| 12 Semiconductors B (Exploratory Materials
/ Physics / Devices |
| 12.1
Exploratory Materials Physics |
| August 31 (Thu.) 10:00〜17:30 |
| 31a-RD- / III |
| ▲△ |
1 |
Theoretical Study on Dielectric Breakdown of Metal
Oxide by Molecular Dynamics and Tight-Binding Quantum Chemistry Methods
|
Dept. Appl. Chem., Tohoku Univ.1 ,JST-PRESTO 2,
NICHe Tohoku Univ.3 Zhu Zhigang1, Chutia Arunabhiram1, Hideyuki Tsuboi 1,
Michihisa Koyama 1,
Akira Endou 1, Hiromitsu Takaba 1,Momoji Kubo 1, 2, Carlos A. Del Carpio
1,
Akira Miyamoto 1, 3
|
| |
2 |
Effect of Hydrogen Storage in Nano-Porous Silicon
(I) |
Tokyo Denki Univ. 1 *Masaya Kato 1, Hikaru Mori
1, Mituya Motohashi 1, Kazuaki Homma 1 |
| |
3 |
Effect of Hydrogen Storage in Nano-Porous Silicon(II) |
Tokyo Denki Univ. *Mori Hikaru 1,Kato Masaya 1,Motohashi
Mituya 1,Homma Kazuaki 1 |
| ▲ |
4 |
Efficient deep energy level resonance energy transfer
using biotin-PEG/polyamine stabilized CdS quantum dots |
Konan Univ.QNL.1, Konan Univ.Dept of Phys.2, Tsukuba
Univ.TIMS.3 *Wei Lu 1, Yusuke Tokuhiro 2, Ikurou Umezu 1.2, Akira Sugimura
1.2, Yukio Nagasaki 3 |
| △ |
5 |
Transport propertye of nanographite patterned on
Silicon dioxide |
Hokkaido Univ. *Keita Konishi, Shingo Satoh, Takashi
Matsuda, Kanji Yoh |
| |
|
Break 11:15〜11:30 |
|
| |
6 |
Transport properties of ultra-thin graphite films |
RIKEN 1, Tokyo Inst. of Tech. 2, Univ. of Tsukuba
3 Miyazaki Hisao 1, Odaka Shunsuke 1,2, Moriki Takuya 3, Sato Takashi 3,
Kanda Akinobu 3, Tsukagoshi Kazuhito 1, Ootuka Youiti 3, Aoyagi Yoshinobu
1,2 |
| |
7 |
Tunnel magneto resistance effect in GdAs/GaAs/GdAs
junctions |
Nagoya Univ. 1 *Honda Syuta 1, Itoh Hiroyoshi 1,
Inoue Jun-ichiro 1 |
| △ |
8 |
Fabrication of 30Si-enriched Thin Film
for Local Neutron Transmutation Doping |
JAEA 1, WERC 2, Ibaraki Univ. 3 *Yoichi Yamada
1, Hiroyuki Yamamoto 1, Hironori Ohba 1, Masato Sasase 2, Fumitaka Esaka
1, Kenji Yamaguchi 1, Haruhiko Udono 3, Shin-ichi Shamoto 1, Atsushi Yokoyama
1, Kiichi Hojou 1 |
| |
9 |
Silicon isotope enrichment by two-color laser irradiation
of Si2F6 |
JAEA 1 *Hironori Ohba 1,Hiroshi Akagi 1, Atsushi
Yokoyama 1, Yoichi Yamada 1, Hiroyuki Yamamoto 1 |
| |
10 |
Solution growth of ß-FeSi2 single
crystal using a high purity FeSi2 source (II) |
Ibaraki Univ. 1, Japan Atomic Energy Agency 2,
IMRAM.Tohoku Univ. 3 *Gotoh Kouhei 1, Udono Haruhiko 1, Kikuma Isao 1, Esaka
Fumitaka 2, Uchikoshi Masahito 3, Isshiki Minoru 3 |
| |
11 |
Growth conditions of beta-FeSi2 by chemical vapor
transport |
Tuhoku Univ. *J.F. Wang, S. Saitou, J.S. Ji, M.
Isshiki |
| |
|
Lunch 13:00〜14:00 |
|
| 31p-RD- / III |
| |
1 |
Group-IV-based Spintronics Devices and Reconfigurable
Logic Applications |
Dept of Electronic Eng., Univ. of Tokyo 1, SORST
JST 2, Dept of Frontier Informatics, Univ. of Tokyo 3, Imaging Sci.& Tech.
Lab, Tokyo Inst. Tech. 4 *Masaaki Tanaka 1,2, Ryosho Nakane 1,2, Kuniaki
Sugiura 1, Yusuke Shuto 1, Shinsuke Yada 1, Satoshi Sugahara 3,4 |
| |
2 |
Submicron patterning of Fe system silicides using
Si etching gases:Toward fabrication of photonic crystals |
Kyoto University 1,Kanagawa ITRI 2,Osaka University
3 Imai Akifumi 1, Kunimatsu Shunsuke 1, Maeda Yoshihito 1, Akiyama Kensuke
2,Terai Yoshikazu 3 |
| |
3 |
Effect of size fluctuation on band-gap properties
of β-FeSi2 photonic crystals |
Kyoto Univ. 1 *Kunimatsu Shunsuke 1, Imai Akifumi
1, Ando Yu-ichiro 1, Maeda Yoshihito 1 |
| |
4 |
Photoluminescence spectra of β–FeSi2
layers using various kinds of iron sources |
Osaka Univ. 1, Kanazawa Inst. Tech. 2 *Yoshikazu
Terai 1, Syoutaro Hashimoto 1, Yasufumi Fujiwara 1, Toshitsugu Minami 2,
Toshihiro Miyata 2, Makoto Ishii 2 |
| △ |
5 |
Photoluminescence analysis of Kankyo semiconductor
b-FeSi2 |
ISAS/JAXA 1,Tokyo Univ. 2,Kankyo Semiconductors
Co., Ltd. 3,Tateyama Kagaku Group, Tsukuba Lab. 4 *Kino Hiroki 1,2,Tajima
Michio 1,2,Fukuzawa Yasuhiro 3,Osamura Masato 3,Liu Zhengxin 4,Ootsuka Teruhisa
4,Makita Yunosuke 3,4 |
| |
|
Break 15:30〜15:45 |
|
| |
6 |
MBE growth and luminescence characterization of
multiple Si/β-FeSi2 film/Si(001) structures |
Inst.of Appl.Phys.,Univ. Tsukuba1 *Murase Shigemitsu1,Ugajin
Yuta1,Suemasu Takashi1 |
| |
7 |
Growth and luminescence characterization of Si/β-FeSi2/Si
(111) double-heterostructures by MBE with high-purity Fe. |
Inst. of Appl. Phys. Univ. of Tsukuba 1 *Ugajin
Yuta 1, Suemasu Takashi 1 |
| |
8 |
Ion beam synthesis of β-FeSi2: surface
segregation of Fe atoms |
Kyoto University 1,JAEA 2,Osaka University 3 Ando
Yu-ichiro 1,Jonishi Takafumi 1, Maeda Yoshihito 1,2, Narumi Kazumasa 2,Terai
Yoshikazu 3 |
| |
9 |
Ion beam synthesis of β-FeSi2: Dependence
of Si vacancy on annealing time |
Kyoto Univ. 1 *Jonishi Takafumi 1, Ando Yu-ichiro
1, Saiki Toshihide 1, Maeda Yoshihito 1 |
| |
10 |
A study of β-FeSi2 formation rate an
iron evaporation method on silicon(001) substrates
|
O.E.Device System R&D Center,Kanazawa Inst.Tech. Ishii
Makoto 1,Miyata Toshihiro 1,Minami Tadatugu 1
|
| |
11 |
Growth of β-FeSi2 thin films on single
crystalline β-FeSi2 substrate(II) |
Ibaraki Univ. 1 *Muroga Masataka 1,Ohuchi Shinji
1,Suzuki Hirokazu 1,Udono Haruhiko 1,Kikuma Isao 1 |
| |
12 |
Nano-structural changes of iron disilicide (FeSi2)
thin films by high energy heavy ion irradiation |
The Wakasa-wan Energy Research Center1
Japan Atomic Energy Agency2 *Sasase Masato1, Okayasu Satoru2, Yamamoto Hiroyuki2,
Yamaguchi Kenji2, Shamoto Shinichi2, Hojou Kiichi2 |
| 12.1 Exploratory
Materials Physics |
| September 1 (Fri.) 9:00〜11:30 |
| 1a-RD- / III |
| |
1 |
Growth and characterization of group-III impurity-doped
BaSi2 films on Si substrates grown by molecular beam epitaxy |
Inst. of Appl. Phys., Univ. of Tsukuba 1,Inst.
of Appl. Phys., Univ. of Tsukuba 2, Inst. of Appl. Phys., Univ. of Tsukuba
3 *Kobayashi Michitaka 1, Morita Kosuke 2, Suemasu Takashi 3 |
| |
2 |
MBE growth of Cu-doped BaSi2 thin films on Si(111)
substrates. |
Inst.of Appl.Phys.,Univ.of Tsukuba *Ichikawa Yoshitake
1,Morita Kousuke 1,Suemasu Takashi 1 |
| |
3 |
MBE growth of BaSi2 and characterization
of its electrical properties. |
Inst. of Appl. Phys., Univ. of Tsukuba 1 Morita
Kousuke 1,Kobayashi Michitaka 1,Ichikawa Yoshitake 1,Saida Morihiko 1,Sasaki
Masahiro 1,Suemasu Takashi 1 |
| |
4 |
Melt growth and characterization of Mg2Ge
crystals |
Ibaraki Univ. 1 *Tamura Daiki 1,Sugimoto Kazuhiro
1,Udono Haruhiko 1,Kikuma Isao 1 |
| |
5 |
First-principles studies of n-type carriers in
Mg2Si |
FDK Corp. 1, Toyohashi Univ. of Tech. 2 *Kato Akihiko
1, Yagi Takeshi 1, Hakamata Kazuyoshi 1, Masuda Tetsuya 2, Todaka Yoshikazu
2, Umemoto Minoru 2 |
| |
|
Break 10:15〜10:30 |
|
| |
6 |
Structure analysis of self-assembled ErSi2
nanowires formed on Si substrates (III)
|
Tokyo Univ. of Science. 1, Riken. 2 *Watanabe Ryouki
1,Katayama Yusuke 1,Yokoyama Satoshi 1, Kobayashi Tomohiro 2,Meguro Takashi
2,Xinwei Zhao 1 |
| △ |
7 |
Magnetic properties of β-FeSi2 thin-film
system SPE-grown on Si(111) surface |
NAIST 1 *Hattori Azusa 1, Hattori Ken 1, Kodama
Kenji 1, Hosoito Nobuyosi 1, Daimon Hiroshi 1 |
| |
8 |
Effect of Lattice Mismatch on Epitaxial Growth
and Magnetic Properties of Fe3Si Thin Films |
Kanagawa Ind.Tech.Cent. 1, Tokyo Polytechnic Univ.
2, Tokyo Inst.Tech. 3 *Akiyama Kensuke 1, Kyoduka Azusa 2, Kaneko Satoru
1, Hirabayashi Yasuo 1, Sawada Yutaka 2, Funakubo Hiroshi 3 |
| |
9 |
Formation of ferromagnetic Fe3Si with
atomically smooth surface on CaF2/Si(111) |
Inst. of Appl. Phys.,Univ. of Tsukuba 1, Dep. Appl.
