, Shinichi Hirose 4, Kazuya Takemoto 4, Motomu Takatsu 4, Mitsuru
Sugawara 4, Naoki Yokoyama 4, Yasuhiko Arakawa 1,2,3 |
| ’ | 10 | Gate-controlled nuclear magnetic resonance in quantum Hall systems | Inst. of Industrial Science, Univ. of Tokyo@Satoru Masuubchi 1, Kohei Hamaya 1, Tomoki Machida 1 |
| | | Lunch 12:00`13:00 | |
| 29p-T-@/ III |
| | 1 | Improvement of symmetry of electron wave function in quantum dot by strain reducing layer | Yokohama Univ. 1@*Nakasima Kenta 1.Mukai Kouki 1 |
| | 2 | Optical properties@of@InAs@single-quantum-dots under transverse-electric field | AIST@*Amane Shikanai 1,2, Isao Morohashi 1,2 ,Keishirou Goshima 1,2, Takeyoshi Sugaya 1,2, Kazuhiro Komori 1,2 |
| | 3 | Micro-photoluminescence from negatively charged exciton in GaAs quantum dots | NTT-BRL 1@*Sanada Haruki 1, Gotoh Hideki 1, Sogawa Tetsuomi 1, Kamada Hidehiko 1, Yamaguchi Hiroshi 1, Nakano Hidetoshi 1 |
| | 4 | Near-field Spectroscopy of InAs/InP Single Quantum Dots | Keio Univ. 1,NIMS 2,Fujitsu Lab. 3@*Nakashima Kohji 1,Kubota Ryosuke 1,Saiki Toshiharu 1,Sakuma Yoshiki 2,Usuki Tatsuya 3 |
| | 5 | Radiative lifetime of excitons in strain-compensated quantum dots measured by pump-probe technique under resonant excitation | National Inst. of Information and Communications Technology (NICT) 1,Sophia Univ. 2@*Kujiraoka Mamiko 1,2,Ishi-Hayase Junko 1,Akahane Kouichi 1,Yamamoto Naokatsu 1,Ema Kazuhiro 2,Sasaki Masahide 1 |
| | 6 | Photoluminescence dynamics of Coupled Quantum Dots | The Grad. School of Sci. & Tech, Kobe Univ. 1, Fac. of Eng, Kobe Univ. 2, NICT 3@*Nakatani Hiroaki 1, Kita Takashi 1,2, Kojima Osamu 2, Wada Osamu 1,2, Akahane Kouichi 3, Tsuchiya Masahiro 3 |
| | 7 | Decoherence time of exciton, biexciton and charged exciton in single InAlAs quantum dot | Hokkaido Univ. 1, RIES 2, JST CREST 3@*Yatsu Naoki 1, Sasakura Hirotaka 3, Adachi Satoru 1,3, Muto Shunichi 1,3, Suemune Ikuo 2,3 |
| | 8 | Coherent control of InAs/GaAs single quantum dots | Fundamental and Environmental Res. Labs. NEC 1, System Device Res. Labs. NEC 2, JST-SORST 3@*Shunsuke Kono 1, Akihisa Tomita 1,3, Junichi Fujikata 1, Hideaki Saito 2, and Kenichi Nishi 1 |
| | 9 | Rabi oscillation of excitons in quantum dot ensemble |
National Inst. of Information and Communications
Technology (NICT) 1, Sophia Univ. 2@*Ishi-Hayase Juko 1, Akahane Kouichi
1, Yamamoto Naokatsu 1, Kujiraoka Mamiko 1,2, Ema Kazuhiro 2, Sasaki Masahide
1 |
| | 10 | Anisotropic exchange splitting of charged biexciton in single InAlAs QD | Hokkaido Univ. 1, JST CREST 2@*H. Sasakura 2, R. Kaji 1, S. Adachi 1,2, S. Muto 1,2 |
| | 11 | Observation of spin effects of a single quantum dot studied by photocurrent spectroscopy | RCAST 1, IIS 2, CINQIE 3 Univ. of Tokyo@Hiroyuki Takagi 1, Toshihiro Nakaoka 2,3, Katsuyuki Watanabe 2, Naoto Kumagai 2, Satoshi Iwamoto 1-3, Yasuhiko Arakawa 1-3 |
| | | Break 15:45`16:00 | |
| | 12 | Formation mechanism of nuclear spin polarizations in a single self-assembled InAlAs quantum dot | Hokkaido Univ 1,2 RIES 3, JST CREST 4@*Kaji Reina 1, Sasakura Hirotaka 4, Adachi Satoru 2,4, Muto Shunichi 2,4, Suemune Ikuo 3,4 |
| | 13 | Magnetic field polarity dependence of electron spin precession | Quantum Nano-Tech. Lab., Konan Univ. 1, Graduate School of Natural Science, Konan Univ. 2, NTT Basic Research Labs. 3@Tetsu Ito 1, Wataru Shichi 1,2, Yoshie Nishioka 2, Masao Ichida 1,2, Hideki Gotoh 3, Hidehiko Kamada 3, Hiroaki Ando 1,2, |
| | 14 | Anisotropy of electron g-factor in quantum well | Graduate School of Natural Science, Konan Univ. 1, Quantum Nano-Tech. Lab., Konan Univ. 2, NTT Basic Research Labs. 3@*Wataru Shichi 1,2, Tetsu Ito 2, Yoshie Nishioka 1, Masao Ichida 1,2, Hideki Gotoh 3, Hidehiko Kamada 3, Hiroaki Ando 1,2 |
| | 15 | Fabrication and Optical Characterization of GaAs/InGaAs Heterostructured Nanowires by SA-MOVPE | RCIQE and Hokkaido Univ. 1@*Fukui Masayasu 1,Motohisa Junichi 1,Hara Shinjiroh 1,Fukui Takashi 1 |
| | 16 | Photonic crystal nanocavity incorporating GaAs self-assembled quantum dots: fabrication and characterization | NIMS 1, PRESTO-JST 2, Univ. Tsukuba 3, AIST 4, NEC 5@*T. Kuroda 1,2, T. Mano 1, T. Ochiai 1, K. Sakoda 1,3, N. Koguchi 1, N. Ikeda 3,4, S. Ohkouchi 4,5, Y. Sugimoto 1,3,4, K. Asakawa 3 |
| | 17 | Optical properties of coupled quantum disk-waveguide structure | Nagoya Univ.@M. Yokoi, *M. Yamaguchi and N. Sawaki |
| | 18 | PbTe/PbS Multilayer Mirror for Surface Emitting Quantum Cascade Lasers | Shizuoka Univ. 1@*Ishida Akihiro 1, Kumagai Jun 1, Cao Daoshe 1, Veis Martin 1, Inoue Yoku 1 |
| | 19 | Mid-infrared (`4 Κm) Electroluminescence from CdF2/CaF2 Quantum Heterostructure grown on Si(111) substrate | Tokyo Inst. Tech. 1, SORST-JST 2, CREST-JST 3@*Sano Hiroshi 1, Jinen Keisuke 1, Uchida Kaoru 1, Kodaira Shinji 1, Kumei Masaya 1, Fujihisa Yuuki 1, Watanabe Masahiro 1,2, Asada Masahiro 1,3 |
| | 20 | Optical properties of MBE grown (775)B self-organized quantum wires for VCSELs | Ehime Univ. 1, Osaka Univ. 2@Satoshi Shimomura 1, Shinji Osaki 2, Takeya Fujita 2, Toyokazu Matsugi 1 |
| | 21 | Fabrication of high density InAs quantum dot lasers by using Sb irradiated GaAs surface | CINQIE, Univ. of Tokyo 1, IIS, Univ. of Tokyo 2, RCAST, Univ. of Tokyo 3, Fujitsu Laboratories Ltd. 4, Fujitsu Ltd. 5, OITDA 6, QD Laser, Inc. 7@Watanabe Katsuyuki 2, Kumagai Naoto 2, Nakata Yoshiaki 2, Ishida Mitsuru 2, Hatori Nobuaki 2, Sudo Hisao 4,5,6, Yamamoto Tsuyoshi 4,5,6, Sugawara Mitsuru 4,5,6,7, Arakawa Yasuhiko 1,2,3 |
| 12.2 Heterostructures and Quantum Nanostructures |
| March 30 9:00`15:00 |
| 30a-T-@/ III |
| | 1 | Post oxidation of ultra-thin CaF2 buffer layer on Si and over growth of fluoride heterostructures | Tokyo Tech Univ. 1@*Okawa Takashi,Norihiro Saito,So Watanabe,Kazuo Tsutsui |
| | 2 | Crystalline quality of SrxCd1-xF2 alloy layers on Si substrate and their application to resonant tunneling diodes | Tokyo Tech Univ. 1@*Watanabe Takahito 1,Hamajima Hidetaka 1,Watanabe So 1,Tsutsui Kazuo 1 |
| £ | 3 | TEM Study of RTD Structure Fabricated with epi-Si/Α-Al2O3 Heterostructure |
Toyohashi Univ. of Technology@*Halima Khatun Mst.
