6 This Films·Surfaces
6.1 Ferroelectric Films
September 4 10:00〜17:45
4a-ZL-　/ II
	1	Microstructure Control of BaTiO3–based Thin Films by Sintering Conditions	AIST　Kiyotaka Tanaka, Kazuyuki Suzuki, Kazumi Kato
	2	Preparation of Ba1-xSrxTiO3 dielectric films by the electrophoretic deposition method with fine powder	Tokyo Univ. of Science 1 MMS 2　Idemoto Yasushi 1, *Hoshino Masahiko 1,Naoto Kitamura 1,Abe Naohiko 2
▲	3	Relaxorlike dielectric behavior and universal relaxation law in (Ba,Sr)TiO3 thin films	Stanford Univ. 1, Fujitsu Ltd. 2　*Ricardo J. Zednik 1, Paul C. McIntyre 1, John D. Baniecki 2, Masatoshi Ishii 2, Kazuaki Kurihara 2, Kazunori Yamanaka 2
	4	Effect of bottom electrodes on Schottky barrier in metal-insulator-metal thin film capacitors	Kanazawa Univ. 1, Ishikawa Inst. 2　*Kim Taeyoung 1, Kawasaki Kentaro 1, Kawae Takesi 1, Morimoto Akiharu 1, Kumeda Minoru 1, Yamada Satoru 2
	5	Preparation of Ba(Ti,Zr)O3 Thin Films by MOD Method for Application to Infrared Sensor	TRI of Osaka Pref. 1, Kyoto Inst. Tech. 2, Osaka Univ. 3　*Shuichi Murakami 1, Daniel Popovici 3, Mayumi Uno 1, Kazuo Satoh 1, Minoru Noda 2, Masanori Okuyama 3
	6	Investigation of liquid source to form HfO2 Films by FS-CVD	Doshisha Univ. Dept. of Mech. Eng. 1, HORIBA,Ltd. 2, Kyusyu Inst. of Tech. Univ. 3 　*Oshima Motohiro 1, Kimura Daiichiro 1, Tsuchida Tomoya 1, Terasaka Masanori 2, Tominaga Koji 2, Yamagishi Yutaka 2, Nakao Motoi 3, Senda Jiro 1, Ishida Kozo 2
		Break 11:30〜11:45
	7	Structural and Ferroelectric Properties of c-axis oriented (Ba,Sr)2NaNb5O15 Thin Films	Tokyo University of Science　*Suzuki Yuko 1, Higuchi Toru 1, Yamasaki Taro 1, Hattori Takesi 1, Tsukamoto Takeyo 1
△	8	Structural and dielectric properties of layered double-perovskite La2CuSnO6 thin films	Kyoto Univ. 1,JASRI/SPring-8 2　*Komatsu Hiroshi 1,Haruta Mitsutaka 1,Kan Daisuke 1,Kurata Hiroki 1,Isoda Seiji 1,Sakata Osami 2,Kimura Shigeru 2,Shimakawa Yuichi 1
	9	High Frequency Operation of Ferroelectric Capacitors with P(VDF-TrFE) Copolymer films	Tokyo Tech., Hitachi CRL　*Fujisaki Sumiko 1, Ishiwara Hiroshi 1, Fujisaki Yoshihisa 2
▲	10	Ferroelectric Characteristics of Patterned p(VDF-TrFE) Thin Films	Tokyo Inst. of Tech. IGSSE 1.　Yoon joowon 1, Hiroshi Ishiwara 1
	11	Characterization of ferroelectric polymer films with phosphor particles	Kanazawa Inst. Tech., OEDS R&D Center 1, Graduate School 2　*Koji Aizawa 1, Yusuke Ohtani 2
		Lunch 13:00〜14:00
4p-ZL-　/ II
▲	1	Threshold voltages and their distribution of Pt/SrBi2Ta2O9/Hf-Al-O/Si FeFETs	Ntl. Inst. Adv. Ind. Sci & Technol (AIST)　*Li Qiuhong 1, Horiuchi Takeshi 1, Wang Shouyu 1, Furihata Youko1, Yun Kwi Young 1, Wang Chunchang 1, Takahashi Mitsue, Sakai Shigeki 1
	2	Improvement in Nondestructive Readout of Integrated Ferroelectric Gate FET Memory with an Intermediate Electrode	Jpn. Adv. Inst. of Sci. and Tech. 1　*Susumu Horita 1, Bui Nguyen Quoc Trinh 1, Kensuke Nishioka 1
	3	Application of low dielectricBi2W0.9Mn0.1O6 thin films to MFIS devices	Tokyo Institute of Technology IGSSE 1,Fujitsu laboratories Ltd 2　Okazawa Kou 1,Maruyama Kenji 2,Ishiwara Hiroshi 1
▲	4	Electrical Properties of Metal-ferroelectric-Insulator-Silicon using HfTaO as Buffer Layer	1 Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology 2 Fujitsu Laboratories Ltd 　Xubing Lu 1 Hiromasa Hoko 2 Kenji Maruyama 2 Hiroshi Ishiwara 1
	5	Write disturb of NAND-type FeRAM circuit based on MSIF-FET	Tokyo Inst. of Tech. IGSSE 1, Fujitsu Labs 2 　Ikeda Taketsugu 1, Tabuchi Yosiaki 1, Tamura Tetsuro 2, Hoko Hiromasa 2, Arimoto Yoshihiro 2, Ishiwara Hiroshi 1
	6	Electrical characteristics of 2T-type FeRAM cells composed of p-channel MFIS-FET and n-channel MOSFET	Fujitsu Laboratories Ltd. 1, Tokyo Institute of Technology IGSSE 2　*Hoko Hiromasa 1, Li Yuegang 2, Maruyama Kenji 1, Ishiwara Hiroshi 2
	7	Disturb characterization for 2T MFISFET memory II	Tokyo Inst of Tech.IGSSE 1,Fujitsu Lab 2　*Y. Li 1,K. Maruyama 2,H.Hoko 2,Y.Arimoto 2,H.Ishiwara 1
		Break 15:45〜16:00
	8	Microstructure and dielectric property of (Y,Yb)MnO3 films prepared by chemical solution deposition	AIST 1　Suzuki Kazuyuki 1, Kato Kazumi 1
▲	9	Thin Film FET Using Interface Conduction between (Ba,Sr)TiO3 and SiON Insulators	Graduate School of Eng. Sci., Osaka Univ.　*Superficial Lino 1, Lee Bong Yeon 1, Kanashima Takeshi 1, Okuyama Masanori 1
	10	Ferroelectric gate field effect transistors modeling by using carbon nanotube	Sharp 1,Tokyo Inst. of Tech. IGSSE 2　*Ibata Masakazu 1,Takashita Yuichiro 2,Ishiwara Hiroshi 2
	11	Fabrication and evaluation in vacuum of ferroelectric gate carbon nanotube transistor	Tokyo Inst. Of Tech. IGSSE 1　*Takashita Yuichiro 1, Ibata Masakazu 1, Ishiwara Hiroshi 1
	12	Ferroelectric gate field effect transistors by using C60	Tokyo Inst. of Tech. IGSSE 1,Sharp Corp 2,　*Annen Kazunori 1 ,Ibata Masakazu 1,2 ,Isiwara Hirosi 1
	13	Formulation of Initial-Radius Dependency of Long Term Retention Characteristics of Nano Domain Dots Formed on Congruent Single-Crystal LiTaO3	Research Inst. of Electrical Communication, Tohoku Univ.　*Odagawa Nozomi 1, Cho Yasuo 1
△	14	Signal detection from LiTaO3 single crystal medium with active frequency stabilization.	Pioneer Co. 1　*Yabe Tomotaka 1,Tateishi Kiyoshi 1,Maeda Takanori 1,Onoe Atsushi 1
6.1 Ferroelectric Films
September 5 9:00〜18:30
5a-ZL-　/ II
▲	1	Low Temperature Preparation of Bi4Ti3O12 Thin Films by Hydrothermal Synthesis	Graduate School of Eng. Sci., Osaka Univ. 1, Graduate School of Sci. and Tech., Kyoto Inst. of Tech. 2　*Nguyen Truong Tho 1, Inoue Akihiro 1, Noda Minoru 2, Okuyama Masanori 1
	2	Ferroelectric Properties of Bi4Ti3O12 Thin Film Formation by Alcohol Related Solutions	Shibaura Inst. of Tech. 1　Masaki Yamaguchi 1
△	3	Dependence of crystal structure on temperature of Bi4Si3O12 added Bi4-xSmxTi3O12-d ferroelectric materials	Tokyo Univ. of Science 1　*Ito Taichi 1,Kitamura Naoto 1,Idemoto Yasushi 1
	4	Dependences of crystal structure and ferroelectric performance on composition and heat-treatment for (Bi, Pr)-Ti-Si-O ferroelectric material	Tokyo Univ. of Science, 1　Idemoto Yasushi 1, *Kotani Hirotaka 1,Naoto Kitamura 1
	5	Dependence of average, local crystal structures, and ferroelectric performance on composition and heat treatment of Sr-Bi-Ta-W-Si-O ferroelectric material	Tokyo Univ. of Science 1　Idemoto Yasushi 1, Murata Morio 1
△	6	Characterization of Bi-layered ferroelectric oxide/phosphor structures	Kanazawa Inst. of Tech., Graduate School 1, OEDS R&D Center 2　*Yusuke Ohtani 1, Koji Aizawa 2
		Break 10:30〜10:45
	7	Polarization Switching Behavior of YMnO3 Epitaxial Thin Films	Osaka Prefecture Univ. 1　Maeda Kazuhiro 1
	8	Multiferroic behavior at room temperature for rare-earth garnet thin films	Osaka Univ. 1, Tokyo Univ. 2　*Koide Takushi 1, Seki Munetoshi 2, Tabata Hitoshi 2
	9	DMS ZnCoO growth on ferroelectric gate substrate: Toward electric field induced magnetization	Osaka Univ. 1, Tokyo Univ. 2　*Yamahara Hiroyasu 1, Tabata Hitoshi 2
△	10	An investigation of spontaneous polarization of polycrystalline BiFeO3 thin films by PUND measurement at low temperature	Tokyo University of Science　*Hiroshi Naganuma 1, Yosuke Inoue 1, Soichiro Okamura 1
	11	Raman study of BiFeO3 thin films fabricated by sol-gel method using different Bi/Fe ratio precursors	Kyoto Inst. 1,Wakayama Univ. 2,Osaka Univ. 3　*Nakamura Takaaki 1,Fukumura Hideo 1,Hasuike Noriyuki 1,Harima Hiroshi 1,Kisoda Kenji 2,Nakamura Yoshitaka 3,K.Y.Yun 3,Nakashima Seiji 3,Okuyama Masanori 3
		Lunch 12:00〜13:00
5p-ZL-　/ II
	1	JJAP Paper Award Ferroelectricity Down to at Least 2 nm in Multiferroic BiFeO3 Epitaxial Thin Films	Unite Mixte de Physique CNRS-Thales　M. Bibes
		Break 13:30〜13:45
▲	2	A Reduced Coercive Electric Field in Mn-substituted BiFeO3 Thin Films Formed by Chemical Solution Deposition Method	Tokyo Tech 1,Fujitsu Laboratories Ltd 2　Z.Y.Zhong1、S.K.Sing1、K.Maruyama2、H.Ishiwara1
	3	Annealing temperature dependence of ferroelectricity and magnetic property in polycrystalline BiFeO3 films	Tokyo University of Science　*Inoue Yosuke 1,Naganuma Hiroshi 1,Okamura Soichiro 1
	4	The Effect of Bi-excess Surface Layers in BiFeO3 Thin Films Prepared by Chemical Solution Deposition	Graduate School of Eng. Sci., Osaka Univ.　*Nakamura Yoshitaka 1, Nakashima Seiji 1, Okuyama Masanori 1
	5	Ferroelectric and magnetic properties of multiferroic Bi-Layer-Structured Bi4+nTi3FenO12+3n thin films by PLD	Osaka Univ. 1　*Nakashima Seiji 1, Nakamura Yoshitaka 1, Omuyama Masanori 1
	6	Leakage current and ferroelectric properties of Cr, Mn, Co, Ni, Cu doped BiFeO3 thin films	Tokyo University of Science　*Jun Miura 1,Tomosato Okubo 1,Hiroshi Naganuma 1,Soichiro Okamura 1
	7	Preparation and the dielectric properties of BiFeO3-LaAlO3 solid solutions	Hyogo Pref. Inst of Tech. 1, Osaka Pref. Univ. 2　Hirokazu Izumi 1, Shinsuke Inui 2
	8	Chemical synthesis and properties of BiFeO3-PbTiO3 thin films with the morphotropic phase boundary composition	ESI, Nagoya Univ.　Wataru Sakamoto 1, Asaki Iwata 1, Tetsuo Shimura 1, Toshinobu Yogo 1
△	9	Preparation and characterization of BiFeO3 thin films on diaphragm structure	Osaka Univ. 1, Univ. Hyogo 2　*Nakashima Seiji 1, Dan Ricinschi 1, Nakamura Yoshitaka 1, Okuyama Masanori 1, Fujisawa Hironori 2, Shimizu Masaru 2
	10	Fabrication and characterization of multiferroic BiFeO3 nanoparticles	Kyoto Inst. Tech. 1,Wakayama Univ. 2　*Matsui Satoshi 1,Nakamura Takaaki 1,Fukumura Hideo 1,Kisoda Kenji 2,Hasuike Noriyuki 1,Nishio Koji 1,Isshiki Toshiyuki 1,Harima Hiroshi 1
		Break 16:00〜16:15
	11	Young Scientist Award for the Presentation of an Excellent Paper Observation of ferroelectricity in PbTiO3 ultrathin films by scanning nonlinear dielectric microscopy	Univ. Hyogo 1　Masashi Yonetani 1, Yoshiyuki Takashima 1, Toru Horii 1, Hironori Fujisawa 1, Masaru Shimizu 1
	12	Fabrication of epitaxial PbTiO3 thin films on Pt/Ir/SrTiO3(001) substrate by metalorganic chemical vapor deposition	Univ. Hyogo 1　Masayoshi Kume 1, Hironori Fujisawa 1, Masaru Shimizu 1
	13	Investigation of Supply Method for Substitution Compounds in Spray MOCVD	Tokyo Univ. of Science, Suwa 1, NAIST 2　*Yohei Otani 1, Yukio Fukuda 1, Masaki Shibuya 2, Kiyoshi Uchiyama 2, Tadashi Shiosaki 2
△	14	Crystal structure of (100) -oriented epitaxial lead titanate film having large strain	Tokyo Tech. 1, Bruker AXS 2　*Ikariyama Rikyu 1, Nakaki Hiroshi 1, Saito Keisuke 2, Morioka Hitoshi 2, Funakubo Hiroshi 1
△	15	Growth of Perfectly c-axis-oriented Epitaxial PZT Thick Films on Single Crystal Substrates with Large Thermal Expansion Coefficient	Tokyo Tech. 1, Bruker AXS. 2　*Fujisawa Takashi 1, Nakaki Hiroshi 1, Ikariyama Rikyu 1, Saito Keisuke 2, Morioka Hitoshi 2, Funakubo Hiroshi 1
△	16	Fabrication of high quality epitaxial Pb(Zr,Ti)O3 ultrathin films by MOCVD	Univ.Hyogo 1, Fujitsu Lab.Ltd. 2　Ryousuke Sumii 1, Hironori Fujisawa 1, Masaru Shimizu1, Yasutoshi Kotaka2, Kouitirou Honda2
	17	Observation of ferroelectricity in Pb(Zr,Ti)O3 ultrathin films by scanning nonlinear dielectric microscopy	Univ. Hyogo 1　Masashi Yonetani 1, Ryosuke Sumii 1, Toru Horii 1, Hironori Fujisawa 1, Masaru Shimizu 1
	18	Fabrication of Pb(Zr,Ti)O3 ferroelectric thin film capacitor by laser lift-off technique and characterization of fatigue properties.	Grad. School of Natural Sci. & Tech. Kanazawa Univ. 1,Ishikawa National College of Tech. 2　*Teratani Hitoshi 1,Ohtsubo Shigeru 2,Kawae Takeshi 1,Morimoto Akiharu 1,Kumeda Minoru 1
	19	Micropatterning of Ferroelectric Thin Films by Electron Beam Induced Reaction Process	Toyama Pref. Univ.　Tadashi Fujii, Hiroaki Matsunaga, Masatoshi Adachi
6.1 Ferroelectric Films
September 6 10:00〜12:30
6a-ZV-　/ II
	1	Temperature Dependence of the Leakage Current Density of Ferroelectric Pb(Zr,Ti)O3 Thin-film Capacitors	Tokyo Univ. of Science 1　*Okamura Soichiro, Tanimura Mitsumasa, Shima Hiromi, Koshika Soichiro, Naganuma Hiroshi
	2	Polarization direction and thickness dependence of Imprint Property of PZT thin-film capacitors	Tokyo University of Science 1　*Koshika Soichiro 1,Shima Hiromi 1,Naganuma Hiroshi 1,Okamura Soichiro 1
	3	Fitting Equation of Fatigue Properties of (111)-Highly Oriented PZT-Base Ferroelectric Thin Film Capacitors	SEIKO EPSON 1　*Hamada Yasuaki 1, Kijima Takeshi 1, Kimura Satoshi 1
	4	Preparation and characterization of PbZr0.5Ti0.5O3 thick films by new slurry method	Chubu Univ. 1.　*Takeda Tomoya 1. Takahashi Makoto 1. Sato Shouji 1. Kato Masanori 1. Wakita Kouichi 1.