Sci. for Electronics and Materials Kyushu Univ. 2,NRI-AIST 3 Kobayashi Kenichi
1,Suemasu Takashi 1,Kuwano Noriyuki 2,Akinaga Hiroyuki 3 |
| 12.2
Heterostructures and Quantum Nanostructures |
| August 30 (Wed.) 14:00〜18:30 |
| 30p-RE- / III |
| |
1 |
Numerical Simulations of Electron Wave Diffraction
Taking Spatial Variation of Effective Mass and Band Nonparabolicity into
Consideration |
Tokyo Tech. 1, QNERC 2, CREST-JST 3 *Nishimura
So 1, Machida Nobuya 1,3, Furuya Kazuhito 1,2,3 |
| |
2 |
Photoelectrons-Excited Terahertz Plasmon Resonance
in a Heterostructure Transistor with Double-Grating Gates |
Tohoku Univ. 1, Hokkaido Univ. 2 *Kaneko Shinya
1, Hanabe Mitsuhiro 1, Yahya Moubarak Meziani 1, Otsuji Taiichi 1, Sano
Eiichi 2 |
| |
3 |
Fabrication and characterization of Sb-based diode
structures for detecting subteraherz wave |
Nanomaterials Microdevices Research Center,Osaka
Inst. of Tech. Takahashi Hiroshi 1, Inoue Tatsuya 1, Maemoto Toshihiko 1,
Sasa Shigehiko 1, Inoue Masataka 1 |
| |
4 |
Hopping conduction in hydrogen-passivated silicon
nanochains prepared by pulsed laser ablation |
Dept.of Physics. Konan Univ.1, Kansai Univ.2, Karc,
NICT3,
Quantum Nano Tech.Lab.4, *H. Yamamoto1,M. Inada2, R. Ueda3,I. Umezu1,4,
S. Tanaka3, T. Saitoh2,
A. Sugimura1,4
|
| |
5 |
Negative differential resistance characteristics
of InGaAs dual channel transistors |
AIST 1,CREST-JST 2,Shibaura Inst. of Tech. 3 *Hori
Soichiro 1,3,Sugaya Takeyoshi 1,2,Komori Kazuhiro 1,2,Yonei Kenji 3,Muguruma
Hitoshi 3 |
| |
6 |
GaP nanowires and nano heterostructures on Si(111) |
NTT Basic Research Labs. 1 *Tateno Kouta 1, Sanada
Haruki 1, Hibino Hiroki 1, Gotoh Hideki 1, Nakano Hidetoshi 1 |
| |
7 |
Charge Carrier Transport in Polymer Film with CdSe
Colloidal Nano Dots III |
Wakayama Univ. 1, Toyota Tech. Inst. 2 Shintomi
T. 1, Yamamoto N. 1, Kida H. 1, Tanaka I. 1, Kamiya I. 2 |
| ▲ |
8 |
Intersubband absorptions in EuTe/PbTe double-well
superlattices at normal incidence |
Graduate School of Electronic Sci. & Technol. Shizuoka
Univ. 1,
Faculty of Engineering, Shizuoka Univ. 2 Veis Martin 1, Inoue Yoku 2, Ishida
Akihiro 1,2 |
| |
9 |
An Electronic Structure Study of Multiple Quantum
Rings |
RIES, Hokkaido Univ. 1 *Yamagata Yoshitaka 1, Kondo
Kenji 1 |
| |
|
Break 16:15〜16:30 |
|
| |
10 |
Enhancement effect of near infrared emission by
2-dimensional photonic crystals
|
RIES, Hokkaido Univ. 1, JST CREST 2 Yujiro Hayashi
1,2, Michiaki Endo 1, Hajime Kobayashi 1, Masafumi Jo 1, Hidekazu Kumano
1, Ikuo Suemune 1,2 |
| |
11 |
Growth characteristic of SrxCd1-xF2
alloy on Si substrate and application to resonant tunneling diodes |
Tokyo Tech. 1,Kochi Univ. of Tech. 2 *Hamajima
Hidetaka 1,Watanabe So 1,Maeda Motoki 2,Tsutsui Kazuo 1 |
| |
12 |
Investigation of Asymmetric Fluoride Resonant Tunneling
Diodes Using CaxCd1-xF2 Barrier Layer |
Tokyo Tech. 1, Kochi Univ. Tech. 2 *Watanabe So
1, Miura Kei 1, Saito Norihiro 1, Maeda Motoki 2, Tsutsui Kazuo 1 |
| |
13 |
Study of post thermal ovidation of CaF2 buffer
layers for vertically integrated fluoride resonant tunneling devices |
Tokyo Tech 1 ,Kouchi Univ Tech 2 *Norihiro Saitou
1 ,Motoki Maeda 2 ,So Watanabe 1 ,Kazuo Tsutsui 1 |
| |
14 |
I-V characteristics of CdF2/CaF2
resonant tunneling diode on Si(100) substrate by nano-area local growth
method |
Tokyotech 1, SORST-JST 2, CREST-JST 3 Kanazawa
Tohru 1, Fujii Ryo 1, Wada Takafumi 1, Suzuki Yusuke 1, Watanabe Masahiro
1,2, Asada Masahiro 1,3 |
| |
15 |
Atomic Step Control of Si Substrate Surface for
Flouride Based Intersubband Transition Lasers. |
Tokyo Inst. of Tech. 1,SORST 2,CREST-JST 3 Shinji
Kodaira 1,Keisuke Jinen 1,Kaoru Uchida 1,Masaya Kumei 1,Hiroshi Sano 1,Masahiro
Watanabe 1,2,Masahiro Asada 1,3 |
| |
16 |
Fabrication of Plasmon Waveguide with SOI structure
for Fluoride-Based Intersubband Transition Lasers |
Tokyo Inst. of Tech. 1,SORST-JST 2,CREST-JST 3, *Uchida
Kaoru 1,Jinen Keisuke 1,Kodaira Shinji 1,Kumei Masaya 1,Sano Hiroshi 1,Watanabe
Masahiro 1,2,Asada Masahiro 1,3, |
| |
17 |
Theoretical Analysis of Intersubband Transition
Time in (CdF2/CaF2) Quantum Well Structure |
Tokyo Inst. Tech. 1, SORST-JST 2, CREST-JST 3 *Jinen
Keisuke 1, Uchida Kaoru 1, Kodaira Shinji 1, Kumei Masaya 1, Sano Hiroshi
1, Masahiro Watanabe 1 2, Asada Masahiro 1 3 |
| 12.2
Heterostructures and Quantum Nanostructures |
| August 31 (Thu.) 10:00〜18:45 |
| 31a-RE- / III |
| ▲ |
1 |
Photoluminescence Properties in GaInAsP/InP Single
Line Quantum-Wire Structure |
Titech QNERC 1, JST-CREST 2, ISSP Univ. Tokyo 3 *Dhanorm
Plumwongrot 1, Hirotake Itoh 2 3, Yosuke Tamura 1, Yoshifumi Nishimoto 1,
Takeo Maruyama 1 2, Hidefumi Akiyama 2 3, Shigehisa Arai 1 2 |
| △ |
2 |
Electrical characterization of InGaAs nanowire
grown by selective area MOVPE |
Hokkaido Univ. 1 Noborisaka Jinichiro 1, Sato Takuya
1, Motohisa Junichi 1, Hara Shinjiro 1, Fukui Takashi 1 |
| △ |
3 |
Electron transport properties in InAs/AlGaSb ballistic
rectifiers (II) |
Nanomaterials Microdevices Research Center, Osaka
Inst. of Tech. 1 Masatoshi Koyama 1, Hiroshi Takahashi 1, Tatsuya Inoue
1, Atsushi Nakashima 1, Toshihiko Maemoto 1, Shigehiko Sasa 1, Masataka
Inoue 1 |
| △ |
4 |
Control of energy levels of quantum dots using
InGaAs gradient composition strain-reducing layer |
AIST 1, CREST-JST 2
*Takeru Amano 1, Shohgo Yamauchi 2, Takeyoshi Sugaya 1, Kazuhiro Komori
1 2 |
| △ |
5 |
In-plane anisotropy in stacked InAs quantum dots
on an InP(311)B substrate |
Sophia Univ. 1,National Inst. of Information and
Communications Technology (NICT) 2 *Kujiraoka Mamiko 1,2,Hayase-Ishi Junko
2,Akahane Kouichi 2,Yamamoto Naokatsu 2,Ema Kazuhiro 1,Sasaki Masahide 2 |
| △ |
6 |
Fabrication of self-organized metal nanodots by
anodization and their application to a SET operating at a room temperature |
Laboratory Nanoelectronics and Spintronics, RIEC,
Tohoku Univ. 1, JST-CREST. 2 *Kazumasa Ito 1, Ryotaro Ymaguchi 1, Kenichi
Ishibashi 1, Yasuo Kimura 1,2, Michio Niwano 1,2, Kingo Itaya 2 |
| |
|
Break 11:30〜11:45 |
|
| △ |
7 |
Coulomb blockade effects in a self-assembled GaN
quantum dot |
IIS, Univ. of Tokyo 1, Facul. of Eng., Yamaguchi
Univ. 2, RIKEN 3, Dept. of Appl. Phys., Univ. of Tokyo 4 *Nakaoka Toshihiro
1, Kako Satoshi 1, Hoshino Katsuyuki 2, Ono Keiji 3, Tarucha Seigo 4, Arakawa
Yasuhiko 1 |
| △ |
8 |
Spin splitting of neutral exciton emission from
a single quantum dot |
RIES 1, Hokkaido Univ. 2, JST CREST 3 *Hajime Kobayashi
1, Hidekazu Kumano 1, Mitiaki Endo 1, Ikuo Suemune 1,3,
Hirotaka Sasakura 3, Satoru Adachi 2,3, Syuniti Muto 2,3 |
| ▲△ |
9 |
Temperature dependence of electron tunneling in
GaAs/AlGaAs asymmetric coupled quantum wells |
Waseda Univ. 1 *Lu Shulong 1, Ushiyama Takafumi
1, Fujita Taisuke 1, Kusunoki Kouji 1, Tackeuchi Atsushi 1 |
| △ |
10 |
Vertical carrier capture and electroluminescence
efficiency in InGaN multiple-quantum-well diodes |
Kyushu Inst. 1 *Inada Takayuki 1, Satake Akihiro
1, Fujiwara Kenzo 1 |
| △ |
11 |
Electrical transport propertys of ultra thin carbon
layers grown on SiC |
RCIQE Hokkaido Univ.1, RIES Hokkaido Univ.2 *Takashi
Matsuda1,Keita Konishi1,Yasuhiro Satoh2,Satoru Tanaka2,Kanji Yoh1 |
| |
|
Lunch 13:00〜14:00 |
|
| 31p-RE- / III |
| |
1 |
|
|
| |
2 |
Improvement of wave function symmetry in InAs quantum
dot using InGaAs cap |
Yokohama Nat'l Univ.1 *Nakashima Kennnta 1.Mukai
Kouki |
| |
3 |
Direct extraction method of vector dipole moments
of bound exciton complexes from Stark shift surfaces |
IIS Univ. of Tokyo 1 Kondo Naoki 1, Ohmori Masato
1, Sakaki Hiroyuki 1 |
| |
4 |
Thermally activated carrier transfer among CdTe/ZnTe
self-organized quantum dots |
Waseda univ. 1, Hangyang Univ. 2, Yonsei Univ.
