Understanding of the basic properties of HfO2-based ferroelectrics using epitaxial films
Hiroshi FUNAKUBO1, Takanori MIMURA1, Takao SHIMIZU1, Takanori KIGUCHI2
Epitaxially grown HfO2-based ferroelectric films with various orientations were grown. An orthorhombic phase with noncentrosymmetric symmetry was ascertained to be the origin of ferroelectricity for HfO2-based ferroelectricity. Spontaneous polarization and the Curie temperature were evaluated using these epitaxial films. These values are almost compatible with those of conventionally used Pb(Zr0.4Ti0.6)O3 and Sr0.8Bi2.2TaO9 films. These results show that HfO2-based ferroelectric films are a promising candidate not only for conventional applications including ferroelectric memories, but also for novel applications including ferroelectric tunnel junctions.
- 1 Tokyo Institute of Technology, School of Materials and Chemical Technology, Department of Materials Science and Engineering
- 2 Tohoku University, Institute for Materials Research