12 Semiconductors B (Exploratory Materials / Physics / Devices
12.1 Exploratory Materials Physics
September 4 9:00〜17:00
4a-Q-　/ III
	1	Growth of Tungsten Oxide Whisker and its Characterization (2).	Tokai Univ　*Ryohei Miyazaki, Toshihiro Iida, Masahiro Kato, Yoichi Hirose
	2	Dependence of Hydrogen Storage on Pore Structure in Nano Porous Silicon	Tokyo Denki Univ. 1　*Mori Hikaru 1,Motohashi Mituya 1,Homma Kazuaki 1
	3	Electronic Structure of Rare Earth Oxypnictides	College of Science and Technology, Nihon University1, Hiroshima Synchrotron Radiation Center2, Graduate School of Science, Hiroshima University3　K. Takase1, H. Sato2, Y. Takahashi1, S. Komatsuzaki1, T. Watanabe1, Y. Takano1, M. Nakatake2, H. Namatame2, M. Taniguchi2,3
△	4	Synthesize of LaOCuS thin film by Pulsed laser deposition using amorphous target	Nihon Univ 1　Kurumi Satoshi 1 , Takase Kouichi , Suzuki Kaoru
	5	Synthesis and carrier transport properties of Srn+1(Ti1-xMnx)nO3n+1(n=∞,1)(x=0-1) with perovskite related structures	Kyushu Inst. Tech. 1　*Fujisawa Masaru 1,Ueda Kazushige 1
	6	Elucidation of Photoluminescence Enhancement in Zr4+-Doped YPO4:Mn2+	Fukui Univ. 1,Fukui National College of Technology 2　*Inada Yohei 1,Kitaura Mamoru 2,Fukui Kazutoshi 1
		Break 10:30〜10:45
	7	Band edge emission from the ordered AlAs-like LiMgAs	Hosei Univ. 1, Kyoiku Univ. 2　*Yamashita Yoshihiro 1, Suzuki Yuuhei 1, Matsumoto Kouji 1, Kuriyama Kazuo 1, Kushida Kazumasa 2
	8	Development of a new organic ruthenium precursor	Air Liquide Laboratories　*Gatineau Julien, Dussarrat Christian
	9	Single crystal growth of layered oxychalcogenides LaCuOCh(Ch=S, Se) by flux method	Kyushu Inst. Tech. 1　*Nakachi Yutaka 1,Ueda Kazushige 1
	10	Crystal structure and electronic state of Zn3V2O7(OH)2・2H2O	Keio Univ. 1　Kamio Tsubasa , Matoba Masanori 1
	11	Observation of near-field energy transfer among ZnO quantum dots	The University of Tokyo 1, SORST JST 2　*Jeong Hyungsu 1, Yatsui Takashi 2, Ohtsu Motoichi 1,2
		Lunch 12:00〜13:00
4p-Q-　/ III
	1	Improvement of the device performance of normally off mode AlGaN/GaN junction HFETs with p-type GaN gate	Meijo Univ., 1　*Mizuno Katsutoshi 1,Fujii Takahiro 1,Nakamura Syogo 1,Nega Ryohei 1,Iwaya Motoaki 1,Kamiyama Satoshi 1,Amano Hiroshi 1,Akasaki Isamu 1
	2	High efficient gate for ultra-thin graphite FET by an Al electrode	RIKEN 1, Tokyo Inst. of Tech. 2, Univ. of Tsukuba 3, CREST(JST) 4　*Hisao Miyazaki 1,4, Shunsuke Odaka 1,2, Takashi Sato 3, Akinobu Kanda 3,4, Kazuhito Tsukagoshi 1,4, Youiti Ootuka 3, Yoshinobu Aoyagi 1,2,4
▲	3	DC Characteristics of n-channel GaAs MESFET at Cryogenic Temperature (II)	AIST 1　*Chen Yigang 1, Itatani Taro 1, Ohkubo Masataka 1
	4	Electrical transpot properties of ultra thin carbon layers grown on SiC (3)	RCIQE Hokkaido Univ. 1, Columbia Univ. 2, CREST-JST 3　*Ishizaki Tsubasa 1, Matsuda Takashi 1, Konishi Keita 1, Valla Fatemi 2, Yoh Kanji 1,3
△	5	Spin-injection propertied from ferromagnetic metal electrodes to nanographite film	RCIQE Hokkaido Univ. 1,CREST-JST 2　*Keita Konishi 1,Tsubasa Ishizaki 1,Kanji Yoh 1,2
	6	Structure appraisal of C60nanowhiskers by Raman scattering spectra	International Graduate School of Arts and Sci. Yokohama City Univ. 1, NIMS 2　*Watanabe Mami 1,Miyazawa Kun'ichi 2,Kojima kenichi 1,Tachibana Masaru 1
	7	Effect of substrate on (111) orientated growth of [CoPt/MgO]n structure	Kyushu Univ. 1　*Matsumoto Tatsuya 1, Kurosawa Masashi 1, Ueda Kouji 1, Sadoh Taizoh 1, Miyao Masanobu 1
	8	Crystallization of MgO thin films on Si(100) Substrate	Kyushu Univ. 1　*Kurosawa Masashi 1, Matsumoto Tatsuya 1, Ueda Koji 1, Kenjo Atsushi 1, Sadoh Taizoh 1, Miyao Masanobu 1
		Break 15:00〜15:15
	9	Neutron Transmutation Doping of 30Si enriched thin film	JAEA1, WERC2, Ibaraki Univ.3　*Y. Yamada 1, H. Yamamoto 1, H. Ohba 1, M. Sasase 2, F. Esaka 1, H. Udono 2, K. Yamaguchi 1, A. Yokoyama 1, K. Hojou 1, S. Shamoto 1
△	10	Epitaxial growth and electrical characterization of impurity-doped BaSi2 films on Si(111) grown by molecular beam epitaxy	Inst. of Appl. Phys. Univ. of Tsukuba　1, JST- PRESTO 2, Wakasa Wan Energy Research Center 3　*Kobayashi Michitaka 1, Ichikawa Yoshitake 1, Suemasu Takashi 1,2, Sasase Masato 3
△	11	Molecular Beam Epitaxy of BaSi2/CoSi2/Si Structure for Si-based Schottky Barrier Solar Cells.	Inst.of Appl.Phys.,Univ.of Tsukuba.1,JST-PRESTO.2,WERC.3　Ichikawa Yoshitake,Kobayshi Michitaka,Suemasu Takashi,Sasase Masato
	12	Preparation of sintered Ma2Si using reuse Si and characterization of its thermoelectric properties	Tokyo University of Science 1, JSPS Research Fellow 2, 　*M.Akasaka 1 2, T.Omori1, Y.Oguni 1, T.Iida 1, Y.Takanashi 1
	13	Melt growth and characterization Ag-doped Mg2Si crystals	Ibaraki Univ. 1　*Sugimoto Kazuhiro 1,Tamura Daiki 1,Udono Haruhiko 1
	14	Structure analysis of ErSi2 nanowires formed on Si (100)substrates	Tokyo Univ.of Science 1,RIKEN 2　*Katayama Yusuke 1,Yokoyama Satoshi 1,Kobayashi Tomohiro 2,Meguro Takashi 2,Zhao Xinwei 1
	15	Resistivity measurements of ErSi2 nanowires formed on Si substrates	Tokyo Univ. of Science 1,RIKEN 2　*Yokoyama Satoshi 1,Katayama Yusuke 1,Kobayashi Tomohiro 2,Meguro Takashi 2,Zhao Xinwei 1
12.1 Exploratory Materials Physics
September 5 9:00〜17:45
5a-Q-　/ III
	1	Epitaxial Growth of β-FeSi2 Thin Film on SiC	Kanagawa Ind. Tech. Cent. 1　Akiyama Kensuke 1, Kaneko Satoru 1, Kadowaki Teiko 1, Hirabayashi Yasuo 1
	2	Homoepitaxy of β-FeSi2 thin films on various oriented substrates by MBE	Ibaraki Univ. 1,JAEA 2　*Ohuchi Shinji 1,Wakaya Ippei 1,Udono Haruhiko 1,Yamada Youichi 2,Yamamoto Hiroyuki 2,Esaka Humitaka 2
	3	Effect of Al Doping on β-FeSi2/Si(111) Epitaxial Growth by Reactive Deposition Epitaxy	Osaka University　*Syoutaro Hashimoto, Yoshikazu Terai, Atsushi Kakiuchi and Yasufumi Fujiwara
▲	4	Influence of Residual Gases on β-FeSi2 Layers on Si(001) Substrates by an Iron Vacuum Deposition Method	O.E.Device System R&D Center,Kanazawa Inst. Tech.　*Makoto Ishii, Toshihiro Miyata, Tadatsugu Minami
	5	Characterization of β-FeSi2/Si hetero-diodes prepared with laser-ablated Fe films.	School of Sci. and Tech. MEIJI Univ.　○Fukuda Tomohiro 1, Mimura Tomohiro 1, Miura Noboru 1, Matsumoto Hironaga 1, Uekusa Shinitirou 1, Nakano Ryoutarou 1
	6	Growth and luminescence characterization of Si/\beta-FeSi2/Si(111) double-heterostructures by MBE on n+-epi-FZ-Si(111) substrate.	Inst. of Appl. Phys., Univ. of Tsukuba　1　Suzuno Mitsushi 1,Ugajin Yuta 1,Murase Shigemitsu 1,Semasu Takashi 1
		Break 10:30〜10:45
	7	Growth and luminescence characterization of Si/β-FeSi2 film /n+-Si(001) structure using a heavily Ga doped p+-Si layer	Inst. of Appl. Phys., Univ. Tsukuba　*Murase Shigemitsu 1,Koizumi Tomoaki 1,Suemasu Takashi 1
△	8	Simulation of light propagation on silicide photonic crystals with conjugated inversion lattices	Kyoto Univ. 1, Osaka Univ. 2, Kanagawa Indust. Tech. Center 3　*Kunimatsu Shunsuke 1, Terai Yoshikazu 2, Akiyama Kensuke 3, Maeda Yoshihito 1
	9	Near-infrared photoluminescence from mixed crystals of b-FeSi2 - Si	Ibaraki NCT 1　*Hara Yoshiaki 1, Akutsu Keiichi 1, Nakaoka Kanichirou 1
	10	Energetic Evaluation of the Semiconducting Silicides of the 8th Group Elements (Fe, Ru, and Os)	Natl. Inst. Adv. Ind. Sci. Technol. 　Imai Yoji 1, Watanabe Akio 1
	11	Electronic and structural analyses of -FeSi2 under high pressure conditions (II): Si-Si bond expansion under high pressure.	NIMS 1, Keio Univ. 2, Okayama Univ. of Sci. 3　*Ishii Masashi 1, Komukai Yasuo 2, Mori Yoshihisa 3, Takarabe Kenichi 3, Sakurai Kenji 1
		Lunch 12:00〜13:00
5p-Q-　/ III
	1	Young Scientist Award for the Presentation of an Excellent Paper Atomically Controlled MBE of Ferromagnetic Silicide Fe3Si/Ge Hetero structure	Kyushu Univ. 1, JAEA 2, Kyoto Univ. 3　*Ueda Koji 1, Kumano Mamoru 1, Ando Yuichiro 1, Sadoh Taizoh 1, Narumi Kazumasa 2, Maeda Yoshihito 2,3, Miyao Masanobu 1
△	2	Effect of growth temperature on Fe3Si/Ge heteroepitaxy	Kyushu Univ. 1, Kyoto Univ.2, JAEA3　*Yuichiro Ando1, Takafumi Jonishi2, Kazumasa Narumi3, Mamoru Kumano1, Koji Ueda1, Taizoh Sadoh1, Yoshihito Maeda2,3, Masanobu Miyao1,
	3	Evaluation of axial orientation in epitaxial growth of Fe3Si on Ge(111) by TEM-ED	Kyoto Univ. 1, Kyushu Univ. 2　Hiraiwa Yusuke 1, Jonishi Takafumi 1, Ando Yu-ichiro 2, Kumano Mamoru 2, Ueda Koji 2, Sadoh Taizoh 2, Miyao Masanobu 2, Maeda Yoshihito 1
