6 This Films·Surfaces
6.1 Ferroelectric Films
August 30 (Wed.) 9:30〜19:00
30a-V-　/ II
	1	Optical properties of epitaxial Pb(Mg1/3, Nb2/3)O3-Pb(Zr, Ti)O3 thin film fabricated by a sol-gel method	Fujitsu Limited 1, Optoelectronic Industry and Technology Development Association 2, Fujitsu Laboratories Ltd. 3　*Masatoshi Ishii 123, Keisuke Satoh 123, Masao Kondo 3, Kazuaki Kurihara 3
	2	Electrical and Electromechanical Properties of PMN-PNN-PZT Thin Films.	Shonan Inst. Tech. 1, INOSTEK inc. 2　*Maiwa Hiroshi 1, Kim Seung-Hyun 2
	3	Effect of the state of ablated species on the epitaxially grown Y2O3/Si interface	Osaka Pref. Univ. 1　*Nishijima Masanori 1,Yoshimura Takessi 1,Fujimura Norifumi 1
	4	Effect of Nitrogen addition in high-k buffer layer for MFIS structure by metal deposition followed by O2 annealing	Tokyo Univ. of Agri. & Tech.　*Kikuchi Shunsuke 1, Hasumi Masahiko 1, Iwazaki Yoshitaka 1, Ueno Tomo 1, Kuroiwa Kouichi 1
	5	Preparation of Pt electrode on high-k dielectric thin film by laser lift-off technique	Grad. School of Natural Sci. & Tech. Kanazawa Univ. 1,Fac of Eng. Kanazawa Univ. 2,Ishikawa-nct. 3　Norichi Takahiro 1,Hyun Gyungsu 2,Ohtsubo Shigeru 3,Kawae Takeshi 1,Morimoto Akiharu 1,Kumeda Minoru 1
	6	Fabrication and characterization of novel Pb-free (Ba,Sr)(Zr,Ti)O3 thin films on SrRuO3 electrode by PLA method	Grad.School of Natural Sci.& Tech. Kanazawa Univ. 1,Ishikawa NCT　*Nishimura Keisuke 1, Shiomoto Mitsuhiro 1, Kawae Takeshi 1,Yamada Satoru 2,Morimoto Akiharu 1, Kumeda Minoru 1
		Break 11:00〜11:15
	7	Tunability Change with The Srain from Substrate in (100) One-axis Oriented (Ba0.5Sr0.5)TiO3 Thin Films	1Dep. Innov. Eng. Mater., Tokyo Tech.1,　Gennum Corp.2　　Sinichi Ito1, Ivo Koutsaroff2、and ○Hiroshi Funakubo1
	8	High frequency tunable characteristics of CPW structure with RF-sputtered BST thin film on MgO substrate	Osaka Univ. 1, Dept. Innov., Tokyo Inst. Of Tech 2　*Minoru Noda 1, Shin-ichi Ito 2, Daniel Popovici 1, Masanori Okuyama 1, Hiroshi Funakubo 2
	9	Structure and Electrical Properties of Double-Alkoxy-Derived 1 Micro-Meter Thick BaTiO3 Films on LaNiO3 Nucleation Layers	National Inst. of Adv. Ind. Sci. Tech. 1, Nagoya Inst. of Tech. 2　Kazumi Kato 1,2, Shingo Kayukawa 2, Kiyotaka Tanaka 2, Yiping Guo 1, Kazuyuki Suzuki 1, Yoshitake Masuda 1, Tatsuo Kimura 1, Kaori Nishizawa 1, Takeshi Miki 1
	10	Grazing incidence x-ray diffraction study on crystal structure of BiFeO3 thin films.	Bruker AXS 1, Dep.Innov.Eng.Mater.Tokyo Tech. 2　Keisuke Saito 1, Toshiyuki Kurosawa 1, Sadao Ueki 1, Hiroshi Funakubo 2
▲	11	First-principles study of charged defects influence on spontaneous polarization of BiFeO3 thin films	Osaka Univ. 1　*Dan Ricinschi 1, Masanori Okuyama 1
		Lunch 12:30〜13:30
30p-V-　/ II
	1
	2	Synthesis and properties of magnetoferroelectric BiFeO3 ultra thin films	Sophia Univ. 1,Kyoto Univ. 2　*M.Arai 1,N.Ichikawa 1,Y.Imai 1,A.Tanokura 1,H.Sakama 1,M.Azuma 2,Y.Shimakawa 2 and M.Takano 2
	3	Preparation of stress-free BiFeO3 thin films on membrane structure	Osaka Univ. 1　*Nakashima Seiji 1,Yun Kwi-Young 1,Nakamura Yoshitaka 1,Okuyama Masanori 1
△	4	Fabrication and characterization of multiferroic Bi2NiMnO6 thin films	ICR,Kyoto Univ. 1　*Sakai Maiko 1,Kan Daisuke 1,Azuma Masaki 1,Takano Mikio 1,Shimakawa Yuichi 1
	5	Magnetic and dielectric properties of new multiferroic R3Fe5O12 (R=rare metal) thin films	ISIR Osaka Univ. 1　*Tsuruta Kouji 1,Koide Takushi 1,Seki Munetoshi 1,Tabata Hitoshi 1
	6	Magnetic and dielectric properties of new multiferroic Lu3Fe5O12 thin films: Toward new multiferroic materials	Osaka Univ　Koide Takushi
	7	Effect of Bi substitution on Ferromagnetic and Dielectric Properties of Ba(Co,Zr)O3 Thin Films	Osaka Prefecture Univ. 1　*Matsui Toshiyuki 1, Daido Satoru 1, Fujimura Norifumi 1, Yoshimura Takeshi 1, Tsuda Hiroshi 1, Morii Kenji 1
	8	Magnetic Properties of Ferroelectric YbMnO3 Epitaxial Thin Films (II)	Graduate School of Engineering Osaka Prefecture Univ.　*Takahashi tetsuya 1. Yoshimura Takeshi 1. Fujimura Norifumi 1.
	9	Raman Scattering study on multiferroic YMnO3 thin films	Kyoto Inst. Tech. 1 , Wakayama Univ. 2, Osaka Prefecture Univ. 3 　*Fukumura Hideo 1, Satoshi Matsui 1, Kenji Kisoda 2, Tetsuya Takahashi 3, Takeshi Yoshimura 3, Norifumi Fujimura 3
	10	Improvement of the dielectric property of magnetoferroelectric YMnO3 epitaxial thin film and the magnetic and dielectric properties	Graduate School of Engineering, Osaka Prefecture Univ.　1.　*Maeda Kazuhiro 1. Yoshimura Takeshi 1. Fujimura Norifumi 1.
		Break 16:15〜16:30
	11	Demonstration of high-density digital data recording using ferroelectric medium	Corporate R&D Lab. Pioneer 1,RIEC Tohoku Univ. 2　*Fujimoto Kenjiro 1,Maeda Takanori 1,Onoe Atsushi 1,Cho Yasuo 2
	12	Preparation and Evaluation of Ferroelectric Single-Crystal Recording Media with Large Area for Probe Memory	R.I.E.C., Tohoku Univ.　*Yoshiomi Hiranaga 1, Yasuo Cho 1
△	13	Cross-sectional observation of nano-domain dots formed in ferroelectric medium	R.I.E.C. Tohoku Univ. 1　*Daimon Yasuhiro 1, Cho Yasuo 1
△	14	Fabrication of Nano Scale Periodically Poled Lithum Tantalite	RIEC.Tohoku Univ. 1　*Tanaka Kenkou 1,Cho Yasuo 1
△	15	Observation of three-dimensional domain structures in Bi4Ti3O12 crystals	RCAST, Univ. of Tokyo 1, SORST-JST 2　*Katayama Shinichi 1, Noguchi Yuji 1,2, Miyayama Masaru 1
	16	Epitaxial growth of ferroelectric NaNbO3 thin films on MgO substrate by Pulsed laser deposition	Ryukoku Univ1, Advanced Technology Research Laboratories, Matsushita Electric Ind. Co. Ltd. 2　Shinya Oda1,Takehisa Saito1,Takahiro Wada1,Hideaki Adachi2
	17	Effect of Sintering Conditions in Crystallinity of Alkoxy-derived (Na, K)NbO3 Thin Films	Nagoya Inst. of Tech. 1, AIST 2 　*Kiyotaka Tanaka 1, Ken-ichi Kakimoto 1, Hitoshi Ohsato 1, Takashi Iijima 2
△	18	Deposition of KNbO3-NaNbO3 thin films by rf magnetron sputtering	Kyoto Univ. 1　*Mino Takuya 1,Inoue Takashi 1,Kuwajima Shuichiro 1,Suzuki Takaaki 1,Kanno Isaku 1,Kotera Hidetoshi 1,Wasa Kiyotaka 1
	19	Preparation of Ir-based electrodes by Liquid-Delivery MOCVD	Univ. Hyogo 1, Tosoh Corp. 2, Sagami Chem. Res. Center 3　*Yamashita Daisuke 1, Fujisawa Hironori 1, Shimizu Masaru 1, Furukawa Taishi 2,3, Kawano Kazuhisa 2,3, Oshima Noriaki 2,3
	20	Characterization of Polyvinylidene fluoride thin fims by sol-gel method	University of Seoul1, Tokyo Institute of Technology2　Byung-Eun Park1, Hiroshi Ishiwara2
6.1 Ferroelectric Films
August 31 (Thu.) 9:30〜19:00
31a-V-　/ II
△	1	Epitaxial growth of Pt and Ir thin films on a SrTiO3(001) substrate	Univ.Hyogo 1, Fujitsu Lab. 2　*Masayoshi Kume 1, Hironori Fujisawa 1, Masaru Shimizu 1, Yasutoshi Kotaka 2, Kouichirou Honda 2
	2	Electric resistivity lowering by oxygen anneal of LaNiO3 thin films by liquid-delivery MOCVD method	Meisei Univ. 1, Toshima MFG Co.Ltd. 2　*Kanoko Toshiaki 1, Tasaki Yuzo 2, Yoshizawa Syuji 3
△	3	Total stress in the multilayer composed of LNO and PZT thin films	AIST　Takeshi Kobayashi 1,Toshihiko Noguchi1,Masaaki Ichiki1,Ryutaro Maeda 1
	4	Relative permittivity control of SBT thin film by silicate addition	Tokyo Institute of Technology IGSSE　Kouichi Saito 1, Hiroshi Ishiwara 1
	5	Optimization of the buffer Layer thickness in Pt/Sr0.8Bi2.2Ta2O9/HfO2/SiMFIS diode	Tokyo Institute of Technology IGSSE1, Fujitsu Laboratories Ltd2　Masashi Umeyama1, Kenji Maruyama2, Tetsuro Tamura2, Hiroshi Ishiwara1
	6	Electric characteristics of MFIS FET with HfSiON film as a buffer layer and SrBi2Ta2O9 ferroelectric film	Fujitsu Laboratories Ltd. 1,Tokyo Inst. of Technology IGSSE 2 　*Hiromasa Hoko 1,Yoshiaki Tabuchi 2,Kenji Maruyama 1,Hiroshi Ishiwara 2
		Break 11:00〜11:15
	7	Structure control of constituent oxide layers in (Y,Yb)MnO3/HfO2/Si	AIST 1　*Suzuki Kazuyuki 1, Nishizawa Kaori 1, Miki Takeshi 1, Kato Kazumi 1
	8	1T-type FET memory based on interface conduction of SBT-SiON	Graduate School of Eng.Sci.,Osaka Univ.1,　*Minami Takaaki 1,Lee Bong-Yeon 1,Kanashima Takeshi 1, Okuyama Masanori 1,
	9	Electrical characteristics of BLT/ITO TFTs fabricated with mechanical polishing	Tokyo Inst. of Tech. P&I Lab　Fujimura Tomofumi 1.Shin Etu 1.Tokumitu Eisuke 1
△	10	Fabrication of ferroelectric gate transistor with SrTi1-xRuxO3 thin film as a channel	Univ. Hyogo 1　*Yoshida Syuhei 1, Fujisawa Hironori 1, Shimizu Masaru 1
	11	Electrical characteristics of ferroelectric gate thin-film transistors based on Pb(Zr, Ti)O3/ZnO	Osaka Prefecture Univ. 1　Arai Ryota 1, Masuko Keiichiro 1, Yoshimura Takeshi 1, Ashida Atsushi 1, Fujimura Norifumi 1
		Lunch 12:30〜13:30
31p-V-　/ II
	1	Observation of ferroelectricity in ultrathin PbTiO3 films by scanning probe microscope.	Univ. Hyogo 1　*Yoshiyuki Takashima 1, Toru Horii 1, Hironori Fujisawa 1 and Masaru Shimizu 1
△	2	Stress relazation in lead titanate film having novel domain structure	Tokyo Tech. 1, Kochi Univ. Tech. 2, Bruker AXS K. K. 3　*Ikariyama Rikyu 1, Nakaki Hiroshi 1, Kim Yong Kwan 2, Nishida Ken 1,2, Saito Keisuke 3, Funakubo Hiroshi 1
△	3	Stress relaxation of epitaxial tetragonal lead zirconate titanate film grown by MOCVD	Tokyo Tech 1, Kochi Univ Tech 2, Bruker AXS 3　Nakaki Hiroshi 1, Kim Yong Kwan 1, Yokoyama Shintaro 1, Nishida Ken 1 2, Saito Keisuke 3, Funakubo Hiroshi 1
	4	Direct observation of domain formation in PTO thin film using in-situ Raman-CVD combination equipment	Kochi Univ. Tech.1, Tokyo Inst. Tech.2　Ken Nishida1, Hiroshi Funakubo2 and Takashi Katoda1
	5	Effect of buffer layer TiO2 of PZT Thin Films on Their Thermal Stimulated Current Properties	NAIST. 1　*Takeda Takashi 1,Nishida Takashi 1,Uchiyama Kiyoshi 1,Shiosaki Tadashi 1
△	6	Leakage Current Properties of Ferroelectric Pb(Zr,Ti)O3 Thin-film Capacitors with Rectangular Hysteresis Loops	Tokyo Univ. of Science 1　Tanimura Mitsumasa 1,Shima Hiromi 1,Okamura Soichiro 1
△	7	Stress control for PZT actuated cantilever	Taiyo Yuden Co., Ltd. 1, AIST 2　*Ryuichi Kondou 1, Kentaro Nakamura 1, Takeshi Kobayashi 2, Ryutaro Maeda 2
△	8	Ab initio study of strain effects on ferroelectricity at PbTiO3 surface	Kyoto Univ. 1　*Shimada Takahiro 1, Umeno Yoshitaka 1, Kitamura Takayuki 1
▲△	9	Highly Reproducible Preparation of (111)-oriented PZT Ferroelectric Capacitors Using (111)SrRuO3/(111)Pt/TiO2/SiO2/Si Bottom Electrode : MOCVD Deposition, Top Electrode Influence and Reliability	Dep. Innov. Eng. Mater., Tokyo Tech.1　*N. Menou1, Hiroki Kuwabara1 and Hiroshi Funakubo
