Crystal growth dynamics of compound semiconductors by in situ synchrotron X-ray reciprocal space mapping
Takuo SASAKI1, Masamitu TAKAHASI1
Experimental results and future prospects of in situ synchrotron X-ray reciprocal space mapping (in situ RSM) developed for studying the crystal growth dynamics of compound semiconductors are presented. In situ RSM enables the observation of both the strain and quality of crystals during growth at a high speed comparable to the growth of a single atomic layer. Initial growth dynamics of GaN/SiC and the strain relaxation mechanisms of InGaAs/GaAs are explained on the basis of experimental results of in situ RSM. Moreover, the in-plane anisotropic strain relaxation of InGaAs films was revealed using 3D-RSM. In situ RSM has proved to be a powerful characterization tool for studying not only fundamental crystal growth dynamics but also device structures with multilayers such as solar cells.
- 1 National Institutes for Quantum and Radiological Science and Technology (QST), Quantum Beam Science Research Directorate, Synchrotron Radiation Research Center