1, Mohammad Shahjahan1, Kazuaki Sawada1 and Makoto Ishida1 |
| £ | 4 | Study of Hysteresis in I-V Characteristics in RTDs Fabricated with epi-Si/Α-Al2O3 Heterostructure | Toyohashi Univ. of Technology 1@*Mohammad Shahjahan 1, Halima Khatun Mst. 1, Kazuaki Sawada 1 and Makoto Ishida 1 |
| | 5 | Fablication and characterization of Sb-based diode structures for detecting subuterahertz wave (2 ) | Osaka Inst. Tech.@*Inoue Tatsuya 1,Takahashi Hiroshi 1,Maemoto Toshihiko 1,Sasa Shigehiko 1,Inoue Masataka1, |
| | | Break 10:15`10:30 | |
| | 6 | Drain-current DLTS study of GaAs narrow wire field effect transistors with embedded InAs quantum dots | Hokkaido Univ. RCIQE. 1@*Ooike Noboru 1, Motohisa Junichi 1, Fukui Takashi 1 |
| | 7 | I-V characteristics of Schottky diodes using InAs self-assembled quantum dots as nano-electrodes | Wakayama Univ. 1, Univ. of Tokyo 2, Toyota Tech. Inst. 3@*Nakatani shigeki 1, Seki daisuke 1, Uno kazuyuki 1, Tanaka ichiro 1,2, Kamiya Itaru 3, Sakaki Hiroyuki 2 |
| | 8 | Carrier Storage and Photo Detection by GaAs-based FETs with embedded Type II GaSb Quantum Dots | IIS Univ.of Tokyo@*Takashi Yamazuki 1, kenji Shibata 1, Masato Ohmori 1,Takuya Kawazu 1, Naoki Kondo 1, Hiroyuki Sakaki 1 |
| | 9 | Fabrication and Characterization of GaAs Nanomechanical Resonator | NTT Basic Research Labs. 1, Univ. of Tokyo 2@*Dayu Xiang 1,2, Keiichi Kato 1,2, Imran Maboob 1, Hiroshi Yamaguchi 1, Shinfichi Warisawa 2, Sunao Ishihara 2 |
| | 10 | Temperature dependence of the resonance properties of Si-doped GaAs cantilevers | NTT BRL 1, Tohoku Univ. 2, NTT Elec. Tech. Corp. 3@*Daisuke Ito 1,2, Hajime Okamoto 1, Mineo Ueki 3, Hiroshi Yamaguchi 1,2 |
| | 11 | Piezoresistance of suspended InAs/AlGaSb heterostructure nanobeam | NTT Basic Research Labs. 1, Delft Univ. Technol. 2, Tohoku Univ. 3@*Yamazaki Kenji 1, Samir Etaki 2, Herre S. J. van der Zant 2, Yamaguchi Hiroshi 1,3 |
| | | Lunch 12:00`13:00 | |
| 30p-T-@/ III |
| | 1 | Area control of single InAs quantum dot by selective growth |
RCAST 1, IIS 2, CINQIE 3@*Lee Hyerin 1,3, Guimard
D 2,3, Ishida S 2,3,Nomura M 2,3, Iwamoto S 1,2,3, Arakawa Y 1,2,3 |
| | 2 | Evaluation for the internal structure of InGaAs/GaAs quantum dot using X-ray scattering | Yokohama National Univ. 1@*Yuta Kimura 1,Ryu Kanbara 1,Kohki Mukai 1 |
| | 3 | Fabrication and characterization of InGaAs nanowires by Selective-area MOVPE growth | Hokkaido Univ. and RCIQE 1@*Sato Takuya 1,Noborisaka Jinichiro 1,Motohisa Junichi 1,Hara Shinjiro 1,Fukui Takashi 1 |
| | 4 | Characterization of InGaAs nanowire using high-resolution GISAXS and XRD | Rigaku Corp. 1, Hokkaido Univ. 2@*Yoshiyasu Ito 1, Katsuhiko Inaba 1, Junichi Motohisa 2, Takuya Sato 2 |
| | 5 | MBE-VLS growth of GaAs nanowires on silicon substrate | Nagoya Univ. 1@*Jihyun Paek 1, Tatuya Nishiwaki 1, Masahito Yamaguchi 1, Nobuhiko Sawaki 1 |
| £ | 6 | GaP nanowires grown on Si(111) using Au colloids | NTT BRL 1@*Guoqiang Zhang 1, Kouta Tateno 1, Haruki Sanada 1, Hidetoshi Nakano 1 |
| | 7 | Heterostructure nanowires with bending nodes | NTT Basic Research Labs. 1@*Tateno Kouta 1,Zhang Guoqiang 1,Sanada Haruki 1,Nakano Hidetoshi 1 |
| | 8 | Fabrication of nanowires for self^assembled quantum nanostructure by electron beam induced deposition and its transport properties | National Institute for Materials Science@Noda Takeshi, Mitsuishi Kazutaka, Mano Takaaki, Takehana Kanji, Koguchi Nobuyuki |
| 12.3 Process Technologies and Interface Physics |
| March 27 10:00`18:00 |
| 27a-SM-@/ III |
| | 1 | Optical properties of GaP surfaces treated in HF solution | Gunma Univ. 1@*Morota Hiroaki 1,Adachi Sadao 1,Miyazaki Takayuki 1 |
| | 2 | Plasma Characterization by Optical Emission Analysis of H2O- Inductively Coupled Plasma for Dry Etching | Tokyo Tech P&I Lab. 1, Samco Inc. 2@Matsutani Akihiro 1, Ohtsuki Hideo 2, Koyama Fumio 1 |
| | 3 | Investigation of surface, structural and electrical properties of GaP1-xNx grown by GSMBE | Hokkaido Univ. 1, UCSD 2@*Kaneko Masamitsu 1, Hashizume Tamotsu 1, Vladimir A. Odnoblyudov 2, Charles W. Tu 2 |
| | 4 | Formation of Ultla–Thin Nitrided layer on GaAs substrates by using RF-MBE and their As supply dependence(2) | Dept. of Materials Science & Engineering, Meijo Univ. 1, 21th Century COE gNANO FACTORYh Meijo Univ. 2@Mori Midori 1,Yamamoto Yo 2,Imai Hirotoyo 1,Matsuoka Souta 1,Naritsuka Shigeya 1.2,Maruyama Takahiro 1.2 |
| | 5 | Thickness Variation through Fabrication Process of Anodic Porous Alumina | Tokyo Univ. Agri. & Tech.@*Umezawa Yusuke 1, Morishita Yoshitaka 1 |
| | | Break 11:15`11:30 | |
| | 6 | Electron beam drawing on amorphous arsenic mask for new fabrication process of hetero-structures | Department of Engineering Nagoya Univ. 1,Graduate School of Engineering Nagoya Univ. 2,VBL Nagoya Univ. 3 @@Suzuki Yuji 1,Noritake Yosuke 2,Tabuchi Masao 3,Takeda Yoshikazu 2 |
| | 7 | Size-controlled InP nanostructures formed by the two-step electrochemical process | Research Center for Integrated Quantum Electronics, Hokkaido Univ. 1, Grad. Sch. of Info. Sci. and Tech., Hokkaido Univ. 2@*Taketomo Sato 1,2, Toshiyuki Fujino 1,2, Tamotsu Hashizume 1,2 |
| ’ | 8 | Fablication of 200nm thick SiO2 wire for reduction of collector capacitance in buried SiO2 wire HBT | Tokyo Tech 1, JST-CREST 2@*Yamashita Hiroaki 1, Miura Tsukasa 1, Takahashi Shinnosuke 1, Miyamoto Yasuyuki 1,2, Furuya Kazuhito 1,2 |
| £ | 9 | Plasma Induced Material Composition Alteration in GaInAsP/InP Quantum-Well Structure | QNERC Tokyo Inst. Tech. 1, JST-CREST 2@*Plumwongrot Dhanorm 1, Tamura Yosuke 1, Nishimoto Yoshifumi 1, Kurokawa Munetaka 1, Maruyama Takeo 1 2, Arai Shigehisa 1 2 |
| | 10 | Non-alloyed ohmic contacts to n-GaAs with GaAsNSe grown by metalorganic molecular beam epitaxy | JSPS Research Fellow 1, RIES Hokkaido Univ. 2, JST-CREST 3, NTT-AT 4@*Jo Masafumi 1,2, Sato Hiroyasu 2, Endo Michiaki 2, Suemune Ikuo 2,3, Maruyama Tatsuro 3,4, Akazaki Tatsushi 3,4 |
| ’ | 11 | Influence of ITO surface roughness on the light extraction efficiency of InGaN-LED | Grad. School of Sci., & Eng., Yamaguchi Univ. 1,Yamaguchi Pref. Ind. Tech. Inst. 2@*Ishida Fumio 1,Mitsui Yasutomo 1,Noda Hiromichi 1,Yoshimura Kazumasa 2,Hoshino Katsuyuki 1,Tadatomo Kazuyuki 1 |
| | | Lunch 13:00`14:00 | |
| 27p-SM-@/ III |
| | 1 | New Developments of Semiconductor Materials and Devices for High Frequency Applications | Oki Electric,Corporate R & D Center@*Yoshiaki Sano 1 |
| | 2 | Constant-resistance DLTS of AlGaN/GaN HEMT | Aichi Institute of Technorogy 1, Toyota Central R&D Labs. 2@*Tokuda Yutaka 1,Kazuhiro Yoshida 1,Hiroshi Terashima1,Hiroyuki Ueda 2,Narumasa Soejima 2,Osamu Ishiguro 2, Tetsu Kachi 2 |
| ’ | 3 | Characterization of AlGaN MIS interfaces | Hokkaido Univ. 1 , RCIQE 2@*Mizue Chihoko 1 2 , Kato Hiroki 1 2 , Kotani Jyunji 1 2 , Miczek Marcin 1 2 , Hashizume Tamotsu 1 2 |
| | 4 | Interface Properties of AlGaN/GaN HEMT Structures -Dependence on AlGaN Barrier Layer Thickness- | Hokkaido Inst.Tech. 1@Takahashi Kensuke 1,Sawada Takayuki 1,Imai Kazuaki 1,Kimura Naohito 1 |
| | 5 | Fabrication of GaN-based Schottky barrier diodes on AlN templates and their application to hydrogen gas sensors | NGK Insulators, LTD. 1, Nagoya Inst. of Tech. 2@*Kuraoka Yoshitaka 1, Miyoshi Makoto 1 2, Asai Keiichiro 1, Shibata Tomohiko 1, Tanaka Mitsuhiro 1, Egawa Takashi 2 |
| ’ | 6 | Solar-blind AlGaN p-i-n Photodetectors on AlN templates | Nagoya Institute of Technology 1@*Tokura Fumiyuki 1, Jiang Hao 1, Ishikawa Hiroyasu 1, Egawa Takashi 1 |
| | 7 | Study of AlInN-based Flame Detector | Meikou Inst. 1@Senda Satoru 1, Morita Yosimichi 1, Hao Jiang 1, Egawa Takasi 1 |
| | | Break 16:00`16:15 | |
| ’ | 8 | Planarization of Gallium Nitride by Catalyst Referred Etching |
Osaka Univ. 1,Kumamoto Univ. 2@*Murata Junji 1,Kubota
Akihisa 2,Yagi Keita 1,Sano Yasuhisa 1,Hara Hideyuki 1,Arima Kenta 1, Mimura
Hidekazu 1,Yamauchi Kazuto 1 |
| ’ | 9 | Investigation of solid-phase diffusion of carbon using a SiNx/CNx/GaN structure | RCIQE, Hokkaido Univ. 1@*Kimura Takeshi 1, Sato Taketomo 1, Hashizume Tamotsu 1 |