	10	Preparation and Control for Crystal Orientation of PZT Thin films Deposited by MOCVD	ULVAC, Inc. 1　Takeshi Masuda 1, Masahiko Kajinuma 1, Yutaka Nishioka 1, Isao Kimura 1, Shin Kikuchi 1, Takakazu Yamada 1, Koukou Suu 1
	11	Effects of Methanol Treatments on PLZT Crystalinity Fabricated by Sol-gel Method	NAIST 1　*Takuya Kosaka 1, Atsushi Kasamatsu 1, Kiyoshi Uchiyama 1, Tadashi Shiosaki 1
		Break 16:15〜16:30
△	12	La-Content and Orientation Dependence of Electrooptic Properties in Polycrystalline (Pb,La)(Zr0.65,Ti0.35)O3 Films	Tokyo Univ. of Science　*Hiromi Shima,Hiroshi Naganuma,Soichiro Okamura
	13	Scanning speed-depecdence in Crystallization of Ferroelectric Thin Films using Continuous-Wave Laser	Tohoku Univ. 1　Tago Kiichiro 1, Kuroki Sin-ichiro 1, Kotani Koji 1, Ito Takashi 1
	14	A Investigation on Voltage shift in Hysteresis loops of Ferroelectric Pb(Zr,Ti)O3 Thin-film Capacitors	Tokyo University of Science 1　*Okamura Soichiro 1, Kasamatsu Terutoki 1, Shima Hiromi 1
	15	Fatigue phenomenon of Pt/(Bi,Nd)4Ti3O12/Pt capacitor at low-electric field	Tokyo Inst. of Tech. IGSSE 1, Fujitsu Labs 2, AIST 3　Tabuchi Yoshiaki 1, Hasegawa Satoshi 1, Tamura Teturo 2, Hoko Hiromasa 2, Kato Kazumi 3, Arimoto Yoshihiro 2, Ishiwara Hiroshi 1
	16	Hydrothermal synthesis of Bismuth titanate	Graduate school of Eng. Sci., Osaka Univ.　*Inoue Akihiro 1,Noda Minoru 1,Okuyama Masanori 1
	17	Relationship between local crystal structure, properties and ferroelectric performances of Bi-Si-O added Sr-Ce-Bi-Ta-O system	Tokyo Univ. of Science 1　*Taniyama Satoshi 1, Idemoto Yasushi 1, Koura Nobuyuki 1
	18	Structural Observation of Bi4Ti3O12 Thin Films using X-ray Reciprocal-lattice Space Imaging	JASRI/SPring-8 1, Tokyo Inst. Tech. 2　Sakata Osami 1, Watanabe Takayuki 2, Funakubo Hiroshi 2
	19	Change in the Bonding States in Bi4-xLaxTi3O12 Thin Films by Post-Annealing	Fukuoka Univ. 1　* Kohno Atsushi 1, Tajiri Takayuki 1
	20	Relationship between ferroelectric properties and crystal structure of Bi4Si3O12 added (Bi,Sm)4Ti3O12-δ	Tokyo Univ. of Science 1　Idemoto Yasushi 1, *Ito Taichi 1,Koura Nobuyuki 1
	21	Luminescent properties of rare-earth doped ferroelectric bismuth-layer oxide films	Kanazawa Inst. of Tech. 1　*Koji Aizawa 1
6.2 Carbon Films
August 29 (Tue.) 9:15〜18:00
29a-W-　/ II
	1	Preparation Condition of Hot-Filament CVD Diamond and Crystalline Shape	Meiji Univ. 1　*Abe Go 1,Asanuma Kazuhiro 1,Uekusa Shinnichirou
	2	Addition effects of TMOS in bias enhanced diamond nucleation on silicon	Univ. of Electro-Communications 1　*Nishi Akito 1,Isshiki Hideo 1,Kimura Tadamasa 1
△	3	Quality improvement of epitaxial diamond thin film 2	Aoyama Gakuin Uni. 1,TOPLAS Eng. CO.,LTD 2　Ichihara Sachio 1,Ando Yutaka 1,Suzuki Kazuhiro 2,Sawabe Atsugito 1
△	4	Formation of step-free surfaces on diamond(111) surfaces by step-flow growth	AIST 1, JST/CREST 2, Univ. of Tsukuba 3, TIMS 4　*Tokuda Norio 1,2, Umezawa Hitoshi 1, Ri Sunggi 1,2, Ogura Masahiko 1,2, Yamabe Kikuo 3,4, Okushi Hideyo 1,2, Yamasaki Satoshi 1,2,3
	5	Exciton-Exciton Scattering in High-Quality Homoepitaxial Diamond Thin Film	AIST-DRC 1, CREST 2　Hideyuki Watanabe 1 2, Masahiko Ogura 1 2, Satoshi Yamasaki 1 2, Shoukichi Kanno 1 2, Hideyo Okushi 1 2
	6	Structure analysis of the defective layer generated by Ar/H ion irradiation	AIST1, Tsukuba Univ.2, Tohoku Univ.3　Yamazaki Yuichi1,2, Takeuchi Daisuke1, Ishikawa Kenji3, Yamasaki Satoshi1,2
		Break 10:45〜11:00
	7	Effect of hydrogen ion etching treatment of the substrates on n-type diamond growth	NIMS　Koizumi Satoshi 1, Tavares Celine 1, Kanda Hisao 1
	8	Diamond Film Growth Using High-Power Density MWPCVD with Conventional Quartz-Type Deposition Apparatus	Dept. of Quantum Electronic Device Eng., Graduate School of Eng., Osaka Univ.　*Nakai Takahiro 1, Miyatake Hidetaka 1, Arima Kazuya 1, Maida Osamu 1, Ito Toshimichi 1
	9	Control of Carrier Diffusion in High-Quality CVD Diamond and their Possible Application	Osaka Univ. 1 　*Yamamoto Takashi 1,Matsubara Hiroshi 1,Maida Osamu 1,Teraji Tokuyuki 2,Ito Toshimichi 1
△	10	Semiconductor properties of B implantation diamond with FIB	Waseda Univ. 1,NEDO 2,AIST 3　*Takashi Koide 1,2,Souichi Mejima 1,2,Kazuyuki Hirama 1,2,Nobuteru Tubouchi 3,Masahio Ogura 3,Akiyoshi Chayahara 3,Shinichi Shikata 3,Takehiro Shinada 1,Iwao Ohdomari 1,Hiroshi Kawarada 1,2
	11	Diamond films doped by a combination of ion implantation and high-pressure high-temperature annealing	NTT Basic Research Labs, NTT Corporation　*Kenji Ueda 1, Makoto Kasu 1, Toshiki Makimoto 1
△	12	Study of Synthesis Condition and Tc in Heavily B-doped CVD Diamond Superconductivity	Waseda University 1,National Institute for Materials Science 2　*Iriyama Shingo 1,Takenouchi Tomohiro 1,Ishiwata Hitoshi 1,Okada Ryousuke 1,Tachiki Minoru 2,Takano Yoshihiko 2,Ishii Satoshi 2,Okutsu Takashi 2,Ueda Shinya 2,Kawarada Hiroshi 1
		Lunch 12:30〜13:30
29p-W-　/ II
	1	The selective etching effect of deuterium. in microwave plasma CVD homoepitaxial diamond growth	Univ. Tsukuba　1, AIST-DiaRC　2, CREST　3, JST　4, NIMS　5　*Mizuochi Norikazu 1 2 3, Watanabe Hideyuki 2 3, Makino Toshiharu 2 3, Kato Hiromitu 2 3, Niitsuma Jun-ichi 4, Sekiguchi Takashi 5, Isoya Junichi 1 2, Okushi Hideyo 2 3, Yamasaki Satoshi 1 2 3
	2	Diamond deep-UV photodiode using a refractory metal nitride electrode	NIMS 1, CNRS 2　*Koide Yasuo 1, Liao Meiyong 1, Alvarez Jose 2
△	3	Performance of soft X-ray detectors using high-quality single-crystalline CVD diamond films.	Osaka Univ. 1, NIMS 2, JAEA/SPring-8 3, NIMS/ SPring-8 4　*Matsubara Hiroshi 1, Maida Osamu 1, Teraji Tokuyuki 2, Ito Toshimichi 1, Saito Yuji 3, Kobayashi Keisuke 4
	4	RF performance of p-i-p FET fabricated on heteroepitaxial diamond	Kobe Steel, Ltd. 1, Waseda Univ. 2　Kawakami Nobuyuki 1, Yokota Yoshihiro 1, Hirama Kazuyuki 2, Satoh Mitsuya 2, Kawarada Hiroshi 2, Tachiabna Takeshi 1, Hayashi Kazushi 1, Kobashi Koji 1
	5	Electrical properties of diamond pn+ junction	AIST 1,JST/CREST 2, Tsukuba Univ 3　*Shimomura Tomoko 1,3 ,Toshiharu Makino 1,2 , Norio Tokuda 1,2 ,Hiromitsu Kato 1,2 ,Hideyo okushi 1,2 ,Satoshi Yamasaki1,2,3　,Songi Ri ,1,2
	6	Electorical and current-injected light emission properties of (001)-oriented diamond p-i-n junctions	AIST 1, JST/CREST 2, Univ. of Tsukuba 3　*Toshiharu Makino 1,2, Hiromitsu Kato 1,2, Masahiko Ogura 1,2, Norio Tokuda 1,2, Sunggi Ri 1,2, Hideyuki Watanabe 1,2, Satoshi Yamasaki 1,2,3, Hideyo Okushi 1,2
	7	Investigation of surface electronic states on diamond surfaces by total photoelectron emission yield spectroscopy	AIST Diamond RC 1　*Daisuke Takeuchi 1, Christoph Erwin Nebel 1, Satoshi Yamasaki 1
	8	Photoelectron emission mechanism from H-terminated nano-diamond surfaces	AIST DiaRC 1, Hasselt Univ. 2　*Daisuke Takeuchi 1, Christoph E. Nebel 1, Satoshi Yamasaki 1, Oliver A. Williams 2
		Break 15:30〜15:45
	9	Chemical modification of H-terminated diamond films with sulfur-containing functionalities by the use of elementary sulfur	AIST　*Nakamura Takako 1, Ohana Tsuguyori 1, Ishihara Masatou 1, Hasegawa Masataka 1, Koga Yoshinori 1
	10	Theoretical study on stability of Al on diamond (001) surfaces	NTT Basic Research Labs. 1　*Hiroyuki Kageshima 1, Makoto Kasu 2
	11	Improvement of diamond field-effect transistor property by passivating negative charged layer	Waseda Univ.1,NEDO.2　*Fukumoto Wataru 1,Yohara Keiichirou 1.2,Tanaka Masaya 1.2,Hirama Kazuyuki 1.2,Kawarada Hiroshi 1.2
△	12	Influence of O2- ion radiation on Hydrogen terminated p-type diamond	Waseda Univ. 1　*Masaya Tanaka 1,Takashi Oki 1,Kazuyuki Hirama 1, Kwang Soup,Song 1, Hiroshi Kawarada 1
	13	Evaluation of low temperature properties of diamond 2-D hole gas using MISFET structure	Waseda Univ. 1,National Inst. for Materials Science　*Okada Ryosuke 1,Ishiwata Hitoshi 1,Takenouchi Tomohiro 1,Iriyama Shingo 1,Tachiki Minoru 2,Takano Yoshihiko 2,Ishii Satoshi 2,Okutsu Takashi 2,Ueda Shinya 2,Kawarada Hiroshi 1
△	14	Low temperature re-H-termination for diamond by atenna-edge-type microwave plasma	Waseda Univ 1　Jingu Yoshikatsu 1, Koshiba Toru 1,Takayanagi Hidenori 1, Yamauchi Shintarou 1, Yohara Keiichirou 1, Hirama Kazuyuki 1, Iwasaki Takayuki 1, Kawarada Hiroshi 1
▲△	15	H2/O2 Plasma Pretreatments of HPHT Diamond Substrates Prior to CVD Growth	NTT Basic Research Labs. 1　*A Tallaire1, M Kasu1, K Ueda1, T Makimoto1
▲△	16	Improvement of Diamond FET Characteristics by H2/O2 Plasma Pretreatments	NTT Basic Research Labs.　*A Tallaire1, M Kasu1, K Ueda1, Y Yamauchi1, T. Makimoto1
	17	RF Gate Properties of H-Terminated Diamond Field-Effect Transistors	NTT Basic Research Labs.　*Makoto Kasu1, Kenji Ueda1, Alexandre Tallaire1, Yoshiharu Yamauchi1, Toshiki Makimoto1
6.2 Carbon Films
August 30 (Wed.) 9:30〜17:45
30a-W-　/ II
	1	Synthesis of cBN films by microwave plasma CVD	Nihon Univ. 1,NIMS 2　*Sasaki Shunsuke 1,Senbongi Hiroshi 1,Sigeta Yuuki 1,Matsumoto Seiitchirou 2,Nakamura Katsumitsu 1
	2	Characterization of BCN film after wet process for interconnection formation	Daikin Industries,Ltd.1, Osaka Univ.2　　D. Watanabe 1, R.Moriyama 2, H. Aoki 2, M.K.Mazumder 2, C. Kimura 2 and T. Sugino 2
	3	Dependence of water density on C ratio in BCN film	Osaka Univ. 1　Moriyama Ryota 1,Motaharul Kabir Mazumder 1,Kimura Chiharu 1,Aoki Hidemitsu 1,Sugino Takashi 1
	4	Argon pressure dependence of NEXAFS spectra of a-CNx films prepared by sputtering deposition	LASTI Univ. Hyogo 1, Eng. Univ. Hyogo 2　*Masahito Niibe 1,Kazuyoshi Miyamoto 1,2, Toru Mitamura 2, Yukinobu Kakutani 1, Kozo Mochiji 2
△	5	XPS analysis of the Diamond-like Carbon (DLC) Films	Grad. Schl. of AdSM, Hiroshima Univ.1, Toyo Advanced Technologies Co.,Ltd.2　*Takabayashi Susumu1, Motomitsu Kunihiko1, Takahagi Takayuki1, Okamoto Keishi2, Nakatani Tatsuyuki2
	6	Control of band gap of DLC film prepared by pulsed discharge plasma CVD	Chubu Univ. 1　*Shinagawa Takashi 1,Yokohara Kentarou 1,Yokoi Takashi 1, Noda Mikio 1,Umeno Masayoshi 1,
		Break 11:00〜11:15