△	5	Fatigue test of piezoelectric thin film utilizing self-sensitive piezoelectric microcantilever	National Institute of Advanced Industrial Science and Technology　Takeshi Kobayashi 1, Masaaki Ichiki 1, Ryutaro Maeda 1
		Break 11:15〜11:30
▲	6	Tunable optical filter of photonic crystal using PLZT thin film	Osaka Univ. 1, Osaka Univ. 2　*Le Van Hai 1, Masanori Okuyama 1, Hisahito Ogawa 2
△	7	Piezoelectric properties of epitaxial KNbO3-NaNbO3 thin films	Kyoto Univ. 1　*Mino Takuya 1, Kuwajima Shuichiro 1, Suzuki Takaaki 1, Kanno Isaku 1, Kotera Hidetoshi 1, Wasa Kiyotaka 1
	8	Preparation of Ir-based electrodes by liquid-delivery MOCVD (III)	Univ. Hyogo 1, Sagami Chem. Res. Center 2, Tosoh Corp. 3　*Yamashita Daisuke 1, Fujisawa Hironori 1, Shimizu Masaru 1, Tada Kenichi 2, Yamakawa Tetsu 2, Kawano Kazuhisa 3, Oshima Noriaki 3
	9	Vibratonal motion of PET induced by electrostatic force.	Shinshu Univ.　*Yusuke Kurosawa 6, Toshihiro Hirai
6.2 Carbon Films
September 5 9:00〜19:00
5a-F-　/ II
	1	In situ high-resolution photoelectron spectra of a peanut-shaped C60 polymer	Tokyo Tech 1, IMS 2　Onoe Jun 1, Ito Takahiro 2, Kimura Shin-ichi 2
	2	Photoexcited carrier relaxation dynamics in a peanut-shaped C60 polymer	Hokkaido Univ. 1, Tokyo Tech 2　*Yasunori Toda 1, Soh Ryuzaki 2, Jun Onoe 2
△	3	Development of the supporting film for low-energy electron diffraction microscope	Sci. & Eng., Waseda Univ.,　*Risa Uratani,Tsuyoshi Ishikawa, and Chuhei Oshima
	4	In-situ TEM observation of graphite formation using cobalt oxide particles	Grad.Schl.of.Eng.Osaka Univ. 1　*Yahiro Takanori 1,Takai Yoshizou 2
	5	Fabrication of mechanically Hard a-CNx films by MW plasma CVD	Nagaoka Univ of Tech. 1　*Akio Shinohara 1, Hidetoshi Saitoh 1, Haruhiko Ito 1
		Break 10:15〜10:30
	6	Formation of a-CN film by deposition of CN radicals (1) -LIF observation of the CN(X) state-	Nagaoka Univ. of Tech. 1　*Wada Akira 1, Ito Haruhiko 1
	7	Formation of a-CN films by the deposition of CN radicals (2) -Sticking probability of CN radicals-	Nagaoka Univ. of Tech.　Hitoshi Araki, Akira Wada, Hidetoshi Saitoh, Haruhiko Ito
	8	Oxidation of Soft a-CNx:H Films in Air by Irradiation of UV light	Shizuoka Univ., Res. Inst. Elect. 1　Sakurai Katsutoshi 1, *Kinoshita Haruhisa 1
	9	Preparation of Amorphous Carbon Nitride Films Using Hot Wire CVD with Triazole	Gifu Natl. Coll. Technol 1, Gifu Univ. 2 　*Hitoe Habuchi 1, Kenichiro Yasuda 1, Takahiro Kameyama 1, Ryo Nakashima 1, Takashi Katsuno 2
△	10	Characterization of BCN film using TMAB（trisdimethyl-aminoboron) gas	Osaka Univ. 1　*Shinji Tokuyama 1,M.K.Mazmder 1,Chiharu Kimura 1,Hidemitsu Aoki 1,Takashi Sugino 1
△	11	Synthesis of Boron Nitride thin film using Nanopulse plasma CVD method	Tokyo Inst. of Tech. 1, JSPS 2, NGK INSULATORS,LTD. 3, Nagoya Univ. 4　*Masanori Saito 1,2, Takao Saito 3, Hiroya Murakami 1, Naoto Ohtake 4
		Lunch 12:00〜13:00
5p-F-　/ II
	1	Young Scientist Award for the Presentation of an Excellent Paper Development of A New Computational Method for Studying Friction Property of Diamond-Like Carbon	Dept. Appl. Chem., Tohoku Univ. 1, NICHe, Tohoku Univ. 2 　Toshiaki Shibata 1, Yusuke Morita 1, Riadh Sahnoun 1,Michihisa Koyama 1, Hideyuki Tsuboi 1, Nozomu Hatakeyama 1, Akira Endou 1, Hiromitsu Takaba 1, Momoji Kubo 1
△	2	A Quantum Chemical Molecular Dynamics Simulation Study on Formation Process of Diamond-Like Carbon	Dept. Appl. Chem., Tohoku Univ. 1 NICHe, Tohoku Univ. 2 　*Aodun Qimuge 1, Morita Yusuke 1, Sahnoun Riadh 1, Koyama Mitihisa 1, Tsuboi Hideyuki 1,Hatakeyama Nozomu 1, Endou Akira 1, Takaba Hiromisto 1, Kubo Momoji 1, Carlos Del Carpio 1, Akira Miyamoto 1,2
	3	Coating to iron of DLC thin film	Meiji Univ.　Kanai Naoya 1,Murata Yoshimi 1,Uekusa Shinitirou 1
	4	Effects of the working pressure on the deposition of DLC films using bipolar-type PBII methods	National Institute of Advanced Industrial Science and Technology (AIST) - Chubu　*Nakao Setsuo 1
	5	Characterization of Various DLC Films Prepared by T-shape Filtered-Arc-Deposition System	Toyohashi Univ. Technol. 1, Itoh Optical Industrial Co., Ltd. 2, Onward Ceramic Coating Co., Ltd. 3, Kanagawa Indust. Technol. R. C. 4　*Kamiya Masao 1,2, Tanoue Hideto 1, Takikawa Hirofumi 1, Taki Makoto 3, Hasegawa Yuushi 3, Kumagai Masao 4
	6	Field Emission Properties of Carbon Thin Films deposited on Cu and Si substrates by Sputtering	Shinshu Univ.　*Y. Taguchi, K. Miyazaki, T. Ogawa, T. Yamakami, R. Hayashibe, K. Abe and K. Kamimura
	7	Suppression of Pinhole Defects in DLC Film prepared by Plasma-based Ion Implantation	Univ. of Hyogo　*Nishino Wataru 1,Fujiwara Etsuo 1,Yatsuzuka Mitsuyasu 1
		Break 14:45〜15:00
	8	Dissociative excitation reaction of BrCN in the ECR discharge of rare gases	Nagaoka Univ. of Tech.,　*Hiroki Hayashi , Yusuke Watanabe , Haruhiko Ito
	9	a-CNx:H for hydrogen storage- Synthetic condition and CN (B-X) emission spectrum-	Nagaoka Univ. of Tech.　Hiroyuki Yagi, Hidetoshi Saioh, Haruhiko Ito
	10	The effect of the additive element on the characteristic of DLC thin film.	IERIC 1　*Nakayama Akira 1
△	11	Iodine doping of a-C:H films prepared by RF sputtering(II)	Univ. of the Ryukyus　Saida Yukihiro 1,Sato Masamine 1,Tonoe Haruki 1,Yamazato Masaaki 1,Higa Akira 1
	12	Characterization of Si-DLC thin films prepared by radio-frequency plasma CVD using organosilanes and methane	Hirosaki Univ. 1　*Nakazawa Hideki 1, Kinoshita Takeshi 1, Kaimori Yuhta 1, Asai Yuhki 1, Mashita Masao 1
	13	Hydrogen-storage characteristics of a-CNx:H materials	Nagaoka Univ. of Tech. 1, Univ. of Hyogo 2　*Ito Haruhiko 1, Nozaki Taro 1, Kanda Kazuhiro 2, Saitoh Hidetoshi 1
	14	Analysis of visible-ray Raman spectra of amorphous carbon films	Nagaoka Univ. Tech. 1　*Ono Yuki 1, Ohshio Shigeo 1, Saitoh Hidetoshi 1
	15	Analysis of UV-Raman spectra of amorphous carbon films	Nagaoka Univ.Tech. 1　*N. Gawazawa 1,Y. Ono 1,S. Ohshio 1,H. Saitoh 1
		Break 17:00〜17:15
△	16	Structural evaluation of BNx films prepared by sputtering and ion-beam-assisted deposition by NEXAFS spectra	LASTI 1,HYOGO Univ 2　*Miyamoto Kazuyoshi 1,2 ,Niibe Masato 2,Reng Bo 2,Uchida Hitoshi 2,Mitamura Toru 2,Mochiji Kozo 2
	17	Study on optical properties of amorphous carbon nitride films prepared by RF sputtering	National Defense Academy 1　*Aono Masami 1, Kikuchi Shunsuke 1, Kitazawa Nobuaki 1, Watanabe Yoshihisa 1
△	18	In-situ analysis of carbon materials using spectroscopic ellipsometry	Nagoya Univ.1, Katagiri Eng. Co., Ltd.2, Meijo Univ.3　In-situ analysis of carbon materials using spectroscopic ellipsometry
	19	Structural analysis of DLC films by grazing incidence X-ray scattering with synchrotron radiation	Toyota Central R&D Lab., Inc. 1　*Takashi ISEKI 1, Hiroyuki MORI 1, Yuka YAMADA 1, Tadashi OSHIMA 1, Yoshiki SENO 1,Satoshi YAMAGUCHI 1, Shingo OHTA 1, Kazuyuki NAKANISHI 1
	20	Application of a-C:H films coating for artificial blood vessel	Tokyo Denki University　*Kanasugi Kazuya 1, Matsuo Haruki 1, Ohgoe Yasuharu 1, Hirakuri Kenji 1, Funakubo Akio 1, Fukui Yasuhiro 1
△	21	Change of chemical structure in the diamond-like carbon (DLC) surface by dry oxidation	Graduate School of AdSM, Hiroshima Univ.1,Toyo Advanced Technologies Co.,Ltd.2　*Kunihiko Motomitsu1, Susumu Takabayashi1, Hiroaki Motoyama1, Keishi Okamoto1,2, Tatsuyuki Nakatani2, Hiroyuki Sakaue1, Hitoshi Suzuki1,Takayuki Takahagi1
△	22	Analysis of heat-resistivity of diamondlike carbon (DLC) films by photoelectron spectroscopy	Grad. Schl. of AdSM, Hiroshima Univ. 1, Toyo Advanced Technologies Co., Ltd. 2, HiSOR 3　*Takabayashi Susumu 1, Okamoto Keishi 1,2, Shimada Kenya 3, Motomitsu Kunihiko 1, Motoyama Hiroaki 1, Nakatani Tatsuyuki 2, Sakaue Hiroyuki 1, Suzuki Hitoshi 1, Takahagi Takayuki 1
6.2 Carbon Films
September 6 9:00〜18:30
6a-F-　/ II
△	1	High quality heteroepitaxial diamonds by lateral growth	Aoyama Gakuin Univ. 1, TOPLAS ENGINEERING CO.,LTD 2　Kamano Takashi 1, Yutaka Ando 1, Suzuki Kazuhiro 2, Sawabe Atsuhito 1
	2	Heteroepitaxially grown diamond with n-type conductivity by phosphorus doping.	Aoyama Gakuin Univ. 1, TOPLUS Eng. 2, NIMS 3　Y. Towata 1, Y. Ando 1, K. Suzuki 2, S. Koizumi 3, A. Sawabe 1
	3	P-Doped Diamond Film Growth Using High Power Density MWPCVD with Conventional Quartz-Type Deposition Apparatus	Graduate School of Eng., Osaka Univ. 1　Nakai Takahiro 1, Maida Osamu 1, Ito Toshimichi 1
	4	Fabrication of large single crystalline diamond plates by high rate homoepitaxial growth and lift-off process	AIST　*Mokuno Yoshiaki, Chayahara Akiyoshi, Yamada Hideaki, Tsubouchi Nobuteru
△	5	Anisotropic Expansion of Crystalline Lattice in (100) and (111) Heavily Boron-doped CVD Diamond	Waseda Univ. 1,NIMS 2　*Kawano Akihiro 1,Iriyama Shingo 1,Ishiwata Hitoshi 1,Okada Ryosuke 1,Takano Yoshihiko 2,Ishii Akira 2,Kawarada Hiroshi 1
	6	Observation of defects on (100) homoepitaxial diamond by X-ray topography and etching method	Sumitomo Electric Industries 1, AIST 2　Natsuo Tatsumi 1, Tomohisa Kato 2, Kazuhiro Ikeda 2, Hitoshi Umezawa 2, Yoshiki Nishibayashi 1, Takahiro Imai 1, Shinichi Shikata 2
		Break 10:30〜10:45
	7	Models of Diamond Growth on the Stepped Diamond (001) Surfaces	Nihon Univ. 1　*Yanagihara Takashi 1
△	8	Molecular Dynamics Study on Mechanism of Ultralow Friction of OH-terminated Diamond Thin Films	Dept. Appl. Chem., Tohoku Univ. 1, NICHe, Tohoku Univ. 2　Yusuke Morita 1, Tasuku Onodera 1, Michihisa Koyama 1, Riadh Sahnoun1, Hideyuki Tsuboi 1, Nozomu Hatakeyama 1, Akira Endou 1, Hiromitsu Takaba 1, Momoji Kubo 1, Carlos A. Del Carpio 1, Akira Miyamoto 1, 2
	9	Evaluation of work property for aluminum-cutting tool by hybrid nano diamond coating	Kanazawa Institute of Technology 1　*Mayu Hayakawa 1, Noriaki Ikenaga 1, Noriyuki Sakudo 1
	10	Effect of sp2-bonded amorphous carbon phase on n-type conduction of nanocrystalline diamond films	Kyushu Univ. 1　*Ikeda Tomohiro 1, Teii Kungen 1
	11	Electrical Properties of Nanocrystalline Diamond Films and Wires	1Department of Mechanical Engineering, 2Department of Electrical Engineering, 3Nanomaterials and Nanomanufacturing Research Center, University of South Florida　Q. Hu1, S. Jeedigunta2, Z. Xu1, M. Hirai3, and A. Kumar1,3
		Lunch 12:00〜13:00
6p-F-　/ II
	1	Local properties measurements of B-doped diamond thin films.	JST-CREST 1, Univ. of Tokyo 2,4, Graduate School of Tokushima 3, KAST 5, Waseda Univ. 6, NIMS 7　*Okazaki Sohei 1,2, Tachiki Masashi 1, Okazaki Noriaki 3, Hasegawa Tetsuya 4,5, Iriyama Shingo 6, Okada Ryusuke 6, Kawarada hiroshi 6, Koinuma Hideomi 1,2,7
	2	Photoelectron emission from heavily boron-doped diamond with metal–nonmetal transition	NRI-AIST 1　*Daisuke Takeuchi 1, Norio Tokuda 1, Sung-Gi Ri 1, Masahiko Ogura 1, Satoshi Yamasaki 1
	3	Impurity band structure of boron doped Diamond	Tokai Univ. 1 Fukui Univ. 2　*Inushima Takashi 1, Abe Takahiro 1, Kurihara Kenta 2, Yanagawa Thoru 2, Fukui Kazutosi 2