	4	Interdiffusion at Fe3Si/Ge interfaces and its effect on axial orientation	Kyushu Univ. 1, Kyoto Univ. 2, JAEA 3　*T. Jonishi1, Y. Ando2, Y. Hiraiwa1, K. Narumi3, M. Kumano2, K. Ueda2, T. Sadoh2, M. Miyao2, Y. Maeda1,3
	5	Formation of [Fe3Si/Ge]2 multilayered structure by MBE	Kyushu Univ. 1, Kyoto Univ. 2　*Mamoru Kumano 1, Yuichiro Ando 1, Koji Ueda 1, Atsushi Kenjo 1, Taizoh Sadoh 1, Yoshihito Maeda 2, Masanobu Miyao 1
	6	Formation and Characterization of Fe3Si/Si Schottky Barrier	Dept.Electronics,Kyushu Univ. 1　*Yuji Kishi 1,Mamoru Kumano 1,Koji Ueda 1,Taizoh Sadoh 1,Masanobu Miyao 1
△	7	Epitaxial growth and magnetic characterization of Fe3Si/CaF2/Fe3Si magnetic tunnel junction structures on Si(111)	univ. of Tsukuba Inst. of Appl. Phys. 1, NRI-AIST　*Harianto Teddy 1, Suemasu Takashi 1, Akinaga Hiroyuki 2
	8	Formation of ultrahigh density epitaxial Fe3Si nanodots on Si(111) substrates covered with ultrathin SiO2 films	The University of Tokyo 1, CREST-JST 2　*Fukuda Kenjiro 1, Nakamura Yoshiaki 1,2, Amari Shogo 1, Ichikawa Masakazu 1,2
		Break 15:00〜15:15
	9	Nano-stracture-FeSi2/Si composite film fabricated by Scanning Annealing	RCCRE Tokyo Tech. 1,CAMA Tokyo Tech. 2　*Terasawa Shinsuke 1, Inoue Takeru 1, Genseki Akira 2, Ihara Manabu 1
	10	Fabrication of FeSi2 film by using thin film zone melting crystallization and control of the crystal phase	RCCRE Tokyo Tech. 1　*Inoue Takeru 1,Terasawa Shinsuke 1,Ihara Manabu 1
△	11	Preparation of β-FeSi2 nanoparticles by the ball-milling method	Waseda Univ.,Lab.for.Mat.Sci.&Tech 1,　*Uemura Ryo 1, Kunimoto Kentaro 1, Hamaguchi Sayako 1, Kobayashi Masakazu 1,
△	12	Fabrication of B-FeSi2 using ion-implantation into silicon-on-insulator substrate	Kyushu Inst. Tech.　*Takahiro Nakano 1, Takafumi Tanehira 1, Motoi Nakao 1
△	13	Preparation and evaluation of β-FeSi2 layer grown by molten salt method	Waseda Univ. 1,Tohoku Univ. 2　*Hanada Toru 1,Ueno Kousuke 1,Nakao Masasi 2,Miyazawa Shintarou 1,Nakae Hideo 1
	14	Solution growth of ß-FeSi2 single crystal using a high purity FeSi2 source (III)	Ibaraki Univ. 1　*Gotoh Kouhei 1,Udono Haruhiko 1,Mashiko Shinsuke 1
	15	Preparation and characterization of clean surface ofβ-FeSi2 single crystal	JAEA 1, Ibaraki Univ. 2　*Yamada Yamada 1,Ippei Wakatani 2,Shinji Ohuchi 2,Hiroyuki Yamamoto 1, Haruhiko Udono 2
	16	Transmission electron microscopy study on the formation process of β-FeSi2 nanoparticles	The Institute of Scientific and Industrial Research, Osaka Univ.　*Jonghan Won, Andras Kovacs, Manabu Ishimaru and Yoshihiko Hirotsu
	17	Aligned defects structure of IBSD-β-FeSi2 thin films in (100) silicon	The Wakasa-wan Energy Research Center 1Japan Atomic Energy Agency 2　*Sasase Masato 1, Yamamoto Hiroyuki 2, Yamaguchi Kenji 2, Shamoto Shin-ichi 2, Hojou Kiichi 2
△	18	Structure analysis of Fe-Si metastable phase formed in Fe ion implanted Si	Osaka Univ.　*Naito Muneyuki 1, Ishimaru Manabu 1, Hirotsu Yoshihiko 1
12.2 Heterostructures and Quantum Nanostructures
September 5
5a-N-　/ III
		Short Presentation (5min.) 9:45〜12:00 6a-N-1〜24　Poster Session 15:30〜17:30
	1	Electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes	IIS/CINQIE, Univ. of Tokyo 1, Dept. of Applied Phys/CINQIE, Univ. of Tokyo 2, ICORP JST 3 　*Shibata Kenji 1, Buizert Christo 2, Oiwa Akira 2, Hirakawa Kazuhiko 1, Tarucha Seigo 2,3
	2	Spin relaxation in spin-blockade measurements with stacked quantum dots embedded in HEMT structure	Hokkaido Univ. 1, CREST-JST　*Kashiwada Saori 1, Yoh Kanji 1,2
	3	Electron transport properties in T-shape three-terminal structures with InAs/AlGaSb quantum wires	Osaka Inst. Tech. 1　*Masatoshi Koyama 1, Atsushi Nakashima 1, Tatsuya Inoue 1, Naoki Amano 1, Toshihiko Maemoto 1, Shigehiko Sasa 1, Masataka Inoue 1
	4	Magneto-capacitance study of an n-AlGaAs/GaAs heterojunction supporting a sizable dc current	NIMS 1, IIS, Univ. of Tokyo 2, Toyota Tech. Inst. 3　*Takuya Kawazu1,2,Hiroyuki Sakaki1,2,3
	5	Reduction of Leakage Current using Nano-area Local Epitaxy for CdF2/CaF2 Intersubband Transition Lasers on Si substrate	Tokyo Institute of Technology. 1,CREST-JST 2　Fujihisa Yuki 1. Kumei Masaya 1. Syunsuke Kajiura 1. Yusuke Sasaki 1. Masahiro Watanabe 1. Masahiro Asada 1.2
	6	Observation Possibility of Electron Wave Diffraction Using BEEM Technique	Tokyo Tech 1,CREST-JST 2　*So Nishimura 1, Takeshi Arai 1, Yasuyuki Miyamoto 12, Kazuhito Furuya 12
	7	Study of post annealing of fluoride resonant tunneling diodes	Tokyo Tech. 1　*Watanabe Takahito 1,Watanabe So 1,Oshita Takao 1,Tsutsui Kazuo 1
	8	A study on unstable current variation in the fluoride resonant tunneling diodes	Tokyo Tech Univ.　*Ohkawa Takashi,Takahito Watanabe,Takao Ohsita,Kazuo Tsutsui
	9	Study of CaxSr1-xF2 barrier layers for fluoride resonant tunneling devices on Si substrates	Tokyo Tech　Oshita Takao, Tsutsui Kazuo
	10	Electron transport in coupled Si nanocrystals prepared by pulsed laser ablation	Dept.of Physics. Konan Univ. 1,Kansai Univ. 2,Quantum Nano Tech.Lab.Konan Univ. 3　*M Gibo 1,M Inada 2,I Umezu 1,3,T Saitoh 2,A Sugimura 1,3
	11	Fabrication of Sub-Micron GaAs/AlAs Double-Barrier Resonant Tunneling Diodes by Wet Etching with In Droplets as a Mask	National Institute for Materials Science　* Noda Takeshi 1, Mitsuishi Kazutaka 1, Mano Takaaki 1
	12	MBE growth of one-dimensionally ordered InAlAs quantum dots on a patterned substrate	Graduate School of Engineering, Nagoya Univ. 1　*T. Nishiwaki 1, M. Yamaguchi 1, N. Sawaki 1
	13	Formation mechanism of position-controlled aluminum nanodots by anodization processes	Laboratory Nanoelectronics and Spintronics, RIEC, Tohoku University 1, JST-CREST 2　*Yasuo Kimura 1,2, Takami Muto 1, Ryotaro. Yamaguchi 1, Ken-ichi Ishibashi 1, Kingo. Itaya 2, and Michio. Niwano 1,2
▲	14	Piezo-actuation and piezo-detection in a electromechanical resonator incorporating a 2DES	*NTT BRL 1, NTT AT 2　*Imran Mahboob 1, Sen Miyashiya 2, Hiroshi Yamaguchi 1
	15	Fabrication and Estimation of GaAs Cantilever for use in Magnetic Force Microscopy	CNMT, JAIST　Takashi Ohnishi, Hyonkwan Choi, *Syoji Yamada
	16	Fabrication of 3D micro/nano-structures based on MBE grown strained semiconductor multi-layers	Center for Nano-Materials and Technology, JAIST　Iwase Hiuma 1, Akabori Masashi 1, Suzuki Toshi-kazu 1, Yamada Syoji 1
	17	Photoluminescence property of annealed InAs quantum dots capped by InGaAs layers	Doshisya Univ. 1, ATR Wave Engineering Labs. 2　*Hiratsuka Shingo 1, Saravanan Shanmugam 2, Harayama Takahisa 2, Ohtani naoki 1
	18	Annealing effect on spectral linewidth of hexagonal gallium nitride quantum dots	RCAST 1, IIS 2, INQIE 3, Univ. of Tokyo　*Kawano Takeshi 1,3, Kako Satoshi 3, Christian Kindel 1,3, Arakawa Yasuhiko 1,2,3
	19	Control of Pt Nanodot Density by Remote Hydrogen Plasma	Hiroshima Univ.ADSM 1, 　*Shimanoe Kazuhiro 1, Makihara Katunori 1, Ikeda Mituhisa 1, Higashi Seiichirou 1, Miyazaki Seiichi 1
	20	Luminescence spectroscopy on near surface InAs quantum dots	Toyota Technological Institute　Kosei Fukui 1, Yuichiro Kawamura 1, Itaru Kamiya 1
12.2 Heterostructures and Quantum Nanostructures
September 6
6a-N-　/ III
		Short Presentation (5min.) 9:45〜12:00 6a-N-1〜24　Poster Session 15:30〜17:30
△	1	Exciton Dephasing Process Showing Non-exponential Decays in Single InP Quantum Dots	Inst. of Phys., Univ. of Tsukuba 1　Bando Kazuki 1, Masumoto Yasuaki 1
△	2	Spin relaxation of Second excited state of Highly Uniform InAs/GaAs Quantum Dots	Waseda Univ. 1, Univ. of Electro-Comm. 2　*Umi Takehiko 1, Tsukiji Nobukazu 2, Kusunoki Koji 1, Yamaguchi koichi 2, Tackeuchi Atsushi 1
	3	Photon life time of quantum dots with high and low density	AIST 1　*Takeru Amano 1, Shohgo Yamauchi 1, Takeyoshi Sugaya 1, Kazuhiro Komori 1
	4	Optical control of 2qubits quantum-logic-gate using exciton-molecule in a coupled quantum dot	AIST. 1 JST. 2 　*Goshima Keishiro 1. Komori Kazuhiro 2
	5	Rabi oscillation of excitons in InAs/GaAs single quantum dots	Nano Electronics Res. Labs. 1, Device Platform Res. Labs. 2, NEC Corp., INQIE 3, Univ. of Tokyo, JST-SORST 4　*Shunsuke Kono 1 3, Akihisa Tomita 1 4, Junichi Fujikata 1, Hideaki Saito 2, Kenichi Nishi 1
△	6	Photocurrent spectroscopy of single quantum dot at telecommunication wavelength of 1.3\mu m for coherent control	INQIE, RCAST, IIS Univ. of Tokyo 1　*Hiroyuki Takagi 1, Toshihiro Nakaoka 1, Katsuyuki Watanabe 1, Naoto Kumagai 1, Satoshi Iwamoto 1, Yasuhiko Arakawa 1