| | 10 | Electrical Properties of Mg-doped GaN after Rapid Thermal Annealing |
Univ. of Fukui 1, TOYODA GOSEI Co. Ltd. 2@*Kuzuhara
Masaaki 1, Ito Shuichi 1, Nagamori Motoi 1, Saito Hiroshi 1, Shiojima Kenji
1, Yamada Shuhei 2, Shibata Naoki 2 |
| | 11 | Si ion implantation to GaN hetero-structure materials and the electric properties of Ti/Al contact | Hosei Univ. 1,Chemitronics 2@*Tokida Yasutaka 1,Nomoto Kazuki 1,Kasai Takeshi 2,Nakamura@Toru 1,Satoh Masataka 1 |
| ’ | 12 | Characterization of p-GaN surfaces after halogen plasma treatment | RCIQE,Hokkaido Univ. 1,TOYOTA Motor Co. 2,Toyota Central R&D Labs.,Inc. 3@*Ogawa Eri 1,Kokawa Takuya 1,Hashizume Tamotsu 1,Sugimoto Masahiro 2,Kachi Toru 3,Uesugi Tsutomu 3,Soejima Narimasa 3 |
| ’ | 13 | Formation of thin gallium oxide film on GaN using electrochemical processes in a mixed solution with glycol and water | Graduate School of Information Science and Technology, Hokkaido Univ. 1, Research Center for Integrated Quantum Electronics 2,@*Shiozaki Nanako 1,2, Sato Taketomo 1,2, Hashizume Tamotsu 1,2, |
| | 14 | Dry etching and shape control of GaN by ICP | Hosei Univ. 1,Chemitronics 2@*Masakazu Kawada 1, Taku Tajima 1, Kazuki Nomoto 1,Masataka Satoh 1,Tohru Nakamura 1,Takeshi Kasai 2 |
| 12.4 Ultrafast/Functional Electron Devices |
| March 27 9:30`16:15 |
| 27a-X-@/ III |
| | 1 | Low Frequency Noise Characteristics of Ion Implanted AlGaN/GaN HEMT | Hosei Univ.1@*Masahiro Nakajima 1,Takanori Matsushima 1,Kazuki Nomoto 1,Masataka Satoh 1,Tohru Nakamura 1 |
| | 2 | Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current | Hosei Univ. 1@*Kazuki Nomoto 1, Taku Tajima 1, Masatak Satoh 1, Tohru Nakamura 1 |
| | 3 | Miniaturization of T-Gate Structure AlGaN/GaN HEMT with Ion Implantation | Hosei Univ. 1@*Tajima Taku 1, Nomoto Kazuki 1, Satoh Masataka 1, Nakamura Tohru 1 |
| | 4 | Drain voltage dependence of current collapse of AlGaN/GaN HEMT measured by current ICTS method | R&D Association for Future Electron Devices 1,AIST 2,Ritsumeikan Univ. 3@*Tsuchiya Tadayoshi 1,Sazawa Hiroyuki 1, Furuta Kei 1, Hikosaka Kazunori 2, Okumura Hajime 2, Hinoki Akihiro 3, Kurouchi Masahito 1, Araki Tsutomu 3, Suzuki Akira 1,3, Nanishi Yasushi 3 |
| ’ | 5 | The dependence of the off-state breakdown voltage of the GaN buffer layer on traps and threading dislocations | Ritsumeikan Univ. 1, R&D Association for Future Electron Devices 2@*Hinoki Akihiro 1, Kikawa Junjiroh 2, Yamada Tomoyuki 2, Tsuchiya Tadayoshi 2, Kamiya Shinichi 2, Kurouchi Masahito 2, Kosaka Kenichi 1, Araki Tsutomu1, Suzuki Akira 1,2, Nanishi Yasushi 1 |
| | | Break 10:45`11:00 | |
| | 6 | Analysis of Buffer-Related Current Slump in AlGaN/GaN HEMTs | Shibaura Inst. Technol. 1@*Nakajima Atsushi 1, Horio Kazushige 1 |
| | 7 | Analysis of capacitance transient in AlGaN Schottky contacts | RCIQE, Hokkaido Univ. 1,@*Kotani Junji 1, Hashizume Tamotsu 1, |
| | 8 | Time transient of cross-sectional potential distribution of AlGaN/GaN-HEMT by Kelvin probe force microscopy |
R&D Association for Future Electron Devices 1,
Ritsumeikan Univ. 2@*Shinichi Kamiya 1, Tadayoshi Tsuchiya 1, Masahito Kurouchi
1, Akihiro Hinoki 2, Tomoyuki Yamada 1, Junjiroh Kikawa 1, Tsutomu Araki
2, Akira Suzuki 1,2, Yasushi Nanishi 2 |
| ’ | 9 | Surface effects on operation characteristics of AlGaN/GaN HEMT | Hokkaido Univ. 1,RCIQE 2@*Tajima Masafumi 1 2,Kotani Junji 1 2,Basile Alberto 1 2,Hashizume Tamotsu 1 2 |
| | 10 | Effects on electric characteristics of AlGaN/GaN-HEMT by SiN passivation film | Oki Electric Industry Co., Ltd. 1@Marui Toshiharu 1, Tamai Isao 1, Okita Hideyuki 1, Itoh Masanori 1, Hoshi Shinichi 1, Toda Fumihiko 1, Sano Yoshiaki 1, Seki Shohei 1 |
| | 11 | On-Resistance Modulation by Current-Collapse Phenomena for High Voltage GaN-HEMTs on a Sapphire Substrate | Toshiba Corp. Semiconductor Company 1, Toshiba Corp. R&D Center 2@Saito Wataru 1, Nitta Tomohiro 1, Kakiuchi Yorito 1, Saito Yasunobu 1, Tsuda Kunio 2, Omura Ichiro 1 and Yamaguchi Masakazu 1 |
| | | Lunch 12:30`13:30 | |
| 27p-X-@/ III |
| ’ | 1 | Characterization of diamond MISEFTs fabricated on low resistivity polycrystalline diamond |
Waseda Univ. 1, AIST 2@*Kazuyuki Hirama 1, Hidenori
Takayanagi 1, Shintaro Yamauchi 1, Yoshikatsu Jingu 1, Hitoshi Umezawa 2,
Hiroshi Kawarada 1 |
| | 2 | Device simulation of base current for 4H-SiC bipolar junction transistor. | Hosei Univ. 1@*Kenta Tsukamoto 1,Hikaru Sato 1,Tohru Nakamura 1,Masataka Satoh 1 |
| | 3 | Fast recovery pin diode having SiGe anode layer | Yamagata Univ. Graduate School of Science and Engineering 1@*Nagase Shinichi 1, Ida Yusuke 1, Hirose Fumihiko 1 |
| ’ | 4 | Emitter miniaturization of hot electron transistors controlled by insulated gate | Tokyo Inst. 1,JST-CREST.2@*Hino Takahiro 1,Suwa Akira 1,Saito Hisashi 1,Miyamoto Yasuyuki 1,2,Furuya Kazuhito 1,2 |
| ’ | 5 | DC characteristics of HBT with buried SiO2 wire in collector | Tokyo Tech 1, JST-CREST 2@*Takahashi Shinnosuke 1, Miura Tukasa 1, Yamashita Hiroaki 1, Miyamoto Yasuyuki 1,2, Furuya Kazuhito 1,2 |
| | | Break 14:45`15:00 | |
| | 6 | Relation between barrier-layer thickness and source resistance in InP-based HEMTs | Fujitsu Ltd. 1@*Takahashi Tsuyoshi 1, Makiyama Kozo 1, Hara Naoki 1 |
| | 7 | Analysis of Nano-Scale InP-HEMT Using Quantum Corrected Monte Carlo Method | Tokyo Univ. of Science 1,MIT 2@*Hara Kazuhide 1,Kawabata Takahiro 1,Kaga Rieko 1, Fujishiro Hiroki 1,2 |
| ’ | 8 | Monte Carlo Analysis of Nano-Scale InSb-HEMT | Tokyo Univ. of Science 1, MIT 2 @*Yokosawa Sachiko 1, Hasegawa Masayuki 1, Hara kazuhide 1, Fujishiro Hiroki1, 2 |
| | 9 | Improvement of Electron Mobility in InSb Quantum Wells by Dislocation Filtering Layer | Univ. of Oklahoma@*Tetsuya D. Mishima, Madhavie Edrisooriya, Michael B. Santos |
| ’ | 10 | Ultrahigh-speed fT = 520 GHz in InGaAs/InAlAs HEMT | National Inst. of Info. & Com. Tech. 1, Fujitsu Labs. Ltd. 2@*Watanabe Issei 1, Endoh Akira 1, Mimura Takashi 1,2, Matsui Toshiaki 1 |
| 12.4 Ultrafast/Functional Electron Devices |
| March 28 9:30`18:00 |
| 28a-X-@/ III |
| | 1 | Reduction of Gate-Source Length on AlGaN/GaN HEMT | AIST PERC 1, TAIYO NIPPON SANSO 2@*Ide Toshihide 1, Shimizu Mitsuaki 1, Yagi Shuichi 1, Inada Masaki 1, A. Nakajima1, Piao Guanxi 1, Yano Yoshiki 2, Akutsu Nakao 2, Okumura Hajime 1, Arai Kazuo 1 |
| | 2 | Two dimensional electron gas in Al0.4Ga0.6N/Al0.2Ga0.8N hetero structure | Advd. Tech. R&D Ctr. Mitsubishi Electric Corp. 1, RIKEN 2, Tokyo Tech. 3@*Takuma Nanjo 1, Misaichi Takeuchi 2,3, Muneyoshi Suita 1, Yuji Abe 1, Toshiyuki Oishi 1, Yasunori Tokuda 1, Yoshinobu Aoyagi 3,2 |
| | 3 | Al composition dependences of device characteristics in AlGaN/GaN-HEMTs | Oki Electric Industry Co., Ltd.@Hideyuki Okita 1, Shinichi Hoshi 1, Masanori Itoh 1, Toshiharu Marui 1, Yoshiaki Morino 1, Fumihiko Toda 1, Yoshiaki Sano 1, Shouhei Seki 1 |
| ’ | 4 | AlGaN/GaN HEMTs with wrap gate structures | Hokkaido Univ. 1, RCIQE 2@Tamura Takahiro 1,2, Kotani Junji 1,2, Kasai Seiya 1,2, Hashizume Tamotsu 1,2 |
| ’ | 5 | Low leakage current ITO schottky electrode for AlGaN/GaN HEMT | Eudyna Devices Inc. 1@*Matsuda Keita 1, Kawasaki Takeshi 1, Nakata Ken 1, Igarashi Takeshi 1, Yaegassi Seiji 1 |
| | | Break 10:45`11:00 | |
| ’ | 6 | Inversion-type n-channel GaN MOSFET with HfO2 Gate Insulator | Dept. of Quantum Eng., Nagoya Univ. 1, VBL, Nagoya Univ. 2, Inst. for Advanced Research, Nagoya Univ. 3, Matsushita Electric Industrial Co. Ltd 4@*Sugiura Shun 1, Kishimoto Shigeru 1,2, Mizutani Takashi 1,3, Ueno Hiroaki 4, Ueda tetsuzou 4, Tanaka Tsuyoshi 4 |
| | 7 | Planer-type Schottky barrier diodes based on high-electron-mobility AlGaN/AlN/GaN structures | NGK Insulators, LTD. 1, Nagoya Institute of Technology 2,@Miyoshi Makoto 1, Kuraoka Yoshitaka 1, Asai Kei-ichiro 1, Shibata Tomohiko 1, Tanaka Mitsuhiro 1, Egawa Takashi 2 |
| | 8 | Study of Breakdown Voltage of GaN Vertical Schottky Barrier Diodes with Mesa Structures. | Sumitomo Electric Indu. 1@Miyazaki Tomihito 1,Horii Taku 1,Hashimoto Shin 1,Saitou Yuu 1,Tanabe Tatsuya 1,Namikawa Yasuo 1,Kiyama Makoto 1 |