	4	Hall effects of photocarrier in CVD diamond films	Nihon Univ. 1, AIST 2　*Kubo Takehito 1, Nakano Tomohisa 1, Masui Tatsuya 1, Murayama Kazurou 1,Ri Seiki 2, Yamasaki Satoshi 2, Okushi Hideyo 2
	5	Time-resolved spectrum of photoluminescence from high electron-hole pair density in diamond	Nihon Univ. 1,AIST 2　Sakamoto Yoshihiro 1,Murayama Kazurou 1,Yamasaki Satoshi 2,Ohkushi Hideyo 2
	6	Analysis of nonlinear increase of excitonic emission intensity for diamond (1)	AIST 1, Univ. of Tsukuba 2　Makino Toshiharu 1, Kanno Shokichi 1, Tokuda Norio 1, Kato Hiromitsu 1, Yamasaki Satoshi 1,2, Okushi Hideyo 1
	7	Analysis of nonlinear increase of excitonic emission intensity for diamond (2)	AIST 1, Univ. of Tsukuba 2　*Makino Toshiharu 1, Kanno Shokichi 1, Tokuda Norio 1, Kato Hiromitsu 1, Yamasaki Satoshi 1,2, Okushi Hideyo 1
		Break 14:45〜15:00
	8	Evaluation of energy spread of electron beam from diamond electron source	Sumitomo Electric Industries, LTD. 1　*Namba Akihiko 1, Yamamoto Yoshiyuki 1, Nishibayashi Yoshiki 1, Imai Takahiro 1
	9	Improvement of RF characteristics of p+-π-p+ MISFET fabricated on heteroepitaxial diamond	Electronics Res. Lab., Kobe Steel, Ltd. 1　*Kawakami Nobuyuki 1, Yokota Yoshihiro 1, Tachibana Takeshi 1
	10	Diamond FET fabricated by combining ion-implantation and high-pressure and high-temperature annealing	NTT Basic Research Labs　*K. Ueda, M. Kasu, Y. Yamauchi, T. Makimoto
△	11	The selective epitaxial growth and the electrical evaluation of Boron-doped diamondfor source and drain regions in diamond FET	Waseda Univ. 1,AIST 2　Ichikawa Masaru 1,Jingu Yoshikatsu 1,Iriyama Shingo 1,Okada Ryousuke 1,Hirama Kazuyuki 1,Umezawa Hitoshi 2,Kawarada Hiroshi 1
	12	Bias Dependence of Cut-Off Frequency of H-Terminated Diamond Field-Effect Transistors	NTT Basic Research Laboratories　Makoto Kasu 1, Kenji Ueda 1, Hiroyuki Kageshima 1, Yoshiharu Yamauchi 1
	13	Theoretical study on Al adsorption on O-terminated diamond (001) surfaces	NTT Basic Research Labs. 1　*Kageshima Hiroyuki 1, Kasu Makoto 1
	14	Chemical modification of H-terminated diamond powders with sulfur-containing functionalities by the use of elementary sulfur	AIST 1, Kyushu Inst. Tech. 2　*Nakamura Takako 1, Ohana Tsuguyori 1, Hagiwara Yuta 2, Tsubota Toshiki 2
		Break 16:45〜17:00
	15	Lateral-type Schottky diodes formed on lightly-doped p-type homoepitaxial diamond films	NIMS 1, Osaka Univ. 2　Tokuyuki Teraji 1, Satoshi Koizumi 1, Yasuo Koide 1, Toshimichi Ito 2
	16	A diamond Schottky barrier diode with a field plate structure.	AIST. 1, SEI. 2　Ikeda Kazuhiro 1, Umezawa Hitoshi 1, Tatsumi Natsuo 2, Kumaresan Ramanujam 1, Shikata Shin-ichi 1
	17	High-temperature characteristics of pseudo-vertical punch-through type diamond Schottky barrier diode	AIST 1, Sumitomo Elec. Ind. 2　Hitoshi Umezawa 1, Natsuo Tatsumi 2, Kazuhiro Ikeda 1, Ramanujam Kumaresan 1, Norio Tokuda 1, Shin-ichi Shikata 1
	18	Photovoltaic Characteristics of a-C:H Multilayer Device and a-C:H/ Diamond Device	Tokyo Inst. of Tech. 1, Sumitomo Electric Industries, LTD. 2, Nagoya Univ. 3　Hiroki Akasaka 1, Imai Takahiro 2,Hiroya Murakami 1, Naoto Ohtake 3
▲	19	Submicron metal-semiconductor-metal diamond deep ultraviolet photodetector	National Institute for Materials Science 1, CNRS 2　Liao Meiyong 1, Jose Alvarez 2, Yasuo Koide 1
	20	Characterization of the soft X-ray detectors using the high-quality CVD diamond thin films	Osaka Univ.1, JAEA/SPring-82　Iwakaji Yoko1, Kanasugi Masayuki1, *Maida Osamu1, Takeda Yukiharu2, Saitoh Yuji2, Ito Toshimichi1
6.3 Oxide Electronics
September 4 10:00〜17:30
4a-ZT-　/ II
	1	Evaluation of the indium precursors with low melting point for preparing In2O3 thin films by MOCVD	Toshima MFG 1,Tokyo Univ. of Tech. 2,Meisei Univ. 3　*Tanaka Tsutomu 1,Koga Noboru 2,Tasaki Yuzo 1,Kezuka Hiroshi 2,Yoshizawa Shuji 3
	2	Fabrication and characterization of transparent conductive H-doped In2O3 thin films	AIST Research Center for Photovoltaics 1　*Koida Takashi 1, Fujiwara Hiroyuki 1, Kondo Michio 1
▲	3	Synthesis of ITO films using thermal rf plasma torch	Saitama Univ. 1, RIKEN　2　*Li Junshuai 1, Takemura Yuichiro 1, Kobayashi tomohiro 2, Shirai Hajime 1
	4	Deposition of Mn-doped ITO films by RF magnetron sputtering	Kyoto Univ. 1　*Tanabe Kohei 1, Nakamura Toshihiro 1, Tachibana Kunihide 1
	5	Examination of Device Applied ITO Thin Films Deposited at Low Temperature	Niigata Univ. 1　*Nakata Yusuke 1, Miyazaki Shinsuke 1, Umetsu Takeshi 1, Itou Yoshihiro 1, Niki Masato 1
	6	Study of influence of under layer on ITO crystallization	Toyobo R&D center 1　*Murakami Hideo 1, Oya Toshiyuki 1, Matsuda Shusei 1, Ito Katsuya 1
		Break 11:30〜11:45
	7	Fabrication of phosphor SnO2 thin film by Excimer Laser Assisted Metal Organic Deposition	CIT 1,AIST 2　*Kato Fumitaka 1,Tsuchiya Tetsuo 2,Nakajima Tomohiko 2,Watanabe Akio 2,Igarashi Kaoru 1,Shimizu Norio 1,Kumagai Toshiya 2
	8	In-situ analyses on sputtering process to deposit Al doped ZnO transparent conductive films	Aoyama Gakuin Univ. 1　*Watanabe Daisuke 1,Satou Yasushi 1,Shigesato Yuuzou 1
	9	Effects of hydrogen plasma exposure on ZnO transparent conductive oxide fabricated by Sol-gel process	Osaka Univ. 1　*Matsuura Tsutomu 1, Sobajima Yasushi 1, Toyama Toshihiko 1, Okamoto Hiroaki 1
	10	Photocatalytic Lithography using ZnO Nano-Islands	Takamatsu National College of Technology 1, Osaka Prefectural College of Technology 2　*Kuroda Mami 1, Okano Hiroshi 1, Maeda Atsushi 2
	11	Effects of Ar plasma annealing for Nb-doped TiO2 films on glass substrates by reactive sputtering	Tokai Univ.1　*Hojo Mika 1,Okimura Kunio 1
		Lunch 13:00〜14:00
4p-ZT-　/ II
	1	Fabrication of transparent conductive Nb:TiO2 (TNO) films on various substrates by sputtering technique	Univ. Tokyo 1, KAST 2　*Hoang NgocLamHuong 1,2, Hitosugi Taro 1,2, Yamada Naomi 2, Kasai Junpei 2, Furubayashi Yutaka 2, Shimada Toshihiro 1,2, Hasegawa Tetsuya 1,2
	2	Deposition of transparent conductive Nb-doped TiO2 polycrystalline films by 2-step sputtering process	KAST 1, Univ. Tokyo 2　*Yamada Naoomi 1, Kasai Junpei 1, Taro Hitosugi 1,2, N.L.H Hoang 1,2, Nakao Shoichiro 1, Hirose Yasushi 1, Furubayashi Yutaka 1, Shimada Toshihiro 1,2, Tetsuya Hasegawa 1,2
	3	Mechanism of transparent conductive properties of anatase TiO2-based transparent conducting oxides	Univ. of Tokyo. 1,3 KAST 2　*Hitosugi Taro 1,2, Kamisaka Hideyuki 3, Yamashita Koichi 3, Chikamatsu Akira 3, Kumigashira Hiroshi 3, Oshima Masaharu 3, Nogawa Hiroyuki 1, Tsuruhama Tetsukazu 1, N. L. H. Hoang, Nakao Shoichiro 2, Furubayashi Yutaka 2, Kasai Junpei 2, Hirose Yasushi 2, Naoomi Yamada 2, Shimada Toshihiro 1,2, Hasegawa Tetsuya 1,2
	4	correlation between oxygen partial pressure during deposition of amorphous Nb:TiO2 and resistivity after annealing	KAST 1, Univ. of Tokyo 2　S. Nakao 1, T. Hitosugi 1,2, N. Yamada 1, Y. Furubayashi 1, Y. Hirose 1, T. Shimada 1,2, T. Hasegawa 1,2
	5	Structural and Photocatalytic Properties of TiO2/Al2O3 Thin Films Prepared by RF Magnetron Sputtering Using Oxygen Radical	Tokyo University of Science 1,　*Minamikawa Masaki 1, Higuchi Tohru 1, Tokita Shinji 1, Hattori Takeshi 1, Tsukamoto Takeyo 1,
	6	Electronic Structures of TiO2(Anatase)/Al2O3 Thin Film Probed by Soft-X-Ray Emission Spectroscopy and Absorption Spectroscopy	Tokyo Univ. Sci. 1, ISSP, Univ. Tokyo 2, RIKEN 3 　*Higuchi Tohru 1, Minamikawa Masaki 1, Tokita Shinji 1, Hattori Takeshi 1, Tsukamoto Takeyo 1, Fukushima Akiko 2, Shin Shik 2,3
	7	Improvement of photocatalytic-activity in titanium oxides by single-ion implantation	Waseda Univ. 1,ASMeW 2,INN 3 　*Nakayama Hideki 1,Shinada Takahiro 2,Ohdomari Iwao 1,2,3
		Break 15:45〜16:00
	8	Photodecomposition of Methanol with Photocatalytic Titanium Dioxide Thin Films in High Vacuum	Dept. Electronic Sci. & Eng., Kyoto Univ. 1, Int'l Innovation Center, Kyoto Univ. 2　*Noda Kei 1, Hattori Masashi 1, Amari Kouichi 1, Kobayashi Kei 2, Horiuchi Toshihisa 1, Matsushige Kazumi 1
	9	Electronic states of oxygen-annealed anatase Ti0.94Nb0.06O2 epitaxial thin films	Univ,. of Tokyo 1,3, KAST 2　*Nogawa Hiroyuki 1,Hitosugi Taro1,2,Kamisaka Hideyuki 3,Yamashita Kouichi 3,Chikamatsu Akira 3, Kumigashira Hiroshi 3,Oshima Masaharu 3,Nakao Syoichiro 2,Shimada Toshihiro 1,2,Hasegawa Tetsuya 1,2
	10	Electrical characteristics of B-doped TiO2	Shimane Univ. 1, NIMS 2, Niigata Univ. 3　Kaminada Masashi 1, Sato Kouichi 1, Yamada Yasuji 1, Kubo Shugo 1, Matsusita Akiyuki 2, Yamada Yu 3
	11	Solid-phase epitaxial growth of rutile-TiO2 thin films	Univ. of Tokyo 1, KAST 2　*Takayuki Okumoto 1, Taro Hitosugi 1,2, Shoichioru Nakao 2, Junpei Kasai 2, Naoomi Yamada 2, Toshihiro Shimada 1,2, Tetsuya Hasegawa 1,2
	12	Photorechargeability of TiO2/Graphite Nanofiber Thin Film Electrodes	Kagoshima Univ. 1　Horie Yuji 1, Kamikawa Takahiro 1, Higashi Takeshi 1, Sakai Ryuichi 1, Nomiyama Teruaki 1
	13	Analysis of a Photocharging Process on TiO2/Carbon Electrodes by Photocatalytic Degradation of Dye	Kagoshima Univ. 1　*Nomiyama Teruaki 1, Hayafuchi Yuya 1, Horie Yuji 1
6.3 Oxide Electronics
September 5 10:00〜18:30
5a-ZT-　/ II
△	1	Photocatalytic characteristics and structure of TiO2 film deposited by oxygen plasma assisted reactive evaporation method at low-temperature	Tokyo Polytechnic University　*Tetsuya Sakai, Gho Ikegaya, Naonori Osada, Noriyuki Sato, Shohei Mochiduki, Yoichi Hoshi
	2	High rate deposition of TiO2 films by reactive sputtering with two sputtering source.	Tokyo Polytechnic Univ.　*Tetsuya Sakai, Daiki Ishihara, Jun Ikegawa, Kiyoshi Ichikawa, Yoichi Hoshi
	3	Low-temperature synthesis of crystalline TiO2 film by RF magnetron sputtering.	Kitagawa ind. 1,Chubu Univ. 2　*Furuta Ken 1,Taga Yasunori 2
△	4	Anomalous Hall Effect in rutile Ti1-xCoxO2-δ thin films fabricated with sputtering method	IMR,Tohoku Univ. 1, JST-CREST 2　Takashi Yamasaki1,Tomoteru Fukumura1, Masaki Nakano1,Kazunori Ueno1,Yoshinori Yamada1,Masashi Kawasaki1,2
△	5	In-plane anisotropy of anatase TiO2(102) epitaxial film	KAST 1, Univ. of Tokyo 2　*Yasushi Hirose 1, Naoomi Yamada 1, Shoichiro Nakao 1, Taro Hitosugi 1, 2, Toshihiro Shimada 1, 2, Tetsuya Hasegawa1, 2
	6	Synthesis and characterization of TiO2 nanocrystals with well-controlled crystal structure and size	Kyoto Inst. 1,Wakayama Univ. 2　*Hiroyuki Nakano 1,Noriyuki Hasuike 1,Toshiyuki Isshiki 1,Koji Nishio 1,Kenji Kisoda 2,Hiroshi Harima 1
		Break 11:30〜11:45
△	7	The influence of surface roughness of a titanium substrate on growth of titanium oxide nanotubes	Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ. 1,CREST 2　Ken-ichi Ishibashi 1, Takami Mutou 1, Ryotaro Yamaguchi 1, Yasuo Kimura 1,2, Michio Niwano 1,2, Kingo Itaya 2
△	8	Chemical Modification of TiO2 Nanotube Surface and Its Application	Univ. Hyogo 1　*Osamu Kawanami 1, Dai-ichiro Kato 1, Masayuki Yamamoto 1, Itsuro Honda 1, Yousuke Kawashima 1