△	7	Exciting energy dependence of circular-polarized single photon from a single quantum dot	RIES 1, Hokkaido Univ. 2, JST CREST 3　*Kobayashi Hajime 1, Kumano Hidekazu 1, Suemune Ikuo 1,3, Sasakura Hirotaka 3, Adachi Satoru 2,3, Muto Syun'ichi 2,3
	8	Selective Excitation of 1.55-$\mu$m Single-Photon Generator with Horn Structure	Fujitsu Labs. Ltd. 1, NIMS 2, University of Tokyo IIS 3, RCAST 4, CINQIE 5　Kazuya Takemoto 1, Shinichi Hirose 1, Motomu Takatsu 1, Naoki Yokoyama 1, Yoshiki Sakuma 2, Tatsuya Usuki 3, Toshiyuki Miyazawa 3, Yasuhiko Arakawa3,4,5
	9	1.55 Micro Meter Band Single Photon Generation from Electrical-driven InAs Quantum Dot Device	INQIE Univ. of Tokyo 1, Fujitsu Labs. 2, RCAST Univ. of Tokyo 3, IIS Univ. of Tokyo 4　Toshiyuki Miyazawa1, Shinnichi Hirose2, Kazuya Takemoto2, Shigekazu Okumura2, Motomu Takatsu2, Tatsuya Usuki1, Naoki Yokoyama2, Yasuhiko Arakawa1,3,4
	10	Magneto-optical spectroscopy of charge-tunable InAs quantum dots	NEC corp. 1, AIST 2, JST-SORST 3　*Kirihara Akihiro 1, Kono Shunsuke 1, Fujikata Junichi 1, Ohkouchi Shunsuke 1,2, Tomita Akihisa 1,3, Yorozu Shinichi 1
	11	Polarization-resolved photoluminescence in charge tunable GaAs quantum dots	NTT-BRL 1　*Haruki Sanada 1, Tetsuomi Sogawa 1, Hideki Gotoh 1, Hidehiko Kamada 1, Hiroshi Yamaguchi 1, and Hidetoshi Nakano 1
	12	Optical anisotropy of InAs quantum dots on an InP(113)B substrate	Univ. of Tokushima 1. NICT 2　*Mukai Takuya 1. Morita Ken 1. Kitada Takahiro 1. Isu Toshiro 1.2.Akahane Koichi 2. Yamamoto Naokatsu 2
		Break 10:45〜11:00
△	13	Bistable behavior of nuclear spin polarization in a single self-assembled InAlAs quantum dot	Hokkaido Univ. 1, RIES 2, JST CREST 3　Kaji Reina 1, Sasakura Hirotaka 3, Adachi Satoru 1,3, Muto Shunichi 1,3, Suemune Ikuo 2,3
	14	Formation time of nuclear field in single self-assembled InAlAs quantum dots	Hokkaido Univ. 1 RIES 2 JST CREST 3　H. Sasakura 3 S. Adachi 1,3 R. Kaji 1 S. Muto 1,3 I. Suemune 2,3
	15	Near-field Spectroscopy of InAs/InP Single Quantum Dots emitting at　1.55μm	Keio univ. 1,NIMS 2,Fujitsu Lab. 3　 *Nakashima Koji 1,Kubota Ryousuke 1,Mizuno Dai 1,Saiki Toshiharu 1,Sakuma Yoshiki 2,Usuki Tatsuya 3
	16	micro-Photoluminescence and Single Photon Emission from a Single Isoelectronic Trap in Nitrogen delta-doped GaP	Tsukuba Univ. 1, NIMS 2　*Michio Ikezawa 1, Yoshiki Sakuma 2, Yasuaki Masumoto 1
	17	Stark effect in a quantum double ring induced by an in-plane electric field	NIMS 1,Tsukuba Univ. 2　*Yamagiwa Masakazu 1, Kuroda Takashi 1, Mano Takaaki 1, Sakoda Kazuaki 1,2, Koguchi Nobuyuki 1
	18	Photoluminescence from single self-assembled InAs quantum rings embedded in GaAs	RIES 1, Hokkaido Univ. 2, JST-CREST 3, UCSC 4　*Masafumi Jo 1, Yuujiro Hayashi 1, Hidekazu Kumano 1, Ikuo Suemune 1,3, Hirotaka Sasakura 3, Satoshi Adachi 2,3, Shunnichi Muto 2,3, S. Sraprapapich 4, C.W. Tu 4
	19	Low temperature cathodoluminescence properties in nanometer-scale region of GaAs/AlGaAs pyramidal cap structure	Osaka University 1,CREST-JST 2,Ehime University 3　*Sawada Yuji 1,Ichimiya Masayoshi 1 2,Ashida Masaaki 1 2,Ozaki Shinji 1,Shimomura Satoshi 3,Itoh Tadashi 1 2
	20	Dynamic Polarization Anisotropy in GaAs Dynamic Quantum Dots formed by Surface Acoustic Waves	NTT Basic Research Labs. 1, NTT-AT 2, Paul Drude Inst. 3 　*Sogawa Tetsuomi 1, Sanada Haruki 1, Gotoh Hideki 1, Yamaguchi Hiroshi 1, Miyashita Sen 2, Santos Paulo 3
△	21	Fabrication of vertically stacked SiGe quantum nanodisk structure by using defect-free neutral beam etching 2	Tohoku Univ. 1, Keio Univ. 2, Musashi Inst. Tech. 3　*Yonemoto Masahiro 1, Miyamoto Satoru 2, Hirano Rii 2, Sawano Kentarou 3, Itoh Kohei 2, Shiraki Yasuhiro 3, Samukawa Seiji 1
△	22	High-sensitivity photodetection using double barrier resonant tunneling structures	IIS/CINQIE, Univ. of Tokyo　*Takenaka Satoshi, Shibata Kenji, Hirakawa Kazuhiko
▲△	23	Carrier spin relaxation in undoped GaAs/AlGaAs double quantum wells	Waseda Univ. 1, Hokkaido Univ. 2　*Lu Shulong 1, Ushiyama Takafumi 1, Tackeuchi Atsushi 1, Muto Shunichi 2
△	24	Fabrication of InGaAs/InAlAs Five-layer Asymmetric Coupled Quantum Well by MOVPE and MBE and Their Characterization	Yokohama Nat’l Univ. 1,RCAST 2 and Dep. Elect. Eng. 3,The Univ. of Tokyo,Tokyo Univ. Agri. Tech. 4,Kanazawa Inst. Tech. 5　*Hasegawa Ryo 1,Ohe Hideki 2,Arakawa Taro 1,Shimizu Hiromasa 4,Sugiyama Masakazu 3,Tada Kunio 5,Nakano Yoshiaki 2
12.2 Heterostructures and Quantum Nanostructures
September 7
7a-N-　/ III
		Short Presentation (5min.) 9:45〜12:00 7a-N-1〜24　Poster Session 15:30〜17:30
	1	Observation of Highly Efficient Spontaneous Emission from Nanostructures Grown on Patterned Substrates	AIST 1　*Xue-Lun Wang 1, Shigenori Furue 1
	2	Enhancement of light electric field intensity in GaAs/AlAs multilayer structures	Univ. of Tokushima 1　*Kanbara Toshiyuki 1, Morita Ken 1, Kitada Takahiro 1, Isu Toshiro 1
	3	Optical anisotropy of InGaAs　strained quantum wells on (11n)A high index substrates	Univ. of tokushima　*Nobuyoshi Niki 1, Ken Morita 1, Takahiro Kitada 1, Toshiro Isu 1
	4	Picosecond Response of Optical Kerr effect in Weakly Confined Exciton	NICT 1, CREST-JST 2, Kobe Univ. 3, The Univ. of Tokushima 4　*Kanno Atsushi 12,Katouf Redouane 12, Kojima Osamu 123, Ishi-Hayase Junko 12, Tsuchiya Masahiro 12, Isu Toshiro 124
	5	Investigation of optical absorption spectra of GaAs/AlAs multiple quantum wells fabricated on GaAs a substrate by using surface photo-voltage and piezoelectric photo-thermal techniques	Univ. of Miyazaki 1, CRC, Univ. of Miyazaki 2　 *Wang Ping 1,Kurayama Shingo 1,Sakai Kentaro 2,Fukuyama Atsuhiko 1,Akashi1 Yoshito 1,Ikari Tetsuo 1
	6	Various photoluminescense signals from excited subbands in GaAs/AlAs multi-quantum wells	Doshisha Univ. 1, Osaka City Univ. 2　*Kitamura Hiroshi 1, Hiratsuka Shingo 1, Hosoda Makoto 2, Ohtani Naoki 1
	7	Effects of Electron-Electron Interaction in Electron Spin Precession	Konan Univ. 1, Konan Univ. Quantum Nano-Tech. Lab. 2, NTT Basic Reserch Labs. 3　*Shichi Wataru 1, Ito Testu 2, Okami Yoshikata 1, Ichida Masao 1, 2, Gotoh Hideki 3, Kamada Hidehiko 3, Ando Hiroaki 1, 2
	8	Photoconductance imaging of a quantum point contact under a local optical excitation	Univ. of Tsukuba 1, CREST-JST 2　*Hironori Ito 1, Shintaro Nomura 1,2
	9	Normal-incident intersubband absorption in EuTe/PbTe superlattices	Shizuoka Univ. 　Cao Daoshe, Veis Martin, Shinsuke Morioka, Inoue Yoku, *Ishida Akihiro
	10	Magneto-Optical Effects on 1D Excitons in Tightly Confined Quantum Wires	Teikyo Univ. 1, Toyota Inst. of Tech. 2, IIS Univ. of Tokyo 3　Kondo Naoki 1 3, Sakaki Hiroyuki 2 3
▲	11	Wire-Length Dependence of Polarization Anisotropy in GaInAsP/InP Quantum-Wire Structures	QNERC Tokyo Inst. Tech. 1, Dept. of Electrical and Electronic Engineering Tokyo Inst. Tech. 2, JST-CREST 3　*Dhanorm Plumwongrot 1, Yosuke Tamura 1, Yoshifumi Nishimoto 1, Munetaka Kurokawa 1, Takeo Maruyama 1,3, Nobuhiko Nishiyama 2, Shigehisa Arai 1,3
	12	Lateral confinement of self-organized quantum wires for 1.55μm VCSELs on (775)B InP substrates	Ehime Univ.1,Osaka Univ.2　Imazu Sinziro 1,shimomura Satoshi 1,*Matsugi Toyokazu 1,Mouri Naoyoshi 1,Ozaki shinzi 2,Fujita Takeya 2
		Break 10:45〜11:00
	13	Gain spectra of a self-organized QWR laser structure grown on (775)B GaAs substrates by MBE.	Ehime Univ 1,Osaka Univ 2　*Imadu Shinjiro 1,Mouri Naoyoshi 1,Matsugi Toyokazu 1,Fujita Takeya 2, Shimomura Satoshi 1
	14	Structural evaluation for GaP/GaAs superlattice nanowires by x-ray diffraction	Rigaku Corp. 1, NTT Basic Research Labs. 2　*Omote Kazuhiko 1, Tateno Kouta 2, Ito Yoshiyasu 1
	15	Electrical characterization of InGaAs related nanowire grown by selective area MOVPE	Hokkaido Univ. 1　*Noborisaka Jinichiro 1, Sato Takuya 1, Motohisa Junichi 1, Hara Shinjiro 1, Fukui Takashi 1
	16	Micro-photoluminescence spectroscopy of single InP nanowires grown by SA-MOVPE	Grad. Sch. of IST, Hokkaido Univ. 1, RCIQE, Hokkaido Univ. 2　*Kobayashi Yasunori 1, Fukui Masayasu 1, Motohisa Junichi 1, Fukui Takashi 1,2
	17	Spectroscopy and Imaging of GaAs/InGaAs/GaAs Nanowires	Grad. sch. of IST and RCIQE, Hokkaido Univ. 1　*Fukui Masayasu 1, Kobayashi Yasunori 1, Motohisa Junichi 1, Fukui Takashi 1
	18	Preparation of AlN/GaN hetero structure nanowire by Vapor-liquid-solid mechanisms.	Shizuoka Univ. 1.2　*Takuya Murakami 1. Naoki Uchida 1. Yoku Inoue 1. Akihiro Ishida 1. Hidenori Mimura 2.
