13 Science and Technology of Crystals
13.1 Bulk Crystal Growth
September 7
7a-ZA-　/ I
		Short Presentation (5min.) 11:05〜12:30 7a-ZA-1〜17　Poster Session 15:30〜17:30
	1	Control of metal ions doping on the automatic rapid growth of KDP crystals	ILE Osaka Univ.1, Kinki Univ.2　*H.Yanai1, K.Fuzioka1, N.Morio1, M.Yoshida2, M.Nakatsuka1
▲	2	Growth and laser-induced damage tolerance of CsB3O5 crystal	Graduate School of Engineering, Osaka University 1 ,Crystal Growth Centre, Anna University 2　Dodla Rajesh 1,2, Shimatani Hiroya 1, Yoshimura Masashi 1, Kitaoka Yasuo 1, Mori Yusuke 1, Sasaki Takatomo 1, R. Jayavel 2
	3	Growth of Nd:LaF3 Single Crystal using Czhocralski Method	IMRAM Tohoku Univ. 1, Tokuyama Corp. 2, ILE Osaka Univ. 3, School of Eng. Univ. Tokyo 4, Inst. Phys. ASCR 5　*Fukuda Kentaro 1,2, Ishizu Sumito 2, Yanagida Takayuki 1, Yoshikawa Akira 1, Cadatal Marilou 3, Sarukura Nobuhiko 3, Takahashi Hiroyuki 4, Suyama Toshihisa 2, Nikl Martin 5
▲	4	Luminescence properties of Ce3+-doped CaF2 single crystals grown by the micro-pulling-down method	IMRAM, Tohoku Univ. 1, Stella Chemifa Co. Ltd. 2, Institute of Physics, AS CR 3　*Kyoung Jin Kim 1, Kenji Aoki 2, Kei Kamada 1, Martin Nikl 3, Akira Yoshikawa 1
	5	Crystal growth of Yb doped YVO4 and YbVO4 by Edge-defined film-fed growth method	Oxide 1, GPI 2　*Matsukura Makoto 1, Klassen Annna 2, Nakamura Osamu 1, Miyamoto Akio 1, Furukawa Yasunori 1, Kochurikhin Vladimir 2
	6	Effects of Crystal Growth Direction on Ytterbium Gallium Garnet by Fz Technique	NIMS 1, ISSP Univ. Tokyo 2　Kimura Hideo 1, Tanahashi Rumi 1, Maiwa Koji 1, Sato J Taku 2
	7	Suppression of defect related luminescence in single garnet crystal crystals for scintillator application	Univ. Tokyo 1, IMRAM Tohoku Univ. 2, Inst. Physics AS CR 3　Ogino Hiraku 1, Yoshikawa Akira 2, Nikl Martin 3, Junichi Shimoyama 1, Kohji Kishio 1
	8	Preparation of GdAlO3-Al2O3 and REAlO3-MgAl2O4 eutectics by the floating zone method	Hokkaido Univ. 1　Mikio Higuchi 1, Yosuke Sasaki 1, Junichi Takahashi 1
	9	Study of the peritectic composition of KNbO3	IMR, Tohoku Univ. 1　*Nishiki Ayako 1, Simura Rayko 1, Huang Xinming 1, Uda Satoshi 1
	10	Influence of an electric field on congruent-melting composition of lithium niobate	IMR, Tohoku Univ. 1　Simura Rayko 1, Nakamura Kodai 1, Huang Xinming 1, Uda Satoshi 1
▲	11	Transmission electron microscopy at the interface wurtzite-GaN/beta-Ga2O3	NIMS 1, Koha Co., Ltd. 2　E.G. Víllora 1, K. Shimamura 1, T. Ujiie 2, K. Aoki 2, K. Kitamura 1
▲	12	Optical and electrical properties of Si-doped beta-Ga2O3 single crystals	NIMS 1, Koha Co., Ltd. 2　E.G. Víllora 1, K. Shimamura 1, T. Ujiie 2, K. Aoki 2, K. Kitamura 1
	13	LPE growth of AlN single crystals using cold-crucible under atmospheric nitrogen gas	Sumitomo Metal 1　*Tanaka Tsutomu 1, Yashiro Nobuyoshi 1, Kamei Kazuhito 1
	14	Effect of temperature gradient on the growth of homogeneous InGaSb crystals	Shizuoka Univ. 1, Shizuoka Inst,Sci & Tech. 2　Tanaka Tomonori 1, ChungHoa Chen 1, Hikida Takuya 1, Konno Akiko 1, Murakami Noriaki 1, Koyama Tadanobu 1, Momose Yoshimi 1, Ozawa Tetsuo 2, Okano Yasunori 1, ○ Hayakawa Yasuhiro 1
	15	Influence of seeding interface on dislocation behavior in CZ-Si crystal growth	Tohoku Univ. (IMR) 1, Shinshu Univ. (Edu) 2　*Taishi Toshinori 1, Koizumi Haruhiko 1, Ohno Yutaka 1, Yonenaga Ichiro 1, Hoshikawa Keigo 2
	16	Numerical analysis of influence of tilt in a unidirectional solidification process for multicrystalline silicon for photovoltaic	Kyushu University 1, RIAM, kyushu university 2　*Hiroaki Miyazawa 1, Lijun Liu 2, Koichi Kakimoto 2
	17	Numerical heat transfer of solvothermal autoclave for single crystal growth process	AIST 1, Fukuda Cry. Lab. 2, Tohoku Univ 3, Osaka Pref. Univ. 4　*Masuda Yoshio 1, Suzuki Akira 1, Mikawa Yutaka 2, Yokoyama Chiaki 3, Tsukada Takao 4
13.2 II-VI Crystals
September 5 9:00〜17:00
5a-E-　/ I
△	1	Molecular beam epitaxial growth of PbSnTe/CdTe heterostructures using a (001)-oriented GaAs substrate	Osaka Inst. of Tech., Nanomaterials Microdevices Res. Center　*Hotei Takanori 1, Itakura Tomoyuki 1, Koike Kazuto 1, Yano Mitsuaki 1
	2	Preparation and Characterization of In-doped CdTe Films by Electrodeposition	Chubu Univ. 1.　Wada Sinpei 1. Nishio Tomoari 1. Takahashi Makoto 1. Sato Shoji 1. Goto Hideo 1. Wakita Koichi 1.
	3	The surface morphology of CdTe grown on GaAs substrate by low pressure MOVPE	Chubu Univ. 1　*Uzura Shingo 1,Tahashi Masahiro 1,Goto Hideo 1,Ido Toshiyuki 1
	4	Surface treatment with hydrogen of ZnTe	Hokkaido Inst. of Tech　*Kyou Kei 1, Itinohe Ysihiro 1, Kanamori Masahiro 1, Imai Kazuaki 1, Sawada Takayuki 1, Suzuki Kazuhiko 1, Kimura Nobuyuki 1, Kimura Naohito 1
	5	HRXRD of ZnTe:O epitaxial layers grown on ZnTe substrates	Univ. of Yamanashi 1　*Yoichi Nabetani 1, Kazuaki Gemma 1, Tsutomu Muranaka 1, Takamasa Kato 1, and Takashi Matsumoto 1
		Break 10:15〜10:30
	6	Behavior of As in ZnSe single crystal	IMRAM, Tohoku Univ.1　*Wang Jifeng 1,Miyano taiki 1,Isshiki Minoru1
	7	Crystal growth and evaluation of V-doped ZnSe grown by MOVPE(II)	Chubu Univ.1　*Wu Zunyi 1,Tahashi Masahiro 1,Goto Hideo 1,Ido Toshiyuki 1
	8	Photoluminescence of MBE-ZnSeTe alloy II	Hokkaido Inst. of Tech.　*Kanamori Masahiro, Ichinohe Yoshihiro 1, Kyou Kei 1, Imai Kazuaki 1, Sawada Takayuki 1, Suzuki Kazuhiko 1, Kimura Nobuyuki 1, Kimura Naohito 1
	9	Excition-phonon interaction at Te isoelectronic centers in ZnSe	JSPS 1, RIES 2, JST CREST 3　Masafumi Jo 1,2, Yuujiro Hayashi 2, Hidekazu Kumano 2, Ikuo Suemune 2,3
	10	Photoluminescence of the ZnSe-ZnSe1-xTex	Hokkaido Inst. of Tech　1　Y. Ichinohe 1, G. Shigaura 1, M. Kanamori 1, K. Imai 1, T. Sawada 1, K. Suzuki 1, No . Kimura 1, Na. Kimura 1
	11	Self-organized multi quantum dots of CdSe/ZnSe grown on GaAs(100) substrate	Okayama Univ. of sciense 1, Miyazaki Univ. 2　*Ii Masakazu 1, Yoneta Minoru 1, Yoshino Kenji 2, Ohishi Masakazu 1, Saito Hiroshi 1
		Lunch 12:00〜13:00
5p-E-　/ I
	1	Emission characteristics of BeZnCdSe II-VI compound semiconductors on InP substrates	Sophia Univ. 1　*Tomoya Ebisawa 1,Ichirou Nomura 1,Masaki Kato 1,Soh Kuroiwa 1,Katsumi Kishino 1
	2	Design of BeZnSeTe green semiconductor laser diode structures on InP substrates	Sophia Univ,1　*Kato Masaki 1,Nomura Ichirou 1,Kuroiwa Soh 1,Ebisawa Tomoya 1,Kishino Katsumi 1
	3	Investigation of MgZnSeTe n-cladding layers for II-VI light emitting devices on InP substrates	Sophia Univ. 1　*Kuroiwa Soh 1, Nomura Ichirou 1 , Kato Masaki 1 , Ebisawa Tomoya 1, Kishino Katsumi 1 ,
	4	Development of ZnSSe PIN photodiode in blue-ultraviolet wavelength region	Faculty of Eng Tottori-Univ. 1　*Oshita Yuta 1,Miki Kouhei 1,Katada Daisuke 1,Abe Tomoki 1,Kasada Hirofumi 1,Ando Koshi 1
	5	Physical analysis of high concentration p-NiOx and optimization of manufacturing process	Univ. of Electro-Communications 1,Univ. of Electro-Communications 2,Univ. of Electro-Communications, 3,Univ. of Electro-Communications,4　*Mizuno Takumi 1,Ono Hiroshi 2,Uchida Kazuo 3,Nozaki Shinji 4
	6	Development of Multi-Scale Simulator for the Design of MgO Protecting Layer for Plasma Display Panel	Tohoku Univ. 1, Hiroshima Univ. 2, Tohoku Univ. 3　Kubo Momoji 1, Serizawa Kazumi 1, Kikuchi Hiromi 1, Sahnoun Riadh 1, Koyama Michihisa 1, Tsuboi Hideyuki 1, Hatakeyama Nozomu 1, Endou Akira 1, Takaba Hiromitsu 1, Del Carpio Carlos A. 1, Kajiyama Hiroshi 2, Shinoda Tsutae 2, Miyamoto Akira 3,1
	7	Fabrication　of MgxZn1-xO films depostitd by molecular precursor method.	Kogakuin Univ. 1, Kogakuin Univ. 2　Mashiyama Yoshihiro 1 ,Yoshioka Kaori 1, Kobayashi Toshiaki 1, Komiyama Shigetoshi 1, Adachi Shinnsuke 2, Satou mitufumi 2, Honnda Tooru 1.