	7	Measurement of DLC (Diamond-Like Carbon) film density with Ar cluster ion beam by X-ray microbeam radiation.	Graduate School of Engineering, Univ. of Hyogo 1, Lasti, Univ. of Hyogo 2, Graduate School of Material Science, Univ. of Hyogo 3 　*Shogo Nakazawa 1, Noriaki Toyoda 2, Junji Matsui 3, Yoshiyuki Tsusaka 3, Kazunori Fukuda 3, Kozo Mochiji 1, Toru Mitamura 1, Isao Yamada 2
△	8	Film density of a-C:H deposited by microwave plasma CVD technique	Nagaoka Univ. Tech. 1　*Matsuo Ryotarou 1,Ohshio Shigeo 1,Nishino Junichi 1,Saitho Hidetoshi 1
	9	Evaluation of film density of a-C:H films prepared in CH4-H2 plasma	Nagaoka Univ. of Tech. 1　*Ono Yuki 1, Matsuo Ryotaro 1, Ohshio Shigeo 1, Nishino Junichi 1, Saitoh Hidetoshi 1
	10	Formation of DLC film by pulsed microwave surface plasma CVD	Chubu Univ. 1　*Furuichi Norichika 1, Hideo Uchida 1, Mikio Noda 1, Masayosi Umeno 1
		Lunch 12:15〜13:15
30p-W-　/ II
	1	Formation of a-CNx:H films with controlled hydrogen contents (1) Synthesis and structural analysis	Nagaoka Univ. of Technology 1　Ito Haruhiko 1, Kogure Yukihisa 1, Saitoh Hidetoshi 1
	2	Formation of a-CNx:H films with controlled hydrogen contents (2) Performance of cold cathode whiskers	Nagaoka Univ. of Technology　Ito Haruhiko 1, Kogure Yukihisa 1, Ooki Satoshi 1, Saitoh Hidetoshi 1
	3	Formation of a-CNx:H films with controlled hydrogen contents (3) dissociation process of starting materials	Nagaoka Univ. of Technology 1　Ito Haruhiko 1, Kogure Yukihisa 1, Saitoh Hidetoshi 1
▲	4	Optical and structural properties of diamond like carbon films deposited by pulse microwave surface wave plasma CVD	Chubu Univ.　D.C. Ghimire1, S. Adhikari1,H.R. Aryal1 , H. Uchida1, M. Noda 1and M. Umeno1
▲	5	Annealing treatment of amorphous carbon thin films for photovoltaic application	Chubu Univ.　H.R. Aryal1, S. Adhikari1, D.C. Ghimire1, H. Uchida1, M. Noda 1and M. Umeno1
△	6	Characterization of Iodine doped amorphous carbon thin films prepared by microwave surface-wave plasma CVD	Chubu Univ.1 　*　S. Adhikari1, H.R. Aryal1, D.C. Ghimire1, H. Uchida1, M. Noda1 and M. Umeno1
△	7	Relation between bonding hydrogen concentration, film structures and properties for sputtered a-C:H films (II).	Univ. of Ryukyus　*Oshiro Takehiko 1, Yamazato Masaaki 1, Higa Akira 1, Toguchi Minoru 1
	8	Synthesis technique of DLC solar cell by ionization vacuum evaporation method	Nihon Univ. 1,Nanotec 2,Oubutsu Univ. 3　Tomoo Uemura 1,Nakamori Hideki 2,Suzuki Kaoru 3
		Break 15:15〜15:45
	9	Deposition of DLC film by DC plasma CVD using Adamantane	Chubu Univ. 1　Takeuchi Hiroyoshi 1,Suwa Masato 1,Uchida Hideo 1,Noda Mikio 1,Umeno Masayoshi 1
	10	Effect of the substrate temperature on the amorphous carbon nitride films prepared by rf-magnetron sputtering	National Defense Academy　Masami Aono, Hidenobu Akiyoshi, Nobuaki Kitazawa, Yoshihisa Watanabe
	11	Medical application of surface-carbonized polymer by PBII method	RIKEN 1, Tokyo Univ. 2, Tokyo Women's Med. Univ. 3　*Kobayashi Tomohiro 1, Suzuki Yoshiaki 1, Iwaki Masaya 1, Yokota Toshihiko 2, Katou Rui 2, Terai Takayuki 2, Ujiie Hiroshi 3
	12	Anti-corrosion of DLC film against chemicals	Tokyo Denki Univ.1, Saudi Aramco2　*Kenji Matsumoto1, Yoshihiro Ohno1, Alanazi Ali S2, Keisuke Sato1, Kenji Hirakuri1
	13	Adhesion Enhancement Effects of Diamond-Like Carbon Thin films by Plasma-Based Ion Implantation (1)	Ion Engineering Research Institute Corp.　*Akira Nakayama 1,Taizou Iwai 1,Megumi Miyazaki 1,Katsuaki Yokoyama
	14	Adhesion Enhancement Effects of Diamond-Like Carbon Thin films by Plasma-Based Ion Implantation (2)	Ion Engineering Research Institute Corp.　*Akira Nakayama 1,Taizou Iwai 1,Katsuaki Yokoyama 1
	15	Tribological properties of DLC films in water environment against SUS440C ball with various roughness	AIST　*Ohana Tsuguyori 1, Wu Xingyang 1, Nakamura Takako 1, Tanaka Akihiro 1
	16	Study on Nono-Diamond(ND) Films formed by Plasma Source Ion Implantation(PSII)	Kanazawa Inst. of Technology AMS R&D Center 1, Industrial Research Inst. of Ishikawa 2　Ikenaga Noriaki 1, Yasui Haruyuki 2, Awazu Kaoru 2, Sakudo Noriyuki 1
6.2 Carbon Films
August 31 (Thu.) 9:30〜12:00
31a-W-　/ II
△	1	A Molecular Dynamics Study on Formation Process of Diamond Like Carbon	Dept. Appl. Chem., Tohoku Univ.1,JST-PRESTO2, NICHe, Tohoku Univ.3　Shibata Toshiaki1, Takahashi Shuko1, Miura Ryuji1, Tsuboi Hideyuki1, Koyama Michihisa1,Endou Akira 1,Takaba Hiromitsu 1, Kubo Momoji1,2, Carlos A. Del Carpio1,Miyamoto Akira 1,3
	2	Fabrication of a-CNx:H for hydrogen strage	Nagaoka Univ. of Tech. 1　*Nozaki Taro 1,Toda Ikumi 1,Saitoh Hidetoshi 1,Ito Haruhiko 1
	3	Growth and Field Emission Characterization of Electrically Conductive Hard-Carbon Films（V）	Shizuoka Univ., Res. Inst. Elect. 1　*Kinoshita Haruhisa 1, Yamashita Manabu 1, Ohno Genji 1, Yamaguchi Tomuo 1
△	4	Fabrication of Electroluminescence Device Using a-C film Deposited by Sputtering	Shizuoka Univ., Res. Inst. Elect. 1　*Sakurai Katsutoshi 1, Matsumoto Osamu 1, Kinoshita Haruhisa 1, Nakanishi Youichirou 1
	5	Field emission of nitrogen included carbon materials	Chiba Institute of Technology 1 , Musashi Institute of Technology 2　*Yukihiro Sakamoto 1, Naoki Hamamura 2, Matsufumi Takaya 1
		Break 10:45〜11:00
	6	Growth control of C60 thin film on LiNbO3 substrate	Graduate School of Liberal arts and Science Yokohama City Univ. 1,Dept.Mater.Sci.& Eng. Waseda Univ. 2　Takayuki Kuki 1,Shintaro Miyazawa 2,Masaru Tachibana 1,Kenichi kojima 1
▲	7	Field emission characteristics of carbon needles films deposited on Si wafers	Department of Electrical Engineering, Graduate School of Engineering, Osaka University　1　Jiayu WANG 1, Toshimichi ITO 1
	8	Fabrication and electric field emission characteristic of conic carbon deposited by MPCVD	The University of Electro-Communications. 1　*Yuji Matsumoto 1, Yudai Sugawara 1, Kouichi Usami 1, Masataka Moriya 1, Yoshinao Mizugaki 1, Tadayuki Kobayashi 1, Narumi Yugo 1
	9	Theoretical study on adsorption states of Li atoms on monolayer graphite surface	Murata Mfg. Co., Ltd.　*Shin'ichi Higai 1, Atsushi Honda 1, Kunio Nishida 1, Nobuyuki Wada 1, Yukio Sakabe 1
6.3 Oxide Electronics
August 29 (Tue.) 10:00〜17:45
29a-RA-　/ II
	1	Determination of Band Lineups of Transparent Oxide Semiconductors and Related Materials	Tokyo Tech 1, JST ERATO-SORST 2　*Hiroshi Yanagi1, Yoshitake Toda1, Hidenori Hiramatsu2, Yoichi Kamihara2, Kentaro Kayanuma2, Toshio Kamiya1,2, Masahiro Hirano1,2, Hideo Hosono1,2
	2	Photosensitization and ultra fast carrier dynamics of CdSe quantum dots grafted onto fluorine-doped tin oxide (FTO) glass and nanostructured SnO2 electrodes	Dept. Appl. Phys. Chem. Univ. Electro-Commun 1,Course of Coherent Opt. Sci. Univ. Electro-Commun 2　Yanai Makoto 1,Shen Qing1,2,Toyoda Taro 1,2
▲	3	Growth of epitaxial SnO2 layers on TiO2(110) by molecular beam epitaxy	NIMS 1, Charles Univ. 2　*Janeček Petr 1,2,Hishita Shunichi 1,Nehasil Václav 2,Haneda Hajime 1
	4	Fuluorine doped SnO2 prepared by spry pyrolysis deposition method with mixed mist	Fujikura Ltd.　*Usui Hiroki 1, Omori Kiwako 1, Goto Kenji 1, Kobayashi Kazuharu 1
	5	ITO thin films deposited at liquid nitrogen temperature on a plastic film substrate	Tokyo Polytechnic Univ. 1　*Sakurai Daisuke 1,Onai Yusuke 1,Hoshi Yoichi 1
		Break 11:15〜11:30
	6	Internal Stress of Tin-Doped Indium Oxide (ITO) and Indium-Zinc Oxide (IZO) Films Deposited by DC Magnetron Sputtering	Aoyama Gakuin Univ. 1,Toshiba Corp. 2,Tosoh Corp. 3,Idemitsu Kosan Co., Ltd. 4　*Eriko Nishimura 1,2,Tomoko Sasabayashi 1,Norihiro Ito 1,Yasushi Sato 1,Kentaro Utsumi 3,Akira Kaijo 4,Kazuyoshi Inoue 4,Yuzo Shigesato 1
	7	Weak localization and Electron-phonon Scattering in Transparent Conducting IZO, ITO and InO films	Kyushu Univ. 1, Idemitsu Co.,Ltd. 2　* Makise Kazumasa 1, Funaki Makoto 1, Shinozaki Bunjyu 1, Shimane Yukio 2, Yano Koki 2, Nakamura Hiroaki 2, Inoue Kazuyoshi 2
	8	Crystallographic analysis of ZnO transparent conductive oxide by sol-gel process	Osaka Univ. 1, Ritsumeikan Univ. 2,　*Kato Shingo 1, Matsuura Tsutomu 1, Sobajima Yasushi 1, Toyama Toshihiko 1, Okamoto Hiroaki 1, Minemoto Takashi 2, Takakura Hideyuki 2, Hamakawa Yoshihiro 2
	9	Deposition of ZnO thin films by photochemical deposition method	Nagoya Inst. of Tech. 1　*Azuma Masaki 1, Ichimura Msaya 1
	10	Deposition of ZnO Thin Films from Supercritical CO2 Fluids	Univ. Yamanashi　*E. Kondoh 1, K. Sasaki 2
	11	Photocatalytic Lithography used ZnO Thin Films deposited by RF Magnetron Sputtering	Advanced Course of Takamatsu National College of technology 1　* Tsukasa Imajou 1, Hiroshi Okano 1
		Lunch 13:00〜14:00
29p-RA-　/ II
	1	c-axis epitaxial growth and properties of La2-2xSr1+2xMn2O7 bilayer manganate thin films by sputtering	Kyoto Univ. 1,Micron Japan Inc.　*Tatsumi Ryo 1,Lmouchter Mohamed 2,Suzuki Minoru 1
▲	2	Magnetic and electronic properties of Nd0.5Ca0.47Ba0.03MnO3 thin film	Osaka Univ. 1, Tata Inst. 2　*Krushna Mavani 1, P. L. Paulose 2, Dhanvir Rana 1, Takahashi Kouhei 1, Kawayama Iwao 1, Murakami Hironaru 1, Tonouchi Masayoshi 1
	3	Control of Metal-Insulator Transition at Room Temperature in Strained VO2 Thin Films	ISIR-Sanken Osaka Univ. 1　Kazuki Nagashima 1, Takeshi Yanagida 1, Hidekazu Tanaka 1, Tomoji Kawai 1
	4	Electric field-induced phase transition in VO2 films prepared by ICP-assisted reactive sputtering (II)	Tokai Univ.1　*Sasakawa Yusuke 1,Okimura Kunio 1
	5	Preparation of VO2 films on C-Al2O3 substrates by ICP-assisted reactive sputtering(II)	Toukai Univ. 1　Nihei Yusuke 1,*Okimura kunio 1
	6	Electric field induced resistance switching of VOx thin films prepared on metal substrates	JAIST 1　Sakai Joe 1, Imai Syozo 1
	7	Development of a Solid-State Thin-Film Electrochromic Device	Tokyo Univ. of Agri. & Tech.　*Yoshimura Hideo 1, Kosida Nobuyoshi 1
		Break 15:45〜16:00
▲	8	Synthesis, structure and magnetism of BiFeO3 thin films on (LaAlO3)0.3(Sr2AlTaO6)0.7 substrates	Osaka　Univ. 1　*Dhanvir Rana 1, Takahashi Kouhei 1, Krushna Mavani 1, Kawayama Iwao 1, Murakami Hironaru 1, Tonouchi Masayoshi 1
	9	Terahertz radiation from manganese-doped multiferroic BiFeO3 thin films	Inst. of Laser Engineering, Osaka Univ.　*Kouhei Takahashi, Masayoshi Tonouchi
	10	Local atomic environments in amorphous oxide semiconductor In-Ga-Zn-O studied by EXAFS and ab-initio structure relaxation	ERATO-SORST,JST 1, Tokyo Tech. 2,　JASRI 3, Tokyo Tech. 4　*Kenji Nomura 1, Tosho Kamiya 1,2, Hiromichi Ohta 1, Uruga Tomoya 3, Masahiro Hirano1and Hideo Hosono 1,2,4
