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13 Science and Technology of Crystals
13.1 Bulk Crystal Growth
August 29 (Tue.) 12:45〜17:30
29p-ZF-　/ I
△	1	Development of DAST crystals with high laser tolerance using solution stirring	Graduate School of Eng., Osaka Univ. 1, Venture Business Lab., Osaka Univ. 2, Graduate School of Science, Tokyo Univ. 3　*Yoshinori Takahashi 1,2, Shinji Onzuka 1,2, Kazumasa Sugiyama 3, Kenichi Sasai 1,2, Srinivasan Brahadeeswaran 1,2, Masashi Yoshimura 1,2, Yusuke Mori 1,2, Takatomo Sasaki 1,2
	2	Growth and evaluation of nonlinear optical crystal CsLiB6O10	Graduate School of Eng., Osaka Univ. 1,　Oxide Co. 2　Hitomi Noro 1, Yoshiyuki Honda 1, Ai Kanoh 1, Akio Miyamoto 2, *Masashi Yoshimura 1, Yusuke Mori 1, Takatomo Sasaki 1, Yasunori Furukawa 2
	3	Reduction of scattering centers in CsB3O5 crystals by post-growth heat treatments	Graduate School of Eng., Osaka Univ.　Eiro Takeo 1,Doldla Rajesh 1,Masashi Yoshimura 1,Mori Yusuke 1,Sasaki Takatomo 1
	4	Growth and VUV Fluorescence of Nd3+ doped Fluoride Single Crystals	IMRAM Tohoku Univ. 1, Tokuyama Corp. 2, IMR 3, ILE Osaka Univ. 4　*Fukuda Kentaro 1,2, Cadatal Marilou 3,4, Yoshikawa Akira 1, Sarukura Nobuhiko 3,4, Fukuda Tsuguo 1
	5	Compositional dependence on the thermal conductivity of rare earth sesquioxides	IMRAM, Tohoku Univ. 1, Ibaraki Univ. 2　*Simura Rayko 1, Mun Ji-Hun 1, Yoshikawa Akira 1, Ohta Hiromichi 2, Shibata Hiroyuki 1, Tsuguo Fukuda 1
	6	Characterization and scintillation properties of substitution effect for Pr doped Aluminum Garnet Crystals	IMRAM Tohoku Univ. 1, Inst. Physics AS CR 2　Ogino Hiraku 1, Yoshikawa Akira 1, Nikl Martin 2, Fukuda Tsuguo 1
	7	Growth of 2 inch Pr:Lu3Al5O12(LuAG) single Crystals	IMRAM, Tohoku Univ.1, R & D Division,Furukawa Co. Ltd.2　Kei Kamada 1,2 , Usuki Yoshiyuki 2, Hiraku Ogino 1, Akira Yoshikawa 1, Tsuguo Fukuda 1
	8	Control of Oxygen Bubbles in Calcium Aluminate (Ca12Al14O33) Single Crystals by Doping Transition Metal Elements	Univ. Yamanashi　*Tanaka Isao, Shimomura Takumi, Yamanaka Minako, Islam Nazmul, Watauchi Satoshi
△	9	Growth of La3Ta0.5Ga5.5O14 Single Crystal Using FZ(Floating Zone) Method and Atmosphere Dependency of Electrical Resistivity of it	IMR. Tohoku Univ. 1　*Kimura Hiromitsu 1, Koh Shinji 1, Huang Xinming 1, Uda Satoshi 1
	10	Investigation on electric properties of langataite single crystal grown by vertical Bridgman method	Shinshu Univ. 1, Citizen Fine Tech 2, Mitsubishi Material 3　*Taishi Toshinori1, Hayashi Takayuki2, Fujiwara Kazutaka3 and Hoshikawa Keigo1
		Break 15:15〜15:30
	11	Composition-dependence of crystallization electromotive force at the growth interface of LiNbO3	Inst. of Materials Research, Tohoku Univ. 1, Sakai Chemical Industry Co., Ltd. 2,　Shinji Koh 1, Masahiro Nishida 2, 1Yukihiro Kuniyoshi 2, Xinming Huang 1, Satoshi Uda 1
	12	Global analysis of heat transfer in the CZ furnace of oxide crystal growth taking into account three-dimensional unsteady melt convection	Osaka Prefecture Univ. 1, Southwest Jiaotong Univ. 2, Tohoku Univ. 3, Hachinohe Inst. Tech. 4　Chengjun Jing 1,2, Takao Tsukada 1, Mitsumasa Mito 3, Chiaki Yokoyama 3, Masaki Kobayashi 4
	13	Dynamic analysis of temperature distribution in multi-crystalline silicon of a casting method with moving multi heater system	RIAM Kyushu Univ. 1　*Nakano Satoshi 1,Liu Lijun 1,Kakimoto Koichi 1
▲	14	Three-dimensional global analysis of heat transfer in a unidirectional solidification process of silicon	RIAM Kyushu Univ. 1　*Liu Lijun 1,Nakano Satoshi 1,Yoneda Daigo 1,Kakimoto Koichi 1
△	15	In situ observation of a solid/liquid interface morphology during directional growth	Tohoku Univ. (IMR) 1　*Fujiwara Kozo 1, Maeda Kensaku 1, Usami Noritaka 1, Sazaki Gen 1, Nose Yoshitaro 1, Nakajima Kazuo 1
	16	Investigation of reaction between Si melt and silica glass controlled by doping impurity	IMR Tohoku Univ. 1　*T. Hoshikawa 1,X. Huang 1,S. Uda 1
	17	Growth of homogeneous InGaSb crystals of high In composition	RIE, Shizuoka Univ. 1　Hikida Takuya 1,Murakami Noriaki 1,Koyama Tadanobu 1,Momose Yoshimi 1,Kumagawa Masashi 1,Hayakawa Yasuhiro 1
	18	Composition control by the applied Traveling Liquidus-Zone (TLZ) method in InxGa1-xAs bulk crystals growth	Tokyo Inst. of Technology 1, Japan Aerospace Exploration Agency 2, Advanced Engineering Services Co., Ltd. 3　*Miyata Hiroaki 1,3, Adachi Satoshi 2, Ueda Toshiaki 2, Muramatsu Yuji 3, Kinoshita Kyoichi 2, Odawara Osamu 1, Yoda Shinichi 1,2
13.2 II-VI Crystals
August 30 (Wed.) 9:30〜17:45
30a-ZF-　/ I
	1	Evaluation of deep defects in ZnO by Thermally stimulated current method	Hosei Univ. 1, Osaka Kyoiku Univ. 2　*Motoshi Ooi 1, Matsumoto kouji 1, Kuriyama Kazuo 1, Kushida Kazumasa 2
	2	ZnO crystal growth by chemical vapor transport	Nagoya Inst. of Tech. 1　Tokuda Tetsuya 1, Banno Yuta 1, Abe Koji 1, Eryu Osamu 1
	3	MBE growth of Cr-doped ZnO layers by using RF plasma source	Okayama Univ. of Science1, Miyazaki Univ.2　*Minoru Yoneta1, Kenji Yoshino2, Masakazu Ohishi1, Hiroshi Saito1 yoneta@dap.ous.ac.jp
	4	Growth of ZnO on Sapphire A(11-20) and C(0001) Substrates by MOCVD I	Univ. Yamanashi 1,Saga Univ. 2　Akiyama Shutetsu 1, Minegishi Kazunori 1, Tanaka Tooru 2, Ogawa Hiroshi 2, * Kasuga Masanobu 1
△	5	Characterization of carrier concentration of ZnO film by ECV measurement	Res. Inst. Electronics, Shizuoka Univ.　Aoshima Tsuyoshi 1,Hayashi Takao 1,Ichikawa Yoshimi 1,Nakamura Atsushi 1,Aoki Toru 1,Temmyo Jiro 1
		Break 10:45〜11:00
△	6	Characterization of refractive index of Zn1-xCdxO and MgyZn1-yO	Res. Inst. Electronics, Shizuoka Univ.　*Ohashi Toshiya 1,Yamamoto Kenji 1,Nakamura Atsushi 1,Aoki Toru 1,Temmyo Jiro 1
	7	One dimensional nano structure grown on Si substrate by MBE	Nagoya Institute of Technology 1　*Yohei Kuno 1,Yasuhiko Hayashi 1,Watanabe Akira 1,Jimbo Takashi 1,Soga Tetsuo 1
△	8	TEM analysis of ZnO nanodots on sapphire substrate.	Reserch Inst. of Electronics, Shisuoka Univ.　Okamatsu Kota 1, Nakagawa Satoshi 1, Nakamura Atsushi 1, Aoki Toru 1, Temmyo Jiro 1
	9	Destruction Processes of MgO Protecting Layer in Plasma Display by Sputtering	Tohoku Univ. 1, JST-PRESTO 2, Univ. Tokyo 3, Tohoku Univ. 4　Kubo Momoji 1,2, Kikuchi Hiromi 1, Tsuboi Hideyuki 1, Koyama Michihisa 1, Endou Akira 1, Takaba Hiromitsu 1, Del Carpio Carlos 1, Kajiyama Hiroshi 3, Miyamoto Akira 1,4
△	10	Self-Organization of PbTe Nanodots Grown by Lattice-Matched PbTe/CdTe Heteroepitaxy	Osaka Inst. of Tech. NMRC 1, Linz Univ. 2　Harada Hisashi 1, Itakura Tomoyuki 1, Kato Takuma 1, Koike kazuto 1, Yano Mitsuaki 1, Heiss Wolfgang 2, Groiss Heiko 2, Kaufmann Erich 2, Hesser Gunter 2, Boberl Michaela 2, Springholz Gunther 2, Schaffler Friedrich 2
		Lunch 12:15〜13:15
30p-ZF-　/ I
	1	Study of Large Area CdTe X-ray and γ-ray Imaging Detectors Grown by MOVPE (X IX) 〜Characterization of CdTe/Si Diode Detectors〜	Nagoya Inst. of Tech. 1　*Yokota Masahiro 1,Noda Kotaro 1,Ohashi Hiroyuki 1,Omura Motohiro 1,Shingu Ikki 1, Tanaka Ryuichi 1, Nakamura Koji 1, Minoura Shinpei 1, Agata Yasunori 1, Niraula Madan 1, Yasuda Kazuhito 1
	2	The effect of Sb treatment of GaAs substrate on Sb-doped Cd1-XMnXTe	Chubu Univ., 1　*Uzura Shingo 1,Tahashi Masahiro 1,Goto Hideo 1,Ido Toshiyuki 1
	3	Optical Absorption Spectroscopy of ZnTe:O on ZnTe Substrate	Yamanashi Univ.　*Kazuaki Gemma, Kazumasa Aoki, Yoichi Nabetani, Tsutomu Muranaka, Takamasa Kato, Takashi Matsumoto
	4	Observation of a sharp luminescence line at 471nm from Te isoelectronic centers in ZnSe	JSPS Research Fellow 1, RIES, Hokkaido Univ. 2　*Masafumi Jo 1,2, Michiaki Endo 2, Hidekazu Kumano 2, Ikuo Suemune 2
	5	Microstructure evaluation of V-doped ZnSe grown by MOVPE	Chubu Univ., 1　Z.Wu 1,M.Tahashi 2,H.Goto 3,T.Ido 4
	6	Effect of wavelength up-conversion for the ZnSe-ZnTe superlattice grown by Molecular Beam Epitaxy	Hokkaido Inst. of Tech. 1　*Ichinohe Yoshihiro 1, Shigaura Gouichi 1, Kanamori Masahiro 1, Ohashi Masahiro 1, Imai Kazuaki 1, Sawada Takayuki 1, Suzuki Kazuhiko 1, Kimura Nobuyuki 1, Kmura Naohito 1
	7	Photoluminescence of the ZnTe quantum dots	Hokkaido Inst.of.Tech.　*Shigaura Goichi 1, Ichinohe Yoshihiro 1, Kanamori Masahiro 1, Ohashi Masahiro 1,Imai Kazuaki 1,Sawada Takayuki 1,Suzuki Kazuhiko 1,Kimura Nobuyuki 1,Kimura Naohito 1
	8	Zn irradiation effects at the superlattice interfaces in the growth of MgSe/BeZnSeTe superlattices on InP substrates	Sophia Univ.1　*Koichi Hayami 1,Hiroaki Hayashi 1,Masaki Kato 1,Ichirou Nomura 1,Katsumi Kishino 1
	9	Emission properties of quantum well structures made of MgSe/BeZnSeTe superlattices on InP substrates	Sophia Univ. 1　*Hayashi Hiroaki 1, Nomura Ichirou 1, Hayami Koichi 1, Kato Masaki 1, Kishino Katsumi 1
		Break 15:30〜15:45
△	10	Magneto-PL characterization of ZnCdSe/ZnSe SQW embedded with ZnMnSe wires	Univ. of Yamanashi　*Ito Masahiro, Nakamura Kazuhito, Tajima Takamasa, Muranaka Tsutomu, Nabetani Youichi, Kato Takamasa, Matsumoto Takashi
	11	Near-Field Microscopy of Single ZnS Nanobelts	NIMS　Tsuruoka Tohru, Liang Changhao, Terabe Kazuya, Hasegawa Tsuyoshi
	12	Development of ZnSSe PIN photodiode in blue-ultraviolet wavelength region	Fuculty of Eng Tottori-Univ　Kouhei Miki 1,Yuta Ohsita 1,Daisuke Katada 1,Tomoki Abe 1,Hirohumi Kasada 1,Koshi Ando 1
	13	Green Light Emitting Diodes with CdSe Quantum Dots	Kyoto Inst. of Technology 1　Yuji Araki 1,Kouji Ohkuno 1,Takeshi Furukawa 1,*Junji Saraie 1
	14	Lasing operation by current injection in Te doped ZnSe/ZnMgSSe DH structure	Tottori Univ.1　*Ebata Tatsurou 1,Hitomi Takuma 1,Morikawa Genntarou 1,Abe Tomoki 1,Kasada Hirohumi 1,Ando Koshi 1
	15	Evaluation of device degradation of wide gap semiconductor by scanning spreading resistance microscopy	Faculty of Eng. Tottori Univ 1, Tottori U.VBL 2　*Morita Yasuhiro 1, Adachi Masahiro 2, Tsutsumi Sueyuki 1, Urata Akihiro 1, Hashimoto Yutaka 1, Ohashi Shuji 1, Kanzaki Katuhisa 1, Abe Tomoki 1, Kasada Hirofumi 1, Ando Koshi 1
	16	Slow-mode degradation mechanism of ZnSe based white LEDS -Origin of migration donor like defects-	Tottori Univ. 1,Tottori Univ. VBL 2, 　Shuji Ohashi 1,Masahiro Adachi 2,Sueyuki Tsutsumi 1,Akihiro Urata 1,Yutaka Hashimoto 1,Yasuhiro Morita 1,Katsuhisa Kanzaki 1,Tomoki Abe 1,Hirofumi Kasada 1,Koshi Ando 1