△	8	Photoluminescence lifetime in Zn1-xCdxO alloy films on a-sapphire substrates.	Graduate School of Sci. and Tec., Shizuoka Univ. 1, Res. Inst. of Electronics, Shizuoka Univ. 2, NTT basic Res. Lab. 3　*Kenji Yamamoto 1,Toshiya Ohashi 2, Takehiko Tawara 3, Hideki Gotoh 3, Atsushi Nakamura 2, Jiro Temmyo 1,2
		Break 15:00〜15:15
	9	Fabrication and Electrical Properties of ZnO/ZnTe:O Hetero-junction	Yamanashi Univ.　*Kazuaki Gemma, Shogo Sasaki, Tatsumi Sakano, Yoichi Nabetani, Tsutomu Muranaka, Takamasa Kato, Takashi Matsumoto
	10	Growth of ZnO on a-plane sapphire by MBE using ozone as an oxygen source	Oubutsu Univ.　Junya Ohnishi 1, Miki Fujita 1, Atushi Kawaharazuka 2, Yoshiji Horikoshi 1
	11	ZnO film growth using DMZn by plasma assisted MOCVD method	Shizuoka Univ. 1, NIMS 2　*Nishimoto Kazuki 1, Hamao Taichi 1, Sumiya Masatomo 2, Fuke Shunro 1
△	12	ZnO-based films grown by side-flow RPE-MOCVD and nano-structure control	Res. Inst. Electronics Shizuoka Univ. 1　*Adachi Masahiko 1,Aoshima Tuyoshi 1,Hu Bo 1,Nakamura Atushi 1,Temmyo Jiro 1
▲	13	Controlling the shape of the tip of ZnO wires	ICORP,JST 1, NIMS 2　wang yuguang 1, Makoto Sakurai 2, Masakazu Aono 2
▲	14	Optical properties of bottlenecked ZnO nanorods	CIR in Tohoku Univ.1, IMR in Tohoku Univ.2, Depart. of applied physics in Tohoku Univ.3 　Sang Hyun Lee1, Takenari Goto1, Miyazaki hiroshi3, Meoung-Whan Cho 2, Takafumi Yao 1,2
▲	15	Computational study of electronic and electrical properties of nano-structural ZnO	Dept. Appl. Chem., Tohoku Univ.1 NICHe, Tohoku Univ.2　Zhigang Zhu1, Chutia Arunabhiram1, Riadh Sahnoun1, Michihisa Koyama1,Hideyuki Tsuboi1, Nozomu Hatakeyama1, Akira Endou1, Hiromitsu Takaba1, Momoji Kubo1, Carlos A. Del Carpio1, Akira Miyamoto1, 2
13.3 III-V Epitaxial Growth
September 6 13:00〜17:45
6p-E-　/ I
	1	Near-field Imaging Spectroscopy of an InAs wetting layer in InAs/InP Quantum dots	Keio Univ. 1, NIMS 2, Fujitsu Lab. 3　*Kubota Ryosuke 1, Nakashima Koji 1, Mizuno Dai 1, Saiki Toshiharu 1, Sakuma Yoshiki 2, Usuki Tatsuya3
△	2	In-situ RHEED chevron structure analysis of self-assemble InAs/GaAs quantum dot growth and In diffusion effect	Kobe Univ. 1　*Kudo Takuya 1, Inoue Tomoya 1, Kita Takashi 1, Wada Osamu 1
	3	Three-dimensional structure of InAs quantum dot observed by electron tomography	Kobe Univ. 1, Hitachi High-Technologies 2　*Inoue Tomoya 1, Kita Takashi 1, Wada Osamu 1, Konno Mitsuru 2, Yaguchi Toshie 2, Kamino Takeo 2
△	4	Effects of AlAs Coating for InAs Quantum Dots V	N.I.T.　*Yokota Hiroshi 1, Okamoto Hiroshi 1, Iizuka Kanji 1
	5	Luminescence properties of high-density InAs quantum dots on GaSb/GaAs	Univ. of Electro-Communications 1　*Takashima Rihito 1, Yamaguchi Koichi 1
	6	Photoluminescence polarization characteristics of self-assembled InGaAs/GaAs quantum dots by droplet epitaxy	Kobe Univ. 1　*Inui Akitoshi 1, Kido Satoshi 1, Kojima Osamu 1, Kita Takashi 1, Wada Osamu 1
	7	MOVPE Growth of InAsSb Quantum Dots on Vicinal InP Substrates for DFB-Laser Applications	Fujitsu 1, QD Laser 2, RCAST, CINQIE Univ. of Tokyo 3　*Kawaguchi Kenichi 1, Matsuda Manabu 1, Ekawa Mitsuru 1, Uetake Ayahito 1, Kuwatsuka Haruhiko 1, Yamamoto Tsuyoshi 1, Sugawara Mitsuru 1,2, Arakawa Yasuhiko 3
▲	8	Long wavelength emission from InAs/GaAs quantum dots	ATR　Shanmugam Saravanan 1, Takahisa Harayama 1
	9	Multilayer 1.4um InAs quantum dots with thin spacer layer using GaNAs strain compensation layer	Tokyo Inst. of Tech. 1　Suzuki Ryoichiro 1,Miyamoto Tomoyuki 1,Koyama Fumio 1
	10	Closely stacking growth of InAs and GaSb quantum dots on self-formed GaAs nanoholes	Univ.of Electro comm. 1　Murawaki Fumitoshi 1,Tsukiji Mobukazu 1,Yamaguchi Koichi 1
		Break 15:30〜15:45
	11	Self-formation control of low-density InAs quantum-dots by intermittent supply method (2)	The Univ of electro-communication　Patchakapat Ponlachet 1,Yamaguchi Kouichi 2
	12	Photoluminescence emission from the stacked InAs SC-QDs using the templates formed by the NJP method	AIST 1, NEC Corp. 2, Univ. of Tsukuba 3, NIMS 4　*Shunsuke Ohkouchi 1,2, Yoshimasa Sugimoto 3,4, Nobuhiko Ozaki 3, Hiroshi Ishikawa 1, Kiyoshi Asakawa 3
△	13	Attempt of positional control ofInAs Quantum Dot on GaAs substrate by electron beam irradiation	N.I.T.　*Tsunashima Keiichi 1, Yokota Hiroshi 1, Iizuka Kanji 1, Okamoto Hiroshi 1
	14	Double-capped InAs QDs on InP (1 0 0) substrate by Selective MOVPE Growth using GaAs buffer layer	Sophia Univ. 1　*Saito Yasuhito 1, Okawa Tatsuya 1, Akaishi Masataka 1, Shimomura Kazuhiko 1
	15	Flatness of InAs QDs structure using GaInAs cap layer by MOVPE selective growth	Sophia Univ.1　Akaishi Masataka, Okawa Tatsuya, Saito Yasuhito, Shimomura Kazuhiko
	16	Selective area growth of InAs QDs by metal-mask method (III) -QD ensemble with a different absorption wavelength in a different area-	U. Tsukuba 1, NEC 2, AIST 3, NIMS 4　*Y. Takata 1, N. Ozaki 1, S. Ohkouchi 1,2,3, Y. Sugimoto 1,4, N. Ikeda 4, Y. Kitagawa 1, Y. Watanabe 1, A. Mizutani 1, and K. Asakawa 1
	17	Growth of III-V compound semiconductor nanowire on Si(111) substrate by selective-area MOVPE	G.S.I.S.T, and RCIQE, Hokkaido Univ. 1　*Tomioka Katsuhiro 1,Motohisa Junichi 1,Hara Shinjiroh 1,Fukui Takashi 1
	18	Growth and characterization of InGaAs nanowires on InP(111)B substrates by selective-area MOVPE	Grad. Sch. of IST and RCIQE, Hokkaido Univ. 1　*Sato Takuya 1, Motohisa Junichi 1, Hara Shinjiro 1, Fukui Takashi 1
13.3 III-V Epitaxial Growth
September 7 9:00〜18:00
7a-E-　/ I
	1	Band offsets at GaP/Si heterojunctions	AIST　Isao Sakata,Hitoshi Kawanami
	2	N Content and The Growth Temperature of The MBE Grown GaPN Layers	Res.Center for Photovoltaics, AIST 1 　*Kawanami Hitoshi 1, Sakata Isao 1
△	3	Electrical properties of S doped n-GaPN layer grown by organometallic vapor phase epitaxy	Toyohashi Univ. of Technology 1　*Hatakenaka Susumu 1,Nakanishi Yoshiyuki 1,Wakahara Akihiro 1,Furukawa yuzo 1, Okada Hiroshi 1, Yonezu Hiroo 1
	4	Luminescence properties of GaPN layers grown by migration-enhanced epitaxy	Toyohashi Univ. Tech.　Umeno Kazuyuki 1, Furukawa Yuzo 1, Noma Ryosuke 1, Wakahara Akihiro 1, Yonezu Hiroo 1
	5	Nitrogen δ-Doping in GaP(001) by MOCVD and Single-Photon Emission from an Isolated NN Pair	NIMS 1, Univ. of Tsukuba 2　*Sakuma Yoshiki 1, Ikezawa Michio 2, Masumoto Yasuaki 2
		Break 10:15〜10:30
	6	Polarization Properties of Twin Photoluminescence Peaks from Single Isoelectronic Traps in Nitrogen Delta-doped GaAs	Saitama Univ. 1,ISSP 2,The Univ. of Tokyo 3　*Endo Yuta 1,Ito Masatoshi 1,Hijikata Yasuto 1,Yaguchi Hiroyuki 1,Yoshida Sadahumi 1,Yoshita Masahiro 2,Akiyama Hidehumi 2,Nakajima Fumihiro 3,Katayama Ryuji 3,Onabe Kentaro 3
	7	Photoliminescence from Isoelectronic Traps in Nitrogen Delta Doped GaP	Saitama Univ. 1,ISSP 2,The Univ. of Tokyo 3　*Masatoshi Ito 1,Yuta Endo 1,Yasuto Hijikata 1,Hiroyuki Yaguchi 1,Sadafumi Yosida 1,Masahiro Yoshita 2,Hidefumi Akiyama 2, Fumihiro Nakajima 3,Ryuji Katayama 3,Kentaro Onabe 3
	8	Growth of GaNAs films with As2 source in atomic hydrogen-assisted molecular beam epitaxy	Univ. of Tsukuba 1　Takata Ayami 1, Oshima Ryuji 1, Okada Yoshitaka 1
	9	GaAsN thin films grown by flow rate modulated chemical beam epitaxy	Toyota Tech. Inst.　*Kenji Saito 1, Kenichi Nishimura 1, Hidetoshi Suzuki 1,Nobuaki Kojima 1,Yoshio Ohshita 1,Masafumi Yamaguchi 1
	10	Local vabrational modes relating to N in GaAsN films grown by CBE	Toyota Tech. Inst. 1　*Suzuki Hidetoshi 1, Nishimura Kenichi 1, Takahiro Imai 1, Nobuaki Kojima 1, Ohshita Yoshio 1, Yamaguchi Masafumi 1
▲	11	Nitrogen induced changes in the optical properties of GaAsN thin films grown by CBE	Toyota Technological Institute 1　*Balasubramanian Balamurugan 1,Kenichi Nishimura 1, Hidetoshi Suzuki 1, Ohshita Yoshio 1, Yamaguchi Masafumi 1
		Lunch 12:00〜13:00
7p-E-　/ I
	1	Aluminum passivation in arsenic atmosphere of epitaxial growth of GaInNAs by molecular beam epitaxy	Osaka Univ.　Kato Masakazu 1, Uchiyama Masayuki 1, Higashi Kotaro 1, Wu ShuDong 1, Kondow Masahiko 1
	2	Sutudy on the improvement of luminescence efficiency of GaInAsN alloys by photoirradiation	Saitama Univ. 1,The Univ. of Tokyo 2,ISSP 3　(M)Tanioka Kentaro 1,Endo Yuta 1,Ito Masatoshi 1,Hijikata Yasuto 1,Yaguchi Hiroyuki 1,Yoshida Sadafumi 1,Katayama Ryuji 2,Onabe Kentaro 2,Yoshita Masahiro 3,Akiyama Hidefumi 3
▲	3	In situ annealing effect on TlGaInNAs/GaAs quantum well structures	ISIR Osaka Univ.　Daivasigamani Krishnamurthy 1, Ozasa Motoki 1, Tanaka Yusuke 1, Hasegawa Shigehiko 1, Asahi Hajime 1
	4	Growth of TlInGaNAs/TlInP on InP substrate (2)	Osaka Univ. ISIR 1　Ozasa Motoki 1, Tanaka Yusuke 1, Daivasigamani Krishnamurthy 1, Hasegawa Shigehiko 1, *Asahi Hajime 1
	5	MOMBE growth of InGaAsN layers on InP substrates using low RF-power nitrogen plasma	NTT Photonics Labs.　*Mitsuhara Manabu 1, Sato Tomonari 1, Kakitsuka Takaaki 1, Fukano Hideki 1, Kondo Yasuhiro 1
	6	Emission properties of InGaAsN/GaAsSb quantum well diodes grown on InP substrates	Osaka Prefecture Univ. 1, CREST-JST 2　*Kawamura Yuichi 1,2, Inoue Naohisa 1
	7	Fabrication of GaAsBi/GaAs Multi-Quantum Well structures (II)	Kyoto Inst. of Technology　*Tominaga Yoriko 1,Kinoshita Yusuke 1,Feng Gan 1,Oe Kunishige 1,Yoshimoto Masahiro 1
	8	Observation of InGaP (001)surface structure under hydrogen atmosphere	Univ. of Hyogo 1, NTT Basic Research Laboratories 2　*Seiji Fujikawa 1, Tomoaki Kawamura 2, Yoshio Watanabe 2, Satyban Bhunia 2, Yoshiyuki Tsusaka 1, Yasushi Kagoshima 1, Junji Matsui 1
	9	Effect of arsenic species to area selective epitaxy of GaAs by MEE	Waseda Univ.　*Kawaharazuka Atsushi, Yoshiba Ippei, Horikoshi Yoshiji
	10	A Study of in situ structural characterization of GaAs surface oxide by Ga pulse-beam irradiation in MBE environment	Kwansei Gakuin Univ. 1　Ushio Shoji 1, Mastuda Kazuhiro 1, Fukuhara Moriyasu 1, Kaneko Tadaaki 1
		Break 15:30〜15:45
	11	Young Scientist Award for the Presentation of an Excellent Paper Growth of antimonide compound semiconductor on Si(001) substrate and its application for photonic devices	National Institute of Information and Communications Technology　*Akahane Kouichi 1,Yamamoto Naokatsu 1, Tsuchiya Masahiro 1
	12	Self-annihilation process of anti-phase domains in GaP layers on Si substrates	Toyohashi Univ. Tech. 1　Yamane Keisuke 1, Kobayashi Tomohito 1, Iwahashi Satoshi 1, *Furukawa Yuzo 1, Wakahara Akihiro 1, Yonezu, Hiroo 1
△	13	Morphology Improvement of InGaAs on Si with Micro-Dot Seed Region	The Univ. of Tokyo 1, Tokyo Inst. of Technology 2　*Takuya Hoshii 1, Momoko Deura 1, Ryosho Nakane 1, Masakazu Sugiyama 1, Satoshi Sugahara 2, Mitsuru Takenaka 1, Yoshiaki Nakano 1, Shin-ichi Takagi 1
	14	Monitoring and control of the initial nucleation in selective area MOVPE of III/V compound semiconductor layers on Si	Univ. of Tokyo 1, Tokyo Inst. Tech. 2　*Deura Momoko 1, Sugiyama Masakazu 1, Hoshii Takuya 1, Nakane Ryosho 1, Takenaka Mitsuru 1, Sugahara Satoshi 2, Takagi Shinichi 1, Nakano Yoshiaki 1
	15	Selective growth of InP on silicon(100) substrate by molecular beam epitaxy.	Osaka Univ. ISIR 1　Araki Keisuke 1, *Hasegawa Shigehiko 1, Asahi Hajime 1
