Gate control of a spin-orbit interaction in a nanowire transistor
Keiko TAKASE1, Satoshi SASAKI1
We report a high-performance InAs nanowire MOSFET with a gate-all-around (GAA) structure, where we simultaneously control the spin precession using the Rashba interaction. Our FET has a high on-off ratio (104~106) and a high field-effect mobility (1200cm2/Vs). At the same time, the GAA geometry combined with a high- k dielectric enables the creation of a large and uniform coaxial electric field (>107V/m), thus achieving highly controllable Rashba coupling. Our demonstration of high FET performance and spin controllability opens up a new way of realizing low-power consumption nanoscale spin MOSFETs.
- 1 NTT Basic Research Laboratories, NTT Corporation