Nanoimprint system for high volume semiconductor manufacturing
Nanoimprint lithography (NIL) has been shown to be an effective technique for the replication of nano-scale features. Jet and Flash* Imprint Lithography (J-FIL*) involves the field-by-field deposition and exposure of a low viscosity resist deposited by jetting technology onto the substrate. The patterned mask is lowered into the fluid, which then quickly flows into the relief patterns in the mask by capillary action. Following this filling step, the resist is cross-linked under UV radiation, and then the mask is removed, leaving a patterned resist on the substrate.
The purpose of this paper is to describe the technological advancements made in understanding the criteria required for a semiconductor lithographic process; defectivity, particle number, overlays and throughput. The FPA-1200NZ2C cluster system designed for high volume manufacturing of semiconductor devices is also introduced.
- 1 Semiconductor Production Equipment Group, Canon Inc.