Electrical conductivity measurement of the quasi-one-dimensional structure on a silicon surface
Shinichiro HATTA1, Tetsuya ARUGA1
We have studied electrical conduction and metal-insulator (MI) transition of one-dimensional (1D) atomic chain structure on In/Si(111) by using a home-built ultrahigh-vacuum-compatible four-point probe. The apparatus used has a unique structure for stabilizing electric contacts between the probes and a semiconductor surface during cooling/heating. We present the temperature dependence of sheet conductivity of the 1D chain structure, which exhibits the asymmetric hysteresis loop of the MI transition. The transition during heating is significantly broader than that during cooling, indicating heterogeneous nucleation for the formation of the metallic phase. We suggest that this is due to the lack of the interchain interaction at the domain boundaries.
- 1 Graduate School of Science, Kyoto University