	16	Growth of InAs on GaAs(111)A by MBE and their electric properties	Waseda Univ.　Harada Ryohei 1, Nishinaga Jiro 1, Takada Tomonori 1, Kawaharazuka Atsushi 2, Horikoshi Yoshiji 1,
	17	Epitaxial lift-off of InAs thin films obtained by lattice-mismatched growth on GaAs substrates	JAIST 1　Jun-ya Arita 1, Hayato Takita 1, Yonkil Jeong 1, Toshi-kazu Suzuki 1
△	18	Characterization of MOVPE-grown Si-doped InSb thin films on sapphire substrate	Kanagawa Univ. 1, HRC, Kanagawa Univ. 2, JAC 3　*Matsumoto Masashi 1, Yamaguchi Shigeo 1,2, Yasuhara Shigeo 3, and Shimoyama Norio 3
	19	Heteroepitaxial growth of InSb films via Si(111)- √7×√3-In surface reconstruction	Toyama Univ.1　*Kyohei Nagashima 1,Mitsufumi Saito 1,Masayuki Mori 1,Toyokazu Tambo 1,Koichi Maezawa 1
13.3 III-V Epitaxial Growth
September 8 9:00〜12:15
8a-H-　/ I
	1	TEM-observation and growth-mode of In0.65Ga0.35As QWRs grown on (775)B InP substrates.	Graduate School of Science and Engineering, Ehime University 1,Graduate School of Engineering Science, Osaka University 2　*Mouri Naoyoshi 1,
	2	Isotropic interface roughness of pseudomrophic (411)A InGaAs/InAlAs modulation-doped quantum wells grown by MBE	Univ. of Tokushima 1, Osaka Univ. 2, Ehime Univ. 3　*Kitada Takahiro 1, Kusunoki Shinichiro 2, Kinouchi Masato 1, Morita Ken 1, Shimomura Satoshi 3, Isu Toshiro 1
	3	Mechanism of As distribution in InP on GaInAs layer grown by OMVPE	Graduate School of Engineering 1, Venture Business Laboratory 2, Nagoya Univ.　*Mori Akiko 1, Ohtake Yusuke 1, Tabuchi Masao 2, Takeda Yoshikazu 1
△	4	Analyses on surface reactions for GaAs and InP based on the surface adsorption layer model of MOVPE	Univ. of Tokyo 1, RCAST 2　*Deura Momoko 1,2, Sugiyama Masakazu 1, Shimogaki Yukihiro 1, Nakano Yoshiaki 2
△	5	Alloy composition dependence of the mask effect in selective-area MOVPE of InGaAsP	The Univ. of Tokyo 1, RCAST Univ. of Tokyo 2　*Ryusuke Onitsuka 1, Tomonari Shioda 1, Masakazu Sugiyama 1, Yukihiro Shimogaki 1, Yoshiaki Nakano 1,2
	6	Promotion effect of V group hydrides decomposition by triethyl-X (X=P, As, etc.) on epitaxial growth by MOCVD.	NTT Advanced Technology Corp. 　*Uchida Masahiro 1, Araki Gako 1, Yokohama Hideo 1, Hodohara Tatsuya 1
		Break 10:30〜10:45
	7	Epitaxial growth method of InP-HBT structure with carbon doped base layer by tri-ethyle organic metal groups	NTT Advanced Technology Corp.　Araki Gako 1, Yokohama Hideo 2
	8	High electron mobility InGaAs chanel HEMT grown with TEI by MOCVD.	NTT Advanced Technology Corp. 1　*Hideo Yokohama 1,Ryuta Sakai 1,Gako Araki 1
	9	Investigation of crystalline quality for C-doped InGaAlAs alloy materials by MOVPE	Hitachi CRL　*Tsuchiya Tomonobu 1,Shiota Takashi 1,Kitatani Takeshi 1
	10	n-type doping in AlGaAsSb lattice matched to InP	Osaka Electro-Communication Univ. 1, AIST 2　*Yoshimi Akio 1, Tanaka Masashi 1, Inada Takeshi 1, Susaki Wataru 1, Mozume Teruo 2
	11	Indices of refraction of AlAsSb and AlGaAsSb	AIST 1, Osaka Electro Commun. Univ. 2　*Mozume Teruo 1, Gozu Shin-ichirou 1, Simoyama Takasshi 1, Ishikawa HIroshi 1, Tanaka Masashi 2, Yoshimi Akio 2, and Susaki Wataru 2
	12	Refractive index for InGaAs depending on the n-type carrier density	AIST　S. Gozu 1, T. Mozume 1, H. Ishikawa 1
13.4 III-V Nitride Epitaxial Growth
September 4 12:45〜16:15
4p-S-　/ I
	1	GaN/AlGaN nanocolumn ultraviolet light emitting diodes on n-(111) Si substrates grown by rf-plasma assisted molecular beam epitaxy	Sophia Univ. 1, CREST JST 2　*Hiroto Sekiguchi 1 2, Shunsuke Ishizawa 1 2, Kouki Sakamoto 1, Goh Kobayashi 1, Kei Kato 1, Jo Tanaka 1, Akihiko Kikuchi 1 2 and Katsumi Kishino 1 2
	2	Bellium doping effects on InGaN/GaN nanocolumn LEDs on n-(111)Si substrates by rf-plasma assisted molecular beam epitaxy	Sophia Univ. 1,CREST 2　*Kei Kato 1,Hiroto Sekiguchi 1,2,Koki Sakamoto 1,Jo Tanaka 1,Akihiko Kikuchi 1,2,Katsumi Kishino1,2
	3	Selective Growth of GaN Nanocolumns by Ti Thin Layer on Substrate	Sophia Univ. 1,CREST 2　*Hoshino Takayuki 1,Ishizawa Syunsuke 1,2,Sekiguchi Hiroto 1,2,Kikuchi Akihiko 1,2,Kishino Katsumi 1,2
	4	Residual of hydrogen atoms in GaN layers grown by CS-MBE with ammonia flow at low temperature	Kogakuin Univ　*Sawadaishi Masashi, Sawada Masaru, Arai Masatoshi, Okuhata Takashi and Honda Tohru
	5	Growth and characterization of GaN nanorods on n-Si(001) substrates by MBE	Osaka Univ. ISIR 1　J.U.Seo 1, S.Hasegawa 1, H.Asahi 1
	6	RF-MBE growth of p-type GaN by Be,Mg specially doping	Waseda Univ. 　*Nagai Kenichiro 1, Kawaharazuka Atsushi 2, Horikoshi Yoshiji 1
		Break 15:30〜15:45
	7	Optical emission properties of In-rich InAlN nanocolumns by RF-MBE	Sophia Univ. 1,CREST 2　*Kamimura Jumpei 1,Ishizawa Shunsuke 1,2,Kikuchi Akihiko 1,2,Kishino Katsumi 1,2
	8	The growth of InGaN/GaN multi quantum well on GaN templates by rf-assisted molecular beam epitaxy	Sophia Univ. 1, CREST JST 2　Akutsu Masanori 1, Vadivelu Ramesh 1, Sekiguchi Hiroto 1,2, Ishizawa Shunsuke 1,2, Kikuchi Akihiko 1,2, Kishino Katsumi 1,2
	9	Selective growth of GaN nanocolumns with pre-deposited Al patterns by RF-MBE: Dependence on pattern figuration	Sophia Univ. 1, CREST, JST 2　*Ishizawa Shunsuke 1,2,Hoshino Takayuki 1,Sugimoto Shuichi 1,Sekiguchi Hiroto 1,2,Kikuchi Akihiko 1,2, Kishino Katsumi 1,2
△	10	Realization of two-dimentional growth of non-polar 4H-AlN on 4H-SiC (1\=100) substrates	Kyoto Univ. 1　*Masahiro Horita 1, Jun Suda 1, Tsunenobu Kimoto 1
	11	MBE growth of GaN using an ammonia cluster ion beam as a nitrogen source	Okayama Univ. of Science 1,Hokkaido Inst. of Technology 2　*Saito Hiroshi 1,Ohishi Masakazu 1,Imai Kazuaki 2,Okuda Shinnya 1,Morimoto Yusuke 1
	12	Phase Separation of InAlN Thin Films Grown on Si Substrate by Ammonia MBE	Nippon Inst. of Technol. 1,Epitec, Inc. 2　*Oishi Shota 1,Ito Akira 1,Kim Seong-Woo 1,Suzuki Toshimasa 1,2
△	13	Dependence of deep level concentration on the V/III ratio in GaN grown by RF-MBE	Dept. of Quantum Eng., Nagoya Univ. 1, VBL, Nagoya Univ. 2　*Mitsunaga Tomoaki 1, Ygishita Youhei 1, Kurouchi Msahito 2, Kishimoto Shigeru 1,2, Osaka Jiro 1, Mizutani Takashi 1
		Break 16:15〜16:30
	14〜19　16:30〜18:00（Joint Session E: Spintoronics）
13.4 III-V Nitride Epitaxial Growth
September 4 10:30〜18:00
4a-ZR-　/ I
	1	HVPE growth of a (11-22)GaN on a patterned (311)Si substrate	Nagoya Univ.1　*Suzuki Noriyuki 1,Utida Tomoyuki 1,Tanikawa Tomoyuki 1,Honda Yoshio 1,Yamaguchi Masahito 1,Sawaki Nobuhiko 1
	2	Twisted-domain mixture in semipolar GaN surface	Tokyo Univ. Science 1, JST ERATO 2　*Kusakabe Kazuhide 1, Yamazaki Takashi 1, Hashimoto Iwao 1, Ohkawa Kazuhiro 1,2
	3	Growth of GaN nanocrystals on β-Ga2O3 substrate	Shizuoka Univ. 1,Shizuoka Univ. RIE 2,Nippon Light Metal Co. Ltd 3　*Takeda Satoshi 1,Inoue Yoku 1,Ishida Akihiro 1,Mimura Hidenori 2,Ohira Shigeo 3
	4	Low Temperature MOVPE growth of n-type GaN by pulse injection method	School of Engineering, The University of Tokyo 1, School of Engineering, The Universutt of Tokyo 2, SORST　*Jung-Seung Yang 1,3, Hassanet Sodabanulu 2,3, Sugiyama Masakazu 2,3, Nakano Yoshiaki 2,3, Shimogaki Yukihiro
		Break 11:30〜11:45
	5	Production of InGaN　powder using sol-gel method	Shizuoka Univ.1,NIMS.2　*Hamada Masateru 1,Nakamachi Taichi 1,Sumiya Masatomo 2,Fuke Shunro 1
	6	Epitaxial GaN films grown on Ni substrates with HfN buffer layers	The Univ. of Tokyo 1,2,KAST 3,JST-CREST 4　*Wada Yasumasa 1,Nakano Takayuki 3,Inoue Shigeru 2,Okamoto Koichiro 2,Fujioka Hiroshi 2,3,Oshima Masaharu 1,4
	7	Epitaxial growth of GaN films on Fe substrates using HfN as buffer layers	Univ. of Tokyo 1, KAST 2　Aoyama Akira 1, Goto Yasuhiro 1, Okamoto Kouichiro 1, Inoue Shigeru 1, Nakano Takayuki 2, Fujioka Hiroshi 1,2
△	8	Room temperature epitaxial growth of the group-III nitride films on ZnO substrates by pulsed sputtering deposition	KAST 1, The Univ. of Tokyo 2,　*Nakano Takayuki 1, Kobayashi Atsushi 2, Aoyama Akira 2, Goto Yasuhiro 2, Okamoto Kouichirou 2, Inoue Shigeru 2, Fujioka Hiroshi 1,2,
△	9	Characteristics of nonpolar and semipolar GaN grown on nearly lattice-matched ZnO	IIS, The Univ. of Tokyo 1, KAST 2, Mitsubishi Chemical Group Science and Technology Research Center 3　Atsushi Kobayashi 1, Kohei Ueno 1, Jitsuo Ohta 2,3, Hiroshi Fujioka 2,3, Hidetaka Amanai 3, Satoru Nagao 3, Hideyoshi Horie 3
		Lunch 13:00〜14:00
4p-ZR-　/ I
	1	Characterization of GaN crystals grown by carbothermal reduction and nitridation of continuously-supplied Ga2O3	Hokkaido Univ. 1, NIMS 2, Horiba, Ltd. 3, Sumitomo Seika Co. 4, AIST 5　A. Miura 1, S. Shimada 1, T. Sekiguchi 2, M. Yokoyama 3, B. Mizobuchi 4, T. Kitamura 5, S. Nakashima 5
	2	CAICISS study of GaN(0001) surface grown by liquid phase epitaxy method	Grad. Sch. Eng., Osaka Univ. 1, Frontier Research Center, Osaka Univ. 2　Suto Hirofumi 1, Fujii Shunjiro 1, Kawamura Fumio 1, Mori Yusuke 1, Kitaoka Yasuo 2, Honda Shin-ichi 1, Katayama Mitsuhiro 1
	3	Phase stability of GaN crystals grown by the ammonothermal method using acidic mineralizers	IMRAM Tohoku Univ. 1, Graduate school of Science, Tohoku Univ. 2, Mitsubishi Chemical 3　*Hoshino Naruhiro 1,2,Kagamitani Yuji 1, Dirk Ehrentraut 1, Kawabata Shinichiro 3, Itoh Hirohisa 3, Fukumura Hiroshi 2, Fukuda Tsuguo 1
	4	High quality GaN growth by the ammonothermal method	IMRAM Tohoku Univ. 1, Mitsubishi Chemical 2, Fukuda Crystal lab. 3　*Kagamitani Yuji 1, Hoshino Naruhiro 1, Ito Hirohisa 2, Ehrentraut Dirk 1, Kawabata Shinichiro 2, Mikawa Yutaka 3, Fukuda Tsuguo 1
	5	Photoluminescence of GaN grown by ammonothermal method (2)	CIR, Tohoku Univ.1, IMRAM, Tohoku Univ.2, IMR, Tohoku Univ.3　Katsushi Fujii1, Takenari Goto1, Naruhiro Hoshino2, Yuji Kagamitani2, Dirk Ehrentraut2, Takafumi Yao1,3, Tuguo Fukuda2
	6	LPE Growth of GaN Single Crystals using Na flux Method in High-Purity Environment	Osaka Univ. 1　*Kitano Yoshihiro 1, Katsuike Satoshi 1, Tanpo Masaki 1, Imade Mamoru 1, Miyoshi Naoya 1, Kawamura Fumio 1, Yoshimura Masashi 1, Kitaoka Yasuo 1, Mori Yusuke 1, Sasaki Takatomo 1
	7	Growth of Bulk GaN Single Crystals using Carbon Added Na Flux.	Osaka Univ.　*Tanpo Masaki 1, Katsuike Satoshi 1, Kitano Yoshihiro 1, Imade Mamoru 1, Miyoshi Naoya 1, Kawamura Fumio 1, Yoshimura Masashi 1, Kitaoka Yasuo 1, Mori Yusuke 1, Sasaki Takatomo 1
		Break 15:45〜16:00
	8	Growth and characterization of GaN crystals grown by Na-flux method	NGK Insulators,LTD. 1, Toyoda Gosei,co.,ltd. 2, Graduate school of Eng., Osaka Univ. 3　Iwai Makoto 1, Higashihara Shuhei 1, Imai Katsuhiro 1, Yamasaki Shirou 2, Sato Takayuki 2, Nagai Seiji 2, Kawamura Fumio 3, Kitaoka Yasuo 3, Mori Yusuke 3, Sasaki Takatomo 3
	9	Suppression of surface reaction in HVPE of GaN on 6H-SiC substrates	CIR, Tohoku Univ. 1, IMR, Tohoku Univ. 2　Jun-Seok Ha1, Hyo-Jong Lee1, S. Nagata2, S.W.Lee1, H.J.Lee1, H. Goto1, S.H.Lee1, M.W. Cho1,2, and T. Yao1,2
	10	Growth of a thick GaN crystal on a (111)Si substrate by selective HVPE (II)	Nagoya Univ. 1　*Uchida Tomoyuki 1,Honda Yoshio 1,Yamaguchi Masahito 1,Sawaki Nobuhiko 1
	11	Effect of carbide buffer layer for GaN growth on sapphire substrate by HVPE method	Furukawa Co.,Ltd.　*Kazutomi Yamamoto 1,Haruo Sunakawa 1,Yujiro Ishihara 1,Norihiko Sumi 1,Akira Usui 1