| | 9 | GaN-based vertical conducting diodes on Si substrates | NTT Basic Research Labs. 1@*Nishikawa Atsushi 1, Kumakura Kazuhide 1, Makimoto Toshiki 1 |
| ’ | 10 | High breakdown voltage of GaN-based vertical conducting diodes on n-GaN substrates | NTT Basic Research Labs.@*Nishikawa Atsushi 1, Kumakura Kazuhide 1, Makimoto Toshiki 1 |
| | 11 | Emitter size dependence of I-V characteristics for uniform base Pnp AlGaN/InGaN/GaN DHBTs | NTT Basic Research Labs. 1@*Kumakura Kazuhide 1, Makimoto Toshiki 1 |
| | | Lunch 12:30`13:30 | |
| 28p-X-@/ III |
| | 1 | Enhancement-Mode AlGaN/AlN/GaN HEMT with Low On-State Resistance and High Breakdown Voltage | Nichia Corp.@*Ohmaki Yuji 1,Tanimoto Masashi 1,Akamatsu Shiro 1,Mukai Takashi 1 |
| | 2 | Normally-off operation in AlGaN/GaN/AlGaN FET (2) | AIST 1,TAIYO NIPPON SANSO 2@Masaki Inada 1,Mitsuaki Shimizu 1,Shuichi Yagi 1,Guanxi Piao 1,Akira Nakajima 1,Toshihide Ide 1,Hajime Okumura 1,Yoshiki Yano 2,Nakao Akutsu 2 |
| | 3 | Normally-off Operation in AlGaN/GaN FETs Using p-type InGaN Cap Layer | AIST 1, Taiyo Nippon Sanso Co. 2@*Shimizu Mitsuaki 1, Guaxi Piao 1, Okumura Hajime 1, Yano Yoshiki 2, Akutsu Nakao 2 |
| ’ | 4 | Normally-off mode AlGaN/GaN HEMTs with InGaN Cap Layer | Dept. of Quantum Eng., Nagoya Univ. 1,VBL, Nagoya Univ. 2,Inst. for Advanced Research, Nagoya Univ. 3, POWDEC K.K 4@*Ito Masafumi 1, Kishimoto Shigeru 1,2, Nakamura Fumihiko 4, Mizutani Takashi 1,3 |
| | 5 | Hight power and low loss normally-off mode AlGaN/GaN HFETs with p-type GaN | Meijo Univ.@*Fujii Takahiro, Tsuyukuti Norio, Iwaya Motoaki, Kamiyama Satoshi, Amano Hitoshi, Akasaki Isamu |
| ’ | 6 | Low on resistance normally-off mode AlGaN/GaN Junction HFETs | Meijo Univ@*Nega ryohei,Fujii Takahiro,Nakamura Syougo,Tsuyukuchi Norio,Kawasima Takeshi,Iwaya Motoaki,Kamiyama Satoshi,Amano Hiroshi,Akasaki Isamu |
| | 7 | Lowering On-Resistance of a Vertical AlGaN/GaN Normally-off Device | TOYOTA Central R&D Labs., Inc. 1, TOYOTA Motor Corp. 2@*Masakazu Kanechika 1, Masahiro Sugimoto 2, Narumasa Soejima 1, Hiroyuki Ueda 1, Osamu Ishiguro 1, Masahito Kodama 1, Eiko Hayashi 1, Tsutomu Uesugi 1, Tetsu Kachi 1 |
| | 8 | Study of Normally-off InAlN/GaN HEMTs | Toyota Central R&D Labs. 1, Toyota Motor Corp. 2@*Hiroyuki Ueda 1, Masahiro Sugimoto 2, Masahito Kodama 1, Eiko Hayashi 1, Narumasa Soejima 1, Masakazu Kanechika 1, Osamu Ishiguro 1, Tsutomu Uesugi 1, Tetsu Kachi 1 |
| | | Break 15:30`15:45 | |
| | 9 | Investigation of scattering mechanism of two-dimensional electron gas in InAlN/GaN heterostructure | NTT Photonics Lab. 1, NTT-AT 2 @Masanobu Hiroki 1, Haruki Yokoyama 1, Noriyuki Watanabe 1, Yasuhiro Oda 1, Takuma Yagi 2, Narihiko Maeda 1, Takashi Kobayashi 1 |
| ’ | 10 | Sheet carrier density as a function of strain in barrier layer for InAlN/GaN HEMT structures | NTT Photonics Lab. 1, NTT-AT 2@*Oda Yasuhiro 1, Watanabe Noriyuki 1, Hiroki Masanobu 1, Yokoyama Haruki 1, Yagi Takuma 2, Kobayashi Takashi 1 |
| | 11 | Application of Insulated-Gate Structures in InAlN/GaN Heterostructure Field-Effect Transistors | NTT Photonics Labs. 1, NTT-AT 2, NTT Basic Research Labs. 3@Maeda Narihiko 1, Hiroki Masanobu 1, Watanabe Noriyuki 1, Oda Yasuhiro 1, Yokoyama Haruki 1, Yagi Takuma 2, Makimoto Toshiki 3, Enoki Takatomo 1, Kobayashi Takashi 3 |
| | 12 | Effects of SiN passivation films formed by Cat-CVD on electrical properties of InAlN/GaN HFETs | NICT 1, Fujitsu Lab. 2@*Higashiwaki Masataka 1, Mimura Takashi 1,2, Matsui Toshiaki 1 |
| | 13 | Device characteristics of short-gate InAlN/GaN HFETs (II) | NICT 1, Fujitsu Lab. 2@*Higashiwaki Masataka 1, Mimura Takashi 1,2, Matsui Toshiaki 1 |
| | 14 | Characterization of Leakage Current of AlGaN/GaN HFETs on Si Substrates | Sanken Electric Co.,Ltd 1@*Iwakami Shinichi 1,Machida Osamu 1,Baba Ryohei 1,Yanagihara Masataka 1,Izawa Michiyoshi 1,Goto Hirokazu 1 |
| | 15 | On-resistance at collapse and pulse breakdown voltage of AlGaN/GaN HFET on Si Substrate | Sanken Electric Co. 1@*Kaneko Nobuo 1,Baba Ryohei 1,Yanagihara Masataka 1,Machida Osamu 1,Iwakami Shinichi 1,Ehara Toshihiro 1,Goto Hirokazu 1,Iwabuchi Akio 1 |
| | 16 | Fabrication of large current AlGaN/GaN HFET on Si with 60mΆ,800V | Sanken Electric Co.,Ltd. 1@@*Kumakura Hiromichi 1, Ehara Toshihiro 1, Kaneko Nobuo 1, Kondou Takashi 1, Shikauchi Hiroshi 1, Iwakami Shinichi 1, Machida Osamu 1, Goto Hirokazu 1, Iwabuchi Akio 1 |
| | 17 | Evaluation of Ron Qg for high power AlGaN/GaN HFET | The Furukawa Electric Co., Ltd@*Nariaki Ikeda 1, Syuusuke Kaya 1, Jiang Li 1, Mitsuru Masuda 1, Takahiko Nomura 1, Seikoh Yoshida 1 |
| 12.5 Optoelectric Properties and Devices |
| March 27 9:30`16:30 |
| 27a-ZK-@/ III |
| ’ | 1 | Study of iron precipitation in polycrystalline silicon substrate for solar cells | Toyota Tech. Inst. 1, Meiji Univ. 2, JEOL 3@Kawai Hideaki 1, Arafune Koji 1, Sai Hitoshi 1, Tanaka Satoshi 2, Ogura Atushi 2, Kuba Toshiko 3, Ohshita Yoshio 1, Yamaguchi Masafumi 1 |
| ’ | 2 | Evaluation of polycrystalline silicon substrates for solar-cells by Raman spectroscopy | Meiji Univ. 1,Toyota Tech. Inst. 2,ISAS/JAXA 3@Satoshi Tanaka 1,Keita imai 1,Atsushi Ogura 1,Yoshio Ohshita 2,Koji Arafune 2,Hideaki Kawai 2,Futoshi Kusuoka 2,Michio Tajima 3,Masaaki Inoue 1,3 |
| ’ | 3 | Characterization of Multicrystalline Si Wafers by PL imaging while HF etching | ISAS/JAXA 1, Tokyo Univ. 2@*Sugimoto Hiroki 1,2, Tajima Michio 1 |
| ’ | 4 | Origin of Photoluminescence Defect Patterns in Multicrystalline Silicon Wafers for Solar Cells | ISAS/JAXA 1, Tokyo Univ. 2, Dai-ichi Dentsu Co. 3, Dai-ichi Kiden Co. 4, Tokyo Univ. of Agri. & Tech. 5@*Kiyoto Araki 1,2, Hiroki Sugimoto 1,2, Michio Tajima 1, Takeshi Eguchi 3, Isao Yamaga 4, Marwan Dhamrin 5, Tadashi Saitoh 5 |
| ’ | 5 | Estimation of sub-grain boundary density and its influence on minority carrier diffusion length in bulk multicrystalline silicon | IMR, Tohoku Univ.@Tsuyoshi Ohtaniuchi, Kentaro Kutsukake, Noritaka Usami, Kozo Fujiwara, Yoshitaro Nose, Kazuo Nakajima |
| | | Break 10:45`11:00 | |
| | 6 | Influence of multicrystalline structure on sub-grain boundary formation in bulk multicrystalline Si | IMR, Tohoku Univ.@*Kutsukake Kentaro 1, Usami Noritaka 1, Fujiwara Kozo 1, Nose Yoshitaro 1, Nakajima Kazuo 1 |
| | 7 | Characterization of Ga doped and B doped polycrystalline silicon ingots | Toyota Tech. Inst. 1, Sharp Corp. 2@*Kusuoka Futoshi 1, Higo Teruaki 2, Arafune Koji 1, Sai Hitoshi 1, Ohshita Yoshio 1, Yamaguchi Masafumi 1 |
| ’ | 8 | Local Characterization of Photovoltage on Polycrystalline Silicon Solar Cells by Kelvin Probe Force Microscopy | IIS, Univ. of Tokyo 1, CINQIE, Univ. of Tokyo 2, Graduate School of Engineering, Nagoya Univ. 3@*Takihara Masaki 1, Igarashi Takatoshi 1, Ujihara Toru 3, Takahashi Takuji 1,2 |
| | 9 | Minority Carrier Diffusion Length Measurements on Polycrystalline Silicon Solar Cells by Kelvin Probe Force Microscopy | IIS, Univ. of Tokyo 1, CINQIE, Univ. of Tokyo 2, Graduate School of Engineering, Nagoya Univ. 3@*Takihara Masaki 1, Ujihara Toru 3, Takahashi Takuji 1,2 |
| ’ | 10 | Effect and analysis of hydrogen gas treatment on spherical Si solar cells | Ritsumeikan Univ. 1, Clen Venture 21 Co. 2@*Yoshimura Tomohiro 1, Minemoto Takashi 1, Takakura Hideyuki 1, Murozono Mikio 2 |
| ’ | 11 | Influence of surface damage on spherical Si solar cells | Ritsumeikan Univ. 1@*Hattori Hirohiko 1,Minemoto Takashi 1,Takakura Hideyuki 1 |
| | | Lunch 12:30`13:30 | |
| 27p-ZK-@/ III |
| | 1 | Relationship between solar cell performance and undercooling depth in spherical Si solar cells fabricated by dropping method. | Ritsumeikan Univ. 1, IMR Tohoku Univ. 2, CV21 Co. 3@Minemoto Takashi 1, HayashiShota 1, Usami Noritaka 2, Nakajima Kazuo 2, Murozono Mikio 3, Takakura Hideyuki 1 |
| ’ | 2 | The effects of grain boundary character in spherical Si solar cell | Ritsumeikan Univ. 1, IMR, Tohoku Univ. 2, Clean Venture 21 Co. 3@*Shota Hayashi 1, Takashi Minemoto 1, Noritaka Usami 2, Kazuo Nakajima 2, Mikio Murozono 3, Hideyuki Takakura 1 |
| | 3 | Photoluminescence properties of spherical Si crystals prepared by seeding technique | AIST 1@*Takehiko Nagai 1,Zhengxin Liu 1, Atsushi Masuda 1, and Michio Kondo 1 |