△	9	Transition metal-doped rutile TiO2 epitaxial films studied by synchrotron radiation photoemission spectroscopy	MSL Tokyo Tech. 1, CREST-JST 2, The Univ. of Tokyo 3,4　Masao Katayama 1,2, Takatoshi Abe 1, Takeo Ohsawa 1, Hideomi Koinuma 2,3, Isao Ohkubo 4, Hiroshi Kumigashira 4, Masaharu Oshima 4, Yuji Matsumoto 1,2
	10	PES study on Transition Metal-Doped SrTiO3 Epitaxial Thin Films and their Photochemical Properties	MSL Tokyo Tech1, CREST-JST2, The Univ. of Tokyo3,4　Yuji Matsumoto1,2, Takeo Ohsawa1, Hideomi Koinuma2,3, Isao Ohkubo4, Hiroshi Kumigashira4, Masaharu Oshima4
△	11	Electrical properties of ITO films led by the effective creation of oxygen vacancies in the initial growth layer	Kyushu Kyoritsu Univ. 1　*Kono Akihiko 1, Feng Zongbao 1, Nouchi Norimoto 1, Shoji Fumiya 1
		Lunch 13:00〜14:00
5p-ZT-　/ II
	1	Control of Transition Metal Oxide Hetero-structured Nanowire	ISIR-Sanken Osaka Univ. 1　*Kazuki Nagashima 1, Takeshi Yanagida 1, Hidekazu Tanaka 1, Tomoji Kawai 1
	2	A large-area nano patterning of epitaxial oxide films by Mo lift-off technique (II)	JST-CREST 1, ISIR-Sanken Osaka Univ. 2 　Naoki Suzuki 1,2, Hidekazu Tanaka 1,2, Satoshi Yamanaka 2, Tomoji Kawai 1,2
	3	Fabrication of (Fe,M)3O4(M=Mn, Zn) nano dot array-structures using Nanoimprint lithography and their physical properties	Osaka Univ. 1, JST-CREST 2　*Satoru Yamanaka 1, Naoki Suzuki 2, Hidekazu Tanaka 1, 2, Tomoji Kawai 1, 2
	4	Fabrication of epitaxial DyScO3 insulator films for SrTiO3 single crystal field effect transistors	Univ.Tokyo. 1, ISSP. 2　Nishio Kazunori 1, Abe Takuya 1, Ohnishi Tsuyoshi 2, Yamamoto Takehisa 1, Lippmaa Mikk 1,2
	5	Voltage oscillation in VO2 planer-type junctions	JAIST 1　Sakai Joe 1
	6	Fabrication of (Fe,Zn)3O4/Pb(Zr,Ti)O3 Ferromagnetic Field Effect Transistor	ISIR-Sanken, Osaka Univ. 1　*Junichi Takaobushi 1, Hidekazu Tanaka 1, Tomoji Kawai 1
	7	Fabrication of ITO channel Thin Film Transistor using Bi1.5Zn1.0Nb1.5O7 gate insulator	Tokyo Tech. P&ILab. 1　Kondo Youhei 1,Tokumitsu Eisuke 1
	8	Effects of passivation layer on bottom-gate amorphous oxide TFTs	Toppan Printing Co.,Ltd.　*Miyazaki Chihiro, Ito Manabu, Kon Masato, Ikeda Noriaki, Ishizaki Mamoru, Ugajin Yoshiko
	9	Improvement of chromaticity of "Front Drive" color electronic paper	Toppan Printing Co.,Ltd.　*Ikeda Noriaki, Ito Manabu, Miyazaki Chihiro, Matsubara Ryouhei, Ishizaki Mamoru, Kon Masato, Ugajin Yoshiko, Sekine Norimasa
		Break 16:15〜16:30
	10	Resistance Switching Effect of Single Grain Boundary in Nb:SrTiO3 Bicrystal	Murata Manufacturing CO., LTD.　*Sakyo Hirose 1,Hitoshi Nishimura 1,Akinori Nakayama 1, Hideaki Niimi 1,Keisuke Kageyama 1, Hiroshi Takagi 1
	11	Nano-structural amorphous of AlOx thin film for Resistive Random Access Memory(ReRAM)	NIMS 1,Misuzu R&D 2　*Nigo seisuke 1,2,Umeda naoki 1,kitazawa hideaki 1,Kato seiichi 1,Kido giyuu 1
	12	Resistance control of RRAM element by a series-connected load resistor	Sharp Corp. 1　*Takashi Nakano 1, Yasunari Hosoi 1, Yukio Tamai 1, Tetsuya Ohnishi, Kazuya Ishihara 1, Takahiro Shibuya 1, Yushi Inoue 1, Shinobu Yamazaki 1, Shigeo Ohnishi 1, Nobuyoshi Awaya 1
	13	Reduction of Reset Current in NiO-ReRAM Brought about by Ideal Current Limiter	Fujitsu Lab.　*Kinoshita Kentaro 1, Tsunoda Koji 1, Sato Yoshihiro 1, Noshiro Hideyuki 1, Yamazaki Yuichi 1, Fukano Tetsu 1, Yagaki Shinya 1, Aoki Masaki 1, Sugiyama Yoshihiro 1
	14	Preparation of VO2 films on low temperature α-Al2O3 and glass substrates by ICP-assisted reactive sputtering (II)	Tokai Univ.1　*Nihei Yusuke 1,Sasakawa Yusuke 1,Nurul Ezreena 1,Okimura Kunio 1
	15	Electric field-induced phase transition in VO2 films prepared by ICP-assisted reactive sputtering and PLD method	Tokai Univ.1,JAIST.2　*Sasakawa Yusuke 1,Okimura Kunio 1,Sakai Joe 2
	16	Electric Field effect with perovskite-type manganite thin films	JAIST　*Murakami Tatsuya 1, Yamamoto Hiroshi 1, Sakai Joo 1, Imai Shozo 1
	17	Electrical properties of (Pr,Ca)MnO3 films deposited by MOCVD	Kyoto Univ.　Kohei Homma 1,Toshihiro Nakamura 1,Kunihide Tachibana 1
6.3 Oxide Electronics
September 6 10:00〜18:30
6a-ZT-　/ II
	1	Extra low-temperature SiO2 deposition using new silicon precursor as SAM24	Air Liquide Laboratories　*Suzuki Ikuo 1, Yanagita Kazutaka 1, Dussarrat Christian 1,
	2	Control of crystallographic orientation of LiNbO3 thin films on A-plane Al2O3	NTT MI Lab. 1　Akazawa Housei 1, Shimada Masaru 1
	3	Preparation of CuAlO2 thin films by helicon-wave-excited-plasma sputtering method	Tokyo Univ. of Science 1, IMRAM Tohoku Univ. 2　Imao Takashi 1, Takahata Satoru 1, Nakanishi Hisayuki 1, Sugiyama Mutsumi 1, Chichibu Shigefusa 2
	4	Control of cation composition ratio in complex oxides by pulsed laser deposition	Graduate School of Frontier Science, The Univ. of Tokyo 1, The Inst. for Solid State Physics, The Univ. of Tokyo 2, Inst. of Engineering Innovation, The Univ. of Tokyo 3　*Sakai Ryo 1, Ohnishi Tsuyoshi 2, Shibata Naoya 3, Mizoguchi Teruyasu 3, Ikuhara Yuichi 3, Takahisa Yamamoto 1
	5	N-doped NiO Films deposited by reactive rf sputtering	Inst.ofAppl.Phys,Univ.ofTsukuba　Uebuse Satoshi,Isomura Yoshiyuki, Minamiru Takeshi,Akimoto Katsuhiro
	6	Deposition of TiO2 films by unbalanced planar magnetoron sputtering versus opposing Ti target sputtering	Tokushima Univ. 1 　*Kikuo Tominaga 1, Yoshinori Miyamoto 1, Sinya Ohkura 1, Kenji Okada 1
		Break 11:30〜11:45
	7	Epitaxial Growth of MgO Film on Si Substrate Using Metal Magnesium Target	Kanagawa Ind. Tech. Center　*Kaneko Satoru 1, Akiyama Kensuke 1, Kadowaki Teiko 1, Kumagai Masao1
	8	Study of MgO epitaxial film growth on Si(001) surface	IMRAM Tohoku Univ.1　*Shunsuke Sato 1,Tadashi Abukawa 1
	9	High rate sputtering film formation for Magnesium Oxide (MgO)	Matsushita Electric Industrial Co. Ltd.　Hashimoto Jun 1, Terauchi Masaharu 1, Hideki Yamashita 1, Hayata Hiroshi 1, Nishitani Hikaru 1, Fukui Yusuke 1, Okafuji Michiko 1, Nishitani Mikihiko 1, Kitagawa Masatoshi 1
	10	Plasma-discharge ignition voltage of MgO films with variation of true density	Nagaoka Univ.Tech.　*Takano Akihiro,Ohshio Shigeo,Saitoh Hidetoshi
	11	Synthesis and evaluation of Y2O3 film using atmospheric chemical vapor deposition	Nagaoka Univ. Tech. 1　*Kawaguchi Shinnosuke 1,Ohshio Shigeo 1,Saitoh Hidetoshi 1
		Lunch 13:00〜14:00
6p-ZT-　/ II
	1	Preparation of HfO2 film by inkjet printing method using alkoxide solutions	AIST 1　Suzuki Kazuyuki 1, Tanaka Kiyotaka 1, Kato Kazumi 1
	2	Formation of TiO2 Dots by Inkjet Printing Using Alkoxide Solution Ink	AIST　Kiyotaka Tanaka, Kazuyuki Suzuki, Kazumi Kato
	3	MgO microparticle deposition by RF impulse Discharge Using Small Coaxial Electroes	Grad. School of Eng., Tohoku Univ. 1　*Takumasa Muraoka 1,Satoru Iizuka 1
	4	Three-dimensional structure analysis of gold nano-particles photo-electrocrystallized in ionic liquid	Nagoya University1,JFCC2, EcoTopia Science Institute, Nagoya University3　*Tsutomu Nozaki1,Kenta Yoshida1,2, Tsukasa Torimoto1, Nobuo Tanaka1,3
	5	Growth and Evaluation of Magnetoelectric Cr2O3 Single Crystal Films	CST, Nihon Univ.　*Iwata Nobuyuki 1, Asada Takeshi 1, Ootsuki Shunpei 1, Yamamoto Hiroshi 1
	6	Effects of Hydrogen in Tungsten Oxide Films on Optical Properties.	Tohoku Univ. 1, JAEA 2, Inst. for Materials Research 3　*Inouye Aichi 1, Yamamoto Shunya 2, Nagata Shinji 3, Takano Katsuyoshi 2, Yoshikawa Masahito 2, Shikama Tatsuo 3
	7	Researching Origines of the Coloration in Tungsten-oxide	NHK Sci. & Tech. Res. Labs.　*Sato Ryuji 1,Kawamura Norikazu 1,Tokumaru Haruki 1
	8	Effect of dye absorption temperature on the characteristics of dye-sensitized solar cells	Univ. of Electro-Commun.,1 ,21st COE Prigram 2　*Nada Masahiro 1,Syoji Yoshifumi 1,Suganuma Rihito 1,Qing Shen 1 2,Toyoda Taro 1 2,Kobayashi Naoki 1 2
	9	Photovoltaic properties of CdSe quantum dot-sensitized TiO2 electrode -Effect of ZnS coating and dependence of TiO2 thickness-	Dept.Appl.Phys. & Chem. 1,Course of Coherent Opt. Sci. 2　Terumasa Uehata 1, Jyunya.Kobayasi 1, Lina Jaya Diguna 1,2,Qing Shen 1,2, *Taro Toyoda 1,2
	10	Real-space measurement of volume fraction and specific surface ratio of porous titania photocatalysts using HAADF-STEM tomography.	Nagoya University1,JFCC2, EcoTopia Science Institute, Nagoya University3　Kenta Yoshida1,2, Masaki Makihara1, jun Yamasaki1,3, Koh Saitoh1,3, Nobuo Tanaka1,3
		Break 16:30〜16:45
	11	Reversible tuning of SPR of Au nanoparticles with a thermochromic VO2 matrix	AIST 1, GIEC/CAS 2　*Ping Jin 1, Masato Tazawa 1, Gang Xu 2
	12	Structure and chemical analyses of reaction processes at metal/Y2O3 interface	NIMS 1, RIKEN 2　*Ishii Masashi 1, Nakao Aiko 2, Sakurai Kenji 1
	13	Heavy hole doping of epitaxial thin films of widegap p-type semiconductor, LaCuOSe, and analysis of the effective mass	ERATO-SORST JST 1, MSL Tokyo Inst. Tech. 2, Kyushu Inst.Tech. 3, Nagoya Univ. 4, FCRC Tokyo Inst. Tech. 5　* Hidenori Hiramatsu 1, Maiko Kikuchi 2, Hiroshi Yanagi 2, Toshio Kamiya 1,2, Kazushige Ueda 1,3, Hiromichi Ohta 1,4, Masahiro Hirano 1,5, Hideo Hosono 1,2,5
	14	Characterization of Defects in SrTiO3 and TiO2 Crystal by Positron Annihilation	Tsukuba Univ. 1,NIMS 2　*Narita Kouki 1,Uedono Akira 1,Chikyow Toyohiro 2,Imai Motoharu 2
	15	Color of SrTiO3	Univ. Tokyo 1, Shinkosha 2, Univ. Tsukuba 3　*Ohnishi Tsuyoshi 1, Mochizuki Keisuke 2, Yonezawa Takuzo 2, Uedono Akira 3, Lippmaa Mikk 1
	16	Pulsed Laser Deposition: Oxygen in oxide targets	Univ. Tokyo　*Ohnishi Tsuyoshi, Lippmaa Mikk
	17	Photoconductivity of defect-induced SrTiO3	Univ. of Tokyo 1, 2 , Shinkosha 3　*Y. Urata 1, T. Ohnishi 2 , H. Yamamoto 3, T. Ishii 3, S. Kawaminami 3, M. Lippmaa 2
6.3 Oxide Electronics
September 7 10:00〜18:00
7a-ZT-　/ II
▲	1	Thickness dependent structure and magnetization of Bi(Fe1-xMnx)O3 (x=0.1, 0.3, 0.5) thin films	Ins. Laer Eng., Osaka Univ. 1, Ins. Sci. and Ind. Res., Osaka Univ. 2　Rana Dhanvir 1, Iwao Kawayama 1, Murakami Hironaru 1, Masayoshi Tonouchi 1, Yanagida Tsuyoshi 2, Tanaka Hidekazu 2, Kawai Tomoji 2
	2	Magnetic and Electric Properties of Photo-induced magnet Al0.2Ru0.8Fe2O4 spinel ferrite thin films(II)	Osaka Univ. ISIR-Sanken 1, Univ. of Tokyo Dept. of Bioengneering 2　*Teruo Kanki 1, Yasushi Hotta 1, Naoki Asakawa 1, Toshio Kawahara 1, Hitoshi Tabata 2, Tomoji Kawai 1
	3	Effects of MgO buffer layers for the deposition of (AlRuFe)3O4 films on GaAs substarte	ISIR, Osaka Univ.1, GSE, Osaka Univ.2, Univ. of Tokyo3　T. Kawahara1, T. Kanki1, Y. Hotta1, N. Asakawa1, T. Kawai1, Y. Terai2, Y. Fujiwara2, H. Tabata3
	4	Preparation of Pr or Tb-Mg doped CaSnO3 thin films by RF sputtering method	Kyusyu Inst. Tech. 1　*Katsuhiko Goto 1,Yutaka Nakachi 1,Kazushige Ueda 1
	5	P-type operation of NiO electric double layer transistor	IMR, Tohoku Univ. 1, JST-CREST 2　*Shimotani Hidekazu 1,2, Suzuki Hirotaka 1, Ueno Kazunori 1, Kawasaki Masashi 1,2, Iwasa Yoshihiro 1,2
		Break 11:15〜11:30
△	6	Insulator-to-superconductor transition of SrTiO3 single crystal by electric double layer gating	IMR Tohoku Univ 1. Center for Low Temp. Sci. Tohoku Univ. 2, CREST-JST 3　*Kazunori Ueno 1, Nakamura Shintaro 2, Shimotani Hidekazu 1, Ohtomo Akira 1, Nojima Tsutomu 2, Kimura Noriaki 2, Aoki Haruyoshi 2, Iwasa Yoshihiro 1 3, Kawasaki Masashi 1 3