	19	Growth control of VLS-grown GaN nanowire by MOCVD	Shizuoka Univ. 1,2　*Tajima Akinori 1,Inoue Yoku 1,Ishida Akihiro 1,Mimura Hidenori 2
▲	20	InAs nanowire field effect transistor	NTT BRL, NTT corporation 1　*Guoqiang Zhang 1, Kouta Tateno 1, Satoru Suzuki 1, Tetsuomi Sogawa 1, Hidetoshi Nakano 1
▲	21	GaP/GaAs/GaP core-shell nanowires grown on Si substrate	NTT BRL, NTT corporation 1　*Guoqiang Zhang 1, Kouta Tateno 1, Haruki Sanada 1, Tetsuomi Sogawa 1, Hidetoshi Nakano 1
	22	MBE-VLS growth mechanism of GaAs nanowires on silicon substrate	Nagoya Univ.　*M. Yamaguchi 1, J.H. Paek 1, T. Nishiwaki 1, and N. Sawaki 1
	23	AlGaInAs nanowires by VLS growth method	NTT Basic Research Labs. 1,Rigaku 2　*Tateno Kouta 1,Zhang Guoqiang 1,Omote Kazuhiko 2,Tawara Takehiko 1,Sogawa Tetsuomi 1,Nakano Hidetoshi 1
	24	Quantum-well microtubes and their optical emission characteristics	Osaka City Univ. 1　Hosoda Makoto 1
12.3 Process Technologies and Interface Physics
September 4 9:00〜17:45
4a-N-　/ III
	1	Thermal annealing behaviors of GaP(001) surface	Gunma Univ. 1, Gunma Univ. 2　Ogawa Tatsuya 1, Adachi Sadao 2
	2	Selective wet oxidation of AlGaAs for nano lasers	Osaka Univ. 1　*Kawano Takayuki 1, Momose Hideki 1, Kondow Masahiko 1
	3	Control of HfO2/GaAs Interface by Using Si Interface Control Layer	Hokkaido Univ. 1　*Akazawa Masamichi 1, Hasegawa Hideki 1
	4	Electrochemical formation and sensor applications of InP porous nanostructures	Res. Cent. for Integrated Quantum Electronics, Hokkaido Univ. 1　*Taketomo Sato 1, Akinori Mizohata 1, Tamotsu Hashizume 1
	5	Study of pore structure formed in anodized n-GaAs	Univ. of the Ryukyus　*Toubaru Masashi 1,Maehama Takehiro 1,Sonegawa Tomihiro 1
		Break 10:15〜10:30
	6	Dependence of Pore Diameter of Anodic Porous Alumina on Electrolyte Temperature	Tokyo Univ. of Agri. & Tech.　Yusuke Umezawa, Hidekazu Tsukui, Yoshitaka Morishita
	7	Study on liftoff process of In on amorphous arsenic mask	Grduate School of Engineering,Nagoya Univ. 1,VBL,Nagoya Univ. 2　*Suzuki Yuji 1,Tabuchi Masao 2,Takeda Yoshikazu Takeda 1
	8	Investigation of fabrication processes of compound semiconductor Self-Switching Diode	Waseda Univ. 1　*Komatsuzaki Yuji 1,Yoshiba Ippei 1,Kawaharazuka Atsushi 1,Horikoshi Yoshiji 1
	9	O2-Dry Etching Characteristics of Low-k Polymer for Wide Modulation Bandwidth VCSELs	Tokyo Tech. Tech. Dep. 1, SONY 2, Tokyo Tech. P&I Lab. 3 　Akihiro Matsutani 1, Naoki Jogan 2, Fumio Koyama 2, Kohroh Kobayashi 2
	10	The Relationship between Plasma Condition and TDDB Lifetime of MIM Capacitors.	Eudyna Devices Inc.　Kagiyama Tomohiro 1, Tosaka Yasuhiro 1, Yano Hiroshi 1
		Lunch 11:45〜13:00
4p-N-　/ III
	1	Depth profile of strain in AlGaN grown on GaN substrate characterized by EBSD technique	Matsushita Electric Industrial Co. Ltd.　*Ishido Teruki 1, Matsuo Hisayoshi 1, Katayama Takuma 1, Ueda Tetsuzo 1, Inoue Kaoru 1, Ueda Daisuke 1
△	2	Energy levels in carbon-diffused GaN	RCIQE, Hokkaido Univ. 1　*Kimura Takeshi 1, Hashizume Tamotsu 1
	3	Characterization of defects in ion-implanted GaN using monoenergetic positron beams -I	Univ. of Tsukuba 1,Toyota Central R&D Lab. 2,AIST 3　*H.Nakamori 1,K.Ito 1,A.Uedono 1,Y.Nakano 2,T.Kachi 2,T.Odaira 3,R.Suzuki 3,S.Ishibashi 3
	4	Characterization of defects in ion-implanted GaN using monoenergetic positron beams -II	Univ. of Tsukuba 1, Toyota Central R&D Lab. 2, AIST 3　*K. Ito 1, H. Nakamori 1, A. Uedono 1, Y. Nakano 2, T. Kachi 2, T. Ohdaira 3,R. Suzuki 3, S. Ishibashi 3,
	5	P-type GaN formation by metal Mg thermal diffusion	Toyota Central R&D Labs. 1, Toyota Motor Corp. 2 　*Kikuta Daigo 1, Kanechika Masakazu 1, Ishiguro Osamu 1, Kodama Masahito 1, Sugimoto Masahiro 2, Uesugi Tsutomu 1, Kachi Tetsu 1
	6	Electrical characteristics of Ni/p-GaN contacts ---Mg-doping-concentration dependence ---	Univ. of Fukui　*Fukushima Yoshihiro, Ogisu Keita , Kuzuhara Masaaki, Shiojima Kenji
△	7	Influence of Cl2 plasma treatment on electrical properties of metal/p-GaN interfaces	RCIQE, Hokkaido Univ. 1, TOYOTA Motor Co. 2, Toyota Central R&D Labs., Inc. 3　*Ogawa Eri 1, Hashizume Tamotsu 1, Sugimoto Masahiro 2, Kachi Tetsu 3, Uesugi Tsutomu 3, Soejima Narumasa 3
△	8	Anodic oxide layer on n-GaN surface and its application to device structures	Graduate School of Information Science and Technology, Hokkaido Univ. 1, Research Center for Integrated Quantum Electronics 2, Paul-Drude Institute 3,　*Shiozaki Nanako 1,2, Fumitaro Ishikawa 3, Achim Trampert 3, Holgar T. Grahn 3, Sato Taketomo 1,2, Hashizume Tamotsu 1,2,
△	9	Study on AlGaN/GaN HEMT structures on 4-inch Si(111) substrates with thick buffer layers	Nagoya Institute of Technology　Yutaka Terada 1,Takaaki Suzue 1,Hiroyasu Ishikawa 1,Takashi Egawa 1
		Break 15:15〜15:30
△	10	Insulator/Semiconductor Interface Characterization by MIS type GaN Diode	Institute of Technology and Science, The University of Tokushima　*Hiroyuki Nokubo 1,Masaya Okada 1,Chengyu Hu 1,Jin-Ping Ao 1,Yasuo Ohno 1
	11	Deposition of AlOx on GaN using diethyl-aluminum ethoxide and characterization of AlOx/GaN interface	Hokkaido Univ. 1, RCIQE 2　Matsuyama Tetsuya 1 2, Mizue Chihoko 1 2, Hashizume Tamotsu 1 2
	12	Effects of Cat-CVD SiN passivation films on Current-Collaps of GaN-HEMT	Toshiba Corp. Semiconductor Co. 1, ULVAC, Inc Chiba Inst. for Super Materials 2 　*Yasunobu Saito 1, Yorito Kakiuchi 1, Takao Noda 1, Masami Nagaoka 1, Makiko Takagi 2, Tetsushi Fujinaga 2
	13	Effects of crystalline quality of low-temperature GaN cap layer on current collapse in AlGaN/GaN HFETs	New Japan Radio Co.,Ltd. 1, Nagoya Inst. of Tech. 2　*Waki Eiji 1, Deguchi Tadayoshi 1, Nakagawa Atsushi 1, Egawa Takashi 2
	14	Influence to the leakage current of the gate electrode formation　process in GaN/AlGaN/GaN-HEMT	Hosei Univ. 1, Chemitronics. 2　*Masakazu Kawada 1, Taku Tajima 1, Kazuki Nomoto 1, Rrinao Ohta 1, Takeshi Kasai 2, Masataka Satoh 1, Tohru Nakamura 1
	15	Dual-energy Si ion implantation in GaN/AlGaN/GaN layers on Al2O3	Hosei Univ. 1,Waseda Univ.　*Shiino Tomohisa 1, Saitoh Tomohiro 1,Satoh Masataka 1,Nakamura Tohru 1, Inada Taroh 2
	16	Dynamic Properties of Pd/AlGaN/GaN Schottky Diode Hydrogen Sensor in Air	Hokkaido Univ. 1　*Akazawa Masamichi 1, Hasegawa Hideki 1
△	17	Solar-blind AlGaN Avalanche Photodetectors on AlN templates	Nagoya Institute of Technology 1　*Tokura Fumiyuki 1,Jiang Hao 1,Ishikawa Hiroyasu 1,Egawa Takashi 1
	18	Isothermal DLTS Study of Drain Conductance Transient for AlGaN/GaN HEMT	Aichi Institute of Technorogy 1,Toyota Central R&D Labs. 2　Seo Takeshi 1,Yoshida Kazuhiro 1,*Tokuda Yutaka 1,Ueda Hiroyuki 2,Soejima Narumasa 2,Ishiguro Osamu 2,Kachi Tetsu 2
12.4 Ultrafast/Functional Electron Devices
September 4 13:00〜17:30
4p-K-　/ III
	1	Thermoelectric properties of single-crystalline siricon carbide for self-cooling devices	Chubu Univ. 1, AIST 2, National Defense Academy 3, Yokohama National Univ. 4, Shimane Univ. 5　*Fukuda Shinji 1, Kato Tomohisa 2, Okamoto Yoichi 3, Nakatsugawa Hiroshi 4, Kitagawa Hiroyuki 5, Hamabe Makoto 1, Yamaguchi Sataro 1
	2	High-frequency device characteristics of Schottky- and MIS-gate SiGe/Si HEMT	National Inst. of Information and Communications Technology 1, Fujitsu Lab. Ltd. 2　* Onojima Norio 1, Kasamatsu Akihumi 1, Hirose Nobumitsu 1, Mimura Takashi 1,2, Matsui Toshiaki 1
△	3	Confirmation of gate insulation in hot electron transistor controlled by insulated gate	Tokyo Tech 1, JST-CREST 2　*Hino Takahiro 1, Saito Hisashi 1, Miyamoto Yasuyuki 1,2, Furuya Kazuhito 1,2
	4	Intrinsic charging time of hot-electron emitter with thin non-doped layer	Tokyo Tech. 1, CREST-JST 2　*Yamada Tomohiro 1, Furuya Kazuhito 1,2, Miyamoto Yasuyuki 1,2
▲△	5	Lateral phase change memory capable of multi-state storage by using SbTeN based multi-layer	Gunma Univ. 1　You Yin 1, Naoya Higano 1, Kazuhiro Ohta 1, Akihira Miyachi 1, Hayato Sone 1,Sumio Hosaka 1
	6	Scaling Analysis of Nano-Scale InAs-HEMT Using Quantum Corrected Monte Carlo Method	Tokyo Univ. of Science 1, MIT 2　*Matsumoto Takayuki 1,Kawabata Takahiro 1,Hasegawa Masayuki 1,Fujishiro Hiroki 1,2
	7	Characterization of Hole Lifetime in InAlAs/InGaAs High Electron Mobility Transistors using 1.55-μm femto-second Pulse Laser	Tokyo Univ. of Science　*Yugo Nakagawa 1, Oura Masashi 1, Nobuhito Wakimura 1, Takuro Satou 1, Hirohisa　Taguchi 1, Tsutomu Iida 1, and Yoshifumi Takanashi 1
	8	Dependence of Carrier Lifetime in InAlAs/InGaAs HEMTs on Gate-to-Source Voltage	Tokyo Univ. 1　*Nobuhito Wakimura 1, Masashi Oura 1, Yugo Nakagawa 1, Hirohisa Taguchi 1, Tsutomu Iida 1, and Yoshifumi Takanashi 1
	9	Epitaxial lift-off of InGaAs/InAlAs metamorphic heterostructures and their bonding on AlN ceramic substrates	JAIST　Shindo Masanori 1,Jeong Yonkil 1,Tanaka Nariaki 1,Akabori Masashi 1,Suzuki Toshi-kazu 1
	10	InAlAs/InGaAs HEMTs with Minimum Noise Figure of 1.0 dB at 94 GHz	Fujitsu 1,Fujitsu Labs. 2　*Takahashi Tsuyoshi 1,Sato Masaru 2,Makiyama Kozo 1,Hirose Tatsuya 2,Hara Naoki 1
		Break 15:30〜15:45
	11	Development of AlGaN/GaN HFET and related characterization technologies	Dep. of Photonics, Ritsumeikan Univ.1, The Organization for the Promotion of COE Program Ritsumeikan Univ. 2　*Yasushi Nanishi 1,Akira Suzuki 2, Junjiro Kikawa 1, Tsutomu Araki1
	12	G-D electric field dependence of current collapse for power AlGaN/GaN HFET	Yokohama R&D Laboratories, The Furukawa Electric Co., Ltd. 1　Nariaki Ikeda 1, Syuusuke Kaya 1, Jiang Li 1, Kazuo Kato 1, Sadahiro Kato 1, Seikoh Yoshida 1
	13	Investigation on Current Collapse in AlGaN/GaN MIS HFET by Gate Bias Stress	Institute of Technology and Science, The University of Tokushima　*Yasuo Ohno, Yuya Yamaoka, Masaya Okada, Chengyu Hu and Jin-Ping Ao