| | 4 | Improvement in the yield of spherical Si by optimizing the seeding technique | National Institute of Advanced Industrial Science & Technology (AIST), Research Center for Photovoltaics@Zhengxin Liu, Takehiko Nagai, Atsushi Masuda, Koichi Asai, Michio Kondo |
| | 5 | Investigation on lifetime measurements of spherical Si | National Institute of Advanced Industrial Science & Technology (AIST), Research Center for Photovoltaics@Zhengxin Liu, Takehiko Nagai, Atsushi Masuda, Michio Kondo |
| | | Break 14:45`15:00 | |
| | 6 | Characterization of a-SiO:H passivation layer for cast-crystalline solar cells | Tokyo Inst. of Tech. @*Yamamoto Hiroshi 1,Otsubo Michio 2,Sugiura Tsutomu 2,Sato Takehiko 4,Yamada Akira 3,Konagai Makoto 2 |
| | 7 | New a-SiN:H/a-SiCN:H passivation structure for cast-crystalline silicon solar cells | Tokyo Inst. of Tech. 1, QNERC 2, Mitsubishi Electric Co., Ltd 3,@*Sugiura Tsutomu 1, Otsubo Michio 1, Sato Takehiko 3, Yamada Akira 2, Konagai Makoto 1 |
| | 8 | Passivation Effct of a-Si:H Film for Crystalline Silicon Substrate | Tokyo University of Agri.& Tech.@*Suzuki Yuji 1,Arifuku Naoki 1,Yoshii Yuichi 1,Dhamrin Marwan 1,Suda Masanori 1,Kamisako Kouichi 1, |
| | 9 | Properties of SiNx:H anti-reflection films and effect of HF treatment | Tokyo Univ. of Agri. & Tech. 1@*Supajariyawichai Piyasak 1, Joen Minsung 1, Kawachi Kazuki 1, Kamisako Koichi 1 |
| | 10 | Optical properties of groove- and honeycomb-textured silicon surfaces using chlorine trifluoride gas | Seikei Univ. 1@Shouhei Narita 1, Hideyuki Sano 1, Tadashi Momma 1, Yoji Saito 1 |
| | 11 | Infrared Semiconductor Laser Crystallization of Silicon Films Using Carbon Particles as Optical Absorption Layer | Hightec Systems 1, Tokyo Univ. of A&T 2@*Sano Naoki 1, Maki Masato 2, Andoh Nobuyuki 2, Sameshima Toshiyuki 2 |
| 12.5 Optoelectric Properties and Devices |
| March 28 9:15`12:00 |
| 28a-ZJ-@/ III |
| | 1 | Single Crystallization of Microwave-Synthesized AgGaSe2 by Bridgman Method (I) | Osaka Pref. College of Technology 1@*Susaki Masami 1, Maeda Atsushi 1 |
| | 2 | Photoluminescence of AgGaSe2 Crystals Grown by Hot-Press Method | Miyazaki Univ. 1, Kyusyu Univ. 2, Ishikawa National Coll. Tech. 3@*Kinoshita Aya 1, Nomoto Keita 1, Yoshino Kenji 1, Ikari Tetsuo 1, Matsuo Hitoshi 2, Kakimoto Koiti 2, Seto Satoru 3 |
| | 3 | Photoluminescence spectra of AgInSe2 | Osaka Prefecture Univ. 1,Miyazaki Univ. 2@*Abe Koji 1,Murakami Go 1,Kinoshita Aya 2,Yoshino Kenji 2,Wakita Kazuki 1 |
| | 4 | Optical properties of compound semiconductor AgGaTe2 | Gunma univ. 1@*Arai Shinya 1,Take Yoshinari 1,Ozaki Syunji 1,Adachi Sadao 1 |
| | 5 | Dependence of Cu/In ratio on CuInS2 by hot-press method | Miyazaki Univ. 1,Miyakono-jyo National Coll. Tech. 2,Kyusyu Univ. 3@*Nomoto Keita 1,Kinoshita aya 1,Shirahata Yasuhiro 1,Akaki Yoji 2,Yoshino Keiji 1,Ikari Tetsuo 1,Yoshitake Tsuyoshi 3. |
| | | Break 10:30`10:45 | |
| | 6 | Effect of H2S annealing for CuInS2 thin films grown by a vacuum evaporation method | Miyakonojo Coll. Tech. 1, Miyazaki Univ. 2, Tsuyama Coll. Tech. 3 @*Yoji Akaki 1, Keita Nomoto 2, Shigeyuki Nakamura 3, Kenji Yoshino 2 |
| | 7 | Characterization of Cu(In,Ga)S2 crystals grown from the melt (II) | Nagaoka National Coll. Technol. 1, Niigata Univ. 2@Yamazaki Makoto 1,Yoneda Kazuhiro 1,Oishi Kouichiro 1, Maruyama Masayuki 1, Yanagisawa Takashi 1, Jimbo Kazuhiro 1, Katagiri Hironori 1, Kobayashi Satoshi 2, Tsuboi Nozomu 2 |
| | 8 | Preparations of CuAlS2 thin films by MOD technique | Kobe City College of Tech.1, Tokyo Univ. of Agri. and Tech.2@*Nishi TaKao1, Tsunazaki Kyosuke1, Sato Katsuaki2 |
| | 9 | Improvement in luminescent characteristics of chalcopyrite phosphor CuAlS2:Mn by Si doping | Tottori Univ. 1,Tokushima Bunri Univ. @*Tsuji Kazuaki 1,Ohmi Koutoku 1,Kobayashi Hiroshi 2 |
| | 10 | Growth of ZnSnP2 crystal by solution method and normal freezing method | Tokyo Univ. of Science 1, Ehime Univ. 2@*T.Minemura 1, K.Miyauchi 1, K.Nakatani 1, M.Sugiyama 1, H.Nakanishi 1, S.Shirakata 2 |
| 12.5 Optoelectric Properties and Devices |
| March 28 9:30`18:30 |
| 28a-ZK-@/ III |
| | 1 | Broadband luminescence from Yb3+, Nd3+ co-doped Bi2O3-B2O3 glass | Nagoya Univ. 1@*Fuchi Shingo 1, Sakano Ayako 1, Takeda Yoshikazu 1 |
| | 2 | New Green Phosphor, TbxMoOy | ICMR 1@Ehara Mami 1, Kishino Takao 1, Takeuchi Yasumasa 1 |
| | 3 | Synthesize and optical of SrO phospher | Chitose Institute of Science and Technology@*Abe Masahiro 1. Yamanaka Akio 1 |
| | 4 | Ga2O3:Mn Phosphor Thin Films | Chitose Inst.@*Honda Masaya 1,Kamada Sino 1,Kawabe Yutaka 1,Yamanaka Akio 1,Hamanaka Kouiti 1 |
| | | Break 10:30`10:45 | |
| | 5 | Luminescent Properties of Y2O3-based Nano-particle phosphors | Ulvac Inc. 1@*Tomohiro Nagata 1, Takahiro Nakayama 1, Naoki Tsukahara 1, Masaaki Hirakawa 1, Hirohiko Murakami 1 |
| | 6 | Effects of ZnO addition on Eu3+ doped Y2O3 phosphors | School of Science and Technology, Kwansei Gakuin Univ. 1, Plagenom Co. Ltd 2@*Nishigaki Kenichi 1, Kurita Atusi 1, Tanaka Masanori 2 |
| ’ | 7 | Preparation and properties of Y2O3:Bi3+, Eu3+ nanophosphors for blacklight (near-UV) excitation | Keio Univ. 1, SINLOHI Co., LTD., 2@Tomoyo AKiyama 1, Tetsuhiko Isobe 1, Seiji Niikura 2 |
| ’ | 8 | Preparation of transparent colloidal solution of YVO4:Bi3+,Eu3+ nanophosphors emitting under the excitation of the black light | Keio Univ. 1, SINLOIHI Co. Ltd. 2@*Takeshita Satoru 1, Isobe Tetsuhiko 1, Niikura Seiji 2 |
| | 9 | Effects of Sc Substitution on Luminance of Y2SiO5:Tb Phosphors | Materials Research Lab., Hitachi Ltd.@*Imamura Shin, Komatsu Masaaki, Shiiki Masatoshi |
| ’ | 10 | Preparation of YAG:Ce3+ Nanophosphors / PMMA Composite Beads with Different Fluorescent Intensities and Application for Detecting Biomolecules | Keio Univ. 1,Shiga Univ. of Medical Science@2, Furukawa Electric CO., LTD.@3@*Ikumi Kusayama 1,Ryo Asakura 1,Daisuke Saito 1,Tetsuhiko Isobe 1,Kiyoshi Kurokawa 2,Hideki Aizawa 3,Tomohiro Takagi 3,Yosuke Hirayama 3,Michio Ohkubo 3 |
| ’ | 11 | Preparation and Characterization of MPS-coated YAG:Ce3+ Nanophosphors for Bio-Labelling | Keio Univ. 1@Tsukamoto Atsushi 1, Isobe Tetsuhiko 1 |
| | 12 | Triboluminescent characterization of mechanoluminescent SrAl2O4:Eu2+ film | AIST@*Yamada Hiroshi 1, Fu Xiaoyan 1, Xu Chaonan 1 |
| | | Lunch 12:45`13:45 | |
| 28p-ZK-@/ III |
| | 1 | Luminescent Characteristics of M3Gd2B4O12:Tb3+(M=Ca, Sr, Ba) Green PDP Phosphors | Tottori Univ. 1,Tokushima Bunri Univ. 2@*Nakashima Yasuhiro 1,Kunimoto Takashi 2,Yamane Akira 1,Orita shinya 1,Ohmi Koutoku 1,Kobayashi Hiroshi 2 |
| | 2 | Preparation and Luminescent Characteristics of CaLa2B10O19:Tb3+ Green PDP Phosphor | Tottori Univ. 1, Tokushima Bunri Univ. 2@*Orita Shinya 1,Kunimoto Takashi 2,Yamane Akira 1,Nakashima Yasuhiro 1, Ohmi Koutoku 1,Kobayashi Hiroshi 2 |
| | 3 | The concentration dependency of Eu ions for excitation spectra of BaMgAl10O17:Eu by using the SOR light source | Kwansei Gakuin Univ. 1, NEC Lighting 2, Tokyo Univ. Tech. 3@*Yoshida Hisashi 1,2, Toyoshima Hiroaki 2, Watanabe Shinta 1, Ogasawara Kazuyoshi 1, Yamamoto Hajime 3 |
| | 4 | First-principles-calculations of 4f-5d optical absorption spectra in BaMgAl10O17:Eu | Kwansei Gakuin Univ. 1, NEC Lighting 2, Tokyo Univ. Tech. 3@*Yoshida Hisashi 1,2, Toyoshima Hiroaki 2, Watanabe Shinta 1, Ogasawara Kazuyoshi 1, Yamamoto Hajime 3 |
| ’ | 5 | Low-temperature Fabrication of Phosphor Oxide Thin Film by Excimer Laser Assisted Metal Organic Deposition | AIST 1@*Tomohiko Nakajima 1,Tetsuo Tsuchiya 1,Toshiya Kumagai 1 |
| | | Break 15:00`15:15 | |
| | 6 | Red shift of PL peak wavelength from a-Si:H Nanoball Films using Hydrogen Plasma | Waseda Univ 1@*Sanada Hiroshi 1,Miyakawa Keisuke 1,Onodera Makoto 1,Sakamoto Hajime 1,Kato Isamu 1 |
| | 7 | Preparation and characterization of porous silicon formed in HF/K2Cr2O7 mixed solution | Gunma Univ. 1@*Hoshino daisuke 1, Satou Naonori 1, Adachi Sadao 1 |
| | 8 | Characterization of Thermal Properties for Porous Silicon using Photoacoustic Technique |
Dept. Appl. Phys. & Chem., the Univ. Electro-Commun.
