OYO BUTURI
Vol.88
No.6
2019
6
20196886389
OYO BUTURI Vol.88 No.6 (2019)
Our Research

MONOS embedded flash memory for future generations

Shibun TSUDA1, Yasuo YAMAGUCHI1, Tomohiro YAMASHITA1

There are various demands on embedded flash (eFlash) memories in microcontroller units such as performance, reliability and power consumption. Split gate metal oxide nitride oxide silicon (SG-MONOS) Flash has a long history of achievements as a high performance and highly reliable eFlash. In this article, as a further performance enhancement, we fabricated SG-MONOS memories having FinFET structures employed in state-of-the-art logic CMOS. FinFET SG-MONOS memories enjoy the benefits of 3D structures as is the case with logic CMOS and have proved to be a potential candidate for the next generation of eFlash.

  • 1 Renesas electronics corporation
OYO BUTURI Vol.88 No.6 p.389 (2019)