OYO BUTURI
Vol.88
No.6
2019
6
20196886394
OYO BUTURI Vol.88 No.6 (2019)
Our Research

Emerging spintronics memories: STT-MRAM, Spin-Hall MRAM, and Voltage Control Spintronic Memory

Hiroaki YODA1, Yuichi OHSAWA1, Yushi KATO1, Naoharu SHIMOMURA1

The realization of non-volatile working memory is a dream in the LSI field. However, non-volatility requires a large amount of energy to write data and no non-volatile memory has been used as working memory. New spintronics writing mechanisms, STT, Spin-Hall, and VoCSM have been studied. It has been concluded that Spin-Hall writing and VoCSM writing have non-volatility, reasonably small energy consumption, and practically unlimited endurance.
Further efforts in physics and engineering may realize the dream in a few years.

  • 1 Corporate Research & Development Center, Toshiba Corporation
OYO BUTURI Vol.88 No.6 p.394 (2019)