	11	Structural characterization of epitaxial BaTiO3 thin film by synchrotron X-ray diffraction	ICR, Kyoto Univ. 1, SPring-8/JASRI 2　Kawai Masanori 1, Kan Daisuke 1, Sakata Osami 2, Kimura Shigeru 2, Shimakawa Yuichi 1
	12	Thermal Diffusivity Measurement of SiO2 Thin Films Using Pico Second Thermoreflectance Method	Aoyama Gakuin Univ.1,AIST 2　*Arisawa Ryo 1,Yagi Takashi 2,Taketoshi Naoyuki 2,Baba Tetsuya 2,Miyamura Amika 1,Sato Yasushi 1,Shigesato Yuzo 1
	13	Quantitative Mapping of Thin Film Conductivity by the Scanning Microwave Microscope	The Univ. of Tokyo 1, The Univ. of Tokushima Graduate School 2, KAST 3, Tohoku Univ.4, PRESTO 5, COMET 6　Okazaki Sohei 1, Okazaki Noriaki 2, Hirose Yasushi 3, Furubayashi Yutaka 3, Nishimura Jun 4, Ueno Kazunori 4, Ohtomo Akira 4,5, Kawasaki Masashi 4,6, Hitosugi Taro 1,3, Shimada Toshihiro 1,3, Hasegawa Tetsuya 1,3
	14	In-situ Observation of photocatalytic reaction in ionic liquid by using dedicated transmission electron microscopy	Nagoya University. 1, Institute of Ecotopia Science, Nagoya University. 2　*Nozaki Tsutomu 1, Yoshida Kenta 1, Makihara Masaki 1, Torimoto Tsukasa 1, Tanaka Nobuo 2
6.3 Oxide Electronics
August 30 (Wed.) 10:00〜18:45
30a-RA-　/ II
△	1	Fabrication of isovalent cation doped SnO2 thin films	Dept. of Innov. Eng. Mater. Tokyo Inst. of Tech. 1,　*Takahiro Watanabe 1, Masayasu Kasahara 1, Akifumi Matsuda 1, Mamoru Yoshimoto 1,
△	2	Electronic properties of SnO2 epitaxial films grown on TiO2(001) substrate: Effect of buffer layers	IMR Tohoku Univ. 1, JST-PRESTO 2　*Okude Masaki 1, Ueno Kazunori 1, Ohtomo Akira 1,2, Kawasaki Masasi 1
△	3	On the possibility of the template guiding the low-resistivity ITO film prepared by plasma sputtering	kyusyu Kyoritsu Univ. 1,Liaoning Inst.Technol. 2　*Kono Akihiko 1,S.N.Luo 2,Z.B.Feng 1,Nouchi Norimoto 1,Shoji Fumiya 1
△	4	Indium-tin-oxide thin films deposited by Spray CVD on non-flat substrates	Tokyo Polytechnic Univ. 1, Tokyo Inst. Technol. 2　*Kondo Takeshi 1, Wang Meihan 1, Seki Shigeyuki 1, Uchida Takayuki 1, Ohtsuka Masao 1, Sawada Yutaka 1, Funakubo Hiroshi 2
▲△	5	Gas evolution and crystallization of amorphous indium-tin-oxide thin film during the heating process	Tokyo Polytechnic Univ. 1, Nihon Univ. 2, Rigaku Co. 3　*Wang Meihan 1, Tokiwa Satoko 2, Nishide Toshikazu 2, Kasahara Yoshihiro 1, Onai Yusuke 1, Arii Tadashi 3, Kishi Akira 3, Seki Shigeyuki 1, Uchida Takayuki 1, Ohtsuka Masao 1, Hoshi Yoichi 1, Kondo Takeshi 1, Sawada Yutaka 1
		Break 11:15〜11:30
	6	Gasochromic Properties of Tungsten Oxide Thin Films	Tohoku Univ. 1, JAEA 2, Inst. for Materials Research 3　　*Aichi Inouye 1, Katsuyoshi Takano 2, Shunya Yamamoto 2, Shinji Nagata 3, Tatsuo Shikama 3
	7	Impurity effects in photo-induced hydrophilic conversion on ultra-smoothed TiO2 surface	Tokyo Inst. of Technology 1, CREST-JST 2, Tokyo Univ. of Science 3, Univ. of Tokyo 4, NIMS 5　*Katayama Masao 1,2, Miyakawa Takayuki 3, Kuwano Jun 3, Ohsawa Takeo 1, Koinuma Hideomi 2,4,5, Matsumoto Yuji 1,2
△	8	STM observation of a rutile TiO2(110) ultra-smooth surface	the Univ. of Tokyo 1　*Shiraiwa Manabu 1, Hitosugi Taro 1, Shimizu Ryota 1, Abe Hitoshi 1, Suzuki Tadamasa 1, Shimada Toshihiro 1, Hasegawa Tetsuya 1
△	9	Optical properties of M4+-doped anatase TiO2	KAST 1, Univ. of Tokyo 2　*Yutaka Furubayashi 1, Tong Lai Chen 1, Yasushi Hirose 1, Takayuki Okumoto 2, Taro Hitosugi 1,2, Toshihiro Shimada 1,2, Tetsuya Hasegawa 1,2
	10	Photosensitization of CdSe Quantum Dots Grafted onto TiO2 Electrodes of Rutile-Anatase Types Composite	Dept. Appl. Phys. Chem. 1, Course of Coherent Opt. Sci. 2　Otsuka hiromi 1, Shen Qing 1.2, Toyoda Taro 1.2
	11	Low-temperature deposition of anatase TiO2 on Si(100) surfaces	Yamagata Univ 1　Hirose Fumihiko, Ito Masashi, Matsushima Yu
		Lunch 13:00〜14:00
30p-RA-　/ II
	1	Quantum Effect on Thickness-programmed Photocatalyst Reaction for Rutile TiO2/Nb: TiO2 Single Crystal Film	Tokyo Inst. of Tech. 1, The Univ. of Tokyo 2, CREST-JST 3, NIMS 4　Takatoshi Abe 1, Takeo Ohsawa 1, Hideomi Koinuma 2,3,4, Yuji Matsumoto 1,3
	2	Thickness-programmed Photocatalyst Reaction for Rutile V0.05Ti0.95O2/Nb:TiO2 Single Crystal Film	Tokyo Inst. of Tech. 1, The Univ. of Tokyo 2, CREST-JST 3, NIMS 4　Takatoshi Abe 1, Takeo Ohssawa 1, Hideomi Koinuma 2,3,4, Yuji Matsumoto 1,3
	3	Defect structures and charge trap states in TiO2	FUJITSU Labs.　Yamasaki Takahiro, Kaneta Chioko
	4	Optical and Structural Properties of TiO2/LaAlO3 Thin Films Prepared by Oxygen Radical Assist-Type RF Magnetron Sputtering	Tokyo University of Science 1　*Akira Nakamura 1, Tohru Higuchi 1, Takeshi Hattori 1, Takeyo Tsukamoto 1
	5	Photosensitization and Ultrafast Carrier Dynamics of CdSe Quantum Dots Grafted onto Photonic TiO2 Electrodes	Dept. Appl. Phys & Chem. 1,Course of Coherent Opt. Sci. 2, Univ. Electro-Commun.　Sato Akira 1,Diguna Lina J. 1,Shen Qing 1,2,Toyoda Taro 1,2
	6	Dye-sensitized solar cells using nanoparticle ZnO/TiO2 heterostructures	Univ.of Electro-Communications 1,21st Century COE program "Cource of Coherent Optical Science" 2,C.I.KASEI 3　*Shoji Yoshifumi 1,Tokue Junya 1,Sano Tatuji 1,Kobayashi Naoki 1,2,Nishikata Akira 3
	7	High rate deposition of photocatalytic TiO2 films with high activity by gas-flow sputtering	Aoyama Univ. 1, Bridgestone Co. 2　*Kubo Yoshiyuki 1,Iwabuchi Yoshinori 2,Ohno Shingo 2,Yoshikawa Masato 2,Sato Yasushi 1,Shigesato Yuzo 1
△	8	Preparation and phtocatalytic prorerties of sol-gel derived Au,Ag nanoparticles in TiO2 thin films	Tokai Univ. 1 2 　Moriyama Yusuke 1, Yokoyama Eisuke 2, Sakata Hironobu 1, Wakaki Moriaki 1 2
	9	Effects of the TiO2:Ta interfacial-layer on the photocatalytic property of TiO2/SnO2:F stacked-layers	AIST 1　*Masahisa Okada 1, Yasusei Yamada 1, Kazuki Tajima 1, Kazuki Yoshimura 1
		Break 16:15〜16:30
	10	Promotion of oxidization of TiO2 films in plasma assisted electron beam evaporation	Tokyo Polytechnic Univ. 1　*Kuniyoshi Yuji 1, Kawaguchi Shigetoshi 1, Sakai Testuya 1, Hoshi Yoichi 1
	11	In-situ measurement of the electric resistivity of titanium oxide nanorods by using a pointcontact piezo holder.	Nagoya Univ. 1, Nagoya Inst. of Technology 2, JFCC 3, Nagoya Univ. Ecotpia 4　Takahiro Nambara1, Kenta Yoshida1, Lei Miao2, Sakae Tanemura3, Nobuo Tanaka4
	12	Electrical conduction of anatase Nb:TiO2 thin films deposited by using reactive rf magnetron sputtering	KAST 1, Univ. of Tokyo 2　*Naoomi Yamada 1, Taro Hitosugi 1,2, Atsuki Ueda 1,2, Yutaka Furubayashi 1, Toshihiro Shihmada 1,2, Tetsuya Hasegawa 1,2
	13	Effects of thermal annealing on the conductivity of Nb-doped TiO2 thin films	Univ. of Tsukuba 1　*Araya Takeshi 1, Masashi Kubota 1, Onuma Takeyoshi 1, Koyama Takahiro 1, Chichibu Shigefusa 1
	14	Oxygen deficiency dependent carrier transport properties of anatase Ti0.94Nb0.06O2 epitaxial films	Univ. of Tokyo 1, KAST 2　*能川 玄之 1,一杉 太郎 1 2,中尾 祥一郎 2,古林 寛 2,廣瀬 靖 2,島田 敏宏 1 2,長谷川 哲也 1 2
	15	Epitaxial Growth of Anatase TiO2:Nb Films on SrTiO3 Substrate by Reactive Sputtering[II]	Tokai Univ. 1　*Takayama Jun 1,Okimura Kunio 1
△	16	Transparent conductive properties of Ti0.94Nb0.06O2 thin films on glass substrates grown at room temperature	Tokyo Univ. 1,KAST. 2 　*Atsuki Ueda 1,2,Taro Hitosugi 1,2,Yutaka Furubayashi 2,Yasushi Hirose2, Seiji Konuma 2,Toshihiro Shimada 1,2,Tetsuya Hasegawa 1,2
△	17	Transparent Conductive Nb-doped TiO2 Films Deposited by DC Magnetoron Sputtering Using a TiO2-X Target.	Aoyama Gakuin Univ. 1　*Akizuki Hideo 1, Miyamura Amika 1, Sato Yasushi 1, Shigesato Yuzo 1
	18	Thermal stability of Nb:TiO2 transparent conductive films deposited by reactive rf sputtering	Tsukuba Inst. for Super Materials 1　*Takahiro Nakayama 1, Hirohiko Murakami 1
6.3 Oxide Electronics
August 31 (Thu.) 10:00〜18:15
31a-RA-　/ II
	1	Water molecule adsorption on the surface of YVO4 photo catalyst	NIMS　*Oshikiri Mitsutake
	2	Effect of ferroelectric polarization on current-voltage characteristics of LiNbO3 thin films	NTT Mycrosystem Integration Labs. 1　Akazawa Housei 1, Shimada Masaru 1
	3	Photosensitization and Ultrafast Carrier Dynamics of CdSe QDs Grafted onto TiO2 Nanotubes Electrodes.	Dept. Appl. Phys. Chem. 1, Course of Coherent Opt. Sci. 1,2, Electro-Commun Univ.　Yamamoto Kana 1, Shen Qing 1,2, Toyoda Taro 1,2
	4	Fabrication of Ultra Small Diameter MgO Nanowires by Precise Atmosphere Control	ISIR-Sanken Osaka Univ. 1　Takeshi Yanagida 1, Kazuki Nagashima 1, Hidekazu Tanaka 1, Tomoji Kawai 1
	5	Opto-electronic properties and electronic structures of layered oxychalcogenides BiCuOCh (Ch=S, Se, Te)	ERATO-SORST JST 1, Tokyo Inst. Technol. 2, Kyushu Inst. Technol. 3 　*Hiramatsu Hidenori 1, Yanagi Hiroshi 2, Ueda Kazushige 1,3, Kamiya Toshio 1,2, Hirano Masahiro 1,2, Hosono Hideo 1,2
		Break 11:15〜11:30
	6	Fabrication of amorphous InGaSnZnO Semiconductor FET	Fuji Electric Advanced Technology Co., Ltd　*Fujisawa Hiroyuki, Kato Hisato, Sekine Nobuyuki, Kawakami Haruo
	7	Ring Oscillators composed of Amorphous Oxide Semiconductor TFTs	Canon Inc. 1, Tokyo Inst. of Tech. 23　*Kaji Nobuyuki 1,Ofuji Masato 1,Cho Kenroku 1,Kumomi Hideya 1,Nomura Kenji 2, Kamiya Toshio 2,Hosono Hideo 23
▲	8	Low Temperature Deposited Aluminum Oxide as a Barrier Layer for New Memory	Process Development Team　Y. L. Park*, S. L. Cho, H.Y. Park, Jinil Lee, J. E. Lim, B. J. Bae, H. G. An, S. O. Park, H. S. Kim, U-In Chung and J. T. Moon
	9	Characterization of aluminum silicate (AlSiOx) film	Osaka Univ.　*Komatsu Naoyoshi,Kurimoto Hirofumi,Chikamatsu Kentaro,Kimura Chiharu,Aoki Hidemitsu,Sugino Takashi
	10	High-speed resistive switching and nanostructure for TiO2/TiN nanocrystalline thin film	Shizuoka University 1, Sharp corporation 2　Hiroshi Koyama 1, Masashi Konagai 1, Masayuki Fujimoto 1, Yasunari Hosoi 2, Ishihara Kazuya 2, Shigeo Ohnishi 2, Nobuyoshi Awaya 2
	11	Pulse characteristics in RESET of Binary Oxide Resistive Memory (ReRAM)	FUJITSU LAB. LTD.　*Yoshihiro SATO 1 , Kentarou KINOSHITA 1 , Masaki AOKI 1 , Yoshihiro SUGIYAMA 1
		Lunch 13:00〜14:00
31p-RA-　/ II
	1	Low current reversible resistive switching in titanate transition metal oxides	NTT Microsystem Integration Labs. 1, NTT-AT 2, NTT-AFTY 3　*Jin Yoshito 1, Shinojima Hiroyuki 1, Shimada Masaru 1, Enomoto Youichi 2, Kiuchi Mikiho 3, Okubo Tomoo 3