	14	The AlGaN Barrier Thickness Dependence on The current collapse of AlGaN/GaN HFETs	AIST 1, TUS 2, TAIYO NIPPON SANSO 3,　Guanxi Piao 1, Shuichi Yagi 1, Mitsuaki Shimizu 1, Masaki Inada 1, *Hiroshi Chonan 2, Hisayuki Nakanishi 2,Akinori Ubukata 3, Nakao Akutsu 3
	15	Current Collapse Characteristic of AlGaN/GaN MIS-HEMT with Multilayered Insulator Structure	AIST 1, TAIYO NIPPON SANSO Corporation 2　*Shuichi Yagi 1, Mitsuaki Shimizu 1, Yoshiki Yano 2, Akinori Ubukata 2, Nakao Akutsu 2
	16	The Effect on Current Collapse Characteristics of GaN Cap Layer in AlGaN/GaN HEMT	AIST 1,TAIYO NIPPON SANSO 2　*Guanxi Piao 1,Shuichi Yagi 1,Mitsuaki Shimizu 1,Masaki Inada 1,Akinori Ubukata 2,Nakao Akutsu 2
12.4 Ultrafast/Functional Electron Devices
September 5 9:00〜11:45
5a-K-　/ III
	1	High Voltage AlGaN/GaN SBD with Low Temperature GaN Cap Layer	New Japan Radio 1, Nagoya Inst. of Technology 2　*Atsushi Kamada 1, Katsuyuki Matsubayashi 1, Yutaka Terada 2,Atsushi Nakagawa 1 and Takashi Egawa 2
	2	High-breakdown-voltage GaN Vertical Schottky Barrier Diodes with Field Plate Structures	Semiconductor Technologies R&D Labs., Sumitomo Electric Industries, Ltd. 1　*Horii Taku 1, Miyazaki Tomihito 1, Saitou Yuu 1, Hashimoto Shin 1, Tanabe Tatsuya 1, Kiyama Makoto 1
	3	Correlation between electrical properties and dislocations in Pd/GaN vertical conducting Schottky diodes	Dept. of Environmet Tech. and Urban Planning, Nagoya Inst. of Tech.1, Dept. of Eng. Phys., Electron. and Mech., Nagoya Inst. of Tech.2, Research Center for Nano-Device and System3　Hiroyasu Ishikawa1, Fumiyuki Tokura2, Takashi Jimbo3 and Takashi Egawa3
△	4	Schottky Characteristics of High Temperature Annealed ZrN for n-GaN	The Univ. of Tokushima 1,Kyushu Inst. of Tech. 2,ISAS/JAXA 3,POWDEC K.K. 4　*Kouichi Sawada 1,Satoko Shinkai 2,Jin-Ping Ao 1,Masaya Okada 1,Chengyu Hu 1,Kazuyuki Hirose 3,Hiroji Kawai 4,Yasuo Ohno 1
	5	Surface conduction in the vicinity of Schottky gates on AlGaN/GaN heterostructures	Research Center for Integrated Quantum Electronics, Hokkaido Univ.　Kotani Junji 1, Tajima Masafumi 1, Kasai Seiya 1, Hashizume Tamotsu 1,
		Break 10:15〜10:30
	6	Relation between Buffer-Related Gate Lag and Source Resistance in AlGaN/GaN HEMTs	Shibaura Institute of Technology 1　*Nakajima Atsushi 1, Itagaki Keiichi 1, Horio Kazushige 1
	7	Reduction of Buffer-Related Current Collapse in GaN FETs by Introducing a Field Plate	Shibaura Institute of Technology　*Itagaki Keiichi 1, Nakajima Atsushi 1, Horio Kazushige 1
	8	Temperature dependence of AlGaN-based vertical conducting pin junction diodes	NTT Basic Research Labs. 1　*Nishikawa Atsushi 1, Kumakura Kazuhide 1, Makimoto Toshiki 1
△	9	High temperature operation of npn GaN/InGaN double heterojunction bipolar transistors	NTT Basic Research Labs. 1　*Nishikawa Atsushi 1, Kumakura Kazuhide 1, Makimoto Toshiki 1
	10	Impact of base acceptor concentration on characteristics of n-GaN/p-SiC/n-SiC HBTs	Kyoto Univ. 1　*Miyake Hiroki 1, Amari Koichi 1, Suda Jun 1, Kimoto Tsunenobu 1
12.4 Ultrafast/Functional Electron Devices
September 6 9:00〜17:15
6a-K-　/ III
	1	Determination of crystal structure of in-situ SiNx ultrathin films grown on AlGaN using first-principles calculation	Matsushita Elec. Ind. 1　Takizawa Toshiyuki 1, Ueda Tetsuzo 1
	2	DC characteristics of AlGaN/GaN-HEMTs with thermal CVD SiN surface passivation film.	Oki Electric Industry Co., Ltd.　*T. Marui , S. Hoshi , M. Itoh , I. Tamai , F. Toda , H. Okita, Y. Sano and S. Seki
△	3	Evaluation of UV response characteristics of AlOx/n-GaN MIS structure.	Hokkaido Univ. 1, RCIQE 2　*Mizue Chihoko 1 2, Matsuyama Tetsuya 1 2, Kotani junji 1 2, Miczek Marcin 1 2, Hashizume Tamotsu 1 2
	4	High-quality silicon oxide film for GaN MIS device	Dept. of Electronic Engineering, Univ. of Electro-Communs. 1　*Seiji Kimura 1, Hiroshi Ono 1, Kazuo Uchida 1, Shinji Nozaki 1
△	5	Characterization of AlGaN/GaN HEMT processed by plasma	Hokkaido Univ. 1, RCIQE 2　Masafumi Tajima 1 2, Junji Kotani 1 2, Hashizume Tamotsu 1 2
▲	6	Low Resistance Ohmic Contact to Dry-Etched p-GaN with Ni Activation	Institute of Technology and Science,The University of Tokushima　Cheng-Yu Hu, M.Okada, J.-P.Ao, Y.Ohno
		Break 10:30〜10:45
	7	Low Frequency Noise Characteristics of Ion Implanted GaN/AlGaN/GaN HEMT	Hosei Univ. 1　*Masahiro Nakajima 1,Tomo Ohsawa 1,Kazuki Nomoto 1,Tohru Nakamura 1
	8	Dose dependence of the sheet resistance of Si implanted GaN/AlGaN/GaN	Hosei Univ. 1,Waseda Univ. 2　*Saitoh Tomohiro 1,Kaziwara Hiroaki 1,Nakamura Toru 1,Satoh Masataka 1,Inada Taro 2
	9	Temperature Dependence of the Characterization of Ion Implanted GaN/AlGaN/GaN HEMT on Si Substrates	Hosei Univ. 1,　* Tomo Ohsawa 1,Masahiro Nakajima 1,Kazuki Nomoto 1,Masataka Sato 1,Tohru Nakamura 1
	10	Gate length Dependence analyses of Ion Implanted AlGaN/GaN HEMT	Hosei Univ. 1,　*Miaawa Tomonori 1,Tsukamoto Kenta 1,Taku Tajima 1, Nomoto Kazuki 1,Satoh Masataka 1,Nakamura Tohru 1
	11	Ion-Implanted GaN/AlGaN/GaN HEMTs with Low Contact Resistance	Hosei Univ. 1　Nomoto Kazuki 1, Satoh Masataka 1, Nakamura Tohru 1
		Lunch 12:00〜13:00
6p-K-　/ III
	1	Characterization of two-dimensional electron gas in AlN/GaN hetero-structure using thin AlN barrier layer	Oki Electric Industry Co., Ltd.　*Tamai Isao, Toda Fumihiko, Hoshi Shinichi, Marui Toshiharu, Okita Hideyuki, Itoh Masanori, Sano Yoshiaki and Seki shohei
△	2	Optimization of AlGaN/GaN HEMT structures on SiC substrates- Effects of number of pairs in GaN/AlN multilayers -	Nagoya Inst. of Tech.　*Hiroyuki Kawato 1, Hiroyasu Ishikawa 1, Takashi Egawa 1
△	3	KFM measurement of cross-sectional potential distribution of AlGaN/GaN-HFETs with different thickness of GaN buffer layer	Ritsumeikan Univ. 1, R&D Association for Future Electron Devices 2　Hinoki Akihiro 1, Kamiya Shinichi 2, Kikawa Junjiroh 1,2, Kosaka Kenichi 1, Araki Tsutomu 1, Suzuki Akira 1,2, Nanishi Yasushi 1
	4	Dependence of maximum drain current and transconductance on device structure in AlGaN/GaN HEMT(2)	AIST 1,TAIYO NISSAN 2　*Inada Masaki 1,Shimizu Mitsuaki 1,Pyou Guaxi 1,Ubukata Akinori 2,Yano Yoshiki 2,Akutsu Nakao 2
	5	Al mole fraction dependence of the characteristics of AlyGa1-yN/AlxGa1-xN Schottky diodes	Mitsubishi Electric Corp. 1, RIKEN 2, Tokyo Tech. 3　*Takuma Nanjo 1, Misaichi Takeuchi 2,3, Muneyoshi Suita 1, Yuji Abe 1, Toshiyuki Oishi 1, Yasunori Tokuda 1 and Yoshinobu Aoyagi 3,2
	6	Characterization of TiN-Gate AlGaN/GaN HFET	Univ. of Tokushima 1, Kyushu Inst. of Technology2, ISAS/JAXA3, POWDEC K.K.4　J.-P. Ao1, K. Sawada1, S. Shinkai2, M. Okada1, C.-Y. Hu1, K. Hirose3, H. Kawai4 and Y. Ohno1
	7	Field Plate Structure Dependence of the Gate Charge in High Voltage GaN-HEMTs	Semiconductor Company, Toshiba Corp. 1, R&D Center, Toshiba Corp. 2　Saito Wataru 1, Nitta Tomohiro 1, Kakiuchi Yorito 1, Saito Yasunobu 1, Tsuda Kunio 2, Omura Ichiro 1, Yamaguchi Masakazu 1
△	8	Highly stable drain current at high temperatures in multi-mesa-gate AlGaN/GaN HEMTs	Hokkaido Univ. 1, RCIQE 2　Tamura Takahiro 1,2, Kotani Junji 1,2, Kasai Seiya 1,2, Hashizume Tamotsu 1,2
		Break 15:00〜15:15
	9	Proposal of a normally off AlGaN/GaN HFET structure with a charged floating gate	Kogakuin Univ.　Hasegawa Fumio
	10	Cryogenic Characteristics of Sub-100-nm-Gate AlGaN/GaN MIS-HEMTs	National Institute of Information & Communications Technology 1, Fujitsu Laboratories Ltd. 2　*Endoh Akira 1, Watanabe Issei 1, Yamashita Yoshimi 2, Mimura Takashi 1,2, Matsui Toshiaki 1
	11	Design of Insulator/AlGaN Structure in MIS AlGaN/GaN Heterostrucuture Field-Effect Transistors	NTT Phononics Labs. 1, NTT-AT 2, NTT Basic Research Labs. 3　Maeda Narihiko 1, Hiroki Masanobu 1, Watanabe Noriyuki 1, Oda Yasuhiro 1, Yokoyama Haruki 1, Yagi Takuma 2, Makimoto Toshiki 3, Enoki Takatomo 1, Kobayashi Takashi 1
	12	Fabrication of AlGaN/GaN MIS-HEMT with HfAlOx gate insulator	Fujitsu Ltd.Fujitsu Lab.　Kanamura Masahito 1,2, Ohki Toshihiro 1,2, Makiyama Kozo 1,2, Okamoto Naoya 1,2, Imanishi Kenji 1,2, *Kikkawa Toshihide 1,2, Hara Naoki 2, Joshin Kazukiyo 1,2
	13	Study of GaN MOSFETs with buried p-GaN	Toyota Central R&D Labs. 1, Toyota Motor Corp. 2　*Ueda Hiroyuki 1, Sugimoto Masahiro 2, Kodama Masahito 1, Hayashi Eiko 1, Soejima Narumasa 1, Kanechika Masakazu 1, Ishiguro Osamu 1, Uesugi Tsutomu 1, Kachi Tetsu 1
△	14	Normally-off AlGaN/GaN MOSFET with HfO2 Gate Insulator	Dept. of Quantum Eng., Nagoya Univ. 1,VBL, Nagoya Univ. 2,Matsushita Electric Industrial Co. Ltd 3　*Sugiura Shun 1,Kishimoto Shigeru 1,2,Mizutani Takashi 1,Kuroda Masayuki 3,Ueda Tetsuzou 3,Tanaka Tsuyoshi 3
	15	DC-DC converter using AlGaN/GaN HFETs	Furukawa Electric, Yokohama Lab.　Yoshida Seikoh 1, Masuda Mitsuru 2, Niiyama Yuki 1, Li Jiang 1, Nomura Takehiko 1, Ikeda Nariaki 1
	16	Application for the power factor correction circuit of AlGaN/GaN HFETs	Furukawa Electric Yokohama Lab.　Yoshida Seikoh, Masuda Mitsuru, Niiyama Yuki, Kambayashi Hiroshi, Li Jiang, Nomura Takehiko, Ikeda Nariaki
12.5 Optoelectric Properties and Devices
September 4 9:00〜12:00
4a-L-　/ III
	1	The sol-gel synthese and the characterization of the Ce ion doped CaF2 nano-particles	The Univ. of Electro-Communications 1　*Murayama Takafumi 1,Kawano Katsuyasu 1
△	2	Influence of water additive on glyocothemal synthesis of ZnGa2O4:Mn2+ nanophosphors	Keio Univ. 1　*Morio Osada 1, Masahiro Takesada 1, Tetsuhiko Isobe 1
△	3	Liquid-dispersed CdSe/ZnS Nanocrystal Ion Beam Deposition for Fabricating Light Emitting Devices	HOYA Corp.　Tani Yuki 1, Kobayashi Satoshi 1, Kawazoe Hiroshi 1
	4	Liquid dispersed quantum dot ion beam deposition method	HOYA Corp. R&D Center 1　Satoshi KOBAYASHI 1, Yuki TANI 1, Hiroshi KAWAZOE 1
△	5	Synthesis and optical characterization of green and red compound phosphor nanoparticles by the ball-milling method	Waseda Univ., Lab. for Mat.Sci.&Tech. 1　*Hamaguchi Sayako 1, Kobayashi Masakazu 1
		Break 10:15〜10:30
