| 14 Amorphous and Microcrystalline Materials |
| 14.1 Fundamental
Properties and Evaluations |
| August 31 (Thu.) 9:00`12:00 |
| 31a-B-@/ II |
| |
1 |
Temperature dependences of fluorescence intensities
in Eu3+ doped Al2O3-SiO2 glasses |
Fukui Univ. Tech. 1@*Uchida Kenji 1, Yoshikuni
Jyunpei 1 |
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2 |
Study on Bi state in Bi-doped silica glass by using
XPS |
Inst. Laser Engineering 1@Yasushi FUJIMOTO 1, Masahiro
NAKATSUKA 2 |
| |
3 |
Dependence of CL intensity of silica glass on electron
beam current. |
Shibaura Inst. Tech. 1@*Harada Takuya 1, Nishikawa
Hiroyuki 1 |
| |
4 |
Structure and photoluminescence properties of silica
aerogel |
Kobe Univ 1,2, SORST, JST 3@Nakazaki Yusuke 1,
Uchino Takashi 2,3 |
| |
5 |
Structure and photoluminescence properties of fumed
silica reacted with alkylaluminum |
Kobe Univ.@*Yoshikawa Gaku 1,Uchino Takashi 2 |
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6 |
Effect of Suppression of Devitrification by Chlorine-containing
Silica Glass |
Fukui Nat. Col. of Technol. 1, Univ. of Fukui 2@*HORII
Naohiro 1,2, KAMIDE Mitsuru 1, SUENAGA Madoka 1, INOUYE Akihiro 1, KUZUU
Nobu 2 |
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Break 10:30`10:45 |
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7 |
Molecular Dynamics Study on Structure of Interface
Formed by Binding Flat Silica Glass Surfaces at High Temperature |
Fukui Univ. 1, Fukui Univ. 2@*Tanaka Mitsuya 1,
Kuzuu Nobu 2 |
| |
8 |
Interstitial N2 molecules in amorphous
SiO2 |
JST 1, AKE Co. Ltd. 2, Univ. Latvia 3, TITech 4@Kajihara
Koichi 1, Takimoto Yasuyuki 2, Hirano Masahiro 1, Skuja Linards 1,3, Hosono
Hideo 1,4 |
| |
9 |
Fabrication of optical waveguide in glass by YAG
laser irradiation |
Nagaoka Univ. 1, Tohoku Univ. @*Ihara Rie 1, Honnma
Tuyoshi 1, Fujiwara Takumi 2, Komatsu Takayuki 1 |
| |
10 |
Morphology of fresnoite type crystal line pattern
fabricated by laser local heating |
Nagaoka Univ. Tech. 1, Tohoku Univ. 2@*Honma Tsuyoshi
1, Benino Yasuhiko 1, Fujiwara Takumi 2, Komatsu Takayuki 1 |
| |
11 |
Structure and photoconductivity of amorphous SiO
thin films |
Kobe Univ.1,2@*Koyanagi Emi 1. Takashi Uchino 2 |
| 14.1 Fundamental
Properties and Evaluations |
| September 1 (Fri.) 9:00`13:00 |
| 1a-B-@/ II |
| |
1 |
Activation of energy of CVD process during yttria
film growth with Y(DPM)3 |
Nagaoka Univ. of Tech.@*Morimoto Hiromi 1, Kawaguchi
Shinnosuke 1, Ohshio Shigeo 1, Nishino Junichi 1, Saitoh Hidetoshi 1 |
| ’ |
2 |
Evaluation of thin film coating for surface of
ceramic |
Nagaoka Univ. of Tech.@*Morimoto Hiromi 1, Kawaguchi
Shinnosuke 1, Ohshio Shigeo 1, Nishino Junichi 1, Saitoh Hidetoshi 1 |
| |
3 |
Magnetoconductive properties of magnetite (Fe3O4)
thin film on SiO2 glass substrate |
Kounan Univ. 1@Daisuke Shimizu 1,Hiromi Kobori
1, Atsushi Yamasaki 1, Akira Sugimura 1 |
| |
4 |