3 *Kusunoki Koji 1, Miyata Shogo 1, Sugawa Seiji 1, Tackeuchi Atsushi 1,
T. W. Kim 2, J. H. Kim 2, H. S. Lee 3, H. L. Park 3 |
| |
5 |
Fabrication of InAs quantum dot memory by selective
area MOVPE (3) |
Hokkaido Univ RCIQE. 1 *Ooike Noboru 1, Motohisa
Junichi 1, Fukui Takashi 1 |
| |
6 |
STIRAP for the photon-assisted tunneling in a InAlAs
double quantum dot |
Hokkaido Univ. 1, JST CREST 2, *Shinji Abe 1, Hirotaka
Sasakura 2, Satoru Adachi 1,2, Shunichi Muto 1,2 |
| |
7 |
Optical manipulation of the exciton and nuclear
spins in a single InAlAs QD |
Hokkaido Univ. 1, JST CREST 2 *Sasakura Hirotaka
2, Adachi Satoru 1,2, Muto Shunichi 1,2 |
| |
8 |
Effects of exciton fine structure on nuclear spin
polarization in a single self-assembled InAlAs quantum dot |
Hokkaido Univ. 1, RIES 2, JST CREST 3 *Kaji Reina
1, Mukumoto Takashi 1, Sasakura Hirotaka 3, Adachi Satoru 1,3, Muto Shunichi
1,3, Kumano Hidekazu 2,3, Suemune Ikuo 2,3 |
| |
|
Break 16:15〜16:30 |
|
| |
9 |
Measurement of PLE spectra of single quantum dots
using imaging spectroscopy |
Keio Univ. 1 *Kumano Kenta 1,Maeda Hironobu 1,Takamizawa
Akifumi 1,Saiki Toshiharu 1 |
| |
10 |
Dimensionality Control in Dynamically-Modulated
GaAs Quantum Wells by Surface Acoustic Waves |
NTT Basic Research Labs. 1, NTT-AT 2, Paul Drude
Inst. 3 *Sogawa Tetsuomi 1, Gotoh Hideki 1, Hirayama Yoshiro 1, Saku Tadashi
1, Miyashita Sen 2, Santos Paulo 3, Ploog Klaus 3 |
| |
11 |
Photoluminescence lifetime measurements in InAs
quantum disks with thickness of several atomic layers |
Univ. of Tsukuba 1, NIMS 2, Fujitsu Lab. Ltd. 3 Shinichi
Tomimoto 1, Atsushi Kurokawa 1, Yoshiki Sakuma 2, Tatsuya Usuki 3, Yasuaki
Masumoto 1 |
| |
12 |
Dependence of dephasing on interdot spacer thickness
in stacked InAs quantum dots |
National Inst. of Information and Communications
Technology (NICT) 1,
Sophia Univ. 2 Ishi-Hayase Juko 1, Akahane Kouichi 1, Yamamoto Naokatsu
1,
Kujiraoka Mamiko 1,2, Ema Kazuhiro 2, Sasaki Masahide 1 |
| |
13 |
On Demand Single Photon Emission at 1.3 micrometer
from Individual InAs Quantum Dots |
NTT Basic Res. Labs. 1, NTT Photonics Labs. 2
Cade Nicholas 1, *Hideki Gotoh 1, Kamada Hidehiko 1, Tawara Takehiko 1,
Okamoto Hiroshi 2, Nakano Hidetoshi 1
|
| |
14 |
Slowlight in Dot-in-Well type InAs Quantum dots
in the 1.3 micrometer region at room temperature |
NTT Basic Res. Labs. 1, University of Illinois
2, NTT Photonics Labs. 3 *Gotoh Hideki 1,2, Chang Shu-Wei 2, Chuang Shun-Lien
2, Okamoto Hiroshi 3, Shibata Yasuo 3 |
| |
15 |
Control of Coupling between Excitons in Bi-layer
Quantum Dots |
NTT-BRL 1, Konan Univ. 2, Shizuoka Univ. 3 *Sanada
Haruki 1, Gotoh Hideki 1, Kamada Hidehiko 1, Nakano Hidetoshi 1, Ando Hiroaki
2, Temmyo Jiro 3 |
| |
16 |
Resonant photoluminescence spectra of high density
InAs quantum dot ensembles |
IIS Univ. Tokyo 1 *Torii Kousuke 1, Ohmori Masato
1, Sakaki Hiroyuki 1 |
| |
17 |
Spatially-resolved cathodoluminescence spectroscopy
of InAlAs quantum dots |
Graduate School of Engnieering, Nagoya Univ. *Nishiwaki
Tatsuya 1, Yamaguchi Masahito 1, Sawaki Nobuhiko 1 |
| 12.2 Heterostructures
and Quantum Nanostructures |
| September 1 (Fri.) 9:00〜15:00 |
| 1a-RE- / III |
| |
1 |
Relaxation Processes of Exciton in InP/InAs/InP
Core-Multishell Nanowires |
PAS Tsukuba Univ. 1,RCIQE Hokkaido Univ. 2 Ken
Goto 1,Bipul Pal 1,Yasuaki Masumoto 1,Premila Mohan 2,Junichi Motohisa 2,Takashi
Fukui 2 |
| ▲ |
2 |
Photoluminescence and Raman spectroscopy investigations
of doped InP nanowires |
Hokkaido Univ. 1 Ding Ying 1, Motohisa Junichi
1, Fukui Takashi 1 |
| |
3 |
Low-temperature STM observation of 2DEG in InGaAs/InAlAs
surface QW grown on GaAs(111)A substrate |
NTT Basic Research lab. 1, LPN-CNRS 2, SORST-JST
3 *Kanisawa Kiyoshi 1, Perraud Simon 1,2, Hirayama Yoshiro 1,3 |
| |
4 |
Growth of GaCrN/AlN quantum well structure -Growth
of flat AlN structure |
ISIR Osaka Univ. 1 Yamauchi Yoshiaki 1,Funakoshi
Masayuki 1,Hasegawa Shigehiko 1,Asahi Hajime 1 |
| ▲ |
5 |
Observation of shallow impurity states in semiconductor
quantum well structures by low-temperature scanning tunneling spectroscopy |
NTT Basic Research Labs 1, LPN-CNRS 2, SORST-JST
3 *Perraud Simon 1,2, Kanisawa Kiyoshi 1, Wang Zhao-Zhong 2, Hirayama Yoshiro
1,3 |
| |
|
Break 10:15〜10:30 |
|
| |
6 |
Optical anisotropy of InGaAs/InAlAs (110) quantum
well studied by modulation spectroscopy |
Kyoto Inst. Tech. 1, NTT Photonics Lab. 2 *Yamashita
Kenichi 1, Asai Hiromitsu 2, Oe Kunishige 1 |
| |
7 |
Electron g-factor in GaAs and InGaAs Quantum well
structure (I) |
Quantum Nano-Tech. Lab. 1, Faculty of Sci. and
Eng., Konan Univ. 2, NTT Basic Research Labs. 3 *Tetsu Ito 1, Wataru Shichi
1,2, Shinsuke Morisada 2, Masao Ichida1,2, Hideki Gotoh 3, Hidehiko Kamada
3, Hiroaki Ando 1,2 |
| |
8 |
Electron g-factor in GaAs and InGaAs Quantum well
structure (II) |
Konan Univ. 1, Quantum Nano-tech. Lab. 2, NTT Basic
Research Labs. * = Shichi Wataru 1,2, Ito Testu 2, Morisada Shinsuke 1,
Ichida Masao 1,2, Gotoh Hideki 3, Kamada Hidehiko 3, Ando Hiroaki 1,2 |
| |
9 |
Transmission intensity modulation of a GaAs/AlAs
superlattice using bias illumination |
Kyushu Inst. of Tech. 1 *K. Kawashima 1, Y. Matsuzaki
1, S. Hisano 1, S. Yoshinaga 1 |
| |
10 |
Photoreflelctance investigation of InGaAs/AlAsSb
quantum wells |
AIST 1, Central Res. Lab., Hitachi Ltd. 2 Mozume
Teruo1,Kasai Jun-ichi2,Nagase Masanori1,Simoyama Takasi1,Ishikawa Hiroshi1 |
| |
11 |
Applied voltage dependence of photoluminescence
intensity in InGaN SQW LEDs ―influence of excitation wavelength― |
Kyushu Inst. of Tech. 1 *Satake Akihiro 1, Soejima
Kenichi 1 , Aizawa Hideyuki 1, Fujiwara Kenzo 1 |
| |
|
Lunch 12:00〜13:00 |
|
| 1p-RE- / III |
| |
1 |
Electric field domain formation in a multiple finite-superlattice
system |
Osaka City Univ. 1, Doshisya Univ. 2 *Hosoda Makoto
1, Noma Seiji 1, Ohtani Naoki 2 |
| |
2 |
Kondo effect in a single self-assembled InAs quantum
dots probed by nanogap electrodes |
Institute of Industrial Science, Univ. of Tokyo *Shibata
Kenji 1, Jung Minkyung 1, Machida Tomoki 1, Hirakawa Kazuhiko 1 |
| |
3 |
g-factor of two dimensional electrons in a hetero
junction with embedded InGaAs dots |
IIS, Tokyo Univ. *Kawazu Takuya 1, Sakaki Hiroyuki
1 |
| |
4 |
Photo-pumped lasing from ring-shaped GaAs quantum
dot grown by droplet epitaxy |
NIMS 1 Mano Takaaki 1, Kuroda Takashi 1, Yamagiwa
Masakazu 1, Sakoda Kazuaki 1 Koguchi Nobuyuki 1 |
| |
5 |
Fabrication and characterization of GaAs/AlGaAs
Quantum Cascade Lasers |
RCAST 1, IIS 2, Univ. of Tokyo *Wakayama Yuki 1,
Kakuma Hideo 2, Kumagai Naoto 2, Iwamoto Satoshi 1,2, Arakawa Yasuhiko 1,2 |
| |
6 |
Temperature dependence of photoluminescence property
of GaAs/(GaAs)4(AlAs)2 quantum wires grown on (775)B
GaAs substrates by MBE |
Osaka Univ. 1, Tokushima Univ. 2, Ehime Univ. 3,
Nara National College of Technology 4 *Osaki Shinji 1, Higuchi Yu 1, Kitada
Takahiro 2, Shimomura Satoshi 3, Hiyamizu Satoshi 4 |
| |
7 |
Gain spectra of self-organized GaAs/(GaAs)4(AlAs)2
QWR laser grown on (775)B GaAs substrate by MBE. |
Graduate School of Eng. Sci., Osaka Univ. 1,Graduate
School of Eng., Tokushima Univ. 2,Graduate School of Sci. and Eng., Ehime
Univ. 3,Nara National College of Technology 4 *Fujita Takeya 1,Ohmori Kazuyuki
1,Kitada Takahiro 2,Shimomura Satoshi 3,Hiyamizu Satoshi4 |
| |
8 |
Photocurrent measurements of InAs/AlSb quantum
cascade laser structures |
RIEC Tohoku Univ 1, AsahiKASEI EMD 2, JST-PRESTO
3 *Hidekazu Ohnishi 1, Keita Ohtani 1,3, Yoshitaka Moriyasu 1,2, Hideo Ohno
1 |
| 12.3
Process Technologies and Interface Physics |
| August 29 (Tue.) 11:00〜17:30 |
| 29a-RD- / III |
| |
1 |
Fabrication of patterned GaInAs/GaAs hetero-structures
using amorphous arsenic mask |
Graduate School of Engineering, Nagoya Univ. 1,
VBL, Nagoya Univ. 2 *Noritake Yosuke 1, Yamada Takumi 1, Tabuchi Masao 2,
Takeda Yoshikazu 1 |
| △ |
2 |
Formation of Ultla -Thin Nitrided layer on GaAs
surfase by using RF-MBE and effects of As supply |
Dept. of Materials Science & Engineering, Meijo
Univ.1, 21th Century COE “NANO FACTORY” Meijo Univ.2 Midori Mori 1,Yo Yamamoto
2,Souta Matsuoka 1,Shigeya Naritsuka 1.2,Tkahiro Maruyama1.2 |
| |
3 |
Diffusion mechanism of nickel of NiP thin film
on GaAs substrate |
Mitsubishi Electric Corp. High Frequency & Optical
Semiconductor Works 1,
Mitsubishi Electric Corp. Advanced Technology R&D Center 2 *Nishizawa Koichiro
1, Nakagawa Yasuyuki 2, Kitano Toshiaki 1, Matsuoka Hiroshi 1 |
| |
4 |
STM Analysis of GaInP/GaAs interfaces by cross-sectional
UHV-STM |
The University of Electro-Communications 1 *Otsuka
Fumiyuki 1, Watanabe Akihiro 1, Nozaki Shinji 1, Uchida Kazuo 1, Ono Hiroshi
1 |
| △ |
5 |
Size-controlled InP Porous Structures Formed by
the in-situ Electrochemical Process |
Hokkaido Univ. 1, RCIQE 2 *Fujino Toshiyuki 1,2,
Sato Taketomo 1,2, Hashizume Tamotsu 1,2 |
| |
6 |
EDX Analysis of Al surface in ICP Etching |
Tokyo Tech. 1, Samco 2 Akihiro Matsutani 1, Hideo
Ohtsuki 2, Fumio Koyama 1 |
| |
7 |
InGaAlP dry etching using inductively coupled plasma
in Cl2 gas chemistry. |
Toshiba corp. 1 *Takeyuki Suzuki 1, Takayuki Sakai
1 |
| |
8 |
Study on Plasma Induced Damage in AlGaInP Surfaces
Dry-Etched in SiCl4/Ar Inductively Coupled Plasmas |
Hitachi,Ltd.,CRL *Taniguchi Takafumi 1, Kikawa
Takeshi 1,Shinoda Kazunori 1 |
| |
|
Lunch 13:00〜14:00 |
|
| 29p-RD- / III |
| |
1 |
Control of leakage current in AlGaN Schottky gates
by a surface modification |
Research Center for Integrated Quantum Electronics
(RCIQE) Kotani Junji 1, Hashizume Tamotsu 1, |
| |
2 |
Hard x-ray photoelectron spectroscopy for depth
profiling of bandbending on GaN surface |
Corporate R&D Center,Toshiba Corp. 1 *Yoshiki Masahiko
1, Saito Shinji 1, Nunoue Shinya 1 |
| △ |
3 |
Effects of Plasma Treatments on the Surface Properties
of AlGaN |
Hokkaido Univ. 1, RCIQE 2 *Tajima Masafumi 1,2,
Kotani Junji 1,2, Hashizume Tamotsu 1,2 |
| |
4 |
Annealing behavior of the implantation damage in
ion implanted (1-100) and (11-20) GaN |
Hosei Univ. 1, Chemitronics 2 *Suzuki Akira 1,
Kajiwara Hiroaki 1, Kasai Takeshi 2, Satoh Masataka 1,Nakamura tohru 1 |
| |
5 |
Oxidation of GaN surface using supercritical water |
Osaka Univ. 1,ORGANO 2 *Kentaro Chikamatsu 1,Hidemitsu
Aoki 1,Kazuo Okada 2,Taro Oe 2,Shinji Ito 2, Takashi Futatsuki 2,Chiharu
Kimura 1,Takashi Sugino 1
|
| |
6 |
Influence of Thermal Annealing and Surface Treatment
on AlGaN/GaN Interface Properties |
Hokkaido Inst.Tech. 1,Nippon Inst.Tech. 2 *Takahashi
Kensuke 1,Ise Kyousuke 1,Sawada Takayuki 1,Kim Seiyuu 2,Suzuki Tosimasa
2 |
| |
7 |
XPS measurement of surface potential in GaN HFET
structure with Cat-CVD SiN passivation |
NICT 1, Kyoto Univ. 2, Fujitsu Laboratories Ltd.