	2	Investigation of the Local Switching Characteristics for NiO/Pt Structure using conducting AFM	Fujitsu Lab LTD. 1　*Chikako Yoshida 1, Kenntaro Kinosita 1, Masaki Aoki 1, Yoshihiro Sugiyama 1
△	3	Generation of filamentary conduction in a Mott insulator CuO and nonvolatile resistance memory effect	Univ. Tokyo 1, CREST-JST 2　Fujiwara Kohei 1, Nemoto Takumi 1, Nakamura Yoshinobu 1, Takagi Hidenori 1,2
△	4	Nonvolatile resistive memory effect on W/CuO/Pt structure	Dept. of Adv. Mater. Sci., Univ. of Tokyo 1, CERC-AIST 2, NRI-AIST 3　Hiroshi Tomita 1,3, Kohei Fujiwara 1, Isao Inoue 2, Hidenori Takagi 1,2, Hisashi Shima 3, Hiroyuki Akinaga 3
△	5	Effect of B-site substitution on CER properties at Ti/Pr1-xCaxMnO3 interface	CREST-JST 1,CERC-AIST 2,IMR, Tohoku Univ. 3,Dept.of Appl.Phys.,Univ. of Tokyo 4　*Yamamoto Akio 1,Sawa Akihito 1,2,Akoh Hiroshi 1,2,Kawasaki Masashi 2,3,Tokura Yoshinori 2,4
	6	Colossal electro-resistance effect at the engineered interface of transition metal oxide junctions	CERC-AIST 1, Tohoku Univ. 2, Univ. of Tokyo 3　*Sawa Akihito 1, Fujii Takeshi 1,2, Kawasaki Masashi 1,2, Tokura Yoshinori 1,3
△	7	Fabrication of side-gated nanowire field-effect transistor using amorphous oxide semiconductor channel	MSL, Tokyo Tech.1, JST ERATO-SORST2, FCRC, Tokyo Tech.3　*Kosuke Matsuzaki1, Kenji Nomura2 , Hiroshi Yanagi1, Toshio Kamiya1,2, Masahiro Hirano2,3, Hideo Hosono1,2,3
△	8	Development of a bottom gate field-effect transistor with TiO2 channel	Tokyo Inst. of Technology 1, CREST-JST 2, Univ. of Tokyo 3, NIMS 4　*Katayama Masao 1,2, Koinuma Hideomi 2,3,4, Matsumoto Yuji 1,2
△	9	Fabrication single crystal SrTiO3 field effect transistor - Device process for the construction of high quality oxide hetero interfaces -	Univ.Tokyo 1 2　*Sato Taisuke 1 2,Shibuya Keisuke 2,Ohnishi Tuyoshi 2,Nisio Kazunori 1 2,Mikk Lippmaa 1 2
		Break 16:15〜16:30
△	10	Growth of rutile CoxTi1-xO2 on ZnO/p-GaN heterostructure	KAST 1, Univ. of Tokyo 2　*Hirose Yasushi 1, Hitosugi Taro 1,2, Kasai Junpei 1, Furubayashi Yutaka 1, Shimada Toshihiro 1,2, Hasegawa Tetsuya 1,2
△	11	Structural study on SrTiO3 showing room-temperature blue luminescence	ICR Kyoto Univ.1, JASRI/SPring-8 2 　*Kan Daisuke1, Masuno Atsunobu1, Shimakawa Yuichi1, Sakata Osami2, Kimura Shigeru2
△	12	Electronic properties of Ce-doped SrTiO3 thin films grown by combinatorial PLD	IMR Tohoku Univ. 1, JST-PRESTO 2　Yamada Yasuhiro 1, Toyosaki Hidemi 1, Ohtomo Akira 1,2, Kawasaki Masashi 1
△	13	Internal Photoemission Study of La0.7Sr0.3MnO3-δ/Nb:SrTiO3 Schottky Junctions	Dept. of Advanced Materials Science 1, JST2　*Hikita Yasuyuki1, Susaki Tomofumi1, Takagi Hidenori1, Harold Hwang1,2
△	14	Low Temperature Anomalous Magnetotransport of Photocarrier-Doped SrTiO3	The Univ. of Tokyo 1,PRESTO-JST 2　*Yusuke Kozuka 1,Yasuyuki Hikita 1,Motoshi Nakayama 1,Tomofumi Susaki 1, Harold Y. Hwang 1,2
△	15	Fabrication of Pr0.7Ca0.3MnO3 thin films by MOD Process and their electrical characterization	Graduate school of IST, Hokkaido Univ. 1　*Kitaichi Kosuke,Sasaki Yoshiko,Arita Masashi,Takahashi Yasuo
△	16	In-situ photoemission spectroscopic study of strain-controlled La0.5Sr0.5MnO3 thin films.	The Univ. of Tokyo 1, ISSP 4, Tohoku Univ. 5, NIMS 6　*Maniwa Atsushi 1, Chikamatsu Akira 1, Wadati Hiroki 2, Kumigashira Hiroshi 1, Oshima Masaharu 1, Fujimori Atsushi 2,3, Mikk Lippmaa 4, Kawasaki Masashi 5, Koinuma Hideomi 6
6.3 Oxide Electronics
September 1 (Fri.) 10:00〜13:00
1a-RA-　/ II
	1	Large electrical resistance change in Pt/CuOx/Pt trilayer	NRI-AIST 1, CERC-AIST 2, Grad. Sch. Frontier Sci., Univ. Tokyo 3　Shima Hisashi 1, Takano Fumiyoshi 1, Muramatsu Hidenobu 1, Akinaga Hiroyuki 1, Inoue Isao 2, Takagi Hidenori 2,3
	2	Reactive Ion Etching of CuOx -Application to Fabrication of Colossal Resistance Change Device-	NRI-AIST 1, ULVAC Inc. 2, Osaka Univ. 3　*Takano Fumiyoshi 1, Shima Hisashi 1, Muramatsu Hidenobu 1, Kokaze Yutaka 2, Suu Koukou 2, Matsumoto Shigeno 3, Melanie David 3, Tanglaw Roman 3, Rifki Muhida 3, Wilson A. Dino 3, Kasai Hideaki 3, Akinaga Hiroyuki 1
	3	Electrical properties of perovskite manganite nanochannel fabricated by AFM lithography (III)	ISIR-Sanken Osaka Univ.　*Yoshihiko Yanagisawa,Luca Pellegrino,Motoyuki Hirooka,Hidekazu Tanaka,Tomoji Kawai
	4	Nano-fabrication of transition metal oxide thin films by molybdenum lift-off	JST-CREST1, ISIR-Sanken Osaka Univ.2　Suzuki Naoki1, Tanaka Hidekazu1,2, Yamanaka Satoshi2, Ojima Kaoru1, Kanai Masaki1, Kawai Tomoji1,2
	5	Preparation of metal oxides nano-array by imprint technique using MgO nano-mask	Osaka Univ. 1, JST-CREST. 2, POSTECH. 3　*Tanaka Hidekazu 1,2, Suzuki Naoki 2, Yanagisawa Yoshihiko 1, Yamanaka Satoru 1, Ojima kaoru 2, Lee Bongkok 2, Seo Jeong Hyun 3, Lee Heayeon 1,2, Kanai Masaki 2, Kawai Tomoji 1,2
		Break 11:00〜11:15
	6	Pulsed laser deposition: Composition modulation of SrTiO3 homoepitaxial thin films	Univ. Tokyo 1, Univ. Tokyo 2, Bruker AXS 3　*Ohnishi Tsuyoshi 1, Yamamoto Takahisa 2, Saito Keisuke 3, Kurosawa Toshiyuki 3, Ueki Sadao 3, Lippmaa Mikk 1
	7	Pulsed laser deposition: RHEED intensity oscillation ~ Does the one oscillation correspond to one monolayer? ~	Univ. Tokyo 1　*Ohnishi Tsuyoshi, Lippmaa Mikk
	8	Temperature and electric-field dependent permittivity of SrTiO3 reflected in junction I-V characteristics	University of Tokyo 1,PRESTO-JST 2　Susaki Tomofumi 1,Kozuka Yusuke 1,Hwang Harold 1,2
	9	The band diagram of SrRuO3/Nb:SrTiO3 heterointerfaces	The University of Tokyo 1,2, ISSP 3, Tohoku University 4, NIMS 5　*Makoto Minohara 1, Daisuke Toyota 2, Isao Ohkubo 2, Hiroshi Kumigashira 2, Masaharu Oshima 1,2, Mikk Lippmaa 3, Masashi Kawasaki 4, Hideomi Koinuma 5
	10	Control of two-dimensional superconductivity in Nb-doped SrTiO3 using local field effect	Univ. Geneva 1, Univ. Tokyo ISSP 2　*Takahashi Kei 1, Giamarchi Thierry 1, Shibuya Keisuke 2, Ohnishi Tsuyoshi 2, Lippmaa Mikk 2, Triscone Jean-Marc 1
	11	Structural and Electric Properties of Interface Engineered La2Ti2O7/SrTiO3 Thin Film	Tokyo University of Science 1,　 　*T. Higuchi 1, M. Satake 1, K. Tanaka 1, M. Wakui 1, T. Hattori 1, T. Tsukamoto 1
6.4 Novel Materials for Thin Films
August 29 (Tue.)
29a-P2-　/ II
		Poster Session 29a-P2-1〜22　9:30〜11:30
△	1	Fabrication of FGM thin films by PLD method in high gravity field	Kyushu Univ. 1　Kurogi Yuko 1, Nishiyama Takashi 1, Nagayama Kunihito 1
△	2	Fabrication of FGM thin films of two-component system materials by PLD method under a strong centrifugal field	Kyushu Univ.　*Takashi Nishiyama, Yuko Kurogi, Kunihito Nagayama
△	3	Control the new feature of glass surface by nanoimprint lithography	Tokyo Inst. of Tech.　Yasuyuki Akita 1, Akifumi Matsuda 2, Masayasu Kasahara 3, Mamoru Yoshimoto 4
△	4	Fabrication and opt-electrical property of In3FeTi2O10 epitaxial films	Tokyo tech. 1, JST 2　Youichi Ogo 1. Kenji Nomura 2. Hiroshi Yanagi 1, Toshio Kamiya 1. Masahiro Hirano 2. Hideo Hosono 1,2
△	5	Electrodhemical deposition of ZnO thin films on (111)Pt/c-sapphire and (111)Si	Osaka Prefecture Univ. 　*Akio Fujita, Atsushi Ashida, Atsushi Nakahira
△	6	Thermal Diffusivity Measurement of TiNx Thin Films Using Thermoreflectance Technique 3	Aoyama Gakuin Univ.1, AIST 2　*Tetsuro Otsuka 1, Takashi Yagi 2, Naoyuki Taketoshi 2, Tetsuya Baba 2, Amica Miyamura 1, Yasushi Sato 1, Yuzo Shigesato 1
▲△	7	Deposition of nanostructured hydroxyapatite/TiO2 composites for biomedical application	Nanoarchitectonics Res Ctr. 1　*Lee Baek-Hee 1, Yoshiki Shimizu 1, Takeshi Sasaki 1, Naoto Koshizaki 1
△	8	Influence of Substrate Surface on Orientation of HAp Thin Film.	Dept. of Innov. Eng. Mater. Tokyo Inst. of Tech 1 , Tokyo Medical and Dental Univ. 2　*Takao Kobayashi 1, Wakana Hara 1, Wataru Tsuji 1, Kimihiro Yamashita 2, Mamoru Yoshimoto 1
△	9	Activation energy and frequency factor during Y2O3 film deposition process	Nagaoka Univ. Tech. 1　*Kawaguchi Shinnosuke 1, Namiki Keiichi 1, Ohshio Shigeo 1, Nishino Junichi 1, Saitoh Hidetoshi 1
△	10	Improvement of Deposition Rate in Y-Shape Filtered Arc Deposition Apparatus by Applying Duct Bias	Totohashi Univ. 1, Onward Ceramic Coating Co., LTD. 2　*Hikosaka Hiroki 1, Tanoue Hideto 1, Mashiki Takayuki 1, Takikawa Hirofumi 1, Hasegawa Hiroshi 2, Taki Makoto 2
	11	Zn3N2 thin film growth by RF-MBE (3)	Polytechnic Univ.　Kazuhiko Kakishita, Tomoyasu Tsubaki, Toshikazu Suda
	12	MBE growth of zinc nitride (Zn3N2) thin films	Kyoto Univ. Dept. ESE 1, Kyoto Univ. IIC 2 　*Ohshima Takayoshi 1, Fujita Shizuo 2
	13	Preparation of TixAlySizNsuper hard films deposited by 3-cathodes co-magnetron sputtering(2)	Aoyama Gakuin Univ. 1,AIST 2　*Yamaguchi Maho 1,Hattori Koichiro 2,Seino Yutaka 2,Miyamura Amika 1,Sato Yasushi 1,Shigesato Yuzo 1
	14	Influence of substrate temperature for crystal phase of reactive-sputtered tin-nitride films	EcoTopia Sci. Inst., Nagoya Univ.1, Dept. Eng., Nagoya Univ.2　Yasushi Inoue1, Nagahiro Saito2, Osamu Takai1
	15	Sequential epitaxial growth of Cu/Ru/ZrN trilayered interconnecting film on (111)Si and its surface morphology	Kitami Inst. Tech. 1, Takuma NCT 2　*Sakurai Junpei 1, Yanagisawa Hideto 1, Shinkai Satoko 2, Sasaki Katsutaka 1, Abe Yoshio 1
	16	Development of fabrication technology of an atomic mirror by atomic layer deposition	Osaka City Univ. 1　Fujimoto Toshihiko 1,Shiomi Yasutomo 1,*Kumagai Hiroshi 1,Kobayashi Ataru 1
	17	Properties of silver front surface mirror	Central Glass Co., Ltd.　*Omoto Hideo 1, Takamatsu Atsushi 1
▲	18	Gold thin films by photochemical deposition	Nagoya Inst. of Tech. 1　*A. Senthil kumaran 1, Ichimura Masaya 1
	19	Evaluation of adhesion between oxide film and Au film	Nagaoka Univ. of Tech. 1　Kuramoto koutarou 1, Kishimoto Shinichi 1, Ohshio Shigeo 1, Nishino Jyunichi 1, Saitoh Hidetoshi 1
	20	Comparison of agglomeration behavior between Al-doped Ag and Au-doped Ag thin films	Kitami Institute of Technology　*Keita Sugawara, Midori Kawamura, Yoshio Abe, Katsutaka Sasaki
	21	Preparation of Mg-Ni Alloy Thin Films by Sputtering	Niigata Univ. 1　*Kimura Daisuke 1,Aikou Takashi 1,Shimizu Hidehiko 1,Maruyama Takeo 1,Iwano Haruo 1,Kawakami Takahiro 1
	22	Adhesion Fracture of a Multi-layer Au Thin Film Mixed with Sb,W and Cr	Kanto Gakuin University　Tetauya Hosaka
6.4 Novel Materials for Thin Films
August 29 (Tue.)