1, Course of Coherent Opt. Sci., the Univ. Electro-Commun. 2, @Kato Yushi
1, *Shen Qing 1,2, Toyoda Taro 1,2 |
| | 9 | Photoconductive Properties of Self-Assembled Nanocrystalline Silicon Films | Tokyo Univ A&T.1,NHKLabs.2@Okoamoto kenta 1,K0osida Nobuyosi 1,Hirano Yosiyuki 2 |
| | 10 | Luminescence Characteristics of Nanocrystalline Silicon Prepared by Ion Implantation | Graduate School of Eng., Tokyo Univ. Agri. & Tech. 1@*Takeuchi Akira 1, Koshida Nobuyoshi 1 |
| £ | 11 | Blue and red emission in nanocrystalline porous silicon treated by high-pressure water vapor annealing | Tokyo University of Agriculture and Technology@1@*Gelloz Bernard 1, Koshida Nobuyoshi 1 |
| ’ | 12 | Phased Operation of Two-Dimensionally Arrayed Nanocrystalline Silicon Ultrasonic Emitters | Graduate School of Eng., Tokyo Univ. Agri. & Tech.@*Sugawara Masato 1,Koshida Nobuyoshi 1 |
| | 13 | Generation of singlet oxygen by energy transferfrom surface modified porous Si to oxygen molecules | Faculty of Eng. 1, TheGraduate School of Sci. and Tec. 2, Kobe Univ.@*Nojiri Masato 1, Fumon Hirokazu 2, Fujii Minoru 1, Hayashi shinji 1,2 |
| ’ | 14 | The stabilization of photoluminescence for surface passivated nanocrystalline silicon particles | Tokyo Denki Univ, 1@*Hiruoka Masaki 1,Sato Keisuke 1,Hirakuri Kenji 1 |
| ’ | 15 | Toxicity evaluation and in vivo test of nanocrystalline silicon particles | Tokyo Denki Univ. 1, Sapporo Medical Univ. 2@*Sato Keisuke 1, Hirakuri Kenji 1, Funakubo Akio 1, Fukui Yasuhiro 1, Higami Tetsuya 2 |
| | 16 | Fabrication and luminescence property of silicon nanowires | UEC@*Oishi Tetsuji 1, Okuno Tsuyoshi 1 |
| | 17 | SPM cleaning effect on porous silicon formation by photoetching | Gunma Univ. 1@*Tomioka Seigo 1,Adachi Sadao 1,Miyazaki Takayuki 1 |
| | 18 | Observation of Strong Blue Light Emission from Si Nanocrystal Produced by Ion Implantation and Annealing | Gunma Univ. 1,JAEA 2@Kenta Miura 1,Takeshi Tanemura 1,Osamu Hanaizumi 1,Shunya Yamamoto 2,Katsuyoshi Takano 2,Masaki Sugimoto 2,Masahito Yoshikawa 2 |
| 12.5 Optoelectric Properties and Devices |
| March 29 9:30`11:45 |
| 29a-ZK-@/ III |
| | 1 | INFRARED EMISSION CHARACTERISTICS OF CaAlSiN3:Yb PHOSPHORS |
Tokyo Univ. Technology 1, Mitsubishi Chem. STRC
2 @Yoh Mita, Takuya Nakajima, Yoshinobu Miyamoto, Hajima Yamamoto and Kyouta
Ueda1 Tokyo University of Technology 2 Mitsubishi Chem. STRC |
| | 2 | Thermoluminescence properties of Eu2+-doped calcium silicon nitride phosphors | Tokyo Univ. of Tech. 1@*Hikaru Kato 1,Kouji Tamura 1,Ryouhei Tsukuda 1,Naohisa Narimatsu 1,Hajime Yamamoto 1 |
| | 3 | Long-persistant Luminescence Mechanism of Ca2Si5N8:Eu2+,Tm | Tokyo Univ. of Tech. 1@*Yoshinobu Miyamoto 1, Hikaru Kato 1, Kouji Tamura 1, Ryouhei Tsukuda 1, Naohisa Narimatsu 1, Hajime Yamamoto 1 |
| | 4 | Photoluminescence spectra of CaGa2S4 compounds doubly doped with Eu and Nd | Nihon Univ. 1@*Hidaka Chiharu 1, Takizawa Takeo 1 |
| | | Break 10:30`10:45 | |
| | 5 | Mechanism of laser annealing of SrGa2S4:Eu thin film phosphors deposited by two-electron beam evaporation | Res.Inst.of Electron., Shizuoka Univ. 1, JSW 2, Aichi Univ. of Technol. 3@*Kominami Hiroko 1, Harakawa Takashi 1, Seino Toshiaki 2, Arai Yuko 2, Aoki Toru 1, Hara Kazuhiko 1, Nakanishi Yoichiro 1, Hatanaka Yoshinori 3 |
| | 6 | Quantum cutting through downconversion in Cs2F7:Er3+,Tb3+ upon 4f-5d excitation and its dynamical behabior | Akita Univ.@*Hiroki Matsuoka 1,Tomoyuki Watanabe 1,Nobuhiro Kodama 1 |
| | 7 | Visible quantum cutting through downconversion in green-emitting Tb3+-doped alkali gadolinium fluoride phosphors | Akita Univ.1.@*Tomoyuki Watanabe 1,Tomoko Takahashi 1,Nobuhiro Kodama 1 |
| | 8 | Synthesis and photoluminescence properties of Ce, Tb co-doped oxynitride La10(Si6O22N2)O2 with apatite structure | Kyushu Institute of Technology@Maeda Tsuyoshi 1, Nakamura Fukutsuna 1, Ueda Kazushige 1 |
| 12.5 Optoelectric Properties and Devices |
| March 29 9:30`12:05 |
| 29a-ZN-@/ III |
| | 1 |
"Outstanding Achievement Award" World
of Thin Film Semiconductor Devices |
Center for Intellectual Property Strategies, RIKEN@*
Eiichi Maruyama |
| | | Break 10:20`10:35 | |
| | 2 | A Theoretical Study on Effects of Defects on Eu Site and Electronic Structures in Blue Phosphor BaMgAl10O17:Eu2+ |
Dept. Appl. Chem., Tohoku Univ. 1, JST-PRESTO 2,
NICHe, Tohoku Univ. 3@*Hiroaki Onuma 1, Kei Ogiya 1, Hideyuki Tsuboi 1,
Michihisa Koyama 1, Nozomu Hatakeyama1, Akira Endou 1, Hiromitsu Takaba
1, Momoji Kubo 1, 2, Carlos A. Del Carpio 1, Akira Miyamoto 1, 3 |
| | 3 | New Red Phosphors for a white LED | Niigata Univ.@*Toda Kenji, Seki Satomi, Kousaka Shin-ichiro, Kawakami Yoshitaka, Uematsu Kazuyoshi, Sato Mineo |
| £ | 4 | White LED with high CRI using sialon phosphors | Natl.Inst.Mater.Sci. 1,Fujikura Ltd. 2@Rong-Jun Xie 1, Naoto Hirosaki 1, Naoki Kimura 2, Ken Sakuma 2 |
| £ | 5 | Structural and luminescence properties of rare-earth doped Ώ-silicon nitride | NIMS@Y.Q. Li, N. Hirosaki, R.J. Xie and M. Mitomo |
| | 6 | Synthesis and Luminescence Properties of Blue Nitride Phosphor | NIMS@*Kazuo Inoue, Naoto Hirosaki, Rong-Jun Xie, Takashi Sekiguchi, Benjamin Dierre |
| | 7 | Luminescence property and structure of CaAlSiN3:Eu partially substituted with Si2N2O | Mitsubishi Chem. STRC 1, NIMS 2@Seto Takatoshi 1, Hirosaki Naoto 2, Kijima Naoto 1, Imura Hiroyuki 1 |
| 12.5 Optoelectric Properties and Devices |
| March 29 9:00`18:00 |
| 29a-ZW-@/ III |
| | 1 | Fabrication of SnO2 thin films by the electrochemical deposition method | Nagoya Inst. of Tech. 1@Wang Jun 1, Ichimura Masaya 1 |
| | 2 | Preparation of ZnO/SnS heterojunction diodes by the electro chemical deposition (ECD) method | Nagoya Inst. of Tech. 1@Takagi Hiroshi 1, *Ichimura Masaya 1 |
| | 3 | Composition dependence of properties of Cu2ZnSnS4 thin film fabricated by co-evaporation | Saga Univ. 1@Keisuke Ikari 1,Daisuke Kawasaki 1,*Tooru Tanaka 1,Mitsuhiro Nishio 1,Qixin Guo 1,Hiroshi Ogawa 1 |
| | 4 | Sulfurization of Cu2ZnSnS4 Thin Films Prepared by Photochemical Deposition. | Nagaoka Univ. of Tech.@Moriya Katsuhiko 1, Tanaka Kunihiko 1, Uchiki Hisao 1 |
| | 5 | Optical properties of Cu22ZnSnS4 bulk single crystals and thin films deposited by sol-gel and sulfurization method | Nagaoka Univ. of Tech.@*Yusuke Miyamoto 1,Kunihiko Tanaka 1,Masatoshi Oonuki 1,Noriko Moritake 1,Hisao Uchiki 1 |
| | | Break 10:15`10:30 | |
| | 6 | Pre-anneal effects of CZTS thin films deposited by sol-gelEsulfurizing method | Nagaoka Univ. of Technology 1@*Kunihiko Tanaka 1, Noriko Moritake 1, Masatoshi Oonuki 1, Hisao Uchiki 1 |