	6	Electroluminescent devices utilizing chemically synthesized ZnS:Cu nanocrystals	Osaka Univ. 1　*Yamaguchi Daisaku 1,Ishiizumi Kazuya 1,Adachi Daisuke 1,Toyama Toshihiko 1,Okamoto Hiroaki 1
	7	High-luminance ZnS:Mn nanostructured thin-film electroluminescent devices	Graduate School of Eng. Sci., Osaka Univ. 1　*Daisuke Adachi 1, Toshihiko Toyama 1, Hiroaki Okamoto 1
	8	Excitation mechanism of luminescence center in chemically synthesized ZnS:Mn nanocrystals	Graduate School of Eng. Sci., Osaka Univ. 1　*Daisuke Adachi 1, Takeshi Hama 1, Daisaku Yamaguchi 1, Toshihiko Toyama 1, Hiroaki Okamoto 1
	9	Electroluminescent devices in chemically synthesized ZnS:Mn nanocrystals prepared under different conditions.	Osaka Univ 1　*Hama Takeshi 1,Adachi Daisuke 1,Toyama Toshihiko 1,Okamoto Hiroaki 1
	10	Property variation of Cu-In-S fluorescent nanocrystals by post treatment	AIST 1, Kyushu Univ. 2, CREST 3 　*Masato Uehara 1, Kousuke Watanabe 2, Hiroyuki Nakamura 1, Hideaki Maeda 1,2,3
	11	Consistent determination of emission efficiencies of semiconductor nanocrystals having various forms	National Inst. of Adv. Indust. Sci. & Tech.1　*Norio Murase1, Chunliang Li1
12.5 Optoelectric Properties and Devices
September 4 9:00〜17:30
4a-ZK-　/ III
	1	Photo conductive properties induced by CoSix nano structures	Nagaoka Univ. of Tech 1　*Nakanishi Hirokazu 1,Yasui Takanari 1
△	2	Dephasing dynamics of exciton fine structure in uniaxially-strained GaN	Hokkaido Univ. 1.2, Yamaguchi Univ. 3, IIS, Univ. of Tokyo 4　*Ishiguro Tetsuro 1,2, Toda Yasunori 1,2, Adachi Satoru 1, Hoshino Katsuyuki 3, Arakawa Yasuhiko 4
	3	Spatially-resolved measurement for exciton dephasing in a GaN film	Hokkaido Univ. 1,Yamaguchi Univ. 2　*Yamaguchi Kazuharu 1,Toda Yasunori 1,Adachi Satoshi 1,Ishiguro Tetsurou 1,Hoshino Katsuyuki 2, Tadatomo kazuyuki 2
	4	High-precision nonlinear optical measurement of uniaxial strain in GaN epitaxial films	Hokkaido Univ. 1, Yamaguchi Univ. 2, Univ. of Tokyo 3　*Y. Toda 1, T. Ishiguro 1, S. Adachi 1, K. Hoshino 2, K. Tadatomo 2, Y. Arakawa 3
	5	Time-resolved spectroscopy of ZnO films grown by rf-magnetron spattering method	Hokkaido Univ. 1, Osaka City Univ. 2　Oka Yuki 1, Adachi Satoru 1, Toda Yasunori 1, Wakaiki Shuji 2, Daedwi Kim 2, Nakayama Masaaki 2
	6	Effect of the reaction temperature on the formation of GaN seed particles in the two-stage vapor phase method	Reserch Inst. of Electron. Shizuoka Univ. 1　*Mori Tatsuhiro 1, Komoda Hironori 1, Kominami Hiroko 1, Nakanishi Yoichiro 1, Hara Kazuhiko 1
	7	Synthesis of Zn doped GaN fine crystalline particles by the two-stage vapor phase method –comparison of Zn sources–	Research Inst. of Electron. Shizuoka Univ. 1　*Komoda Hironori 1, Mori Tatsuhiro 1, Kominami Hiroko 1, Nakanishi Yoichiro 1, Hara Kazuhiko 1
		Break 10:45〜11:00
	8	Temperature dependence of internal quantum efficiency in InGaN-based quantum wells	Yamaguchi Univ. 1, Mitsubishi Cable Ind. Ltd. 2　*Iwamura Kazuto 1, Kuronaka Takahiro 1, Shibano Ryota 1, Yamada Yoichi 1, Taguchi Tsunemasa 1, Kudo Hiromitsu 2, Okagawa Hiroaki 2
	9	Internal quantum efficiency of InGaN-based quantum wells fabricated on GaN substrates	Yamaguchi Univ. 1, Mitsubishi Cable Ind. Ltd. 2　*Kuronaka Takahiro 1, Iwamura Kazuto 1, Shibano Ryota 1, Yamada Yoichi 1, Taguchi Tsunemasa 1, Kudo Hiromitsu 2, Okagawa Hiroaki 2
	10	UV luminescent properties of hexagonal boron nitride powder	RIE Shizuoka Univ.　*Xin Liu 1, Hiroko Kominami 1, Yoichiro Nakanishi 1, Kazuhiko Hara 1
	11	Optical Properties of GaN and InGaN/GaN nanocolumns	Sophia Univ. 1, CREST-JST 2　*Inoue Masaya 1, Kouyama Kazuaki 1,2, Inose Yuuta 1, Suzuki Naoki 1, KunugitaHideyuki 1,2, Ema Kazuhiro 1,2, Sekiguchi Hiroto 1,2, Kikuchi Akihiko 1,2, Kishino Katsumi 1,2,
	12	Residual carrier effect on nonlinear optical response of weakly confined excitons	NiCT 1, Kobe Univ. 2, The Univ. of Tokushima 3, CREST-JST 4　Osamu Kojima 1,2,4, Toshiro Isu 1,3,4, Junko Ishi-Hayase 1,4, Atsushi Kanno 1,4, Redouone Katouf 1,4, Masahide Sasaki 1, Masahiro Tsuchiya 1,4
	13	Micro photoluminescence spectra of gate induced undoped GaAs quantum wells	NTT BRL 1, CREST-JST 2, Univ. of Tsukuba 3 　*Yamaguchi Masumi 1,2, Nomura Shintaro 1,2,3, Tsumura Kohei 2, Tamura Hiroyuki 1,2, Akazaki Tatsushi 1,2
		Lunch 12:30〜13:30
4p-ZK-　/ III
	1	Photoluminescence of Er in strained SiGe	Okayama Univ. 1　*Ishiyama Takeshi 1, Fukui Yuki 1, Inoue Kaito 1, Yamashita Yoshifumi 1, Kamiura Yoichi 1
	2	The Cathode-luminescence from Sm-doped anatase TiO2 thin films	Tokyo Univ. of Science 1,Toyo Univ. 2　*Kazutaka Ide 1,Susumu Harako 2,Syuji Komuro 2,Xinwei Zhao 1
	3	Improvement of light emission intensity of Er, O-codoped GaAs LED with separate confinement structure	Nagoya Univ. 1　*Tanaka Yuta 1,Uki Daisuke 1,Yamaguti Takehiro 1,Futi Shingo 1,Ujihara Toru 1,Takeda Yoshikazu 1
	4	Investigation of excitation processes in injection-type Er,O-codoped GaAs light-emitting diodes	Osaka Univ. 1 CASI-VBL, Osaka Univ. 2　*Fujita Asafumi 1, Tokuno Takehiro 1, Hidaka Keiji 1, Ichida Hideki 2, Terai yoshikazu 1, Kanematsu Yasuo 2, Fujiwara Yasufumi 1
	5	GaAs lasing characteristics of GaInP/GaAs:Er,O/GaInP laser diodes grown by organometallic vapor phase epitaxy	Osaka Univ. 1　*Fujii Kei 1, Hidaka Keiji 1, Yamamoto Dai 1, Terai Yoshikazu 1, Fujiwara Yasufumi 1
△	6	Observation of THz radiation from Er,O-codoped GaAs surface	Osaka Univ. 1, ILE Osaka Univ. 2　*Shimada Kazuya 1, Takemoto Shoichi 1, Terai Yoshikazu 1, Tonouchi Masayoshi 2, Fujiwara Yasufumi 1
	7	Phase separation and thin film formation of Er2SiO5 crystalline compound	Univ. of Electro-Communications 1　*Ushiyama Tomoyuki 1, Ohe Masaki 1, Isshiki Hideo 1, Kimura Tadamasa 1
	8	Optical and electrical characterization of Er2SiO5 nano-crystal embedded SiOx thin film	Univ. of Electro-Communications　*Samejima Takeru 1, Ushiyama Tomoyuki 1, Isshiki Hideo 1, Kimura Tadamasa 1
		Break 15:30〜15:45
	9	I-V characteristics of RE-doped ZnO thin films/Si structure formed by sol-gel method	Denkituushin Univ. 1　*Ozono Yuta 1,Kimura Tadamasa 1,Isshiki Hideo 1
▲△	10	Cathodeluminescence Property of ZnO Nanophosphors Prepared by Laser Ablation Method	Shizuoka Univ. 1　*Ou Qiongrong 1, Matsuda Takafumi 2, Shinji Kousuke 2, Ogino Akihisa 2, Nagatsu Masaaki 2
	11	Synthesis of ZnMgO powder and coating ZnO particles with a ZnMgO layer by sol-gel method	Res.Inst.Electron., Shizuoka Univ. 1　*Koketsu Naoyuki 1, Sano Tomoharu 1, Kominami Hiroko 1, Nakanishi Yoichiro 1, Hara Kazuhiko 1
	12	Monte-Carlo simulation of localization dynamics of excitons in ZnO and CdZnO quantum well structures	Takayuki Makino 1, Yoshihiro Takagi 1　Takayuki Makino 1, Yoshihiro Takagi 1
	13	Red Emission of Mn-doped GaS	Kurume Univ 1, Miyazaki Univ 2　Shigetomi Shigeru 1, Ikari Tetsuo 2
	14	Amorphous silica for VUV phosphor	National Inst. Advanced Industrial Science and Technology 1, Kyoto Inst.of Technology 2.　Tomoko Akai1, Wei Liu1, Masaki Murakami1, Isao Miyanoa1, Masaru Yamashita1 and Kohei Kadono2
	15	Correlation between Coloration and Optical Properties in Yttrium Oxysulfide Single Crystals	Fukui Univ 1,Fukui NCT 2,Shinshu Univ 3　*Tokunaga Syuji 1,Kitaura Mamoru 2,Iyou Minoru 3,Fukui Kazutosi 1
12.5 Optoelectric Properties and Devices
September 5 9:00〜18:00
5a-L-　/ III
	1	Luminescent properties of Er-containing metal oxide in U-band	Nagoya Univ. 1, EcoTopia Sience Inst., Nagoya Univ. 2　Ito Takaaki 1, Yoshino Masahito 1, Iwasaki Kota 1, Matsui Tsuneo 1,2, Nagasaki Takanori 2
	2	Excitation process of Yb3+, Nd3+ co-doped Bi2O3 -B2O3 glass phosphor	Nagoya Univ.1　Sakano Ayako,Fuchi Shingo,Takeda Yoshikazu
△	3	Valence state and coordinating anion structure around europium ion in crystalline and glassy SrB4O7	MSL, Tokyo Tech 1, FCRC, Tokyo Tech 2　*Shunsuke Koide 1, Satoru Matsuishi 2, Toshio Kamiya 1, Masahiro Hirano 2,Hideo Hosono 1,2
	4	Blue luminescence of Tb-Mg codoped CaZrO3	Kyushu Inst. Tech. 1　*Kazushige Ueda 1,Sho Sakagami 1,Katsuhiko Goto 1,Yutaka Nakachi 1
	5	PL and EL from Blue-Emitting Ti-Activated Stannate-Based Phosphor Thin Films Prepared by Sputtering Deposition	OEDS R&D Center, Kanazawa I.T.　Haruki Fukada 1,*Shun Matsui 1,Toshihiro Miyata 1,Tadatsugu Minami 1
	6	Blue-Emitting Bi-Activated Oxide Thin-Film EL Devices Fabricated Using Magnetron Sputtering Deposition	OEDS R&D Center, Kanazawa I.T.　*Haruki Fukada 1,Shun Matsui 1,Toshihiro Miyata 1,Makoto Ishii 1,Tadatsugu Minami 1
		Break 10:30〜10:45
	7	Crystal structure of Sr-Al-O:Eu2+ phosphor synthesized on single MgO substrate	Nagaoka Univ. Tech. 1, Chubu Chelest 2　*Komatsu Keiji 1, Nakamura Atsushi 2, Nambu Nobuyoshi 1,2, Ohshio Shigeo 1, Saitoh Hidetoshi 1
	8	Possibility of high luminescence in a morphology controlled phosphor material	Niigata Univ. 1,Hosokawa Powder Tech. Res. Inst.2 　*Toda kenji 1, Hosoume Masafumi 1, Uematsu Kazuyoshi 1, Sato Mineo 1, Watanabe Akira 2, Fukui Takehisa 2
	9	Synthesis and luminescence property of Sr-Al-O:Eu2+ phospor with Al2O3 particles	Nagaoka Univ. Tech. 1, Chubu Chelest Co.,Ltd. 2　*Tsuchida Shinya 1, Maruyama Hayato 1, Nakamura Atsushi 2, Ohshio Shigeo 1, Nambu Nobuyoshi 2,1, Saitoh Hidetoshi 1
	10	Cathodoluminescence of Sr-Al-O:Eu2+ phosphor with Al2O3 particle	Nagaoka Univ. Tech. 1, Chubu Chelest Co.,Ltd. 2　*Maruyama Hayato 1, Nakamura Atsushi 2, Ohshio Shigeo 1, Nambu Nobuyoshi 2,1, Saitoh Hidetoshi 1
	11	A Theoretical Study on Electronic Structures of SrMgAl10O17:Eu2+ Phosphor and Formation of Oxygen Vacancy	Dept. Appl. Chem., Tohoku Univ. 1, Adv. Sci. Mater., Hiroshima Univ. 2, NICHe, Tohoku Univ. 3　Hiroaki Onuma 1, Hiroaki Tanno 2, Riadh Sahnoun 1, Michihisa Koyama 1, Hideyuki Tsuboi 1, Nozomu Hatakeyama1, Akira Endou 1, Hiromitsu Takaba 1, Momoji Kubo 1, Carlos A. Del Carpio 1, Hiroshi Kajiyama 2, Tustae Shinoda 2, Akira Miyamoto 1, 3