	12	Formation of Voids in GaN Grown on r(1\overline{1}02) sapphire substrate by MOVPE	Kyushu Univ 1, Kyushu Univ ASTEC 2, Yamaguchi Univ 3　Fukushima Akihito 1, Kugiyama Yuta 1, *Kuwano Noriyuki 1 2, Minami Masahiro 3, Araki Masahiro 3, Hoshino Katsuyuki 3, Tadatomo Kazuyuki 3
	13	Analysis of residual thermal stresses in GaN/sapphire heterostructures	CIR Tohoku Univ. 1, Furukawa Co. Ltd. 2, IMR Tohoku Univ. 3　*Hiroki Goto 1,2, Seogwoo Lee 1, Hyunjae Lee 1, Hyo-Jong Lee 1, Junseok Ha 1, Takenari Goto 1, Meoungwhan Cho 3, Takafumi Yao 1,3
	14	Machining of GaN by Plasma CVM(Chemical Vaporization Machining)(II)	SHARP Corp. 1,Osaka Univ. 2　*Nakahama Yasuji 1,Funaki Takeshi 1,Kanetsuki Norio 1,Kadono Masaru 1,Sano Yasuhisa 2,Yamamura Kazuya 2,Endo Katsuyoshi 2,Mori Yuzo 2
	15	Machining of AlN by Plasma CVM(Chemical Vaporization Machining)	SHARP Corp. 1,Osaka Univ. 2　*Funaki Takeshi 1,Nakahama Yasuji 1,Kanetsuki Norio 1,Kadono Masaru 1,Sano Yasuhisa 2,Yamamura Kazuya 2,Endo Katsuyoshi 2,Mori Yuzo 2
13.4 III-V Nitride Epitaxial Growth
September 5 9:45〜12:00
5a-ZR-　/ I
△	1	Energy relaxation of hot carriers photo-excited in InGaN	Waseda Univ. 1　*Ushiyama Takafumi 1, Saeki Yu 1, Toizumi Tomokatsu 1, Nakazato Yoshiaki 1, Fujita Taisuke 1, Lu Shulong 1, Tackeuchi Atsushi 1
	2	Spin precession under magnetic fields and photo-induced Faraday rotation in InGaN – g-factor and initial relaxation processes	Dept. Integration Science, Chiba Univ. 1, Dept. Science, Chiba Univ. 2, Inst. Industrial Sci. Univ. Tokyo 3,Inst. Advanced Sci. Tech. 4　Matsusue Toshio 1,Bando Hiroyuki 1,Mino Hirofumi 2,Arita Munetaka 3,Arakawa Yasuhiko 3 4
	3	Characterization of InGaN alloys by spectroscopic ellipsometry	Saitama Univ. 1, Chiba Univ. Graduate School of Electrical and Electronics Engineering 2, VBL 3, InN-Project as CREST-program of JST 4　Yusuke Tsukagoshi 1, Misao Orihara 1,4, Yasuto Hijikata 1, Hiroyuki Yaguchi 1,4, Sadahumi Yoshida 1,4, Song-Bek Che 2,3,4, Yoshihiro Ishitani 2,3,4, Akihiko Yoshikawa 2,3,4
	4	Scanning near-field optical microscopy of InxGa1-xN epitaxial layers (1)	Yamaguchi Univ. 1, Mitsubishi Cable Ind. 2　*Kato Nobuo 1, Kobayasi Eiji 1, Saito Takuya 1, Murotani Hideaki 1, Yamada Yoichi 1, Taguchi Tsunemasa 1, Kudo Hiromitsu 2, Okagawa Hiroaki 2
		Break 10:45〜11:00
	5	Scanning near-field optical microscopy of InxGa1-xN epitaxial layers (2)	Yamaguchi Univ. 1, Mitsubishi Cable Ind. 2　*Saito Takuya 1, Kobayashi Eiji 1, Kato Nobuo 1, Murotani Hideaki 1, Yamada Yoichi 1, Taguchi Tsunemasa 1, Kudo Hiromitsu 2, Okagawa Hiroaki 2
	6	Theoretical investigation on anisotropic optical properties in semipolar and nonpolar InGaN quantum wells	Kyoto Univ. 1　*Kazunobu Kojima 1, Hiroaki Kamon 1, Mitsuru Funato 1, Yoichi Kawakami 1
△	7	Correlation between optical gain and internal field in InGaN quantum well lasers	Kyoto Univ. 1, Regensburg Univ. 2, Nichia Corp. 3　*Kazunobu Kojima 1, Mitsuru Funato 1, Yoichi Kawakami 1, Ulrich T. Schwarz 1,2, Shinichi Nagahama 3, Takashi Mukai 3
	8	Optical characteristic of InGaN/GaN quantum disk nanocolumns by KOH process	Sophia Univ. 1,CREST 2　*Tanaka Jo 1,Sekiguchi Hiroto 1,2,Petter Holmstrom 1,Kikuchi Akihiko 1,2,Kishino Katsumi 1,2
13.4 III-V Nitride Epitaxial Growth
September 6 9:00〜11:30
6a-ZR-　/ I
	1	JJAP Award Lecture >Room-Temperature Stimulated Emission from AIN at 214 nm	University of South Carolina　Vinod Adivarahan and Asif Khan
	2	Raman study of activation process in p-type AlGaN	Kyoto Inst. Tech. 1, Wakayama Univ. 2, Sharp Co. 3　*Yamamoto Hiroaki 1, Matsuoka Daisuke 1, Hasuike Noriyuki 1, Kisoda Kenji 2, Ishida Masaya 3, Furukawa Katsuki 3, Taneya Mototaka 3, Harima Hiroshi 1
	3	Substrate Orientation Dependence of Polarization Properties in Strained AlGaN Quantum Wells	Kanazawa Inst. of Technology 1　*A. Atsushi Yamaguchi 1
△	4	Spectroscopic studies of AlGaN/GaN multiple quantum well	Waseda Univ 1,Stanley Electric Co. Ltd. 2　*Nakazato Yoshiaki 1,Fujita Taisuke 1,Toizumi Tomokatu 1,Tackeuchi Atsushi 1,Chinone Takako 2,Liang Ji-Hao 2,Kajikawa Masataka 2
		Break 10:15〜10:30
	5	Temperature dependence of near-field photoluminescence distribution in AlGaN-based quantum wells	Yamaguchi Univ. 1　*Murotani Hideaki 1, Saito Takuya 1, Kato Nobuo 1, Kobayashi Eiji 1, Yamada Yoichi 1, Taguchi Tsunemasa 1
	6	Formation azimuth of dipole moment about UV and Deep-UV luminescence	Kogakuin Univ. 1　Eiichiro Niikura 1, Shoichiro Takeda 1, Hideo Kawanishi 1
	7	Exciton decay processes in AlGaN alloys	Fukui Univ. 1,Kanazawa Univ. 2,Mie Univ. 3　*Tomohide Sakai 1,Naoto Nakagawa 1,Masataka Suzuki 1,Kazutoshi Fukui 1,Syuniti Naoe 2,Hideto Miyake 3,Kazumasa Hiramatsu 3
	8	Crystal anisotropy effect on excitonic luminescence in AlGaN	Fukui Univ. 1, Kanazawa Univ. 2, Mie Univ. 3　*Kishida Masaaki 1, Fukui Kazutoshi 1, Nakagawa Naoto 1, Naoe Syunichi 2, Miyake Hideto 3, Hiramatsu Kazumasa 3
13.4 III-V Nitride Epitaxial Growth
September 6 9:00〜18:15
6a-ZS-　/ I
	1	Two-step Nitridation Technique on Sapphire Substrate in RF-MBE InN Growth	Fukui Univ.　*Iwao Kosuke 1, Yamamoto Akio 1, Hashimoto Akihiro 1
	2	Suppression effect of N2+ ions during film growth of InN on Si substrate by ECR-MBE method	Osaka Inst.of Tech 1, Ele .Info. andCom. Eng. andAppl. Phys. 2,　*Tagawa Sumito 1, Tai Tooru 1, Ueda Hayato 1, Iguti Akira 1, Itou Takeshi 1, Onimaru Msashi 1, Harada Yshiyuki 2, Ydo Tokuo 1,
△	3	Growth of InN films on Si substrates by IR-lamp-heated RF-MBE	Dept. of Photonics, Ritsumeikan Univ. 1, The Organization for the Promotion of the COE Program, Ritsumeikan Univ. 2, EpiQuest, Inc. 3　*Bungi Yu 1, Mori Yasuaki 3, Araki Tsutomu 1, Nanishi Yasushi 1, Suzuki Akira 2
△	4	Effect of atomic hydrogen irradiation on optical property of InN grown by RF-MBE	Dept. of Photonics Ritsumeikan Univ. 1,Center for Promotion of the COE Program 2　*Kusashio Takuya 1,Hukuda Takayuki 1, Muto Daisuke 1,Noda Mituhiko 1,Akagi Takanobu 1,Naoi Hiroyuki 2,Araki Tutomu 1,Nanishi Yasushi 1,2
△	5	Study on InN etching by hydrogen-nitrogen mixed gas plasma irradiation	Dept. of Photonics 1, Res. Org. of Sci. & Eng. 2, Ritsumeikan Univ.　Nobuyuki Wada 1, Shinya Sawada 1, Tomohiro Yamaguchi 2, Tsutomu Araki 1 and Yasushi Nanishi 1
	6	Crystal Growth of cubic InN on YSZ(001) vicinal substrate by RF-MBE	The Univ. of Tokyo 1　*Nakamura Teruyuki 1, Kataoka Takahiro 1, Katayama Ryuji 1, Onabe Kentaro 1
		Break 10:30〜10:45
△	7	Growth of position-controlled InN nano-columns on patterned GaN substrates by ECR-MBE	Dept. of Photonics, Ritsumeikan Univ. 1,Dept. of Electrical and Electronic Engineering, Mie Univ. 2　*Tamiya Hidetoshi 1,Harui Satoshi 1, Yamaguchi Taihei 1, Akagi Takanobu 1, Miyake Hideto 2, Hiramatsu Kazumasa 2, Araki Tsutomu 1, Nanishi Araki 1
△	8	TEM characterization of microstructure of position-controlled InN nano-columns	Ritsumeikan Univ.1, Mie Univ.2　*Harui Satoshi1, Tamiya hidetoshi1, Akagi takanobu1, Miyake hideto2, Hiramatsu Kazumasa2, Araki tsutomu1, Nanishi Yasushi1
	9	Epitaxial growth of cubic InN on PSD-HfN buffer layer	The University of Tokyo 1.2,KAST 3,JST-CREST 4　*Ohba Remi 1,Mitamura Kazuya 2,Ohta Jitsuo 2.3,Aoyama Akira 2,Nakano Takayuki 2,Fujioka Hiroshi 2.3,Oshima Masaharu 1.4
	10	Epitaxial growth of InN films on EuN buffer layer by PLD method	Tokyo Univ. 1,2, KAST 3, JST-CREST 4　*Shimomoto Kazuma 1, Mitamura Kazuya 1, Ohba Remi 2, Kobayashi Atsushi 1, Ohta Jitsuo 1,3, Fujioka Hiroshi 1,3, Oshima Masaharu 2,4
	11	RF-MBE growth of InGaN on 4H-SiC (0001) and (000-1) substrates	Saitama Univ. 1, CREST-JST. 2 　*Orihara Misao 1,2, Sikata Gou 1, Inoue Takeru 1, Tsukakosi Yusuke 1,Hijikata Yasuto 1, Yaguchi Hiroyuki 1,2, Yoshida Sadafumi 1,2,
		Lunch 12:00〜13:00
6p-ZS-　/ I
	1	Young Scientist Award for the Presentation of an Excellent Paper Polarization properties in InGaN/GaN quantum well active layer fabricated on semipolar {11-22} GaN bulk substrates	Kyoto Univ. 1,Nichia Corp. 2　*Masaya Ueda 1, Mitsuru Funato 1, Yoichi Kawakami 1, Yukio Narukawa 2, Takashi Mukai 2
	2	Polarity control of InN in hydride vapor phase epitaxy on {0001}GaN substrates	Dept. Appl. Chem. , Tokyo Univ. of Agri. & Tech. 1　*Kamoshita Tomoki 1, Nishizawa Yuuki 1, Togashi Rie 1, Murakami Hisashi 1, Kumagai Yoshinao 1, Koukitu Akinori 1
	3	Temperature dependence of N-polarity InN decomposition in various ambient	Dept. Appl. Chem., Tokyo Univ. of Agri. & Tech. 1　*Togashi Rie 1, Kamoshita Tomoki 1, Nishizawa Yuuki 1, Murakami Hisashi 1, Kumagai Yoshinao 1, Koukitu Akinori 1
▲	4	Growth and characterization of Mg-doped N-polar InN films	Graduate School of Electrical and Electronics Engineering1, VBL 2, InN-Project as a CREST-program of JST, Chiba Univ. 3　*Wang Xinqiang, Che SongBek, Ishitani Yoshihiro, Yoshikawa Akihiko
△	5	Study on growth of p-type Mg-doped InN and its electrical properties	Dept. of Photonics Ritsumeikan Univ. 1, Res. Org. of Sci. & Eng. Ritsumeikan Univ. 2, Lawrence Berkeley National Lab. 3　*Muto Daisuke 1, Noda Mitsuhiko 1, Yu KinMan 3, Ager Joel 3, Walukiewicz Wladek 3, Yamaguchi Tomohiro 2, Araki Tsutomu 1, Nanishi Yasushi 1
△	6	Study on surface electron accumulation on A-plane InN by electrolyte-based capacitance-voltage measurements	Dept. of Photonics,Rirsumeikan Univ.1, Res. Org. of Sci. & Eng., Ritsumeikan Univ.2, Lawrence Berkeley National Laboratory 3　Mitsuhiko Noda 1, Daisuke Muto 1, K.M.Yu 3, R.E.Jones 3, W.Walkiewicz 3, Tomohiro Yamaguchi 2, Tsutomu Araki 1, Yasushi Nanishi 1
	7	Electronic Structure of edge dislocation in InN films: First-Principle Study	Graduate School of Science, Chiba Univ.　*Takei Yuki 1, Nakayama Takashi 1
	8	Study of carrier scattering mechanism of InN films by polarization-controlled IR reflectance measurements	Graduate School of Electronics and Electrical Engineering Chiba Univ. 1, VBL Chiba Univ. 2, JST-CREST 3 　*Ishitani Yoshihiro 1,2,3, Fujiwara Masayuki 1, Wang Xinqian 3, Che Song-Bek 1,2,3, Yoshikawa Akihiko 1,2,3
	9	Peculiarity of the band structure calculation of InN	Tokai Univ,1　*T Abe,T Inushima
	10	Growth and characterization of quaternary alloy (In,Ga,Cr)N	ISIR Osaka Univ.　Shigeya Kimura 1,Shuichi Emura 1, Katsuhiko Tokuda 1, Yi Kai Zhou 1, Shigehiko Hasegawa 1, Hajime Asahi 1
		Break 15:30〜15:45
	11	Growth and Characterization of AlGaN/GaN structure with 1 monolayer InN	AIST PERC 1,JST-CREST 2,Nihon Univ. 3 　*Senbongi Hiroshi 1,2,3,Xu-Qiang Shen 1,2,Kitamura Toshio 1,2,Nakamura Katsumitsu 3,Takizawa Takeo 3,Okumura Hajime 1,2
	12	In-situ monitoring and control of very thin InN well/GaN barrier MQWs structures grown by MOCVD	Chiba Univ. 1, Chiba Univ. VBL 2, Chiba Univ. InN-Project as a JST-CREST 3　*Fujimoto Tetsuji 1, Che Song-Bek 1 2 3, Ishitani Yoshihiro 1 2 3, Yoshikawa Akihiko 1 2 3
	13	In-situ monitoring of InN/GaN multi-quantum wells growth process and study of one-monolayer InN epitaxy mechanism	Graduate School of Electrical and Electronics Engineering1, VBL2, InN-Project as a CREST-program of JST, Chiba University3　*Hashimoto Naoki 1, Yuki Akihiko 1, Saito Hideyuki 1, Hwang Eun-Sook 1, Wang Xinqiang 3, Che Song-Bek 1,2,3, Ishitani Yoshihiro 1,2,3, Yoshikawa Akihiko 1,2,3