3 *Onojima Norio 1, Higashiwaki Masataka 1, Suda Jun 2, Kimoto Tsunenobu
2, Mimura Takashi 1,3, Matsui Toshiaki 1 |
| |
|
Break 15:45〜16:00 |
|
| △ |
8 |
Study of AlGaN/GaN HEMT structures on 4-inch Si
substrates |
Nagoya Institute of Technology Yutaka Terada 1,Tuneo
Ito 1,Hiroyasu Ishikawa 1,Takashi Egawa 1 |
| |
9 |
G-V characterization of AlGaN/GaN SBD with Low
Temperature GaN Cap Layer |
NJRC 1,Nagoya Inst. Tech. 2 *Kamada Atsushi1, Deguchi
Tadayoshi1, Waki Eiji 1, Yamashita Meiichi 1, Nakagawa Atsushi 1, Terada
Yutaka 2, EgawaTakashi 2 |
| |
10 |
Low ohmic contact resistance of modulation doped
InAlN/GaN heterostructure |
NTT Photonics Labs. 1, NTT-AT. 2 *Masanobu Hiroki
1, Haruki Yokoyama 1, Noriyuki Watanabe 1, Yasuhiro Oda 1, Takuma Yagi 2,
Narihiko Maeda 1, Kazumi Nishimura 1,
Naoteru Shigekawa 1, and Takashi Kobayashi 1
|
| |
11 |
Low resistance Ohmic contact on Si+
implanted AlGaN/GaN epitxial layers |
Advanced Technology R&D Center Mitsubishi Electric
Corporation Takuma Nanjo 1, Muneyoshi Suita 1, Yuji Abe 1, Toshiyuki Oishi
1, Yasunori Tokuda 1 |
| △ |
12 |
High-efficiency AlGaN UV Photodetectors on AlN
templates |
Nagoya Institute of Technology 1 *Tokura Fumiyuki
1,Jiang Hao 1,Egawa Takashi 1,Ishikawa Hiroyasu 1 |
| |
13 |
Response characteristics of GaN Diode to UV |
Hokkaido Univ.1 , RCIQE 2 *Mizue Chihoko 1 2, Kato
Hiroki 1 2, Kotani Jyunji 1 2, Miczek Marcin 1 2 ,Hashizume Tamotsu 1 2
|
| 12.4
Ultrafast/Functional Electron Devices |
| August 31 (Thu.) 9:30〜18:30 |
| 31a-ZB- / III |
| △ |
1 |
Correlation between the Leakage Current and the
Thickness of GaN Layer |
Ritsumeikan Univ.1, R&D Association for Future
Electron Devices2 Hinoki Akihiro 1, Kamiya Shinichi2, Kosaka Kenichi1, Tsuchiya
Tadayoshi2, Yamada Tomoyuki2, Kikawa Junjiroh2, Araki Tsutomu1, Suzuki Akira1,2,
Nanishi Yasushi1
|
| |
2 |
KFM measurement of potential distribution of GaN
layer on semi-insulating SiC substrate with electric voltages applied |
R&D Association for Future Electron Devices 1,
Ritsumeikan Univ. 2 *Shinichi Kamiya 1, Masayuki Iwami 1, Tadayoshi Tsuchiya
1, Akihiro Hinoki 2, Junjiroh Kikawa 1, Tomoyuki Yamada 1, Tsutomu Araki
2, Akira Suzuki 1,2, Yasushi Nanishi 2
|
| |
3 |
Electrical Characterization of AlGaN/GaN Films
by Conductive AFM |
R&D Association for Future Electron Devices 1,Ritsumeikan
Univ. 2 *Yamada Tomoyuki 1,Tsuchiya Tadayoshi 1,Iwami Masayuki 1,Kikawa
Junjiroh 1,Araki Tsutomu 2,Suzuki Akira 1,2,Nanishi Yasushi 2 |
| △ |
4 |
Temperature Distribution Analysis of AlGaN/GaN
HFETs Operated around Breakdown Voltage Using Micro-Raman Spectroscopy and
Device Simulation |
Ritsumeikan Univ. 1, R&D Association for Future
Electron Devices 2 *K. Kosaka 1, T. Fujishima 1, K. Inoue 2, A. Hinoki 1,
T. Yamada 2, T. Tsuchiya 2, J. Kikawa 2, S. Kamiya 2, A. Suzuki 1,2, T.
Araki 1, Y. Nanishi 1 |
| △ |
5 |
XPS characterization of SiNx/AlGaN Interfaces |
Graduate School of Information Science and Technology,Hokkaido
Univ. 1,RCIQE,Hokkaido Univ. 2,Semiconductor Device Research Center,Matsushita
Electric Industrial Company 3 *Ogawa Eri 1,2,Kokawa Takuya 1,2,Hashizume
Tamotsu 1,2,Nakazawa Satoshi 3,Ueda Tetsuzo 3,Tanaka Tsuyoshi 3 |
| |
|
Break 10:45〜11:00 |
|
| △ |
6 |
Capacitance DLTS of F-plasma treated n-AlGaN |
Nagoya Univ. 1, VBL Nagoya univ. 2, Inst. for Advanced
Research Nagoya Univ. 3 *Mizuno Hiroaki 1, Kishimoto Shigeru 1,2, Maezawa
Koichi 1, Mizutani Takashi 1,4 |
| |
7 |
Surface passivation film dependence of 1/f noise
characteristic in AlGaN/GaN HEMT |
Hosei Univ. 1,Chemitronics 2 Matsushima Takanori
1,Nomoto Kazuki 1,Kasai Takeshi 2,Satoh Masataka 1,Nakamura Tohru 1 |
| |
8 |
Numerical Analysis of Current Slump in GaN FETs
as Affected by a Buffer Layer (2) |
Shibaura Inst. Technol. *Itagaki Keiichi 1, Kobayashi
Noriyasu 1, Horio Kazushige 1 |
| |
9 |
Fabrication and Characterization of Two-Phase HEMT
CCD Matched Filter |
New Japan Radio Co., Ltd. 1 *Satoru Ono 1,Takahiro
Sugiyama 1,Sakoda Hiroshi 1,Yuuji Kiuchi 1,Eiji Nishimori 1 |
| △ |
10 |
Fabrication and Millimeter-wave Characterization
of Semiconductor Klystron Device Using Two-Dimensional Electron Gas |
Tokyo Tech.1,JST-CREST 2 *Takeuchi Jun 1,Iwahashi
Youhei 1,Asada Masahiro 1,2 |
| |
11 |
Off-state breakdown voltages of metamorphic InGaAs/InP
HBT |
SONY 1, JAIST 2 *Ono Hideki 1, Taniguchi Satoshi
1, Suzuki Toshi-kazu 2 |
| |
|
Lunch 12:30〜13:30 |
|
| 31p-ZB- / III |
| |
1 |
Characterization of transient behavior of AlGaN/GaN
HEMTs |
Graduate School of Engineering and Institute for
Advanced Research, Nagoya Univ. T. Mizutani |
| |
2 |
Non-selfalignment Electron Beam Lithography for
narrow mesaHBT |
Tokyo Tech 1, JST-CREST 2 *Kai Takatsugu 1, Fukuyama
Yoshihito 1, Miyamoto Yasuyuki 1,2 , Furuya Kazuhito 1,2 |
| |
3 |
Proposal of new structure for room temperature
operation of new hot electron transistor |
Tokyo Tech 1,JST-CREST 2, *Suwa Akira 1,Hasegawa
Takasi 1,Hino Takahiro 1,Miyamoto Yasuyuki 1,2,Furuya Kazuhito 1,2 |
| |
4 |
Monte Carlo Analysis for Gate Controlled Hot-Electron
Transistors Taking Experimental Structure into Account |
Tokyo Tech. 1,RCQEE 2,JST-CREST 3 Mitsuhiko Igarashi
1, Tomohiro Yamada 1, Nobuya Machida 1,3, Yasuyuki Miyamoto 1,3 Kazuhito
Furuya 1,2,3 |
| |
5 |
Electrical characterization of GaP1-xNx
grown by MBE |
Hokkaido Univ. 1, UCSD 2 *Kaneko Masamitsu 1, Hashizume
Tamotsu 1, Vladimir A. Odnoblyudov 2, Charles W. Tu 2 |
| |
6 |
GaN/InAlN/GaN Hetero Barrier Varactor Diodes |
Meisei Univ. *Nobuhsia Tanuma 1, Minoru Kubota
1,Munecazu Tacano 1 |
| |
7 |
Leakage current and breakdown voltage of GaN Schottky
barrier diodes on GaN substrates. |
Sumitomo Electric. *Hashimoto Shin 1, Tanabe Tatsuya
1, Kiyama Makoto 1 |
| △ |
8 |
GaN p-i-n vertical conducting diodes on 4H-SiC
substrate |
NTT Basic Research Labs. *Nishikawa Atsushi 1,
Kumakura Kazuhide 1, Makimoto Toshiki 1 |
| |
|
Break 15:45〜16:00 |
|
| |
9 |
Fabrication and characterization of Pnp DHBT with
AlGaN collector of high-breakdown field |
NTT Basic Research Labs. 1 *Kumakura Kazuhide 1,
Atsushi Nishikawa 1, Makimoto Toshiki 1 |
| |
10 |
Characteristics of Pnp AlGaN/InGaN/GaN DHBTs with
low-resistance (<100 ohm/sq) base |
NTT Basic Research Labs. 1 *Kumakura Kazuhide 1,
Makimoto Toshiki 1 |
| |
11 |
The area effect of the source region on Si+-implanted-AlGaN/GaN-HEMT
characteristics. |
Hosei Univ. Nomoto Kazuki, Satoh Masataka, Nakamura
Tohru |
| |
12 |
Analysis of source current distribution of ion
implantation GaN FET |
Hosei Univ. 1,Chemitronics 2 *H.Satoh 1,K.Tsukamoto
1,T.Kasai 2,T.Nakamura 1,M.Satoh 1 |
| |
13 |
Effect of Ion Implantation to AlGaN/GaN HEMT with
Submicron T-Gate Structure (2) |
Hosei Univ 1,Chemitronics 2 *Tajima Taku 1,Nomoto
Kazuki 1,Kasai Takeshi 2,Satoh Masataka 1,Nakamura Tohru 1 |
| △ |
14 |
Drain current DLTS of normally-off AlGaN/GaN HEMTs |
Nagoya Univ.1, Institute for Advanced Research
2, Venture Business Laboratory 3 *Kawano Akihiro 1, Kishimoto Sigeru 1,3,
Maezawa Koichi 1, Mizutani Takashi 1,2 |
| |
15 |
Normally-off mode AlGaN/GaN Junction HFETs. |
Meijo Univ. 1, *Fujii Takahiro 1, Tsuyukuti Norio
1, Iwaya Motoaki 1, Kamiyama Satoshi 1, Amano Hiroshi 1, Akasaki Isamu 1, |
| |
16 |
Enhansment-mode AlGaN/GaN HFET Utilizing Piezo-Electric
Charge in GaN Cap Layer |
Inst. of Technology and Science, The Univ. of Tokushima
1,POWDEC K.K. 2 *Okada Masaya 1,Matsuura Kazuaki 1,Ao Jin-Ping 1,Kawai Hiroji
2,Ohno Yasuo 1 |
| |
17 |
Normally-off operation in AlGaN/GaN/AlGaN HEMT
structure |
AIST 1, Taiyo Nippon Sanso 2 Shimizu Mitsuaki 1,
Inada Masaki 1, Okumura Hajime 1, Yano Yoshiki 2, Akutsu Nakao 2 |
| △ |
18 |
Normally-off AlGaN/GaN HFET with Low On-resistance |
Nichia Corp. *Ohmaki Yuji 1,Tanimoto Masashi 1,Akamatsu
Shiro 1,Mukai Takashi 1 |
| 12.4 Ultrafast/Functional
Electron Devices |
| September 1 (Fri.) 9:00〜14:45 |
| 1a-ZB- / III |
| |
1 |
Fabrication of high performance AlGaN/GaN junction
photo HFET with p-GaN gate contact |
Meijo Univ.1 *Miura Shuichi 1,Fujii Takahiro 1,Iwaya
Motoaki 1,Kamiyama Satoshi 1,Amano Hiroshi 1,Akasaki Isamu 1 |
| △ |
2 |
Temperature Dependency Measurement of AlGaN/GaN
HFET Threshold Voltage |
Inst. of Technology and The Univ. of Tokushima
1, ISAS/JAXA 2, POWDEC K.K. 3, *Ishio Takayuki 1, Okada Masaya 1, Jin-Ping
Ao 1, Hirose Kazuyuki 2, Kawai Hiroji 3, Ohno Yasuo 1, |
| △ |
3 |
Gate Stress Bias Dependency of AlGaN/GaN HFET Threshold
Voltage Variation |
Inst. of Technology and Sience, The Univ. Tokushima
1,POWDEC K.K. 2 *Yamaoka Yuya 1,Okada Masaya 1,Ao Jin-Ping 1,Kawai Hiroji
2,Ohno Yasuo 1 |
| |
4 |
Dependence of maximum drain current and transconductance
on device structure in AlGaN/GaN HEMT |
AIST 1, TAIYO NIPPON SANSO 2 Inada Masaki 1,Shimizu
Mitsuaki 1,Yagi Shuichi 1,Piao Guanxi 1,Nakajima Akira 1,Ide Toshihide 1,Okumura
Hajime 1,Arai Kazuo 1,Yano Yoshiki 2,Akutsu Nakao 2 |
| |
5 |
Novel Field Plate structure of AlGaN/GaN HEMTs |
AIST *Nakajima Akira, Shimizu Mitsuaki, Okumura
Hajime, Arai Kazuo |
| |
6 |
Relation between Current-Collapse and Drain Leakage
Current in High Voltage GaN-HEMTs |
Toshiba Corp. Semiconductor Co.1, Toshiba Corp.