	17	Waveguide Stark Effect Optical Modulators of ZnSe/ZnMgSSe Asymmetric Coupled Quantum Wells	Tottori Univ 1　*Yamane Noritsugu 1, Yoshida Toru 1, Nishiguti Toshihumi 1, Kozeni Hiroki 1, Abe Tomoki 1, Kasada Hirohumi 1, Ando Koshi 1
13.3 III-V Epitaxial Growth
August 29 (Tue.) 9:00〜17:30
29a-B-　/ I
△	1	Observation of the sub-surface in GaAs-MOVPE by in situ RAS	Univ. of Tokyo 1, RCAST 2, JST-SORST 3　*Momoko Deura 1-3, Masakazu Sugiyama 1,3, Takayuki Nakano 1,3, Yukihiro Shimogaki 1,3, Yoshiaki Nakano 2,3
	2	Area selective epitaxy of GaAs on GaAs(111)A substrates by Migration Enhanced Epitaxy (MEE)	Waseda Univ.　*Nishinaga Jiro 1, Uehara Takahiro 1, Iwai Takayuki 1, Yoshiba Ippei 1, Horikoshi Yoshiji 1
	3	Modeling of InGaAsP selective area metal-organic vapor phase epitaxy: surface diffusion length dependence on layer composition	Univ. of Tokyo 1, RCAST Univ. of Tokyo 2, JST-SORST 3　*Tomonari Shioda 1-3, Ryusuke Onitsuka 1,3, Masakazu Sugiyama 1,3, Yukihiro Shimogaki 1,3, Yoshiaki Nakano 1-3
△	4	Reactor-scale distribution of the mask effect in InGaAsP Selective-area MOVPE	The Univ. of Tokyo 1, The Univ of Tokyo 2, JST-SORST 3　*Ryusuke Onitsuka 1,3, Tomonari Shioda 1,3, Masakazu Sugiyama 1,3, Yukihiro Shimogaki 1,3, Yoshiaki Nakano 2,3
▲	5	The Influence of Be Codoping on the Characteristics of Heavily Si-Doped GaAs	Waseda Univ.　*Chavanapranee Tosaporn 1, Horikoshi Yoshiji 1
	6	Anisotropy evaluation of Peudomorphic InGaAs/InAlAs MD-QW structures grown on (411)A InP substrates by MBE	Osaka Univ 1,Tokushima Univ 2,Ehime Univ 3　*Kusunoki Shinichirou 1,Kitada Takahiro 2,Shimomura Satoshi 3
		Break 10:30〜10:45
	7	Characterization of crystallinity of low temperature grown TlGaAs by RBS/channeling	Kochi Univ. of Technol.1、Shimane Univ.2　Shingo Tamoto1、Takuya Nebiki1、Yasutomo Kajikawa2、Tadashi Narusawa1
△	8	Low Temperature Dependence of Emission and Absorption Wavelength of a GaNAsBi/GaAs DH Diode	Kyoto Inst. of Tech 1,NTT Photonics Labs. 2,Hitachi Central Labs. 3　*Kazama Yutaka 1,Tanaka Yoshinori 1,Yoshimoto Masahiro 1,Wei Huang 1,Gan Feng 1,Yamashita kenichi 1,Kondo Yasuhiro 2,Tsuji Sinji 3,Oe kunishige 1
	9	Method to shorten the intersubband-transition-wavelength in InGaAs/AlAsSb coupled-quantum-wells using InAlAs-coupling-barriers	AIST　*Nagase Masanori, Mozume Teruo, Simoyama Takasi, Hasama Toshifumi, Ishikawa Hiroshi
△	10	MOVPE growth of InAs/InGaAs MQWs on InP substrates.	NTT Photonics Lab. 1,　*Sato Tomonari 1, Mitsuhara Manabu 1, Kondo Yasuhiro 1
	11	Annealing effect on InAsSbN infrared QW laser diodes grown on InP substrates	Osaka Pref. Univ. 1, CREST-JST 2　Kawamura Yuichi 1,2, Inoue Naohisa 1
		Lunch 12:00〜13:00
29p-B-　/ I
△	1	Crystal growth and characterization of InSb films on sapphire substrate grown by MOVPE	Depart. of EEIE 1 and HRC 2, Kanagawa University　Matsumoto Masashi 1, Yamazaki Jun 1, Yamaguchi Shigeo 1,2
	2	Electrical properties of InSb sandwiched between AlInSb layers grown by MBE	Asahikasei Corporation 1　*Hirotaka　Geka 1,Satoshi Yamada 1, Atsushi　Okamoto 1, Hiromasa Goto 1, Kazuo Yoshida 1, Ichiro　Shibasaki 1
	3	X-ray diffraction of InSb/GaAs(001) with threading dislocation density distribution based on pair annihilation	JAIST 1　Takita Hayato 1, Sato Taku 1, Suzuki Toshi-kazu 1
	4	In-Plane Negative Magnetoresistance Effect due to Surface Boundary Scattering in InSb Films	Osaka Inst. of Tech. NMRC 1, Tokyo Univ. of Science, Yamaguchi 2, Asahi Chemical Industry Co. Ltd. 3　Fujimoto Akira 1, Ishida Shuichi 2, Okamoto Atsushi 3, Shibasaki Ichiro 3
	5	Epitaxial growth of GaPN by MOVPE	Toyohashi Univ. of Tech.　*Susumu Hatakenaka 1,Wakahara Akihiro 1, Yonezu Hiroo 1, Okada Hiroshi 1, Furukawa Yuzo 1
	6	Strain effects on P-based III-V-N alloys on Si and GaP	Toyohashi Univ. Tech. 1, Tsuyama Nat. Coll. Tech. 2　*Umeno Kazuyuki 1, Utsumi Atsushi 1, Furukawa Yuzo 1, Yonezu Hiroo 1, Wakahara Akihiro 1, Itoh Kunio 2
	7	Investigation of defect level in GaPN by photoconductivity transient measurement	Toyohashi Univ. Tech. 1　*Minohara Daisuke 1, Wakahara Akihiro 1, Yonezu Hiroo 1, Nakai Hiromitsu 1, Okada Hiroshi 1, Furukawa Yuzo 1
	8	Application of micro-size light emitting diode structure for monolithic optoelectronic integrated circuits	Toyohashi Univ. of Tech.1　*Moon Soo Young1, Yamada Shintaro1, Morisaki Yuji1, Furukawa Yuzo1, Wakahara Akihiro1, Yonezu Hiroo1
		Break 15:00〜15:15
	9	Liquid phase epitaxy of GaAsN by the temperature difference method	Tohoku Univ. 1, Semiconductor Research Inst. 2　*Sugai Maki 1, Oyama Yutaka 1, Tanno Takenori 2, Nishizawa Junichi 2
	10	Multiexciton luminescence from isoelectronic centers of nitrogen doped on GaAs(001)	The Grad. School of Sci. & Tech Kobe Univ. 1, Fac. of Eng Kobe Univ. 2　*Inoue Takumi 1, Kita Takashi 1,2, Wada Osamu 1,2
	11	Micro photoluminescence study of isoelectronic traps in nitrogen δ-doped GaAs	Saitama Univ. 1,ISSP 2,The Univ. of Tokyo 3　Endo Yuta 1,Tanioka Kentaro 1,Hijikata Yasuto 1, Yaguchi Hiroyuki 1,Yoshida Sadahumi 1,Yoshita Masahiro 2,Akiyama Hidehumi 2,Nakajima Humihiro 3,Katayama Ryuji 3,Onabe Kentaro
	12	The influence of residual impurities on electrical property of GaAsN thin films grown by CBE II	Toyota Tech. Inst. 1　*Takahiro Imai 1, Kenichi Nishimura 1, Hidetoshi Suzuki 1, Yoshio Ohshita 1, Masafumi Yamaguchi 1
	13	Growth of InGaAs/GaNAs multi-quantum well(MQW) solar cells	Univ. of Tsukuba, Inst. of Appl. Phys.　*Sasaki Naoyuki 1,Shimizu Yukiko 1,Oshima Ryuji 1,Okada Yoshitaka 1
	14	MBE growth of high-quality GaInNAs/GaAs multiple quantum wells	Hitachi CRL　*Kasai Jun-ichi, Kitatani Takashi, Adachi Kouichirou, Nakahara Kouji, Aoki Masahiro
	15	X-ray Diffraction Analysis by Simulation of GaInNAs/GaAs Double Quantum Wells with Application of New Analysis Method of Deterioration	NTT Photonics Lab. 1, NTT Basic Research Lab. 2　*Nakashima Kiichi 1, Tateno Kouta 2
	16	Optimization of applied voltages of ion deflection plates for improvement of Ga(In)NAs crystalline quality	Univ. of Tsukuba, Inst. of Applied Physics 1　*Naoya Miyashita 1, Yukiko Shimizu 1, Yoshitaka Okada 1
	17	Evaluation of electrical properties of GaInNAs thin films grown by atomic H assisted RF-MBE	Univ. of Tsukuba, Inst. of Appl. Phys.　* Shimizu Yukiko 1, Miyashita Naoya 1, Uedono Akira 1, Okada Yoshitaka 1
13.3 III-V Epitaxial Growth
August 31 (Thu.) 9:00〜18:15
31a-ZF-　/ I
△	1	Lattice coherency in hut cluster type GaAs nanocrystals grown on Si(100) surface	Kobe Univ. 1,2, Osaka Univ. 3　Usui Hiroyuki 1, Yasuda Hidehiro 2, Mori Hirotaro 3
	2	Epitaxial growth of GaP layers on Si substrates by MOVPE	Shizuoka Univ. 1　*Watanabe Satoru 1, Morizumi Kenta 1, Fuke Syunro 1, Takano Yasushi 1
	3	Cross-sectional STM observation of interfacial structures and compositional distributions in InP-on-InGaAs interface: InP layer thickness dependence	Nagoya Univ.　*Kano Yasuaki 1, Yamakawa Ichirou 1, Lee WoSikku 1, Ujihara Toru 1, Takeda Yoshikazu 1, Nakamura Arao 1
△	4	Precise control on GaAs/InGaP hetero-interface fabrication by MOVPE and interface abruptness evaluation using the Z-contrast method by STEM	The Univ. of Tokyo 1, SORST 2,　*Nakano Takayuki 1, 2, Abe Eiji 1, Sugiyama Masakazu 1, 2, Nakano Yoshiaki 1, 2, Shimogaki Yukihiro 1, 2,
	5	The wavelength tuning of the wide-band light emission from InAsP quantum dots	Nagoya Univ. 1　Miyake Shinsuke 1, W-S. Lee 1, Shinichi Kawamura 1, Toru Ujihara 1, Yoshikazu Takeda 1
		Break 10:15〜10:30
	6	Effect of ion removal from RF-plasma source on the growth of GaInNAs self-assembled quantum dots	Univ. of Tsukuba, Inst. of Appl. Phys. 1　*Nakamura Yuta 1, Oshima Ryuji 1, Hashimoto Takayuki 1, Shigekawa Hidemi 1, Okada Yoshitaka 1
	7	MOVPE Growth of InAsN self-assembled quantum dots on GaAs (001) substrates	The Univ. of Tokyo 1, Chulalongkorn Univ. 2　Kuboya Shigeyuki 1, Thieu Quang Tu 1, Takahashi Shun 1, Nakajima Fumihiro 1, Sakuntum Sanorpim 2, Katayama Ryuji 1, Onabe Kentaro 1
	8	Characterization of GaAs growth processes on GaSb quantum dot surfaces	Muroran Inst. of Tech. 1, Hokkaido Univ. 2, CREST-JST 3　*Uesugi Katsuhiro 1,3, Fukuda Hisashi 1, Idutsu Yasuhiro 2, Ikuo Suemune 2,3
	9	GaAsSb embedding growth of high-density InAs quantum dots by MBE	Univ. Electro-Comm.　Yoshida Takayuki, Yamaguchi Koichi
△	10	Polarization Characteristics of MBE grown InAs QD with GaInAsSb Cover Layer II	Microsys P&I lab, Tokyo Tech1　*Matsuura Tetsuya1, Tomoyuki Miyamoto1, Masataka Ohta1, and Fumio Koyama1
△	11	Closely stacking growth of highly uniform InAs quantum-dots on self-formed GaAs nanoholes	Univ. of Electro-Comm. 1　*Tsukiji Nobukazu 1, Yamaguchi Koichi 1
		Lunch 12:00〜13:00
31p-ZF-　/ I
	1	In-plane self-arrangement of high-density InAs quantum-dots on GaAsSb/GaAs(001) substrates	Univ. of Electro-Comm. 1　*Kanto Toru 1,Yamaguchi Koichi 1
	2	Stacking of InAs Quantum Dots Formed by the Nano-Jet Probe Method	NEC Corp. 1, AIST 2, Univ. of Tsukuba 3　 *Shunsuke Ohkouchi 1, Yoshimasa Sugimoto 2,3, Hiroshi Ishikawa 2, Kiyoshi Asakawa 3
	3	Site control of self-organized InAs QDs on patterned GaAs substrates	National Institute of Informations and Communications Technology 1, Doshisha Univ. 2　Ueta Akio 1, Gozu Shin-ichiro 1, Akahane Kouichi 1, Yamamoto Naokatsu 1, Tsuchiya Masahiro 1, Ohtani Naoki 2
△	4	Self-Assembled Growth of Ultralow Density InAs Quantum Dots by Molecular Beam Epitaxy	IIS Univ. of Tokyo 1　*Ohmori Masato 1, Kawazu Takuya 1, Torii Kousuke 1, Sakaki Hiroyuki 1
	5	Selective area growth of InAs quantum-dots by metal-mask (MM) method	Univ. of Tsukuba 1, NEC Corp. 2, AIST 3 　Takata Yoshiaki 1, Ozaki Nobuhiko 1, Ohkouchi Shunsuke 2, Sugimoto Yoshimasa 1,3, Ikeda Naoki 1,3, and Asakawa Kiyoshi 1
	6	Controlling Emission Wavelength of Double-capped InAs Quantum Dots by Selective MOVPE Growth	Sophia Univ. 1,ATR Wave Engineering Lab. 2　*Yamauchi Yusuke 1, Okawa Tatsuya 1,Yoshida Junji 2,Shimomura Kazuhiko 1