		Lunch 12:00〜13:00
5p-L-　/ III
	1	JJAP Paper Award Monolithic Implementation of Elemental Devices for Optoelectronic Integrated Circuit in Lattice-Matched Si/III-V-N Alloy Layers	Toyohashi University of Technology　Yuzo Furukawa, Hiroo Yonezu, Yuji Morisaki, Soo-Young Moon, Seigi Ishiji and Akihiro Wakahara
	2	Young Scientist Award for the Presentation of an Excellent Paper Detection of Biomolecules by Flowcytometer Using Fluorescent YAG:Ce3+ Nanophosphors Composite Beads	Keio Univ. 1,IPU 2,Furukawa Electric CO., LTD. 3　*Kusayama Ikumi 1,Asakura Ryo 1,Saito Daisuke 1,Isobe Tetsuhiko 1,Kurokawa Kiyoshi 2,Aizawa Hideki 3,Takagi Tomohiro 3,Hirayama Yosuke 3,Ohkubo Michio 3
	3	Preparation of BaSi2O5:Eu2+ glass ceramic phosphors and luminescent properties	Kyoto Univ.　*Takayuki Nakanishi 1, Setsuhisa Tanabe 1
△	4	Substrate Effect on Excimer Laser Assisted Metal Organic Deposition Process for Phosphor Oxide Thin Films	AIST 1　*Nakajima Tomohiko 1, Tsuchiya Tetsuo 1, Kumagai Toshiya 1
	5	Liquid phase synthesis of single phase ZnAl2O4:Mn phosphor by citric acid gel method	Res. Inst. Electron. , Shizuoka Univ. 1　*Toshiki Nagura 1, Hiroko Kominami 1, Yoichiro Nakanishi 1, Kazuhiko Hara 1
	6	Luminescent properties of Eu2+-activated alkaline-earth halosilicate phosphors under near-UV- to blue-light excitation II	Tokyo Kagaku Kenkyusho Co. Ltd. 1　*Okamoto Shinji 1
	7	Photo- and cathodoluminescent properties of MgAl2O4:Eu phosphor	Research Inst. of Electronics, Shizuoka Univ. 1　Takano Naoju 1, Kominami Hiroko 1, Nakanishi Yoichiro 1, Hara Kazuhiko 1
	8	Development of Deep Ultraviolet Field Emission Devices	Kobe Univ. 1　*Kishimoto Atsunori 1, Kita Takashi 1, Wada Osamu 1
	9	Preparation and Luminescent Characteristics of BaGd4Si3O13:Tb,F Green PDP Phosphors	Tottori Univ. 1,Tokushima Bunri Univ. 2　*Kobayashi Atsushi 1,Kunimoto Takashi 2,Orita Shinya 1,Nakashima Yasuhiro 1,Ohmi Koutoku 1
		Break 15:30〜15:45
▲	10	Luminescence of AlON green phosphors	Natl. Inst. Mater. Sci.　*Rong-Jun Xie, Naoto Hirosaki
▲	11	Structural and Photoluminescence Properties of CaSiN2:Ce3+,Li+	NIMS　*Y.Q. Li 1, N. Hirosaki, R.-J. Xie
	12	Luminescence Properties of SrSi6N8:Eu	Showa Denko KK. 1,NIMS. 2　Kousuke Shioi 1,Naoto Hirosaki 2
	13	Cathodoluminescence Properties of AlN:Eu Blue Phosphor	NIMS 1, Futaba corporation 2　*Kazuo Inoue 1, Naoto Hirosaki 1, Rong-Jun Xie 1, Takashi Sekiguchi 1, Benjamin Dierre 1, Kiyoshi Tamura 2
	14	New green phosphor for white LED: synthesis, crystal structure, and optical properties (I)	Mitsubishi Chemical Gr. Sci. Tech. Res. Ctr, Inc.　*Shimooka Satoshi 1, Uheda Kyouta 1, Mikami Masayoshi 1, Imura Hiroyuki 1, Kijima Naoto 1
	15	New green phosphor for white LED: synthesis, crystal structure, and optical properties(II)	Mitsubishi Chemical Gr. Sci. Tech. Res. Cntr. 1　Masayoshi Mikami 1, Kyota Uheda 1, Satoshi Shimooka 1, Hiroyuki Imura 1, Naoto Kijima 1
	16	Changes of luminescence properties with Ca fraction in a long-persistent phosphor, Ca2Si5N8:Eu,Tm	Tokyo Univ. of Tech. 1　*Kato Hikaru 1,Honnna Yuya 1,Miyamoto Yoshinobu 1,Yamamoto Hajime 1
	17	Mechanism of long-persistent luminescence investigated by Eu,Tm concentration dependence in Ca2Si5N8:Eu,Tm	Tokyo Univ. of Tech.　*Miyamoto Yoshinobu 1, Kato Hikaru 1, Honna Yuya 1, Yamamoto Hajime 1
	18	A Computational Study on Effects of Oxygen Contamination in Red Phosphor Sr2Si5N8:Eu2+ on Its Electronic Structure	Dept. Appl. Chem., Tohoku Univ. 1, NICHe, Tohoku Univ. 2　Hiroaki Onuma 1, Riadh Sahnoun 1, Michihisa Koyama 1, Hideyuki Tsuboi 1,Nozomu Hatakeyama1, Akira Endou 1, Hiromitsu Takaba 1, Momoji Kubo 1, Carlos A. Del Carpio 1, Akira Miyamoto 1, 2
12.5 Optoelectric Properties and Devices
September 6 9:00〜18:00
6a-L-　/ III
	1	Two-Photon-Absorption of Si-APD and Its Application to Optical Measurement	Shonan Institute of Technology　Toshiaki Kagawa
	2	Temporal response of an MSM-configured oxidized-SiGe-based near-surface photodetector/modulator in the near-infrared.	Graduate school of Arts and Sciences, The university of Tokyo. 1　*Jun Igarashi 1, Kiyoshi Kawamoto 1, S. Fukatsu 1
	3	Extended excitonic lifetimes due to real space transfer of electrons in type-II Si1-xGex/Si(001)pseudomorphic quantum wells	Graduate School of Arts and Sciences, The University of Tokyo　*Terada Yosuke 1, Yasuhara Nozomu 1, Nakajima Noriko 1, Kawamoto Kiyoshi 1, Fukatsu Susumu 1
	4	Photoluminescence study of the isoelectronic Be-pair structure in Si	Keio Univ. 1　*Yoshizawa Kei 1, Toyofumi Ishikawa 1, Takeharu Sekiguchi 1, Kohei M. Itoh 1
	5	Host isotope effect on the photoluminescence spectra of the isoelectronic Be-pair center in Si	Keio Univ. 1　*Takeharu Sekiguchi 1, Kei Yoshizawa 1, Toyofumi Ishikawa 1, Kohei M. Itoh 1
△	6	Analysis of luminescence decay curves of semiconductor nanocrystals by maximum entropy method	The Graduate School of Sci. and Tech. 1, Faculty of Eng. 2　*Masaki Inui 1, Minoru Fujii 2, Shinji Hayashi 1,2
		Break 10:45〜11:00
	7	Photoluminescence Property of a-SiNH nanoball film fabricated in N2 gas Plasma	Waseda Univ. 1　*Nakamura Motohiko 1,Sakamoto Hajime 1,Katou Isamu 1
	8	Photoluminescence from a-Si:H Nanoball-films Fabricated in Spatial After Glow Plasmas.	Waseda Univ.　*Tachibana Taishi 1, Sakamoto Hazime 1, Kato Isamu 1
▲	9	Polarization memory of blue and red luminescence from nanocrystalline porous silicon treated by high-pressure water vapor annealing	Tokyo Univ. of Agri. and Tech. 1, Hyogo Univ. of Teacher Education 2　Gelloz Bernard 1, Koyama Hideki 2, Koshida Nobuyoshi 1
	10	Sensitized generation of singlet oxygen mediated by organic dye physorbed porous silicon	The Graduate School of Sci. and Tec.1, Graduate School of Eng.2 Kobe Univ.　Hirokazu Fumon 1, Minoru Fujii 2, Shinji Hayashi 2
	11	Photoluminescence property in pure water of carbon-terminated nanocrystalline silicon particles	Tokyo Denki Univ. 1, Quantum Beam Center NIMS 2　Masaki Hiruoka 1, *Keisuke Sato 1,2, Kenji Hirakuri 1
△	12	Cross section analysis of light emitting device using silicon nanocrystal quantum dots and discussion about effect of thin nitride layer	Tokyo Tech, QNERC 1, Southampton Univ. and Tokyo Tech 2, SORST-JST 3　* Cheong Heajeong 1, Kurihara Tomoyuki 1, Tanaka Atsushi 1, Usami Kouichi 1, Tsuchiya Yoshishige 1, 3 Mizuta Hiroshi 2, 3 and Oda Shunri 1, 3
		Lunch 12:30〜13:30
6p-L-　/ III
	1	Improvement in characterization technique of bulk multicrystalline Si using X-ray diffraction	IMR Tohoku Univ. 1, Bruker AXS 2 　*Kutsukake Kentaro 1, Usami Noritaka 1, Fujiwara Kozo 1, Saito Keisuke 2, Nakajima Kazuo 1
	2	Growth of Si thin film by LPE growth method using Si melt	Tohoku Univ. 1, Kyoto Univ. 2　*Kodama Hitoshi 1,Kutsukake Kentaro 1,Wang Zengmei 1,Usami Noritaka 1,Fujiwara Kozo 1,Nose Yoshitaro 2,Nakajima Kazuo 1
△	3	Evaluation of polycrystalline silicon substrates for solar-cells by Raman spectroscopy(2)	Meiji Univ. 1,Toyota Tech. Inst. 2,ISAS/JAXA 3　*Tanaka Satoshi 1,Imai Keita 1,Ogura Atsushi 1,Ohshita Yoshio 2, Arafune Koji 2,Kawai Hideaki 2,Tajima Michio 3,Inoue Masaaki 3
△	4	Photoluminescence Characterization of N-Type Multicrystalline Silicon Wafers for Solar Cells	ISAS/JAXA 1, Tokyo Univ. 2, Dai-ichi Kiden Co. 3, Tokyo Univ. of Agri. & Tech. 4　*Sugimoto Hiroki 1,2, Tajima Michio 1,2, Yamaga Isao 3, Dharmrin Marwan 4, Kamisako Koichi 4, Saitoh Tadashi 4
	5	3D global analysis in a unidirectional solidification process for multicrystalline silicon for photovoltaic	Kyushu University 1, RIAM, kyushu university 2　*Hiroaki Miyazawa 1, Lijun Liu 2, Koichi Kakimoto 2
	6	Analysis of oxygen incorporation in unidirectional solidified multicrystalline silicon for solar cells	Kyushu University 1,RIAM, Kyushu University 2,Toyota Technological Institute 3　　*Hitoshi Matsuo 1, R. Bairava Ganesh 2, Satoshi Nakano 2,Lijun Liu 2, Yoshihiro Kangawa 1,2,Koji Arafune 3,Yoshio Ohshita 3, Masafumi Yamaguchi 3,Koichi Kakimoto 1,2
	7	Effect of phosphorus gettering in high quality Silicon bulk polycrystalline grown by Float casting method	IMR Tohoku Univ. 1, Kyoto Univ. 2　*Takahashi Isao 1, Usami Noritaka 1, Yokoyama Ryusuke 1, Nose Yoshitaro 2, Fujiwara Kozo 1, Nakajima Kazuo 1
△	8	Temperature Dependence of Dislocation-Related Photoluminescence in Multicrystalline Silicon Wafers	ISAS/JAXA 1,Meiji Univ. 2,Tokyo Univ. 3,Toyota Tech Inst. 4 　*Inoue Masaaki 1,2,Sugimoto Hiroki 1,3,Tajima Michio 1,Ohshita Yoshio 4,Ogura Atsushi 2
		Break 15:30〜15:45
	9	Effect of grain boundary on metal distribution in polycrystalline silicon for solar cells	Toyota Tech.　Int. 1　*H. Kawai 1, K. Arafune 1, Y. Ohshita 1, M. Yamaguchi 1
	10	Effect of irradiation conditions on radiation degradation of space solar cells	AES 1,JAXA 2,JAEA 3,WERC 4　Saito Masashi,*Imaizumi Mituru,Ohshima Takeshi,Ito Yoshifumi
	11	Characterization of conversion efficiency of solar cells by the local photo-voltage measurement method	ISIR, Osaka Univ. 1　Shishido Takeru 1, Takahashi Masao 1, Liu Yueh-Ling 1, Iwasa Hitoo 1, Kobayashi Hikaru 1
	12	p++ layers as back surface field in p-type cast-crystalline silicon solar cells	Tokyo Tech. 1, QNERC 2, Mitsubishi Electric Co., Ltd. 3 　*Sugiura Tsutomu 1, Limmanee Amornrat 1, Sato Takehiko 3, Yamamoto Hiroshi 1, Yamada Akira 2, Konagai Makoto 1
	13	Heat treatment effects on surface reflection of chlorine-trifloride-textured single crystalline silicon	Seikei Univ. 1　Hideyuki Sano 1, Shohei Narita 1, Tadashi Momma 1, *Yoji Saito 1
	14	Formation of Antireflection Subwavelength Structure of Silicon Surface Using Catalysis of Gold Single Nano Particles	Jpn. Adv. Inst. of Sci. and Tech. 1　*Kensuke Nishioka 1, Susumu Horita 1
	15	Characterization of carrier recombination in lattice-mismatched InGaAs solar cells on GaAs substrates	Toyota Technological Institute 1, National Renewable Energy Laboratory 2 　T. Sasaki 1, K. Arafune 1 , M. Al-Jassim 2 , Y. Ohshita 1, M. Yamaguchi 1