R&D Center2 *Wataru Saito1, Masahiko Kuraguchi2, Yoshiharu Takada2, Kunio
Tsuda2, Takao Noda1, Yasunobu Saito1, Ichiro Omura1, Masakazu Yamaguchi1 |
| |
|
Break 10:30〜10:45 |
|
| |
7 |
|
|
| |
8 |
Enhancement-mode AlN/GaN HFETs using Cat-CVD SiN |
NICT 1, Fujitsu Lab. 2 *Higashiwaki Masataka 1,
Mimura Takashi 1,2, Matsui Toshiaki 1 |
| |
9 |
Comparison between Cat-CVD and PECVD SiN passivation
effects for 2DEG density in GaN HFET |
NICT 1, Fujitsu Laboratories Ltd. 2 *Onojima Norio
1, Higashiwaki Masataka 1, Mimura Takashi 1,2, Matsui Toshiaki 1 |
| △ |
10 |
Electrical characterization of GaN MIS structures
at high temperatures |
RCIQE 1 *Hiroki Kato 1,Marcin Miczek 1,Tamotsu
Hashizume 1 |
| |
11 |
High Breakdown Voltage AlGaN/GaN MIS-HEMT Using
Multilayered Insulater Structure |
AIST 1, TAIYO NIPPON SANSO Corporation 2 *Shuichi
Yagi1, Mitsuaki Shimizu1, Masaki Inada1, Hajime Okumura1, Hiromichi Ohashi1,
Yoshiki Yano2, Nakao Akutsu2
|
| |
12 |
Characterization of current collapse and reliability
of AlGaN/GaN MIS-HEMT |
Fujitsu Ltd. 1, Fujitsu Lab. Ltd. 2 *Kanamura Masahito
1,2, Ohki Toshihiro 1,2, Makiyama Kozo 1,2,
Okamoto Naoya 1,2, Imanishi Kenji 1,2, Kikkawa Toshihide 1,2, Hara Naoki
2
Joshin Kazukiyo 2 |
| |
|
Lunch 12:30〜13:30 |
|
| 1p-ZB- / III |
| |
1 |
Insulation property of AlN in Metal/AlN/SiC MIS
structures |
Kohgakuin Univ. 1 *Yuu Wakamiya 1,Hiromi Icikawa
1,Fumio Hasegawa 1,Hideo Kawanishi 1 |
| |
2 |
High quality InAlN/GaN HEMT on Si substrate grown
by MOCVD |
NTT Photonics Lab. 1, NTT-AT 2 *Oda Yasuhiro 1,
Watanabe Noriyuki 1, Hiroki Masanobu 1, Yokoyama Haruki 1, Yagi Takuma 2,
Kobayashi Takashi 1 |
| |
3 |
Insulators Deposition (Si3N4
and Al2O3) Effects on Electrical Properties in InAlN/GaN
Heterostructures |
NTT Photonics Labs. 1, NTT-AT 2, NTT Basic Research
Labs. 3 *Maeda Narihiko 1, Hiroki Masanobu 1, Watanabe Noriyuki 1, Oda Yasuhiro
1, Yokoyama Haruki 1, Yagi Takuma 2, Makimoto Toshiki 3, Enoki Takatomo
1, Kobayashi Takashi 1 |
| |
4 |
InAlN/GaN MIS-HEMTs Using SiN/SiO2/SiN
Triple-Layer Insulators |
Fujitsu Laboratories Ltd. 1, National Inst. of
Info. & Comm. Tech. 2, Osaka Univ. 3 *Endoh Akira 1, Yamashita Yoshimi 1,
Hirose Nobumitsu 2, Hikosaka Kohki 1, Matsui Toshiaki 2, Hiyamizu Satoshi
3, Mimura Takashi 1 |
| |
5 |
Device characteristics of short-gate InAlN/GaN
HFETs |
NICT 1, Fujitsu Lab. 2 *Higashiwaki Masataka 1,
Mimura Takashi 1,2, Toshiaki Matsui 1 |
| 12.5 Optoelectric
Properties and Devices |
| August 29 (Tue.) 9:00〜17:30 |
| 29a-H- / III |
| |
1 |
Luminescence Properties of Blue Phosphor,(Sr,Ba)Si2O2N2:Eu2+ |
Tokyo Univ. of Tech. *Miyamoto Yoshinobu 1,Aihara
Hayato 1,Yamamoto Hajime 1 |
| |
2 |
Luminescence of CaAlSiN3:Yb |
Tokyo Univ. of Tech. 1 *Takuya Nakajima 1,Yoshinobu
Miyamoto 1,Yoh Mita 1,Hajime Yamamoto 1 |
| |
3 |
Improvement of luminescence property of ZnAl2O4:Mn
phosphor by rare earth co-doping |
Research Institute of Electronics, Shizuoka University1,
Aichi University of Technology2 *Yasuki Kato1,Hiroko Kominami1,Kazuhiko
Hara1,Yoichiro Nakanishi1,Yoshinori Hatanaka2 |
| |
4 |
Luminescence properties of YAl3(BO3)4
substituted with Sc3+ ions |
Kwansei Gakuin Univ. 1, NEC Lighting 2 *Yoshida
Hisashi 1,2, Kai Hidenari 1, Teramoto Ryusuke 1, Watanabe Shinta 1, Ogasawara
Kazuyoshi 1 |
| |
5 |
Irradiation effect of 14-MeV neutron for strontium-aluminate-based
long lasting phosphor |
IMR Tohoku Univ. 1, JAEA 2 *toh Kentaro Toh 1,
Shikama Tatsuo 1, Nagata Shinji 1, Tsuchiya Bun 1, Yamauchi Michinori 2,
Nishitani Takeo 2
|
| |
|
Break 10:15〜10:30 |
|
| |
6 |
Local structural characterization of MLn4Si3O13:Tb3+(M=Ca,
Sr Ln=La, Gd) Green PDP Phosphors |
Tottori Univ. 1, Tokushima Bunri Univ. 2, JASRI
3 Yamane Akira 1, Kunimoto Takashi 2, Honma Tetsuo 3, Orita Shinya 1, Nakashima
Yasuhiro 1, Ohmi Koutoku 1, Kobayashi Hiroshi 2 |
| |
7 |
Photo luminescent properties after annealing Ga2O3
and Ga2O3:Cr Phosphor Thin Films |
Chitose Institute of Science and Technology *Honda
Masaya 1,Tooyama Kaoru 1,Kawabe Yutaka 1,Yamanaka Akio 1,Hamanaka Koichi
1 |
| |
8 |
Ga2O3:Eu Phosphor Thin Films |
Chitose Institute of Science and Technology 1 *Tooyama
Kaoru 1,Honda masaya 1,Kawabe Yutaka 1,Yamanaka Akio 1,Hamanaka koichi 1, |
| △ |
9 |
Reduction sintering of Sr7Al12O25:Eu |
Nagaoka Univ. Tech.1,Chubu Chelest Co.,Ltd. 2 *Ooki
Tomoharu 1,Tahara Shunsuke 1,Nakamura Atsushi 2,Namiki Kei-ichi,Ohshio Shigeo
1,Nishino Junichi 1,Nambu Nobuyoshi 1,2,Saitoh Hidetoshi |
| |
10 |
SEM observation of cross-section of Sr-Al-O:Eu
phosphor |
Nagaoka Univ. Tech. 1,Chubu Chelest Co.,Ltd. 2 Tahara
Shunsuke 1,Ooki Tomoharu 1,Nakamura Atsushi 2,Ohshio Shigeo 1,Nishino Junichi
1,Nambu Nobuyoshi 2,1,Saitoh Hidetoshi 1 |
| |
11 |
Red LED Phsphor Ba2R3Li3Mo8O32:Eu
(R = Rare Earths) |
Niigata Univ. *Toda Kenji, Seki Satomi, Ito Yutaka,
Uematsu Kazuyoshi, Sato Mineo |
| |
|
Lunch 12:00〜13:00 |
|
| 29p-H- / III |
| |
1 |
Luminescence in nano-structure silicon |
Shonan Inst. of Technology *Matsumoto Nobuo 1 |
| |
2 |
Effects of Phosphor-Application Geometry on White
Light-Emitting Diode Lamps |
Univ. California, Santa Barbara 1, ERATO/NICP JST
2 Hisashi Masui1,2, Shuji Nakamura1,2, and Steven P. DenBaars1,2 |
| |
3 |
Improvement in Luminescent Characteristics of Blue
Emitting Ba2SiS4:Ce Phosphors by Second Firing with
Additional Si and Li Codoping |
Tottori Univ. 1,Tokushima Bunri Univ. 2 *Ohashi
Tsuyoshi 1,Miyazaki Yasumori 1,Ohmi Koutoku 1,Kobayashi Hiroshi 2 |
| |
4 |
Local structural characterization of red-emitting
Ba2ZnS3:Mn phosphor thin film |
Tottori Univ. 1, JASRI 2, Mitsui Mining and Smelting
Co. Ltd. 3, Tokushima Bunri Univ. 4 *Ohashi Takayuki 1, Ohmi Koutoku 1,
Honma Tetsuo 2, Ito Junichi 3, Yano Tomoyasu 3, Sasakura Asuka 3, Kobayashi
Hiroshi 4, |
| |
5 |
Electronic States of Lanthanide in the Ternary
Thiogallate CaGa2S4 [2] |
Tokyo Univ. Science 1, Nihon Univ. 2, Seikei Univ.
3 *Nomura Shigetaka 1, Takizawa Takeo 2, Kai Munenori 3 |
| |
6 |
Photoluminescence spectra of SrGa2S4
doped with Mn and Ce |
Nihon Univ. 1 *Miura Kazutaka 1,Hidaka Chiharu
1,Takizawa Takeo 1 |
| |
7 |
Photoluminescence of CaGa2S4
compounds doubly doped with Eu and Nd |
Nihon Univ. 1 *Hidaka Chiharu 1, Takizawa Takeo
1 |
| |
|
Break 15:00〜15:15 |
|
| |
8 |
Construction of the pseudo-binary phase diagram
of MgS-Ga2S3 toward the single crystal growth of MgGa2S4
by the melting method |
Nihon Univ. 1 *Shinya Oikawa, Chiharu Hidaka, Takeo
Takizawa |
| |
9 |
Nanosecond Spectroscopy of Ce-doped CaGa2S4
Crystal II |
Nagaoka Univ. Tech. 1,Nihon Univ. 2 *Takayama Katsuhiko
1,Tanaka Kunihiko 1,Uchiki Hisao 1,Hidaka Chiharu 2,Takizawa Takeo 2 |
| |
10 |
Analysis of X-ray photoelectron spectra using the
fully relativistic first-principles method |
Kwansei Gakuin Univ. 1, NEC Lighting 2 *Yoshida
Hisashi 1,2, Morimoto Tsuyoshi 1, Ogasawara Kazuyoshi 1 |
| |
11 |
Synthesis of Cu-In-S fluorescent nanocrystals and
their optical properties |
AIST1, Kyushu Univ.2 ○Masato Uehara1, Kousuke Watanabe2,
Hiroyuki Nakamura1, Hideaki Maeda1,2 |
| |
12 |
Luminescent properties of SrGa2S4:Eu
thin film phosphors by RF magnetron sputtering |
The Japan Steel Works, Ltd. 1, Res. Inst. of Electron,
Shizuoka Univ. 2 *Arai Yuko 1, Seino Toshiaki 1, Ebisawa Takashi 1, Kaneda
Yasumasa 1, Kominami Hiroko 2, Hara Kazuhiko 2, Nakanishi Yoichiro 2 |
| |
13 |
Lower temperature processing and improvement of
luminescent properties of SrGa2S4:Eu thin film phosphors |
Shizuoka Univ. 1, JSW 2, Aichi Univ. of Technol.
3 *Harakawa Takashi 1, Seino Toshiaki 2, Kominami Hiroko 1, Hara Kazuhiko
1, Nakanishi Youichiro 1, Hatanaka Yoshiki 3 |
| |
14 |
Lminescent properties of Eu doped alkaline-earth
chloride phosphors for lighting source applications using near UV excitation |
Res.Inst. Electron., Shizuoka Univ. 1, Aichi Univ.
of Technol. 2 *Kouketsu Naoyuki 1, Hiroko Kominami 1, Hara Kazuhiko 1, Nakanishi
Yoichiro 1, Hatanaka Yoshinori 2 |
| |
15 |
The syntheises of the Eu ion doped CaF2,
SrF2 nanoparticles by Spray Pyrolysis and their fabrications
of nano-composites with polymers |
Univ. of Electro-Communications 1 * Byung-Chul
Hong 1, Katsuyasu Kawano 1
|
| |
16 |
The effects of the activator concentration and
the crystallinity of a ZnS phosphor on the luminescence degradation under
the electron bombardment |
Toshiba Corp. *Nobuyuki Yokosawa 1, Masaaki Inamura
1, Yuuki Ono 1, Yoshitaka Funayama 1, Kenichi Yamaguchi 1 |
| 12.5 Optoelectric
Properties and Devices |
| August 30 (Wed.) 9:00〜12:00 |
| 30a-H- / III |
| |
1 |
Transmission electron microscope observation of
rare earth doped GaN |
Tsukuba Univ. 1.Inst. Appl. Phys.
