Quantification of carbon in Si crystals by photoluminescence at liquid-nitrogen and room temperatures
Michio TAJIMA1, Atsushi OGURA2
The quantification of low-levels of carbon in Si has been eagerly sought to fabricate advanced power devices and high efficiency solar cells. Photoluminescence measurement after electron irradiation has been used in practice to quantify the carbon in Si crystals at concentration levels as low as 1012cm-3. Despite the advantage of the high sensitivity, the necessity of cooling the sample to liquid He temperatures has been an obstacle. We show that the C-related lines are observable at liquid nitrogen temperatures by using optimized low-dispersion spectroscopy and demonstrate the great practical advantages of the higher sensitivity and faster measurement. Furthermore, we present that a C-related broad emission band is observable even at room temperature and discuss its applicability for carbon quantification.
- 1 Organization for the Strategic Coordination of Research and Intellectual Properties, Meiji University
- 2 School of Science and Technology, Meiji University