△	7	The temperature dependence of device characteristics of the conducting polymer / oxide semiconductor Schottky junction	IMR Tohoku Univ. 1, JST-CREST 2　Nakano Masaki 1, Fukumura Tomoteru 1, Ueno Kazunori 1, Tsukazaki Atsushi 1, Gunji Ryosuke 1, Yamada Yoshinori 1, Ohtomo Akira 1, Kawasaki Masashi 1,2
△	8	Resistance switching and voltage polarity dependent forming process in Co oxide	NRI-AIST 1, Adv. Mat. Res. Labs., Sharp Corp. 2, CERC-AIST 3, Grad. Sch. Frontier Sci., Univ. Tokyo 4　*H. Shima 1, F. Takano 1, Y. Tamai 2, H. Muramatsu 1, H. Akinaga 1, I. Inoue 3, H. Takagi 3,4
△	9	The design and control of current path in oxide resistance switching device	Univ. of Tokyo 1, CREST-JST 2　Fujiwara Kohei 1, Nakamura Yoshinobu 1, Takagi Hidenori 1,2
△	10	Local anodic oxidation of a nano metal channel and its relation to the resistance switching effect	Univ. Tokyo 1, Univ. Paris-sud 2, CREST-JST 3　*Konno Yosuke 1, Fujiwara Kohei 1, Nakamura Yoshinobu 1, Marcelo.J.Rozenberg 1,2, Takagi Hidenori 1,3
	11	Analysis of filamentary conduction in Re-RAM devices of binary oxide single crystal	Univ. Tokyo 1,CREST-JST 2　* Nemoto Takumi 1,Fujiwara Kohei 1,Tomita Hiroshi 1,Nakamura Yoshinobu 1,2 Takagi Hidenori 1,2
		Lunch 13:00〜14:00
7p-ZT-　/ II
	1	Young Scientist Award for the Presentation of an Excellent Paper Internal Photoemission Characterization of SrRuO3/Nb:SrTiO3 (100) Schottky Junctions	Dept. Advanced Materials Science, Univ. Tokyo 1, JST 2　Yasuyuki Hikita 1, Tomofumi Susaki 1, Hidenori Takagi 1, Harold Y. Hwang 1,2
△	2	Evaluation of physical properties of SrTiO3 Field Effect Transistor at ultralow temperatures	Univ. of Tokyo 1, CERC-AIST 2, RIKEN 3　*Tomita Hiroshi 1,2, Nakamura Hiroyuki 1,2, Matsumura Ryota 1, Inoue Isao 2, Akimoto Hikota 3, Kono Kimitoshi 3, Hasegawa Tatsuo 2, Tokura Yoshinori 2, and Takagi Hidenori 1,2
△	3	Photoconducting Properties of SrTiO3 Thin Films	Univ. of Tokyo 1,JST 2　*Yusuke Kozuka 1,Tomofumi Susaki 1, Harold Y. Hwang 1,2
△	4	Dopant effect for atomic structure of SrTiO3 surface	Department of Advanced Materials Science The University of Tokyo 1,Institute for Solid State Physics The University of Tokyo 2,Institute of Engineering Innovation The University of Tokyo 3　*Eiki Kawase 1,Tsuyoshi Ohnishi 2,S.-Y.Choi 3,Naoya Shibata 3,Teruyasu Mizoguchi 3,Yuuichi Ikuhara 3, Takahisa Yamamoto 1
△	5	Electrical Properties of Au-SrTiO3 Junction under Ultraviolet Irradiation	Univ. Tokyo 1,JST 2　*Nakayama Motoshi 1,Kozuka Yusuke 1,Hikita Yasuyuki 1,Susaki Tomofumi 1,Harold Y. Hwang 1,2
△	6	Characterization of SrTiO3-SrO solid-solution films grown by combinatorial pulsed-laser deposition	IMR Tohoku Univ. 1,JST-CREST 2　Okude Masaki 1,Ohtomo Akira 1,Kawasaki Masashi 1,2
△	7	The modulation of Schottky barrier height for La0.6Sr0.4MnO3/SrTiO3 by controlling terminating layers	The University of Tokyo 1,2 and JST CREST 3　*Makoto Minohara 1, Ryutaro Yasuhara 2, Hiroshi Kumigashira 2,3, and Masaharu Oshima 1-3
		Break 15:45〜16:00
△	8	Metal electrode dependence of I-V characteristics in metal/Pr0.7Ca0.3MnO3 Schottky contacts	The Univ. of Tokyo 1, MSL, Tokyo Inst. of Tech. 2, Inst. for Solid State Physics 3, Graduate School of Frontier Sciences, the Univ. of Tokyo 4, JST-CREST 5　*Harada Takayuki 1, Tsubouchi Kenta 1, Ohkubo Isao 1, Kumigashira Hiroshi 1,5, Ohnishi Tsuyoshi 3, Katayama Masao 2,5, Matsumoto Yuji 2,5, Lippmaa Mikk 3, Koinuma Hideomi 4,5, Oshima Masaharu 1,5
△	9	Thermoelectric properties of vanadate Mott quantum wells with hole doping by coupling to a proximate polar surface reconstruction	Univ. of Tokyo 1, JST 2　* Higuchi Takuya 1, Hotta Yasushi 1, Susaki Tomofumi 1, Harold Y. Hwang 1, 2
△	10	Electronic state of ferromagnetic semiconductor LaNi1-xMnxO3 epitaxial films studied by synchrotron-radiation photoemission spectroscopy	The Univ. of Tokyo 1, Tokyo Inst. of Technology 2, Graduate School of Frontier Sciences, the Univ. of Tokyo 3, CREST-JST 4 　*Kitamura Miho 1, Ishihara Toshihiro 1, Ohkubo Isao 1, Horiba Koji 1,4, Kumigashira Hiroshi 1,4, Matsumoto Yuji 2,4, Koinuma Hideomi 3,4, Oshima Masaharu 1,4
△	11	Effect of Oxygen Annealing on the Transport and Magnetic Properties of LaMnO3 thin films	Dept. of Advanced Materials Science, Univ. of Tokyo 1, JST 2　Takeaki Yajima 1, Yasuyuki Hikita 1, Jong Hyun Song 1, Harold Y. Hwang 1,2
△	12	Properties of Ca(Ru, M)O3 (M=3d transition metals) epitaxial films fabricated by spin-coat technique	Aoyamagakuin Univ.1, NIMS 2, KFT 3, Kobe Univ. 4　Ogawara Masaharu 1, Mizusaki Souirirou 1, Taniguchi Takashi 1, Nagata Yujirou 1, Ozawa Tadashi 2, Noro Yoshihiko 3, Samata Hiroaki 4
▲△	13	Theoretical Study of Thickness Dependence of Absorption Spectra, Electronic and Electrical Properties of Anatase TiO2 (001) Surface	Dept. Appl. Chem., Tohoku Univ. 1、NICHe, Tohoku Univ. 2　Chen Lv 1, Kei Ogiya1, Agalya Govindasamy1, Riadh Sahnoun1, Michihisa Koyama1, Hideyuki Tsuboi1, Nozomu Hatakeyama1, Akira Endou1, Hiromitsu Takaba1,Momoji Kubo1, Carlos A. Del Carpio1, Akira Miyamoto2, 1
△	14	Work functions of Mott insulators estimated using Schottky junctions	CERC-AIST 1, CREST-JST 2, IMR-Tohoku Univ. 3, Univ. of Tokyo 4　*Nakamura Masao 1,2, Sawa Akihito 1,2, Yamada Hiroyuki 1,2, Akoh Hiroshi 1,2, Kawasaki Masashi 1,3, Tokura Yoshinori 1,4
△	15	Soft X-ray magnetic circular dichroism of ilmenite-hematite solid solution epitaxial thin films	Kyoto Univ. 1, JASRI/SPring-8 2　*Hojo Hajime 1, Fujita Koji 1, Tanaka Katsuhisa 1, Hirao Kazuyuki 1, Nakamura Tetsuya 2
6.4 Novel Materials for Thin Films
September 6 9:00〜18:30
6a-H-　/ II
△	1	Breakdown characteristics of SiCN films on nitrided Si substrate	Kyushu Inst. of Tech　*Ikuhiro Nakamura, Yuji Hayashi, Tetsuhiro Ikuta, Akira Izumi
△	2	Electrical properties of AlSiO film	Osaka Univ. 1　*Komatsu Naoyoshi 1,Matsunouchi Keiko 1,Kimura Chiharu 1,Aoki Hidemitsu 1,Sugino Takashi 1
△	3	Synthesis and Characterization of Yttriumaluminate(YAlO)Film	Osaka Univ.1　*Matsunouchi Keiko 1,Komatsu Naoyoshi 1,Kimura Chiharu 1,Aoki Hidemitu 1,Sugino Takashi 1
△	4	SiCN coating film for the various metals prepared by HWCVD method - Examination of corrosion resistance -	Kyushu Inst. of Tech 1, Toyo stainless polish industry Co.Ltd.2　*Yuji Hayashi1, Tetsuhiro Ikuta1, Yutaka Kadotani2, Akira Izumi1
△	5	Characteristics of Substrate Current using Unbalanced Magnetron Sputtering Assisted by Inductively Coupled Plasma	Hiroshima Inst. of Tech.　*Eboshi Ryo, Muraoka Yuuki, Kurokawa Shigeo, Tachibana Akihiro, Hasui Yuuki, Kawabata Keishi
△	6	Influence of Initial Growth Process on HAp Thin Film by Surface Treatment	Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology 1　*Takao. Kobayashi 1, Wakana. Hara 1, Yuuzaburou. Ono 1, Mamoru. Yoshimoto1
		Break 10:30〜10:45
△	7	Influence of Substrate Surface Condition on the Electronic State of Molybdenum Disulfide Thin Film	Dept. Appl. Chem., Tohoku Univ. 1, NICHe, Tohoku Univ. 2　Tasuku Onodera 1, Yusuke Morita 1, Riadh Sahnoun 1, Michihisa Koyama 1, Hideyuki Tsuboi 1, Nozomu Hatakeyama 1, Akira Endou 1, Hiromitsu Takaba 1, Momoji Kubo 1, Carlos A. Del Carpio 1, Akira Miyamoto 2,1
△	8	Time dependence of internal stress in H4 optical thin film(2)	Tokai Univ. 1,SHINCRON 2　*Shiraishi Ran 1,Kobayashi Daisuke 1,Kuniyasu Shinsuke 1,Murotani Hiroshi 1,Wakaki Moriaki 1,Iida Yoshitaka 2
△	9	Influence of introducing argon gas of TiO2 optical thin film for IAD deposition(2)	Tokai Univ. 1,SHINCRON 2　*Kobayashi Daisuke 1,Shiraishi Ran 1,Kuniyasu Shinsuke 1,Murotani Hiroshi 1,Wakaki Moriaki 1,Iida Yoshitaka 2
	10	Research on the evaluating method of light scattering in optical thin films 2	Tokai　Univ. 1, SHINCRON CO., LTD.2　Obinata Tetsuro 1, Murotani Hiroshi 1, Wakaki Moriaki 1, Iida Yoshitaka 2
	11	Change of optical characteristic and film structure of TiO2 optical thin film for UV irradiation II	Tokai Univ. 1, Fine Crystal 2　*Tsubokawa Masaru 1, Murotani Hiroshi 1, Kaite Takashi 2, Wakaki Moriaki 1
		Lunch 12:00〜13:00
6p-H-　/ II
	1	Adhesion fracture of Au films mixed with Si	Kanto　Gakuin　Univ.　Hosaka Tetsuya1
	2	Depositions of Zr-Cu binary amorphous films by sputtering and film structure	Osaka Univ.JWRI. 1,Tohoku Univ.IMR. 2　*Fujita Junji 1,Kawabata Kenshi 1,Serikawa Tadashi 1,Kondoh Katsuyoshi 1,Kimura Hisamichi 2,Inoue Akihisa 2
	3	Evaluation of new Ru complex as CVD precursor	UBE Industries, Ltd.　*Kadota Takumi 1, Hasegawa chihiro 2, Kanato Hiroki 3, Nihei hiroshi 4
	4	Fabrication of thin films composed of star-shaped five-fold symmetrical molybdenum grains on a localized area	AIST 1　*Shimizu Yoshiki 1, Sasaki Takeshi 1, Koga Kenji 1, Koshizaki Naoto 1
	5	Effect of O2 injection time into sputtering gas on the epitaxial orientation of Rh thin fi lm sputtered on A-plane sapphire	Kitami Institute of Technology　*Kiyohiko Kato,Katsutaka Sasaki,Yoshio Abe
	6	A Formation Method of Large Area Graphene Sheets on SiO2/Si Substrate	Fukui Univ. 1, Kyusyu Univ. 2　*Kosuke Iwao 1, Yamamoto Akio 1, Hashimoto Akihiro 1, Tanaka Satoru 2
	7	Change of surface morphology and resistivity of Ag-Cu films by annealing	Kitami Inst. of Tech.　*Minamide Yu 1, Sugawara Keita 1, Kawamura Midori 1, Kato Kiyohiko 1, Abe Yosio 1, Sasaki Katsutaka 1
	8	Evaluation of thermal conductivity of Cu film and Polyimide film by a periodical heating thermoreflectance method	Kobelco Res.Inst. 1, Kobe Steel. 2　Miyake Syugo 1, Miyake Aya 2, Takamatsu Hiroyuki 2, Ikeda Kenichi 1
	9	Effects of intermediate layer films synthesized using CVD technique operated under atmosphere for applying high sensitive SPR sensor	Nagaoka Univ. of Tech. 1　*Kishimoto Shinichi 1, Ohshio Shigeo 1, Saitoh Hidetoshi 1
	10	Cross-sectional structure of interface between ceramic film and substrate	Nagaoka Univ. of Tech. 1　*Morimoto Hiromi 1, Kawaguchi Shinnosuke 1, Ohshio Shigeo 1, Saitoh Hidetoshi 1
		Break 15:30〜15:45
	11	Preparation and dielectric property of titanate nanosheet electrodes	Kumamoto Univ. 1, SANYO Eelectric Co., Ltd. 2　*Ida Shintaro 1, Asai Syohei 1, Matsumoto Yasumichi 1, Nishimura Koichi 2, Umemoto Takashi 2, Nonoue Hiroshi 2
	12	Evaluation of amorphous SiO2 film by using surface plasmon resonance	Nagaoka Univ. of Tech. 1　*Konishi M. 1, Kishimoto S. 1, Ohshio S. 1, Saitoh H. 1
	13	Structure analysis of TiO2 film using surface plasmon resonance	Nagaoka Univ. Tech. 1　Nagao Tatsuya 1. Kishimoto shinichi 1. Ohshio Shigeo 1. Saitoh Hidetoshi 1
	14	Spectroscopic ellipsometry analysis of multilayered TiO2-Ag thin films	JFCC1,NIT2, HORIBA, Ltd.3 　L. Miao *1, T.Jiang2, S.Tanemura2, M. Tanemura1, N. Nabatova-Gabain3
	15	Optical Properties of Mg-Ni Thin Films Prepared by Alternate Deposition of Mg and Ni Film	Niigata Univ. 1.　*Hirata Makoto 1.Aikoh Takashi 1.Shimizu Hidehiko 1.Maruyama Takeo 1.Iwano Haruo 1.Kawakami Takahiro 1.