*Seo Jongwon, Sawahata Junji, Akitomo Katsuhiro |
| |
2 |
Effects of V/III ratio on the photoluminescence
spectra of Eu-doped GaN |
Univ. of Tsukuba 1 *Sawahata Junji 1, Seo Jongwon
1, Chen Shaoqiang 1, Saito Daisuke 1, Akimoto Katsuhiro 1 |
| |
3 |
Improvement of photoluminescence properties of
Eu-doped GaN films by RF magnetron sputtering |
Ehime Univ. 1 Shinji Yudate 1, Naoju Takano 1,
Akira Miyata 1, Sho Shirakata 1 |
| |
4 |
Band-edge emission of Er,O-codoped GaAs grown by
organometallic vapor phase epitaxy |
Osaka Univ. *Hidaka Keiji 1, Hiramatsu Takashi
1, Fujii Kei 1, Terai Yoshikazu 1, Fujiwara Yasufumi 1 |
| |
5 |
Evaluation on Defects of Er implanted Al0.70Ga0.30As
by Using Raman Spectroscopy |
Meiji Univ. 1, Tsukuba Univ. 2, *Arai Tomoyuki
1, Uedono Akira 2, Uekusa Shin-ichiro 1, |
| |
|
Break 10:15〜10:30 |
|
| |
6 |
Temperature dependence of Er excitation cross section
in injection-type Er,O-codoped GaAs light-emitting diodes |
Osaka Univ. 1, CASI-VBL, Osaka Univ. 2, Nagoya
Univ. 3 Tokuno Takehiro 1, Kawamura Shingo 1, Ichida Hideki 2, Terai Yoshikazu
1, Koizumi Atsushi 3, Takeda Yoshikazu 3, Kanematsu Yasuo 2, Fujiwara Yasufumi
1 |
| |
7 |
Enhancement of upconversion luminescence from Er
doped film by Au thin film |
Graduate School of Sci. and Tech. 1,Faculty of
Eng. Kobe Univ. 2 *Yoshiko Usui 1,Toshihiro Nakamura 1,Takeho Aisaka 1,Minoru
Fujii 2,Shinji Hayashi 1,2 |
| ▲ |
8 |
Synthesis and luminescence of red nitride phosphor
Sr2Si5N8:Eu2+ |
Natl.Inst.Mater.Sci. Rong-Jun Xie 1, Naoto Hirosaki
1
|
| |
9 |
Luminescence Properties of Calcium Doped JEM Blue
Phosphor |
Sharp 1, NIMS 2 *Takahashi Kohsei 1, Hirosaki Naoto
2, Xie Rong-Jun 2, Harada Masamichi 1, Yoshimura Ken-ichi 1, Yoshitaka Tomomura
1 |
| △ |
10 |
High color-rendering index white light-emitting
diode lamps using blue light-emitting diode dice |
Fujikura Ltd. 1, NIMS 2 *Kimura Naoki 1, Hirosaki
Naoto 2, Sakuma Ken 1, Xie Rong-Jun 2, Hirafune Shuninchiro 1 |
| |
11 |
Effect of Zr4+ addition on Gd2SiO5:Ce3+
scintillator for PET |
Tokyo Univ of Tech 1, Hitachi Chem 2 Kousei Yokoyama
1,Yasuhumi Nakajima 1,Hajime Yamamoto 1,Yasushi Kurata 2,Tatsuya Usui 2,Naoaki
Shimura 2,Hiroyuki Ishibashi 2 |
| 12.5 Optoelectric
Properties and Devices |
| August 31 (Thu.) 9:00〜16:00 |
| 31a-H- / III |
| |
1 |
Examination about the phase difference of the output
wave at the time of a sine wave input distributed inorganic EL |
Tokyo Polytechnic Univ., Center for Hyper Media
Research Tabata Yasuyuki, Tsuruya Keisuke , *Satoh Toshifumi |
| |
2 |
TFEL Devices Employing Spin-Coated (Ba,Sr)TiO3
Films as 1st and 2nd Insulating Layers |
Tottori Univ. 1,Tokushima Bunri Univ. 2 *Yamasaki
Michihiro 1,Ouchi Yukari 1,Miyazaki Yasumori 1,Ohashi Takayuki 1, Ohmi Koutoku
1, Kobayashi Hiroshi 2 |
| |
3 |
Blue Emitting Ba2SiS4:Ce
Thin Film Electroluminescent Devices Prepared by Electron-Beam Evaporation
(III) |
Tottori Univ. 1,Tokushima Bunri Univ. 2 *Miyazaki
Yasumori 1, Ohashi Tsuyoshi 1, Ohmi Koutoku 1, Kobayashi Hiroshi 2 |
| |
4 |
Ultraviolet Emitting Thin-film Electroluminescence
Device Utilizing AlN as Host Material |
Graduate School of Eng. Sci., Osaka Univ. 1 *Ota
Jun 1, Adachi Daisuke 1, Toyama Toshihiko 1, Okamoto Hiroaki 1 |
| |
5 |
Investigation of Emission Layer Structure of nano-structured
ZnS:Mn thin-film EL devices |
Osaka Univ. Graduate School of Engineering Science
1 *Takei Kohei 1,Adachi Daisuke 1,Toyama Toshihiko 1,Okamoto Hiroaki |
| |
|
Break 10:15〜10:30 |
|
| △ |
6 |
Control of luminescence wavelengh of ZnS:Mn Thin-film
electroluminescent devices by Ga addition |
Ritsumeikan Univ.1 *Nisijima Sumio 1.Okubo Yuji
1.Minemoto Takashi 1.Takakura Hideyuki 1.Hamakawa Yoshihiro |
| |
7 |
PL and EL Properties of Ce-doped (Y2O3)-(Al2O3)
Phosphor Thin Films |
Kanazawa I.T. Univ. O.E.D.S. R&D Center *Fukada
Haruki 1, Miyata Toshihiro 1, Minami Tadatsugu 1 |
| |
8 |
Red Emitting CuAlS2:Mn Thin-Films for
Electroluminescent Devices |
Meiji Univ. *Kawasaki Hiroya, Miura Noboru, Matsumoto
Hironaga, Nakano Ryotaro |
| |
9 |
Electroluminescence from ZnS D-A Pair Type Phosphors
Doped with III-V Compounds |
Meiji Univ. 1 *Takeyasu yuji 1,Miura noboru 1,Matsumoto
hironaga 1,Nakano ryoutaro 1 |
| |
10 |
Excitation Mechanism of Luminescence Center of
Nano-structured Thin-film Electroluminescent Devices |
Graduate School of Eng. Sci., Osaka Univ. 1 Daisuke
Adachi 1, Kouhei Takei 1, Toshihiko Toyama 1, Hiroaki Okamoto 1 |
| |
|
Lunch 11:45〜13:00 |
|
| 31p-H- / III |
| |
1 |
Analysis of structure and electrical property of
S5 grain boundary in Si bulk crystal grown by FZ method |
IMR, Tohoku Univ. 1 *Kutsukake kentaro 1, Usami
Noritaka 1, Fujiwara Kozo 1, Nose Yoshitaro 1, Ito Shun 1, Sugawara Takamasa
1, Shishido Toetsu 1, Nakajima Kazuo 1 |
| |
2 |
Development of several kinds of devices using nanocrystalline
silicon particles distributed solution |
Tokyo Denki Univ. 1, Sapporo Medical Univ. 2 *Satoshi
Yanagisawa 1, Keisuke Sato 1, Kenji Hirakuri 1, Tetsuya Higami 2 |
| |
3 |
A Molecular Dynamics Study on Eu Site in Blue Phosphors
BaMgAl10O17:Eu2+ |
Dept. Appl. Chem., Tohoku Univ. 1, JST-PRESTO 2,
NICHe, Tohoku Univ. 3 Hiroaki Onuma 1, Hideyuki Tsuboi 1, Michihisa Koyama
1, Akira Endou 1, Hiromitsu Takaba 1, Momoji Kubo 1,2, Carlos A. Del Carpio
1, Akira Miyamoto 1,3 |
| △ |
4 |
Large-Scale Simulation on Influence of Defects
in Blue Phosphor BaMgAl10O17:Eu2+ on Its
Electronic Structure |
Dept. Appl. Chem., Tohoku Univ. 1, JST-PRESTO 2,
NICHe, Tohoku Univ. 3 Hiroaki Onuma 1, Hideyuki Tsuboi 1, Michihisa Koyama
1, Akira Endou 1, Hiromitsu Takaba 1, Momoji Kubo 1,2, Carlos A. Del Carpio
1, Akira Miyamoto 1,3 |
| |
5 |
Photoluminescent property of sintered porous silica
doped with rare metal ions under VUV excitation |
AIST.1,Kyoto Institute of Technology2 Tomoko Akai
1, Wei Liu 1, Masaki Murakami 1, Isao Miyano 1, Masaru Yamashita 1, Kohei
Kadono 2 |
| |
6 |
Characterization of mechanoluminescent SrAl2O4:Eu2+
thin films prepared by RF magnetron sputtering method |
AIST Hiroshi Yamada, Kazufumi Sakai, Nao Terasaki,
Chao-nan Xu |
| |
7 |
RGB photoluminescence in alkaline-earth tin oxides
with perovskite-related structure |
Kyushu Inst. Tech. Ueda Kazushige, Nakayashiki
Kensuke, Maeda Tsuyoshi, Goto Katsuhiko, Nakachi Yutaka |
| |
8 |
Preparation of epitaxial thin films of stannate
phosphors with perovskite-related structure |
AIST 1, Kyushu Inst. Tech. 2 *Hiroshi Takashima
1, Kensuke Nakayashiki 2, Tsuyoshi Maeda 2, Katsuhiko Goto 2, Yutaka Nakachi
2, Kazushige Ueda 2 |
| |
|
Break 15:00〜15:15 |
|
| |
9 |
Relationship between local structures around Mn
atoms in ZnGa2O4:Mn and optical properties |
Graduate school of Engineering, Nagoya Univ. 1.
VBL, Nagoya Univ. 2 *Oda Yasufumi 1. Tabuchi Masao 2. Takeda Yoshikazu 1 |
| |
10 |
Thermal degradation on blue luminescence from (Sr,Ba)3MgSi2O8:Eu2+
under VUV-light excitation |
Tokyo Kagaku Kenkyusho Co., Ltd. 1, JASRI 2 *Okamoto
Shinji 1, Nanba Yutaka 1, Honma Tetsuo2 |
| |
11 |
Sm3+-sensitizing effect on red luminescence
from highly Eu3+-doped oxide phosphors under near UV-light excitation |
Tokyo Kagaku Kenkyusho Co., Ltd. *Okamoto Shinji
1 |
| 12.5
Optoelectric Properties and Devices |
| August 31 (Thu.) |
| 31a-P11- / III |
| |
|
Poster
Session
31a-P11-1〜36 9:30〜11:30 |
| |
1 |
Temperature dependence of optical anisotropy on
the layer plane in layered TlInS2 |
Osaka Prefecture Univ. 1,Inst. of Phys.,Nat. Acad.
Sci. of Azerbaijan 2 *Nishimoto Yuichiro 1,Murakami Go 1,Wakita Kazuki 1,Shim
Yonggu 1,Mamedov Nazim 2 |
| |
2 |
Analysis of optical constants of layered ternary
compounds TlInS2 using multi-configuration ellipsometry |
Osaka Prefecture Univ. 1, Nat. Acad. Sci. of Azerbaijan
2 *Wataru Okada 1, Yonggu Shim 1, Nazim Mamedov 2 |
| |
3 |
Light induced elipsometry on TlInSe2 |
Osaka Prefecture Univ. 1,Inst. of Phys.,Nat. Acad.
Sci. of Azerbaijan 2 *Ogushi Naoki 1,Morimoto Toru 1,Shim Yonggu 1,Mamedov
Nazim 2 |
| |
4 |
Current-Voltage characteristic on TlInSe2 |
Osaka Prefecture Univ. 1,Inst. of Phys., Nat. Acad.