	14	Growth and characterization of 1ML InN/GaN multi-quantum wells on bulk GaN substrates with low dislocation densities	Graduate School of Electrical and Electronics Engineering 1, VBL 2, InN-Project as a CREST-program of JST, Chiba Univ. 3　*Hideyuki Saito 1, Song-Bek Che 1 2 3, Kazuaki Matsui 1, Naoki Hashimoto 1, E.S.Hwang 1, Xinqiang Wang 1 2 3, Yoshihiro Ishitani 1 2 3, Akihiko Yoshikawa 1 2 3
	15	Characterization of optical properties of InN/InGaN MQWs by using high-density photoexcitation	Graduate School of Electrical and Electronics Engineering1, VBL2 and InN-Project as a CREST-program of JST, Chiba University3, Department of Environmental Sciences, Teikyo University of Science & Technology4　*Songbek Che1,2,3, Mitsuru Naganuma4, Xinqiang Wang3, Yoshihiro Ishitani1,2,3, Akihiko Yoshikawa1,2,3
	16	Deterioration of nitrogen-face of MOVPE InN in NH3 ambient	Univ. of Fukui 1　*Kenichi Sugita 1, Yasuhiko Nagai 1, Akihiro Hashimoto 1, Akio Yamamoto 1
	17	MOVPE growth and characterization of InxGa1-xN(x〜0.4)	Fukui Univ. 1　*Horie Masaru 1,Sugita Kennichi 1,Hashimoto Akihiro 1,Akio Yamamoto 1
	18	Dependence of Mis-Orientation Angle of MOCVD Grown GaN and AlN Films on Mis-orientation Angle of Sapphire Substrate.	Nippon Inst. of Tech.1,Namiki Precision Jewel Co., Ltd.2 　*Seong Woo.Kim1, Hideo Aida2,Toshimasa.Suzuki1
	19	Effect of thermal cleaning process on the crystalline quality of GaN grown on sapphire substrate by MOVPE	Grad. School of Sci. & Eng., Yamaguchi Univ.　*A Nakamura 1, N Yanagita 1, T Murata 1, K Hoshino 1, K Tadatomo
△	20	Influence of inclination direction of misoriented(0001) sapphire substrate on InGaN grown by MOVPE	Grad. School od Sci.& Eng.,Yamaguchi Univ. 1　*Murata Tohru 1,Hoshino Katsuyuki 1,Tadatomo Kazuyuki 1
13.4 III-V Nitride Epitaxial Growth
September 7 9:00〜11:45
7a-ZR-　/ I
	1	JJAP Paper Award Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar{1122} GaN Bulk Substrates	Kyoto University1，Nichia Corporation2　Mitsuru Funato, Masaya Ueda, Yoichi Kawakami, Yukio Narukawa1, Takao Kosugi1, Masayoshi Takahashi1 and Takashi Mukai1
△	2	Fabrication and characterization of multi-color InGaN/GaN micro-facet light emitting diodes	Kyoto Univ. 1,Nichia Corporation 2　*Hayashi Keita 1,Kondou Takeshi 1,Ueda Masaya 1,Funato Mituru 1,Narukawa Yukio 2,Mukai Takashi 2,Kawakami Youichi 1
	3	Growth of thick GaInN on c-plane,a-plane and m-plane GaN.	Fac.Sci.and Technol Meijo Univ 1　*Miura Aya 1,Senda Ryota 1,Iida Daisuke 1,Kawashima Takeshi 1,Iwaya Motoaki 1,kamiyama Satoshi 1,Amano Hiroshi 1,Akasaki Isamu 1
△	4	Growth of thick GaInN on patterned non-polor GaN	Fac.Sci.and Technol Meijo Univ 1　*Senda Ryota 1,Miura Aya 1,Kawashima Takeshi 1,Iida Daisuke 1,Tetsuya Nagai 1,Iwaya Motoaki 1,kamiyama Satoshi 1,Amano Hiroshi 1,Akasaki Isamu 1
		Break 10:15〜10:30
	5	Growth of GaN on nano-etching sapphire substrate by MOCVD	Tokushima Univ. 1,SCIVAX 2　M.Tohno 1, T.Okimoto 1, A.Kato 1, K.Nishino 1, Y.Naoi 1, ○S.Sakai 1, T. Kusuura 2, A. Mitra1 2
	6	Selective growth of GaN film on sapphire substrate treated by electron-beam	Shizuoka Univ. 1,CASI, Osaka Univ. 2,NIMS 3　Yuba Keigo 1,Sugihara Takayasu 1,Matsumura Hisashi 2,Sumiya Masatomo 3,Fuke Shunro 1
	7	Selective growth of GaN on sapphire substrates treated with focused laser pulses	CASI, Osaka Univ. 1,Faculty of Engineering, Shizuoka Univ. 2, Graduate School of Engineering, Osaka Univ. 3　*Matsumura Hisashi 1, Fuke Shunro 2, Tamaki Takayuki 3, Ozeki Yasuyuki 3, Itoh Kazuyoshi 3, Kanematsu Yasuo 1
	8	Mechanism of stress reduction in GaN films on Si(111) using 3C-SiC intermediate layers	Covalent Materials Corp. 1　*Jun Komiyama 1,Yoshihisa Abe 1, Akira Yoshida 1, Hiroshi Ohishi 1, Shunichi Suzuki 1, Hideo Nakanishi 1
	9	ポーラスSi基板上へのGaNのMOCVD成長	Dept. of Environmet Tech. and Urban Planning, Nagoya Inst. of Tech.1, Dept. of Eng. Phys., Electron. and Mech., Nagoya Inst. of Tech.2, Silicon Technology Corp.　Hiroyasu Ishikawa1, Keita Shimanaka1, Fumiyuki Tokura2, Yasuhiko Hayashi1, Yousuke Hara3, Masami Nakanishi3
13.4 III-V Nitride Epitaxial Growth
September 7 10:00〜18:30
7a-ZS-　/ I
	1	Epitaxial growth of AlN single crystals in the Ca-Sn metal solution system.	Osaka Univ. 1,NGK Insulators, LTD. 2,TOYODA GOSEI CO., LTD. 3　*Bessho Masahiro 1,Kishimoto Hiroki 1,Miyoshi Naoya 1,Kawamura Fumio 1,Yoshimura Masashi 1,Kitaoka Yasuo 1,Mori Yusuke 1,Sasaki Takatomo 1,Iwai Makoto 2,Imai Katsuhiro 2,Yamazaki Shiro 3
	2	Solution growth of 2” AlN　single crystal	Sumitomo Metal Industries, Ltd., Corporate R&D Lab.　1　Kazuhito.Kamei, Nobuyuki.Yashiro, Tsutomu.Tanaka, Nobuhiro.Okada, Akihiro.Yauchi
△	3	Crystallinity of AlN single crystal grown by solution growth technique	Sumitomo Metal Industries, Ltd., Corporate R&D Lab. 1　*Yashiro Nobuyoshi 1, kamei Kazuhito 1, Tanaka Tsutomu 1, Okada Nobuhiro 1, Yauchi Akihiro 1
	4	Analysis of phase stability for AlN growth using Li3N and Al	Kyushu Univ. 1, Kyushu Univ. 2　*Wakigawa Tatsuhito 1, Kangawa Yoshihiro 1,2, Kakimoto Koichi 1,2
▲	5	Simulation for growth rate and thermal stress of AlN crystal by sublimation method	RIAM, Kyushu Univ. 1, R & D Division, Furukawa Co., Ltd. 2　*Chen Xuejiang 1, Liu Lijun 1, Tezuka Hiroshige 2, Usuki Yoshiyuki 2, Kakimoto Koichi 1
		Break 11:15〜11:30
	6	Relationship between convective flow and growth rate of GaN by liquid phase epitaxy	Kyushu Univ. 1, Osaka Univ. 2　Kakimoto Koichi 1, *Kangawa Yoshihiro 1, Liu Lijun 1, Kawamura Fumio 2, Mori Yusuke 2, Sasaki Takatomo 2
	7	Dislocation behavior in AlN single crystal grown by sublimation method.	Sumitomo Electric Industries, Ltd.　*Miyanaga Michimasa 1, Mizuhara Naho 1, Fujiwara Shinsuke 1, Kawase Tomohiro 1, Nakahata Hideaki 1
	8	Growth of AlN intermediate layer on sapphire for high-temperature growth of AlN by HVPE	Dept. Appl. Chem., Tokyo Univ. of Agri. & Tech. 1, Tokuyama Corporation 2　*Tajima Jumpei 1, Kubota Yuki 1, Nagashima Toru 2, Togashi Rie 1, Murakami Hisashi 1, Kumagai Yoshinao 1, Takada Kazuya 2, Koukitu Akinori 1
	9	Growth of Si-doped AlN layers by hydride vapor phase epitaxy	Dept. Appl. Chem., Tokyo Univ. of Agri. & Tech. 1, Tokuyama Corporation 2　*Kubota Yuki 1, Tajima Jumpei 1, Nagashima Toru 2, Togashi Rie 1, Murakami Hisashi 1, Kumagai Yoshinao 1, Yanagi Hiroyuki 2, Koukitu Akinori 1
	10	Low-pressure HVPE growth of AlN with low-temperature AlN-buffer layer	Mie Univ. 1　*Narukawa Mitsuhisa 1, Kishino shinya 1, Katagiri Yusuke 1, Yamamoto Yusuke 1, Miyake Hideto 1, Hiramatsu Kazumasa 1
	11	Preparation of a freestanding AlN substrate by hydride vapor phase epitaxy using (111)Si as a starting substrate	Dept. Appl. Chem., Tokyo Univ. of Agri. & Tech. 1, Tokuyama Corporation 2　*Kumagai Yoshinao 1, Nagashima Toru 2, Murakami Hisashi 1, Takada Kazuya 2, Koukitu Akinori 1
		Lunch 13:00〜14:00
7p-ZS-　/ I
	1	AlGaN Growth on grooved sapphire substrate by hydride vapor phase epitaxy	Furukawa Co Ltd 1,Kyushu Univ 2, Kyushu Univ ASTEC 3, 　 * Nishikouri Yutaka 1, Sato Tadashige 1,Sunakawa Haruo 1,Matsueda Toshiharu 1,Kugiyama Yuta 2,Kuwano Noriyuki 3,
	2	HVPE growth of high quality AlxGa1-xN layers on GaN substrates	Tokyo Univ. of Agri. & Tech. 1　*Hisashi Murakami, Fumitaka Satoh, Kazuhiro Akiyama, Hiroshi Muto, Katsuyuki Shibata, Munenobu Yamashita, Yoshinao Kumagai, Akinori Koukitu
	3	Relation between the threading dislocation density and point defect density in AlN and GaN	Tohoku Univ. 1, NICP-ERATO JST 2, Univ. of Tsukuba 3, UCSB 4, NGK Insulators 5, Waseda Univ. 6　Shugefusa Chichibu 1,2, Takahiro Koyama 1,2, Mariko Sugawara 3, Takuya Hoshi 1, Pablo Cantu 4, John F Kaeding 4, Rajat Sharma 4, Kei Kosaka 5, Keiichiro Asai 5, Shigeaki Sumiya 5, Tomohiko Shibata 5, Mitsuhiro Tanaka 5, Takeyoshi Onuma 1,2, Stacia Keller 4, Umesh K Mishra 4, Steven P DenBaars 2,4, Shuji Nakamura 2,4, Takayuki Sota 6, Akira Uedono 3
	4	Varied Relaxation of Thin AlN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition with Controlled Initial Growth	INQIE Univ. of Tokyo 1, RCAST Univ. of Tokyo 2, IIS Univ. of Tokyo 3　*Arita Munetaka 1, Arakawa Yasuhiko 1-3
	5	TEM-Observation of Dislocations in AlGaN Layer Grown by MOVPE on a Stripe-Patterned Sapphire Substrate	Kyushu Univ 1, Kyushu Univ ASTEC 2, Furukawa Co Ltd3　Kugiyama Yuta 1, Kuwano Noriyuki 1 2, Nishikouri Yutaka 3, Sato Tadashige 3, Usui Akira 3
	6	Low-temperature deposition of AlN films grown by CS-MBE technique using AlN powders	Kogakuin Univ　*Watanabe Kenji 1, Arai Masatoshi 1, Sugimoto Kouiti ,1 Takeda Kazuhisa 1, Honada Toru 1,
△	7	Comparative study of AlN grown on 6H-SiC on-axis substrates with various treatments including high-temperature gas etching	Kyoto Univ. 1　*Hironori Okumura 1, Masahiro Horita 1, Jun Suda 1, Tsunenobu Kimoto 1
	8	Characteristics of RT-grown AlN films on C-face 6H-SiC (000_1)	The University of Tokyo 1,2,4, KAST 3, JST-CREST 5.　*M. H. Kim 1, J. Ohta 2,3, A. Kobayashi 2, H. Fujioka 2,3 , and M. Oshima 1,4,5
		Break 16:00〜16:15
△	9	Epitaxial growth of non-polar AlN films on ZnO substrates	The University of Tokyo 1, KAST 2, Mitsubishi Chemical Group Science and Technology Research Center 3　　*Ueno Kohei 1, Kobayashi Atsushi 1, Ohta Jitsuo 1,2, Fujioka Hiroshi 1,2, Amanai Hidetaka 3, Nagao Satoru 3, Horie Hideyoshi 3
	10	Influence of molybdenum bottom electrodes on crystal orientation of AlN thin films	AIST 1, Kyushu Univ. 2　Kamohara Toshihiro 1, Akiyama Morito 1, Kuwano Noriyuki 2
	11	Giant piezoelectric response of AlN thin films prepared on polyimide films	AIST　Akiyama Morito, Morofuji Yukari, Kamohara Toshihiro, Ueno Naohiro
	12	In situ gravimetric monitoring of decomposition rate on (0001) c-plane sapphire in flowing NH3	Dept. Appl. Chemistry, Tokyo Univ. of Agri. & Tech. 1　Akiyama Kazuhiro, Ishii Yasuhiro, Murakami Hisashi, Kumagai Yoshinao, Koukitu Akinori
	13	Evaluation of lattice constants of a-face AlGaN and AlBN thin films grown on SiC (11-20) substrates	NTT Basic Research Labs. 1　*Akasaka Tetsuya 1, Kobayashi Yasuyuki 1, Makimoto Toshiki 1
	14	Thin film growth of h-BN on epitaxial-graphene layers by MOVPE	NTT BRL 1　*Kobayashi Yasuyuki 1, Hibino Hiroki 1, Akasaka Tetsuya 1, Makimoto Toshiki 1
	15	Heteroepitaxial growth of single-crystal AlN on diamond (111) substrate	NTT Basic Research Laboratories　*Taniyasu Yoshitaka 1, Kasu Makoto 1, Makimoto Toshiki 1
	16	Study on the growth of high Al composition AlGaN single-crystalline layer by sputtering method	Tokyo Denki Univ. 1　*Koyama Takanori 1,Hamano Masafumi 1,Shinoda Hiroyuki 1, Mutsukura Nobuki 1,
	17	Growth of AlGaN single-crystalline layer by UHV sputtering method（V）	Tokyo Denki Univ. 1　*Hamano Masafumi 1, Koyama Takanori 1, Shinoda Hiroyuki 1, Mutsukura Nobuki 1,
13.4 III-V Nitride Epitaxial Growth
September 8 9:00〜12:00
8a-ZQ-　/ I
	1	The analysis of decomposition process of GaN(0001) and (000\overline{1}) surfaces under hydrogen atmosphere using first-principle calculation	Tokyo Univ. of Agri. & Tech.　*Suzuki Hikari 1, Togashi Rie 1, Murakami Hisashi 1, Kumagai Yoshinao 1, Koukitu Akinori 1