29p-P3-　/ II
		Poster Session 29p-P3-1〜22　13:00〜15:00
	1	Visible-light sensitivity for N-doped ZnO films prepared by reactive magnetron sputtering	Toyota Central R&D Labs.　*Yoshitaka Nakano, Takeshi Morikawa, Takeshi Ohwaki
	2	Growth of ZnO-thin film UHV Sputtering method (I)	Tokyo Denki Univ. 1　*Abe Takuya 1, Fujii Wataru 1, Matsuo Yohei 1, Shinoda Hiroyuki 1, Mutsukura Nobuki 1
	3	Growth of ZnO thin film by UHV sputtering method	Tokyo Denki Univ.　Wataru Fujii 1,Takuya Abe 1,Yohei Matsuo 1,Hiroyuki Shinoda 1,Nobuki Mutsukura 1
	4	Improvement of the resistivity distribution of room temperature deposited ZnO thin films by a strong field sputtering technique	Nagoya University 1, IMRA Material R&D Co., Ltd 2　*Ohta Isao 1, Yokouti Kohei 1, Yanagi Yousuke 2, Itou Yoshitaka 2, Ikuta Hiroshi 1
	5	Effect of ZnO thin films by hydrogen plasma	Toyo Univ. 1,Microdenshi 2,Consultant Office PTC 3,　*Sata Youhei 1,Nakayama Takamichi 2,Kashiwagi Kunihiro 1,Takizawa Tsutomu 2,Sakamoto Yuichi 3,
	6	Mechanism of photo-induced crystallization of thin films in ZnO system with vacuum ultraviolet light	Graduate School of Engineering, Nagoya Univ. 1, EcoTopia Science Inst., Nagoya Univ. 2　*Hieda Junko 1, Saito Nagahiro 1, Inoue Yasushi 2, Takai Osamu 2
	7	Examination of ITO Thin Films Deposited by Substrate Bias Sputtering	Niigata Univ. 1,TIP 2　*Morishita Kazuya 1,Takeuchi Masaki 1,Umedu takeshi 1,Nakata Yuusuke 1,shimizu hidehiko 1,Maruyama Takeo1, Hoshi Youichi 2
	8	Improvement of electrical conductivity for FTO films by SPD	Fujikura MTL 1　Ohmori Kiwako 1, Usui Hiroki 2, Goto Kenji 3, Kobayashi Kazuharu 4
	9	Improvement of optical property for FTO film thorough heat-treatment in various atmospheres	Fujikura Ltd. MTL　*Goto Kenji 1, Ohmori Kiwako 1, Usui Hiroki 1, Kobayashi Kazuharu 1
	10	Properties of transparent conducting amorphous ZnO-In2O3 films deposited on organic substrates	Graduate School of Advanced Technology and Science, The Univ. of Tokushima　*Suketa Hiroshi 1, Takita Keisuke 1, Takada Daisuke 1, Shimomura Koji 1, Tominaga Kikuo 1, Murai Keiitiro 1, Moriga Toshihiro 1
	11	Preparation of β-Ga2O3 Thin Films by Sol-Gel Method and UV Photodetection Properties	Ishinomaki Senshu Univ.　Kokubun Yoshihiro, Miura Kasumi, Endo Fumie, Nakagomi Shinji
	12	Deposition of Zn2SnO4 thin films by RF magnetron sputtering (III)	Tech. Research Inst. of Osaka Pref. 1　Satoh Kazuo 1, Kakehi Yoshiharu 1, Murakami Shuichi 1, Okamoto Akio 1, Moriwaki Kousuke 1
	13	Preparation and analysis of CuxGa1-xO films prepared by the RF magnetron sputtering.	Waseda Univ.1　*Norikazu Takeuchi 1, Hiroki Ishikawa 1, Yuki Mishio 1, Toshio Takeuchi 1, Yoshizi Horikoshi 1
	14	Epitaxial growth of CuScO2 thin films using two-step growth and post-annealing methods	TRI, Osaka Prefecture 1　*Kakehi Yoshiharu 1, Satoh Kazuo 1
	15	Development of New Algorithm for Oxides with Oxygen Defects Based on Tight-Binding Quantum Chemical Molecular Dynamics	Dept. Appl. Chem., Tohoku Univ. 1, JST-PRESTO 2, NICHe, Tohoku Univ. 3　*Endou Akira 1, Jung Sun-ho 1, Onuma Hiroaki 1, Ishimoto Ryota 1, Tsuboi Hideyuki 1, Koyama Michihisa 1, Takaba Hiromitsu 1, Kubo Momoji 1,2, Del Carpio Carlos A. 1, Miyamoto Akira 1,3
	16	Room temperature deposition of Mn-doped ITO films	Kyoto Univ. 1　Tanabe Kouhei 1,Nakamura Toshihiro 1,Tachibana Kunihide 1
	17	Electric-pulse-induced resistance change in (Pr,Ca)MnO3 films deposited by MOCVD (II)	Kyoto Univ. 1 　*Homma Kohei 1,Nakamura Toshihiro 1,Tachibana Kunihide 1
	18	Fabrication of SrZrO3 Thin Films by Liquid Delivery MOCVD	*Kawamura Hiroshi 1,Hashimoto Kazutaka 1,Otani Yohei 2,Uchiyama Kiyoshi 1,Shiosaki Tadashi 1,Mizuno Osamu 3,Park Jin-Joo 3 　*Kawamura Hiroshi 1,Hashimoto Kazutaka 1,Otani Yohei 2,Uchiyama Kiyoshi 1,Shiosaki Tadashi 1,Mizuno Osamu 3,Park Jin-Joo 3
	19	Characterization of LaTiO3 thin films on termination controlled SrTiO3(100) substrates	Univ. of Tokyo 1, 2　*Kondo Hiromasa 1, Ohnishi Tsuyoshi 2, Shibuya Keisuke 2, Lippmaa Mikk 2
	20	Preparation of SrAl2O4 Thin Films with Control of Substrate Temperature	Niigata Univ. 1　*Imai Takaki 1,Watanabe Yuuji 1,Shimizu Hidehiko 1,Maruyama Takeo 1,Iwano Haruo 1,Kawakami Takahiro 1
	21	Optimize of In transport conditions using hydrogen radicals	Tokyo University of Agri.&Tech. 1,Nippon Institute of Tech 2　*Takeuchi Ryota 1,Satoh Naru 1,Aoyagi Minoru 2,Kamisako Koichi 1
	22	Fabrication and Evaluation of InN thin films using transport phenomenon by hydrogen radicals	Tokyo Univ. of Agri. and Tech. 1,Nippon Inst. of Tech. 2　*Naru Satoh 1,Ryota Takeuchi 1,Minoru Aoyagi 2,Koichi Kamisako 1
6.4 Novel Materials for Thin Films
August 29 (Tue.)
29p-P4-　/ II
		Poster Session 29p-P4-1〜24　15:30〜17:30
	1	X-TEM Observation of Orientation-Selective-Epitaxial CeO2/Si(100) Structures	Iwaki Meisei Univ. 1　*Inoue Tomoyasu 1, Saito Tomohiro 1, Shida Shigenari 1
	2	Effects of annealing ambient on electrical properties of the CeO2 films prepared by MOCVD	Hosei Univ. 1,Semiconductor Process Labotory Co. 2,Canon ANELVA Co. 3　*Kazunari Tagui 1,Keiichi Nakamura 1,Masatugu Ogawa 1,Kiyotaka Saito 1,Setu Suzuki 2,Keiji Ishibashi 3,Yasuhiro Yamamoto 1
	3	Structural properties of Bi2O3 films prepared by reactive of rf magnetron sputtering	Tokai Univ.1　Kamimura Takahisa 1,Murata Yoshimasa 1,*Okimura Kunio 1
	4	Structural and Electric Properties of SrZr1-xYxO3/SrTiO3 Thin Film Prepared by Pulsed Laser Deposition	Tokyo University of Science 1,　S. Okada 1, ○T. Higuchi 1, S. Shimizu 1, T. Yoshida 1, Y. Kobayashi 1, T. Hattori 1, T. Tsukamoto 1
	5	Temperature Dependence of Electrical Characteristics of Au/Nb2O5/Nb Structure	Nihon Univ. 1, Hitachi AIC Inc. 2　*Masanori Ikeda 1, Kanji Yaginuma 1, Hirofumi Shimizu 1, Yoshiki Hama 2, Yoko Shibasaki 2, Hideharu Endo 2, Kazuyuki Iida 2
	6	Properties of tungsten oxide thin films on flexible substrates	Sasebo National College of Tech. 1　Hiroharu Kawasaki 1, Tamiko Ohshima 1, Yoshihito Yagyu 1, Yuuji Ikeda 1, Yoshiaki Suda 1
	7	Improvement of deposition rate of Y2O3 films by atmospheric CVD method with moisture addition	Nagaoka Univ. of Tech. 1,SHOWA DENKO K.K. 2　Mesaki Takuya 1,Ueda Takashi 2,Kawaguchi Shinnosuke 1,Ohshio Shigeo 1,Nishino Junichi 1,Saito Hidetoshi 1
	8	Synthesis and evaluation of SiO2 films with TEOS/O3 using CVD technique operated under atmosphere	Nagaoka Univ. of Tech. 1　*Kishimoto shinichi 1, Ohshio Shigeo 1, Nishino Junichi 1, Saitoh Hidetoshi 1
	9	Dielectric constant of HfO2-ZrO2 thin films	Nagaoka Univ. Tech. 1　*Maruyama Hayato 1, Tsuchida Kazuyuki 1, Oshio Shigeo 1, Nishino Junichi 1, Saitoh Hidetoshi 1,
	10	Effects of Annealing on Silicon Oxide Thin Films deposited by Reactive Sputtering(II)	Meiji Univ. 1　*T. Tsuda 1, K. Nakagawa 1, H. Matsumoto 1, S. Matsumoto 1
	11	Time dependence of internal stress and molecule structure with long-term in SiO2 optical thin film	Tokai Univ. 1, SHINCRON CO.,LTD. 2 　*Arai Kentaro 1, Kobayasi Daisuke 1, Murotani Hiroshi 1, Wakaki Moriaki 1, Matsusita Akinori 2
	12	Light scattering characteristic of TiO2 optical thin films-2	Tokai Univ. 1,SHINCRON CO.,LTD. 2　*Kudo Takefumi 1,Murotani Hirosi 1,Kobayasi Daisuke 1,Wakaki Moriaki 1,Matusita Noriaki 2
	13	Relation of internal stress and film structure of TiO2 optical thin film	Tokai Univ. 1. SHINCRON Co.,Ltd. 2　*Kobayashi Daisuke 1.Arai Kentaro 1.Murotani Hiroshi 1.Wakaki Moriaki 1.Matsushita Akinori 2.