Sci. of Azerbaijian 2 *Abe Koji 1,Murakami Go 1,Shim Yonggu 1,Ashida Atushi
1,Mammadov Eldar 2,Mamedov Nazim 2 |
| |
5 |
Synthesis and optical band-gap of AlP-like compound
Li3AlP2 |
Hosei Univ. 1,Osaka Kyoiku Univ. 2 *Anzawa Jun
1,Kuriyama Kazuo 1,Kushida Kazumasa 2 |
| |
6 |
Optical and Electrical Properties of In-thiospinel
Compound FeIn2S4 |
Toukai Univ. 1 Ueno Takuji 1,Wakaki Moriaki 1 |
| |
7 |
Temperature dependence of thermoreflectance spectra
in semiconductor CdIn2Te4 |
Gunma Univ.1 Take Yoshinari 1,Ozaki shunji 1,Adachi
Sadao 1 |
| |
8 |
Growth of ZnSnP2 bulk crystal by solution
growth method |
Tokyo Univ. of Science 1, Ehime Univ. 2 *Keigo
Nakatani 1, Kenji.Fukabori 1, Takehiro Minemura 1, Keisuke Miyauchi 1, Mutsumi
Sugiyama 1, Hisayuki Nakanishi 1, Syo Shirakata 2 |
| |
9 |
Synthesis and PL properties of CuInS2
and CuInS2/ZnS core/shell nanocrystals |
Osaka Univ. 1 *Nose Katsuhiro 1, Soma Yuki 1, Omata
Takahisa 1, Otsuka-Yao-Matsuo Shinya 1 |
| |
10 |
Synthesis of porous CuInS2 foam grown
from polyol materials |
Miyakonojo Coll. Tech. 1, Kumamoto Univ. *Akaki
Yoji 1, Momiki Takanori 1, Ide Kazuki 2 |
| △ |
11 |
Solar Cell Applications of Electrodeposited CuGaSe2
Thin-films |
Ritsumeikan Univ. 1 *Yusuke Oda 1, Takashi Minemoto
1, Hideyuki Takakura 1, Yoshihiro Hamakawa 1 |
| |
12 |
Photoluminescence and electroreflectance characterizations
of CIGS solar cells |
Ehime Univ.1, Aoyama Gakuin Univ.2 *Shirakata Sho1,
Miyata Akira1, Tokio Nakada2 |
| |
13 |
Characterization of CIGS solar cells by time-resolved
photoluminescence method |
Ehime Univ.1, Aoyama Gakuin Univ.2 *Shirakata Sho1,
Miyata Akira1, Tokio Nakada2 |
| △ |
14 |
Photoluminescence Analysis of Deep Levels in Proton-Irradiated
Cu(In,Ga)Se2 Films |
SAS/JAXA 1,Soken Univ. 2,ISTA/JAXA 3,AIST 4 *Yoshida
Kazuki 1,2,Tajima Michio 1,Kawakita Shirou 3,Niki Shigeru 4,Sakurai Keiichirou
4,Sone Yoshitsugu 1,2 |
| |
15 |
Characteristics of scattered laser light signals
from Cu(In,Ga)Se2 films |
AIST RCPV 1, HMI SE3 2 Sakurai Keiichiro 1, Neumann
Timo 2, Hesse Raik 2, Kaufmann Christian 2, Abou-ras Daniel 2, Schock Hans-Werner
2, Niki Shigeru 1 |
| |
16 |
Study of relation between Ga concentration and
defect densities of Cu(In,Ga)Se2 thin film using admittance spectroscopy |
Univ. of Tsukuba 1, AIST 2 *Ishida Nobuhiro 1,
Sakurai Takeaki 1, Ishizuka Shogo 2, Matsubara Koji 2, Sakurai Keiichiro
2, Yamada Akimasa 2, Akimoto Katsuhiro 1, Niki Shigeru 2 |
| |
17 |
Preparation of Cu(In,Ga)Se2 thin films
by vapor deposition from ternary compounds(III) |
Wakayama Coll. Tech. 1, Wakayama Ind. Tech. Cen.
2 *Yamaguchi Toshiyuki 1, Hatori Mitsuhiro 1, Niiyama Shigetoshi 2,
Miyake Yasuhito 2 |
| |
18 |
Grain size enlargement of Cu(InGa)Se2
thin films by Hot-Filament Melting process (III) |
Tokyo Institute of Technology 1, Ryukoku University
2, Quantum Nanoelectronics Research Center 3 Tsukagoshi Tsukagoshi 1, Takahiro
Wada 2, Akira Yamada 3, MakotoKonagai 1 |
| |
19 |
Crystallographic growth orientation of Mo and Cu(InGa)Se2
films for thin film solar cells |
NAIST Akimasa Yamada 1, Koji Matsubara 1, Shogo
Ishizuka 1, Keiichiro Sakurai 1, Hitoshi Tampo 1, Hajime Shibata 1, Shigeru
Niki 1 |
| |
20 |
CIGS solar cells using ZnO back contact layers |
Tokyo Univ. of science 1, AIST2 *Yonemura Minoru
1,Matsubara Koji 2, Ishizuka Shogo 2, Sakurai Keiichiro 2, Iwata Kakuya
2, Yamada Akimasa 2, Niki Shigeru 2, Sugiyama Mutsumi 1, Nakanishi Hisayuki
1
|
| |
21 |
CIGS Thin Film Solar Cells Fabricated on In2O3:(Ti,
Mo) Back Contacts |
Aoyama Gakuin Univ. 1, Sumitomo Kinzoku 2 *Kanda
Yosuke 1, Hashimoto Ryouta 1, Ishizaki Hiroki 1, Abe Yoshiyuki 2, Nakayama
Tokuyuki 2, Ohara Go 2, Mine Tomohiro 2, Nakada Tokio 1 |
| |
22 |
Chalcopyrite-Based Tandem Thin Film Solar Cells |
Aoyama Gakuin Univ. 1 Shunsuke Kijima 1, Yasuhito
Kuromiya 1, Yasuyuki Ishii 1, Nobuyuki Kawamura 1, Tokio Nakada 1 |
| |
23 |
Growth and Characterization of AgInSe2
thin film grown by vacuum evaporation method |
Miyazaki Univ. 1, Kyusyu Univ. 2, Osaka Univ. 3 *Nomoto
Keita 1, Matsuo Hitoshi 2, Kinoshita Aya 1, Yoshino Kenji 1, Ikari Tetsuo
1, Kawahara Toshio 3, Kawai Tomoji 3 |
| |
24 |
Growth of AgGaSe2 Crystals by a Hot-Press
Method |
Miyazaki Univ. 1,Kyushu Univ. 2,Ishikawa National
Coll. Tech. 3 *Kinoshita Aya 1,Nomoto Keita 1,Yoshino Kenji 1,Ikari Tetsuo
1,Matsuo Hitoshi 2,Kakimoto koiti 2,Seto Satoru 3 |
| |
25 |
Growth of AgGaSe2 Bulk Crystal by Microwave
Heating Process |
Osaka Pref. College of Technology *Susaki Masami1,
Maeda Atsushi1, kawakami Yuuta1 |
| |
26 |
Cu2ZnSnS4 thin films prepared
on SLG and Mo plate by sol-gel and sulfurization method |
Nagaoka Univ. of Tech. Oonuki Masatoshi 1,Tanaka
Kunihiko 1, Moritake Noriko 1, Uchiki Hisao 1 |
| |
27 |
Chemical Composition Dependence of Properties of
Cu2ZnSnS4 Thin Films Deposited by Sol-Gel and Sulfurization
Method |
Nagaoka Univ. of Technology *K. Tanaka 1, N. Moritake
1, M. Oonuki 1, H. Uchiki 1 |
| |
28 |
Photoluminescence from Cu2ZnSnS4
bulk single crystals and thin films deposited by sol-gel and sulfurization
method |
Nagaoka Univ of Tech *Miyamoto Yusuke 1,Tanaka
Kunihiko 1,Oonuki Masatosi 1,Moritake noriko 1,Uchiki hisao 1 |
| |
29 |
Fabrication of Cu2ZnSnS4
Thin Films Solar Cell by Pulsed Laser Deposition. |
Nagaoka Univ. of Tech. *Moriya Katsuhiko 1, Tanaka
Kunihiko 1, Uchiki Hisao 1 |
| |
30 |
Preparation of Cu2ZnSnS4
Thin Films for Solar Cell-Absorber by Photochemical Deposition. |
Nagaoka Univ. of Tech. *Moriya Katsuhiko 1, Tanaka
Kunihiko 1, Uchiki Hisao 1 |
| |
31 |
Preparation and Characterization of ZnS Thin films
for the Buffer Layer of CIGS Solar Cells prepared by CBD technique |
Tokyo Univ. of Science Taisuke IWASHITA and Shizutoshi
ANDO |
| ▲ |
32 |
Preparation of Zn1-XMgXO
thin films with wurtzite structure grown by MOCVD and their application
to solar cells |
Quantum Nanoelectronics Research Center, Tokyo
Tech 1, Department of Physical Electronics, Tokyo Tech 2 *Fanying Meng
1, Yoshiyuki Chiba 2, Akira Yamada 1, Makoto Konagai 2 |
| |
33 |
Electrochemically Constructed n-ZnO/p-Cu2O Photovoltaic
Device |
Osaka Mun. Tech. Res. Inst. Masanobu Izaki 1 |
| |
34 |
Base Layer Carrier Concentration Dependence of
Radiation Resistance in AlInGaP Single-junction Solar Cells |
JAXA 1, JAEA 2 *Morioka Chiharu 1, Shimazaki Kazunori
1,Kawakita Shirou 1, Imaizumi Mitsuru 1, Ohshima Takeshi 2, Itoh Hisayoshi
2, Kibe Koichi 1
（* = 発表者記号 姓（半角スペース） |
| △ |
35 |
Carrier Mobility Estimation of TiO2 Electrode
for Dye-sensitized Solar Cells Using Accelerated Quantum Chemical Molecular
Dynamics |
Dept. Appl. Chem.,Tohoku Univ. 1,JST-PRESTO 2,Niche,Tohoku
Univ.3 *Ogiya Kei 1,Lv Chen 1,Hayashi Yukie 1,Tsuboi Hideyuki 1,Koyama Michihisa
1, Endou Akira1,Takaba Hiromitsu 1,Kubo Momoji 1,2,Del Carpio A. Carlos
1,Miyamoto Akira 1,3 |
| ▲△ |
36 |
Theoretical Study on the Photophyscial Properties
of an Efficient Panchromatic Sensitizer for Nanocrystalline TiO2-Based
Solar Cells |
Dept. Appl. Chem., Tohoku Univ. 1, JST-PRESTO 2,
NICHe, Tohoku Univ. 3 Govindasamy Agalya 1, Lv Chen 1, Tsuboi Hideyuki 1,
Koyama Michihisa 1, Endou Akira 1, Takaba Hiromitsu 1, Kubo Momoji 1,2,
Del Carpio Carlos A. 1, Miyamoto Akira 1,3 |
| 12.5
Optoelectric Properties and Devices |
| September 1 (Fri.) |
| 1a-P15- / III |
| |
|
Poster Session
1a-P15-1〜44 9:30〜11:30 |
| |
1 |
Photodetective Characteristics of Metal-Oxide-Semiconductor
Tunneling Structure with Aluminum Grid Gate |
Osaka Univ. 1 *Hashimoto Hideaki 1, Yamada Ryuta
1, Arima Kenta 1, Uchikoshi Junichi 1, Morita Mizuho 1 |
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2 |
Formation of high-quality silicon spheres by seeding
with silicon powder in dropping method |
AIST 1, Japan Gore-Tex Inc. 2, Fuji machine Mfg.
Co., Ltd. 3 Zhengxin Liu 1, Atsushi Masuda 1, Takehiko Nagai 1, Takashi
Miyazaki 2, Miwako Takano 2, Masahiro Takano 2, Haruyuki Yoshigahara 2,
Kazutoshi Sakai 3, Koichi Asai 3, Michio Kondo 1 |
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3 |
Improvements of assemble method of spherical silicon
Photo Voltaic cells with a net structure. |
Japan Gore-Tex INC. 1,Fuji Machine MFG.Co. 2,AIST
3 Miyazaki Takashi 1,Takano Miwako 1,Takano Masahiro 1,Yoshigahara Haruyuki
1,
Sakai Kazutoshi 2,Liu Zhengxin 3,Masuda Atsushi 3,Kondo Michio 3 |
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4 |
Effect of Texture Feature Size on the Performance
of Spherical Silicon Solar Cells |
Ritsumeikan Univ. 1 *Shota Hayashi 1, Takashi Minemoto
1, Hideyuki Takakura 1, Yoshihiro Hamakawa 1 |
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5 |
Study of generation of sub grain boundary in bulk
multicrystalline Si |
IMR, Tohoku Univ. *Kutsukake kentaro 1, Usami Noritaka
1, Fujiwara Kozo 1, Nose Yoshitaro 1, Nakajima Kazuo 1 |
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6 |
Structural modification in multicrystalline Si
ingot during casting growth |
IMR, Tohoku Univ. 1 *Usami Noritaka 1, Kutsukake
kentaro 1, Fujiwara Kozo 1, Pan Wugen 1, Nose Yoshitaro 1, Nakajima Kazuo
1 |
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7 |
Evaluation of polycrystalline silicon for solar-cells
by small pn-diode array |
Meiji Univ. 1,Toyota Tech. Inst. 2, ISAS/JAXA 3
Tanaka Satoshi 1, imai Keita 1, Ogura Atsushi 1, Oshita Yoshio 2, Arafune
Koji 2, Kawai Hideaki 2, Kusuoka Futoshi 2, Tajima Michio 3, Inoue Masaaki
3 |
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8 |
Analysis of Defect Region in Multicrystalline Silicon
Wafers for Solar Cells by Low-Temperature PL Mapping |
ISAS/JAXA 1,Meiji Univ. 2,Tokyo Univ. 3,Toyota
Tech Inst. 4 *Inoue Masaaki 1,2,Sugimoto Hiroki 1,3,Tajima Michio 1,Ohshita
Yoshio 4,Ogura Atsushi 2 |
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9 |
PL Mapping Tomography of Intra-grain Defects in
Multicrystalline Silicon Wafers |
ISAS/JAXA 1, Tokyo Univ. 2, Dai-ichi Dentsu Co.