	16	Examination of Optical Thin Films by Sputter Beam Deposition Method	Niigata Univ. 1　*Nagahama Daisaku 1, Aikoh Takashi 1, Hirata Makoto 1, Shimizu Hidehiko 1, Maruyama Takeo 1, Oka Tetsuo 1, Iwano Haruo 1
	17	Index control of Al2O3 optical film	Optical Products Operationsn, CANON Inc. 1　*Banno Keisui 1, Otani minoru 1
	18	Optical losses of fluoride thin films at 193nm	Optical Products Operations, CANON INC. 1　*Kuwabara Seiji 1,Banno Keisui 1,Otani Minoru 1
	19	BiOx films prepared by reactive rf magnetron sputtering and its optical response to laser irradiation (II)	Tokai Univ. 1, Spinet Inc. 2　Kamimura Takahisa 1,*Okimura Kunio 1,Gotoh Hironori 2
	20	Optical Properties of Molybdenum Oxide Thin Films Prepared by Reactive Sputtering	Meiji Univ. 1　*Nakatsuru Kazuyuki 1,Koichi Nakagawa 1,Noboru Miura 1,Setsuko Matsumoto 1,Ryotarou Nakano 1,Hironaga Matsumoto 1
	21	Optical Properties of Au-doped V2O5 Thin Films Prepared by Reactive Sputtering	Meiji Univ. 1　*Kazumi Chijiwa 1, Kouichi Nakagawa 1, Noboru Miura 1, Setsuko Matsumoto 1, Ryoutarou Nakano 1, Hironaga Matsumoto 1
6.4 Novel Materials for Thin Films
September 7 9:00〜18:30
7a-H-　/ II
	1	Effect of Nitrogen Doping on Bonding State of ZnO thin films	1Nanomaterials and Nanomanufacturing Research Center, 2Department of Mechanical Engineering 　M. Hirai1 and A. Kumar1,2
	2	A hydrogen plasma irradiation effect about conductivity of ZnO thin films	Toyo Univ. 1,Microdenshi 2,Consultant Office PTC 3　*Sata Youhei 1,Kondo Yusuke 1,Kashiwagi Kunihiro 1,Yosida Yasuhiko 1,Takizawa Tutomu 2,Sakamoto Yuichi 3
	3	Influence of Impurities on the Properties of In-Zn-O Transparent Conductive Oxide Films	Tokushima Univ.1, Takuma Nat. Col. of Tech.2　*Kikuo Tominaga 1,Michio Mikawa 2, Kenji Inoue 1, Takashi Tsuduki 1
	4	UV Photodetection Properties of β-Ga2O3 Thin Films Prepared on Ga2O3 Substrates by Sol-Gel Method	Ishinomaki Senshu Univ. 1, Nippon Light Metal 2　*Kokubun Yoshihiro 1, Natori Koki 1, Nakagomi Shinji 1, Arai Naoki 2, Ohira Shigeo 2
	5	Preparation of (Ga1-xInx)2O3 Thin Films by Sol-Gel Method	Ishinomaki Senshu Univ.　*Kokubun Yoshihiro, Abe Torataro, Suzuki Yugo, Nakagomi Shinji
		Break 10:15〜10:30
	6	Electric properties of c-axis oriented hydroxyapatite thin film.	B.O.S.T., Kinki Univ. 1, CREST-JST 2, Wakayama Pref. C.R.E.A.T.E. of the JST 3　*Nishikawa Hiroaki 1,2,3, Homma Hisayuki 1,2, Kusunoki Masanobu 1,2,3, Hontsu Shigeki 1,2,3
	7	Preparation of transparent electrically conductive film based on phosphate glass	Chubu Univ.　*Kawachi Yuya 1,Tahashi Masahiro 1,Goto Hideo 1,Ido Toshiyuki 1
	8	Preparation and analysis of CuGaO2 films prepared by the RF magnetron sputtering.	Waseda Univ. 1　*Takeuchi Norikazu 1,Ishikawa Hiroki 1,Takeuchi Toshio 1,Horikoshi Yosiji 1
	9	Properties of NiO thin films prepared by metal organic deposition method	Nagoya Inst. Tech. 1　Issei Tsukamoto 1, Shota Sugiyama 1, Shogo Wada 1, Shingo Ono 1, *Yo Ichikawa 1
	10	Study of low-temperature heteroepitaxy growth of layered compound semiconductor GaS film	Tokyo National College of Techno. 1, R&D Sanvac CO. Ltd. 2　*Tanaka Yasuyuki 1, Ito Hiroshi 1, Ohyama Masanori 2
	11	Development of Capable Electrets(III) 〜Stability of Surface Potential at Cover Structure with Organic Spin-On-Glass Layer〜	SANYO Electric Co., Ltd. 1　*Murayama Yoshiki 1, Matsubara Naoteru 1, Naruse Yohko 1, Mabuchi Katsuji 1, Izumi Makoto 1, Honma Kazunari 1, Hirano Hitoshi 1
		Lunch 12:00〜13:00
7p-H-　/ II
▲	1	Composition Dependence of Polycrystalline Quality of YSZ Thin Film Deposited on a Glass Substrate by Reactive Sputtering	Japan Adv. Inst. of Sci. & Tech. (JAIST)　*Sukreen Hana 1, Kensuke Nishioka 1, Susumu Horita 1
	2	Thermal Barrier Coatings for Gas Turbine Engine Applications	1Department of Mechanical Engineering, 2Nanomaterials and Nanomanufacturing Research Center, University of South Florida, 3Advanced Materials Processing and Analysis Center and Department of Mechanical Materials and Aerospace Engineering, University of Central Florida, 　R. Nandur1, M. Hirai2, A. Kumar1,2, and Y. H. Sohn3
	3	Electrical properties of the CeO2 films prepared by MOCVD	Hosei Univ.1,Semiconductor Process Laboratory Co., Ltd.2　*Nakamura Keiichi 1,Ogawa Masatsugu 1,Suda Masakatsu 1,Murakami Takahisa 1,Otsuka Kentaro 1,Suzuki Setsu 2,Yamamoto Yasuhiro 1
	4	Evaluation of CeO2 films prepared by MOCVD based on the etching characteristics	Hosei Univ. 1,Semiconductor Process Laboratory Co., Ltd. 2　*Ogawa Masatsugu 1,Nakamura Keiichi 1,Suda Masakatsu 1,Otsuka Kentaro 1,Murakami Takahisa 1,Suzuki Setsu 2,Yamamoto yasuhiro 1
	5	Optical properties of sol-gel SiO2 films prepared by low temperature sintering	Graduate School of Engineering Tokai University　Yanzhen Jin、Hirosi Murotani、Moriaki Wakaki
	6	Optical property of Zirkonia Thin Film prepared by low-temperature synthesizing	Tokai Univ. 1　Ina Hokuto 1,Muirotani Hiroshi 2,Wakaki Moriaki 3
	7	Electron-Beam-Induced Orientation-Selective-Epitaxial Growth of CeO2(100)/Si(100)	Iwaki Meisei Univ. 1　*Inoue Tomoyasu 1, Nakata Yoshiyuki 1, Shida Shigenari 1
	8	Preparation of Niobate Thin Films using Sol-Gel CVD.	Takamatsu National College of Technology 1　*Yuichiro Tada 1,Okano Hiroshi 1
	9	Formation of oxide thin layers by means of MOCVD with novel Niobium and Tantalum complexes	TOSOH CORP. 1,SAGAMI CHEMICAL RESEARCH CENTER 2,TOKYO INSTITUTE OF TECHNOLOGY 3　*Hirokazu Chiba 1,Taishi Furukawa 1,2,Ken-ichi Tada 2,Tetsu Yamakawa 2,Hiroshi Funakubo 3,Noriaki Oshima 1,2
	10	Preparation of Platinum and Palladium Composite Oxide Thin Films Deposited by Reactive Sputtering	Meiji University　*Iwai Yuki 1, Nakagawa Koichi 1, Miura Noboru 1, Matsumoto Setsuko 1, Nakano Ryotaro 1, Matsumoto Hironaga 1
	11	Substrate Temperature Dependence of Bi2O3-TiO2 Thin Films Prepared by RF Sputtering Method	Meiji Univ.　*Ohba Kazuma 1,Nakagawa Kouichi 2,Iwai Yuuki 3,Miura Noboru 4,Matsumoto Setsuko 5,Nakano Ryoutaro 6,Matsumoto Hironaga 7
	12	Correlation between the density of TiO2 films and their mechanical properties	OPTO-SOLTEC INC. 1, Kobe Design Univ. 2　Inomata Takashi 1,Aoki Tomonori 1,Ogura Shigetaro 2
		Break 16:00〜16:15
	13	Computational fluid dynamics simulation of the atmospheric pressure halide CVD reactor for the flower-like InN	Grad. School of Sci. & Tech. Shizuoka Univ. 1,Shizuoka Univ. 2　*Sugiura Haruka 1,Sakamoto Naoki 2,Wakiya Naoki 2,Nakamura Takato 2,Suzuki Hisao 1,2
	14	Depositions of TixAlySizN or TixSiyN super hard films deposited by reactive rf magnetoron sputtering using alloy targets.	Aoyama Gakuin Univ. 1,National Inst. of Advanced Industrial Science and Technology 2　*Takahashi Kosuke 1,Miyamura Amika 1,Hattori Koitiro 2,Seino Yutaka 2,Sato Yasushi 1,Shigesato Yuzo 1
	15	Zn3N2 thin film growth on sapphire substrate by MOCVD	Polytechnic Univ.　Kazuhiko Kakishita, *Masaomi Mutou and Toshikazu Suda
	16	Electric properties of AlN thin films prepared by atmospheric pressure CVD.	Shizuoka Univ.　*Iwane Hiroki 1, Sakamoto Naoki 1, Wakiya Naoki 1, Nakamura Takato 1, Suzuki Hisao 1,
	17	Improved High Durability of All-Solid-State Switchable Mirror using Aluminum Buffer Layer	AIST　*Kazuki Tajima 1, Yasusei Yamada 1, Shanhu Bao 1, Masahisa Okada 1, Kazuki Yoshimura 1
	18	Estimation of the optical properties for WO3 thin films injected with protons during deposition	AIST 1　*Yamada Yasusei 1,Tajima Kazuki 1,Bao Shanhu 1,Okada Masahisa 1,Yoshimura Kazuki 1
	19	Hydrogenation of Pd-capped Magnesium Thin Film at room temperature	AIST 1　Kazuki Yoshimura 1, Shanfu Bao 1, Kazuki Tajima 1, Yasusei Yamada 1,Masahisa Okada 1
▲	20	Effects of substrate temperature on hydrogen content of Ta2O52 thin films prepared by reactive sputtering in an atmosphere of water vapor	Kitani Inst. Technol.　*Peng Fei 1, Abe Yoshio 1, Kawamura Midori 1, Sasaki Katsutaka 1, Itoh Hidenobu 1,Suzuki Tsutomu 1.