	14	Stress of SiOx barrier film dependence on evaporation materials	Canon Optron Inc. 1, Hitec Co.Ltd. 2　*Horie Haruhiko 1, Inomata Takashi 2, Muro Koichi 1
	15	Room Temperature Deposition of Crystalline Thin Films on Nano-Scaled Substrates by DC Magnetron Sputtering Technique	Graduate School of Eng., Osaka Univ. 1　*Harunaka Yamaguchi 1,Tomohisa Izumi 1,Osamu Maida 1,Toshimichi Ito 1
	16	Deposition of titanium oxide thin films on trench structures in supercritical carbon dioxide	Sophia Univ. 1　*Kano Fuyuki 1, Uchida Hiroshi 1, Yui Kazuko 1, Koda Seiichiro 1
	17	Preparation of porous titanium oxide film through evaporation-induced self-assembly using triblock copolymer	Nagoya Univ., 1, Ecotopia Science Inst. 2　*Makihara Masaki 1, Yoshida Kenta 1, Sakata Makoto 1, Nishibori Eiji 1, Aoyagi Shinobu 1, Tanaka Nobuo 2
	18	Optical absorption property of TiO2/WO3 multilayer films prepare by Pulse Laser Deposition and localization of structures by TEM	Nagoya Univ. 1,EcoTopia Science Inst. Nagoya Univ. 2　*Shusuke Otsuki 1,Takahiro Nanbara 1,Kenta Yosida 1,Nobuo Tanaka 2
	19	Evaluation of density of TiO2 film using XRR method	Nagaoka　Univ.　of Tech　*T. Nagao 1,S. Ohshio 1,J. Nishino 1,H. Saitoh 1
	20	Thickness dependence of hydrophilic TiO2 films by Plasma-CVD	Ibaraki Univ. 1　Yasuyuki Ishikawa 1, Toru Miyamura 1, Satoshi Yamauchi 1
	21	Effect of substrate temperature on epitaxial orientation of Rh thin film on A-plane sapphire sputtered under the high-deposition-rate condition	Kitami Institute of Technology　*Kato Kiyohiko, Sasaki Katsutaka, Abe Yoshio
	22	Deposition and its electrical properties of SiCN films by HW-CVD method using organic liquid materials	Kyushu Inst. of Tech. 1,　*Hayashi Yuji 1,Nakayamada Takashi 1,Matsuo Kousuke 1,Izumi Akira 1,
	23	Corrosion resistance of SiCN films deposited by HWCVD method with organic liquid materials (2)	Kyushu Inst. of Tech. 1,TOYO STAINLESS POLISH INDUSTRY CO.,LTD. 2,　*Nakayamada Takashi 1,Matsuo Kousuke 1,Hayashi Yuji 1,Kadotani Yutaka 2,Izumi Akira 1,
	24	Preparation of Nitrogen or Oxygen doped GST Thin Film for Phase Change Random Access Memory by RF Magnetron Sputtering	ULVAC,Inc.　*Kikuchi Shin ,Oh Dong-Yong ,Kimura Isao ,Nishioka Yutaka ,Ueda Masahisa ,Endo Mitsuhiro ,Kokaze Yutaka ,Suu Koukou
6.5 Surface Physics and Vacuum
August 31 (Thu.) 9:30〜17:30
31a-X-　/ II
	1	Symmetry of molecular flows through the pipe of an arbitrary shape (II)	ULVAC Inc. 1　*Yoshiro Kusumoto 1
	2	Relationship between density and gas desorption of MgO film	Nagaoka Univ. Tech　*M.Hamaya 1,S.Kawaguchi 1,S.Ohshio 1,J.Nishino 1,H.Saitoh 1
	3	Evaluation of Self Assembled Monolayer by Absorption of Perfluoroalkylolefin on the Si(111)7x7 Surface	Nagoya Univ.　*Ryohei Sumii, Kaname Kanai, Kiyonori Saito, Yukio Ohuchi, Kazuhiko Seki
▲	4	Studies of Reaction of Si(111) Surface with Ethane	Nagoya Univ. 1, Japan Women's Univ. 2　*Risa Suryana 1, Ichimiya Ayahiko 2, Nakahara Hitoshi 1, Saito Yahachi 1
▲	5	Study on the anodizing behaviors of Ti at different potentials in a short time by subsequent treatment at a high voltage	AIST. 1, Tohoku Gauin. 2　Zhengbin Xia 1, *Hiroshi Nanjo 1, Ikuo Ishikawa 1, Motoaki Fujimura 2, Jun Onagawa 2
	6	Adhesion measurement for Cu and Al patterned wiring and electrode film	Ashikaga Inst. Tech.　Tsukamoto Yuji
		Break 11:00〜11:15
	7	Plasma resistance of surface treatment on aluminum	Yaskawa Electric Corporation 1　*Shinabe Shinji 1, Ota Nobuhiko 1
	8	Outgassing Properties of the CFRP with Multi-layer Nickel Plating	Yaskawa Electric Corp. 1　*Narita Hideo 1,Shinabe Shinji 1,Ota Nobuhiko 1
△	9	Durability Test of Hydrophilic Composite Made with Resin and Graphite	Mie Univ.1.　*Hironari Tomita 1,Keita Kayano 1,Yusuke Aoki 1,Shuhei Nakamura 1
	10	Temperature dependence of periodicity on self-ordered SiC surface nanofacet structures	RIES/Hokkaido　*Fujii
	11	Thermal Relaxation of One-Dimensional Gratings on Si(001)	Osaka Univ. 1　*Sudoh Koichi 1, Nakamura Jun 1, Iwasaki Hiroshi 1
		Lunch 12:30〜13:30
31p-X-　/ II
	1	Development on high resolution absolute work function electron microscope	Osaka Electro-Communi. Univ., Fundamental Electronics Research Inst.　Takanori Koshikawa, Tsuneo Yasue
	2	Resolution Limiting of LEEM/PEEM by MCP and Fluorecsent Screen	Osaka Electro-Commun. Univ 1　Shimizu Hiroshi 1, *Yasue Tsuneo 1, Koshikawa Takanori
	3	Observation of surface magnetization by spin-polarized low energy electron microscopy (SPLEEM)	Fundamental Electronics Research Inst., Osaka Electro-Communication Univ. 1,Department of Physics and Astronomy, Arizona State Univ. 2　*Suzuki Masahiko 1, Hashimoto Michihiro 1, Ueda Masato 1, Yasue Tsuneo 1, Koshikawa Takanori 1, Bauer Ernst 2
	4	Mapping of chemical bond states of Ag/Si(111) with synchrotron orbital radiation photoelectron microscope	OECU.1, JASRI.2, RIKEN.3, JAEA.4　*M Hashimoto 1, M Ueda 1, F-Z Guo 2, M Suzuki 1, T Kinoshita 2, K Kobayashi 2, S Shin 3, M Oura 3, T Takeuchi 3, Y Saito 4, T Matsushita 2, T Yasue 1, T Koshikawa 1
	5	Dynamic observation of Ag on In/Si (111) by LEEM	OECU 1　*Ueda Masato 1,Hashimoto Mitihiro 1,Suzuki Masahiko 1,Yasue Tuneo 1,Koshikawa Takanori 1
	6	Azimuth control of C60 monolayer using steps	NTT Basic Research Labs. 1　*Hibino Hiroki 1, Kobayashi Yoshihiro 1
	7	Photoemission Electron Microscopic Observation of Electrified SiO2 with Ion Implantation	Nano High Tech Research Center, Toyota Technological Inst. 1　* Hirokazu Fukidome 1, Masamichi Yoshimura 1, Kazuyuki Ueda 1
		Break 15:15〜15:30
	8	Quantum changes of tunneling current in Ge quantum dots on Si substrates induced by single electron transport	The Univ. of Tokyo 1, CREST-JST 2　Nakamura Yoshiaki 1,2, Watanabe Kentaro 1, Hatsugai Yasuhiro 1, Ichikawa Masakazu 1,2
△	9	Electric conductivity of Ge nanodots on an ultrathin SiO2 film with controlling confining barrier	CREST-JST 1, Sch. Sci., Univ. Tokyo 2, Sch. Eng., Univ. Tokyo 3　Nakayama Yasuo 1, Matsuda Iwao 2, Yamazaki Shiro 2, Hasegawa Shuji 2, Ichikawa Masakazu 1,3
	10	Manipulation of Ge quantum dots on ultrathin SixGe1-x oxide films using scanning tunnelint microscope tips	The Univ of Tokyo 1, CREST-JST 2　Akiko Masada 1, Hiroyuki Takata 1, Yoshiaki Nakamura 1,2, Masakazu Ichikawa 1,2
	11	Photoluminescence measurement of Si-capped Ge grown on the ultrathin Si oxide films	The Univ. of Tokyo 1, CREST-JST 2　*Nakamura Yoshiaki 1,2, Uchida Seiichi 1, Shklyaev Alex 1,2, Nobuki Shunichiro 1, Ichikawa Masakazu 1,2
	12	Observation of the quantum-confinement effect in individual β-FeSi2 nanoislands grown on Si(111) surfaces by STS	Tokyo Univ. 1,CREST-JST 2,Nagoya Univ. ESI 3　*Umeno Masafumi 1,Nakamura Yoshiaki 1,2,Suzuki Ryota1,Cho Sung-Pho 3,Tanaka Nobuo 3,Ichikawa Masakazu 1,2
	13	Agglomeration of ultra-thin amorphous Si films and formation of Si nanoclusters	Graduate School of Engineering, Nagoya Univ. 1, CCRAST, Nagoya Univ. 2　*Kondo Hiroki 1, Ueyama Tomoki 1, Sakai Akira 1, Ogawa Masaki 2, Zaima Shigeaki 1
	14	Structural Evaluation of Ge Nanowires on Si(113) by Grazing Incidence X-ray Scattering	Rigaku Corporation 1, NTT Basic Research Labs. 2　Kazuhiko Omote 1, Kawamura Tomoaki 2, Omi Hiroo 2
	15	Conductance of atom-sized contacts of Si	Dept. Mat. Sci.&Eng. 1,IIC, KyotoUniv. 2　*Iwanari Tomoki 1, Kurokawa Syu 2, Sakai Akira 2
6.5 Surface Physics and Vacuum
September 1 (Fri.) 9:30〜12:30
1a-X-　/ II
	1	Low-Dimensional Structure of Submonolayer Alkali Metals on Stepped Surfaces of Metals (II)	Ritsumeikan Univ. 1　*Ogawa Koji 1, Harada Shunsuke 1, Fujisawa Nobuyuki 1, Nakanishi Koji 1, Namba Hidetoshi 1
	2	Pd/Pt(111) surface structure by low energy ion beam scattering spectroscopy	Osaka　Pref.　Univ. 1,　　*Narihiro Eisuke 1,Umezawa Kenji 1,Nakanishi Shigemitsu 1
	3	O1s Analysis around Structural Transition Layer of Silicon Thermal Oxide Thin Film.	National Inst. of Advanced Sci. and Technol. (AIST)　Kurokawa Akira 1, *Odaka Kenji 1, Ichimura Shingo 1
	4	Correlation between translational kinetic energy of O2 and metastable oxygen adsorbates on Si(111)-7x7 surface -“In-situ” observation by means of high energy-resolution synchrotron radiation photoelectron spectroscopy	JAEA1, Univ. of Hyogo2, Osaka Pref. Univ.3　*Akitaka Yoshigoe1, Kousuke Moritani2, Eisuke Narihiro3, Yuden Teraoka1
	5	Emission kinetics of Si atom during initial oxidation on Si(001) surface (IX)：Room-temperature oxidation	IMRAM Tohoku Univ.　1　Ogawa Shuichi 1, Takakuwa Yuji 1
		Break 10:45〜11:00
▲	6	The Effect of Surface Treatments on Core-Level Shifts of Ba and Sr in Photoemission of Epitaxial (Ba,Sr)TiO3 Thin Films	Fujitsu Limited1, Fujitsu Lab. Ltd.2　*John David Baniecki12, Masatoshi Ishii12, Kazuaki Kurihara12, and Kazunori Yamanaka12
	7	Very low energy photoelectron spectra of CO/Cu(001):energy loss structure through excitation of FR mode	Dept. of Appl. Phys., Tohoku Univ. 1, JST CREST & Dept. of Mater. Sci., Univ. of Tokyo 2, JASRI/SPring-8 3, RIEC, Tohoku Univ. 4, and JAIST 5　Kei Hayashi 1, Ryuichi Arafune 2, Shigenori Ueda 3, Yoichi Uehara 4, Sukekatsu Ushioda 5
	8	Very low energy photoelectron spectra of the oxygen covered Cu(001) Surface	JST CREST & Dept. of Mat. Sci. Univ. of Tokyo 1, Dept. of Appl. Phys. Tohoku Univ. 2, RIKEN 3, RIEC Tohoku Univ. 4, JAIST 5　Ryuichi Arafune 1, Kei Hayashi 2, Noriaki Takagi 1, Maki Kawai 1 3, Yoichi Uehara 4, Sukekatsu Ushioda 5
△	9	Adsorption structure and work function of amino acid on a Cu(110) surface	AEMC NIMS 1　*Yagyu Shinjiro 1, Yoshitake Michiko 1, Chikyow Toyohiro 1
	10	Growth of Atomically Flat Epitaxial Alumina Thin Films	National Inst. Materials Sci.　*Yoshitake Michiko 1, Nemsak Slavomir 1, Lykhach Yaroslava
	11	Influence of Crystallinity on the Potential Alignment at Metal - Allumin Film Interfaces	National Inst. Materials Sci.　*Yoshitake Michiko 1, Song Weijie 1
6.6 Probe Microscopy
August 30 (Wed.) 9:00〜17:30
30a-Y-　/ II
△	1	Observation of Si(111)-7×7 structure using Non-contact SNDM with atomic resolution	R.I.E.C. Tohoku Univ. 1　*Hirose Ryusuke 1, Cho Yasuo 1
△	2	Observation of Stored Charge Distribution in FG type Flash Memory by SNDM using Conductive Carbon Nanotube Probe	RIEC Tohoku Univ. 1, Fujitsu Lab. Ltd. 2　*Kenya Ishikawa 1,Koichiro Honda 2, Yasuo Cho 1
△	3	Anisotropic electron standing wave induced by the self-organized of Glycine molecules on Cu(100)	Inst. of Appl. Phys. Univ. of Tsukuba 1,CREST-JST 2,21stCOE 3,IMRAM Tohoku Univ. 4　*Kanazawa Ken 1 2 3, Konishi yasuaki 1 2 3, Sainoo Yasuyuki 4, Yoshida shoji 1 2 3, Takeuchi Osamu 1 2 3, Shigekawa Hidemi 1 2 3
	4	STM Observation and FEM analysis of electron standing wave at Si(111) √3x√3-Ag surfaces	Tokyo Inst. of Tech　*Satoshi Minamoto 1, Takeshi Ishidsuka 1, Hiroyuki Hirayama 1
	5	Nano-scale Surface Analysis using SR-STM system	Osaka Univ. 1,RIKEN/SPring-8 2,ICORP(JST) 3,Osaka Prefecture Univ. 4, JASRI/SPring-8 5,Nanomaterials Institute for Materials Science 6　Takahashi Koji 1,2, Saito Akira 1,2,3, Takagi Yasumasa 2, Kitamoto Katsuyuki 2,4, Hanai Kazuhisa 2,4, Tanaka Yoshito 2, Miwa Daigo 2, Yabashi Makina 5, Ishikawa Tetsuya 2, Shin Shik 2, Kuwahara Yuji 1,2,3, Aono Masakazu 3,6
	6	Quasi chemical shift in x-ray absorption spectra observed with synchrotron radiation excited scanning probe microscopy	JASRI 1, Univ. of Manchester 2, Daresbury Lab. 3　*Ishii Masashi 1, Hamilton Bruce 2, Poolton Nigel 3
		Break 10:30〜10:45
	7	Origin of the Ultrafast Photo-induced Phenomena in GaNAs Probed by Femtosecond Time-resolved STM	Inst. of Appl. Phys., Univ. of Tsukuba 1　Terada Yasuhiko 1, Kondo Hiroyuki 1, Aoyama Masahiro 1, Takeuchi Osamu 1, Shigekawa Hidemi 1
	8	STM light emission from nano-structures of In on Si(111) surface	Dept.of Mat. Sci&Eng. Tokyo Inst. Tech　1,Dept.of Cond. Matter Physics. Tokyo Inst. Tech 2　Chiba Ayako 1,Imada Hiroshi 2,Yokoya Maki 2,Yamamoto Naoki 2
	9	Local Characterization of Photovoltage on Polycrystalline Silicon Solar Cells by KFM with Piezo-resistive Cantilever	IIS, Univ. of Tokyo 1,Graduate school of engineering, Nagoya Univ. 2　*Takihara Masaki 1,Igarashi Takatoshi 1,Ujihara Toru 2,Takahashi Takuji 1
	10	Real-space imaging of carrier flow in the forward biased p-n junction by laser combined Scanning Tunneling Microscopy	Univ. of Tsukuba, Inst. of Appl Phys, CREST　*S. Yoshida 1, Y. Kanitani 1, R. Oshima 1, O. Takeuchi 1, Y. Okada 1 and H. Shigekawa 1
	11	One-dimensional Schottky barrier formed by metal nanowires on silicon substrate	NIMS 1, JST ICORP 2, Univ. of Tsukuba 3　*Kubo Osamu 1,2, Shingaya Yoshitaka 1,2, Aono Masakazu 1,2, Nakayama Tomonobu 1,2,3
		Lunch 12:00〜13:00
30p-Y-　/ II
	1	Currents through single molecular junctions of Au/hexanedithiolate/Au measured by repeated formation of break junctions in STM under UHV: Effect of conformational change from gauche to trans	Tokyo Inst. of Technology　*Ayano Nishikawa, Masamichi Fujihira
	2	Forces and conductances in an Au/1,4-benzenedithiolate/Au junction	Tokyo Institute of Technology　*Shintaro Fujii, Masamichi Fujihira
	3	Non-contact AFM Studies of Organic Crystals of Pentacene and Rubrene	Tohoku Univ.1, JEOL 2　Masahumi Sakata 1, Akito Sasaki 1, Yoshiki Imamura 1, Tomoshige Sato 2, Shinichi Kitamura 2, Kingo Itaya 1
	4	Observation of photoactive-surface phonomena of azobenzene on Pt(111) by STM II	Hokkaido Univ.　*Morita Daiji, Yamashiro Takashi, Morita Ryuji, Yamashita Mikio
	5	Photochemical reaction of acetone on TiO2(110) observed by STM	Kobe Univ. 1, JST-CREST 2　*Msa-aki Yasuo 1, Akira Sasahara 1,2 , Hiroshi Onishi 1
	6	DNA observation with STM in a solution	Osaka Univ. 1.　Hiroshi Matsuura 1, Kouji Suzuki 1, Akihiko Takagi 1, Takuya Matsumoto 1, Tomoji Kawai 1.