3, Tokyo Univ. of Agri. & Tech. 4 *Araki Kiyoto 1,2, Sugimoto Hiroki 1,2,
Tajima Michio 1, Eguchi Takeshi 3, Yamaga Isao 3, Marwan Dhamrin 4, Saito
Tadashi 4 |
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10 |
Relationship between proton energy and performance
recovery of a 3J solar cell by current injection |
UEC 1. JAEA 2. JAXA 3 *Miyamoto Haruki 1,2. Ohshima
Takeshi 2. Sato Shin-ichiro 2. Imaizumi Mitsuru 3. Itoh Hisayoshi 2. Kawano
Katsuyasu 1 |
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11 |
Effect of Impurities Electrical Properties on Minority
Carrier Lifetime of p-type Silicon Wafers |
Tokyo University of Agriculture and Technology
1 *Dhamrin Marwan 1, Suda Masanori 1, Tadashi Saitoh 1, Kamisako Koichi
1 |
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12 |
Photoluminescence Characterization of Phosphorous
Gettering and Hydrogen Passivation in Multicrystalline Silicon |
ISAS/JAXA 1, Tokyo univ. 2, Tokyo Univ. of Agri.
& Tech. 3 *Sugimoto Hiroki 1,2, Tajima Michio 1, Dhamrin Marwan 3, Kamisako
Kouichi 3, Saitoh Tadashi 3 |
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13 |
Characterization of Multicrystalline Silicon Wafers
and Solar Cells by Photoluminescence Imaging
|
ISAS/JAXA 1, Tokyo Univ. 2 *Sugimoto Hiroki 1,2,
Tajima Michio 1 |
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14 |
Passivation Effect of a-Si:H/SiNx:H Double Layers
for Crystalline Silicon Solar Cells |
Tokyo Univ. of Agriculture and Technology *Arifuku
Naoki 1,Dhamrin Marwan 1,Suda Masanori 1,Saitoh Tadashi 1,Kamisako Koichi
1 |
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15 |
Spectral properties and light trapping effect of
submicron surface textures for crystalline Si solar cells |
Toyota Tech. Inst. 1, Tohoku Univ. 2 *Sai Hitoshi
1, Kanamori Yoshiaki 2, Arafune Koji 1, Ohshita Yoshio 1, Yamaguchi Masafumi
1 |
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16 |
Surface Texturing on Si by Hydrogen Radicals IV. |
Tokyo National College 1, Shonan Institute of Technol.
2, Oslo Univ. 3 T. Ikegami 1,S. Nishimura 2, K. Terashima 2, A . Ulyashin
3, and H. Nagayoshi 1 |
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17 |
Cast Si Solar Cells using a-SiCN:H films as passivation
layers |
Tokyo Tech. 1 2 Amornrat Limmanee 1, Michio Otsubo
1, Tsutomu Sugiura 1, Takehiko Sato 1, Shinsuke Miyajima 1, Akira Yamada
2, Makoto Konagai 1 |
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18 |
Heat treatment effects on surface reflection of
chlorine-trifloride-textured single crystalline silicon |
Seikei Univ. 1 Narita Syouhei 1, Yamazaki Hidemasa
1, Momma Tadashi 1, *Saito Yoji 1 |
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19 |
Si-based thin film growths on tungsten fiber by
using CH3SiH3 |
Kyushu Univ. 1 *Ohtani Ryota 1, Ikoma Yoshifumi
1, Motooka Teruaki 1 |
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20 |
Photonic properties of nanocrystalline porous silicon
treated by high-pressure water vapor annealing |
Tokyo Univ. Agriculture and Technology Gelloz Bernard
1, Koshida Nobuyoshi 1 |
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21 |
Photoluminescence of Oxygen-Passivated Porous Silicon
Analyzed with Wide-Band Quadrature Frequency Resolved Spectroscopy |
Tokyo Polytechnic Univ. 1 *Kaneko Takeshi 1,Kobayashi
Shinnichi 1,Aoki Takeshi 1 |
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22 |
Generation of singlet oxygen mediated by energy
transfer from porous Si in aqueous solution |
The Graduate School of Sci. and Tec. 1, Faculty
of Eng. 2, Kobe Univ. *Hirokazu Fumon 1, Naoki Nishimura 1, Minoru Fujii
2, Shinji Hayashi 1,2 |
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23 |
Fabrication of highly anisotropic porous silicon
layers by using laser light |
Hyogo Univ. of Teacher Educ. 1 *Koyama Hideki 1 |
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24 |
White and Blue-White PL of Porous Silicon after
Successive Thermal Carbonization/Oxidation Treatment |
Japan Fine Ceramics Center 1, Lashkaryov Inst.
of Semiconductor Phys. 2, Univ. of Turku 3 Vasin Andriy V. 1,2, Ishikawa
Yukari 1, Noriyoshi Shibata 1, Salonen J. 3, Leht V-P. 3 |
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25 |
Increase of PL Intensity of Hydrogenated Amorphous
Silicon Nanoball Films using Hydrogen Plasma |
Waseda Univ.1 *Sanada Hiroshi 1,Miyakawa Keisuke
1,Sakamoto Hajime 1,Kato Isamu 1 |
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26 |
Electron spin resonance studies of P doped Si nanocrystals |
The Graduate School of Sci.and Tech. 1, Faculty
of Eng. 2, Kobe Univ. Kazuaki Sumida 1, Kazuyoshi Fujio 1, Minoru Fujii
2, and Shinji Hayashi 1,2 |
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27 |
Visible Electroluminescence from size-controlled
Silicon Quantum Dots |
QNERC & Dept. of Physical Electronics, Tokyo Tech.
1
SORST-JST 2 *Heajeong Cheong 1, Atsushi Tanaka 1,Daihei Hippo 1,2, Kouichi
Usami 1, Yoshishige Tsuchiya 1,2, Hiroshi Mizuta 1,2, and Shunri Oda 1,2 |
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28 |
Electrical conduction properties of Er-Si-O crystalline
films formed by sol-gel method |
Univ. of Electro-Communications 1 *Kawaguchi Takashi
1, Isshiki Hideo 1, Kimura Tadamasa 1 |
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29 |
ErSiO nano-crystalline thin films on SiO2 by MOMBE |
Univ. of Electro-Communications. 1 *Kohei Tateishi
1, Hideo Isshiki 1, Tadamasa Kimura 1 |
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30 |
Photoluminescence of Er in strained Si and SiGe |
Okayama Univ. 1, Toray research center 2 *Ishiyama
Takeshi 1, Yoneyama Shuzo 1, Fukui Yuki 1, Yamashita Yoshifumi1, Kamiura1
Yoichi, Date Tomotsugu 2, Hasegawa 2, Okuno Kazuhiko 2 |
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31 |
Photoreflectance spectroscopy using double monochromator |
Ehime Univ. 1 *Jimpei Tabata 1, Tomoaki Terasako
1, Akira Miyata 1, Sho Shirakata 1 |
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32 |
Development of Multi-Scale Carrier Transport Simulator
for Light Emitting Devices |
Semiconductor Energy Lab. 1, Dept. Appl. Chem.,
Tohoku Univ. 2, JST-PRESTO 3, NICHe, Tohoku Univ. 4
*Suzuki Hideto 1,2 , Matsuura Asako 2, Tsuboi Hideyuki 2, Koyama Michihisa
2, Endou Akira 2, Takaba Hiromitsu 2, Kubo Momoji 2,3 , Del Carpio Carlos
A. 2, Miyamoto Akira 2,4 |
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33 |
Optical properties of β-Ga2O3 single crystals doped
with Si |
Gifu Univ 1,NIMS 2, *Yoshida Masafumi 1, Hasegawa
Takamasa 1, Yamaga Mitsuo 1, Encarnacion Villora 2, Shimamura Kiyoshi 2, |
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34 |
Electroluminescence from an Er-doped n-ZnO/p-Si
Light Emitting Diode (2). |
Tokyo Univ. of Science 1, Toyo Univ. 2 *Harako
Susumu 1,Ide Kazutaka 1, Fukasawa Shinichirou1, Monma Kaori 1,Komuro Shuji
2, Xinwei Zhao 1 |
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35 |
Electroluminescence from an Er-doped n-ZnO/p-Si
Light Emitting Diode (3). |
Tokyo Univ. of Science 1, Toyo Univ. 2 *Ide Kazutaka
1, Harako Susumu 1, Abe Junichi 1, Tsukahara Hajime 1,Komuro Shuji 2, Xinwei
Zhao 1 |
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36 |
Ultrafast nonlinear optical response of weakly
confined excitons in GaAs thin films |
NiCT 1, CREST-JST 2 *Osamu Kojima 1,2, Toshiro
Isu 1,2, Junko Ishi-Hayase1,2, Masahide Sasaki1, Masahiro Tsuchiya1,2 |
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37 |
Relaxation dynamics of photoexcited carriers in
Er-doped GaAs by pump probe transmission measurements |
Osaka Univ. 1 Shouichi Takemoto 1, Keiji Hidaka
1, Yoshikazu Terai 1, Masato Suzuki 1, Masayoshi Tonouchi 1, Yasufumi Fujiwara
1 |
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38 |
Eu3+ sites in GaN:Eu3+ epitaxial
films studied by microscopic photoluminescence spectroscopy |
NAIST 1, Tsukuba Univ. 2, Kyoto Univ. 3 *Ishizumi
Atsushi 1, Sawahata Junji 2, Akimoto Katsuhiro 2, Kanemitsu Yoshihiko 3 |
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39 |
Blue emission from Zn-doped GaN powder synthesized
from metal-EDTA complex |
Mie Univ.1., Chubu Chelest Co.,Ltd.2 *Koide Shinya
1, Nakamura Kazuya 1, Liu Yuhai 1, Miyake Hideto 1, Hiramatsu Kazumasa 1,
Nakamura Atsushi 2, Nambu Nobuyoshi 2 |
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40 |
Thermal analysis of GaN microcrystal synthesis
from Ga-EDTA complex |
Faculty of Eng., Mie Univ. 1, Chubu Chelest 2 *Yu-Huai
Liu 1, Shinya Koide 1, Hideto Miyake 1,Kazumasa Hiramatsu 1, Atsushi Nakamura
2, Nobuyoshi Nambu 2 |
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41 |
Photoluminescence spectrum change for p-GaN cathode
accompanied with H2 generation by H2O photolysis |
Denkitsushin Univ 1, 21st Century COE program 2,
Nippon EMC.,Ltd 3 Daigo Takagi 1,Toru Narumi 1,Junya Tokue 1,Naoki Kobayashi
1 2,Jun Yamamoto 3,Yuzabrou Ban 3,Kiyohide Wakao 3 |
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42 |
Bias dependence of photoluminescence intensity
about n-type InGaN/GaN QWs in electrolyte |
Univ. Electro-communucations 1, 21st Centure COE
program "Innovation in Coherent Optical Sience" 2, Nippon EMC.,Ltd 3 *Takeda
Yousuke 1, Takagi Daigo 1, Kobayashi Naoki 1,2, Sano Tatsuji 1, Jun Yamamoto
3, Ban Yuzaburou 3, Kiyohide Wakao 3 |
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43 |
Photocurrent spectrum responding to visible light
by p-InGaN/electrolyte system |
The Univ. of Electro-Communications 1, 21st Century
COE program 'Innovationin in Coherent Optical Science' 2, Nippon EMC.,Ltd.
3 *Narumi Toru 1, Takagi Daigo 1, Tokue Junya 1, Kobayashi Naoki 1,2, Yamamoto
Jun 3, Ban Yuzaburo 3, Wakao Kiyohide 3 |
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44 |
Photocurrent action spectrum of the TiO2/p-InGaN
hetero junction electrode fabricated by sol-gel process |
Univ. Electro-Communications 1,21st Century COE
Program 2,Nippon EMC.Ltd 3 *Tokue Junya 1,Narumi Toru 1,Takagi Daigo 1,Kobayashi
Naoki 1,2,Yamamoto Jun 3,Ban Yuzaburo 3,Wakao Kiyohide 3 |