OYO BUTURI
Vol.87
No.4
2018
4
20184874262
OYO BUTURI Vol.87 No.4 (2018)
Recent Developments

Ultra-low power integrated circuits using tunnel field-effect transistors

Takahiro MORI1

Tunnel field-effect transistors (TFET) are one of the candidates for replacing conventional MOSFETs to realize an ultra-low power LSI. The most significant issue concerns their low ON current, for which one of the solutions is taking advantage of new channel materials such as Ge or III-V. Si is not favored for the channel because Si is an indirect-gap material having a low band-to-band tunneling probability. However, a new technology to enhance the ON current in Si-TFETs utilizing isoelectronic trap (IET) technology was recently proposed, which opens the door to enhanced ON current in Si-TFETs. This article outlines the ongoing TFET research and briefly discusses the IET technology.

  • 1 Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST)
OYO BUTURI Vol.87 No.4 p.262 (2018)