	7	Growth of InAs nanowire on lattice mismatched substrates by Selective-Area MOVPE	Grad.Sch.of Info.Sci.and Tech. and RCIQE, Hokkaido Univ. 1　*Tomioka Katsuhiro 1,Hara Shinjiroh 1,Motohisa junichi 1,Fukui Takashi 1
	8	MBE Growth of InAs Quantum Dots with on In0.4Ga0.6As Layers with Growth Interruption	Noukou Univ.1　*Zhao Jing 1 Yoshida Keisuke 1 Morishita Yoshitaka 1
	9	RHEED analysis on the formation processes of InAs quantum dots on GaAs(001)	Toyota Technological Inst.　Kohtaro Matsuura, Tsuyoshi Higashinakagawa, *Itaru Kamiya
△	10	Multi-Angle Observation of Embedded Quantum Dot by Using High-Resolution TEM	Kobe Univ. Sci.&Tech. 1, Kobe Univ. Eng. 2, Hitachi High-Technologies 3　Inoue Tomoya 1, Kita Takashi 1,2, Wada Osamu 1,2, Konno Mitsuru 3, Yaguchi Toshie 3, Kamino Takeo 3
△	11	Effects of AlAs Coating for InAs Quantum Dots III	N.I.T.　*Yokota Hiroshi 1, Okamoto Hiroshi 1, Iizuka Kanji 1
		Break 15:45〜16:00
	12	PL characterization of modulation doped p-InAs quantum dots	IIS、Univ. of Tokyo 1, NCRC, Univ. of Tokyo 2　*Naoto Kumagai 1,2, Katsuyuki Watanabe 1,2, Yoshiaki Nakata 1,2, Yasuhiko Arakawa 1,2
	13	Uniform self-formation of high-density InAs quantum dots on Sb/GaAs layers during InGaAs embedding growth	Univ.of Electro comm.1　Tonomura Shinichi 1,Yamaguchi Koichi 1
	14	Fabrication of high density InAs quantum dot stacks using Sb irradiated GaAs surface	NCRC 1, IIS 2, RCAST 3, Tokyo Univ.　*Watanabe Katsuyuki 1,2, Kumagai Naoto 1,2, Nakata Yoshiaki 1,2, Ishida Mitsuru 1,2, Arakawa Yasuhiko 1,2,3
	15	Post-annealing effects on emission characteristics of InAs quantum dots on GaNAs buffer layer	Microsystem Research center, P.&I. lab., Tokyo Inst. of Tech.　Ryoichiro Suzuki 1,Tomoyuki Miyamoto 1,Fumio Koyama 1
	16	Effect of spacer layer structure on multi-stacking of InAs quantum dots	Univ. of Tsukuba, Inst. of Applied Physics 1　*Hashimoto Takayuki 1, Oshima Ryuji 1, Nakamura Yuta 1, Shigekawa Hidemi 1, Okada Yoshitaka 1
	17	Fabrication of Multilayer Self-Assembled InAs Qunatum Dot Solar Cells	Univ. of Tsukuba Inst. Applied Physics 1　*Komiyama Hiroyuki 1, Oshima Ryuji 1, Hashimoto Takayuki 1, Shigekawa Hidemi 1, Okada Yoshitaka 1
	18	Size distribution and optical characteristics of multi stacked InAs quantum dots on InP(001) substrates	Sophia Univ. 1,ATR Wave Engineering Lab. 2　*Okawa Tatsuya 1, Yamauchi Yusuke 1, Yoshida Junji 2, Shimomura Kazuhiko 1
	19	Optical Polarization characteristic of Highly Stacked Quantum Dots	The Grad. School of Sci. & Tech Kobe Univ. 1, Fac. of Eng. Kobe Univ. 2, NiCT 3　*Nakatani Hiroaki 1, Kita Takashi 1,2, Wada Osamu 1,2, Akahane Kouichi 3, Tsuchiya Masahiro 3
	20	Theoretical analysis of optical polarization in InAs/GaAs columnar quantum dots: stacking-layer-number dependence	NCRC Univ. of Tokyo 1, NTT Photonics Laboratories 2, Fujitsu Laboratories Ltd. 3　*Saito Toshio 1, Kakitsuka Takaaki 2, Ebe Hiroji 1, Sugawara Mitsuru 3, Arakawa Yasuhiko 1
13.4 III-V Nitride Epitaxial Growth
August 29 (Tue.) 9:00〜17:15
29a-C-　/ I
	1	Electronic structure of InN and its contribution to the superconductivity	Department of Electronics, Tokai University　T. Inushima 1
	2	Microphotoreflectance spectraof InN	Fukui Univ　*Kurihara Kenta 1,Kugumiya Youhei 1,Nakagawa Naoto 1,Fukui Kazutoshi 1,Yamamoto Akio 2
	3	Characterization of InN films by Raman scattering	Kyoto Inst. Tech. 1,Wakayama Univ. 2,Fukui Univ. 3　*Matsuoka Daisuke 1,Takahashi Kenji 1,Kisoda Kenji 2,Nagai Yasuhiko 3,Yamamoto Akio 3,Harima Hiroshi 1
△	4	X-ray Photoelectron Spectroscopy Study on Natural-Oxidation Process of In- and N-polar InN	Ritsumeikan Univ 1,Center for Promotion of the COE Program 2,Res. Org. of Sci. and Eng. 3　*Takeshi Hioka 1,Daisuke Muto 1,Takayuki Fukuda 1,Hiroyuki Naoi 2,Tsutomu Araki 1,Akira Suzuki 3,Yasushi Nanishi 1
▲	5	Polarity of InN Grown by MOVPE on Sapphire (0001)	VBL Univ. Fukui 1, Univ. Fukui 2 　*Wang Wenjun 1,Nagai Yasuhiko 2,Houchin Yoshinori 2,Hashimoto Akihiro 2,Yamamoto Akio 2
		Break 10:15〜10:30
	6	Growth condition dependence of tilt- and twist-angle distributions for MOVPE InN	Univ. Fukui 1　*Houchin Yoshinori 1,Nagai Yasuhiko 1,Sugita Kenichi 1,Hashimoto Akihiro 1,Yamamoto Akio 1
	7	Deterioration of atmospheric-pressure MOVPE InN films during growth	Univ. of Fukui 1　*Sugita Kenichi 1,Houchin Yoshinori 1,Nagai Yasuhiko 1,Hashimoto Akihiro 1, Yamamoto Akio 1
	8	Characterization of MOVPE InN films grown on 3c-SiC/Si(111) templates	Fukui Univ.1, Wakasa-wan Energy Reseach Center2　Cho Myungsoo1, Sawazaki Naoki1, Sugita Kenniti1, Hashimoto Akihiro1, Ymamoto Akio1, Ito Yoshihumi2
	9	Hydride vapor phase epitaxy of InN on sapphire(0001) substrate by controlling the group III precursor	Dept. Appl. Chem., Tokyo Univ. of Agri. & Tech.　*Nishizawa Yuuki 1, Kikuchi Jun 1, Murakami Hisashi 1, Kumagai Yoshinao 1, Koukitu Akinori 1
	10	Photoluminescence study of cubic InN grown by RF-MBE	Saitama Univ. 1,CREST,JST 2　　*Inoue Takeru 1,Hirano Shigeru 1,Orihara Misao 1,2,Hijikata Yasuto 1,Yaguchi Hiroyuki 1,2,Yoshida Sadahumi 1,2
	11	Crystal Growth of cubic InN on YSZ(001) substrate by RF-MBE	The Univ. of Tokyo　*Nakamura Teruyuki, Kohno Masatoshi, Katayama Ryuji, Onabe Kentaro
		Lunch 12:00〜13:00
29p-C-　/ I
△	1	Growth of nanocolumnar InN by RF-MBE	Ritsumeikan Univ 1, Center for Promotion of the COE Program 2 　*Nishikawa Seiji 1, Nakao Yoriko 1, Naoi Hiroyuki 2, Araki Tutomu 1, Na Hyunseok 2, and Nanishi Yasushi 1, 2
	2	Influence of initial growth process in cubic-InN on GaAs substrate grown by ECR-plasma assisted MBE	Osaka Inst.of Tech,1　*Tgagawa Sumito,Shimada Teruya, Ishii Keita,Nishimoto Akira,Hidaka Shirou,Segawa Koushi,Hirakawa Zyunniti,Harada Yoshiyuki,Yodo Tokuo
	3	Growth of InN layer by RF-MBE and characterization of its electrical properties (2)	Hokkaido Inst. Tech.　*Ise Kyosuke 1, Takahashi Kensuke 1,Sawada Takayuki 1,Imai Kazuaki 1,Kitamori Kazutaka1
	4	Effects of ion damage reduction due to N2+ on InN film growth on Si substrate by ECR-MBE method	Ele .Info.Osaka Inst.of Tech. 1,Eng. andAppl. Phys.Osaka Inst.of Tech.2　*Shimada Teruya 1,Tagawa Sumito 1,Nishimoto Akira 1,Hidaka Shiro 1,Ishii keita 1,Segawa Hiroshi 1,Hirakawa Junichi 1,Harada Yoshiyuki 2,Yodo Tokuo 1
△	5	Growth of Mg-doped InN by RF-MBE	Dept. of Photonics, Ritsumeikan Univ. 1, Center for Promotion of the COE Program, Ritsumeikan Univ. 2　*Muto Daisuke 1, Naoi Hiroyuki 2, Takado Shinya 1, Na Hyunseok 2, Araki Tsutomu 1, Nanishi Yasushi 1, 2
	6	Reduction of threading dislocation density in InN regrown on micro-faceted InN template	Dept. of Photonics 1, Center for Promotion of the COE Program 2, Ritsumeikan Univ.　*Tsutomu Araki 1, Daisuke Muto 1, Takanobu Akagi 1, Hiroyuki Naoi 2, Yasushi Nanishi 1, 2
	7	Non-polar InN films grown on m-ZnO substrates using low temperature GaN buffer layers	The Univ. of Tokyo 1, KAST 2, The Univ. of Tokyo 3　*Mitamura Kazuya 1, Kobayashi Atsushi 1, Ohta Jitsuo 1,2, Oshima Masaharu 3, Fujioka Hiroshi 1,2
	8	Growth temperature dependence of the size and density of In-polarity InN dots on Ga-polarity GaN	Dept. of Electronics & Mechanical Eng., Chiba Univ.1, VBL, Chiba Univ.2, InN project as a CREST-program of JST, Chiba Univ. 3　*Nakayama Ryo 1,Hashimoto Naoki 1,Kikukawa Naohiro 1,Che Song-Bek 123,Ishitani Yoshihiro 123,Yoshikawa Akihiko 123
		Break 15:00〜15:15
	9	Characterization of structural properties of the In-polairy InN/In0.7Ga0.3N MQWs	Dept.of Electronics and Mechanical Engineering, Chiba Univ.1, VBL, Chiba Univ.2, InN-Project as CREST-program ofJST, Chiba University 3　*Che Songbek 123, Mizuno tomoyasu 1, Shinada takuro 1, Ishitani Yoshihiro 123, Yoshikawa Akihiko 123
	10	Built-in potential in In0.78Ga0.22N/InN multiple-quantum-well structures(II)	Ritsumeikan University　T. Kumamoto, M. Yamamoto, K. Kasahara, M. Kurouchi, T. Araki, Y. Nanishi
	11	Characterization of In-rich InGaN by spectroscopic ellipsometry	Saitama Univ. 1, Chiba Univ. 2, CREST, JST 3　Yusuke Tsukagoshi 1, Misao Orihara 1,3, Yasuto Hijikata 1, Hiroyuki Yaguchi 1,3, Sadahumi Yoshida 1,3, Song-Bek Che 2,3, Yoshihiro Ishitani 2,3, Akihiko Yoshikawa 2,3
	12	Fabrication and chracterization of InN/InAlN hetero and MQWs structure nanocolumns on Si(111) substrate by RF-MBE	Sophia Univ. 1,CREST 2　*Kamimura Jumpei 1,Ishizawa Shunsuke 1,2,Kikuchi Akihiko 1,2,Kishino Katsumi 1,2
△	13	Growth of A-plane In-rich InGaN on R-plane sapphire by RF-MBE	Ritsumeikan Univ. 1, Center for Promotion of the COE Program 2　*Mitsuhiko Noda 1, Yuya Kumagai 1, Sinya Takado 1, Daisuke Muto 1, Hyunseok Na 2, Hiroyuki Naoi 2, Tsutomu Araki 1, Yasushi Nanishi 1,2
	14	Effects of low-temperature nitridation of sapphire substrates on the crystal quality of In-rich InAlN films grown by RF-MBE	COE, Ritsumeikan Univ. 1, Dept. of Photonics, Ritsumeikan Univ. 2　*Naoi Hiroyuki 1, Fujiwara Keisuke 2, Sawada Shinya 2, Takado Shinya 2, Muto Daisuke 2, Na Hyunseok 1, Araki Tsutomu 2, Nanishi Yasushi 1,2
△	15	Improvement on surface morphology of In-rich InGaN layers by low temperature InGaN interlayers	Dept. of Photonics 1, Center for Promotion of the COE Program 2, Ritsumeikan Univ.　*Shinya Sawada 1, Hyunseok Na 2, Shinya Takado 1, Hiroyuki Naoi 2, Tsutomu Araki 1, and Yasushi Nanishi 1, 2
	16	Analysis of InAlGaN thin films by high-resolution RBS	Yamaguchi Univ. 1　*Hiroaki Sakuta 1,Tsutomu Miyachi 1,Satoshi Kurai 1,Tsunemasa Taguchi 1
13.4 III-V Nitride Epitaxial Growth
August 29 (Tue.) 9:00〜17:30
29a-E-　/ I
	1	Selective Growth of GaN Nanocolumns by Al Thin Layer on Substrate	Sophia Univ. 1, CREST, JST 2　Ishizawa Shunsuke 1,2, Sekiguchi Hiroto 1,2, Kikuchi Akihiko 1,2, Kishino Katsumi 1,2
	2	Fabrication of GaN dot structure on Si(111) by droplet epitaxy-Effects of RF plasma power	Dept. of Materials Science & Engineering,Meijo Univ 1,Meijo Univ.21stCENTURY COE "NANO FACTORY"　Otsubo Hiroaki 1,Matsuoka syuuji 1,Matuoka Sota 1,Yamamoto Yo 2,Narituka Sigeya 1,2,Maruyama Takahiro 1,2
	3	Influences of nitrogen plasma on GaN growth on Si substrate by ECR-MBE growth method	Ele.Info.Osaka Inst of Tech. 1,　Com.Eng.Osaka Inst of Tech. 2　*Shiraishi Yuki 1,Hirata Kiyotaka 1,Tomita Hiroaki 1,Nishie Akinori 1,Iwata Keigo 1,Harada Yoshiyuki 2,Yodo Tokuo 1
	4	Photoluminescence spectra of GaN layers grown by CS-MBE using GaN powder and ammonia as sources	Kogakuin Univ.　*Masaru Sawada1, Masatosi Sawadaisi1, Kouiti Sugimoto1, Masatosi Arai 1, Touru Honda 1
	5	Characterization of High-Al-Content AlGaN Layer Formed During the Growth of AlN/GaN Strain Reduction Layer on Si Substrate by Ammonia MBE	Nippon Inst. of Technol. 1,Epitec, Inc. 2　Suzuki Toshimasa 1,2,Yoshino Kenta 1,Sasaki Takanori 1,Oishi Shota 1,Kim Seong-Woo 1
		Break 10:15〜10:30
	6	Theoretical study of influence of hydrogen coverage of Si(111) substrate on GaN buffer layer growth	Kyushu Univ. 1, Tokyo Univ. A & T 2　*Matsuo Yuriko 1, Kangawa Yoshihiro 1, Togashi Rie 2, Kakimoto Koichi 1, Koukitu Akinori 2
	7	Photoluminescence in GaN-related semiconductors on Si	Osaka kyoiku Univ.1　Junpei Kawanaka 1
	8	Effect of Al doping in (1-101)GaN grown on a patterned (001)Si substrate	Nagoya Univ. 1　Hikosaka Toshiki 1, Koide Norikatsu 1, Honda Yoshio 1, Yamaguchi Masahito 1, Sawaki Nobuhiko 1
	9	Growth of GaN wire on a patterned Si substrate	Nagoya Univ. 1　*Onoe Takeo 1, Kim Eun-hee 1, Narita Tetsuo 1, Honda Yoshio 1, Yamaguchi Masahito 1, Sawaki Nobuhiko 1
	10	Growth of GaN nanorods on patterned Si substrates	ISIR, Osaka Univ.　M. Terayama 1, *S. Hasegawa 1, H. Asahi 1
	11	Polarities of GaN films and 3C-SiC intermediate layers on Si (111) substrates by MOVPE	Toshiba Ceramics　*Jun Komiyama,Yoshihisa Abe, Shunichi Suzuki, Hideo Nakanishi
		Lunch 12:00〜13:00
29p-E-　/ I
	1	Surface treatment of 6H-SiC(1-100) substrates for heteroepitaxial growth of nonpolar nitride	Sixon 1.Kyoto Univ 2　*Yoshioka Yoshimitsu 1,Nishiguchi Taro 1,Ikeda Kei-ichi 1,Hayashi Toshihiko 1 KinoshitaHiroyuki 1,Horita Masahiro 2, Suda Jun 2,Kimoto Tsunenobu 2
	2	High-temperature Gas Etching of SiC (0001) substrates for Nitride Heteroepitaxy	Kyoto Univ. 1, SiXON 2　*Jun Suda 1, Tsunenobu Kimoto 1, Yoshimitsu Yoshioka 2, Taro Nishiguchi 2, Kei-ichi Ikeda 2, Toshihiko Hayashi 2, Hiroyuki Kinoshita 2
	3	In situ gravimetric monitoring of decomposition rate on (0001) c-plane sapphire	Dept. Appl. Chemistry, Tokyo Univ. of Agri. & Tech.　*Akiyama Kazuhiro 1,Araki Takuto 1,Murakami Hisashi 1,Kumagai Yoshinao 1, Koukitu Akinori 1
	4	First-principles study on dissociation energy of N2 molecule on Ga-Na liquid surface	NGK Insulators, ltd. 1　Yamamura Yoshihiko 1
	5	Theoretical Study on the Effects of Additives in the Na flux method	Dept. of Engineering, Osaka Univ. 1, ISIR, Osaka Univ. 2, RICS, AIST 3　Kawahara Minoru 1, Kawamura Fumio 1, Yoshimura Masashi 1, Mori Yusuke 1, Sasaki Takatomo 1, Yanagisawa Susumu 2, Morikawa Yoshitada 2,3
△	6	The improvement of the structure of GaHx production for the growth of GaN crystals with high growth rate by GaH-VPE.	Osaka Univ. 1　*Imade Mamoru 1, Kitano Yoshihiro 1, Yamada Norihide 1, Kawamura Fumio 1, Kawahara Minoru 1, Yoshimura Masashi 1, Kitaoka Yasuo 1, Mori Yusuke 1, Sasaki Takatomo 1
	7	Growth of GaN single crystals by Na-flux method using Hot Isostatic Pressure equipment 2	NGK Insulators LTD. 1, Graduate school of Eng. Osaka Univ. 2　Makoto Iwai 1, Shuhei Higashihara 1, Katsuhiro Imai 1, Yusuke Mori 2, Takatomo Sasaki 2
	8	The Effect of Thermal Convection on LPE Growth of GaN Single Crystal in the Na flux Method	The Graduate School of Engeering, Osaka univ.　*Ryohei Gejo 1, Masaki Tanpo 1, Masanori Morishita 1, Naoya Miyoshi 1, Minoru Kawahara 1, Fumio Kawamura 1, Masashi Yoshimura 1, Yusuke Mori 1, Takatomo Sasaki 1
		Break 15:00〜15:15
	9	Bulk a-GaN growth on r-plane sapphire by direct synthesis method	Inst. of Tech. and Sci., The Univ. of Tokushima 1, Faculty of Eng., The Univ. of Tokushima 2　Nishino Katsushi 1,2, Sakamoto Akira 2, Sakai Shiro 1,2
△	10	Growth and characterization of millimeter-sized GaN crystals by carbothermal reduction and nitridation of Ga2O3	Hokkaido Univ 1, NIMS 2　*Akira Miura 1, Shiro Shimada 1, Takashi Sekiguchi 2
	11	First-principles calculation and X-ray absorption fine structure analysis of Fe doping mechanism for semi-insulating GaN growth on GaAs starting substrates	Tokyo Univ. of Agri. & Tech. 1, Sumitomo Electric Ind., Ltd. 2　*Togashi Rie 1, Satoh Fumitaka 1, Murakami Hisashi 1, Iihara Junji 2, Yamaguchi Koji 2, Kumagai Yoshinao 1, Koukitu Akinori 1
	12	Single crystal growth of AlN on 6H-SiC by sublimation method	Fujikura Ltd. 1, RISE, Waseda Univ. 2　Kamata Hiroyuki 1, Ishii Yuu 1, Mabuchi Toshiaki 1, Naoe Kunihiro 1, Ajimura Shoji 1, Sanada Kazuo 1, Ichinose Noboru 2
	13	Growth of AlN single crystals using Sn-based flux	Graduate School of Eng., Osaka Univ. 1, NGK Insulators, LTD. 2, TOYODA GOSEI CO., LTD 3　Arai Masaki 1, Bessho Masahiro 1, Miyoshi Naoya 1,Kawahara Minoru 1, Kawamura Fumio 1, Yoshimura Masashi 1, Mori Yusuke 1, Sasaki Takatomo 1, Iwai Makoto 2, Higashihara syuhei 2, Imai Katsuhiro 2, Yamasaki Shirou 3
	14	Solution growth of thick AlN　single crystalline film under atmospheric pressure	Sumitomo Metal Industries, Ltd., Corporate R&D Lab.　Kazuhito Kamei 1, Yoshihisa Shirai 1, Akihiro Yauchi 1, Tsutomu Tanaka 1, Nobuhiro Okada 1
	15	High-temperature and high-speed epitaxial growth of AlN by hydride vapor phase epitaxy	Tokuyama Co. 1, Tokyo Univ. of Agri. & Tech.　*Nagashima Toru 1 2, Harada Manabu 1, Yanagi Hiroyuki 1, Kumagai Yoshinao 2, Koukitu Akinori 2, Takada Kazuya 1
	16	Growth of bulk AlGaN by direct synthesis method with TMA	Inst. of Tech. and Sci., The Univ. of Tokushima 1, Faculty of Eng., The Univ. of Tokushima 2　Nishino Katsushi 1,2, Miyamura Takashi 2, Sakai Shiro 1,2
	17	AlGaN Growth on (0001)sapphire substrate by hydride vapor phase epitaxy	Furukawa Co.Ltd.　AlGaN Growth on (0001)sapphire substrate by hydride vapor phase epitaxy
13.4 III-V Nitride Epitaxial Growth
August 30 (Wed.) 9:00〜17:45
30a-C-　/ I
	1	Optical properties of GaAsN/GaAs strained quantum well grown on a (411)A substrate	Osaka City Univ. 1, Sumitomo Electric Industries Ltd. Transmission Devices R&D Lab. 2　Hashimoto Jun 1,Iguchi Yasuhiro 2,Takagishi Sigenori 2,Nakayama Masaaki 1
	2	Fabrication of GaN films by Direct Type Near-Atmospheric Plasma-Assisted Chemical Vapor Deposition	NIMS 1, Sekisui Chemical Co. Ltd. 2　*Nagata Takahiro 1, Sakuma Yoshiki 1, Anzai Jyunichiro 2, Kunugi Shyunsuke 2, Uehara Tsuyoshi 2, Chikyou Toyohiro 1
	3	Fabrication of GaN crystallites oxidized its surface and its cathodoluminescence spectra	Kogakuin Univ. 1　*Taichi Baba 1, Makiko Watanabe 1, Takashi Okuhata 1, Tohru Honda 1
	4	Position Dependence of a Void Layer in a GaN/Sapphire Film by Oblique-Incidence Infrared Reflection	Kumamoto Univ. Grad. 1, kumamoto Univ. 2, Nagoya Inst. 3　*Hiroaki Kitsuki1, Eriko Nonaka 2, Kazuya Saiki 1, Hiroyuki Yokoi 1, Junji Watanabe 1, Noritaka Kuroda 1, Hiroyasu Ishikawa 3,Takashi Egawa 3
	5	Depth profile of strain in GaN/AlN/SiC heterostructures by DUV micro-Raman spectroscopy	AIST PERC1, FED2, Nihon Univ.3　*Kitamura Toshio 1, Nakashima Shinichi 1, Mitani Takeshi 1, Nakamura Nayuha 1,3, Furuta Kei 2, Okumura Hajime 1
		Break 10:15〜10:30
	6	Nano-scale crystalline analysis of GaN with metal-tip enhanced Raman spectroscopy	Osaka Univ. 1, RIKEN 2, CREST 3　*Matsui Ryota 1, Ichimura Taro 1, Verma Prabhat 1, Kawata Satoshi 1,2,3, Inouye Yasushi 1,2,3
	7	Photoluminescence due to inelastic scattering processes of excitons in a GaN thin film grown by metalorganic vapor phase epitaxy	Dept. of Appl. Phys., Osaka City Univ. 1,Toyoda Gosei Co. Ltd. 2　*Tanaka Hiroyasu 1,Ando Masanobu 2,Uemura Toshiya 2,Nakayama Masaaki 1
△	8	Photoluminescence study of Mg-doped p-type semipolar (10-1-1) GaN grown by MOVPE	Univ. of Tsukuba 1, NICP/ERATO-JST 2, UCSB 3, Waseda Univ. 4, NIMS 5　*Onuma Takeyoshi 1,2, Asamizu Hirokuni 3, Sato Hitoshi 3, Kaeding F. John 3, Iza Mike 3, Koyama Takahiro 1,2, Fini T. Paul 2,3, DenBaars P. Steven 2,3, Speck S. James 2,3, Nakamura Shuji 2,3, Sota Takayuki 4, Uedono Akira 1,5, Chichibu F. Shigefusa 1,2
△	9	Influence of growth temperature and V/III ratio on optical properties of AlN	Univ. of Tsukuba 1, NICP/ERATO-JST 2, UCSB 3, Waseda Univ. 4, NIMS 5　*Koyama Takahiro 1,2, Sugawara Mariko 1, Hoshi Takuya 1, Kaeding F. John. 3, Rajat Sharma 3, Onuma Takeyoshi 1,2, Keller Stacia 3, Mishra K. Umesh 3, DenBaars P. Steven 2,3, Nakamura Shuji 2,3, Sota Takayuki 4, Uedono Akira 1,5, Chichibu F. Shigefusa 1,2
▲△	10	Influence of Si doping on structural and optical properties of AlGaN/AlN MQWs	Mie Univ. 1, NGK 2　*Li Da-Bing 1,Katsuno Takuya 1,Aoki Masakazu 1,Miyake Hideto 1,Hiramatsu Kazumasa 1,Shibata Tomohiko 2
	11	Temperature dependence of Excitons Luminescence Spectra and Time Resolved Decay Curves of AlGaN Alloy	Fukui Univ. 1,Kanazawa Univ. 2,Mie Univ. 3　　*Nakagawa Naoto 1, Fukui Kazutoshi 1, Naoe Syunichi 2, Miyake Hideto 3, Hiramatsu Kazumasa 3
		Lunch 12:00〜13:00
30p-C-　/ I
	1	Temperature dependence of spin relaxation time of acceptor-bound exciton in wurtzite GaN	Waseda Univ. 1　*Fujita Taisuke 1, Otake Hirotaka 1, Nakazima Masato 1, Tackeuchi Atsushi 1
△	2	Energy relaxation of hot carriers photo-excited in InGaN	Waseda Univ. 1　*Ushiyama Takafumi 1, Fujita Taisuke 1, Lu Shulong 1, Tackeuchi Atsushi 1
	3	Spin effect in InGaN – coherent dynamics and contribution of energy relaxation	Chiba Univ. 1,2, Univ. Tokyo 3,4　*T. Matsusue 1, Y. Itoh 1, H. Bando 1, H. Mino 2, M. Arita 3, Y.Arakawa 3,4
	4	Effects of Alloy Composition Fluctuation of In-rich InxGa1-xN Crystals on Raman and Infrared Reflection Spectra	Dept of Engineering Chiba University 1, Venture Business Laboratory, Chiba University 2, InN-Project as a CREST Program of JST, Chiba University 3　*Fujiwara Masayuki 1, Ishitani Yoshihiro 123, Shinada Takuro 1, Che Song-Bek 123, Yoshikawa Akihiko 123
	5	Optical characterization of InGaN alloys with high InN mole fraction	Engineering Chiba Univ. 1, VBL Chiba Univ. 2, JST-CREST 3　*Yoshihiro Ishitani 1,2,3, Masayuki Fujiwara 1, Takurou Shinada 1, Sonbek Che 1,2,3, Akihiko Yoshikawa 1,2,3
	6	First-principles study of the equation of state of InGaN	Yokyo Univ. of Science 1　*Mukose Kiichiro 1
	7	Theoretical study of influence of growth condition on atomic arrangement in InGaN	Kyushu Univ. 1, Mie Univ. 2, Tokyo Univ. A & T 3　*Kangawa Yoshihiro 1, Kakimoto Koichi 1, Ito Tomonori 2, Koukitu Akinori 3
	8	Analysis of In composition in GaInN/GaN quantum well structures by X-ray CTR scattering method	Nagoya Univ. 1, Nagoya Univ. VBL 2, Mitsubishi Electric 3, Mitsubishi Cable Industries 4　Ohtake Yusuke 1, Tabuchi Masao 2, Takemi Masayoshi 3, Okagawa Hiroaki 4, Takeda Yoshikazu 1
△	9	Photoluminescence from InGaN quantum wells grown on slightly misoriented GaN substrates	Toshiba Corp. 1　Tachibana Koichi 1, Nago Hajime 1, Nunoue Shin-ya 1
		Break 15:15〜15:30
	10	Temperature dependence of optical properties of InGaN MQWs on free-standing GaN substrates grown by MOVPE	Mitsubishi Electric Corporation 1,Mitsubishi Cable Industries,Lrd. 2　*Akihito Ohno 1,Nobuyuki Tomita 1,Tomoo Yamada 2,Hiroaki Okagawa 2,Masayoshi Takemi 1
△	11	Homoepitaxial growth of GaN on GaN{11-22} substrates	Kyoto Univ. 1, Nichia Corp. 2　*Masaya Ueda 1, Kazunobu Kojima 1, Mitsuru Funato 1, Youichi Kawakami 1, Yukio Narukawa 2, Takashi Mukai 2
	12	Optical characterization of (11\overline{2}0)-oriented InGaN films by low-temperature cathodoluminescence	Tokyo Univ. of Science 1,JST ERATO 2　*Furuzuki Tokuma 1,Kusakabe Kazuhide 1,Yamazaki Takashi 1,Hashimoto Iwao 1,Ohkawa Kazuhiro 1 2
	13	Investigation of InGaN Films in a-Plane InGaN/GaN LED grown by MOCVD	The Univ. of Tokushima 1,Samsung Electro-Mechanics 2　*Kenji Ikeda 1, Rakjun Choi 1, Tetsuya Fukumoto 1, Katsushi Nishino 1, Yoshiki Naoi 1, Shiro Sakai 1,Soo Min Lee 2, Masayoshi Koike 2
△	14	Investigation of optical gain spectra and anti-guiding factors of c-plane InxGa1-xN/ In0.02Ga0.98N quantum wells	Dept. Electron. Sci. & Eng., Kyoto Univ. 1,Dept. Phys. Regensburg Univ 2, Nichia Corporation 3 　Kazunobu Kojima 1, Mitsuru Funato 1, Yoichi Kawakami 1, Harald Braun 2, Ulrich T. Schwarz 2, Shinichi Nagahama 3, Takashi Mukai 3
	15	PL Properties of Localized Excitons in InGaN Quantum Wells in Laser Diode Structures	NTT Basic Res. Labs. 1　Gotoh Hideki 1, Akasaka Tetsuya 1, Tawara Takahiko 1, Kobayashi Yasuyuki 1, Makimoto Toshiki 1, Nakano Hidetoshi 1
	16	Issues of localized excitons in In-containing III-nitride semiconductor alloys	Univ. Tsukuba 1, NICP-ERATO JST 2, NIMS 3, UCSB 4, Meijo Univ. 5, Yale Univ. 6, Waseda Univ. 7　Chichibu Shigefusa 1,2, Uedono Akira 1,3, Onuma Takeyoshi 1,2, Haskell Benjamin 2,4, Chakraborty Arpan 4, Koyama Takahiro 1,2, Fini Paul 2,4, Keller Stacia 4, DenBaars Steven 2,4, Speck James 2,4, Mishra Umesh 4, Nakamura Shuji 2,4, Yamaguchi Shigeo 5, Kamiyama Satoshi 5, Amano Hiroshi 5, Akasaki Isamu 5, Han Jung 6, Sota Takayuki 7
	17	Internal quantum efficiency of InGaN-based quantum wells under selective excitation of active layers	Yamaguchi Univ. 1, Mitsubishi Cable Industries 2　*Shinomura Naohiko 1, Iwamura Kazuto 1, Yamada Yoichi 1, Taguchi Tsunemasa 1, Kudo Hiromitsu 2, Okagawa Hiroaki 2
△	18	Optical property assessment of multi-color emission InGaN/GaN micro-facet quantum wells	Dept.Elec.Sci.&Eng. Kyoto Univ. 1, Nichia corporation 2　*Kondou Takeshi 1, Ueda Masaya 1, Hayashi Keita 1, Funato Mitsuru 1, Narukawa Yukio 2, Mukai Takashi 2, Kawakami Youichi 1
13.4 III-V Nitride Epitaxial Growth
August 30 (Wed.) 9:00〜17:45
30a-E-　/ I
	1	A molecular dynamics simulation of thermal conductivity of GaN/AlN quantum dots	Kyushu Univ. 1, Research Institute for Applied Mechanics, Kyushu Univ. 2　*Kawamura Takahiro 1, Kangawa Yoshihiro 2, Kakimoto Koichi 2
	2	Thermal stability and fold effect of flexible piezoelectric sensors using AlN thin films	AIST 1　Akiyama Morito 1, Fujimori Yukari 1, Kamohara Toshihiro 1, Ooishi Yasunobu 1, Kishi Kazushi 1, Naohiro Ueno 1
	3	Influence of sputtering pressure on piezoelectric response of AlN thin films	AIST 1,Kyushu Univ. 2, DENSO CORPORATION 3　*Kamohara Toshihiro 1,2,Akiyama Morito 1,Ueno Naohiro 1,Sakamoto Michiru 1,Kano Kazuhiko 3, Teshigawara Akihiko 3, Kawahara Nobuaki 3, Kuwano Noriyuki 2
▲△	4	Epitaxial growth of AlN films on single-crystalline W(110) substrates	The Univ. of Tokyo1, KAST 2 　*G. Li1, S. Inoue1, K. Okamoto1, T. Nakano2, and H. Fujioka1, 2
	5	Initial stage of AlN epitaxial growth on 4H-SiC(0001) substrates at room temperature.	The University of Tokyo 1,2,4, KAST 3.　*Kim MyungHee 1, Ohta Jitsuo 2,3, Kobayashi Atsushi 2, Fujioka Hiroshi 2,3, and Oshima Masaharu 1,4.
		Break 10:15〜10:30
	6	Epitaxial growth of semipolar AlN on MgO substrates	The University of Tokyo 1, KAST 2　*Kawano Satoshi 1, Kobayashi Atsushi 1, Ohta Jitsuo 1,2, Fujioka Hiroshi 1,2
	7	Room-temperature epitaxial growth of AlN on ZnO substrates	The University of Tokyo 1,Kanagawa Academy of Science and Technology 2　*Ueno Kohei 1,Kobayashi Atsushi 1,Ohta Jitsuo 1,2,Fujioka Hiroshi 1,2
	8	Epitaxial growth of AlN films on Ru(0001) substrates	The Univ. of Tokyo 1, KAST 2　*Inoue Shigeru 1, Okamoto Kouichiro 1, Nakano Takayuki 2, Fujioka Hiroshi 1,2
	9	Epitaxial growth of GaN films on FeSi substrates by the use of low temperature AlN buffer layers	The Univ. of Tokyo 1, KAST 2, Nippon Steel Corp. 3　*Okamoto Koichiro 1, Inoue Shigeru 1, Nakano Takayuki 2, Ohta Jitsuo 1,2, Fujioka Hiroshi 1, Ushigami Yoshiyuki 3
	10	Growth of AlN on c-plane sapphire by ammonia-source MBE	Waseda Univ. 1　Koretsune Kosuke 1, Hiratsuka takato 1, Kawaharazuka Atsushi 1, Horikoshi Yoshiji 1
△	11	Non-polar 4H-AlN with low dislocation density grown on 4H-SiC (11\overline{2}0) substrate nearly coherently	Kyoto Univ.　*Masahiro Horita 1, Jun Suda 1, Tsunenobu Kimoto 1
		Lunch 12:00〜13:00
30p-E-　/ I
	1	Influence of source gas supply on HVPE growth of AlN on sapphire(0001) substrate	Tokyo Univ. of Agri. & Tech. 1, Tokuyama Corp. 2　*Obuchi Hirotaka 1, Harada Manabu 2, Nagashima Toru 2 1, Kumagai Yoshinao 1, Koukitu Akinori 1
	2	Optimum strain along a-axis for high quality (0001) c-plane AlN	Kohgakuin University　*Niikura Eiichiro 1.Yamaguchi Itaru 1.Wako Masahito 1.Kawanishi Hideo 1
△	3	Reaction pathways of AlN-MOVPE in TMAl/NH3/H2 system	Tokyo Univ. of Science 1, JST ERATO 2 　*Uchida Takeshi 1,Kusakabe Kazuhide 1,Ohkawa Kazuhiro 1 2
	4	Characterization of the polarity of AlN films grown by MOCVD on 4H-SiC with Al interlayer	Tokai Univ. 1　*Higo Masaaki 1, Inushima Takashi 1, Miyamoto Ysuo 1
	5	Growth of AlN on Ru/Ta/SiO2/Si (100) by MOCVD	Tohoku Univ. Riec 1　Sakyu Yasuomi 1,Aota Yuji 1,Tanifuji Shoichi 1,Oguma Hiroshi 1,Kameda Suguru 1,Nakase Hirohuki 1,Takagi Tadashi 1,Tsubouchi Kazuo 1
	6	Microstructure and control of defects in AlN epilayer grown by HT-MOVPE	Meijo Univ. 1, Ibiden Co. Ltd. 2, Showa Denko K.K. 3　Imura Masataka 1, Kato Naofumi 1, Sato Shuya 1, Sumii Takafumi 1, Fujimoto Naoki 1, Okada Narihito 1, Iwaya Motoaki 1, Kamiyama Satoshi 1, Amano Hiroshi 1, Akasaki Isamu 1, Krishnan Balakrishnan 1, Noro Tadashi 2, Takagi Takashi 2, Bandoh Akira 3
	7	Growth of AlN film by remote-plasma-assisted MOCVD	Osaka Univ. 1　*Shinji Tokuyama 1,Chiharu Kimura 1,Hidemitsu Aoki 1,Takashi Sugino 1
	8	Growth of (11\overline{2}0)- and (1\overline{1}00)-oriented AlN films by flow-rate modulation epitaxy	NTT Basic Research Labs.　Akasaka Tetsuya, Kobayashi Yasuyuki, Makimoto Toshiki
		Break 15:00〜15:15
	9	Modified flow-modulation MOCVD growth of Al-polar high-quality AlN layers on sapphire	RIKEN 1, Tokyo Tech. 2, TOKUYAMA 3　Misaichi Takeuchi 1,2, Hiroshi Shimizu 2, Ryo Kajitani 2, Koji Kawasaki 2, Toru Kinoshita 3, Kazuya Takada 3 and Yoshinobu Aoyagi 2,1
	10	The influence AlN templates on crystalline quality of AlGaN layers for deep UV LED.	Tokyo Institute of Technology1, RIKEN2　Shimizu Hiroshi, Takeuchi Misaichi, Kajitani Ryo, Kawasaki Koji, Aoyagi Yoshinobu
△	11	Epitaxial lateral overgrowth of a-plane AlN on r-plane sapphire substrate by HT-MOVPE	Fac. Sci. & Technol., 21st Cen. COE“Nano-Factory”, Meijo Univ.1, Ibiden Co. Ltd.2, Showa Denko K.K.3　*Narihito Okada1, Naoki Kato1, Syuya Sato1, Takafumi Sumii1, Naoki Fujimoto1, Masataka Imura1, Krishnan Balakrishnan1, Motoaki Iwaya1, Satoshi Kamiyama1, Hiroshi Amano1, Isamu Akasaki1,Tadashi Noro2, Takashi Takagi2, Akira Bandoh3
	12	Ultraviolet luminescence properties of hexagonal boron nitride heteroepitaxial layers grown by FME	NTT BRL 1, Shonan Institute of Technology 2　*Kobayashi Yasuyuki 1, Nakamura Tomohiro 2, Akasaka Tetsuya 1, Makimoto Toshiki 1, Matsumoto Nobuo 2
	13	Atmospheric growth of AlGaN using ten 2-inch wafers GaN MOCVD system	Taiyo Nissan Co.　*Tokunaga Hiroki 1, Fukuda Yasushi 1, Ikenaga Kazutada 1, Inaishi Yoshiaki 1, Akutsu Nakao 1, Fujii Kinji 1
	14	Diffusion phenomena of source chemical species on an AlGaN/GaN facet structure in low pressure MOVPE	Nagoya Univ.　*Narita Tetsuo 1, Honda Yoshio 1, Yamaguchi Masahito 1, Sawaki Nobuhiko 1
	15	Closs sectional TEM images of strain controlled AlN/AlGaN epitaxial layers	Kogakuin Univ. 1　Kouichi Murakawa 1,Takeaki Nukui 1,Eiichiro Niikura 1,Fumio Hasegawa 1,Hideo Kawanishi 1
	16	Improvement of AlGaN crystal quality by the alternate source feeding epitaxy	Kogakuin Univ. 1,　*Kenichi Isono 1,Eiichirou Niikura 1,Yasuyuki Ohtaki 1,Fumio Hasegawa 1,Hideo Kawanishi 1
△	17	Time resolved photoluminescence spectroscopy in AlGaN/GaN SQW structure grown on a (111) Si substrate	Nagoya Univ., Dept. of Electronics　*Kim Eunhee, Narita Tetsuo, Honda Yoshio, Yamaguchi Masahito, Sawaki Nobuhiko
	18	Compositional distributions in a cross-section of ABLEG-AlGaN ternary alloys by SNOM	Yamaguchi Univ. 1　*Murotani Hideaki 1, Saito Takuya 1, Uchida Ryoko 1, Yamada Yoichi 1, Taguchi Tsunemasa 1
13.4 III-V Nitride Epitaxial Growth
August 31 (Thu.) 9:00〜12:00
31a-C-　/ I
	1	RF-ECR Characteristics of RF-nitrogen flux modulation MBE using RF-discharge mode change	Doshisha　Univ. 1, AriosCo.Ltd. 2　*Shimomura Hiroshi 1, Yamabe Nobuhiko 1, Kikuchi Tomo 1, Ariyada Osamu 2, Ohachi Tadashi 1,
	2	Charastaric of GaN growth on Si substrate by using Nitrogen flux modulation MEE by mode change of Plasma	Doshisha Univ.1,　*Oride Kazuaki 1,Inui Kousuke 1,Kikuti Tomo 1, Ohati Tadashi 1,
	3	III/V flux ratio dependence for GaN polytype grown on Si substrate using combinatorial RF-MBE	Doshisha Univ. 1,　Shibataki Kentaro 1, Kikuchi Tomo 1, Takeda Yoshihiro 1, Ohachi Tadashi 1,
	4	Growth of Al-rich AlInN ternary alloy epitaxial layers on AlN-templates by ammonia-source MBE	Yamaguchi Univ. 1　*Iwata Shiro 1, Nanjo Yoshiyuki 1, Okuno Toshihiro 1, Kurai Satoshi 1, Taguchi Tsunemasa 1
	5	Growth of GaN nanocolumns grown on (0001) sapphire substrate by rf-plasma assisted molecular beam epitaxy	Sophia Univ. 1, CREST JST 2　 Hiroto Sekiguchi 1 2, Takuya Nakazato 1, Akihiko Kikuchi 1 2, Katsumi Kishino 1 2
		Break 10:15〜10:30
	6	Be and Mg co-doped GaN grown by RF-MBE	Waseda Univ.　*Tanimoto Tatsunori 1, Nagai Kenichiro 1, Suzuki Ryotaro 1, Tanaka Yusuke 1, Kawaharazuka Atsushi 2, Horikoshi Yoshiji 1
	7	Dependence of the GaN surface morphology on the inclination direction of sapphire vicinal substrates by MBE	AIST　X.Q. Shen and H.Okumura
	8	Fabrication of polarity-inverted GaN heterostructure by RF-MBE	Dept. of Advanced Materials Science 1, Dept. of Material Engineering 1, The Univ. of Tokyo　Katayama Ryuji 1, Kuge Yoshihiro 1, Matsushita Tomonori 2, Kondo Takashi 2, Onabe Kentaro 1
△	9	Epitaxial growth of high-quality GaN(11-20) on a-plane ZnO using low-temperature buffer layers	IIS, The Univ. of Tokyo 1, KAST 2　*Kobayashi Atsushi 1, Ohta Jitsuo 1,2, Fujioka Hiroshi 1,2
	10	Growth of group III nitrides by pulsed electron beam deposition	IIS, The Univ. of Tokyo 1, KAST 2　*Jitsuo Ohta 1,2, Hiroshi Fujioka 1,2
	11	Epitaxial growth of GaN on 6H-SiC by PED	IIS, The Univ. of Tokyo 1, KAST 2　Sakuma Yoichi 1, Ohta Jitsuo 1,2, Fujioka Hiroshi 1,2
13.4 III-V Nitride Epitaxial Growth
August 31 (Thu.) 9:00〜12:15
31a-E-　/ I
	1	Computational fluid dynamics on reaction pathways of GaN-MOVPE for H2/N2 carrier gases	Tokyo Univ. of Sience 1,JST ERATO 2　*Koiso Saori 1,Uchida Takeshi 1,Iwaki Yasuhiro 1,Kusakabe Kazuhide 1,Ohkawa Kazuhiro 1 2
	2	Crystallographic orientation of GaN films grown on r-plane sapphire by MOVPE	Tokyo Univ. of Science 1, JST-ERATO 2　*Kazuhide Kusakabe 1, Shizutoshi Ando 1, Kazuhiro Ohkawa 1,2
	3	MOVPE growth of GaN on dry etched sapphire substrates	Grad. School of Sci. & Eng.　*Hiraoka Masahiro 1, Yoshimura Kazumasa 1, Hoshino Katsuyuki 1, Tadatomo Kazuyuki 1
△	4	Influence of misorientation of (0001)sapphire substrate on the crystalline quality of GaN layer	Yamaguchi Univ. 1 　*Yanagita Naoto 1, Hoshino Katsuyuki 1, Tadatomo Kazuyuki 1
	5	Direct growth of a-plane GaN on r-plane sapphire substrate by MOVPE	Yamaguchi Univ.1　*Masahiro Araki, Noriaki Mochimizo, Katsuyuki Hoshino, Kazuyuki Tadatomo
△	6	Two-step-growth of a-plane GaN on r-plane sapphire substrate by MOVPE	Yamaguchi Univ. 1　*Mochimizo Noriaki, Araki Masahiro, Hoshino Katsuyuki, Tadatomo Kazuyuki
		Break 10:30〜10:45
	7	MOVPE growth of GaN by pulse injection method	The Univ. of Tokyo 1,RCAST 2,JST-SORST,3　*Yang Jung-Seung 1,3,Masakizu Sugiyama 1,3,Yosiaki Nakano 2,3,Yukihiro Shimogaki 1,3
	8	Photoelectrochemical properties of p-n nitride photocatalysis (I) Enhancement of H2 generation	Tokyo Univ. of Science 1,JST-ERATO 2,Tohoku Univ. 3　Ono Masato 1, Iwaki Yasuhiro 1, Yamaguchi Kazuki 1, Ito Takashi, Kusakabe Kazuhide 1, Fujii Katsushi 2,3, Ohkawa Kazuhiro 1,2
	9	Photoelectrochemical properties of p-n nitride photocatalysis (II) p-layer thickness dependence	Tokyo Univ. of Science 1,JST ERATO 2,Tohoku Univ. 3　*Iwaki Yasuhiro 1,Ono Masato 1,Kazuki Yamaguchi 1,Kusakabe Kazuhide 1,Hujii Katsushi 2 3,Ohkawa kazuhiro 1 2
	10	Photoelectrochemical properties of n-n+ nitride photocatalysis	Tokyo Univ. of Science 1,JST-ERATO 2,Tohoku Univ.　*Iwaki Yasuhiro 1,Ono Masato 1,Kazuki Yamaguchi 1,Kudo Tomoya 1,Kazuhide Kusakabe 1,Hujii Katsushi 2 3,Ohkawa Kazuhiro 1 2
△	11	Surface structures on GaN and AlGaN after applying electrochemical processes	Graduate School of Information Science and Technology, Hokkaido Univ. 1, Research Center for Integrated Quantum Electronics 2,　*Shiozaki Nanako 1,2, Sato Taketomo 1,2, Hashizume Tamotsu 1,2,
	12	Surface orientation dependency of GaN photoelectrochemical properties	JST-ERATO 1, Tohoku Univ. 2, Tokyo Univ. of Science 3, UCSB 4　*Fujii Katsushi 1,2, Yasuhiro Iwaki 3, Baker Troy 1,4, Iza Mike 1,4, Sato Hitoshi 1,4, Kaeding John 1,4, Yao Takafumi 2, DenBaars Steven 1,4, Nakamura Shuji 1,4, Ohkawa Kazuhiro 1,3
13.4 III-V Nitride Epitaxial Growth
September 1 (Fri.) 9:00〜12:15
1a-C-　/ I
	1	Growth of AlGaN single-crystalline layer by UHV sputtering method（II）	Tokyo Denki Univ 1,　*Koyama Takanori 1,Asami Akinori 1,Imoto Tomohiro 1,Shinoda Hiroyuki 1,Mutsukura Nobuki 1,
	2	Growth of AlGaN single-crystalline layer by UHV sputtering method （III）	Tokyo Denki Univ. 1　*Tomohiro Imoto 1,Takanori Koyama 1,Akinori Asami 1,Hiroyuki Shinoda 1,Nobuki Mutsukura 1
	3	Growth of GaN single-crystalline layer by UHV sputtering method (IV)	Tokyo Denki Univ. 1　*Asami Akinori 1,Koyama Takanori 1,Imoto Tomohiro,Shinoda Hiroyuki 1,Mutsukura Nobuki 1
	4	An increase in sheet resistance with the lapse of time of Al0.3Ga0.7N/GaN-HEMT structure wafers	R&D Association for Future Electron Devices1, Ritsumeikan Univ.2 　*Junjiroh Kikawa1, Tomoyuki Yamada1, Tadayoshi Tsuchiya1, Shinichi Kamiya1, Kenichi Kosaka2, Akihiro Hinoki2, Tsutomu Araki2, Akira Suzuki1,2, and Yasushi Nanishi2
	5	Growth of HEMT Structures Using Quasi-AlGaN Alloy Barriers Made by AlN/GaN Super-Lattice on SiC Vicinal Substrates	FED 1, AIST PERC 2, Nihon Univ. 3　*Furuta Kei 1, Nakamura Nayuha 2,3, Shen Xu-Qiang 2, Shimizu Mitsuaki 2, Kitamura Toshio 2, Nakamura Katsumitsu 3, Okumura Hajime 2
	6	Effects of step-bunchings to electrical properties of AlGaN/GaN HEMT structures grown on SiC vicinal substrates	AIST PERC 1,FED 2,Nihon Univ.3 　*Nakamura Nayuha 1,2,Furuta Kei 2,Kitamura Toshio 1,X.Q.Shen 1,Nakamura Katsumitsu 3,Okumura Hajime 1
		Break 10:30〜10:45
△	7	Current response of AlGaN/GaN open-gate HFET in various kinds of solutions	Hokkaido Univ. 1,RCIQE. 2　*Kokawa Takuya 1,2, Sato Taketomo 1,2, Hashizume Tamotsu 1,2
	8	Fabrication of low ohmic contact using selective area growth with MOCVD	OKI Electric Industry Co., Ltd. 1　*Fumihiko TODA 1, Juro MITA 1, Masanori ITOH 1, Toshiharu MARUI 1, Yoshiaki SANO 1, Shohei SEKI 1
	9	Comparison with GaN on GaN and GaN on sapphire by DLTS	Aichi Inst. of Technology 1,Toyota Central R&D Labs. 2　*Tokuda Yutaka 1,Matsuoka Yoichi 1,Ueda Hiroyuki 2,Soezima Narimasa 2,Ishiguro Osamu 2,Kachi Tetsu 2
△	10	Evaluation of the CxNy/GaN structure formed by ECR-PCVD	RCIQE, Hokkaido Univ. 1　*Kimura Takeshi 1, Hashizume Tamotsu 1
△	11	Growth and electron field emission of GaN nanowire grown by catalyst-assisted MOCVD	Shizuoka Univ. 1,Shizuoka Univ. RIE 2,YAMAHA Co. 3　*Tajima Akinori 1,Inoue Yoku 1,Takeda Satoshi 1,Ishida Akihiro 1,Neo Youitirou 2,Mimura Hidenori 2,Sakakibara Shingo 3
	12	Machining of GaN by Plasma CVM(Chemical Vaporization Machining) (I)	SHARP Corp. 1,Osaka Univ. 2　*Nakahama Yasuji 1,Kanetsuki Norio 1,Funaki Takeshi 1,Kadono Masaru 1, Sano Yasuhisa 2,Yamamura Kazuya 2,Endo Katsuyoshi 2,Mori Yuzo 2
13.4 III-V Nitride Epitaxial Growth
September 1 (Fri.) 9:00〜15:00
1a-E-　/ I
	1	Relation among H concentration, conductivity and photoluminescence of thermally annealed Mg-doped GaN	NAIST 1, Sanyo Electric Co., Ltd. 2　Shimizu Masato 1, *Hata Masayuki 2, Nomura Yasuhiko 2, Shono Masayuki 1,2
	2	Annealing characteristics of p-InGaN/N-GaN vertical diodes	Shonan Inst. of Technology 1, NTT BRL 2　*Sogabe Atsushi 1, Makimoto Toshiki 2, Nishikawa Atsushi 2, Kumakura kazuhide 2, Matsumoto Nobuo 1
	3	Blue luminescence from Zn-doped GaN with {10-11} and {11-22} facets	Mie Univ. 1, Noritake Itron corp. 2　*Nakao Keisuke 1, Miyake Hideto 1, Hiramatsu Kazumasa 1, Kikuta Shigeki 2
	4	Maskless ELO growth of GaN using dimethylhydrazine as a nitrogen precursor	Matsushita Electric Industrial 1　*Takizawa Toshiyuki 1, Shimizu Jun 1, Ueda Tetsuzo 1
	5	Structural Analysis of Maskless ELO-GaN using X-ray Diffraction	Sony Corp. 1, Bruker AXS 2　*Takao Miyajima 1, Keisuke Saito 2, Osamu Goto 1, Masao Ikeda 1, Hironobu Narui 1
		Break 10:15〜10:30
	6	Improvement of the crystalline quality of a-plane GaN with a whole 2 inch wafer using single-step ELO	Meijo Univ. 1　*Iida Daisuke 1,Miura Aya 1,Okadome Yoshizane 1,Tsuchiya Yosuke 1,Kawashima Takeshi 1,Iwaya Motoaki 1,Kamiyama Satoshi 1,Amano Hiroshi 1,Akasaki Isamu 1
	7	Reduction of threading dislocation density over the whole wafer using epitaxial lateral overgrowth	Meijo Univ. 1　Kawashima Takeshi 1, Iida Daisuke 1, Miura Aya 1, Nagai Tetsuya 1, Okadome Yoshizane 1, Tsuchiya Yousuke 1, Iwaya Motoaki 1, Kamiyama Satoshi 1, Amano Hiroshi 1, Akasaki Isamu 1
△	8	Change in morphology of threading dislocation at a hetero interface of AlGaN/AlN.	Kyushu Univ. 1,2, Mie Univ. 3, NGK Insulators Ltd. 4　*Yokote Tatsunori 1, Kuwano Noriyuki 2, Miyake Hideto 3, Hiramatsu kazumasa 3, Shibata Tomohiko 4
	9	Generation of thermal energy in Schottky-type light-emitting diodes	Kogakuin Univ. 1　*Kobayashi Toshiaki 1,Egawa Shinichi 1,Baba Taichi 1,Komiyama Shigetoshi 1,Honda Tohru 1
△	10	Correlation between PL and EL mapping properties for GaN based LEDs	Grad. School of Sci. & Eng., Yamaguchi Univ. 1　*Shimoike Osamu 1, Noda Hiromichi 1, Hiraoka Masahiro 1, Yoshimura Kazumasa 1, Hoshino Katsuyuki 1, Tadatomo Kazuyuki 1
	11	Evaluation of characteristics of IR photodetector using GaN/AlN multiple quantum disk on Si(111) substrate	Sophia Univ.1, CREST 2,　*Uchida Hiroyuki 1,Kikuchi Akihiko 1,2,Kishino Katsumi 1,2,
		Lunch 12:00〜13:00
1p-E-　/ I
	1	The effect of KOH etching on LLO processing for AlGaN LED	RIKEN 1,Matsushita Electric Works 2　Sachie Fujikawa 1,Takayoshi Takano 1,2,Hideki Hirayama 1,Yukihiro Kondo 1,2
	2	Improvement of efficiency in AlGaN-based UV-emitters by reducing threading dislocations（II)	Meijo Univ. 21stCOE, Showa-Denko K.K. 2　*Kazuyoshi Iida 1,Takeshi Kawashima 1, Krishnan Balakrishnan 1,Motoaki Iwaya 1,Satoshi Kamiyama 1,Hiroshi Amano 1, Isamu Akasaki 1, Akira Bandoh 2
	3	Fabrication of AlGaN vertical deep-UV LEDs with a large emission area	Tokyo Inst. Tech. 1, RIKEN 2　Tomohiro Maegawa 1, Koji Kawasaki 1, Misaichi Takeuchi 1 2 , Yoshinobu Aoyagi 1 2
	4	Investigation of high power AlInGaN-based ultraviolet LEDs fabrication using SiN	Univ. of Tokushima 1　Kataoka Ken 1,Okimoto Takashi 1,Niki Takatoshi 1,Sumiyoshi kazuhide 1,Tsukihara Masashi 1,Nishino Katsushi 1,Naoi Yoshiki 1,Sakai Shiro 1
	5	Demonstration of PIN AlN light-emitting diode with a wavelength of 210 nm	NTT BRL 1　*Taniyasu Yoshitaka 1, Kasu Makoto 1, Makimoto Toshiki 1
	6	Electrical Characterization of III-Nitride Light-Emitting Diodes at Low Temperature	Univ. California, Santa Barbara 1, NICP/ERATO JST 2　*Hisashi Masui 1,2, Mathew C. Schmidt1,2, Arpan Chakraborty1, Troy J. Baker1, Michael Iza1, Hong Zhong1, Shuji Nakamura1,2, and Steven P. DenBaars1,2
	7	Blue Light Emitting Diode Fabricated on a-Plane GaN film over r-sapphire substrate and on a-Plane Bulk GaN substrate	Univ. of Tokushima1,Samsung Electro-Mechanics2　 Takashige Hama1, Kota Ono1, Kenji Ikeda1,Rakjun Choi1, Katsushi Nishino1, Yoshiki Naoi1, Shiro Sakai1,Soo Min Lee2, Masayoshi Koike2
	8	Highly Reliable Operation of High Power Inner Stripe Blue-Violet Laser Diodes	NEC Corporation　Ohya Masaki 1, Fukuda Kazuhisa 1, Masumoto Ichirou 1, Koumoto Shigeru 1, Naniwae Koichi 1, Yamada Mitsuki 1, Matsudate Masashige 1, Tsukuda Takumi 1, Akagawa Takeshi 1, Sasaoka Chiaki 1
13.5 Group-IV Crystals and IV-IV Alloys
August 31 (Thu.) 13:30〜18:00
31p-ZG-　/ I
	1	Investigation of doping properties of epitaxially grown Phosphorus-doped Si layers	Hitachi, Ltd., Central Research Laboratory　*Suzumura Isao 1, Oda Katsuya 1
	2	Delta doping in silicon III:Electrical characterization	NIMS 1, AIST 2　Yagi Shuhei 1, Sakamoto Kunihiro 2, Miki Kazushi 1
	3	Surface roughness control of SiGe layer deposited by Ion Beam Sputtering toward strained Si fabrication	Kanazawa Univ. 1　*Yamamoto Jun 1,Sakaguchi Yuta 1,Naruse Kimihiro 1,Sasaki Kimihiro 1
	4	The investigation of the correlation between the SiGe layer crystal quality by X-ray diffraction and growth condition of SiGe layer	Toshiba Ceramics., LTD 1, University of Hyogo 2, CAST 3 　　　*Takeshi Senda 1, Toyoda Eiji 1, Izunome Koji 1, Tsusaka Yoshiyuki 2, Fukuda Kazunori 2, Hayashi Kazuki 2, Matsui Junji 3
	5	Formation of strained SiGe-wire structures	Univ. of Yamanashi 1, IMR Tohoku Univ. 2, Musashi Inst. of Technology 3 　*Shimizu Kana 1, Arimoto Keisuke 1, Yamanaka Junji 1, Nakagawa Kiyokazu 1, Usami Noritaka 2, Sawano Kentarou 3, Shiraki Yasuhiro 3
	6	Influence of growth pressure on Ge epitaxial growth on Si substrate	Central Research Laboratory, Hitachi Ltd.　*Oda Katsuya 1, Suzumura Isao 1
	7	STM observation of initial oxidation and etching processes on Ge(001) surfaces	Graduate School of Eng. 1,ESI 2,CCRAST 3,Nagoya Univ.　Wakazono Yasunobu 1,Yamazaki Masahiro 1,*Sakai Akira 1,Nakatsuka Osamu 2,Takeuchi Syotaro 1,Ogawa Masaki 3,Zaima Shigeaki 1
	8	Crystallinity of supercritical thickness strained-Si/SiGe II	HITACHI CRL　Yoshinobu Kimura, Nobuyuki Sugii, Shin'ichiro Kimura
		Break 15:30〜15:45
	9	Growth and structural evaluation of strain-relaxed Ge1-xSnx buffer layers on virtual Ge(001) substrates	Graduate School of Eng., Nagoya Univ. 1, ESI, Nagoya Univ. 2, CCRAST, Nagoya Univ. 3　Takeuchi Shotaro 1, Sakai Akira 1, Yamamoto Koji 1, Nakatsuka Osamu 2, Ogawa Masaki 3, Zaima Shigeaki 1
	10	Effect of Ge substrate on strain relaxation and dislocation structure in Ge1-xSnx buffer layers	Graduate School of Eng., Nagoya Univ. 1, ESI, Nagoya Univ. 2, CCRAST, Nagoya Univ. 3　Takeutchi Shotaro 1, Sakai Akira 1, Nakatsuka Osamu 2, Ogawa Masaki 3, Zaima Shigeaki 1
	11	Strain Dependence of Hole Effective Mass in Ge-channel Structures	ARL Musashi Inst. of Technology 1, Univ. of Tokyo2 , IMR Tohoku Univ. 3, Univ. of Yamanashi 4　*Y. Kunishi 1, K. Sawano 1, K. Toyama 2, T. Okamoto 2, N. Usami 3, K. Nakagawa 4 and Y. Shiraki 1
	12	Strain dependence of scattering mechanisms in Ge channel structures	Advanced Research Laboratories (ARL) Musashi Inst. of Technology 1, Univ. of Tokyo 2, IMR Tohoku Univ. 3, Univ. of Yamanashi4 　*Kentarou Sawano 1, Kiyohiko Toyama 2, Toru Okamoto 2, Yugo Kunishi 1, Noritaka Usami 3, Kiyokazu Nakagawa 4, Yasuhiro Shiraki 1
	13	Structural analysis of internal strains and fractions in thin SGOIs	NTT Basic Research Labs 1, JASRI 2　*Kawamura Tomoaki 1, Omi Hiroo 1, Kimura Shigeru 2
	14	In-plane strain characterization within a compressive SGOI layer after mesa isolation with in-plane NBD method	MIRAI-ASET 1,MIRAI-ASRC,AIST 2, The Univ. of Tokyo 3　*Koji Usuda 1,Toshinori Irisawa,Toshinori Numata 1,Norio Hirashita 1, and Shin-ichi Takagi 2,3
	15	Fabrication of (110) GOI Layers by Ge Condensation of SiGe/ (110) SOI Structures	School of Engineering 1,4, Graduate School of Frontier Science 2,4, The Univ. of Tokyo, Tokyo Inst. of Technology3 ,School of Engineering 4, 　*Sanjeewa Dissanayake 1, Hiroshi Kumagai 2, Satoshi Sugahara 3 and Shinichi Takagi 4
	16	Growth of Strained Si/Strain-relaxed Si1-yCy structures using SOI substrate	Tokyo Tech 1,QNERC 2　*Ishihara Hanae 1,Murano Masahiko 1,Yamada Akira 2,Konagai Makoto 1
	17	Thermal stability of thick strained SOI(sSOI)	Advanced Research Labo. Musashi Institute of Technology 1, Soitec 2, Soitec Asia 3　*Hoshi Yusuke 1, Fukumoto Atsushi 1, Sawano Kentarou 1, Ian Cayrefourcq 2, Yoshimi Makoto 1,3, Shiraki Yasuhiro 1
13.6 Group-IV Compounds
August 30 (Wed.) 9:30〜17:30
30a-ZG-　/ I
	1	Analysis of Difference of Polytypism in SiC Using Classical Nucleation Theory	Graduate School of Eng., Univ. of Tokyo 1, Nagoya Univ. 2, Univ. of Tokyo 3　*Kubota Yasuhiko 1, Yamaguchi Hiroki 2, Sakiyama Yukinori 3, Takagi Shu 3, Matsumoto Yoichiro 3
	2	Growth of 2H-SiC crystals using Li flux	Osaka Univ.　*Takashi Ogura, Mamoru Imade, Fumio Kawamura, Masashi Yoshimura, Yasuo Kitaoka, Yusuke Mori, Takatomo Sasaki
	3	The observation of SiC bulk al by TEM	Ion Eng. Res. Inst. 1, Sixon 2, Kyoto Inst. of Tech. 3　Masahiko Aoki 1, Megumi Miyazaki 1, Hiroyuki Kinoshita 2, Tarou Nishiguchi 2, Masahiro Yoshimoto 3
	4	Defects in SiC Bulk Single Crystal occurring by High Nitrogen Doping	AIST　*Tomohisa Kato 1, Tomonori Miura 1, Shin-ichi Nishizawa 1, Kazuo Arai 1
△	5	Nondestructive Analysis of Stacking Faults in 4H-SiC Bulk Wafers by Room-Temperature PL Mapping under Deep UV Excitation	ISAS/JAXA 1, Tokyo Univ. 2, SiXON Ltd. 3　Norihiro Hoshino 1,2, Michio Tajima 1,2, Taro Nishiguchi 3, Toshihiko Hayashi 3, Hiroyuki Kinoshita 3, Hiromu Shiomi 3
	6	STM study of 4H-SiC(0001)1×1 surfaces prepared in aqueous environment	Osaka Univ. 1, Kumamoto Univ. 2　Kenta Arima 1, Hideyuki Hara 1, Yasuhisa Sano 1, Hidekazu Mimura 1, Takeshi Ishida 1, Keita Yagi 1, Akihisa Kubota 2, Kazuto Yamauchi 1
		Break 11:00〜11:15
	7	Evaluation of N-doped 6H-SiC Single Crystals by Photoacoustic Spectroscopy	Natl. Def. Acad. 1,SiXON 2　*Taichiro Mori 1,Wutimakun Passapong 1,Hisashi Miyazaki 1,Yoichi Okamoto 1,Jun Morimoto 1,Toshihiko Hayashi 2,Hiromu Shiomi 2
	8	Thermal Diffusivity of 6H-SiC Single Crystal Evaluated by Photopyroeletric (PPE) Method	Natl. Def. Acad. 1,SiXON 2　*Wutimakun Passsapong 1,Mori Taichiro 1,Miyazaki Hisashi 1,Okamoto Youichi 1,Morimoto jun 1,Hayashi toshihiko 2,Shiomi Hiroshi 2
	9	High Throughput SiC Wafer Polishing with Good Surface Morphology	AIST　*Tomohisa Kato 1, Eiji Hozomi 1, Keisuke Wada 1, Hiroyoshi Taniguchi 1, Shin-ichi Nishizawa 1, Kazuo Arai 1
	10	Investigation of high-rate homoepitaxial growth on 4º off-axis 4H-SiC substrates by the close spaced vertically blow type CVD reactor	AIST 1, Saitama Univ. 2　Ishida Yuuki 1, Takahashi Tetsuo 1, Okumura Hajime 1, Arai Kazuo 1, Yoshida Sadafumi 2
	11	TEM observation of origin of surface morphological defects at 4H-SiC substrate/epi-film interface	Tokushima Univ. 1, JSPMI 2, JAIST 3, Kyoto Univ. 4　*Ochi Kengo 1, Tomita Takuro 1, Okada Tatsuya 1, Yamaguchi Makoto 2, Higashimine Kouichi 3, Kimoto Tsunenobu 4
		Lunch 12:30〜13:30
30p-ZG-　/ I
	1	Characterization of electrical properties of SiC epi-layer using Infrared Reflectance spectroscopy	Saitama Univ.　*Oishi Shingo 1,Hijikata Yasuto 1,Yaguchi Hiroyuki 1,Yoshida Sadafumi 1
	2	Dependence of Hole Concentration in Irradiated Al-doped 4H-SiC Epilayer on Fluence of 200 keV Electrons	OECU 1,JAEA Takasaki 2　*Minohara Nobumasa 1,Inagawa Yuusuke 1,Takahashi Miyuki 1,Matsuura Hideharu 1,Ohshima Takeshi 2,Itoh Hisayoshi 2
	3	Polycrystalline SiC Film Deposition Using SiH3CH3 and HCl Gases	Yokohama Nat. Univ. 1　Watanabe Mayuka 1, Nishida Mikiya 1, Sekiguchi Takashi 1, *Habuka HItoshi 1, Takeuchi Takashi 1, Aihara Masahiko 1
△	4	Solution growth of high quality 3C-SiC crystals in temperature gradient	Graduate School of Eng., Nagoya Univ. 1　*Maekawa Ryosuke, Watanabe Kenji, Ujihara Toru, Kuroda Kotaro, Takeda Yoshikazu
	5	Growth kinetics of 3C-SiC on Si (110) using organosilane (II)	CIR, Tohoku Univ. 1, Kyushu Institute of Technology 2　*Konno Atsushi 1, Narita Yuzuru 2, Suemitsu Maki 1
△	6	Low temperature formation of SiO2/SiC structure by the nitric acid oxidation method: Effect of thermal treatment in hydrogen	Osaka Univ. ISIR 1　*Im Sung-Soon 1, Takahashi Masao 1, Kobayashi Hikaru 1
	7	High temperature oxidation of 3C-SiC(100)-OI	Osaka Pref.Univ. 1,Air Water Inc 2　*Oouchi Kzuhiro 1,Yokoyama Takashi 2,Kobayashi Sumio 2,Izumi Katsutoshi 1
		Break 15:15〜15:30
△	8	Catalyst Referred Etching of Silicon Carbide using Molybdenum Catalyst	Osaka University1, Kumamoto University2　Hideyuki Hara1, Ysuhisa. Sano1, Kenta Arima1, Keita Yagi1, Junji Murata1, Akihisa Kubota2, Hidekazu Mimura1, and Kazuto Yamauchi1
△	9	Anisotropic etching of single crystalline SiC by molten KOH for MEMS applications	Dept. of Electronic Science and Engineering, Kyoto Univ.　*Fukunaga Katsuhiko 1, Suda Jun 1, Kimoto Tsunenobu 1
	10	4H Silicon Carbide Surface Etched Using Chlorine Trifluoride Gas	Yokohama Nat. UNiv. 1, Kanto Denka 2, AIST 3　*Katsumi Yusuke 1, Habuka Hitoshi 1, Fukai Yasushi 2, Fukae Katsuya 2, Kato Tomohisa 3, Okumura Haime 3, Arai Kazuo 3
	11	Thermal etching of 4H-SiC by a mixed gas of chlorine and oxygen	NAIST　Tomoaki Hatayama, Susumu Takenami, Hiroshi Yano, Yukiharu Uraoka, Takashi Fuyuki
	12	High selective ratio dry etching of 4H-SiC using SiO2 mask	Fuji Electric Advanced Technology Co., Ltd 1.　*Kawada Yasuyuki 1,Nakamura Shunichi 1,Tamori Tae 1,Yonezawa Yoshiyuki 1
	13	Microstructure change and reaction products at Ni/SiC interface	Tohoku Univ. 1　○Terui Kenichiro 1,Yoshizaki Hiroshi 1,Yamazaki Yoshihiro 1,Koike Jyunichi 1
	14	Interfacial reaction between SiC power semiconductor and Ni or Ni/Ti contact materials	Tohoku Univ. 1　*Yoshizaki Hiroshi 1, Yamazaki Yoshihiro 1, Koike Junichi 1
	15	Evaluation of ohmic contact formed on N+ implanted 3C-SiC(100)	I.B.Tech.,Hosei Univ.　*Taguchi Etsushi,Suzuki yu, Nagata syohei, and Satoh Masataka
13.6 Group-IV Compounds
August 31 (Thu.) 9:30〜12:30
31a-ZG-　/ I
	1	Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
	2	Ion implantation in SiC(1)	IERIC 1　*Haruka Sasaki 1,Shinji Nagamachi 1,Seiichi Nomoto 1
	3	Decrease in Charge Collection Efficiency of 6H-SiC n+p Diodes Irradiated with Au Ions	Univ. of Electro-Communications 1, JAEA 2, Okayama Univ. 3, Inst. of Crystal Growth 4　*Iwamoto Naoya 1,2, Ohshima Takeshi 2, Sato Takahiro 2, Oikawa Shoichi 2, Onoda Shinobu 2, Hishiki Shigeomi 2, Hirao Toshio 2, Kamiya Tomihiro 2, Yokoyama Takuro 3, Sakamoto Airi 3, Tanaka Reizaburo 3, Nakano Itsuo 3, Gunter Wagner 4, Itoh Hisayoshi 2, Kawano Katsuyasu 1
	4	Study of SiC MIS structure using metal oxide/BCNO film	Osaka Univ. 1　*Kurimoto Hirofumi 1, Komatsu Naoyoshi 1, Kimura Chiharu 1, Aoki Hidemitsu 1, Sugino Takashi 1
	5	Characterization of insulating nitride films grown on SiC by direct nitridation method	Shinshu Univ.　*Yamaguchi Tetsuo 1,Ishida Yoshiki 1,Chen Chen 1,Hagihara Masataka 1,Yamakami Tomohiko 1,Hayashibe Rinpei 1,Abe Katsuya 1,Kamimura Kiichi 1
		Break 11:00〜11:15
	6	Fabrication of MOS Capacitors using 4H-SiC Preamorphized by Nitrogen Ion Implantation	Saitama Univ.1,CNR-IMM(Italy)2　Hijikata Yasuto1,Yaguchi Hiroyuki1,Yoshida Sadafumi1,Moscatelli Francesco2,Antonella Poggi2,Solmi Sandro2,Nipoti Roberta2
	7	Evaluation of Interface State on MOS Type Gas Sensor Prepared on 4H-SiC Epitaxial Layer with Catalytic Gate	Ishinomaki Senshu Univ.　*Shinji Nakagomi, Shun Suzuki, Takahiro Kikuchi, Yoshihiro Kokubun
	8	Characterization of SiO2/SiC interfaces using spectroscopic ellipsometer -Dependence on oxidation methods and surface orientation	Saitama Univ　*Hashimoto Hideki 1,Kuboki Ryoiti 1,Hijikata Yasuto 1,Yaguchi Hiroyuki 1,Yoshida Sadafumi 1
	9	Change in the electrical characteristics of p-channel 6H-SiC MOSFET by gamma-ray irradiation	JAEA 1, UEC 2　*Shigeomi Hishiki 1, Takeshi Ohshima 1, Naoya Iwamoto 2, Katsuyasu Kawano 2, H Itoh Hisayoshi 1
△	10	Characterization and Fabrication of 4H-SiC MOSFETs with Al2O3 films deposited by MOCVD.	Tokyo Tech. P&I Lab. 1,Mitsubishi Elec. Corp. 2　*Hino Shiro 1, Hatayama Tomohiro 1, Tokumitsu Eisuke 1, Miura Naruhisa 2, Oomori Tatsuo 2
13.7 Epitaxial Growth Fundamentals
August 29 (Tue.)
29a-ZF-　/ I
		Short Presentation (5min.) 9:30〜10:30 29a-ZF-1〜14　Poster Session 15:30〜17:30
	1	In-situ STM observation of InAs quantum dot MBE growth on Sb irradiated GaAs(001) surface	Univ. Tokyo, IIS, NCRC 1, Univ. Electro-commun. 2, Nippon Inst. Tech. 3　*Kakuda Naoki 1,2, Tsukamoto Shiro 1, Nagahara Seiji 1, Isomura Nobuhiro 1,3, Yamaguchi Koichi 2, Arakawa Yasuhiko 1
△	2	In-situ observation of facet formation during InAs/GaAs quantum dot growth	Kobe Univ. Sci.&Tech. 1,Kobe Univ. Fac. of Eng. 2　*Kudo Takuya 1,Sakamoto Mitsumasa 1,Mizuno Hiroshi 1,Shimizu Norihiko 1,Kita Takashi 1,2,Wada Osamu 1,2
	3	An empirical potential approach to the structural stability of InAs stacking-fault tetrahedron in InAs/GaAs(111)	Mie Univ. 1, NTT Corp. 2　*Hidenori Joe 1,Toru Akiyama 1, Kohji Nakamura 1, Kiyoshi Kanisawa 2, Tomonori Ito 1
△	4	Investigation of temperature dependency on GaAs (001) surface treated by As-free high temperature surface cleaning method	Univ.Tokyo,IIS,NCRC 1, NIT 2, Univ. Electro-commun. 3　*Isomura Nobuhiro 1,2, Tsukamoto Shirou 1, Nagahara Seiji 1, Kakuda Naoki 1,3, Iizuka Kanji 2, Arakawa Yasuhiko 1
	5	Lateral overgrowth of GaAs on SiO2 by MOVPE	Shizuoka Univ. 1　*Ozeki Tomohisa 1,Iwase Takayuki 1,Toda Syogo 1,Fuke Syunro 1,Takano Yasushi 1
	6	First-Principle Study on Growth of Ga and N layers on GaN substrate	Kyoto Univ. 1　*Doi Kentaro, Maida Noriaki, Kimura Kotaro, Tachibana Akitomo
▲	7	Numerical simulation studies on current controlled liquid phase epitaxial growth of GaSb	RIE, Shizuoka Univ. 1, Anna Univ. 2　　Mouleeswaran D 1,Dhanasekaran R 2, *Hayakawa Yasuhiro 1
	8	A simple approach to structural phase diagram for A8-NBN compounds from the viewpoint of the ionicity	Mie Univ. 1　*Ito Tomonori 1, Akiyama Toru 1, Nakamura Kohji 1
	9	Structural stability of silicon nanowires: a tight-binding calculation study	Mie Univ. 1　*Maeda Shogo 1, Akiyama Toru 1, Nakamura Kohji 1, Ito Tomonori 1
	10	Structure analysis of Ga nanoclusters formed on the Si(111)-(7x7) surface	NIMS 1　Akihiro Ohtake 1
13.8 Nano-impurities and defects
August 29 (Tue.) 9:30〜16:30
29a-ZG-　/ I
	1	Correlation between Metastable Defects Observed in Hydrogen-Implanted n-Type Silicon	Aichi Inst. of Technology 1　*Tokuda Yutaka 1, Yoshida Kazuhiro 1, Terashima Hiroshi 1
	2	Charge-state and isotope effects on the local motion of hydrogen around platinum in Si	Okayama Univ.　*Namula Bao 1, Kamiura Yoichi 1, Yamashita Yoshifumi 1, Ishiyama Takeshi 1
	3	Hydrogen penetration curve into Si substrate through strain-relaxed SiGe film	Okayama Univ. 1　*Yamashita Yoshifumi 1, Sakamoto Yoshifumi 1, Ishiyama Takeshi 1, Kamiura Yoichi 1
	4	The stress-induced splitting and shift of IR absorption lines due to platinum-hydrogen defects in Si observed by IR under stress	Okayama Univ. 1　*Sato Kimihiro 1, Kamiura Youichi 1, Yamashita Yoshihumi 1, Takeshi Ishiyama 1
	5	Annealing Behavior of Donor　Formed in H-doped or N-doped CZ-Si Crystals	Tohoku-Gakuin Univ.　Hara Akito
	6	Analysis of Defects in Si Wafers Using Highly Selective RIE -GOI Prediction-	Toyota Central R&D labs., Inc. 1, DENSO CORP. 2　*Nakashima Kenji 1,Yoshida Tomoyuki 1,Ohtsuki Hiroshi 2,Katada Mitsutaka 2
		Break 11:00〜11:15
△	7	Photoelastic Characterization of Residual Strain in Compound Semiconductor Wafer under Stress Application	Kyoto Inst. Tech. 1　*Kitamoto Takuya 1, Yamada Masayoshi 1
△	8	Quick Mapping of Carrier Concentration in Large-Diameter InP Substrate by Near-Infrared Transmittance	Kyoto Inst. Tech. 1 　*Inoue Yusuke 1, Yamada Masayoshi 1
	9	Stress and phonon confinement in thermally oxidized silicon nanowires synthesized by laser ablation	NIMS 1, Inst. of Appl. Phys., Univ. of Tsukuba 2, S.R.P. Nano Sci., Univ. of Tsukuba 3, IMR Tohoku Univ. 4　N. Fukata 1,2, N. Okada 1, T. Tsurui 4, S. Ito 4 and K. Murakami 2,3
	10	Electronic states and diffusion of Cu impurity in silicon	ISIR, Osaka Univ.　*Koun Shirai, Kazuto Matsukawa, Hiroshi Katayama-Yoshida
	11	Fe Schottky barrier and impurities diffusion at surface of Si	Shizuoka Inst of Science and Technology　Kazumasa Sakata 1,Sounosuke Aoki 1,Kunifumi Suzuki 1,Yutaka Yoshida 1
		Lunch 12:30〜13:30
29p-ZG-　/ I
	1	NMR measurement of boron implanted in semiconductor germanium.	Niigata Univ.1 2, Osaka Univ. 3, Fukui Univ. of Tech. 4　*Izumikawa Takuji 1, Shinojima Daisuke 2, Takahashi Shintaro 2, Mihara Mototsugu 3, Matsuta Kensaku 3, Fukuda Mitsunori 3, Ohtsubo Takashi 2, Ohya Susumu 2, Minamisono Tadanori 4
	2	Enhanced diffusion of boron and phosphorus in silicon by infrared laser irradiation	FUJITSU LABS. 1, Kyushu Univ. 2, Tohoku Univ. 3　*Tanahashi Katsuto 1, Kaneta Hiroshi 1, Kakimoto Koichi 2, Suto Shozo 3
	3	Dynamic analysis of the locking stress by oxygen for dislocations in CZ silicon crystals	Komatsu Electronic Metals Co. Technol. Dev.　*Kozo Nakamura, Junsuke Tomioka
	4	The proriety of BMD_DZ measurement in Anneared silicon wafer by preferential etching and laser scattering tomography	Toshiba Ceramics 1, Toyota Central R&D 2, 145 Comit. 3, Osaka Pref. Univ. 4　Ryuji Takeda 1,3, Kenji Nakashima 2,3, Kazuhiko Kashima 1,3, Hironori Banba 1, Noriko Ohmori 1, Naohisa Inoue 3,4
	5	Observation of charge states of vacancy in FZ silicon using ultrasonic measurements	Graduate School of Science and Technology, Niigata Univ. 1,Atsugi Laboratories, Fujitsu Ltd. 2, Research Institute for Applied Mechanics, Kyushu Univ. 3, Inst. for Materials Research, Tohoku Univ. 4　*Terutaka Goto 1, Hiroshi Yamada-Kaneta 2, Koji Sato 1, Yasuhiro Saito 1, Yuichi Nemoto 1, Masatoshi Hikin 1, Koichi Kakimoto 3, Shintaro Nakamura 4
	6	Vacancy concentration in defect-free-zone of CZ silicon observed by low-temperature ultrasonic measurement	Fujitsu Labs. Ltd. 1, Graduate School of Science, Niigata Univaersity 2, Reserch Instutute for Applied Mechanics, Kyushu University 3, Center for Low Temperature Science, Tohoku University 4　*Hiroshi Kaneta 1, Terutaka Gotou 2, Koji Satou 2, Yasuhiro Saitou 2, Yuichi Nemoto 2, Koichi Kakimoto 3, Shintarou Nakamura 4
		Break 15:00〜15:15
	7	Evaluation of Light Element Impurities in Ultrathin SOI Wafers by Luminescence Activation Using Electron Irradiation	ISAS/JAXA 1, Soken Univ. 2, JAEA 3　Nakagawa Satoko 1,2, Sone Yoshitsugu 1,2, Tajima Michio 1, Ohshima Takeshi 3, Itoh Hisayoshi 3
	8	Infrared absorption of low dosage irradiated low carbon concentration CZ-Si crystal	Osaka Oref. Univ.1, Toyota Motor Co.2, Toyota Central R&D Labs3　*Inoue Naohisa1, Yamazaki Shinya2, Goto Yasunori2, Kushida Tomoyoshi2, Sugiyama Takahide3
	9	Infrared absorption measurement of carbon concentration in SiGe crystal	Osaka Oref. Univ.1, Univ. Athens2, Kumamoto N College Technol.3　* Inoue Naohisa1, Londos Charalambos2, Andrianakis A2, Ohyama Hidenori3
	10	Relation between helium-irradiation induced defects and carbon in n-type silicon	Toyota Central R&D Labs., Inc. 1, Toyota Motor Co. 2　*Sugiyama Takahide 1, Yamazaki Shinya 2, Goto Yasunori 2, Kushida Tomoyoshi 2, Ishiko Masayasu 1
	11	Carbon-oxygen complex in He irradiated silicon	Toyota Motor Co. 1,Toyota Central R&D Labs. 2　*Yamazaki Shinya 1,Goto Yasunori 1,Kushida Tomoyoshi 1,Sugiyama Takahide 2