Local structure and electronic structure analysis
by classic molecular dynamics and ab-initio structure relaxation |
1Tokyo Tech., 2ERATO-SORST/JST@*Tosho Kamiya1,2,
Kenji Nomura2, Hiromichi Ohta2, Masahiro Hirano1,2 and Hideo Hosono1,2 |
| |
5 |
Chemical doping to oxide nanoparticles by laser
ablation in aqueous solutions |
Univ. of Tokyo@*Hanzawa Akinori 1,Shimada Toshihiro
1,Yonezawa Tetsu 1,Nishihara Hiroshi 1,Hasegawa Tetsuya 1 |
| |
6 |
Concentration dependence of energy transfer between
Tb3+ and Yb3+ ions |
Toyota Tech. Inst.1, Toyota Central R&D Labs.,
Inc.2@*Yamashita Tatsuya 1,2, Ohishi Yasutake 1 |
| £ |
7 |
Characterization of µc-Si:H films prepared
by hot-wire assisted ECR-CVD |
Grad. School of Natural Sci. &Tech., Kanazawa Univ.1,
Beijing Univ. of Tech.2@*Ying Li1, Minoru Kumeda1, Akiharu Morimoto1, Guanghua
Chen2 |
| |
8 |
Growth-induced surface rougness of p-type Κc-Si
films using AFM morphological images |
Osaka Univ. 1@*Wataru Yoshida, Yasushi Sobajima,
Toshihiko Toyama, Hiroaki Okamoto |
| |
|
Break 11:00`11:15 |
|
| |
9 |
Transmission Spectra of Amorphous Chalcogenide
Thin Films in tha Vacuum Ultra-Violet Region(II) |
Gifu Univ @*Kota Kimata 1, Hayashi Koji 2 |
| |
10 |
Photodarkening of amorphous chalcogenide induced
by pulsed laser and its relaxation II |
Kyoto Univ. 1@Sakaguchi Yoshifumi 1, Tamura Kozaburo
1 |
| |
11 |
Nonlinear optical properties in a-Si:H |
Hokkaido Univ. Grad. Schol Engn.1@Minamikawa Naoki
1, *Tanaka Keiji 1 |
| |
12 |
Difference in structural instability between surroundings
of the Si-H and Si-H2 bonds in a-Si:H |
AIST@Hidetoshi Oheda |
| £ |
13 |
Effect of Vaccum Thermal Treatment on Paramagnetic
Defect Density and PL of a-Si1-xCx:H |
Japan Fine Ceramics Center 1, Lashkaryov Inst.
of Semicnductor Physics 2@Vasin Andriy V. 1,2, Ishikawa Yukari 1, Shibata
Noriyoshi 1, Konchits A.A. 2, Lysenko V.S. 2, Nazarov A.N. 2 |
| |
14 |
Lifetime Distribution of a-SiN:H Obtained by Wide-Band
Quadrature Frequency Resolved Spectroscopy (QFRS) II |
Faculty of Eng. Tokyo Polytechnic Univ. 1,Faculty
of Eng. Gifu Univ. 2@*Ohrui Nobuaki 1, Kaneko Kenji 1, Kamihira Kentarou
1,Kawasaki Katsuki 1, Kobayashi Shinichi 1,Aoki Takeshi 1,Shimakawa Koichi
2 |
| ’ |
15 |
Fabrication of low loss Si-N thin films in visible
wavelength region |
AIST@*H Kasa1,K Kintaka1,J Nishii |
| 14.2 Process
Technologies |
| August 30 (Wed.) 9:30`17:30 |
| 30a-X-@/ II |
| |
1 |
CVD technique operated under atmosphere applied
for synthesis of multi-layers |
Nagaoka Univ. of Tech. 1@*Kishimoto Shinichi 1,
Ohshio Shigeo 1, Nishino Junichi 1, Saitoh Hidetoshi 1 |
| |
2 |
A study on increase of growth rate in low temperature
in alumina films deposited with catalytic-CVD |
Kanagawa Inst. Tech.@Ogita Yoh-Ichiro |
| |
3 |
Growth of GaN on SiC/Si(111) inserting AlN buffer
layer using Hot-mesh CVD method |
Nagaoka Univ of Tech. 1,Tohoku Univ. 2@*Tamura
Kazuyuki 1,Fukada Yusuke 1,Kuroki Yuichiro 1,Suemitsu Maki 2,Takata Masasuke