	2	Characterization of in-plane epitaxial relationships of AlN/Cu(111) by the use of first-principle calculations	The Univ. of Tokyo 1, KAST 2, Tottori Univ.　Inoue Shigeru 1, Okamoto Koichiro 1, Nakano Takayuki 2, Ohta Jitsuo 1,2, Fujioka Hiroshi 1,2, Ishii Akira 3
	3	First-principles study of compositional fluctuations and residual stresses of InGaN	Tokyo Univ. of Sci. 1　Kiichiro Mukose 1
	4	First-principles simulation for dissociation of N2 molecule in GaN growth process using Na flux method	NGK Insulators, Ltd. 1, Graduate School of Engineering, Osaka Univ. 2, Inst. of Scientific and Industrial Research, Osaka Univ. 3　*Yamamura Yoshihiko 1, Kawahara Minoru 2, Morikawa Yoshitada 3
▲	5	Behavior of plasma-induced damages in n-GaN under UV illumination	Tokyo Metropolitan Univ. 1　*Ikadai Yuuki 1, Ochiai Shunsuke 1, Nakamura Seiji 1, Suhara Michihiko 1, Okumura Tsugunori 1
		Break 10:15〜10:30
	6	Time resolved photoluminescence spectroscopy in a (11-22) GaN	Nagoya Univ.1　*Kim Eunhee,Tanikawa Tomoyuki,Honda Yoshio,Yamaguchi Masahito,Sawaki Nobuhiko
	7	Cross-sectional characterization of stress distribution in GaN thin films using micro-Raman Spectroscopy	Covalent Materials Corp 1,NIMS 2　*Tomonori Uchimaru 1,Minoru Osada 2,Hideyuki Kanai 1,Jun Komiyama 1,Shunichi Suzuki 1,Hideo nakanishi 1
	8	Modulation spectroscopic investigation on lattice polarity of GaN	The Univ. of Tokyo 1, Saitama Univ. 2　Katayama Ryuji 1, Yaguchi Hiroyuki 2, Onabe Kentaro 1
	9	Effects of pH and mixture of C2H5OH in electrolyte on photoelectrolysis using a GaN electrode	CIR Tohoku Univ. 1,IMR Tohoku Univ. 2　*Sato Keiichi 1,Kato Takashi 1,Fujii Katsushi 1,Cho Meoungwhan 1,2,Yao Takafumi 1,2
	10	Photoelectrochemical properties of GaN crystals grown by the Na flux method	Tohoku Univ. CIR 1, Tohoku Univ. IMR 2, Tohoku Univ. IMRAM 3　*Kato Takashi 1, Tsutomu Minegishi 1, Fujii Katsushi 1, Yamada Takahiro 3, Yamane Hisanori 3, Yao Takafumi 1,2
	11	Preparation and CL properties of high brightness Zn-doped GaN crystals by carbothermal reduction and nitridation	Hokkaido Univ. 1,NIMS 2,Horiba, Ltd. 3,Sumitomo Seika Co. 4　*H. Otani 1,A. Miura 1,S. Shimada 1,T. Sekiguti 2,M. Yokoyama 3,B. Mizobuti 4
13.4 III-V Nitride Epitaxial Growth
September 8 9:00〜15:00
8a-ZR-　/ I
△	1	Analysis of ITO/p-GaN interfaces by synchrotron radiation hard X-ray photoemission spectroscopy and their electrical characteristics (2)	School of Engineering, The Univ. of Tokyo 1, IIS, The Univ. of Tokyo 2, Showa Denko KK 3, JAEA 4, NIMS 5, JST-CREST 6　*Toyoshima Yasushi 1, Horiba Koji 1,6, Ohta Jitsuo 2, Fujioka Hiroshi 2, Oshima Masaharu 1,6, Miki Hisayuki 3, Takeda Yukiharu 4, Saitoh Yuji 4, Yoshikawa Hideki 5, Kobayashi Keisuke 5
△	2	A　p-type electrode of GaN based LED with double ITO layers	Grad. School of Sci. & Eng., Yamaguchi Univ.1, Yamaguchi Pref. Ind. Tech. Inst.2　*Mitui Yasutomo 1, Isida Fumio 1, Yoshimura Kazumasa 2, Hosino Katuyuki 1, Tadatomo kazuyuki 1
△	3	Control of grain shape on Moth-eye structures	Meijo Univ.Fac.Sci.&Tech. 1　*Seko Tomotyo 1,Ando jun 1,Kumagai Mitsuyasu 1,Nitta Shugo 1,Iwaya Motoaki 1,Kamiyama Satoshi 1,Amano Hiroshi 1,Akasaki Isamu 1
	4	The stripe period dependence of the InGaN-LEDs fabricated on the patterned sapphire substrate.	Yamaguchi Univ. 1　*Kono Soichiro,Hoshino Katuyuki,Tadatomo Kazuyuki
	5	Fabrication of GaN-based light emitting diodes on patterned sapphire substrates with thick SiO2 masks	Grad. School of Sci. & Eng., Yamaguchi Univ. 1　*Hoshino Katsuyuki 1, Murata Toru 1, Araki Masahiro 1, Tadatomo Kazuyuki 1
		Break 10:15〜10:30
△	6	Realization of low resistance n-contact for a-plane GaN based LED	Meijo Univ.　*M. Hayashi, T. Hayakawa, D. Iida, Y. Kasamatsu, A. Miura, T. Kawashima, S. Nitta, M. Iwaya, S. Kamiyama, H. Amano and I. Akasaki
	7	Electrode process of InGaN/GaN QW nanocolumn LEDs on n-(111) Si substrates	Sophia Univ. 1,CREST Japan Science and Technology Agency 2　*Sakamoto Koki 1,Sekiguchi Hiroto 1,2,Kikuchi Akihiko 1,2,Kishino Katsumi 1,2
	8	Study on inside absorption for GaN-based schottoky-type LEDs	Kogakuin Univ. 1　*Komiyama Shigetoshi 1,Kobayashi Toshiaki 1,Yoshioka Kaori 1,Mashiyama Yoshihiro 1,Honda Tohru 1
△	9	Optical gain measurement of Eu doped AlGaN	Toyohashi Univ. Technol. 1, JAEA 2　*Simojo Takashi 1, Kawai Hiroaki 1, Wakahara Akihiro 1, Okada Hiroshi 1, Sato Shin-ichiro 2, Ohshima Takeshi 2
	10	Irradiation effects on rare-earth doped GaN thin films	Toyohashi Univ. Technol. 1, JAEA 2　*Okada Hiroshi 1, Nakanishi Yasuo 1, Wakahara Akihiro 1, Yoshida Akira 1, Sato Shin-ichiro 2, Ohshima Takeshi 2
	11	Strong polarization of AlN light-emitting diode due to a negative crystal-field splitting energy	NTT Basic Research Laboratories 1　*Taniyasu Yoshitaka 1, Kasu Makoto 1, Makimoto Toshiki 1
		Lunch 12:00〜13:00
8p-ZR-　/ I
	1	280 nm-deep UV LEDs constructed using high-quality AlN templates and flow-modulated short-period superlattices	RIKEN 1, Tokyo Tech 2, Ritsumeikan Univ. 3　Misaichi Takeuchi 1, Shin Ooishi 2, Takumi Ohtsuka 2, Tomohiro Maegawa 2, Koji Kawasaki 2, Yoshinobu Aoyagi 3
△	2	280nm	Tokyo Tech 1,Riken 2,Ritumei Univ.3　*Ooishi Shin 1,Takeuchi Misaichi 2,Kawasaki Kouji 1,Aoyagi Yoshinobu 3,Ootsuka Takumi 1,Maegawa Tomohiro 1
	3	Vertical Deep-UV LED of 280nm wavelength using the light absorbing super-lattice and laser lift-off technique	Tokyo Tech. 1,RIKEN 2,Ritsumei UNIV. 3　*Tomohiro Maegawa 1,Misaichi Takeuchi 2 1,Shin Ooishi 1,Takumi Ohtsuka 1,Koji Kawasaki 1,Yoshinobu Aoyagi 3
△	4	Improvement of light extraction efficiency of 280nm Deep UV LED with Al reflect layer	Tokyo Tech 1, RIKEN 2, Ritsumeikan Univ. 3,　Takumi Ohtsuka 1, Shin Ooishi 1, Tomohiro maegawa 1, Misaichi Takeuchi 2 1, Koji Kawasaki 1, Yoshinobu Aoyagi 3,
	5	Improvement in carrier injection efficiency of AlGaN deep UV LED by control of top barrier thickness	Tokyo Tech 1,RIKEN 2,Ritsumeikan Univ. 3　*Koji Kawasaki 1, Takumi Ohtsuka 1, Shin Ooishi 1, Tomohiro Maegawa 1, Misaichi Takeuchi 2, Yosinobu Aoyagi 3
	6	Fabrication and current injection emission of quaternary InAlGaN quantum dots emitting in deep-UV	RIKEN 1　*Fujikawa Sachie 1, Hirayama Hideki 1
	7	CW milliwatt operation of 261nm AlGaN MQW Deep-UV LED	RIKEN 1,Saitama Univ. 2　*Yatabe Toru 1,2,Noguchi Norimichi 1,2,Kamata Norihiko 2,Hirayama Hideki 1,2
△	8	Single-peaked operation of 231nm AlGaN MQW Deep-UV LED	RIKEN 1,Saitama Univ. 2　*Norimichi Noguchi 1.2,Toru Yatabe 1.2,Norihiko Kamata 2, Hideki Hirayama 1
13.5 Group-IV Crystals and IV-IV Alloys
September 4 9:30〜17:45
4a-E-　/ I
	1	Characterization of bonding structures of directly bonded hybrid crystal orientation substrates	Covalent Materials Co., Ltd. 1, Graduate School of Eng., Nagoya Univ. 2, Graduate School of Eng. Sci., Osaka Univ. 3, ESI, Nagoya Univ. 4, Rigaku Corp. 5　*Eiji Toyoda 1,2, Akira Sakai 3, Hiromichi Isogai 1, Takeshi Senda 1, Koji Izunome 1, Kazuhiko Omote 5, Osamu Nakatsuka 2, Masaki Ogawa 4, Shigeaki Zaima 2
	2	Improvement of thermal stability of sSOI structures by deposition of TEOS oxide film	Advanced Research Labo. Musashi Institute of Technology 1, Soitec 2, Soitec Asia 3　Hoshi Yusuke 1, Sawano Kentarou 1, Ian Cayrefourcq 2, Yoshimi Makoto 3, Shiraki Yasuhiro 1
	3	Plastic Deformation during Ge Condensation for Ge-rich SiGe-on-Insulator Substrates 1.Multiple Slip Deformation	ASET-MIRAI 1, AIST-MIRAI 2, The Univ. of Tokyo 3　*Hirashita Norio 1, Moriyama Yoshihiko 1, Nakaharai Shu 1, Tezuka Tsutomu 1, Sugiyama Naoharu 1, and Takagi Shiniti 2,3
	4	Plastic Deformation during Ge Condensation for Ge-rich SiGe-on-Insulator Substrates 2.Planar Defect Formation	MIRAI-ASET 1, MIRAI-AIST 2, The Univ. of Tokyo 3　*Hirashita Norio 1, Moriyama Yoshihiko 1, Nakaharai Shu 1, Tezuka Tsutomu 1, Sugiyama Naoharu 1, Takagi Shiniti 2,3
	5	Crystallinity estimation of Ge-condensed SGOI substrates by means of x-ray micro diffractometry	Univ. of Hyogo 1, MIRAI-ASET 2　Tsusaka Yoshiyuki 1, Abe Maiko 1, Takahata Sayuri 1, Takano Hidekazu 1, Kagoshima Yasushi 1, Matsui Junji 1, Usuda Kouji 2, Moriyama Yoshihiko 2, Hirashita Norio 2, Sugiyama Naoharu 2
		Break 10:45〜11:00
	6	CHEMKIN analysis of SiGe epitaxial growth on Si(001) substrate	Riken 1, SUMCO TECHXIV 2　Imai Masato 1,2, Miyamura Yosiji 1,2, Murata Daisuke 1,2, Kanda Takahiro 1,2
	7	Surface roughness control of SiGe layer deposited by Ion Beam Sputtering toward strained Si fabrication	Gred. School of Natural Sci. & Tech. of Kanazawa Univ. 1　*Sakaguchi Yuta 1, Sasaki Kimihiro 1
	8	Strain-Relaxed Si1-xGex and Strained Si Layer Grown by Sputter Epitaxy	Tokyo Univ. of Agric. & Technol.1, NICT 2　*Hanafusa Hiroaki 1,Suda Yoshiyuki 1,Kasamatsu Akifumi 2,Hirose Nobumitsu 2,Mimura Takashi 2,Matsui Toshiaki 2,
	9	Growth temperature dependence of morphology of step-graded SiGe grown on Si(110) substrate	CCST Univ. of Yamanashi 1, IMR Tohoku University 2, ARL Musashi Inst. of Technology 3　*Watanabe Masato 1, Arimoto Keisuke 1, Yamanaka Junji 1, Nakagawa Kiyokazu 1, Usami Noritaka 2, Nakajima Kazuo 2, Sawano Kentarou 3, Shiraki Yasuhiro 3
		Lunch 12:00〜13:00
4p-E-　/ I
	1	A calculation on the hole density dependence of hole effective mass in compressively strained Ge	CCST Univ. of Yamanashi 1, ARL Musashi Inst. of Technology 2, Univ. of Tokyo 3, IMR Tohoku Univ. 4　*Arimoto Keisuke 1, Kunishi Yugo 2, Sawano Kentarou 2, Sato Yu 2, Toyama Kiyohiko 3, Okamoto Toru 3, Usami Noritaka 4, Nakagawa Kiyokazu 1, Shiraki Yasuhiro 2
▲	2	Demonstration of SiGe heterostructures with room-temperature 2DHG drift mobility and carrier density exceeding those of 2DEG	Advanced Research Laboratories (ARL), Musashi Inst. of Technology 1, Keio Univ. 2　M. Myronov 1, K. Sawano 1, K.M. Itoh 2, Y. Shiraki 1
	3	Strained-Si nMOSFET on very thin SiGe relaxed layers fabricated by ion implantation technique	Advanced Research Laboratories (ARL), Musashi Inst. of Technology 1, Univ. of Yamanashi 2　*Kentarou Sawano 1, Atsushi Fukumoto 1, Yusuke Hoshi 1, Kiyokazu Nakagawa 2, Yasuhiro Shiraki 1
	4	Evaluation of threshold voltage in strained Si MOSFET	MIRAI-ASET 1, MIRAI-AIST 2, The Univ.Tokyo 3,　*Sugiyama Naoharu 1, Numata Toshinori 1, Hirashita Norio 1, Irisawa Toshifumi 1, Takagi Shin-ichi 2,3
	5	Influence of oxidation time on interface state of oxide/semiconductor formed by thermal oxidation of Si/strained-SiGe/Si	Univ. of Yamanashi 1, Tohoku Univ. 2, Tokyo Univ. of Sci., Suwa 3, Musashi Inst. of Tech. 4　*Mitsui Minoru 1, Nozawa Akiko 1, Arimoto Keisuke 1, Yamanaka Junji 1, Sato Tetsuya 1, Nakagawa Kiyokazu 1, Usami Noritaka 2, Fukuda Yukio 3, Sawano Kentarou 4, Shiraki Yasuhiro 4
	6	Characterization of Strained Si Wafers by Large-area X-ray Topography	Osaka Univ.1, Meiji Univ. 2, Univ. of Toyama 3　T. Inoue1, Y. Okamoto1, T. Shimura1, H. Watanabe1, A. Ogura2, T. Edo3, S. Iida3
		Break 14:30〜14:45
	7	Characterization of strain relaxation around strained layer edge after mesa isolation with NBD method	MIRAI-ASET 1,MIRAI-ASRC,AIST 2, The Univ. of Tokyo 3　*Koji Usuda 1,Toshifumi Irisawa 1, Tsutomu Tezuka 1, Yoshihiko Moriyama 1,Norio Hirashita 1, and Shin-ichi Takagi 2,3