	21	Nickel oxyhydroxide thin films prepared by reactive sputtering using water vapor	Kitami Inst. Techol.　*Hideaki ueta 1,Yoshio Abe 1, Midori Kawamura 1,Kiyohiko Kato 1, Katsutaka Sasaki 1, Hidenobu Itoh 1
6.5 Surface Physics and Vacuum
September 4 9:00〜12:00
4a-ZQ-　/ II
	1	Young Scientist Award for the Presentation of an Excellent Paper Tip-sample distance control using photothermal actuation of a small cantilever for high-speed AFM	Kanazawa Univ. 1, JST-CREST 2　*Yamashita Hayato 1, Uchihashi Takayuki 1,2, Kodera Noriyuki 2, Miyagi Atsushi 1, Yamamoto Daisuke 2, Ando Toshio 1,2
	2	JJAP Paper Award High-speed AFM for visualizing dynamic biomolecular processes	Kanazawa University　Toshio Ando, Takayuki Uchihashi, Noriyuki Kodera, Atsushi Miyagi, Hayato Yamashita and Mitsuru Sakashita
	3	Gd growth on Si(111) studied by STM	Osaka Electro-Communication Univ.　*Shigeta kazuya 1,Igarashi tadanori 1,Yasue tuneo 1,Koshikawa takanori 1
	4	Real-Space observation of electronic structure in 2D Fe-nanodots on Au(111) by Scanning Tunneling Microscope	The University of Tokyo 1,RIKEN 2　*Inoue Hirotaka 1,Katayama Satoshi 1,Shiraki Susumu 1,Takagi Noriaki 1,Kawai Maki 1,2
	5	Magnetic properties of Ni nanostructures on vicinal Au(111) surface	The University of Tokyo 1, RIKEN 2, JASRI 3　Masaaki Hirose 1, Brianto Usman 1, Susumu Shiraki 2, Masashi Nantoh 2, Maki Kawai 1,2, Tetsuya Nakamura 3, Hitoshi Osawa 3, Takayuki Muro 3
		Break 10:30〜10:45
	6	Interpretation using the z-model for the phosphorus-based III-V semiconductor surface (II)	Shizuoka Univ. 1, The Univ. of Exeter 2　*Shimomura Masaru 1, Ichikawa Daisuke 1, Srivastava G.P. 2, Fukuda Yasuo 1
▲	7	Sn adsorption on Si(100) surface studied by STM and CAICISS	Toyota Tech. Inst., Nano High-Tech Rec. Center　*Visikovskiy Anton, Shibata Hideyuki, Yoshimura Masamichi, Ueda Kazuyuki
	8	Number-of-layers distribution in graphene layers formed on SiC(0001)	NTT Basic Research Labs. 1　*Hibino Hiroki 1, Nagase Masao 1, Kageshima Hiroyuki 1, Maeda Fumihiko 1, Kobayashi Yoshihiro 1, Yamaguchi Hiroshi 1
	9	Conductance measurements on Pt-group metal atomic contact under electrochemical potential control	Hokkaido Univ. 1, JST PRESTO. 2　　Tatsuya Konishi1, *Manabu Kiguchi 1,2, Kei Murakoshi 1
	10	AFM imaging of Kondo effect II	Department of Applied Physics, Osaka Univ1, Department of Physics, Osaka University 2　*Fukumura Syuji 1,Minamitani Emi 1,Do Ngoc Son 1,Mahmudur Rahman 1,Nakanishi Hiroshi 1,Wilson Agerico Diño 2,Kasai Hideaki 1
6.5 Surface Physics and Vacuum
September 5 9:00〜18:45
5a-ZC-　/ II
△	1	Real-time monitoring of electron-stimulated reaction process on Si(001)	Yokohama Nat'l Univ. 1, Nat'l Defense Academy 2　*Ohno Shinya 1, Takizawa Junichi 1, Koizumi Junya 1, Mitobe Fumitake 1, Tamegai Ryota 1, Suzuki Takanori 2, Shudo Kenichi 1, Tanaka Masatoshi 1
	2	Two Layer Structure of Water Film Adsorbed on Silicon Thermal Oxide Thin Film.	National Inst. of Advanced Industrial Science and Technology (AIST) 1　Kurokawa Akira 1, Odaka Kenji 1
	3	Oxidation reaction kinetics of a Si1-xCxalloy layer grown on p-Si(001) surface: Behavior of adsorbed oxygen at RT	Tohoku Univ. 1　Takakuwa Yuji 1, Ogawa Shuichi 2
	4	Time evolution of O1s & Si2p photoelectron spectra for oxidation on Si(111)-7x7 at 300K	Japan Atomic Energy Agency　Akitaka Yoshigoe, Yuden Teraoka
△	5	Rapid initial oxidation of Si(110)-16×2 surface and surface reconstruction	CIR, Tohoku Univ. 1, Japan Atomic Energy Agency 2　Hideaki Togashi 1, Yoshihisa Yamamoto 1, Seiishi Goto 1, Yuya Takahashi 1, Takuya Nakano 1, Atsushi Konno 1, Maki Suemitsu 1, Hidehito Asaoka 2, Akitaka Yoshigoe 2, Yuden Teraoka 2
		Break 10:15〜10:30
	6	Electronic and optical properties of ultrahigh density Ge1-xSnx quantum dots	The Univ. of Tokyo 1, CREST-JST 2, Nagoya Univ. ESI 3　Nakamura Yoshiaki 1,2, Masada Akiko 1, Cho Sung-Pyo 2,3, Tanaka Nobuo 2,3, Ichikawa Masakazu 1,2
	7	Optical transitions between discrete levels in GeSn nano-dots studied by STM-based photo-absorption spectroscopy	Univ. of Tokyo 1, JST-CREST 2　*Naruse Nobuyasu, Mera Yutaka, Nakamura Yoshiaki, Ichikawa Masakazu, Maeda Koji
	8	Formation of ultrahigh density GaSb nanodots on Si substrates covered with ultrathin Si oxide films	The Univ. of Tokyo 1, CREST-JST 2　*Tomohiro Sugimoto 1, Yoshiaki Nakamura 1,2, Hidetaka Kasai 1, Masakazu Ichikawa 1,2
	9	Shape transition of Ge islands during Si capping and formation of Ge nano-hat	Tohoku Univ. CIR 1　*Goto Seiichi 1, Alguno Arnold 1, Suemitsu Maki 1
▲	10	Spontaneous formation of nanorings during selective chemical etching of Si-capped Ge islands	Tohoku Univ. CIR 1　*Alguno Arnold 1, Goto Seiichi 1, Suemitsu Maki 1
	11	Formation and evaluation of iron dots on gallium nitride	ISIR Osaka Univ. 1　*Hayakawa Satoko 1,Honda Yuya 1,Kimura Shigeya 1,Hasegawa Shigehiko 1,Asahi Hajime 1
		Lunch 12:00〜13:00
5p-ZC-　/ II
	1	Structural Analysis of Crystal Surfaces by Reflection High-Energy Electron Diffraction Patterns: The Si(111)7×7 Surface	Japan Women's　Univ.1　*Tomoko Minami 1,Yuki Yamagata 1,Ayahiko Ichimiya 1
	2	Structural Analysis of the Si(111)√21×√21-(Au,Ag) Surface by Reflection High-Energy Electron Diffraction Patterns	Japan Women's Univ 1　*Nozomi Kido 1,Ayahiko Ichimiya 1
	3	Growth process observation of Sb on In/Si (111)	OECU1, JASRI2, RIKEN3, JAEA4　*M.Hashimoto1, F-Z.Guo2, M.Suzuki1, M.Ueda1, Y.Mathuoka1, T.Kinoshita2, K.Kobayashi2, S.Shin3, M.Oura3, T.Takeuchi3, Y.Saito4, T.Matsushita2, T.Yasue1 and T.Koshikawa1
	4	Observation of magnetic thin films with nonmagnetic layers by spin-polarized LEEM (SPLEEM)	Fundamental Electronics Research Inst., Osaka Electro-Communication Univ. 1,Department of Physics and Astronomy, Arizona State Univ. 2　*Suzuki Masahiko 1, Hashimoto Michihiro 1, Ueda Masato 1, Yasue Tsuneo 1, Koshikawa Takanori 1, Bauer Ernst 2
	5	Spin-polarized metastable-atom deexcitation spectroscopy of Xe/Fe(100)	Nat. Inst. Materials Sci. 1, PRESTO JST 2 　*Y. Yamauchi 1, X. Sun1, M. Kurahashi 1, T. Suzuki 1,2, Z.P. Wang 1, S. Entani 1
	6	Spin polarization of benzene molecule on Fe(100) surface: study by metastable-atom deexcitation spectroscopy and electronic structure calculations	Nat. Inst. Materials Science 1, Hefei Nat. Lab. Phys. Sci. Microscale 2, Dept. Physics, USTC 3, PRESTO, JST 4　Xia Sun 1,2,3, Yasushi Yamauchi 1, Mitsunori Kurahashi 1, Taku Suzuki 1,4, Zhongping Wang 1, Shiro Entani 1
	7	Ab initio simulation of water molecules with adsorbed ions on the Fe(001) surface	ITC Univ. of Toyama 1, Faculty of Eng. Univ. of Toyama 2　*Nunomura Norio 1, Sunada Satoshi 2
	8	Adsorption and desorption hysteresis of Ar on Ag single crystals	Department of Physics, Gakushuin Univ 1,　*Shuichi Moto 1,Nozomu Hamada 1,Takashi Miura 1,Ichiro Arakawa 1,
△	9	Electronic structure of chemically stable inorganic electride C12A7:e- having a low work function	Tokyo Tech. FCRC. 1, Tokyo Tech. MSL 2, JASRI 3, NIMS 4 　*Toda Yoshitake 1, Miyakawa Masashi 1, Yanagi Hiroshi 2, Kamiya Toshio 2, Hirano Masahiro 1, Hosono Hideo 1,2, Ikenaga Eiji 3, Kim Jung Jin 3, Kobata Masaaki 3, Ueda Shigenori 4, Kobayashi Keisuke 3,4
△	10	Measurement of Surface Potential of MgO Thin Film under Ion Irradiation by Ion Scattering Spectroscopy	Graduate School of Eng., Osaka Univ. 1, Matsushita Electric Industrial Co., Ltd. 2　*Kuwayama Takeshi 1, Nagatomi Takaharu 1, Takai Yoshizo 1, Yoshino Kyohei 2, Morita Yukihiro 2, Nishitani Mikihiko 2, Kitagawa Masatoshi 2
△	11	A Computational Study on the Relationship between the Surface Structure of MgO Protecting Layer for Plasma Display Panel and Characteristics of Its Electron Emission	Dept. Appl. Chem., Tohoku Univ. 1,Adv. Sci. Mater.,Hiroshima Univ. 2,NICHe, Tohoku Univ. 3　*Kazumi Serizawa 1,Hiroaki Onuma 1,Hiromi Kikuchi 1 ,Riadh Sahnoun 1,Michihisa Koyama 1,Hideyuki Tsuboi 1,Nozomu Hatakeyama 1,Akira Endou 1,Hiromitsu Takaba 1,Momoji Kubo 1,Carlos A. Del Carpio 1,Hiroshi Kajiyama 2,Tsutae Shinoda 2,Akira Miyamoto 1,3
		Break 15:45〜16:00
	12	Observations of Ti/Al2O3 interface degradation by oxygen gettering	Tsukuba Univ. 1　Sugimura Sotaro 1,Sometani Mitsuru 1,Hasunuma ryu 1,Uedono Akira 1,Yamabe Kikuo 1
▲	13	Investigation of the Electronic Structure of Epitaxial (Ba,Sr)TiO3 Thin Film Surfaces and Their Interaction with CO2, and H2O	Fujitsu Ltd. 1, Fujistu Lab. 2, Tokyo Inst. of Tech. 3　*John D. Baniecki 1,Masatoshi Ishii 1, Kazuaki Kurihara 1, Kazunori Yamanaka 1, Tadahiro Imada 2, Nobuhiro Kin 2, Testuji Yano 3
	14	Field-ion-microscopy observation of La2-2xSr1+2xMn2O7	Hokkaido University 1, ERATO-JST 2　Sasaki Hiroki 1,Matsuyama Hideo 1,Koike Kazuyuki 1,J. -P. He 2
	15	Surface Electric Properties of Highly a-Axis Oriented SrZr0.95Y0.05O3/SrTiO3 Thin Films	Tokyo University of Science. 1　Kobayashi Yoshimasa 1,Higuchi Tohru 1,Hosono Hiroyo 1,Suzuki Yuuko 1,Hattori Takeshi 1,Tsukamoto Takeyo 1
	16	Study of hydrogen storage alloy using hydrogen microscope (SESDIM)	Toyota Technological Institute　Ueda kazuyuki
	17	Elastic Anisotropy of Co/Pt Superlattice : Ultrasonic Measurements and Density Functional Calculation	Osaka Univ. 1　*Tanei Hiroshi 1, Nakamura Nobutomo 1, Ogi Hirotsugu 1, Kusakabe Koichi 1, Hirao Masahiko 1
	18	Analysis of Chemical Cleaning Aluminum Surface	Mitsubishi Elec. 1　Kinugawa Masaru 1, Kanematsu Yasuyuki 1
	19	In-situ heating of SiC Hydrogen blistering with optical microscopy	Aichi Inst. Tech.　*Iwata Hiroyuki, Takagi Makoto, Tokuda Yutaka
	20	Quantification of substrate cleaning effects based on thin film adhesion measurement	Ashikaga Inst. Tech.　Tsukamoto Yuji 1
	21	Simulation of the collection efficiency of ions generated in a B-A gauge	AIST　*Suginuma Shigemi
	22	Application of the molecular-flow-symmetry criterion to a scattering kernel model	ULVAC Inc. 1　*Kusumoto Yoshiro 1
6.6 Probe Microscopy
September 7
7a-P13-　/ II
		Poster Session 7a-P13-1〜33　9:30〜11:30
	1	Low temperature scanning tunneling spectroscopy of Mn thin films on Au(111) surfaces	JST-PRESTO 1,Osaka Univ. 2,JST-CREST3　*Takada Masaki 1,Mishima Ryota 2,Tada Hirokazu 23
	2	Alkali metal-induced reconstruction of vicinal Au(111) surfaces	Univ. Tokyo 1, RIKEN 2　*Shiraki Susumu 1, Katayama Satoshi 1, Takagi Noriaki 1, Kawai Maki 1,2
	3	Adsorption of carbon monoxide on fcc-Fe(111) ultrathin film	AIST 1　*An Bai 1, Fukuyama Seiji 1, Yokogawa Kiyoshi 1
△	4	Tunneling diffusion of paired-hydrogen atoms on Ni(110) surface	RIKEN 1, Tohoku Univ. 2, Univ. of Tokyo 3　*Katano Satoshi 1,2, Kim Yousoo 1, Kawai Maki 1,3
	5	A competition between quantum effect and kinetics processes in Ag thin film growth on Si(111)7×7	Tokyo Institute of Technology　1　Miyazaki masaru 1,Hirayama hiroyuki 1
	6	A STM study of Ge epitaxial growth on Si(111)√3×√3-B substrates	Tokyo Inst. of Tech. 1, Tokyo Inst. of Tech. 2　*Sekiguchi Tsuka 1, Hirayama Hiroyuki 2
	7	Preparation of the single-domained Si(110)-"16x2" surface	JAEA 1　*Yamada Yoichi 1, Antoine Girard 1, Hidehito Asaoka 1
	8	Adsorption structure of Pd on Si(113) surface	Toyota Tech. Inst., Nano High-Tech res. Center 1 　*Shinsuke Hara, Masamichi Yoshimura, Kazuyuki Ueda
△	9	Geometric structures and electronic properties of alkali metals adsorbed on GaAs(110) surface	Hokkaido Univ.　Nobuyuki Ishida, Kazuhisa Sueoka