1,Yasui Kanji 1,Akahane Tadashi 1 |
| |
4 |
Dependence of atomic hydrogen anneal effect on
plastic material |
Univ. of Hyogo@*A. Heya, M. Sato, N. Matsuo |
| ’ |
5 |
Investigation of silicidation rates of tungsten
catalyzers in Cat-CVD method |
Jpn. Adv. Inst. Sci. & Tech. 1,@*Honda Kazuhiro
1, Ohdaira Keisuke 1, Matsumura Hideki 1 |
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|
Break 10:45`11:00 |
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6 |
Defect density of a-Si films prepared on textured
substrates by Cat-CVD method |
Japan Advanced Institute of Science and Technology
(JAIST)@*Sugita Ken 1, Koyama Koichi 1, Ohdaira Keisuke 1, Matsumura Hideki
1 |
| |
7 |
Development of site-selective deposition of patterned
Cat-CVD a-Si films using hard masks |
Jpn. Adv. Inst. Sci. & Tech. (JAIST) 1@*Koyama
Koichi 1, Sugita Ken 1, Ohdaira Keisuke 1, Matsumura Hideki 1 |
| |
8 |
Pulsed laser crystallization of Ge films |
Tokyo Univ. of A&T 1, Hiroshima Univ. 2@Andoh Nobuyuki
1, Shimokawa Mitsujiro 1, Sameshima Toshiyuki 1, Higashi Seiichiro 2 |
| ’ |
9 |
Rapid recrystallization of amorphous silicon utilizing
thermal plasma jet |
Saitama Univ. 1,Riken 2@*Sakurai Yusuke 1,Yeo Min
A 1,Haruta Koji 1,Kobayashi Tomohiro 2,Shirai Hajime 1 |
| |
10 |
Effect of the hydrogen dilution in Si:H thin film
deposition by hot wire chemical vapor deposition technique |
Tokyo Inst. of Tech.@*Shuichi Hiza, Mitsuaki Tomita,
Akira Yamada, Makoto Konagai |
| £ |
11 |
Surface chemistry of silicon film growth from SiH2Cl2
by RF plasma-enhanced CVD |
Fac. of Eng., Saitama University@*Y. Li@1, T.Saito
1, H. Matsui 1 and H. Shirai 1 |
| |
|
Lunch 12:30`13:30 |
|
| 30p-X-@/ II |
| |
1 |
Effect of Hydrogen Radical Etching Process for
Κc-Si:H Thin Films |
Tokyo Univ. of Agriculture & Technology@*Supajariyawichai
Piyasak 1,Joen Ming Son 1,Kamisoko Koichi 1 |
| |
2 |
Effects of the hydrogen plasma treatment on the
thin-film polycrystalline SiGe (4) |
Tokai Univ. 1@*Honda Daisuke 1,Nakamura Isao 1,Isomura
Masao 1 |
| |
3 |
Dependence of hydrogen atom density on 3C-SiC films
quality using Hot-Mesh CVD method. |
Nagaoka univ. of Tech. 1@*Miura Hitoshi 1, Abe
Kazuki 1, Kuroki Yuichiro 1, Yasui Kanji 1, Takata Masasuke 1, Akahane Tadashi
1 |
| |
4 |
Microcrystalline silicon thin films prepared by
chemical transport deposition. |
Tokai University 1@*Oyama Akinori 1, Nakamura Isao
1, Isomura Masao 1 |
| |
5 |
Microstructure and characteristics of poly-Si film
deposited by pulsed discharge sputtering |
Chubu Univ. 1@Suzuki Takuya 1,Yuukawa Hiroyuki
1,Noda Mikio 1,Umeno Masayoshi 1 |
| |
|
Break 14:45`15:00 |
|
| ’ |
6 |
Poly-crystalline Ge thin films prepared by the
RF sputtering method(3) |
Tokai Univ. 1@*Sugita Masatoshi 1,Nakamura isao
1,Isomura Masao 1 |
| |
7 |
Microcrystalline Silicon-Germanium Thin Films Prepared
by Chemical Transport Deposition |
