Crystal growth and electronic properties of germanium-tin group-IV alloy semiconductor thin films
Osamu NAKATSUKA1, Masashi KUROSAWA1
Germanium tin (Ge1-xSnx) is a group-IV semiconductor having some unique properties; a direct transition, a high carrier mobility, and a low crystallization temperature, which promise a number of different applications for high mobility transistors, infrared light emitting or receiving devices, and semiconductor lasers for integration on multi-functional LSI devices. It is essential to develop the crystal growth and process technologies of Ge1-xSnx thin film, as Ge1-xSnx is a eutectic alloy in which the solid solubility of Sn is very low. In this paper, we report the recent progress of the crystal growth technology and a characterization of the heterostructure and electronic properties of Ge1-xSnx and related group-IV alloy semiconductors.
- 1 Department of Materials Physics, Graduate School of Engineering, Nagoya University