△	10	Observation of atomic dipole moment on GaAs(110) cleavage surface using NC-SNDM	R.I.E.C. Tohoku univ. 1　*Saito Akio 1, Hirose Ryusuke 1, Cho Yasuo 1
	11	Measurement of Dopant Concentration Profile by Scanning Nonlinear Dielectric Microscopy	RIEC Tohoku Univ. 1, Fujitsu Laboratories Ltd. 2　*Kenya Ishikawa 1, Koichiro Honda 2 and Yasuo Cho 1
	12	Observation of C60 Molecules on Si(111)7x7 Structure using Non-contact Scanning Nonlinear Dielectric Microscopy	RIEC, Tohoku Univ 1　Shin-ichiro Kobayashi 1, Yasuo Cho 1
	13	Observation of atomic structure of SrTiO3 insulating surface using NC-SNDM	Tohoku Univ.　Hirose Ryusuke, Cho Yasuo
△	14	Non-Contact Writing in Ferroelectric Data Storage Based on NC-SNDM	RIEC.Tohoku Univ. 1　*Tomoya Uda 1,Yoshiomi Hiranaga 1,Yasuo Cho 1
△	15	Formation of Ultimately Tiny Domain Dot with Offset Voltage Application Method	Tohoku Univ. 1　*Kenkou Tanaka 1, Cho Yasuo 1
△	16	High Speed Reading Trial Using HDD Type Ferroelectric Data Storage	RIEC. Tohoku Univ. 1　*Yuichi Kurihashi 1,Hiranaga Yoshiomi 1,Cho Yasuo 1
△	17	Probe magnetization effect on higher-order nonlinear magnetic signal and its application to non-contact measurement	Tohoku Univ. R.I.E.C　*Takahashi Kazushi1,Ishikawa Kenya1,Hiranaga yoshiomi1,Hirose ryuuske1,Endo Makoto1,Cho Yasuo1
	18	Determination of current distribution from current-induced magnetic field detected by magnetic force microscopy	CQST and Graduate School of Engineering Science, Osaka Univ. 1　*Tanaka Yuji 1, Tanaka Koichi 1, Mori Yuya 1, Abo Satoshi 1, Wakaya Hujio 1, Takai Mikio 1
	19	Magnetic domain imaging by scanning magnetoresistance microscope	Hokkaido Univ. 1　*Hisada Kenichi 1, Takezaki Taiichi 1, Sueoka Kazuhisa 1
	20	STM-induced light emission from multi-organic layer system	Institute of Applied Physics, Tsukuba Univ. 1　N. Okawa, A. Okada, K. Kanazawa, K. Hayashi, O. Takeuchi and H. Shigekawa
	21	Estimation of spatial resolution of STM-cathodoluminescence spectroscopy	The Univ. of Tokyo 1, CREST-JST 2　*Watanabe Kentaro 1, Nakamura Yoshiaki 1,2, Ichikawa Masakazu 1,2
△	22	Nano-scale Elemental Analysis on Metal Adsorbed Semiconductor Surface using SR-STM system	Osaka Univ. 1, RIKEN/SPring-8 2, ICORP (JST) 3, Osaka Prefecture Univ. 4, PRESTO(JST) 5, National Inst. for Materials Science 6　Hosokawa Hiromasa 1,2,Saito Akira 1,2,3,Takagi Yasumasa 2,Takahashi Koji 1,2,Hanai Kazuhisa 2,4,Tanaka Yoshihito 2,Kikkawa Akiko 2,Akai-Kasaya Megumi 1,5,Ishikawa Tetsuya 2,Shin Shigi 2,Kuwahara Yuji 1,2,3,Aono Masakazu 3,6
	23	2D measurement of X-ray absorption-induced Force change by means of NC-AFM -Development of XANAM-	CRC Hokkaido Univ.1,KEK-PF2, CREST-JST3　*Shushi Suzuki1,3, Motohiro Nakamura1, Kumiko Kinoshita1, Yuichiro Koike2, Keisuke Fujikawa1, Wang Jae Chun1,3, Masaharu Nomura2, and Kiyotaka Asakura1
	24	Control of the diameter of carbon nanotube SPM probes	Toyota Tech. Inst.　Yusuke Matsuura, *Masamichi Yoshimura, Kazuyuki Ueda
	25	Growth-direction dependence of properties of CNF probes fabricated by ion irradiation method	OLYMPUS Corp.1,Nagoya Inst.Technol2　*Kitazawa masashi1 2,Ohta Ryo1,Sugita Yoshitaka2,Tanemura Masaki2
	26	Development of MFM probe with Carbon Nanotube probe II	Daiken Chemical Co. Ltd. 1,Osaka Pref. Univ. 2,Osaka Univ. 3　Shigenobu Yamanaka 1,Takashi Okawa 1,Seiji Akita 2,Yoshikazu Nakayama 3
△	27	Fabrication of sharp W-coated AFM tip for electrostatic force spectroscopy.	Dpt. of Applied Physics, Osaka Univ.　Kinoshita Yukinori, Lee Seung Hwan, Li Yan Jun, Naitoh Yoshitaka, Kageshima Masami, Sugawara Yasuhiro
△	28	A precise control of distance between probes in multiprobe atomic force microscopy	Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, Venture Business Lab., Kyoto Univ. 2, Int'l Innovation Center, Kyoto Univ. 3, Nikon 4, CREST/JST 5　*Nobuo Satoh 1,2, Eika Tsunemi 1, Kei Kobayashi 3, Shunji Watanabe 4, Toru Fujii 4, Kazumi Matsushige 1, 2, Hirofumi Yamada 1,5
	29	Time-resolved electrostatic force detection by scanning probe microscopy	ISIR, Osaka Univ. 1, CREST JST 2　Takuya Matsumoto 1,2, Tomoji Kawai 1,2
	30	Phase Modulation Atomic Force Microscope in Constant Amplitude Mode without Instability	Dpt. of Applied Physics, Osaka Univ. 1, CREST, JST. 2 　*Yasuhiro Sugawara 1,2,Naritaka Kobayashi 1,2, Masayo Kawakami 1,2, Yan Jun Li 1,2, Yoshitaka Naitoh 1,2, Masami Kageshima 1,2
△	31	The Analysis of Q-controlled Phase Modulation AFM in Constant Amplitude Mode	Osaka Univ. 1, CREST-JST 2　*Kobayashi Naritaka 1, Yan Jun Li 1,2, Naitoh Yoshitaka 1,2, Kageshima Masami 1,2, Sugawara Yasuhiro 1,2
	32	Development of Multi-Functional High-Speed Atomic Force Microscope in CA-PM mode	Dpt. of Applied Physics, Osaka Univ. 1, CREST, JST. 2 　*Yan Jun Li 1,2, 1,2,Naritaka Kobayashi 1,2, Yoshitaka Naitoh 1,2, Masami Kageshima 1,2, Yasuhiro Sugawara
△	33	Selective Analysis of Biotin-Streptavidin Potential Barriers using High-Performance Dynamic Force Spectroscopy	Inst. of Applied Physics Univ. of Tsukuba 1, CREST JST 2　*Atsushi Taninaka 1 2, Osamu Takeuchi 1 2, Hidemi Shigekawa 1 2
6.6 Probe Microscopy
September 7
7p-P15-　/ II
		Poster Session 7p-P15-1〜26　13:00〜15:00
	1	STM imaging of Sn-phthalocyanine on HOPG	Iwaki Meisei Univ. 1　*Katsumata Shunji 1
	2	Electronic states analysis of Au25(SC6H13)18 cluster by noncontact atomic force microscopy	Tokyo Tech. 1,IMS 2,PRESTO JST 3　*T. Tanaka 1, Y. Negishi 2, T. Tsukuda 2, K. Fukui 1,3
	3	Observation of photoactive-surface phonomena of azobenzene on Pt(111) by STM III	Hokkaido Univ.1　*Morita Daiji, Doi Takeshi, Morita Ryuji, Yamashita Mikio
	4	Defect control of single-walled carbon nanotube by Scanning Tunneling Microscopy	Univ. of Tsukuba 1, NTT BRL 2　Ebine Yuta 1, Maxime Berthe 1, Yoshida Shoji 1, Taninaka Atsushi 1, Suzuki Satoru 2, Sumitomo Kouji 2, Takeuchi Osamu 1, Shigekawa Hidemi 1
	5	Single Molecular Conductance Measured by “Point Contact Method” with STM	Institute of Applied Physics,Tsukuba Univ. 1,CREST-JST 2,NRI,AIST 3, 　　*Yoshitaka Okutsu 1,2,Shoji Yoshida 1,2,Satoshi Yasuda 3,Jiro Sasaki 1,2,Tohru Nakamura 3,Osamu Takeuchi 1,2,Hidemi Shigekawa 1,2
	6	Conductance Measurement of Nano-graphene on SiC Using a Nanogap Electrode Probe	NTT Basic Research Labs.　*Nagase Masao 1, Hibino Hiroki 1, Kageshima Hiroyuki 1, Yamaguchi Hiroshi 1
	7	Tunable nanowire nonlinear optical probe for subwavelength imaging.	SONY 1, UC Berkeley 2　*Nakayama Yuri 1,2, Pauzauskie Peter 2, Radenovic Aleksandra 2, Onorato Robert 2, Saykally Richard 2, Liphardt Jan 2, Yang Peidong 2
	8	Modification and Observation of Surface Potential of Alq3 Thin Films by SNOM-KFM	RIKEN　*Kazunari Ozasa, Shigeyuki Nemoto, Takashi Isoshima, Eisuke Ito, Mizuo Maeda, Masahiko Hara
	9	Formation of a near-field probe tip in an electroless nickel plating bath with additive chloride ion	Toyo Univ.　Shuji Mononobe
	10	Development of Atomic Force Microscopy with wide-band magnetic modulation II	Osaka Univ. 1, JST-PRESTO 2　Chikamoto Takuma 1, *Kageshima Masami 1,2, Naitoh Yoshitaka 1, Sugawara Yasuhiro 1
	11	Elimination of spurious response of cantilever using magnetic excitation: an experimental study toward implementation of the time-delayed feedback control	VBL, Kyoto Univ. 1, IIC, Kyoto Univ. 2, Grad. School of Eng., Kyoto Univ. 3　*Yamasue Kohei 1,Kobayashi Kei 2,Yamada Hirofumi 3,Matsushige Kazumi 3,Hikihara Takashi 3
	12	Development of high-resolution FM-AFM operated in air or liquid (1)	Shimadzu 1, Int’l Innovation Center, Kyoto Univ. 2, Dept. of Electronic Sci. & Eng. Kyoto Univ. 3, Osaka Univ. 4, JAIST 5, Kobe Univ. 6, Kanazawa Univ. 7, JST 8　*Ohta Masahiro 1,8, Watanabe Kazuyuki 1,8, Kokawa Ryohei 1,8, Kobayashi Key 2,8, Yamada Hirofumi 3,8, Abe Masayuki 4,8, Morita Seizo 4,8, Tomitori Masahiko 5,8, Onishi Hiroshi 6,8, Arai Toyoko 7,8
	13	Small amplitude FM-AFM imaging of molecules using second resonance flexural mode	Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, Int'l Innovation Center, Kyoto Univ. 2, CREST/JST 3　*Hosokawa Yoshihiro 1, Ichii Takashi 1, Kobayashi Kei 2, Matsushige Kazumi 1, Yamada Hirofumi 1,3
	14	Development of high-resolution and low-thermal drift FM-AFM head for air/liquid environment	JST/Adv.Meas.&Analysis 1, Dept. of Electronic Sci. & Eng., Kyoto Univ. 2, Shimadzu Corp. 3, Int'l Innovation Center, Kyoto Univ. 4, Dept. of Electronic Engineering, Osaka Univ. 5　*Noriaki Oyabu 1,2, Masahiro Ohta 1,3, Kazuyuki Watanabe 1,3, Ryohei Kokawa 1,3, Kei Kobayashi 1,4, Hirofumi Yamada 1,2, Masayuki Abe 1,5, Seizo Morita 1,5
	15	Development of AFM cantilever for high accuracy nanomachining.	SII Nanotechnology Inc. 1,Seiko Instruments. 2　*Nakaue Takuya 1,Takaoka Osamu 1,Hamao Takanori 2,Watanabe Masafumi 1, Yasutake Masatoshi 1,Watanabe Naoya 1,Yasaka Anto 1
	16	Development of micro cantilever for resonance mode in liquid	SII Nanotechnology Inc.1, Niigata Univ2　M Shigeno1 , O Matsuzawa1 ,A Nihei1 , N Watanabe1 , Y Shirakawabe1 , A.Inoue1 , O.Hoshi2 ,T.Ushiki2
	17	An Innovative Two-Dimensional Grating Designed for Strict Pitch Measurements using an AFM	AIST NMIJ 1　*Kentaro Sugawara 1, Osamu Sato 1, Ichiko Misumi 1, Satoshi Gonda 1
	18	Local Hydration Structure Measurements by Dynamic Force Microscopy	JST/Adv.Meas.& Analysis 1,Dept. of Electronic Sci. & Eng. Kyoto Univ. 2, Int'l Innov. Center Kyoto Univ. 3,AIST 4　*Kimura Kenjiro 1,2,Horiuchi Takashi 2,Oyabu Noriaki 1,2,Kobayashi Kei 1,3,Hirata Yoshiki 4,Matsushige Kazumi 2,Yamada Hirofumi 1,2
	19	High-Resolution Imaging of Bacteriorhodopsin in Liquids by Frequency Modulation Atomic Force Microscopy	Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, JST/Adv. Meas. & Analysis 2, Int'l Innovation Center, Kyoto Univ. 3, AIST 4　*Takashi Horiuchi 1, Kenjiro Kimura 1,2, Kei Kobayashi 2,3, Yoshiki Hirata 4, Kazumi Matsushige 1, Hirofumi Yamada 1,2
	20	Development of a multi-probe AFM utilizing optical beam deflection method (2)	Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, Int’l Innovation Center, Kyoto Univ. 2, CREST 3　*Eika Tsunemi1,Nobuo Satoh 1,Kei Kobayashi 2,Kazumi Matsushige 1,Hirofumi Yamada 1,3
	21	FM-mode potential measurement of insulating surface in aqueous solution	ISIR, Osaka UNiv. 1　*Takuya Matsumoto 1, Tomoji Kawai 1
	22	DNA observation with STM in a solution II	Osaka Univ. 1.　Hiroshi Matsuura 1, Kohji Suzuki 1, Akihiko Takagi 1, Takuya Matsumoto 1, Tomoji Kawai 1.
	23	Quantitative analysis of DNA by using AFM tip characterizer	AIST 1, SJTU 2, NTT-AT 3　Wang Chunmei 1 2, Itoh Hiroshi 1, Takano Akio 3, Takenaka Hisataka 3, Kurosawa Satoru 3, Hu Jun 2, Sun Jielin 2, Ichimura Shingo 1
	24	AFM and XPS evaluation of guanine thiol self-assembled monolayers	Graduate School of info. Sci. & Tech., Hokkaido Univ. 1, Nanotechnology Research Center, RIES, Hokkaido Univ. 2　○ Koichiro Ide 1, Hiroaki Azehara 2, Hiroshi Tokumoto 2
	25	Preparation of micropore-supported artificial membranes and apparent stiffness measurements	Nanotechnology Research Center, RIES, Hokkaido Univ. 1, Graduate School of Info. Sci. & Tech., Hokkaido Univ. 2　Hiroaki Azehara 1, Koichiro Ide 2, Hiroshi Tokumoto 1
	26	Analysis of Stress Relaxation Process of Living Cells Measured by AFM	Hokkaido Univ 1, Tohoku Univ2　*Takaharu Okajima 1, Masaru Tanaka 2, Shusaku Tsukiyama 1, Sadaaki Yamamoto 1, Masatsugu Shimomura 2, Hiroshi Tokumoto1