	8	Crystallinity investigation of compositionally graded SiGe layers by using synchrotron X-ray cross-sectional diffraction (1) – SiGe lattice tilt variation -	Covalent Materials Corporation 1, Univ. of Hyogo 2　Takeshi Senda 1, Koji Izunome 1, Yoshiyuki Tsusaka 2, Kazunori Fukuda 2, Kazuki Hayashi 2, Maiko Abe 2, Sayuri Takahata 2, Junji Matsui 2
	9	Crystallinity investigation of compositionally graded SiGe layers by using synchrotron X-ray cross-sectional diffraction (2) – SiGe lattice rotation -	Covalent Materials Corporation 1, Univ. of Hyogo 2　Takeshi Senda 1, Koji Izunome 1, Yoshiyuki Tsusaka 2, Kazunori Fukuda 2, Kazuki Hayashi 2, Maiko Abe 2, Sayuri Takahata 2, Junji Matsui 2
△	10	Growth of tensile-strained Ge using compositionally step-graded Ge1-xSnx buffer layers on virtual Ge(001) substrates	Graduate School of Eng., Nagoya Univ. 1, Graduate School of Eng. Sci., Osaka Univ. 2, EcoTopia Sci. Inst., Nagoya Univ. 3　*Shimura Yosuke 1, Takeuchi Shotaro 1, Sakai Akira 2, Nakatsuka Osamu 1, Ogawa Masaki 3, Zaima Shigeaki 1
	11	STM observation of initial growth morphology of Ge1-xSnx layers on Ge(001) substrates	Graduate School of Eng. Nagoya Univ. 1, Graduate School of Eng. Sci. Osaka Univ. 2, EcoTopia Sci. Inst. Nagoya Univ. 3　*Masahiro Yamazaki 1, Shotaro Takeuchi 1, Osamu Nakatsuka 1, Akira Sakai 2, Masaki Ogawa 3, and Shigeaki Zaima1
		Break 16:00〜16:15
	12	Observation of initial Ge growth on strained-Si(001) by high-resolution RBS	Kyoto Univ. 1　*Nisikori Masahiro 1,Nakajima Kaoru 1,Suzuki Motohumi 1,Kimura Kenji 1
	13	Size distribution graded Ge nano-dots on Si(100) and its application to a novel soft laser desorption/ionization-mass spectrometry (2)	EMTech AIST 1,ETRI AIST 2　*Nemoto Atsushi 1,Yamamoto Atsushi 2,Sato Hiroaki 1,Torimura Masaki 1,Tao Hiroaki 1
	14	AFM observation of deep pits resulting from three-dimensional morphological evolution in Ge homoepitaxy	NTT MI Lab. 1　Akazawa Housei 1
	15	Observation of Room-Temperature Oscillation in Si1-xGex/Si RTD	Tokyo Univ. of Agric. & Technol.1, Tokyo Metropolitan Univ.2　Yoshiyuki Suda1, Hirotaka Maekawa1, Takahumi Okubo1, Naoya Asaoka2, Michihiko Suhara2
	16	Improvement of the thermal stability of Si1-yCy films by using SiO2 cap layers	Tokyo Tech 1,QNERC 2　Ishihara Hanae 1,Inoue Komaki 1,Yamada Akira 2,Konagai Makoto 1
	17	A mechanism on the pair-generation of the basal-plane-dislocations in the crystal growth of SiC	SiXON Ltd. 1, Kyoto Institute of Technology 2, Widegap Materials Inc. 3　*Nishiguchi Taro 1, Furusho Tomoaki 1, Yu Nakamura 2, Nishio Koji 2, Isshiki Toshiyuki 2, Shiomi Hiromu 1, Nishino Shigehiro 3
13.6 Group-IV Compounds
September 4 9:30〜18:00
4a-T-　/ I
	1	Investigation of polytype control for the growth of 2H-SiC crystals using Li flux	Osaka Univ. 1, Hitachi Metals Ltd. 2　Takashi Ogura 1, Masahiro Uemura 1, Mamoru Imade 1, Fumio Kawamura 1, Masashi Yoshimura 1, Yasuo Kitaoka 1, Yusuke Mori 1, Takatomo Sasaki 1, Masanobu Yamazaki 2, Shigekazu Suwabe 2
	2	The TEM observation of 2H-SiC single crystals grown in Li flux	Hitachi-Metals,Ltd. 1,Graduate School of Engineering,Osaka Univ. 2　Yamazaki Masanobu 1,Suwabe Shigekazu 1,Ogura Takafumi 2,Uemura Masahiro 2,Imade Mamoru 2,Kawamura Fumio 2,Yoshimura Masashi 2,Kitaoka Yasuo 2,Mori Yusuke 2,Sasaki Takatomo 2
	3	Effect of Si-Ti solvent on growth rate improvement in SiC solution growth	Graduate School of Eng., Nagoya Univ. 1　*Ryo Tanaka 1, Ryosuke Maekawa 1, Toru Ujihara 1, Yoshikazu Takeda 1
	4	High Temperature Anneal Effect of 3C-SiC-OI Substrates	Air Water INC. 1,Osaka Prefecture University 2　*Asamura Hidetoshi 1,Oouchi Kazuhiro 1,Shinaji Takahiko 1,Yokoyama Takashi 1,Kobayashi Sumio 1,Izumi Katutoshi 2
	5	Growth of SiC on SOI substrate with ultra-thin top-Si layer using hot-mesh CVD.	Nagaoka Univ. of Tech. 1　*Miura Hitoshi 1, Abe Kazuki 1, Yasui Kanji 1, Nishiyama Hiroshi 1, Takata Masasuke 1, Inoue Yasunobu 1, Akahane Tadashi 1
	6	Thermal properties of 3C-SiC(111) film on Si(110) grown by organosilane	CIR, Tohoku Univ. 1　*Atsushi Konno 1, Maki Suemitsu 1
		Break 11:00〜11:15
△	7	Characterization of doping for 3C-SiC substrate with buried insulating layer	Kyushu Inst. technology 1　Takafumi Tanehira 1, Takahiro Nakano 1, Motoi Nakao 1
	8	Investigation of defects induced by polytype inclusions in sublimation bulk growth of 4H-SiC	SiXON Ltd.　*Kobayashi Ryohei 1, Yoshioka Yoshimitsu 1, Nishiguchi Taro 1, Furusho Tomoaki 1, Kinoshita Hiroyuki 1
	9	The evaluation of the structure of polytype transformation of SiC bulk crystal by TEM	Ion Eng. Res. Inst. 1, Kyoto Inst. of Tech.　*Aoki Masahiko 1, Miyazaki Megumi 1, Yoshimoto Masahiro 2
	10	Planarization of 4H-SiC (0001) 2 Inch Wafers by Catalyst Referred Etching	Osaka Univ. 1　*Okamoto Takeshi 1. Sano Yasuhisa 1. Hara Hideyuki 1. Arima Kenta 1. Yagi Keita 1. Murata Junji 1. Mimura Hidekazu 1. Yamauchi Kazuto 1
	11	Characterization of Electric Discharge Machining for SiC Single crystal	AIST/PERC 1, Chubu Univ. 2, THM 3, Suntechno Co.Ltd. 4, Nagoya Kou-San 5　*Tomohisa Kato 1, Toshiya Noro 2, Hideaki Takahashi 3, Takashi Majima 3, Yoshihisa Nagao 4, Katsuhiko Ishikawa 5, Satarou Yamaguchi 2
		Lunch 12:30〜13:30
4p-T-　/ I
	1	Beveling of Silicon Carbide Wafer by Plasma Chemical Vaporization Machining	Osaka Univ. 1　*Takehiro Kato 1,Yasuhisa Sano 1,Hideyuki Hara 1,Hidekazu Mimura 1,Kazuya Yamamura 1,Kazuto Yamauchi 1
△	2	Development of a High Rate 4H-SiC Epitaxial Growth Technique Achieving Large-Area Uniformity	CRIEPI 1　*Ito Masahiko 1, Storasta Liutauras 1, Tsuchida Hidekazu 1
	3	Origin of the giant step bunching on 4H-SiC (0001) surfaces	AIST 1, Saitama Univ. 2　*Ishida Yuuki 1, Takahashi Tetsuo 1, Okumura Hajime 1, Arai Kazuo 1, Yoshida Sadahumi 2
	4	Improvement of the doping uniformity on 4H-SiC C-face epitaxial wafer	AIST　1　*Kojima Kazutoshi 1, Okumura Hajime 1, Arai Kazuo 1
	5	Conversion and generation of threading screw dislocations in 4H-SiC{0001} epitaxial growth	CRIEPI 1　Hidekazu Tsuchida 1, Isaho Kamata 1, Masahiro Nagano 1
△	6	An Influence of Stacking Faults on Thermal Conductivity of SiC	Kyushu Univ.1, RIAM, Kyushu Univ.2　*Kawamura Takahiro1, Kangawa Yoshihiro2, Kakimoto Koichi2
▲	7	Simulation for growth rate and thermal stress of SiC crystal by sublimation method	RIAM, Kyushu Univ. 1, R & D Division, Furukawa Co., Ltd. 2　*Chen Xuejiang 1, Liu Lijun 1, Tezuka Hiroshige 2, Usuki Yoshiyuki 2, Kakimoto Koichi 1
	8	Analyses of etch pits for different polytypes SiC(0001) Si face by thermal etching	NAIST　Shimizu Tomoya, *Hatayama Tomoaki, Yano Hiroshi, Uraoka Yukiharu, Fuyuki Takashi
		Break 15:30〜15:45
	9	TEM observation of dislocations aligned along stacking faults in 4H-SiC crystal grown toward m-direction	Kyoto Inst. Tech. 1, Sixon Ltd. 2, Widegap Materials Inc. 3　Isshiki Toshiyuki 1, Nakamura Yu 1, Nishio Koji 1, Nishiguchi Taro 2, Furusho Tomoaki 2, Shiomi Hiroshi 2, Nishino Shigehiro 3
	10	Occurrence of dislocation in initial stage of SiC sublimation growth	SiXON Ltd.　*M,Sasaki, Y.Yoshioka, R.Kobayashi, T.Nishiguchi, H.Kinoshita
	11	Surface of 6H-SiC(1-100)substrates by high temperature gas etching	SiXON Ltd.　*Y.Yoshioka,T.Nishiguchi,M.Sasaki,K.Ikeda,H.Kinoshita
	12	Raman scattering study of stress distribution around dislocation in SiC	Kyoto Inst. Tech. 1, Wide Gap Materials Ltd. 2, Wakayama Univ. 3　*Matsuoka Daisuke 1, Yamamoto Hiroaki 1, Nishino Shigehiro 2, Hasuike Noriyuki 1, Kisoda Kenji 3, Harima Hiroshi 1
	13	Characterization of electrical properties of 4H-SiC with graded donor concentration	AIST 1　*Toshio Kitamura 1, Sin-ichi Nakashima 1, Tomohisa Kato 1, Kazutoshi Kojima 1 and Hajime Okumura 1
	14	Rapid Characterization of SiC Crystals by Full-Wafer Photoluminescence Imaging under Below-Gap Excitation	ISAS/JAXA 1, Tokyo Univ. 2　*Tajima Michio 1,2,Hoshino Norihiro 1,2,Isono Hideaki 1,2,Sugimoto Hiroki 1,2
	15	Temperature dependence of DAP emission properties in N-and-B doped 6H-SiC	Fac.Sci.and Technol Meijo Univ 1　*Murata Satoshi 1,Shibata Youko 1,Ikuta Mina 1,Sugiura Masaaki 1,Iwaya Motoaki 1,Kamiyama Satoshi 1,Amano Hiroshi 1,Akasaki Isamu 1
	16	Temperature dependence of electrical properties in Al-doped 4H-SiC epitaxial layers investigated by Hall-effect measurements	Kyoto Univ.　*Koizumi Atsushi 1, Suda Jun 1, Kimoto Tsunenobu 1
	17	Annealing effects on properties of N- and B-doped 6H-SiC	Fac.Sci.and Technol Meijo Univ 1, EL SEED Co. 2　*Shibata Youko 1, Murata Satoshi 1, Ikuta Mina 1, Sugiura Masaaki 1, Hayashi Keiji 1, Iwaya Motoaki 1, Kamiyama Satoshi 1,2, Amano Hiroshi 1, Akasaki Isamu 1, Nitta Syugo 2,
13.6 Group-IV Compounds
September 5 9:00〜12:00
5a-ZN-　/ I
	1	Changes of Hole concentration and Acceptor Density in Al-doped 6H-SiC by 1 MeV Electron Irradiation	Osaka Electro Communication Univ. 1, JAEA Takasaki 2　*Izawa Keisuke 1, Minohara Nobumasa 1, Sotodate Akira 1, Matsuura Hideharu 1, Ohshima Takeshi 2, Itoh Hisayoshi 2
△	2	Consideration of Origin of Deep Acceptor in Al-Doped 4H-SiC from Study of Irradiation of 200keV Electrons	Osaka Electro-Communication Univ. 1, JAERI 2　*Minohara Nobumasa 1, Inagawa Yuusuke 1, Takahashi Miyuki 1, Matsuura Hideharu 1, Ohshima Takeshi 2, Itoh Hisayoshi 2
	3	Positron annihilation measurements of SiC oxide layers irradiated with gamma-rays	AIST 1　*A.Kinomura, R.Suzuki, N.Ohshima, T.Ohdaira, S.Harada, M.Kato, Y.Tanaka, A.Kinoshita, K.Fukuda and N.Takada
▲△	4	Enhanced annealing of the lifetime limiting defects in thick 4H-SiC epilayers	CRIEPI 1　Liutauras Storasta 1, Tetsuya Miyazawa 1, Hidekazu Tsuchida 1
	5	Clarification of catalyst-assisted planarization mechanism of SiC surfaces by scanning probe techniques	Precision Science and Technology,Graduated School of Engineering,Oasaka Univ. 1　*Ryosuke Suga 1,Kenta Arima 1,Hideaki Hara 1,Keita Yagi 1,Jyunji Murata 1,Hidekazu Murata 1,Yasuhisa Sano 1,Kazuto Yamauti 1
	6	Propagation Analysis of Stacking Faults from 4H-SiC Bulk Substrate to Epitaxial Layer by Room-Temperature Photoluminescence Mapping	ISAS/JAXA 1, Tokyo Univ. 2, SiXON Ltd. 3　Norihiro Hoshino 1,2, Michio Tajima 1,2, Taro Nishiguchi 3, Keiichi Ikeda 3, Toshihiko Hayashi 3, Hiroyuki Kinoshita 3, Hiromu Shiomi 3
		Break 10:30〜10:45
	7	SiC Surface after Etched Using ClF3 Gas at High Temperatures	Yokohama Nat. Univ. 1, Kanto Denka Kogyo 2, AIST 3　Yusuke Katsumi 1, *Keiko Tanaka 1, Hitoshi Habuka 1, Yuan Gao 2, Katsuya Fukae 2, Tomohisa Kato 3, Hajime Okumura 3 and Kazuo Arai 3
	8	Kinetic of interface layer growth and Kirkendall void formation in Ni/SiC	Tohoku Univ. 1　Terui Kenichi 1, Atsuko Sekiguchi 1, Hiroshi Yoshizaki 1, Junichi Koike 1
	9	Interfacial reaction between Ni/Ti contact materials and n-type SiC	Tohoku Univ.　*Yoshizaki Hiroshi, Sekiguchi Atsuko, Miyazaki Takamichi, Koike Junichi
	10	High Temperature Highly Reliable Ohmic Contact for 4H-SiC Power Devices with Al Interconnects	Nissan Motor 1, FED 2, AIST 3　*Tanimoto Satoshi 1,2, Suzuki Tatsuhiro 1, Oohashi Hiromichi 3, Arai Kazuo 3
	11	Ohmic contact formation for high channel mobility in 4H-SiC MOSFET on carbon face	AIST　Shinsuke Harada, Makoto Kato, Tatsuo Yatsuo, Kenji Fukuda, Kazuo Arai