Tokai Univ.@*kawauchi Hiromi 1,Nakamura Isao 1,Isomura
Masao 1 |
| |
8 |
Low temperature fabrication of microcrystalline
SiGe films by reactive RF sputtering method |
Tokai Unive. 1@*Nakamura Isao 1, Isomura Masao
1 |
| |
9 |
Growth and evaluation of the hydrogenated germanium
carbon thin films by high power VHF plasma process |
Tokyo Tech. 1,QNERC 2@*Kouketsu Seiichi 1,Yashiki
Yasutoshi 1,Miyajima Shinsuke 1,Yamada Akira 2, Konagai Makoto 1 |
| ’ |
10 |
Study on Boron Doping to Microcrystalline Germanium
Carbon Thin Films. |
Tokyo Tech. 1, QNERC 2@*Yashiki Yasutoshi 1, Kouketsu
Seiichi 1, Miyajima Shinsuke 1, Yamada Akira 2, Konagai Makoto 1 |
| |
11 |
Carrier transport properties of microcrystalline
Si1-xGex thin films prepared by plasma CVD |
Tokai Univ. 1, AIST 2@* Ogata Keisuke 1, Ozawa
Tsuyoshi 1, Chia-wen Chang 2,Matsui Takuya 2, Isomura Masao 1, Kondo Michio
2 |
| |
|
Break 16:30`16:45 |
|
| |
12 |
Preparation of TiO2 thin films by hot
wire CVD method for a protecting material of TCO for Si thin film solar
cells |
Gifu Univ. 1@*Iida Tamio 1,Takamidou Yasuhiko 1,Kunii
Takao 1,Yamamoto Yoshiki 1,Masuda Toshirou 1,Koie Ryousuke 1,Ogawa Shunsuke
1,Mizuno Kouichi 1,Narita Tomoki 1,Yoshida Norimitsu 1,Nonomura Shuichi
1 |
| |
13 |
The application of microcrystalline 3C-SiC:H thin
film to silicon thin film solar cells. |
Gifu Univ.@*Shunsuke Ogawa 1,Masaaki Okabe 1,Tamio
Iida 1,Kouichi Mizuno 1,Tomoki Narita 1,Yuusuke Ikeda 1,Takashi Itoh 1,Norimitsu
Yoshida 1,Shuichi Nonomura 1 |
| |
14 |
High Rate Growth Microcrystalline Si Thin Films
deposited at High Pressure Region and Their Application to Solar Cells |
Grad. School of Eng. Sci., Osaka Univ.@*Nakano
Shinya , Sobajima Yasushi , Toyama Toshihiko , Okamoto Hiroaki |
| |
15`18 17:30`18:30 (14.3 Devices) |
| 14.3 Devices
|
| August 30 (Wed.) 17:30`18:30 |
| 30p-X-@/ II |
| |
1`14 13:00`17:30 (14.2 Process Technologies) |
| |
15 |
Influence of interface structure on a-Si:H/c-Si
heterojunction solar cells |
AIST@*Hiroyuki Fujiwara 1, Michio Kondo 1 |
| |
16 |
Numerical Analysis of Multijunction Amorphous Silicon-Based
Solar Cells for Low Latitudes |
Tokyo Inst. of Tech. Grad. Sch. of Sci. and Eng.
1, Tokyo Inst. of Tech. QNERC 2@*Yunaz Ihsanul Afdi 1, Sriprapha Kobsak
1, Hiza Shuichi 1,
Yamada Akira 2, Konagai Makoto 1 |
| ’ |
17 |
Performance comparison of Si-based photovoltaic
modules under frequent outdoor conditions and standard test condition |
Ritsumeikan Univ. 1,Kaneka 2@*Fukushige Shunichi
1,Nagae Shingo 1,Gotoh Masahiro 2,Nakajima Teruhiko 2,Minemoto Takashi 1,Yamamoto
Kenji 2,Takakura Hideyuki 1,Hamakawa Yoshihiro 1 |
| |
18 |
Impact of solar spectrum and temperature variations
on silicon-based photovoltaic modules. |
Ritsumeikan Univ. 1, Kaneka Co. 2@Shingo Nagae
1, Shunichi Fukushige 1, Masahiro Gotoh 2, Akihiko Nakajima 2, Takashi Minemoto
1, Kenji Yamamoto 2, Hideyuki Takakura 1, Yoshihiro Hamakawa 1 |