| | 7 | Non-vacuum processing of Cu2ZnSnS4 thin film solar cell | Nagaoka Univ.@*Oonuki Masatoshi, Moritake Noriko, Tanaka Kunihiko, Uchiki Hisao |
| | 8 | Preparation of Cu2ZnSnS4 thin films and their solar cells by sulferization | Wakayama Coll. Tech. 1,Wakayama Ind. Tech. Cen. 2@*Yamaguchi Toshiyuki 1,Maeda Kazuya 1,Wakano Ken-ichiro 1,Niiyama Shigetoshi 2,Imanishi Toshihito 2,Yamashita Munenori 2 |
| | 9 | Growth of Cu2ZnSnS4 thin film in vacuum-sealed ampule | Nagano National Coll. of Tech. 1, Shinshu Univ. 2@*Noritaka Momose 1,2, Toshiro Shimada 2, Yoshio Hashimoto 2, Kentaro Ito 2 |
| | 10 | Effect of KCN treatment on Cu2ZnSnS4 thin film solar cell | Shinshu Univ.1, Nagano National Coll. of Tech.2@*Toshiro Shimada 1, Noritaka Momose 1,2, Yoshio Hashimoto 1, Kentaro Ito 1 |
| | 11 | Preparation and Characterization of ZnS Thin Films for the Buffer Layer of CIGS solar cells prepared by CBD Technique (II) | Tokyo University of Science@*Iwashita taisuke 1,ando shizutoshi 1 |
| | | Lunch 12:00`13:00 | |
| 29p-ZW-@/ III |
| | 1 | Zn doping in CIS films by thermal annealing using dimethylzinc | Tokyo Univ. of Science 1,Univ. of Tsukuba 2@@*A.Miyama 1,A.Kinoshita 1,H.Nakanishi 1,M.Sugiyama 1,S.F.Chichibu 2 |
| | 2 | Growth of Cu(In,Ga)Se2 thin films by selenization using diethylselenide (III) | Tokyo Univ. of Science 1,Flee State Univ. 2,Univ. of Tsukuba 3@Yasuniwa Toshihiro 1,Francis B Dejene 2,Kinoshita Atsuki 1,Nakanishi Hisayuki 1,Sugiyama Mutsumi 1,Chichibu Shigefusa 3 |
| | 3 | Fabrication of Cu(In,Ga)Se2 Thin-films Using Electrodeposited CuGaSe2/CuInSe2 Bilayers | Ritsumeikan Univ. 1@*Oda Yusuke 1, Souma Rika 1, Minemoto Takashi 1, Takakura Hideyuki 1 |
| | 4 | Study of annealing effect on electrical properties of Cu(In,Ga)Se2 thin films | Univ. of Tsukuba 1, AIST 2@*Nobuhiro Ishida 1, Takeaki Sakurai 1, Shogo Ishizuka 2, Monirul Islam 1, Yuki Kasai 1 ,Koji Matsubara 2, Keiichiro Sakurai 2, Akimasa Yamada 2, Katsuhiro Akimoto 1, Shigeru Niki 2 |
| | 5 | Characterization of CIGS solar cells by time-resolved photoluminescence method (II) | Ehime Univ. 1, Aoyama Gakuin Univ. 2@Shirakata Sho 1, Ohkubo Katsuhiko 1, Goto Hiroyuki 1, Akira Miyata 1, Yasuyuki Ishii 2, Tokio Nakada 2 |
| ’ | 6 | Characterization of Cu(In,Ga)Se2 Solar Cells by PL Imaging | ISAS/JAXA 1,Soken Univ. 2,Tokyo Univ. 3,ISTA/JAXA 4,AIST 5@*Yoshida Kazuki 1,2,Sugimoto Hiroki 1,3,Tajima Michio 1,Kawakita Shirou 4,Niki Shigeru 5,Sakurai Keiichirou 5,Sone Yoshitsugu 1,2 |
| | 7 | In-situ Characterization of Composition and Electronic State of as-grown Surface of In-rich CIGS Films |
Kagoshima Univ. 1, AIST 2@*Teshima Shimpei 1, Kashiwabara
Hirotake 1, Hayase Yohei 1, Masamato Keimei 1, Odahara Yohsuke 1, Obara
Kozo 1, Okuda tetsuji 1, Sakurai keiichiro 2, Yamada Akimasa 2, Ishizuka
Shogo 2, Matsubara Koji 2,Niki Shigeru 2, Terada Norio 1,2 |
| | 8 | Characterization of Electronic Structure and Chemical Bond Nature of CdS/Ga-rich CIGS Interfaces |
Kagoshima Univ. 1, AIST 2@*Teshima Shimpei 1, Kashiwabara
Hirotake 1, Hayase Yohei 1, Masamato Keimei 1, Odahara Yohsuke 1, Obara
Kozo 1, Okuda tetsuji 1, Sakurai keiichiro 2,Yamada Akimasa 2, Ishizuka
Shogo 2, Matsubara Koji 2,Niki Shigeru 2, Terada Norio 1,2 |
| | 9 | Characterization of Interface-, Grain Boundary-Electronic Structure of Chalcogenide-based Solar Cells | Kagoshima Univ. 1,AIST 2@*Masamoto Keimei 1,Hayase Yohei 1,Kashiwabara Hirotake 1, Teshima Shimpei 1, Takeshita Kazunori 1, Obara Kozo 1, Okuda Tetsuzi 1, Sakurai Keiichiro 2, Yamada Akimasa 2, Ishizuka Shogo 2 |
| | | Break 15:15`15:30 | |
| ’ | 10 | Preparation of Cu(In1-xGax)Se2 thin films using a Se-radical beam source and solar cell performance | AIST RCPV 1, AIST NeRI 2@Ishizuka Shogo 1, Shibata Hajime 2, Yamada Akimasa 1, Sakurai Keiichiro 1, Matsubara Koji 1, Niki Shigeru 1 |
| | 11 | CIGS solar cells using ZnO back contact layers (II) | Tokyo Univ. of science 1, AIST 2@*Yonemura Minoru 1, Sakurai Keiichiro 2, Ishizuka Syogo 2, Matsubara Koji 2, Yamada Akimasa 2, Niki Shigeru 2, Sugiyama Mutsumi 1, Nakanishi Hisayuki 1 |
| ’ | 12 | High-Mobility ITiO Transparent Conductive Thin Films by Sputtering/Post Annealing Technique. | Aoyama Univ@*Ryota Hashimoto, Yosuke Kanda, Hiroki Ishizaki, Tokio Nakada |
| | 13 | Bifacial CIGS Thin Film Solar Cells Using High Mobility ITiO Back Contacts | Aoyamagakuin Univ. 1@*Miyano Tetsuo 1,Kanda Yosuke 1,Hashimoto Ryota 1,Ishizaki Hiroki 1,Nakada Tokio 1 |
| ’ | 14 | High Quality CIGS Thin Films and Devices by Photo-Excited Deposition Process | Aoyama Gakuin Univ. 1@*Ishii Yasuyuki 1,Hirata Junya 1,Nakada Tokio1 |
| ’ | 15 | Improved Efficiency of AIGS/CIGS Tandem Thin Film Solar Cells | Aoyama Gakuin Univ.1@*Morimoto Takuya 1,Kijima Shunsuke 1,Kuromiya Yasuhito 1,Nakada Tokio 1 |
| ’ | 16 | Effect of Hetero Junction Properties of Cu(In,Ga)Se2 Solar Cell | Ritsumeikan Univ. 1@*Tanaka Kiyoteru 1,Minemoto Takashi 1,Takakura Hideyuki 1 |
| ’ | 17 | CuInSe Thin-film Solar Cell Prepared on Polyimide Film. | Ritsumeikan Univ. 1@*Nomura Keita 1, Minemoto Takashi 1, Takakura Hideyuki 1 |
| | 18 | Suitable transparent front contact thickness and tolerable cell depth for thin film solar cell modules | AIST 1, Univ. Tsukuba 2, TUS 3@*Yamada Akimasa 1, M. M. Islam M. Muhammad 2, Yonemura Minoru 3, Matsubara Koji 1, Ishizuka Shogo 1, Sakurai Keiichiro 1, Tampo Hitoshi 1, Shibata Hajime 1, Niki Shigeru 1 |
| ’ | 19 | Electrical Properties of TiO2@Electrode for Dye-sensitized Solar Cells Using Tight-Binding Quantum Chemical Molecular Dynamics |
Dept. Appl. Chem., Tohoku Univ. 1, JST-PRESTO 2,
NICHe, Tohoku Univ. 3 @*Ogiya Kei 1, Lv Chen 1, Govindasamy Agalya 1, Tsuboi
Hideyuki 1, Koyama Michihisa 1, Hatakeyama Nozomu 1, Endou Akira 1, Takaba
Hiromitsu 1, Kubo Momoji 1,2, Del Carpio A. Carlos 1, Miyamoto Akira 1,3
|
| 12.5 Optoelectric Properties and Devices |
| March 30 9:00`15:00 |
| 30a-ZN-@/ III |
| | 1 | Development of FP-TV using inorganic EL technologies |
Sanyo Electric DS Res. Center 1, iFire Corp. Technology
2, Dai Nippon Printing R&D Center 3@*Hiroki Hamada 1, Koichi Wani 2, Masaki
Kutsukake 3 |
| | 2 | TFEL Devices Employing Spin-Coated (Ba,Sr)TiO3 Films as 1st and 2nd Insulating Layers (II) | Tottori Univ.1,Tokushima Bunri Univ.2@*Kotani Tsuyoshi 1,Yamasaki Michihiro 1,Ouchi Yukari 1,Ohashi Takayuki 1,Ohmi Koutoku 1,Kobayashi Hiroshi 2 |
| | 3 | Blue-Emitting BaAl2O4-Based Multicomponent Oxide TFEL Devices Fabricated Using a Combinatorial Sputtering Deposition | OEDS R&D Center, Kanazawa I.T.@*Haruki Fukada 1,Shun Matsui 1, Toshihiro Miyata 1, Tadatsugu Minami 1 |
| | | Break 10:00`10:15 | |
