OYO BUTURI
Vol.87
No.10
2018
10
2018108710754
OYO BUTURI Vol.87 No.10 (2018)
Our Research

Fe-doped ferromagnetic semiconductors and their device applications

Nam Hai PHAM1, Duc Anh LE2, Thanh Tu NGUYEN2, Masaaki TANAKA2

We review recent studies of a new class of Fe-doped III-V ferromagnetic semiconductors (FMS). We first briefly summarize the history of FMS studies, and point out the unsolved problems of the most intensively studied Mn-doped III-V FMSs such as (GaMn)As. We then discuss the possibility and prospects of using Fe as a magnetic impurity in narrow-gap III-V semiconductors to realize a new family of FMSs that can solve all the problems of Mn-doped FMSs. We describe the crystal growth, detailed structural characterizations, and fundamental magnetic properties of n-type (InFe)As, p-type (GaFe)Sb, and n-type (InFe)Sb. We discuss possible applications of these Fe-doped FMSs to semiconductor spin devices.

  • 1 Department of Electrical and Electronic Engineering, Tokyo Insitute of Technology
  • 2 Department of Electrical Engineering and Information Systems,University of Tokyo
OYO BUTURI Vol.87 No.10 p.754 (2018)