	16	Passivation Effect of a-Si:H Film for Crystalline Silicon Substrate	TUAT　*Maeda Shuhei, Suzuki Yuji, Dhamrin Marwan, Suda Masanori, Kamisako Koichi
	17	Influence of a-Si:H Film on BSF Layer of Crystal Silicon Solar Cell	Tokyo Univ. of Agri. & Tech. 1. Tokyo Univ. of Agri. & Tech. 1. Tokyo Univ. of Agri. & Tech. 1. Tokyo Univ. of Agri. & Tech. 1. 　*Fukaya Hidefusa 1, Jeon Minsung 1, Dhamrin Marwan 1, Kamisako Koichi 1
12.5 Optoelectric Properties and Devices
September 7 9:15〜17:20
7a-L-　/ III
	1	Temperature dependence of inter-band optical transitions in TlInS2	Osaka Pref. Univ. 1, Chiba Inst. Univ. 2, Nat. Acad. Sci. of Azerbaijan 3　* Tashiro Ryo 1, Shim Yonggu 1, Okada Wataru 1, Wakita Kazuki 2, Mamedov Nazim 3
	2	Band dispersion of TlInSe2 by angle-resolved photoemission spectroscopy	Osaka Pref. Univ. 1, Chiba Inst. Tech. 2, HSRC Hiroshima Univ. 3, Azerbaijan Nation. Acad. Sci. 4　*Kouji Abe 1, Yonggu Shim 1, Kojiro Mimura 1, Kazuki Wakita 2, Masashi Arita 3, Yukihiro Taguchi 1, Kouichi Ichikawa 1, Hirofumi Namatame 3, Masaki Taniguchi 3, Guseyn Ordozhev 4, Nazim Mamedov 4
	3	Single Crystallization of Microwave-Synthesized AgGaSe2 by Bridgman Method (II)	Osaka Pref. College of Technology　1　Susaki Masami 1, Maeda Atsushi 2
	4	Preparation and Characterization of ZnS Thin Films for the Buffer Layer of CIGS Solar Cells Prepared by CBD Technique (III)	Tokyo Univ. of Science 1　*Iwashita Taisuke 1,Oie Hiroyuki 1,Ando Shizutoshi 1
	5	Preparation of SnS by vapor phase deposition	Tokyo Univ. of Science 1　*Miyauchi Keisuke 1,Minemura Takehiro 1,Nakatani Keigo 1,Sugiyama Mutsumi 1,Nakanishi Hisayuki
		Break 10:30〜10:45
	6	Fabrication of SnS by the chemical bath deposition method and application to heterojunction solar sells	Nagoya Institute of Technology　*M.Maeda, M.Ichimura
	7	Preparation of Cu2ZnSnS4 thin films by sulfurization from precursor including oxide compound	Wakayama Coll.Tech. 1, Wakayama Ind.Tech.Cen. 2　Yamaguchi Toshiyuki 1, Kubo Takashi 1, Maeda Kazuya 1, Wakano Ken-ichiro 1, Niiyama Shigetoshi 2, Imanishi Toshihito 2
	8	Drying Temperature Dependence of Cu2ZnSnS4 Thin Films Deposited by Sol-Gel Sulfurizing Method	Nagaoka Univ. Tech.　*Moritake noriko 1, Tanaka Kunihiko 1, Oonuki Masatoshi 1, Uchiki Hisao 1
	9	Fabrication of Three-Dimensional Solar Cell used Cu2ZnSnS4 Prepared by Photo Chemical Deposition.	Nagaoka Univ. of Tech. 1　*Katsuhiko Moriya 1, Saeki Yusuke 1, Kunihiko Tanaka 1, Hisao Uchiki 1
△	10	Multi-scale simulation of dye-sensitized TiO2 porous electrode based on quantum chemical calculation	Dept. Appl. Chem., Tohoku Univ. 1, NICHe, Tohoku Univ. 2　Kei Ogiya 1, Chen Lv 1, Riadh Sahnoun 1, Michihisa Koyama 1, Hideyuki Tsuboi 1, Nozomu Hatakeyama 1, Akira Endou 1, Hiromitsu Takaba 1,Momoji Kubo 1,Carlos A. Del Carpio 1, Akira Miyamoto 1, 2
		Lunch 12:00〜13:20
7p-L-　/ III
	1	Synthesis of porous CuInS2 crystals grown from polyol materials (II)	Miyakonojo Coll. Tech. 1, Kumamoto Univ. 2　*Akaki Yoji 1, Ohno Yuki 1, Momiki Takanori 2, Ide Kazuki 2
	2	Properties of excitonic emissions on CuInS2 grown by the Hot-Press method	Osaka Prefecture Univ. 1, Chiba Institute of Technology 2, Miyazaki Univ. 3　Kishigui Kaoru 1, Shim Yongu 1, Wakita Kazuki 2, Yoshino Kenzi 3
	3	Satellite milled CIGS powders evaluated by Photoacoustic spectroscopy	Dept. of MSE, NDA　*Miyazaki Hisashi1, Kubori Masashi1, Okamoto Youichi1, Morimoto Jun1
	4	Growth of Cu(In,Al)Se2 thin films by selenization using diethylselenide	Tokyo Univ. of Science 1, IMRAM, Tohoku Univ. 2　*Umezawa Akihisa 1,Miyama Atsushi 1,Yasuniwa Toshihiro 1,Nakanishi Hisayuki 1,Sugiyama Mutsumi 1,Chichibu Shigefusa 2,
	5	Preparation of Cu(In,Ga)(S,Se)2 thin films by vapor deposition from ternary compounds (II)	Wakayama Coll.Tech. 1, Wakayama Ind.Tech.Cen. 2　Yamaguchi Toshiyuki 1, Taniguchi Yoshihiro 1, Numata Kazuya 1, Niiyama Shigetoshi 2, Imanishi Toshihito 2
	6	Growth of Cu(In1-xGax)Se2 thin films using cracked selenium	Tokyo Inst. of Tech. 1, QNERC 2　*Kawamura Masahiro 1, Nakashiba Tetuya 1, Chiba Yoshiyuki 1, Yamada Akira 2, Konagai Makoto 1
	7	Evaluation of Photoluminescence Measurement of Cu(InGa)Se2 Thin Films Prepared by Mechanochemical Process	Tokyo Tech. 1, QNERC 2, Ryukoku Univ. 3　*Chiba Yoshiyuki 1, Yamada Akira 2, Konagai Makoto 1, Wada Takahiro 3
	8	Characterization of CIGS solar cells by time-resolved photoluminescence method (III)	Ehime Univ. 1,Aoyama Gakuin Univ. 2 　*Ohkubo Katsuhiko 1, Morisada Tatsushi 1, Miyata Akira 1, Shirakata Shyo 1, Ishii Yasuyuki 2, Nakada Tokio 2
		Break 15:05〜15:20
	9	Characterization of electron structure and chemical bond nature at the interface between CBD-CdS and CIGS grown by H2O-introduced co-evaporation	Kagoshima Univ. 1, AIST 2　*Kashiwabara Hirotake 1, Teshima Shimpei 1, Masamoto Keimei 1, Obara Kozou 1, Okuda Tetsuji 1, Ishizuka Shogo 2, Sakurai Keiichiro 2, Yamada Akimasa 2, Matsubara Koji 2, Niki Shigeru 2, Terada Norio 1,2
	10	Effect of the surface morphology of Mo back contact on the cell performance of CIGS devices	Aoyama Gakuin Univ. 1　Morimoto Takuya 1, Mise Takahiro 1, Nakada Tokio 1
	11	High Quality CIGS Thin Films and Devices by Photo-Excited Deposition Process (II)	Dept. of Electrical Engineering and Electronics, Aoyama Gakuin Univ.　*Y. Ishii, J. Hirata, T. Mise and T. Nakada
△	12	Fabrication of Pentanary Cu(InGa)(SeS)2 Absorbers by Selenization and Sulfurization	Showa Shell Sekiyu K.K 1　*Goushi Yuri 1, Hakuma Hideki 1, Tabuchi Katsuya 1, Kushiya Katsumi 1
	13	Influence of Proton Irradiation Temperature on the Degradation of GaAs Solar Cells	UEC 1. JAEA 2. JAXA 3　*Miyamoto Haruki 1, 2. Sato Shin-ichiro 2. Morioka Chiharu 3. Imaizumi Mitsuru 3. Ohshima Takeshi 2. Kawano Katsuyasu 1
	14	Radiation Degradation Modeling of InGaP/GaAs/Ge Triple Junction Solar Cells for Space Use	JAEA 1, JAXA 2, UEC 3　*Sato Shin-ichiro 1, Miyamoto Haruki 1,3, Imaizumi Mitsuru 2, Shimazaki Kazunori 2, Morioka Chiharu 2, Kawano Katsuyasu 2, Ohshima Takeshi 1,
	15	Optical Properties of AlInGaP Single Junction Solar Cell	JAXA 1, JAEA 2　*Chiharu Morioka 1, Hiroki Sugimoto 1, Sin-ichiro Sato 2, Mitsuru Imaizumi 1, Takeshi Ohshima 2, Michio Tajima 1, Koichi Kibe 1
12.5 Optoelectric Properties and Devices
September 8 9:00〜15:00
8a-L-　/ III
	1	Temperature dependence of optical anisotropy in impurity-doped TlInS2	Osaka Pref. Univ. 1, Chiba Inst. Tech. 2, Nat. Acad. Sci of Azerbaijan 3　*Nishimoto Yuichiro 1, Shim Yonggu 1, Wakita Kazuki 2, Mamedov Nazim 3
	2	Crystal growth of AgInSe2 bulk crystals grown by Hot-Press Method	Univ. Miyazaki, Chiba Inst. Tech.　*Shirahata Yasuhiro 1, Kinoshita Aya 1, Oshima Minoru 1, Yoshino Kenji 1, Ikari Tetsuo 1, Wakita Kazuki 2
	3	Measurements of characteristic by Ag/Ga change in AgGaSe2 bulk crystals.	Miyazaki Univ. 1, Kyusyu Univ. 2, Ishikawa National Coll. Tech. 3　*Kinoshita Aya 1, Yoshino Kenji 1, Ikari Tetsuo 1, Matsuo Hitoshi 2, Kakimoto Koichi 2, Seto Satoru 3
	4	Optical properties of Sn-doped CaAl2S4	Nagaoka Univ. Tech. 1　*Ohta Hitoshi 1, Tanaka Kunihiko 1, Uchiki Hisao 1
	5	Characterization of sputtered EuGa2S4 thin films for laser application II	Takuma National College of Technology 1, Shizuoka Inst. of Science and Technology 2　Masakazu YAGI 1, Masahiro UEHARA 1, Minoru DOHI 2 and Seishi IIDA 2
		Break 10:15〜10:30
	6	Characterization of EuGa2S4 Thin films Prepared by Pulsed Laser Deposition	Nagaoka Univ.Tech. 　Kaneta Ryohei 1,Tanaka Kunihiko 1,Uchiki Hisao 1
	7	Enhancement of Mn red emission by rare earth element activators in SrGa2S4 compounds	Nihon Univ. 1　*Hidaka Chiharu 1, Obonai Toshimitu 1, Takizawa Takeo 1
	8	Enhancement of Mn red emission in CaGa2S4 compounds by co-doping rare earth elements	ENSCP 1, Nihon Univ. 2　Boitier Fabien 1, Hidaka Chiharu 2, Takizawa Takeo 2
	9	Electronic states of Mn in SrGa2S4	Tokyo Univ. Sci. 1, Nihon Univ. 2, Seikei Univ. 3　*Nomura Shigetaka 1,Takizawa Takeo 2,Kai Munenori 3
	10	Improvement in PL temperature dependence of CuAlS2:Mn red phosphor by Si doping	Tottori Univ.　*Tsuji Kazuaki ,Ohmi Koutoku
	11	Luminescent properties of rare-earth ion activated (Ba1-xSrx)2ZnS3 phosphors	Tottori Univ.1　*Sasaki Taichi 1,Ohashi Takayuki 1,Ohmi Koutoku 1
		Lunch 12:00〜13:00
8p-L-　/ III
	1	Effects on AlF3-doping during the deposition of BaAl2S4:Eu thin-film phosphors	Meiji Univ. 1　*Asai Hidefumi 1, Miura Noboru 1, Matsumoto Hironaga 1, Nakano Ryotaro 1
	2	Local structure of Ba and doped Eu in Inorganic Electroluminescent Thin Film BaAl2S4:Eu studied by XAFS	JASRI 1, NHK Sci. & Tech. Res. Labs. 2, School of Sci. & Tech., Meiji Univ. 3　Honma Tetsuo 1, Okamoto Shinji 2, Tanaka Katsu 2, Guo Runhong 3, Miura Noboru 3
	3	Effects on GdF3 co-doping for BaAl2S4:Eu blue-emitting phosphors.	School of Sci. & Tech., Meiji Univ.　*X.S. Yan 1, R.H. Guo 1, N. Miura 1, H. Matsumoto 1, and R. Nakano 1
	4	Influence of thickness of phosphor layer in electrical property of distributed-type inorganic EL panel	Tokyo polytechnic Univ.　Tabata Yasuyuki 1, *Satoh Toshifumi 1
	5	Influence of thickness of dielectric layer in electrical property of distributed-type inorganic EL panel	Tokyo polytechnic Univ.　Kobayashi Makoto 1, Tabata Yasuyuki 1, *Satoh Toshifumi 1
	6	Influence of Curie point of BaTiO3 in luminosity of distributed-type inorganic EL	Tokyo polytechnic Univ.　Kojima Hiroki 1, *Satoh Toshifumi 1
	7	Electroluminescence from ZnS D-A Pair Type Phosphors Doped with III-V Compounds (3)	Meiji Univ. 1　*Takeyasu Yuji 1,Miura Noboru 1,Matsumoto Hironaga 1,Nakano Ryotaro 1
	8	Discussion on high-luminance ZnS Phosphor for electroluminescent devices	Meiji Univ. 1　*Miura Noboru 1,Takeyasu yuji 1,Matsumoto Hironaga 1,Nakano ryotaro 1