OYO BUTURI
Vol.88
No.1
2019
1
20191881

OYO BUTURI Vol.88 No.1 (2019)

Spintronics/Imaging technique/Semiconductor process technique

Cover of OYO BUTURI Vol.88 No.1 (2019)
Cover photo of OYO BUTURI Vol.88 No.1 (2019)

Demonstration of spin-torque antiferromagnetic memory operation. When an electric current is flowing in the Pt wire, spin current is injected into NiO via spin Hall effect. The injected spin exerts a torque on NiO spins and rotates them (information writing). The information (direction of axis of spins in NiO) can be read out as the change in resistance. (p.12)