13.6 Group-IV Compounds
September 6 9:30〜17:00
6a-ZN-　/ I
	1	Evaluation of electrical properties in 3C-SiC(100) hot-implanted with P ions	I.B.Tech. Hosei Univ. 1　*Suzuki Yu 1, Satoh Masataka 1
	2	Evaluation of ohmic contact formed on P implanted 4H-SiC(0001) at room temperature	Hosei Univ. 1　Jinushi Takeshi 1,Kudo Takahiro 1,Nagata Shohei 1,Satoh Masataka 1
	3	Detection and Characterization of Extended Defects Induced by Ion Implantation/Annealing Process in SiC	CRIEPI 1, FED 2, AIST 3　Masahiro Nagano 1, Hidekazu Tsuchida 1, Takuma Suzuki 2, Tetsuo Hatakeyama 2, Kenji Fukuda 3
	4	Base concentration dependence of hfe in ion implanted 4H-SiC BJT	I.B.Tec. Hosei Univ. 1　*Satoshi Uchiumi 1, Taku Tajima 1, Tohru Nakamura 1, Masataka Satoh 1
	5	Emitter size effect on electrical properties in ion implanted 4H-SiC BJT	I.B.Tech. Hosei Univ. 1　Tajima Taku 1, Utiumi Satoshi 1, Tsukamoto Kenta 1, Satoh Masataka 1, Nakamura Tohru 1
▲	6	Study of defects in hydrogen implanted p-type SiC	Kyoto University 1　Alfieri Giovanni 1, Kimoto Tsunenobu 2
		Break 11:00〜11:15
	7	Charge Collection Efficiency for Electron Irradiated 6H-SiC PN Diodes	UEC 1, JAEA 2, Okayama Univ. 3　*Iwamoto Naoya 1,2, Onoda Shinobu 2, Hishiki Shigeomi 2, Ohshima Takeshi 2, Murakami Makoto 3, Nakano Itsuo 3, Kawano Katsuyasu 1
	8	Bevel Mesa Structure with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes	Kyoto Univ. 1, Hitachi Metals, Ltd. 2　Hiyoshi Toru 1, Hori Tsutomu 1,2, Suda Jun 1, Kimoto Tsunenobu 1
	9	Device simulation of optimum structure for implanted 4H-SiC bipolar junction transistor.	Hosei Univ. 1　*Tsukamoto Kenta 1,Uchiumi Satoshi 1,Tajima Taku 1,Misawa Tomonori 1,Nakamura Tohru 1,Sato Masataka 1
	10	Possibility of X-Ray Detector Using High-Purity Semi-Insulating 4H-SiC Operating at Room Temperature	Osaka Electro-Communication Univ. 1　*Takahashi Miyuki 1, Maeda Taketoshi 1, Yamamoto Kazuyo 1, Matsuura Hideharu 1
	11	Fabrication of SiC pH Sensor with Self-Assembled monolayers	Nagoya Inst. Tech. MTBA, E&CE　*Osamu Eryu1,Keiji Yamashita1,Hajime Kawasaki1,Masashi Hayashi2,Yayoi Tanaka1, Naotaka Ohyabu1
		Lunch 12:30〜13:30
6p-ZN-　/ I
	1	Young Scientist Award for the Presentation of an Excellent Paper Characterization of Stacking Faults in 4H-SiC Epitaxial Layer by Room-Temperature Photoluminescence Mapping	ISAS/JAXA 1, Tokyo Univ. 2, DENSO CORP. 3　*Norihiro Hoshino 1,2, Michio Tajima 1,2, Masami Naitoh 3, Eiichi Okuno 3, Shoichi Onda 3
	2	Characterization of SiO2/SiC interfaces using spectroscopic ellipsometer–Dependence on oxidation methods and surface orientation-	Saitama Univ. 1　*hashimto hideki 1,hijikata yasuto 1,yaguchi hiroyuki 1,yoshida sadafumi 1
	3	Oxygen-Partial-Pressure Dependence of SiC Oxidation Rate Studied by In situ Spectroscopic Ellipsometer	Saitama Univ. 1　*Yamamoto Takeshi 1, Hijikata yasuto 1, Yaguchi Hiroyuki 1, Yoshida Sadafumi 1
	4	Model Calculation of SiC Oxidation Rate in the Thin Oxide Regime	Saitama Univ.1　*Hijikata Yasuto1, Yamamoto Takeshi1, Yaguchi Hiroyuki1, Yoshida Sadafumi1
	5	Reliability of gate SiO2 formed by CVD	Mitsubishi Electric Corp. 1　Keiko Fujihira 1,Shohei Yoshida 1,Naruhisa Miura 1,Yukiyasu Nakao 1,Masayuki Imaizumi 1,Tatsuo Oomori 1
	6	Gate area dependence of SiC thermal oxide reliability	AIST　*Senzaki Junji 1, Shimozato Atsushi 1, Okamoto Mitsuo 1, Kojima Kazusato 1, Fukuda Kenji 1, Okumura Hajime 1, Arai Kazuo 1
△	7	Fabrication of SiC MISFETs with SiNx/SiO2 Gate Insulators Deposited by Plasma-Enhanced CVD	Kyoto Univ. 1　*Noborio Masato 1,Suda Jun 1,Kimoto Tsunenobu 1
		Break 15:15〜15:30
	8	Characterization of 4H-SiC MIS capacitor prepared by TEOS-CVD	Shinshu Univ.　*C. Chen, Y. Ishida, H. Shiozawa, A. Sengoku, T. Yamakami, R. Hayashibe, K. Abe, K. Kamimura
△	9	Improvements of channel mobility of Al2O3/SiC MOSFETs by introducing ultra thin SiOx layer (II)	Tokyo Tech. P&I Lab. 1,Mitsubishi Elec. Corp. 2　*Hino Shiro 1, Hatayama Tomohiro 1, Kato Jun 1, Moriya Hitoshi 1, Miura Naruhisa 2, Oomori Tatsuo 2, Tokumitsu Eisuke 1
	10	Effect of post-annealing on electrical properties of SiC MOSFETs with low-temperature-deposited Al2O3 gate insulator.	Tokyo Tech. P&I Lab. 1,Mitsubishi Elec. Corp. 2　J. Kato1, S. Hino1, N. Miura2, T. Oomori2 , E. Tokumitsu1
	11	Improvement of Electrical Properties at SiC-MOS Interface using AlON/SiO2/SiC Stacked Structures	Graduate School of Engineering, Osaka Univ.　Makoto Harada 1, Yuu Watanabe 1, Takuji Hosoi 1, Takayoshi Shimura 1, Heiji Watanabe 1
	12	Critical Pulse Fall Time for Measuring Accurate Charge Pumping Current in 4H-SiC MOSFETs	Nara Inst. Sci. Tech.　*Okamoto Dai, Yano Hiroshi, Hatayama Tomoaki, Uraoka Yukiharu, Fuyuki Takashi
	13	Relationship between Fabrication Processes and Electrical Characteristics of Gamma-ray Irradiated N-channel 6H-SiC MOSFETs	JAEA 1, UEC 2, AIST 3　*Shigeomi Hishiki 1, Naoya Iwamoto 1,2, Takeshi Ohshima 1, Itoh Hisayoshi 1, Kazutoshi Kojima 3, Katsuyasu Kawano 2
13.7 Epitaxial Growth Fundamentals
September 6 9:00〜12:15
6a-E-　/ I
	1	Theoretical investigation on wurtzite-zinc blende polytypism of GaAs layers at Au/GaAs(111) interfaces	Mie Univ. 1　*Yuya Haneda 1, Toru Akiyama 1, Kohji Nakamura 1, Tomonori Ito 1
	2	Theoretical investigation for the formation of rotational twins in group III-V semiconductor nanowires	Mie Univ. 1　*Tomoki Yamashita 1, Kosuke Sano 1, Toru Akiyama 1, Kohji Nakamura 1, Tomonori Ito 1
	3	An ab initio-based approach to phase diagram calculations for GaAs(001)-(2x4)γ surfaces	Mie Univ. 1　Ito Tomonori 1, Akiyama Toru 1, Nakamura Kohji 1
	4	Atomic structure of Sb-adsorbed GaAs(001)-(2x4) surface	NIMS　Akihiro Ohtake 1
	5	Study for the structure of Sb irradiated GaAs(001) substrate	Tottori Univ 1　*Ishii Akira 1, Ohno Hitoshi 1, Oda Yasuhiro 1, Sekino Masashi 1
	6	Change of InAs quantum-dot structures during Sb-mediated MBE growth	Univ. of Electro-Communications 1　*Kakuda Naoki 1, Yamaguchi Koichi 1
		Break 10:30〜10:45
	7	In-situ observation of H-terminated Si(111) interface during initial Sr film growth process	JAEA 1,Eiko 2,AIST-ETRI 3　*Yamazaki Tatsuya 1,2,Asaoka Hidehito 1,Taguchi Tomitsugu 1,Shamoto Shinichi 1,Toyoshima Yasutake 3
	8	Theoretical study of structural stability of 3C-SiC(111)/Si(110)	Mie Univ. 1, CIR, Tohoku Univ. 2　*T Kanno 1, T Ito 1, T Akiyama 1, K Nakamura 1, A Konno 2, M Suemitsu 2
	9	Theoretical investigation on structural stability of InN film on 3C-SiC(001)	Mie Univ.1　*Takumi Ito 1,Toru Akiyama 1,Kohji Nakamura 1,Tomonori Ito 1
	10	Theoretical study of miscibility for GaNxAs1-x on V-grooved substrate	Mie Univ. 1　*Takasu Naoki 1, Akiyama Toru 1, Nakamura Kohji 1, Ito Tomonori 1
	11	Influence of the Surface tension of SiO2 Mask on“lift up” phenomenon of GaAs microchannel epitaxy	Dept. of Materials Science & Engineering, Meijo Univ.　*Yamamoto Akio 1, Imai Takumi 1, Ito Kouzi 1, Kanbayashi Daisuke 1, Narituka Shigeya 1, Maruyama Takahiro 1
	12	Whole area growth of flat AlGaAs layer by combination of adjacent microchannel epitaxial layers	Dept. of Materials Science & Engineering, Meijo Univ.1　*Hattori Atsushi 1,Tsuge Kei 1,Narituka Shigeya 1,Maruyama Takahiro 1
13.8 Nano-impurities and defects
September 4 13:00〜17:45
4p-A-　/ I
	1	Anomalous diffusivity of oxygen in heavily boron-doped CZ silicon crystals	SUMCO TECHXIV Co.　Kozo Nakamura, Seiich Shimura, Susumu Maeda
△	2	Quantitative Photoluminescence Analysis of Impurities in Silicon: Extension to Higher Concentration Range	Tokyo Univ.1, ISAS/JAXA2, Soken Univ.3　*Ogihara Takashi 1,2, Nakagawa Satoko2,3, Tajima Michio1,2
	3	Ab initio analysis of point defects in plane-stressed Si or Ge single crystal	Okayama Pref. Univ. 1, Warsaw Univ. of Technology 2, Ghent Univ. 3　*Sueoka Koji 1, Śpiewak Piotr 2, Vanhellemont Jan 3
△	4	Evaluation of Vacancy concentration in CZ-Si Crystal using Ultrasonic Measurements	Graduate School of Science and Technology, Niigata Univ. 1, Research Center for Quantum Materials Science, Niigata Univ. 2, Inst. for Materials Research, Tohoku Univ. 3　*Masatoshi Hikin 1, Terutaka Goto 1, Hiroshi Yamada-Kaneta 2, Yuichi Nemoto 1, Hajime Watanabe 1, Tatsuya Yanagisawa 2, Shintaro Nakamura 3
	5	Formation of point defects during surface oxidation of silicon crystals	Tohoku Univ., I.M.R. 1, Tohoku Univ., C.I.R. 2　Suezawa Masashi 1, Suemitsu Maki 2, Yonenaga Ichiro 1, Usami Noritaka 1
	6	Thermal stability of resistivity-reduced region formed around SiGe/Si interface by hydrogen treatment	Okayama Univ.　*Yoshifumi Yamashita 1, Kaishi Sugiura 1, Takashi Kobayashi 1, Takeshi Ishiyama 1, Yoichi Kamiura 1
	7	The stress effects on IR absorption lines due to platinum-hydrogen defects in Si observed by stress IR technique	Okayama Univ. 1,　*Kimihiro Sato 1, Youichi Kamiura 1, Yoshihumi Yamashita 1, Takeshi Ishiyama 1,
	8	DLTS study of AlGaInP LED with current confinement structure made by proton implantation	Aichi Institute of Technology 1　Matsuoka Yoichi 1,Akiyama Kazuki 1,*Tokuda Yutaka 1
	9	Generalization of Analysis Method for Simply Identifying Peak Broadening Factors through hkl-dependence Analysis(2): twist distribution case	NTT PH Labs 1, Tohoku Univ. 2, JST-CREST 3 　Nakashima Kiichi 1, Matsuoka Takashi 2,3
		Break 15:15〜15:30
	10	Diffusion-temperature dependence of Cu center concentration in Cu-saturated Si crystal	Hitachi, Ltd., Hitachi Res. Lab. 1, Renesas Technol., Wafer Process 2　*Nakamura Minoru 1, Murakami Susumu 1, Kawai Naoyuki 2, Saito Shigeaki 2, Arie Hiroyuki 2
	11	Stable sites of copper impurity and its electronic state in silicon	ISIR, Osaka Univ. 1, Nanotechnology center, ISIR, 2　*Hironobu Yamaguchi 1, Koun Shirai 2, Hiroshi Katayama-Yoshida 1,2
	12	Improvement of the gettering efficiency of Cu by BO complexes	Osaka University, ISIR 1、Renesas Technology Corp 2　* Koun Shirai 1,Kazuhito Matsukawa 2, Nobuhiro Yamaguchi 1, Hiroshi Katayama-Yoshida 1
	13	Distribution of Iron impurities in mc-Si observed by "Mossbauer spectroscopic microscope"	Shizuoka Inst of Science and Technology　*Kazumasa Sakata 1,Kunifumi Suzuki 1,Kazuo Hayakawa 1,Kenichi Yukihira 1,Yutaka Yoshida 1
	14	Infrared absorption of N-related complexes in irradiated Si crystal	Osaka Pref. Univ 1, Kumamoto N. College Technol. 2, Toyota Motor Co. 3, Toyota R&D Labs. 4　*Inoue Naohisa 1, Oyama Hidenori 2, Goto Yasunori 3, Kushida Tomoyoshi 3, Sugiyama Takahide 4
	15	Infrared absorption of Si Nanowires by BL43IR beam line of SPring-8	NIMS 1, Inst. of Appl. Phys. Univ. of Tsukuba 2, JASRI 3　*N. Fukata 1, J. Chen 1, T. Sekiguchi 1, K. Murakami 2,Y. Ikemoto 3, T. Moriwaki 3
	16	Control of migration of impurities by IR excitation	Osaka Univ., ISIR, Nanotechnology Center　*Koun Shirai,Nobuhiro Yamaguchi, Hiroshi Katayama-Yoshida
	17	First-Principles study of electronic structure of silicon with a trimer dopant	Kwansei Gakuin Univ. 1　*Igei Kazuyuki 1,Higashiguchi Yoshitsune 1,Atoro Eisaku 1,Hayafuji Yoshinori 1
	18	Ab initio calculations of dopant energy levels in 4H-SiC	Kwansei Gakuin Univ. 1　*Miyata Masanori 1,Igei Kazuyuki 1,Higashiguchi Yoshitsune 1,Hayafuji Yoshinori 1