| | 4 | PL and EL from CaAl2O4:Eu Thin Films Prepared by Magnetron Sputtering | OEDS R&D Center, Kanazawa I.T.@*Haruki Fukada 1, Syun Matsui 1, Toshihiro Miyata 1, Tadatsugu Minami 1 |
| | 5 | PL and EL from Silicate-Based Multicomponent Oxide Thin Films Prepared by Magnetron Sputtering | OEDS R&D Center, Kanazawa I.T.@*Toshihiro Miyata 1, Haruki Fukada 1, Kenji Okada 1, Tadatsugu Minami 1 |
| | 6 | Zinc Gallate-Based Multicomponent Oxide TFEL Devices Fabricated Using a Combinatorial Sputtering Deposition Method | OEDS R&D Center, Kanazawa I.T.@*Shun Matsui 1, Haruki Fukada 1, Toshihiro Miyata 1, Tadatsugu Minami 1 |
| | 7 | Characteristics of AlGaN;Eu Electroluminescent devices | Toyohashi Univ. Tech. 1, JAEA 2 @*Oikawa Fumitake 1, Wakahara Akihiro 1, Okada Hiroshi 1, Takemoto Kazumasa 1,Ohshima Takeshi 2, Itoh Hisayoshi 2 |
| | 8 | Effect of co-activator of Ultraviolet Emitting Aln:Gd Thin-Film Electroluminescent Devices | Grad.School of Eng. Science,Osaka Univ@*Niioka Yasumasa,Ota Jun,Adachi Daisuke,Toyama Toshihiko,Okamoto Hiroaki |
| | 9 | Electroluminescent Devices utilizing ZnS:Mn nanocrystals prepared by solution-phase synthesis method | Grad. School of Eng. Schience, Osaka Univ.@*Hama Takeshi 1,Morimoto Takuma 1,Adachi Daisuke 1,Toyama Toshihiko 1,Okamoto Hiroaki 1 |
| | | Lunch 11:45`13:00 | |
| 30p-ZN-@/ III |
| | 1 | Red-emitting Ba2ZnS3:Mn thin film electroluminescence devices(IV) | Tottori Univ. 1,Tokushima Bunri Univ. 2@*Ohashi Takayuki 1,Sasaki Taichi 1,Ohmi Koutoku 1,Kobayashi Hiroshi 2 |
| | 2 | Formation mechanism of impurity phase in red-emitting@Ba2ZnS3:Mn EL phosphors | Tottori Univ. 1,JASRI 2,Mitsui Mining and Smelting Co.,Ltd. 3,Tokushima Bunri Univ. 4@*Sasaki Taichi 1,Ohashi Takayuki1,Ohmi Koutoku 1,Honma Tetsuo 2,Sasakura Asuka 3,Kobayashi Hiroshi 4 |
| | 3 | Electroluminescence from ZnS D-A Pair Type Phosphors Doped with III-V Compounds (2) | Meiji Univ. 1@*Takeyasu Yuji 1,Miura Noboru 1,Matsumoto Hironaga 1,Nakano Ryotaro 1 |
| | 4 | Band diagram and 1.15um EL of an Er-doped n-ZnO/p-Si Light Emitting Diode. | Tokyo Univ. of Sci. 1, Toyo Univ. 2@*Ide Kazutaka 1, Harako Susumu 1, Abe Junichi 1, Fukasawa Shinichiro 1, Monma Kaori 1, Tsukahara Hajime 1, Komuro Syuji 2, Zhao Xinwei 1 |
| ’ | 5 | Preparation of ternary compounds phosphor nanoparticles by the ball-milling method | Waseda Univ. , Lab.for Mat.Sci.&Tech. 1@*Hamaguchi Sayako 1,Kobayashi Masakazu1 |
| ’ | 6 | Photoluminescence lifetime of high luminescent CdSe/ZnS/TOPO nanocrystals: their environmental dependence | Tokyo Univ. of Agricul. & Tech., SRI for Future Nano-Sci. & Tech.@1, Dep. of Appl. Phys.@2@*Masaru Oda 1,2, Ken Nishiura 2, Naohisa Andou 2, Akira Nishiyama 2, Giichi Marumo 2, Toshiro Tani 1,2 |
| | 7 | Luminescent properties of ZnS:Ce,MIII phosphors | NHK Sci. & Tech. Res. Labs. 1,Tokyo Denki Univ. 2@*Okamoto Shinji 1, Fukui Yoshie 2, Miyamoto Noriyuki 2, Tanaka Katsu 1 and Suzuki Takeo 2 |
| | 8 | Deposition of blue and green emitting ZnS:Cu,Cl phosphor thin films | Tottori Univ.1,Tokushimabunri Univ.2@*Sakai Yuichiro 1,Morikami Daisuke 1,Kasai Hiroshi 1,Ichino Kunio 1,Ohmi Koutoku 1,Kobayashi Hiroshi 2 |
| 12.5 Optoelectric Properties and Devices |
| March 30 10:00`14:45 |
| 30a-ZW-@/ III |
| | 1 | Time resolved photoluminescence of Far-UV band in hexagonal boron nitride | NIMS 1@Watanabe Kenji 1,Taniguchi Takashi 1,Tsuda Osamu 1,Kuroda Takashi 1,Kanda Hisao 1 |
| | 2 | Investigation of photoluminescence properties of Eu-doped GaN films by RF magnetron sputtering | Ehime Univ. 1@Shinji Yudate, Tomoyuki Takechi, Akira Miyata, Sho Shirakata |
| | 3 | Photoluminescence and excitation mechanisms of Nd-doped Si thin films grown by laser ablation | AIST 1, Toyo Univ. 2@*Shinji Kawai 1, Shuji Komuro 2, Tooru Katsumata 2 |
| | 4 | Er-Si-O crystalline films formed by Pulsed Laser Deposition (II) | Univ. of Electro-Communications 1,@*Takanobu Shimohata 1,Yasuhito Tanaka 1,Hideo Isshiki 1,Tadamasa Kimura 1 |
| | 5 | Measurement temperature dependence of Er-related PL intensity in Er,O-codoped GaAs | Osaka Univ. 1, CASI-VBL Osaka Univ. 2@*Fujita Asafumi 1, Tokuno Takehiro 1, Hidaka Keiji 1, Fujii Kei 1, Tachibana Kousuke 1, Ichida Hideki 2, Terai Yoshikazu 1, Kanematsu Yasuo 2, Fujiwara Yasufumi 1 |
| | 6 | Pump-probe transmission study on energy transfer process in Er,O-codoped GaAs | Osaka Univ. 1@*S. Takemoto 1, K. Shimada 1, K. Hidaka 1, Y. Terai 1, M. Tonouchi 1, Y.Fujiwara 1 |
| | 7 | Photoluminescent property of sintered porous silica doped with rare metal ions and sensitizer under VUV excaitation | AIST 1, Kyoto Inst. Tech.2 @Tomoko Akai 1, Wei Liu 1, Masaki Murakami 1, Isao Miyano 1, Masaru Yamashita 1, Kohei Kadono 2 |
| | | Lunch 11:45`12:45 | |
| 30p-ZW-@/ III |
| ’ | 1 | Development of Multi-Scale Light Emitting Device Simulator and Its Application to GaN Light Emitting Diode | Semiconductor Energy Lab. 1, Dept. Appl. Chem., Tohoku Univ. 2, JST-PRESTO. 3, NICHe, Tohoku Univ. 4@Hideto Suzuki 1, 2, Hideyuki Tsuboi 2, Michihisa Koyama 2, Nozomu Hatakeyama 2, Akira Endou 2, Hiromitsu Takaba 2, Momoji Kubo 2, 3, Carlos A. Del Carpio 2, Akira Miyamoto 2, 4 |
| | 2 | Synthesis and characterization of Ge-doped GaN crystalline powder with high luminescence efficiency by simultaneous carbothermal reduction and nitridation of Ga2O3 and GeO2 | Hokkaido Univ. 1, NIMS 2, Horiba, Ltd. 3, Sumitomo Seika Co. 4, @Akira Miura 1, Yoko Miura 1, Shiro Shimada 1, Takashi Sekiguchi 2, Masaaki Yokoyama 3, Bunsho Mizobuchi 4 |
| | 3 | Fabrication and alignment of ZnO microstructures | UEC 1@*Ebisawa Katsuyuki 1, Sugimoto Hideo 1, Okuno Tsuyoshi 1 |
| £ | 4 | Effect of concentration on energy transfer between CdSe quantum dots in colloidal system | Konan Univ.QNL.1, Konan Univ. Dept of Phys.2@*Wei Lu 1, Ikurou Umezu 1.2, Akira Sugimura 1.2 |
| | 5 | Evaluation of semiconductor hetero-interfaces by internal photoemission method | Toyohashi Univ. of Tech.1, Osaka Univ.2@Taniguchi@Koichi1, Awazu@Kunio2, Horiike@Hiroshi2, Nishi@Kazuhisa1 |
| | 6 | Effects of plural states excitation for nonlinear optical response of weakly confined excitons | Kobe Univ. 1, The Univ. of Tokushima 2, NiCT 3, CREST-JST 4@*Osamu Kojima 1,3,4, Toshiro Isu 2,3,4, Junko Ishi-Hayase 3,4, Masahide Sasaki 3, Masahiro Tsuchiya 3,4 |
| | 7 | Optical response of weakly confined exitons in GaAs thin films | NiCT 1, CREST-JST 2, The Univ. of Tokushima 3, Kobe Univ. 4@*Atsushi Kanno 12, Toshiro Isu 123, Osamu Kojima 124, Junko Ishi-Hayase 12, Masahide Sasaki 1, Masahiro Tsuchiya 12 |
| ’ | 8 | Polarization effects of the excitation light source on photoluminescence spectra of InGaAs/InP quantum well structures | Japan Women's Univ. 1@*Motomura Asako 1,Imai Hajime 1 |