	7	High-Resolution Imaging of Biomolecules in Liquid by Frequency-Modulation Atomic Force Microscopy	Dept. of Electronic Sci. & Eng. 1, Int'l Innovation Center, Kyoto Univ. 2, AIST 3　*Takashi Horiuchi 1, Kei Kobayashi 2, Yoshiki Horata 3, Kazumi Matsushige 1, Hirofumi Yamada 1
	8	Imaging of protein molecules in water using frequency detection	ISIR, Osaka Univ.　*Matsumoto Takuya 1, Kawahara Toshio 1, Yamaguchi Hitomi 1, Kawai Tomoji 1
		Break 15:00〜15:15
	9	Solvation Force Measurements by Dynamic Force Microscopy	JST/Adv. Meas. & Analysis 1, Dept. of Electronic Sci. & Eng., Kyoto Univ. 2, Int'l Innov. Center, Kyoto Univ. 3, AIST 4　*Kimura Kenjiro 1,2, Horiuchi Takashi 2, Kobayashi Kei 1,3, Hirata Yoshiki 4, Yamada Hirofumi 1,2, Matsushige Kazumi 2
	10	Reversible Control of Hydrophilicity/Hydrophobicity of AFM Probe Using Photoisomerization	Osaka Univ.1 , CREST-JST2　*Yoshihiro Aburaya1,Yanjun Li1,2,Yoshitaka Naitoh1,2,Masami Kageshima1,2, Yasuhiro Sugawara1,2
	11	AFM observation of nitrophenyl modified diamond surfaces	AIST Diamond Research Center 1, NEDO 2　*Uetsuka Hiroshi 1,2, Shin Dongchan 1,2, Tokuda Norio 1, Nebel E. Christoph 1,2
	12	KFM study of surface charge and polarization of ferroelectric material.	Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, Int’l Innovation Center, Kyoto Univ. 2　Nakai Akifumi 1, Satho Nobuo 1, Kobayashi Kei 2, Horiuchi Toshihisa 1, Yamada Hirofumi 1, Matsushige Kazumi 1
	13	Influence of surface strain field around the Si(001) step on the phase observed by LT-NC-AFM	Osaka Univ. 1　Yoshitaka Naitoh 1, Hikaru Nomura 1, Masami Kageshima 1, Yasuhiro Sugawara 1
	14	Electrostatic Force Microscopy on Insulating Surface CaF2(111)/Si(111) by using LT-NC-AFM	Osaka University　Kawasaki Kenichiro 1, Nomura Hikaru 1, Naitoh Yoshitaka 1, Kageshima Masami 1, Sugawara Yasuhiro 1
	15	Tip-Sample Distance and Bias-Voltage Dependence of Dissipative Energy on Si(111) Surface by LT-NC-AFM	Osaka Univ. 1　*Hikaru Nomura 1, Kenichiro Kawasaki 1, Yoshitaka Naitoh 1, Masami Kageshima 1, Yasuhiro Sugawara 1
	16	Interaction of hydrogen with a Pd/Si(110) surface	Nano High-Tech Research Center, Toyota technological Inst. 1　*Yutaka Ohira 1, Masamichi Yoshimura 1, Kazuyuki Ueda 1
	17	Hydrogen adsorption on Fe ultrathin films grown on Ni(111)	AIST 1　*An Bai 1, Fukuyama Seiji 1, Yokogawa Kiyoshi 1
6.6 Probe Microscopy
August 31 (Thu.) 9:30〜17:05
31a-Y-　/ II
	1	Thermal-drift-compensated SPM measurements at room temperature using the atom-tracking and feed-forward techniques	Osaka Univ. 1, JST-PRESTO 2　Takashi Namikawa 1, Yoshiaki Sugimoto 1, Kazutoshi Mizuta 1, Kenichi Morita 1, OscarCustance 1, *Masayuki Abe 1,2, and Seizo Morita 1
	2	Interchange vertical manipulation using non-contact atomic force microscopy	Osaka Univ. 1, JST-PRESTO 2　*Sugimoto Yoshiaki1, Abe Masayuki1,2, Custance Oscar1, Morita Seizo1
▲	3	Single-atom chemical recognition using room-temperature dynamic force spectroscopy	Osaka Univ. 1, JST-PRESTO 2　Sugimoto Yoshiaki1, Abe Masayuki1,2, Custance Oscar1, Morita Seizo1
	4	High-resolution imaging and manipulation on KBr(100) at Low Temperature NC-AFM	Graduate School of Engineering, Osaka University 1,JST-PRESTO 2　*Yusaku Yamada 1,Noriaki Oyabu 1,Atsushi Ishiyama 1,Masayuki Abe 1,2,Oscar Custance 1,Seizo Morita 1
	5	Nano-lithography of Si by using AFM anodization (II)	Tokyo Univ. of Science 1　*Takahashi Naota 1, Harako Susumu 1, Xinwei Zhao 1
	6	Method for making patterns using silica beads	Tokyo Inst. of Technology　*Akiyama Miki 1, Fuhita Mitsuhiro 1, Fujihira Masamichi 1
		Break 11:00〜11:15
	7	Performance Estimation of Phase Modulation Atomic Force Microscopy(PM-AFM) with Q-control Method	Osaka Univ. 1,CREST,JST 2　*Kobayashi Naritaka 1,Yan Jun Li 1,2,Naitoh Yoshitaka 1,2,Kageshima Masami 1,2,Sugawara Yasuhiro 1,2
	8	Detection of Photo-induced Force by FM Detection-based Dynamic Force Microscopy	Dept. of Electronic Sci. & Eng., Kyoto Univ. 1, Int'l Innovation Center, Kyoto Univ. 2, Nikon Corporation 3　N. Satoh 1, K. Kobayashi 2, S. Watanabe 3, T. Fujii 3, H. Yamada 1, K. Matsush ige 1,2
	9	Suppression of Photothermal Expansion by Polarization Modulation in STM Nano-Spectroscopy	Univ. of Tokyo 1, CREST-JST 2, Toshiba 3　*Yutaka Mera 1 2, Tatsuo Izumi 3, Takayuki Fujiwara 1, Koji Maeda 1 2
	10	STM photo-absorption spectroscopy using a Fourier transform spectrometer	The Univ. of Tokyo 1, JST-CREST 2　*Naruse Nobuyasu 1,2 Mera Yutaka 1,2 Maeda Koji 1,2
	11	Development of STM-cathodoluminescence spectroscopy and its application to n-GaAs(110) cleaved surface	The Univ. of Tokyo 1, CREST-JST 2　*Watanabe Kentaro 1, Nakamura Yoshiaki 1,2, Ichikawa Masakazu 1,2
		Lunch 12:30〜13:30
31p-Y-　/ II
	1	Evaluation of Domain Boundary of Piezo/Ferroelectric Material by Ultrasonic Atomic Force Microscopy
	2	Development of DW-CNT AFM probe	Daiken Chemical Co., Ltd 1,Osaka Pref. Univ. 2　*Yamanaka Shigenobu1,Okawa Takashi1,Akita Seiji2,Nakayama Yoshikazu2
	3	High-resolution profile imaging of steep grooves with a carbon nanotube tip-STM	Grad. Sch. Eng., Osaka Univ. 1, ISIR Osaka Univ. 2, Grad. Sch. Sci., Univ. of Tokyo 3　*Motoyoshi Kenji 1, Kishida Masaru 1, Konishi Hirofumi 1, Murata Yuya 1, Tomita Kazuhiro 1, Kimura Takehiko 1, Okamoto Kazumasa 2, Matsui Yoshinori 2, Tagawa Sei-ichi 2, Yoshimoto Shinya 3, Kubo Keisuke 3, Hobara Rei 3, Matsuda Iwao 3, Hasegawa Shuji 3, Honda Shin-ichi 1, Katayama Mitsuhiro 1
	4	Electrical transport in a CoSi2 nanowire measured by metal-coated carbon nanotube tips	Grad. Sch. Eng., Osaka Univ. 1, Grad. Sch. Sci., Univ. of Tokyo 2 　*Murata Yuya1, Kishida Masaru1, Konishi Hirohumi1, Motoyoshi Kenji1, Tomita Kazuhiro1, Kimura Takehiko1, Yoshimoto Shinya2, Kubo Keisuke2, Hobara Rei2, Matsuda Iwao2, Hasegawa Shuji2, Honda Shin-ichi1, Katayama Mitsuhiro1
	5	Surface Anisotropic Conductivity and its Temperature Dependence Measured by 4-tip STM	Tokyo Univ. 1　*Hobara Rei 1, Nagamura Naoka 1, Yoshimoto Shinya 1, Matsuda Iwao 1, Hasegawa Shuji 1
	6	Development of a multi-probe AFM and detection of interaction forces between the probes	Kyoto Univ. 1,International Innovation Center, Kyoto Univ. 2,Nikon Corporation 3,CREST 4　*Tsunemi Eika 1,Satoh Nobuo 1,Kobayashi Kei 2,Watanabe Shunji 3,Fujii Tohru 3,Matsushige Kazumi 1,Yamada Hirofumi 1,4
	7	Development of Integrated Control System for Multiple-scanning-probe Microscope	NIMS 1, Univ. of Tsukuba 2, HORIBA,Ltd. 3, JST ICORP 4 　*Seiji Higuchi 1,2,3,Takashi Komatsubara 3, Olivier Laurent 3, Seiichiro Yoshioka 3, Tomonobu Nakayama 1,2,4
		Break 15:15〜15:30
	8	Fabrication of Insulator-coated Carbon Nanotube/Ti Probe and Evaluation of Electric Properties	NIMS 1, ICORP JST 2　Tomimoto Hiroyuki 1, Nakayama Tomonobu 1,2
	9	Tip shape characterization of carbon nanotube probe using Si nanostructure	NTT Basic Research Labs. 1, NTT-ATN 2　*Nagase Masao 1, Kurihara Kenji 2, Yamaguchi Hiroshi 1
	10	Development of micro cantilever for resonance mode in liquid	Seiko Instruments Inc.　1　*M Shigeno 1,O Matsuzawa 1,A Nihei 1,N Watanabe 1,Y Shirakawabe 1,A.Inoue 1
	11	Study of the growth mechanism of WOx whisker on tungsten tip	Hokkaido Univ. 1　Mina Jonishi 1, Taiichi Takezaki 1, Agus Sbagyo 1, Kazuhisa Sueoka 1
	12	Synthesis and characterization of an insulator-coated metal tip with a nano-scale conductive region at the apex	Grad. Sch. Eng., Osaka Univ. 1, Res. Center for UHVEM, Osaka Univ. 2　*Tomita Kazuhiro 1, Konishi Hirofumi 1, Kishida Masaru 1, Murata Yuya 1, Motoyoshi Kenji 1, Kimura Takehiko 1, Jung-Goo Lee 2, Mori Hirotaro 2, Honda Shin-ichi 1, Katayama Mitsuhiro 1
	13	Tip characterizer for atomic force microscopy III	RIIF-AIST　*Hiroshi Itoh, Toshiyuki Fujimoto, Shingo Ichimura