Heteroepitaxy of lattice-matched III‐V‐N/Si and its applications
Akihiro WAKAHARA1, Keisuke YAMANE1
This paper presents key technologies for III‐V/Si heteroepitaxy and its device applications, including the control of a hetero-valent interface, growth of lattice-matched III‐V‐N alloys and doping control of the alloys. Two-dimensional growth of the GaP layer at the initial growth stage on a Si substrate has an important role to suppress the generation of structural defects such as anti-phase domains, stacking faults and melt-back etching. For the successful growth of III‐V‐N alloys, the impact of temperature, nitrogen-composition and the V/III ratio on the crystallinity should be taken into account. The additional understanding of III‐V/Si hetero-epitaxy obtained from our study will be informative for its various applications based on III‐V materials integration with Si.
- 1 Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology